SCIENTIFIC ABSTRACT RADAUTSAN, S. I. - RADBIL, O. S.

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• Collection: Scientific Abstracts
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• Original Classification: S
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• Document Creation Date: January 3, 2017
• Document Release Date: August 1, 2000
• Sequence Number: 9
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

GORYIRTOVA, N.A.; RADATUTSAIT, S.-I.; KIOSSE, G.A.
New semiconductor compound in the system In - Sb - Te. Fiz.
tver.tela 1 no.12:1858-1860 D 159. (MIRA 13:5)
1. Moldaveldy filial AN SSSR.
(Indium-antimony-tellurium alloys-Blectric properties)
(Semiconductors)

1,3(6' 3011/79-4 -5-25/46
AUTHOR: -Radautsan.-S. I.
TITLE: Investigatizn of the Seat-'ry, of InA.~-.I-n 2Se3 in the System
In-.As-.Se (IssledoAaniya razreza !nAs--'LrL 2Se3 sista-my In-As-Se)
.1..
PERIODICAL: Zhurnal reorganicheskey k-himli, i")59, Vol 41 Nr 5.
pp 1121-1-124 (USSR)
ABSTRACT: The structure of the alloy cf the InAs--In 2Se3 section was
thermally investigated by mearii c,f the metal ml-*:~ros cope MIM-6.
7~14--crDhardaei,,3 -.neaSLrGd ny the gauge
PMT--3, and thermal analysis was cat !-~r m~-ezis of
the pyrometer developed by X. S. K-ur-~%ak.-:,v according to the
differential method. and rii-,~.L-ustruetural in-
vestigation sb--w that In 'Gh;i 3e-1-4--i-c-n Tri~s,-In6~q a formation
of solid solations is imprctat,e. The phase a' -'a.-ram of the
systein InA9--In 3e, via.5 and, -,s sh-z-an by fi-gure 2.
2
The begivri-Ling and t1he ei.d of --6 th-
alloL- are chaz-a2t~.r1.zad by S=
2
Card 1/2 and 21nAa.3In 23 Z~3 h e i (" r C., , I ,. d an~~ 1 y '3 --, -3 0 f

501V/7)' A 5 2--1 "46
Investigation of the of in ~ne Sly~i-,,em in-A-s-Se
the all,.Ys 31nAs.2In.-,3u IDA-3.1-il st~-- L-111s. Ir. Se viere
3 2 3
recordL~~ and are sh -~vin Ity f 3 4 and In the three-
component ~,L~stem ir-As.-Se t'llez.,L e-cls the ~a- : of
in I's - Dc.2Se awl s ii~ s --lut --, -is w:L t h -nova le tit bonds . There
are 5 f igor,?s and '. rafer-n~----s, ~ of are Soviet.
ASSOCIATION: 1.1c-Irla~,skiy fl-lial Akadem.Li n-uuk SSSR 1,t";~'Ldavi&~:~3ranch of
the A '.alemy ct USSR'~. institut
Ak~~,demii :-ai~k S33H in'~t.,tlt-~ cf the
Acudemv USSR)
SU3Y,ITTED: August, 30,
Card 2/2

s/081/6O/ooo/bo7/bo2/O12
Aoo6/Aorji
Translation from: Referativnyy zhurnal, Miimiya, 1960, No. 7, P. 58, # 25699
AUTHOR- -Radautsap, S. I.
TITLE: Some Data on the Al Sb Cd Ternary System
PERIODICAL: Uch, zap. Kishinevsk, un-t, 1959, Vol. 39, pp. 69-72
TEXT. The author investigated a series of samples of AlSb - CdSb cross
section of a ternary diagram. Solid solutions are not, formed in the AlSb
CdSb, system.
L. Shvedov
Translator's note: This is the full translation of the original Russian
abstract.
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S/181/60/002/01/11/035
3OO8/BO11
AUTHORS: Nasledov. D. N., Pronina, M. F., Radautean. S. I~
TITLE: Some Optical Proportion of Solid Solutions of Indium
Araenoselanides and Indium Arsenotellurides
PERIODICLL: Fizika tveTdogo tela, 1960, Vol. 2, No. 1, pp. 50 - 51
TEXT: The authors found a varying 11 olubility in the systems
InAs-In 3Te3and InAs-In 2Se3 (Refs. 1,2), which is explained by struc-
tural and -energy factors (Ref. 3). When studying the forbidden zone
in alloys of the systems considered, they determined AE values for dif-
ferent compositions, according to the absorption edge. The method's ap-
plied to the synthesis and homogenization of the alloys had been de-
scribed already earlier (Refs. 1-3). The absorption spectra were re-
oorded with the aid of the infrared spectrophotometer OKC-14 (IKS-14).
Fig. I shows the absorption curves of InAs, In 2Se,9 as well as
41nAs.In2Se 39 and 21nAs-3In2SeY The longwave absorption edge shifts
Card 1/2

Some Optical Properties of Solid Solutions of S/181/60/002/01/11/035
Indium Axsenoselenides and Indium Arseno- B008/3011
tellurides
regularly from one binary component to the other. This is indicative of
the fact that the width of the forbidden zone of the alloys has inter-
mediate values between 4E - 0-3 ev and AE - 1.2 ev. Fig. 2 shows ab-
sorption curves for InAs, InAs.In 2Te 39 and InAs.3In2Te3. Also in this
caae, the absorption edge shifts regularly from InAs to In 2Te 3' Re-
sults of optical measurement confirmed the possibility of obtaining,
substances in which the width of the forbidden zoney compared to the
AE values of the binary initial components, has intermediate values.
The authors thank N. A. Goryunova for her discussion of resultsp and
Bo V. Pavlov for his aid in measurements. There are 2 figures and
references: 4 Soviet-
ASSOCIATION:
Leningradekiy fiziko-tekhnicheBkiy institut AN SSSR
(Uninarad Tastitutg of PhXsics and Technologx, AS U55
Moldavskly filial AN SSSR (Moldaviya-Branch of the
AS USSR)
SUBMITTED: May 11, 1956
Card 2/2

r "I II('., b 1
IOU
0
t.
S
-011 C'62. 1
13 b0,
T~o
C,
0
J~o
;,o 0 "1101
Aj
IN \'o
C'13~ t~ 01)~
O.Se
e z
e 1o- 9's
0 G oi P, t"&-j
5s,
0.9 e irelN jo~~
50 njo. . 0118,1.
f~p ~I 'ne . .
50 Te
C;~o 0). 11 26 Gel CS, '0101 Col. stvaevc,
.~'e5 .'
el -lOle 0~ .a V.C 0
IS 5 -00- 0~ qt Iae
")'o'. a to
G fl 01 0 OS-?o
s e se
V. GN'
G. ,Jr~ GO 0.
'~es Gl-~ I
j3co
jo.'. Oe
e
91"0"
,3.0 5
"e

0: .. ~ ~ ~ ( 2,/()(,()//C)O 11002106 7
itnAioi;raphic inveo-ti,-~,.tion of the 5 1
+ Q
const~~nt of a = 0.128 -0. 003 A. "ha f%CL that the intensities
measured on Del)-yo patterns coincide satisfactorl'i.- -,vith the fi,~-ures computed
i,lteorot ic a 11 confirms that the struc-ture has beencor-ectIly determined.
Y
Comparisons of tho lines on an X-ray picture of the in4SbTe 3compound with
the odditional _es on X-ray pictures of the InSb-In 2Te3subsystem alloys
has shown that ~;he new, compound is present, in the form of an additional
phase, in cert~.in alloys of this subsystem. :-Abstracter's note: Complete
translation.
Card 2112

D201/D301
T, 0 ---IS Radau-,,san, .1olodyan, I. P.
and I
T 1)4
--ffusion annealing of the InSb-In 2 Te3 cuts of the in-
dium-an-L,imony-tellurium triple system
E~'__H 10 D 1 C A L Referativnyy zhurnal, Avtoiniatika i radioelektronika,
-no. 2, 1962, abstract 2-4-5m (Izv. Mold. fil. AN SSSR,
1960, no. 3 (6,D), 37-47)
71S n C_
E.C 0 various methods tv"ne authors carried out investigations
-n-,.o synt-'esized triple-system. alloys of In-Sb-Te (4 alloy com-
,.)o,ands of t'-r-e InSb-Tn 2 Te 3 cut : 9 I-"Sb.In 2Te 37 31nSb.In 2 Te 31 InSb.
and InS up to diffusion annealing and after this
7n, n e jb.31n Tre-, cD
2
,jrocess. 'The following diffusion annealing me-uhods were used: Pro-
loli--ed annealing, annealing Under pressure 0 and zone equalization.
T'he artnealing was carried out at 400 - 500 C for 800 - 2700 hours
4
_Ln ca:)su'Las evacuated down to 1 x 1o-13 mmHc- and then filled with
Card 1/3

51/194/62,/000/002/044/096
Diff,usion annealinisr o~ D2 0 1 //D3 01
'21'it-, ~,nnealin- under pro~.,.,3ure wa.,.i carriled out in the atmoophe-
U
o;* ej Lhi.l". niIU-rOC:,,-UIn Or hU
ydrotruri, at a pruuoure ot' 1200 - 700 atm
k~ ia 'kL k2 ~'a ture OL" 5000C. The dUl',Ltion Uf UnnONAing varied from
to ~00 I-iours. An extra heated oven was used for zone equaliza-
12.'-.e alloy was plLLced in a quartz ladle in an evacuated and
-en a.-6-on-f-illed quartz !Ubu. The speed of tube movenent in the
z~,~ - I U
furnace was 12 mm per hour. The temperature o_L- the twin-zone section
was 750 - 8000C, the additional heating temperature was 450 - 5000C.
'a -_ ~nomo:-,eneity of synthesized alloys was checked by X-ray, thermal
and mlcro6-uruc .uure analyses. T.he microhardness of various phases
-er-4 of T
!...,a sdew -Med. The analysis InSb-In2T e3 cuts has shown that for
a wide ran-e of concentrat-Lons no hard substitution solution is
ormed. -Prolonged annealing under pressure does not change appre-
ciably the structure of analyzed alloys. X-ray analysis shows no
pa-se multiplicity of the investigated alloys. The zone equaliza-
-w-ion of the 31nSb.InTe 3 alloy made it possible to separate out a
stable phase with NaCl s-wructure, whose electrical conductivity is
of a semiconductor character. This phase seems to be a chemical
Card 2/3

