SCIENTIFIC ABSTRACT YEMELYANENKO, O.V. - YEMELYANOV, A.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001962620012-2
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 15, 2001
• Sequence Number: 12
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

00 Soo
~Los 7)
0 21
814261
S/170J60/003/010/006/023
B0191BO54
AUTHOR: Yemellyanenko,_O. V.
TITLE: The Measurement of the Surface Temperatur of Bodies by a
Thermocouple WITA Controllable Preheating-
P
PERIODICAL:. Inzhenerno-fizicheakiy zhurnal, 1960, Vol- 3, No- 10,
pp. 54 - 56
TEXT:. In the introduction, the author refers to the error in the mea-
surement of the surface temperature of bodies due to the
fact that the hot junction of the thermocouple lying on the
body surface is also touched by the cooler surrounding me-
dium.- In the present paper7 the author suggests a variant
of thermocouples, shown in the Fig. adjoining, by which it
is possible to eliminate virtually the influence of the
cooler surrounding medium. This variant consists of two
3-1/ thermocouplesy thermocouple I measuring the temperature of
the body surface; II that of the surrounding medium. The
temperature of the surrounding medium is regulated by means
Card 113

84261
The Measurement of the Surface Temperature of S/170./60/003/Olo/oo6/023
Bodies by a Thermocouple With Controllable B019/BO54
Preheating
of a small heating element 3. The advantages of this combination of
thermocouples become eviden-t in the experimental results shown in
Table 1:
T T T To is the actual surfaoe temperaturep T,
0 X oor is the temperature measured-by an ordinary

2 '
* 0 thermocouple, and T is the temperature
C
35. C
33 35.2 C cor
58-2 51 58-2 measured by a combination as is described
here. The thermocouple combination de-
83 78 82.9 scribed also offers advantages over semi-
100 90 i00.1 conductor instruments. The author thanks
Professor D. N. Nasledov for his interest,
and Profes A. F. Chucbiovskiy for valu-
able advice. F. P. Kasemanly, Post-graduate Student, assisted In the ex-
periments. Th;re are I _ffFr_ej 1 table, and 2 non-Soviet references.
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814,261
The Measurement of the Surface Temperature of 8/170/60/003/010/006/023
Bodies by a Thermocouple With Controllable B019/BO54
Preheating
ASSOCIATION: Fiziko-tekhnicheskiy institut Akademii nauk SSSR,
g. Leningrad Qnstitute of Physics_and Technology of thgL_
Academy of Sciences,_Leningrad)
SUBMITTED: January 7, 1960
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8
GW16 11000105 11/0 16. Ian
A
A058/AlOl
0 /Y' 37)
AUTHORS: Yemellyan Nasledov,D. N.
TITLEt Comprehensive investigation of the mechanism of equilibri%m electrLn
conductivity in gallium arsenide
PERIODICAL: Referativnyy zhurnal, FIzika, no. 11, 1961, 232, abstract 11E435
("Uch. zap. Kishinevsk. un-t", 1960, no. 50, 3-10)
TEXT: One and the same instrument was used to measure the conductivity,6'
the Hall constant R, the differential thermo-emf W, and the longitudinal and
transverse Nernst-Ettingshausen constants Q11 and Q1 . In this instrument a
diffdrence in temperatures Is'produced along a specimen and,measured by thermo-
couples, which are used as current feeds Incident to measurement of Tand R.
Qj. is measured on Hall probes, while Q11 Is measured on the same terminals as
o~ The instrument has a symmetric heater-cooler system, by virtue of which it
is possible to vary the direction 6f the temperature gradient along the Specimen
and make the specimen undergo practically any temperature drop. The measured
potential differences amount to no less than 10 Av; the sensitivity of the
circuit is $k,' 0. 3 pv. The principal error of the instrument is in the determina-
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17
sAMi/ooo/bil/016 025
Comprehensive investigation of the mechanism ... A058/A101
tion of the temperature differences A T of the ends of the specimen. Two n-type
Ga-As specimens were Investigated. Specimen size was 12 x 3 x I mm. The
temperature was measured in the ranie 00 - 6000K. From the curves of R versus
T it is evident that both specimens are In the region of Impurity conduction.
At high temperatures scattering ~y phonons plays an essential role; with
decrease in temperature (T < 3000 - 4000K) scattering by the ionized imp-irity
Increases.
E. Filippova
[Abstracter's note: Complete translation]
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034
810811611000102010101089
v7 ~ Clo A/ B144/B101
AUTHORSt -Yomellyanenkot Oo Vag Naeledov, Do R.
TITLEt Comprehensive investigation of the olootrioul-conduotivity
mechanism in gallium arsenide
PERIODICALt Referativnyy zhurnal. Khimiyaj no. 20t 19611 339 abstract
20B229 (Uoh. zap. Kishinevsk. un-t, v. 55, 196o, 3-10)
TEM The temperature dependences of the thermo-emfj of the constants of
the Nernst-Ettingshausen effect, of the Hall constant and of the Hall
mobility were studied in n-type GaAs samples. It has been established
t'hat in the range of medium temperatures (< 300 - 4000C) the soattering.from
impurity ions plays a fundamental role in n-type'GaAs samples containing
various amounts of impurities (electron concentration
3-10 16 - 3-10 18 0m-3). [Abstraoterts notes Complete translation-3
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.89286
S/181/61/003/001/025/042
B0061BO56
AUTHORS: Agayev, Ya., Yemellyanenko, 0. V., and Naeledov, D. N.
TITLE: Investigation of the thermomagnatic Nernst-Ettingshausen
effects in,solid solutions of the InS'~--AlSb system
PERIODICAL: Fizika tverdogo tela, v. 31 no. 1. 1961, 194-197
TEXT: Already in earlier papers (Refs. 1-3) the authors reported on
studies made of the InSb-AlSb system; the first component is characterized
by high carrier mobility, the second by a broad forbidden band. Electrical
conductivity, Hall effect and change in resistance in a transverse magnetic
field have already been studiedl studies of this system were continued, and
form the subject of the present report. The principal aim of further
investigations was to explain the scattering mechanism of carriers in solid
solutions (by means of the Nernst-Ettingshausen effect), and to obtain more
exact data on carrier mobility. The measuring method is described in
Ref. 4. Fig. I shows the temperature dependence of the transverse Nernst-
Ettingshausen effect (Q1) on the basis of several compositions. In the
impurity region, tho specimens hud hole-type conductivity; at room
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89286
S/181/61/003/001/025/042
Investigation of the thermomagnetic... Boo6/BO56
temperature the hole concentration of speci .mens 1 (InSb) was 3-10 15 cm-3
and that of 2-4 was about 3-1017 cm-3 (2: InSb-AlSb, 3: 2.5InSb-7.5AlSb,
41 AlSb). Measurements were carried out in)magnetic fields of 7000 oe,
specimen 1 at 1200 oe; (weak fields, uH/c4l . The negative sign of the
N-E effect in specimens 2-4 at low temperatures indicates that the carriers
are scattered on impurity ions, as is natural for semiconductors of the
AIIIBV group. Also the nature of the temperature dependence of the Hall
effect is n agreement with this fact. At low temperatures, InSb has a
positive , which indicates that the carriers are scattered on acoustic
lattice vibrations. Scattering by impurities is insignificant owing to the
high purity of the specimen. Impurity conductivity is conserved in AlSb,
and the scattering mechanism may be determined even at high temperatures.
At T >3500K, QJ- is positive (carrier scattering by acousUc lattice vibra-
tions), but also in the case of InSb the Ql-(T) curve becomes positive
within the region of intrinsic conductivity. This is possible in spite of
the bipolar character of conductivity, because in InSb the electron-to-hole
mobility ratio is high, and the forbidden-band width is low. In InSb-AlSb
specimens, the part of tho QI(T) curves related to mixed conductivity is
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89206
S/181/61/003/001/025/042
Investigation of the thermomagnetic... B006/BO56
shifted-toward higher temperatures. In InSb, mixed conductivity begins at
about 1400K; in InSb-AlSb, at about 2800K; and in the specimen containing
75% AlSb, at 500-550OK; in AlSb it does not occur at all. This may be
explained by the increase in the forbidden-band width in the case of in-
creasing AlSb content, As regards carrier mobility, it was found that~in
transition from InSb to AlSb hole mobility decreases. On the assumption
that at low temperatures in specimens 2-4 only impurity ions act as
scattering,centers; the holI mobility may be calculated from the N-E effect.
At 1100K, W, 80 and 30 cm /v-sec was obtained for specimens 2, 3, and 4.
These values are 2-3 times as high as those calculated from Hall effect and
conductivity (under the same conditions); however, they appeared to be
closer to the true values, because the N-E effect is not disturbed, e.j
by a crystalline structure. In any case, these values may be considered to
be limits. Fig. 2 shows the temperature dependence of the longitudinal
N-E effect (Q11), on InSb (1) and InSb.AlSb (2). The fact that QO Of (1)
max
surpasses Q11 of (2) by about 2 orders of magnitude (the same may be
max
observed in the case of Q1) is explained by the much higher mobility and
the much higher mobility ratio. Results show that scatterin,- on the
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89286
S/1 a IJ61/003/001/02 5/04 2
Inveotigation of the thormomagnetic... B006/BO56
disordered structure of InSb-AlSb alloys is low. Carrier mobility may be
increased by an increase of purity. There are 2 figures and 6 Soviet-bloc
references.
ASSOCIATION: Leningradskiy fiziko-tekhnichookiy institut AN SSSR imeni
akad. A. F. Ioffe (Leningrad Institute of Physics and
Technology AS USSR imeni Academician A. F. Ioffe)
SUBMITTED: June 22, 1960
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89 A6
S/lalj6l/003/001/025/042
Investigation of the thermomagnetic... BO,06/BO56
+20-, r o4,,
400
0

