TECHNICAL EXAMINATION OF EAST GERMAN SEMI-CONDUCTOR, DIODES AND TRANSISTORS

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• Document Creation Date: December 27, 2016
• Document Release Date: December 11, 2013
• Sequence Number: 6
• Publication Date: April 7, 1959
• Content Type: REPORT

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INFORMATION REPORT INFORMATION REPORT
CENTRAL INTELLIGENCE AGENCY
This material contains infonnotion affecting the Notional Defense of the United States within the meaning of the Espionoge Laws, Tide
18, U.S.C. Secs. 793 and 794, the transmission or revelation of which in ony manner to an unauthorized
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COUNTRY Germany, Soviet Zone
REPORT
SUBJECT Technical Examination of Fast German Semi- DATE DISTR. 7 April 1959
Conductor, Diodes and Transistors
NO. PAGES 43
DATE OF
INFO.
PLACE &
DATE ACQ.
REFERENCES
THIS IS UNEVALUATED INFORMATION
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1. These semi-conductors are believed to have been produced for the East
German "Office of Technology" and for the ERst German UVA. 50X1 -HUM
b. MCN 15914 - Two high frevency, high-voltage (150 V), miniature
diodes produced as for MCN 15913.
c. MCN 15915 - Two high-frevency, high-voltage (110 V), miniature
diodes produced as for MCN 15913.
d. MCN 15916 - Two high-frequency, high-voltage (160 V), miniature
diodes produced as for MCN 15913.
e. MCN 15932 - A. box received from the field containing 30 devices
which could not be associated with any description. Upon inspec-
tion, it was determined that the box contained semi-conductors of
six general types as follows: (For eauivalent West-German type
designations, see Table I)
(1) Sub-miniature diodes (numbered 1 and 2 for identification
in this report).
(2) Small diodes (numbered 3 through 10 for identification in
this report).
(3) Small, all-glass diodes (numbered 11 and 12 for identifi-
cation in this report).
(4) Flat diodes (numbered 14 through 21 for identification in
this report).
(5) Glass-envelope transistors (nuMbered T-11T-4,T-51 and T-13
for identification in this report).
(6) Metal-envelope transistors (numbered T-2,T-31T-9 and T-12
for idenfifination in reznor+)
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STATE ARMY
NAVY
1R
FBI
S-E-C-R-E-T
INFORMATION REPORT
AEC
BD Obi EV
INFORMATION litiibiet
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f. MN 15933 -One germanium, power transistor, reported to be
a copy of the Vest German "Tekadel Type GFT 2006". The pro-
ducers are reported to claim that this is a very high-;ower
transistor for D.C. voltage and conversion applications, that
it is used to replace mechanical choppers, that it meets all
requirements for shdp-borne applications, era that it
will sustain a 50 percent overload at 500 C without damage or
impairment.
g.
MCN 15934 - Two germanium, power transistors of recent (March
1958) development to 'which it is reported the East Germans
had not yet assigned type designations. It is further reported
that tests at VEB RFT Werk fur Fernmeldwesen, Berlin-Oberschoen-
weide show very good ratings.
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2. items comprising eight germanium, point-conae.(1 -HUM
glass-envelope, double-end, miniature diodes are treated together here 50X1-HUM
because of their structural and electrical similarity. For identifi-
cation the samples will be referred to as follows:
MCN 15914 (diodes C and D), MCN 15915 (diodes E and F) and
MCN 1591 (diodes G and 11):
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c. Forward and. reverse voltage-current characteristics were photo-
graphed on the curve tracer. No drift at turn-on was visible in
the forward curves at the sensitivities shown. Diode C shows
somewhat more than usual thermal] effect in the forward direction
as evidenced by the fact that the sweeps to 10 ma and 30 ma peak
forward current do not overlap. This diode also shows a greater
thermal effect in its reverse cheracteristic than the remainder
of the group, or for that matter than the miniature Diodes 1
and. 2 of MCN 15932 as shown by the hysteresis effect in the
reverse characteristic curve. No drift was Observed in the reverse
characteristic curves for any of the eight diodes,. (See Table II)
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(1) The diodes show good forward characteristics. The
statement that the pellets are germanium is based
on the start of significant conduction at about
0.3 v forward voltage as shown in these curves.
(No enftlyses of the pellets have been made-) At
one volt, forward current characteristics in
general are like the miniature diode No. 1 of
NCH 15932 and better than No. 2. They are as
good as, or better than,the larger point contact
diodes of KCN 15932, except for the best of those
which is No. 6.
(2) In the reverse direction, the characteristics are
also very good. Since these diodes can be expected
to have high thermal resistances of about 1.0?C/mu,
the curves were not carried out to a, peak inverse
voltage as defined in M11.-specifications for fear
of thermal dpmpge during these preliminary measure-
ments. Instead a pePlc permissible Dower of about
58 mw was chosen as a limit, based on a maximum safe
junction temp-ature of 85?C.
(b) IILIT 15914 (C and 1) are reported to have max-
imwn voltages of 130 v, At the Dauer limit,
Diode C reached 126 v while Diode D reached
134 v. The peak inverse voltage of Diode C
1.ould exceed 130 v, but operation should pro-
bably be well belay this since Diode C is
beginning to show hysteresis effects while
swept to 126 volts; dc operation would be more
demanding
(c) ECH 15915 - CE and F) are reported to have TIPXI-
Elm voltages of 110 v.. This is easily met by
both diodes. At 110 v, reverse current is only
109nA or less. At the Dower limit, both diodes
reached 140 v.
(d)
RCN 15916 - (G and H) are reported to have max-
ima voltages of 160 v. At the Dower limit,
Diode G reached 140 vy while Dicde H reached
136 v_ Neither shows evidence of maintaining
a peak inverse voltage of 160 v de. Ilmomentary
check of Diode G shaved that a reverse current
considerably in excess of 1.0 ma would be required
to reach 160 v, with a cons ecuent dissipation of
the order of 200 E7:11%, Diode B of NUE 15913 actually
comes closest to bethj a 160 v diode
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d. These diodes have better reverse characteristics on the
average thPn the miniature diodes ros- 1 and 2 of ECH 15932,
but the maximum voltages at the Dower 1iiit for all of the 10
miniature diodes fplls in the range from about 120 v to 140 vl
except for Diode B at 150 v. Some of the other diodes of MCK 15932
such as Eos, 3,4, and 9 are competitive with these.
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e. The capacitance of Diode Awns measured at a smar-ni:nal freq-
uency of one megacycle at two values of reverse voltage bias.
