SCIENTIFIC ABSTRACT RYVKIN, S.M. - RYVKIN, S.M.

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• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

FD
USSR/Pbysics Superconductors -3127
C~ _' ;.79
rd 3j Ptib.f153
2/19
Author Mashavets, T. V.; Ryv:kin., S. M.
T-itle Influence of heat treatment upon lifetime of non-ground current carriers
77
in germanium (the kinetics of the formation of defects during heat,treat-
ment),
Periorlical, Zhur. tekh. fiz.,.25, No.9 (September), 1955, 15304543
Abstract The authors investigated the influence of heat treatment at relative
"low" temperatures (4oo-55poc) upon~the lifetime of non-ground current..
carriers in germanium.. The lifetime decreases with,increase of tempera-
ture and duration of the heat treatment, which is explained by the'oc-.
currence of defects:that play therole of centers of rec6mbination.~On
e bas' e ur-
t
h is ofa study.of.the kinetics.gov.erning..th process of, the, o,cc
rence the authors,obtain data,on,their energy structure,., They show.tha
t
the process,governing the occtrrenceof defects in the investigated, re-,
gion of temperatures differs from the process governing the occurrence
of "thermal. defects" ordinarily appearing in.germand:um at higher tempera-,
tures. The authors' aim has been to investigate the occurrence during
heat treatment.of..so called thermal traps (recombination centers) and,
also the nature 'i.e. energy structure) of defects associated with these

SUBJECT USSR PHYSICS CARD 1 2 PA 1681
AUTHOR RYV,-K-l-ff S.M.,
TITLE inks "Secondary" and "Passing-Through" Photocurrent
A.Semiconductors.
PERIODICAL Zurn.techn.fis,.L6, fase. 11p 2439-2447 (1956)
Issued:., 12 / 1956
By the.present work the attempt is made t1o show that putting the secondary
photocurrent equal to that which:passes,through is wrong., The terminology
using the terms "primary" and "secondary ~photocurrent is described as
irrational if used for describing pliotoe"lect*ric phenomena in.semiconductors._.
On the kinetics of the Phot6aurrent: If the semiconductor samp'le is irradiated
by'a constant.light current from a certain moment onwards, the relaxation-like.-
~process of transition to a new,:stationary co Incentration of.charge.carrierst,.
which , occurs as a result of,: ionization,~ is determined in'the :general case by
-~two phenomena:.1.) By a change of I concentIration by elIectron.transitionWinlhe,
"energy spacelt, i.e. on-the.occasion'of ionization and recombination.,
2.) By modification as a result of the motion of the carriersin the coordinate
space, i.e. by diffusion and drive in the electric, field. Both processes take
place simultaneously and with reciprocal interaction. However, when evaluating.~~
the influence exercised upon the effective.relaxation~.time of each process, 1he
e:Lgentimes of both processes may be-investigated separately.
On the so-called "Primary" 2hotocurrent; The. trans it-ion '. carrIeIat..(morelexa,ctly
its initialstage) according:tolhe terminology used by GUDDEN and POHL,

Lrn.techn.firi,26 1956) CARD. 2 2 Pi 1681
fase.11, 2439-2447
corresponds to,the so-called "primary"icurrent. On the occasion of the
occurrence of diffusion-drive-equilibrium, FERMI'S quasi-level in the semi-.
,conductor., is reduced, and the relative influence exercise&.by the, carriers
movingfrom the cathode into the crystal increases. Hereby the basic condition
for .the "primary" character.of the current is gradually abolished. ~ If equi-
libiium in the energy space is rapidlyestablish -ed, the relax.ation.process
occurring on the occasion of illumination is reduced to the fact that the
transition current goes over.into the passing-through current, Thus the,
establishment of equilibrium in the coordinate space is fully characterized.
'On the so-called "secondary" photocurrent: If no particular assumption.a.are.
introduced (if, e.g., the barrier layers at the contacts, very strong fields,_,
etc. are not taken into account), the photocurrent occurring immediately,after.,
illumination can only diminish by~.the establishment:of.diffusion equilibrium,'',
with the electrons. The photocurrent observ Ied by GUDDEN and POHL on ZnS
cannot be put equal to the passing-through current. In conclusion several
.~technological problems are.discussed.:According to the~uthorls opinion the
-old,terminology must be dropped._It is necessary either to introduce new
terms which characterize occurring phenomena correctly orto change old terms
accordingly.
INSTITUTION:

SUBJECT ~USSR:/ PHYSICS CA-RD I PAI- 1821
AUTHOR
TITLE The Forming Me6hanism'of ImpulsesJn Crystalline Semiconductor
Counters. (The'llotion..of Charge's on the Occasion ofan Impulse-:
Ionization in Semiconductors).
PERIODICAL iyurn.techn.fis, 26, fase.12, 2667-2683 (1956)
Issued:. 1 1957
The present work intends to determine the,,basic qualitative properties of the.
forming mechanism of,impulses in crystallinesemiconductor counters, as,well,as
to carry out an approximated quant.itativ Ieinvestigation of this problem..At first,
several questions relating to schemes-were dealtwith in a precise'form_From the
point of view of the processes which'take place in the'sample, thereal.scheme-,
can be replaced by another.in the-case of which the voltage on:,the sampleis
kept.constant. At the saMetime.,computation of the charge in the impulse..in-1he.
real',scheme can be replaced by,computation of the excess electricity which~is a
result of ionization in the outer.chain of the,,second scheme. In~this_connection
investigation of the problem is confined to computing the additional-current i
in the exterior chain of.the scheme on the basis of.the~investigation of the pro-
cesses that take place on the occasion of ionization inside the s,ample..The semi-
conductor mechanism of impulse formation is then examined. The process is.analyzed
which'takes place in.a crystal with finite conductivity before excitation immedi.
ately after ionization..A. very.simplellflat" case.is investigated on the assumption
that the.domain in which ionization took place has the shape ofa parallelepiped.

iurn.techn.fis,26,fasc.12,,2667-2663 (1956), CARD 2 3 PA 1821~
it is assumed that the current carriers produced on.the~occasion of.ionization
Nill within short have an energy.,distribution corresponding.:to lattice temper-
ature as-a result of the,collision, and.will hardly be dis.tinguishable,from..
the thermally ionized current'carriers. Ionization and the establishment, of,
quasi-equivalent distribution areassumed to exist at the moment.,
~In the following an exact analysis of the question as,to:the mlechanism.of impulse
formation is given mainly in order-to determine the criteria for the transition
of a formation according to thescheme of prima Iry current into such.according
to the scheme of.a passing-through~current, as wellas to compute the-depend-
ence of,the amount of the impulse on the conductivity of the sample and,,other
~of its parameters. Computation of A i passing through and 9 (diffusion-devia-.1.
tion-equilibrium) is for a general casevery difficult..Therefore only,some,-..~,
special:.cases - of the weak, medium, and strong field - areinvestigateds and.
for,these cases criteria are set up. Besides, the case for -C Aff 93SR
(Leningrad Physicai--Te,,~hnioal Inatitute AS USSR)
SUBMITTED: Augu -21 '957
CadzitLm-celenium
s L~mz- -Fl-opevt
Card 2
2

-28-4-1#39
7
5
AUTHORS., Ivanov, Yu. L. Ryvkin, S. M.
TITLE: The Formation of Current Oscillations~in Germanium Samples
in an Electric and Longitudinal Magnetic :Field,(Vozniknoveniye
kolebaniy toka.v obraztsakh germaniya, pomes6chennykh v
elektricheskoye i prodolln,oye magnitnoye pole)
PERIODICALg Zhurnal Tekhnichesk9y Fiziki, 1958,'Vol. 2.8, Nr 4: PP0774-775,
(USSR)
ABSTRACT: The authors determined current fluctuations in some germanium-
-samples through *hich a direct current passed.and which were..
placed in a:constant magnetic longitudinal fielA.,(magnetic
field parallel to the current). Under certain.conditions the
forming fluctuations had a shape near to the sinosoidal
line with a frequency of. 10 nd Th
15 kilocycles per seco e
fluctuation character depends on quite a number , of circum-

urre
stances. Thus fluctuations only formed.at a- c nt through
the sample different flDm zero and increased according to
amplitude and frequency with.an increase,in current.'Ana-
Card!j* logo
us dependences~were~also observed on the.magnitude.of.the'
l

57 28-4-14/39
The, Formation of Current Oscillations in Germanium Samples in an, Electric
and. Longitudinal Magnetic Field
magrietic,fieldo In spite,of zinc-6ontacts,the..voltampere~
characteristics in the investigated samples d if f ered f rom
a linear one. The fluctuations formed -in one as:well as the:~:
other current direction were more marked when the. direction
of current correspond to the lower resistance.of,thel samP16.F
Fluctuations only occurred in the case of. an exact agree-
ment of the direction of the magnetic field. with,the axis~ of
the sample. An intensitve illumination of the samples led
to an interruption of the :fluctuations. A certain drop in'..
temperature in the samples7_ however, led to. a n in,crease of,
their amplitude and frequency..An etching of the samples
in hydrogen peroxide promoted the formation and- the stability
of the fluctuations. An increase or decrease of the ampli-i
tude of fluctuation connected with any.change,,of.the experi-:
mental conditions in all,cases led to the correspondA
ing 3-
crease, or decrease respectively of the &-quency of,: f luctua-.
tionw. There are 3:figures and 1 reference, 1 of,'which is'
Soviet.
Card 2

On the Influence.of Surface, Treatment of Semicon- 57-28-5-2/36
ductors on the Magnitude and the Spectral Distribution
o fPhotoconductivity.,
vacuum and in air, as.-Pell as by means of a short ~exposure j
to a gas discharge, The results of the investigations
.apparently permit to draw'Lthe follovino conclusions, The
strong photosensitivity.at the surface as well as a strong
dependence,of the sensitivity on the treatment of the, sixr..
face are determined by the strong influence of the recom".'.
bination processes near the'surface~ Theserec-ombination,".
processes can influence the phatodo.nductivity,and modify.
the phenom-enological~emission.'(fenomen6logidheskiy vy
khod). As an increase of,,photoconductivity is accompanied
by an increase of,dark c6nductivity,it can be assumed
that the investigated kinds of treatment:primarily influ-
ence themagnitude dnd the sign of the zonal curvatures..
nearthe surface. The experiments conducted,, however, can-
not" furnish,a basis for the evaluation of . partirula-r fea-.-
tures of the mechanism. The role of the recombination pro-,
cesses at the surface is Trell investigated in germanium?,,
silicon and similar~substances, where the deterininati-on of
Card 2/4 carriers hot in equilibrium is only possible af ter a, s-,,ectial

