SCIENTIFIC ABSTRACT GAMALI, I.V. -

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• Document Creation Date: November 2, 2016
• Document Release Date: September 17, 2001
• Sequence Number: 7
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

3/020/61/137/002/011/020
B103/B215
AUTHORSt Znamenskiy, G. V., Gamali, I. V., and Stender, V. V.
TITLE. Peculiarities of electrodeposition of metals from extremely
pure solutions
PERIODICALt Doklady Akademii nauk SSSR, v. 137, no. 2, 1961, 335-337
TEXT: The authors describe experiments on ~he electrodeposition of the
electronegative metals zinc and manganese from extremely pure solutions.
They found that the chemically pure salts usually used for studying the
kinetics of such processes, do not guarantee the required experimental
purity, not even when they have been recrystallized. Small amounts of
organic impurities in the solution hamper the determination of the influence
of surface-active admixtures on the structure of the cathodic deposit, and
on the value of cathodic polarization. Therefore, the authors used ext-emely
pure ZnSO solutions produced as followss metallic zinc contained lo-5%of
4
admixtures and was produced by sublimation in a nitrogen atmosphere,
Card 1/5

S/020/61/137/002/011/020
Peculiarities of electrodeposition... B103/B215
following the method of the Gi-pronikell Institute. Chemically pure sulfuric
acid was distilled. Water was boiled in potassium permanganate, and then
distilled three times, but 1/3 (first portions) of the distillate was not
used. The solution thus obtained was boiled again, and then for a long
while exposed to c~irrent from platinum electrodes. By using standard con-
centrations (Zn 60-g/l, H 2s04 100 g11) at 200C,the authors obtained from
this solution a current output of zinc up to 60% at low current density
(1 a/m 2) , and up to 99% at 5 a/m2. Zinc, however, was intensively dissolved
already at 30 a/m2 in an electrolyte of chemically pLu-e ZnSO,, which had been
recrystallized three times. The electrode potential of high-purity zinc
without current or with weak current is shifted by 25-30 mv toward negative
values (as compared to the potential of the conventional LkO(TsO) electrolytic
zinc). Only glass parts can be used in the electrolytic cell when using
high-purity solutions, Plastics (viniplast, organic glass, polyethylene)
change the structure of deposited zinc. Crystals become irregular and
small. On the basis of these results, the authors worked out a method of
Card 2/5

S1020,16111371'00210111020
Peculiarities of electrodeposition... B103/B215
measuring the active surface of zinc, which gives well reproducible results,
and is also applicable to other metals (Ref, 5,v- V. 3tender, G. N. Znamen-
skiy, Nauchn. dokl. vyssh. shkoly, ser. khim., 1, 189 (1959)). For similar
experiments with manganese, the authors used an electrolyte of 50 g1l of
manganese (as chloride), and 110 g11 of ammonium chloride. Manganese was
dissolved at pff >1. The solution was purified with manganese sulfide which
was obtained from a previously purified manganese chloride solution and
ammonium sulfide. Ammonium sulfide was obtained by absorption of hydrogen
sulfide by an ammonia solution in water distilled twice. H 2S was obtained
from chemically pure sodium sulfide previously purified from arsenic. After
purification of sulfide, the manganese electrolyte was electrolytically
treated in a glass vessel at a current density of 20-50 a/m2. In the Vessel,
there was an anodic glass cell with a glass diaphragmt a platinum anode,
and a cathode of pure aluminum. The catholyte was constantly stirred.
Anodic gases were sucked off. Munganese hydroxide which was deposited in
the catholyte and oxidized to dioxide by atmospheric oxygen, adsorbed all,
sorts of admixtures from the electrolyte. After filtration, the solution
was subjected to another electrolytic treatment. This process was repeated
Card 3/5

S/020/61/137/002/011/020
Peculiarities of electrodeposition- B103/B215
three times (a-,together for 200-220 hr). Aluminum hydroxide obtained by
anodic dissolution of A-00 (A-00) aluminum in a pure manganese chloride
solution at a (Airrent cLensity of 10 a/m2' was then added to the solution.
Finally, the solution was filtered with a glass filter. From this solu~
tion the authors deposited manganese at 200C, a pH of "I, and a current
2 2
density of only 10 a/m . At 2000 a/m , the current output of manganese was
9011fa. All manganese deposits were of clear crystalline structure, even
when suspended particles of manganese hydrates were added to the catholyte.
The authors hold the opinion that imperfect crystalline deposits of
manganese, or the absence of deposits at low current densities are due to
admixtures in the electrolyte., The authors found that the crystallization
of zinc and manganese in pure electrolytes does not essentially differ
from the electrocrystallization of silver (A. T. Vagramyan, Ref. 8,
Elektrooeazhdeniye metallov - Electrodeposition of Metals -, Izd.. AIN SSSR,
1950). They state that the kinetics of this process and the action of
admixtures in extremely pure electrolytes should be studied. There are
2 figures and 7 references~ 5 Soviet-bloc and 2 non-Soviet-bloc. The
Card 4/5

S1020161113'1100210111020
0
Peculiarities of electrodepoaition.,~ B103/B215
reference to the English-language publication reads as follows: Ref. 2-
0. 11. Bocklis, B., Conway, Trans,. Farad., Soc., 45, 989 (1949).
ASSOCIATION: Driepropetrovskiy khimiko-tekhnologicheskiy institut im.
F~ E. Dzerzhinskogo (DneDropetrovsk Institute of Chemical
Technology imeni F. E. Dzerzhinskiy)
PRESENTED: October 15, 1960 by A. N,, Frumkin. Academician
SUBMITTED: May 9, 1960
Card 5/5

S/080/62/035/001/007/013
D258/D304
AUTHOR% Gamali, I. V. and Stender, V. V.
TITLE: Hydrogen overvoltage on manganese
PBRIODICAL: Zhurnal prikladnoy khimii, v. 35, no.1, 1962, 127-132
TEXT: This work was carried out because of the lack of adequate
information available on the hydrogen overvoltage developing dur-
ing the electrodeposition of Mn from aqueous solutions. The purity
of the electrolyte, used in -the present work, was acceptable on
obeying the following conditions: (a) Mn was deposited on Al at
room temperature at a C. D. of 10 amp/m2; (b) the yield of Mn per
current used at 1000 amp/m2 was 90% and more; (c) Din deposited in
the form of large crystals and was not oxidized in air after dry-
ing. The evolution of hydrogen was investigated in solutions of
(NH 4)2 s04(0.25 N, 1.ON, 3.ON and 5.2 N); Na 23o4 (1 N); and H 2so 4
(0.05 N and 0.1 N). The measurements were conducted in closed., H-
shaped vessel, through which purified hydrogen could be passed;
Card 114e1

