JPRS ID: 9195 USSR REPORT ENERGY

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JPRS L/9033
15 April 1980
USSR Report
PHYSICS AND MATHEMATICS
(FOUO 4/80)
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i Vi% Vi & i~r~ vv- v- +
JPRS L/9033
15 April 1980
USSR REPORT
PHYSICS AND MATHEMATICS -
(FOUO 4/so) -
T'his serial publication contains articles, abetracts of articles and newa
itema from USSR scientific and technical journals on the apecific sublects
reflected in the table of contents.
_ Photoreproductians of fore ign- language souroes may be obtained from the _
P'hotAduplication Service, Library of Congress, Washington, D.C. 20540.
Requeots should pravide adequate identification both as to the eource and
the individual articie(s) desired.
_ CONTENTS PAGE
PHYSICS
ACOUSTICS
Principles of Hydroacoustics
(Izabella Aleksandrovaa Rumyanskaya; OSNOVY GIROAKUSTIKI, -
_ 1979) 1
CRYSTALS AND SEMICONDUCTORS
Growth and Alloying of Semiconducting Crystals and Films.
Part 1.
(ROST I LEGIROVANIYE POLUPROVODNIKOVYKH KRISTALLOV I
PLENOK, CHAST' 1, 1977) 5
Kinetics of Growth and Diasolution of Crystal$ -
. (Yevgeniy Borisovich Treybus; KINETIKA ROSTA I
RAST110RENIYA KRISTALLGV, 1979) 11
ELECTRICITY AND MAGNETISM
Collective Ion A.cceleration by Electron Ringe
(Vladislav Pavlovich Sarantsev, Elkuno Avrumovich Perel'-
shteyn.; KOLLEKTIVNOYE USKORENIYE IONOV ELEKTROt7NYMI
- KOL'TSAMI, 1979) 13 - a- [III - USSR - 21H S&T FOUO]
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CONTENTS (Continued)
LASERS AND MASERS
Page
On Converting the Radiation of a Laser Having an Unetable
Reaonator With the Help of Conical Optice
(S.I. Zavgorodneva, et al; KVANTOVAYA ELEKTRONIKA,
Jan 80) 16
-
Continuous-Wave Laser RadiaziazY Power Stabilizers With an
Exteraal Control Element ~(S.V. Andreyev, et al; KVANTOVAYA ELEKTRONIKA, Jan 80).. 23 -
Laeer Radiation Absorption in a Crater in a Metallic Target
~ (A.Ya. Vorob'yevq V.M. Ruz'michev; RVANTOVAYA ELEKTRONIKA,
Jan 80) 35
NUCLEAR PHYSICS
, Nuclear Physics Lecturea Ptiblished
(FIZIKA VYSORIRH ENERGIY, 1979) 41
Probleme in Atomic Science and Techrology
(Andranik Melkonovich Petros'ymnts; PROBLEMY ATOMNOY _
NAUKI I TEKMIKI, 1979) 42
~ OPTICS AND SPECTROSCOPY
High-Resolution Photomaterials for Holography and Processes of _
Treating Them -
(Niko?ay Ivaaovich Kirillov; VYSOKORAZRESHAYUSHCHIYE ~
FOTOMATERIALY DLYA GOLOGRAFII I PROTSESSY IKH OBRABOTKI,
1979) 47
Abaorptior. Coeffiaients of Mirror Surfacea of Intermetallic
Compounds at Wave Length k a 10.6/km _
(V.V. Apollonov, et a1; KVANtOVAYA ELEKTROIJIKA, Jan 80). 50
SUPERCONDUCTIVITY `
Low-Temperatuxe Phyaics Reaearch
(B.T. Geylikman; ISSLEDOVANIYA PG FIZIKE NIZKIKH TEMPERATUR, -
- 1979) 56 -
Monograph Describes Superion Conductois
(Yu. Ya Gurevich, SIJPERIONI3XYE PROVODNIKI, No 2, 1980).. 61 .
Bibliography on Vacuum Phyeics, Basic and Applied Supex-
conductivity (BIBLIOGRAFICHESKIY UKAZATEL' RABOT PO VAKUUMU I SVERKH-
PROVODIMOSTI, 1979) 63
=b- s
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CONTENTS (Continued) PBge
THEORETICAL PHYSICS
Investigations in Supersonfc Aerodyaamica
(ISSLEDOVANIYA PO GIPERZVIJKOVOY AERODINAMIKE, 1978).... 67
Oscillatory Relaxation of Molecules and Gas-Dynamic Lasers
(ROLEBATEL'NAYA RELAKSATSIYA MOLEKUL T vAZODINAMICHESKIYE
LAZERNY, 1979) 69
Direct Numsrical Modeling of Gas Flaw
(O.M. Belotserkovskiy; PRYAMOYE CHISLENNOYE MODELIROVANIYE
TECHENIY GAZA, 1978) 73
MATHEMATICS
PUBLICATIONS
New Volume of Papers in Mathematical Physics
(MATEMATICHESKAYA FIZIKA, Iseue 26, 1979) 76
~
-c-
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PHYSICS
ACOUSTICS
tmc 681.883(07 )
PR INC IPLES OF HYDR QAC OIISTICS
Leningrad OBNOVY GIDROAKTrSTIKI in Ruasian 1979 pp 2-3, 212-213,
215-216
CAnnotation forerrord table of contents and beok advertise-
meats fram lhe book "bsnavy Gidroakustiki" by Izabella Aleksan<
- drovna Rumgnskaya Izdatel'stvo Sudostro eniye, sigaied to press
2 November 1978, ~,200 copies, 216 pngesi
[ Text ) ANNOTAT ION
In thia teatbook the author explains the basic questions relat-
ed to the theorq of the paropagation, emission and reception of
acoustic vavea. 3he gives speciel attention to features of the
- propagation of hydroecoustic signals under the conditions en-
" countered in a marine medinm. She also discusses the princi-
ples of hydrophone directi.on-finding and echo direction-Pinding.
This teatbook is intended for tekhnikums graduatiag specialists
in hydroacovstics, but it can.also be uaed as a teaching aid
for students at higher technical educational institutions rrho
are specializing in this area.
- F OREWOftD
The content of this textbook is determined by the program oP
the course "Pr9.nciples of Iiydroacoustics."
- The author gfves an account of the basic problems in physical
- acoustics, discusses vibrations of inechanical systems, presents -
amethod uf electromechanical analogies that is Widelq used in
technical acoustics at the present time, and describes the fac-
- tors determining sotxnd propagation in the sea and the oparating
principles of shipborne hqdroacoustic equipment intended for _
dfrection-finding of noisemaking objects.
In her eaplication of the material, she gives particnlar atten-
tion to explaining the physics of the phenomena related to the
1
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processes under discussion so as to prepere the student .for the
study of other special coiirses such as KHydroacoustic Conve*t-
ers and Antennas,* "Hydroacoustic Stations" and "Hydroacouatlc
MeasLiTements."
~ The author considers it a pleasant duty to eApress her
grati-
- tude to Candidate of Technical Sciences Yu.F. Tarasyuk
and
Doc-
tor of_Technical Sciences A.L. Prostakov for reviewing
the
man-
uscript and for their vaiuable comments.
TAB LE OF C ONTENTS
_
Pgge
- Foreword. . . . . . . . . . . . . . . . . . . . . . . .
. .
3 .
Introduction . . . . . . . . . . . . . . . . . . . . . .
. .
4 \
- Chapter l. Phqsical Properties of an Elastic Medium; Th
e
- Acoustic Field . . . . . . . , , . , 0 . . .
. .
$
1. The Nature oP Sound . . . . . . . . . . . . . . .
~ ~
g
2. Basic Properties of an Elastic Medium . . . . . . .
. .
12 -
3. The Acoustic Field . . . . . . . . . . . . . . . . .
. .
14
Chapter 2. Propagation of Acoustic Waves. . . . . . . .
. .
25
4. Propagatioii of Plane Waves. . . . . . . . . , . . .
, .
25
_ 5. Propagation of Spherical Waves . . . . . . . . . . .
. .
34
- b. Interference by Traveling Waves . , . . . . . . . ,
. ,
)+p
7. Interference by Meeting Waves . . . . . . . . . . .
. .
