SCIENTIFIC ABSTRACT TAIROV, SH.G. - TAJCHMAL, S.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001754720006-9
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: July 13, 2001
• Sequence Number: 6
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

TAIROV, Sh.G., I
Dynamics of soil salinization in the western part of the -`i-.irvan
Steppe. Izv. All Azerb. SSR. Ser. biol. i med. nauk no. 4:113-
-125 160-. (MIRA 14:2)
(ORA LOWI-41-M-ALKAL! LAIMS)

TAIFOV, Sh.G.
U-;uching zry)rr)lithB of chloride- and sulfatle-rich saline soils from
the Kura-krau L/)wland. Izv.AN Azerb.O'SR."-er.biol.i raed.nauk. no.l:
117-123 161. Off-RA '24 :6)
(Y,ura-.Aras Lowland-Saline and alkali soils) (Leaching)

TAIROV, Sh.G.
Meadow Solonetz and Solonchak soils of the Shirvan Steppe. Izv.
AN Azerb. SSR. Ser. W0. i mpd. nauk no.(.:75-83 '61. (111,IRA 14:8)
(KURA IDWIAND-SALINE AIM ALKALI SOILS)

TAIROV, V.D., kandidat tekhnicheakikh nauk; ULITSKIY, I.I.. kandidat
tekhnicheskikh qauk, redaktor; TUROVSKIY. B., redaktar;
ZZLENKOVA. Ye.. tekhnicheakiy redaktor
[Planning structural panels for two- and three-atory dwellings]
Porektirovanie panellnykh konstruktail maloetazhnykh xhilykh
zdanii. Pod red. I.r.Ulitskogo. Kiev, Izd-vo Akademit &rkhitektW7
Ukrainskoi SSR, 1953. 74 p. [Microfilm] (MIaA 7-10)
(Buildings, Prefabricated)

ROKU1N, I.A., kandidat takhnicheskikh nauk-; TAIROV, V.D., kandidat
tekhnicheskikh nauk. *W-&A&MWMM1Q6-
Precast reinforced concrete elements for buildings in
machine-tractor stations. Nov. v stroi. tekh. no-7:14-36
155. MR& 9:11)
1. Nauchno-issledavatelskiy instituL stroitel'noj- tekbniki
Akademii arkhttektury USSR.
(Precast concrete construction) (Machine-tractor stations)

TAiAO.V3 Vladimir Dir-itriy_evich; VOLIVIGH, Nikolay Iosifovich; MEDVEDEV9
Mikhail Ivanovich. Prinimali uchastiye: BOCHKOVSKAYA, N.L.,
starshiy inzh.; YEZHEL', F.A., glav. arkhitektor; ALEKSANDROVSKP_' A.2
red.; ZELEVKOVA, Ye., tekhn. red.
[Built-up roofs) Sovmeshchennye pokrytiia. Kiev, Gos. izd-vo lit-
ry po stroit. i arkhit. USSR, 1961. 74 p. (MIRA 14:9)
1. Rabotniki Nauchno-issledovatel'skogo instituta stroitelInykh
konstruktsiy i Nauchno-issledovatellskiy institut eksperimentall-
nogo proyektirovaniya Akademii stroitel'stva i arkhitektury
USSR (for Tairov, Vollvich, Medvedev).
I (Roofs)

ACC NR, AR6010619 SOU11CE CODE: Ult/0196/65/'000/010/BO19,!BOI~q
AUTHOR: Talrov. V. N.
TITLE: HIgh-voltage Insulators for operation In a rarefied atmosphere
SOURCE: Ref. zh. Elektrotekhnika I energetika, Abs. 1OB90
REF SOURCE: Sb. Proboy dlelektrikov I poluprovodnlkov. M. -L., Energiya, 1964, 93-97
TOPIC TAGS: electric Insulator, high voltage line, upper atmosphere
ABSTRACT: Data are presented for the selection of the design, as well as approximate
formulas for engineering calculations, by means of which calculations were made and a design
was created for insulators for a dc working voltage of 4-63 kv. The insulators are intended
for operations at pressures up to 5 nim Hg In tile temperature range from -60 to +125C,
and to withstand vibration with a frequency of 5-1000cps at 10 g acceleration, 4000 impacts
with an acceleration of 76 g, and centrifugal acceleration up to 25 g. The design of the insula-
tors has been developed for serial plant production. [ Translation of abstract 15 illustrations
iand bibliography of 4 titles. [Le Im. V. 1. Ullyanov (Lenin)
t(Leningradskly el-tekhnieli. In-t) I A. Petrashko
SUB CODE: 09
Card 1/1 MIL P UDC: 62

BUKOLOV.? 1,Ye.; LSTAiMOV, K.V.; Z-U-Mi, V.L-_; TAIR'OV__V.~..
Complex compounds of strontium with some dicarboxylic organic acida.
Zhur.neorg.khim. 7 no.7,'1577-1582 J1 162. (MIRA 16:3)
(Strontium compounds) (Acids, Organic)

