SCIENTIFIC ABSTRACT SLJIVIC, R. - SLOBODCHIKOV, S.V.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001651330001-1
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 25, 2000
• Sequence Number: 1
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

R dr PETKU11"', dr-;
u, Z A., @ L@@CV. r
r, 4cal., radioioEic and endocri no-me tab,,) c signs in, gastrec
mized patients. I-led. glas. 19 ,o.2/.,,:47-51 F-Mr 165.
1. Interno odeljenje opste bolnice v, Nisu II.Sef: visi pred. Prim.
dr. M. Fetkovic).

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'(@u.- e- erience @.--,-ith ab-Ility evaluation in dj-a@c.,tj-zj.
g'as. !F rio.3:84-8? Mr-.Ap 1@ '.
- a I -)z,

-SLJIVICY-Radmila, dipl. hem.
Processing and use of Courtelle and simi.Ur fibers. Tekatil
ind Beograd 12 no.12:677-678 164.
1. Head, Branko Krsmanovic Laboratory of Woolen Fabrics,
Paracin.

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and ol' scn-@ of cur ?,ai-blell P. 303
(Z11:,-@-7=--K 7-'@`@DOVA, Vol. 33, o- ad, Yu-oslavia)
":ontilly List of E'ast -E'uroL,@.,an It"ccessions T". 'TC1. lo. 5, "'ay S-54 Urcl.

SLJIVIC,- Sreten
Fluorescence of methylquinolines in acid solutions, and their
application as fluorescent indicators. Gl hem dr 23/24 no.5/6:
239-245 1 58159. (EEAI 10:4)
1. Farmae.eutiski fakultet, Institut za fiziku, Beograd.
(Fluorescence) (Quinaldine) (Methylquinoline)
(Absorption spectra)

SIMIC, Miroslav M.; SLJIVIC,, Vojin S.-, PETKOVICO Milica Z.; KRAJINCANIC,
Branka N.
Antibody :formation in x-i"adiated rats protected with A-mercapto-
ethylamine and 8-aminoethylisothiauronium. Bul Inst Nucl 10:
149-161 mr 96o. - (EEAI 10:5)
( x Itai#; I I , -@
n-I I I ,r- @@hiol-) - (Aminoetbylthiopseudourea)
(Arktijs 111CS , * ftlb' "il"V, -'. (Radiobiology)

-SLJIVIC, Vojin S.; SIMIC, Miroslav M.; PETKOVIC, Milica Z.; KRAJINGANIG,
11-r-anka N.
Hemolysin formation in intact, splenectomized and X-irradiated rats.
Bul Inst Nucl 10:163-172 Mr 6o. (EEAI 10:5)
(Hemolysis and hemolysins) (X rays)
(Spleen) (Radiobiology)

SIMIC., Miroslav 1,L; SIJ@@VcCin S.; PETKOVIC, Milica Z.: Technical
assistance: ROSIG, Katja 9.
Some analogues of pyrimidine and their effects on the formation
of circulating bodies. Rul Inst Nucl 11:235-245 161.
1. Institute of Nuclear Sciences "Boris Kidrich". Department
of Radiobiology, Vince. (for Simic and Sljivic). 2. Institute
of Physiology, School of Pharmacy, University of Belgrade
(for Fet@-ovic).

SIMIC Ydroslav M.; SIJIVIC, Vojin S.; Technical assistance: ROSIC,
Y I
Ka tj a M.
Role of time correlation between immmization and irradiation
in the inhibition of the primary hemolysin response in rats.
Bul Imqt Nuel 11:255-274 161.
1. Inotitute of Nucleaz Sciences ."@Orls Kidrich,'" Department
of Radiobiology, Vinca.

SLJIVIC-, Vojin. S.
L, C. Given 1, @x,
C@s,int-.--y: Yugoslavia
not given
A f lf@' 11,. ti oiDepartment of Radiobiology, Institute of Nuclear Sciences
@Iurc,@ Belgrade-Vint6ha, 3ulletin of the Institute of Nuclear Sciences
'Boris Yidrich", Vol 11, Mar 1961, pp 247-254.
1", ta "Contribution to the Investigation of the Effects of X-Irradiation
on Antibody Formation During the Secondary Immune Response.4
Co-authors:
5III-SIC, Miroslav M., Department of Radiobiology, Institute of Nuclear
Scilinces uBoris Kidrich".
PETKOVIC, Milica Z., Institute of Physiology, School of Pharmacy,
University of Belgrade,
ROSIC, Katja M., Technical Assistent.9 Department of Radiobiology,
T-riititute of Nuclear Sciences "Boris Kidrichl.

SIMICS M.; CIRKOVIC, D.; MARINKOVIC, D.; SLJIVIC, V.
Incorporation of Na-formiates-C into bases of desoxyriborrucleinic
acid and ribonucleinic acid of the spleen cells in vitro after
primary antigenic stimulation. Bul sc Youg 7 no.1/2:34
F-Ap 162.
1. Institut "B. Kidric.." Vinca, Beograd.
-W

HDREMY, K.
co-mrkerst SLW N, BRSM I., JAMMOVA M.
Second PedLatric Clinic of the Meacal Faculty at Commium UniverodtV,
(II. deUka klinika Lek. fako 19niv. Nowmakdie), Bratislava, dlrwtws
J. Uichalickova
*atIelaw&, *atiala"ka Lokmr*o I&ftr. We 2963, pp 423-4"
wrm Utiltution of Omaitativuly Ufformt ftVbdw In ImIx ftwitun
Of T*&nw4w

- SLOBIl.." B.Z., -*z)-0-
Strength under nonEtationai-I conditions of variable
stressei. Vest. mashinostr. 44 no.6.19-23 Je 164.
(MIRA 17:8)

1, 1.@,; - 1@ i - @ ,
? . i . , . . . .
I . I -)@e fatigue itr,@!gtlh factor under random stresses.
L - @ : : a 1 ing @... -
II;.1 3 t 4 -1 . (I-9RA -'8:6)
.T , .. vrash-nostr. 45 Mly '65