!71 frin -:1
S/080/62/035/001/007/013
Hydrogen overvoltage on manganese D258/D304
the direct method of measurement against a thermostatted calomel
electrode was employed. The electrode regions were separated by
means of porous glass diaphragms. A platinqm tablet served as the
anode. This set-up served for measuring the potentials of hydrogen'--
evolution as a function of current density. The plots of the byd.ro.-
gen evolution potential against the log of current density are
shown in Pigs. I and 3. From these and other results it can be
seen that the form of the curves is not influenced by the concpn-..
tration of (NH ) SO , the temperature or by pH. All curves exhibit
at low C. D98 A gudien fall towards the Mn dissolution potential.
The tangent of the straight section of the curve, in the case of
Na2so4 and H2SO4 solutions, is equal to 0.12 and thus near ite
theoretical value. The coefficient a in Tafel's equation is 1.31
at 2500 in the case of hydrogen evolution on Mn in 0,1 N H 2so 4;
its value changes to 1.19 in solutions of (NH 4)2 so4and the cor-
responding tangent changes according to whether the solution is
acidic (.tano(_ -;, 0.16 at pH 6.5) or basic (tanoc = 0.18). The latter
Card 21Y ~

S/080/62/035/001/007/013
Hydrogen overvoltage on mangatieBe D258/D304
value was determined also for Cd and Zn in bhe same conditions,
thus showing that tano(, depends only on the conditions of electro-
lysis. The temperature coefficient of overvoltage was 1.8 mV/OC
throughout. The more negative evolution potentials in Na 2so4 60-
lutions (as compared wit.i solutions of (NH 4)2 so4are consistent
with the assumption of A. N. Prumkin and coworkers (Ref. 12; "Ki.-
netika elektrodnykh protsessov" (The Kinetics of Electrode Reac.-
tions), MGU, 1952), on the existence of a new discharge mechanism
of hydrogen ions, capable of lowering the hydrogen overvoltage-.
BH+ + e--->B + Hads; B + H+ ->BH+
The same explanation is given by V. S. Bagotskiy and I. Ye. Yab-
lokova (Ref. 13: Trudy soveshchaniya po elektrol"-.himii, Izd. AN
SSSR9 M.9 57 (1953)) for the observed lowering of hydrogen over-
voltage on mercury in solutions containing NH+4 ions. Pinally, the
authors Qonsider the possibility that NH3 formed on the cathode
Card 310

3/080/62/035/001/007/013
Hydrogen overvoltage on manganese D258/D304
might dissolve any present hydrates of Mn, thus adding to the fa-
vorable effeCt of NH+ 4 ions on the electrodeposition of this me-
tal. There axe 4 figures and 21 references: 15 Soviet-bloc and 6
non-Sbviet-bloc, The references to the English-language publica-
tions read as follows: R. Dean, The Electrolytic Mangatiese and its
Alloys., N. Y. (1952); B. Newbery, J. Chem,, 30(-., 11055, 24,9?(19141);
109, 1051, (1916); A, N. Campbell, J. Chem. Soc. 123, 2323,(1923).
SUBMITTED: June 28, 1961
Card 4/6, 1V

G !LL LIP; STENDUI V.V.
Action of some impurities and addition agenta on overvoltage for
hydrogen liberation on -an anese. Zhur.prikl.khim. 35 no.11:2436-2439
N 162. (MIRA 15:32 )
(Hydrogen) (Overvoltage) (Manganes# plating)

DANILOV, F.I.i STENDER, V.V.
Size correspondence In the electrGdeposition of manganese.
Zhur. prikl. khim. 37 no.2$337-342 F 164. (KIRA 1739)
1. Dnepropetrovskiy khimiko-tekhnologicheskiy institut.

DOXASHOVA, A.A., otv.red.; POPOVA, L.I., red.; qAMA11TWTA,.N.A... red.;
SORONBAYEVA, N.Y., red.izd-va; ANOXHINA, M.G., tekhn.red.
[Materials of the First Coordinating Conference of Mycologists of
the Central Asian Republics and Kazakhstan, 19551 Katerialy Pervogo
koordinatsiQnnogo soveshchaniya aikologov respublik Bredney AzU i
Kazakhatana. Frunze, lzd-vo Akad.nauk Xirgizakoi SM. 1960. 182
(MIRA 13:9)
1. Koordinstsiounoye moveshchaniya mikologov respublik Sredney Axii
i Kazakhatana. let, 1955. 2. Inatitut botaniki AN ilirgizakoy SM
(for Gamalitakays).
(Soviet Central Asia--Kyeology)

DOMASHOVA, A.A.; GARALITSKAYA N A
:t~-
Now species of fungi from the central Tien Shan. Bot. mat. Otd.
spor. rast. 15:74-80 Ja 162. (MIM 15:10)
(Tien Shan-Fungi)

GOIDVINS P.11.; GAMALITSKAYA, N.A.---,-
New genus of the family Erysiphaceae. Dot. mat. Otdo spore raste
15:91-93 Ja 162* (MIRA 15:10)
(Kabakto Mountains-Mildew)

ELICHIBAYEV, Adollf Aydu.-havich; GAVIALITIMAYA, N.A.., ot-v. red.
[Blible mushrooms of Kirghizistan] S"edobnye griby Kirgizii.
Frunze., 17,d-vo AN Kirg.SSR, 1964. 44 P. (141RA 17-5)

? I I 11 - I ~N , !1;j ;q
GAMALITSKAYA, Natallya Antonovna; TARBIBSKIY, S.P., otv. red.
---- ------ ~ - I I --- --I-- - - I
[1,,'dcromycetes of the southwestern part of the Central
Tien Shan] Mikromitsety iugo-zapadnoi chasti TSentrall-
nogo Tian'-Shania. Frunze,, Izd-vo AN Kirg.SSR, 1964.
172 p. (MIRA 17:5)