3/194/62/000/002/044/096
DiffUSiOrl annealincr of ... D201/D301
composition having the formula In SbTe 25 references. /-Abstrac-
0 4 3' -
Uor's not-e: Complete translation.-7
Ca--d 3/3 x

U,2f/ooC)/Go4,-~/04 2/096
D201, -)301
T' T70-q: Radautsan S
nv e:~; r'ain. e-1
,.-,,;aT,1!,S, cc. leciricai jr
C:3 -.operties of In Se-
r.1
a.-,d in ~e compounds 2 3
2 3
e u4v zhur.-a.,
-fera-J- -nyy Av oma t k-~, i radioelel: ka,
R
no. 2, 1D-62, abstract 2-4-p (Izv. "Told. fil. A~',. SQJSR,
I''-j60, no. 3 (6o), 4,..14-55)
.,,ve.-3z-gations into temperature dependence of electr-;c con-
Lc -u iv i ty o ~~czvrcen 77 and 600 - 7000K an d of the Ha-U coefficient
I u Se
a z r o o..- -iemperature of in 2 3 and In 2 Te 3 compounds. At 2000C a-
Li~id Rl c-ani:;e step-i.,ise which indicates a phase transition. The for-
u
zone width of In 2 Te 3 de-~ermined from -he dependence c~-= f(T)
dde.. u
~s j e V a -1,I d -uhat- of In 2 Se 3 deter~.-,ined optically is 1.2 eV. After
1 15
-U'--.e concen-ura-Lion of carriers is of the order of -10
recrystallizatJon increases the concentration
C Z-1 -lepeatued zone
.11
Card 112

, /- :~~A /
inveszf,satin~r certa4-~ 3/ 1 J~/ 62/0001/002/041 2/096
u D.20,/1)301
to iol, 17 -GY
c '~7 At rooia temperazure -e electron mobill'
i"IT is '125 cm~~/V.sec and in In Te it becomes only 10 c 2/V.
M
2 5 2 3
u
se In2 Se3shows -the aniso ropy o microhardness along different
---eava:re PL--nes. Abstract-er's riotue: Complete translation. 7
C a r d 21

S/081/62/000/007/006/033
B156/B101
11, 3 Radautsan, S~ I.-,--Derid, 0. P.
Selenotellurides of indium
iul) f.CAL: i,(-,ferativnyy zhtirnal. Khimiya, no. '1, 1962, 57,
tLbStract 713386 (Izv. Mold. fil. All SSSR, no. 3 (69),
19160, 105-106)
TEXT: The In 2Te 3- In2Se3system is investigated and the existence of
solid solutions recorded. [Abstracter's note: Complete translation.1
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S/C a 1/62/000/009/01, 06/075
A ;T1~OR__-- .-Had--outsan, b . I . , 1.!aaan, I , .4, Molodyan, I P Ivanova, R. A.
IT L_'
- : Formstion of solid soiutions in the syste;.- InP-In 2Se
T OD I --f-erit'Vrjy-. Zhurnal. no. 1Q62, 63, abstract
1 (Izv - :.:old. f i1 - AIN SSSR, no . 1)t':-)O, 107 - 1U)1)
'2_--'XT: Seven alloy5 in the section InF-In.Se 3 of the-ternary syst.em
in-P-Se -aere inve~jtiSated usin.- X-ray structurdand microstructural
analyses, and als,) by measuring the aiicrohardnesses . The alloy
)InP-in 2Se 3 is t,,,onophase whilst alloys with a higher concentration of Se
~ror, 4in?-in Se, to InP-In Se are diphase, both phases cry3tallizing in
2 ) 2 3
the ZnS structure. An increase in the In Se, content is attended by a
2
reduction in t..he lattice parameter, providing evidence that solid solutiorr,
are 'ormed. -Abstracter's note: Complete translationd
rard 1/1

8/0); 5
A C. A IU I
V., Fa~ian, 1. A.
T FIN on Lhe Mrr! )f a ne"I TI-1;t"Wre3
zhumal, tletallurgiya, no. 11. 1~6"),
III Clizv. ro: !ris'IRL"' no. I'u (8M 1061,
r:r-,ss section .-,f' tiie terna,-j sy-;tem In-.;'-)-,-Ie arld 11 lny~
r.11" Tri. ;bTe ;e were inve.,itirated. The sam.ples were prepar-~~; by
3k'
411 a Vacuum ot* 1-10- mm mercury column at ~.'00 0C -.-jith ~-hour
hc,ldlng at this trmipf-raturr~ and a slow miling to'400 Q C at a rate of 50 rieg./hnur.
X-ray diffraction and microstructure StUdies 6ve shown, that in the System
Tn-,ib-.'3e widr~ r-?jrjons of solJ(l solutions are absent and no new compounds are
forITIO(l. Solubility -l' smalL avirunts of InSe In JnSb is possible. In the system
Tn., lyr- "0 in :;IALF, )r th(7 absfncp ot' In,')Ix3e compound. there are
3
-i ~:tnjctijrc- of HaCl type on the base of In, 31yrg 3' The l.attice

t!;e! i~f . . . AC) -2/A 0, 1
paramQtpr varipfi fr, , i 6. L-~,, -it x=l to 6.()6 A at V-)lid of the
-ienti,moo al ...ro-ro aft,lw ~nynthe.-,!-.; ;;haf, rould n,,-.t
he achi,~ved -~.rith t,i-,fl tovwr~l (,~.,u~puund, There are 16
Fkhstracte,rls, notp: Ctr%pjetf~ translation]
V. ~.xeclnf-gorrka
Card 212

S/137/62/0()0/011/020/045
A052/A101
AUTHORS: Radautsan, S. I., Ivanova, R. A.
T PPLF: .,()I I d so Dit I on format I on on the base of compl ex compounds of
J) T18IV C, V13
PERIODICAL: Referativnyy zhurnal, Metallurgiya, no. 11, 1 ~),62, 18,
abstract 111133 ("lzv. AN MoldSSR", no. io (88), 1961, 61., - (o,
summar,j in Moldavian)
TEXT: The systems ",nGeSp -ZnSe, ZnGeSe -Ga Se and ZnGeSe -In Se were
'3 3 *2 3 3 2 3
investigated by means of microscopic and X-ray analyses and by measuring micro-
hardness. The aLLoyr prepared in evacuated quartz ampoules in argon atmos-
phere at 1,100 - 1,250 0C. It Is established teat in the studied systems on-the
base of the ZnGeSe 3 compound solid soluticns with ZnS structure are formed. A
study of the systems CdGeT 3-CdTe, CdSnTe 3-CdTe, CdGeTe 3-In2Te 3P CdSnTe 3- In2 Te _3'
CdGeSe 3-CdSe and CdSn.3e 3-CdSe has shown that solid solution regions exist also
Card 112

3/1 37/62/c-C-0/c I it/cz~O/C-
So I I (I !3()I.u tIon t I oil ull tile hase o C ... A052/A 10 1
in these systerr.s. There are () roferences.
Z. Rogachevskaya
~Abstracterts note: Complete translation]
Card

S/058/62/000/012/037/048
AoWmoi
AUTHORS: Radautsan, S. I., Manovets, L. M.
TITLE: Electrical conductLvity and thermo-clectromotive force of certain
alloys of indium arsenotellurides
PERIODICAL: Referativnyy zhurnal, Fizika, no. 12, 1962, 45-46,
abstract 12E3*39 (lizv. AN Mold, SSR", 1961, no. 10 (88),
71-75, summary In Moldavian)
TFAT: Alloys of the composition (In As) 3x (In2 Te 3)1-x were prepared by
ampoule synthesis from components c)q,qqg% pure and were subjected to a homo-
genizing annealing for 400 - 460 hours at 450 - 6000C. The alloys have a Zn S
type structure: as X decreases the tattice period increases from-6 06 at
x--0,75 to 6.110A at x--0.25. Alloys with x--0.57 and 0.50 show an a~p4ciabie in-
ternal microliquation. The microhardness of the alloys passes through a low max-
Imum (450 kg/mm2) at x--0.50. The temperature.dependence of the electrical con-
ductivity (Cr) of the alloy with x=0.75 Is characteristic for the impurity semi-
conductors; the width of the forbidden zone is A E=0.35 eV. At x=0.57 and 0.50, e
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S/058/62/ooo/b 12/037/048
Electrical conductivity and thermo-electromotive ... Ao62/AlOl
is by three orders higher than at x--0.75 and changes very insignificantly with
temperature. The thermo-electromotive force (oc) of the alloys at room tempera-
ture is equal (in /-LV/degree) to 60 at X--0.75; 25 at X--0.57 and 40 at x--0.50
and increases linearly with temperature. The alloys examined are degenerate ma-
terials.
V. Neshpor
[Abstracter's note: Complete translation]
Card 212

