SCIENTIFIC ABSTRACT KHANSEVAROV, R.YN. - KHANUKAYEV, A.N.

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December 31, 1967
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SCIENTIFIC ABSTRACT
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1q 96 rA a 0; Ir. 10 o- ft ~w .0, lag 3 o i F6 41 3 - q o. *14 -ft. r 0 PKM V. 0 n 0 to 0 C 13 1 11 1 -, p hel -j OM J, 0. E o 4 4-,-. o0 ".5o a C6 "-w -.0 ~7' 4 4 o "o 39 o1 0 . . . . . . . . 14 0 .0 13" up 0 -tit .0" tt o r 0" a o CIO, 89297 S/181/61/003/001/036/042 B102/B204 I, Yl 77 AUTHORS: Ryvkin, So Me, Paritskiyj L. Go, Khansevarov, Re Yu., and Yaroshetskiy, 1. Do TITLE: Investigation of the kinetics of impurity photoconductivity for the purpose of determining the parameters of local levels PERIODICAL: Fizika tverdogo tela, V. 3, no. 1, 1961t 252-266 TEXT: An investigation of impurity photoconductivity is not only of interest in principle, but is also of practical importance for studying the local electron states in the forbidden band and especially of its interaction with exciting radiation. Apart from an earlier paper by the authors, relaxation processes of impurity photoconductivity have hitherto not beer. investigated in detaill this was, however, the aim of the present voluminous paper. The authors set themselves the task of investigating theoretically the most important cases of photocurrent relaxation during excitation in the impurity region. The rules governing the kinetics of impurity photoconductivity have certain peculiar features as is shown Card 1/8 B11811611003100110361042 Investigation of the kinetics of... B102/B204 here, due to which impurity photoconductivity relaxatior differs essentially from that of intrinsic photoconductivity. An exact analysis of these rules Bhows that an experimental investigation of the kinetics of impurity photoconductivity may serve the purpose of determining various parameters of impurity centers as, eog.9 the photon capture cross section, the trapping cross section for free carriers, as well as the energy position of the impurity level in the forbidden bandt the concentration of centers and the degree of their completion. In part I of this paper. the most important rules of the kinetics of impurity photoconductivity in the excitation of carriers for one type of local centers are dealt with. This is done on the basis of an example of a semiconduitor, in whose forbidden band there is a sort of local level with concentration M; these levels are assumed to be in the upper half of the band, so that they are in heat exchange with the conduction band. This semiconductor is irradiated witl- monochromatic light of such a wavelength that only electrons pass from the local levels onto the conduction band, and that monopolar impurity photoconductivity occurs. The equation of motion (13) d An/dt - (m 0- an)qJ n(N cM+M-M O+n 0+,dn) Card 2/8 S/181/61/003/001/03$/042, Investigation of the kinetics of.., B102/B204 is set up, where q is the capture croes section of an electron on the M-level for a photonj m - mb- Am is the electron concentration on the level MI I is the redombination coefficient; J is the light intensity; n=n,+ 6n.is the electron* oonGentration in the conduction band; no is the dark'concentration of the electrons; Nctj is the effective state density in the conduntion bandf-and. Am - An. The solution in the case of excitation. by square light pulses is, for the case of growth (switching on o,f light), given by '%nm.=Ath(jAt-t-B)-C, (1, 6~ rAC 2C A B=-11n ~C- -#7 MO 2 C 7 (N,.v -i- Min -I- n' -4- and for switching off Card 3 a z:;'.