SCIENTIFIC ABSTRACT DASHEVSKIY, L.N. - DASHEVSKIY, M. YA

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000509720016-1
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 25, 2000
• Sequence Number: 16
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

DASHWSKIY. L. N.
WMW-
Characteristics of the behavior of dynamic systesis near the
limits of stability, Sbor.trud. Inst. elektrotekh.AN URSR
no.13:35-41 156. (XLRA 9:10)
(Iftectric power distribution)

"Design of S@mmstrical Flip-Flops for Nuinum Reliability."
;c The author explaIns the design procedure and derives and d1scusses the
necessary formalas. Technical data are provided. There are 6 referewos,, of
vhiab 4 are English and 2 Soviet.
Voproxy vynoblslitel'noy matematiki I tekhalki (problems In Computor Jktbomatics
*c and Technique) Kiev,, Isd-vo, AN Ukr SM,, 195B.- 97 pp. (Sbornik tradov, YyP 3)
This collection of articles issued.by the computor Center of Ukr SO Aced
Sol. is intended f or scientists and engineers in the field of computor matbamstics
and techniques. The collection to devoted to the 1prograning of mathematical
problem on electronic computers and to the design of wits end components of
these machines.

DASEEEVM=, L. N. and IMAIIP 36 Bs
"A Variant of the Standard Forallel-Action Arithmetic Unit."
The authors describe a variant of a standard arithmetic unito vhich they
reccomend for use in electronic automation systems vbere basic arithmetical and log-
ical operations corresponding to certain established requirements must be per-
formed. According to the authors this variant system provides features of
universalityp simplicity of the logical system, reliability, high ape", and low
purchase cost. There are 8 references, of Which 7 are Soviet and I Oerman.
Vorprosy v"Ohislitellnoy matematiki i tekhniki (Problems In Computor 14athematics and
Teabinique) Kiev,, Isd-ro AN Ukr SSR, 1958.. 97 rp. (Sbornik trudav,, vYP. 3)
This collection of articles# insured by the Computor Center of Mr 80 Aced
Sci in intended for scientists and engineers in the field of computor mathemsticsi
teabniques. The collection is devoted to the 'programing of mthematical Vroblemis
electronic computers and to the design of units and components of theme machines.

_ _:., 81662
16,680o S111216010001051101023
Translation from: Referativnyy zhurnal. Elaktrotekhnika. 1960, No. 5, P. 323,
@# 4.4320
AUTHOIRS- Dashevskiy, L. N-, Pogrebinskiy, S. B
TITLFt: On one-Urcui of a Standard Parallel Arithmetic Unit
PERIODICAL- Sb. tr.,Vvchial. teentra. AN UkrSSR. 1958, No. 3, PP. 32-44
TEM, A detailed description is given of logical and structural circuits
of standard parallel arithmetic units. It is presumed that the developed standard
units will be employed extensively in a number of electronic automation systems.
The follovrng requirements had to be considered when designing the standard units:
universal jl,., *,y in performing arithmetic and logical operations, simplicity of the
logical c1rouits, reliability, high-speed action, low costs. The following points
were taken as fundamental parameters and characteristics of arithmetic elements:
binary computing system, fixed point, word length of 16-20 digits, 300 kc
synohroniz:Lng pulse frequency for the tube variant, 300 ke for the junction
transistor variant. The basic element of arithmetic units is the flip-flop
(see figuni), distinguishing itself by the absence of a differentiating circuit
Card 1/3

63j662
S/112/60/000/05/10/023
On one Circuit of a Standard Parallel Arithmetic Unit
In Ut on the carry forming channel. The transition of-the
p
flip-flop to a now state is effected with the aid of
gating circuits (C , C ) and the start pulse. The
ts ;;4 co
C gating o1rcui -Atrolled by potential outputs
of the flip-flop in such a way that the start pulse
can pass one of the inputs only. In order to obtain a
steady start, the input pulse should be shorter than
the transient process time of the very flip-flop.
P The circuits P represent logical "or" gates.with the.
aid of which the flip-flop returns to the zero state or
Y @-', L@Y'
Y"i" Y"on a recording of 1 is effected. The authors show and
describe the logical circuits of the register and the
adder. A juculiarity of the adder is the addition of numbers in two cycles and the
absence of itemory elements. The authors investigate the general circuit diagrams
of arithmeti-a units and also the structural circuit diagram of one digit of the
aritkunetio init. The suggested circuits ensure the execution of basic dperations
and possess the following special features: a) for multiplication and*division
operations, shift and addition are effected in different registers, which makes
Card 2/3

8IM2
SAIV60/000/05/10/023
On one Circuii of a Standard Parallel Arithmetic Unit
it possible t: combine these actions and to reduce the overall time; b) there
are no shifts in the adder, which ensures an increase in operating frequency;
c) the absen:e of memory elements. An 8-digit model of an arithmetic unit with
an operating !requenvy of 200 ko has been developed, it performs 20,000 multipli-
oation operat:t)ns per second. Static flip-flops with 6H1Tr (6NlP) tubes and Pulse
- potential "tx7" gaten are used in the model. One digit of the unit contains
8 tubes, 40 d:))des and 22 pulse flip-flops. The authors briefly describe the
principles of tionstruotion of a single-program control machine. There are 8
figures and 8 ;-eferences.
B. I. Z.
Card 3/3

@ -1 DASHAVSKIT, L*HG
Designing symmetrio triggers with consideration of maximim
reliability, Sb or. trud.Vych. t sent ra AN LJRM no.3:55-70 158.
. (MIRL 12:2)
(Electronic calculating machines)

S11 03/60/021/06/11 /016
BOI 2/BO54
AUTHORS: Glushkovp V. M.,-Daohevskiy, L. S.,-Nikitin, A. I. (Kiyev)
TITLE: Utilization of Electron Computers for the Automatic A f
the Bessemer Process
PERIODICAL: Avtomatika i telemokhanikat 19609 Vole 219 No. 6,
pp. 877 - 883
TEXT: The authors describe the automation of the control and regulation
of the Bessemer process achieved after long experimental investigations
which were carried out by the Dneprodzerzhinekiy veoherniy metallurgiche-
skiy institut (Dneprodzerzhinsk Evening Institute of Metallurgy) and
the zavod im. Dzerzhinskogo (Works imeni Dzerzhinekiy). The latter two
establishments investigated the available nonautomatic oontrollingmeth-
,ode of the Bessemer process# and worked out now methods suitable for
automation on the basis of high-speed electron computers. A system hah
to be worked out by which it is possible to interrupt the blowing of
rail steel at a carbon content of 0.48 - 0-58@. In consideration of the
burning rate of carbon of 0,007 - 0-008% per secondt the instant of
Card 1/2.

-Utilization of Electron Computers for the S/103/60/021/06/11/016
Automation of the Bessemer Process B012/BO54
converter tipping must be predicted with an accuracy of + 5 seconds.
The authors describe the methods of determining this instant used on
the,basis of theoretical and practical investigations. This instant is
predicted on the basis of information received with the use of methods
of mathematical statisticso 'The information received by all methods for
the determination of the instant is taken into account. Work for the
automation of the Bessemer process was performed in two stages: First,,
the information apparatus was designed, mounted, and taken into opera-
tion at the Works imeni Dzerzhinskiyj it was automatically connected
with the transmitters# and automatically started and stoppe41 in the
second stage, a digital control machine was developed. This recording
digital apparatus was worked out by the Vychislitelinyy teentr AN USSR
(computation Center of the AS UkrSSR). It is described, and its mode
of operation is explained. The authors describe the operation condi-
tions of this plant, and its construction and principal elements. It
was installed at the Works imeni Dzershinakiy in March 1960. At present,
the data obtained from this plant are being evaluated mathematically
together with the data of chemical analyses, and a program for the con-
trolling machine is set up. There are 2 figures.
Card 2/2

/00
AUTHORS,-
TITL,E,@
SOURM,
j:> A 5 ilV
3520h
S/696/61/002/000/002/009
D299/0302
Dashtyslkyy, L,N4 -, Pohrebins1kyyO S.B. and Shkabara, K.O.
BasiL diagram and dee-ign princtples of the d,.g;tal Computer
1?KYyiv11
Akademiya nault Ukrayinallkoyl RSR. ObehyslyuvalInyy tatntr.,
Zbfrnyk prald z obchyslyuvallnoyi matematyky i tekliniky,
v. 2, 1961, 8-44
TEXT: The digital tomputer '1Kyy1Y",- designed at the Computation Center
of tht Academy of Sciences of ths UkrRSR, is a general-purposs machin4v
of @' nterm*d-iats speed. In designing'the computerj particular atVention
was giYSV, t9 high rsliability, simplicity of logical circuits, tompaet.-
ntvs and Pimpli0ty in handItag It; sufficient speed and flexibility 'AD
solying various typeis of probleme w4re also provided for. The opera-
iional prtn4ipl* of thj tomput+r is asyniMirooeus-, its various unitf ar@-.
autonamouvi each operating at OA opt-@mal frequency. The autovqmow;
worklk.ng of the %rarious unito makes -,t jjassibls@ to @irry )w thf, t#,qtr.4f4
Card(D./-;

S/696/61/002/000/002/009
Basic diagr-am and design ... D299/D302
operations in parallelq and not in aerie-a. Such an indspendent 6yatsm
of operation of the various un;ta haa the following advantages; The
4anne*tion between the tznits-in simplified; each unit is Independent and
can be sasily ch&4c:ked and repaired; this facilitates the plant maniifa.--
turt of the units. The unita are Integrated and can ba replaced indi-
vidually w,-Lth#u* na,@seziltating rtconstruc-tion of -the 4.ntir* computer;
theriiby it baeomas possible to de*igit modified versions of the computero
having diff*rent fa&tnesa and storIng, @capacity. The main countl -ng and-
j
*anti-ol %14m6nt 6f the *cmputer to the iiymmetrical flip.-flop of triods
Aypt GJI.7,r (6NIP). The zounters operate by means of logical ellemtnfs
wbi-ch ara controlltri by tha.anode -voltage of the fl.itp-flope, this ensuirea
rtliability of aperationo The vgntral systim is based on the voltag@-
puloi me,thod, whey,*by Po aom* of tho Lnputs of th* Xogiial r1emonto th4
t#_q'Lr*1 VOItAge& aK'.S appZi%d, and to tho othtm-* the pu'Aeb &Ignalsv ThA
prinelpal lag_@tal +Iaw6nt it a died#-tranxfo3,msr pulat"voltagh devics.
Ths limiting operating frequonov ut the prin-.,:@pal unita is 500-600 kc.-A
thos amplifiets and the blocktrig gtnoratota have a frailutnoy of 500 kc.,
Car d 2-1/3