S/IR/62/boo/b 1 1/021/o45
A052/A 10 1
A11111inw,: Ml)lodyan, 1. P., Hadautsan, S. I., Madan, 1. A.
TITLE: :iome ,~tryjctitral and thermal investigations of In,SbTe compound
3
PE8 I OM CAL: Referativnyy zhurnal, Vptallurgiya, no. 11, 1%62 - 9,
, , 1P I
abstract HIVIO ("Izv. AN MoldSSR", no. 10 (88), 1961, -!1 - 94)
TEXT: In,ISUTe3compound and some alloys'of the InSb xTe I-x cross section
were lnve:,tiVateel ~)y means of high-temperature X-ray and thermal analyses. The
alloys were prepared f rom ;?_99. 99%, pure In, Sb and Te, each In evacuated quartz
ampoules, with the application of vibrational stirring in the proness of 7 - 10-
hour holding at PoOoC. After that the alloys were'cooled to 400 0C at a rate of
15 - 20 deg./hoijr, X-ray analysis was made at'20, 100., 200, 250, 300, 1100,.500,
550, 5Y5 and 5850c. It is established that In,,SbTe 3 compound dissociates in
the process of heating and the degree of dissociation increases with temperature
and holding time. The In,,1bTP compound melts Incongruently at 566 � 5 0C. There
I .') 3
are 7 referenceS. Z. Rogachevskaya
FAbstracter's note: complete translationl
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S/137/62/000/005/075/150
A006/Aloi
AUTHORS: Berger, L. I., Radautsan, S. I.
TITLE: Some properties of arsenoselenides of indium
PERTODICAL: Referativnyy zhurnal, Metallurgiya, no. 5, 1962, 14, abstract 5179
(V sb. "Vopr.'metallurgii i fiz. poluprovodnikov", Moscow, AN SSSR,
19061. 129-133)
TEE=': The authors investigated microhardness, lattice parameters, electric
condiictivity 6. concentration and mobility of current carriers. heat conductivity
and the coefficient of linear expansion of alloys of the InAs - In2Se3 section
In the In-As-Se system. 'The alloying of components was performed in evacuated
I
and sealed quartz ampoules. With the aid of the roentgenostructural method it
was established that in the InAs - In2Se3 system substitution solid solutions
with a zinc blende structure are formed in the range from InAs up to the composi-
tion 21nAs - 31n2Se3- It, is supposed that there is no:. InAs solid solution in
Tn2Se3, It was established that At low concentrations of In2Se3 in InAs the
number of current carriers and 0- increase. At a further increase In the In2Se3
content, the concentration of the current carriers and B'decrease gradually.
Card 112

S/137/62/000/005/075/150
Some properties of arsenoselenides of indium A006/AIOI.
Since all specimens showed electron-type conductivity, it is assumed that a sharp
increase of the concentration is connected with the origination of a greater
number of donor levels on account of Se atoms which substitute As. Measurements
of X have shown that if small amounts of In2Se3 are added to InAs, )( decreases
more rapidly than 5. The temperature dependence )(of the alloys is in a satis-
factory agreement with Pierls' theorg. Measurements of the coefficient of heat
expansion show that in the 150 - 650 C temperature range its.value increases
with higher temperature, in accordance with GrUneisen's theory..
V. Srednogorska
I-Abstracter's note: Complete translation]
L
Card 2/2

AUTHORS: Radautsan,--S---I., :Ind Malk.;
TITLE: Some electric properties oi'
oj/()O3/O11/O1 1/0~'
it.-; ,-ii r. e r, o s e 1 e n i d e --
PERIODICAL: Fizika tverdogo tela, v. .3, iv-- 17, 1)019 3324-3329
TEXT: Among the new semiconducting material:3 7!--~- solid solutions of the
type AIIIBV - AIIIBVI are of sDecial intere6t '(;~~:ause of their high
2 3
cationic vacancy concentrations (up to 5.5-C) The authors have
chosen the system InAs -jn2Se3 to study the m,:-;" important physico-
chemical properties of various compositions. C,)mpc3ition and Dronerties
of the ten series of specimens investigated may tie seen from the table.
The specimens, which were synthesized from pur-~ (99~99 %) elements and were
in the shape of small plates with a dimensional ratio of 10 :3 :;, After
polishing, silver was deposited to provide for ohmic contact, and they
were then placed in a special device in argon atmoaphere. A compensation
circuit was used to measure electrical conducti7':ty c and Hall effect in
dependence on the composition of the specimFn3. 1 was investigated
Card 1/4
i

v, i/00Z//oil//ol 1/0~6
Some electric properties of... B -fi 13 8
between 80 and 8000K and log a = f (1/T) curve-, w;;,- :3-;~,,n for severat
compositions. In most cases log a decreased iln. - :r&asing temperature,
for 21nAs-3In2 Se3 and InAs-9In 2Se3 below z,=io. Por 9!n~s-ln 2Se5 and
3InAs-In 2Se3log a did not change with o as a fLinction of
In2Se3 content shows a steep growth at low concentra L tons, and
reaches a maximum between InAs and 21 InAs-in',5e.. With further increase
in selenide content it drops almost exponertt.~~allv. The car.eier vonc'ntra-
tion curve shows a similar course, the mobiliL-j -.-curve drops from
-7-103cm 2/v-sec (InAs) with increasing ent. The fact that
a (and the electron concentration) only innrcait~-~ for 1rw selenide contents
indicates that with growing selenide concentrati,)n tl~e i,ripurity atoms
have ever decreasing influence on the properti-mi che nemic;oadu-tor,
while the role of the intrinsic defects grows. V. P. Zhuze. '~% M. Ser--,~v-zi3
and A. I. Shelykh (FTT, 2, 2858, 1960) and T, N~ Venuall and B.T. kolomiye~,-
(ZhTF, XXVII, 2484, 1957) obtained similar reB-iito, Ar!cordirp to
I. Z. Fisher (FTT, 1, 193, 1959) it may oe assuttt~o that, in the system
studied, the additional electric field induced 1-.. lattice dist,:;rtion
Card 2/4/,.,)-

Some electric properties of...
1
'61/003/011/011/056
ey
B102 B138
increases with increasing number of vacancies in the indium sublattice.
The homogenizing effect of annealing under pressure was confirmed, as
also its influence on the electrical properties could be proved.
D. N. Nasledov and I. A. Feltin'sh (FTT, 1, 565, 1959). are mentioned.
There are 4 figures, 1 table, and 25 references: 21 Soviet and 4 non-
Soviet. The two references to English-language publications read as
follows: H. Welker, H. Weiss. Solid State Physics. 1, New York, 1956t
X. C. Woolley, B. A. Smith, Proo. Phys. Soc. 72, 214, 1956.
ASSOCIATION: Moldavskiy filial AN SSSR (Moldavian iranch of AS USSR).
Inatitut fisiki i matematiki Kishinev (Institute of Physics
and Mathematics Kishinev)
SUBMITTED: May 24, 1961
Legend to the Table: (1) Specimen no. (2) composition, (3) molecularratio
of the binary com onents in %, (4) their *eight ratio in.%, (5) lattice
constant in A, M temperature of analysis in OC, (7) microhardness in
kg/mm2 8) after annealing, (9) before annealing, (10) low -symmetry structure.
Card

RADAUTSAN) Sj.; MATIAN, I.A.
Solid solutions of Andium phosph"de-selen-Ides. izv, AN Mold.
3SR. no.5t92-98 162. (MIR.A 1811~)

Z/055/62/012/0051007/009
1040/1240
AUTHOR: Radautsan, S. 1.
TITLE: Investigation of some complex semiconducting solid structures and compounds of indium,
PERIODICAL: Chekhoslovatskiy fizicheskiy zhurnal, v. 12, no. 5, 1962, 382-391
TEXT: Systems of InP, InAs, InSh with NIS2, InIS0. IniTc., were studied in order to prepare solid solu-
tiom bawecti indium compounds of the type A(III)B(V) and A2(111)B3(VI) under an argon atmosphere. The
products were analyzed by X-ray diffraction, thermally and mciallographically. In such systems solid solutions, 1A
over a wide rangern or new compounds were formed. The temperature dependence of electrical conductivityW
and of the Hall effect were also studied. Solid solutions with the zinc blcndc structure and semiconducting
properties wcre found in the InP-ln,'SC3, and InAs-1112SC3 ond In As-ln2-Tc3 systems. A new compound
ln4surc3 was found having NaCl structure with a lattice parameter of 6.123A and semiconducting properties.
New fields of application for the semiconducting InAs solid solutions on the basis of their electric, magnetic,
and optical characteristics are suggested. There arc 5 tables.
ASSOCIATION: Institut fiziki i matematiki Akademii Nauk Moldavskoy SSR, KiLinev (Ins iture of PbyEics
and Mathematics, Academy of Sciences MoISSR, Kitinev).
SUBMITTED: June 23, 1961
Card I I I

Some investigations of defects in diamond-like semiconductors.
S. 1. Radaut-san.
Semiconducting solid solutions based on mercury selenide and indix.1
selenide. E. I. Gafrilitia, S. I. Radautsan.
iElectrical conductivity and thermoemf of solid solutions of indiun,
phosphide-selenide. d %kt
a~ V. M. Mirzorodskiy,
S, D. Remenko. (Not P~es;ntedaj.j
Physico-chernical properties of some alloys in the system cadmium-
indium-seleniun-tellurium. 0. P. Derid, S. I. Radautsan V. M.
Mirzorodskiy. (Presented by S. 1. Radau-ti-an--20minutes).
.t.-port i)resented at tl--e 3rd National Conferpnce an Semicondu-tor
Comoounds, Kishinev, 16-21 Sept 1963

-scigation of the efficiency coefficients In the solid solution
system, AlSb-GaSb. I. I. Surdlyan. (10 minutes).
'-:nvestigatlon of sorne properties of indium arseno-telluride doped
w.tn bisnuth. D. V. Gitzu, S. 1. Rad utsan. (Not Presented)j-
Pr.ysico-chcrnical properties of the pseudo-binary alloys of arsenic
w'zh indium telluride. B. ?. Kotrubenko, V. 1. Lange, T. 1. Lange.
S:udy of the anisotropy of microhardness of some semiconducting
ccimpounds. D. V. Gitzu, V. 1. Lange, T. I. Lange. -
(?resented by 0. V. Gitzu--i5 minutes).
Rc_po-,-t, oresented at tl-,e 3rd Natiojej Cr.nference on Semiconductor
Co-:~oounds, yis'.ninev, 16-21 Sept 1963

~~ncc:rn;ng solid solutions based on indiun antimonide in the syste;-.
:r~zium -ant imony-te I I urium. 1. P. Molodyan, ~. L.,_Radautsan
i#0 minutes)-
'Zeport presented at the 3rd National Conference on Ser.4-cond-uctor Co-..oo,.:nds,
Y-_shinev, 16-21 Sept 1963

Some properties of solid solutions based on gallium phosphide.
V. V. Nezreskul, S.~ 1. Radautsan, 1. K. Takhtareva (10 minutes).
Some electrical, optical, and magnetic properties of the ternary
seiniconducting compound Cdln2Te4. 1. V. Potykevich, 0. 1. Belyayev,
S. V. Chepura (10 minutes).
Report presented at the 3rd National Conference on Semiconductor Compovnds,
Kishinev, 16-21 Sept 1963

tTASLEDOV, D.N., prof., red.; GORYUNOVA, N.A., prof., red.;
GITSU, D.V., kand. fiz.-mat. nauk) red.; LANGE, V.11.,
kand. fiz.-mat. nauY, red.; RADAUTSAN, S.I., kand. fiz.-
matem. nauk., red.
[Hesearch on semiconductors; new semiconductor materials]
Issledovaniia po poluprovodnikam; novye poluprovodnikovye
materialy. Kishinev, Kartia Moldoveniaske, 1964. 173 p.
(MIRA 17:5)
1. Akaderriya nauk Moldavskoy SSR. Institut fiziki i matema-
tiki.

