SCIENTIFIC ABSTRACT GRINBERG, A.A. - GRINBERG, A.A.
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CIA-RDP86-00513R000516830003-5
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RIF
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S
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100
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January 3, 2017
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3
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Publication Date:
December 31, 1967
Content Type:
SCIENTIFIC ABSTRACT
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SOIV/106-13-2-0/1~-,-~/~
AIUTHORs Grinberg, A. A.
TITLEt On the Theory of the Irmaftir .. Characteristic of a Trjcjde,.~-
Transistof , " (K teorii perekhodnoy kharakteristiki polupro-
vodnikovogo trioda)
PERIODICALt Radiotekhnikap 1958, Vol- 13, Nr 20 PP- 51 - 53 (USSR)
Receiveds April 25, 1958
ABSTRACTs Here the %tromftr i characteristict; of a trioft traIjIst6r:
under current control and with different wiring schemes are
obtained. The analytical form of the trwWfOir-i characteristic
gives the possibility to consider the collector capacity and
the load resistance of the triode. At first the transition cha-
racteristic of a triode in a scheme with a grounded and our-
rent-controlled basis is investigated. Laplace's representation
of the current ',tromfek - i characteristic g(t) . . . equation (1
obtained in Reference 1 is put down# which corresponds to the
deltaform [S(t) emitter current. The consideration of the
collector capacily C c and the finite load resistance Rload
Card 1/2 with the help of the equivalent scheme with small signals for
SOV/103-13-2-8/1.91-If-I -
On the Theory of the ?zWi6ftr . Characteristics of a Tridde Tzwsisior ~.' "
the collector circuit leads to equation (7), By z-pplication of
the multiplication theorem of operation calculus the UNts".
f6r, characteristic G(t) of the triode ... equation (6),
which takes the influence of the collector capacity and of I~hc
load resistance into considerationt is obtained. G(t) is t.
exact solution of the problem investigated by A. V. Ayrape.-
ymaAs and S. M, Ryvkin (Reference 5). There are 5 references,
5 of which are Soviet.
SUBMITTEN March 25P 1957
Card 2/2
GRMM, A.A.
Oalculation of transients In semiconductor triodes. Fixetverstela
1 no.1:31-43 Ja 059* WRA 12:4)
(Transistors) (Transients (219otrialty))
C
_~ '/' -/ 0 67390
240)) e4(,6,Y SOV/181-1-9-6/31
AUTHORSs Ryvkin, S, M., Ivanov. Yu. ~L. , Grinber,,z, A. A ~, Novlkov,
Potekhina, N. D.
TITLE; A New Longitudinal RgEnetcqtriction-Lffect,and -Itz .,pplic-
ation to the Determination of the Ratio Between the Con-
centrations of Heavy and Light Holes
PERIODICALt Fizika tverdogo tela, 1959, Vol 1, Nr 9, PP 1572 - 1575 ("r'SR)
ABSTRACT: When investigating the diffusion of the nonequilibrium carrier
in the magnetic field, the appearance of electrical fields is
usually studied (e.g. the photomagnetic Kikoin-Noskov effect).
The present paper offers the results obtained from nn investig-
ation of the concentration distribution of the minority carrier
in the magnetic field, and in particular, the results of an
investigation of the longitudinal magnetostriction effect in
the longitudinal magnetic field. A plane-parallel nemicon-
duotor plate was arranged perpendicularly to a homogenous
magnetic field. On the plate, a point light probe exactly
faced a point collector. The infected nonequilibrium carriern
diffused through the plate and the collector determined the
Card 1/5 concentration of the minority carrier. The concentration
.' I--
67390
A New-Longitudinal Magnetostriction Effe%.t and Its* SOVI/181-1-9-8/31
Application to the,Determination of the Ratio Between the Concentrations of
Heavy and Light Holes At
recorded thereby increased with R. Figure 1 shows a schematic
reprei6ptation of the measuring arrangement, a'description of
which is given. Theoretically, one obtains for the concentration
of thi injected carrier on the z-axis
_*. 1 0_511D
.(H11z).-A n (r is the electron-hole pair
H -.21D z I where i
production rate,*1 D the diffusion length, D n the electron
diffusion coefficient. Figure 2 shows the result obtained by
an attempt of experimentally verifying this formula for
electron injection into hole-type germanium. The beat agree-
ment in obtained with a microscopic drift mobility of the
electrons Mo , 3650 cm 2/vesed. When investigating the hole
/ n
diffusion in n-type ermanium) a considerable divergence
between theory and exper4ment is observed, which, however,
Card 2/3 can be explained when taking into aebount the existence of
67390
A Now Longitudinal Magnetostriotion Effect and Its SOV/181-1-9-8/31
Application to the Determination of the Ratio Between the Concentrations
of Heavy and Light Holes
heavy and light holes. The theoretical curve drawn for 4%is
case nicely describes the experimental results. The ron-
centration ratio between heavy and light holes is dsduced
from measuring results as being 57; this value approaches
the result (50-0) obtained by an other way (Ref 1). Therp
are 2 figures and 2 references.