At 0.5 v, the capacitance was 0.40)Inf, and at 25.0 v., it was
0.30)upf. This variation is within the measurement tolerance
of 0a5uf. This independence of voltage on the part of the
capacitance is typical of point contact units where the capaci-
tance is due primAyily to the leads and encapsulation rather
than to the junction. The remaining diodes were meesured only
at 0.5 v dc reverse bias and ambient temperature 27.8?C with
the following results:
Item
Diode
Capacitance
MCN 15914
MCN 15915
MCN 15916
0.50
0.45
0.45
0.45
0.65
0.50
f. These diodes may be compared with the JAN-1N127A (MIL-E-1/
157C), sic. is of comparable size and peak Inverse voltage rat-
lag. This diode is rated at 100 v maximum reverse voltage, with
a peak inverse voltage of 125 v. All of thesadiodes will meet
the rating; some with a few tens of volts to spare. The
forward current of these diodes at 1.0 v fells within the speci-
fied range of 3.0 to 25.0 ma, the measured range being 7,0 to
11.5 ma. The reverse current specificatIon of this JAN type evils
for a uaximum of 3004uA at a reverse voltage of 50 v. All eight
of these diodes are far superior to this, even thong)) they were
measured at UD to 2.80C above the 25?C test temperature of the
specifications. Own specifications permit a test temperature
of 25-4- 3?C) The poorest diode shows 35)uA reverse current at
50 Ir. similarly, the specified maximum reverse current at 10 v
is 25.0)u.A. The poorest diode shows 5.5/.2A, veil within the
specification.
g.
As a check on the high frequency capabilities of these devices,
the reverse recovery time was measured. In the discussion of
MCN 15932, it is explained that recovery measurements were made
under two sets of conditions:
(1) At a forward current of 20 ma and a reverse voltage of 25 v
with a loop resistance of 750 ohms and,
(2) At a forward current of 30 ma and a reverse voltage of 35 v
with a loop resistance of 2500 ohms.
(a)
In case (2) the total reverse current was measured
as a function of time while in case (1) the current
in excess of stealystate was measured. Case (2)
allows direct comparison with the specifications of
a switching diode of MCN 15932 and is similar to
commonly used Western conditions. Case (1) avoids
the difference in results which occur due to dif-
fering steady-state, reverse-leakage current, and
separates out the transition current. It also per-
mits comparison with results obtained earlier with
- number of USA point-contact diodes.
b. The results of the recovery measuremenpst.for these eight diodes
are shown in Tables III and IV. Consiaeiag first the conditions
of case (1), these diodes appear to fe..71.1 ?i.ia that category of the
miniature diodes of MCN 15932, together pith the other units of
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h. (continued)
that item, which comprise the slower group. This group is com-
parable to the poor 10V, of 182 USA point-contact diodes tested and
reported in 1954.. On the other hand, because of the very good
reverse voltagl-current characteristics, the recovery characteristics
measured under the conditions of case (2) appear to be a little
better. At 3.5.usec, all of these eight diodes meet l'ae recuirement
of the VAIN() 0A87 specifications This is not true of the slower
group of MCN 15932, At 0.5.elsec, one-half of these diodes exceed
the maximum current specified by as much as 36%. The average time
for the diodes to recover to 0 5 ma reverse current is 0.76.usec.
This is essentially the same as the 0.79:usec required for the
slower diodes (Nos. 1 thrcuele 6 and 8). Acheck on two sample
diodes under the bias conditions and loop resistance, called for
in the specifications of the only JAB computer germanium diode,
the JAN-111276, indicates that all of these diodes would probably
meet the JAN specifications for recovery..
3. The semi-conductors identified as KM: 15932 are discussed in succeeding
sub-paragraphs. The individual devices end their Uest-German equivalents
are3isted in Table I.
a. Subminiature diodes 1 and 2:
(1) Diode Bo, I was compared with the VAIWO 0A95, specifica-
tions dated 1.2:56. There it is listed CS a general-purpose,
all-glasszermanion diode with a peak reverse voltage of
115v. Dimensionally, Io.. 1 meets the CA95 spccifications
it is approximately 6mfil long by 2,5mm 0.D. and is shaped like
the 0A95. No. 1 is a aouble ended diode of all glass con-
struction, hermetically sealed by a Dumet-to-soft-gless type
of seal at each end. At the cathode end, a tinned copper
wire is butt welded to the rod supportin-r the semi-conductor
chip. The glass-metal seals on La.. I have been somewhat over-
heated; most of the conner-claddin3 is no longer visible-The
curves are generally typical of point-cen-z.act types, the
reverse bredle being sharper than usual. Data from these curves
are tabulated together with W.:170 characteristics (onlj nominal
values, without limits, are specified for this type.) Leasured
values are close to those specified encept at the higher reverse
voltage and forward current points. Here the diode is poorer
than the given values.. Eote, however, that where limits are
given in the case of ether VAIWO typcs (see Table VI) the ratios
of maxim= to nominal to minireum values would sueest limits
for the 0A95 readily covering the observed values for no. 1
No drift of the characteristic curves was observed
(a)
Assuming a thermal resistance of 10C/mw and a maxi-
Trim safe junctfon temperature of 85?C (100C above the
specified value for the 0A95), a maximum safe dissipa-
tion at 250C is 58 mw. The reverse curve for To.. 1
reaches this dissipatien at 12,7, before the 10:: cha
slope point. 3r-ion is above this value
(b) Over the range of voltage from C.5v to 25-Cv, the ce,pae-
itance was constant within the measurement tolerance at
an average value of 0.42 enf. This characteristic, too,
is typical of a point-contact type where the capacitance
is due primarily to encapsulatien and leads and GO is
voltage independent. For this reason, to plot is attached-
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(c)
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No specification for reverse recovery time is given
for the 0A95. However, it was measured for Diode No.
1, for comparison with the others and the data are
discussed under Small Metal-Ceramic Diodes, for some
of which such measurements were requircd.
(d) This diode may be compared with the JAN-1N127A (MIL-
E-1/157C). In so far as the measurements made are
concerned, and in consideration of dimensions, this
diode will meet this specification. However, certain
ratings for the 111121A exceed those of the 0A95 (e.g.
Ehx. Eb, Max. T). These cannot be checked on a single
sample under room temperature conditions..The JAN-1U70
(MIL-E-1/154C) and JAN-1N38B (MIL,E-1/492B) specifica-
tions can be met by measurements made and those diodes
are rated at Max. T. = 700C which the 0A95 is reported
to meet. The 0A95 ratings do not quite meet the dc
voltage rating of these types (90 v vs 100 v) or the
peak inverse voltage (115 v vs 120 or 125 v) but the
measured sample does meet the peak inverse voltage
requirement. These two JAN types are in a larger case
zize than Diode No. I,
(2) Dicde No. 2 was compared with the VALVO 0A91 specification
sheet dated 1.2.56. The statements made for Diode No. 1, as
to application and structure, both specified and observed,
apply to this unit also. Again, VAIVO gives only nominal
data for this type. Both the forward and reverse character-
istics of this diode are below the quality level of the spec-
ified nominal values, this is particularly true of the reverse
current at high reverse voltage. The reverse curve is more
typical of a point contact than No. 1, but it does not hold
up so well or break as sharply as No. 1. Again ; however,
attention is called to the fact that where VAIVO (or Phillips
which is essentially the same organization) gives limits as
well as nominal values, the maximum leakage current at high
reverse voltage is several times the nominal value. Thus, the
measured value of 200 ma at 100 v might well be within limits,
even though the nominal value is only 75 ma, No drift of the
characteristic curves was observed. As for Diode No. 1, a safe
dissipation limit was reached before the reverse curve reached
a slope as low as 10K ohms. The reverse voltage at the 58 mw
point was 135 v; this exceeds the 115 v breakdown limit given
for the 0A91. Over the range of reverse voltage from 0.5 to
25 v, capacitance remained constant at 0.45 yyrr. Like Diode
No. 1, this represents encapsulation and lead capacitance.
