SCIENTIFIC ABSTRACT TOLPYGO, K.B. - TOLPYGO, O.B.

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• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001756120003-6
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: July 16, 2001
• Sequence Number: 3
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

Wave Function and Energy of the Band Electron S/-,e-.j6O/OO21O1,71
in NaCl. 11 B006/BO63
British.
ASSOCIATION- Kafedra teoreticheskoy fiziki K4.yevskogo ordena Lenina
gosudarstvennogo universiteta im. T. G. Shevchenko
(Department of Theoretical Physics, Kiyev "Order of Lenin"
State University imeni T. G. Shevchenko)
SUBMITTED: May 12, 1960
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.9- 1A 0 0
AUTHORS: Gorkun, Yu. Tollygo, K. B.
TITLE; Peculiarities of the Motion of Past Carrierstin Polar
Crystals
PERIODICAL: Izvestiya AkiLdemii nauk SSSR. Seriya fizicheskayaq 19609
Vol*. 241 No- 1v PP- 94-100
TEXT: The.article under review was read at the Second All-Union Con-
ference on the Physics of Dielectrics (Moscow, November 20-27, 1958).
Estimations of mobility and carrier concentration on the basis of the
results obtained by S. I. Pekar et al. led to the conclusion that the
majority carriers of ion crystals are polarons.'~First, the difficulties
are discussed which are encountered in astab-lishing a theory of the
effects of polarons. Por the development of a*consistent theory it is
necessary to have a knowledge of the properties of polaronB at high
velocitioa and of the motion of polarons. These may be studied by means
of a method devised by Bogolyubov and Tyablikov. However, this method
contains improper integrals, and in zeroth approximation it correspond"
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Peculiarities of the Motion of Fast Carriers in S/048/60/024/01/07/009
Polar Crystals B006/BO14
to the semiclassical theory of polarons in which the motion of electrons
is described in a quantum-mechanical manner, the motion of lattice ions,
however, in a classical way. A study of fast polarons makes it necessary
to take account of the anharmonic nature of lattice vibrations. Thus, the
authors proceeded from Tolpygots theory (Ref. 3), which describes the
dynamics of a crystal lattice consisting of deformed ions. Consideration
of the anharmonic nature leads to the occurrence of an additional
imaginary term in the resonance denominator iof the amplitudes of forced
ion oscillations, whereby improper integrals are excluded, It is assumed
that the polaron radius is large compared to the lattice con8tant, that
it is possible to calculate in adiabatic approximationg and that the
wave function which describes the fluctuation of the electron in t~e
polarization potential well whose center moves with the velocity v, may
be represented by the following Schroedinger equation t
r_ _L2 A + Ur
L 2m* r) _ Wo 0. U('r) is given by formula (2). This
equation is solved by a variational method using the Ti,2 ansatzes which
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are given by (3) and (4). Formula (6) describee the energy lost by a
polaron per unit time. Next, some further expressions gre derived for
different energies, and the course of the functions is diagrammatically
shown. The results obtained for the wave function were used to study the
dependence of the potential electron energy on the distance along the
field direction. Fig. 5 indicates that in,the case of uniform 14otion of
a polaron in the -field a'distortion of the potential well does not lead
to a "fallout" of the discrete electron level from the well.. V. M.
Buymistrov is mentioned in this article. There are 5 figures, 2 tables,
and 11 references, 10 of which are Soviet.
ASSOCIATIONt Institut fiziki Akademii nauk USSR (physics Institute of
the Acade~my'of Sciences of the UkrSSR)
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TOLPYGOI K.B.
Long-range forces and equations of the dynamics of diamond-type
homeopolar crystals. Fiz. tver. tela 3 no, 3;943-956 Mr 161.
(MIRA 14:5)
1. Kafedra teoreticheskoy fiziki Kiyevskogo ordena Lenina
gosudarotvennogo universiteta,
(Crystal lattices)

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B111/B102
AUTHORS: Demidenko, Z. A., Kucher, T. I., and Tolpygo, K. B,
TITLEs Eigenfrequencies of lattice vibrations of germanium as
calculated in various approximations
PERIODICAL: Fizika tverdogo tela, v. 3, no. 8, 1961, 2482 - 2494
TEM A study is made of the natural.,vibrations of the germanium lattice,
taking account of the dipole momentsi of electron shells, that appear
with a displacement of nuclei. Expressions from Ref. 8(V. S. Mashkevich,
K. B. Tolpygo, ZhETF, 32, 520, 1957) and Ref. 12 (FTT, III, no. 3, 1961)
are used for the potential energy U of the crystal. Taking account of
either short-range forces (zeroth approximation) or the sole linear terms
in dipole exchange interaction (first approximation) is insufficient.
Calculations are performed in various types of first and second approxima-
tions. Experimental data, however, do not allow to prefer one of these
variants. It is stated that the third approximation (i. e., taking also
nonelectric interactions into account fits reality better than the model
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W. Co bran. The present paper is based upon results of Ref. 12 (K. B.
Tolpy.o, FTT, III, no. 3, 1961), and its aim is to explain the nature of
intercLtomic forces, and, by comparison between theory and experiments, to
calculate all parameters. The natural vibrations of a diamond-type lattice
are calculated in various approximations in the first part of the present
paper, and formulas are derived for the moduli of elasticity and for the
limiting frequencies of optical vibrations. A comparison of results with
data nbtained from the Raman effect shows that the first approximation is
not oufficient to describe the vibrational spectrum in the case of large
dipole moments. The matrices of the inner field and the eigenfrequencies
are calculated in first approximation in the second part of the paper. By
takiog account of a possible nonelectric interaction, an attempt is made to
improvq results of earlier investigations (UFZh 1, 226, 1956; ZhETF, 32,
498, 10,57; FTT, 11, 2655, 196o). A critical study showed that the dipole
moments are not small, and that the electron-shell deformation and the
interatomic electrostatic forces play an essential part in lattice dynamics.
In the third part, the parameters of the equations describing harmonic
lattice vibrations are determined, and eigenfrequencies are calculated in
second approximation. There are 2 figures, 5 tables, 6 Soviet-bloc and
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Eigenfrequencies of lattice ... B1 11 X3102
12 non-Soviet-bloc references. The''most important reference to English-
language publications reads as follows% W. Cochran, Phys. Rev. Lett.,.Z,
495, 1955; Proc. Roy. Soc., A M, 260, 1959)
ASSOCIATIONt Inatitut poluprovodnikov AN USSR, Kiyev (Institute of Semi-
conductors AS UkrSSR, 4iyev).
SUBMITTEDs December 22, 1960 (initially)
April 24,.1961 (after revision)
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00 (IVY3, // 3 7, 4/0 B102/B108
AUTHORS: Gorkun, Yu. I., and Tolpygo# K. B.
TITLE: Theory of transfer effects in p-type Ge-like semiconductors
PERIODICAL: Fizika tverdogo tela, v. 3, no. 10, 1961, 2903-2912
TEXT: The general mathematical procedure (Ref. 7: K. B. Tolpygo. Tr.
IFAN USSR9 vYP- 39 52f 1952) to render galvanoelectrio, thermoelectric,
and magnetic effects as functions of the E and IT fields of the temperature
gradients, and of the carrier concentrations is applied to the Hall effects
and the magnetic resistivity of p-type semiconductors. The set of kinetic
equations is solved for semiconductors with spherical bands that are in
contact at k-0 (such as p-type Ge, but without taking band corrugation
into aocount) Ge ral expressions are derived for the current density T
and the heat LOW Tfrom ihiah the role of band-to-band transitions under
the action of a magnetic field may be estimated. Part of the fundamental
relations are taken from Ref. 7j, The consistent set of Boltzmann equations
which are represented a s +a Ex, ) -b a is solved for light
Za a 'lot ~p
and heavy holes. H. Ehrenreich and A. Overhaueer (Phys. Rev. 104, 649,1950
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have solved this set for H .0. Here, it is treated for H ~O and (X,p -1,2.
For the' current dens ity T thp-9i4culat ions re.- glygn _ in _ detail
J=J.-4-j,,-i-j,,=a,,E-4-REXH-i-MHX(HXE)-+-
q (DvN- DjpvPj - D2,VP3) (R.vN- R,,,vP, - RtjvPl)X R-f-
-i---~r-HX[HX(M.,vN-MlvP,-MevP,)]-UV]nT-
q
-,...---jvsv.1-n.TxH-U,,Hx(HxvInT), (27)
with
r-A"
47c j
KP pip ky
kT
Da= Pat Dip =.ET Pipt Dip AT Pip*
q q q
q2
4-n q2 R, LM), R,, =.Lt. (LV)
Rme TF Kr)I p 3 kT 3 S-FT-
92
4" S! KM m1p 4n 91
M11= 3 kT 5 3 k-T 3 kT a
do = q (p.N-1-- PIpP, -I- NpPib A=R.N-i-Rj,.Pj-i-RvpPj,
M=M.N-4-MjpPj-'-MspP,,
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JV_(jJ(4)_j'1j
IT - D 4) -
'U' q KO) - m' K(G)) 'r 2
3 2 r 2hT r 2 r (28)
2$~
(O)Jpj~._ TJ(4) 1) -4- 3 L(4)
L LOP ) P.
1 - -a
r-O 2W J-& 2 r4-1 !kt r+1
is obtained. For the heat flow, procedure and results are analogous. Hall
effect and resistivity change in a homogeneous semiconductor in a ma6netic
field are considered as examples to !demonstrate the application of the
general formula which holds for any If and may be applied to any transfer
process. In order to simplify calculations it is assumed that VT - 0 and
that effects of concentration changes are negligible. Also the special
case of the Hall effect in a weak magnetic field and a thin specimen is
treated under the assumption that the hole concentration deviates from its
equilibrium value. There are 0 references: 4 Soviet and 4 non-Soviet.
The four references to English-language publications read as follows:
R. K. Willardson et al. Phys. Rev., 9-6, 1512, 1954; J. N. Zemel a.
R. L. Petritz. Phys. Rev., 110, 1263, 1958; H. Ehrenreich a. A. Overhauser.
Phys. Rev., 10A, 331, 1956; 11. Ehrenreich a. A. Overhauser. Phys. Rev.
1049 6491 1956.
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ASSOCIATIO14: Institut poluprovodnikov AN USSR Kiyev (Institute of
Semiconductors AS UkrSSR, Kiyev)
SUBMITTED: Uarch 11 , 1961
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B1251BI04
AUTHORSt Demidenko, Z. A., and Tolpygo, K. B.
TITLE.: Normal vibrations of alkali-halide crystals with ions of
very different dimensions
PERIODICAL: Fizika tverdogo tela, v- 31 no. 11, 1961, 3435-3444
TEXT: Equations for the vibrations of lattices with anions and
cations of very different dimensions (e.g., NaI) have to be modified by
allowing for the repulsion of I ions and by introducing a fractional
..,charge. Thus, agreement between theory and experiment can be improved.
The vibrations of binary crystals are described by the system
(Ae.,P,,y-+- BsecyPej), (1) and
ey
0=
Ad
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;j