89287
S/ 181/61/003/001/02 6/04 2
J/,, 2,70 0(/a 1131 IIY31~ 119f) B102/B204
AUTHORSo 'Tomellyan*nkol 0. V., Lagunova, T. S., and Naeledov, D. N.
TITLEs Impurity band in 'p- and a-type gallium arsenide crystals
PERIODICALt Fixiks tvordogo tola, v. 3, no. 1, 1961, 198-203
TEXT& The present paper in a continuation of an earlier paper (Ref. 1)
in which high-impurity n- and p-typs GaAs specimens have been examined.
It had been found that, in those specimens, the carrier concentration
do Os not change with decreasing temperature (from room temperature to
1.5 _ 20K), and also the electrical conductivity remains nearly constant.
In n-type specimens, the activation energy of impurity levels was equal
to zero because of the formation of an impurity band overlapping the
conduction band, and the electron gas was degenerate. The effective mass
of the holes in GaAs is a multiple of the electron mass. Here, data are
given on measurements of,the Hall constant and the electrical conductivity
of p- and n-type GaAs specimens, which are discussed. The measuring
method is described in Ref. 1. The specimens were produced from initial
substances of high purity (99.99%)j the characteristic properties of the
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Impurity band in p- and n-type...
8/181/61/003/001/026/042
B102 B204
various specimenc are given in a table. The results of measurement are
shown in Figs. I and 2. Within the entire range of measurement (2-6oo 0K),
the specimens were within the region of impurity conductivity. The
temperature dependence of Hall constant electrical conductivity for
p-type Oaks in shown in Fig. I and Fig. 2, respect Svely. In the latter,
the slope of the curves in constant from 30 to 4.2 K (the apparent breaks
are due to the change in scale). Go, In8b, and other semiconductors show
a similar course of the curves, which in explained on the basis of a
hypothesis concerning the mobility in the impurity band (Phys.RAt. v.96,
p. 1226 and v. 99, P. 400). Here, the existence of two types oi carriers
of the same sign is asnumadt ordinary carriers in the conduction or
valence band, and such of lower mobility in a band formed by overlapping
impurity levels. The Hall constant R may be expressed as a function of
concentration and mobilities of the two types of carriers (1,2).:
R - a (u2 n + u2 n + u n 2 , where n + n - constj the constant r
r 1 1 2 2)/(u,'l 2 2) 1 2 a
differs only little from unity. Figs. 3 and 4 show R(T) and 6(T) for
n-type Gaks. The maxima of the R(T) curves may beexplained either on
the basis of the above formula for ul n1 =u 2n2l or by a surface conduction
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5118.11611003100110261042
Impurity band in p-and n-type.os B102/B204
effect., However, the latter cannon explain all the phenomena observed. -
depends on processes occurring in
The slope of the curves witli T< 30 K
the impurity band, and.at higher temperatUres on carrier transitions from
the-impurity band to the conduction or-valence bands-. The width of the
energy gap between acceptor levels and valence band may be calculated
from tfie slopb of'the R(.T) curves or (for pure specimens) from the formula's
n e
zp(.-&E ~ /kT)&. Both methods yielded similar resultst
gap,
'6E 0.01 0.02 9v. The gap between donor levels and conduction band
gap
was'found to be even smaller. ~Somq interesting results were obtained for
oonduotivityl'thus, the resistivit.Y%,of n-type GaAs at low temperatures
in a transverse magnetic field doeff-not increase (as is otherwise the case
in semiconductors) but deoreaees. At H - 5000 oe- and at helium
temperature, the 'resistivity decrease in some cases attains 0.6 - 0 7%;
0
in the case of pure specimens,(5300 oe), even 7-5%; and at 2.4 K, 1;9;-
0n p-type specimens, this effect was either very low or did not occur at
all. The effeot'on n-type GaAs'oannot be explained,by theories available
today. There are 5 figures, 1 table, and 4 referencess 1 Soviet-bloo and
3 non-Soviet-bloc.
Card

9287
61, * 2
6,100VOO-1102 04
Impurity band *in p-, and n-type... B1~6YB204
02
ASSOCIATIONt Leningradekiy fiziko-tekhnicheakiy institut AN SSSR imeni
d.
d. A. F. Ioffe (Leningrad Institutesof Physics and
41 r
To nology AS USSR.imeni'Academioian Ai F. Ioffe)
SUBMITTEDt Jun 22, 196o
Nan~ "r a06
WOONTIA91k Tom&
a w Rt.
n M _;R_ C
a... % K 0015 get!
WR
Legend to the tables 1) Number and ASMOCIN 3) 14)
-type of conductivity of the speoimenl'
2) impurity, % by weight; 3) carrier
1concentrationj 4) carrier mobility. 3p 0.1 Cd 1.1091 75
4 p 0.01 Zn 4.5-1018 95
5 P 0.1 Cd 1.5-1028 140
6p 0.05 Cd 4.1017 ISO
7p 0.013 Cd 1.5-1017 220
1.1017
.8 P -0.001 Zn 3W
7 n - 4.5-1017 M
8n, 0,001 So 2.1.1017 3300
2.2 .1014 3200
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fol 7p
61

k7p
'49
4 f s 119 IM, W 40 'o f 1 4 sslo.
J,9 4,
Np 4 1,9 Ir
:,.,-.Card 5/6

61 003/001/0'26/042
ImDurity band in'p- and n-type B102 B204

22054
S/181/61/003/004/02P/030
B102/B214
AUTHORSs Yemelyanenkop 0, V.9 Kesamanlyq F. Pol and Nasledov, Do No
TITL'Es The dependence of the effective mass of the electron in
n-type InSb on the carrier concentration
PERIODICAM Pizika tverdogo tela, v. 3, no. 4, 1961, 1161 - 1163
TEXTs The authors give the results of a determination of the effective
electron maos in InSb for different carrier concentrations. The determi-
nation was done by measuring the differential thermo-emf. The experimen-
tal apparatus has been described by the authors in an earlier paper (FTT,
Ht VYP- 7t 14941 1960). The samples were prepared by fueing the compo-
nents in a otoichiometric ratiot They had n-type conductivityp and a
carrier concentration n - 3.101 0m-3 (at room temperature);01~hey_were
doped with selenium up to an impurity concentration of 2.5- cm 3. The
size of the samples was 1 x 3 x 10 mm. They were polyorystalline and suf-
ficiently homogeneous. The differential thermo-emf can be expressed by the
relation Oc- ~.r r+2 F (1), where r is- the exponent in
L r+1 P
r(
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22054
811811611003100410201030
The dependence of the
.... B102/B214
the scattering law 1-vLr, E the electron energy cal culated from the bottom
of the conduction band, 1 the electron mean free path; for the various
kinds of scatteringt r has the values Ot 1/2, 1P 3/2# 2; 6kis the reduced
Fermi levell and Pr(eL) the Fermi-Dirac integral. On the other hand the
electron concentration in the conduction band is related to t4.1
n 3/2 4 (2tfmkT)3/2 F
V yr X 2 1/2( ~)p where m* is the effective mass of the
h
conduction electron and m the mass of a free electron. From % and r one
can determinetAt from which m* can be calculated by the last equation.
Since tAe thermo-emf in each case is a function of the scattering mecha-
nism, the m* values for all InSb samples were calculated for the two ex-0
treme r-values 0 and 2. These values are given in the table for T W 300 K;
so also the ~ values. If it is assumed that the scattering mechanism does
not vary from sample to sample, the effective electron mass increases sig-
nificantly with increasing electron concentrations In sample 3n which
contains 2-5910 19 electrons/CM3, m*/m is three times as large as in the
pure sample 18n. This result is independent of the r-value. The assump-
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S/181/67100'3/004/020/030
The dependence of the ... B1021B214
tion that the character of scattering in the samples is independent of
the-impurity concentration is not very exact. In diamond-type orystalay
to which InSb belongs, the electrons are scattered by acoustic lattice
vibrations (r-0) and impurity ions (rw2). The role played by the two
processes is a function of the temperature, the electron and impurity
ooncentrationst the degeneracy of the electron gas, etc, If the increan-
ing role of lattice scattering with an increase of the carrier concentra-
tion is taken into account, the effective mass of the electrons increases
with increasing carrier concentration even more rapidly. It can, there-
forep be said that in degenerate n-typo In3b the effective electron Maas
increases significantly with increasing carrier concentration. The authcra
thank V. V. Galavanov for making available the InSb samples. There are
-.1 figure, 1 table, and 5 refereneess 3 Soviet-bloc and 2 non-Boviet-bloc.
The two references to English language publications read as followas
S...,D. Smith, To So Moss, K. W. Taylorl To Physo Chem. 8o1. 1-1, 131, 1959;
W. Go Spitzer2 H. Y* Pan, Phys. Rev. 106, 5, 882# 1957-
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22054
S/18i 61/003/004/020/030
X
I B214
B1 02
h dependenoe
T of the
icheskiY institut imoni akad. A, P- loffe
lo
kh
ASSOCIATION2 n
i
gY
Fiziko-tc eningrad (Institute Of physiOs and Techno
rad);
N sSSR L
in
L
en
A
g
. F. IOff6v AS USSRO
imeni Aeademician A I (Institute of Physicas
k'
B
a
Institdt fiziki AN AZSSR
Baku)
AS AzerbaYdzhanskaya SSR,