The effect is typical of a point contact diode.
(a)
Bo specification for reverse recovery time is given for
the 0A91. However, it was measured for Diode No. 2 for
comparison with the others and the data are discussed
under Small Metal-Ceramic Diodes, for some of which such
measurements were required.
(b) The comments made in regard to equivalent JAN types under
Diode No. 1 apply to Diode No. 2 as well.
b. Small Metal-Ceramic Diodes (Nos. 3 through 10)
(1) None of these double-ended diodes have been opened to deter-
mine internal structure, but externally they show the use
of a right-cylinder of a hard, dense, white ceramic (similar
to an aluminum oxide in appearance) which is sealed at each
end by a smoothly formed soft solder cap. This is a relatively
expensive structure, generally replaced in the U.S.A. for non-
microwave types by some other form such as glass for good qual-
ity units or plastic for lower auality units. The solder sea)
provides a chance for flux to be present inside the encapsu3a-
tion, which may degrade reliability unless some other internal
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(i) (continued)
seal is present which can only be determined by open-
ing the unit. This is unlikely, however. One of these
units, No. 8, showed a drift in reverse current of about
15 sec. duration. No. 7 had no drift, but did display a
snail (0.5uA) reverse current jitter in the 10v range.
Another/No. 6 shows two reverse characteristics, either
one of which it may follow arbitrarily when it is turned
on.
(a) Bone of these diodes is equivalent in mechanical
structure to the comparable VAIVO types listed in
the "General" discussion above. All of thetjpes
0A70? 73/ 811 85, and 87 are all glass diodes in
contrast to the structure described for Nos. 3-10.
The overall length varied from 13.3an (No.6) to
15.2mm (No.10), Maximum diameter was 4.35mm.
All exceed the maxuawn length specification of
12.7mm for the "equivalent types", but meet the
specification for maximum diameter of 5on. The
units are reasonably uniform in shape, althon
the solder seal shape varies somewhat from unit
to unit.
(b) For all of these units, a thermal resistance of
about 0.7?C/mw was assumed, together with a max-
imum junction temperature of 850C, to calculate
a safe dissipation limit of 82 mv at 250C. In
all cases/ this dissipation limit was reached
before a reverse characteristic slope of 10K ohms
was reached. Thus where "breakdown" voltage is
quoted, it represents the value at this dissi-
pation.
(c) Before treating the diodes individnally, some
general comments should be made. The first of
these refer to the capacitance versus voltage
measurements. These measurements were made at
reverse dc bias voltages of 0.5v to 25v. In
general, capacitance was law and largely indepen-
dent of voltage, characteristic of point-contact
types. Some diodes shaved a distinct increase
in capacitance at low voltages. Note that Bo.3
and No. 5 are reported to be the same type (0A70),
but Nos. 3 and. 4 have similsr C vs V curves, show-
ing the most pronounced increas& in capacitance
at low voltages. It will be seer later that this
similarity anplies to other characteristics also.
Neither have slopes high enonel to suggest pur-
posely diffused or alloyed junctions. Results
are shown in Table V together with the limits
observed for the plotted data and specifications
for capacitance where given in theeraivalent type
data sheets. VAIVO does not state the bias volt-
age used for their capacitance measurement.
(d) In general, the forward characteristics of all of
these diodes are representative of typical point-
contact units not of bonded or plated point (very
law impedance) types.
(e) Two diodes in this clsss (Nos. 8 and 9) were reported
to correspond to the 0A87 for which reverse recovery
measurements are specified.. All of the diodes of
MON 15932 were measured, however, as a check on
their suitability at high frequencies (especially
since high frequency rectification efficiency meas-
urements could not be made). Measurements were
made under two sets of conditions. For comparison
with previous diodes tested reverse recovery was meas-
ured with a loop resistance of 750 ohmsla forward
current 20 ma, and a reverse (continued on next page)
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(e) (continued)
voltage of 25 v. The reverse current in excess of
steady-state current is recorded during recovery asa
function of time. This has the advantage of showin_;
recovery speed unaffected by the steady-state
leakage current which varies from diode to diode.
The second set of conditions called for a loop resist-
ance of 2500 ohms, a forward current of 30 ma, and a
reverse voltage of 35 Nr. Total reverse current is
shown as a function of tine. This was done to corres-
por'l to the specifications for reco-ery measurement of
the C:.87 to which Nos. 8 and 9 ex renortedly eauiv-
alent. Also, this corresponds closeij to conditions
of 256 - JAN and freeuent USA practice. Its advantece
is that the rectifier resistance as a function of time
during recovery is obtained by stmoly dividing the con-
stant reverse voltage by the observed current. Tables
of results therefrom, are attached. Those for selenium
diodes, which are limited to low fremency applications
are not shown. Of the others rcG. 1 through 4,9,10,and
12 were within the maximum limits for the 0A87. These
specifications are 0.30 ma maximum at 3.5 nsec. I: very
rough compariscn may be made w-ith the only JAE computer
germanian diode (JLE-1E276). -7.t the same loop resist-
ance but at a much lover forward current (5 ma) and
slightly higher reverse voltage (40 v), the JAE-1E276 is
recuired to have less than 0.5 ma at 0.3)nsec. These
bias conditions would cause a substantial reduction in
current at 0.3)nsec. ever that measured in this evaluation.
However, the time required for the dicdes in this group
to reach 0.5 ma is shown in Table for the conditions
of loop resistance equal to 2:7: ohms. Using the (TIT loop
resistance Rna bjr,s conditions, a check or the two slow-
est diodes of the group (rc. h and No. 8) showed that all
of the diodes in this Group would meet the .1276 recovery
time requirement if correlation between the different test
sets is assumed. A cor=ison of these twelve diodes can
be made with 182 domestJ.c point-contact germanium of var-
ious manufacture as tested and reported in 1954.
(f)
The 750 ohm loop resistance and ccrres?ondirts biases were
closely matched in both cases. Uith the exception of Eos.
2 and 6 at 0.1dusec, and Re. 2 at O..3 /sec., the group
1,2,3,4,5,6,8, would fall with the poor IC5 of the 182
USA unit in reverse recovery time. Eos. 7,9,10,11 and 12
would be in the top 505.