L 31920-66 _EWT(mYEW@Q) T 1JP(C) RM
ACC NRI AM007971 (A) SOURCS COD&j LqVO191/66/000/00)/C)O'i/,/005,7
AUTHORs Potnkiing, yea'siol Holialfs Y, B. h219tk2!jL R. V, - batalin 00 le.;
,Va.
Btislovich, Ye. Yao; Rubinsteyn, E. I.; Ravktna A, 9,; Mvnukova, 0
Pina, As Va; al To Rol byehKova, We he
OUG none
16@
is
TITLAs Alkenylsuccinic aciA anhyAriAes as har4sut @& '"Its for epoxy resins
SCU,49: r1asticheskiye massy, noe 3, 1%6, 54-57
01
TOM TAGSi epoxy plqstic, Mx4ontnag, soll,; mochanical propirty
ABSTRACTi Tho authori stulie-R the synt-Msts an,4 usm of alkqny-lauccinte acIA-anr-
hy4rtAes Re liqtdA anA low-toxic Mr-lening agnnts for epoxy resins. The anhyAriAss
wivo synthosiz94 In an elactriewIly hnate4 steel autoclave with a mixing 4evice by
the reaction of maloto anhy-4riAso with manoolefin5i
R-A34--CH-Oi + CH-CH R-tH-CH--CH--CH-1CK
0101. 4N
The following anhyArl 4eJ wore prepire-4i (aciRp bollinfl, point in C, at pressure lfk mm)
crotylsucoinlog 122-U7# 81 Ventanylsuccintep 135-109 8; 4aAacanylsucatnial 224410t
Card 1/2
a 676.601421

L 31920-66
ACC NRi AP60(Y7971
5; an-3 a m4furs of isooetanyl- anA toofionanylsuceinto (ASA), 155-169, 8e Epoxy
resins_ER@2r&D-6p aM SDLI@ere harden*M.by AS& at 140C for 24 hr, using 93-115,
73-93- anA 47-57 g of ASA over 100 g oC eyoxy resins reApectIvall, Using Almethyl-
aftiltne or triethanolamine as the so6slersitorev the har4ening prqc9se was accomplish-
9A within 1.5-2 hr at IOOG, With the *zceytton of thermal @tPtbIlItyq which was 25-35C
lowerothe physicOmochanical proymrties of the proAucts obtftIneA resambleA very close-
ly those obtstinnA by the ube of majoia rmhyftift an the WirAening agent* Wge arte
hass 6 tables# 4 fig., anV I fornulas
SUB Coca& ll'OT/ SUBM DATI9# none/ CRI-3 RUs W4/ M RVe 003

RATH, R.; SLOBOCHOVA, Z,; PLACER.Z., Tecdnic@a spolupraces HRADILOVA, L.;
@Mvff- MEROWA-7 im.
Body water sm--s. Rela+lcn of ertra,,@ellulaa- flu-id to basal
metabo'lism in obese patients. Cesk. gast-rot-Pt. i- . 17 no.81.
yr
463-468 W63
1. -Ustav pro v-y-.kum v Prase; reditel prof. dr. J.Masak.
DrSc.

BUIMOVICI,,.Elena; SLOBODA, Eva; DONJk, D.
Comparative sensitivity of 3 cell cultures for the isolation of .I
poliomyelitis viruses. Stud. cercet. inframicrobiol. 13 no.4:
463-472 162. -
(POLIOVIRUS) (VIRUS CULTIVATION) (TISSUE CULTURE)
-

h U-MADi i A
SLOBODA, Eva, MUIMOVICI, Elena and VrEISER, G. of the "Dr I.
C_aEia'&d@-in Institute (Institutul "Dr I. Cantacuzino"), Polio-
myelitis Section (Sectia Poliomielita).
"Epidemic Episodes of Febrile Catarrh of the Upper Respiratory
Tract and Conjunctivitis Associated with Enteroviruses."
Bucharest, Studii si Cercetari de Inframicrobiologie, Vol 14,
No 5, 1963, pp 603-618.
Abstract [Authors' English summa y, modified]: Describes two
loci WiTb 100 @o morbidity in a children's community (1 to 3
year olds). In one of the foci, ECHO virus type 7 was isolated
from the pharynx and feces of 55% of the children. In the second
focus Coxsackie A virus alone or associated with ECHO virus was
isolated from the9pharynx and feces of 61% of the chil2ren tested.
The second epidemic focus was characterized by complete absence of
nervous symptomatology, possibly because of interference between
the two viruses at the level.of the central nervous system. Thus
a possible enteroviral etiology should be considered for non-bacte-
rial epidemic respiratory infections even if associated with con-
junctivitis.
Includes 9 tables and 35 references, of which 5 Rumanian,
3 Russian, 3 German and 24 Western.
1/1

-SLOBODAY Eva; BIJIMOVICI-KIIIN, Elera; DAIN, B.; a,,,ree !a coilabo@ation de:
W,,VICATIDE, E.; GHEORGHFY Mhria; DINCA, Geta
Enterovirus viremia and homologous serological conversion
concomitant with non-enteroviral sypdromes. (Preliminary
note). Arch. Rotun. path. exp. microbiol. 23 no.4:1061-1069
D , fv,.
1. Inst-itut "Dr. I. Cantacuzino", Service des Enterovirus
(for Sloboda, Buimovici-Klein) et Clinique de Maladies Conta-
gfeuses No.1, Bucarest (for Dan). Submitted June 26, 1964.

C'
yuGosjAVjA/GL1Itiv-itea Plants - Fruits - Berries M
Abs Jo-,:lr Ref Zhur Biol., No 18, 1958, 82517
A-Ahor Bacic Slobodan
Inst
Tit-.e Selection of a Place for Aimond Plintin.c.
0-..-i[, Pub Biljoia proizv., 1957, 10, No 1, 47-58
Abstract The depth of the root systen, of almond plant in Yi-.gosla-
via reaches 5 meters with a diameter of up to 10 meters.
Therefore, deep soil with water-permeable s-.bsoil layer
sho-t.-ild be chosen for almond plaa-ting. The Greatest
amoi:zt of roots sp2eads to the depth of _ip to 70 centi-
meters. Calcareous soils contribute to the reduction in
the disease indicence in the trees. On heavy, clayey
soils, rich in nutrients, almond 3rows extremely vigorous-
ly b-:t with a lowered Yield. 300 kilograms of feeding
soil to 1 square meter can be considered s-ifficient for
almoad cLiltivation. Rocky soil does not 'hinder the
Card 1/2
- 134 -
YUGOSrAVIA/c i1.ti.vtjtc(j PI"1313 Fr,.ttu. Berrieg, M
Abs Jo,-!r Ref Zhur Biol., No !8, 1958; 82517
develop'tient Of t*ile aimond prov-JI'ded it cojjt_,i@js and ade-
TAO-te amo,:d-t Of [e-mail] ill tile "Ower soil layer and is
Pcr-TiO-'-s to the roots of the trees. The deeply develop-
ing root system Of almond trees Permits to rise for their
cultivation Plots Of land which are not saitable for
other a3ricult-Tal crops. An evaluation of different
kiiids Of !Mt ral soils ill 1,190slavia for almond c_Itiva-
tiOn is given. -- Ye.A. P_-@_sjjjjja
Card 2/2