,SUBMITTED.1 August III, 1960

end to the
L
eg

----------------

-2
-:
Table: 1) Sample, "NA!rPGA-
.2
F=2
a9 p/deg. '.0
0

moil
.1.4 1.0 0.029 0.013
30-10's 308 -
040
0
.
18 n
0.3' 2.7
14 n 13-1017 220 2A 7.1 OM8 0.017
11 n 9.0.1017 102 83 25.0 0.062 0.021
098 0,033
9-1013 A 0
6
.
.
6n 2.5-1010 23 123 37.0
23
3n
Card
4/4
:

28074
S/181/61/003/009/006/039
2L1-11 DU k, ///4' XfOl B102/B104
AUTHORS. Andronik, I. K Kot, M. V., and Yemellyanenko, 0. V.
TITLE: Electrical properties of cadmium antimonide single crystals
at low temperatures
PERIODICAL: Fizika tverdogo tela, v. 3, no- 9, 1961, 2548 - 2552
TEXT: Pure CdSb single crystals were examined for the temperature
dependence of the two components of the conductivity tensor, of the Hall
effect, and of the magnetic resistivity between 2.4 and 78 0K. The
specimens were two blocks of single crystals obtained by the Bridgman
method. The crystals had previously been recryBtallized three times in H 2
atmosphere. The specimens were 4-4-10 mill large, and the faces were
perpendicular to the axes Z!(1003, 7[0101, and 'C[0011. V. I. Dedl of the
Moldxv3'kiy filial AN SSSR (.Moldavian Branch of tile AS USSR) chocked these
data by X-ray structural analysis. One of the specimens was cleft along
the 9axia, and along the -C>axis the other. A measurement of the tempera-
ture dependence of the resistivit7 (1n R - f(l/T) showed that the
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28074
S/18 61/003/009/006/039
Electrical properties of... B102XB104
absolute values of resistivity differ in the axial directions b and C. The
type of temperature dependence is the same. The components R 321 and R231
of the Hall-effAct tensor are positive ovor the whole temperature range
(H 321 : currentl1b, Hliia-', Hall emfllc; 11 251: currontIl-c'I Hilt, Hall emf 11 b). The
curve 1n R = f(l/T) shows, for the R 321 component, a maximum at 1/T = 0.25.
While the R-componente are independent of T at room temperature and liquid-
hydrogen temperature, they become smaller at 4.20K on a rise of 9'. Pt
900K, the relative change of resistivity in the ma6netic field is linearly
2 2
dependent on H . At 4.20K,,6q/qH drops with growing H. The anivotropy
of the CdSb crystals was also observed in the rotation diagrams 69/q- f(y)
constructed at 4.2 aK and H = 5300 oe. The most interesting fact revealed
by the results is that the curve R(T) passes a maximum at about 40K, while,
at the same temperature, the curve 8(T) passes from a weakly exponential
slope to a steeper one. This behavior reminds of that of the Hall effect
in p-type Ge with an acceptor concentration of 10 16 cm-3, and may be
explained with the hypothe3is concerning the impurity conductivity
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21M
6/181/61/003/009/006/039
Electrical properties of... B102/BI04
(C. S. Hung. Phys. Rev. 79, 727, 1950). An accurate analysis of data
obtained allows the folli-wing conclusions to be reached: (1) A narrow
acceptor band, lying 0.005 - 0.006 ev above the fundamental band, is
formed in CdSe single crystals with a defect concentration of 3-1015CM-3.
(2) The hole mobility in the fundamental band iu about 3000 timen as high
as in the impurity band. (3) The hole mobility in the fund4mental band
increases as temperature drops to 200K approximately as T-3/2. This
indicates that the holeg aro scattered by thermal (acoustic) lattice
vibrations. (4) At 4.2 K, the Hall conctant and Aq/9 112 drop with a rice
of H. ~!rofessor 1). N. Nasledov is thanked for lidlu and interest
displayed. There are 6 figures and 5 references: 4 Soviet and I non-SoviLL
-'~'OMTION: Kit;hinovokiy gosudarotvonnyy universitet (Kinhinev State
i
t oj
University)
SUB4:41TTED: February 15, 19u1
Card )/ 5

A244
S/18 62/004/002/039/051
.N'woo Y) B102XB138
AUTHORS: Yemellyan!j~ ~, Kesamanly, F. P., and Nasledov, D. 11,
TITLE; Thermomaanetic Ifernst-Ettingshausen effects in degenerate
0
indium antimonide
PERIODICAL: Fizika tverdogo tela, v- 4, no. 2, 1962, 546-548
TEXT: The temperature dependence of the longitudinal and the transverse
Nernst-Ettingshausen effects was investigated in weakly and strongly
degenerate InSb single crystals in the range 100 - 6000K. In+Sb were
mixed in stoichiometric ratio, melted and doped with Se; the Czochralski
method was used to grow electrically homogeneous single crystals with an
electron concentration of 10 16 _ 10 19 cm-3. The orystals measured had the
following characteristic parameters at room temperature:
tX
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34244
S/181/62/004/002/039/051
Thermomagnetic Nernst-Ettingshausen ... B102/BI38
number of specimen 17n 13n 7n
electron concentration 4-10 16 3-10 17 6.1018 cm-3
mobility 60,000 40,000 6000 cm2/v.sec
degeneracy 0 +4 +14
linearity of N-E effects
up to 800 1500 10,000 oe
measurement of temperature
dependence of II-E effects 600 1000 4000 oe
13n and 7n had impurity conductivity, 17n - mixed conductivity. Since
the hole mobility and the role of the holes in the thermomagnetic'effe-cts
was miieh smnller than that of the electrons, the theory of pure impurity
conductivity ~s applicable for all specimens. The results show that
for InSb, as f0; InAs, at higher temperatures the electrons are mainly
Card 2 /V Z7

4/002/039/051
VwL-rioma~i,netio Nernot-Ettingshausen B102/bl3b
sc;-:tterod from acoustic lattice vibrations (q" Q11)0). Lattice
scattering increases with the degree of degeneracy. There are 2 fivurs~~,;
and 9 references: 7 Soviot-bloc and 2 non-Soviet bloc. The reference
to the Engliah-language publication reads as follows: 11. Ehrenreich. J.
11hyn. Chem. Sol. 2, 131, 1957-
A:_;JOCIATION: Fiziko-tekhnicheakiy inctitut im. A. F. loffe All 33011
Leningrad (Physicotechnical Institute imeni A. F. loffe
AS USSR, Leningrad). Inotitut fiziki All Az. SSR Baku
(Inutituto of Physics AS Azarbaydzhanskaya 8SRI Baku)
SUBMITTED: September 13, 1961
Fig. 1. Temperature dependence of q~ for 17n (1)p 13n (2) and 7n (3).
Fig. 2. Temperature dependence of Q' for 17n (1), 13n and 7n (3).
q1' and (14- given In CGOM units.
Curd 1__7

81768
S118116010021021021033
BOO6/BO67
~4,7700
AUTHORS: Yemell of V49 LMunovaj T. S., Naeledov, D. ff.
TITLEt Scattering of Car llium Arsenide4ith Strong
Degeneration
PERIODICALs Fizika tverdogo tela, 1960p Vol. 2# No. 2# pp. 192-197
TEM In the present paper, the authors report on experimental investi-
gations of the electrical conductivity and the Hall effect of highly
alloyed n-type and p-type gallium areenide)%amples with impurity
conductivity, In which the electron and hole gases, respectively, are
strongly degenerate. The conduction electrons in gallium arsenide have
a small effective mass (m* -" 0.05 m), so that the electron gas is
n
degenerate in a wide temperature and electron-concentration range. At
room temperature, degeneration (1-/kT >-O) occurs at electron concentra-
tions nAb5-1017 cm-3, strong degeneration (/t/kT > 2) with
n > 1-5-10 18 cm_3j /jdenotes the Fermi level energy. The effective hole
Card 1/4