L 1553h-63 EM/EPF(c)/EKP(q)/IEWT(m)/ES(V)/MS- AFn.C/ASD ,.Ps-4/Pr-V
Pe-4 vu/JDAT/
ACCESSION NR: AP3004913 s/0120/63/000/004/0116/0180
AUTHOR: Pichugin, I. G.; Tairov, Yu. M.;.Rsgkov, D. A.-
Pre aring sil, ~hV%arbi L& stals
TITLE: p ic . c_Tbi~ Iry
SOURCE: Pribory*i tekhnika eksperimenta, no.A. 1963, 176-180
TOPIC TAGS: silicon. carbide, crystal, SiC,-'crystal growing
ABSTRACT: An outfit is described that permits developing a temperature of
about 2, 500C in a 500-cm3 crucible containing 10-4 -torr vacuum ~0 an inert gasj
The construction, including an'electrically-heated graphite blockVkset-of
temperatur e -distributing screens, a water-cooled. stainless-steel housing, aset
of electrodes, a vacuumizing system, etc. , is described in detail;'a structurali
drawing arda photo of its general appearance are presented. The avera:ge output
is 50 SiC crystals6 5 -7 -mm. thick (with 6 -7 hrs growing time), in one crucible.
Intended for semiconductor devices, the crystals have a carrier concentration of
Card 1/2

L 15534-63
ACCESSION NR: AP3004913
17 -a
5x10 cm . "The authors arethankful, to V. 1. A~ramov and VL~. N~ovikov
for a number of valuable hints in developing the outfit. Orig. art. has:
4 figures.
ASSOCIATION: Leningradskiy elektrotekhnicheskiy institut (L
Electrotechnical Institute)
SUBMITTED: 15jun62 DATE ACQ: 28Aug63 ENCL: 00'
SUB CODE: GE NO, REF SOV: 000
OTHER: 005
Card 2/?-

L EWG(j)(EPA(s),-2VEWT(m)/EPF(o)/EPF(n)-2/EWG(v)/EPH/EPA(w)-2/EWP(J)/
P
b) EWV(e) 4 Pe~-6/Pr.!4/Ps-4/Pt-IO/PL--4/Pab-10 AS(mp)-2/RAE1A(e)/RAE?A(c)/
EWP( pcr~
ESD(
gS)/ESD(t) JD ~/JG/RM/WH,
:ACCESSION NR: Ap4o46477 S/0032/64/030/010/1276/:L278.:;
AUTHOR: Pichugin, I. G.; Tairov, Yu, Yas1kov, D. A.
~TITLE: Laboratory vacuum furnace with automatic control for growing
silicon carbide crystals
'Uaya laboratoriya, v. 30, no
SOURCE:' Zavod 10, 1964, 12T6_12T8.
;TOPIC TAGS: silicon carbide crystal, single crystal growth, electric
;vacuum furnace, automatic temperature control, heat insulation zor-
:rection, semiconductor silicon carbide
'ABSTRACT: Automatic temperature control and a procedure for.correcti04
;of heat insulation and for changing the temperature gradient in the
electric vacuum furnace have been developed to secure.grovth of
~fect silicon carbide crystals for semiconductor devices. The.furnaee,~-,~~
p j
was described by the authors in pribory-*i tekbnika eksperimenta, noo
t4, 1963. The automatic temperature control ves based on measure-
ment of the ratio of the luminous flux from the heater to that from
.a calibrated-source. The filtered light signals from both sources
1 Card, 1 [2-

L 12000c~55
ACCESSION NR: Ap4o46477
~were received on an antimony-cesium photoerectric cell and then-am-
:plified and detected in the same circuit. Different signals from
;:two sources set in motion a mechanism which automatically changes the
'input voltage and hence resets the temperature of the heater to a.
;predetermined value. Deviation from the predetermined value in the
,2300-2600C range was plus or minus 3C,maximum. Theitemperature
~gradient in the furnace was improved b~11) changing.the number and
'location of horizontal heat.-insulatingNshields and 2) varying the
:current input according to the changing temperature profile of the
Correction of heat insulation was achieved by solving the
differential equation describing the distribution of heat flow in the
furnace on an electric network.. The n-type crystals, 5-T mm in dia-
meter, were grown on a 0:
_graphite iaphragm. Orig. art. ha 3 fi-gures.,-,
:and 8 formulas.
ASSOCIATION: Leningradskiy elektrotekhnicheskiy institut (Leningrad
Electrotechnical Institute)
SUBMITTED: 00 ATD PRESS: 3120 ENCL: 00
SUB CODE: IE, SS NO REF SOV: 00lr OTHER 001
Card..