Iooking now at the tabulated recovery times for 750 ohm
loop resistance and ignoring mementaril7 the "equivalent
types", these diodes sem to fall naturelly into several
groups. (See Table VIII)
(1) Nos. 1,2,3,4,5,6 and 8 have very similar lecovery
rates. Nos. 7,9 and 10 are much faster and are
similar to each other, Rose 11 and 12 are quite
similar to each other, and commrise the fastest
group. Nos. 1,2,11 and 12 will be excluded from
this discu:sion since they have different encap-
sulations,
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(2) on the basis of similarity of forward and reverse charact-
erist#5the first group splits into two. Eos. 3
and 4 are much PJike and Eos. 5 and 6 form a pair
of similar units. Nos. 7,9 and IC are much alike.
NO,8 has a rather a typical reverse curve beyond
a reverse voltage of 10 to 20 v which excludes it
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(0 (continued)
froci matching others. Of these groups, Nos. 3
and 4 have the best overall characteristics.
Of the remaining groups, Eos. 5 and 6 have the
better forward characteristics and Nos. 7,9,
and 10 have the better high-voltage reverse
characteristics. At low reverse voltages, Nos.
7 and 9 have somewhat poorer leakage character-
istics.
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(h) In Table VI, the data for these diodes are compared with
the specifications for the equivalent types listed ear-
lier. In many cases it will be evident that the meas-
ured values do not meet the electrical specifications.
Other equivalences are suggested by the comments made
above.
(1) Vbs. 7,9 and 10 might well be compared with the
0A87, since high reverse voltage characteristics
are suitable and speed is high as required for the
electronic switching applications suggested for
this type. These units would not meet the com-
puter application requirements of the MIL-2-1/1025
(JAN-1N276), which calls for a much higher forward
conductance (Maximum of l?Ov at 40ma). These diodes
give only 4 to 5 ma 1.0v. The difference lies in
the gold-bonding employed in the 1E276. They
would probably meet MIL specifications fol. some
of the general purpose diodes such as the 1N38B
(KIL-E-1/492B), 1N69A (NIT-E-1/142D) or the 1E70
(MIL-E0-1/154C).
(2) Nos. 3 and 4 are comparable with the 0A81 or 85
which are all-purpose diodes with a peak reverse
voltage of 115v. Among the JAN types, tiese may
be compared with the 1N38B (AIL-E-1/492B) and
so far as they have been tested, they would
appear to compare very favorably with these speci-
fications. Again No. 5 and No. 6, though similar
to each other, seem to correspond to difference
VAIVO types. No. 5 is compardUe to the 0A7.) as
suggested. but No. 6 is better than the diodes
covered by this type and corresponds more nearly
to a very good 0A70 or 0A72, or possibly an 0A73
when allowance is made for the different tempera-
tures at which the measurements were made. These
diodes may be compared on the basis of measure-
ments made with the JAN 1N69A (MIL-E-1/142D) or
the JAN-1181A (MIL-E-1/155D).
c. Small All-Glass Diodes (Nos. 11 and 12)
(3-)
Diode No. 11 was compared with the VALVO 0A72 specification
sheets dated 29.11.54 and 9.12.54. There the 0A72 is des-
cribed as an all-glass germanium diode for use singly in a
high-resistance rectifier or demodulator circuit, or in
pairs in ratio-detector and discriminator circuits. Diode No.
11 is a point-contact diode in an all-glass envelope 12.2mm
long and approximately 4.3mm O.D. This size is within the
specified 12.7mon by 5mm 0.D., maximum dimensions. No. 11 is
a double-ended, hermetically-sealed unit, apparently closed
at each end by a hard glass to metal seal. The seals show
light metal, not the usual Kovar mouse-gray, but the lead
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(1) (continued)
metal is magnetic and stiff as is Kovar. This is a high
quality sealing technique. The diode shows a considerable
amount of dirt on the interior of the glass encapsulation.
Data from these curves are tabulated together with VAIVO's
nominal values for the 0A72. (See Table IV) A small drift
in reverse characteristics appears on first operation after
several days shelf life; but the drift ends too rapidly to
permit photographing it. Forward characteristics are close
to the nominal specified values. Reverse current is con-
siderably poorer than the specified values, even at low
voltages. This unit shows the highest low-voltage satura-
tion current of any diode in MCN 15932 higher by a factor
Greater than two than the next lower (No.7). These values
would probably exceed limits estimated on the basis of
other VAIVO types. The 0A72 is a law voltage unit; wih
a maximum peak voltage of 45v specified. The maximum esti-
mated safe dissipation limit was reached at an estimated
reverse voltage of 62 before the 10K ohm slope resistance
was reached. Specifications call for a capacitance of
"aboutal)4uf. The measured values, at 1 MCps, were 0.55
if at 0.5v reverse bias and 0.4.5)9uf at 25v reverse bias.
This diode and No,. 12 are almost identical in reverse
recovery characteristics and they are the best in this
item.
(a)
This diode can only be compared with the lowest vot-
age rating JAN type, the 1121A (MIL-E-1/155D), and
even then it will fail to meet the specification.
Although the forward characteristics are satisfac-
tory, and the peak inverse voltage specification
can be met, No. 11 wour fail by a large margin
to meet the requirement of 0.010 ma reverse CM-
rent at 10v.
(2) Diode No. 12 was compared. with the VAIVO 0A79 specification
sheets, dated 15.2.56 and 15.12.56. There the 0A79 is des-
cribeC as an all-glass-enclosed germanium diode for the
same applications as the 0A72. It is evidently a higher
cruality version of the 0A72, since the data sheets show
very slightly poorer forward conduction characteristics but
=preciably lower reverse leakage. Diode No. 12 is an
all-glass-enclosed, point-contact diode appearing to be
essentially identical to No. 11 in construction and size.
There is somewhat more dirt visible within the encapsula-
tion. From the tabulated data, it appears to have very
slightly poorer forward conduction characteristics than
:o. U, slightly better than the nominal values for the
01179. In its reverse characteristics, it is very much
better than No. 11; and is within the specified values
for the 0A79. The maximum safe dissipation limit (82mw)
was estimated to be reached at 95v.. No specification is
given for capacitance. It has the same values at the
limits of reverse bias that were observed for No. 11.
This is typical of a point-contact unit. This diode,
with No. 11 had the best reverse recovery time of the
diodes in this item.
(a)
This diode should_ probably becam2ared with the JAN-
1N69A (MIL-E-1/142D). However, its forward current
fails very slightly to meet this specification,
although its reverse characteristics are superior to
those required. It could very readily meet the require-
ments of the JAN 11481A (MIL-E-1/1551)) in so far as
measurements made are concerned.
-10 -
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50X1 !
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_
d. Flat Diodes (Nos. 14 through 21)
----50X1
(i) These units are all selenium rectifiers. Forward and
reverse voltage-current characteristics suggested that
this is so, and flame and X-ray spectrorraphic enelysis
confirmed it.
(a)
What appears to be an identifying letter (like an B)
is seen on No. 16. A sinilay letter is on No.14.