5/696/61/002/000/002/009
Basic diagram and design ee. D299/D302
at a pulse duration of 0,25-0.35 microseconds. The flip-flops were re-
liable to within 10%. The average speed of performing three-address
operations was 5000-8000 op/sec; addition took 8 microsec., multiplication
-200 microsec.; (these are minimum figures). With group operations,
the speed of the computer does not decrease. The basic diagram of the
computer is shown; its main units are the arithmetical unit,'the internal-
and external memory units, the control unit and the input- and output
units. The operation of the computer is described. The various units
are coordinated by the control system. The principal control desk regu-
late& the current supply, the start and stop of the computer;
it controltpossible failures and facilitates the formulation.of the prob-
lems to be solved. The computer has a total of 2bout 2300 tubes. It
consumes..25 kw and occupies a,total area of 70 m . There in It figure.
Card 3/3

8/044/6Z/000/009/0 W 069
AO60/AOO0
-)do 0
AUTHOR: DashevslkiY, L.N.
------------
TITLEt On the problem of improving the reliability of electronic com-.
puters
PERIODICAL. Referativnyy zhurnal, Matematika, no. 5,.1962, 60, abstract M79
("Zb. prats' z obchysl. matem. i tekhn." T. 2. Kyiv, AN URSR,
1961,.87 9.5; Ukrainian; *Russian summary)
TEXT: Some considerations are cited relating to the improvement of the
reliability of electronic computers. -Main attention is drawn to raising the
reliability,of components by a sufficiently rigorous calculation'of their pa-
rameters. The methods of analyzing certain cQmpoAents (inverters, cathode fol-
lo'wers) for maximum reliability are set forth. A general @riterion is formu-
lated for the reliability of circuiU with voltage coupling, characterizing the
limiting admissible deviations of the circuit parameters from the nominal val-
Ves under the condition of retaining the operating sche@ules within the bounda-
ries of-the linear segments of the characteristics. Examples are given or cal-
-ard 1/2

$/044/62/OW/00/065/069
On the problemof Improving the reliability of ;AO601AOOO
culations and the graphs forithe dependence of generalized reliability coeffi-
cients on thweircuit parameters.
-Authors'summary
(Abstra:cteris note:. Completatranplation]
Card 2/2
P ml

6/044/62/000/010/041/042
B158/2102
AUTHORS: Pogrebinalkiyt S. B.t Shkabarat X. 0.
TITLE: Structure scheme and basic constructional principles 'of a
"Kiyev" automatic digital.device
-PERIODICAL: Referativnyy shurnal. Matematikat no. io, 1962, 66-67,
abstract 1OV355 (Zb. prate' z obohidl. matem. i tekhn. Y. 2.
Kiyev, AN USSRp 196it 8-15 (Uk;r..; summary in Russ.1)
TEXT: The "Kiyev" automatic digital device designed at the Vychislitellnyy
tsentr AN USSR (computer center of AS VkrSSR) is a-universal mean velocity
machine for solving a wide range of wathematicail problems. The machine is
constructed on the asynchronous principle with-the individual components
autonomized and operating at optimum frequency, which can easily be brought
up to date by replacing one or more of these. The work of the individual
components is coordinated by a control system provided@with starter devices
which generate impulses to control information processing on receipt of Sig-
nals from,the components concerned indicating that they have'complated the
procesaiiig of information preyiously accepted by them: Pulse-potential
Card 1/2

S/044/62/000/010/041/042
Structure scheme and basic...,.,. B15,81BI02
logic schemes# based on the.:uge of diode-transformoF elements with a common.
magnetic conductori are used. The machine is built into five separate,
cabinets. A small system ofiifting tackle was used for erection.
[Abstracter's note:. Complet.s'.tranalation.]

KOPYTOV2 V.P., doktor tekbn. nauk, otv. red.; VESEIDV, V.V.,
kand. khim. nauk., red.; YERINOV, A.Ye., kand. tekhn. nauko
red.; TISHCHENKOp A.T.., kand, tekhn. nauk, red.; DASIMSKIY,
L V kand tekhn. nauk, red.; CREGLIKOV, A.T., kafid-.'tdkbh.
--naey:- d "SIGAL, I.7a,, kand. tekhn. nauk, red.;
., re
SEMMOVSKAYAl F.T.) kand. tekhn. nauk, red.; YEREMMKO, A.S.,
kand. tekhn. nauko red.; DYBAN, Ye.P., kand. tekhn. rmuk.. red.;
FEDOROV, V.I., kand. tekbn, naukj red.; POLISKIY, N.I., kand.
fiz.-mat. nauk., red.
[Transactions of the Second Heat Engineering Conference of
Young Research Workers) Trudy vtorci teplotekhnicheskoi kon-
ferentsii m-olodykh issledovatelei. Kiev, Izd-vo AN USSR 1963.
278 p. (MIRA 17:61
1. Teplotekhnicheskaya konferentsiya molodykh issledovateley..
2p 1963. 2. Chlen-korrespondent AN Ukr.W
.- (for Kopytov).

EWT
ACOESSION Mt W0066149 BOM EXPTDITkTION S/
Da3ha% Ski mituNt 4-0-1VICandidate- of TeIch-,dcal Sciences); P-qZr&bAnskIj:p
Ift" *15n @en ginear)j Shkabara, IFP@q
@rkk A1ekseygvT)%_
,,..ndidate of Technica. Sciences)
Mle "Fiev- computer- design and ippUcation (Vychislitellnaya mashina "Kiyev"j
prc-yekttrovaniynPi ekspluatasiya), Kiev, Izd--vo I'Tekhnika-, 1964, 322 P.
:LU..ua.p biblio, 4#600 copies. printed.
TOPM TAGS: computer technoloVs digital computer KM'V
IMMSE AND COVERAGEt This book C onected the experionce in the design and use
of the asynchrous universal digital computer "Kiev", The principles of its
construction and structure eireviU7. the method of performing contr)l and
,xi onentLq . and
. -tIrretic operation-sp and the schematics of the elcm@nts, comp
@,a!A-. units of the computer are described. The book inciLdes the 7--thods of
-a,:.-'-ating and investigati-ag the reliability of a d@Zitai ccTniter .nd
prob*LEMS of organizing the use of large electronic digital --o.-,cutars. The book
I.Or - - - Ft,-,djn,,s in the
.'s i-ended engi-neers, researchers, 5tuQlant.;5
l'ield of computer technology- and cybarneticq ard for specialist.s interested
in the development and use of compater and control equiFment,
.Card

L -W09-66- -
ACC NA t APft6369
Fig. .1. 1 pivoted me)
2 barA of vanej -3 -'plata;
bypase'tube*

Origo, art-0 has sI diagiWals
SM DATSt 12Fob65w:

@-l 7

;-ACC NRs. AP6036065
CODE: UR/0432/66/000/005/0041/0943
AUTHOR: Dashe k4y-J-.&. (Candidate of technical sciences); Pleskonosq A. K.;
Lazarke_vrr.T,""1_.A. -,--M4idved ev, R. 9,
IORG: none
!TITLE; Multiple point device in a system for the digital registration of parameters
SOURCE; Mekhanizatsiya I avtomatizatsiya upravleniya, no. 5, 1966v 41-43
TOPIC TAGS: computer Anput unit, computer research, analog digital conversion
!'ABSTRACT: A breadboard.model of a system for thedigital recording of parameters, in-
cluding single and multiple point secondary 'devices, is briefly described4 The multi-
,ple point devices do not.have a continuous time relationship between the sliding ale-
'ment of the'rheochord and the value of'the parameter. The correspondence between the
Ivol-tage picked up from the rheochord and the variable parameter occurs when the car-
i
Xiage is lowered on the chart paper'of the device. A block diagram of the system is
Wesented and discussed. Orig. art. has: 3 figures.'
:SUB CODE: 09/ SUBM DATE% none
UDC: 681.14 62-50

MOYLM, V.,lnzh.; MON, S..Insh.; DOWSKIT. M--inzh-
I @ .1- --.
going machinery in erecting a blast furnace. Stroltell no.12: -
13 3) 158. (MA 32: 1)
(Blast furnmen)

DAM"Say p M.
Construction pf a cold-rolling mill, Prop, q@roie i insh. ooor, 5 no.2&
3-7 Y4-Ap 163. (MIM .16s4)
1. Nachalfni@Jponetakogo otdota Ukrainakogo gosudarotvennoeo proyektnogo
instituta po poyektirovaniyu, iseledovanlyu i iapypanIi*-eta1Iqykh
konstruktoiy i"Mostov.
(Zhdanov-Rolling mills-Design and construction)

JASMBLUP M.
laeountIng has ban RW+sed, Fln,SSSR P no*262-63 F 163
(JaRA 1612;
1. GjavW bukhgalter upravleniya goeudaristyennykb trudavykh
aberegatelZt ka i goarpdarstvannogo kredita Moldavakoy SSR.
ld vi&j go bm* -Accounting)
(Machinoe:IL"Counl"Ing)

usSR/Physical Chemistry Kinetics) Combustion, Explosions, B-9
Topochemistry, Catalysis.
Abs Jour : Referat Zhur - Xhimiya, No 1, 1958, 498
Author : A.M. Rubinshteyn, M.I. Dashevskiy, N.A. Pribytkova.
A--------- ----- - --
Inst : Academy of Sciences of USSR.
Title : Application of Method of Ultrathin Sections to Electronic
Microscopy of Catalysts.
Orig Pub : Izv- AN SSSR- Otd khim. n., 1957,-Ro 4, 431-435
Abstract : The authors polymerize specimens in a mixture of methyl-
and butylmethacrylates (1 : 3) and make sections less
than 0.01,4t thick with a special2y constructed micro-
tome from blocks prepared in the above manner. These
sections are used for electron-microscopic study of
highly dispersed catalysts.
Card l'I