L EWT(m)/hk1P
6695-6~ (q)IEWP(b) RAEK(t) RW/JD/nK
ACCESSION NR; AT044567 V0000/64/000/060/0134 I~2
AUTHOR: Lyallkov, Yu S.; Kopapskaya Le S.0 Molodyan. 'I o-: P.
Candidate of physico mathematical sciences)
TITLE: Microchemical phase analysis of some semiconductor alloys.of the system
In - Sb - Te
-1A
SOURCE: AN MoISSR. Institut fizlkl .1 matematl`N~ Issledovanlya po poluprovod-"-
nikam; novyl-ye pol6rrov6dn I kovy*ye 'ma ter I a I y* (Semiconductor research; new-seml-
conductor materials). Kishinev, Gos.:Izd-vo Kartya Moldovenyaske, 1964. 134-142
TOPIC TAGS; phase anal sts, micrachemical phase analysis, semiconductor alloy,~
y
In - Sb -. Te alloy, potentiometric tIt.ratJon,', x-ray structural aria I ys 1 s,. micro-
hardness, microstructure
'.ABSTRACT: Microanalysis-of the phasecom osition of In-Sb-Te alloys was: carri ed
p
Out by potentlemetric titration methods; antlmdny, tellurium, andindlum were Ae-.-
termined uilng methods'pre0ously described, Micro-sii6ples.of.-Vie dIfferent':.
I roh*rd
phases of this system were obtained-with a drillinj attachment-to*a m c a ness~
meter base, using drills.Oil mm In diameter. e pliase`.samples obtained InAlils'
_Th
the
mariner were not contaminated by.'other phases provided %dell I I Ing was not deeper.- -
than the phase diameter of 082 m. A comparison of the-single phase alloy I n4SbTej
'A -1 /2.

~-L 6695-65
ACCESSION NR: AT4044567
with the ternary compound In4SbTe3 showed that.the error of element determination
did not exceed Z% (abs.). Molar calculation,by chemical analysis confirmed the,''
In Te Was then.investigated.-
alloy composition.' The three-phase-alloy'31,V_b
P 2
s z
by this method. only the gray and light gray phaies coull be analy ed microcheml
cally. Results Indicated that the gray phase conta i n6d, 611 three elements and rep---'_
resented the solid solution of in Sb, while.the.-light gray~phase revealed only In-'
dium and tellurium. It was shown that thfs~alloy did not contain Its original
compounds InSb and In2Te3- Ingots obtained'after zone. le~eliiiq~df,the alloy
t
In were also.' alyzed. The bejinnlng-- middle'and end of the in-go
Sb In Te3 OP -
3 3' ty
were checkei for phases, mterohardness, a e. ~e and lattlce.~constant. Micro.~.-_,.
chemical analysis showed that-the ratio of -the-,elements.in' thebeginning of thi
-1 of the middl
ingot was close to that.in the ternary compbund'.IhObTeP Ana,ysis
showed a decrease In indium and an Increase -In-ahtimony. . The ftnal:section con.~~,_
I t ii
ststed of phases corresponding to InSb.and ilso,"InObte3o These data agree w
gd-art~ has: 5:fIqures and 3 tables.
micro and x-ray structural analyses. Orl
zIk1 I.matematIkFAN:MoISSR'( t te~ 'Physics and.
160 U of
ASSOCIATION: lnstitut.fi
I r
Mathematics, AN Mol.
SSR)
ENCL. 00 SUB'CODE: MM -
SUBMITTED*. l3Dec63
-000
2/2 NO REF SOV:. 008 OTHER:

L 12649T65 F4T(M)/WF(b) AFWL/SSD/RAM(a)./ESD(gs)/Eh(t)
RDF/JD/Iffa
ACCESSION NR: AT40445dS S/0000/64/006/000/0143/0152'
AUTHOR: 4olodyan, I.P., Radautsan -mathematical scienc.60',
(Candidate of physico,
TITLE: Solid solutions based on InSb in the system In-Sb-Te
SOURCE: AN MoISSR. Institut fizild I matemattki. -Issledovanlya p0 poIU'pr1DVodnikam;!
novy*ye poluprovodnikovy*ye materWy* (Semiconductor research; new semiconductor
materials). Kishinev, Gos. Izd-voKartyaMoldovenyaske, 1964,.143-152
I solid
-TOPIC TAGS: Indium. antimonide, Indium te luride,: indium semicondu tor, Indium
solution, indium alloy, antimonyalloy. tellurium alloy
A13STRACT: In continuation of earlier work On the (1nSb`,3x(1n2Te3)l_x. and (DiSb)x(1nTe)j_x
sections of the In-Bb-Te system, the authors studied the possible e~dstence of broad
regions of homogeneity near InSb. Ile present paper reports the r6sults of physicochem-
Ical, mechanical and electrical studies on 14 alloys along the (hM)x(InTe)j.x- section With
x varying from 0 to 1. 0. Studies of the lattice structure, debyegram-and izicrohardness
showed homogeneous solid solutions in the range from' x = 1 to x = 0. 85 (ZnS type lattice,
microhardness increasing from 217 to 230), as well as at x = 0. 25 (NaC1 type lattice,
hardness of 12,4); pura rn$b also had a ZnS.type lattice, while pure InTe had a NaCl type
Card 1/2

-5/ESD(t)
L12655-6~ Er-IT(m)/ExP(~)/Ewp(6) IJP( .)/AFtiL/~8b(a
ACCESSION NR: AT4044570 S/6000/64/000/000/011" .163
/0
Radautsan, S. I. . Can d. idato 6 ico- ma th e-matical efeienc es Ne gl;esicul
AUTHOR. f phys
TITLE: Solid solutions of gallium phosphidosulfides
SOURCE: AN M61SSR. Institut flziki i matematiki. rBsledovaniy;t po poluprovodnikani;
novy*ye Poluprovodnikovy*ye mater'ialy* (Semiconductor research; new semiconductor.-,--
materials). Kishinev, Gos. izd-vo Kartya Moldovenyaske, 1964, 158-163
TOPIC TAGS: gallium sulfide, gallium phosphid semiconductor, pse~dobinary alloy
ABSTRACT: In view of th
~u
to
e hTgl-level seinicon u r characteristics of gallium phosphidg
and gallium sulfide, the ( IGaP)3x - (Ga2S3)1-x was selected as the base of solid.
system
solutions in an exploratory study of no Vol semiconductor materials.. The.M9% pure Ole--
ments, vibrationally mixed in various combinations,. were fused in vacuum quartz ampoulop
to produce 12 pseudo-binary alloys represented by the_S-w-P Ga concentration diagram shmm
-An Fig. 1 of the Enclosure. A copper-emission, itcW-filter, RKU-114~ch~mber was used.
for the x-ray and microatiZuctural analyses and a PMT_3 device was used to measure the
e solid.
microhardness in investigations designed to identify the region of the existence of th,
solutions. The study proved a) solubility of Ga2S3 In GaP'within the range of x from 1 0 to
i Card

ACCESSION NR: AP4041365 S/0048/64/028/006/1002/1006
AUMOR: Negreskul . V.V. H!~!autsan,, S. 1.
TITLE: Some properties of gallium phosphide solid solutions rReport, Viird Confe-
.rence on Semiconductor Compounds held in Kishinev 1G to 21 Sep 196V
SOURCE: AN SSSR. Izvestlya. Seriya fizichankaya, v.28, no.6, 1964, 1002-1006
TOPIC TAGS: semiconductorl electric conductivity, Hall constant, solid solution,
photoconductivity, gallium compound
ABSTRACT: The solubility of Ga2S3, Ga2Se3, and Ga2Te3 in GaP was investigated, and
the conductivities, Hall constants, and photoconductivities of GaP and some of.the
GaP-Ga2S3 solid solutions were measured. The materials were produced by fuzing and
vibrating the purified components in evacuated qiiartz ampoules. The sampled were
ground to size with carborundum, and electrical contact was provided by vacuum de-
posited silver films cr spark welded platinum conductors. The system (GaP)3x(Ga2-
S3)1-x formed solid solutions with the zineblende structure for x between'l and 0.3;
Ga2S03 formed solid 'solutions with GaP in all proportions; and Ga2Te3 and Gap provud
to be mutually soluble only when the composition was close to that of one oftthe