She remainder have had the black:paint scraped away
in the region where the letter appears on Nos.14 and
16. The condition of No.15 in this respect is not
known, since it was spectro-analyzed before this
identification was observed. As a result of dis-
assembly of No.171 and analysis of No.15, the inter-
nal structure of the unit appears to be what might
be expected for a small selenium rectifier, although
the external appearance is not typical of USA selen-
ium units. 6
(b) In the sample analyzed, the base plate was found to
be a stainless steel comprising Fe (major)) Vi? Co,
17n, and Cr. It was nickel plated. The rectifier
material is,of course, selenium. With the selen-
ium vale found bismuth, nickel, tin, and cadnium
with none of these as a major constituent. This is
in agreement with materials eYpected in USA. prac-
tice. one lead with its eyelet
makes contact to the selenium
by :cans of c ,_Lav)erie.J.. which
is insulated fron the selenium by a fiber r,ad except
at the center cf the structure where c small hole
in the fiber ---,emits the contact. This solder con-
tains bismuth as a major constituent, tin in nearly
the same premortion, and cadmium as a lesser, but
still major constituent. An a...lhesive layer holds
the fiber to the selenium layer. The other eyelet
with its lead contacts the base plate. The entire
structure is coated with a thick, soft, black layer
of insulptirgnaint. It was not identified, but was
easily removed with amyl acetate. The selenium
covers the entire base plate, which is typicelly
14 un long, 5 cm wide, with half circle ends and
with two 3 um diameter holes for the eyelets. This
gives an area of approximately 0.57 cm?. Y
Y A typical USA selenium rectifier is constructed as follows: A base
plate of aluminum or steel plated with nickel is roughened and bis-
muth or other material which rakes a non-rectifying contact to selen-
ium is added. Then one or more layers of selenium are deposited (pos-
sibly with chlorine or bromine in combination) and Processed. A layer
of selenirn oxide, cadmium selenide, cadmium sulfide, shellac, or var-
nish is added. -Pinally a layer of inert metal or of cadmium, bismuth,
or tin is laid down. To this layer one of the electrical contacts is
rade, while the other is made to the base plate.
-n-
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???
ee,
n
(2) '0112 diedcs were teste,1 ?ir-t at a 2f; v
reverse veltage en4 to apprexireete54- a 1.0 ,/,,earn icrward
voltage. Data from theso curves aro tebulated cti cca-
culati= of ferwarL1 current eiersity at 1.0 v, on the
basis of 0.57 cG2 active area, are shown. (Ece lablc 711
Beverse-to-forward-resistance ratio at 20-1 reverse, 1.u-7
foreard is also shwa. Note that the resietance values
are brIlmd on the average value in 1-.110 hyr.-7-r.vcgts lcel? at
20 v. These valurs may be cempared with the typical Uest-
ern values. They ere very
0-11. They could be expected
to increase at higher ambient temperatures, higher duty
-cycle or.higher foruardd peak voltages, but not by the two
Orders of a- situde required to reach typical values. I/
(a) Diodes 110. 20 and 21 have relatively poor reverse
characteristics, the remainder fall in a reasonably
close grouping of about 7 to 20 megohm reverse resis-
tance at 20 v. The forward characteristics, exclus-
ive of No.. 21 seem to fall in two distinct croups.
(3)
Capacitance as a function of reverse bias at a one mega-
cycle small signal test freauency was measured early in the
analysis before it was established that the units were sel-
enium. The values obtained. were very law for selenium. As
a ci eck on these values, measurements at a frcauency of one
kilocycle were me4e on samples of these units and on a
single plate of a typical USA rectifier stack (Federal 10C4A,
17911CX). The active r-ca of the Federal unit was estinm-
toe- at 74- cm2. Table X chewn the results on a per scuare
centimeter tesie. Eesisearee values were such that the dom-
estic unit could net be measurna en the one megacycle bridge.
Nor could, the vrkroun units be meaimred on the one kilocycle
bridge except at zero bias. Zero bias measurements could
not be w.de for these on the one megacycle bridge. The tab-
-alated values do, hcIrcver, give an overlap that allows a con-
cOx.siou to be arcan.. Al]. mcf-ouraaeuts were 'made in the order
of dccreasing bias.
(a)
It ia quite apparent that the flat diodes have cap-
acitance per square centimeter which is significantly
laver thAn common USA rectifier stacks. Evidently,
high rward conductance h-q bean traded for this
chartActeristic.
(b) As a check on this possibility, a very rough test
of the frequency characteristics of the flat diodes
uns made. There is evidence that a given forward to
Tevorse current ratio, of say ten to one, is main-
tsined to a frequency of perhaps an order of magni-
tude higher tbnn is the case for the USA single-plate
lo-..-frcaucncy unit, for the same total forward cur-
rent.
I/ Published Western data on selenium rectfiers give various AC voltage
ratings, ranging usn:eily from about 26 v rus reverse voltage to 26 v
peak reverse voltage. Some companies may give a higher figure. Beyond
about 40 v damage will occur. Forward-current densities can be expected
to be about 50 ma/cm2 at 1.0 vl although at leant one company (Sarkes
Terzian) quotes a lower figure as a safe rating and one reference shows
50 ma/cm2 at about 0.6 v dc. A ratio of forward resistance measured at
1.0 v to reverse resistance measured at 20 v ranges from a common 100 to
1 to the order of 1000 to 1 for special applicatonz such as magnetic
amplifiers. These values are generally given for a 350C ambient.
-12-
-50X1
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S-E-C-R-E-T
(4) All but No. 20 have high reverse-to-forward resistance
ratios/ comparing favorably with the requirements listed
above as typical for magnetic amplifier applications.
Note that these measurements were made in en air amble'
of 20.6 to 2(7.,9?C with a half-sine-wave ZUCGD applied 120
tines per second. At the hiE;her '-1500 usually
accuz.Icd as.an ambient temperaturelthe forward currents would
118thLgher and reverse resistances lowerlbut the changes should
very gre ,
e. Glass Envelope Transistors :T-11 T-4/ T-51 and T-13)
(1) These transistors were reported to be possibly equivalent
to the Intermetall types OC 33134/40 or 41. These types
have been renlaced by the OC 3031 304/ 4001 and 410 which
the manufacturer claims to differ only in mechanical dimen-
sions. None of these correspond mechan-selly to the trans-
istors under test. The earlier models of thc0C 331 34 series
were flat-sided structures while the laer model, are cylin-
drical with flat ends and triang0Pr lead patte/ns. The 0C-
400-410 series have the same shape but an in-line lead struc-
ture. landinum dimensiorc ert" the recent models of both series
are 5.0 mm o.d with a 5,6 .7m seal diameter, and 8.0 mm in
length. T-1 and T-13 are cylindrical with one rounded end
and are typicrolY -" o.d. with no seal bulge. T-4 is
simi3arly shaped, 14.3:zi long, 4.6mm in odd., with a seal
diameter of 5.2mm. T-5 is 15.2mn long and 5.1mm in o.d with
negligible seal bulge. All have in-line lead patterns. Lead
diameters are 0.4mm for T-1, T-5, and T-13, but 0.3mm for T-4.