L 014-66 EW-L(J)/T/EWA(h).----.IJP(a.).....----
ACCESSIUN NR: AP5021366 UR/0120/65/000/004/0213/0216
536.587 4*
dl~
AUTHOR: Kal'nin, A. A,; Tairov, Yu. M.-*,-Yas'kov, D.
TITLE: An automatic temperature control system for the growth of crystals of high
temperature resistant semiconductor materials
SOURCE: Pribory i tekhnika eksperimenta, no. 4, 1965, 213-216
TOPIC TAGS: "st a 'q
silico lLinsLe automatic temperature control, crystal at
ture, automatic control system, crystal growth, semiconductor single crystal,
single crystal growing
ABSTRACT: An automatic temperature control system for a 30 kw device intended f
the growth of silicon carbide crystals is discussed. The instrumental error i
reduced by a) the use of electron multiplication which reduces the intensity o;
photocathode illumination with simultaneous retention of a good signal-to-noise
ratio; b) the illumination of the photocathode by short pulses with the subsequent
restitution of the spectrum of the favorable signal; and c) by thermostatic control1l,
of the receiver, automatic brightness control, and uniform illumination of the I .
photocathode. The range of temperature control is between 2400 and.2600C but thial-
may be changed by an appropriate choice of the obtuator Alter, the dynamic error
-Card

L 00oi4-66 -- - -- - - --- - - 'I
!FACCESSION NR: AP5021366
of the control does not exceed �3C, and the transient process (when operating withl
a computer) is reduced 88 to 907. compared to operation with commercial linear
regulators. The influence of the thermostatic control of the growth zone on the
perfection of the structure of the resulting crystals is also discussed. Orig.
art. has: 3 formulas and 3 figures.
ASSOCIATION: Leningradskiy ele~.trotekhnicbeskiy institut (Leningrad Electrical
Engineering Institute)
�
SUBM=D: 2lDec64 ENCL: 00 SUB CODE: IE, SS
NO REF SOV: 002 OTHER: 001
2/2

tj
YA-CC. 1,11~- ADW022--)o SOURCEi CODE:
AUTHOR: Tairov, 'Ill, Tvf.
ORG: Noae
TfTLE: Studv of the effect ~~jf various factors on the grolvill of sHicoll carbWe el'.y.9t a Is
rPaper present~,d Lit (he Third Conference Growin,~-, MeMY-fl) M-666b-,,~; IS to
SOURCE: AN SSSR. instihit kristallogra-M. Rost kristallov, v. G, 19657 1,99-2,02
I'OPIC TAGS: silicon carbide, crystal -irrmvintr
A U
BSTPIXT: A hi-P-temperaLurc unit the clesipm of%vhich is described vvals built for sWdy-
Ilig the -f-rrowth of SiC crystals. Particular attention w~,.s given to the Audy of the thermai
field in the crucible in, order to produce the optimum temporat-ure distribution. The
optimunn mattern obtained for the thermal field in the crucible is shovvn in Fig. I. SiC
Crystals were gro""m with the temperature of the heater at 2450C.
Card 1/3

ACC NR: AT6002250
Z.1 2 Vill* I
Fig. 1. Opti)ijum pattern of tjyjejmnal field
in crucible,
The OPLMUM super saturation of the vapor above the growing crystals was calculated to
be about 2%. The formation of nucleation cente rs can take place at supersaturations, of
Card 2/3

ACC 'N'R: AT6002250
of 25 to 50';-,,. X-ray structural analysis showed that SiC crvstals of t--vo polyt~q)ic forms
under those conclitions: the 611 modification at temperatures not above 214.50C, and
the fill mcKiirication at high.or ternperatures. A -mixt-ure of 61-1 and 15R
is obtained if the tumpull'ature fluctuates. The of flhu crystals varies with the
ternpcraturr-' at v"hii-Ai they are grown, o%-, Ing to the changing solubility of impurities,
articularly nitrogen, In SiC. Orig. art has: 3 figures arid .1 for-a"Was.
none/ ORM REF. 001/ OTH REF: 00"
SUB CODE. ?0/ SUB&I'DATE:

L 25460-66 EWT(I)/E~VT(m)/ETC(f)/EWG(m)/EWP(e) IJP(c) ATAVH1JD1JG
ACC NR, AP6ooq6ql SOURCE CODE: UR/018_1/66/008/003/0 0951
AUTHOR: Kallnin, A.A.; Tairav Yu. M.; Yas1kov, D. A.
ORG: Leningrad Electrotechnical Institute im. V. I. Ullya ov-Lenin (Leningradskiy
elektroteldmicheskiy institut)
TITLE: Luminescence of silicon carbide with beryll impurity
- )-I L-'7
SOURCE: Fizika tverdQb-tela, v. 81 no- 3. 1966, 948-951
TOPIC TAGS: silicon carbide, beryllium, semiconductor impurity, luminescence, lumi-
nescence center, activated crystal, pn junction, volt ampere characteristic, electro-
luminescence
ABSTRACT: The purpose of the investigation was to confirm\experimentally that it is
possible to use certain elements of group II as luminescenc\e activators i silicon
carbide crystals. Some of the advantages of using beryllium as the doping impurity
are briefly discussed. Luminescent p-n junctions were produced by introducing beryl-
CM 3 6 - -,
lium in silicon carbide containing 8 x 1017 -5 x 1018 7 nitrogen as the lumine'
cence coactivator. The procedure and apparatus for preparing the junctions are br
ly described. The resultant junctions had a volt-ampere characteristic featuring a
large drop in the forward direction. In addition to the volt-ampere characteristic.,
the electroluminescence spectrRand the lumen-ampere characteristics of the junction
are presented. The results show that the electroluminescence of the obtained p-n
junctions cannot be connected with the presence of boron, and can be attributed to
Card