ACCLSSION Nit: AP40413G5
compounds. The lattice constants of the solid solutions varied linearly with compo-
sition; that of the sulfide system was 5.45 R for x = 1 (GaP) and 5.32 R for x =
= 0.3. The conductivity and Hall constant of n-type GaP were measured at tempera-
tures f rom 80 to 3000K. The. carrier concentration was 2.2 x 1016 cm-3, and the mo-
'12/V Sec. These values are somewhat less than those reported by D.N.
bility was 90 cr
Nasledov and S.V.Slobodchikov (Fiz.tvordogo tela 4, 2755,1962), but tile temperature
dependence of the mobility, was similar to that found 'by these aLuthors; the mobility
decreasQd rapidly with increasing temperature. Calculations performed with tile the-
ory of D.J.Howarth and E.H.Sondheimer (Proc.Roy.Soc.219A,53,1953) indicated that
most but not all of the scattering was due to polar lattice vibrations. The Hall
constant decreased with increasing temperature -much more rapidly at temIx-,ratures a-
bove 2200K than at lower temperatures. This is ascribed to the presence of two im-
purity levels, the activation energies of which were found to be 0.02G and 0.48 eV.
The room teiaperaturo conductivity of the (GaP)3,(Ga2S3)1-,x solid solutions decrea-qW
rapidly -.1"ith increasing sulfide content from 10-1 (ohm cm)-1 for x = I to 10-10
(olim cm)-l- for %. = 0.3. This is ascribed to the influence of the intrinaic defects
illLrOdUCOd into Lhe lattice by the solute. The activation energy obtained from the
tt'nlp('Irat~iro dependonce of the conductivity increased from 1.02 OV for x 0.8 to
2. Qj.1 7'or x 0.3. '-ctivation energies for the solutions with x between I and 0.6

ACCESSION NR: AP4041365
were obtained from the spectral distribution of the photoconductivity. These were
in good agreement with those obtained from the temperature dependence of the dark
conductivity. Orig.art.has: 6 formulas, 3 figures and I table.
ASSOCIATION: none
SUBMITTED: 00 ENCL: 00
SUB CODE: SS,IC NR REF SGV.- 013 OTHER: 007
Card
3/3

ACUSSION NR: AP4041369
AUMOR: Molodyan, 1. P. ; Radautsan, S. 1.
5/0048/64/028/006/1017/1022
TITLE: Some homogeneous phases of indium antimonide-telluride L'Report, Third Con-
feronce on Semiconductor Compounds held In 1(ishinov 16 to 21 Sep 19G27
SMUCL: AN SSSR. rzvostiya. Soriya fivicheakaya, v.28, no.6, 1964, 1017-1022
TOPIC TAGS: solid :solution, 6emiconductor, indium antimonide, Indium compound
ABSTrUIM The following systeLts were investigated: (!nSb)2,(In2Tc)l-x, (Inslb),-
(InTe),_x, (!nSb)3x(In 2Te3)1_xt (InSb)7,(In,jTc7)1-,,, ar'rJ (In5b),5,(1n2Tc5)l_,. -The r..la-
tc~rial.; were produced by f LISing the elemeats :In a rmanner dc,lcribed elsewhere (5. 1.
Rad- J~ I
I
autsan '11-'d I.P,,',Iol(xlyan,lzv.,Itolcl.filiali AN SSSR No.3 (69) 37,1961j). All these
E;vstcms formed so' Ono for I x 0.85 and nono for-med st~did for
lid F;oluti
0.30 a- x, The all had the US structure 'with a lattice con,tant somewhat
~o:3t; thari that c;f TnSb. The nature of these soluttons is discusscd, it is sug-
je-7ted that Sindl;'V Lirge rcGion.s of solubility may occur In other ;%III-,3V--CVI sys-
t.-mif ~ The systemi. was lnvesti,-ated 1-1 more deLaiI than the others,
ar'] t3ho limdLt Of was .-ftound to occur for x between 0.85 -ad 0-133. The ex-

ACCESSION NR: AP4041368
.istence of the compound In4SbTC3 was established; for x - 0.25 the system formed a
single phase with the NaCl structure, although two phases were present for x = 0.23
and x = 0.27. 7lie condtic tivity, Hall constant, and thermal,cmf of a number of ma-
terials of the (1nSb)X(jriTe)l_x system were mpasured at temperatures from 80 to
6500K. The conductivities and Hall constants of the solid solutions were nearly in-
dependent of temperature, and the thermal emf,,s increased slowly with increasing
temperature. The conduction electron concentration increased sharply from 7 x 1016
cm-3 for x = 1 (InSb) t0'9 x 10-18 cm-3 for x =' 0.999 and remained nearly constant
at that value as x was reduced to 0.80 (there was no marked change in the electri-
cal properties at the appearance of the second phase) . The electron mobility de-
creased somewhat less sharply from approximately 48 000 cm2/V scc for x = I to 1500
cm2/V sec for x = 0.97 and also remained nearly coAstant as x was further decreased.
All the alloys of the (InSb)X(InTe)l-x system with I ~_~ x !? 0.27 were found to ex-
hibit n-type conduction, and those with 0.25 -a- x, p-type. Thus, a transition from
p- to n-tyde conduction can be achieved in these alloys by altering the compositioa.
It The authors express their sincere gratitude to Prof.H.A.Goryunova and Prof.D.N.Na-
slcdov for their great interest in the work and their valuable advice proffered dur-
ing discussions of it, and also to M.U.Markus and L.M.Manovts of the Institute of
Physics and Mathematics of the Academy of Sciences of the Moldavian SSR for their
Card
!2/3

ACCESSION NR; AP4041368
participation in tho oxporimental work." Orig.art has: 4 figures and 2 tables.
ASSOCIATION: none
SUBMITTED: 00
ENCL- 00
SUB CODE: SS, IC NR REF SOV: Oll OTHER: 005

S/0048/64/028/W6/1053/1056
ACCESSION NR: AP4041376
AtMIOR: Derid, O.P.; R"autean, S.Z.; Mirgoradakiy, V.M.; Markus, U.S.
to
TITLE: Phyeical and chemical properties of Dom alloys of the Indim-801001um-
lurium-cadmium system' LKeport, Third Conference on Semiconductor Compounds hold In
le to 21 Sop I
Kishinev 017
SOURCE: AN SSSR. Investlys. Seriya fizichaskaya, v.28, no.6, 1964, 1053-1056
TOPIC TAGS: alloy system, asolconductor property, solid solution, Indium, selenium,6
tellurium, cadmAum
ABSTRACT* Those alloys of the ln-Se-Te-44 system wore investigated, the compost.
-1n2303 Plane
tions of which are reprosented.bry points In tho CdTe-CdSe-In2Te3 of
the tetrahedral diagram between the ln2Te3-ln2Se3 and CdI 2Te4-CAIn 04 traverses.
R 25
Solid solutions were form" over a wide range of composition, as shown by the ohs-';
dad portion of the diagram In Figure I of the Enclosure 01. All those solid solu-
tiono crystallized with the sinablobde structure. The solid solutions with onallcodr,
m1un content exhibited superstructure lines characteristic of InST63; those with
large cadmium content (except the solutions very close in composition to Cdln2Se4
G&M 1A

J
ACCESSICK M: AF4041376
were ordersd similarly to Cd%T~4; and the soII4 solutions wi Intermediate c
th ad
m6ma content formed disordeFed crystals. The solid solutions with compositions
and (Cd1n2Te* )X(Cdlftge4)]L-x were Investigated In.more detail.
4
than the others. Llquldus and solldus curves are,given for these system. an
d the
lattice constant was found *to Ydry smoothly with composition in accord with V~gixdv
law In both systamo. The electric conductivity Of the (ln2T*3)z,(InOO3)1.ix-801utlolw
Increased by a factor AM as.x decreased from I to 0.93 and decreased to approxi-
metely Its value for InXT63 an z decreased to 0.60. The temperature depindence of
the conductivity WeS that characterlstIc of sandconductors. It In suggested that
formation of solid. solutions by simultaneous Iso- and bateravalent substitutiant:,
i should be possIble'alto Is other complex semiconductor systems. "The authors e39-
Pro" their &WP grstltadoto, Protessor'N.A.Goryumova for her groat Int"It in
and for walmablo :adft6o - Waffired *during discussions at It, and also to R.A. I,,,
31661yeahD at the Instift" Cd Aysi~s W
aid Mathematics of the Acada 'qJr Selowes mill
IPjjI~&.*.Lje:
I aw Moldswum M for bar. jortla wmfts*.-- (WIgeartehase
r
h,
LZ

77
L 24653-65
ACOMSION NRs AP500704
ionic imblatt
types, The formation of vacancies in either ciii6iiie or. an
'in solid solutions is the most-likely mechanism"of crystallization.
Ecr V
Large solid- solubility regions near the A component were -also--
observed in the indium-arsenic-telluriwn system (in the -0-56 mol % InTe
range), and in the 4ndium-arsenic-selenium. and aluminum-antimony-tellurium
systems.. Recently, the possibility of dissolving 10 at'% tellurium in InAs was
-discovered. The mechanism of solid dissolution of sixth-group elements in.
1AMRV compounds is explained. An at .tem
p~to synthesize Ga4SbTe3, 1n4AsTe
or 1n4SbSe3produced only oomplex mixtures of binary compounds and elements,,_.,
Formation of large coiiior6tii--s*ol-id:,solubii4i,---
regions by hkii6i-alent s
tion is also considered possible in otherterhary or more compjeX~ systems,
near compounds of the OBVI typed and in ter diamond-!7type structures
..Tary
'Chemical, microchemical, an~~hy~icochemicalanalyticdtniethi6di---~i,-,-il~:.~.~
W --an ith
ere developed for determination of components in the indiuim t ony -J,*
telluriIum and,gallium- osph. us-sulfur systems The'. p&6 I
;ph or, w ar ogra ic
method Is considered especially convenient f6i t4f-+Iv' eh micai jj~
quandtaftv6 ch
of thin se M*iconductor films deposited- on a the',)rqkdhin6ki
I t 0
j