45
8, Reflection and Refraction of Acoustic Waves Falling
Normally on an Interface Betxeen Mediums.

50
9. ReflACtion and Refraction of Acoustic Waves Falling
at
an Angle on an Interfece Between Mediums.

58 -
10. Diffraction . . . . . . . . . . . . . . . . . . . .
11. Scattering of Acoustic Waves by Bodies With F inite
. .
Di-
62
mens ion$ . . . . . . . . . . . . . . . . . . . . . .
. .
64
Chapter 3. Basic Intormation From Vibration Theory.

75 ~
12. The Harmonic Vibration Process . . . . . . . . . . .
. .
75 -
1 . Composition of Harmonic Vibrations. . . . . . . . .
~
80
1
. Group Velocity . . . . . . . . . . . . . . . . . . .
. .
. .
83
Chapter 4. Vibrations in Mechanical Systems
.
86
.
15. C1assifiCation oP Mechanical Systems. . . . . . . . . .
16. The V ibratory Process'in a Mechanical System With Con-
86
- centrated Coastants . . . . . . . . . . . . . . . ~ .
17. The Yibratorq Process in a Mechanical System With Dis-
87
tributed Conatants . . . . . . . . . . . . . . . . .
- 18. The Method of Electromechanical Analogies
. .

102
106
= Chapter 5. Emission of Acaustic Waves . . . . . . . . . . . 112
- 2
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19.
20.
Resistance to Emission of Plane and Spherical Waves ..P112
Resiatance tO Emission During Bmiasion by a Piston-T
e
_
= 21.
yp
Emitter and a Circular Plate . . . . . . . . . . . . . .
Aconstic PoMer of an Esitter
117
22.
. . . . . . . . . . e . . .
The Acoustic Field of Directional Emiasions
1,23
125
0
Cha
2
.
pter 6. Reception of Acouatic Waves. . . . . . . . . . .
Pressure on the Receiver's Surface
128
4
24.
. . . . . . . , , .
Reception of Composite Vibrations, The Receiver'a Fre
-
'
128
.
. . . . 0 . . �
quency Characteristic . . , . , .
135
Cha
25.
pter 7. Elements oP Physiological Aconstics.
Perception of Sound by the Human Hearing Or
ans
139
1
26.
g

The Maskiag Effect of S~da; The Binaural Effect
49
1~6
Chapter 8. Factors Determining the Propagation of Acoustic
27.
Waves in the Sea . . . . . . . . . . . . . . . .
Characteristics of the 3ea as a Sound-Conducting Medium
148
148
280
29.
Attenuation of Acoustic Waves . . . . . . . . . . , . .
Velocity of Propagation of Acoustic Wa
151
- 30.
ves
Refraction. .
155
31.
. . . . . . . . . . . . . . . . . . .
Geometric Operating Renge . . . . . . .
157
164
32.
. . . . . . . .
Marine Rewerberation . . . . . . . . . . . . . . .
167
33�
. . .
The Doppler Effect . . . . . . . . . . . . . . . . .
169
. .
= Chapter 9. Hydrophone Direction-Finding . . , , . , . .
34. Acoustic Field of a Ship and Methods for Reducin
Koise
171
1
1
- 35.
g
Hydrophone$ .
7
_ 36.
-
. . . . . . . . . . . . . . . . . . . . .
The Mazimal Method of Direction-Finding and the Purpose
176
37.
of the Electric Compenamtor . . . . . . . . . . . . . .
The Phase Aiethod of Direction-Finding , ,
182
1$6
8.
39e
. , . , , . ,
The Phase Amplitude Method of Direction-Finding
The Correlation Hethod of Direction-Findin
19p
1
g
93
Chapter 10. Echo Direction-Firlding . . . . . . . . . . . . .
40. Sonar Sets. . .
199
41.
. . . . . . . . . . . . . . . o . . . .
Basic Tactical and Technieal Parameters of Sonar Sets .
199
203
Appe
ndix 1 . . . .
.
.
. . . . . . . . . . . . . . . . . . .
209
APPe
ndix 2. . . .
. . . . . . . . . . . . . . . . . . . . .
209
Bibl
iography. . . . . .
. . . . . . . . . . . . . . . . . .
210
BOOK
ADYERTISEMENTS
THE LLECTRONIC KEY TO THE pCEAp
Leningrad ELEKTROIdNYY KI,ytrCg K OICEANU in Rusaian 1978 13 sheets
3
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PROSTAKOY, A. L,
-The author cerrelates a voluminous amount of material that re-
flects the present state and prospects for the development of a
_ variety of hydroacoustic equipment used in studying and master-
ing the rrorld ocean. He discusses the purpose, operating prin-
ciple and organization of hydroacoustic equipmeat for de s9-m-
tiong communication, telemetry, underwateP "seeing" with sound
and navigation, gives their general.ized characteristics, and
presents information on the outfitting of deep-water vessels
and scientific research and oceanographi.c ships.
This book is intended Por hydroacoustic specialists, as well as
specialists in other disciplines xho are working in the field
- of developing the xorld ocean, students at technical VUZ's and
everyone interested in new areas in the development of modern
technology.
PROCFSSING HYDROACQUSTIC INFORMATION ON SHIPBORNE DIGITAL CO
PUTERS
Leningrad OBRABOTKA GIDROAKUSTICHESKOY INFORMATSII NA SUDOVYKH
TSVM in Russian 1979 11 sheets
FtOKOTOV, S.P., and TITOV, M.S.
The authors give an account of inethods for processing hydro-
i'coustie (including te'emetric) inf'ormation on shipborne digi-
- tal computers that are widely used to solve applied problems of
modern hydroacoustics. They discuss in detail the question of
- organizing the input of hydroacoustic signals into digital com-
puters. They also present the resulta of research into the
identif ication of marine objects, the detection of hydro-
acoustic signals against a background cf interference, and stu-
dies of the praperties of marine reverberation.
- This book is intended for scientific workera and engineera who
are specialists in the field of hydroacoustics and computer
technology, graduate students and students in the corresponding
- specialists, and everyone who is interested in the practical
= utilization of digital computers for processing random signals.
- COPYRIGHT: Izdatel'stvo "Sudostroyeniye," 1979
- (112-1174'j]
11746
CS 0 : 1862
4
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CRYSTALS AND SEMiCONDUCTORS
uDC 621.?15.5:542.91+592.3
GRdWTH AYD ALLOYING OF SEMICONDUCTING CRYSTALS AND FILMS. PAKI 1
Kovosibirsk ROST I LEGIROVANIYE POLUP'ROVODNIKOV'YKH IgtISTALLOV I
PIEATOK. CHAST' 1 in Russian 1977 pp 29 311-314
CAmnotation and table of contents from the collection of works
"aost i Legirovanlye Poluprovqdnikovykh Kristallov i Plenok.
Chast' 1," edite;i by Fedor Andreyeeich Kuznetsov doctor of
chemica], sciences, Institute of Inorgaaic Chemistry, Siberian
Department USSR Academy of Sciences Izdatel'stvo Nauka (Si-
_ berian Division), signed to press 6lpril 1977, 2,800 copies,
328 pages]
[Text) AIdNOTATION
This collection of works is the first of tvo books from materi-
els of the Fourth Al1-Union Symgosium on aroxtb. 8nd Synthesis
Processea in Semiconducting Crystals and Films. The authors
_ diacuss the general rules of the growth and diatribution of im-
purities during the cryatallizati4n af crystals and films from
a aaseous phase, Yrom a melt and from a solutiaa in a melt.
They also crnrer the chemical composition of impurities and new
aaethods for investigating irragularities in arqstals and films.
_ This book Mill be of interest for specialists in the field of
the synthesis aad grawth of semiaonductors, es well as those
-angaged in the technology of semiconductin,g instruments for
microelectronics.
TABLE OF CONTENTS
Page
From the Editor . . . . . . . . . . . . . . . . . . . . p . 3
Opening Address bq Academ3cian A.V. Nikolayev, c.hairnan of
the Organizing Committee. . . . . . . . . o . . . . . . . 4
Rules Governing the Growth and Distribution of I;opurities
During Crystallization Froffi a Gaseous Phaae
5
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=
Page
- Semiconducting Periodic Structures, Their Use, anci Methods
of Qbtaining Them (V.N. Maslcv) o . . . . . . . . . . . .