ACC NRi A16009691 0
the activating action of beryllium in the silicon carbide. Evidence in favor of the
foregoing statement is presented. Orig. art. has: 4 figures.*
SUB CODE: 20/ SUBM DATE: 2OJun65/ ORIG REF: 0031 OTH MW: 0014
Card 2/2

L 340h4-66 EWT (1)/EWr (m)/T/EWP(t) /En IJP(c) JD/GG/GD
_~C_C41 AT6013568 (/0 SOURCE CODE: UR/0000/65/000/000/0309/0314
AUTHOR: kichugin. I -R,; Sqirnova - Yaslkov, D. A.
A ; T~Irov, Yu. N..
ORG: L-eningrad Clectrotechnical Institute -im., Ullyanov,(Leningradskiy elektrotekhni-
cheskiy institut) 1_5_'/
TIT1X: The effect of certain factors on growth and formation of SiC crystals
- 7~7 -I.-/
SOURCE: AN UkrSSR. Institut problem materialovedeniya. Vysokotemperaturnyye neorga-
nichesklydacyadinenlya (High temperature inorganic compounds). Kiev, Naukova dumka,
1965, 309-314
TOPIC T~GS: silicon carbide, single crystal growth,=*i=8**= crystal growing
ABSTRACT: The growing process of SiC_2nLzLtals was studied in the 23500- 5000C range in
an argon atmosphere. Before sublimation, the SiC raw material was degassed at 2000C
and 1-10-S mm Hg. The crystal growing duration was 6-12 hours. Best quality SiC crys-.
tals were obtained using a two-diaphragm crucible. The distance between diaphragms
could be varied from 0.5 to 6 mm. It was found thnt the optimum conditions for growing
high quality, homogeneous SIC crystals 6-8 mm in diameter (with an average defect den-
sity of 200 cm-2 and with a large proportion of crystals with defect density less than
!30 cm_Z) are: an axial and radial temperature variation in the crucible maximum '500C,
Iheating from 200010C to the desired process temperature at a rate not lower than 200/
V2

L 0991['-67 Z-~-m Oll) /L'WPWA,'r1 - ITV(0 Ji)/jG
ACC NRi AP6033560 SOURCE CODE: Ult/0181/66/008/010/2982/2985
AUTHOR: Kal1_n_in_&._A. ; PasyAkov,_ V. V. ; Tairov, Yu. M. Yas1kov, D. A.
ORG: Leningrad Electrotechnical Institute im. V. 1. Ully.~nov (Lenin) (Leningrad-
i skiy electroteklinicheskiy institut)
TITLE: Photoluminescence of silicon carbide containing a bf~~lium~ impurity
7
SOURCE: Fizika tverdogo tela, v. 8, no, 10, 1966, 2982-2985
roPiC TAGS: photoluminescence, silicon carbide, beryllium, impurity.
luminescence extinction, electron hole, luminescence
ABSTRACT: Beryllium when added to silicon carbide is shown to render the latter
luminescent. Both electron- and p-type silicon carbide samples were found to
luminesce. At the same time, the spectral radiation composition was found to vary.
The activation energy required for the extinction of luminescence for electron- and
p-type silicon carbide samples is about the same (approximately 0. 32 ev). Electro-
luminescent light sources were prepared in which electrons were injected into
luminescent p-type silicon carbide samples. Orig. art. has: 3 figures. [Authors'
abstract)
ST,JB CODE: 20./SUBM DATE: 16Mar66/ORIG REF: 005/OTH REF: 006/

TA 'i I . 1! i ! '-.!. L. ! .
IfTh-e -7colo:,-,- o' t~--- .-.~iuatic Tha3es of the Yellow Fever "llosquitoe (Ae,-ies Ae~~,fyti L.)II,
- 1.
7-araz. i I~araz. 3,olez., 101. 7,, No. 3, pp 237-47, 1948.

US3R/Z--)oPara5tifjlo,-Y - Mites and Insects as Disease. Vectors. G -3
Ab s Jour Ref 7diur - Biol., No 10, 1958, 43448
Author Talrova, A.I.
Inr,t
Title Survival of Mosquit.-ics J'wopheles Maculiponnis up to t,ic
Enidemiolo3ically Daar~erous AL;c in the Re(~ioii of Stalinir-
sk.
Orig Pub Byul. N.-i. in-t rnlyarii i mcf,.. parazitol. GruzSSR., 1956,
No 2, (26), 50-56.
Abstract The clirnate, breedinG places, phenolo,-Acal data, seasonal
course of numbers, and (lifferences of A. maculiperiis
population in the eavirons of Liaklivi-Iorsk mountaill-
plain landscape. Fena-les o,-,' epic-'emialogically danGerous
a7,c are found here beCinnin- in the second half of June.
'Meir rAximum number is noted at the end of June. The
winteriiiG fewles live until the sporogonic cycle is com-
pleted but, because of their small number, they are not of
Card 1/2

TALROV.A. A. I.
Dotermining the time between the departure of A.maculipennis from
daytime haunts after digesting blood arii the next bloodsucking.
C,
Med.paraz. i paraz.bol.suDplement to no.1:32-33 '5?. (MIRA 11:1)
1. Iz entomologicheskogo otdeleniya Instituta malyarit I meditsinskoy
?arazitologit imeni B.S.Virsaladze Kinisterstva zdravookhraneniya
Gruzinskoy SSR.
(MOSqUITOES AS WIRRIERS OF DISEUSE)