On the Influence of Surface Treatment of Semiconductors 57-28-5-2/36
on the, Magnitude and the Spectral.Distribution of Photo-,
conductivity.
treatment of the surface.,It appears, thatthe recombina-,
tion processesalso play an important AB'le in other-semi--
conductors. The experiments also proved the, neces s ity_:"of
neyr effective methods for the,cleaning of,Ah6 surfaces
of the semiconductors-This would presumably make it':
possible to increase'.the photos ens itiv ity 'ofnume r9us
substances, whichin spite-of their stronrCabsorpti Ion -, are
considered,not photosensitive or only Tfedkly sensitive.
Therefore the experimental results,verify.:tlie~fact,~tkiat
the,two.basi,c anomalies in.photuoconductivity -:the ",in-,.
active" absorption of light in,some.substances as well
s the reduction of photoconduct' pth of,.
a ivity in the de
the absorption band - can to a considerable degree -.be
explairied.by one cause, that is to say,by intensive rel-
combination-type processes, which are.considerably in-
tensified near.the surface. The authors express theirs
Cara 3/4 gratitude to the student of Leningrad State Universi ty

AUTHORS: Strokan, N. B. 57-28-6-5/34
Tuchkevich, V.' M Chelnokovy Ye.
TITLE: Silicon Photodiorl6s, f.Kre,mniye-vyye fotodiody)
PERIODICAL: Zhurnal Tekhnicheskoy Fiziki, 1958, Vol. 26, Nr 61~
pp. 1165-11068 (USSR)
ABSTRACT: Inthe.present report the results obtainedby investigating
the possibility of.utilizing silicon p-n.photoelements,~
for the purpose,of transforming light signals into electric
signals: in~ th.q. photodiode regime are described.,It could~be
con
taken for granted from:the very,beginning that sili
photodiodess which aze of somewha,t.lower,inte'gral
sensitivity must offer some advantages.compared to-,:~
gp.rmanium photodiodes (reference 3)i viz - a ~,,lower "dark
current', and a lower degree of inertia. Further,, the,
results obtained by in~re6tigating:the basic prcperties
of the ailicon'photodiodes LFTI produced in the.laboratory
ity of samples.to the light
are described. The sensitivi
of the, incanaesoent -amp with a colortemperature of,,the
Card 1/3 filament of -..,285000 fli)ctuated between 5 and-7 mm/lumen

'AUTHORS: R,~_~k Strokan, N.~ B'.. r 57-28-6-6/34
TITLE: On-the Kinetics of Phototriodes (0 kinetike fototriodov)
PERIODICAL: Zhurnal Tekhnicheskoy Fiziki, 1958,,Vol. 28, Nr 6,
pp- 1169-1173-(USSR)
ABSTRACT: Phototriodes can be used as highly photo-sensitive
means transforming light signals into electric signals.,
It is therefore of particular interest to studytheir
inertia. During the first months of,1957 the-authors:-,
the
e
produced samples of g rmanium. phot6triodes,in,
laboratoryg which had a sensitivity of 1 F 4 amp6res/:
lumen, a dark our nt.of-500 700 icroamp6res
m
Me
(saturation remains up to -_,P57), and a sensitive surface:
of mm2, (reference 1). Besides the authors, also
engineer N. F. Ragozina and laboratory worker,!-. A. Lebedeva
assisted.,in
producing the samples. The high sensitivity
.
...of phototriodes is known to be connected with the process
of amplificationof the photocurrent which'takes place in
them. The kinetics of phototriodes was investigated.by
Card 1/3 means of an apparatus w1hich-is shown.in form,of a,

On the Kinetics of Phototriodes -28-6-6/34,
57,
schematic.al drawing (figure:2). Determination of them
quality of the,time constant was,carried out by the
method deyeloped.by TolstoyLand.Feofilov. (reference 2)~:_
on the basis,of the principles of1he.substitution scheme.,
(reference 3). Results are,shown by a table. FroWthe
oscillogram worked o-ut by V. V. Makarov, student of the
LGU (reference 3) it may.clearly be.seen that~the rapid'~-.-
relaxation of.the collector current, to be expected'on the
strength of theoret
-1cal argumentation and a.slower
relaxation of the potential differences.on the poin Itof
emitter transition,actual"y:take place. Int conclusion_ iV.':.~
is mentioned,that in the case of.phototriodesla working--
regime which is analogous toLthe so-called "hybrid regime,.'
of photoUodes (reference 5),is possible. In'this, case
xelaxation has 2 domains: a "phototriodell domain atlow,
values of.the rhotocurrent. and a ,'valve' domain",,which'
corresponds1to high values of the photocurrent. Obviously.'
the'llvalve domainl!,is possible in phototriodes only,inthe'
case of "asymmetry" durin ,ggeneration of the.photoele,etro-
motive force in 6mitter-and collector transition
*pical'-
'Card 2/3

SOV/57 -28 -9 -2
33

A Stro'lkrzm, N. B. Makovskiy, L. L.
~jf zhe Kinetics of Photovoltaic Cells Wi i t b-
j.umctions (K voprosu o kinetikeve-ntillnyki~

m
s elektrozino-dyrochnym Derekhodo
Vol. 28
I --,qk~,n4ch--koy fi--iki
Nr 9, pp- 1671-1882 (USE-a)
1958
,
t

A F,T

er-
;1" is is :~i ~,C lie kinaties of the photovoltaic cell 0
a io
-r. No limitations nr.e imposedon.the r ti
E; H (wher a C denotes t.he cap city of th
a e

at zer--~ vcltage, and R its resistance) and of
0
-am o~a, a -d
-Y Is, R. The downx :r -loping branch of the relaxation'
'ig
c -.,z r.-ei wr as t, t ed In the first section qual4tsbive conq,d-
7
r-- t -i on z; bearing cn the kinetics of av special cases are:
Tx .2e t C .1 r- C h 2 i sis investigated a:~ t. c,S qaant-i-
-u
--c e C n 'he experimenta I ~,d is dc-

the theoretical r tilt, Comnsr'd
c b ut -n n e c t iA e-
w fni~_, br nich. et f
E-x r im evil. zThe downvard-sl-~p a C
t,v e, --z~ e a4wuming f f er a. n s

3 od
In reference ri
Z M3 U

i 8 1D f P h t v v o a c C e 11 s 'N i t h Elect-ci-iicic Jucct~,----7.
f
f 4
zi small capacJ,:.t.;ve currents) are no~ .5at- a d t f , E! I U M I,
i. ff J o J. e ,-. t 1 y h 8 h Li s ac t on ~:vf tjjZ.
h uz
CT-t-,Va 1.1, cz t I I I determined onij by relaxation. This
-U, he ~-Iata for the determination of the li'e
i z)::* Ila m ca. rr sions were sub-
i rs. These conclu
s L n~ JLa t by exper.-menta. From the slope of the rectilinea.--~.-
it was found, that the levels of
ov&d by 0,23 eV from the bound-
art~ elft
zone. There are 10 figures and 8 refer-
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PH ASK Z104K i~XPWLTATU)N 30V/j 140 4
Akademlya nNuic Ukrainakoy 3:11t. InalAtut rizLkl
PotoolfiktrIaheaktyu I ysvteniva v poluprovadnikakhl
pervago v4esoyu--noAo 4nv,3ahW0n'Ys PO fOtD-1~.ktrIqho3k1;x
F,-
I Optlaheakin: yaVlantynm v Pnl[jPrAvM'1"tk'qkh' g. Kiyev, 20-26
noyabrya 1957 g (Pnotoolnocrto and Optical rnnnom,tnft in Semi- f
conductoraj Trannnotlona or the Virat Conrorene" on Ptintoollectria
and Optical Phonomona in Ne-miaonaun tars ... Klyav, 1959. 403 p.
4,000 copies prlnt~d.
Additional Sponsoring Agencys Akndumlya nauk 3:13R. Prezi4lum.
Kominalya po poluprovodnik5m.
Rd. or Publishing Houses 1. V. Xtatoh; Tenn. 94.: A. A, Matvayahuk,
Houp. PA. t V. Ya. Lhmhkarnv, Aaftamictan, Ukrainian SSR, Academy
of sciences.
rURPOSEt. This book In Intended Car Scientists in tho Ciald or numi-
conductor Alan. Solid state opectrosenpy, and semiconductor
'
-
w-UT -0a t~A_A_Ed WtVi-ned WC
Udn to j
,~
devices. Th collection fui
univerattlas and InstItittan or, htf%nr - tonnn teal training

V041411zLng in'the phyalaz and tecrLnIcal application or sami-
*
conductors.
COViMAGSs The collection containa reports and Information bulletins
(the latter are indicated by natnria" road At the First All-
union conrerenca on Optleal-und Pherjolactria Phenomena in Soml-
conductors. A wide scope of probl=3 In semiconductor physics
and technology are conaLderods ptlococonductivicy, phatoolectra-
7 active forces, optical proportieb. photoelectric calls and
photorealstars, the actions of hard and corpuncular radiations,

the proportion t thin films and complex 3cmiconductor systems,
a
by E. 1,
eta. The materials were prepared Car publication
Ranhbor, 0. V. 3nitko, X. B.,Tolpygno A. P. LubeftenUovand M. K,
Sheynkman. References and dinauszlon follow each article.

Orono, Yo. P., and _M
A U:mllncarenon or C'J3

Phatoolecte, Iis and optical Phenomena (Cont.) SOV/3140
Crystals at the PASO Of the KkinA~sor
tlo
a
[S
n
p
ctrum)
p
Th ads)
'
63-
Oros* YO P A A Ka I
A21X&nekly, and
'- Structure
of S
;l go~tcc;
t
~
r
p 4
n
"'V'ty CUrVeS Of CrYAtA15 At Low
?"peratures (Theses) 66
-IOmO OPtlaaa and Photoelectric Properties
-
or rolycrydt&llln* CJ36 Layers-
,.
74

OU'
and Pe ritlea of
CdSj, C
fhotocanducting Ingle C;7atAls (x4l)
Khansevarov.~ R YU a- and Z.
ar-tho WI4tA a th;' __H_.ASOyOV. Dependency
W
UIT
F
4 a On uO`pOA77t`1'WQf CcIS-CdSo
301i4 Solutions-
95
:nd The Generation or an
,p
Ph
.
-Oscillating t lactric Current in CdS_ and C430 Single-
1, Crystal Photorsointors
card 5/16 96
Machanlam,
U a
i
'
n
D
g& In staz rauffrWrF-Dirring the,
formation of
&~Ivxrough Conductl a Channel'
f

67392.
Sov/18.1-1,-,9-10/
~3 1,
AUTHORS. -Arkad ~yqva,_14E~.
TITLEs Investigation of.the A4~esion_Levels,in Poly ryetalline
Sb S j'and in Single WCrystals by, the,Meth6d o:'the Trod-rmo_~.
stimulated Current
PERIODICAL; Fizika tverdogo tela, 1959, Vol I :Nr'g pp 1'57 13 0'
9 8 ~(USSR):,
ABSTRACT; In continuation of a previous paper (Ref 1):the present
article offers.some experimental,result5. Figure 1 snows the,
temperature dependence of the th-ermostimulated cur_ren-,'._ Irl
Sb S , figure 2 shows the same in selenium. Both ~samDles ha ve,
2 3
p-type conductivity. The heati a Q1.0-.5 deg/s
ng r te,,wa, ec for, the

former and 0.2 deg/see for7the latter. The rin'os't;
the
current in the former exhibits two maxima at.T ~-AWK and
2 180 0K, and three in a Ieleni um (115 0K 16 5 'K, band 18'0' K).
An evaluation of the adhesion level position,yields:.for
Sb S ME 0-33, and_6E -- 0 '39 .ev, whenasr-,aming-the effect-
2