SLOBODAJ@, I"lic, dr. F. r; -3 p, o
IcL rfs. Med. g'as. 17 no.83
Use Tasculat ir -,:ase@ 0-,' -a- -s czna7-
-3) 3 5 1 -Ag-S C'13

Lucic
7
8t.OBqPAN" CY8614,11be ob@'xemtntm CPeAMIUM
I - [06ntrplling rust
!W1ja`(P1an1 Prot., peogtad], 10-52,
1-4. pp. 43-18, 2 pl., 1952, (English, surnmary.]
In labovitor ntrol of brown rust [Puccinia iriticina:
y and field trials fat the @P_
ef RA-'11-, 32 p.-243) bil whent at the InAitute for Plant Protection, Beogrnd,.
I per cent.suWvi@ttc [31, p. IM), 0-1 per cent. colloidal sulphuri.and 045 per cent.
p _c
duphar 131, p. 134 and-below, p..290] were most effective 7hen applied three times
(Imfore variug.' tifttr flowering; and before wux i eness) under normal weather
rip
conditionst. or More ofteifin-bad weather, the infection percentages being 0, 15,
and 10. rv.,ipeclively, i@sagminst'100 for the untreated. -No uredosporcgermination@
ocviirred after iiid none were found on the leaves after
tientifle, f. A - k-cry-stimll. percentage of uredmqpores. germinatcd after treatinclit
'With the otlicr'two clientil-A, itk only almilt 10 to 15 per cent. were found O'n the
leltv(-@. Nmle4titx mixtilre (0-5, 1.,aitit 2'per cei%L) h1lowed -to per cent. infect ionat.
till Ili rve cmict-tif ral ioN, I0% N-low, pi 2-0.81..

starshly loytenant.
Training device for shooting imichine guns from armored carriers.
voen. vedt. 35 -no.5:74-75 Ag 155. (MM 110)
(Machine-gun drill and tactics)

GIBSM". Ye.Ye., professor; SIADMHUDDY A.Ta ksadid&t tekhalcheakikh
L I .
nol ; YU IT. Te.7. TA, N.A., rodektor;
FMOVSKAYA. Ye., tokhxd;;o9kly redaktor.
[PUnnW city bridges) Plantrofts mostov y gorodakh. Moskva, Isd-vo
Kinlaterstra, kommumllaego khosialetya RSM, 1955. 111P,
(DrIdges-Dwelga) (Jan 8:6)

GIBSHMIAN, Ye.Ye., prof.; SLOBODCHIKOV, A.Ya., dots.; GRONDA, V.I.,
red. --- , -
[Municipal engineering structures) Gorodskie inzhener-
nye sooruzheniia. Moskva, Rosvuzizdat, 1963. 72 p.
(MIRA 17:6)

A Y
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JE(3 '-@r

0 0 0 0 0 0 0 0 0 0 40 0 O"i'l-
F
Sal f @ ? ? ? I ?1 0 0 0 0 1 1 0 1 wml
A 4 L r U 14 1) 16 1)
0 0 0 .1 0 e 0 0
f
a 11 U k It Is M 0 41 Q41 14 d
forinsidohydo exv.-
lio W IP,
1947. Nl. TTf,:, 5tyW,-, -f
an(' 01 I)IM1014ttrUlAtilt.
ti"U"' Wders is OriftIv (16LUS.Md. M, flu,(.It
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00 40 goo
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LEVIN,A.14., kandidat tekhnichefskikh nauk; SLOBCDCHIKOV,B.D., inzhener
Continuous production of phenol-formaldehyde molding powders. Xhim.
prom.no 10;289-290 0147. ()WA 8: 12)
(Plastics industry)

- j-- ! @ - 1 7- ,- ;-I - @ I --" -
TURSKlY,,Yujj.; SEMENOV, S4S.; SOKOLOV, A.D.; SLOBODCHIKOV, B.D.
Dephonolization of waste water in Bast Buropean countrien. Ckz. prom.
no.2:54-56 7 158. (NM 11:2)
(Burope. lastern- Sewage--Parifi cation) (Phenole)

SLOBODCHIKOV, B.Ta.
Hydrochemical conditions of lake Saran according to data for
1947-1948. Trudy Sevan.gidroblal.sta. 12:5-28 151. (NLBA 9:8)
(Sevan. Lake-Water-Analyals)

@_.SLOBODCHIKOV, B.Ta.
Hydrochemical conditions beneath the Ice of Iske Seven during 1949
and its effect on fish culture. Trudy Sevan.gidrobiol.sta. 12:
141-146 '51. (NLHA 9:8)
(Sevan, Laks-Vater--Analysim)
(Se@an,! -lake--Fishes)

SLOBODCHIKOV, B.Ya.
__
Oxygen regime of Iake S8van based on data for 1947-1948. Trudy
Sevan.gidrogiol. at&. 14:165-181 '55. (MU 9:8)
(Sevan, Lake--Oxygen)

SLOBODCHIKOV, B. Ya.
Problem of nitrogen in waters of IdLke Seven. Trmdy Sevan.g1dregiol.
sta. 14:183-195 '55. (MLRA 9:8)
(Seven. Lake-Nitrogen)

SLOBODCHIKOV, B.Ya.
Chemical composition of the basic invertebrate representatives
of Lake Spvan. Izv. All Arm. SSR..Biol. i sellkhoz. nauki 9 no.
12:123-125 D 156. (MRA. 1C-:2)
1. Sevanskaya gidrobiologicheakaya stantsiya Akademii nauk
Arr,7anskay SSR.
(Savan, Lake--Invertebrates)

SL6BODjM'-GV, V.
Field Crops
Further wasy for raising crop yields. Kolkh.proizv. 12, No. 1, 1952.
Monthly List of Russian Accessions, Library of Congress, June 1952. Unclassified.