~ W-1 F S/I 8116110031001103 61042 Investigation.of the kinetics. Of.'. 3102/B204 4n 4i~p, (1.7) I Jan. I.. I xp (N,~r M M n 0). and the steady concentration of non-equilibrium carriers is given by jr4-Af -ntO-+-nO-I-- X. 4mql Uj M 4-,n 0 9 For low light intensities, .6 n m qJ/Y(N +M,.m +n and f or high at 0 at 0 a intensitiest '~L n mo* The equation of motion is solved also under Card .4/8., 8Y.297: 'S/1-81/61/003/001/036/042 Investigation of the kinetics of.,# B102/B204 conditions and for different special oases' and expressions are derived for the relaxation times. The dependence of relaxatiq&.times on light intensity is investigated, a~eexplioit forjulas 4re derived,for q., In part 2 of this paper, of a cons.tant-expo~ure in the impurit" Y region upon the kinetics of* u imp rity. photwonductivity 'is investigated. (1-3) acquires the form- d-in n,)qAj-TAn X qjO ~X _f M-M -4-n --t- 2n An --t- --1- qAj (2.1) 0 where J is the intensity of constant exposure, 6, Jthe amplitude of the 0 square light pulse, and nj the steady carrier concentration in the 0 rop, steady) have the form conduction band. The,solutions (growth, d 6nH . 6n a t 11 0 XP t/,ru)] An, 6nstexp(-t/,r,); and Card 5/6 89297 8/181/61/003/001/036/042 Investigation of the kinetics off4f B102/B204 (2.13) An m ri,,)q AJTT For 7 st 0-1 0 H n -1- nj '0 - ni.- = - n M. is obtained. In part 3 of this paper, the effect of constant exposure within the region of intrinsic absorption upon the relaxation of impurity photoconductivity is invoutfgated. This is done on the basis of a simple example of "absolute adhesion levels" (levels for which the trapping cross' sections for carriers of one kind vanish) for short-wave exposure of intensity I,.which conveys electrons from the valence band into the conduction band; electron-hole recombination ian carried out over the level S. Hero, the most simple case of monopolar electronic intrinsic photoconductivity in linear recombination of free electrons is investigated. The kinetics of the electron transitions is described by the system Pkj In (M in) -i- TmNM -I- qInj- (3. 1) dM Tn (M - in) - 7mNm - (3.2) qmj, Card 6/6 HO 9 1 v! g Z S1181V611003100110361042 Investigation of the kinetics 0f.00 B102/B204 where in the quantum yield of the intrinsic effect, k the absorption coefficient in the intrAnsiq region', whose solution for,switc.hing tn long-wave light is giveh.,by 9MOAj An exp (3-9) rAe q. rl. qAj 4 TS and for switching off-long-wave light by Card 7/8 3/18 1161100 3/001/0 3 6104 2 Investigationof the kinetics of B102/B204 - (3.10) exp (rf)], An Z~Iexp (.L -I- all T71 2 The course of the relaxation curves is discussed in detail. The authors thank Yu. A. Zibuto for help in calculations. There are 11 figures and 8 5 Soviet-bloc and 3 non-Soviet-bloc. _J, references, ASSOCLWION: Loningradakiy fiziuo-tekhnicheskiy institut AN SSSR imeni - A. F. Ioffe (Leningrad Institute of Physics and akad, Technology of the AS USSR imeni Academician A. F. loffe) SUBMITTED-. July 1 1960 Card 13/8 T;1 RYVKIN, S.M.; KRANSEVAIM, R.Yu.; YAROSIIVISKIY, I.D. Impurity photoconductivity in germanium irradiated by gamma- quanta. Fiz.tver.tela 3 no.10:3211-3219 0 ;61. (14M 14:10) 1. Fiziko-tekhnicheskiy inBtitut imeni Ioffe AN SSSR Leningrad. (Semiconductors, Effect of radiation on~ L 19568-63 EWP(q)/EWT(m)/EW~(B)/BDS A1Fj 09/2704/2706 11;~ 0 T 'YO05 ACCESSION NR: AP3007517 S/ 1C1e3 J?O AUTHOR: Khansevarov, R, Yu.' TITLE: Investigation of impurity conductivity in germanium ix radiated with fast electrons 7 .SOURCE: Fizika tverdogo tala,.v. 5, noq 9, 1963,.2704-2706 