(a)
Uever,heless, since preliminary alph:--cutoff measure-
ments for the four units suggested agreement with the
equivalent types, they were measured for comparison
with these types where possible. After the electrical
measurements for this report were completed, the :mint
was removed from these units to observe the internal
structures. A brief description is given before the
electrical results are presen,cd.
(b) Transistor T-4, in common with the other three, appears
structurally to be an alloy typej with a large collec-
tor dot visible and a smaller emitter dot on the reverse
side of the rectangular semiconductor block. This block
is soldered to a metal tab which in turn is spot-welded
to a wire lead. The lead is one of three Dunet-like
wires sealed into a soft glass bead. The other twp
have spot-welded to them the leads ( of undetermined
material) which contact emitter and collector
dots. This structure is sealed into a soft glass
tube, using as a stem a s. bead sealed to the Dumet-
like wires. A true hermetic seal results. The struc-
ture appears to have been torch-sealed at both ends and
the internal atmosphere is probably close to atmospheric
pressure. There is no silicone grease, dissicant or
other protective device visible inside. The semicon-
ductor has been etched to a smooth shiny surface, but
it is not completely free of stains. There are no
obvious signs of dirt or extraneous particles on the
interior of the tube, aside from a glass chip.
Eote also that steady state values are discussed.. Initial reverse cur-
rents were as .uch as three times as great as that when the units were
first turned on, but they all stabilized in less than 30 seconds. Form-
ins time is rormfOly required for selenium rectifiers, 3 to 5 minutes being
perclitted in some cases, so that this is not excessive. With the exception
of 0.5 the diodes were remeasured at a higher reverse voltage, corres-
ponding to 26v ms or approximately 38v peak. The average reverse resis-
tance and currert at 20v is tabulated for comparison with the lower pea's
voltage case. Drift or forming times were much longer in these cases.
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?50X1
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(c)
Transistor T-13 uses the three Dumet-like leads
sealed intoabead. asastarting point, but
thereafter the structure differsfron T-4. The
tube is molded soft glass: and tlemode line is
directly visible at the roundel end, and indir-
ect] ;y visible down the side facing the viewer
through the optical distortion of the internal
center lead. A, base molded from powdered glass
is used to seal hermetically to the lead wires.
It has a flat bottom with a step and a pedestal
on top. The step receives the bottle and its
presence is visible as a transverse line near
the flat base of the tube. The inner pedestal is
also visible; it produces the raised central por-
tion from which the three internal leads rise.
Sealing is probably not done with a torch in order
to avoid distortion of the stem. On completion
of the seal, the outside of the glass base region
is ground to produce a nearly uniform outer dia-
meter of the entire bottle below the hemispher-
ical top. The reason for this apparently exces-
sive effort toward a smooth outer wall was not
evident until the "metal envelope transistors"
describe' in the next section were investigated
structrually after preliminary electrical meas-
urenents. It will be described in that section.
(d) Transistor T-13, and also T-1 which is similar use
a small circular sami-conductor disk as the base
of an allay type unit, Two smaller diameter wires,
which appear to be gold, are spot-welded to the
larger Dumet-like leads at one end, and at the other
they contact the 'emitter and collector dots at right
on les to the plane of the disk) A third small dia-
meter wire (apparently not gold) is bent to form a
loop in one end. The loop has a diameter of about
2/3 the diameter of the disk. The loop is soldered
on one side of the disk and the lead extends to the
remaining Dumet-like support wire where it is spot-
welded. The entire upper half of the envelope is
filled with a material which is probably silicone
grease. This may both stabilize surface conditions
and improve heat dissipation Excessive oxidation
of the int-nal lead wires has produced black part-
icles which are free inside the encapsulation. None
seem to have penetrated appreciably into the sili-
cone.. The smaller disk and dot sizes (to minimize
capacitance values) and the :ire loop base connec-
tion (to reduce base spreading resistance) may be
expected to contribute to the higher frequency cap-
abilities observed for T-1 and T-13. It appears
probable that the disk and, therefore, the base
region is thinner in T-1 and T-13 than the other
two units. This would also raise frequency res-
ponse by reducing base transit time.
(e) T-5 uses a molded glass stem simile' in _principle
to that of T-13 though with a much higher pedestal
A torched blab and seal similar to T-4 is used, again
giving a .lermetic seal, No bead structure is neces-
sary. A formed, perforated, metal frame is spot-
welded to the center lead and a semi-conductor die is
soldered to it. The die has an orange peel surface.
A large collector dot is alloyed to the uncovered
side of the die, while a smaller emitter dot is allayed
on the opposite side. The remaining two lead wires
make soldered contact to these dots; access to the
emitter is through the perforation in the frame. It
seems surprising that the lead wire is found suitab7c
for soldering directly to the dots, for example mech-
anical strains might result. This structure appears
to be clean inside. From the standpoint of ruggedness
and reduced thermal resistance,this unit is probably
superior to T-4. Base spreading resistance may also be
better. -14-
50)S1
10
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S-E-C-R-E-T
(2) Alpha-cutoff measumzents showed tnat the -;lass transis-
tors were divisible into a lower frequency group (T-4 and 50X1
T-5) and a higher frequency group (T-1 and. T-13) which
could be compared with the OC 302 to 304 series and the
OC 390 to 410 series respectively. The lover frequency pair
is considered first. 11/
(a) Under the bias conditions VeB . -5.0 v at Iv, = 1.0
ma, alpha-cutoff is given in the following table.
Measurements were made with the Transalyzer, based
on low frequency values of alpha Observed on the
Baird GP-4.
Unit Alpha Cutoff Frequency
T-4
T-5
(megacycles
0C304
.90
0C303
.75
0C302
.6o
(b) The measured cutoff values lie between the most
accurate ranges of the Baird and TransaIyzer
instruments, but the units clearly fall in the
range of the OC 304 rather than the OC 302 or 303.
(e)
h-parameters
figuration at a bias of V
ured at 1000 cps (TAM-
lowing table, using April
comparison. No drift was
in the common emitter con-
ap m IE = 1.0 ma, meas-
are given In the fol-
1957 Intermetall data for
observed in these measure-
ments.
?
Unit
he
h22
hale
ha2e
)
(K ohms)
T-4
124
38.7
4.55
. 9.8 x 10-4
T-5
148
43.5
4.65
10.8 x 10-4
0G304
32
45
1.80
11.0 x 10-4
0C303
16-32
25
1.00
6. x 10-4
0C320
9-16
15
0.60
3.8 x 10-4
12/ 32 to 120 in March 1958 specification.
(d) Again, the two units compare well with the OC 3041
although the input impedance is rather high. T-4
and T-5 are very high B(or h21e) units.