S-1
-rair c-c-s -7*
@--I@ovinces of '-o.
nS llil-rFrv nf' C-=L-r-@ss

SERGEYEV, A.; SLOBODCffIKOV, D.
Building mechanized grain-cleaning and drying barns. Sell.
stroi. 9 no.2:12-14 Mr-Ap 154. (MIRI, 13:2)
1. Nachallnik Krannoyarokogo krayevogo upravleniya po stroitell-
stvu v kolkhoxakh (for Sorgeyev). 2. ZavGduyushchiy Idrinskim
rayonnym otdolom po strottelletvu v kolkhozakh (for Slobodchikov
(Grain--3h7ing) (Grain--Cleaning)

BARAITOV, A.N.; YEGIRIOV, K.I.; ZELITSIR, Ye.I.; LEBEDEV, N.H.; SLOBOD-
IWMISrN, H.S.; SRUITSKIT, I.A., t
CHIKOV. D.A.; C ekhnic@Teay
i@elfsktor --
[Geodesy in tunnelling] Geodeziia v tonnelestroerii. Moskva,
Izd-vo geodezicheskoi i kartograficheFikoi lit-ry. Pt. I [Geo-
dotic work on open surfaces] Goodezichookie raboty na dnevnoi
poverkhnosti. 1952. 503 p.[Microfilml. (KIRA 8.7)
(Geodesy) (Tunnelinp)

BULANOV, A.I.; IZKAYLOV, P.I.; PZTROV, N.A.; TROITSKIY, B.V.; SLOBODCHIKOV,
-il - I 1 1. @14
, 'r C -
vi@v -
D.A., redaktor; LIVGOK, G.F., redaktor; INOZMTSEVA, rr;
-OZIVIN, G.M., tekhaicheakiy redaktor.
[Topography) Topografiia. Pod obahchei red. D.A.Slobodchikova.
Moskva, Izd-vo geodesichaskoi lit-ry. Pt. 1. 1954. 539 p. [Microfila]
(Topographical surveying) (MLHA 7:11)

B[JfANnV, Aleksandr Ivanovich; DANILOV, Vladimir Vladimirovich;
ZAKATOVP Petr Sergeyevich, prof.; TERMOIDV, Boris Pavlovich
[deceased]; PAVLOV1, Vitaliy Fedorovich; TFnITSKIY, Boris
Vladi,nrovich; SLOBODCHIK'OV, D.A., red.; VASIL'YEVA, V.I.,
red.izd-va; ROMANOW, V.V., tekhn.red.
[Geodesy] Geodeziia. Moskva, Izd-vo geodelichesk4i lit-ry.
Pt.l. 1962. 315 P. (MIRA 16slO)
(Geodesy)

YXISNEV. A.Y.. Inzhener; ZHUYKO, I.S., ekonomist; KUSHNIKOVA, K.S.,
agronom; NIKIFOROV, A.M.. Eigronom; SAGALOVIGH. TO.N., sgronom;
SLOBODCHIKOV, D.D., agronom [deceased]; MOROZOV, D.N., redektor
Ca-ec'eWed ":Uft. A. L. takhnicheskiy redaktor
[Agronomist's handbook arA calendar] Iralendarl-spravochnik agronoma.
Moskva. Goa. izA-vo sallkhoz. lit-ry, 1956. 346 p. (MIaA 10:2)
(Agriculture--Handbooks, manuals, etc.)
14

SLOBODCHIKOV, G.
AID P - 198
Subject USSR/Engineering
Card 1/1
Authors Apurin, I. G. and Slobodchikof, G.
Title Partial Summary of Production Cost on the Oil Field
of Malgobekneft' Trust @
Periodical Neft. khoz., V. 32, #2, 64-65, F 1954
Abstract Brief reviews and analysis of the production cost
for the oil field of the Malgobekneft' are presented
for 1952 and 53.
Institution None
Submitted No date

' inzh.; SPIRIDOVICH. N.F., inzh.; GOVOROV, V.P., inzh.,
-5!MO4W;ed.; YELICHMOT, T.S., red.; BERMT, I.Y., otv.ze vypusk
(Program for the subject *Water supply and sewer systems* in the
technical school major *Unitary installations in buildings.*
approved by the Kinistry of Higher Education of the U.S.S.R.,
April 14, 1955. A 103-hour course] Programma predmeta 07odo-
snabzhenie i kanalizataiisl k uchebnoma planu spetsiallnosti
tekhnikumov "Unitarno-tekhnidheskie ustroistva zdaniig* ut*erzhdon-
noma Kinisterstvom vysshogo obrazovaniia SSSR. 14 aprelia 1955 g.
Ob"em Drogrammy - 105 chasov. Koskva, Uchobno-metodichaskii kabinet,
1958. 9 P. (KIRA 12:2)
1. Russia (1917- R.S.F.S.R.) Ministerstvo stroitel'stva. Otdel
uchabnykh zavedeniy upravlenlya kadrov.
(Water-supply engineering)

SERGEYEV, L.; SLOBODCHIKOV, R. (Krasnoyarsk),- LIVOV, M. (Stali-o);
PETROSE-U-ITS K-h.; GO'LOVENKOV MO; LYAKHOVETSKIY, M., (Kherson);
FINOGENOV, N.,, (Petrozavodak
Everyday work. Grazhd. av. 17 no.12:17-19 D 160. (MIRA 103)
(Aeronautics, Commercial) (Flight crews)

U V
ATAULIN, V.V.; VIASOVA, R.M.; DAVYDOVA, Te.A.; DANILENKO, I.S.; DZIOV. V.A.;
DUBROVIN, A.P.; YEFANOVA, L.V.; KARPEITKO, L.V.; MPIKOV, L.N.;
KOTRELEV, S.V.; LUKITANOV, N.I.; MEL'NIKOV, N.V.v prof., obshchiy
red.; WRTYCHAN. A.A.; NEMTIhOV, A.M.; POGOSTANTS, V.K.,- SEMIZ.
M.D.; SKOBLO, G.I.; S@W@BO SMIRNOV, V.M.; SUSHCHINKO.
A.A.; SOKOLOVSKIT, MA.: TRETITAKOV, K.M.: FISH, Te.A.; TSOT, A.G.;
TSTPKIN, V.S.; CIEWMVSKOY, P.A.; CHIZHIKOV, V.I.; ZHUKOV. V.V..
redAzd-va; KOROVENKOVA, Z.L., tekhn.red.,- PROZOROVSKATA, V.L.,
takha.red.
[Prospects for the open-pit mining of coal is the U.S.S.R.; studies
and analysis of mining and geological conditions and technical and
economic indices for open-pit mining of coal deposits] Perspektivy
otkrytol dobychi uglia v SSSR; Issledorania i analis gorno&ologi-
cheskikh uslovii i tekhniko-ekonomicheakikh pokazatelei otki7toi
razrabotki ugollrqkh mestorozhdanii. Pod obahchei red. N.V.N811-
alkova. Moskva. Ugletekhizdat. 1958. 553 P. (MIRA 11-12)
1. VaesoyuzW teentrallnyy gosudaretvannyy proyektnyy inseltut
"Teentrogiproshakht." 2. Cblen-korrespondent AN SSSR (for Moll-
Rikov).
(Coal mines and mining)