81768
Scattering of Carriers In Gallium 5/181/60/002/02/02/033
Arsenide With Strong Degeneration B006/BO67
mass in gallium arsenide is M* :* 0.5 m, degeneration occurs at room
temperature with p > 10 19 CA, strong degeneration with P > 3-10 19 cm-3.
n-Type gallium arsenide in the concentration range 4-10 17 - 3.1018 cm-3
has been investigated in a previous paper (Ref. 2). In this paper,
measurements of conductivity and Hall constant are again carried out in
the temperature range 78-5000K (in some cases at 2_9000K) by using the
method described in Hof. 2. The carrier concentration and mobility were
determined from the equations n a I/eR and u - Rd, which are well
satisfied in the case of strong degeneration. The purity of the elements
added to the samples was a 99.99%, the electron concentration at room
temperature was 0 1 3)-10 18 cm-3 and (3 L 5).10' 6 cm-3 1 all samples whose
characteristics are given in Table 1 were single crystals. Fig. 1 shows
the depenlence of the carrier mobility on their concentration at 2900K,
Fig. 2 the temperature dependence of the resistivity of n-type GaAs in
the range 2-9000K, Fig- 3 shows the same for p-type GaAs. Fig. 4 shows
log u U f(log T) for both types. The investigations yielded the follow-
ing results% Electron and hole mobility depend only slightly on the con-
Card 2/4

81768
Scattering of Carriers in Gallium
Arsenide With Strong Degeneration
S/181/60/002/02/02/033
B006/BO67
centration of the uncompensated impurities in the sample. In the low-
temperature range, n-type and p-type conductivity are practically
independent of temperature. Above 50-2000K, the carrier mobility decreases
with temperature the more, the stronger the sample is alloyed. At
T 400-700OK9 however, the mobility decrease in non-degenerate samples
is stronger than in degenerate ones. At low temperatures, scattering
from impurity ions is dominating in all samples, at high temperatures -
by lattice vibrations. With increasing carrier concentration, the
scattering from the lattice increases. The most important experimental
results can be explained by the general theory of.carrier scattering in
a simple impurity semiconductor. For a qualitative explanation it is
sufficient to assume that the velocity of the scattered electrons in
strong degeneration is much higher than the mean thermal velocity which
they would have in the non-degenerate casev and that it does not depend
on temperature. This velocity increases 'with electron concentration.
There are 4 figures, 2 tables, and 7 references, 3 Soviet, 2 American,
and 2 British.
~X
Card 3/4

81768
Scattering of Carriers in Gallium S/18i 6010021621021033
Arsenide With Strong Degeneration B006XBB067
ASSOCIATIONt Fiziko-tekhnicheakiy inatitut AN SSSR Leningrad
(Physicotechnical Institute of the AS USSR, Leningrad)
SUBMITTEDt may 131, 1959
Card 4/4

TZMIYAITJM, O.V.; ZOTOVA, N.V.; NASLXDOV, D.N. .,
Thermomagnetle Nernst-Ittingshausen effect in indium arsenide.
I?iz.tver.tela 1 no.12:1868-1871 D 139. (MIRA 13:5)
1. Yiziko-takhnichookly institut AN SSSR, Leningrad.
(Indium arsenide-Zlectric properties)

ReDort nresented at t~e 3rd National Conferenre m SeirAconductor
Compoi.irds, Kishinev, 16-21 Sep~ 1963
-ectrical properties of highly degenerate crystals of n- and p-type
-Lil`um arsenide Kesamanly, D. N. Nasledov,
m
em
ye
0. V. Y
V. G. Sidorov, G:
Concerning the interaction of electrons with lattice vibrations in
za-lium arsenide. 0. V. Yenel'yanenko, T. S. Lagunova, D. N. Nasledov,
V. Ye~ Shcherbatov . ....................... ~-~
Electrical properties of gallium arsenide with different impurities.
D. .11. Nasledov, G. N. Talalakin.
investigation of the properties of impurity zones in crystals of p-type
gallium arsenide. 0. V. Yemellyanenko, T. S. Lagunova, 0. N. ~asledovl
V. Ye. Shcherbatov. - -ft-W%W
Galvanomagnetic properties of indium arsenide in a wide temperature
range. Yu. M. 8urdukov, 1. V. Zatova, T. S. Lagunova, 0. N. Nasledov.
Nernst effect In n-type indium phosphide.
~F. P. Kesamanly, E. E. Klotin'.
(Presented ky P. mellyaSonko--2.5 minutes).
_je

811611631005100110241064
B102/Ble6
AUTHORS: Nas~edov, D. N.# Mamayev, S.# and Yemellyanenko, 0. V.
TITLE: Investigation of the thermo-emf and the thermomagnotic
effedto in alloys of the system-CdSnAn 2- 21nAa
PERIODICAL: Fiziks, tverdogo tela, v- 5, no. 1, 19639 147-150
TEXT: The authoraicontinue previous investigations (FTT, 2, 176, 19601 39.
3405, ig6i; DAN SSS11, 142, 623t 1962) of the system CdSnAa 2- 21nAe whose
Initial components are characterized by a partioulaIrly high carrier
2/v.sec).
mobility 015,000-20,000 cm in the range 0-50% InAs the alloys
have chalcopyrite atructure and above 50% InAs sphalerite structure;
below 75% InAs they are n-type, above this they are p-type. T.I;e thermo-emf
and the thermomagnetic Nernst-Ettingshaueen effects were measured by a
method described in PTE, No. 1, 98, 1960, applying weak magnetic fields
(uH/c~(I). In CdSnAs , InAu, the Nernst-Ettingehausen effects
2
thermo-emf (a), mobility (u) and Hall effect (R) were measured in the
Card 1/ 3

3/18 63/005/001/024/064
Investigation of the thermo'-emf and B102YBI86
0
range 100-600 K. For Cd3nAa2 and InAn the temperature depondonoon of the
effects were similar: At low temperatures Q11 and q1 wore negative, changod
sign between -300-400 0K afid reached maxima at 6000K. u decreased slowly
with increasing temperature and dropped to 6000 om2/y.000. It remained
almost constant, a was alwdyn negative# lal increased with temperature.
The negative sign of Q at low temperature is indicative of carrier
scattering from impurity ions; r from the 1~vr I., is 2. The positive
sign at higher temperatures is attributed to cariier scattering from
acoustic phonons (r - 0.0- 0.3). Here I ie the mean free path and v the
velocity of the carriers (electrons Correeponding measurements of
2CdSnAs * (21nAs) and CdSnAs,-(21nAs~-,having electron concentrations of
2
1.7-1,0.1acm-3 and 4-10 18 cm-3 at room temperature, were made in the range
100-7009K. For both alloys*qll and Q-1 were positive in the whole range
with maxima at high temperatures. u and R of the first alloy remilned
almost constant, u of the second one had a dietinot maximum at TZ 6000K
(-2000 cm2/v,sec) whore R dropped. For both r 0.3 0.9 in the whole
Card 2/3

3/18 63/005/001/024/064
Investigation of the thermo-emf and ... B102YBW
temperature range. The effective carrier maze was always small and
almost independent of composition; its most probable value was-/0-045 no.
Ther6 are 4 figures and 1 table.
ASSOCIATION: Fiziko-tokhnicheskiy institut im, A. P. Iofte AN SSSR,
Leningrad (Physicotechnical Institute imeni A.* F. Ioffe
AS USSR, Leningrad)
SUBMITTED: July 23, 1962
Card 3/3

GALAVANOV, V.V.j YEMELOYANENKO, O.V.1, KESAWLY, F.P.
Electron effective mass in InSb with degenerate electron gas.
kiz. tver. tels, 5 no,2:616-618 F 163. (MIRA 160)
1. Fiziko-tekhnicheakiy institut imeni A.F.Ioffj AN SSSRP
LenIngrad i Inatitut flzi4i AN Az33R., Bakus
(Indi= antimonide) (Electrons)

BURDUKOV, Yu.Ho; YDEE~IT ZOTOVA, N.V.; KESAMANLYt F.P.;
_4W
KLMNISH, E.E.; LAGUNOVA, T.Se; NASLEDOVO D,N.; SIDOROV,, Y.G.;
TALALAKINp G.N.; SHCHERBATOV, V.Ye. (deceased]
Transfer effects in AIIIBV type compounds. Izv. AN SSSR. Ser.
fiz. 28 no.6t951-958 Je 164. (MIM 17:7)
1. Fiziko-tekhnicheskiy Institut, imeni A.F. Ioffe AN SSSRS
i