Card.1~2 ive mass,,of the holes to.be equal to the mass 'of..free

1_2 0 01 673913
..31
AUTHORS: Vitovskiyp N. A! I Mash.ovRIEL'I __TA .5.
TITLE: Determination of,the Number of Acceptor Levels of Defec'.8
Occurring in.GermaniumvUnder the Action of Gamma Irradiat4

PERIODICAL:
Fizika tverdogo, tela,' 1959,.Vol, 1, Nr 9, pp 1W 3 6
(USSR)
ABSTRACT: The radiation-induced formation of-structural defects stable
at room temperature:had already. bee h investigated several
times, but not.~all :the problems related:therewith are as*.yet
solved satisfactorily,. The'present paper,offers* a contribut-
ion by discussing bhe possibillities. of a' complete analysis-, of .
the energy je-Yels of,the'-defects and by, publishing experimental
~Hall
r.esults,concerning th.e-,temperature dependence of e.
coeff idient R. of, ~,n-t~tk germanium.. irradiated by. Co.: _..arrays.;
An analysis'of::thes~e-,rbs lts 't eci
U, -permi s a pr se determination
of the number,of,acceptor.levels.belonging.to one --radiative
defeat. To investigate-the temperature dependence 6f~the
carrier concentration 3n,the,presence of,, mul tipl e -charged
centers, :the authors,theoretically investigated a~level scheme
of a defect (Fig 1), with n in the'condue'ti n band considered
0
'
Card 1/3 2a). In this connection the
to,be~composed of four,parts (Fig

67399~
SOV/181-1-9-2
3/3 1
AUTHORS: Arkadlyeva,.Ye. N.9.Ryvkin, S. 11.
TITLE.- Investigation of Adhesion Levels in Sb Be by the Method of
--3
the Thermostimulated,Current-
PERIODICAL; Fizika tverdogo tela, 1959 Vol 1, Nr 9 PP 1460 1463,(UsSR)
,ABSTRACT., If adhesion:levels. are occupied,.by carriers,st low t emp er
atures, this condition is:conserved for a long.time..Vlith
slow heating1he carrier'concentration ris.es in:the allowed,
.,zone"dn the same wa jr,. as- the current .(if a' fieldis applied
This boost current-which is.higher than dark current.is
defined as thermostimulated -kn investigation of.thermo-
stimulated.currents allows ihe estimation of-position and,
oconcentration of~ihe adhesion levels. This method is specially
applicable to.poorly conductive and photosensitive semicon-
ductors..'It had already been utilized'for,:the investigation of.

CdS, CdSe, HgJ 2i an efs 1'11).~The present,paper.offers
4.ZnS (R.
the results obtained for the single Bb Be ~crystals.:Investi g-

'card 1/#' ations were conducted in the temperature range of f rom. 180 to

67399

Investigation -Se by. the Me
of Adhesion Levels in Sb thod SOV/181-: -~-W3'
2 3
of the Thermostimulated Current
0 and 2- as t ''the temper-
~420 C. Figures I and 21,~show samples 1
~ature,dependence of the thermostimulated.~cu~rrent,.~,.(a6lid,curve)
d*
at curve).-The curves, 'were recor ed
and the dark.c re ddshed
pr
by means of a recording-device of theIype EPPV-51, which ex-
-12 -7
hibits.a sensitivity"varied within~wide.limits (,~-11 0 -;~~-10
a/mm).' The.the'rmostimulated.ourrent,shows-,char4ateristic;
one.withmaximum. at,115, 150, and 190"K. An est.imation:
fluctuati
,
of the energetic position (6E~) 'and the.~concentration
(k) of
the adhesion levels is made ontheassumption of,the very slow
hea~ting'having.a',quasiequilibrium%chairacter, so that the Fermi
ilevels~for dhesion levels and zone re the same.~:It can
quasli a a
be assumed furthermore that thie.quasilevel coincides.with the
adhesion level in the case.of temperature T corresponding to
P
the th6rmostimulated current maximum.;!!~E kT 1n
M
P e._U ...... _
P
kT ln liblds, where P isIthe effective,leveldensity
M

Card 2/.' in the valence.bandj,,P'is.the hole concentration in the valence

x*1 7700 66287
AH
'AUTHORS. Ryvkin, S. IA.:, Konovalenko, B. M SOV/181 1-11-2 /27.:1
TITLE-, On the Dependence~of Induced Conductivity of Cadmium
Sulfide on the Ehergy of the Erciting El6ctrons
PER110DICAL: Pizika tyerdogo telat 11959, v,ol .1 Nr 'IV PP.1757-1761JUSSR)
ABSTRACT: According,to reference 11 it was jointly established with
Yu. S. Smetaanikova.that for 2 to 30 kev,electrone with
increasing electron energiesq- but with a total electron
current, intensity, whicli: remains at the.same levelt the
reaches a
induced conductivity,of the CdS saturation,value,
i.e. that this does notincrease any more starting from
a certain, electron energy. TheAnitial point of the
"saturation" is not identical for.different samples,
Additional investigations (Ref's) established. that with
small electron energies the decrease o If.the induced
'conductivity is related-to thefact.that.theelectrons do
not deeply penetrate into the.crystals'ana therefore the
recombination processes occurring:on,the surface of the crystals
have aa increasingly importantinfluence. Other authors (Ref 3)
carried out similar investigations,on "voluminous"- mono-
Card-1/2 crystals with 30 to,60 kev-electrons.1heir measuring.results,''.:

66706,
sov/lo0_4..8-27/a5
0 p t i muni Operating Conditions for the Photo-d1odes sed With Small
Signals
of +20 0C and -78 0 C, while Curves are
IC l f2
the "illuminatio^nt" characteristics at the same temperatures.
The curves are calculated for a.photo.-diode which hgS a
".dark" current of 8 jiA -and the resistance R1 .> 10
at room temperature. The quantity R is represented,by
O~
ctZ a , where a . is the slope of~the '!dark" current-
voltage characteristics at 9 =:O This angle a at'
2
0
the room temperature is equal to 90 while at low
temperatures. a. a and tends to zero. If the device
works as a photo-diode with a load characteristic
the load line intersects,the characteristics
R ctg
I and I in the saturation region;, consequently,at:
T f
both the low and the room temperatures, the,output signals
taken from the device,is the same. On the other hand, if
the diode is operated.as a photo-electric source, the.
intersection of the load line i),rith the., characteristic
Card2/4 occurs in the saturation region only at the low temperature.

66706
Optimum Operating Conditions for the Photo-diodes Used with Sinall
Signals
In this cas.e,.again, the output. signal is equal to that.
obtainable in the photo-diode operation., From the above,
it follows that the photo-mdlode can be operated as-a
photo-electric source, provided it is maintained at a low
temperature. Under these conditions, 'it should be expected:,
that the noise level% would be. ver-y low. The above con-
clusion was checked experimentally. The.principal
experimental.characteristic.ifas the relative sensitivity-
P which was d fined as the ratio of th out t signal
e e pu
t
obtained from the device as a photo source and as a po o-
diode. This ratio can be defined by Eq (10). 'The experi--
mental dependence of P on temperature is shown by,the-
solid curve in Figure 3. The dependence of P on tempera-..-
ture for large signals is illustrated by the obtainedline.-...
in Figure 3. The noise in the device when employed as a
nhoto-diode was 0-5 niv $while when used as a photo- el ectric
source,,the noise was 10 JLV. The in- rtia effects in the
e
diode are illustrated in Figurp 5, where the first
oscillogram refers to the phot6s-dlode. operation, while the
Card3/4

240)
AUTHORS: Ryvkin, S. blob Strokan, N. B, SOV/20_124-5-20/~21:~
TITLE: On the Problem of the.Relaxation of
'Non-equilibrium Conductivity in Recombination Through
Traps (K voprosu.o relaksatsii neralvnovesnoy,provodimosti
pri rekombinataii cherez'lovushki)
PERIODICAL: Doklady kkademii nauk SSSR, 1959, Vol 124, Nr 5,
PP 1034-4-037 (USSR)
ABSTRACT: The present paper describes the results, of an'experimental'..,
investigation of the theory for the case of few traps for
arbitrary injection levels. The f.rst part of-this.paper
deals with t~e theoretical inves-..,,Lgation, in'.the course,
of which the authors determine the time-dependence:of them..
non-equilibrium concentration of the carriers for
semiconductors with a type of simple traps,11. The scheme
of transitions corresponding to this case is described.in
form of a schematical drawing, after which the 3,.kinetic
equations and the neutrality condition are written down.
If the total change Am of the. concentrati-on of electrons
in the traps is negligibly small as against n and pl,
Card 1/3

On the Problem of the-Relaxation of SOV/20-124-5-20/62,
Non-equilibrium Conductivity in Recombination Through Traps
(in thepresent paper thesystem.of notation of,W.
Shockley (Ref-4).is Used),, it holds qualitatively that,
during the main.. part of the monotonous. relaxation process-
also dn/dt. a'nd,dp/d,t mu'st,be.prac.tio,ally equal:to.each
o,ther. In thehere investigated case of a.small-'~um'be'rof
traps 1i-fetime:ldepends only on the conc"entratiIon of t~e'_:~
non-equilibrium carriers. and the value of.lifetime':at
that instant is equal to the steady,lifetime,at the same
steady concentration.. A diagram shows the-rel
axation
curve for the injection level n An P
steady 0.
for the cSse T 5(Shockley's system,of notation),
At the beg"nnizg of relaxation the rela atlori.cUrVe is,
X U1
similar to the function e ~/_"Of but.with':increasing...
recombination itbecomes.ever more similar to.:the function'
Thistransition takes place gradually without
any salientpoint, The second part of this.paper,aeals with',
exDerimen.tal ~3heoking. The experimentally found'CUrVeS
for the decrease of photoconductivity agree qualitatively
Cara 2/3 with theoretical results. In the case of asuffi3iently