SKOBLO, G.I., gornyy inzh.j,,SLOBODCHIKOV F I gornyy inzh.
Annual rate of strip-mining operations. Gor. zhur. no.9:14,.-16
S 162. (MMA 15:9)
1. Vaesoyunnyy tsentrallnyy gosudarBtyenrW institut po,
proyektirovaniyu i tekhniko-okoncmichookip oboanovaniyox
rasvitiya ugplInoy pronyahlonnosti, Moakv*.
.(Krannoymirsk Territory-Strip mining-C61d weather operations)

SLOBOPICHTKOY s. v. : N@astar Phya-Ma-th Sci (dimi) -- "q-ilie electrical properties
of alumirrma aa?seniraa". Leningmd, 1958. 5 pp (Acaa Sci LES-R, F@nys--Tlech Inst),,
150 copies (KL, I-To 6, 1959, 121j)

AUTHORS: Nasledov, D. N., Slobodchikov, S. V. 57-28-4-5/39
T IT ILE An Investigation of the Electric and Thermoelectric Properties
of AlSb. (Issledovaniye elektricheskikh i termoelektricheskikh
svoystv AlSb.)
PERIODICAL: Zhurnal Tekhnicheskoy Fiziki, 1958, Vol. 28, Nr 4, PP, 715-724
(USSR)
ABSTRACT: The electric and thermoelectric properties of AlSb wer in--
vestigated here. The latter pertains to that class of semi'.
conductors which form a link between the elements of the 3rd
and 5th group. On the basis of the investigations the following
could be determined: 1.) The dependence of the electric con-
ductivity and the Hall constant on temperature was examined in
the range from 78 to 12000K and the temperature dependence of
the thermoelectric force in the range from 140 to 12500K. In
agreement with other references (1 to 3) the width of the
forbidden zone determined from the temperature dependence of
the electric conductivity amounted to 1,57 eV. 2.) By the
measurement of the thermoelectric force an admixture-level
Card 1/3 was determined at 0,77 eV. 3.) The mobility of the holes at

An Investigation of the Electric and Thermoelectric Properties 57-28-4-5/39
of AlSb.
2
room temperature was 150-240 sek * The ratio of the mobiliV
of the holes to that of the electrons seems to be near unity.
4-) In all investigated samples from about 2500K and more the
mobilit i/ follows the law
- 2
u - aT . In the entire temperature range the mobility
changes acoording to the law-
1 3/2 -3/2
1.1 @_ aT . + bT . 5.) According to the measurement data of
the thermoelectric force the position of the Fermi-level in a
wide temperature range was compilted. 6.) The effective mass
of the holes was evaluated b means of the formula by Pisarenko.
Ill tke rangp frost 400 to 700 K the mean value of it was (0,9�
� 0, 1) M04(mo denotes the mass of the free electron). For the
values of a and b a table is giv"en. The samples were placed at
the authors' disposal by D.A. Petrov ana M.S. Mirgalovskaya.
There are 10 figures, 1 table, and 6 references, I of which
Card 2/3 is Soviet.

HISLEDOV, D.N.; SLOBCIDGHIMY, S.V.
Blectric properties of n-type AlBb. Fiz.tver.tela I no,5:74&-754
Ky 159. (MIRA 12:4)
1. Leningradskiy fisiko-tekhnicheekly institut AN SSSR.
(Aluminum antimonide-Blectric properties)

@7933
S/181/62/004/005/022/055
B125/31,08
S. V.
U 'I, H 0 il,@* 4,ylova, P. Lllasledov, D. N. , 'and Slobodchikov,
a-netic effect and photoconductivity in InP
fz Pizika tverdor--o tela, 1227
v. 4, no. 5, 1962, -1232
Tle ohotom--Tnetic effect and the photoconductivity of n-type InP
t 16
are investi--ated at 100-3000 X for carrier concentrations of n=8.4-10
'-'-'1017 C@-3 at 3000!:. The photoelectromotive force at 300 0K up to
U t,
-630101 oe increases linearly with the ma&netic field strength. The
pl-ot-omal-.netically induced photoelectromotive force of an electron
seniconductor with impurities is V I HL(1/tn1) with L =
pm 0 pm
The photoconductivity is 'then V PC = i0 PC /tn1). 1 and t denote
len-4-h and thickness of the sample, D is the diffusion constant. The
, 0,
-lifeti'mas and are to be determined from photomagnetic effect and
P.2 PC
)-,,otoconductivity, respectively. The photoelectromotive force decreases
with decreasing temperature. At the same time, photoconductivity increases
Card 1/2

S/181/62/004/005/022/055
?hotoma:rnetic effect and ... 3125/3108
by more than ton times. it decreases at modulation frequencies of
,.,100 cycles. The electron lifetime at 300 0K is 1 7-10- 3_2.2,10- 3 see,
t'-at ot' the minority carriers is 2-10- _ 2.5-10- sec. The diffusion
of the holes increases with ino7easing temperature. This
depandeace is caused by the decrease of the Ifole lifetime with
d,c-cre&:;_-*n.- temperature. The electron lifetime increases with subsiding
There are 5 figures @iost important English-language
reference is: C. Hilsum, B. Holeman o4eedings International Conference
orl Se::'.iconductor Physics. Prague, 01
Fiziko--tekhnicheskiy in'stitut imeni A. F. Iof-"'e AN SSSi
Leninc-rad (Physicoteciiyh6a2, Institute imeni A. F. Ioffe
i's jSSR, Leningrad)
December 206, 1961
2/12

NASIEDCV, D,N.; �LOBCDCHIKOV, S.V.
Photoconduc%ivity in GaP. [e-mail]. tela 4 no.11:3161-316/+
N 162. (MIU 15:12)
1. Fiziko-tekhnicheskiy institut imeni A.F. Ioffe AN SSSR,
Leningrad*
(Photoconductivity) (Gallium phosphide)

w
G 4 YE *;,", S.V.
F,ho,@-,electric. crov.111, -ties of lnP. -1z,,. AN 'I@jrk. f.z.-tekh.,
I . I
k-hi-mi. i geol.rauk no.4j:109-110 163 . O-qRA is:!)
1. Flziko tekhni@71,eskiy institut AN Turkmenskoy "SR.