GAR"ITSETY, V. A.
Mechanizing the convoying and delivnry of feedu at a ovine-
-fattening farm. Biul.tekb.-alcon.inform. no.10:62-66 ' 58.
(MIRA lltl2)
(Swine brooding)

GAMALITZ-KIY, V.A.
Mechanized removing of manure from hog-fattening houses. Sbor.
nauch.-tekh. inform. po elek. sellkhoz. no-7:15-19 '59
(MIRA 13:9~
(Swine housee and equipment)
(Farm manure)

I
GAMALITSKIY, V.A., inzh.
Use of mobile electric machinery with flexible power supply lines
in stockyards and dairy barns. Nauch. trudy VIESKH 11152-65 162.
(KRA 16:3)
(Dairy barns--Electric equipment)
(Stockyards--Zlectric equipment)
0

, GAMANt B,A. [Haman, B.O.]
- --------
Using electric prospecting for the investigation of slides.
Geol. zhur. 20 no. 5:70-74 160. (MM 14: 1)
(Utndalides) (Electric prospecting)

GAIMAN, B.A.
Nomogram for calculating the coefficients of a fmr-point setup
with arbitrarily arranj;ed electrodes. Geofiz.sbor.no, 5:66-67
163. (MIRA 17:5)
1. Kiyevskava geofizicheskaya razvedochnayn ekspeditsiya.

GAMAN, B.A.
---
Forecasting the water potential of crystalline basement rocks
according to the data of combined profiling. Geofiz. sbor. na.7:
155-159 164. (MIRA 17,11)
1. Kiyevskaya geofizicheakaya razvedochnaya skspeditsiya tresta
"Ukrgeofizrazvedka.1'

Possibility of evaluatGg the specific resistance of the rocks of
a cryatalline bhsement in the presence of the effect of Infinite
resistance. Geofiz. abor. no.9188-90 164.
(MIRA :L816)
1. Kiyevskaya geofizicheskaya razvedochnaya ekspeditslya tresta
"Ukrgeoflzrazve,lka".

GAMAIT, B.O. [Haman. B.O.]
Using, stepwise curvatures of vnrtical oloctric logging graphs
in prospecting for water-bearing areas in crystaMno rocka. Nauk.
zap.Kylv.un. 16 no.14:233-238 157, (MIRA 13:4)
(Water, Underground) (Prospecting. Bloctric)

SHAINSKIY, A.M. [Shainsk7i, O.M.]; GARAN, B -..0-. LHaman, B.O.]
Using the electric method in prospecting,for water contained in
Cretaceous marls of the Lvov trough. Geol. 2hur. 19 no.4:103-107
'59. (MIRA 13:1)
(Ilvoy Frovince-Marl) (Electric prospecting)

GAMAX, M.S., tekhnik
C--
SupplY of 380 v a.c. power to industrial electric trucks*
Prom.energ. 18 no.ls29 163. (mm 16s4)
(Industrial electric trucks)

WMUT, Ilicolae,, prof. (Ploicsti)
Geographical reading hall of our irichool. Matura Geografte 13 ne.3:?l-
75 I-TY-Se 161.

G-2
USSR/Electricity Dielectrics
Abs Jour Ref Zhur - Fiz1ka, 110 1, i958, 1242
f
Author Prcsnov, V.A., Gaman, V.I.
Inst Siberian Physical-Technical Institute, T=k.
Title Dependence of the Electric Conductivity of Glass on the
Electric Field Intensity.
Grig Pub : Zh. tekhn. fizilu, 1957, 27, Ito 5, 936-939
Abstract : A formula is derived, characterizing the electron conducti-
vity in a strong electric field.
Card 1/2
USSR/Electricity - Dielectrics G-2
Abs Jour Ref Zhur - Fizika, no 1. 1958, 124-2
where n 0'is the total concentration of the cations in the
glass, I the average distance between the cmtions, ,,
the frequency of the natural Oscillations of the cations,
q the charge Of the cations, E the electric field inten-
sity, U the difference in potential energy of the Lon in
regular and irregular states, and .~% U the enerE7 of ac-
tivation.
The formula derived is in good agreement with the cor-
responding empirical equation (obtained by Pool):
E
e , where 3q /2kT. It follows the-
refore thac at a temperature of 40c c, in the case of si-
licate glass; '; the 1.7 x 10"' cm/v, which ir, in
good agreement witH ?Re values of obtained by va-
rious investigators exp 1.7 x 10 cnVv).
Card 2/2

AUTHOR PRESNOV~ V.A.,GAMAN~ V.I.$
TriTLE On the Connection Between the Electrical Properties of Crysta16 and
the Parameters of the Crystal Lattice.
(0 avyazi elektricheakikh svoystv kristallov s parametrami kristalli-
cheskoy reshetki-Ruseian)
PERIOD'ICAL Doklady Akademii Nauk SSsh,1957,vol 114,Nr %pp 67-69 (u.s.s,R.)
LBSTRACT The paper under review computeagon basis of rough oalculation~the de-
pendence of the electric resistance of crystals on the parameters of
the lattice.In presence of a strong electric field the mean energy of
the elec#ron-taking into consideration the interaction with the ph.--
non gas-amounts to 6-,,mv2,eEl(v/a), eE(!/a)1__(k_T/mT. In-this context,
m denotes the mass of the electronok the Boltzmann constant,T the ab-
solute temperatur*9E the electric field intensity,! the free length
of path of the electron,& the velocity of propagation of-the phonons
(in the case under oonsideration#one thinks of the beginning of the
acoustic branch of-the eacillations).The aleotriai breakdown of the
crystal takes place when the energy of the oleatrons is higher than
or equal to the width of the prohibited zone,Therefore the oondiIJon
of breakdown may be written in the following form3 eE diz (l/a)T(_k_TTW_Uo.
In this context,u stands for the width of the forbidden kone inthe
energy spectrum J the orystal.Then the paper under review lists an
expression for the velocity of propagation of the phonons and substi-
Card 1/2 tutes it into the condition of breakdown~Thus we obtain for NaC11 the