DASHM=,X.I.-
UND-5 ultramiorotom. Priroda 51 no.5slQ4p-lO7 My 162
(;M1585)
1. InBtitut organichookoy kbimii im, N.D.Zelinakogo AN SWRp
Hookya, -
(Microtome)

PECHKOVSKAYA, K.A.; FAVLOVAI I.F.; SII-7YAYr-,VA.. O.A.; PASHI@@
Use of electron microscopy for evaluating the distribution of
carbon black in rubber compounds, Zav.lab, 29 no.8:968-970
,63. (111RA 16:9)
1. Dauchno-isoledovatelinkiy institut shinnoy promyshlennosti.
(Rubber) (Carbon black) (Electron microscopy)

11.5 131R/Chernia try Rubber Dutadlene Rubter 30P/ Get 1,8
"Structure and Properties of Filled Rubber YIxtures: III, Mixtures of
Sodium Butadiene Rubber With Channel Black," B. DoEadkinq D. Pechkovskaya,
h. Dashevskiy, Sci Res Inst of Tire Ind, 12 pp
"Kolloid Zhur" Vol X, Vo 5
Ukhtinskiy channel black as a filler for sodium butadiene rubber was
examined in concentrations of less than 20, 20 - 40% in relation t,) amount
of rubber. Found that in concentration of 20 - 4C". of the black, st@uctural
arrangements were effected (threads and small cbains). TIMs did not occur
for lower concentrati,.@ns; In concentrati.Dna of 40 and ab.-.)ve, surplus
black did n-)t form additional structural groups b,it was merely dis,?ersed
between ther.-i. Rubrax and sulfur retarded process, but mercaptobenzothiazole
accentuated it. Stearic acid had no noticeable effect. In all degrees of
concentration of channel black, rubber remained a continuous-phase system.
Submitted 3 Jan 48.
FA 2/50T59

AUTHORt Dauhavskiyj M.I.
TITLEt The UMD-5 ultramicrotome
PERIODICAL: Priroda, no- 5, 1962, 104-107
TEXT: The YMA -5 (UMD-5) ultramicrotomo, designed and produced at
the Institut organicheskoy khimii im. N.D. Zelinskogo Akademii nauk SSSR
(Institute of Organic Chenistry im. N.D. Zelinokiy Academy of Sciences
USSR), is intended for obtaining ultrathin (50 - 860 A) and thin ('/,;&)
sections of various substances, including polymers, catalysts and soft min-
erals for subsequent examination under an electron microscope. It has a
rocking sample-holder and thermal feed of the sample towards the cutter.
Microphotographe made with the aid of the ultramicrotome are included.
There are 3 figures.
'ASSOCIATIONs Institut organicheskoy khimii im. N.D. Zelibskogo AN SSSR
(Moskva)(Institute of Organic Chemistry im. N.D.Zelinakiy -of
the AS USSR rMoecowD
Card 1/1
Q

1. 13702-66 EI@T(d
f ACC NR. AP6023669
(v)/EW?(k)/EWP(h)/EWP(1) IJP(c)
SOURCE CODEt UR/0103/6(
AUTHOR-. Dasheyeldy, M. L. (Nonow); Liptser, R. Sh, (Moscow)
.................
ORG: none
TITLE: 01mulation of stochastic differenlial equations onnected with the problem of
"disharmony" on an analog computer
SOURCE: Avtomatika I telemekhanika, no. 4, 19669 142-150
.60 7f
TOPIC TAGS: random noise aiVW, analog computer, computer application, stochastic
I eon, sipal detection, sipmd r
proc #*a separation
ABSTRACT: The article deals *th the problem of sipal detection against a background of
noise and the problem ofco@i@f%p the basis of incomplete data, A proper device for, the
realization of the linear and nonlinear stochantio differential equations, to which this problem
has been largely reduced in recent times, might be it continuous -acting analog compWter opsr-@.
ating in real time and receiving a signal-noise mixture. The diMoulties of a purely mathe-
matical nature which an encountered In the simulation of such equations an pointed out and
methods for their elimination suggested. Methods for the simulation of controlled dittasion-
bW Markovian processes are proposed, and the results of the simulation of a random proce"..
Card 1/3 UDC: 621.391.161:661.142.33

L 43709-66
ACC NRs AP6023669 0
involving the I'disharmcey" problem a" discussed. A process n wMah is Ow am d 60
useful signal &W "white" Gaussian noise, to observed. The uefk signal is a USAURIM -
proofiss with two states 0 and 1. for which a transition in possible at a rwAom Moment of t;me
a only from state 0 to state 1; I.e.9 the random process satisfies the stochastic ditterm"
equation
dqt
where
0 9 < 0,
X(t - 0)
t > 0'
Et Is the Wiener process, MA& @ 0. D,&fg At.
In addition, it to known that the random quantity e has the following a priori distrOmUon
P(O > gle > 0) =to-U, P(O =' 0)
Here w and x are known constants.
The problem to to establish, for a given probability of false alarm w - P( v 0).
A basic expression for -the simulation is derived and a schematic for its realization is present-
ed, along with a table awnmarizing the simulation results for 100 trajectories under different
conditions. It is shown that, by virtue of their high operational speed, analog computers can
expand considerably the possibility of the practical use of statistical methods for signal deteo-
tion against a baftrowyl of noise, The accuracy of the results obtained in this manner will
be of the same order ati in the Intei;ration of ordinary differential equations. The authors ex-
press their 1;ratitude to A. N. Shirygev for his formulation of the problem and discussion of
the results. OrIg. art. has: 30 formulas, 3 figures, 'ind I table.
SUB CODEt 09/ SUBM DAM IS8ep65/ ORIG RZFt 004/ OTH RZF: 001
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0
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not. A, 1. K11`111VA-410V AND 0
cl a-Call.0011 Wills 13 WA16.
e furtlisi bydraly!@ to pyro-
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he dwo. Ow-d- a' dw
jw ay*. armittre. The ix;
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t ct by Imliag gro
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9'u
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rhic"Imtki In Ogg. solvents In Shec"m oms
A
I. . witim"It asks with th. catalysts 1. 44,
I
000 Frond Al. Contrary tolallistdand Pay"gre
000 Hi (cf. C. A - V, 4W4) 1 with 2 mob. of Cl In AcOH and sk.
111 at 8D. in elm preftme of I And othw catalysts givits not
%@htbstno (U), but a mixt. of cliloricles,
OOu @jj !!%4
(M). A
Yield of 110% It (.M% front corn. 1). ro. M-b* (W.I. was
011116111"1 Withoot N CSIAly-t (t,"n I in 1; fwlo..( Iwill"I
A% air. wilh III cur.. 0'. With 2.ft W. .1 C
ft
there wric forni'd M% fit. rn@ 1910 711'. and .."W It.
trkhkwt@vnaIvhlIwnr. m. I"Pt ?W. " prutachlemsts-
scerimplithene6 in. IM I#*. 0iWation of Ill with Crl(h to
AcOlf yielded 4,A-dichloronsphthafic acid, challifirIS at
194* to the anhydride. in. 2K5*. and 4.5-dirbloroact-
ersequinone, m. Owl'. The work lq bring eon-
Cho.. Illaor
So ILA IdTALLURGAM. LllltiklWf tt&$WKATICN t4- -.t.Z=-
t #410doo .48, laof off VJASOIODS
a ad I a 6 1 me a 9 do 4 0 W
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. * -Vr-v@ I f * 0 0 0 0 a 0
*oil 141?tt I? 111''IMH r 11,"'T so it a IF a 61 a a
*@ to
smo I"* dwivadv" so Offtsphthm"W"". U.
A. P. Karialils, &W 0. S. MIWWlm.
--Or! JL!.R.) 24% JOID-24 1947)(in Rim- -00
@--41 60 cc. *0 0
;"Cowd. wWtfei@#ed=W6 cc. HNOS -00
W IA-IJ) aud 13 cc. emd. HiM, then booed an *00
stem bult I hr.; after - amd pow In, bito ice water,
the ddW am go ma= bn Men md tk tit,
e"*d. to $lve IJ 5. a-sew"j-dif
00 COW64 mi. IW? 11 r ACOH); Oita remted crysm.
10.20 P,
00 Ir 0 W-L" b W PbNOj. Men AcOH. poody sol.
004 in U a" 6;fmi k Imm a liom' "'i" m. 2111D- goo
dow in
20 (%a AeOH . Whom Ow above =1 .0
cc. comd. H" whig 7.5 ce. flbl@ (d. IA) OW 10
90 1 23 comM. JfA%. thate was obtained, ter beathis I hr., V 0
Ia, poodws an mod wuhWg with 11#0 and hot r
HtOH. 43 g. a wh dkek
00 11. 'Or deriv.. which on ayrta. from roe
1)7 pm
001, 0!! 270-7' (mm decimpo.). Stmaller mints.
*0 of HNOj or HoM had to lown ykNo. The pmduct
lik=3dramm), mabove 400%
It 1=1 & 110*o
mW04 cc. AcOll hollied I hr. pvc 2.1 g. of the
JfJW&&4A4tIAyiAwym#A"k tuid, to
-frav mN (by 1110 tevotommot of the He salt) ot. 196* (from
AcOll)j- d=m-). k mL In HsO &ad ZtOH. Ion sol.
in AeO I 'A : adds. of BaCls to dw odd in usta goo
gave a as A*. Ag!" a Al sob (no data).
)ftol - __ ____ ___ see
4.6 J.
co or =p1m,
ni
267-49 (from A H = lates. pd. In
phMe. Poorly sol. in El I lCilaillsol. too
u It it
0 so 0 xf to it fA st it x fs ff it a Wor ft I to
lo 0 40
i IOA
Ion S-606 0 0 Ill 9 0 0 0 0'* 0 6@4 OA a olo o o 0 0 0 of 0 0 a 0 0.0 0 0 0 If 0