MIKHAnOVA, M.P.; NASLEDOV, D.N.; SLOBODGHIKOV, 4.V.
Temperature dependence of current carriers lifetime in indium.
arsenide. Fiz. tver. tela 5 no.8:2317-2323 Ag 163. (NMA 16:9)
1. Fiziko-tekhnicheskiy institut im. A.F.1offe AN SSSR, Leningrad.
(Indium ar13enide--Electric properties)

VORONKOVA, N.M.; NASLEDOV, D.N.; SLOBODCHIKOV, S.V.
Photoelectric properties of gallium arsenide. Fiz@ tver. tela 5
no.11:3259-3263 N 163. (KRA 16:12)
1. Fiziko-tekhnicheskiy institut imeni A.F.Ioffe AN SSSR,
Leningrad.

ACCM-ION NR: AP4033415 s/0202/64/000/001/0013/0016
AUTHORS:' Agayev., Ya.; Mikhaylovaj M. F.; Slobodchikovp S. V.
TITLE: Photomag'netic properties of p-InAs
SOURCE: AN TurkmSSR. Izvestiya. Seriya fiziko-takhnichoskikh, khimichaskikh i
geologicheskikh nauk, no. 1, 1964, 13-16
TOPIC TAGGS: photomacynetic -effect, p indium- arsenate, diffusion length, #ep up
I
transformer, preamplifier, amplifier 28114, voltage analyzer AN 1 .50, monochroz@ator
Z@a 2, globar lamp, sodium chloride
ABSTRACT: The spectral distribution of p*hotomagietic effect in p-InAs was studiedL
experimentally at various temperatures. From the data obtained, estimates were
made of the diffusion length'for migration in n- and p-type InAs in the temperature@
range of 80-300K. The method-used for the photo@agnetic measurement was the one
used by 1-1. P. 14ikhaylova, Di k.-Nasledov, and S. V. Slobodchikov (FTT, t-5, vy*p-
8.1 2317, 1963; FTT, t.IV,-vy*p.5, 1962). The signal was fed into the step-up
transformer of the preamplifier and then-into a measuring amplifier 28.1H and a
voltage analyzer AN-1-50. The spec@men was placed in a glass cryostat.with a
sapphire window. It was possible to vary the magnetic field from 0 to.8= -
Card 1/2

S/0202/64/000/002/0003/00077-
ACCESSION NR: AP4037554
AUTHOR: Agayev, Ya.; Voronkovs, No H.1 Slobodehikov, So V.
TITLE: Photomagnetic effect in p-type
SOURCE: AN TurkmSSR. Izv. Sertya fisiko-tokhnichookikh, khiui-
cheskikh i geologicheskikh nauk, no. 2, 1964, 3-7
TOPIC TAGS: photomagneti7c effect, gallium arsenide, somiconductorg
energy converter, current carrier lifetime, carrier lifetime
computation
ABSTRACT: Photomagnetic effect in p-type GaAs.was-studied in a
temperature range from 80 to 300K as a function of radiation and
magnetic field intensities. The specimens had a concentration
range from 1013 to 1017 Cm-3 and were obtained by zone malting with
and without iron doping. The incident illumination provided by
a 500-watt tungsten lamp was modulated by a rotating chopper and
filtered to pass the 600-800p band. The-magnetic field varied up'@-f.
Card 1 3

ACCESSION NR: AP4037554
to 10 Koe and the temperature function was plotted at 8 Koe. The
photomagnetic effect was observed in specimens having concentration.,:
below 105 cm-3. The temperature function of a short-circuit phot 0-
magnetic current has an "S" shape and varies by more than an order.
of magnitude from 80 to 300K, which is at variance with Hurd's
results (Proc. Phys. Soc. v. 79, 507, 1962). The d-c component
of the illumination exerts an influence on the photomagnetLc
effect only at low temperatures. The photomagnetic effect as a
function of incident radiation and magnetic field intensities was
found to be linear In both cases. It is concluded that the mag-
nitudes of experimen.tal variables'were confined within the ILULta-
tions of the small-signal approximation which, consequently,
could be used to compute the lifetime of minority carriers* Orige.
art. hams 4 figures, 4 formulas, and I table.
ASSOCIATION3 Fiziko-tekhnicheskLy Lnstitut AN Turkneaskoy SSR
(Technical Physics Instituteg AN Tutknen SSR)
Card 2/3

S/0181/64/006/007/2175/2176
ACCESSION NR: AP4041725 I
AUTHOR: Sloboddhikov, So V.@
TITLEs 7@hermal emf in InP
SOURCE: Fizika tverdogo tela, v. 6. no. 7, 1964, 2175-2176
TOPIC TAGS; thermal*emf, indium phosphide, Hall effect, conductiv-
ity, temperature dependence, carrier density
-`cABSTRACT: The thermal emf was measured in savoles of electronic
indium phosphide at 100-800K, simultaneously with a study of the
temperature dependence of the Hall effect and of the conductivity.
Two samples with carrier densities a x 1017 and 2 x 1018 cm-3 at
room temperature were used. The thermal emf was determined with a
,procedure described previously (Do N. Nasledov and So V. Sldbodchi-
:kov, ZhTF v. 28, 715, 1958).; The results agreed with calculated
curves based under the assum#tion of predominant scattering by the
3L/4--

JiCCFZSICN NR#AP404172S
f
a
;;J
CArd 3/4
WOLOSM, 01
Temperatuzv dependence of Hall ccefficient
(1, 2) and of the =Wkictivity (3, 4)
1 and 3 - sample no.. 1
and 4 - sample noe 2.

Ised as a source of monochromatic.light.- In many.,, compensated
emiconductor compounds' with: a wide -.fQrbidden band-there is:@often
-i exceeds thd'true,
)bserved an additional whic',

ow e i anoe uneompensated:
@hotoeonductivity,' H ev r for low resist*
luminum.antimonide tested at'room temperatur4@ the _true@ photocondue
of - e. A @6vauated-,;
Avity was predominant, The width t6 f orb iddah @@baz
or. X.1, was 1.6, ev, Variebion-of the. photdrespon,66' 4ith- t6lnperatiwe
12
e- OK he: ligh source@@.was- an
ras measured over the iht rvai;8o-loo T t
neandeseent tungsten lamp .- AnTS-7-filterwas used to-, give only thw@
hort wave part of,the lGt*@.-Measureidents-were also maCle: with whitd--
Aghte Strength of the electrical -field:was- approximately..Ipao V/C;M..:,:,

was
L sublinear relationship with slope of. approximAtel
letermined between the. current. and -the:- intensity' of the@ -uhite - light
'alling.on the sample*. Prig, art, hase. is, fi guroa.
SSOCIATION.- Fiziko-teldmicheskiy! indtitut AN Turkmenskoy 33R
Mysicotechnioal Institute of'the:A6ademy@of,Soienoes _11!@I@n. MY