Normal vibrations of alkali- B125/B104
X (G cos k, 2H(cos k,, cos k, 2 cos k,)],
ggo0j,28 - 8818e2tsy X (2)
ZY
X [geosk.-i-2h(cosk,-cosk,-2cosk.)],
C'e.'
M. -I- Me
e2. M"
for the Fourier coefficients and p1 of displacements and electron
PS s s a
shells, respectively. here, A8 = dimensionless polarization, a - distance
between neighboring Na 4 and-I-ions, cy,s,xy = electric field in the a1th
11 A 11.
site, which is induced by the system of dipoles P., = P,,e st 6.nd
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~ I
Normal vibrations of alkali- B41~5 B104
depends on the wave vector e. TLe -arame.~:-_= P, j. H, and h define the
Ivelastic forces" acting between zhe nearesi neighbols PlIP2 G,H) and
-4 > (91h) for longitudinal (G,g) and trans%rerst_- (H,h) displacements of the
P12P2 _?
quantities P4,) p21 P2' Since C 12 . C44 " the ri~iaticns C44 = C12
(e 2/a4) (0 - 34778 + F + 2 'E~) , Cl 1 = (e 2 0 j
s S/a4\ ~,1/2)G - 0.69544 + 2P - 2
(4) are valid for the temperature applied her,-. The matrix elements
appearing in (2) have to be supplemented b:r additiGrial terms given by
the authors. After elimination of the mcm-"nts from the second
group of (1) the equation for the lattice vibratirns read
2 /W __9 2,)
9 .2 psx Asstxypsly (7), from which :~7 Q. . U 0 follows
a .- I j
Sly i
after diagonalization of each square. The ext;eni-~,ie expressions for Qij
and ~J, appearing in the latter relation, arf) expli-:.-itly written. For
the acoustic and optical branches ono one ~iqenfreqlloncy each.
All coefficients D ij of the transformed matrix C-I are explicitly given in
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7~ 75 10.4
Normal vibrations of alkali- ... ; X It
an appendix. The eigenfrequencies of the IIaI crystal are calculated for
three approxima:tions: 1) Short-range forcas acT, onlf between the nearest
Na+ and I- J-5ons; 2) allowance is made f~:r -,he acting between the
individual I- ions; 3) in addition, the d._ffi-.rer.,:e between the ionic
charge and e is taken into account. There are I fi 'gure, 2 tables, and
16 references: 13 Soviet and 3 non-Soviet. The three references to
English-language publications read as A, D. B. Woods, W.
Cochran, B. N. Brockhase. Phys. Rev., 119, ~'!60, 19 '0. B. J. Dick,
A. W. Overhauser. Phys. Rev., 112, 90, 1958; 71. ";c-.hran. Proc. Roy. Soc.,
A251, 2 6 0, 19 5 9.
ASSOCIATION: Institut poluprovodnikov AILI, USSR Ki_-i~-,v (Inatitute of
Semiconductors AS UkrSSR,
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ITOLPYGOI X.B. (Tolpyho, K.B.1; GORKUNv Yu.1. (Horkung IU.%,.]
I,-
Symposium on semiconductors. Ulw, fiz. zhur. 6 no.5,.717 S-O
(MIPI 14 -11 )
(Semiconductars-Congresses)

