SCIENTIFIC ABSTRACT RYZHAKOV, L.YU. - RYZHANOV, S.G.

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• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT


A KC1
PHASE I BOOK EXPLOITATION SOV/461o
Leningrad. Arkticheskiy i Antarkticheskiy nauchno-issledovatellskiy institut
Problemy Arktikii Antarktiki; sbornik statey,.vyP- 3 (Problems,of the Arctic,
and Antarctic; Collection of Articles No. 3) Leningrad, Izd-vo "Morskoy
transporty" 1960. P- 500 copies printed. LXerox copy]
Sponsoring Agencies3 Arkticheskiy i:Antarkticheskiy nauchno-issledov.ate.11skiy
institut Glavnogo upravleniya Severnogo morskogo puti Ministarstva morskogo
SSSR.
Resp. Ed.: V.V. Frolov; Editorial Board: L.L. Balakshin, A.A. Girs, P.A. Gordiyanko,
(Deputy Resp..Ed.)., I.M. Dolgin,,%L.G..Kaplinskaya, A.A. Kirillov, Ye.S. Korot-_.
V.V. Lavrov, I.V. Maksimov, A.I. 01% I.I..Poznyak,,and B.V. Felisov;,,'e
Tech. Ed.: L.P. Drozhzhina.
PURPOSE.- This1collection of articles is intended for geographers and geophysi-
'cists, particularlythose.intarested in the problems of the Arctic and Ant-
arctic.
COVERAGE: This publication of the Arctic and Antarctic Scientific Research In-
stitute contains.articles on the water temperature in the Arctic.Basin, the,

case it appeared that heating which occurred in the troposphere an the
invasion of wann air-masses fromAhe Atlantic brought about cooling in
the.stratosphere* Jnthe other.case, cooling the stratosphere through

Subject 'AID P 998
USSR/E,ngineering
Card 1/1 Pub. 11 -:12/13
Authors Kolenda, B. G. and- Ryzhakov, V. N.

Title Technical conference-on welding in shipbuilding
Periodical Avtom. svar., #5, 55-99., 1954
Abstract General review of the 24 papers- presented at: the. Conf erence
on welding.in the shipbuildinglAndustry'iThe Conf.erence.was
sponsored.by the Central Scientific Research'.,Institute and
220 representatives of~54 organizations,participated.,The
theoretical~and practical.problems, on automatic and semi-
automatic.methods of welding were discussed inreference.l.
:to the structure:of ships, boilers and machinery parts.,
Institutions: Academy'of Sciences, USSR; Main Administration of the.
Ministry of the Shipbuilding Industry; design bureaus of.''
various shipbuilding works,; and 3 engineering-institutions-.
Mose Ic
ow Higher, Engineering College, Leningrad Polytechn'
Institute and Leningrad.Shipbuilding Institute.
Submitted No date

FAYERM , Aron Iudovich; RYZIiAKOV, V.N., inzh., retsenzent; KONSON, A.S.y

R'

Spountantourt polarization of prAycrystallinif samples of tile N4111111t. wav, Allorwilrd ill rt~( r(3r Ill- 13 fain. IN44firA.

Itzhaimy (At-not. S'*I- U.N.S.W.
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hill-; r del" notene-V IJ the induced ctinliff,flent of P evil the ff ts di~iplicar At the Curie 1wint. At r
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h
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tit the prorvinus (xiUrietAtion
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tolust. in the 'rignetimlec. rVirionn. *I and AtKivre the
+ liect"Tict colinpandde %ilh the Ist I rim Curie Imint, #t. with the nonlinear vieriatirm oil the in.
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,
Nmilinear delvendei," 4 P on h iq fivefold also alitive the 1, anti A.
taken int's .1tv'sunt, to#
. 11 4- .1 A

I I
c"rior ["tit when- ~prionfancms Imlarimlitin i,l abown
* %rl + 1WJ)1- where .1 19/111 Ina
1, enrowriternity. "orn(it but bear mt the induced P01vkri- I-APTY-Nt~ '41111111c, lite -Kictitatitin tol the ~1%,Jlt
Thi-. eff,,et i~ tutrtictilarly promunecif if& BaTiO. fliciftlents of intfivWlml ~illfcle cfy~fal,~, pMftkcd by the 61
'
owing fee The Stro-at width of the temp. range of fa" ititrea~ 1-larizatintle cycle-. diappeacs, -1Y partly when
the field
ctnist. # with the temp. (50-4)(11", a-4 com-
..I lite dielec iN rtilinvVil, and there Mine ins a midual anizzleftrift)y in
.
loafed with .5-7'ii, ktichorlie salt. anti 10-13"in Kild'o0d. file- -n-,r that the rnit~)Hty rof the moroatentot are offori"Ited in
I>. jIllignimol (4 1 he diclorc. hy ter"is I'Mip, in fields tip to Ihe dircetion rof the field. in %Ufliciently %Irong firld,
kv,,'ctn.. at thr troilvi. - IM. '241. 112.2. 12.5.3, 1:14.8. ell-tin g mtri. nf the rorientatinn .4 tile p(MItaln.,M, m,.
.41111 VKH". 1111111ined will$ PDIYv:-rj,t. -nipi" -4 HaTiO. ntentle, the lonlyrrnt. ~jtrfpjc, car, he frrAlVd U1 (PlAsi-
voith 2- Al-of), (Citric point I-TI ). at-111411Y 41111w "On- 11101101TYA-P Und tile olinvc nirth('I ill caic'. CA the ')Kill-
lim-.ir iucnw~ rof P with Fand rclati-w-cly high P alvoin the t;ltlr,.U%Polarizati,)ni~-.1ppl"hi,. -%Umvrr;ruIcM1c,1s.,-J*
n-ri"It. tent farther Chan 2fl,'Rl* from and the Induced P' in the temp. range 12-4W
(allove the
the Citric ixiint. At mill higher temp- Ainve the Curk* Citric 1-kint). unit 4;f the mvtovitaneffu4 P. if, the rallgr
. and . ctitivot.. An the
a lin,.tr functims of E l(PR-1-.15" Ovell1w the Citric imint). are gi%vtt fnr a
-ifin. t leveler. n-gion well beltow the Citric point, it care lie ~lvccific x1filpir. P., is a lim-ar littlethoit of the temp. in a
Y,"ichiolrd feline be 1,,,havinr qoI o that lite induced P V-Aric!i fairtv wide temp. range. 105-IXIO. lelqlw the Citric peoint.
;end the nevillificarity (A the total P i%
linearly "ith F At rifilm temp., Pool the prelycryit. -ample, 6 of the t)nfcr'
,
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room temp..
at M,tnl~
(Niatthiasuint Vmt Ilippel, C.A.42,loorb3h).
f1cr
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OP U If