On the Connection Between the Eleatricil Prop-'trtlea of
Crystals and the Parameters of the Crystal Lattice,,
I
breakdown field-intensity Edu(NaC1),1.924'1o6V/cm.,This value i arrivad
at by computation,is in good agreement with the experimental yalue.
Thenthe paper under review prooeeds to list an expression for the oo-
efficient of the quasi-elatio condition and substitutes it into the
formula for the breakdown field-i,ntensity.ThiAs we obtain)a,fter fliodl-
fication of all oonstantst, 1/2U1/2
0 0-85 n u./r. 2(M.., Md.).
du
In this oontextqU denotes the energy of the crystal lattice per ion
pair,r the lattice constant, M1 and M2 the miasees of the particles
conBtituting the oryetallwhereae n has different ~falues Japending on
the data listed by different authors.The curve Edu"F(udu.') must bp
straight line;certain experimental data are more or less in agreement
with this assumption.The electrical resistance of crystals and the
critical field streN~th(at which lattice constant,and oii tho masa of
the partiolea constituting the crystal.
(I reproduction and 1 chart).
ASSOCIATION Siberian PhLaioal-Teahnological InatitutepState University Tomsk~
PRESENTED BY IFFE A.F., ember of the Academy.
SUBMITTED 1 .12-1956
AVAILABLE Library of Congress.
Card 2/2
b

20-5-33A8
A TYT'HORS t Gaman, V. I. and Krasillnikova, L. M.
TITLEs Polymorphous Transformations of Silica in Silicate Glass
(K voprosu o polimorfnykh prevrashcheniyakh kremnezema v silikat-
nykh steklakh)
PERIODICALt Doklady AN SSSR, 1957, Vol- 116, Nr 5, PP. 83B - 840 (USSR)
ABSTRACTs According to modern conceptions glass consists of various domains
which are connected with one another and have no phase separation
limits. A part of these domains consists on the whole of silioa.
In the inner of these domains there are sections with a high degree
of order. The first form the amorphous component, the latter -
the crystallites. Howevort the presence of orystallites in a no-
ticeable quantity is doubted. All experimental proofs of their
existence have one fault: there is no possibaitytD determine quan-
titatively the mentioned components of the glass. In the present
paper the attempt was made to determine beside proving the exist-
ence of the crystallites also their quantitative content in glass.
Final conclusions: 1.) By the investigation of the temperature de-
pendence of the coefficient on Pull it was shown that in the bo-
Card 1/2 rosilicate- and technical glasses polymorphous temperatuietrans-

Polymorphous Transformations of Silica in Silicate Glass
20-5-33A8
formations occur. 2.) The binding of the froe silica of the glassets
by matal oxides leads to the vanishing of the polyttiorphous trans-
formations. 3.) One succeeded to fix thermographically the poly-
morphous transformations, however, only in glasses which befors
had been exposed some time to a temperature of from 600 to 700 -
4.) The seyAtivity of the thermal method has turned out to be in-
sufficient for the fixing of polymorphous transformations ill not
prehedted glasses. The inveotigation of the temperUturc deponderice
of the coefficient facilitates to determine their oxi8tence
also in such glasses. There are 3 figures, and 5 references, all
of which are Slavic.
ASSOCIATION: Physical-Technidal'Institute, Tomsk State University im.
V.V. Kuybypbov ';'.1
(2iziko-tek~nicheskiy institut pri Tom3kom gasudarstvennom tiniver-
sitete im. V. V. Kuybysheva)
PRESEITTEDs May 15, 1957, bY A. A. Lebed.ev, Academician
SUBMITTED: May 15, 1957
AVAILABLE: Library of Congress
Card 2/2

V.I., '.',--iid Phyc';-,:c-th "Btudy of the cloctric
propol-tion Of solid diclcoturloo ill '.OW'7~Al vtt.;ctrid fi~alklv"'
isk, 1958. 8 pT) (Min of Highor I'Llucation 11j"R. ~A-to U ir"i
V.V. fatybyohov), 100 co:.do-. KL, 29-5 "~, 106)
L>

FRESNOV, V.A.; GAMAIT, V.I.
Electric conductivity of glass and ite depend pce on the strength
of an electric field. Izv. vys. ucheb. zav,:' C. no.2:92-94 158.
(MIRA 11:6)
1.SbirskJ7 fjziko-tekhnicheski3r institut pri Tomakom gosuniversitete
im. V.V. Kuybyahevs.
(Glass--Electric properties)

AUTHOR: Gaman, V. I. I SOV/139-58-4-26/30
TITILE: --IiiVe-s-t1g-atio~-'-of the Electric Conductivity of Glasses
in Intensive Electric Fields (Issledovaniye elektro-
provodnosti stekol v sillnykh elektricheskikh polyakh)
PERIODICAL: Izvestiya Vysshikh Ucheb kh Zavedeniy, Fizika,
1958, Nr 4, PP 158-162 (USSIR
ABSTRACT: Paper presented at the Inter-University Conference
on Dielectrics and Semiconductors, Tomsk, February, 1958.
Poole (Ref 1) and numerous other authors have shown that
the electric conductivity of glass in strong electric
fields does not comply with the Ohm law and from a certain
critical field strength onwards the electric conductivity
increases with increasing field strength according to the
law: aE
Cr = CY0e (1)
where a electric conductivity in a strong field;
CFO electric conductivity in a weak- field;
E the electri-- field potential;
Cardl/3 a coefficient.