8 69
The Influence of Adhesion Levels on,the S/181i 60/002YC3/28/028:
Rf-laxation of Photoconductivity:in CdS, Boo6
iBO17
,single Crystals
obtained by:investigating the iltr'uell.quantum yield.of the,.photocurrent in,~
as dependent on-ihe.excitatio .n 1.evel. The initial: stages of Ithe
increase of the photocurrent were examined by means,of.an instrument:_
,schematically represented.,in Fig. I- ~The'instrument and'the measuring.
technique are described. Fig.',2,shows the shape of the photocurrent'curves-
the first 50 msec for.various I irradiation,intensities The higher
theintensity, the steeper,the rise,of,.the,curves and the higher,:the
.relative yield. Fig. 3~,shows:a typical oscillogram for..one of ,the ,samples.'
Fig. 4 shows the growth.ofa,curve with a puls.e-duration,of.10 jisec. . ,it
indicates that the steep rise takes place during thefirst, microseconds.
Hence, rapid processes proceed.at:the first stages of formation of..the,
photocurrent. The results obtained inthe experiments concerning.the.~'~
characteristic features of ~photocur rent relaxation can be.explained in
the simplest way by assuming the capture of carriers by' -typ adhesion
levels. Since the lifetime of,the c.onduction.electrons,with respect to,.-..
their adhesion levels is much shorter than with respect to their:.,
recombination, t he adhesion levels are first filled up within,-a very,
'Card 2/4

81369
'The Influence of Adhesion Levels on thIe. S/181/60/062/03/28/028
Relaxation of,Photoconductivity in CdS BOOVB017
Single Crystals
short time, and only. then the slow establishment of recombination equi-m
librium starts. This is theoretically.investigated in the.following..
dence of*the.concentration of:free'electrons on,
Fig. 5 shows the depen
t/GM, in for different adhesion1ev .el densities-The higher the level
density, the flatter.the rise of n. In the following, theinfluence
exercised by constantexposure on the.first stages,of the increase of~-,
photoconductivity is,investigated. The, existence-of rapid capturing
processes influences-the change of. photoconductivity.in time andp
-especially, the phenomenological yield;and,the effePtivelifetime.of-,
non-ecluilibrium.carrilers.~,Also the character of the dependence.of these
quantities Ion constant.irradiation and its intensi ty-is-considerably
influenced by these processes. Hence, the characteristic features,of
photoconductivity of CdS.are rather to,be.,connected with the complex
~character of recombination processes,lthan with the excitation process.
In an appendix, the influence.exercised by constant,exposure on'the
relaxation of monopolar photoconductivity..in,the,presence of a),(x-type
~,and b).P-type adhesion~levels is investigated.'A. B. Berezin, 0. A.
Card V4

S/I~i/~OW*04/02/034:
B002/~063
2,~-77oo
AUTHORS: Konopleva, R. F.,, Ryvkin, S. M., Yaroshetskiy. I. D.
- - --- - ------- - -- - ----- - -
TITLE: The Problem of the-Thq0ing Cross Section- of Holes in,
Germanium.by.Defects Formed by Gammajrradiation
F*zika tverdogo tela 1960, Vol; 2 No- 4, PP- 566-568
PERIODICAL:
TEXT:, The trapping,cross section of holes byAefects formed,by neutron.
bombardment was found A6,be, 10-15 CM2 (Refs. 1-3). The trapping cross
section for gamma irradiiLtion, was 4.10-16om2. The*present paper shows
that:this difference'is due to a false assumption: A defeat formed by.
~gamma irradiation has not.two but four acceptorlevels in the forbidden
.band. The dependence of the lifetime.on the irradiation with gamma
quanta was determinedon 11 specimens, wherefrom jhe trapping cross,
section of.the holes was.calculated (Table). A CoOO preparation with an
activity of 400 gram-equivalent Ra was used as gamma source., The'authors.,:,
used the-photomagnetic:method,. the method of,'photodiffusion, and the
examination of the relaxation curves,of photoconductivity to measure-the
'lifetime. The mean value of the trapping cross section-was,found to be..,
~3-8-10-15=2. This is close to the.va lue ob tained for*-the neutrons.
,card 1/2

fiwLw

81634
investigation of the Kinetics of Infrared S/1 81/60/002/06/22/650
Impurity Photocon,duction in US Induced by, B006/BO56~
Previous Illumination
photoconduction in US are discussed in part 1. All investigations were..
carried out at 770K on.CdS single crystals onto which.indium contacts
were sputtered in vacuo. Above all, the.,spectral.distribution of photo-
conductivity and the,time-dependence.of.the.,photolourrent were~investi-
gated.jig. 1 shows the,spectral photocurrent distribution, recorded.
u
der various conditions; without illumination
n previous (Curve I) with~
previous irradiation by.green*light, by:leaving,the sample in thedark
for"a longer period of time~,(Curve 2 -photoconductivity is found
b ginning at 3-5,a), aria under simultaneou's constant.irradiation with
white light (curve 3 - whi,ch produces exactly the same,effect)o.ln,the
latter case, distinct photocurrent extinction.with a.maximum at 0.9/.&,
could be observed. Furtheri the time dependence:of infrared photo-
conductivity after previous illumination withgreen.light_of various
~intensities was investigated. Betweeno.the previous illumination and the_
beginning of infrared irradiation the sample was left in the dark for.
40 -60 minutes. The results,areshown in:Fig.' 2. The.photocurrent re-:
laxation at the beginning of infrared irradiation was found.to depend
.upon previous illumination, (Curve.a high intensity, curve.b.- low
p
.,Card 2/3

81634
Investigation of the Kinetics of Infrared Im 'u- S/181/60/002/06/22/05b*:'
p
Photolconduction in,CdS,Induqed:by B006/BO56
Previous Illumination
intensity). In part 2 of this paper,.these experimentallresults:are,
analyzed on the basis of~a model with one, adhesion* level, and the~infra-
red photoconductivity kinetics is calculated for the eds Ie of a Iso-called
"quasi-steady" excited state of the crystal..Fig...3 shows the scheme of
electronic transitions upon.which~the analysis~.is,based.!In,part 3, the
,results obtained by experimental inves.tigation.of the.kinetics of~infra-,
.,red photoconductivity in a qutzai-steady excited stateare given and the
parameters of,the,adhesion level are determined. The dependence.of them
growth and drop times as well as of the steady photocurrent aireshown in.
Figs * 4 and 5. Several particular features of infrared:photocurrent
relaxation in the unsteady state, are discussed.in.part 3.''Further, Iinvesti-,
gations.in this.field are to.follow. The crystals investigated were
produced by 0. A. &Tatveyev and L. V. Maslova. There are 6 figures and
11 references: 4 Soviet, 4 American, and 3 German.
ASSOCIATION: Fiziko-t,ekhnicheskiy, institut AN SSSR, Leningrad (Physico-
technical Institute- of the AS USSR, Lenin d)
gra
SUBMITTED: October 26,
Card 3/3

825h6
The Influence of Adhesion Levels-in Semi- S/181J60/002/007/026/042
conductors on the Steady'Phot6conductivity and B006/BO60
the Lifetime of the Minority:Carriers
of a high injection level. This is done,on.the,model of,,a semiconductor.
~in whose forbidden band there-exist two types of local levels with, sharply',.,.,
dif-fering properties (Fig. 1): the S levels are assumed to be ,traps for the.:,
minority electrons from the conduction band. and the holeP,:from. the:,val6ncy
band., i.e., they are recombination centers for .the light-produced minority...,
charges. The AT levels are, due.-to,electron IPxcha nge~ connected with the
conduction band (the electron exchange with the :valency band is foAidden)9
and therefore they are adhas ion :levels, for the, electrons.,:, It. is shown that,
the.electron and hole concentrations in the,.S,centers,are closely related
to the electron and hole soncentrations'in.the bands the else-
B., g.9 if
tron concentration in the conduction band-is changed, anyhow, theellectron
lifetime -T n - I/ yp. in this b Iand:,is decreased, and,the.hole li,f etime
-r !/T n in the valenoy bandLgrows.-This is the sense in which the:
p P
introduction, of adhesion levels-acts. (I n and are the trapping. factorsEl
P
and p the electron and hole ooncen'trations in the S cent ers; n + p
S, the,concentration of the recombination centers). In the~following
Card 2/4

82546
The Influence of Adhesion Levels in
Semiconductors on the Steady Photoconductivity Boo6/Bo6o
and.the Lifetime of the Minority Ca:rr_,ers
sections of the paper the authors first examine in a. general way the
influence exerted,by adhesion levels in the case of a high injection
level at a low concentration of the recombination centers, and then the
same is done for a semiconductor with-two types of injectionlevels..
In this samiconductor theforbidden band containsg besides the recombine-,.
tion centers S and the adhesion l6vels, M, for, the" eleotronsg.adhesion
levels L for the holes from thevalenoy.band~(Fig..7)* Section.4 again
treats. for a semiconductor with one adhesion level,in,Jhe-forbidden.
band, 'the case ofa high injection level, but aVa, high concentration,6f
the recombination centers S. Finallyq section. 5 deals with., the case of, a
low injection level at anarbitrary concentration of the recombination
centers.. Here, the Fermi quasi-levele of electrons and.holes practically
coincide, and the tra may be classified into adhesion levels and r com-,
'p8
bination centers-only on the basis of the various trapping crose.sections.
(5-9),and (5.10) are first generally derived for -r and .,r ;* f or M 0
n P)
theygo over to (5-1-00 The latter formulas are then further treated f or,
the special oases of an n-type,and a p-type semiconductor.
Ca,rd 3/4

The Real Lifetime and the Possible MechanJISM S/181/66/002/010/010/051-
of the Inelastic Scattering,of..Carriers in B010070
~Semiconductors
concentration of holes of k-th kindq and is the trapping coefficient.
Snk
7 and -C can differ by some orders of magnitude. Adetailed study.is.
An real
made,for comparing these quantities in three special cases. First of all,
it is shown thatfor the impurity~photoconductivity 'CAn 14 Tre :al but the
difference is not large. The intrinsiciphotoconductivitLAY recombination,
with traps is,then investigated. It is found-Ahat for high injection level
when n n0 and p0 (n0- equilibrium concentration of.elbct,rons;,P
0
equilibrium concentration of h-oles) and U con6iderably.exceeds the number
of electrons thermally scatteved-into the conduction band, t'
real A
lo
This does not hold fox ":intermediate", or low injection,levels.-For.. w
:injection. levels Tr The temperature.dependence.of these'
real equilibr.-
quantities'is studied. Intrinsic photoconduction by:,.recombination with"
traps in the presence of adhesion levels is'discussed. A formula fo .rVr a I
e
Is derived. From the cases considered here it is seen that T may be,
An
Card,2/3

FD
USSR/Pbysics Superconductors -3127
C~ _' ;.79
rd 3j Ptib.f153
2/19
Author Mashavets, T. V.; Ryv:kin., S. M.
T-itle Influence of heat treatment upon lifetime of non-ground current carriers
77
in germanium (the kinetics of the formation of defects during heat,treat-
ment),
Periorlical, Zhur. tekh. fiz.,.25, No.9 (September), 1955, 15304543
Abstract The authors investigated the influence of heat treatment at relative
"low" temperatures (4oo-55poc) upon~the lifetime of non-ground current..
carriers in germanium.. The lifetime decreases with,increase of tempera-
ture and duration of the heat treatment, which is explained by the'oc-.
currence of defects:that play therole of centers of rec6mbination.~On
e bas' e ur-
t
h is ofa study.of.the kinetics.gov.erning..th process of, the, o,cc
rence the authors,obtain data,on,their energy structure,., They show.tha
t
the process,governing the occtrrenceof defects in the investigated, re-,
gion of temperatures differs from the process governing the occurrence
of "thermal. defects" ordinarily appearing in.germand:um at higher tempera-,
tures. The authors' aim has been to investigate the occurrence during
heat treatment.of..so called thermal traps (recombination centers) and,
also the nature 'i.e. energy structure) of defects associated with these