6
The Mechanism of Crqstal Growth fn a SiC14-H2 Syst6m (Dzh.
Nishizava, U. Kato, M. Shimbo). . . . . . . . . . .
- A St
d
f th
M
17
u
y o
e
acrokinetics of the Local Etching of Sili-
con by Sulfur Hexafluoride During the Course of the Pro-
cess (D.I. Bilenko, Yu.N, aalishnikova, L~B. Lopatina,
A.I. Smirnov, V.V. Tuchkavich, B.S. Yavich)
21
- Some Features oP the Synthesis ef MQnacrystalline Layers oP
Gal - lium Nitride (Ye. Butter) . . . . . . . . . . . . . . .
27
� R-T_3~ Phase Diagrams and the G*owth Mechanism of Mono-
crystals of Conpounds in Groups N-VI From Vapor (A,V.
Novoselova, V.P. Zlomanov, Ye.V. Masyakin, 0.1. Tananaye-
va)
~ On the Possibility of a Hydrogenless, Gas-Transport Method
30
= for Obtaining Silicon Nitride Films (F.A, Kuznetsov,
- Ya.M. Buzhdan, V.I. Belyry, T.P. Smirnova, A.A. Kocheshko-
va, V , S , Kravchenko ) . . . . . . . . . . . . . . . . . . .
_ Tnvestigation of the T'ransfer and Crystallization of
34
Gal_xIr~As fn a Ga-In-As-I-H Gas-Transport System (Yu.M.
Rumyantsev, Y.N. Demin, G.A. Kokovin, T.V. Fedorova).
41
Grdwing EFitaxial Layers of Indium Arsenide in an Open
Chleride Sqstem (G.A. Aleksandrova, Ye.N. Dorskaya, G.F.
- Lymar' L.V. Marchukov, A,Ye. 3hubin) . . . . . . . . . .
Growing 2nTe Manocrystals Alloyed With Isoelectron Impuri-
45
ties From the Second Group (S.I. Radautsan' A.Ye. Tsur-
- kan, V.I. Verlan) . . . . . . . . . . . . . . . . . . . .
Features o2' the Growth of Epitaxial Layers of ZnTe on Zinc-
50
_ ite Crystals (S.I. Radautsan, A.Ye. Tsurkan, P.G. Pas'ko,
L.V. Kicherman) . . . . . . . . . . . . . . . . . . . . .
51~.
On the Role of Prepara'tion of the Base Layer s' Surface for
the Lov-Temperatnre Epitaxy of Silicon (I.M. Skvortsov,
B.V. orion) . . . . . . . . . . . . . . . . . . . . . . .
58
- Effect of a Deviation From Stoichiometrq and the Concentra-
tion of Alloying Admixture on the Semiconductor-Metal
_ Junction in Vanadium Dio=ide (G, Oppermann) . . . . . . .
62
Theoretical Invostigation of the Appearance of Layer Thick-
ness Irregularities During Precipitation From a tiaseous
- Phase (V.P. .Leonov, YoG. Tsepilevich, F.A. Kuznetsov)
66
_ Fpitaxial Grob-th end the PropPrties of Varizonnyye [poasi-
bly Graded] Solid Solutions of GaAs-GaAsO 6i+P 6(V.N.
I~
Maslov A
L
h
O
Y
T~
A

.
.
upac
.
eva,
e.
r~robovt T.
. II
rskaya,
Y
s
~
e.
.
urawa ) . . . . . . . . . . . . . . . . . . . . . .
- Investigation of Transient Processes Du.^ing the Grciwth of
69
Multilayer Gallium Arsenide Structures (L.I. A'yakonov,
N.M. Demenkov, L.A, Krivko, A.S. Crulyayeva BI. Ruda). .
Fegtures of th
L
it
G
i
i
74
p
e
ax
al
rowth of SQlid So
utions of
,
Ga Inlo P by tlae Method of Chemical-Transport Reactions
M
E
.V.
ilyayev, S.G. Konni.kov, V.D. Rumyantsev, V.P.
; UZin) . . . . . . . . . . . . . . . . . . . . . * . . . .
79
6
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= Effect of Irradiation on Inpurity Gapture Iharfng the Crys _ Page
tallization of Semicnnductors (M.R. Greysukh) . . . . , . 85
EPfect of the Limiting Conditioas of Grorrth on the Electro-
_ PhY$ical Properties of Epitaxiel I.ayers of Germgnium
(V . P. mi a3' N. N. Miga3', Yu. 0. Kanter ) . . . . . a . . . 88
Gexmanium ~tch~.ng in aFlow of HI + H2 (V. P. Migal', Yu. 0,
_ Kanter) . . . . . . . . . . . . . . . . . . o . . . . , 93
Diffusion Frocesses in. Epitaxially GroWf.a~g Films (G.N. Gaq-
- dukov, B. Ya. Lyubov ~ . . . . . . . . . . . . . . . . . s . 96
- Structural Perfection and Uniformity in the PrQCipitatian
of Layers Obtained in Connect3on With the Decomposition
of Silafle (E.S, k'al'kevich, A.G. Petrik, L.Ya. Shvarts-
- man, E.G. SheykhQt, Zh.P. Nikolashin, A.L. Traynin) 102
A Study of Spitaai.al Layers of Silicon Subjected to Boma
_ bardment by Low-Energy Ioas During thP Growth Process
(Y.A, Tolamasov, R.A. Rubtsova9 G.N. Gorshenin, N.V. Gtid-
kova L. ?7, Abrfls imova L.M. Prekhorova ) . . . . . . . , . 106
- Epitaaial GPOWth of Silicon in Japan (Dzh. Nishizava) 110
- Rules Governi.ng the Grawth of Crystals and Films From a Melt
: and a Solution in a Melt IIsinq ttie Theory of Morphological. Stability to Study the
Waviness of Layers Obtained by Liquid Epitaxp (T. Nishi-
naga9 K. Pak, S. IIshiyama). . . . . . . . . , . . , . . . 116
Effect of Gravitp oti Liquid Epitaxy Frocasses (V.P. Orloe,
_ V.G. Tsepilevich) . . . . . . . . . . . , . . . e . . . . 121
� Theoretical and Experimental Investigation of the Method of
Llectroiiquid Epitaaty (L.Y. Golubev, V.A. Gevorkyan, Y.N.
Karyayev Yu.V. Shffiartsev). . . . . . . . . . . . . . . . 124
Effect of the Grovth Conditions on the Nropertieg of Epi-
tatial Layers of SoZid Solut3ons of A1 Gal_~b (A./~. Vi-
11sov, A.P. Vyatkin., V.P. Germogenav ~.Ye. piktetora) . 128
Obtaining Epitaxial Layers of GaxInl_~b by the Liqu9.d--
Phase Epitaacy Method (V.Y. Goremykin, E.I. Markov, I.P.
_ Molodyan) . . . . . . . . . . . . . . . . . . . . . . . . 132
; Obtaining Epitaxial Layers of GaAs With Uniform t�dmizture
Distribution (Xu.B. Bolkhovityanov, P.L. Melly1i$04t S.A.
Stroitelee, B.I. Chikichev) . . . . . . . . . . . ~ . . . 135
S ome Features of the Grawth of Layers of GaAs Under Iso-
= thermic Conditions (S.T. Ghistanova, L.A. Borisova, A.N.
Doi�okhov V.D. Zamozhskiy, F.A. Kuznetson). - 138
Lpitaxial Layers of CdaHgl xTe (V.I. Ivanov-Omskiy, V.K.
Ogorodnikov P.G. Sidorchuk). . o , . , o , . . , , . , . 141
. Li~GaP)xZnSej, uid-Phase Apita~cy of Solid Solutians of Ix~~_XGa P and
{N. I, Batqrev V.N, V igdorovicYeYe. Ne -
styur3na, I . Selin, V.B. ifi~ntsev, A.I. Chervyakov
V.P. Shumilin) . . . . . . . . . . . . . . . . . . . . . . 144
7
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_ Growth of Acicular Indium Arsenide Crystals Thruugh a Liq-
Page
- uid Phase With Additional Feeding From a Gaseous Phase
(G.A. Aleksan.drova, G.F. Lymar�, P.B. Pashchenko)
147

Features of the Growth of Monocrystals and Epitaxial Films
_ of Solid Solutiona of Pb1 ,~S nxTe in Connection With Crys-
- tallization From a Liquid-Phase (R.I(l. Akchurin, A.A. Lo-
banov V . V . Ma rychev ) . . . . . . . . . . . . . . . . . .