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B117/B212
AUTHORS: Rashba, E. I., Tolpygo, K. B.
TITLEt Fourth Conference on the Theory of Semiconductors
PERIODICAL: Uspekhi fizicheskikh nauk, V. 74, no. ij 1961, 10-175
TEXT: This is a report on the IV Vsesoyuznoye soveshchaniye po teorii
poluprovodnikov (4th All-Union Conference on the Theory of Semiconductors)
which took place from October 17-22, 1960. This conference had been convened
by the komissiya po poluprovodnikam AN SSSR (Comission of Semiconductors AS
USSR) in cooperation with the AN Gruz. 5SR(ASGruzinskaya SSR) and Tbilisskiy
gosuniversitet im. Stalina (Tbilisi State University imeni Stalin). Over 250
experts and representatives of Soviet 25 cities took part. Over 80 lectures
were given and discussed during the-general meetings, the section meetings,
and the seminars. The chairman of the organizing committee, S. I. Pekar
dedicated his address in memory of the late Academian Abram Fedorovich loffe.
E. L. Andronikashvili, Academian of the AS Gruzinskaya SSR, described the role
of A. F. Ioffe, which he had played in creating a large number of Institutes
of Physics and Institutes of Physics and Technology in many cities of the
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USSR and also his role in the education of young scientists. K. B. Tolpygo,
A. I. Gubanov, G. G. Taluts, V. A. Myamlin, reported on interesting papers of
foreign participants read at the International Conference on Semiconductor
Physics. This conference took place in Prague from August 28 to September 2,
1960 and about 600 persons from 24 countries took part in it. Most of the pa-
pers submitted for discussion dealt with the investigations of optical proDer-
t;en of semiconductors: S. 1. Pekar, M. S. Brodin, B. Ye. Tsekava "Optical
anisotropy of cubic crystals, additional light waves in crystals, and their
experimental ilentification." R. F. Kazarinov, 0. V. Konstantinov: "Doppler
shift of absorption lines of excitons," Ye. F* Gross, B. P. Zakharchenya,
0. V. Konstantinov: "Inversion effect of a magnetic field in the absorption
spectrum of excitons of the US crystals." A. A. Demidenko: "Micro-theory
of the Frenkellexciton with and without taking into account the delay in
cubic crystals." V. S. Mashkevich: "Electromagnetic waves in a medium hav-
ing a continuous energy spectrum (taking into account spatial dispersion)."
V. L. Strizhevskiy: "Analysis of various properties of dispersion and ab-
sorption of light by an exciton in crystals." V. T. Cherepanov and V. S.
Galishev: "Anisotropy of quadrupole-type absorption of light by an exciton
in cubic crystals." Ye. F. Gross, A. G. Zhilich, B. P. Zakharchenya, A. A.
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Kaplyanskiys "Effect of a magnetic field and a crystal deformation on the
exciton ground state of Cu20.11 S. A. Moskalenkos "The energy spectrum of
excitons in non-deformable ion crystals." V. M. Agrynovich: "Theory of
excitons in molecule crystals." I. G. Zaslavskaya: "Calculation of the
energy of excited exciton states during an intermediate binding." S. V.
Vonsovskiy, P.sS. Zyryanov, A. 11. Petrov, G. G. Taluts: "The effect of elec-
tric and magnetic fields on the form of exciton absorption lines." L. E.
Gurevich, I. P. Ipatova: "Theory of long-wave absorption of light by crys-
tals." V. M. Agranovich and V. L. Ginzburg: "Dispersion of X-rays in crys-
tals by forming excitons.11 L. N. Ovander: "Raman effect in crystals.."
E. I. Adirovich: "The Exciton as a wave for phase transformation." Z. S.
Kachlishvili: "Elastic scattering of a non-localized exciton on impurity
centers." A. S. Selivanenko: "Calculation of the dispersion cross section
of free excitons at lattice defects of a molecule crystal." A. A. Voroblyevs
"Self-absorptiori and additional absorption in ion crystals and the energy of
the lattice." V. M Agranovich, E. I. Rashba, I. B. Levinson,. I. M. Lifshits,
M. r. Kaganov, V. I. Perell, A. G. Zhilich, S. I. Pekar, S. A. Moskalenko,
L. 11. Demidenko, V. L.Bonch-Bruyuvien wwk part in the discussion. The
following references were quoted: Ref.2: Ye. F. Gross, A. A Kaplyanskiy,
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Fizika tverdogo tela 2, 379 (1960); Ref-3: I. S. Gorban', V. B.. T-imofeyev,.
Doklad na XIII Vsesoyuznom soveshchanii po spektroskopii, Leningrad, iyull
1960 g.; Ref.6: V. M. Buymistrov, S.'I. Pekar, ZhETF L2, 1193 (1957);
V. M. Buymistrov, Ukr4 fiz. zh. J, Pril. 1. 21 (1956). The following papers
dealt wi.th the analysis of the band structure of semiconductors: 0. V.
Kovalev:"'Degeneracy of electron energy levels in a crystal." T. I. Kucher:
"Hole.7bandd in alkalimetal chlorides." F. M. Gashimzade., V. Ye. Khartsiyev:
IIAnalysis of the energy structure of several semiconductors." Ye. I.
Cheglokov, V.-A4 Chaldyshev: "Symmetry of the solutions for Hartree-Fock
equations for.crystals.11 A. Ye. Glauberman, A. M. Muzychuk., M. A. Ruvinskiy,
1. V. Stasyuk:. "Problems of the multiple-electron theory for solid and
liquid semiconductors." A. I. Gubanov, I'Various.theories of amorphous semi-
conductors." L. D. Dudkin: "Problems of the chemical bonding of semicondue-
tox~ compounds of transition metals." A. D. Chevychelov: "Energy spectrum
of the elctron for a polymer-chain model." The following persons took part
in the discussions: I. B. Levinson, K. B. Tolpygo, N. N. Kristoffell,
P. N. Nikiforov, E. I. Rashba, S. I. Pekar, A. Ye. Glauberman, E. L.
Nagayev, V. M. Agranovich.,The following papers dealt with transfer proper-
ties: G. Ye. Pikus, G. L. Birg E. S. Normantast "Theory of the deformation
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potential and the dispersion of carriers in semiconductors showing a degen-
erate band." Ye. P. Pokatilov; "Interaction of free electrons with ultra-
sonics in silicon and germaniun." V. L. Gurevich, Yu. A. Firsov: "Theory
of the electrical conductivity )f semiconductors in a magnetic field on in-
elastic scattering." A. I. Ansellm, B. M. Askerov- "Thermomagnetic phenom-
ena in metalloids exposed to a strong magnetic field." L. E. Gurevich, G.M.
Nedlin: "Contribution of electrons to thermal conductivity due to entraine-
ment of phonons.11 I. Ya. Korenblit: "Galvanomagnetic phenomena in Bi2 *re 3'f(
P. G. Baksht: "Faraday effect at free carriers in Bi 2Te3 exposed to a weak
magnetic field." G. I. Kharus, I. M. Tsidillkovskiy- "Anisotropy of photo-
magnetic effects in cubic crystals." N. P. Keklidze: "Several electrophysi-
cal properties of germanium and silicon at low temperatures." V. B. Piks:
"Entrainement of ions by electrons in semiconductors." I. M. Dykman, P. Y~
Tomchuk- "Electrical conductivity and thermionic emission in semiconductors.,
P. M. Tomchuki "Variational method for determining the electrical conductiv-
ity and taking into account also the Coulomb interaction of carriers." Sh.
M. Kogan, V. B. Sandomirskiy: "Theory of the external emission of hot elec-
trons from semiconductors." V. A. Chuyenkov- "Conductivity of germanium in
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in strong electric fields at low temperatures." V. P. Shabanskiy: "Non-
equilibrium processes in impurity semiconductors." 0. N. Krokhin, Yu. M.
Popov; "Slowing-down time of non-equilibrium carriers in -iemiconductors.11
The following persons took part in the discussionst V. A. ("huyenkov, G. L.
Bir,*I. M. Lifshits, G. M. Nediin, 0. V. Konstantinov, M. 1. Kaganov, F. G.
Bass, V. L. Bonch-Bruyevich, I. M. Dykman, E. I. Rashba, Z. S. Gribnikov.
The following papers dealt with resonance and oscillation effects. I. M.
Lifshits, V. M. Nabutovskiy, A. A. Slutskint "Phenomena of the mobility of
charged quasi-particles near singular points of isoenergetic surfaces or or-
bits." M. Ya. izbell: "A new resonance effect" and "Quasi-classical quanti-
zation near particular classical orbits and quanta oscillations of thermody-
namic quantities." E. I. Rashba, I. I. Boyko, V. I. Sheka: "Cyclotron and
combined resonance and susceptibility of various semiconductors." V. L.
Gurevich, V. G. Skobov, Yu. A. Firsovt "Giant oscillations of sound absorp-
tion." M. F. Deygen, A. B. Roytsin: "Paramagnetic resonance with arbitrary
.sizes of a obatic magnetic field in electrons localized in semiconductors."
V. Ya. Zevin: "Theory of the spin-lattice relaxation of electron localiza-
tion centers in non-metallic crystals." Yu. V. Chkhartishvili: "Electron
spin resonance at the F-center in KCl+NaCl crystals." The following persons
took part in the discussions: V. L. Bonch-Bruyevich, I. M. Lifshits, K. B.
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Tolpygo, V. Ya. Zevin. The following papers were devoted to the theory of
local centers and polaronsi K. K. Rebane, 0. 1. Silld: "Method of momenta
in the theory of electron oscillation transitions." V. M. Buymistrovs I'Var-
iational principle for the transitions probability." S. V. Tyablikov, V.
A. Moskalenko: "Application of field-theoretical methods to the-theory of
multiple~phonon transitions." Yu. Ye. Perlin, A. Ye Marinchuk, V. A.
Kovarskiyt "Application of the perturbation theory of Wigner-WeiBkopf to the
problems of electron-phonon interaction in crystals." A. M. Ratner, G. Ye.
Zillbermant "Theory of luminescence of crystals having luminescent impurity
centers." A. A. Tsertsavadze: "The mechanism of light absorption by F-cen-
t6rs'and excitons in alkali-halide crystals." A. G. Chebans "Theory of
thermal ionization of FI-centers.!I D. 1. Abakarov, Yu. M. Seidov: "Theory
of the susceptibility of polaron gas." V. L. Vinetskiyi "The ground state
of the bipolaron.11 R. R. Dogonadze, A. A. Chernenko: "Electrical conduc-
tivity of semiconductors with a short length of path of the carriers." The
following persons participated in the discussionst K. K. Rebane, E. I.
Rashba, N. N. Kristoffell,,B. K. Tolpygo, M. I. Kaganov, S. 1. Pekar, Yu.
Ye. Perlin, A. M. Ratner, M. F. Deygen. Only a few papers dealt with the
theory of the crystal lattice: K. B. Tolpygo- "Far-reaching Coulomb forces
Card 7/9

S/053/61/074/001/003/003
Fourth Qonference on B117/B212
in the dynamics of homeopolar crystals of the diamond type." V. S. Oakotskjy,
A. L. Efros- "Theory of crystal lattices having a nonrcentral interatomic
interaction." B. Ya. Yurkov: "Theory of the annealing of radiative defects."
M. Ya. Dashevskiy, M. S. Mirganovskayat "The growth and structure of
A Sb*monocrystals.11 *Th6 following persons were mentioned: T. I. Kucher
and Z. A. Demidenko. The following papers were devoted to the phenomeno-
logical theory of semiconductors: I. A Mutrskhulava. "Analysis of local
trapping cefiteks by continuous exbitation of the.semiconductor with.light.11
E. I. Adirovich: "Kinetics of impurity photoconductivity and a new method
of determinirg the effective cross sections of local centers." Yu. V.'
Gulyayev: "Szatistics of electrons and holes in semiconductors showing dis-
locations." V. M. Fridkin: "Phenomenological theory of the photoelectret
state of crystals." G. M. Guro: "Energy structure of a surface layer formed
by space chhrg~s in semiconductors." Yu. I. Gorkun: "Effect of current e-
lectrodes'on*magnetic resibtance.11 Yu. A. Vdovin, B. M. Grafov, V. A.
Myamlin, V. G. Levich: "Properties of the two-phase boundary electrolyte
semiconductor." The theory of semiconducter devices was treated in the fol-
lowing papers: V. M. Valld-Perlov, A.'V. Krb~silov, M. Ye. Lisogorskiy and
V. L. Aronovi "Parametric diodes. Calculation of parameters." D. A. Aronov,
Card 8/9

5/05 61/074/001/003/003
Fourth Conference on ... B117YB212
P. B. Karageorgiy-Alkalayevi "A possibility to explain the inverse current
increase with increasing potential in a semiconductor diode." M. I .
Markovich, H. M. Royzin- 11 Effect of the geometry of the transistor base on
its junction characteristics." A. L. Zakharov: "Theoretical analysis of
current-potential characteristics of the injection into the blocking layer."
Yu. S. Ryabinkin: "Electric field in semiconductors between junctions accord-
ing to the type of conductivity" and "Effect of the diffusion of carriers
on the transfer coefficient of the pin-field transistor." V. A. Chuyenkov
was mentioned. The following persons took part in the discussions: Z. S.
Gribnikov and V. B. Sandomirskiy. S. I. Pekar noted in his final speech that
great success has been achieved in the research of semiconductors. In the
participants'name he thanked the members of the organizing committee from
Tbilisi which were under the direction of A. I. Gachechiladze (deceased), for
the excellent preparation and organization of the conference. A resolution
by the conference noted a strong trend toward centralization of investiga-
tions on semiconductor theory in Moscow, Leningrad, and Kiyev, and stressed
the need of extending this activity to republic capitals and other cities.
It was recommended to hold the next conference in Kishinev in 1962. There
are 20 references: 14 Soviet-bloc and 6 non-Soviet-bloo.
Card 9/9