SUBJECT USSR PHYSICS CARD 1 2 PA 1681
AUTHOR RYV,-K-l-ff S.M.,
TITLE inks "Secondary" and "Passing-Through" Photocurrent
A.Semiconductors.
PERIODICAL Zurn.techn.fis,.L6, fase. 11p 2439-2447 (1956)
Issued:., 12 / 1956
By the.present work the attempt is made t1o show that putting the secondary
photocurrent equal to that which:passes,through is wrong., The terminology
using the terms "primary" and "secondary ~photocurrent is described as
irrational if used for describing pliotoe"lect*ric phenomena in.semiconductors._.
On the kinetics of the Phot6aurrent: If the semiconductor samp'le is irradiated
by'a constant.light current from a certain moment onwards, the relaxation-like.-
~process of transition to a new,:stationary co Incentration of.charge.carrierst,.
which , occurs as a result of,: ionization,~ is determined in'the :general case by
-~two phenomena:.1.) By a change of I concentIration by elIectron.transitionWinlhe,
"energy spacelt, i.e. on-the.occasion'of ionization and recombination.,
2.) By modification as a result of the motion of the carriersin the coordinate
space, i.e. by diffusion and drive in the electric, field. Both processes take
place simultaneously and with reciprocal interaction. However, when evaluating.~~
the influence exercised upon the effective.relaxation~.time of each process, 1he
e:Lgentimes of both processes may be-investigated separately.
On the so-called "Primary" 2hotocurrent; The. trans it-ion '. carrIeIat..(morelexa,ctly
its initialstage) according:tolhe terminology used by GUDDEN and POHL,

Lrn.techn.firi,26 1956) CARD. 2 2 Pi 1681
fase.11, 2439-2447
corresponds to,the so-called "primary"icurrent. On the occasion of the
occurrence of diffusion-drive-equilibrium, FERMI'S quasi-level in the semi-.
,conductor., is reduced, and the relative influence exercise&.by the, carriers
movingfrom the cathode into the crystal increases. Hereby the basic condition
for .the "primary" character.of the current is gradually abolished. ~ If equi-
libiium in the energy space is rapidlyestablish -ed, the relax.ation.process
occurring on the occasion of illumination is reduced to the fact that the
transition current goes over.into the passing-through current, Thus the,
establishment of equilibrium in the coordinate space is fully characterized.
'On the so-called "secondary" photocurrent: If no particular assumption.a.are.
introduced (if, e.g., the barrier layers at the contacts, very strong fields,_,
etc. are not taken into account), the photocurrent occurring immediately,after.,
illumination can only diminish by~.the establishment:of.diffusion equilibrium,'',
with the electrons. The photocurrent observ Ied by GUDDEN and POHL on ZnS
cannot be put equal to the passing-through current. In conclusion several
.~technological problems are.discussed.:According to the~uthorls opinion the
-old,terminology must be dropped._It is necessary either to introduce new
terms which characterize occurring phenomena correctly orto change old terms
accordingly.
INSTITUTION:

SUBJECT ~USSR:/ PHYSICS CA-RD I PAI- 1821
AUTHOR
TITLE The Forming Me6hanism'of ImpulsesJn Crystalline Semiconductor
Counters. (The'llotion..of Charge's on the Occasion ofan Impulse-:
Ionization in Semiconductors).
PERIODICAL iyurn.techn.fis, 26, fase.12, 2667-2683 (1956)
Issued:. 1 1957
The present work intends to determine the,,basic qualitative properties of the.
forming mechanism of,impulses in crystallinesemiconductor counters, as,well,as
to carry out an approximated quant.itativ Ieinvestigation of this problem..At first,
several questions relating to schemes-were dealtwith in a precise'form_From the
point of view of the processes which'take place in the'sample, thereal.scheme-,
can be replaced by another.in the-case of which the voltage on:,the sampleis
kept.constant. At the saMetime.,computation of the charge in the impulse..in-1he.
real',scheme can be replaced by,computation of the excess electricity which~is a
result of ionization in the outer.chain of the,,second scheme. In~this_connection
investigation of the problem is confined to computing the additional-current i
in the exterior chain of.the scheme on the basis of.the~investigation of the pro-
cesses that take place on the occasion of ionization inside the s,ample..The semi-
conductor mechanism of impulse formation is then examined. The process is.analyzed
which'takes place in.a crystal with finite conductivity before excitation immedi.
ately after ionization..A. very.simplellflat" case.is investigated on the assumption
that the.domain in which ionization took place has the shape ofa parallelepiped.

iurn.techn.fis,26,fasc.12,,2667-2663 (1956), CARD 2 3 PA 1821~
it is assumed that the current carriers produced on.the~occasion of.ionization
Nill within short have an energy.,distribution corresponding.:to lattice temper-
ature as-a result of the,collision, and.will hardly be dis.tinguishable,from..
the thermally ionized current'carriers. Ionization and the establishment, of,
quasi-equivalent distribution areassumed to exist at the moment.,
~In the following an exact analysis of the question as,to:the mlechanism.of impulse
formation is given mainly in order-to determine the criteria for the transition
of a formation according to thescheme of prima Iry current into such.according
to the scheme of.a passing-through~current, as wellas to compute the-depend-
ence of,the amount of the impulse on the conductivity of the sample and,,other
~of its parameters. Computation of A i passing through and 9 (diffusion-devia-.1.
tion-equilibrium) is for a general casevery difficult..Therefore only,some,-..~,
special:.cases - of the weak, medium, and strong field - areinvestigateds and.
for,these cases criteria are set up. Besides, the case for -C Aff 93SR
(Leningrad Physicai--Te,,~hnioal Inatitute AS USSR)
SUBMITTED: Augu -21 '957
CadzitLm-celenium
s L~mz- -Fl-opevt
Card 2
2

-28-4-1#39
7
5
AUTHORS., Ivanov, Yu. L. Ryvkin, S. M.
TITLE: The Formation of Current Oscillations~in Germanium Samples
in an Electric and Longitudinal Magnetic :Field,(Vozniknoveniye
kolebaniy toka.v obraztsakh germaniya, pomes6chennykh v
elektricheskoye i prodolln,oye magnitnoye pole)
PERIODICALg Zhurnal Tekhnichesk9y Fiziki, 1958,'Vol. 2.8, Nr 4: PP0774-775,
(USSR)
ABSTRACT: The authors determined current fluctuations in some germanium-
-samples through *hich a direct current passed.and which were..
placed in a:constant magnetic longitudinal fielA.,(magnetic
field parallel to the current). Under certain.conditions the
forming fluctuations had a shape near to the sinosoidal
line with a frequency of. 10 nd Th
15 kilocycles per seco e
fluctuation character depends on quite a number , of circum-

urre
stances. Thus fluctuations only formed.at a- c nt through
the sample different flDm zero and increased according to
amplitude and frequency with.an increase,in current.'Ana-
Card!j* logo
us dependences~were~also observed on the.magnitude.of.the'
l

57 28-4-14/39
The, Formation of Current Oscillations in Germanium Samples in an, Electric
and. Longitudinal Magnetic Field
magrietic,fieldo In spite,of zinc-6ontacts,the..voltampere~
characteristics in the investigated samples d if f ered f rom
a linear one. The fluctuations formed -in one as:well as the:~:
other current direction were more marked when the. direction
of current correspond to the lower resistance.of,thel samP16.F
Fluctuations only occurred in the case of. an exact agree-
ment of the direction of the magnetic field. with,the axis~ of
the sample. An intensitve illumination of the samples led
to an interruption of the :fluctuations. A certain drop in'..
temperature in the samples7_ however, led to. a n in,crease of,
their amplitude and frequency..An etching of the samples
in hydrogen peroxide promoted the formation and- the stability
of the fluctuations. An increase or decrease of the ampli-i
tude of fluctuation connected with any.change,,of.the experi-:
mental conditions in all,cases led to the correspondA
ing 3-
crease, or decrease respectively of the &-quency of,: f luctua-.
tionw. There are 3:figures and 1 reference, 1 of,'which is'
Soviet.
Card 2

On the Influence.of Surface, Treatment of Semicon- 57-28-5-2/36
ductors on the Magnitude and the Spectral Distribution
o fPhotoconductivity.,
vacuum and in air, as.-Pell as by means of a short ~exposure j
to a gas discharge, The results of the investigations
.apparently permit to draw'Lthe follovino conclusions, The
strong photosensitivity.at the surface as well as a strong
dependence,of the sensitivity on the treatment of the, sixr..
face are determined by the strong influence of the recom".'.
bination processes near the'surface~ Theserec-ombination,".
processes can influence the phatodo.nductivity,and modify.
the phenom-enological~emission.'(fenomen6logidheskiy vy
khod). As an increase of,,photoconductivity is accompanied
by an increase of,dark c6nductivity,it can be assumed
that the investigated kinds of treatment:primarily influ-
ence themagnitude dnd the sign of the zonal curvatures..
nearthe surface. The experiments conducted,, however, can-
not" furnish,a basis for the evaluation of . partirula-r fea-.-
tures of the mechanism. The role of the recombination pro-,
cesses at the surface is Trell investigated in germanium?,,
silicon and similar~substances, where the deterininati-on of
Card 2/4 carriers hot in equilibrium is only possible af ter a, s-,,ectial

On the Influence of Surface Treatment of Semiconductors 57-28-5-2/36
on the, Magnitude and the Spectral.Distribution of Photo-,
conductivity.
treatment of the surface.,It appears, thatthe recombina-,
tion processesalso play an important AB'le in other-semi--
conductors. The experiments also proved the, neces s ity_:"of
neyr effective methods for the,cleaning of,Ah6 surfaces
of the semiconductors-This would presumably make it':
possible to increase'.the photos ens itiv ity 'ofnume r9us
substances, whichin spite-of their stronrCabsorpti Ion -, are
considered,not photosensitive or only Tfedkly sensitive.
Therefore the experimental results,verify.:tlie~fact,~tkiat
the,two.basi,c anomalies in.photuoconductivity -:the ",in-,.
active" absorption of light in,some.substances as well
s the reduction of photoconduct' pth of,.
a ivity in the de
the absorption band - can to a considerable degree -.be
explairied.by one cause, that is to say,by intensive rel-
combination-type processes, which are.considerably in-
tensified near.the surface. The authors express theirs
Cara 3/4 gratitude to the student of Leningrad State Universi ty