-X-40,73-66 1W(1 ~f-IJEW-W.
AU. NMI AP50257 SOURCE CODE:
-AINHOR: Burdukov, Yu. H.; Voronina, T. I.; Yemel'yanenko, Oo V&; lAgunovs, T.
ORG:, PhLrolcotechnical Institute Im. A. F. iorreo A Icademy or ScIences,ASSSR (FIziko-_-_
tekhnichcqkiy lnstitut, Akademil nag SSSR)
TITLE: Distribution of.impurittes In Ai-a-itIT arsenide slnRle eirystals grovn by the
Czoehral.ski me thod
SOURCE: AN SSSR.' Izvestiya. Neorganicheakiye materialyo v. 1# no, go 1965,
1459-ilift
TOPIC TAGS: gallium ars6nide, tellurium,.doped gallium arsenide, Impurity
conductivity
ABSTRACT: A atudy hqs been made of the distribution or !Fe dopont and contaminancs
in semiconductor Tel4oped GaAs single crystals growtft~lhe Czoeltralski method. The
experiments consisted of determining and the Hall constant in
specimens cut out from ingots perpendicularly to their longitudinal axi.s. From these
data the carrier concentration and mobility and their distribution along and across
the ingots were- calculated. It was shown thnt the distribution of Te In Ingotal as
determined from electron- concentration -and -electrical:- conductivity-, -in -not uniform.______
-It Increases from.thb-top to the bottont of the ingot by a factor of 3 to 5, and from
the periphery of the Ingot to its center by 20 to 140%. The concentration of contami-a

L 4073-66
ACC M AP5025778
nants, af; (letermined from carrier mobility, Increases t6ward the bottom of the In-
gots faster than that of Te, The nature and penetration course of contaminants in
the melt remained unclear. One of the most probable contaminants is Si, which forms
acceptor-donor pairs and In a quartz decomposition.praduct. It Is concluded that
every doped GaAs ingot intended for induntrial applicatlofi shoUld be subjected to in-
dividual homogeneity control. Orig, tArt, hant 3 figureas IBO)
SUB CODE: 55 1 SUBM DATE, 15May6V ORIO REF:. 601/ Ont REF1 0014/ ATD PRESS;
card ?/2

N . , . . I
. . I - I
. ~ I
. . , . a ,
11 "
I
I

'597
o.nd neutrid imp-w-ity atcm Th~a YeFultl- qbhov i*r&ak lnll~Aa_
L dentityr J-hp -era-. -e sary f crr reversal of the cmd-Tc-
highL-r Vha diffUSiM te#rp
eauivalent' to a yield Of 1--~ "CePtor

YEWL'YANENKO, O.V.; KLOTYNISH, E.E. [Klotins, E.); NASUTOV, D.N.
Effect of copper on the electric properties of gallium arsenide. Fiz.
tver. tela 7 no.5:1595-1597 My 165. (MIRA 180)
1. Fiziko-tekhnicheskiy institut imeni Ioffe AN SSSR, Leningrad i
Institut energetiki AN Latviyskoy SSR, Riga.

-- -- -- : ~- - -~-. 1-
. . ;-, I .
- - I k~ - -, . t 1 M,~." ~ ~ I -,
L 203L9--65 9.'rl- ~ ` I I fz~ , " N ! '~ - ~-' ' ! ' ! -' - ' !- /A7
, - 1~ -I- 1-~ /A FETIRJ'RAFN( a) ~&SDkgs )/CY,$-,% -,
I /f-AR/641028/004/0951/0958

u

-d -it! I.. - ~ - ~ .1 1

YEWLIYANENKO, P.A., staralily il uclinyv notrudnik
-.1 ~-- ---
-11-
Treating the skin of ani-ils infected with anthrax. Veterinariia
41 no.9t98-100 3 164. (MIRA 18W

yEmELOYAMIKO, P.A.
Arrangemont for group ultrafiltration- Lab.delo 7 no.llt5(-,1,7
14 161. (ULTRAFILTRATjolq-,EquirblEtIT AND SUPPLIES) (MIRA u:10)

SUBJECTt USSR/Geology 5-2-19/35
AUTSORs Yemellyanenko, P.F.
TITLEx Karamendinakays, and Terektinskaya Intrusions of Granitoids in
Kazakhstan (Karamendinakaya I Terektinskaya intruzii granitoidov
v Xazakhatans)
PERIODICAL: Byulleten' Maskovskoge Obshchestva Ispytateley Prirody, Otdel
Geologicheskiyq 19579 # 29 PP 152-153 (USSR)
ABSTRACT: The Karamendinakaya and Tercktinskays. granitoid intrusions are
located in the medium flow of the Sary-su Pver. The area of
the Karamendinskaya massif is about 700 km and that of the Te-
rektinskaya is about.540 km2.
In the tectonic respect the both massifs belong to horstantic-
lines bearing the same names as intrusions.
Their age was estimated by Velin as not later than Middle-
Devonian.
Both of the intrusions are similar In petrographic composition,
regularities of formation and phenomena of tourmalinization.
Card 1/2 No references are cited.

5-2-19,435
TITLEs Karamendinskays and Terektinskays. Intrusions of Granitolds In
Kazakhstan (Karamendinskaya i Terektinskaya intruzii granitoidov
v Kazakhatane)
ASSOCIATIONi Moskva Society of Investigators of Nature
PRESENTED BYt
SUBMITTEDt -On 6 December 1956
AVAILABLEt At the Library of Congress,
Card 2/2

ectral absorption.cur7as of biotite from granitoids of the rdddle
Sp - Test. Kosk. tm. ir. blol.,
Ishim Ulley In northern X~zakhstane Se
pochv., geol., geog. 12 no*-4:189-193 157. (UM 1125)
1, 'Kafedra petrografij Xoskovskogo gosudaretvannogo universiteta.
(Ishim Valiq,-Biotite-Spectra)

SOBOM, R.N.; YMLITANSNXO,,
Age of granitoid intrusions in the Sary-su-Tengiz upland.
Sov. geol. no.62:154-157 157. NM 11:6)
l.Koskovskiy gosudarstveuW universitat im, MoVe Lomonosova,
(Kazakhstan--Rocks, Igneous) '

YIDMIYANEM, F.F.
Mesozoic basalts and dolerites in the Ishim Valley (northern
Kazakhstan). Biul.HDIP.Otd-geol. 34 no.41156 Jl,:Ag (159.
MIRA 13;8)
(Ishim Valle7--Basalt)
(Ishim Valle7--Dolerites)

MWLI%OUKOs POF6
ntral
vein rocks of certain.graintoid intrusions in northern and ce
Kasakhatan, Biul, MOIF, Otd. geol. 34 no.6:134 N-D '59-
(MIRA 14:3)
(Kazakhstan-Rocks, igneous)

---- -- --- r- - ------ -- ----- -
~Pde ~(~ver~nyy Kazakhstan)---- -
Geology of the Dallnenskiy granite aassif (northern Kazakhstan).
Vest.Mosk.un.SerA Geol. 15 no.W3-23 160. (Km 1414)
1. Kafedra petrografii Moskovskogo univeralteta.
(Dallnenakiy nassif (Northern Kazakhstan)--C;eology, SIructural)

YDMIYANENKOP P*F*
petrography of granitoida in the Sary-Su-Tengiz waterohed of central
Kazakhstan. Biul.MOIP.Otd.gool. 35 no.2sl52-153 Mr-Ap 160.
(MIRA 14:4)
(Kazakhstan-Granite)

~~t ~,,-ak3~WA
YENELIYANFMO, P&F~
Potash feldspars in the Devonian granitoids of the Sary-mi-Tongiz
vatershed (central Kazakhstan). Vast e Hook suneSere 4: Geol, 16 n,&3;
"-50 MY-Je #61. (KML 1416)
2, Kafedra petrografii Moskovskogo univeraitatao
I (Kazakhstan-Feldspar)

YFMM?YANENKO,,Yladislav,Georgiyevich, inzh.
Contribution to the theory of a'frequency transducer based
on silicon stabilizers* Izv, VY8. Ucheb. zav.; elektromekh.
7 no.2:253-258 164. (MIRA 17:4)

KOFISV-DVORNIXGVP V.S.; XEMELYANEEKO., F.F.; FETROVA, M.A.
Magmatic activity in the Sax7-Su-Tengiz vater parting (central
Kazakh tan). BiuLMOIF.Otd,geol. 36 no.WO1-102 N-D 861,,
(MBA 15 s7)
(Kazakhstan--Geology,, Structural)

YWL17ANF,NKOj P.V.; NESMEYANOVp S.A.
- ---------
Genotypal igneous fczations In the middle labim Valle7.
Sov.geol. 5 no.6:121-326 ~e 162. (MIRA 15:11)
1. Mookovskiy ooudaratvennyy univeroitat im, M,,V.Lomonoaova.
fIshim Valley-Rockes, Igneous)

KOPTEV-DVOFUIIKOV, V.S.; YEMELIYANENKOI P.F,; PETROVA, M.Aq
Effusive and intrusive tomplexes in the western part of the
- Sary-Su-Tengiz watershed. Sov. geol. 6 no.7:24-51 JTI 163.
(MIRA 16:8)
1. MookovsMy gosudaretvennyy universitat imeni Iomonosava.
f

,-YEMEL'YANENKO,,P.F.)- KARZANOVA, A.Ya.1 KUZNETSOV, Ye.A.
Biotites and amphiboles of t~je Akkuduk intninive (rAzakhotan).
Vast. Moak. un. Ser. 41 Gool. 19 no.3146-54 My-JO 164.
(MIRA 17:12)
1. Kafedra, petrografti Mookovokogo universiteta.
I

GORBACHEVA. T.B.j YEMELYANENKO, P.F.
-----------
Potash feldspar in the Inagli intrusive (Aldan P2ateau)o Veat.Yosk.un.
Ser-O Gool. 19 no.5:47-54 S-0 164. (MIRA 17:12)
1. Kafedra. dimmicheskoy geologli Moskovskogo universiteta.