TOLPYGO, K,B.
State of the theory of polarization of ideal ionic and valency
cryotalse Uspofizenauk 74 noe2s269-288 je 161, (MM 146)
(Ionic crystals) (Lattice theory)
V/11

TOLPYGO, K. B.
Dissertation defended for the degree of Doctor of Physicomathematical
Sciences at the Technical Physics Institute imeni A.F. Ioffe in 1962:
"Selected Problems of the Theory of Nonmetallic Solid State.n
Vest. Akad. Nauk SSSR. No. 4, Noscow, 1963. pages 119-143

33349
S/18I/62/004/001/018/052
911,7000 (It 413 //l/4(/ 13(ir -I-) B108/B104
AUTHORS: Demidenko, Z. A., Kucher, T. I., and Tolpygo, K, B,
TITLE: Frequencies and amplitudes of atomic vibrationa in cryn:als
with diamond lattice for a wave vector directed along the
cube face diagonals
PERIODICAL: Fizika tverdogo tela, v- 4, no, 1, 1962, 104 109
TEXT: On the basis of previous papers /K. B. Tolpygo, FTT, 943, 10611;
Z. A. Demidenko et al. FTT, 3, 2482, 1961), bhe authors calculated -the
natural frequencies in germanium for the wave vector r pointing in the
(1; 1; 0) direction. The six dispersion curves, WM, calculated in fou--
different approximations are somewhat different from one another, The
vibrations corresponding to branches 3 and 6 are entirely transverse JO
and TA). The other vibrations are mixed and have a purely longitudinal or
transverse character only when 0; 01 or [,r; 1r; O~ (Table 1
There are 1 figure, 3 tables, and 9 references: 4 Soviet and 5 non-S'0v1e7".
The four most recent references to English-language publication.', rc,~-trj a.,i
follows: B. 1.1, Brokhouse a. P. Y. Iyengar. Phys. Rev., 111, 747~ 1)56:
Card 1

33349
3/~, 8- /62/004/00 ~ /0-w 81'052-
Frequencies and amplitudes ... B!08/B!04
Chochran, Phys, Rev. Lett,, 2, 495, 1959; Proo- Roy, Soo_ 260,
1959; Chose et al. Phys. Rev., 113, 49, 1959; B. 0, Brokhouse, Phys. Re-7..
Lett., 2, 256, 1959.
ASSOCIATION: Institut poluprovodnikov AN USSR Kiyev Se-nicon-
ductors AS UkrSSR, Kiyev)
SUBMITTED: July 12, 1961
and P2 Legend: (A~ branch no; (LO*) long,-~
Table 1.. Components of
nal optical vibrations; (TO) transverse optical vibrations; (LA',
tudinal acoustic vibrations; ~110A/' transverse acouszls vibrazfons,
Card 211~2

AUTHORS:
TITLE:
PZRIODICAL:
S/181/62/004/005/013/055
B104/BI08
_Tpipygo, X. B., and Chayka, G. Ye.
Thermionic emission ofiionic semiconductors in strong fields
Fizika tverdogo tela, v. 4, no- 5, 1962, 1146 - 1153
TEXT: -.hermionic emission of a semiconducting cathode with consideration
o~ the variation in electron concentration and electron temperature under
the influence of an external field is calculated in a simple approximationt
as in experimental conditions the anode current is assumed to heat the
semiconductor. Because of the increased electron concentration and
conduction in the i;urface layer-of the semiconductor, heating of the
electron gas has little effect on the results in the conventional methods
of measuring thermionic emission. heating of the electron gas has to be
considered only in semiconductors with a high electron mobility and if
current is very strong. In this case, calculation confirms the results
of S. Levitin (Tr. Soveshch..po katod. elektron., Kiyevi 1959- Izd.
'~hTF, 23, 2159, 1953) who
All, USSR, Kiyev, 1952; ZhTF, 23, 1700, 1953;
Card 1/2

181/,62/004/005/013/055.-
Thermionic emission of ionic ... 104/B108
j
established the existence of a second regidn-6f space charge. Besides,
this a "stripping" and a rapid increase 6iAh62,emission current are possibl'
if the anode voltage reaches a given valuo. ---i%ere are 3 figures and 1
table.
Z,
ASSOCIATION: Kiyevskiy gosUdarstvennyy univer6itet im. T. 4. Shevchenko
(Kiyev State University imeni Shevchenko)
-..-IITT.ED: December I
U", 15, 1961
S
Card 2/?,..

5/181/62/004/007/009/037
B102/B104
AUTHCR: Tolpy'go, K. B.
TITLE; Study of the long-wave vibrations of diamond-type crystals
taking account of the long-range forces
V. 4, no. 7, 1962, 1765 - 1777
PL-RIODICAL: Pizika tverdogo tela,
TEXT: In continuation of earlier papers (Tilashkevich, Tolpygo, ZhETF, 32,
520, 1957; DAN S33R, 111, 375, 19561 ZhETF, 32, a66, 1957; 36, 108, 1959;
36, 1756, 1959) and using formulas derived earlier (Tqlpygo, FTT, 3, 943,
1961) the author studies the long-wave vibrations of homopolar crystals
taking into account the Coulomb interaction of the dipole moments in-
duced in the atomic shells, by the nuclear displacements and short-range
forces. Not only the forces acting between the neighboring atoms (which
are cuadratic in 6~1) but also the interaction forces between the next
S
neighbors but one are considered. The natural vibration branches (acoustic,
optical and light vibrations) are classified. The acoustic vibrations are
Card 1/2

3/181/62/004/007/009/037
Study of the long-wave.... B102/B104
then studied and an explicit formula is derived for the diDole moment of a
unit cell induced by them. Dispersion and dipole moment oP the optical
vibrations and, finally, dispersion of the light vibrations are studied.
The electrostatic potential occurring in inhomogeneous lattice deformations.,."
(acoustic and optical vibrations) is calculated and the birefringence of
lipht as well as the nature of the additionally oc&Urring light waves
caused by spatial dispersion are studied, Though the results agree
aualitatively with those obtained in earlier papers, numerical estimations
for Si and Ge give different values. There are 1 fie
gure and I table.
ASSOCIATION; Kiyevskiy gosudarst-vennyy universitet im. T. G. Shevchenko
(Kiyev State University imeni.T. G. Shevchenko)
S93,14ITTED: January 29, 1962
Card 2/2

S/181/62/004/012/041/052
B125/BIO2
AUTHORS: Yevseyevj Z. Ya, and Tolpygo, Ke.~-
TITLE: The wave function and the energy,of a NaCl crystal
incorporating an excess electron
PERIODICAL: Fizika tverdogo telai v- 4, no- 12; 1962, 3644-365.3
TEXT: The method developed.by K. B. Tolpygo (UFZhp 2p 242, 1957; ETTx 4)
3644, 1962) for the investigation of crystals incorporating.sn excess
electron is extended to NaCl crystals in the many-electron variant with
orthogonalized functions Here differing -from K. B. TolpYo (IM, 4,
3644, 1962), the polarization.energy is'ta~.en 'into account in'the diagonal
matrix elements only. All exchange integrals are calculated directly from
the wave functions obtained by D. R. Hartree, W. Hartree (Proo. Roy. Soc.
A.9 193j 2999 1948). The functions ~, (which describe the motion of the
excess electron in the vicinity of the s-th crystal site) can be completely
orthogonalized using the T-functions of the inner electrons of the
Card 1/4

S/18/62/004/012/041/052
B125 B1 02
Thet Wave flInction and the f ~ 14 1 d-, one obtains
neighbors* For the matrix elements H s . H ss 8
H. (p) XV (p) d% syl,
I (p) (p)] (p) d-v -t- (14)
XI
X,, (p) V.X 2
X,
.(P)[V,,.(P)
-4-2.
2
4kd't -ASP.'
2
using
dc
Card 2/4

S/181/62/004/012/041/052
'The wave function and the B125/B102
A
After a lengthy calculation f H di 0-1534 follows from (14) and
H u 0*-2322 when,all the components are taken into account. After numerical
calculations in ell' tic coordinates the values*.
a a
R 1,1 . 0.000299; .9 22 -0-005976 and H 12 00036613 are obtained.from
the general formula
A Hz.,d-c-i a.'!*
H
. 4A.,
all, a."' k
for the nondiagonal elements (in this forriula'. it is sufficient to sum up
over the most adjacent neighbors of the ions at 'and V1 denotes
the Madelung potential. By calculating the-nonorthogonality integrals
Cf,'i~=0.02236;, C2141=0-00816;
(25)
Cla=~-0.16454; C,-,'1S'=0.00j0d6.
Card 3/4
IMF
~M