AUTHORS: Strokan, N. B. 57-28-6-5/34
Tuchkevich, V.' M Chelnokovy Ye.
TITLE: Silicon Photodiorl6s, f.Kre,mniye-vyye fotodiody)
PERIODICAL: Zhurnal Tekhnicheskoy Fiziki, 1958, Vol. 26, Nr 61~
pp. 1165-11068 (USSR)
ABSTRACT: Inthe.present report the results obtainedby investigating
the possibility of.utilizing silicon p-n.photoelements,~
for the purpose,of transforming light signals into electric
signals: in~ th.q. photodiode regime are described.,It could~be
con
taken for granted from:the very,beginning that sili
photodiodess which aze of somewha,t.lower,inte'gral
sensitivity must offer some advantages.compared to-,:~
gp.rmanium photodiodes (reference 3)i viz - a ~,,lower "dark
current', and a lower degree of inertia. Further,, the,
results obtained by in~re6tigating:the basic prcperties
of the ailicon'photodiodes LFTI produced in the.laboratory
ity of samples.to the light
are described. The sensitivi
of the, incanaesoent -amp with a colortemperature of,,the
Card 1/3 filament of -..,285000 fli)ctuated between 5 and-7 mm/lumen

'AUTHORS: R,~_~k Strokan, N.~ B'.. r 57-28-6-6/34
TITLE: On-the Kinetics of Phototriodes (0 kinetike fototriodov)
PERIODICAL: Zhurnal Tekhnicheskoy Fiziki, 1958,,Vol. 28, Nr 6,
pp- 1169-1173-(USSR)
ABSTRACT: Phototriodes can be used as highly photo-sensitive
means transforming light signals into electric signals.,
It is therefore of particular interest to studytheir
inertia. During the first months of,1957 the-authors:-,
the
e
produced samples of g rmanium. phot6triodes,in,
laboratoryg which had a sensitivity of 1 F 4 amp6res/:
lumen, a dark our nt.of-500 700 icroamp6res
m
Me
(saturation remains up to -_,P57), and a sensitive surface:
of mm2, (reference 1). Besides the authors, also
engineer N. F. Ragozina and laboratory worker,!-. A. Lebedeva
assisted.,in
producing the samples. The high sensitivity
.
...of phototriodes is known to be connected with the process
of amplificationof the photocurrent which'takes place in
them. The kinetics of phototriodes was investigated.by
Card 1/3 means of an apparatus w1hich-is shown.in form,of a,

On the Kinetics of Phototriodes -28-6-6/34,
57,
schematic.al drawing (figure:2). Determination of them
quality of the,time constant was,carried out by the
method deyeloped.by TolstoyLand.Feofilov. (reference 2)~:_
on the basis,of the principles of1he.substitution scheme.,
(reference 3). Results are,shown by a table. FroWthe
oscillogram worked o-ut by V. V. Makarov, student of the
LGU (reference 3) it may.clearly be.seen that~the rapid'~-.-
relaxation of.the collector current, to be expected'on the
strength of theoret
-1cal argumentation and a.slower
relaxation of the potential differences.on the poin Itof
emitter transition,actual"y:take place. Int conclusion_ iV.':.~
is mentioned,that in the case of.phototriodesla working--
regime which is analogous toLthe so-called "hybrid regime,.'
of photoUodes (reference 5),is possible. In'this, case
xelaxation has 2 domains: a "phototriodell domain atlow,
values of.the rhotocurrent. and a ,'valve' domain",,which'
corresponds1to high values of the photocurrent. Obviously.'
the'llvalve domainl!,is possible in phototriodes only,inthe'
case of "asymmetry" durin ,ggeneration of the.photoele,etro-
motive force in 6mitter-and collector transition
*pical'-
'Card 2/3

SOV/57 -28 -9 -2
33

A Stro'lkrzm, N. B. Makovskiy, L. L.
~jf zhe Kinetics of Photovoltaic Cells Wi i t b-
j.umctions (K voprosu o kinetikeve-ntillnyki~

m
s elektrozino-dyrochnym Derekhodo
Vol. 28
I --,qk~,n4ch--koy fi--iki
Nr 9, pp- 1671-1882 (USE-a)
1958
,
t

A F,T

er-
;1" is is :~i ~,C lie kinaties of the photovoltaic cell 0
a io
-r. No limitations nr.e imposedon.the r ti
E; H (wher a C denotes t.he cap city of th
a e

at zer--~ vcltage, and R its resistance) and of
0
-am o~a, a -d
-Y Is, R. The downx :r -loping branch of the relaxation'
'ig
c -.,z r.-ei wr as t, t ed In the first section qual4tsbive conq,d-
7
r-- t -i on z; bearing cn the kinetics of av special cases are:
Tx .2e t C .1 r- C h 2 i sis investigated a:~ t. c,S qaant-i-
-u
--c e C n 'he experimenta I ~,d is dc-

the theoretical r tilt, Comnsr'd
c b ut -n n e c t iA e-
w fni~_, br nich. et f
E-x r im evil. zThe downvard-sl-~p a C
t,v e, --z~ e a4wuming f f er a. n s

3 od
In reference ri
Z M3 U

i 8 1D f P h t v v o a c C e 11 s 'N i t h Elect-ci-iicic Jucct~,----7.
f
f 4
zi small capacJ,:.t.;ve currents) are no~ .5at- a d t f , E! I U M I,
i. ff J o J. e ,-. t 1 y h 8 h Li s ac t on ~:vf tjjZ.
h uz
CT-t-,Va 1.1, cz t I I I determined onij by relaxation. This
-U, he ~-Iata for the determination of the li'e
i z)::* Ila m ca. rr sions were sub-
i rs. These conclu
s L n~ JLa t by exper.-menta. From the slope of the rectilinea.--~.-
it was found, that the levels of
ov&d by 0,23 eV from the bound-
art~ elft
zone. There are 10 figures and 8 refer-
~~eii,~h are Soviet .
'-34kc -ekhni SSSR (Leningrad.'
C". t ch skiy institut?AN
3 C". 1 lrstitutcAS KS--)
6 P, ~.i I 'TT 1D

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AkRdo=Ly% sank SM. Otdolval4w rittka-tacottichaskikh co,jk
TIZUA t~riogo tols; obamik statmy, (S.1id St.-, Collectim
of krtl-l-a. 11 ) Wacv" Tzd-_ M =8, 1959. _'23 P. 3.5-
"Piss priatd.
M. A.Y.Jor A~- mu-.11 Yd. .1 J-.bll"za ILc. T. 3. nllp~cb;
B.A.,
T*ch. Lt. I
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FIT SM. IIIIA -11action of artiel" to lat-ard for P!4r3tcisto 12-ti t
%be structums .44 proj~crzies of solids.
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pmbl~w Of -114 A%.to 2byti-, ~z pm.;-d by tho W;~rt=mt of ?~,* -
"i W-Jccatic4, A-3-1 or Scirmona, USL~R. 7T~ &utr.:~rs mport on tho p i
-zh
pro;mtrti.. or
uld.. 9-111.1- -4 -rtv43 ~t^l 4LLoy*. nMm vlsct-.11~3 a~z-
7 ductivity of thevi ul.t~ms is stud-4. T.,* tffvct4 of in~dimtica &-.a &~o
tic r1harons - .-Ixo la-stf,--sL
da-tc4 to 12~4 t'-ry or alectriaml b;-)d4-. X-roy jt`~I'-. -'-M t~d~
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P.
out. porsausll- lox tre swationed. 1bfemn."s "z;x:;~~Y *%ch &mlcle.
TABLIC OF (=r---=;
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of Inpir:
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PH ASK Z104K i~XPWLTATU)N 30V/j 140 4
Akademlya nNuic Ukrainakoy 3:11t. InalAtut rizLkl
PotoolfiktrIaheaktyu I ysvteniva v poluprovadnikakhl
pervago v4esoyu--noAo 4nv,3ahW0n'Ys PO fOtD-1~.ktrIqho3k1;x
F,-
I Optlaheakin: yaVlantynm v Pnl[jPrAvM'1"tk'qkh' g. Kiyev, 20-26
noyabrya 1957 g (Pnotoolnocrto and Optical rnnnom,tnft in Semi- f
conductoraj Trannnotlona or the Virat Conrorene" on Ptintoollectria
and Optical Phonomona in Ne-miaonaun tars ... Klyav, 1959. 403 p.
4,000 copies prlnt~d.
Additional Sponsoring Agencys Akndumlya nauk 3:13R. Prezi4lum.
Kominalya po poluprovodnik5m.
Rd. or Publishing Houses 1. V. Xtatoh; Tenn. 94.: A. A, Matvayahuk,
Houp. PA. t V. Ya. Lhmhkarnv, Aaftamictan, Ukrainian SSR, Academy
of sciences.
rURPOSEt. This book In Intended Car Scientists in tho Ciald or numi-
conductor Alan. Solid state opectrosenpy, and semiconductor
'
-
w-UT -0a t~A_A_Ed WtVi-ned WC
Udn to j
,~
devices. Th collection fui
univerattlas and InstItittan or, htf%nr - tonnn teal training

V041411zLng in'the phyalaz and tecrLnIcal application or sami-
*
conductors.
COViMAGSs The collection containa reports and Information bulletins
(the latter are indicated by natnria" road At the First All-
union conrerenca on Optleal-und Pherjolactria Phenomena in Soml-
conductors. A wide scope of probl=3 In semiconductor physics
and technology are conaLderods ptlococonductivicy, phatoolectra-
7 active forces, optical proportieb. photoelectric calls and
photorealstars, the actions of hard and corpuncular radiations,

the proportion t thin films and complex 3cmiconductor systems,
a
by E. 1,
eta. The materials were prepared Car publication
Ranhbor, 0. V. 3nitko, X. B.,Tolpygno A. P. LubeftenUovand M. K,
Sheynkman. References and dinauszlon follow each article.