SOY/139-5874-~6/30 .
Investigation of -the Electric Conductivity of' Glasses in Incensive
Electric Fields
The aim of the work described by the author of this pa*Der
was to establish the temperature dependence of the Pooie
coefficient a and to elucidate the causes of its jump-
like change in the temperature range where polymorphous
transformations of the silica take place. The ej . ents
,~erim
have proved that in presence of a high voltage p arisation
the Poole coefficient oL of glasses is either independent
of the temperature or increases slightly with increasing
temperature. In the temperature ranges which correspond
to the polymorphous transformations of various modifications
of free silica, the coefficient a shows maxima. Thereby,
with decreasing silica content in the glass the magnitudes
of these maxima decrease until complete_ essatiog. From
a certain current intensity onwards, 10 9 to 10-;' A9
the coefficient (x increases relatively sharp y wit
increasing temperature. The magnitude of -the critical
field strength E cr either does not depend on the
temperature at all or decreases with increasinG temperature;
Card2/3 in the temperature range of polymorphous transformations
of the silica, the temperature dependence curve of E cr

SOV/139-58-4-26/30
Investigation of the Electric Conductivity of Glasses in Intensive
Electric Fields
shows a minima. The results of measuring the temperature
dependence of the Poole coefficient oL and of the
potential of the critical field indicate that the glass
contains ordered micro-zones of silica which are
susceptible to polymorphous transformations.
Acknowledgments are made to V. A. Presnov under whose
guidance this work was carried out.
There are 5 figures and 8 references, 7 of which are
Soviet, 1 English.
ASSOCLkTION: Sibirskiy Fiziko-tekhnicheskiy institut pri Tomskom
OBuniversitete imeni V. V. Kuybysheva
berianPhysico-Technical Institute at the Tomsk State
M
University imeni V. V. Kuybyshev)
SUBMITTED: March 10, 1958
Card 3/3

GiVI*d1i) V. 1. (~;Pn)
"The temperature course of the pool. factor in the case ar fMicate - and boron
silicate glasses is to a considerable extent determined by the temperature
dependence of the polarization potential in the case of the existence of
a high-voltage polarization"
Peport presented at a Coafereace on Solid Dielectrics cmd Semiconductors,
Tomsk Folytechnical Inst., 3-8 Feb. 58.
(Zlektxlchestvo~ '58) No- 7P 83-W)

GA~W-T, V.I.; PMXALISKIY, V.A.; KALIXI?~TINOV, G.T
Effect of a strong field in germanium p-n junctions. Izv.v7s.ucheb.
zav*;fiz. no*2:3-9 160. (MIRA 13:8)
1. Sibirskiy f12iko-tekhnicheskiy institut pri Tomakom gosuniversitete
im. V.V. Kuvbyeheva.
(Semiconductors) (Blectric fields)

GAMN, V. 1.
Iffect of temperature on the Fbole affect in silicate and borosilicate
glass@*. Isv.vYv,Uch*b*xav,;fiz. no.2.-1,19-133 160. (MIRA 13t8)
1. S'ibirekly fisklo-tekhnicheskiv institut pri Tomekom gosuniversitets
im. V.V. luybysheva.
(Glass-Ilsotric properties)

eywitsksy., 1. It. Wen160100010310211023
=05/bma
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8P--,057
S/139/60/000/006/025/032
'~3 0 q3, //5Y) E201/E49J.
AUTHORS' Gaman V-1- and Perkallskis. B,Sh,.
TITLED The Dependence of the Impact Ionization Coeffitiant
on the Electric Field Intensity in Semiconductors
PERrODICAL. Izvestiya vysshikh uchebnykh zavedeniy. Fizika,
1960, No~6, PP,,157--160
TEXT Wolff (Ref..I) obtain#d an expression for the impact
ionization coefficient a assuming that electrons lose energy
only by interactions with optical lattice vibrations,, Wolff
considered also for the effect of impact ionization on the
electron velocity distribution function, Groschwitz (Ref.2)
used an electron velocity distribution function which allows for
el-ettron interactions only with acoustic lattice vibrations,.
In weak fields, Groschwitz's expression for a was found to
agree with experiment better than Wolff's expression,
Wolff's formula was better in strong fields. The present
paper considers impact ionization on the assumption of' electron
interactions with both optical and acousti,~ vibrations, The
Card 1/2

88o-5*"
S/139/6o/ooo/oo6/025/032
E201/E49i
The Dependence of the Impact Ionization Coefficient on the
Electric Field Intensity in Semiconductors
authors use the electron velocity distribution function derived
by Chuyenkov (Ref 3), Two expressions are deduced for the
nonization coefficient one valid in field.s up to 5000 V/cm
in germanium and 27000 V/cm in silicon (SL=Ilar to Groachwitzus
equation); the other valid in fields greater than 5 x: 1o5 v/cm
The second expression agreed with the expfrimental i-alues for
stlaton, as shown in Fig.1, where the continuous line is the
exper-Iment-al dependence and the dashed line repr,esenlts the
spcond expresAxon deri'ved in this paper, There art .1 figure
and 5 referencea 2 Soviet and 3 non-Soviet.
ASEOCIATION Sibirskiy f1Ziko-tekhn1cheiskiy institut piri
romskom gosuni-ver-s2tete imeni V V,.Kuybyah,eva
(Siberian Physicotechnical Institute at Tomsk
State University ineni V,V.KuybysheY)
SUBMITTED. Octobtr 22, 1959
r"ard 2/2

85164
5;, Y-?o 4) (/,' 3 7, 3 t,
AUTHOR: Gaman7 V.I..
TITLE: ralanche Breakdown
S/11%60/000/005/014/031
E20 / 191
in P--N Junctions;k
PERIODICAL: Izvestiya vysshikh uchebnykh zavedeniyj Fizikaj
196o, No. 5, pp 82-87
TEXT: The author derives an expression for the avalanche
breakdown voltage (denoted by U ) in terms of carrier
densities. The treatment deals"goth with abrupt and with linear-
gradient p--n junctions. The experimental (curve 1) and
theoretical (curve 2) dependences of the breakdown voltage on the
difference M between donor and acceptor densities are plotted
in Fig. 1 for abrupt p--n junctions In silicon. Both
dependences can be described by .66�0.01
T-n P = kN-0
where k is different for curves 1 and 2. Curve 2 (theoretical)
gave values of the breakdown voltage three times higher than the
experimental ones, because of various simplifying assumptions in
theoretical calculations. The theoretical expressions for the
Card 1/2

;i ,~, H I.
8/139/60/000/005/014/031
9201/E191
Avalanche Breakdown Jn P--N Junctions
breakdown voltage and the dependence of the avalanche
multiplication factors on voltage were very similar for abrupt
and linear-gradient junctions..
There are 1 figure and 4 references: 3 Soviet and 1 English.
ASSOCIVION: Sibirskiy fiziko-tekhnicheskiy institut pri
Tomskom gosuniversitete imeni V.V. Kuybyshe
SUBMITTED: November 21+, 1959
Card 2/2