S/181/62/004/012/041/052
The.wave function and the B1-25/B102
is obtained. After simplifying the formula for the Hamiltonian
the coefiiciento A(k), B(k) and C(k) are expanded in a power series of k
(up to k inclusively). The result is E(k) - 0-04799 + 0.042117 k2. The
energy minimum lies in the center of the band E(O) - 1.30 ev.and the
effective mass g 0;42 follows from the quadratic term
E(k) - 0'-04799 +/m0.;42 17 k2. The band width is found to be -J5.6 ev and
the function E(k) is strongly anisotropia. There are I figure and
2 tables.
ASSOCIATION: Kiyevskiy gosudarstvennyy universitet im. T. G. Shevchenko
(Kiyev state University imeni T. G. Shevohenko)
SUBMITTED: july 16, 1962
Card 4/4

TOLPYGO, K.B.; CHOU, G.Ya.
Distortion of the distribution function of electrons in a semi-
conductor by selection of the thermocurrent and latter's effect
on the intensity of the thermionic emission. Fiz. tver. tela 6
no. 5:1476-1484 MY 164. (MIRA 17:9)
1. Ulyevskiy gosudarstvewnyy universitet iineni Sh(---vchenko.

f- v I
F,
.51
fing, Map b ~ " MR

MORRO) Z.A.; TOLPYGO, K.B.
Dipole moments and some lattice sums Ln diamond-type 'crista2s,
Fiz. tver. tela 6 no.11.3251-3258 11 164. (IMIILFLA 28,-.1)
1. Institut poluprovodnikov AN UkrSSR, KLyev.

~5 F~-

DEMIDENKO, Z.A.; TOLPYGO, K.B.
Rolo of long-range forcoo in electron scatterIng by phoncns Ln
a homopolar cryatal. Fiz. tvar. tela 6 no0h,_3321-3330 N 164.
(MIRA 1&.1)
1. Institut polupro-Todnikov All UkrSSR, Kiyev.

DANIEk)V, V.I.; KRUGLYAK, Yu.A. [Kruhliak., Iu.o.); TOUPYGO), ~,B.[Tolpyho, K.B.);
SMIRKO, O.V. -
Statistical analysis of a p.rotein text, Do.pp. tk?i no-,5:E`27-630
165. (1 UI RA 18: 5)
1. Institut, fizicheskoy khir.-di AN U~x-SSR.

L 36328-66 EWTW/T IjPW AT
ACC NR; APG015782 N-F SOUICH CODE: UVOCO&S-ld-, 30/005/0350/0-85-Y-1
i AUTHOR: - Tolpygo, K. B.; Chnyka, G. Ye.
t
O:IC-: Kiev Stnte University im. T.G.Shevchenko (Kiyev.-;I-,iy go.9tidnrstvcnnyy universitet)
TITIZ: Distortion of the electron distribution function in n fjemic~oi~idduo~
Y the
Lhermionic emission current /Report, Twelfth All-Union Conference on-the Physical
Bnses of Cathode Electronics-held in Leningrad 22-26 October 190/
SGOWN: AN SSSR. Izvestiyn. Seriyn fizichesknyn, v. 30, no. 5, 1966, 850-853
TIYIC TAGS: thermionic emission, semiconductor crystal, Riclinrdgon equation, elec-
tron distribution, kinetic equation
API~TIITT: The authors improve their earlier calculation (Fizikn tvordogo teln, 6,
1,176 (1964)) of the correction due to the asymmetry of the electron distribution func-
tion to the Iticluirdson formula for a semiconductor in order to take into account also
the distortion of t e electron energy distribution and the difference between the
effective masses of the electron in the semiconductor aryl in the vacuum. The follow-
ing throo longths nro involved In the problem: the electron monn free pnth for moment-
um (direction) change; the electron mean free path for energy chnngo (interaction with
the lattice); and the Debye screening distance. These lengths are assumed to differ
greatly from each other and to increase in the order in which they are mentioned above
C,ard

L 36328-66
ACC NR: AP(3015782
0
,The region of the thermionic emitter near the surface is divided into three zones whme.
thiciQlesses correspond to the above-mentiQned lengths. The electron wave functions are'
treated in the effective mass approximntion and approximate solutions of the kinetic I
icquntion in the different regions are suitably Joined at the botuidaries. It is conclud-
ed that the tbamionic current as given by the Hichnidson formula ahoulo be multiplied
by the following correction inctort (mo/m) (I + 3me/21(m) (I - M/GXm)1/2(3mo/2Km)) , where
.m and me are the effective masses of the electron in the crystal and in vacuum, respec
lively, M is the ratio of kr to the square of the velocity of sound, and K is the ratio
iof the work function t6 Ia. This formula is valid for large values (,:WlO) of K. Orig.1
art. has: 8 formulas and I figure.
SUB CCDE: 20/ SUIN DATE: 00/ ORIG REF: 006/ OTH REF: 000

L U1823-67 -EWT(1)/EWr(m)/T/EWPW/ETI IJP(c) JD/GG
ACC NRi
AP6030955 SOURCE CODM' UR/0181/66/008/009/2587/2593
AUTHOR: Tolpygo. K. B. ; Sheka, D. 1.
ORG: Kiev State University im. T. G. Shevchenko (Kiyevskiy gusudarstvennyy
universitet)
TITLE: Theory of the intrinsic absorption of light in NaCl-type crystals
SOURCE: Fizika tverdogo tela, v. 8, no. 9, 1966, 2587-2593
TOPIC TAGS: light absorption, sodium chloride, intrinsic light absorption,
electron bands, trihole band, sodium chloride crystal, refraction index, absorption
coefficient, incident light
ABSTRACT: . Principles developed earlier by K. B. Tolpygo, D. I. Sheka, and-~~.
Ya. Yevseyev on electron and tri-hole bands in sodium chloridArystals (Fizika
tverdogo-tela, 1963, no. 5, pp. 2345 and 2609) were used as a basis for a study of
the intrinsic absorption of light related to band-to-band transition. Values obtained
on the index of refraction, the coefficient of absorption, and reflection, as a function
of the frequency of incident light, were in good agreement with experimental data,
Card 1/2

L 016~3-oi
ACC NR- A116030955
0
both in relation to the shape of the curve and the order of magnitude of the coefficient;
of refraction, Orig. art. has: 9 formulas, 1 table, and 3 figures [Authors'
abstract] [SP]
SUB CODE: 201 SUBM DATE: 10Jan66/ ORIG REF: 004/ OTH REF: 002/
2/2 -fv

W, -AP6036949 (A. IV) SOURC9 CODES UP/0181/66/008/011/3
AUTHORs 4aping V, Go; 2L"WON - ~B- ~
ORGt Kiev State University in. T.G. Shevchenko (kievakly gosudarstvewqy universi-
tat)
TITIES Choice of basic functions in the theory of -valence bands in diamondlike crys-
tals
SOURCEI Fizika tvardogo telas ve 8* not lip 1966, 3156-3162
TOPIC TAGSI valence bandl semiconductor band structurej semiconductor theory
ABSTRAM 7he article analyzes the requirements for a choice of basic functions in
the many-electron theory of valence bands of diamondlike semiconductors. A theory
developed earlier by the authors which predicts the existence of eight doubly spin-
degenerated valence bands (neglecting the spin-orbit interaction) is compared with
other theories (utilizing the method of strong coupUngp or operating with bonding
and antAbonding equivalent orbitals) which yield only four valence bands. Additional
valence bands are obtained by using various space functions (centered on different
atoms of the unit call) for electrons forming or bonds with opposite spins, which
makes It possible to allow for the correlation in their motion. The identity rela-
tionships obtained from the proposed theory and tying-the energy, values at symmetri-
Cal points of the Brill zone to the cyclotron constants and the lattice constant

I ACC Nib 1~ ~MAQUO

-ACC--NR, --AP7005315- SOURCE CODE; uR/o18W67766~/ooV6o07/66oq
AUTHOR: Yevs eyev, Z. Ya.
ORG: Donets Polytechnic Institute (Donetskiy politekhnicheakiy inirtitut)
i
TITLE: Microscopic theory of F centers in an NaCl crystal
SOURCE: Fizika tverdogo tela, v. 9, no. 1, 1967, 3-~
TOPIC TAGS: colorcenter, sodium chloride, wave function, ground state, crystal
vacancy, laron, electron paramagnetic resonance
_po
ABSTRACT: The authors calculate the energy of the ground state of the F-center elec- I
tron in an NaCl crystal and the values of the wave functions 1*(0)12 at the first
'three coordination spheres, using a procedure described by one of the authors earlier
(Tolpygo, UFZh v. 2, 242, 1957), but with a better choice of bases quasiatomic func-
tions, obtained in an earlier paper by the other author (Yevseyev, FTT v. 5, 2345,
1963). The wave function of excess electron is sought in the form of a linear com-
bination of quasiatomic functions centered relative to the lattice points and ortho-
Gonal to the wave functions of the internal electrons and to the wave functions of
the surroundings. A value of -5.1 ev is obtained for the energy of the ground state
and is used to calculate the energy of thermal dissociation of the F center into a !
vacancy and a polaron. The 'value obtained for the dissociation energy (1-9151ev)
agrees well with published experimental data# The c9:1culated values of 1*(0) 2 also 1
agree with the experimental data on the byperfine splitting of the parmagnetic reso-
1/2
card
[

ACC NRs AP7005315
nance line, with the exception of the first coordinai ion sphere. The authors thank
A. B. Roytsin for consultation on experlmental methods for determining MO) 12. orig.
arts has: 17 formulas and 4 tables.
SUB CODE: 2D/ suBm ikATE: 2BPAr66/ oRiG MW: 013/ OTH REF: 010
card 2/2

ZUYEVJ, V.A. ('Luiav, V.0.1, SACHEM, A.V,; TOLPYGO, K.B. (Tolypyho,K.B.-I
Kinetics of the photloconductilrit7 of thin semiconductor
having. 4--rapping and recombiwat-Ion levels. UL-. fiz.zhu--. 10
no. UM76-11.86 N 165. (MMA 18:12)
.1. Institut poluprovodnikov AN UkrSSR, Kiyev. S,ubnitted Dec.
15, 196141.