On the ~ uestion of Obtaining Homogeneous, Alloyed Solid So-
152
lutians From a Germanium-S ilicon System (S.M. Shigayeva,
Yu.G. Belashov)
,
. . . . . . . . . . . . . . . . . . . . .
Ma gnetic Susceptibility and Precrystallization Phenomena in
156
Semiconducting Mel.ts (V.A. Kutvitsk3y). . . . . . o . . .
_ Analysis of the Temperature Fields and Thermoelastic
159
= Stresses in the Process of Monocrystal Growth From Melts
(S.S, Yakhrameyev, M.G. Mil'vidskiy, V.A. Smirnon
Yu.F.
,
Shchelkin) . . . . . . . . . . . . . . . . . . . . . . . .
Analysis of the Thermal Conditions for the Growth of De-
162
tector Germanium (S.S. Vakhrameyev, L.G. Goncharoa, A.P.
Rusin, Yu.F. Shchelkin)
. . . , , . . . , . . . . . . . .
Analysis of Temperature and Thermal Flow Distributions in
169
the Area of the Crystallfzation Front During the Grovth
of Silicon Monocrystals by the Chokhral'ski
Meth
d
y
o
(Kh,I. Makeyev, A.I. Pogodin, I.V. Starshinova, A.A. Kho_
lodovskaya ) .
. . . . . . . . . . . . . . . . . . . .
On the Question of Suppressi.ng Temperature Fluctuations in
173
Melts During the Groxth of Monocrystals (A.V, Kosov, N.V.
Buzovkina )
. . . . . . . . . . . . . . . . . . . . . . . .
Ori the Mechanisms of the Formation of Microirregularities
176
in Monocrystals During Their Growth From a Melt (K
M
Ro-
.
.
_ zin, P.O. Samorukov, M.O. Shimanovskaya). . . . . . . . .
_ Crystal-Chemistry Rules for the Distribution of Impurities
179
~ and the Basic Conditions for Obtaining Chemical Homogene-
ous Semiconductors (S
A
'Stroitelev)
.
.
. . . . , . . . , . .
Component Distribution During the Growth of Monocrystals of
Germanium Alloyed Jointly Wit1z Gold and Antimony (V.Ye
'
182
.
I1
inykh, V.S. Zemskov, O.G. Murtazin). . . . , . . . , .
Alloy,ed Bismuth Telluride Crystallization Processes (E
T
186
.
.
Abduka.rimovg K.V. Ostaninal A.G. Orlov, V.N. Roinanenkol
A.F. Sidoron)
. . . . . . . . . . . . . . . . . . . . . .
Investigation af the Growth of AgGaS2 Monocrystals (V
V
190
.
.
= Badikov, G.A. Ovchinnikova, O.N. Pivovarov, Yu.V, Skokov,
O.V. Skrebneva)
, , , , , , , , , , , , , , , , , , , , ,
- Activit3es of Japanese Scientists in the Field of Crystal
193
Growth (I. Su,nagava). . . . . . . . . . . . . . . .
196
. . .
Obtaining Germa.nium Phosphide Monocrystals (Ya.A. Ugay
,
L.I. Sokolov, Ye.G. Goncharov, A.N. I,uking V.S. Kavets-
- ki
)
y
. . . . . . . . . . . . . . . . . . . . . . . . . . . 198
s
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i-
g
Pgg@
Growing Monocrysta3s of a Metastable -Modifiaation of '
CdAa2 (K.B. Aleyr~ikova, T.A. Z~bina, N.S. Rabotkir~a, c
- Ya.A. UBBy) . . . . . . . . . . . . . . a . . . . . . . . 200
New Techniques for Growing Crystals and Films -
Lpitaaial Growth of AIIIBV Compounds From a L3quid Phase by -
the Temperature Gradienic Method in Connection With a Con- _
trolled Vapor Pressure (Dzh. Nishizaval I. Okuno, T. So-
go ) . . . . . . . . . . . . . . . . , . . . . . . . 204 ~
~iquid Epita~cy of Structures With Hetero~unction~ 3n the
Al-Ga-As System (Zh.I. Alferov, V.M. Aaadreyev, B.G. Kan-
nikov, V.R. Larionon) . , . . . . . . . . . 0 a . . . . . 209
Mass-Spectrometer Studies of the Liquid Phase's Composition
During Epitaxy of Gallium Arstanide in a Ga-AsCl -Ii2 SYs-
tem (A,V. Rodionov, Yu.N. Sveshnikov, v.I. Belasovg A.K.
Afanas' 3rev ) . . . . . . . . . . . . . . . . . . . . . . . 214 -
Using the Optical Method to Investigate the Chloride Pro- cess for Obtaining Epitaxigl Layers of Gallium Arsenide
"in situ" (D.I. Bilenko, A.V. Rodionoe, Yu,N. Sveshnikov,
, A.I. Smirnov, I.N. Tsyplerlkov) . . . . . . . . . . . . . 218
A Study of Crystal SurfaWes by the Method of Light Figures(V.D. Zamozhskiq, V.N. Vertoprakhov). , . , . , . . 222
InvestigatiQn of the Chemical S tate of GeAs Gai' and
Ga1 xA],~As Surfaces by the Secondary Yon-lon EmiBSion
Method 'CV.V. nobko~r A.G. Koval', Yu.Ao Klimovskiy, S.S.
Strel'ahenko, V.Y. S~hubina, S.A. Bondar' A.P. Matyash) . 225 -
_ Radiation Methods f'or Obtaining Semiconduciing Films (G.A.
Kachurin, N.B. Pridachin, S.I. Romanov, L.S. Smirnov) 227
= On the Rale of Focusons in Y.he Formation of a Growing Crys-
tal's Structure (A,N. Luzin) . . . . . . . . . . . . . . . 230
On Bombarding the Surface of a Growingg Diamondlike F ilm
With Slow Ions (A.N. Luzin L.L. Mendrin, A.V. Popov) 233
Advantages of Combining the krificetfon of the Original
Substances W3th the Synthesis of Crystals of Semiconduct-
ors (E.N. Kiseleva, S.A. Stroitelev). . . . . . , o . . . 236
The Chemical State of Admixtures in Crystals and Films
_ F3iase Diagram and the Kinetics of the 3eparation of Excess-
ive Components in Nonstoichiometric Group IV-VI Compounds
(M. Rodo, M. ShneydEr, V. T'yerri-Mit Dzh. Gullawme) 239
Txo-Part Model of Admixtures and Their Iateraction in Atom-
ic Semiconductors and Semiconducting Compounds (E.N. Kha-
- barov) . . . . . . . . . . . . . . . . . . . . . . . . . . 248
_ A Quasichemicai Approacli to th~Ijr~eraction of Mutually
Coa~pensating Adnuixtures 3n A B (Ye.A, Balagurova, V.N.
= Morozov, A.A. Ryazantsev, E.N. Khabarov). . . . . . . . . 253 -
~
9
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~
, Interaction of Tmpuriti From Groups II and VI of the Per- Page
_ iodic Tsble in Type A~~IBV Compounds and the Nature of
~ Solid Solutions of the AIIIgV_AIIgVI Type (V.N. Vigdoro-
vich V.B. IIfimtsev, Y.P. Shumilin) . . . . . . . . . . . 255
Coprecipitatian of Silicon With Donors and Boron (E. Vol'f,
M. Seqdler K. Barch) . . . . . . . . . . . . . . . . . . 260
_ 4acygen in Si~icon Grown by the Zone Melting Method (Yatkhu-
yag Seded, K. Tempel ' khoff, T. Time) . . . . . . . . . . . 265
= Admixture Complexes, Ideal Structure and EZeetrophysical
= Properties oP n-Ge (V.B. Babich, P.I. Baranskiv, V.A.