TA DI OVA, A. I.
Occurrence of Anopheles bifurcatus in bodies of rain water. Ned.
praz. i paraz.bol. 27 no.1:68-69 Ja-F '58. (MMA 11:4)
1. Iz entomologicheskogo otdeleniya Instituta malyarii i meditsin-
skoy parazitologii imeni S.S.Virsaladze Ministerstva zdravookhrane-
niya Gruzinskoy SSR (dir. instituta - prof. G.K.Karuashvili, zav.
otd.eleniyem - prof. G.I.Kenchaveli)
(MOSQUITOES)

ORLOV, Sergey Pantelaymonovich; TAIROVA, A.L., red.; CILORNOVA, Z.I.,
tekhn.red.
[Batch measuring devices] Doziinjiushchie ustroistva. Izd.2-e,
parer. i dop. Moskva, Gos.nauchno-tekhn.izd-vo mashinostroit.
lit-ry, 1960. 237 P. (MIRA 13:10)
(Measuring instruments)

POLYAKOV, Z.A.; TAIROVA, A.V.
-1 , - ~ I , -~ n~-- .
Methods for determining scheduled costs of drilling operations.
Azerb.naft.khoz. 35 no.2:29-31 7 '56. (MLRA 9:10)
(Oil well drilling--Prices)

6/1 -16/6 2/005/0,V'1/001/C) 11
j23-1/j304
'-!anoylov, V.Ye. and Tairova, D-1.
JAcctrostatic fucusing of electron beams by electrets
Pe"UODICAL. 1-ustiya vysshikh uchebnykh zavedbniy. Priborostroyeniye,
v. 5, no. 1, 1962, 3-8
r -, A. short description of the properties of elecLrets is given. use
Of C1CCtr'Q-L diSC,; %ViLh an opening in the center is studied; such a disc
is found to bo ~,nalol-ous to an ordinary electros'atic lens. It is stated
that ap proxiniate, t1woretical CalCUliltiOnS S1101.7 LlIaL a set Of CICCLrCt discs
wit!l 'IlLeriiating polarity could conduct srable electron beans up to several
amperes. iL was found by experiments that clectrets made of cermi-c ma-
'M 1
teria I 1-150 calciu t tanate with an admixture of zirconium dioxide)
ar(.- t1w most suitable fox- focusing purposes. 'i.N. Gubkin is mentioned for
Lions in the field. There are 5 fi-w-es and 3 references:
ais Coatribu C, -
1 Soviet-bloc and 2 non-Sovict-bloc. The references to the En,r1ish-language
C~
publications read as follows: M. Eguchi, On the permanent rlectret. Phil.
1/2

6/1-16/62/005/001/001/Cll
Electrostatic focll~,ing of ...
Mag., 1925, 49, 176; 13. Gross, L.F. Jenard, On permanent charges in solid
C,
dielectrics, Phys.Rev. 19,15, 6711 8, 253-259.
ASSOCIATION: Leningradskiy elektroteklinicheskiy institut im. V.I. Ullyan-
()VLI (Leninix) Meningrad Institute of Electrical engineering
im. ~. 1. Ullyanov (Leitin)
SU61MITTED: July ~!G, 1961
,.. ird 2/2

ACUS510N NH: AW13538 S/0181/64/006/002/0642/0644
XYPEORS: Kharlamova, To Yeoj Tairova., Do A.
TITLE: The effect of radioactive radiation on the properties of silicon carbide
;~--n junctions
SOU'LICE: Flizilta tuvc-rdogo tela,, v. 6., no. 2, 1964, 6112-61t4
TOPIC TAGS.: radioactive radiation, silicon carbide, p n junction, volt az%pere
cilaracteristic, transitional photoelectric effect, photosensitivity, iinpurity,
i1-.!,)urity concentration
with impurity concentrations on the order of ~-lol7cra!f. The p-n junctions were
prepared by a technique previously described by T. Ye. Kharlamova (Izv. U-TI im.
V. I. Ullyanova (Lenina), vy*p. XLIII, 135s 1960; and To Ye, Kharlamova, Go F.
Kholuyanov-Fff, 2, 426., 1960). Each crystal was cut into two plates, only one
bein,; exposed to radiation for cmtrcl.
Radiation, varied from 3000 to 28 000
roentgens seomed to effect only inal.-g-nificantly quantitative changes in
the characteristics of the p-n junctions in SiG. Radiation of all p-n junctions
A3-'3FKX',T: Th,3 authors used electron-type samples of S (with alpha modification)
Card

X;L;r;-iS1Oi4 NR: API!,113538
by Laimaa rays or beta quanta produced definite patterns of changes in the volt-
ampere characteristics. These patterns are shown in Fig. 1. in the Snelosure.
Uxed radiation led to the appearance of a transitional photoelectric effect. The
~-,-n Junctions in SiC after such irradiation become sensitive to the visible part
0. t~e spectrwn. The photosensitivity of the p-n junctions was shifted tcward
the lonE;er wavelengths. This shift may be due to metastable energy levels in
tl,e SiC due to the action or gamma rays plus neutrons. Orig. art. has: 1 figure.
ASSOCIATION: Leningradskiy e1ektrotekhrLicheskiy institut in. V.. 1. Ullyanova-
Lenina (Leningrad Institute of Electrical Engineering)
t~M-2*-7--'E)i Avvel)63 DATS ACQ: 03Mar64 ZWL: 01
SJB CODEs PH NO REF SOVt 006 OTHER: 001
carj
Eli=