L 830C-66 E';',-i ( I/E ml (h !jP (c) AT
ACFNR: AP5528920 - SOURCE CODE: UR/0185/65/010/011/1176/118~
-AUTHOR: Zuyev V. 0. Zuyev, V. A.; Sachenko, A- Y _y
Tolp-go,
K. B.
t11115 5 7)2
~ORG: Institute of Semiconductors,IA-il UkrSSR (Instytut napivprovidnykiv AN UkrSSR
TITLE: Kinetics of Rhotoconductivit of thin semiconductor layers having surface
levels of attachmentand recombination
SOURCE: Ukrayins1kyy fizychnyy zhurnal, v. 10, no. li, 1965, 1176-1186
TOPIC TAGS: photoconductivity, semiconductivity, semiconductor carrier, relaxation
process
ABSTRACT: An Investigation was made of the photoconductivity of a semiconductor qf
finite.thickness having attachment and recombination levels on the surface. A general
expression for photoconductivity a was derived, with the aid of which the dependence
of a on the absorption coefficient and the frequency can be obtained. In deriving a
the following assumptions were made: 1) the impurity semiconductor is of the n-type
and its donors are totally ionized. There is no attacbment in the volume and the
nonequilibrium. carriers are characterized by the volume lifetime T. 2) In the region
of volume charge the distribution of-carriers is of quasi-Boltzman type. 3) The ad- L
ditional concentration of holes p, in the e ssential region x - (.2-3) Lp considerably
exceeds equilibriuri.-po.- The cases of sinusoidal., rectangular, and 6-form. modulation
Card 1/2

L 8300-66
ACC NKt AF)U;e0qeU
of.light we're considered. For 11thinil specimens (d < 1Lpj) a time dependence of photo-
conductivity was obtained.in case of ff-.; and 6-modulation. This dependence shows that
in.a limiting case of a fast exchange of surface levels with bands,the relaxation of
photoconductivity is monoexponential. In this case the characteristic time of the
photoconductivity decrease is the lifetime of the nonequilibrium carriers. If Teff
,is known, the rate of surface recombination S can be determined. When the lifetime of
carriers of the levels is considerable, the relaxation of photoconductivity is not
monoexponential. For rk model,with one surface level there are two exponential sec-
tions of photoconductivity relaxation. One characterizeathe carrier recombination in
the volume and on the surface, and the other is linked with the monopolar part of the
photoconductivity. The second' sect;ion can be attributed to the capture of minority
carriers.of the surface level. Orig. art. has: 3 figures and 36 formulas. (JAI
SUB CODE: -20/ SUBM DATE: 15Dec64/ ORIG REP: 009/ OTH REF: 004/ ATD PRESS-

L 3lh6-66 EW(l) IJF(c)
NR: 0368
~/6&~/
60~/
535-361
AUTHORS: To2Rygo, K. B.; Chalyy, A. V.
,TITLE: Structure of a scattering medium of finite thickness from
'data on multiple scattering electromagnetic radiation
SOURCE: Zhurnal prikladnoy spektroskopii, v. 2., no. 5, 1965, 447-460
;T
OPIC TAGS: light scattering, electromagnetic wave scattering,.mul-
tiple scattering, transport equation, distribution function
-.!ABSTRACT:. This is a continuation of earlier work (ZbPS v. 1, 1965L
!in which the radiation transport equation was solved for a semi-infin-
lite,s,cattering,medium, and in which information was obtained on tbi
ocattering-particle size distribution function from experimental data
Pn multiple'scattering of electromagnetic radiation. In the present
_,caper the problem is solved for the case of a'scattering medium of
ifinite thickness. The calculation,procedure is similar to that of the
paper, with allowance for the'ahanged boundary conditions.
1-card. 1/2

22-96-66 DIT(I)/T/ A (h) UP(c) AT
ACCESS-iolf ns AP5014~82 uft/0181/65/007/006/1190/1"IY4
AUTHOM Tolpygot Ye. I*; Tolpygot X. D*; ~~~Zkff MO K*
TITLE: Auger recombination'with participation of carriers bound to different
dentere
SOUPOSt Fizika tverdoGo telat v. 71 no. 6, 196~r 1790-1794
TOPIC TAGS: electron recombination, Impurity level, semiconductor carrier
ABSTRACT: This Is a continuation of earlier work by one of the authors
(Sheynkman, FTT V-,7, 28, 1965 and earlier)p where the Aug4ir recombination,
,mechanism vas proposed for multiply-and eingly-charged centers, wherein the
~capture of a minority carrier is accompahied by the emission into the-bond of
aInother carrier of opposite sign, localized on the same center. In the present
article the autho.ro present a quantum-mochanical calculation of the oross
-section for the capture of minority carriers by shallow Bingly-charged neutral
particles# uhon the energy released In transferred to the majority carrier#
C0,4

L 2296-66
ACOESSION MRs AP5014582
which is- localizs4~ on a neighboring canter having the satie Ionization energy
or larger. This carrier is emitted Into.the nearest bond., The capture of
carriers by deep centers id also discussed., Numerical estimates show that
Auger recombination processes can become comparable with or even larger then
radiative and other types of recombination at ou"Loiontly low temperatures
"21 -22
and at high impurity concentrations. , Values on the order:of 10 10
are obtained for semiconductors of the Gep Si, o1 GaAs type in the case of
shallow levels, and of the order of IOP-19 - lor* 0 for capture by deep levels.
This,indicates that a capture of a carrier by s,ahallow center of large radiump
-with, transfer of the energy to a carrier.of opposite sign localized on a
nei hboring deep center, would be most effective* The authors thank E. L
9
5Rashba for valuable critical kemarkaj and V. Te. LashkarevV,, Kalashnikov
_h, nterest in ion, 9'?
and Y. b. Donch-Bruyevic
1gure -in 5-Comulaae
Ori art ~hast urepw_
ASSOOIATIONt Itiatit" poluprovadaikov AN Oki-OSRO Hie* (Institute of Seldi.
C~trd

aig a MOSM -4 M ME' UP K ?lq0,rNR21- Kkl- WE M-0-9- ~.,, -'

L 2256-,9.5 F.WT(J)/T/EWA(h) IJP(c) -AT
ION IM2 AP5007687 S/OV5/65z/O1JD/()03/02"/0266
A~MORtl -_~P.W9vt..V. 0. V., A.)i Savchenko, A. V.;- Tolpybop B. (ThIPUGO
d
:TMB: - Kinetics of photoconductivity in semiconductors iat~ minority carrier cap-
ture levels on the surface
SOUTCE: Ulkiwinallwy fizychmy zhurnal., v* 10j, no* 39
1965, M-P-66
ITOPM TAGS: _% semiconductor# minority carrier,, photoconductivity,, capture level,
surface state
-7--The - dependenc -.)f :photoconductivity - on--the -modulation --frequency and--on--
el
riiiiete, II
the-is- M~Conductot_tW ere. a determined -for-the case~of sinusoldal2r modulated
4nd4tiongly'vibsorbed Light.' Account Is taken of the-bendi of-the-bands at the -
imwfacep due to the existence of a ral surface levels. Tt Is assumed that cap-
tv"
of minority carriers and adhesion of majority carriers on the surface are
Ible. 210 problem Is solved In the linear apprMdmation wder oeveral suwu-!
P0133
:,fyiM aaraiptims. The e3tpression obtained to the aux or the bipolar ph*tocon-
I
ductIvity and the monopolm photoconductivity. The contributions of these two
C-Ord

J-L 2256_66_-~
AMMION -IM:, AP5007687
cavonents are different for different: bending of the bands and,depend on the ree-
tio of the lifetimes-of ths carriers in the~bands and at the surface levels. An
analysis of several limiting cases is presented. The nonstationary patocouduct-
ivity produced in the case when strongly absorbed light produces carriers of both
signs to considered for sinuzoldally modulated light., and the dependence of the
cmTlex photoconductivity on the frequency of modulation and on the parameters Of
the semiconductor Is determined. The results show that the frequency dependence
iof the photoconductivity depends appreciably on the ratio between the volume and
Isurface pu ieters of the -semiconductor and can vary in proportion to the frt-
quency raised to negative powers 1/2.. lp 3/2,, or 2. The transition from one type
of f&U-off to the other depends on the se-1condmator parameters. It Is also
shown that# depending on the surface kinetic parameters, carriers of mW one pa-
2,arity can accv=alate on this surface. The expressions obtained can be used to
Interpret phatoconductivity-kinetica experiments in which the surface has a strong
effect,, and also to determine the parameters of the surface centers. ffThe authors
thank Candidates of Pbysical Mathematical Sciences V. G. Lit
Onitko, for Interest in the work." Orig. art. hast 3 figure and It
qq
Car
d 2/3,

DAUTT C-17 Ir
- ~7 1*1 - TOLPYGO) K.B.; SHRAIMKO, 0.11.
Oy
and Of- the ~!-Dde of prct,~-'n
JUN SSSR 163 ro,5:1282-12194 kw', 165. r , I, j
OMIRA 18:8)
1- Illstitut fizicheskoy khimii im. L.II.Ploarzhevskogo AN UI=SSR.
Submitted October 8, 1964.