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Mol.h ... v, R.L. Ry~.Iler, Y..A. F-y-E-hit., Che-I--., N.A. T07-,-, V.K.
Tlorinn~-%ya, A.K. Ya~.klnl; Ed. or Y-ubli&hIng Eo,~e: '..V. Suvcrot; Tech. !-4.-
V.T.
PURPOSE; This book is Int-Ite. for m.-carchers In the science and t,"h.01OZ7 of
COMVZEi The bc~k ccoLa.!~s the rep,~rt& mnI dlac~sqms or tli~ Tntra All-Uricm
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cbe-1-1 bo--A -4 gl", tmct~rt, ezd the Cf ell-n- r~,-!
SILIcu, tec=~Icn of v't-iflcatlozi, optical propert:e4 atd glass st-ture, s,nd
". el.ttri-I jrc,.rrt1... of gl-e. ." also A .=btr of the re-
part-s deal with tLe depa~=dtace or gt~a properties m emposiuca, the t-mtinc of
glsos-o "a raAlation. effects, and rechaalce.1, tact-fCal, And ctmIcal p=per-
ties of glasses. O%her par~ra tIr~t rlu3 *=Ae=d-aC%o- and solm
glasses. T'ne Conferecte v" atte=!~I by Core than -00 deleZutes frm So"Iet Z!
East Ge~=n ArienLifIc Cri:stI:at!c~. Az~.e the pw-jclj~ttz In the
vere X.V. Solocin, Te. V. Euv&t~inztly, T~.A. Gmat-, Y.F. Pry%.I~isbiikoav T- Te.
Go'llb, O.r. Mm.d1cm-fetrocyna, G.P. S.K. F.tro~' A.M. Lst-,, D.11.
L-In. A.V. .9h.tilom-, X.T. Plooh-ninskly, A.Ya. rwzetsov, E.Y. Da,;ty&rc%,a, Z.V.
Byuremno,sk~yft, A.A. rlltlov, K.K. Skmmymk~, P.YL. EO=n, EX. LfllCr, 1-A.
Kaznetaov, V.P. Potd-tv, B.S. S-1t%-ch, L.G. F--r, "d O.S. mclct~-.
The final session of t--- C~f.rczae - Ltlrr.s~d t.,, Prof-or 7.1. rityez-~-'!.Uy,
Honaral Scientist ~d E=.zlnecr, Doctor of Tat~,ajc^l Sciences. Tac roll-lIzz
inut1tat- vrro cite! fr. ttei- -. t~,
d_rjoyeent of gl,es xcl-
and ~'Icntskly I-jt!"t (State C,;-lcsl InAtIt~-r),
laatit~t fit" '~. K,
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Flzio~~kly AV (Pnyntca Institute A:,
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uicfilbk-~O steklu (-':t4'- Itrtitit, ror Y;Ieztr'czi --r), SltlrsL%~,
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LOT

GAKUlp V.I.; PERKALISKIS, B.Sh.
1. ~ I
ffect of the electric field intensity in semiconductors on the impact
ionization coefficient. Izv. vys. ucheb. zav.; fiz. no.6:157-160 160.
.,P (MIRA 140Y
-1. SftAr&4Xfiziko-tekhnichaakiy institut pri. Tomakm4pummivezaitete
imeni VA.-Kii-y-byaheva.
(Ionization) (Semiconductors)

L 18994-63 EWP(q)/9WT(m)/BD3 AFFTC/ASD/ESD-3 Pq-4 WH/JD/J9
ACCESSION NR: AT3002454 S/2935/62/000/06010207/0211
AUTHOR: Garrian, V., L. Sirotkin, A. A.; Stenina, V. M. 9
TITLE* Effect of As-S-1 low~melt glass on current-voltage characteristics of
isilicon p-n junctions [Conference on Surface Properties of Semiconductors,
Institute of Electrochemistry, AN SSSR, Moscow 5-6 J-une-fg-OT-
SOURCE: Poverkhnostny~e evoystva poluprovodnikov. Moscow, Izd-vo AN SSSR,
1962, 207-211
TOPIC TAGS: low-melt glass, current-voltage characteristic, semiconductor,
silicon, silicon junction
IABSTRACT: ExpeTAmental ~tudiesTre descxibed of alloyed Si junctions hot- i
icoate with 24fa As 67% AP- 9% '#glass. fthe dielectric constant of the glass
_EW
as 6 !"'t, its tg was (4._5_-T_.4)_x fu,:-3 at 30 - 10, 000 cps. Al was alloyed into a-St
W
with a resistivity of 10-15 ahrns. cm. The junctions were dipped into the glass
melt at 250-300C for I min, then aged for 30-50 hre at 130-150C, then subjected
Card 1/2

L 18994-63
ACCESSION NR: AT3002454
1 to tropical humidity for 75 hro, and finally went throu& 3 thermal 70-rrAn cycles
-60+ 130C. Reverse current-voltage characteristics were determined at various
stages of the above treatment, It was found that the glass acted as a getter
absorbing contaminants from the surface of the junctions. that the glass was
moisture-resistant and that its dielectric loss was low. "In conclusion. the
authors wish to thank B. V. Makarkin for measuring the dielectric characteria-
tics of the glass. 11 6~ig. art. his: 4 figures and I formula.
ASSOCIATION: Tomskiy gosudarstvenny*y universitet im. V. V. Kuyby*sheva
[Tomsk State University)
SUBMITTED: 00 DATE ACQ: 15May63 ENCL: 00
SUB CODE: PH NO REF SOV; 002 OTHER: 005
J Card 22

~,j
0 0 1, /,5.0) S/139/61/000/002/011/018
E032/E4i4
AUTHOR: Gaman, V.I.
TITLE: On the Law of Increase-of the Reverse Current in
Germanium p-n Junctions
PERIODICAL: Izvestiya vysshikh uchebnykh zavedeniy, Fizika,
1961, No.2, PP-110-113 ,
TEXT: It is known that the reverse current through a j)-n junction
begins to increase at large voltages. Measurements carried out by
the present author and V.A.Perkallskiy and G.V.Kallestinov (Ref.2)
showed that under certain conditions the reverse current varies
with the applied voltage in accordance with the formula
Cl W
I cv%e V%
where c and cl are constants for given specimens. 'However it
was found that in many cases this relation is not satisfied. In
order to elucidate the effects responsible for the form of the
reverse characteristic, the present author has investigated
selecM plane triodes of type T71 (PI). The collector
Card 1