1i t.1 r-- I, tj
Piezoelectric effect of barium Wmfste~': 'A. V. Rsh.111
N. Lebedev Ph)~. fu~t_ Acud. Sei- -,f
M
vow): Zhar.- Fk'FLI. ~71f'wet. Fk. 19'.
I'mirr ~tativ by clettrnmetric inravuvcnicnt,~.
14 tile I"nVulial diaervilee ari~itlx gm cotllpft~~itin. the_
pirrot-ler, enodubti. it,, anti d,j, rmurmnitling to strr~--alp-
irretion of the liolarizaiion anti Ix-r-
plied. resp., Ill tile 11
Iwisdit-islarly fly that direeti-. X If)-* anti 1,4 X
In teffelfol the through
AA,,- fain. at about 00% ihen rixems rapkily loa ~Aarp 0
I-Ak at the Curie point. following exactly the trial).
~31`Litidla of the ~jKnt4JnV(JU1l POlAritUti(XI P.. - Dyn4nliC
It-lim. frora the differester Af f. #A the re-matice
Aad jittire".tAnec frrqtsvnci" of longitudinal vil"Utiom cof-
kir, of 41, p. length 1, and dielec. efirot. t, with f. atuff,
16-1 1. hir the frequency drpendencr of the current lxw%%ing
thr:vu the %ample (peak at about 182 kilolics-te-). dr
-ary between 2.3 X IW1
o kf. 14 plyrl %A~ found to v atilt
e.s.u., 'Tile pirzovive. rnmt. Where.
i~ t If.- value of ill the alywncr of strm,. froin, 1.3 X.
It, ~ fit 1.41 X Ill e.N'tt. Colviiqu"tty, 11411102 j, tj~jljle
"fill mlvantax-- ill devic" of vhv~vylw f
pit-f- kv. mirropluptir atilt loudslocakcr. Ill tcrtil~
file lt~lttls.. f, and it reltutiff approx. con't. up to al-ut I IW,
bul fliviliffrrrisrr of the al- current.. in w-witatirr all#)
mttit,,~tusncr dvcmaw, with ri.,hig tetnp.. K. 'rhot,

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USSR/Physical Chemistry Crystals, B-5
Abst Journal: :Referat Zhur Khimiya, No 1, 1957) 250
Author: Rzhanov A
Institution: None
Title: The Effect of Impurities on the Lifetime of Excess Carrier3 ir
Germanium
original
-Periodical: Zh. tekhn. fiziki,:1956, Vol 26, No 7, 1389-1393
Abstract: In single crystals of n-Ge containing impurities Sb and Bi and single
crystals of p-Ge with In impurities, the lifetime of the'carriers is
inversely proportional to the concentration of the impurities. It has
been found thatin single crystals of.p- and n-type Ge, the recombina-
tion zones are largely located in 2 different portions.of the barrier
region: in the lower half,:for n-Ge- and in the upper,,ha.f, for p-Ge.,
On the basis of the.values for the energy of activation of the residual
impurities in n- and p-type Ge, the conclusion, is made t1lat super-pure.
Ge contains Ni and Au.

/-I. lu, c V
AUTHOP5: Rzhanov,~A. V., Novototskiy-Vlasov,
Yu- 57, 1-3133
-Ye-1 z ~ve s G
TITLE: Study:of the Field Effect- and Surface Recombination in Germani-
(Issledo'vaniye.effekta polya. i poverk om-,
um. Samples hnostnoy r'ek
binateii v obraztsakh germaniya)
PERIODICAL; Zhurnal Tekhn., Iiz 1957, Vol..2721[r 11,~pp. 2440-24510 (USSR)~
ABSTRACT: The purpose of the..present paper was the check.,of.the assumptioh
of the invar iability of-,~he,:surface-recoiabination-centre.9-in the
course of.,a gas cycle:as~,~ well:-as the-mainta nanc6 of the dep6n
dence of the surface recombination velocity on ~he-e'lectrostatic
surfacepotential by way,of experiment., 'A parallel investigation
of the surface recombination and of.the..variation of the conduc-
n ve al:field
tivity in the cased of an:action of, the electric tra s
(field effect)-in different gas atmospheres fa__cili~aiteliii tAe de-
tectAn that under the influence of ozone new "rapid". sar~fac*ta_
with the eco*Anation devel
tes,a part of:.which is r op
on the germanium surface. Assuming that in cons,equence of the in-
fluence -of~the ozone'two energetic position states are intro-
duced their density-and the variations of the densityaccording
fter the ozone influence were computed and the ef
to th6.time a
Card 1/2 fective electron capture cross Isections of the dee
per lying re-