CHALYY, A.V.
Structure of a scattering medi= of finite thickness on data of
multiple scattering of electromagnetic radiation. Zhur. prikl.
spektr. 2 no.5:447-460 My 165. (MIRA ISO)

TOLPYGO, RLPVGO~ K.LA., FJ1EYNKXAM~ M.K.
Auger mconbiriations !wlth the of carri--fra Ljunj
to various c;enters. Fiz. t-,rpr. tela 't no.6.1790-1794 in 165.
(1111--'RA
1. Ingtitut poluprovodnikov Al UkrSSP, Klyev.

'Von'];
10 rAnd3*.'-1?5-2-6
Z,
Z~ur- ace
m-., RP 18 C-

-Enve-gtigation or W145 sr-ruc vure v j-
'TrTTIS! rarliation

L 3 - ~6 5
Ap501004r')
A C. C ES S i ON NR: '.ransport equa cm for
Mrs
f I'mm
IN

TOUIGO,.K.B.j. CHAYKA, G.Ye.
Distcrtion of tllr- electron distrihuti~,n function in a si~,mlcrnductor
by th-?rmal current separation and its effect or. "he magn-itude of
theimionic emission. Radiotekh. i elektron. 10 no.1:199-201 Ja 165.
(MIRA 18:2)
1. Kiyevskiy gosudarstvernyy universitet im. T.G. Shevelienko.

jl~jjTLj)V V.I.; IM-GLYAK, 'fu.A.; T01PY-30, K.B.;
ad'acen-~ am-Eno a::id radl~.als fr.
Doi&-l. AN SSSR lf~,O nc.5-11911-1193 F 16'
A 18:2)
Institut fizicheskoy ldhimii im. L-V- Pisarzhevskogo AN UkrSSR.
Submitted june 4, 1964.

....................
~VM81/64/006/004/UOA166
Am== NR: w4028446
AJJTHORS.-. 'Lyapins V* G.; TolpMo,, K* B.
-diamond type
TITM t InveBtigation-of the dispersion 3'aw E (k) in the hold bands of
crystals for symetrical directions.
SOMME: FizJJca tverdogo tela, v. 6. no. 4, 1964a 1158-1166
'TOPIC TAG$s energy dispersionp hole band,- diamond structure, oMtal energy, wave
.'function
ABSrRAGT: The authors studicka the energy of diamond-type.crystals with single
',electrons removed. They sought to obtain a wave function corresponding to those in
p;~(r4ous works (K. B. Tolpy*;o and A. M. FedQrqhonkq,_ Zhu, F) 31, .045, 1956; Ye. I.
Kaplunova., FTT2 1; 177, 1959) in the form of a linear combination of antisymme-
trized products of functions of individual sigma bords, with an elecbron being
absent at one such bond. In neglecting spin-orbit interaction.9 the secular eq=-
tion relative to the energy of the crystal for the directions A and A of the
wave vector is examined. The authors preserve the same matrix elements of the
Hamiltonian as Kaplunova but without the assumption of orthogonality'of one-elec-
tron functions forming the sigma bond. The analytical dependence of E (k) at
Cwd 1 1/2

1AMMION NR: A028446
arbitrary values of IkI is found for several energies at the'edge of the Brillouin
band at the points X4 and L3,.for germanium and silicon. The agreement with
Iexisting- data is good. - Slight variations 'are thought to be due to simplifications
1: in the theoryt. neglect of deeper levels in constructing a function for an atom
with a vacancy, and neglect of integrals of nonorthogonality between the more
distant orbits and the matrix elements of transition foreven more distant neigh-
bors, For greater precision it would be necessary to know the wave funotions at
1great distances from the nucleus, but this would not eliminate the effect-of
neighbores and the.use of &nctions of isolated ato.ms is thu's unsysteqati~_
art. has: 1 figure.. I tablej and 24 formulas.
ASSOMMON.- Klyevskiy gosudaretvenziMuniversitet, im. T 0. Shevchanka (Kiev
State University) j.
ill; BUBMITTEDs 05NO"43 EML s 00
-SUB GODEs sso EG JW'SOVI 007
NO P orms 008
2/2.

c, er i:-iz:,
pciar Crystal
by -ne of 1.1he authorS (TolPY*CTC,

A~-RIPR Z*F.-IM"No

I'

KOROLIS E.N.; TURYGO, K.B.
Cha-racf/-,ristics of the dynamic.~:; of Zn:S type crystal lattices
with a mixed ionic-valence bo-od ard fractional variable ion
charges. Izv. AN SSSR. Ser. f.-'z. 28 no.6:942-950 A 164.
1. Kafedra teoretLcheskoy fizIki Kiyevskogo gosudarstvannogo
universiteta.

ACCMSION NRt AP4019032 G(/01 61/64/06/003/0741/0756
-,AUTHORC Tolpy*goj Ke Be
:TITLEt The wave function# normalization integralp and average charge of iond in
atala bf-thqKaCl We
-inaMletely polar cry
ZOURCEs Pizika tverdogo tela, v. 6# n'o.,3# 19649 741 "56
:TOPIC TAGSt wave-fundtiorit normalization i,ntegralg polar crystal, hybrid ionp ionic
crystalq binary crystalp.ioAic oharget cubic okystal,~hete'ropolar crystal
ABSTRACTt The author has examined binary ionic or7s" of the SWIM type which do
not.-differ greatly from strictly heteropolar crystals. His results prove td Ibe
rather accurate up to charges of 10-5 e,,bu~t the generalization for'.cabio crystals
such as GsC1 is eleaentary. He has diacuss& the concept* of effective andaverage
charges on ions In a crystal. The average charge is-determined by the coefficlent
of lines.-- combini&tlan of the wave function of each atom,found In a bgbrid ion-
valence .tate. 'The average charges and normalizatiow integrals were oaguted for
electror,s of all YU atop (where 21L is the tonal number of jitans In a binaxy
Wet-L), and also the normalization lntqW&la of NX_j and SX-2 farths *14*~rad
Ccwd 1 /41

ACOMION IR s AP4019832
coordinazes.of all atoms were com -for one or two. These computationa
put~d, except
were made for the ease in which the dif;erech wave funa.tions of different'at=s
entering into antioymmetrized yroducte are ubt fulky orthogavale -The author,
deterAined the accuracy of the statistical computations of the valubs, hip,. obtaiUS4.
ffe.f*ound that-the averap Rmiltonian of a-orystal reftess to the task of fludill
the intrinsic and mutual energies of.individual atoms.in their variou's states. "The
authu..: expresses his tbanks to N. Ir"14 az4 O..Strashko, for =ddn g a v=b*Y of
'computationso" Orig* irt. has# 2 figuiress'3 tableag and 60 fonmUL".
ASSWTATIONs. Institut polWorto~nik!w ANMa-SBRO. Myev'(1hatitute-Of SadpWiductore
AN UkrSSR):
INCLs 00
SUMaTMs Uft63 DM ACQO 311=64
,so corat NO RV SOVt 016 S "009
card 2A%_- I

TOLPYGOP K.B. [Tolp7ho, K.B.]
Statistical method for calculating the normalization
integral'and the mean ionic charge iii NaCl type crystals
deviating from heteropolarity. Ukr. fiz. zhur. 8'no.10-
1050-1063 0 163. AMMA 17:1)
1. Institut poluprovodnikov, AN UkrSSR, Ki-yev.

TOLPYGO,
Wave function, normalization integrals, and mean ion charges on
nonpolar NaCl type.crystals. Fiz. tver. tela 6 no.3.-741-756
Mr 164. (MIRA 17:4)
1. Institut poluprovodnikov AN UkrSSR, Kiyev.
.~ - I

TOLPYGO, K.B.; LEVINSON, I.B.
Fifth All-Union Conference on Semiconductors. Usp. fiz. nauk- 31
no.3s557-566 N 163. (ERA 16:12)

TOLPYGO, K.B.; SHEKA, D.I.
soign�
spin-orbital splitting of hole zones in alkali halide crystals.
Fiz. tver tela, 5 no.9t2609-2619 S 163. (MIRA 16:10)
1. Kiyevskiy gosudarstvennyy universitet im. T.G.Shevehenko.