Orono, Yo. P., and _M
A U:mllncarenon or C'J3

Phatoolecte, Iis and optical Phenomena (Cont.) SOV/3140
Crystals at the PASO Of the KkinA~sor
tlo
a
[S
n
p
ctrum)
p
Th ads)
'
63-
Oros* YO P A A Ka I
A21X&nekly, and
'- Structure
of S
;l go~tcc;
t
~
r
p 4
n
"'V'ty CUrVeS Of CrYAtA15 At Low
?"peratures (Theses) 66
-IOmO OPtlaaa and Photoelectric Properties
-
or rolycrydt&llln* CJ36 Layers-
,.
74

OU'
and Pe ritlea of
CdSj, C
fhotocanducting Ingle C;7atAls (x4l)
Khansevarov.~ R YU a- and Z.
ar-tho WI4tA a th;' __H_.ASOyOV. Dependency
W
UIT
F
4 a On uO`pOA77t`1'WQf CcIS-CdSo
301i4 Solutions-
95
:nd The Generation or an
,p
Ph
.
-Oscillating t lactric Current in CdS_ and C430 Single-
1, Crystal Photorsointors
card 5/16 96
Machanlam,
U a
i
'
n
D
g& In staz rauffrWrF-Dirring the,
formation of
&~Ivxrough Conductl a Channel'
f

67392.
Sov/18.1-1,-,9-10/
~3 1,
AUTHORS. -Arkad ~yqva,_14E~.
TITLEs Investigation of.the A4~esion_Levels,in Poly ryetalline
Sb S j'and in Single WCrystals by, the,Meth6d o:'the Trod-rmo_~.
stimulated Current
PERIODICAL; Fizika tverdogo tela, 1959, Vol I :Nr'g pp 1'57 13 0'
9 8 ~(USSR):,
ABSTRACT; In continuation of a previous paper (Ref 1):the present
article offers.some experimental,result5. Figure 1 snows the,
temperature dependence of the th-ermostimulated cur_ren-,'._ Irl
Sb S , figure 2 shows the same in selenium. Both ~samDles ha ve,
2 3
p-type conductivity. The heati a Q1.0-.5 deg/s
ng r te,,wa, ec for, the

former and 0.2 deg/see for7the latter. The rin'os't;
the
current in the former exhibits two maxima at.T ~-AWK and
2 180 0K, and three in a Ieleni um (115 0K 16 5 'K, band 18'0' K).
An evaluation of the adhesion level position,yields:.for
Sb S ME 0-33, and_6E -- 0 '39 .ev, whenasr-,aming-the effect-
2

Card.1~2 ive mass,,of the holes to.be equal to the mass 'of..free

1_2 0 01 673913
..31
AUTHORS: Vitovskiyp N. A! I Mash.ovRIEL'I __TA .5.
TITLE: Determination of,the Number of Acceptor Levels of Defec'.8
Occurring in.GermaniumvUnder the Action of Gamma Irradiat4

PERIODICAL:
Fizika tverdogo, tela,' 1959,.Vol, 1, Nr 9, pp 1W 3 6
(USSR)
ABSTRACT: The radiation-induced formation of-structural defects stable
at room temperature:had already. bee h investigated several
times, but not.~all :the problems related:therewith are as*.yet
solved satisfactorily,. The'present paper,offers* a contribut-
ion by discussing bhe possibillities. of a' complete analysis-, of .
the energy je-Yels of,the'-defects and by, publishing experimental
~Hall
r.esults,concerning th.e-,temperature dependence of e.
coeff idient R. of, ~,n-t~tk germanium.. irradiated by. Co.: _..arrays.;
An analysis'of::thes~e-,rbs lts 't eci
U, -permi s a pr se determination
of the number,of,acceptor.levels.belonging.to one --radiative
defeat. To investigate-the temperature dependence 6f~the
carrier concentration 3n,the,presence of,, mul tipl e -charged
centers, :the authors,theoretically investigated a~level scheme
of a defect (Fig 1), with n in the'condue'ti n band considered
0
'
Card 1/3 2a). In this connection the
to,be~composed of four,parts (Fig

67399~
SOV/181-1-9-2
3/3 1
AUTHORS: Arkadlyeva,.Ye. N.9.Ryvkin, S. 11.
TITLE.- Investigation of Adhesion Levels in Sb Be by the Method of
--3
the Thermostimulated,Current-
PERIODICAL; Fizika tverdogo tela, 1959 Vol 1, Nr 9 PP 1460 1463,(UsSR)
,ABSTRACT., If adhesion:levels. are occupied,.by carriers,st low t emp er
atures, this condition is:conserved for a long.time..Vlith
slow heating1he carrier'concentration ris.es in:the allowed,
.,zone"dn the same wa jr,. as- the current .(if a' fieldis applied
This boost current-which is.higher than dark current.is
defined as thermostimulated -kn investigation of.thermo-
stimulated.currents allows ihe estimation of-position and,
oconcentration of~ihe adhesion levels. This method is specially
applicable to.poorly conductive and photosensitive semicon-
ductors..'It had already been utilized'for,:the investigation of.

CdS, CdSe, HgJ 2i an efs 1'11).~The present,paper.offers
4.ZnS (R.
the results obtained for the single Bb Be ~crystals.:Investi g-

'card 1/#' ations were conducted in the temperature range of f rom. 180 to

67399

Investigation -Se by. the Me
of Adhesion Levels in Sb thod SOV/181-: -~-W3'
2 3
of the Thermostimulated Current
0 and 2- as t ''the temper-
~420 C. Figures I and 21,~show samples 1
~ature,dependence of the thermostimulated.~cu~rrent,.~,.(a6lid,curve)
d*
at curve).-The curves, 'were recor ed
and the dark.c re ddshed
pr
by means of a recording-device of theIype EPPV-51, which ex-
-12 -7
hibits.a sensitivity"varied within~wide.limits (,~-11 0 -;~~-10
a/mm).' The.the'rmostimulated.ourrent,shows-,char4ateristic;
one.withmaximum. at,115, 150, and 190"K. An est.imation:
fluctuati
,
of the energetic position (6E~) 'and the.~concentration
(k) of
the adhesion levels is made ontheassumption of,the very slow
hea~ting'having.a',quasiequilibrium%chairacter, so that the Fermi
ilevels~for dhesion levels and zone re the same.~:It can
quasli a a
be assumed furthermore that thie.quasilevel coincides.with the
adhesion level in the case.of temperature T corresponding to
P
the th6rmostimulated current maximum.;!!~E kT 1n
M
P e._U ...... _
P
kT ln liblds, where P isIthe effective,leveldensity
M

Card 2/.' in the valence.bandj,,P'is.the hole concentration in the valence

x*1 7700 66287
AH
'AUTHORS. Ryvkin, S. IA.:, Konovalenko, B. M SOV/181 1-11-2 /27.:1
TITLE-, On the Dependence~of Induced Conductivity of Cadmium
Sulfide on the Ehergy of the Erciting El6ctrons
PER110DICAL: Pizika tyerdogo telat 11959, v,ol .1 Nr 'IV PP.1757-1761JUSSR)
ABSTRACT: According,to reference 11 it was jointly established with
Yu. S. Smetaanikova.that for 2 to 30 kev,electrone with
increasing electron energiesq- but with a total electron
current, intensity, whicli: remains at the.same levelt the
reaches a
induced conductivity,of the CdS saturation,value,
i.e. that this does notincrease any more starting from
a certain, electron energy. TheAnitial point of the
"saturation" is not identical for.different samples,
Additional investigations (Ref's) established. that with
small electron energies the decrease o If.the induced
'conductivity is related-to thefact.that.theelectrons do
not deeply penetrate into the.crystals'ana therefore the
recombination processes occurring:on,the surface of the crystals
have aa increasingly importantinfluence. Other authors (Ref 3)
carried out similar investigations,on "voluminous"- mono-
Card-1/2 crystals with 30 to,60 kev-electrons.1heir measuring.results,''.:

66706,
sov/lo0_4..8-27/a5
0 p t i muni Operating Conditions for the Photo-d1odes sed With Small
Signals
of +20 0C and -78 0 C, while Curves are
IC l f2
the "illuminatio^nt" characteristics at the same temperatures.
The curves are calculated for a.photo.-diode which hgS a
".dark" current of 8 jiA -and the resistance R1 .> 10
at room temperature. The quantity R is represented,by
O~
ctZ a , where a . is the slope of~the '!dark" current-
voltage characteristics at 9 =:O This angle a at'
2
0
the room temperature is equal to 90 while at low
temperatures. a. a and tends to zero. If the device
works as a photo-diode with a load characteristic
the load line intersects,the characteristics
R ctg
I and I in the saturation region;, consequently,at:
T f
both the low and the room temperatures, the,output signals
taken from the device,is the same. On the other hand, if
the diode is operated.as a photo-electric source, the.
intersection of the load line i),rith the., characteristic
Card2/4 occurs in the saturation region only at the low temperature.

66706
Optimum Operating Conditions for the Photo-diodes Used with Sinall
Signals
In this cas.e,.again, the output. signal is equal to that.
obtainable in the photo-diode operation., From the above,
it follows that the photo-mdlode can be operated as-a
photo-electric source, provided it is maintained at a low
temperature. Under these conditions, 'it should be expected:,
that the noise level% would be. ver-y low. The above con-
clusion was checked experimentally. The.principal
experimental.characteristic.ifas the relative sensitivity-
P which was d fined as the ratio of th out t signal
e e pu
t
obtained from the device as a photo source and as a po o-
diode. This ratio can be defined by Eq (10). 'The experi--
mental dependence of P on temperature is shown by,the-
solid curve in Figure 3. The dependence of P on tempera-..-
ture for large signals is illustrated by the obtainedline.-...
in Figure 3. The noise in the device when employed as a
nhoto-diode was 0-5 niv $while when used as a photo- el ectric
source,,the noise was 10 JLV. The in- rtia effects in the
e
diode are illustrated in Figurp 5, where the first
oscillogram refers to the phot6s-dlode. operation, while the
Card3/4

240)
AUTHORS: Ryvkin, S. blob Strokan, N. B, SOV/20_124-5-20/~21:~
TITLE: On the Problem of the.Relaxation of
'Non-equilibrium Conductivity in Recombination Through
Traps (K voprosu.o relaksatsii neralvnovesnoy,provodimosti
pri rekombinataii cherez'lovushki)
PERIODICAL: Doklady kkademii nauk SSSR, 1959, Vol 124, Nr 5,
PP 1034-4-037 (USSR)
ABSTRACT: The present paper describes the results, of an'experimental'..,
investigation of the theory for the case of few traps for
arbitrary injection levels. The f.rst part of-this.paper
deals with t~e theoretical inves-..,,Lgation, in'.the course,
of which the authors determine the time-dependence:of them..
non-equilibrium concentration of the carriers for
semiconductors with a type of simple traps,11. The scheme
of transitions corresponding to this case is described.in
form of a schematical drawing, after which the 3,.kinetic
equations and the neutrality condition are written down.
If the total change Am of the. concentrati-on of electrons
in the traps is negligibly small as against n and pl,
Card 1/3

On the Problem of the-Relaxation of SOV/20-124-5-20/62,
Non-equilibrium Conductivity in Recombination Through Traps
(in thepresent paper thesystem.of notation of,W.
Shockley (Ref-4).is Used),, it holds qualitatively that,
during the main.. part of the monotonous. relaxation process-
also dn/dt. a'nd,dp/d,t mu'st,be.prac.tio,ally equal:to.each
o,ther. In thehere investigated case of a.small-'~um'be'rof
traps 1i-fetime:ldepends only on the conc"entratiIon of t~e'_:~
non-equilibrium carriers. and the value of.lifetime':at
that instant is equal to the steady,lifetime,at the same
steady concentration.. A diagram shows the-rel
axation
curve for the injection level n An P
steady 0.
for the cSse T 5(Shockley's system,of notation),
At the beg"nnizg of relaxation the rela atlori.cUrVe is,
X U1
similar to the function e ~/_"Of but.with':increasing...
recombination itbecomes.ever more similar to.:the function'
Thistransition takes place gradually without
any salientpoint, The second part of this.paper,aeals with',
exDerimen.tal ~3heoking. The experimentally found'CUrVeS
for the decrease of photoconductivity agree qualitatively
Cara 2/3 with theoretical results. In the case of asuffi3iently