OMITTED: 05ma764 ENCIL: 00' SUB 'CODE: M9 F_.M
R RTW BOV: 002, OTHER: 004
Corti
;
k
.
.
;
L

Card '2/3

T.
I'M: APS012534 UR/0181/65/007/005/1312/1314
AUT'MRS Goryunova, 11. A., Kesamanly, F. P.; Nasledov, D. N.;
V. V.; Rud', lu. V.; Sl
TITLE: Electric and photoelectric properties of ZnSiP
2
SOURCE: Fizika tverdogo tola, v. 7, no. 5, 1965, 1312-1314
TOPIC TAGS: zinc compound, electric conductivity, temperature de
pendcnco, nbotaconductivity, spectral distribution, electric field
dependence
ABSTRt.CT: Most published data on ZnSiP pertain to its physico-
2
chcmical properties only. The authors measured the temperature de-
pendence of the electric conductivity and of the Hall constant of
n-ZrZJP2 in the temperature interval 80-670K, and the spectra dia-
tribution of the photoconductivity and its dependence on the electriii
ifield the intensity of illumination, and temperature (60-290K).
Card 1

L
ACCESSION UR: AP5012534
iThe crystals were grown by a method devised by one of the authora
(Rud', with E. 0. Osmanov, Registration Certificate No. 38432 of
25 June 1963). The samples had a surface of natural brilliance,
and their regular form was attained by grinding. The crystals bad
an electron density -(1-2) x 1017 cm73 at room temperature and a
Hall mobility -70-100 cm2/V-sec. The results are shown in Fig. 1
of the Enclosure. They are briefly analyzed from the point of view
of the possible impurity level scheme and possible main transitionso
The terperature dependence of the width of the forbidder. band in
Ifound to have a constant a = -(7-6)' x 10-4 eV/*K. It is noted that
carrier capture is aspeci-idly effective at low temperatures, Uh
on
'
Of-
the relaxation time of the photoconductivity is of the ordor:
several minutes and decreases with rising temperature. .0mg.:
2 figures. [023

-ISSMUMM Fiziko-tekhnicheskiy inatitut im. A. F. IoM M SM
technical Institute, ALI WSR)

tk@d

.-L 2506-66 -EtIT(m)/F-jC/F-VIG(.m)/EYiP(-t),&*P(h)----IJP-tc)---Rnw j44
!ACCESSION NR:'- uR/0281/65/007/006/1912/1925
AP5014
4UTHOR: Nasledov, Do No; Negreskul,, V. V.; Slobodchikov,, So Ve
'TITLE: On the electric properties of
gallium pj@osphi doped with
l@7
_1
SOURCE: Fizika tverdogo tels, v. 7, no. 6 #111z965 19 915
!TOPIC TAGS: gallium compound, tellurium containing alloy, carrier scatteringi
Icarrier density, electron scattering, temperature dependence, Rau coefficient,
lelectric conductivity
1ABSTRACT: The tellurium-doped Gap cryst%ls are grown from Golution-melts by.a
Imethod proposed earlier (G. Wolff et al., Bull. Am* Physo Soc, V. 29, 16, 1954).
iThe quantities measured were the Hall coefficient, the electric ionductivity, and
ithe temperature dependence of these quantities and of the electron mobility. The
;donor activation energy determined from the analysis of the data was found to be
i - .
;0.11 eV. The maximum mobility at room temperature war. found to be 170 cm:2/V-sec
6 cr@-3.
!for a sample with carrier 2 x 101 Increased doping with tellurium and the
!presence of compensating impurities reduce the mobility. The mechanism of electron
.scattering, which is governed by many still unknown factors$ is discuseedo Origo@.
Card 1/2

Card 2/2

BYCMUIV, ji.(;. C@Jljl [fioriunova N. 0
10772 V.K.J; RUL" Yu.V.;
U ---Y, F.F.; V..k. (@Mitiur
and photoelecti-l- properties of ZrOiP2. IYJ-r. fiz. zhLx.
10 no.S:S67-S?2 Ag 1615. 16:6)
1. Kiyevokiy pedago,71.cheskiy institut im. Gorlkogo.
0

L 2975-66 EWTWY
c
h Nj )----AT/
CCESSIGN NR.0 AP5022437
UR/0109/65/010/009/1707/170
539.293-011-41
'4
AUTHOR: Hasledov, D. N.1 Smirnova, N. N'.; Slobodchikov, S. V.
TITLE: Current-voltage characteristics of alloy p-n-junctions in InAs
SOURCE: Radiotekhnika i elektronika, v. 10, no. 9, 1965, 1707-1709
TOPIC TAGS- current voltage characteristic, pn jun6tion, Inks pn junction
ABSTRACT: The carrier cornentration AP the source. n-InAs material was 5 k 1016 to
1-5:*'l:017'km3; Zn content in the alloy was 6.1-Ve. Current-voltage characterist,
x ics
were taken in the 78-296K range. At 78K, the forward-current vs. voltage
characteristic showed two slopes: 0,, 1.2-1.3 and 1.8-2.8. Crystal-
structure defects are assumed to be responsible for the high-values of '0.- At
higher-than-room temperatures, the diffusion current describable by the'regular
,Shockley theory prevails. The reverse-current vs temperature curve measured
s;
experimentally yields a forbidden-band width of 0.48 ev (at OK). Orig. art. ha
to
2 figures and 2 formulas. 31.

L 297$-66

L -58928-65.,

L@5892P--665
ENCL
2

-WR

f
ty m- sing
im
Spectml distribut
0 6f the
valms
M twO
:md pXACe
p4nSiM 2

7

cL /4
I !;Or

AGAYEV, Ya.; GAZAKOV, 0-; SWBODCHIKOV, S,V.
Photoconductivity in -D-AlSb. Izv. AN Turk. SSR. Ser. fiz.-tekh.
khim. I geol. naak nc.3396-9? 165. (MIRA IS.-12)
1. Fiziko-tekhnicheskiy Institix% AN Turkmcnalroy SSR,