21516
S/139/61/000/002/011/018
On the Law of Increase of ... :~032/e4i4
characteristics of the triodes were obtained using voltage pulses
10 to 30 sec long. It was found that the collector~characteristics
of these triodes are very similar to. those of diodes Ar I LL 22
(DG-Ts22). Thus, for example, Fig.2 shows the reverse current-
voltage characteristic and the collector current cbange (4 1) for
the ME ME) triode at 180C. Analogous curves for the 1716
(PlB) triode at 200C are shown in Fig.3. It is argued that
ionization by collision,,Siving rise~to current carrier
multiplication, in due to surface effects. This occurs for
voltages not exceeding 0.9 of the breakdown voltage. At higher
reverse voltages, the increase in the current is due to volume
rather than surface effects. Fig.4,shows the reverse volt-
ampere characteristic of the rl l'J1Q (PlZh) triode and the
jir-lk27 (DG-T927) diode. There are 5 figures and 5 references:
I Soviet and 4 non-Soviet.
ASSOCIATION; Sibirskiy fiziko-tekhnicheakiy institut pri Tomskom
gosuniversitete imeni V V.Kuybysheva (Siberian
Physicote~&Knical Instit;te at the Tomsk State
University..*,imeni V.V.Kuybyshev)
Cai-d 2/4

On the Law of Increase of ...
e., to,vw &Y YAt%
Fig.4.
Card 4/4
15 16,
S/139/61/ooo/oo2/011/018
rl032/E4i4
A-L
X0 AV
4W
Fig.5.

Ell
L 13o27-63_ EWT(1)/EWO(k)/EWV(q)/SWT(M)/BDS/:E;i;CC(b)"~~2 AFrrc/
Pz-4
ACCESSION NR:- AT30020.86 S/2927162/0~01000/Olql/6105!-~
AUMOR: Osman., V. I.1 Wy*gin!&,.j!=E.
TITLE: Reverse current-temperature characteristic of gft n junoti6ns
[Report of the All-Union Conference on Semiconductor biv_16 V-s-s"'ad(Vin
from 2 to 7 October 1961]
SOURCE; E3.ektronno-dy*roch:ny*ye pwekho&y* v poluprovodnikakh. Twshkent, Iz6-vo
AN uzssR, 1962, 101-105
TOPIC TAGS: germanium transdstAx~, germanium transistor reverse current-
ABSTRACT: The reverse branch of the current-voltage characteristic of IndustrIal
Ge diodes can be subdivided'into 3 sections: (1) a lov-vatage, section where
the reverse current slowly grows with bias; (2) a section corresponding to the
voltages up to 0.9 of the breakdown voltage where the reverse current sharply
increases; (3) an impact-ionization and breakdown section. Reverse
characteristics and collector-qugent increments were measured for various
emitter currents in a p-n-p_Ln.'Moy special Ge transistor. Effect of temperature
on the collector current, for various collector voltages, was %easured within
-160 +22C range; at higher collector voltages, the collector ctirrent passeb
C.,d 1/2

L 13057-63
ACCESSION NR: AT3002988
through a minimum which lies In the.negative temperature rage. It wu
foiuid
that, at room temperature, the reverse cutTent reaches itvateadji-state Velue j
in 30 microsec; at low temperatures it is still far short of its ultimate value
and hence changes sharply with the voltage-pulseL duration. Curv6s. illustrating
i the above relationships are presented in the article, Crig,,, art, haB:' 3 figures,
and 3 formulas,
ASSOCTATION: kmdemiya nauk SSSR (AcadenW of Sciences SSS1j) Akademiya nauk
Uzbekskoy SSR (AcadmW of Sciences UzSSR) Tashkenskiy gosudez-at~eraW*y I
universitet (Tashkent State University)
SUBMITIED! 00 DATE ACQ: 15ft63 BNM: OD
SUB CODE: 00 No REP SOV: 004~ OTIM; 097
Cord 2/2
- 96
-2-7

,ACGESSION NRt AT3003015 S/2927/621000/00010254/0'2.0
'AUTHOR- Presnov, V. A.; Ga*an, V. L1 Sirotkin, A. A.
?'TITLEs Effect of a low-melt glass coating on the oharacterla'tios:of silicon p-n
~junctions [Report at the All-Union Conference on Semiconductor Device's-,-Ta-sbkent':
',2-7 October, 1961]
ISOURCE: Elektronno-dy*rochny*ye perekhody*.v poluprovodnikakh. T"hkent,'Iz dt-vo
!AN UzSSR, 1962, 254-258
1TOPIC TAGS: silicon transistor, silicon junction
1ABSTRACT: Excessive surface leakage currents in silicon p-n junctions caus.elpara-
imeter instability and other undesirable effects. Theoretically, these currents can.
The suppressed by coating the silicon with a low-melt glass. Two:types of glass wersi
;investigated expprimental-ly: As - S - I and As - S - Tl; they melted at 500-00001.
;'Their c and at 9.24 x 10P cps are reported in the article.Al-n-silic.on
!Junctions were coated with glass, measured, then subjected to -60 4-130C cycle
ithree times, and measured again. The results were inconclusive: some specimens
iexhibi.ted increase, some decrease in the reverse currentsl in other specimens the
Card

L 12819-63
reverse currents did not change. T1-glase coated D808 stabilitron~s~showed dat:eriora-'
tion of characteristics, The results are discussed and partly atti-ibuted to:dhemi-
i
sorbed molecules on the surface of silicon. Orig. art. has: 2 figures) 5 fomulas,
land 2 tables.
j1ASSOCIATION: none
SUBMITTEMs 00 DATE ACQ- 15May63
tSUB CODEE: PH, GE NO REF SOV: 002 OTHER.. 009

FRESNOVY V.A.; GAMAN V.I.
-
Interuniversity scientific and technological cmeerence on
semiconductor physie4.(surface and contact phenomena). Izv.
vys. ucheb. zav; fiz. no.1:176-177 163. (MIU 16:5)
1. Sibirskiy fiziko-tekhnichaskiy institut pri Tomakom
gosudarstvennom universitete imeni, V.V.Kuybyeheva.
(Semiconductors-Congresses)