ACCESSION NR: AP4043345
S/0181/64/006/008/2301/2306
AUTHORS: Bogoroditskiy, N. P.; Tairovap D. A.; Sorokin, V. S.
TITLE: Role of free carriers in the formation of the electret state
in polycrystalline dielectrics
SOURCE: Fizika tverdogo tela, v. 6, no. 8, 1964, 2301-2306
TOPIC TAGS: barium titanate, polycrystal, electret, dielectric
material, ceramic dielectric, polarization, energy level
ABSTRACT: To explain the formation of the electret state in non-
polar materialsit--an investigation was made of several phenomena
occurring in ceramic materials polarized in a field of high inten-
sity and at high temperature. The materials investigated were T-1700
(the fundamental crystalline phase of BaTiO3), Sm-1 (BaTiO3), T-150
(CaTiO3), T-80 (TiO2 and T-900 (SrTiO3 all with different elec-
Card i 1/3

ACCESSION NR: AP4043345
tric properties. The materials were in the form of discs 33 mm in
diameter and 3~mm thick; the electric field intensity, the maximum
temperature, and the time of exposure to the field were variable.
The magnitude and sign of the surface charge were measured by the
electrostatic induction method. The role of the free carriers in
the formation of a stable homogeneous charge of ceramic electrets
was investigated. The dependence of the coloring of the samples
on the magnitude of the polarizing field, maximum temperature, and
polarization time was studied, with particular attention to the
double coloring of some of the materials (T-1700 and SM-1), which is
found to be due to the injection of electrons and holes from the
electrodes into the dielectric with subsequent localization on
Schottky defects. A new model of the electret state in nonpolar
dielectrics is formulated. According to this model, the homogeneous
charge is produced and exists independently of the presence of polar
groups in the dielectrics, which depends on the technological polar-
,ization factors and on the surface properties such as concentration
Card 2/3

ACCESSION NRt AP40433 45
and depth of local levels. This homogeneous charge forms a residual
field having the same direction as the external polarizing field.
The field of the homogeneous charges tends to maintain the polariza-
tion effects produced by all other polarization mechanisms. Orig.
art. has: 1 figure and 2 tables.
ASSOCIATION: Leningradskiy elektrotekhnicheskiy institut im. V. I.
Ul'yanova-Lenina (Leningrad Electrotechnical Institute)
SUBMITTEDs IlFeb64 ENCLs 00
SUB CODE: SSIFM NR REP SOVt 001 OTHERa 001
Card 3/3

TAIROVA, T.A., dotsent.
- ,
Methods o~' (-.,impluting -,-ts lift on thm bqsis of ~iqta in dle~-p
lifts. Trudy A!~erb.tnd.iist. no.9:42-64 154. (I-qlaA 9.10)
(Oil wells--Gqr, lift)

TA I IIOV A T,
Matter of great national im-iortance. Sov.nrofSoiuz-- 3 no.8:27-
2q Ag'55. (Yw-A. 5: 10)
1. Predsedatell Azerbaydzhanskogo res-Dublikanskogo soveta prof-
Soyuzov
(Azerbaijan--Agricultural machinery industry)

ALIKHANC~V, E.N.; AIRUSHANCV, N.A.; AKHUNDCV, V.1u.; ALIZADE, M.A.; AZIZB*T.OV,
A L
Sh.A.; BAGIRCV, W;ZIXV) S.A.; VOLOBUYEV, V.R.; VEKT LCVY F.M.;
'~UKHNOVY O.M.; GUSE'-"!,"(-V, I.'%.: DOASEEV, K.K.;
ZIE -,r--V, M. A.;
DADASHZADE, M.A.; DALIN, M.A.; JS-E?jD:_:RC.77, M.I.;
KARAYEV, A.I.; KASRKAY, M.S.; KELIDYSH, M.V.; KERIM01, A.G.;
LEMBERANS~`IY, A.D.; MAMEDCV, G.K.; MEY"ITIYEV, M.R.; MIRWYEV, S.A.;
NAGIYEV, M.F.; NASRULLAYEV, N.I.; OGUDZHEV, A.K.; RADKIABOV, R.A.;
RUDNEV, K.N.; SADYKHOV, R.N.; SE~ENOV, N.N.; TOPCHIYEV, A.V.;
TOPCHIBASHFV, M.A.; jAjROYJL,-T-A.; KHALILOV, Z.I.; EFENDIYEV,
G.Kh.; SIIUKYUROVA, Z.Z.
IlJsif Geidarovich Mamediliev. Azerb.khim.zhur. no.u:5-6 161.
(MIRA 15:5)
(Mmede-liev, IUsif Geidarovich, 1905-1961)