Mtvs
@ nT
4,
so-itia flobbietatti dedfoil sk W CHU" tw mbf an stindmis tivarilot, Iptl* it.
At. W hmift,willif. To 4 hi Milne
Of Ill, In
mi. CCI, wat.-i4rd 67 mt. wills, "@I;
S.S.S.R. 1. 030- n 1 0- fig., Wi(otyMe of a,6-navit- pf/hlf@ ragid Uptako, elf firoccurml
thene (Btunittithil, Be.,. 1. 1OW(1874)l is nimmi 0 Ill, 11 it, tet24 hr$.
(CA. 6.7. kniat*tromontcRapAthe'le, in. It21-13, (ftfull Qfj, .1W
oxiiijud with
Notle of tht'Wribrutideit reported by De-Vati (CA. It. 222-l". The ;tn Iromwt I g') in C4114 wal tna", VA._
2W) and Mayer atid Wautmatin (CA. 14. 27.1w) COUPI Im I r".
hot "n. of 0. 5. KOH In I 1"t. ataill WWI heottcl bt"r
duptIcated. To IfYJ g. ini-paitileA if: 114 MI. Ykidi"t 1.5 a. rim"I't
W, or CIICII wis adivi With cooling 120 fill. Pr In 70 fill. nl, I"_3W*' Which ocidim] "ith N"Cri(h to jht "Jjtj:@'4'.
CC4 or CI(C[.-,;: subt. ;J,-cur3 anti later an abund4nt lipta, 6-tribromonaillithafic atid. Pure It. Ill. 162,31 !'Intt it
begns. Mter ro!veral hr%. there tit; obtained IM-2W is- cif'. with decomplij, tOW,3 2 Of AtOnAlt With flat A:. koft
coloti"s product, inkod, pwritit- ritut heraliturno detivs. it and 3 fir. atoms with aft. AIII40,; sixidizoi with N.-t.Crtth
SIL-arlycy-allitolicirtinns, it yfelds j*r*mawpAiAaj,*r a4 Q, in. 319-20'. If III) r.) In
Irl larxj- "'M MI, L-tellfrig ovemight; " C. .11;0 mi. C.1f, treated With IS C. Koff Ill 3y) lilt. Ittolf -and
I crystallitM oitt, whilt coucti. tif the filtrate pvv 70-M C. reduted 43 min. ctve 14 g. omnite product. h1catifieJ Al
4 5,9 (11). Pure 1. 4,5,04ribitimovexapkiky(one, m. 182,1* (f.%n CJ0.
decomp, 1')F'P t'freirti C.H.), heated with KI cl-- I which oxidlired with NatCrM trU-,
note Ur gnd :1 ritoIcs I-111r; ale. AgNO, elea ves 4 Be aturnsi-im. 200' (I'mal AcO), Which dec-Atboxylated as detm1wc, I
while PIc, K014 cleavcs 3 Br atims. 091dation'Of 20 V. above to in. 70' (frorm MI)II).
with W 1. Nxi(YO, In 20O.M. AcOff 3 hirl. at reffUll CAV6 Refluting I Ws AcOff 44 mitt e abqut 11, 11 to
4.9 C. 44ramoiiaphtlialk arid, in. 2IR-20'. identical with actintillitherte In 90 mi. W LPCC41r was =1113.1 911"ile III
the alldition product of To V 1. 30 min. and tit-! tabit. 4" 0octing gave 3.1; C. Yellow prAuct;
If. I I n 4 09 a " Stiffs. of to C., 3 milt. wil Ii! IUS 9.
Po ml. hot C'Us was added @ thk (I C.) In 23 mi. C411* Wilt heated I
tit too ti-J. RtOIJ anti the tnixt. was toiled 0.5 hr. to; Koff fit 23 mi. R(OH rieldirtit 0.47 9 fect, kil. 131.5-
tvi: 8 g. ,4J,1.ri4rdmvat_-saphAjW,6Ro, m. 1,115-3.0" (Ito"I i 2.50, Identified Thus th:
ilt), which addi j khtofetical arnount of Be required for I -main product of twomination at aemaphthe"e tindtr ^Okfj-
M
dcuible bbnd. .0vidillrAj of ibis with N2,CrrO? In AcOll I tiomi VIVe a bY It. and K. 6 " the mater6i r1iji,tird br
hr. at reflux )".Vc 2, dew!, in. 222--3*., thain bf;_ bromide), but It. wbkb on sopm. yicols. not a
V4 Cf) It ond it-) Vin anhydride- tattler than the
Zid ;.Yttfid 5.2'g. ftf%b 111110 ijk 30 mt.-- -
3 3 be$. tit W-1110, theft 3 hr$. rit.
.=ieukIjb&3,bfv. Inconod. HCI, pv%0.6 it, 1.4,6p' @:J
Ir Foomwilo.1i 14G-1a. To 8.1 6, 4'64bco-
was:vd 1. Is mt
jpsf@ In th
4

_J,
2
to
-4
Sonia polp-Jillorii of Fi6iiViAllunit 111 @JW- a- MOR at rOUX Piro 1.15 9, 2,4J-UUU 04PA-
WN-15-d-Tim(y Oiersk-lxd@ 'Irisg tbt a ydrt@;C
of 30 @`tt'46 fill. Wit with 1-5@ in- . M-21". This heated in an stitwEiVC With Hf@) ar(I
Molat. CI prtallvd sith 41i) tilwitvol. Of sch, 11ith Looll'st. If,()(, tin. Iat =-100, timn nAixtd vplth 4-tacd. 1103 hit.
iklioxy6s Ott mixt. to sianil c@vern@zht w14 filpfij)g the 14. ipvt ItNtr sttam disin. 0.8 g. in,
J@o@il,d gtka after wit%hi'll. titith Atoll Find XtjO 0-9.4" Orom MOM. Tiewtatcrit of 2 it. I fit CCI, %--ith
nbout '10 g. 01h)rIllatloll ;knta. the thetAink-al amt. of C1 over 3 bro. p%,.- I s, 2.4,5,9.J0-.
produal c(tiniating ot
11CX11000tf) (1'CJ`jVS. It the chivrimainri h i un lit Ott prcwrc* dewcup. 1571 (fron CJ1.), %%!1irh
'If 2`@@ it)4!i;&, the W%a-CA deriv. pmcioi)iinotes, while IV th@! (I g.) rauitbi 6 yisto. Ulib 0,36 S. I"oll in 0 MI. atoti 'Xild
Jirk'n@uc(- (if 270 reCL Ijilt sx@lt.-%-Ct 11'.-I IV. is preilimi-1114VI, *1 Int. Calfe'rvit 0.76 1. cmitsit
@Ikpii. of tht 2 6woers i; diflicidt. Iv,m .'Aylelse, in. 2 6-17*, w ilo 0XIdation of (fit peutzt-d dKriw.
MIXI@j or C.11, Odds 3eniv cty!itxU of ilic heu@Cl dff.@V, wlll@ NazCr^ ;n AcOH save
with fi@it and I;a lit zi pLi,lit of the penta-Cl tit, '319-1-Al". The 2tut protinct of chlositation th mce-
des-iv., illiti a(fordNi; a ine(KA for mrxh. sipn licuoig suiphthtne I%
ii VCided, owilig to pit5,iti4! &4i,tliprt. Tlintswits olli,- (11), 6@Lvmp. 2W-511 Which lotc[ 3 Cl Attgus with 41C.
tailml I.:. M - 1,044),im - 1,13, IlidD AgNO., irldir lit u1c. KOH. 2 atoms of -11 are rlt.tiiil.
Acyl?, decomp. 150'. which, tilitit he%1;d with Oil,laffia yidds 4.5-dieki6roitapAtWic ac4, in. 321--b'
3 Cl i(quis, willie .1 CI Wouilk tire leltioved itt ale- (from Ac.OJ. Reflu Kitts lAd 9. It lit Ill mi. CM. with fi!J %.
AKNOj. itt25 rul. BID)( 15 min. pare 0.8 S. 49-414V 3,5-10-
flux gm,v R polyincr und a low yidd of in. 165' (frorn CJli), which stadlir
"Cid, in. 321-W, 'A 1101 tlettgCd With 1190 tit H,O fit aft atlt07 Adili Ur, to Its double bond. Oxid:ttWn of thii; %%fill Na,
C13ve #J his. to 210' ifilve u viotict-Atc. )h.-14 of 4,:LJichlorio- Cr,O--As-C)II gave Si-dick1.v@m&4dio; sv@,;d tit. 173-4*-
Wit @!,zl 'At@0), detarboxylittlan yields
utittigite tvitli 1,4@3 11121irial Walisl4d Ill. WJ (from Atoll). WWA164 with Kuno, of
prelid, Qtifflatly . froat 4.s Wilell 1,1S. $%sid 3,S-4Iid&ronaphth3IJc acids yiellit 4- stud - 5-
)iAled the pli-sitict. ul. W. The heim-CIderly. (69.), In ciderahenti4trIlWir txidr. onp. 34, Kosokipaff
W 1;11. Cilf, irfluxill O's hr. Aith 3.8 g, KOH Ill 60 mi.,
R(Off yii-MM 2.0 g. ilk ne (1). in.
192-4* Nrude). Fit. 'V-S' (ow-g), which readC, atlx6 Or to';--,-
W.4
444 t@-'
7
WR

RA�HEIVSKIY-., M. M... and PLTRENKO, G. P.
On Some Polychloro Derivatives of Acenaphthene. II, page 638. Sbornik state7
po obsh-.hey khimii (Collection of Papers on General Chemistry)j Vol 1.
Mbscow-Leningrad@ 195% pages 762-766.
Odessa Polytechnic InBt.