ACCESSION NRs AR4034481 8/0058/64/000/003/gOS3/20.Si
SOURCEs Ref. zh. rim., Abs. 33419
AUTHORS: Gaman, V. I.; Gitellson, G. Perkal'skis. B. Sh.
n_
TITLEz Effect of a strong field and temperature dependence of i
verse current of alloyed germanium junctions
CITED SOURCE, Izv* Leningx* olektrotakhn. in-ta, vy*p. S1, 19630
19-24
TOPIC TAGS: germanium junction, alloyed germanium junction, pn
junction, collector current increment, inverse-current, inverse
characteristics, surface state filling, carrier multiplication
TRANSLATION: The static inverse characteristics of the p-n junction
and the increment of the collector current (AI) for a given emitter
current were investigated in Ge transistors, while the temperature
C; ~d_ 1/2.-

ACCESSION NR: AR4034481
dependence of the inverse current I was investigated in diodes. A
decrease in the inverse current with time is observed in the static
measurements, and the time of establishment of the inverse current
increases with decreasing temperature (T). This is connected with
the filling of the slow surface states, which increases the negative
surface charge and leads to a decrease in the multiplication on the
surface. This also explains why AI is smaller in the static mode
than in the pulsed mode. An investigation of the temperature de-
pendence of I shows that the I (T) curve has a maximum in-'the region,
3 3
of below-zero temperatures, at voltages close to breakdown. The in-
crease in I is attributed to multiplication of the carriers on the
3
-
n junction surface at low temperatures. The reason for the appear_~
p
ance of the maximum on the I (T) curve remains unclear. G. Stepanov.~
3
DATE ACQ: 10APr64 SUB CODE: PH ENCL: 00
Cdrd 2/2

FREa:OV !.,)f. ) CA';. 1,,~d
"V. COG.
[Surface and junction effects In ..em-icoriductors] Foverkh-
nostnye I kontaktuye iavlon-Lia v poluprovodnilnkh. Tomisk,
Izd-vo Tomokogo univ., 1964. 505 1). (MIRA MI.)
1. Tomok. ,"ibirskly fiziko-U-,khzAche-,ikly nfluuhno-i~inlodo-
vat.ellskiy institut.

j
64V3- W(1D)/W6r)/EWP( Y/W(b)~ 10/W
UR/0000/itq/006/600/0
ACCESSION 9R- -ATS020458 a3l/o;
"00%
AuTHOR: rotkib, A. A.; Gamab, V* I.004ant)l Himayloval t. (0 Pr ;eanoi I A~
Si
-(Professor)
TITLE, Using inorganic glasses for the proteOtioil of semiLlliitiduc4~~! devices
SOURCE: Mezhvuzovskaya nauchno-tekhnicheskaya kohforent'sik' ~kl ol~oiov6j~-
0 Lej LO-1 - -----
overkinostnyye i kontaktnyye yavleniya)i Tomsk .196' c'. PoyiirkhnostnyY
nikov (p i
ontaktnyye yavleniya v poluprovodnikakh (Surface and conta# phexic~iena in iebii~ 1
conductors). Tomsk, Izd-vo Tomskogo univ., 1964 131-138'
:TOPIC TAGS: germanium semiconductor, telluride, selepide~ ~#orgdnic~:Okidel
.glass,
sulfide, protective coating, glass coatin
ABSTRACT, The authbrs studied the use of low7Melting chalk! ;4.ni6~ iii"ses. 6.fi 1
em induct -v
various compositions and systems for protecting standard 0 s or di 14s,
Pq , I
of Soviet manufacture. Some of the electrophysic6i Dro'[)ert $ of Itliese: glas !Swi_
rooti tem -LCfj. n t e;
were studied. The resistivity of these.glasses,at P'latu e 11 7es w
to 1016
range from 1013 0-cm dependi.ng*on the. glass composii. on. iie:resiatlv~ ty...
drops sharply.with an increase in te erature being reducied 11
MP 4 orders af: 46 gnj
-.tude at 120-1800C. There are two methods for applying glass, 1~s ~le
I'Oa~. n tl $em].
Card 1/2;
44~

........ . .

L 64Z93-65

-ACCESSION HR: AT5020458 7-
conductor devices: a) imme rsion of th 'semico du r

e n cto devicbAn 04 "glass mw
At;

vaporization of a glass. od
film in vacuum, Experiments - with 11fhe Iltmersion mq~h
showed a reduction or no ch ange-,in the reverse current, . with 1 ~good ~ il~ ~e r~roof 14 4~a
lities.. This method -is not 'applicable to gemaniu':sem
m ce sl~'6-_ twe
melting point of the glass is considerably higher than .-that 6f thii * ~t~rial fot~ tWB
rectifying contact. Therefore the method. j;1a
of recioitatlon~ sq...yapors q
'

~vacuum was used for these devices. Glasses~contairiing selen!,46 w~li~
-~the beats T_n,
,;
maV bo poa6 1e !toi
qualityand had the best adhesion properties. icreate

coating with.a coefficient- _~fo tht f th6 ~~4mic~
of expansion close at o ju6t6r e F.

g anium to the.glass composition. Th sl'oo'ulld ellm~l
ad44 - erm niple *6 ma stm; tos

anges'in
caused by rapid ch erature.daring coa hg P the: M iceii
temp ti 0 Xg 4
_figures,.1 table,
has: 5

ASSOCIATION.f. none

r.D:'::- 060ct6
SUBNIT1 ENCL., 00; E.
tJ. SMI COD
'
No ptr sovef:-~,
004:
NEM,~,007 ~~l

2

L OU88-66 _'g ril (m) /&,1P (t) /DIP (b) IJP(c) J DIG S
.ACCESSION NR: AT5020459 UR/0000/64/000/o06j6lW.O
'AUTHOR: Gaman, V. I. (Docent); Kalygina, V.
M
iTITLE: R axation of reverse currents in &~rmanium and silicon _n junctions
SOURCE41~ezhvuzovskaya nauchno-tekhnicheskKaya konlerentsiya Izike polMLrovod-
(poverkbnostriyyp i_ko-n_t_ak_tqjye yavlenlya), Tomsk, 1962-
:I