SUBUITTEDi March 7, 1959
Card 3/3
S/181/60/002/01/29/035
.2 B008/BO14
AUTHORs Grinberg, A. A. Vk
TITLEt Theory of the Aniaotropic Photomagnetic Effec in Germanium
PERIODICAM Fizika tverdogo tela, 1960, Vol. 2, No. 1, pp. 153-156
TEXTs The article under review deals with the photomagnetic effect dis-
covered and studied by I. K. Kikoin and Yu. A. Bykovskiy (Refs. 1-3). In
contrast to the ordinary photomagnetic effect, the sign of this effect
does not change with changing direction of the magnetic field. It is
described as follows: An electric field is generated in an illuminated
sample located in a magnetic field that forms a certain angle cc with the
illuminated surface. This field is generated not only in the directicn
co rres onding to the ordinary photomagnetic effect (according to Kikoin
Noskov5 but also in a direction perpendicular to the former. Studies of
the even (quadratic) effect on germanium have shown (Ref. 3) that the
formula holding for the ordinary photomagnetic effect is not applicable
to anisotropic samples. Here, the effect is non-zero even at oc - 0.
Card 1/3
Theory of the Anisotropic Photomagnetic S/161/60/002/01/29/035
Effect in Germanium BOOB/BO14
The author suggests another mechanism for the development of this effect.
It is related to the anisotropic nature of the conductivity of the sample,
which arises in consequence of the magnetic field. When the sample is
illuminated in the presence of a magnetic field, the direction of the
ambipolar current flux of the p-n pairs deviates from the direction of
the arising concentration gradient. This is ascribed to the anisotropic
nature of conductivity. For this reason, there is a non-zero component
of the ambipolar flux In the direction of the magnetic field, though the
magnetic field lies in a plane with the illuminated surface of the
sample. This component is not caused by the "repeated" deviation but by
the effect of the change in resistivity within the magnetic field. The
authors believe that this mechanism offers an explanation of the even
anisotropic photomagnetic effect observed by Kikoin and Bykovskiy in
n-type germanium. The illuminated surface of the latter coincides with
the (111) plane. The calculation of this effect is -iven. The author
thanks S. M. Ryvkin and S. R. Novikov for their discussion of the
article under review. There are 1 figure and 7 references, 5 of which
are Soviet.
Card 2/3
Theory of the Anisotropic Photomagnetic Effect S/18 60/002/01/29/035
in Germanium B006XB014
ASSOCIATIONt Leningradskiy fiziko-tekhnicheakiy inatitut AN SSSR
,(Leningrad Institute of Physics and Technology of the
SUBMITTED: May 26, 1959
q/
Card 3/3
S/181/60/002/05/09/041
B008/B058
AUTHOR: GrinbeaL_L A.
TITLE: Photomagnetio Effect in Isotropic Semiconductors and Its
Application for the Measurement of the Lifetime of Minority
Carriers..0
PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 5, pp. 836-847
TEXT: An equation for the current, with regard to two types of carrier
with equal signs (holes), is derived from the kinetic equation-with ar-
bitrary dependence of the relaxation time on the energy. The photocurrent
and the photomagnetio emf are determined for arbitrary magnetic fields by
means of this equation within the range of the application of the solution
of the classical equation of motion. The photomagnetic method of measuring
the lifetime is investigated next, and equations for the determination of
the lifetime on transitions to strong fields are derived* Moreover, a sur-
vey on studies carried out in this field is given in the paper, and the
following persons are mentioned: B. Ya. Moyzhes, Yu. N. Obraztsov,
I. K. Kikoing Yu. A. Dykovskiy, A. G. Mironov, K. B. Tolpygo, G. Ye. Pikus,
and A. I. Aneellm. Fig. I showe the experimental setup for the measuring of
Card 1/2
tA
Photomagnetio Effect In Isotropic Semiconductors S/161/60/002/05/09/041
and Its Application for the Measurement of the BOOO/BO58
Lifetime of Minority Carriers
thq,photomamnotoolootrio effect (Kikoin-Noskov effect). Fig.2 shows the
difference between the regular actual lifetime and that computed from for--
mula (31) for various magnetic field strengths. The magnetic field extends
along the Z-axis, and the exposed surface coincides with the area (Xz).
The exposure is accomplished with light with a depth of penetration much
smaller than the diffusion length of the disequilibrated carrier. Presuming
that the sample be long as compared to its thickness, and that E y does
therefore not depend on x, it is found, according to the potential of the
electric field, that E.xdoes not depend on y. The author finally expresses
hie gratitude to S. M. Ryvkin, Doctor of Physical and Mathematical Scienceo.
There are 2 figures and 35 references: 16 Soviet and 19 English.
ASSOCIATION: Fiziko-tekhnicheskiy institut AN SSSR, Leningrad
(Institute of Physics and Tec-hnolo'gy AS USSR Leningrad
SUBMITTED: August 5, 1959
Card 2/2 ~/c
A; Ili--lc 6
5/181/60/002/007/001/042
B006/BO70
AUTHOR; Grinberg, A. A.