AUTHOR: Rzhanov, A. V.. Candidate of Physical and ''30-2-21/49
Mathematical Sciences
TITLE: Summer Course of the International School of Physics in
Italy (Kursy internatiionallnoy fizicheskoy shkoly v
Italii)
PERIODICAL; Vestnik AN SSSRi 1958, Nr 2, PP 87-08 (USSR)
ABSTRACT: Several years.age an International School of.Physicsyas:~

which every year,::,.:,.
founded by the Italian Physica Society,
holds a summer course. E-very course is devoted to a problem-
of modern,physics, which, as a: rule is -selected: from the
number of problems being in most rapid development-The.
summer courses1ake place at Varenna, a health resort:.
nearthe Italian-Swi ran' -ro h
ss border. They, are. ar gred. - r t e
'f scientifi
vacation time of'universities and o c research
centers. This,circumstance,:as well as the high prestige of:
the school, facilitates the invitation of -well -known',
specialists from different countri s The author:of this
e
paper also participated as a student. _4peri
od from
lurin th
,
July 14 to August 3, in them 5th summer course. This course

Summer Course of the International Sch6ol.of Physics in 30-21-21/4-0
Italy
was devoted to the physics of.solids. The program consisted',,
of three parts: Thequantum theory, the structural defects. of
solids, andthe properties of semiconductors'. 26 scientists
from various-countries held lectures and seminars. Among,.i...:...
others, the following scientists gave lectures: Professors
G. Bruks (Usi)~and N. Mott (England), D-Bardin and
collaborators (USA), the prof e., -3or F., Zeytz (USA) ands..
F. Franck (England)l professor G.Ten (USA), professor
G. Busch (Switzerland), Docto.r.P. Egren (France), O..Madelung.
(German Federal.Repiliblic)..Concluding, the author statesy.~ihat.
the close contact.of all participants in.a small town promotes,
iciai 'scientific in s
an inoff- tercourse,.w1hich.,was ofat lea t
5
the same profit.as the,courses themselves. It 'was pos ible-
to establish much clos(er scientific contacts than it- is
possible,duririg conferences and ..coneresses of short duration.
AVAILABLE: Library of Coneress
1. Physics-Study'and teaching-I~aly

AUTHORS- Rzhanov A V Pavlov, N. M., SOY/57-56-12-1/15
*
Selezrn~eva.,
, ~-w
TITLE: Investigation of :the Energy Levels. and of the
Ef f ective_
,
Capture Cross.Sections of,the Surfa e,R n
c I ec.ombinatio Levels
in Germanium (Issledovaniye energe.ticheskikh polozheni.*
i effektivnykh secheniy zakhvata poverkhnostnykh
rekombinatsioxinykh urlpvney-tv germanii)
PERIODICAL:. Zhurnal tekhnicheskoy fiziki, 1958, Nr 129,pp 2645-2656,.(USSR)
'ABSTRACT: An investigation of. the surface recombination levels.occurring
as a consequence of,heat.ing the germ,an:Lum;.samples:in,vacuum.or,-,.
because of.~the action'of ozone upon.these samples.was carried
out. Preliminary data'on the temperature dependencelof.the
ene .rgy ieveis~ard_of the effective-capture -cross sections wheL-
alhole and a
n elecironlare,.~captured by~these,levelsand the
,
dependence of., these., characteristics ~on the
~-f ield ampli-.
cro-ss
.
,
.
:tude were obtained.:The i
suppos tion is expressed.that:the
charges captured at the"slow"levels at:the~sdrface have a
considerable 'influene.e-upon-the characteristics of1the surfaced
recombination levels-Fro'M this supposition is deduced that
Of the recombination levels occurring because.of

AUTHORS: Rzhanov A. V. Arkhipova, I. A. -28-5-23/36
5.7
~
Bidulia
i
~
.
l
,TITLE: On the Applicability of the Method of-Velocity Measurement,of
Surface Recombination-by Means of the Change.-of Semiconductor
Resistance, in 2. Magnetic Field (0 primenimosti metoda izmeren:Lya.
skorosti pov,erkhno.stnoy,.rekombi,natsii po izmeneniyu soprotiv-,
leniya poluprorodnika Y. magnitnom-pole)

PERIODICALs
Zhurnal Tekhhicheskoy Fiziki,1958, Vol. 28, Nr
'59
pp. 1051-1052 (USSR)
ABSTRACTs in the paper by Zhuze, Pikus and Sorokin, (Ref 1) a new method
surface recombination velocity. s, by means of
the modification of.theresistance of,a;:thin semiconductor sam
ple in a magnetic field:was.proposed. The author.of this letter.
to the edito-r'employed the described method in:the investigation
of the modification s~according to the change.of,the electric
surface potential., The Lmeasilrements.weie conducted wit), two dej:L
vices. One 'served for tile ',measurement L of .the constant componentL
e;- surfacer b
6ing subjected ., to Lthe action of
of L the ~ sampl
Fc , one
,
,
1
u constant transverL S6 field Lor -of various gas media. On'the 'L
Card 1/2 other -device the voltage of_,the doubledfrequency E L ' W&S.Mea_L
2(4 'L