q-r
T; W

7:@
p
Ub 6
Athorg i 10a g4i p

7 tle a
4`5 d1ich@oro@@hene, and its oxidation Product

Nriodleal Jjkr 23. 3i-.;3704372@ 'iq@3

__Abstr"t2 @H!
n"S

inta-4
hdV`jwth6d'-:, th 9 4f 4 chloroacenaph ene-
r&na htfi tc. a@dd' tat'h'a--yield 83% is briefly'
d se ed.-';It,. 0'.
e
rib
'

,
.
pr!oven~.t"cpi)rimeiht-ally-,that'~th4 'chlorination of.acdnaphthene.wit~h
iiLtui~i-i
chlorido I ft the:.presence,of'an:ajuminum chloride catalyst yields up-to 73%'.
*
:of 4s 5-dict dorokcenOhtfiene' :
Plus M'Wll amounts of monochloroac.enaphthene
and tarif.; @;It`-*vis established*that the yield of 4.,5-dichloros~d~ti~phi-,bme.~.

izione' Pt. th@ theoreti Usm f
U :d not: ek6eeC 52% of cal. Four re erencop

I934-19521-o
?
-InAltitution
MW
Sutidited..
ahuary.19,
1955

----------
fivs. wcn
the
sul"V. (it VWir
10 we, rxpd. hv. f.'acti(mal
rqp.wt"
hv@t_14A -wit fLuMA. to
14
firce. C, a ful 1 LIU b@
if. ux0atiou of
cu
f". 'ri5 7". In "XI-fift,'o it,, ri-mg %ilich 6 frcv! d( ILAIV@j
Ps ittLicLA, if t@ pr,@,at ia b, vi ilugs n4rallba)k
."'er 4
toftll'olifima el rcsj."A It, C0.11 dAilj:_,t3pfK:4 c4af-a!,
iruf Wit Tinni-A-ItAi
1@ Gaji chms"

17
M, P- rN T-
@r w; e Q nm
It,

@
j
j

i
@
_

_
_
7
& sy
m
.A
ftesnl@o mllz
7
E@
955. P4,. 2 Liz&
_ALw cl"raCIA-tXS Of
Lr-
L$s
I ave elr_dy b.@en
sTccL
studv
t Chi-

5.(3)
AUTHORSt Daebevskiyy X. X., Potrenkat 0. P. BOT/75-14-3-26/29
TITLE: quantitative Determination of
opredelen4e ateenaftilona)
PEPIODICALt zhurnal analitioheskoy khimiiv
pi, 375-377 OSSR)
Acenaphthylene (Kolichestvennoye
19599 Vol 14, Nr 3,
ABUTRICT: The authors investigated several methods which are based
sither on the unsatitrated constitution of the acenaphthyleine
or on its intense yellow coloration without having obtained
satisfactory results. Finally a gr4vimetric method was
found which In characterized by the fact that acenaphthylone
forma a sparingly soluble polymer under the influence of
strong acids (sulfuric said with glacial acetic s.aid). Table 1
presents the determination results for mixtures of
aesnaphthylene and acenaphthens. The results which are not
quite precise can be corrected by means of a calibration
curve when strictly proceeding-according to the analysis
directions. Simpler is the calorimetric method in which the
aoenaphthylene is distilled rapidly in low absolute pressure
(in order to avoid-resinification) and investigated
Card 1/2 photometrically in the monochromator UM-2. A figure shows the

Quantitative Determination of Acensphthylone BOV/75-14-3-26/29
dependence of the optical density on the concentration of
the acensphthylono. Table 2 presents the determination
results which show a marimum error of I %. There are I figurej
2 tubies, and 5 referencesp 2 of which are Soviet.
ASSOCIATION& Odevskiy olitakhnichookiy institut (Odessa Polytechnical
SUBMITTEDs Asroh 71 1958
card 2/2-

50) SOV/80-32-5-34/52
Dashevskiy, M.M.
AUTHORS: Petranko, G.P.,
TITLE: The Oxidation of Acenaphthene to Naphthalic Anhydride
PERIODICAL: Zhurnal prikladnoy khimii, 1959, Vol 32, Nr 5, pp, 1126-1132 (USSR)
ARSTRACT: The vapor-phaso oxidation of acenaphthene to naphthalio anhydride is
studied here. The oxidation was carried out by air at 320 - 4350C
over vanadium catalysts and manganese dioxide. Vanadium pentoxide as
catalyst produces a mixture of acenaphthilene with unreacted ace-
naphthene. At an increased air supply naphthalic anhydride may be
present to the maximum amount of 29%. The addition of potassium sul-
fate to the catalyst raises its activity and with the increase of the
temperature the yield of naphthalic anhydride rises sharply. Naph-
thalic anhydride is the principal product of the reaction, if the air
supply is sufficient. The oxidation of acenaphthene over manganese
peroxide leads to a yield of 28 - 30% acenaphthilene at 3250C. The
highest yield of naphthalic anhydride is obtained with a catalyst of
iron vanadate, with potassium sulfate at 350 - 3700C and a volume ratio
acenstphthene :: air - 1 : 100. The time of contact is 2.9 sea. The
Card 1/2 yield of anhydride Is 75 - 80% of the theoretical.

The Oxidation of Acenaphthene to Naphthalic Anhydride S(W/80-32-5-34/52
There are 3 graphs, 2 tables, 1 diagram and 16 references, 1 of which
is Soviet, 5 American, 4 &4311sh, 3 German, 1 French, 1 Swiss and 1
Italian.
SUEMI=: January 8, 19!58
Card 2/2

S/079/60/030/04/49/080
BOOI/BO02
AUTHORt Dashevakiyj M. X.
TITLEs oxi"fi3on -_o'F47@-_ Into Nitronaphthalio Acid
PERIODICALt Zhurnal obahchey khimii, 1960, Vol- 30, No. 4, pp. 1271-1274
TEXTs In the present paper the author describe the possibility of an
oxidation by means of sodium bichroaate (at least of certain organic com-
pounds) in a solution of hydrochloric acids without the separation of
chlorine. In this cases tho concentration of hydrochloric acid in a certain
organio compound to be oxidizedv must not exceed a certain degrees and must
lie in a certain ratio to the amount of the biohromate used. This is shown
here for the oxidation of I-nitroacenaphthene. The oxidation of 4-nitro-
aoenaphthene in a modium. of sulfuric acid takes place very slowlyp and
gives rise to a low.yield. In a sodium containing hydrochloride, oxidation
takes place quickly and under easy conditionsp without resinification and
combustion. The yield of 4-nitronaphthalio acid was 80-65%. The amount of
hydroohloric.acid must not exceed 5 moles of hydrogen chloride per I sole
of sodium bichrozatoo while the concentration of hydrochloric acid must
Card 1/2

Oxidation of 4-Nitroisoonaphthens Into Nitro- 3/079160/030/04/49/080
naphthalic kcid BOOI/BOO2
not be more than 20%. Otherwise, chlorine is separated in the oxidation of
hydrogen chloride. The best results were obtained in a double excess of
biohromate and by vilgorous mixing. There are 4 tables and 4 references,
2 of which are Sovieto
ASSOCIATIONs 0desski;r olitekhnicheskiy institut (Odessa Polytechnic
-In$ titutZ
SUBMITTEDs March 16, 1959
Card 2/2

DASHEVSKIY@ II.M,.
---
Syntheo-Is of naphthostyril. Izv. vys. ucheb. zav.,- khim. i khim.
tekh, 4 no. 2sR32-Q37 161. (MIRA 24:5)
L 9desiody politekhnichaskiy institut, Kafedra organichookay
khimii,
(Naphthostyril)

25394
3/080/61/034/002/015/025
A0571AI29
AUTRORSs Daah4rakiy, M.V.@ Petrenko, G.P.
TITLEt rehydrogonstiou of aoanaphthene
PERIODICALs Zhuxral Prikladnoy Khim-4i, Y 34, no 2, 1961, 391-395
TEXTt Vapor phanA dehydrogenation of aoenaphthene with and without
catalyst was invesitigated. Various Uluants (nitrogen or @7,axbon dioxide
gas, BUM or ai.,@) wer6 uved and a tachnioally suitable @:atalytio zathod
with a Zn%1 catalval. wao icvait,,ped giving a yifili of 90% of a produat
oontmining 95-980 acoAaphthylena. The latter Is cf intpros% for synth
of nopolymers with e;eei.4j%l proper-tisa and thus for tl,,e prc.duotion of
plasti-.A. Soma of the first ayr-thenes cf acenaphthylare were made by
K. D2iewonaki, G. R% alski (Ref 10i Ber., 4.9, 249)@1912)), and X. Dzie-
wonski, T. Stolytwo Nof 121 Der 1 1540 (1924 j, while later investi-
gations wera @@arried out by J. Ref 131 3.3on.0hem.1nd., 68, 225
Card 1/8

25394
S/Cao/61/OA4/002/015/025
Dehydroganeti,@n of &.qoL%;hthst.9 A 057i 1,129
(1949))v w- YqnA9tvrt J- Jono (Rof -149 J.8oo.0hem.1nd., 6e, 229 (1?49))t
and Id. Kaufmann, A.?. Williazu (Ref It J.Ap;l. Chem., 1., 489 (1951)). The
two last mentional are the mQat important. The Tresint lehylrcgonation
experiments were nazried ou'lh itt two serinst 1. without -istalyat and with
verio-4s diluento &*, MOC-9603,01 in an app&rptus d6airibed in a previous
paper (Hof 1581%tohn- zap. Olvaskogo ;Aitekhxt. inst., lsoientlfie re-
ports of the Odesea Polytqihzil@ial inatit-Ate), 16 73 (19510)) and 2. with a
zinrj-%1Lz!n= ottta.Iyst -'A a U-shajal reauter tube. In ths first series
it wa;; obser7ed 'What with irv-.a%o;L:Lg tcomreratu:.re the aoena;hthylene content
inarOILMOSy but alric the uvr@-nn" of aide prziiicto (ananaphtk&ne ;olymera).
Optimum resulto were wit-h -arbon diox.Jle as diIuent, -1.o., 68-3%
yield of acenaphthylane. Optimum ratio -.,f diluent/lao onaph then 9 is 2.5
for carbon dioxidop 11.9 for nitragan (yield 58.6%), 2-3 for steam (50-4%
yield)t and 5-6 for air. Without diluout reaction cocure at lower tempe-
rature with a 39-5% yield% but a considerable osxbonization of the product
is observed . The Zn/A1 catalyst was prepared as followes 540 g ZnO, 60 9
A120 31 Is g K2SO4 and 540 ml H2 0 were mixed, the paste applied on a glass
Card 218