I1' chishin, V.A. Shershel' ) . . . . . . . . . . . . . . 269
_ Deviation of Admixture Behavior From Equilibrium Behavior
During Epita~cy M.G. Sidorov, L.F. Vasil'yeva, A.V. Si-
dorova, I.V. Sabinina, S.A. Dvoretskiy) . . . . . . . . . 272
- Properties of Alloyed Gallium Arsenide at High Temperatures
_ (V.I. xhokhlov, S.A. Dvoretskiy Yu.G. Sidorov) 276
_ On the Possibilitq of Two-Charge S~tates of an Indium Admix_
ture in a Lattice of PbTe and Other Chalcogenides (I.A,
Drabicin, B.Ya. Moyzhes ) . . . . . . . . . . . . . . . . . 280
FQrmation of Crystalline Imperf8ctians in Cu2 S, Cu2Se and
Cu2Te (G.P. S orokin, G.Z. Idrichan, I.Ya. Andronik, S.N.
Bodrug, A.A. Shevchuk) . . . . . . . . . . . . . . . . . . 283
= Features of the Di,ssolution of Admixtures in Compounds With
Variable Gel_ T~ and Sn1_xTe Compositions (G,S. B~tshmari-
- na , B.F e G~,t~1nov, Ye. Ya. Lev, L. M. Sys oyeva 286
: Effect of the Temperature Conditions of Annealing and Tem-
pering on the State of a Silver Admixt~are in Germanium
, (I.Ye. Polozova, D.A. Romanychev, I.M. Tarasova, Yu.G. Belasr.ov) . . . . . . . . . . . . . . . . . . . . . . o . 290
Methods for Investigating Irregularities in Crystals snd FilIDs
= Investfgation of SurYace liisturbances in the Structure of
Semiconductors by the Eaternal Photoeffect Method Under
Conditions of Bragg Reflection of X-Raqs (M.V. Kruglov,
- V.N. Shemelev, B.G.'Zakharov) . . . . . . . . . . . . . 292
Anisotropy in the S~cattering of Infrared Radiation in Mono-
crystalline Silicon (A.A. Blistanon, V.N. Vishnyakov,
O.G. Portnov) . . . . . . . . . . . . . . . e . . . . . . 296
Studying Microirregularities in Seffiiconductors by the Com-
- posite Method of Moduiation Spectroscopy (M.F. Reznichen-
ko, V.N. Vertoprakhov) . . . . . . . . . . . . . . . . . . 300
A Study of Irregularities in the A11c,ying of Germanium
(M.F. Reznichenko, Ye.M, IIskovg Yu.A, Rybin, V.N. Verto-
prakhov ) . . . . . . . . . . . . . . . . . . . . . . . . . 304
A Study of the Microheterogeneous Distribution oP Admix-
tureg in Monocrystals of Silicona Using the Optical Meth-
_ od (Ye.M. Uskov, V.N. Vertoprakhov) . . . , . , . . . . . 307
_ COPYRIGHT: Izdatel'stvo "Nauka", 1977
[114-11746]
11746 10
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' CRYSTALS AND SEMICONDUCTORS
e
KINETICS OF GROWTH AND DISSOLUTION OF CRYSTALS
' Leningrad RINETIRA ROSTA I RASTVORENIYA KRISTALLOV in Russian 1979 signed
to press 25 Jan 79 pp 2, 247-248
- [Annotatian and table of contents from book by Yevgeniy Borisovich Treybus,
Leningrad University Press, 1,700 copies]
- [Text] This book represents the first attempt to create a textbook for a
_ courae in the experimental kinetics of crystal growth. Ia it are diacussed
= thQ procedure for kinetics fnveat3gations, proceases of crystallization and
- diesolution in different systems, different conditions for the formation,
� growth and disaolution of crqetals with the involvement of applied problema
of the theory of m.aas exchange, and practical applications of kinetice in
geology, chemiotry and physics.
Intended for student geologists, chemists and p:iyeicists, and also of in-
- terest to specialists in the field of crystal formation.
CONTENTS
Page
Foreword
3
Key Conventional Sqmbols
7
Chapter One. Procedure of iCinetics Investigattona
10
1. Instruments for investigating the kinetics of the growth and
dissolution of crystals
11
2. Errore in meaeurement of ratea
18
- 3. Features of thP initial (non-steady-atate) etage in growth of
a crystal
28
4. Variations in rates of grawth of cryatals
33
~ Chapter Two. Analqsis of the Process of Crystallizat3on and IDis-
solution with Slight Diffusion Resistance of the Medium in Binary
Sqstems
42
1. Principles of analysis of kinetic data
-
2. Flows and motive forces in growth and dissolution of a crystal;
-
features of the steady state
46
3. Process stages and the active complex in growth and dissolu-
_ tion of crystals
59
].1
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a
4. Main kinetics equation
63
5. Dimeneionleas kinetic variables
71
6. Form of equation for description of experimental data
74
7. On the number of points of growth and rate of the reverse
reaction with different growth mechaniems
77
8. Kinetice of the cryetallization of poorly aoluble aubstancea
(K ti 105)
81
9. Kinetics of the crystallization of highJ.y soluble substances
(K ti 2�103)
90
10. Activation energy for growth of a crystal
103
Chapter Three. Analysis of the Procesa of Cryatallization and
Diasolution with Slight Diffuaion Resistance of the Medium in Ternary
Syatems
115
1. Metastable equilibria
116
2. Influence of an impuritq altering the structure of the aolu-
tion (the van't Hoff rule)
126
3. Adsorption influence of an impurity
140
Chapter Four. Growth and Dissolution of Crystals Under Conditions
of Significant Diffusion Resistance
152
1. Key equations of combined kinetics
153
2. Dimenaionless parameters characterizing combined kinetics
and the relationship between them
159
3. Determination of amount of diffusion resistance
168
4. Dimensionless procesaing of data on crystsllization in the
combined kinetics region ,
171
5. Study of the process taking place in the diffusion region
178
6. Dependence of the rate of growth of a surface on its poaition
in the flow
183
7. Diffuaion and formation of solution inclusions in growth of
crystals
193
8. Difference in temperature between the cryatal and solution
208
Appendix 1. Reference Data
217
Appendix 2. Reconanendations on Representation of Data on the Kine-
tics of the Growth ani Dissolution of Crqstais
224
Literature Cited
227
Subject Index
243
COPYRIGHT: Izdatel'stvo LeningradskOgo Universiteta, 1979
[111-8831]
8831
CSO: 1862
12
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ELECTRICITY AND MAGNETISM
COLLECTNE ION ACCELERATION BY ELECTRON RINGS
- Moscow KOLIrEKTNNOYE USKORENIYE IONOV ELEKTRONNYMI KOL'TSAMI (Collective
Ion Acceleration By Electron Rings) in Russian 1979 signed to press
27 Feb 79 pp 2-4, 216
[Annotation, Foreword and Table of Contents from book by Vladislav
Pavlovich Sarantsev and Elkuno Avrumovich Perel'shteyn, Atomizdat, 1,290
copies, 216 pages]
[Text] Collective acceleration of ions by electron rinqs is a new effective
method of acceleration which was developed durinq the past decade. The
book contains the results of theoretical and experimental investigations
on the collective method of acceleration. Prablems of forming the electroa
rings, loading them with ions and acceleration are considered. The stabil-
ity of the electron-ion rinqs in collective accelerators is analyzed.
- The book is intended for scientific workers and postgraduate studenta work- -
ing in the field of accelerator technology and plasma physics and also for
students of higher-level courses with physics specialty.
Forewora
Investigation on the problem of collective acceleration of ions by elec-
tron rings has been conducted for approximately a decade in many labara-
tories of the world.
Groups involved in the collective method of acceleration were formed at
- ITEF [Instlitute of Theoretical and Experi..,ental Physics] (Moacow), IYaF
[Institute of Nuclear Physics] (Tomsk), Berekley (UnYted States), Garsch-
- ing and Karlsruhe (West Germany) and other scientific centers after the
first communication at the International Conference on Accelerators in
1967 (United States) on the theoretical and experimental results achieved
at Dubna under the supervision of V. I. Veksler.
The advantage of the new method fs its universality--collective accelerat-
ors can essentially everlap the entire energy range of 3nterest fox physics
investigations. Construction of collective accelerators is economically
13
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much mors advantageous than const�ruction of traditional acceleratrrs.
Heavy-ion collective acceleratora are finding the mast diverse applica-
tione in industry, chemietry, bioloqy, medicine and so on.