TOPIC TAGSi irradiation, radia.tion affect. radiation damage, impurity 1 photoconductivity, fast electron irradiation, irradiated germanium radiation defect, n.type germanium, ABSTRACT: An exp6t~mental study was conducted of impurity photo- conductivity in n-type Ge with an initial concentration no. - 2x165 cm-3I bombarded with 2-Mev electrons~ The degree of irradiation was such that the Fermi level was located sufficiently high above the Ft -0.2ov, level so that at the temperature at which measurements were made (80K), the Ec - 0.2'ev level was practically filled with eleccrons. It was-determined that when the Fermi'level lies between the Ec and t Ec - 0.2 ev levels,,the impurity phttoconductivity of Ge bombarded with-2-Nev electrons is of the same type-as that of Ge irradiated Cord 1/2 - S L 19568-0 ACCESSIQN NRj AP30 07517 with 2-kev *-rays. The kinetics of impurity photoconductivLty'La in .qu Alit tive agreement with previously developed theory (FTT, v. 3, 25Z, 1;61). The results of the paper cited were used to determine the,cross section for cip'ture of a photon (q) by an electron and the coeffir'.iont of recombination (Yn) of electrons for the Ec - 0.2 ev leveld It was found that for 0.3-ev photons q - 4-8xlO-16 cm-3 and, yn - 0425-1XIO-12 cm3sec-~.._ A- decrease in photo conduc ef-ifty' 'was observed in all of the"specimens. "The author thanks S. M. RY*vkjn_ for a tscussion of rJults and Y. D. Yaroshetski for,providing the speqLmens of irradiated Gee"'_Orige arts has: I figures and 1 table. ASSOCIATIPN: Fiziko-tekhnicheskiX instLtut im. A. F. Ioffe, AN SSSR, Leningrad (Physicotechnical Institute, AN SSSR) ISUBHITTED: 20Har63 DATE ACQ: 140ct63 ENCL: 00 ra a ti I urn -1 e a. irrsdiationj deLect level V,~ i~4 Ll-y I;Ll i Card 2 P Uiflm) E ACC NRt Al'6011352-1 GouRCECODE: bTo~01/66'Or;&O.' AU',7,iW: ~,,,Aohovets T. V.', Yhan6CVarOv,,R-YU- im. A. F. Joffe, AN SSSR, Leningrad (Fiziko- inrUt te All 55SR) I u !Ajw-temperature ganna Irradiation and annealing of indium antimonide z;oui~,C*E: Fizika tverdogo tela, v. 8, no. 6, 1966, 1690-1697 TOPIC 'D%GS: intliurn compouni, indium antimoni de , irradiation, annealing, resistivity, Hall constant, photoconductivity, radiation damage, crystal defect A;3STRACT: In YlLv or 'the acwcity of published data on the effectof gama ilTadittion on li0b, the auftrs irraRatal n-type InSb at 77ck (dose rate 2.4x1010 phot=An~e see) with WtLal electri ~proity 2.9 x V3- L6 xrP cri- 3 and p-type InSb with initial hole density 5.3 x 1013 - 3.3 x lo." CM-3. Tha resistivity, Hall constant, and the spectral distribution of the Iffiotoconductivity were measured before and during irradiation, and during the subsequent annealing. 71he test results are used to determine the rate of defect formation and the extremal positions of the Fcrmi. level as functions of the irradia- tion done. 'Ilip results indicate that the defects produced by irradiation act aa ionized scattering centers, and that the rate of defect formation is a rather com- plicated function of the Irradiation doge. Some hypotheses are adwmced concerning the enertnr level scheme of the irradiated indium antimonide. It is concluded that L ACC NR, A"1852-( ""here are sQveral :" ~ ? imultanemis . .... Of the radiati.or, -'Z( 11ctir1g lnechlnismg affecting the course of annealing carrier (ley),; j 41..y and tj~tt t,v rate of' t'his annealing depends on the initial defectn, in tho -er!'JeOrIdUctor. InvestiFation of the i-sochronous annealing of i .5001' thus indicaLi , Yielded results that agree with Publivhed data, _rq~ that thcne proccoves are governed by the main defeetn always produced after _frradiatjon. Two 1"els r. - 0-083 and FV + 0.048 ev, are credited to radia- tion defect[3 'Ind are classifie) authors tjijrj~,, d as donor and acceptor levelsy respectively. The and for inkirest, V. V. Galavunav-for supplying marW samples, _j4. ~y,L _tj ~jrja for help 'with the measurel~e--nf,-S.