On the Applicability of :the Method of..Velocity Measurement 57-28-5-23/36
of Surface Recombination.by Means. of ,the. Change of:Semiconduotor,Resistance
in a,Magn6tic Field
sured, one of the~surface mediabeing subjected to the,action
Of a Bii.UlGidal transverse field with low frequency. The ob-
tai.ned results :show,. thatthe method.of:measuring:the surface
recombination velocity by means of the modification of,.tha COn-
ductivity of.the samples in a,magnetic field 'yields correct va-
lues of ~~ at a,modification of.the concentration of~,the re-
S
combination centerE which was also proved by grinding expeiiments.'..
If schangesbecause of the modification oi -thelelectrostatic
surface Potential, this method, however, gives:t,oo low.values.
This can be seen from.a direct o f -this method with-
omparison~o
the.bridge method of measuring the effective, lifeo The authors
thank Yu.F. Nov3toiskiy-Vlasov for his help. There are 1 figure.,
and 5 references, 4 of which axe Soviet.
ASSOCUTION:, Piziche-.kiy institut im. P.N. Lebedeva,A11 SSSR,' Moskva (MOSCO7~'.
Physics Institute imeni P. If.] Lebedev ussiz)-
AS.
SUBMITTED.- December,28, 1957
arcL 2/2 1 .Semiconductors--Surface properties

z
Cal
PAR At v
Ni
H 91 li's Imp
I.& I
ILL

On the Problem~Concerning the Nature of the Surface SOi/181-1-9-27/31
Recombination Centers-on Germanium
conductivity,on the transversal electric field in:the dark,
the interval between the two curves illustrates the value of
the steady photoconductivity.,Keaeurements were made on p-type
germanium samples with a resistivity og 20-25 ohm.,cm. The
maximum preheating temperature wSs 475 K. Measurements were
made in vacuum (10-'3torr) at,300 K. Figure 2 shows on a semi-
logarithmic scale the dependence.of the maximum surface re-
combination rate on the reciprocal.;iample temperature. The
activation.energy of the centers,levalusted from the inclin-'..',
ation of the linear.curve portion yielded- 0.2 the r
ev,2
maximum concentration in the saturation region '-,10 /cz
When assuming that a concentrationAncrease of therecom--~
bination centers is due-to.desorption of water molecules,.
the adsor tion,heat can be calculated as being 4-5 kcal/mole.
p
In the samples under investigation theratio of.the capture
cross sections for holes and electronsawas ranging from
2 to 100,,the recom bination levelB.ranged between 3.- 6 kT.
The results obtained~areutilizedlby the authors in order to
the-ir.surface model of.germanium and in order, to

S/181/60/002/010/012/0
~51
V:3 1/0 (11q31)1601 BO,19/BO70
A~THOR-, Rzhanov, A- V,
TITLEa Applicability of the Method of Steady Photoconductivity for
Studying the Dependence of the Surface Recombination.Rate
on the Surface Potential
PERIODICALi Fizika tverdogo tela, 1~609 Vol.:2, No. 109 PP.. ?431-2438:.
TEXT? An experimental method for studying ;the surface,.states of:a,semi-
conductor is described..It has been *tested fortwo, years.in the.laboratory~,
The.method is,based on the simultaneous measurement of-,the steady photo-.
conductivity.and the field.effect for,:largelsignals. The samples.were ir-
radiated with square 1 ight imp ulses, following one another at,a f requency Of
cps. The transverse electric.field,varied between'20,and'.100 cps. The.
conductivity of the sample was observed by-an oscillograph~.(Fig. 1). The
theory.of the method is given in detail. The method permits a study of,
thp dependence of the surface.recomb.ination rate,on the surface potential,
a particular advantage of the method.being:the short time'interval (1/10.-,
of, a sec'ond) required for.this study. This,is important because.ofthe-....

RVIANOV, A. V., Dr..,Phys-Math Sci. (dis's) "Investigations of

S/ 1 9'~/6 2/000/0621/04 7/096
3 J~:D D201/D301
AUT11'".--olas: Zvyagin, V. I. , Lobanov, Ye. M,.and Rzhanov, A. V.
TITLE: Differential resistance of germanium diodes
PERIODICAL: Rellerativnyy zhurnal, Avtomatika i radioelektronika
no. 2, 1962, abstract 2-4-12zh (V.sb.:Nekotoryye vop"r'.
prikl. fiz. Tashkent,- AN UzSSR, 1961,'58--~63)
TEXT: Astudy of the di.-Lf erential resistance R of germanium dio-~
d
des. The diodes were prepared by the method of fusing indium,,intol'-l'.
an elecuroq coilducting germanium. The resistivity of germanium.was
varied -from 3.5 to 35 ohm/cm. R %vas: evaluated from the measurements'
d
Irm
by a valve millivoltmeter with small a.c. voltage, (V~' superim-.
posed on the reverse d.c. bias, and from the Voltage drop across a
calibrated resistor connected-in series with the,diode. The resulis,z~
-,rpSUigations, at a frequency of 70,c/s, Vere'obtainea,by'.8itati-
-,nR of a large quantity~ofexperimental material-Ty-