V
E Fit 1 ~V
'Y" 1L
1,1 UOV G.1 YF i: H
"Ar-~IYEV, ORK D V
:zu D, i!-.If
G.hh.;
,I P~ Fj , T ~ 'l
R)P-
. L
SFUi
iusif Geidarovicl, Olt ok] iN, z e r',--
23 1 n( 1.~ 2
-112
o (Miamedal-Lev, Iusif

7~~ZIROV, S.A.,- TAIROVA, T.A.
Powerful tOOL in the strug.-le for technical progress; fortieth
anniversary of "Azarbaidzhanskoe neftianoe khoziaistvo." Azerb.
neft.khoz. 40 no.12:6-8 D 161. (MIRA 111:8)
(Azarbaijan-Petroleum-Periodicals)

I i.X110 , - , Il c , C 'I, , - ", . . - : -, ~.; C.-: I ~ - I
VFZ7-RO M' RO'V
ba am e 3 Of! 5 E Q n 'u

Jo: L!:

TAIRjVA, T. K.
Tairova, T. K. "The hydrolysis of the in,ilin compleT in Jerusalem artichoke
Jtdce", Ukr. khim. zhurm-tl, vol. XIV, Is-ine 2, 1949, P. 73-77, - Bibliog;
8 items.
SO: U-4392, 19 Au-Ust 53, (Letopis 'Zhurnal 'n:rkh Statey, No2l, 1949).
I T-7- 7-1 ZI -1 --., .. - -. .-_

TAIROVA, T. K.
Tairova, T. K. "The separation of friletose from Jerusnlem artichoke juico
in the fqrm of alcium fructosf~,e", Uke. k-him. zhtzrr 1, Vol.M. Issue 2,
1949, P. 79~-91.
SO, U-43w. 1g AuAlust 53, (Letoois 'ZhurnRl 'nykh Statey, No 21, 1949).

TAIRJVA, T. K.
Tairova, '2. K, "E-,merience In wurlfyinx, dahlia juices with organolytes",
(Obtaining irsuli~) , U`:cr. khim. zhurral, Vol, XIV, Iss--le 2, 19;-g, p. 90-q2.
SO: U-4392, 19 August 53, (Letopis 'Zhurrml 'nykh Statey, No 21, 1949).

TAIROVA, V. G.
Complexes of sections of closed Riemannian surfaces of zero
order. Izv. vys. ucheb. zav.; mat. no.4-155-i6o 162.
(MIRA 15:10)
1. Uzhgorodskiy gosudarstvennyy universitet,
(Riemann surfaces)

62,
ZhCU, Z

~ ~,;,: ~ ; , , , ..": ~ I .1i.
:1, "!, ;,' : , ~, j" -.~! It ~ `.I .' (',!' r.; "., ..-i
I I , ~ ~. - .", iv-.
..:: t'. q'. 1. .7,11, 1, 1 ~.'! , , 't
. ~ . I . ;P ~. " .: ! -.;I o I t, "
, , 6 .
(.1;~~ ., '. -",!

MAKSINiOVICH, Nlikhail Makbaylovich, cioktor sellkhoz. nauk, prof.;
TAIROVA, V'li'l red.., SOKOLOITA, N.N. tekhr.. red.
- - 11
[G--ow-Lng early potatoes] Kul7tura rw-mego kartofelia. Mosl-va,
Sellkliozizdat, 10,622. 165 P. (MIRA 15: 7)
(Potatoes)

RAKA110, I,L,,~ KONM3A'Y'YEVA, A~V;4 'IIAI:~CIVA, VJI :, rod,,; lhVTOUNIA,
0,N_ tek-hp, red,
[Increasing the pr ductivity of vegetable seeds) Furshe e
0 y ni
prodU-ti,,rnosti semian ovoshclirWkh hdltur Moskva, Seltkhoz-
izda'u. 1962. 197 p, (MIRA 15-6)
(Vegetables) (Seeds)

71

, s. I l"Li '', ZO - :;I ii"'Z. (lau It ;A, % N' - p ""d . ; DEYFV A,
SOKOL, - - - .
[Pota-.o s~~crage] Khranenie l*.,-ajtofe-Lia. jz~,;.2.y i!3Pr- i
- -1 11 . . ~ I t~3. 255 P.
dc, ~ 1 . Z,- ~.:hozlzQp,) 19 i, RA 17: 2)
1 0a

GUSEV, 1%.I., kand. sellkl-,cz. n--uk; TAIROVA, red.; ~'AKROVA,
, ~..,
I . -
Ii . N. . , t akhm . r e d . : 0 K. 0 IE L C,.1 .., tie-khr. red.
[Fertilizing vegetable crops] Udobrenie ovoshchnykh kulltur.
Noskva, Sellkhozizdat, 1963. 503 p. (I-MiA 17: 1)

r
PJ
Ko c.
hn(

K I ~~,F LOi, ~,ennadiy rauk,
red.; FJjYAZEV, fiI.A., red.; VOROi~'Y-V, D.I.'., red.;
LECJ"O~'TCI~j, '.1j. kand. arkhft. -a--'-, rec'..
- u .9 __ U.:_ LD
red. ZAIaOVA,
[F-Ior-iculturel TSvetovodstvo. Izd.3., ispr. J_ dopp. Mo-
ckmt, 12.d-vo "Kolos," 1964. 983 p. C L-~A 17:8)
1. Stars-iy sadovod ,.ot'-Inic lie sko -ro sada i3otanI- -liskogo in-
stituta im. V.L.Komarova (for Knyazev). 2. St,~_-shi- saAo-
vod Tresta ob"yed-Inenno,-o _~adovodstva (for Vorob yev, Riga).
3. Direktor teklmikuma zeiero~zo stroitelistva, Kharlkov (for
Leortovich).