L 61065-65 IJP(c) RD;I/JD
JG
ACCESSION NR: AP5017939 G 0030 65/010/00~/0037/0043
AUTHOR: Nasledov, D. N. Negreskul,: V. V. RadLu!~ani S. Slbbodchikov, S. V.
TITLE: The scattering mechanism of current: carriers of tellurium-doped gallium
A
phosphide
SOURCE: Physica status solidi, v. 10, no. 1 1965, 37-43
TOPIC TAGS: gallium phosphide, tellurium doped semiconductor,. Hall effect, semi-:
conductor conductivity, semiconductor thmperatureeffect, electron mobility, current
carrier scattering
ABSTRACT: The Hall coefficient and specific conductivity were determined on single
r
I n-type tellurium-doped gallium Ohosphide crystals in the 77 - 600K tempe afure range to
establish the temperature-dependence of.these values and to gain further.insight Into the
mechanism of carrier scattering. The temperature-dependence.of the electrical conduc-
thrity in typical erystals is shown in Figure 1 of the Enclosure; the temper ature-depend-
ence of the Hall coefficient, in Figure 2 of the Enclosure. On the basis of the experi-
mental data, the relation between electron niobility'and.temperature was determined..
Typical results are presented In Figure 3 of the Enclosure. The main determini g factor
in the scattering mechanism Is scattering on,optical photons (polar scattering); however,
I Card 1/5

"1965~5
J ACCESSION NR: AP6017939
in the low end of the te investigated and In instances where the crysta i
mperature range
- uch-as spa e charge, also bed significant.
is grossly contaminated, other factors,8 C ome
The temperature-dependeince of the Hall effect suggests a donor level with an Ionization
energy of approximately 0. 11 eledron-Volt. Orig. art. has: 4 figures and 7 formulas,
ASSOCIATION: Physikalisch-Technisches Institut der Akademie der Wissenschaften der -
UdSSR (Institute of Physics and Technology, Academy of Sciences,SSSR); Institut fur
Angewanrlte Physik der Akademie der Wissenschaften der -Moldauischen SSR (Institute of
1 Applied Physics, Academy of Sciences,_ Moldavian SS4); Polyt~chnisches Institut, Kishi-'
I nev-2olytechnical Institute)
SUBMITTED:. 17Mar65 ENCL; 03 SUB CODE; SS) E
NO RE F SOV: 001 OTHER:_ 011

~ eleetticaLconductivity in GaP.

--L-61965-65
-------
ACCIESMON NR: AP5017939
ENCL-. 02

L 1412 EWT(l)/DR(m)/3&(t)/Ee(b) IJP(c) JD/AT
ACC NR: Ap6ooo883 SOURCE CODE: -UR/0181/65/oo7/ol2/3671/36
V. V.; Radautsan, S. I
.AUTHORS: Nasledov, D. N.; Negreskul
Slobodchikov" S. V.
ORG: Physicotechnical Institute Im. A. F. Ioffe AN SSSR Leningrad
(Fizfk_o-_f_e-khnicheskiy institut AN SSSR); Institute of Ap ed
Physics AN MSSR,, Kishinev (Institut prikladnoy fiziki AN MSSR)
.TITLE: Oscillations of photoconductivity in GaP
3671-367
'SOURCE: Fizika tverdogo tela, v. 7, no. 12 1965, 3
fTOPIC TAGS: 'gallium compound, photoconductivity, phonon interaction, 1~
.energy band structure, carrier density
21t qVI 5- 5'-
ABSTRACT: This is a(~ontinuation of earlier work (FTT v. 6, 1781,
:1964) on the photoconductivity spectrum and the band structure of
.GaP. In th _aTion, the authors studied GaP samples
.obtained by gas-transport reactions and doped with tellurium, in the
Card 1/2

L 14126-66
ACC NR: Ap6ooo883.
14 -3
,form of tribedral needles. The carrier density was -v6 x 10 cm at
296K. The measurements were made at 80 and 296K. Both tempera
tures,,
speaks of photoconductivity were observed at approximately 44 and 51
nm, and In addition, regular oscillations were observed at wavelengths'!
lower than 0.40 ~L, attributed to strong interactions between the non- i
equilibrium caririers and longitudinal optical pbonons. The results
bare qualitatively interpreted from the point of view of the band
.structure of GaP. 'The complicated nature of this band structure makeg
,a quantitative analysis difficult. The reason why the oscillations
were not observed at room temperature is that the over-all photo-
onse decreases with increa3ing temperature, owing to the intensi-'~
.resp
fication of thermal capture, reduction in the diffusion length of
.the electrons and increased rate of surface recombination. The
relative roles of the direct and indireettransitions are estimated.
:Authors thank G. Ye. Pikus and I. N. Yassiyevich,for help in dis-
.cussing tne results. Orig. art. has; 2 fl-gures
'sUB CODE: 20/ SUBM DATE: o6jui65/ ORIG REF: 002/ OTH REF: 005
Card 2/2
7.

L ~Q296-6 E'
qT(m)/T/EViP(t)/ET1 IJP,(c) JD
ACC -NR:-A!6017491-
AUTHORSt Derid, 0. F.; Radautsm, So I*
IVI
UTLEs Frum diagram of alloys in the system %!eD
ADURC11 Hof. sh. Metallurgiya, Abe. 1119
W SOUICKs Sb. Materialy dokl. 2-y Mauchno-takhn. konforenteli Kiskinmk,
_njU&ko~Lia-ta. Kishinevo 19659 68-69
TOPIC TAGSv indium, tellurium, selenium,, indium containing alloy# tellurium
containing alloy,, selenium containing alloy, alloy phase diagram
ABSTRACTs Methods of microscopic, x-ray, and thermal analysis, as ell as m&mLre-
ments of aLicrohardness, were used to study and construct the phase "ran for a
pzeudobinary section of 1n2To3 1"3 in the systen of In4le-To, The dependence
of So solubility in %T43 on the temperature w" ascortained,'and the ordered statq
of defeats In the solid oblutions based on %T'93 was determined. Z. Rogschovskaqa.~*~
Jranslatioa at abstreog
SUB CODA$ U
C"d 1/1 -f-" VMv 6WA701IT1776.017

IF-14'T IC,/GG
ACC NP: AR6025i_51 SOURCE CODE: I
AUUIOR: 1)rshkJn, S. L.; Radautsan, S. I.
0
L.LTLE: Influence of certain technological factors on the quality of gall am J~hosphid.
crystals grown from a melt p6lution
SOURCE: Ref. zh. Fizika, IIA619
HF SOURCE: Sb. S ozium. Protsessy sinteza i rosta kristallov i plenok poluprovod-
nil-. rri,~r-rialov, 1965. Tezisy dokl. Novosibirsk, 1965, 30-31
TOPIC TAGS: frrLlium compound, phosphide, single crystal :Lngj temperature depend-,
. tice, cr,~stal ..islocation I
Al'~jITACT: The Audy of the growth of GaP_ELngLe c~:~ ~ta3,~ from the melt solution with
apparatus which makes it possible to regul e the tempeFaltbre with accuracy �0-5C in
the temperature interval 50 - 1500C has shown that when the regulation accuracy is
increased the quality of the single crystal is appreciably improved. The crystals
obtained have iiighly perfect cleavage planes, low dislocation density, and dimensions
that are 2 - 3 U'imes larger than for crystals obtained under analogous conditions,
but with a r%,ilation accuracy �5*. The percentage of large crystals relative to the
total number c.l. obtained crystals-is greatly increased. The crystals reach 25 mm in.
Sity 103 Cff-2. (Translation of abstract]
length and ha-vF-. a dislocation den
SUB CODE: 20

SOURCS CODE: U
ACC Nk; R/0275/66/000/006/B,313/BO13
?-jshkin, S. L.; Radautsan, S. 1.
TITLE: Effect of some processing factors upon the quality of GaP single
crystals c.-ro-.n from a solution-melt
SG~qZCE- Ref. zh. -Elektronika i yeye primeneniya, Abs. O'B87
REF SOU~-CE'; Sb. 3~,-,,:Dozium. Protsessy sinteza i rosta kristallov I plenok
poluprovodnik. mazerialov, 1965. TeZ7 aokl. Novosibirsk, 1965, 30-31
lu ga-lium srwu, jingle ci~ystal grow 9
_~3KRACT: The efl"ect of accuracy of -furnace er at ure cantrol, crystal annealing
various med-__~, and other processing factors upon the physical properties of
Ls was in
~;ro ucod c.-,,s'6a- vesti-ated. With a temperature-control accuracy ofI 0-5C,
wlthin 50-5G&C, batter crystals were produced than with an accuracy of :t 5C.
The crys-.als were up to 25 mm long and had a dislocation density of 1000 per =2. i.B,-
ranslatlon of abstract]
T
~120
rd i/i UD,: 621.315:592:548.552:546.1810

ACC NR-. AP6019284 SOUR CE CODE GE/ 0030/66/0 l-5--/-002-/K-1-05-/Ki-087
AUTHOR: Zhitar, V.; Oksman, Ya.; Radautsan, S.; Smirnov, V.
ORG: Institute of Applied Phyaics, Academy of SciencesMSSR#, Kishinev Polytechnical
Institute
TITU: Some photodielectric and luminescent properties of new semiconducting single
crystals of the Zn31n2SG phase
SOURCE: Physica status solidi, v. 15, no. 2, 1966, K105-KI08
OPIC TAGS: semiconductor single crystal, semiconductor conductivity, luminescent
crystal, sulfile, indium compound, zinc sulfide, photoelectric property, forbidden
zone wi0th, photoconductivity
ABSTRACT: Basic differences are shown to exist between the properties of Zn31n2S6
crystals and those of ZnIn2S3. Earlier studies of this new semiconductor phase of the
~nS-InIS3 system have been reported by the authors Mv. Akad. llm& AISSR, 2, 9,
(1965)5. The photodielectric and luminescent properties of the crystals were studi-
ed in order to determine the width of the forbidden zone and the position of extrinsic
levels. The width of the forbidden zone (2.76-2.82 ev) determined by the photodielec-
tric method agr-eed with measurements made by optical absorption methods. The optical
quenching spectrum of the photoconductivity and the spectral distribution of the pho-
Card 1/2

ACC NIR: LP6019284
taluminescence were also measured at tem~peratures of 2950K and 770K. Quenching maximi
occurred at 604 and 550 nm and photoluminescence maxima at 1.83 and 2.06 ev. Orig.
art. has: 3 figures.
SUB CODE: 20,11/ SUBM DATE: 25Apr66/ ORIG REF: 008/ OTH REF: 002
Card