--br-l-bLrt--~b tables. go as: 7 figures and [02) SUB Coj)E., 20/ SUBM DASE. 16oct65/ ORIG REF1 007 OTH REF- 003/ AT-D P jj 1,;S : 5-- j :2 111 ACC N" AP7005205 systems of solid solutions, the initial components of which have d-Jiferent zonal structures, it was concluded that the zonal structure of solid solutions of the givenii system changes with alloy composition of 2CdTe- 3CuInTe2 and that the zonal structures of CdTe and CuInTe2 are different. Orig. art. has: 2 figures. [Authors' abstract] ANII SUB CODE: 11, 20/SUBM DATE: none/ORIG REF; 005/OTII REF: 002/ card 2/2- ACC NRI AP701314O soUtxE COE)T- U.V04491'67!00l 001/0141!0143 AUTHOR: Coryunova, N. A.; Tychina, I. I.; Mansevarov, R. Yu. ORG: Physico-technical Institute im. A. F., Ioffe, AN SSSR, Leningrad (Fiziko-teldinicheskiy institut AN SS.SR); Kiev State Pedagogical Institute In. A. M. Gor1kiy (Kiyevskly vosudarstvennyy podagogicheskly Institut) TITLE: Soma photoelectric properties of monocrystals of ?t-CdGeP sub 2 and p-ZnGeP sub 2 SOURCE: Mika I takhnika poluprovodnikov, v. 1, no. 1, 1967, 141-143 TOPIC TAGSI vapor pressure, photoeleetric propertyp germanium single cr.-stal, single crystal growing, IR photoconduotor SUB CODE: 20 ABSTRACT: The vapor?,pressur es.of aii three' components in the compounds tested" in this article diffeF sharply. This makes the technology of production of nionocrystals extremely.complex, which exilains the complete absence of informa- tion on the physical properties of these compounds in the literature. Using dual temperature systhpsis, the authors developed a technique for synthesizing these compounds_in c,onqideration of the pressure kinetics of the vapors in CQ,dl / 2 - --------------------- 0 ACC NR' AP7013140 an ampule. The CdW monocrystals were'produced-by directed Crystallization from a StOichiometric2 melt at constant temperature gradient. This same method was used to produce crystals alloyed with tin, germanium, gallium, arsenic, bismuth and indium. The ZnGeP from a melt-solution. 2 mOnOcrYstals were produced by crystallization The first measurments Of photoconductivity of these mOnOcrYstals showed that they have maximum Photosensitivity in the visible and near infrared areas, wjk*qh will Possibly determine the area of their practical Orig. art. hass I figure. VILIAKO, K.; IRkNGX, L. [116~e, L.1; KHOSON, Kh.ClIanson, H.]; LrfEM, X. [TZ5per, Blood changes in diphyllebothriasis. Mad. paraz. i paraz. bol. 27 no.4:494 JI-Ag '58. (KLEA 12:2) 1. 1% kafedry biokhimii (zav. kafedroy - prof. E. Martinson ) i is kafedry propedevtiki vnutrennikh bolezney (zav. kafedroy - dots. R. Raudam) Tartu- skogo gosudarstvannogo universitata. (TAPSWOM4 UIMTIONS, blood in, dipbyllobothriasis (Rae)) MGM. X. CkMrge, KJ, dotsent;,jKHIE3O![, Kh. (Hanson, H.), kand.ned.nauk Effect of soporifice on adrenal cortex function. Probl. endok. i gorm. 5 n0-3:39-42 mr-Je 159. (MIRA 12:9) 1. Xz kafedry falcul'tetakoy terapti Tartuskogo gosixiaretvennogo univerRitata (zav. - doteent K.Kyrgo). (TRIOPP21UL, eff . on 17-katosteroide & hydro-qcorticosteroide in urine (Rue)) (17-OTOSTIROIDS, in urine eff.of thiopental (Rua)) (AMI" CCRTZI HORMONES, In urine 17-hvdr~oxycorticosteroids, eff. of thiopental Ot%~S) -) RIYVY YaaYaep kandemed.nauk; KWSONP