S/194/62/000/002/047/0~6
Differential resistance.of,... D201/D301
ical graphs of the dependence of R on-Vv at different temperatu-~,.....
p d
.res are given, together, with log e Rd On.the reciprocal.o,f. tempera-:-.
1000
-es and a. table of values, of activa-
ture. for various volta.o
0
T~ X
tion energy calculated from graphs of semiconductor diodes made of-'.
material with different specific resistances. Graphs of dependence---.!"
of log (-t;' - lifetime of holes) on reciprocal of temperature are:
ep I p
also given for typical diodes and diodes made of germanium with a..
lower speci-E"ic resistivity. The graphs_ show the values of acltivati-',.,~,~-
on energy AE's at~ low temperatures and,.those for temperatures-high-1
0
er than 40 C (,!~E It is shown that the whole set.o.L experimental:.'
,data may be successfullydescribed.by the formula of,K. V. Tolpygo:-
and E. I.-Rashba (see ZhT Fiz. 1956, XXVI, 7), if one, assumes..,in.,it-
P -0eOT .Provided 6E ~E' at low,and AE A E at, high teppe-
ratures. I tfollows from this formula that R increases.with~de-
d

23~24
S/181/1 003/005/029/042
BIOB/B209
AUTHORS:, Rzhanov, A. V. and Plotniko.v, A. F.
TITLE- The surface levels inIgermanium according to data on the
photoconductivity in the infrared range of thespectrum,
PERIODICAL: tverdogo tela, V. 3:31 no- 5, 1961,~155T-1560
TEXT: The authors measured the photoconductivity of Ge samples which were,
.illuminated with intermittent light from an WVX-12 (IKS-12) spectrometer*,,
The amplified,.circuit equipped.with phase detector had,a:sensitivity.of the
3
order of 0.1 pv. -The.20 5 0.4 mm. large p-type:samples, had a.,resis-
of 25-30 ohm.cm; measurements were performed in a cryostat 'with:an
NaCl-window at a temperature of the samples of about 800K. The vacuum was
of the order of 10 mm, Hg. The results of measurements taken ina range,
between the edge of the principal absorption band and, 3.'4)1, are shown in the7.
accompanying figure. The results.agree with those of, other. studie's insofar'~
as-the concentration of-the surface levels an.d,.accordingly, the,photocon-
0
ductivity increases with the temperature of preheating up to, 500 K,~ but
Card 1/3

------- ---- ----------
231.24
S/181/61/003/005/029/042
The surfa2e levels in germanium: ... -B108/B209
decreases.(at energies of the light quantaJess than~0-5 ev) when previous7
ly heated to 6000K. The effect of, preheating and of,,.elemental,loxygen leads
to an:'increase in the concentration 'of surface~levels of one and the,same
type. The results obtained prove the existence,of discrete surface levels,~
near the middle of the forbidden band. The,rise of photoconductivity a t
quantum energies of 0.38-0.4 ev,oorresponds to an electron trahoitio4i f rom
a surface,level about 0.04.ev.belovt the,middle of the forbidden band to. the
conduction band. The subsequent d Iecrease in photoconductivity may be ex-.
to
plained by an electron transition from the valence-band. a burface.level
about 0.06 ev above the forbidden band.', The.holes arising therefrom under--:
go quick recombination with the,el:ectrons:in.the conduction band.. Thus, a:
negative photoconductivity,must,cor,respond.to this process if,Attakes
place. In order that both~phenomena appear t.ogether,,the Fermi level,has,,-
to be 0.02-0.04 ey above the middle of the.forbidden. band.-The decrease in.,
photoconductivity may also,be related to a decrease in the absorption coef-.,
ficient- Finally, the monotonic rise in photoconductivity at energies
above 0.42 ev is evidently,due to a system of continuous.surface levels.
.Preheating at 600'K changes,not:,only the concentration but also the charac-
ter of energy distribution of these levels. The authors thank
Card 2/3

The surfaced levels,in germanium B108/Kbq',~
V. S. Vavilov forhis assis-tance. There dre' l figure and~i4 references:
9 Soviet-bloc and 5 ndn-Soviet-bl6c.
ASSOCIATION: Fizichesk.iy institut inli. F.. N. Lebedeva AN SSSR Moskva

(Physics Institute imeni P. N. lo
Lebedev AS USSR, 1.1 scor)
SUBMITTED: NoveMber 28, 1960
'Fig.:: Photoconductivity (ordinate axis;

I
arbitrary units) versus energy--
of the 18 1.9 -11 I.J.45 1.7 3.1,
. 1,
II 1
I
,
.
_
exciting-light quanta (abs6issas: hv in:. I
~ -
ev and A in V0

after
Legend: .1 before heatin, ;J0
0

heating to 400,K,1 0
o6l1k, 4:~ 600 K,
3 5

o
3

3
after the act
.5 ,
ion of a high-voltage
CS

di t low

a

res ,
50

01o, 065 060-051050 0.45 0.40

..Card 3/3

S/ 1~ 6 61,/OO3/oo6/ooq/O31_
C B102 .8
201
C
AUTHOR: Rzhanov. A. V.
TITLE: Changes of the gurface charge on germanium during.heating.
oz.
I BPeslmens In vacuum
PERIODICAL: Fiz
ika tve-rdcgo tela, v. no. 6. 1961, 1718-1722
TEXT: Experimental results obtained -from studies of the surface-charge
properties of ggermanium are discussed along with effects-exerted on their
by heatin-. adsorption and descrption, and cti-lars. Moreover, it is shown-
that chanxes. f,_,und experimentally, of the total surface charge during
heating of,germannim in vacuum are considerably smaile-T.than-those one
might expect in vietv of the change of concentration of the fast surface..
states. A model of surface centers that takes account of this fact;iS
suggested.. It Md been already shown in previous papers (Rzhanov et al.
FTT I. vyp-9~1471,1_959; FTT III, ~7YP.3096!) that heating in vacuum.leads.
to a considerable r-oncentration increase of the so-called fast surface
states.. To. explain this, the water mole-cules in the oxide layer were,
assumed to neutralize. the surface defects acting as recombination or.
Card 1/5