8 69
The Influence of Adhesion Levels on,the S/181i 60/002YC3/28/028:
Rf-laxation of Photoconductivity:in CdS, Boo6
iBO17
,single Crystals
obtained by:investigating the iltr'uell.quantum yield.of the,.photocurrent in,~
as dependent on-ihe.excitatio .n 1.evel. The initial: stages of Ithe
increase of the photocurrent were examined by means,of.an instrument:_
,schematically represented.,in Fig. I- ~The'instrument and'the measuring.
technique are described. Fig.',2,shows the shape of the photocurrent'curves-
the first 50 msec for.various I irradiation,intensities The higher
theintensity, the steeper,the rise,of,.the,curves and the higher,:the
.relative yield. Fig. 3~,shows:a typical oscillogram for..one of ,the ,samples.'
Fig. 4 shows the growth.ofa,curve with a puls.e-duration,of.10 jisec. . ,it
indicates that the steep rise takes place during thefirst, microseconds.
Hence, rapid processes proceed.at:the first stages of formation of..the,
photocurrent. The results obtained inthe experiments concerning.the.~'~
characteristic features of ~photocur rent relaxation can be.explained in
the simplest way by assuming the capture of carriers by' -typ adhesion
levels. Since the lifetime of,the c.onduction.electrons,with respect to,.-..
their adhesion levels is much shorter than with respect to their:.,
recombination, t he adhesion levels are first filled up within,-a very,
'Card 2/4

81369
'The Influence of Adhesion Levels on thIe. S/181/60/062/03/28/028
Relaxation of,Photoconductivity in CdS BOOVB017
Single Crystals
short time, and only. then the slow establishment of recombination equi-m
librium starts. This is theoretically.investigated in the.following..
dence of*the.concentration of:free'electrons on,
Fig. 5 shows the depen
t/GM, in for different adhesion1ev .el densities-The higher the level
density, the flatter.the rise of n. In the following, theinfluence
exercised by constantexposure on the.first stages,of the increase of~-,
photoconductivity is,investigated. The, existence-of rapid capturing
processes influences-the change of. photoconductivity.in time andp
-especially, the phenomenological yield;and,the effePtivelifetime.of-,
non-ecluilibrium.carrilers.~,Also the character of the dependence.of these
quantities Ion constant.irradiation and its intensi ty-is-considerably
influenced by these processes. Hence, the characteristic features,of
photoconductivity of CdS.are rather to,be.,connected with the complex
~character of recombination processes,lthan with the excitation process.
In an appendix, the influence.exercised by constant,exposure on'the
relaxation of monopolar photoconductivity..in,the,presence of a),(x-type
~,and b).P-type adhesion~levels is investigated.'A. B. Berezin, 0. A.
Card V4

S/I~i/~OW*04/02/034:
B002/~063
2,~-77oo
AUTHORS: Konopleva, R. F.,, Ryvkin, S. M., Yaroshetskiy. I. D.
- - --- - ------- - -- - ----- - -
TITLE: The Problem of the-Thq0ing Cross Section- of Holes in,
Germanium.by.Defects Formed by Gammajrradiation
F*zika tverdogo tela 1960, Vol; 2 No- 4, PP- 566-568
PERIODICAL:
TEXT:, The trapping,cross section of holes byAefects formed,by neutron.
bombardment was found A6,be, 10-15 CM2 (Refs. 1-3). The trapping cross
section for gamma irradiiLtion, was 4.10-16om2. The*present paper shows
that:this difference'is due to a false assumption: A defeat formed by.
~gamma irradiation has not.two but four acceptorlevels in the forbidden
.band. The dependence of the lifetime.on the irradiation with gamma
quanta was determinedon 11 specimens, wherefrom jhe trapping cross,
section of.the holes was.calculated (Table). A CoOO preparation with an
activity of 400 gram-equivalent Ra was used as gamma source., The'authors.,:,
used the-photomagnetic:method,. the method of,'photodiffusion, and the
examination of the relaxation curves,of photoconductivity to measure-the
'lifetime. The mean value of the trapping cross section-was,found to be..,
~3-8-10-15=2. This is close to the.va lue ob tained for*-the neutrons.
,card 1/2

fiwLw

81634
investigation of the Kinetics of Infrared S/1 81/60/002/06/22/650
Impurity Photocon,duction in US Induced by, B006/BO56~
Previous Illumination
photoconduction in US are discussed in part 1. All investigations were..
carried out at 770K on.CdS single crystals onto which.indium contacts
were sputtered in vacuo. Above all, the.,spectral.distribution of photo-
conductivity and the,time-dependence.of.the.,photolourrent were~investi-
gated.jig. 1 shows the,spectral photocurrent distribution, recorded.
u
der various conditions; without illumination
n previous (Curve I) with~
previous irradiation by.green*light, by:leaving,the sample in thedark
for"a longer period of time~,(Curve 2 -photoconductivity is found
b ginning at 3-5,a), aria under simultaneou's constant.irradiation with
white light (curve 3 - whi,ch produces exactly the same,effect)o.ln,the
latter case, distinct photocurrent extinction.with a.maximum at 0.9/.&,
could be observed. Furtheri the time dependence:of infrared photo-
conductivity after previous illumination withgreen.light_of various
~intensities was investigated. Betweeno.the previous illumination and the_
beginning of infrared irradiation the sample was left in the dark for.
40 -60 minutes. The results,areshown in:Fig.' 2. The.photocurrent re-:
laxation at the beginning of infrared irradiation was found.to depend
.upon previous illumination, (Curve.a high intensity, curve.b.- low
p
.,Card 2/3

81634
Investigation of the Kinetics of Infrared Im 'u- S/181/60/002/06/22/05b*:'
p
Photolconduction in,CdS,Induqed:by B006/BO56
Previous Illumination
intensity). In part 2 of this paper,.these experimentallresults:are,
analyzed on the basis of~a model with one, adhesion* level, and the~infra-
red photoconductivity kinetics is calculated for the eds Ie of a Iso-called
"quasi-steady" excited state of the crystal..Fig...3 shows the scheme of
electronic transitions upon.which~the analysis~.is,based.!In,part 3, the
,results obtained by experimental inves.tigation.of the.kinetics of~infra-,
.,red photoconductivity in a qutzai-steady excited stateare given and the
parameters of,the,adhesion level are determined. The dependence.of them
growth and drop times as well as of the steady photocurrent aireshown in.
Figs * 4 and 5. Several particular features of infrared:photocurrent
relaxation in the unsteady state, are discussed.in.part 3.''Further, Iinvesti-,
gations.in this.field are to.follow. The crystals investigated were
produced by 0. A. &Tatveyev and L. V. Maslova. There are 6 figures and
11 references: 4 Soviet, 4 American, and 3 German.
ASSOCIATION: Fiziko-t,ekhnicheskiy, institut AN SSSR, Leningrad (Physico-
technical Institute- of the AS USSR, Lenin d)
gra
SUBMITTED: October 26,
Card 3/3

825h6
The Influence of Adhesion Levels-in Semi- S/181J60/002/007/026/042
conductors on the Steady'Phot6conductivity and B006/BO60
the Lifetime of the Minority:Carriers
of a high injection level. This is done,on.the,model of,,a semiconductor.
~in whose forbidden band there-exist two types of local levels with, sharply',.,.,
dif-fering properties (Fig. 1): the S levels are assumed to be ,traps for the.:,
minority electrons from the conduction band. and the holeP,:from. the:,val6ncy
band., i.e., they are recombination centers for .the light-produced minority...,
charges. The AT levels are, due.-to,electron IPxcha nge~ connected with the
conduction band (the electron exchange with the :valency band is foAidden)9
and therefore they are adhas ion :levels, for the, electrons.,:, It. is shown that,
the.electron and hole concentrations in the,.S,centers,are closely related
to the electron and hole soncentrations'in.the bands the else-
B., g.9 if
tron concentration in the conduction band-is changed, anyhow, theellectron
lifetime -T n - I/ yp. in this b Iand:,is decreased, and,the.hole li,f etime
-r !/T n in the valenoy bandLgrows.-This is the sense in which the:
p P
introduction, of adhesion levels-acts. (I n and are the trapping. factorsEl
P
and p the electron and hole ooncen'trations in the S cent ers; n + p
S, the,concentration of the recombination centers). In the~following
Card 2/4

82546
The Influence of Adhesion Levels in
Semiconductors on the Steady Photoconductivity Boo6/Bo6o
and.the Lifetime of the Minority Ca:rr_,ers
sections of the paper the authors first examine in a. general way the
influence exerted,by adhesion levels in the case of a high injection
level at a low concentration of the recombination centers, and then the
same is done for a semiconductor with-two types of injectionlevels..
In this samiconductor theforbidden band containsg besides the recombine-,.
tion centers S and the adhesion l6vels, M, for, the" eleotronsg.adhesion
levels L for the holes from thevalenoy.band~(Fig..7)* Section.4 again
treats. for a semiconductor with one adhesion level,in,Jhe-forbidden.
band, 'the case ofa high injection level, but aVa, high concentration,6f
the recombination centers S. Finallyq section. 5 deals with., the case of, a
low injection level at anarbitrary concentration of the recombination
centers.. Here, the Fermi quasi-levele of electrons and.holes practically
coincide, and the tra may be classified into adhesion levels and r com-,
'p8
bination centers-only on the basis of the various trapping crose.sections.
(5-9),and (5.10) are first generally derived for -r and .,r ;* f or M 0
n P)
theygo over to (5-1-00 The latter formulas are then further treated f or,
the special oases of an n-type,and a p-type semiconductor.
Ca,rd 3/4

The Real Lifetime and the Possible MechanJISM S/181/66/002/010/010/051-
of the Inelastic Scattering,of..Carriers in B010070
~Semiconductors
concentration of holes of k-th kindq and is the trapping coefficient.
Snk
7 and -C can differ by some orders of magnitude. Adetailed study.is.
An real
made,for comparing these quantities in three special cases. First of all,
it is shown thatfor the impurity~photoconductivity 'CAn 14 Tre :al but the
difference is not large. The intrinsiciphotoconductivitLAY recombination,
with traps is,then investigated. It is found-Ahat for high injection level
when n n0 and p0 (n0- equilibrium concentration of.elbct,rons;,P
0
equilibrium concentration of h-oles) and U con6iderably.exceeds the number
of electrons thermally scatteved-into the conduction band, t'
real A
lo
This does not hold fox ":intermediate", or low injection,levels.-For.. w
:injection. levels Tr The temperature.dependence.of these'
real equilibr.-
quantities'is studied. Intrinsic photoconduction by:,.recombination with"
traps in the presence of adhesion levels is'discussed. A formula fo .rVr a I
e
Is derived. From the cases considered here it is seen that T may be,
An
Card,2/3