137-58-4-6528
Translation from; Referativnyy zhurnal, Metallurgiya, 1958, Nr 4, p 29 (USSR)
AUTHORS: YemelLya_=nka,-P-M., Makovskiy, V.A.
TITLE: Measuring the Temperature of the Roof of an Open-hearth
Furnace (Izmereniye temperatury svoda martenovskoy pechi)
PERIODICAL: Tr. Donetsk. otd. Nauchno-tekhn. o-va chernoy metal-
lurgii, 1957, Nr 5, pp 55-68
ABSTRACT:
Card 1/1
Established formulas are used to calculate the errors in
measuring the temperature of the roof of an open-hearth furn-
ace (OF) by means of optical and radiation pyrometers (RP).
A system of measurement of roof temperature by RP employ-
ing sighting through a hole in the front wall of the OF is recom-
mended. In addition, a protective tuyere to assure normal
functioning of the RP, an efficiently-designed sighting aper-
ture, and a measuring circuit employing two RP and a single
electronic potentiometer with automatic switching of either RP
to the potentiometer in accordance with the direction of the
flame, and the employment of a time relay connected with the
throw-over circuit, are provided.
1. Furnace--Temperature--Measurement
cations
M. L.
2. Pyrometera--Appli-

YE14EL'YANEIUM, P. T.
~-;R
0
IN U-Q:MW
w
MC~D I
Metallurgy see ILC

YJDMIYAIMIKO, V. -1
I*WCiI.II progressive Sov.sTiAz-
Once deficient, now in the number of the 6CM 7 '. 8)
2 no.12:11 D 152.
1. Chlen Prezidiuma Severo-Ooetinskogo obkome profsoyusa ra-
botnikov Mazi.
(Telecommunication)

TIMIYAIMMO. vo,_,i.n,s,ho
- ~ - w~-,--.
Repairing differential carriers. Avt. transp. 37 no.72,'21
D '59. (Notortruoks-Transmission devices) (MIRA 1313)

1(O); 19(0) PHASE I BOOK KOWrMION &W13269
Glukhov, M.K., M.M* Danllevskly, P,G. Yermakov, V*Bo Yemellysmanko
henko, V., Shukayev.
V.M. Inzovoy-Shevchenko, P.P. plyac
Voyenno-vozdushnM oily (Air Force) Moscow, Voyen. izd-vo M-va obor, SSSR,
1959. 202 p. (Series, Biblioteka ofitsera) No. of copies printed not given.
General Ed.: M.K. Glukhov, Docent, General-Major of the Air Force; FAS,:
A.So Mirnyy, Colonel, and N*P. Gordeyev, Colonel, (rat.); Tech. Ed,-.
M.A, Strelfnikova.
PURME: The book is intended for military personnel, It will be of Interest
to EL11 those interested in the role of air power in modern warfare,
CGVERAGE: The book surveys. the history of the Soviet Air Force and discusses
its organizational set-up, types of aircraft, combat characteristics, tasks,
and armament. The role of aviation in modern military strategy is analyzed.
and the cooperation necessary between air, ground, and naval forces defined.
Future prospects of development of Soviet aviation are outlined. Some
attention is paid to the development and possible use of nuclear weapons by
the Air Force and in anti-aircraft defense. Photos and specifications of the
Card 1/5

Air Force
SOV/3269
folloving Soviet aircraft are given: AN-10 turboprop transport aircraft,
Tu-220 transport Jet., MI-6 turboprop hellcopter,, Yak-24 two-engined helicopter,
MIA heAcopter,, Tu-104 turbojet transport aircraftp 11-14 transport aircraft,
Alff-35 (Fe-35) transport aircraft, MiG-15;ble fighter,, Tu-14 bomber, Ba-6
bomt-er., 11-2B bomber, Pe-2 bomber,, DB-3F (11-4) bomber.. 11-10 fighter,
1a-5 fighter,, and the Yak-3 fighter, There axe 40 Soviet references.
TAME OF CONZMM*
Introduction
3
Ch. 1. Short Historical Outline of the Development of Aviation 5
Ch. 2. Aircraft, Their Construction, Armament, Equipment, and Combat Features 34
Classification and types of aircraft and engines 34
Combat features of aircraft 40
Armament of aircraft 42
Special equipment of aircraft 48
Ch- 3. Purpose, Organizational Set-up, and Bases of the Air Force 50
Card 2/ 5

Air Force
SOV13269
Role and purpose of air forces 50
Combat characteristics of air forces 54
General tasks 6f air forces 56
Kind of aircraft and their use 57
Types of military aviation and their specific assignments 59
organizational set-uP of individual branches of the Air Force 62
Air bases of air forces 63
Ch. 4. Bombardment Aviation 67
Principles of combat use 67
Combat operations of bombardment aviation according to target 76
Special features of combat operation of bombardment aviation under difficult
meteorological conditions and by night 86
Special features of bomber c m -and 88
Cb. 5. Torpedo-carrying Aviation and Aviation for Anti-naval and Anti-submarine
Bombing 90
Torpedo bombers 90
'Anti-naval and anti-submarine bombers 95
Card 3/5

Air Force WV13259
Cb. ~. Combat Aviation [Fighters] 102
Principles of combat ude of fighters 102
Combat operations of fighters accordiLg to specific tanks n3
Special features of combat operation of fighters under difficult meteor-
ological conditions and by night 120
,Special features of fighter command and the organizational aspect of
cooperation with anti-aircraft defense 121
Ch, 7. R~connalssance Aviation 123
Spotting and reconnaissance aviation
135
Air reconnaissance of targets 136
Ch, 8. Auxiliary Aviation 145
Development of auxiliary aviation and experience from its use 145
ftxther development of anxiliary aviation, its means and combat equipment 151
Principles of using auxiliary (transport, sanitary., utility] aviation in
modern var 163
Ch, 9, Combat Operations and Other Activities of Aviation 170
General principles 170
card 4/5

Air Force
SOV13265
Tasks of aviation in comt-at and in ather opentions
Means of combat activity
Combat formations
Preparations for and execution of acombat mission
Fulfilment of combat mission of various air units
Cooperation of aviation with ground forces and other branches of the
armed -forces
Aviation co=and
Conclusions
Development of aircraft technology
Bibliography
AvAnABiz: Library of Congress
Card 5/5
172
I
177
178
3.81
183
185
2.88
189
200
AC/jb
2-29-60

_YEW,!jWMO,_Yhgj2iy Dorioovich- -po.1kovnlk,, Geroy- Sovetokogo Soym
My comradeg-in-ams fought hem, AYA koem., 1+5 no.2s66-qZ F 163.
(KIRA 16:2)
Mild Mari, 1939-1945-Aerial operations)

3/144/62/000/005/003/005
D289/D308
AUTHOR: Yemellyanenko, V.G.#. Engineer
TITLE: Theory of frequency sensitive pick-up constructed from
ferromagnetic material with rectangular hysteresis
loop
PERIODICAL: Izvestiya vysshikh uchebnykh zav~dcniy- Elektromekha-
nika, no. 5, 1962, 512 - 520
TEXT: The device consists of peaking transformer feeding a bridge
connected rectifier. The basic principle is the fact that the mean
rectified emf output from an iron-cored coil carrying current is
413f(thaxI where T/ - number of turns;'f - frequency; "Max - mAx-flux.
The output does not depend on the form of the flux but only on the
maximum value. The basic element of the apparatus Is the peaking
transformer having toroidal core of material with rectangular hy.9-
teresis loop. The primary winding of the transformer is heavily sa-
turated at normal input voltages so that the curr6-it is practically
constant with respect'to the applied voltage and depends on frequen-
Ca-rd 1/2