KOROLIS E.N.; TOLPYGO, K.B.
Dynamics of ZnS type crystal lattices with fractional variable ion
charges. Fiz.'tver. tela 5 no.8s2l93-2206 Ag 163. (MM 16:9)
1. Kiyevskiy gosudarstvennyy universitet im. T.G.Shevehenko.
(Crystal lattices)

TOLPYGO, K. B.
IfTheory of Ideal Crystal Lattices."
report submitted for the Conference on Solid State Theory, held in Moscow.,
December 2-12., 1963, sponsored by the Soviet Academy of Sciences.

ACCESSION NRt AP3012354 S PO.185~63'/O~8/07671050/106'3
AUTHORI Toloy*go, K. B.
TITLE: Statistical method of calculating the normaliziti ion integral
h
and the mean ion charge.in.crystals of th sodiu 1chlorid type whic,
deviate from heteropolarity ij?
j!
SOURCE: Ukrayinal.ky*y fizy*chny*y zhur aV, v 8 n:o!. i0, 19 6", i
.1050-106'3
e ndrm~a iza
TOPIC 1AGS: normalization integral, sodijm chlorid, 1 tion
integralp mean ion charge, :sodium chloridi6 mealh ion!charg,e, hetero-
polarity, crystal heteropolarity, heter ip6lariiy de,~;iation, aIodium
chloride.wave function, crystal wave f'; ' .0i c stal liol wave
4c ion
t
j
function, sodium chloride 'ion wave func i n
P
t
ABSTRACT: A statistical method 6f calculating: he ormallization
integral and the mean charge of ions inla NaCl- ype,cryptailhas
been made more precise and-an evaluation made of its eiror-as;re-
lated to heteropolarLty. 'The wave func ion of;each larti a point
!Card 112
-J

ACCESSION NRt AP3012354
is represented as a linearlouperpo'eitioq pf ionit and'atomicl4ave
functions, with linear'combination coefficient epiesintlLinglithe 1!
n ill if unctli, n
degree to-which the compound is io*ic IfThe cr 0 iis theni
an asymmetric product of the wave funcottons of t~e:varlods!: ions.
0
The approximate formulas obtained were clo6pared 41th exact- formulas
for the case of.A linear atomic chain,, !F r a ie-dime~slional
thr,
crystal lattice the estimated precisionlo~ the;approximat`~: formula
(derived form,cubic gymmeiry,considerat4o Ins)'Ind cates 'tha~t the
-+.--gtat a method may, be employed evenjin the. !$a of,,.a 'charge of
+0.5 e for-each ion. The author'thanksi , an 5 :I~lPekar of
A~adami.c~!
1 the Ukrainian Academy of Sci6nces for oub tintia~' hel;!i , the' solu-
tion of an unusual problem connected with the. k.: Orij.1 ar,t . has:!
3 figures, 2 tables.and 4i formulas.
ASSOCIATION: none
H*N !00
SUBMITTEDt 18Har63 DATE ACQ 2 N)v63 C
SUB CODE:
PH NO REF SOV: 10 )2 OTHER:.:! 000
2/2

L 1671-64 A C/ASD/?SD-3/1 J:!(',') JD
9
S/0181/63/005/009/260
,ACCESSION MR.- AF3007502
I- * 9/,i
Tolpy*go, __V,,B. jSheka Dt
[AUTHORS:
TITLE.: Spin-orbital splitting of hole bards in alkali-halide ~SUA~4s
'SOURCEs Fizika. tverdogo tela, v. 5, no, 9. 1963~ 2609-2619
TOPIC'TAGS: spin-orbital splitting, hole, hole band, alkali halido, crystal, K,
'Cl, wave function, antisymme-try, spin, wave vector, relatiVistic correction
ands in
:ABSTRACT: The authors have developed a quantitative theory on hile b.
alkali-halide crystals, Attention is drawn to the interaction '~r_ eloctr*oiz, full
considet-ation being given to the relativistic* correction and to correlation of
lelectron movements. In this development they employ wave'functions of nalido ions
'-(Cl~-)*as computed by Hartree' and the wave function of t~e crystal is conaLructed
"from the ant etrized products of the wave runction*YIS describing the state
jwhen at the it nion an electron is missing from one of the layers of the upper
'(3p) shell. A secular equation of the 6th order is.broken into two idontical
equations, corTesp9nding to the.expression for spin, and these are solved for throe-
[;ard. V2~

L 167~44-
ACCESSION NR: 03007502
symmetrical directions of the wave vector IF. Spirrorbital- splitting is proved to
be fundamental near'the center of the band 0), and Minim,ums of enerey are
ishown for the direction 9107. Near the center of the band, the energy in the
!lower branches depends but little on thq wave vector. 'the width of the hole band
is practically the same as that found without consideration of the relativistic
correcti6n. - Orig. art. has 1 3 figures, 1 table, and 25 Xo,rrhulas.
tet
!ASSOCIATION: Kiyevskiy goBudarstvanny*y universi Shevchenko (Kiev
Statd University)
&)BMITM.- 22Apr63 DATE ACQs 140ct63, ENCLt 00
SUB CODE: PH NO SOVs- 1006 OTHERs 003 i
.................. ......... . .............................. .. .......... .

0 1" G
L'i 19160-63 EW(l)/FW3~(q')/ ~j~)/ k)/EU?S A D/ JG9~
S 0181 6~/ 0 2
ACGESS1011 NRi AP~095326 '0)510C 8 1 3/2206
6,2
AOTHORS: K rol E. N. Tolpy*go,_K-. B.
TITLE: Dynamics of crystalline 11.-t-tis.,of the type,:ZnS with fractional variable
charges on the ions
SOURCE: Vizika tverdogo tola, V. 5, no. 6) 1963, 2193-2206
TOPIC TAGS: crystalline lattice, frictional charge, ion, Zn, S, In., Sb., potential:
energy, lattice vibration, valence electron,,,atom, homopolar crystal, adiabatic
approximation, Sigma bond, electrical field,.nucleus
AT33rRACT: An expression for potential energy and an equation for vibration of a
ZnS-type lattice have been derived on the assumption that in equilibrium valence
electrons are so disposed between atoms that each has a fractional average charge.
The.'authors generalize the computations of potential energy (found in a number
of papers) for ions and homopolar crystals on the basis of adiabatic approximation.--
It is stated that each pair of electrons connecting two neighboring atoms may
belong, with a certain probability, to each atom or they may form a Sigma bond.
When the nucleus is displaced, and also when there is an electrical field, these,'
Card.- '1/2

-63
L,1916o
ACCESSION NRi AP3005326
probabilities change, and this leads to a change in the average charge of the
atoms. Orig. art. hass 43 formulas.
!ASSOCIATION: Kiyevskiy gosudarstvenny*y universitet im. T. G. Shevehenko (Ki6v
1 State University)
14ITTED: LLMar63 DATE ACQz 06Sep63 ENCL: 00-
i SU3
SUP CODE: PH NO REF SOV- 012 OTHERi- W,~
ard 2/2

Characteristics of the dynamics of crysta).Iattices of the ZnS--Lype
for compounds with mixed ionic-valence bonding and varying atomic
charges. 'K. B..TdIpygo, E.-H. Koroll (15 minutes).
Relation of the electrical properties of Sb2Se3 with the crystallo-
chemical composition and zone structure. A. S. Karpus, 1. V. 8atarunas
(10 minutes).
ReDort Presented at the 3rd National Conference on Semiconductor Cormounds,
Kishinev, 16-21 Sept 1963

TOLM-01-K.-P--i KRISTOFFEL, N... red.
(Theory of vibrations of crystal lattia"-with deformed
atoms) Teorii kolebanii kristallichoskikh reshatok a de-
formiruemymi atoms i; lektaii, prochitannye v let
,#~i shkole
po toorii tvardogo tela. Tartu-Tyravere, Aunt 1
Tartuskii goo. unov, V61,2. 1962. 17 p. (M~JM16;4)
(Crystal lattices--Vibration) (Dislocation in ar7stals)

TOLPrGO, K.B.
Long-w~ve vibrations of diamond-type crystals taking long-range
forces into account. Fiz.tver.tela 4 no.7tl!765-1777 Jl 162.
(MIRA 1616)
1. Kiyevskiy gosudarstvennyy universitet imeni T.G.Shevehenkq.
(Crystals--Vlbi~ati -~rl ~,,

MgmaLot G.L. [Murmylo, H.L.1; TOLPYGO K.B.
Wave function and energy of band electrons in NaCl. Part 3.
Use of orthogonal functions. Ukr. fiz. zhur. 8 no.1:42-56
Ja 163. ~MIRA 16:5)
1. Kiyevskiy gosudarstvennyy universitet im. Shevchenko.
(Functions, Orthogonal) (wave mechanics)

VOROB'YF,V, A.A., doktor fiziko-matematicheakikh nauk., prof.;
BORISOV, R.I.,-kand.tekhn.nauk, dotsent; TOLPYGO, O.B.,
In; tekhn.nauk,. dotsent; KALLWSKIY, I.l.7
"High-v-oltage engineering.." Part.3j, N:).l: "Wave processes
and internal overvoltages in electrical systems" by L.I.
Sirotinskii. Reviewed b7 A.A. Voroblev and othera.
Elektrichestvo no.5:89-90 NY 161. (MIRA 14:9)
(Electric power distribution-Mgh tension)
(Sirotinskii, L.I.)