11/ Electrical analysis of these transistors began before knowledge of prob-
able equivalent types was received. After establishment of polarity type, which
was found to be PRP, the Cirst step was to :weep a family of curves through the
region in which h-parameters were to be measured. This covered the bias condi-
tions common in the USA (VeB=5v, IE=1 ma) ,and. those required for previous
meauurements made here on Soviet transistors VcB=JOy,IE=Ima). Since no exces-
sive drift, hysteresis nor alpha crowding were observed, nor was breakdown seen,
meauurements of h-parameters were made under these bias conditions. Subsequently,
they were also made under conditions of Vc-.5v and 10v with IB as required for Ic
equivalent to that in common base. This is about one milliampere. All units stabil-
ized in five minutes or less but one. T-13 was still very slowly drifting during
common emitter voltage feedback (h2le) measurements at both 5v and 10v bias condi-
tions. Later it was learned that some of these units probably are equivalent elec-
trically to the Intermetall OC 3901400,410 series Irhich have-Voltage ratings of ?
VeB 10v, VCE - 5v (March 1958) or Vbp 7:3v (0C410, April 1957). Arepeat of common
base h-parameter meaSurements at 5v was made to see if.damaGe had been done by the
Ipv coemon emitter bias but there had been no appreciable,chane caused by the high
common bias measurement. This reneatmas illcde for T-1 and T-13 which arc the high
frequency units probably dorrecponding-to the .0c390 to 410 series. These coments
are included for camleteness to cover conditions o2 trestnent cccorded those units
and the: f revciA.on_
- 15r
SECTEll
.A..
'1 .1
. ? .'
li?Tt
:13.A
' 60v; T-8 could not tolerate 50v.
A recheck of leakage currents at ow voltages show a 0,--e11
charge as follows (T-25.6 to 25.80C,air imbient no heat si).12/
Unit ..2433a kma vripn iao
T-8 1.0v- 33FA 1.0v o.6o MA
6.ov .** 5311A
2/ Since the 1..0 volt values are essentially unchanged, surface-conditiot
changes probably caused the observed effect.
-28-
S-E-C-R-E-T
NOFORN
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"S-E-C-R-E-T
TABLE
50X1
West German Semi-Conductor Devices roughly equivalent to those here designated
as MCN 15932.
Diode
Number
Equivalent
West German Type
Structure
1
0A95
Ge diode
2
0A91
Ge diode
3
0A73
Ge Point-Contact Diode
4
0A70
Ge Point-Contact Diode
5
0A73
Ge Point-Contact Diode
6
0A85
Ge Point-Contact Diode
7
0A81
Ge Point-Contact Diode
8
0A87
Ge Point-Contact Diode
9
0A87
Ge Point-Contact Mode
10
Bone
11
0A72
Ge Point-Contact Diode
12
0A79
Ge Point-Contact Diode
13
2/
0A31
s?
Si Pouer Diode Rectifier
14
Hone
Si Wafer Diode
15
None
Si Wafer Diode
16
None
Si Wafer Diode
17
Pone
Selenium Diode (?)
18-21
Equivalent types for the transistors were reported to be 0C332 0C34, 0C41,
or 0C4101 manufactured. by Intermetail, Dusseldorf.
2/ No diode No. 13 was received.
TABLE II
MCN 15913-162 Diodes A-H
Summary of Measured Forward and Reverse Characteristics
Forward Characteristics Reverse Characteristics
Measured Measured Measured Measured
Current Voltage Temp Voltage Current Tema
Diode (ma) (volts) (0C) (volts) WO (0c)
MCN 15913. A 0.1 0.17 26.4 1.5 2.0 27.0
10 0.97 26.4 10 3.0 27.8
30 1.65 26.4 Eo 25.0 27.2
132 4400 27.2
B C.1 0.16 26.4 1.5 4.0 27.8
10 1.15 26.4 lo 9.0 27.8
30 2.10 26.4 60 45.0 27.2
150 3850 27.2
MCN 15914 C 0.1 0.175 26.4 1.5 1.0 27.8
lo 1.23 26.4 10 5.0 27.8
30 2.35 26.4 6o 45.0 28 1
126 47c0 28.1
D 0.1 0.175 26.4 1.5 1.0 27.8
lo 0.98 26.4 lo 1.5 27.8
30 1.83 26.4 60 15.0 28.1
124 11.300 28.1
MCN 15915 E 0.1 0.165 26.7 1.5 1.5 26.4-26.1
10 1.00 26.7 -;.) G 24-26.1
30 1.80 26.7 Ko 18.0 27.
F 0.1 0.172 26.7 13y1 14.150
1.5 21i-26.1
lo 1.00 26.7 lo 2.0 26.4-26.1
30 2.00 26.7 60 18.0 27.8
139.5 11.150 27.8
S-E-C-R-v-T
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(continued on
next page)
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S-E-C-R-P-T
TABLE II
(continued)
Diode
Current
(ma)
Measured
Voltace
(volts)
Measured
Term
(0C)
Voltage
(volts)
Measured
Current
(uA)
50X1
Measured
Temp
(?C)
MCA 15916
G
0.1
0.165
26.6
1.5
3.0
27.6
10
1.15
26.6
10
4.5
27.6
30
2.28
26.6
60
30.0
25.9
140
4150
25.9
H
0.1
0.170
26.6
1.5
1.5
27.6
10
0.93
26.6
10
3.0
27.6
30
1.72
26.6
60
10.0
25.9
136
4300
25.9
TABLE III
MCN 15913-16, Diodes A-H
Diode Reverse Recovery Time
Reverse current in excess of steady state vs time.
Conditions: Forward Current 20 ma.
?
Reverse V - 25 v. Loop Resistance 750 ohms.
MCN 15913
Excess Current
At Peak
Excess Current
At 0.1;usec.
Excess Current
At 0.3jusec.
Excess Current
At 0.5)usec.
Excess Current
At 1.0)usec.
A
5-5 ma
0.8 ma
0.6 ma
0.5 ma
0.3 ma
5.3
0.9
0.5
0.4
0.3
MCN 15914
4.5
0.8
0.4
0.3
0.2
4.9
1.0
0.5
o.4
0.3
MCN 15915
4.6
0.8
0.3
0.2
C.1
4.7
1.1
0.7
0.5
0.3
MCN 15916
4.7
0.9
0.4
0.3
0.2
5.4
1.3
0.7
0.5
0.3
-30-
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S-E-C-R-E-T
TEBIL: TV
MCN 15913-16, Diodes A through H
Reverse Recovery Measurements: Reverse Current Above Zero vs Time
50X1
Conditions: Forward Current 30 ma, Reverse volts .
35 v, Loop Resistance = 2500 ohms
Current
Current
Current
Current
Time for Current
Diode
At Peak
At 0.3iusec.
At 0.5,usec.
At 3.5,usec.
of 0.5 ma.
MCN 15913
A
3.3 ma
1.4 ma
1.1 ma
0.1 ma
1.2 ma
2.45
1.0
0.75
0.05
0.9
MCN 15914
1.9
0.6
0.35
0
0.4
2.55
1.1
0.8
0.05
0.9
MCN 15915
E
2,1
0.5
0.3
0.05
0.3
F
2.9
1.3
0.95
(.05
1.0
MCN 15916
G
1.85
0.6
0.4
o
0.4
H
3.0
1.3
0.95
0.1
1.0
0A87 Nominal
0.38
0.036
Specs. Maximum
0.70
0.175
TABLE V
Capacitance Vs Voltage a/
Diode
Number
Equivalent
TYPe
Specified
Max. C.