S/144/62/000/005/003/005
Theory of frequency sensitive ... D289/D308
cy only. Operation without load is corrected by compensating the
reactive component of the current with reactance for narrow frequen-
cy band operation and with resistance, for wide frequency band ope-
ration. B/H curve is approximated by B = 2Bh/-. tan-1 H/H where B
41 0 h
- saturation density-, H - field at half of the saturation densityo
The author proves that he output of the device is proportional to
frequency and evaluates the degree of variation of output with the
change of magnetizing current. The operation of the apparatus on -
load is analyzed and equations for flux and secondary rectified cur-
rent are deduced, Temperature compensation of the rectified output
is obtained with resistors. Proportionality of output to frequency
and independence from applied voltage in the range of 400-2000 volts
is shown in a graph for the range of 20-60 C/S.
SUBMITTED: December 18p 1961
Card 2/2

3/1 44/63/0W/W2/W2/C04
A055/A126
vdl S V
AUTHOR: Yomellyanenko, .0.
....................................
TITLE: Frequency pickups and pointer-type frequency motors designed on the'
basis of materials with a rectangular magnetic loop
PBRIODICALi' Elektromekhanika, no. 2, 1963, 237 - 245
TEXT. In an earlier article (Blektromakhanikal no. 5,! 1962), the author
described a frequency pickup whose design is based on the use of materials with
a rectangular magnetic loop and of the specifl-3 properties of the peak trans-
former working in the heavy-saturation condition. The precision of this pickup
is impaired by the fluctuations in the voltage applied to its input, these fluc-
tuations affecting the mean value of the rectified emf and current. In the ;ms-
ant article, the author describes a method permitting the elimination of this
defect by insex-ting a choke in the circuit of the secondary transformer winding.
Starting from the ecriation
dib d "2 eh
w2 __'. - ~qh 2 (r2 + rch -k r3~+ rload), (1)
dt
Card'1/3

(1//144/63/000/002/002/004
Prequency pickups and pointer-type frequency .... A055/A126
where 4T? and 41)ch are respectively the instantaneous values of the flux in the
transformer core and the choke, r2 and rch are respectively the resistances of
the secondary winding and the choke, rjoad is the equivalent resistance of the
rectifier bridge and the pickup load circuit (w being the number of turns), he
explains analytically (under some simplifying assumptions) the regulating effect
-Of the choke. Integrating (1) and replacing i:D and 4)ch by well-k-nown expres-
sions, he obtains:
4f
I (IV (3)
mean rect. (r2 + r + r3 + rjoad) - 2 max ch max),
ch
where 2 max'- w2 (1) max and V ch max - Wch -15ch m,,_, are respectively the
amplitudes of the secondary winding and chdIke flux linkage. Assuming t1tat
1
r (V 2 max being the equivalent value of the amplitude of
1 ch max 2 max
the secondary winding flux linkage, account taken of the choke winding), the fi-
nal formula Is:
-V2 I 1 11
re ct. Batt, w2 f ELrctg HO lav Wi arotg 8.35 jo-5 wc
av h]i5)
:C
ard.2/3

S/L44/63/000/002./002/004
Frequency pickups and pointer-type frequency .... A055/A126
where 4~ sat Is Ithe saturation flux, lav is the average magnetic line length,
No Is the base field strength. This formula explains the regulating effect of
the choke. Three curves show Imean rect. - f WO for wch equal respective-
ly-to 0, 100 and 150. An appropriate choice of wch permits a practically com-
plete elimination of the effect of the Input voltage fluctflations. This essen-
tial part"Of the article is followed by a brief examination of the pickup errors
due to the ambient temperature fluctuations and of some possibilities of temper-
ature autocompensation. Two pointer-type frequency metera using the described
pickup are suggested and their circuit diagrams are reproduced. There are 8
figures.
SUBMITTEW April 21, 1962
Card 3/3

ACCESSION NR. AP4025744 S/0144/64/000/002/0$53/0258
AUTHOR: Yemellyananko, Vladislav Georgiyevich (Engineer)
TITLE: Theory of, YHYFCMV-4tabilivolt -type frequency sensor
A
Elektroxnekhanika, no. 2, 1964, Z53-256
SOURCE:IVUZ.
jrOPICf TAGS: stabilivolt, voltage stabilization, sensor, frequency sensor,
-808 stabilivolt
Olicon stabilivolt, D
ABSTRACT: An Italian circuit of a erniconductor -diode frequency meter
(Gasparini, F., Merigliano, L. Frequenziometro a diodo Zener. L'Energia
Elettrica, 1959, no. 11) was used
-for developing a now frequency sensor with
-808, D-813 Soviet-made silicon stabilivolts. lAboratory hookups with both
wideband (20-55 cps) and narrow.-band (45-55 cps) frequency characteristics were
tested. The characteris tics are claimed to be independent of the applied voltage.
Fundamental formulas are discussed. Orig. art. has: 6 figures and 16 fornxilas,
ASSOCIATION: none
SUBMITTED: 26W62 DA;,TE ACQ: 16Apr64 ENCL: 00
SUB CODXt W NO REr SOV: 002 OTHER: 002
CWd

TEMIYANENKO, V,Ya.2 inzh,.
Swin na Iboom which can be attached to a standard Belf-propelUd
power shovel... Stroi..i-dor.,j4aBb. 7 no.12sl8-19 D 162.
(KM 16:1)
(Haisting nachinery)

I
- WEL' , YANZNKU P Yo. . inzh.-._._ -
Repairing the countershaft, of the ZIlo*164 ge4rbox. Avt.trawp.
40 n0-503-34 MY 16Z, OURA 15:5)
(Motor vehiales-Transmianion devices)
0

4
YH-1[,VYANI..'NKOj Ye. 1.
Cand Med Sci - (diBs) "Study of several immunological indices
in rheumatism as partial manifestation of coll.agenosis." Kharl-
kov, 1961. 16 pp; (Ministry of Public Health Ukrainian SSR,
KharIkov State Med Inst); 200 copies; price not given: (KL, 7-61
sup, 258)

N
- -- -- - --- - ---- - - -- - --- - - ---- -- --- --- - -- - - - -- ---- - . -- -- - - - - -- - - ---- -- - - - - - - - --
KHAN.. B.Kh.1 TARUOVp Ye*D*j YLMELILU&Mop ruoG,
-Improving the tachw.109Y Of cOnvaker steel deoxldatlon. Lit.
PrOizv. no-11:44,45 N 161. (MIRA 14:10) ,
(Steel-Metallurgy)

PROKHOUN'Ko, K.K. kand.teklin.naul-; YD-lEL'YAjjEj;KO
VVMEIZSKIY: , i YU,G.), JlAKOjjFCjjtTyy
V. S. , N. F';
Production of stain.1088 e uso of high-carbon ferrochromium.
Met.1 gornorud. prom. no.l36te:2OOl-2w3ithN-tDh 163. (MIRA 18A)

ZABAWYEV, Yu.I.; SMOLYAKOV, V.F.; VIOL'FOVICH, M.S.; KAGANOVSKIY, G.P.;
STETSENKO, N.A.; Yu.G.; MEDOVAR, B.I., doktor
tekhn. nauk; IATASH, Yu.v.,, kand. tekhn. nauk
Improving the macrostructure of electric-slag refined steel.
Met. i gornorud. prom. no.2:24-26 Mr-Ap 165.
(14 r RA 18: 5)

ACCE3110N NRt AT300216?
AFFTCIASD JV1JG
:!AUTHORSt Prokhoromo, X. K.;bviatunovt A.-4(decoased)j vvodon!3~iy' V. S.;
i VorkhovtaeWT-Z,- . lIzanonkol Yu. a, I Httkoncchflyty' U. F.-L ~' &-T~U-W'5~ -V. r..
I YMMO !L
TITLEs Technological Lmprovenants In malting and pcuring-pf staineas stecl
SOUMM AN Ukr RSR. Viddil tokhftichnykh nauk. Voprosy* proizvodstva stali, no*
19t 1963o 51-64
TOPIC TAGSt stainless steel, technological improvenent, malting, pouring
:ABSTRACT: The old methods of malting and pouring steel are criticized. New
:procedures used in both processes and the results obtained are described and dis-
I
.cussed. The furnace charge usou in the improved method of malting consisted of
30-70% scrap stool ~~tai less carbon steel low in F and carbon ferrochrome). The
total coptent of- CpLnUnd Si*n the charge was 0.3-0.5%, 17-1~.%, and O.h% re;-
apective4. Oxygen was blown in under a pressure of 15 atm., after which the metal
temperature was raised to 1850-IbBOC. As a result, tho carbon content was lowered
to 0.05% and that of Gr to 12.9%. The slae formed was fluid, homogeneous, and
contained h8.6% Cr203' The amount of silicochrome, which was Introduced at the
end of blowing, wav calculated in such a way that the =3tal contained 3% Si and
Card_ 1/2