ACC NR- AR7000873 SOURCE CODE: UR/0058/66/000/009/E075/E075
AUTHOR: Mamedova, R. F.; Slobodchikov, S, V.
TITLE: Photoelectric properties of n-type GaP
SOURCE: Ref. zh. Fizika, Abs. 9E612
REF SOURCE: Uch. zap. Azerb. un-t. Ser. fiz. -matem. n. no. 4, 1965, 61-66
TOPIC TAGS: photoelectric property, photoconductivity, Hall effect, gallium,
gallium phosphide, n type gallium
'@T@'-TRACT: Gallium phosphide monocrystals were used for determining the specifil
conductiviLy, Hall effect, spectral distribution and temperature dependence of photo-
conduc fivity (PC) in the 80 - 295K range, The PC maxima of 0. 48/-,-,, 0. 7 /C"C- ,
and 1. 2 zz were noted for 7- = 0. 42 of light excitation (direct valence-to-conduc'-
tion-band transition). The constant white illumination of 8OX has decreased the PC
over the entire spectrum and in particular in the intrinsic PC range and in the
vicinity of 0. 7/u- , while'at 197K, the PC was increased with the exception of
0. 6-0. 9,,GG range. Based on the results of these measurements, the following
1/2

-----------
L, 29093-66 -EVIT(m)jjLEWP(w)/FWP(t)jFTT- T TV[,- I7n
ACC NRt AP60194,01 SOURCE CdYE: UR/0181/65/007/006/193-2/1
6@2--
,AIJTHOR: - Nasl@dov., D, Nil Kegreskulj V. v s3bDodchikDv, s. v.
ORGt Physicotechnical-----@- Institute im, A. F.- I6ff e. AN S (Fiziko-tekhnicheskiy
TITIEs Ele trical pwopertieiyof gallium phosph alloyed with
S.(XJRCEt Fizika tvardogo Was TO 7. no. 6, 1965j, 1912-1915
-TOPIG-TAGSt gallium compound,, tellurium., Hall effect, temperature dependence,$
electron mobility, electric propertyj single crystal
ABSTRACTs::The preparation of GaP-Te monocrystals is described. The temperature
.dependence of the Hall effect and the @ation of electron mobility with temper-
ature are given* A(act 705 x 108 ;!r3,2 Z,-2, where Ei is the deformatioxi.
pote'ntial which, although not known exactlyt was assumed to be 55 eV.: Orig. art.
i
hast 2 figures and '5 formalaii."JUPRO
SU`B OOM 20j, 3.1 siBm DATE, 08Feb65 ORIG REF: 001 OIH REF: 008
Card 'A f

APS020691 UR/0185/65/010/008/0867/087
@(Goryunova
U chkov 0. H.. (Hychkov, A. G.); HgDjEova, N. 0.
@M 10R; yU. V. ; SlObo,dNch.ykAq.V)s;
V =IF@P. UMV
Kesamanl--@ F. P.; ov2 V. K.
(14ityu1mv, V. K.); Rud'
ch
ikov, S. V.)
TITLE:Electrical and photoelectric prvperties Of ZnSiP
2
@7
SOLA(Cr: LIkrayinstRyyJfizycbnyy zhurnal, V. 10, no. 8, 1965, 867-872
V)PIC UM: electric conductivityt Hall constant, pl*otoconductivitYt zinc =Vounds
terqmrature dependenoe, forbidden band ,
ABGTwtcr: The UnVerature dependence of the electric conduct,ivi@y, the Hall constant
't - @- ctral distribu-
in Uie- tarperature runge 80-670K, and the photoconductivit@-(i spe
tion, dependence on the electric field, inte'n'-s-ft-yof -MtRiMtion, and teq)erature in
the xujige 80-295K) werv studied in n-type 74raiP. crystals. Tv average size of the
crystals was 8 x 1.5 x 9.3 mi. The investigated. saWles h an electron 0onCentra-
17 V,
tion of 1-2 x 10 cnCj and a Hall nobility of 70-100 cm /v-sec. - The Hall and
conductivity wasumrwnts weree carried out with do current with the aid of an ordinar,
potentiometer in a constant magmtic field. The photoconductivity was investigated
by a cmpensation mthod utilizing unnodulated constant radiation. A type M 195/3
galvmcwter was used to register t1w sigwl. 7he electric cmuJuctivity ---
sharply and the Hall cowtant inweased sJUMPly Mith decroasing teVeratam. Mdx,
together with the -11 electrm mobility, indicates the pnesm at impirity am-

OkC6 - N_Rt
APS020691
pensation. The Hall electron mbility ciianges between 350 and 670K like 77 On
lowering the ternperature the n-obility increares sharply. The ionization energy Of
tlv@, donur iirpuritics was found to boo 0.00 ev. Intrinsic phatocorKkictivity was found
to predominate at all investipated teq)eratures. Its MAMM Is shifted to the
short -wavelength side with decreasing tenWreture. The width of the forbidden bands
its variation with tenperuture, and the coefficient dependence of the PhDtDCOWuct-
ivity on the electric field is linear up to fields of 20 Wan when beating apparent-
ly becoms appreciable. At rx)m tenperature an acceptor level has been noted at
0.32 ev above the valence band. 7he activation energies of the donor and acceptor
levels were also determined frcm the tenperature dependence of the photoconductivity-
Large rulaxaticn tims of the photoconductivity have been obser%vd. An W=W level
diagrun of the inpurity transitions is proposed. "In caoichnicn the suthm Us
their gratitude to Professor D. M. Naslyedw fbr support aW Also-sim of the U09061
orig. art. has: 5 figums.
ASSOCIMOM: Kyyivslkyy pedbwtytut im. 0. IL flar'kdo EKiywlskiy I I jj,XU*mkiy
inStitUt JJL A. M. Qarkoip] VJPV Pednaogje4d Instit"
SM =I; Wo Cr
M, Do
19SO04
MR REF SOVs 007 01=1 M
ard 212

L 14226-66 EWT(1)/EWT(m)/AiR(t)/W(b),. IJP(c) JD/AT,
6
ACC NR: AP6000883 SOURCE CODE: tjR/0181/65/007/012/3671/.367
:AUTHORS: Nasledov, D. N.; Negreskul, V. V.; Radautsan, S. I.;
@Slobodchikov, S. V.
,ORG: Physicotechnical Institute im. A. F. Ioffe AN SSSR, Leningrad
'(Fizi_ko_-_T_0k_hnfcheskiy institut AN SSSR); Illst tute of AppReq
iPhysicB AN VISSR, Kishinev (Insti,tut prikladnoy f1zlki AN MSSH)
TITLE: Oscillations of photoconductivity in GaP
,SOURCE: Fizika tverdogo tela, v. 7, no. 12, 1965 3671-3673
fTOPIC TAGS: 'gallium compound, photoconductivity, phonon interaction
.energy band structure carrier density
-5
@ABSTRACT: This is, arc@ontinuation of earlier work (FTT V. 6, 1781,-_F','@
11964) on the photoco ductivity spectrum and the band structure of
@GaP. In the-6-r-esent investigarion, the authors studied GaP samples
,obtained by gas-transport reactions and doped with tellurium, in the
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