The intensive work af many investigators of the collective method is
- reflected in the large number of journal articles and in the proceedings
of conferenaes and symposia. There are no monographs which generalize
the numerous papers on the given topic. We feel that this book should
partially fill the existing gap in survey papers on the collective metho8
of accaleration by electron rings.
- In working on the book, we attempted to resolve many problems. (hi the
one hand, this book should provide an overall concept of the collective
metaod of acceleration by electron rings and on the other hand, it should
be useful �o people directly involved in calculations of collective ac-
celerators and experimenta on them. Therefore, materials of a calculation-
theoretical nature are includedo Moreover, development of collective
method of acceleration, like investigations on storage of relativistic
- particles, stimulated careful study of the dynzunics of heavy-current annu-
. lar beams. The aspects of this problem moat significant for the method
- arce reflected here. Thus, we were forced to proceed toward obvious non-
uniformity of the treatise.
We also note that the qiven book is far from a complete survey on the col-
lective method of ion acceleration. We feel that established facts are
reflected in it. Many problems touched on in the book still await their
own solution. We hope that the bcaok will be useful even in this aspect.
In surveying the literature, we did not attempt to provide an exhaustive
bibliography on the considered problem but restrieted ourselves only to
necessary references.
In working on the book, we had the invaluable assistance of colleagues of
the Department of New Methods of acceleration of OIYaI, specifically _
V. s. Aleksandrov, Yu. I. A],eksakhin, N. Yu. Kazaxinov, A. A. Popov, -
V. A. Preyzendorf, A. P. Sumbayev, V. S. IQzabarov, V. F. Shevtsov, B. G. -
Shchinov, G. Shchornak et al. We express heartfelt gratitude to all of ~
- them.
We are also very grateful to I. A. Zolina, N. A. Filippova and V. Yu. .
Shevtsova f3r the extensive work that they clid in formulating the
manuscript. -
Cantents
Paqe
- Forewor9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Tntroduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Chapter 1. The Principle of the Collective Method of Ion
Acceleration. Types of Collective Accelerators
- and Typical Parameters . . . . . . . . . . . . . . . . . 7
14
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Page
_ 1.
T'he Principle of the Collective Method of Ion
Acceleration By Electron Rinqs . . . . . . . . . . . . . .
. 7
2.
Types af Callective Acce2erators With Electron Rings.
=
Diaqrams of Formi.ng Electron Rings . . . . . . . . . . . .
. 10
3.
TheDesign Features of the Heavy Ion Collective
-
Acaelerataz- of OIYaI. . . . . . . , . . , . . , . . ,
. 18 -
~ 4.
Systems of Observinq the Electron Ring in the Adhesion
,
Chamber . . . . . . . . . . . . . . . . . . . . . . . . .
. 22
Chapter
2s Formation of the Electron-Ion Rings in Adhesion
_
'
Chambers . . . . . . . . . . . . . . . . . . . . . . .
. 26
5.
Pa,rticle Mot�on in the Adhesion Chamber , . . . . . . . .
. 26 .
_ 6.
The Magnetic Field of Adhesion Chambers . . . . . . . . .
. 31
7.
Tne Natural Electroanagnetic Field of the Electron-Ion
_
Ring . . . . . . . . . . . . . . . . . . . . . . . . <
. 44 -
_ B.
The Shielded EZectromagnetic Fields of the Electron Ring.
. 50
9.
Injection of Electron Beans Into Adhesion Chambers.
. 56
- 10.
Formation of Ithe Magnetic Field of Adhesion Chambers.
. 65
11.
Ewperiments on Electron Ring Compresaion. . . . . . . . .
. 72
12.
Ion Storage in Electron Rings . . . . . . . . . . . . . .
. 77 =
Chapter
3. The Stability of Electron-Ion Rings. .
. 88
a 13.
The Resonances of Betatron Oscillations Caused by Non-
-
,
Ideal Magnetic Fields of Adheaion Chambers. . . . . . .
. 88 -
14.
Azimuth (Lon3itudinal) Instabilities af Electron Rinqs. .
. 93 -
15,
Transverr- ^_oherent Instabilities of F':ctron-Ioa Rings .
. 119
- Chapter
4. Acaeleration of Electron-Ion Rings . . . . . . . . . .
. 139
= 16,
N',ethods of Ring Extractiun and Acceleration .
. 139 _
17.
Maximum Permissible Accelerations of An Electron-Ion Ring
-
. 147
- 18.
Focuseinq the Electcon-Ion Ring During Acceleration
. 158 _
19.
Interaction of Eleatron Rings and the Accelerating
System. The Er.ergy Losses of Rings to Radiation During
`
-
Acceleration . . . . . . . . . . . . . . . . . . . . . . .
. 163 ~
Conclusions
The Capabilities of the Collective Method of Particle Acceleration .
170
Appendix
-
The Magnetic Field and the Indicator of Field Decrease for a Thin
-
Circular
Turn `With Current . . . . . . . . . e . . . . , . . , . . .
180
Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . .
208 -
_ (123-6521]
= COPYRIGHT: Atomizdat, 1979
-
6521
CSO: 1862 15
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- LASEHS AND MASERS
unc 621.378.325
ON CONQERTING THE RADIATION OF A IASER HAYING AN UNSTABLE RESO_
NAT OR WITH THE HELP UF G ONICA L OPT IC8
_ Mos c ov ICVANT OYAYA ELEICTRONIKA in Rus s ian Vol 7 Yo 1(91), dan
80 menuscript received 27 Jun 79 pp 142-146
[Article bq S.I. Zavgorodneqa, V.I. Kuprenyuk, Y.V. Sergeyev
and V.Ye. Sherstobltov] &I
~ ,.~~xt] The .,,,hbrs disauss the p.,asibility o2' reduc-
ing the angular divergence of the radiation -
at the oiitlet of a laser with aa unstable
_ resonatQr by converting the beam's cross- -
sectional shape rrith the help af conical op-
, tics. They present the results of experi-
mRnts with a C02 laseP that ahoM th$t the use
of a con3cal converter at the autlet of a la-
_ ser with a small gain (that ia with the mag- _
nification ratio of the unstabie resoaetor
being closo to unity) should result in a sig-
nificant 6ain in the radiation's directivity. 
Tn a number of areas of laser techaology there arisas the prob-
- leaa of cunverting the shape of the radiation beams' cross-
- section. In this article this problem is discuased using a la-
y ser with an unstable resonator as an example. As is knowa
_ (see, for enmmple, [1],y 3n a geometrical approzimQtion the
cross-section of a beam at t,he outlet of an unstable resonator
_ with circular mirrora has the form of e r3ag of width t=
= _(M - Z)ag where M is the resonator's niagnification and 2a is
- the outlet mirror'a diameter. Fron poaer considerations i,n
~ lasers xith small amplification faetors at the resonator3s ap-
= erture (in C02 GDL's [probablr 6as-dyaamic laser] for eaam- -
ple ) magnification I~ is chosen to be close to un1t7, so the
- r9.nng~s relative width t/2Ma proves tQ be extremely small. In
this case, one of the basic 8hortconiags of the laser is the -
large angular ciivergence of the generated radiation, the theo-
retical limit of wriicb even eaceeds snbataatiallq the value
16
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~a
8-
6 ~
2 a
4-
",t~'lt)
-----~tf-{2i~fa-~--tha-t--i-s -eharacteristic for a diak radiator with the
aame beam diameter (A = rave length of the emitted radiation).
This flaw can be compensated for to a considerable degree if
- the radiation beas, the cross-aection of which hag the ahape of
a narrow ring, is converted into a beam of the same diameter
for which the relative xidth of the ring in cross-section ex-
ceeds the original width to a notieeable degree. Sueh couver-
si.on can be accomplished xith the help of various Aptlcal de-
- vicea vith aapherical sTizrf'aces [2-4], and in particular xith
the help of conical reflectors.