ACC NR:
AP7001973 SOURCE CODE: GE/0030/66/018100210677/0682
AUTHOR: Molodyan, 1. P. ; Nasledov, D. N. ; Sidorov, V. G. ; Radautsan, S. I.
ORG: [Nasledov; Sidorov] A. F. Ioffe Physicotechnical Institute, Academy of
Sciences, USSR, Leningrad; [Molodyan) Institute of Applied Physics, Academy of
Sciences of the Moldavian SSR, Kishinev; [Radautsan] Kishinev Polytechnical
Institute
TITLE! The effective mass of electrons in (InSb)x - (InTe)l-x Crystals
SOURCE: Physica status solidi, v. 18, no. 2, 1966, 677-682.
TOPIC TAGS: mixed crystal, indium compound, indium antimonide, indium
telluride, (efMqFv-eUlectron)mass AY--4-,
ABSTRACT: The paper deals with changes in the band structure due to transition
from doped InSb to its solid solutions with InTe and analyze the variation of the
electron effective mass in (InSl), - (InTe),-x with composition (x), concentra-
tion of electrons, and temperature. Based on the measurements of the thermo-
electric power, transverse Nernst-Ettinghausen effect, conductivity, and Hall
effect, the concentration and temperature dependence of the electron effective
.~-rd _ 1

-4CC-'NR,-
AP7001973
mass m* were calculated for crystals of the solid solution (Insb)XC[nTe)l-x
(for x = 1 to 0. 85) in the temperature range 100 to 370K. Solid solutions having
x > 0. 99 (1) behave like InSb doped with tellurium, and crystals of this type
having electron concentrations (n) greater than 2 x 1018cm-3 show an m* (n)
dependence which differs from that predicted by Kane. Solid solutions with
x 0. 99CII) show a different temperature dependence of m* from those with'
x > 0. 99. The authors thank 0. V. Emelyanenko for his useful discussions.
Orig. art. has: 5 figures, 4 formulas and 2 tables. [Based on authors'
abstract] (DWI
SUB CODE: 20/SUBM DATE: 09Sep66/ORIG REF: 00710TH REF: 011/
2/2

KHRISHCHENOIUCH,, kh.; RADAVIC1fflJq,-.&j2adav-icius, E. ]; KALININ, I.;
A.; -FT
RYCHKOV., K [PIZ;dmaa, R.1; IL'IN' V.
Increase the scope of aftficiency work in financial orgams.'Pln.
SSSR~37 no.1:62--68 Ta 163. (MMA 16:2)
1. Predsedatell komisaii po ratsionalizatorskim predlozhenl5am
Ministerstva finansov Belorusskoy SSSR (for Khrishchenovich
2. Preds-edatell komissii po ratsionalizatorskim predlozheniyam
Miniaterstre, finansov Litovskoy SSR (for Radavichyus). 3. Predse-
datell komiesii po ratsionalizatorksim predlozheniyam Teningrad-
skogo oUastnogo finznsovogo otdala (for Kalinin). I.. Predsedatell
kanisaii po ratsio-nalizatorskim predlozheniyam Tomakogo oblastnogo
finameovogo otdela (for Rychkov). 5. Predsedatell komissii po
ratsionalizatorskim predlozheniyam Ministerstva finansov Estonskoy
SSR (for Myandmaa). 6. Predsedatell komissii po ratsionalizatoskim
predlozheniyam p3A 14inisterstve finanscm Chuvaahskoy ASSR (for
n1in). (Finance) (Suggesti6n systems)

RADAY, Odon
An account of an expedition to South rhina. Term tud kozl 5 no.2:
87-88 F 161.

RADAY, -0.- .
Light under water. Nauka i zhyttia 12 no.5:49-51 My 162.
(YJ-RA 15:7)
(Photography, Submarine)

VLASOV, S.N.. laureat LeninBkoy premii; DRUISM, A.V., kandidat takhniche-
okikh nauk; RADAYEV. K.V., kandidat takhnicheakikh nauk.
Take into consideration the characteristics of industrial pro-
duction in automatizing the course of production, Mashinostroitell
no.7:-17-21 J'l '57. (MIR& 10:8)
(Automatic control) (Assembly-line methods)

RADAYA-7, M-V-, kand.tekhn.nauk
Additional hidden potentials in machinsr7 plants.
Mashinostroitell no-3:45-" mr 16o. (MMk 13:6)
(Machinez7 industry)

SOV/ 137-58-7-14033
Translation from: Referativnyy zhurnal, Metalluroiya, 1958, Nr 7, p7 IUSSR)
0 N
AUTHORS: Abrarrio-,-, N. , Radayev, V. , Abralmov, D.
- ---------- - -__' " -
TITLE: Complex Utilization of the Ores of the Aktyuz Deposit (Kompleks-
noye ispoll zovaniye rud Aktyuzskogo mestorozhdeniya)
1 C3
PERIODICAL- Prom. Kirgizii, 1957, Nr 2-3, pp 11-15
ABSTRACT: A brief description is provided ci the work of scientific re-
search institutions toward complex utilization of the ores of this
deposit. The 1948-1955 ore-dressing flowsheet, flowsheets for
f lotation-and- gravitational production of Sn concentrate, Mo
middlings,and a concentrate containing "R" are presented.
A. S h.
2. Scientffic.-
Card I,/[

,WIW-.I)ZYANOV, H.B., zasl,izhennyy vrach HSFSR; NAUMTSFVA, A.G.; -LAPA)(~V,
V.P.; IVAINOV, YU.M.
Defects of posture and scoliosis. Crrtop., travm. i protez, 26
no.2:74 F 165. (MIRA 18:5)
1. Adres avtorcv- Kilybyshev (obl.), Polevaya ulitsa, dom 80,
Bollnitsa imeni Pirogova.

slivyefnoy p-orr.-qt;i" proin-stv. Nc E.
1:7 7,).

RADAYI-I'V41, 1. A.. ;-Iar~ t t! r Apr ic F) c i (d is c) - - "f h (-- -~ 1 1-,,2 c t o I s i j n f Ir cake and
corn silage in the rations of cows on the quality of dried miLk". Moscow, 1958.
L7 pp (,,-Ioscow Order of Lenin Agric Acad im K. A. Tirniryaz(!v), 110 copies (KL, No 7,
1959, 127)

RA,DAY-EVA, I-k-,w1aduhiy nauchny7 sotrudnik
flow sunflower seed meal and corn silage in cattle rations affect
the quality of dried inilk. Izv.TSKhA no.2:101-108 '59.
(MIRA 12:8)
(Corn(maize)) (Sunflower seed) (Milk. Dried)

V.11.,inzh.
Setting up rows of underpinnings. Flit' i put.khoz. n0.1:33
&L 159. (MIRA 12:2)
(Railroad bridges--Kaintenance and repair)

11 /;,,' i ~ ; " : : ./ ~ 1/ 1 It f''
LAPSA. A.M.. agronom; RADAYICVA, Z.M., agronom.
-
Hundred centners of pork per hundred hectares. Nauka i pered. op. v
sallkhoz. 7 no.10:15-17 0 157. (MLRA 10:11)
(Swine--Feeding and feeding stuffs)

RAD,ATI4A,o&*6, nauchny.,,, sotrudnik; ROMANOVICH, Ye.F., red.; DEYEVA,
V.M., tekhn.red.
(Advanced animal husbandry of Baltic StateaJ Peredovoe v
zhivotnavodstve Pribaltiki. Sost. Z.H.Radaeva. Moskva,
Gos.izd-vo sallkhoz.lit-ry. 1959. 214 p. (MIRA 12:9)
1. Latviyskiy nauchno-iseledovatel'skiy institut gidrotek1miki
i melioratsii.
(Baltic States--Stock and stockbreeding)

RAIRYEVA, Z.. agronom
All the work on the farm is mechanized. Ifauka i pered.op.v sel'-
khoz. 9 no.1:54-5? Ja '59. (MIRA 13:3)
(Farm mechanization)

RADAYEVA, Z., nauchnyy sotradnik
When machinery is in skilled hands. MR-ka i Dered. op. v sellkhoz
9 no.10:12-16 0 159 (MIRA 13:3)
1. Iatviyskiy nauchno-Issledovatal'skiy institut gidrotekhniki i
melioratsii.
(Agricultural machinery)

Z.1-1.; %'OLoE:",G--, K.Ltra:.slator]; GULiA~", V., red.
[Specialization and development of dairy husb,-.ndry on the
state farms of the Latvian S.S.P.] Fiena lopkopibas spe-
cializacija un attistiba Latvijas PSR padomju saimpiecibas.
Riga, Latvijns Valsts izd-ba, 1963. 143 1). [In Latvian]
(V 1,-a 17: 6)

Z' A,
137-58-5-9456
Tr~jnslation from: Referativnyy zhurnal, Metallurgiya, 1958, Nr 5, p 92 (USSR)
AUTHORS: Mitrenin, B.P., Lalykin, S.P., Savrasov, Yu.P.,
Radaykin, L. K.
TITLE: Employment of Floating-zone Refining to Produce Single
Crystals of Silicon (Primeneniye bestigel'noy zonnoy plavki
dlya polucheniya monokristallov kremniya)
PERIODICAL: V sb.: Vopr. metallurgii i fiz. poluprovodnikov. Moscow, AN
SSSR, 1957, pp 35-40
ABSTRACT: The melts were made in an apparatus consisting of a vertical
quartz tube (d--22 mm) in which a Si bar was placed vertically on
two pins rotating at I to 50 rpm. The inductor (d=25 mrn, height
4-6 mm) creating the zone was fed from a 5-kv generator work-
ing at 4 mc. The rate of motion of the bar relative to the inductor
was 0.5-10 cm/hr. A vacuum of the order of 1-10-5 mrn Hg was
created in the quartz tube. The specimen was heated to 7000C by
current passing through it. Elongated bars 15-20 cm long and
10- 13 mm in cross section, and specimens of Si iodide in the
form of tubes 8- 16 mm. in diameter, filled with pieces of Si, were
Card 1/2 used for the melts. The quartz tube was replaced after 3 to 5