ILIIN, V.F., kand. sellkhoz. nauk; TAIROVAIIV.14,, red,
[Experience of potato farrmers-' Opyt kartcfelevodov;
I L, t L, I
sbornik statei. Mosl-va, Kolos, 10,65. IK P.
(M!'U- 18: 7)

V A
c; Orens
Fri

P
N.A.
UnImown Materials On A_14. i1jJ354-1929). one of the
first Azerbai '-iani physicians. Dokl. AN Azerb. SSR 18 no.12:
81-87 162. (MIRA 16:11)
1. Muzey istori4 Azerlmqd~Lhana. Predsr-avlerio aki--demikom AN
AzerSSR A.S. "u.-mb-,:,ade.

KAH~';KA,. Zorit; I'AISL, Utd4slav
'I
I-ew .4rzterma,.4anai decimal classification in geodesy,
photogrammetr~f and cartography. Geod kar-u obzor 1C
no.5:107-108 MY'64.
1. Branch Center of Scientific., Technological, and
Fconomic Information and Propaganda, Research Institute
of Geodesy, Topography and Cartography, Prague.

TAITS, A.i.., V-tnd.l-;lhn.nnuk
All-Union scientific and tocInnical c-~nfer;~i,ca c~:-,
eqn',pment of ritnos rtrd explosdon-hazarilnus rooms nnn' in-'tlklbLtAc~ns.
Prnm. Prfl~g, 13 no-8:14-37 Ag 159. Ofm.'u, ll.:10
(Electricity in
,inearing-Safety
(Electric nr4,

w- - w-
a 0 a a 9 0 0 0 4 0 a 0 0 0 0
4 x I, J7 n .1
A I. L LI L A 4 L L A P P 1, A I T of I AA 00 w It

carrent-density Tsuistion4 in the nj MAK -00
ne%ium from carnallite A Nil. Lon, 4
to. 14 It., It-m -00
if twf -~j -,I, 't-, ,.,I I fit, ,, - fl.. 0
Rm I.... .....

-00

-0 0

400
00
p _-00
vi
! -00
0 400
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'
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it (L.WFICIVIn. too 0

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ff I If It
t 0( W13 n 1 1.
P
91 rt
71
I
0
0
TO:O : *0 : : :110~ : : : : : 40

TALIZS, A.Ii~.
RT-780 (Failure of graphite electrodes in magnesium bath) Razrushenie grafitovykh elektracbv
v magnitnoi vanne.
TSVETITYE METkLLY, 13(5): 71-76) 1938.

, 6 0 0 0 a 0 0 0 4 6 a 9 a 0-9
0
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ADDIT-ON C
F BARRIf AND CALCIM CHWEIDES IN THI ILZC-
twivals of (used molurvium chloride-% X".. I mt , aI
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u ing its' statt iiagmion i is
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IX I

v: 'DI-Ii, and TAIT:-,.
Sra,~:nenie revilltatov isnvtaniii plati s-,mol-~tw: v trillop i -v T~ol,~te.
1"3r,,, no. 21;:,
!~urrrt=v in English.
Title 'Ir. : Cormarative results o~-'Lainerl winl tumn~-l and flight tests
nf five airplanes.
eroqa-t-~cal ~cie- ces a-d Aviat4-on in th- S,?viet Uninn, of

sn- - nole~e. 1. -,,udv, lclc~
-t-11-.-a -rlr~-dnipn. a noliar mol~ta
TI f1p f r. o~' .dotti!Ir the oolar diaf-,TRvi r%n ar atrrlane in fliFh'.
no.
~.(,rona-.Ailca-; 'c'encns and Avi~tion in the Sci-L-t ~.'nion, Lilbrii-y of
cc C~

X
TAITSP M. A., and V. S. VEDROV.
Letnye ispytaniia samoletov. Dopushcheno v kachestve uchebnogo
posobiia dlia aviatsionnykh vuzov. Moskva, Oborongia, 1561. 483 P.,
tables, diagrs.
Bibliography: p. 478.
Title tr.: Flight tests of aircraft. Approved as a textbook for
schools of advanced aeronautical studies.
TL710338
SO: Aeronautical Sciences and Aviation in the Soviet Union, Library of
Congress, 1955.

Tz'd7--~, N. Tu.
Aathor; Taits, N, lu.
Title: The technology of steel heatinp.. (TeWIL110logilanagreva stalli.)
City.- Moscow
Publisher. State Scientific and. Technical Publicatioa pertaiting to
the crude and chromium metp-IlurWi
Date-, 1950
.twailabla; Library of Congress
Source: Monthly List of Bussian Accessions, Vol. 11. go. 1, -p. 29

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