W. .ot u�rtb
aB
aa
Qf
42
0
a
Figure 1.
d't
10
_ g
- 4 1,4
1, 4 1,Q t,1 Mt
_ Figure 2.
rell bp the eapressiofi
n az 44 46 48
FOR OFFICIAL USE ONLY
6 2 4s Jt m
Before mflving on to the discus-
s f.on of the features of an ac-
tual conversioa arrangement,
let us examine the dependence
of the anguler characteristics
of an anriular beam vith an in-
tensi:y that is unifornly di- ~
vided aith respect to its -
cross-section and a plane iront
on the ratio of the ring's out- _
er diameter to its ianer diame- -
ter o Aa Pollorra froai Figure
le, wh8re the resulta of the
corresponding numerical calcu-
1ations are presentpd, �.n the
case of a disk rad3ator (M =
= oo) , half of sll the por~rer is
OI
concentrated in a cone xith an
angle at the apex of q~,71/D0,
vhere I~p is the beam's~outer
diameter. This angle increases
as the ring is coza^trictsd, and
for M= 10'2 it is r.. 7A/DQ. As
is obvions from Figure lb the
dependence of ft on the ring's _
width is describecl sut'ficientZy ~
(Vi/s^%X42t)= RMl [Ao(M -l)
(1) ~
Thus, the maaimi;m relative gainy in the half-width of the ra-
diation pattern that can be obtained as the result of conver- -
sion of the cross-section is determined by the ralationahip
7:M,(M2-0l[(M 1-1).44:), (2) R
where M~, M2 = parameters of the ring before and a2"ter cc~er- -
sfono s follgws from Figure 2, in the cases that interest us
the value of I that che,racterizes the increase in the radia-
tioa's average deasity in the angle f* can be > 10.
17 -
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Figure 3 is a diagram of one of
the conical convorter var,iants.
02 The converter consists of twa
conical reflectors aith a 900
angle at the apear The inner
reflector can be vioved in the
aaial direction, which makes it
possible to vary the converted
tiaam's M2 parameter. As is ob-
vians frori thia figure, the
3� ring's relative width actnelly
increases during the convePSion
since ita absalute width t is
pres erved and its outer diameter becones smaller. It is not
haFd to see that the beam's parameters before aad after conver-
sion are related by the relationship DslD1=Mz(Mj-1)1[MI(?14.-1) l. (3)
. For the sake of simplicity let us assume that the change in the
amplitudinal distribution in connection xith the conversion can
be igrored. It ther. follows directly from formula (1) that
such a conical convertsr pcsseases a property that is interest-
_ ing from the practical point of view: it reduc9s the aiameter
of an annular beam while preserving the ha3.Y'-width of tha radi-
ation�a angular distribution. The ring's rridth t actuaYly does
_ not change during con9ersion and consequently, the value of
_ ~~A/(2t) glso remains practiCaily ur~changed. If the eonverti-
e~ beam is eapanded by a factor of D1/D2 with the help o~' a
telescope that is, it$ s ize is bronght up to its orig3zi81
_ value the beam's divergence vill ba greatly reduced. By
comparing (3) and (2) it is easy to see that,in comection with
thie, the eaaimum gai.az in the radiatian's density in the dis-
, tant zoneg as determined by the curves in Fignre 2s is realized.
Ail of Mhat has been said above applisd to the case where the
beam at the conical converter's outlet h$s a unifarm distribu-
tion of intensity relative to the annular cross-section. Ya
actuality this distribution is unfvea because of variability of
the areal converaion ratio at d3iferent points in the crcas-
section. Although in and of itsolt this nonuniformity [5] has
an insign3ficant effect on the half-width of the radiated pow-
er's angular distribution (it is finite and, xithin reasonable
limits)' knowledge oP the distribution o2' the intensity is
stil 1 necessary, for example in order to prevent such undesir-
_ able pheanomena as optical failnrg of tlne convertar's srarface
thermal deformsti,on of the reflecting elements and others. ihe
- shaPe of this distribution obviously depends on the distribu-
- tion of the intensitg in the imcioent beam. From the geometri-
~ cal reIationshipa it follows that the dens3.ty oi the radiation
in the incident end reflected beams is related in the folloving
- 1s
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_ manner:
`rcf (r)-1inc (k)R/t,
xhere r= transverse coordinate (reading fs
_ axis ) that satisfies the condi�tion 0< r c dg;
' R = [ Dl (M1M' -1) - r ]
(4)
om the converter's
dk = diameter of
the internal cone; 2 M, cMZ 1) = coordinate of the
point connected by tha conversion to point r.
lint ~ IrrP , red. unrts
-
10
- e
4
0
Figure 4.
Froffi (4) it Pollows that when
the intensity of the anrnular
beam strikiag the aonvei�ter is
corstant with respeat to its
cross-section, the reflected
radiation is concentrated in
the preazial ~one. This is
quite obvious in Figure 4
(curve 1), where as an exiqmple
ve have pre:ented graphs of
Iref(r) for different intensity
distributians Ic(R ) in tl'~e
i.ncident beam; ~~ese distribu-
tions are shown on the right
side of the figure by lines of the same type as the Ir g(r)
factors~ that correspond to them. As M2 increases, so ~o tl~~~
nonuniformity of the density of the radiation in the reflected
baaffi and the densitq's absolnte values. This is apparent from
curve 119 rrhich Was plotted for the same initial distribution
(Iin(R) = 1) as curve 1, but for M2 = 3 instead ot' 29 as fn
the ~irst case.
In praatice we normallq enconnter annular beams in which the
distribntion of the radiation's intensity in the radial direc-
_ tion is not constant across the rin6's vidth. In particular,
: in lasers with unstable resonators having magnification ratios
that are close to unity, the radiation density as averaged far
the size of Fresnel's zone usnally decreases tovard the rine's
- periphcry as the reault of diffraction effects. When such r-a-
diation beams are converted, no conaentration of intensitq in
- the preaxial zone occnrs, but F'or some laxs governing the
- change in Iinc(R) Iref depends cmly alightlq on r(see curve s
in Figure 4; all three dfatributions of Iinc(R) have been noP-
_ malized for the same poxer in the incident beam).
As is obvious from the figare, the average intensity value
_ Iref(r) for all the cases nnder discussion, rhich correspond to
= the same M2 parameter, coincide for all practical purposes. it
= is not diPficult to coavince oneself that theae aeera
are eatremely close to the density value determined bq~ thelues
19
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0,2 0,4 0,6 r;R,v~,(.wn'rts

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ratio of the areas of the rings in the incident and reflected -
beams : o_
~ref l ,z, S ine (N'11-~ 1) (Mz --1)
\ ~inc /a~ ~ S~ - (Al1- t) (.Mi + 1)
_ Imp Irin, M_12 The dependence of this ratio on -
_ 4 M2 is shorm in Figure 5 for a
'.3 series of values of Mle As is
obvious trom this figure, in
1 the cases tlzat are of ir_terest
1,f ,B ?z MZ the average density of the ra-
diation at the converter's out-
Figure 5. let can be seWeral times greato
~ er than the density in the in- �
_ cident beam and it inGreases as M2 does. In each case, the fi-
nal choice of the value of M2 is based on a comparison of Fig- nres 2 and 59 3tarting with the specific Porm of the distribu-
tion of the intensitp in the incident beam, the requirements
for radiation divergence at the system's outlet, and the value
_ of the maaimslly allorrable power density. As a rule, using a ~
converter vith M2 > 2.5 is nat advisable, because for large val- -
ues of M2 the radiation densities become eztraordinarily large -
_ and the gain in divergence (as follows AL"rom Figure lb) increas-
es eztremelq slowly.
= We conducted an eaperimental investigation of the practical
pessibility of converting an annular beam with the help of a
conical convertear. The investigations xere performed bP the
= basis of a continuous-action flaw-through C02 Iaser. The annu-
- lar beaae xas formed with the help of an unstable resonator with
- field rotation (6]. The dianeter of the beam at the outlet xag
26 mm. The conical converter had the following parameters:
_ auter and inner cone diameters 120 and 36 mm respectively;
angle at the apex of the conical reFlectros ~00�30". The
cones' generatrix's deviation from rectilinearity was no morP
i than 1 �m in the rePlecting surface's aorking zone.
In order to match the beam's diameter w3th the diameter of the
inner conical reflector, an enlarging telescope that brought ~
the beam's outer diameter up to 80 mm was used. Directly in -
front of the converter we placed an annular diaphragm that cut
- off a beam with an outer diameter of 76 mm and inner d~ameter
- of 64 mm (Mlx 1.2)s and a radiation intensity distribution that
was close to uniform. _
The shape of the thermogram of the radiation beam falling on
tne reflector is shown in Figure h&. With the help of aligning
mmvements the reflector was set so that its aais made an angle
20
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~
kany ed
.