24912 S/181/61/003/06/loog/031
Changes of the surface charge on ... B102/B201
trapping centers. During heating there occurred a desorption of water
and a reactivation of t, lie ceri-ters; t hu sthe concentration of the fast
surface states increased, and the surfaceebarge changed, On."he other
hands as has been -repeatedly shown. rhe water mole-,ules adserbed on Ge
themselves are the cause of a positive surface charge. (slow surface
states). The total surface charge, composed of fast and t3lovi.surface
states. determines the electrostatic surface potential of the specimens.
aw
the modificaticti cf whi-.h during heating ir- vacuum one may dr
'Conclusions as to the charge and t.he surface states. A study, of: the
field effect showed thar in a
L good vaiuum theaccumula~4cn, of surface
charge under the action of a sinusoidal transverse field is negligibly7
small. Numerous Ge specimenswere examined and it was established in all
cases that the changes of the 3urface,charge were not so. great as might,
have been expected in view of the charge change of the fast surface.
state.9 (caused by their rise of, concentration). Results'of measurement
are collected in the table for some specimens. The absolute value of-the,
charge of fast states I's, of course. dependent on whether these states_~~
constitute don.ors cr acceptors. The levels Nt and Nt and and,Nt.
3 4
Card 2/5

S i81/61/003/006/009/031
21~32 4
Changes of the surface charge on.- B1020201
orm aoh pair corresponds to another charge state.of: one.. and
t-o pairsi e
the same centex~ and, depending on the,position of these'ie'velsq- these,
centers constitute acceptors or donors, The model of surface-recombina-
tion centers is based on these and other experimental results. It is,
ao-iuffed in this ccnrection that at the intp'rfai3e between germanium ard
oxide layer there are structural defects. whose concentration is con-
siderably lower than 'hat of the surface atoms. To these defects cor-
respcnd,donor levels !situated well above the forbidden band; the-
ele3tron trapping crcss section upon these le-rels is taken to be small.
and oxyCen is 3cnsidered to be adsorbed by the defects lightly (and
L oc .3ely) .S,.zc;h defects are positively charged with 'all values of the
surface rotenttal and ~-,orrezpond to slow surface staTes. ~Oxygen ad sorp-
tion on suc-l-. defa,~ts is further assumed to have -a considerable effect upon
their proDertieg. The carrier 'craDring orcss seccion 4L5, rendered con-,
due - wate r ads ornt`cn, wh-le the donor level
-lit ~, G L
sider 'h- y
ysma -r thereb
lies %ye'l above -he forbidden band. , This ezplains the compensating
action of wa tle rt'destru~-tion of recombination states:in rre). :The model
(described here 11ngrear detall) appears as the likeliest but.not,the only.
way of explaining the experimental resul-'s (of. 1d.Lax.Phys.Rev,119,5,
Card 5/5

25682
3/181/61/003/007/004/02
3
'

B102/B2Q2.
urface recombination
where S is the surface recombination rate for small the variation of
0
thq maximum surface recombination rate vrith the injqction Ievel *Vecomes'.
manifest.. (4) shows that also,at,relatively small 6 9the miximur! 8~rf ace
I
. I . I
recombination ;ate'decreaseslyrith the injection level il f + X
2

itn
q
6

>i ch(-5~ e -inverse 'ibbqUality sign., Vii t
t and i~creasesvlith~th
h
~
kT ~ I I - .'- F ~q~
a 7~ +7C'
larg S decrease s-with'incre sing if t
>
max -2
' &n
with a further'.increase ~f S apreaches the value 36 -
N
p
t
p -n
In the following, these results are applied Ito ~Practioal cahes. k .,60mPPLrii6i
of-the theoretical results with the experimental ones for the two extiedle
Ilk
values ~_O.l and 6-4.3 shovied good agreement.~ The authors thank
A41L. Vollsk, Member of Warsaw University,' for assistance and advice.
Thera are 2 figures and 8 referencest 6 Sovist-b~oo,and'2'n6n-Soviet-bloc.
Thc~reforences to the English-language pu~licationa:read as -followsf
'
J,-p&*85vi957i G. I)ousmanii.
R. H. Kingston. Semiconductor Surface Phypicf
J. A~pl. Phys. 10, ~21 180', 1959.