25394
510801611034100210151025
Dehydrogonation of aaensphthens A057/A129
surfaoe (5-6 am lay,ar) and left too stand for 24 hra at room temperature.
Then 4-7 mm Pieces "Fare Iri6d for 2-3 hre at 1250C, and for 2-3 hre at
60000. Lfter this the catalyst was treated for several hours with steam
at the temperature )f the experiment. The diagram of the devioe used for
dehydrogenation experiments with this catalyst is presented in Fig 1. Hot
water was passed through the cooler (5) to avoid obstruction of the outlet.
The present authora consider it unneoeseary to pass aosuaphthene vapors
with a corre 11 ponding diluent as it is suggested in the German patent
921989, OBI 5424 (1959). The soa;;,ad c.)jler was water-oooled. IZL each ex-
periment 30 - 100 g soonaphthene were used and the duration varied from
15 - 120 min. Some of the obtained results are presented in Tab. 2.
Considerable effeat of temperature was observed (Fig 2). The drop in
aoenaphtb.vlene content above 60000 is explained by an increase of side
reactions, i.e., formation of naphthalene mothylnaphthalene ate. An
essential effect on dehydrogenation is exeroised by the contaot time.
There are 2 figures, 2 tables an& 17 references' 4 Soylet-bloo, 1x non-
Soviet-bloc.
Card 318

25394
S/08 61/034/002/015/025
Behydrogenation nf coonaphthene A057YI,129
ISSOOIATIONs Cdoeskiy olytekhniahoakiy institut (Odessa PolyteohniQ
,. lnotitutq@
SUBMITTEDs FebruarY 59 1960
Card'4/8
6

DASKMKIY M.M kand. khim, naukv dotsent; SHAMIS., Ye.M.
Friedel,Crafts acetylation of aromatic hydrocarbons. Nauch.
zap. Od. politekh, inst. 4003-87 162. (KIRA 17:6)
1. Predotavlena kafedroy "Organicheskays, khimiya";Odeaskogo
politekhnicheskogo Instituta.

DASHEVSKIYv M.M., kand. khim. nauko doteent; BALYKINAr Ye.P.; PUPINA, L*N*
Synthesis of -(4-acenaphthyl)-ethylamine (IV). Nauch. zap.
Od. politakh. inst. 4008-90 t62. (MRA l7t6)
1. Predstavlena kafedroy "Organicheakaya khimiyall Odesakogo
politekhnicheskogo instituta.

W*
DASHEVSKIY M.M I kand. khim. nauk,, doteent; TERENTIYEVAp G.N.
Nitration of some aromatic hydrocatbons. Report No.l.
Rauch. zap. Od. politekh. inst. 4001-94 162.
(KM 17:6)
1. kredstavlena kafedroy "Organicheakaya khimiyall Ode'sakogo
politekhnloheakogo instituta.

DASHEVSKIYP M.M.; FETRENKO., G.Pl,
Vapor phstse oxidation of fluorene. Zhur.prikl.khim. 35 no.3:
693-696 Yr 162. (MM 15:4)
(Fluorene) (Oxidation)

DASHMKIr, M.X.; SHMIS, Ye.M.
Olaoftylatlon of aoompbV". Zhur. ob. khis. 33 xo.511V3-
1576 My 163. (MIRA l6s6)
1. Odemskiy po3ltokbaiebaskiy inatitut.
(Acensphtbane) (Acetyl group)

DMIREVSKIY M.M.) MALEVANNArA, Z.F.
Structure of dipropiWlacenaphthene, Zhure ob. khim, 33
no.5:1576-. (MIRA 16:6)
1578 MY 163s
1. Odesold:r politakhnichl'skiy inatitut.
(Acenaphtbens)

DASHEVSKIY, M.M.; KALEVANNAYA, Z.P.
Synthesis of some acenaphthvlcarbinols. Zhur.ob.khim. 34 no.ls2l3-
216 Ja '64. (KRA 17:3)
1. Odessk@y politekhnicheakiy institut.

* DASM@VSK'-'l' , ; gll-413, yp.@-I.
, .
of ar-ylr . nov, baved On
ttrb(;x,0lc w@lrlj ar.-.1 d!fiml
polyey,tllc h.Tdrocr,-bnnq. Ujkr. khtr,. zhur. 30 no.(--!:r-3-'@-9Z,1 164.
( @,,UAUA -17: 10)
i. Odevokly po-ILteklinichesk.y institut.

DASU.VSKIY, MM.; 1,1..,U.EVANNAYA, Z.P.
.. - .
'Stru--Aure of dini t;rua canaph then e derivatives. Mr. Cr1r, k1him.
I no.?112'012-12,76 J! 165.
(MIRA 18:3-1)
1. Odevskily poll tekhnicheskijr insLitut.

MAGAZINER, Z.G.; DASHEVSKIY, M.V.
Analysis of present day conditions of pipe founding in the U.S.S.R.
and in foreign countries, Izv. vys. ucheb. zav.; chern. met. 7
no.3t2l&224 164. (MIRA 17.
:4)
1. Moskovski,5r institut stall i splavov.

DASEEVSKIYO MS.; IIAGAZI*lt, Z.G.
Technical and economic indices of the various methods of
cast iron pressure tube casting. Izv. vys. ucheb.(zav.;
chern. met. 7 no.912O2-2O8 .164. MIRA l7t6)
1. K)skovnkly institut, atali i splavov.

137-58-6-12122
Tianslation from: Referativnyy zhurnal, Metallurgiya, 1958, Nr 6, p 134 (USSR)
AUTHORS: Petrov, D.A., Kekua, M.G., Dashevskiy, M.Ya., Zemskov,
V,S., Petrusevich, R.L.
TITLE: Progress of Work on the Refining of Germanium by Means of
Crystallization and Achievement of Germanium Single Crystals
With Longitudinally Homogeneous Properties (Razvitiye rabot
po ochistke germaniya metodami kristallizatsii i polucheniye
monokristallov germaniya s ravnomernymi svoystvami po
dline)
PERIODICAL: V sb.: Vopr. metallurgii i fiz. poluprovodnikov. Moscow,
AN SSSR, 1957, pp 50-58
ABSTRACT: Exper@ments were performed in order to investigate the
possibilities of producing single crystals with uniform longi-
tudinal and cross-sectional distribution of impurities by means
of pulling at a controlled rate as well as by pulling accompanied
by constant feeding of pure Ge into the melt. The raw poly-
crystalline material with a ? of 5-20 ohm/cm was purified by
means of zonal recrystallization under a vacuum of 10-4 mm
Hg, or in a stream of HZ, until it exhibited a ? of 50-n6o
Card 1/3 ohm/cm. A high-frequency heating apparatus with three

137-58-6-12122
Progress of Work on the Refining of Germanium (cont.)
induction units moving back and forth was employed. It was found that single
Ge crystals, grown by the Chokhralskiy method from purified material with
a ? of 50-60 ohm/cm in conjunction with mixing of the melt by rotating the
crucible and the growing crystal, can achieve? and -rvalues of 60 ohm/cm
and 1000 JA sec, respectively; if the rotation is omitted from the growth pro-
cess, the ? and theC amount to 25-50 ohm/cm and 200-250 p sec, respect-
ively. The UVM-Z apparatus, employed in the process of pulling the crystal
under vacuum (10-4 mm Hg) in accordance with scheduled variations of the
rate of pulling, utilizes a hydraulic raising mechanism which provides a
smooth variation of the elevation rate from 0.05 to 8 mm/min in conjunction
with the rotation of the crucible and the growing crystal. The 9 value of
grown crystals 50 mm in diameter and 180 mm long deviated from the mean
value of rV40-60 ohrri/cm, at a length of 100-150 mm, by 8.9-9.3% and was
within the limits of error of measurement. It is pointed out that because of
variations in conditions of crystallization only macrouniformity in the distri-
bution of impurities can be achieved by this method. The variations were
eliminated in another device which was designed for a process in which the
pulling is accompanied by feeding of pure Ge into the melt. Prior to im-
mersion into the melt, the feed ingot passes through a heating unit (composed
of a quartz tube wound with W wire), while the ingot being pulled passes
Card 2/3

137-58-6-12122
I@rogress of Work on the Refining of Germanium (cont.)
through it water-cooled unit made of stainless steel. The process of pulLg
was carried out in an Ar atmosphere. The fact that the feed ingot and the
growing crystal, which may rotate, were placed excentrically with respect
to the axis of rotation of the crucible, contributed to a better mixing of the
melt contained in the crucible. It was found that the lonaitudinal q fluctua-
tions irk single cryfitals obtained by this method did not @xceed t576,
whereas in the case of a crystal produced in this apparatus without the em-
ployment of pure Ge the scatter amounted to � 24%. Studies of crystals
with a diameter of 50 mm have revealed that the ? was sufficiently uniform
throughout the cross Section of the crystal and that the diffusion-path length
of minority current carriers did not deviate by more than 10-15016. The
authors express the opinion that intensive cooling of the growing crystal,
which results in the achievement of a plane crystallization front, contributes
to uniform distribution of electrical properties throughout the cross section
of the crystal. Grown single crystals which exhibited nonuniform cross-
sectional distribution of were subjected to heat treatment in order to bring
about a redistribution of values; in the process the mean value of resistiv-
ity remained unaltered, while the diffus th length of the minority cur-
rent carriers increased somewhat. 1- =ium--Proces sing 2. Germanium--Crysi
zation 3. Single arystals--Growth 4. Single crystals--Properties I.S.
Card 3/3

D 4
lamc- 5. P..
BjLr,.-
swoo
ILSXV-
Hm.r"-
A.A.
A,
ro,w% owtw4 for UO sth nrical offlaval
cwor*=* *a st.01 plod tics, vm4ow- 30 M 2939.