0
,
0,4
ro
o ~ 2 jr,~,cdd
e
= PNCI 6.
of no more than 2' with the di-
rection of the incideant beam
(such was the accuracy of the
alignment, which was performed
With the help of an He-Ne la-
ser the direction of which co-
incided with that of the C02
laser's radistion). Figure 6b
is a thermogram of thg radia-
tion beam at the converter's
outlet; its rras obtain,ed in
connection with a digplacea�enti
of the inner cone correspondiag
to M2 = 2.25 (the eaposure time
for this thermogram was approa-
imately one-third of the ezpo-
sure time in the case of Figure
6a).
Figure 6. The angular divergence of the
beams striking the reflector
- and reflected Prom it ras neasured calorimetrically, by the
method of diaphraic. ms. The results af the measurements are pre-
sented in Figure The distribution of the radiated power by
_ angles in the incident beam (the black dots iri Figure 6e) coin-
_ cides quitE well with the theoretical distribution, as deter-
mined by diffraction of a plane xave on a ring xith the approp-
riate dimensions. The xhite circles designate the results of
the maasuremant of the convarted beam's divergence that were
_ abtained in different series of eaperiments.
_ From Figure 6c it is obvions that the canverted beam has an an-
_ gular poaer distribution ha1P-width that is about tW3ce as
large as could have been eapected from the preceding discussion.
The reasons for this discrepancy can be as follows. In the
- first place, when xe made our estimates we did not take into
consideration the depolarization of the radiation that, as is
shorm in [7], takes place fn the case of the converter configu-
retian used by us. The estimates show that the differences in
the orientations of the polarization vector relative to the
converted beam can actually lead to a noticeable enlargement of
the angular distribution. In practice, therefore, it is more
adv3sable to use a conical converter of the flox-thraugh type
171 in which depolarization of thQ radiation does not dccur.
_ Secondly, as interferometric studies h8ve shown, the quality of
the mirror surface of the outer canical converter would mot be
too high (its generatria had a relief with a depth of 0.3 -0.6,um
and a period of 3-5 mm). The generatria's unevenness also ex-
plained the comparatively low accuracy of the placement of the
21
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converter's axis relative to the incident beam's dirQCtion. It
is clear that as 'Zhe technology f or manufacturing conical mir- _
- ror surfaces is improved, these flaws can be eliminated.
Nevertheless, even with such a difference in the divergen.ce of
the incident and reflected beams, the converter that we used is
_ utilitaria.n. Actually if the size of the converted beam is
brought to its originai magnitude With the help of a telescope,
the angular distribution's half-width rrill decrease by a factor
of 4.4, which abundantly compensates for the twofold gain in
energy that appeared du.ring the conversion process.
~ In conclusion the authors wish to express their deep gratitude
_ to I.A. Bochkovskiy for developing the technology for and manu-
facturirg the conical reflectors, A.A. Belokon', who stimulated
out interest in this work and gave us a great deal of assist-
ance in performing it, and Yu.A. Anan'yev for his useful dis-
cussion of the results we obtained. _
B IBLI OGRA PHY
1. Anan'yev, Yu.A., KVANTOVAYA ELEKTRONIKA (Quantum Electron- -
ics), No 61 19719 p 3.
2. Lit. J.W.Y., and Tremblau, R., J. APT. SOC. AMEK., Vol 63,
_ 1973, P 445.
3, Edmonds, W.R., APPL. OPTICS, Vo1 129 19739 p 1940.
4. Bakken, G.S., APPL. OPTICS, Vol 139 1974t p 1270.
5. Kuprenyuk V.I. Sergeyev, V.V., and Sherstobitov, V.Ye.,
KVANTOVAY~ ELEK~RONIKA, Vol 39 19769 p 19620
6. Gcryachkin D.A.~ Kalinir~9 V.PC Kuprenyuk V.I. Sergeyev, -
V.V., and S~herstobitov, V.Ye., ~KVAN~'OVAYA iLEKTRbNIKA9 Vol ~
6; 19799 p 1880.
7. Fink, D. 9 APPL. OPTICS 9 Vol 189 19799 p 581.
COFYR IGhT: Izdatel'stvo "S ovetskoye Radio," "Kvantovaya Elek-
tronika," 1980
( i 10-117461
= 11746
Cs o : 1862
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- LASERS AND MASERS
UDC 621.378.3+681. 535
CONTINUOU3 WAVE LASER RADIATION POWER STABILIZERS WITH AN EX-
TERNAZ CONTROL EIJMT
Moscaw KYANTOyAYA ELEKTRONIKA in Russian Vol 7 No 1(91) , Jan
80 marnuscript received 27 Jun 79 pp 147-1~+
[Article by S.V. And.reyev, O.N. Kompanets and Ye.L. Mikhaylov,
Institute of Spectroscopy, USSR Academy of Sciences, Moscor]
[Text] The authors discuas the features of the ac-
tive method for suppressing continvous-xave
laser radiation power fluctuations, up to the
recording system's noise level, with thg help
of an eaternal control element. They des-
cribe two cvmplementary, effectiveg experi-
mentally tested plans for stabilizing the
power of a C02 laser that suppreas slow and
fast fl ctuations with coefficients greater
than 1.
1. When taking measurements iai which a laser is used as the ra-
diation source, there frequently arises asituation rhere the
maximwn achievable sensitivity of the measurement method is de-
termined by fluctuations in the laser radiation's power. Vari-
ability iri a laser's autput power can be the result o1' a ahole
series of causes (seeg for eaample, [11) that lead to the ap-
pearance in the radiation spectrum of quite intensive (with an
amplitude of up to 20 percent) composite noise coaponents With
frequencies ranging from fractions of a cycle per second to
hundreds of cqcles per second as well as reaker (with an am-
plitude of less than 1 perceat) fast compoxtents xith frequen-
cies of up to hundreds of kilocqcles per second. The limita-
tions related to laser radiatioa noise manifast themselves par-
ticularly in instances where photoreceivers with a very loM in-
trinsic noise level are uaed. Such a situation is frequently
realized during the registration of weak modulation of the in-
tensity of a laser's radiation that ariaes as the sesult of the
23
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action of any investigated effect during the passage of the ra-
diation through a mediwm against a background of a large, con-
stant intensity component.
F or example, when making polarizatfon measurements using a
continuous-wave C02 laser as the radiation source and a photo-
resistor based on the triple compound CdHgTe and cooled with
liquid nitrogen a-, the receiver, the latter's dynamic ran e
makes it possible t~~ register a modulation depth of ,..10'~-10'7
over a rride range of' modulating frequencies, even though the
fluctuations in the laser radiation's output power at these frequencies can eaceed the photoreceiver's intr3nsic noise by
2-3 orders of magnitude. Therefore, there arises the necessity
of reducing these fluctuatioias, either by stabilizing the la-
ser's operdting conditions (proteeting its elements from me-
chanical, acoustical and thermal effects, obtaining single-
frequency ganeration active stabilization of the discharge
current and the dens~ty of the eacited molecnles, and so on
[1-51) or along with passive means by acting directly on
the output radiation's energy parameters for the purpose of
mazinaum compensation for tlae possible fluctuations.
Let us examine in more detail the case that interests ns: the
observation of rreak modulation caused by the action oP the in-
vestigated effeat against a background of a largeg constant in-
tens3ty component. For simplicity's sake, we xill assume the
modulation to be sinusoidal rith frequency SLg whil.e the spec-
tral density of the power of the laser radiation's fluctuations
is constant in the band of frequencies from 0 to omax. Such as
idealized approach will make it possible to achieve a better
understanding of the effect of difPerent parts of the spectrum
of the laser radiation's fluctuatidns' power on threshold sen-
sitivity and the accuracy of the measurement of the wesk modu-
lation's signal.
Let us rrrite the intensity of laser radiation that has inter-
acted with a medium in the form
I(1)-=1 o(l)A (1-}-Mcos52t),
(1)
where IO(t) = intansity oP the incident radiation; M= depth of
the weak (M � 1) modulation that has been induced with Prequency
st; A= coefficient characterizing the absorption af the medium
under investigation (A