Card
4/5
,

S/i
'i,/003/011/016/056
BlC~21/Bi 36
AUTHORS: Rzhanov, A. V., and Neizvestnyy, I. G.
---------------
,-TITLEt The influence of molecule adsorption on germanium upon the
parameters of the surface recombination centers
v. 3 no.: 11 961, 3317-3323~
PERIODICAL: Fizika tverdogo tela, 9 a
TEXT; The authors have already published several papers on, adsorption.
effects,. They have shown tha,i the density of recombination centers depends
in a compensat Iiveand rever.sible:manner on-the polarity.of the ads.orbed
molecules. The fact that the surface recombination qenters are~neutralized,
by'adsorbed molecules could be explained on the assumption of chemical or~'
electrostatic processes taking,place between adsorbent:and.recombination
center. In order to find out which possibility really holds the authors:
Iused a'field effect method to. study how the~recomblnation parameters changel,
when adsorbed water molecules are substituted by ether or-beniene. The
surface recombination rate, andf.the charge.trappad by.fast surface states:.
po ten'
were recorded as functions of.the surface tial. For this purposethe,~
-a-manium samples were placed in.a mica-holder with transpa-r.ent.'electrodes'.

S/'I
6yl/003/01 1/010/056
B
The influence of molecule adsorption... B1152 136
providing a transverse field independent of the liquid investigated. The,
whole arrangement was placed in a special thermostatic vessel-. The 3urface
recombination rates as functions of the surface botential.Y with-and
without heat treatment of the spe.cimens are sh-awn 44a, Figs. 1 92. The.,
trapped negative charge was found to increase-with inareasing f in a
weakly non-linear manner;,after heat treatric-~r (150000) the increase i;as
more rapidly. Themaximum surface recombinat_~_,. rated were found P.De
between 820 cm/sec 0 4 kT/4, c. f. Fig. 1) ard 1650 .cm/sec (3.0 kT/qj in.
benzene and between 4~0.cm/sec (5-1 kT/q) and 2 100 cm/sec (6.2 kT/q). in
ether. From the experimentsmadewith benzene It was found thatin the
nonpolar benzene the surface recombination nenters are activated in the
same manner as in vacuo and that the characteriat'.s of the re6lombination
centers are in no way affected by benzene. Iq ether, which is weakly
-e a t- the
polar, the surface recombination centers.ai c J vat ed_ i. same marl'-IP_~
as.in,.benzene or in,vacuo. Adsorption of ether leads only to a shift GI
the maxima,of S(Y (Fig. 1) from. +3kT/q (There they are for benzene oc
vacuum) to + 6kT/q. The results.indicate thatthe adso-xption o e u h e r
-germanium is a physical process~. The between ether and

s/18i 6i/ 3/1 0/056
00 0 11 /al
The influence o mo ule'adsorpti6n
f iec" BM/pi~B
eliy el'Li'c'tr st 'tic. There.are 4 figures, -1 table- d.
germanium is pur' 0 a
an 6
references-

5 Soviet. n cl',I no'-So'iet. Th' latter reads. as. foll iNs
a n v e 0 1
1502j-196o.
M. Lax., P hy s -Rev. no 5

ASSOCIATION -Fiaichie8ki~ institut im., P. N Lebedeva AN'
v
SR 14oskva
.~Imo

p c stitute ime'nii :P', N.
hysi -Lebedev AS:USSR* scow)
In
c

SUBMITTED, ay- 22~-
196,

'Surf 0
Fig.l. ac ere o - mb ination rate :as' -a- function of"the' s u if a_� e,'-. p*tentW.
0
-ting _011-and after he (2) -4060K
befoiie. hea, ating at K
0
450-K~W and 500 (5)~in'ether.

-bL
-Fig. 2. Th6 saime for anzen .. ....

32085
S/181/61/003/012/b20/028
Statistics of recombination in the 3108/3138
tate
(capture.of hol.es on the excited.level),, !,t concentration of
recombination centers with an electron on the Qxcited level (Capture of.
electron, N cone. of rec. c. without electron in their ground states
t
(electron capture on the excited level),,N cone. of rec..c. witha
t
.1
hole on their excited levelp,for hole capture. n +n t+N +X I
t -t total'
The subscript o indicates,.--quilibrium concentration. The r ere the
transition urobabilities. A general expression for the-recombination rate
.'is derived from the above formulas for,the case-concentration Of,
recombination centres is low and the excess hole and electron concentrd-
tions are equal.
NtCpCx (np - nopo)
U==
C (n-nt)-8p SE
n C~ I rn
C, PI) P,
I -f- r. . ~j (P -*--I-rp "I I P_f rp T (12)
This 'expression goes over into the Shockley-Read relation (Ref. 1L See
r. P ~R I/A

S/181/61/003/012/020/028.
Statistics of recombination in the B108/B138
b e' ow) f or small Jnjection levels and the conditions 1 C n*
~ ~) n 1 /r n
C 1~ /r , ji and p are the electron and hole concentrations,
p p
respectively, in the bands where the Fermi level intersects the excited
lsvel., The above conditions.involve the postulate that the carrier
lifetimes on the excited levels v V4 i ch(-5~ e -inverse 'ibbqUality sign., Vii t
t and i~creasesvlith~th
h
~
kT ~ I I - .'- F ~q~
a 7~ +7C'
larg S decrease s-with'incre sing if t
>
max -2
' &n
with a further'.increase ~f S apreaches the value 36 -
N
p
t
p -n
In the following, these results are applied Ito ~Practioal cahes. k .,60mPPLrii6i
of-the theoretical results with the experimental ones for the two extiedle
Ilk
values ~_O.l and 6-4.3 shovied good agreement.~ The authors thank
A41L. Vollsk, Member of Warsaw University,' for assistance and advice.
Thera are 2 figures and 8 referencest 6 Sovist-b~oo,and'2'n6n-Soviet-bloc.
Thc~reforences to the English-language pu~licationa:read as -followsf
'
J,-p&*85vi957i G. I)ousmanii.
R. H. Kingston. Semiconductor Surface Phypicf
J. A~pl. Phys. 10, ~21 180', 1959.