Kh.M. Use of dihydrochlorothiazide (hypothiazido). Vrach. dolo, no.l: 51-54 A 162. (MM 15t2) 1. Kafedra fakulltetskoy terapii i patologicheskoy fiziolggii (zav. - dotsent K.Kh.Kyrge) Tartuskogo universiteta i Tartuskaya g6rodskaya klinicheakaya bollnitsa. (THWIAZIM) (EDiXA) k I e P h 0 c) r-Y a r i o r, r v ABSTRACT! Experiments were performed for the Purnmao rif cnmrL42rlngr I n a e n n .1 a v i- k, r irradiation of rats by docza of 800 r, MIL~Chondrla of the h e I r a b t I t t v t o n e r o r m n i. I i a t ~rg AP -404," 7 9 Z Or- "IT T Tgomtrat*r*,;,*v nauchno-isaledovatellqkiv rentgencradiolo- a t x 4-1 1; 0 r t I q n F TZ o P n a 1 -4 i N--yrm-arm KIIIIINSO~11, 1~.P. Effect of whole-body X-ray irradiation on the proceases of conjugete oxidative phosphorylation and sor- mechanisns of t.ielr remilation in 1.1ver mltochondrJa of rats. Radiobiologila 5 no,I:L4-48 16 5. ("111RA 18:3) 1 TSentrallnyy nwichno-isaledovatel'skiy rentgeiio-radic,ioficneal(iy Institut I'linisterstra zdravookbrunenlya SSSRI Len-'rprad. AA. USSR/Fogineering - Induction heating Oard 1/1 Pub. 128 - 17/34 Authors Donskoyj, A. V.,, and lOiansuvarov, A. A. Title The induction heating with radio-frequency currents'of blanks for the forging azad stamping industry Periodical I Vest. mash.Al2,, 60-62.. Doc 1954 ILbstraot I The editorial gives some information concerning the experiment conducted by M. I. Nalininla Polytechnical Institute in Leningrad, in the field of induction heating of billets and blanks with radio frequonclee, A short description of tube-generatorso induction heating and the change in-range of heating temperatures is given. Five MSR references (1949-1953). Diagram; graphs. Institution I ......... Submitted ....... _'O 603248� SOURCE CODE: UR/o4l3/66/ooo/017/0030/0030 DfVENTOR: Alekseyev, F. A.; Balashov:' V. A.- Gerehonok. M. I.; Grachey. I. M.; -nits Yegorov, 9. A.; F.Obyl . _zl;~G F. A.% Lifshits. A tbndrus, D. B.4 kaya. Marshin, N. A.; Rashevskiy, A. L ; Rivkin, A. 3'.; Tal'gren, A._!. A. A. ORG: none TITLE: Device for high frequency ekdering oZ lead-acid' al -ies. Class 21, No. 185368 !52 SOURCE: Izobreteniya, proqrshlenn e obraztey, toyarnyye znaki, no. IT, 1966, 30 TOPIC TAGS: metal soldering, stor ge battery ri ABSTRACT: An Author Certificate has been issued for a device for high-frequency. soldering of lead-acid itorage batteries. The device containsan h-f generator vith an external tank circuit, a multiloop inductor with opon ferrite magnetic circuits, a conveyor with a lifting table, a control desk, and an assenblinS-soldoring former equipped with a magnetic screen fastened on a non-magnetic buse. Orig. art. hags I figure Card 1 /2 UDC: 621.352.2:621.- 191-.35T:621.3.- 029.5 Fig* 1o 1 - H-f generator; 2 external tank circultj 3 - Inductorl.4 - conveyorl 5 lifting tablel 6 - control deski 7-- formstj mareenj 9 b"e. SUB CODSI 10,13 SVBM. DATICo 24 Var 65 COrd 212 &'fn 110-4-14/25 AUTHORS: Donskcy, A.V., Doctor of Technical Sciences, Professor, Borok, A.M., Ivenskiy, G.V', and-Khansuvarov,A.A., Engineers. TITLE: A High-frequency Electro-thermal Installation of a New Series (Vysokochastotnaya elektrotermicheskaya ustanovka novoy serii) ifl FERIODICAL: Vestnik Elektropromyshlennosti, 1958,~No. 4. 'Di". 