TITLE: A Theory of the Photomagnetic Effect in Anisotropic Cubic
Crystals
PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 7, pp. 1361-1367
TEXT: The purpose of this work was to develop a theory of the photo-
magnetic affect of anisotropic cubic crystals in weak magnetic fields
for an arbitrary orientation of the crystal. The first theory of this
effect, a macroscopic theory, is by Yu. M. Kagan and Ya. A. Smorodinskiy
(Ref. 14)- It obtains the angular dependence of the anisotropic photo-
magnetic effect (the so-called Kikoin-Bykovskiy effect) in an
approximately correct form. For the determination of the magnitude of the
effect, it uses a phenomenological coefficient, whi-h, however, can be
calculated on the basis of the microscopic theory developed in the present
wcrk. First of all, equations are set up which determine the electric
fields that appear on irradiating a plane-parallel plate of a semi-
Card 1/3
A Theory of the Photomagnetic Effect in S/181/60/002/007/001/042
Anisotrople Cubic Crystals B006/BO70
conductor placed in a magnetic field. The geometric relations of the
experiments are shown in Fig. 1. These equation3 are then solved on the
supposition that the dimensions of the sample are large compared to the
diffusion length of the minority carriers (holes). Explicit expressions
are given for the components of the electric field and the concentration
of the minority carriers. These are valid for an arbitrary orientation
of the crystal to the magnetic field. These re3ults are then applied to
some special cases. One application is made to the irradiation of the
(111) plane; Fig. 2 shows the dependence of the field component E2 on the
angle a0 obtained rrom formula (23), and the experimental angular
dependence according to Rer. 3, the angle ao giving the direction of the
magnetic field relative to the sample. Fig. 3 shows E2 as funotion of
Y for a0 - 450 and H . 24vOOO oersteds, q characterizing the directions
of the coordinate axes with respeot to the (111] direction. The experi-
mental angular dependence (Fig. 3a) is again compared with the
theoretical value (Fig. 5b). The other application of the theory is made
to the case of the irradiation of the (110) plane, that is,Gx5 lies in
the LIIO direction. Fig. 4 shows E2(T) at ao , 450. The theory of
Card 215
A Theory of the Photomagnetic Effect in S/181/60/002/007/001/042
Anisotropic Cubic Crystals B006/BO7O
anisotropy of the photomagnetio effect developed here is in good
agreement with the experimental results. There are 4 figures and 14
references: 11 Soviet and 3 US.
ASSOCIATION:
Fiziko-tekhnicheakiy Institut AN SSSR Leningrad
(Institute of Physics and Technology of the AS USSR?
Leningrad)
SUBMITTED:
Card 313
December 21, 1959
825h4
S/181/60/002/007/024/042
00 B006/BO6O
AUTHORS: Grinberg, A. Strokan, N. B.
TITLE: Influence of the Rate of SurfacXecombination and of the
Absorption Coefficient on the T ansient Responses of Photo-
diodee
PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 7, PP-1536-1541
TEXT: Photodiodei5are to this day known as the Sa~te~rs&f light signals
or radiation pulses to electrio pulses with the least inertia; the study
of the influence of various parameters on their inertia has a great practi..
oal importance. The present paper is a contribution to this problem. The
authors obtained, theoretically, an expression for the transient response
of a photodiode for arbitrary values of the surface recombination rate S
and of the absorption coefficient k; the importance of considering finite
S_ and k values Is discussed in the introduction. As the initial step for
the formulation of the problem (which is treated as a one-dimensional one),
the authors used a schematic representation of a photodiode as is shown by
Fig. 1. With large k values, e.g., in the conversitn of a step pulse
Card 1/3
825bb
Influence of the Rate of Surface Recombination B/181/60/002/007/024/042
and of the Absorption Coefficient on the Transient B006/BO60
Responses of Photodiodes
(.-r- pulse) by a photodiode, distortions of two types occur: the pulse
experiences a shift with time and a modification of the form. 9, (delay
time) denotes the time from the beginning of excitation to the moment at
which the current has attained 0.1 of Its stationary value 1 11 t; 02denotes
the duration of the current growth in the interval I Jo'll 0-71 . The
authors wanted to determine YkOS) and g2 (k,S), and to find Ij-(t) for a
.I- -excitation pulse. First, the transient response is found for a 6 pulse,
by which it is possible to determine I(t) by means of Duhamel's formula
for various exciting pulse shapes. Formulas (5) and (9) are obtained for
I,(t) and by means of them for some special cases the transient responses
are calculated for 3.0 and shown In Fig. 2. I_r(t) is given by formula (10).
By means of these formulas, 0 land 0 2 can be determined as functions of
kv; Figs. 3 and 4 show these for various 3 values. (w characterizes the
distance between the irradiated diode surface and p-n junction, cf. Fig.1).
9, shows the largest change in the transition range of uniform generation
Card 2/3
Influence of the Rate of Surface Recombination
and of the Absorption Coefficient on the
Transient Responses of Photodiodes
825hit
S/181~60/002/007/024/042
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