S/576/6i/ooo/ooo/oo6/o2o
E132/E135
Tttova, E.M., and
AUTHORS., Voronov, B.K.9
Khvostikova, V.D.
TITLE2 Obtaining uniform single crystals of semizonduttors
by Czoclxralsklls method
SOURCEs Soveshchaniye po poluprovodnikovym material&m, 4th,
Voprosy inetallurgii i fiziki poluprovodnikor,
poluprov(adnikovyye soyedineniya i tyerdyye splayy.
Trudy so-washchaniya. Moscow, Izd.-Vo AN SSSR) 1961.
Akademiya nauk SSSR. Institut metallurgii imenL
A.A. Baykova. Fiziko-tekhnicheskiy institut. 5.1-54
TEXTs The problem in growing crystals for sleotrical
purposes is not now just one of purity but of distributing a
controlled impurity in a uniform way. Experimentally this is done
by making the crucible in the form of two communicating vessels
(Fig.1). Generally the inner vessel contains the impurity in the
desired concentration and the outer contains the material, e@zther
pure, or with a selected reduced concentration of impurity. The
connecting aperture is made so small that diffusion of the
Card 1/3

Obtaining unifor, sinale crystals s/576/61/000/000/006/020
E132/EI35
impurity from the iniler vessel to the outer can be neglectedi the
flow in of new material thus takes place QLnlY when the crystal is
withdrawn from the mfilto The concentration of the imo.drity in
the inner vessel can thus be kept up by feeding it inio the outer.
Formulae are then derived relating the geometrital dimen3ions of
the inner and outer -ressels and a specimen caltuiat--on is given
for designing a crucible for growing an alloyed single @rry3ta_'.
If the distribution ,,)f impurity in the crystalline rod drawn oull.
of the crucible is to be non-uniform then this can be arranged by
making the tross-sectional area of the outer vessal vary
appropriately with depth,
There are 2 figures and 12 referencess 3 Soviet-bloe@ and 9 non-
Soviet-blo,,@. The four most recent English language reftrencea arez
Rsf.4- W. Leverton, Jo Applo Physe, 1958, V.29, 12U-1242@
Raf.5; W. Leverton, J. Elettroc;hem. Soc.q 1958, 2-2-@@
Ref.7- Nelson. Transistors, .1956, Vcl.lg publ. RCA Laboratories.
Ref.98 W. Pfann, J. Robsteller, G. Indlg. J. Appl. Phyls., 1911-8.
Vo.i@@ 29, 12@8-iz4o.
Card 2111@

S/576/61/ooo/ooo/oo6/020
Obtaining uniform single crystals E132/EI35
Fig.1
C,
rcv"
V,
Card 3/3

;@in-single@-cwystai gernwilun Hall--:and. X@rnst_ effects the
presence:. ofl,`bi4ilisotropy Mith respeci -to t1w; Munson-Baldwet' yev thennanagnetic
effect the Thomson-Colx.Manmr galvanomagnetic, effect@
Along with':the foregoing, a @check'-was* made, Cim the- -presence- -of anisotrq*- with
-respect tb.the.thenrio--aif -and electAc corAtctivity-in@a semiconducting ger-
maniun,@ci@6-tal.*a64 cnAd.'6 systemi aIong,.-the:zpri=ipal crystallographic, axes,,
--although.,suc'h- ahisotroor has -not: -been-, hith4w.-to i observed in metallic cubic-.
No re A Weak Ids-
crystal- poNivlous - siardi on this subject-is )=wn.-- I ie
-is -of -the.magnetic field
the. galwnixnagnetic, efh'tct' I@mvportional, to the square
--intensit3f,.-and'its-n~igri~'Li-u.de-.dep6nft'cn thelorientations-of the and of
Card, l/ 3

DASHEVSKIY, M.Ya,jo, TITOVA., E.M.; KHVCSTIKOVA) V.D.
A2@
Chokbal'skil'a method of growing single
dis.tribution of impurities. Trudy Inst.
crystals with a uniform
met. no.8:1/,3-148 163..
(MIRA 14110)
(Crystals-Growtb)

,;/020/62/146/004/010/015
Bioi/BW

AUTHORS: Lazarev, V. B.@'Dashevskiy, M. Ya.
-TITLEs Surface tension of indium - antimony melts

PERIODICAL: Akademiya nauk SSSR. Dokladyq v. 146, no. 4, 1962, 822- 825
TEXT: The surface tension of 28,In - Sb melts of various concentrations
,.-,'an noal3ured range of 550 - 700OC'for@ the following purposest (1) to find
out whether a singular point in the diagram of surface tension versus com-
ponition corresponds to the singular point In the phase diagram of a given
system in which congruently melting InSb is formeA, and (2) to obtain data
on the surface tensicn of melts with a non-stoichiometric composition,
-such data being of practical importance in p@lling InSb single crystals.
The authors prepared the specimens according.to Czochralski's method. The
surface tension 6 was determined from the maximum pressure of a gas bubble.
The wall of the quartz capillary was ground to a thickness of 0.01 mm to
facilitate calculation of a. The measurement was conducted in an atmos-
phere of argon at approximately 100 mm Hg with a maximum total error of
1.2 %, corresponding to v7-0 dyne/cm. Resultst 6 is in good agreement
In
Card 1/3

S/020/62/146/004/010/015'
Surface tension of indium B101/B186
0
with the data obtained up to 500 C by D. A. Melford and T. P. Hoar 0.
'Inst- Met-, 85, no- 5, 197 (1956 - 1957)), 0. A. Timofeyevicheva and.P. P.
Pugachevich (DAN', 124, 1093 '(1959)). The authors0were the first to measure
ET In between 500 and 8000C. Between 650 and 6100 C, CT Sb was consistent with
the data by L. L. Bircumshaw (Phil. Mag. 17, 181 (1934))- In the experi-
ments covering the whole temperature range of melts, ahtimony was surface-
active toward indium. The surface tension of InSb was 425 � 20 dyne/cm.
The cur1re a versus moLt composition.showe a singu,lar point at
In ; Sb = 1 z .r Sb (C/RT)(1 - C)(aa/aC)[1/(1 + aln f/aln C)], where
r +
-f = activity coefficient and Sb In " 0 holds for. the isotherms of
antimony adsorption oa the surface of the melt. In InSb melts alloyed
with Sb, a is smaller thari in melts alloyed with In. There are 4 figures.
ASSOCIATIONs Institut metallurgii,im.-A. A. Baykova-(In,s,titute of Metal-
lurgy imeni A. A.' Baykov). Institut obshche@'i ------ __
neorganioheskoy khimii Im. N. S. Kurnakova Akademii nauk----.--.,-
SSSR (Institute of General and Inorganio Ch;mietry imeni
Card 2h N. S. Karnakov of.the Academy of Sciences U SR)

elm wMv=vAMMwMMwIM
S/020/62/146/004/010/015
Surface-tension of indium Blol/B186
PROSENTEDs May 20, 1962, by I. I. Chernyayevv Academician
SUBMITTED: May 20, 1962
Card 3/3

4CCESSION Nit: AT4030798 8/0000/63/000/000/0125/0132
AUTHOR: Lw.,arev, V. Bs; Dashavaklys M. Ya.
TITLE: A study of surface phenomena in welts of the In-Sb system
SOURCE: AN UkrSSR. Institut astallokeramiki I apotoial'ny*kh splavov.
Poverkhnosti2y*ye yavleniya v rasplavakh i protsessakh poroahkovoy metallurgii (our-
face phenom?na in liquid metals and processes in powder metallurgy). Kiev, Tzd-vo
AN UkrSSR, 1963, 125-132
TOPIC TAGS: surface phenomenon, indium, antimony,, indium based alloy, antimony
containing alloy, surface tension, indium antimonide
ABSTMT: In this paper the authors presented the results of an investigation of
the concentration and temperature relationships of the surface tension of indium-
antimony system malts with the congruently malted chemical compound indium antimo-
nide. It was explained thae a correspondence exists' between the spatial points on
the structural diagram of the indium-antimony system and on the diagram surface
tens ion-compos ition. In siddition, experimental data was obtained on the surface
tension of melts.for which the composition does not strongly differ from the
stoichiometric melt of thoj Indium-antimonide compound, A diagram of the instrumaut
Card 1/2

ACCESSION NR: AT4030798
for determining the surface tension was presented. Results were presented in graphs.
The temperature relationship of the surface tension was studied as the following;
indium sat a temperature range of 200-8000C), antimony (at a temperature range of
650-800 C) and 26 alloys of the indium-antimony system at a temperature range of
550-700OC'. It was established that throughout the entire investigated temperature
range, antimony is surface active in relation to indium. It was shown that the
existence of an intermetaIlic compound in the indium-antimony system finds repre-
sentation in the isotherms of the surface tension in the malts of this system*
Orig. art. has: 6 figures md 2 formulas.
ASSOCIATIOU: Institut obehchey L nearganichaskoy khimii AN SSSR, Moscow
(institute of General &nd lnorga!iic Chemistry, AN SSSR)-'
SUBMITUD: WoM DATE ACQ; 16Apr64 00
008
SUB CODE: HL ND REF k4W: 012
Car-d 2/2