42 - 41/ bssi). ABSTRACT: High-frequency electro-thermal installations with valve generators for induction-heating are widely used. A mass- produced equipment has lacked anode voltage stabilisation and needs careful screening to reduce radio interference. A new series of equipment has been developed that operates at a frequency of 70 kc/s, so that both !he fundamental and the second harmonic are outside the standard frequency range for radio interference. This new equipment, type sin3-67, employs a stabilised anode-controller rectifier. The main technical data are given with a full-circuit diagram in Fig.1 and the 0 main components of the circuit are described: the rated output is 60 kW. The principles of the grid control system are des- cribed. A change of the grid voltage varies the firing angle of the valve. The main advantage of the circuit is its simplicity and although the accuracy cf stabilisation is less than that Cardl/2of existing circuits, it is nevertheless adequate. The equipment 110-4-14/25 A High-frequency Electro-thermal Installation of a. New Series includes protection against short-circuit, crerload and under- voltage. A general view of the equipment is given in Fig.2. It is housed in a number of separate cubicles, whose contents are described. A wide range of tests was made on the equipment; its character- istics are given in Irig-3. These curves show that the genera- tor can easily be adjusted to give the best operating conditions on the most varied loads. The oscillatory power ranges from 40 - 60 kW and the efficiency of the generator valve is 72 - ?8%. The power-factor depends or, the ignition angles of the thyratron and ranges from 0.72 - 0.93. During the tests careful measure- ments were made of radio-interference with the results plotted in Fig.4, which shows that interference is worst at light-loads but is still within the specified limits even when the cubicle doors are open. There are 4 figures, and 3 Russian references. ASSOCIATIOv: The Leningrad Works for High-frequency Installations (Leningradakiy zavod vysokochastotnykh ustanovok) SUBMITTED: October 18, 1957 AVAILABLE: Library of Congress Card 2/2 SOV/110-59-1-21/28 The Frequency Range for High-Frequency Heat4 'ng'Installations it would be advisable to allocate frequency bands to such equipment and to permit some relaxation of interference levels in these bands. It is recommended that surfaca- hardening equipment should use the range 65 - 74 kc/s. The third harmonic of this frequen,_,y range is 195 - 220 kels, which is already common in industry and should continue to be used. The frequen3y range of 6.5 t 1o% Mlels is reeommended for valve-generator installations for melting semiconductors. For other applications frequencies ranging from 13 t 5% to 39 t 2.5% Mc/s are suggested. The frequencies recommended are all harmonies of the basic frequency 6.5 Mc/s. The use of high- frequency equipment is jxtending. Unless frequency bands are allocated to uu-1h equipment and higher interference Card 2/2 levels are permitted in these bands, the situation will soon become impossible. BLAGOVESHCIIENSKIY, Gleb Vladimirovich; f~RAN!~qYAHPVJ_ A.A., red. (Use of ferrite magnetic circuits in induction heating Irimenenie ferritovykh r.,agnitoprovodov v praktike in- duktsionnogo nagreva. Leningracl, 196-/. 12 p. (Lenin- gradskii dor, nauchno-tekhnicheskoi propagandy. Obmen pe- rodovym opytom. Seriia: Elel-.trotekhnologicheskie protsessy i ustanovkil no.1) (MIRA 17.9) -Y GRAMENITSM.. VON.; Standard two-piston vacuVa uffnameter. Trudy inst. Kom. stand. mer i izu. prib. no.66:14-26 162. (MIRA 16:6) 1. Voesoyuznyy nauchno-isBledovatellskiy institut Komiteta, Btandartov, mar i ismeritellufth priborov pri Sovata Ministrov SSSR. 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Standard firet-grade nonmercurial piston ba-"ometer. Nov. izm,prib.i motod.ikh pov. no.l.