L 15577-63
ACCESS1011 NRi AT3002167 -6
of lime by weight of watal, After 10 minutes 15% (wt) of blooms ver4 intro-
duced for the cooling purpoS03* The now cmethodepro~ldea for the melting of
stainless steel containing a minimum of 0.06% carboh by using carbon ferrochrome
'or a 100% high-chromium zcrap (without the use of adrbon-free ferrachrome). The
improved method of pouring is based on the formation of a slag layer on the open
surface of the ingot, proventine metal oxidation in the ingot. Moreover, the
liquid slag solidifies on the ingot walla, thus serving as a lubricant that
protects the walls. it also dissolves floating nonmetallic inclusions and prevents
jormation of a coarse crust on the ingot surface by moderating the surface cooling
jof the metal, Orig. art. hast 4 tables and 4 f1gureso
'ASSOCIATIONt nona
SUBMITTEDs 00 DATE AN s, MOO ENCLI 00
SUB CODE-.. IM 00).'
NFO [W SOVi 004 OTHF.Rt
Xard 414

L 18061-63 EWP(q)/Ewr(m)/j3Ds
ACCESSIM 14R- -4T3002169
AFFTC/ASID Pad 4DIWIJG
S/2G,2jA?/OCO/CO9/CO73/CO?8
60
AITTHORS,_']~tm~ejt Ln2LkOL yu. G.; Prok~orenko, X. Y 1 7Vutina, A. yo.
TITLE: Electrolytic extraction of nonmetallic irclusions 'from stoinler's steel tk
WtRGE: IN Ukr RSR. Viddil tek1michnykh naul'. Vorros:~ p--oizvodstva st--U, no. 9,
:1963P '73-78
TOPIC VDS: stainless steel, nonmetallic inclusion , electrolytic extraction
ARSTRACT: A new method for seperatlnc7 crx"hideVInclusions from steel is discussed
In detail. The method is based on the principle of a simultaneous solution of metal
nnd enrbide, wHe,i can be nchieved by t, rroper choiee of the electrolyte commosiVon.
A scheme for the device used in the exper3rent is presented, and the wor)dng, pro-
cedure is e=lsined. This method is chprnateri 7C-d by the full preservation of the
oxide fraction ani by the solution of cArbides ccntnined in steel. Tho enrbido
solution occurs b3cause of the polsri7.,tion o'P met-n3lic surfqco and an increase in
the nnade possivntion (which does not if 14ect the cf-irbides) . The :--thor concludes
Ahat the new method provides a rapid nnd nneurnte dotarrdnAtion of oydde inclusions
in stainless steel. OrI7. nrt. h-is: I Vible and 3 figures.
Card 1/2

ACCESSM NR: AT3002169
ASSOCTATION: nona
SUBMITTED: 00 DATE ACQ: lOYny63
,SUB CODE: YL NO REF SOll.- 001
Er"'CL., 00
07'HER: 000
Card 2)2

L 63975-45 MJWIJD
!ACCESSION M AP5014242 UR/0383/65/000/002/0024/0026
.669.187.6 44,5 6-
AUTHORt ZabalMyev. Yu. M. S.t-Ksgan
I malyakov, V. F:: Vullfovich P.j
My
Yu G , Hadov I. podtW of' tc hn es 1 f-
k* H L; _~,t ar, B.
sciences);,LataW' ru. eMnTca J.. 6)
fy, 0
iTITM Improving the macrostructure of electroslag steals
SOURCE t NotallurgLchaskaya I gornorudnria promyshlennost', no, 2, 1965, 24-26
TOPIC TAGM electroslag meltintj steel
ABSTRACT- Crystallization bands (layere)--regions which am more resistant to etch-
Ing than the base metal--are observed In the macrostructure of ball bearing and
structural steels melted by the olectroalng method using ARM flux. I~ the Ingot,
these layers reproduce the contour of the, bottom of the metal bath,,and In rolled
products they appear as rings. These crystallikation.layere are caused by sh&M
changes In the rate at whiih the Metallization front advances due to disturbance
of the thermal balance between the metal and slag baths. The author* studied the'
effect of substituting AN-291 flux for ANF-G. l2Kh2K4Aj 18MMA, SMIS, GhKh1 S

k
L 3975-65
ACCESSIC" 011,Z AP1014142
and 30XhGSNAIsteals were melted. The working current was reduced by 15-201 and
rate of flux consumption was increased by 15-25% over that of ARM. The macro-
structure of forged and rolled specimens (circular and square, 100-1S0 mm) was dense
an& uniform without traces of layered crystallization. Contamination by nonspetallid
inclusions Is about the same with both fluxes. The elimination of the crystalliza-
tion layers when AN-291 flux in used Is due.to the higher electrical resistance of
"his fluxwhich makes hotter smelting possible, Increasing the heat content (entbal-
py) and consequently the thermal Inertia of the malting 'tons. This effect acts as
a Ilihokell which smooths out fluctuations In electrical conditions and results In a
more uniform Ingot. Orig. art. has 2 figures, 3 tables.
ASSOCIATIONs none
SUBKIMDt 00 ENCP 00 sue CODE1. NN
No Rcr Govi 002 OTHERt 000
Card 2/2
7

ISHCHUK,, N.Ya.p kand. tpkhn#-nauk; PROKHORENKO,, K,K,,, kand. tekhn.
na- i YE)OLOYANEM, Yu;G., inzh.
Using exothermiq mixtures to obtain slag during steel
pouring. Met. i gornorud. prom. no-5:72-75 S-0 163.
(MIRA 161l1)
1, Institut ispoltzovaniya gaza AN UkrSSR.

CUM:
AUTHOR: Faybisovich, L. I.; Varakin,.N. I. Larichkin, M. S.; Medovar, B. I
.; lemel YanenkoTU. G.; Maksimov, 1. P.; Kovall,-6-v .,;.Akulinin, M. Ai
Latash, Yi. V I
OR G: no ne
rotor steel
TITLE: quality of heavy forgings of 36KhHlMFAR electroslar
SOURCE: Metallurgicheskaya L gornorudnaya proryshlennost', no. 2, 1966, 35-39
TOPIC TAbd: steel forging, steel, no.nmetallic inclusion, britt7nise, temper
brittleness
ABSTRACT: The study deals with the effect of electroslag m on the quality of
Vacuum-degassed and nondegassed open-hearth steel. Forgings of 36KhNIMFAR steel,
obtained from electroslag ingots weighing 13 tons, have a compact structure and a
homogeneous chemical- composition. The content of sulfur, gas, and nonmetallic in-
clusions in them is considerably lower than in similar forgings from metal made the'
conventional way. The mechanical properties of the remelt metal are characterized
by hiSh etAble values in the length and cross section of the forging both in longi-
tudinal and diametrical directions. Electroslag melicd 36KhNlKrAR steel does not
ipossese a tendency to temper brittleness. Its nul ductility )rransition temperature
'is belov -70C. Orig. art. has: 5 figures and 4 't_aTres_- (NT)
OUR CODE: SUBM DAM none/ ORIG REF: 003
uDc: 669-13:658.562

SUSHKO, A.M.; YEHRLIYANBHKO, S.A.
Mercurometrie determination of table salt in food prodacts.
Soob.Prim.otd.VUO nO-3:73-77 157. (MIRA 13:6)
1. Kafedra khimil D&llnovostochnogo tekbnichookogo institute,
rybnor promVehlennoiti i khozyaystya.
(Salt) (Mercury nitrate) (Food-Analysis)

SUOHKO, A.M.; lumme Z.A..
Tryptic activity of the sperm whale pancreas. Soob.Frim.
otd.VKHO no-3:135-144 '57. (MIU 13.- 6)
1. KAfedra khimii Dallnevostochnogo tekhnichoskogo instituta
rybnoy pronVehlennosti i khozyaystva,
(Trypsin) (Pancreas) (Whales)

LASKINA,, Ye.D.; SIMANOVSKAYA., E.A.; BELOV., V.N.', BYCHKOVA, MI.;
SHILINA, R.F.; MMLIYAIIEBKO Z_T__ MIKKArLDVA, Z.V.
Intermediate products of the synthesis of odorous-substances.
Report No.10: Preparation of guaiacol, guiithol,'veratrole, and
o-diethoiUrbenzene from pyrocatechin. Trudy VNIISfiDV no.5:25-30
,61. (MIRA 14:10)
(Piparonai)

ORLOV, V.; YEMITANOV, A._
Devices for repairing storage batteries. Avt.transp. 35 no.9:16-17
8 '57- (MIRA 10:10)
(Automobiles-Batteries)

r - ~ - r" -
YXIGLIYA11OVs A. (Ufa).
~An ii~lt~aehortvave radio station. Radio no.1:23-26 A 15B.
(Amteur radio stations) (MIRA 11:1)
I