Card
4/5
,

S/i
'i,/003/011/016/056
BlC~21/Bi 36
AUTHORS: Rzhanov, A. V., and Neizvestnyy, I. G.
---------------
,-TITLEt The influence of molecule adsorption on germanium upon the
parameters of the surface recombination centers
v. 3 no.: 11 961, 3317-3323~
PERIODICAL: Fizika tverdogo tela, 9 a
TEXT; The authors have already published several papers on, adsorption.
effects,. They have shown tha,i the density of recombination centers depends
in a compensat Iiveand rever.sible:manner on-the polarity.of the ads.orbed
molecules. The fact that the surface recombination qenters are~neutralized,
by'adsorbed molecules could be explained on the assumption of chemical or~'
electrostatic processes taking,place between adsorbent:and.recombination
center. In order to find out which possibility really holds the authors:
Iused a'field effect method to. study how the~recomblnation parameters changel,
when adsorbed water molecules are substituted by ether or-beniene. The
surface recombination rate, andf.the charge.trappad by.fast surface states:.
po ten'
were recorded as functions of.the surface tial. For this purposethe,~
-a-manium samples were placed in.a mica-holder with transpa-r.ent.'electrodes'.

S/'I
6yl/003/01 1/010/056
B
The influence of molecule adsorption... B1152 136
providing a transverse field independent of the liquid investigated. The,
whole arrangement was placed in a special thermostatic vessel-. The 3urface
recombination rates as functions of the surface botential.Y with-and
without heat treatment of the spe.cimens are sh-awn 44a, Figs. 1 92. The.,
trapped negative charge was found to increase-with inareasing f in a
weakly non-linear manner;,after heat treatric-~r (150000) the increase i;as
more rapidly. Themaximum surface recombinat_~_,. rated were found P.De
between 820 cm/sec 0 4 kT/4, c. f. Fig. 1) ard 1650 .cm/sec (3.0 kT/qj in.
benzene and between 4~0.cm/sec (5-1 kT/q) and 2 100 cm/sec (6.2 kT/q). in
ether. From the experimentsmadewith benzene It was found thatin the
nonpolar benzene the surface recombination nenters are activated in the
same manner as in vacuo and that the characteriat'.s of the re6lombination
centers are in no way affected by benzene. Iq ether, which is weakly
-e a t- the
polar, the surface recombination centers.ai c J vat ed_ i. same marl'-IP_~
as.in,.benzene or in,vacuo. Adsorption of ether leads only to a shift GI
the maxima,of S(Y (Fig. 1) from. +3kT/q (There they are for benzene oc
vacuum) to + 6kT/q. The results.indicate thatthe adso-xption o e u h e r
-germanium is a physical process~. The between ether and

s/18i 6i/ 3/1 0/056
00 0 11 /al
The influence o mo ule'adsorpti6n
f iec" BM/pi~B
eliy el'Li'c'tr st 'tic. There.are 4 figures, -1 table- d.
germanium is pur' 0 a
an 6
references-

5 Soviet. n cl',I no'-So'iet. Th' latter reads. as. foll iNs
a n v e 0 1
1502j-196o.
M. Lax., P hy s -Rev. no 5

ASSOCIATION -Fiaichie8ki~ institut im., P. N Lebedeva AN'
v
SR 14oskva
.~Imo

p c stitute ime'nii :P', N.
hysi -Lebedev AS:USSR* scow)
In
c

SUBMITTED, ay- 22~-
196,

'Surf 0
Fig.l. ac ere o - mb ination rate :as' -a- function of"the' s u if a_� e,'-. p*tentW.
0
-ting _011-and after he (2) -4060K
befoiie. hea, ating at K
0
450-K~W and 500 (5)~in'ether.

-bL
-Fig. 2. Th6 saime for anzen .. ....

32085
S/181/61/003/012/b20/028
Statistics of recombination in the 3108/3138
tate
(capture.of hol.es on the excited.level),, !,t concentration of
recombination centers with an electron on the Qxcited level (Capture of.
electron, N cone. of rec. c. without electron in their ground states
t
(electron capture on the excited level),,N cone. of rec..c. witha
t
.1
hole on their excited levelp,for hole capture. n +n t+N +X I
t -t total'
The subscript o indicates,.--quilibrium concentration. The r ere the
transition urobabilities. A general expression for the-recombination rate
.'is derived from the above formulas for,the case-concentration Of,
recombination centres is low and the excess hole and electron concentrd-
tions are equal.
NtCpCx (np - nopo)
U==
C (n-nt)-8p SE
n C~ I rn
C, PI) P,
I -f- r. . ~j (P -*--I-rp "I I P_f rp T (12)
This 'expression goes over into the Shockley-Read relation (Ref. 1L See
r. P ~R I/A

S/181/61/003/012/020/028.
Statistics of recombination in the B108/B138
b e' ow) f or small Jnjection levels and the conditions 1 C n*
~ ~) n 1 /r n
C 1~ /r , ji and p are the electron and hole concentrations,
p p
respectively, in the bands where the Fermi level intersects the excited
lsvel., The above conditions.involve the postulate that the carrier
lifetimes on the excited levels v V4