-101--IC14 7-60. .11, (111W. U~12) (Barometer) A: GRAMENITSKIYJ, V.N.; FROWV, Yu.A.; KHAJISUVAROV, K.I. Grade 0.02 standard manometer with meaourement limits from 0 to 2.5 kgf/cr;2* lzm.tekh. So.11:19-20 N 161, (MIRA Il+:Il) (Manometer) 3/113/b2/000/011/003/000 E19VE155 AUTHOR: Kha nail TITLE: Hydrodynamic forces in the piston systems of instruments with seal-leng pistons . PERIODICAL: IzineritelInaya tekhnika, no.11,* 19b2, 23-26 TEXT% The theory of rotat*ing piston instruments is often based on the hydrodynamic theory of lub 'rication of a plain bearing, despite the difference that the loading is mainly axial. In practical piston instruments, inaccuracies of fit and center-tng give rise to some radial forces, so it is necessary to consider the case in which both axial load and tor4ue are applied to the cylinder. Taking the Sommerfeld formula as a basis, with the usual simplifying assumptions- ,(no end leakage, no distortion, constant lubricant viscosity), formulae are derived for forces acting when the piston and cylinder are not coaxial. It is first shown that the relative eccentricities of the piston lines in the planes of the top and bottom ends of the cylinder depend only on the nature of the external load. Two extreme cases are considered. 1) The piston in loaded with a force F and there is no internal Card 1/3 I , s/115/62/000/011/003/008 'Hydrodynamic forces in thq,piston... E194/EI55 torque; in this case the,loading factors are given by the expressions a 0 1-2 (2 + a2 CL where a is the eccentricity. The solution reduces to the Sommerfeld formula. and the loading factors 2) The piston is loade-d with pure torque then are: 1 arcsin a 2 arctan (122 al 0, 72 T 2 al where cx'l and Q2 are the relative eccentricities of the piston at the top and bottom of the piston, re.spectively. An experimental rig, constructed to check the formulae, consisted of an outer 'loaded cylinder'fitted closely over an intermediate rotating driv Ien cylinder, which fita over a stationary piston. The dimensions and clearances used were typical of practical Card 2/3 Hydrodynaill.ic forces irk the piston... S/113/62/000/011/003/008 E194/EI55 instruments. The were made of torqu system was filled with lubricant. Measurements e on the external cylinder when loaded horizon- tally. Its displacement, observed through a microscope, was found to describe a steady double-loop motion around the central Position. The test results agree qualitatively with those obtained from theoretical formulae. Tes.t results obtained under different conditions (speed, Piston conditionst liquid viscosity) agree e,tasonably well if the load characteristics are constant. facilitates preliminary design calclilations The work strain) (not allowing for for Piston instruments. Such calculati.na are Useful in developing new Piston dynamometers and balanc particularly- loadings (thousands es for heavy of tons) for which experience with existing instruments in insufficient; when measuring masses Of 1 - 2 tons with barometric pressure instruments, the Permissible error is of the order of 0.001~.. There are 5 figures. Card 3/3 KHANSUVAROV, K.I Hydrodynamic forces in piston systems of instruments having a nonsealed piston. Izm.takh. no.U:23-26 N 162. (MUU 15:11) (Pistons) -1 2 -NH -AT ACCESSION 3002050 .1/25P,5~--'.!/OOO/066/ool4/oo26 ALMHOR: -Gramnitskly- V, N.- Khsnsuvarov, K. 1. T=: Calibrating double-piston pressure-vacuum gau.Z-! -SMIRCE. USSR.~ Komitet stendartoy, Mr, i izmeritellny~kh priborov. Tx%,dy* insti- tu~ov KomitftaP no-'66 (126),'1962. Tasiedovaniya v oblasti i=erenly davieniya, raskhc~rl% i vaku=al 14-26 T