137-58-5-9456
Employment of Floating-zone (cont)
passes due to the growth within it of a film that screened the field. When an
asbestos cylinder rv5 cm long was mounted on the tube for purposes of heat
insulation.in the vicinity of the inductor, checking and crumbling of the film
diminished. The course of the melt was followed visually after the firstpass
and thereafter by instruments. *Single crystals were obtained from the super-
heated zone after 4 to 7 passes when the rate of motion of the zone was 3-6
cm/hr. The employment of single-crystal seeding and rotation of the speci-
men facilitates production of single crystals. It was established that 6 to 8
passe5 of the zone make it possible to purify acid-washed Si until it is Spec-
trally pure for 60-80% of the total length of the specimen, but the resistivity
of the specimen rises little as this occurs, viz. , from 0.05 to 0.08 ohm/Cm.
Floating zone refining of a s~pecimen of Si with introduction of Ta 182 into the
final zone makes it possible to purify the specimen of Ta to 10-5-10-8% after
I to 7 passes of the zone. The Ta is concentrated in the final portion of the
bar. The concentration of Fe59 after the first pass drops to 1o-4%., and the
Fe is concentrated in the final zone. Si iodide yielded single crystals that
were chiefly of the p type and had a resistivity of 15-40 ohm/Cm.
1. Single crystals--Growth 2. Single crystals--ResiL3.ivi-Gj Yu.Sh.
3. Silicon iodide--Applications 4. Tantalum isotopes (Radioactive)--Applications
5' Iron isotopes (Radi-oactive)--Applications
C. rd 2/?

S/063/6 2/007/005/005/006
A057/A126
AUTHORS: Kovyrzina, K.A., Radaykina, L.A., Baroni, Ye.Ye.
TITLE: Synthesis of 5-stilbenyl-1,3-cliphenyl-,L~;--pirazoline
PERIODICAL: Zhurnal vsesoyuznogo khimicheskogo obshchestva imeni D.I. Mendeleyeva,
v. 7, no. 5, 1962, 592 - 5~3
TEXT: A method for the synthesis of 5-stilbenyl-1,3-diphenyl- i~L-pirazoline
(II) from n-3-[I-phenylpropenone-(I)]-stilbene (I) is described. The investiga-
tion was carried out in order to synthesize a new luminescent heterocyclic compound
with high efficiency as an admixture to plastic scintillators, having a pronounced
fluorescence in the range of about 4,500A . Compound (I) is.prepared by condensa-
tion of stilbenaldehyde with ace!tophenone: 1.6 ig stilbenaldehyde is dissolved in
110 ml alcohol, 1.8 g acetophenone and I ml 10% NaOH added, the turbid solution
left to stand at room temperature for two days, and afterwards the precipitated
(I) is filtered off, washed, dried, and recrystallized with acetone. The final
product (II) is prepared by dissolving 4.2 g (I) in 700 ml of an alcohol/benzene
mixture (6.: 1), subsequent addition of 2.1 ml freshly distilled phenylhydrazine,
2.1 ml conc, HCl.and the condeqs~ation is carried out at 90 - 950C during 28 h
Card 1/2

S/06)/62/W7/GO5/005/006
Synthesis of j-stilbenyl-l,)-dio~enyl ... 1A057/Ai26
under stirring. After washing of the precipitate and recry'stallization, (II) is
obtained with a 96,14 yield showlnl'g an absorption spectrum In dioxane (C 10-3
1. [1
mole/1) with % max. 3, 100 A =-OP400; A max. 3P6001 20,992.
ASSOCIATION: Fiziko-tekhnicheskiy institut AN GruzSSR (Phypico-Technical Institute
AS GruzSSR)
SUBMITM: January 25, 1962
Card 2/2

_L 473a-~66 FN-", 1')/V.T(m)/T/EWP(Q/ET1 IJ~(c) WW/JD/JG
Att NK.'
AR602576 SOURCE CODE: UR/0058/66/ooo/oo4/AO76/AO76
AUTHOR: Zhitarl, V. F.; Goryunova, N. A.; Radaytean, S. I.
TITLE: Growth of single crystals om the gas phase in the zinc-indium-sulfur
system . I~r
SOURCE: Ref. zh. Fizika, Abs. 4A638
REF. SOURCE: Sb. Simpozium. Protsessy sinteza i rosta kristallov i plenok
poluprovodnik. materialov, 1965. Tezisy dokl. Novosibirsk, 1965, 9-10
TOPIC TAGS: single crystal growing, zinc containing alloy, indium containing alloy,
sulfide, antimonide, uniaxial crystal, transport phenomenon
ABSTRACT: Conditions are developed for obtaining single crystal plates of the chemi-
cal compounds ZnIn 2S4(1) and Zn2Sb(II) by the method of gas-transport reactions using
iodine as the carrier. The maximum dimensions of the obtained plates are 18 x 12 =i
for I and 12 x 7 mm for II at n. 0.1 mm thickness. The investigated ternary sulfi4s,
and also their initial binary compounds, could be obtained by combip~lhg the synthesis
reaction and the single-crystal growth reaction from the_gAj_phase.1('To this end,
initial elements of high degree of purity were used in a specified stoichiometric:.-ra-
tio. Crystals of compound II are optically uniaxial and have photoelectric propertiel
The possibility of applying the method of chemical transport reactions for doping I
Card 1/2

L 47339-66
CC ~R, AR6025762
and II with Cu and Ag is investigated. [Translation of abstract).
SUB CODE: 20
pb
C d 2/2

WM1'j1L1/Zor;para8itolr,Gy- Pam3itic Protozoa. G
Abs Jour: Ref Zhur-Diol., N-:; 17, 1958, 7691o.
Author Ciuca, M.; 1Ladazovici,-E_-; Chelarescu, M.;
Atanasiu, Y, - Isf&~-'T.-- *Constantinescu, P.; Teriteanu, E.;
Gima, I.; Scarlat, M.; Constantinescu, G.; Tautu, L.
Inst
Title Study of Duration of Infestation of Plasnodium vivax,
Plaamcdium falciparum and Plasmodium mlariae (Preli-
rAnary Report) -
OriG Pub: Dul. atiint. See. ried., 1956, 8, No 2, 549-564.
Abstract: Observations of natural infection were conducted on
105 patients (97 - with Pl. vivax, 7 - with Pl.
falciparum and one - with Pl. mlariae), and with
experimentally-induced malaria ir. 73 patients (40
with F1. vivax, 32 - with Pl. falciparum and one
Card 1/P
Card 2/2

RADBA, Rudolf
Defects of telephone devices for carrying current Z8, FAO and KKM.
Zel dop tech 9 no.9:280-281 161.
(Telephone)

RADBA . R.
Operational experience VitI4 dispatching connections equipped with
inductive selection. Zel dop tech 10 no.7:211-212 162.

J0207
S/08 61/000/019/033/065
13.-5100 B110XB138
AUTHORS: Aleksandrov, Yu. A-, Radbill, B. A,, Shushunov, V. A.
TITLE: Oxidation of organometallic compounds. 4. Oxidation of
hexaethyl ditin with cx.7gen
PERIODICAL: Referativnyy zhurnal, Khimiya, no. 19, 1961, 145, abstract
19Zh45 (Tr. po khimi-i JL khim. tekhnol- (Gor;kiy), no. 3,
1960, 388-393)
TEXT: The oxidation of hexaethyl ditin (I) with oxygen (II) in n-nonane
solution at concentrations of I ranging from 10 to 100 mole% has been
studied. The oxidation rate of I is described by a first-order equation
according to the concentration of I, and is independent of the pressure
of II within the range of 300-500 mm Hg~ In the temperature range of
60-900C, E(act.) is 19.5 kcal/mole. 0.55 mole of diethyl stannic oxide,
0.62 mole of triethyl stannic oxide, and 0.12 mole of acetaldehyde are
formed per mole of oxidized I. Water was found qualitatively. The
oxidation of I is not catalyzed by addiTion of 13.2 mole% of triethyl
lead oxide. Addition of 2,6-di-tert-butyl-4-methyl Dhenol lowers the
Card 112

30207
S'/081/61/000/019/033/085
oxidation of organometallic.- B110/B138
reaction rate to approximately one-tenth, which is indicative of a chain
mechanism of the reaction: [Abstracter's note: ComDIete translation.]
Card 2/2

I-J-n -1
,~~lz '/ ,
TUROVA, A.~. ~p'r)ofessor; RADBILI, 0.0., kandidat maditainakikh nauk
lt'~~i~----_-'
Cardiovalen. Sov. mod. 18 no.10:38 0 154. (MI-HA 7:11)
(CARDIOVASCULAR DISEASES. therapy,,
mixture of various drugs cardlovalen)

T I S
Had,, 1 0. "Eat.nnal rxi t,,;-- prc)blerr, of' endlo;~enwus A-
h.yT:ovitQjTijnc,siS,11 Trudy in-ta uzovers.-enst-
vnvalliys vrach~--y im. Vol. 11, 1949 (on covf!r: 1948),
U- Y06) 21 La,,, 1'3, (L(Aopis 'Zhumal 'llyki-, St;lteY, No. 17, 1)49).

O.S. and CO~?DOITJ) o.L.
"Influence of Vauotoav on the Course of Peptic Ulcer and on Gastric Function."
fTerap. Arkh.7 22, No. 1 70 -77, ina.- Feb., 1950. 1 ffLg.
Nine patients were followed up for 7 to 30 manths after vagotomy. Neutral gastrion was
diminisned, but humoral secretion was normal., except that tne gastric juice s.Wded low
acidity. Defective emptying of the stomach may cause stagnation, even after 21 years.
2
Diarrhoea was cantion. In general tho results of vagotomy corresponded to these obtained
w*Lth experimental animals.
Jeffrey Boss
Abstacts of World MedicLne. Vol. 8 1950.

RA-DBILI, O.S.
-
Therapeutic diet in Peptic ulcer following gastroenterostomy and resections.
Feldsher & akush. no.2:37-44 Feb 51. (CLML 20:8)
1. Candidate Medical Sciences.