4 A& EWT(1) I (M)/T/E-'9-' (t)/ET I G GPAW@',
ACC NR:
-AR60257ILT SOURCE CODE: UR/0058/66/OOO/oo4/AOT-VAOTl
AUTHOR: Dashevakiy., M, Ya.
TITLE: Some--Probl In obtaining crystals with specified distribution of impurities
by growIng from the melt
SOURCE: Refs zh. F1z1:Ka, Abs. 4A600
REF SOMICE: Sb. Simposium. Protsessy sinteza i rosta kristallovi plenok poluprovod--
6T-Tev
nik. vwterialov, 19 . isy dokl. Novosibirsk, 1965, 9
TOPIC TAGS: @inqjS crystal growingf, Crystal impurity, dendrite, crystal lattice
structure
ABSTRACT: The author considers possible causes, oZogneous and,troinhomo-
of mi@oh
geneous distribution of impurities inningle crystals om the me - the Czo
ralski method, and then discusses methods of obtaining single crystals with homogene-,
ous or specified impurity distribution. The author considers the distribution of
purities in ribbon-tyTe dendrites of substances that crystallize in a diamond lattice:
or a zinc-blende lattice, when these crystals are grown by the method of vertical 7
drawing from the meltp and discusses the distribution of impurities and the structure
of the dendrite. (Translation of abstract]
WN
SUB CODE: 2D
L. Lc2Ld--j Pt'

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-ACC NAVAW60287M SOURCE CODEt--UR/0363/65/001/011/1901/197I
lit-
AUTHOM Latarev. V@11@ Daihi@skh, A. Ya. 00
NMI
.am .m.L-wW-Lnorjanic Ch.emLstEj In 52urn
ORG: imiLtmi"LA o No So akovq Acadenqr of
Sciencen SGSLAInatilmt obahchey7f -neorganicheskoy khinii Akademli nauk SSSR); In$-
Kletall in. A. A. -B
titutel of ov (Institut ustallEgii) j5
Al
TITLE: Surface phentmena and crystallization processes in doped Indium antisonid
loys
AN:'SSSR. Is4eiiiji -anichaskiye materialys v. ls no. lli 196S, 1901-@
SOURCE,:
-1910
TOPIC TAGS.- n Jr:j t&d` ImonAd4i tellurium
!ampo ",an't germanium, sur. ace
tension , chemical alis' tion4 metal cr@rstanization, alloys cr;ptal.growth
orp
ABSTRAM The effect - o :f
_Lolgnlupq tellurium, and geruanium:on the surface tension
antimonide@,melts was -studie7d, -and it was shown that So and Te are absorbed.
at the; Interfaces -whpimian.pricticilly no absorption of germanium occurs. Differences
in the grlowth of JxdRum antimonide dandrites from melts. doped respectively with Se
and To are due, to. tho different aboorbability.of these substances on indium antino-
nide. A new method is proposed for estimating the effective generalized moment's of
elemer4ts a-ad compounds, and it Is shown that the structure of melts can,be evaluated
UDCt 546.6811861tS32.6
JCa 1/2
L rd

LAZAREV@ V.B.j DASHZVSKIY, M.Ya.
Surface phenomena and crystallization processes in alloyed
indium antimonide melts, Izve AN SSSR, Neorg. mat. 1
no.11:1901-1910 N 165* (MIRA 18112)
1. Institut obahchey i neorganicheskoy khimli imeni N.S.
Kurnakova AN SSSR i Institut metallurgii imeni A.A. Baykova.
Submitted July 5. 1965.

',,'CC NR, A116o35419 SOURCE CODE: UP/0137/66/000/009/r,052/GO52,
I
!AUTHOR: Dashevskiy., M.Ya.;.-Mirgalbvskaya,, M. S.; Lazarev., V. B.
TITLE: Growing of indiuu antimonide crystals from melts doped with surface-activeand
surface-inactive additives
SOURCE: Ref. zh. Metallurgiya.$*Abs. 9G,464
REF SOUCE: Sb. Poverkhnostn. yavl6niya v rasplavakh i voznikayushchikh iz nilch tyerd
fazakh. Nallchik,, 1965.. '579-584
,TOPIC TAGS: indium compounds antimonide., surface active agent,, single crystal growing"
surface tension., dendrite
ABSTRACT: A description is presented of a combined setup for growing of single crys-
tals drawn from the melt and measuring the surface tension of the melt. Measurement of
the surface tension of a melt of InSb doped with Ge or Be has shown that the Be is
surface-active (it is adsorbed) while the Ge is surface-inactive (is not adsorbed) as
an additive. Single crystals and dendrites of InSb were drawn from melts doped with
germanium in the range 0.05 - 2.5 at.% and Be Ox24 - 0.25 at.%. With increasing Ge
concentration in the melt, the width of the dendrite ribbons decreased. No noticeable
influence of Ge on the growth of the single crystal was noted. Dendrites with large
Si content. could not be grown., for their growth stopped at 0.25 at.% Be. No morph-
ological differences were noted between single crystals grown from melts alloyed with
Be or Ge. The dependence of the supercooling of the InSb melt on the Ge or Be con-
3/2 uDc.. 621.315-592

ACC NR: A116O35419
icentration Ghows that at these concentrations the Ge and Se have 1Itle influence on
ithe value of the supercooling. (IVom RZh Fiz.) (Translation of abstract]
SUB CODE: 20
Co

ACC NR
AR7000855
there is a regular relationship between one of the most widely used criteria of I
surface activity -the- generalized moment (m) and established relation.
ship m = Ral is used to determine the effective value of m for individual metals
arid for InSb, as wel]. as to determine the degree of ionization of atoms of the
substances in their own melt. N. Pokrovskiy. [Translation of abstract) JGCJ
SUB CODE: 20/j
Card 2/2

------------
ACd_@
_7 SOURCE CODE: UR/0058/66/000/009/A049/A049
AUTHOR:
@evok@t, M. Ya..; Mirgalovskaya, M. S.; Lazarev, V. B.
TITLE: Growing single indium antimonide crystals from melts doped with surface-
active and surface- inactive Impurities
1:31
SOURCE: Ref. zh. Fiztka, Abs. 9A415
REF SOUrtCE- Sb. Poverkhnoatn. yavlentya v rasplavakh i voznik&yuah0h1kh iz
nikh tverd. fazakh. Nachik, 1965, 579-584
TOPIC TAGS: crystaA, crystal growth, crystal Impurity, Indium antimonide,
crystallography, surface active alloy, surface inactive alloy, surface active
impurity, surface inactive Impurity, impurity, semiconductor crystal, germanium 3.,. '.
alloy, selenium alloy, doping
T.
A13STRACT: A description is given of a device for growing monocrystals (C) by
pulling them from a melt (M), and for measuring surface tension of M. Measure-
:.`:-ments of surface tension of M In InSb doped with Ge and Se showed that Se to a
su -active impurity, and that Ge is a surface -inactive impurity. Monocrystals
rface
.;I Card 1/2

;.@Cc NR
A117000837
and dendrites from M [secl were grown, alloyed with Ge In the amount of 0. 05-
2. 5 at 16 and with Se In the amount of 0. 0024-0. 25 at %6. An increase in the con-
centration of Ge in the M was accompanied by a decrease in the width of dendrite
strips. No particular effect of Ge on. the growth of C was noted. No success was
achieved In growing dendrites containing large amounts of Se, since at 0. 25 at %
of Se their growth ceases. No morphological differences were noted between C
grown from M and alloyed with Se and K grown from P and alloyed with Ge. It
was shown that within the given range of concentrations, Ge and Se affect the
process of supercooling only slightly. @.G,: Volkov. [Translation of abstract]
(SPI
'SUB CODE: 20V
I Card 2/2

ACC NRo AP7003391 SOURCE CODEt UR/0020/67/172/002/0403/0406.
AUTHORt _kshqypkjyx_M. Tao. Kukuladze, 0. V., lAzareft V. B.; Mirgalovskayap M. &
ORG: Notallurgy Institute im. A. A. Baykovp Acadomy:of Scienceeg SSSR (Institut
motallurgii Akadomii naule SSSR); Institute of General and Inorganic Chemistry in.
N. 5.!Kurnakov, Academy of Sciencesl, SSSR (Institut obahchey i neorganicheskoy khimU
on% I
JJcadomii nauk SSSRI
TITIZI Surface phenomena and crystallization processes in gallium antimonide aelts
SOURCEt AN SSSR, Dokladjrk v. 1721, no. 29 1967, 403-4o6
TOPIC TAGSt surface tenniong gallium compound# antimonidej crystallization
I ABSTRACT: In order to dotermine the general applicability of the regularities
characterizing the relationship between surface phenomena and crystallization pro-
c6ssos in indium antimonide mielts, the following phenomena were investigateds surface
tension of melts of the ga1lium-antimony system) influence of zinc and tellurium on-
the surface tension of.gsLUium antimonidep and influence of these admixtures on the
supercooling of Ga-Sb melts and on the growth of oryqtals from the melts. It is
suggested that the behavior of the impurities in the solvent malt can be predicted
from the difference of aturface tensions in the case of type AIIISb antimonides. In-
AIIIBV compounds which orystallize in a zino-blende-type latticep a correlation
exists between the mean sitomic maber of the compound and the surface tension at the
1/2 UDCg 5".6829861 t532.6

ACC NR, AP7005591
malting pointl the higher-the mean atomic mmber, thJ lower the surface tension of
the compound. Data on the effect of To on the supercooling of indium antimonide in-
dicate that surface-active admixtures increase the probability of formation of a
solid phase nucleus. At:& certain concentration of Tog the growth of lamellar den-
drites of gallium antimoride was hindered# causing distorted dendrites to growg then
was stopped altogether as; the To content increased f@rther. The introduction of zinc
in appreciable amounts did not interfere with the gro6th of lamellar dendrites of
gallium antimonide. The regularities found by studying the role of surface phenomena
in the crystallization of' indium antimonide malts wer,e found to apply to g-1141= ,
antimonide as wellp and are therefor* thought to cover at least all compounds of type
AIIIBV which crystallize in a zinc-blande-type latti;oe. The paper was presented by
Academician Sazhin, N. P., 4 Apr Orig. aft. hasi 3 figures and 1table.
SUB C @O/SUBH DAT13 04Apv&/,- MM WI W9/ OTH WS 001
2/2