C Measured
at V = 0.5V.
C Measured
at V = 25 V.
3
010:73
ixne
1.00.4uf
0.60,auf
4
0A70
1
1.10
0.65
5
0/173
1
0.70
0.60
6
01185
1
0.70
0.50
7
0A81
1
0.55
0.50
8
0/187
No Spec.
0.70
0.65
9
0p.87
no Spec,
0.60
0.55
10
none
0.60
0.45
Relative values of measured capacitance are estimated to be accurate to
less than approximately - 0.1,tuf.
S-E-C-
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i.tz JA-os ?
: CIA-RDP81-01043R003300180006-
Diode And
Eviv,Txpe
t.?
TABLE VI
MCN 15932, Diodes No. 1 through No. 12
Comparison of Measured Values With "Egykals121/221_grecifications
Forward Characteristics
Measured Measure: VoltaGe
Current Voltage " Temp L?t 25?C Voltage
-11E1 ivoltsl_ i221 maLK1 Ncy;n2ra). Max(vi (volts)
1
0A95
0,1
10
30
0.185
1.00
1.63
2
0A91
3
0
tA,
1,)
oA73
14.
0A70
5
0A73
6
0A85
* Double-valued reverse curve
** Double-valued reverse curve.
27,2 0.18
27.2 1.05
27.2 1.85
Highest volta,;e curve 720 uA
Lowest voltage curve 670 uA
Uigbest Irnitage curve 770 uA
Lowest, voltage curve 720 uA
Reverse Characteristics
Measured Measured Specified Current
Current Temp at 2500
(uA) _221_ Norm(uA) 14a4u19
1.5
2,5
10
4.o
75
34
loo
130
Highest volta,;e curve 720 uA
Lowest voltage curve 670 uA
Uigbest Irnitage curve 770 uA
Lowest, voltage curve 720 uA
oi
Cl)
e
e
e
I.
1.5 2,5
10 4.o
75 34
loo 130
26.4 8 30 100
30 1.80 27.5 1.5 1.7 2.3 20 15 26.4 25 120 1400
30 20.0 26.4 45 275 1200
0.1 0,145 27.2 0.10 0.15 0.25 1.5 4.0 26.4 1.0 5 30
10 1.00 27.2 0.55 1.05 2.0 10 6.0 26.4 5.5 30 180
30 1.78 27.2 0.60 1.7 3.2 15 16.0 26.4 10.5 65 350
22,5 17.0 26.4 23 145 800
0.1 0.177 27.8 0.1 0.13 0.2 1.5 1.5 26.6 1 5 18
10 1.00 27.8 0,6 0.8 1.1 10 8.0 26.6 8 30 100
30 1,71 27,0 1.5 1.7 2.3 20 40 26.6 25 120 400
30 80 26.6 45 275 3.200
0.1 0.185 26.9 0.1 0.195 0.25 1.5 1.5 26.6 0.4 1.2 ":. 4.5
10 o.84 26.9 o.65 1.15 1.5 10 6.5 26.6 0.8 2.5 7
30 1.3 26.9 1.0 2.05 2.6 75 * 26.6 5.7 35 110
100 ** 26.6 10 75 250
** Double-valued reverse curve.
* Double-valued reverse curve
I.
Declassified in Part - Sanitized Copy Approved for Release
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1-
TABLE VI
(Continued)
Forward Characteristics
Measured Measured Specified Voltage
Diode And Current Voltage Temp at 25?C
Equiv .Type (ma) (volts) (?C) Nin(v) Norm(v) Max(v)
Voltage
(volts)
Measured
Current
(11A)
Reverse Characteristics
Measured Specified Current
Temp at 25?C
(0c) Min(uA) Norm(uA)
Max(uA)
zj
1-3
7+ 0.1 0.185 26.6 0.10 0.20
0A01 10 1.67 t 26.6 0.65 1.4
30 2.95 26.6 1.0 2.45
84+ 0.1 0.185 26.6 0.18
oA87 5 0.95 --26.6 0.78
10 1.35 26.6 . 1.12
30 2.46 26.6 2.15
9 0.1 0.19 25.8 0.18
0A87 5 1.14 25.8 0.78
10 1.65 25.8 1.12
A 30 3.05 25.8 2.15
I LA)
U-1 10 0.1 0.189 25.6
t
None 5 1.00 ? 25.6
)-3 10 1.40 _ 25.6
30 2.45 25.6
114+ 0.1 0.23 25.6 0.20
0A72 10 1.37 25,6 1.4
30 2.20 25.6 2.5
32 0.1 0.23 25.8 0.15 0.23
0A79 10 1.48 25.8 0.8 1.5
30 2.43 25.8 1.4 2.8
-4-Very slight reverse current jitter (0.5pA), but no drift
44-Drifts, (for +11 duration too short to photograph).
0.25
1.9
3.3
0.30
2.2
4.0
1.5
10
75
loo
1.5
10
60avg.
90avg.
1.5
10
Uo
go
1.5
10
60
go
1.5
lo
30
45
0.1
1.5
10
30
45
6
15
105
205
1.5
3.0
240
390
5.0
9.5
45
95
2.0
4.0
4o.
llo
13
55
220
49R.0
1.5
0,0
11.0
25.0
26.9
26.9
26.9
26.9
26.9
26.9
26.9
26.9
26.9
26.9
26.9
26.9
26.9
26.9
26.9
26.9
27.8
27.8
27.8
27.8
27.8
27.8
27.8
27.8
27.8
0.3
0.5
5.5
10.0
0.1
0.4
1.5
4
1.5
4
4o
75
1.3
2.5
34
130
1.3
2.5
34
130
0.8
4.5
50
130
0.35
0.8
4.5
35
90
7
11
180
275
1.0
2.8
18
150
350
---1111161SP_
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S-E-C-P-E-T
TABLE VII
MCN 15932, Diodes 1-12
Reverse Breakdown Voltage
Specified Peak
Equivalent Reverse Voltage
Diode Type At 250C
(v)
1
0A95
115
2
91
115
3
73
30
4
70
22.5
5
73
30
6
85
115
7
81
115
8
87
90
9
87
90
lo
None
11
72
45
12
79
None
50X1
Measured Reverse
Breakdown Voltage Lt/
Meas.
Temp.
-CU--
(v)
122
26.1
135
26.4
151
26.4
166
26.4
95
26.6
2/
26.6
134
26.9
125
26.9
138
26.9
132
26.9
62
27.8
95
27.8
4/ All diodes except No. 12 reached an estimated maximum safe power dissipatbn
before the slope impedance of the reverse curve became as low as 10,000 ohms.
Breakdown is defined as the voltage at this dissipation: 58 mw for Nos. ,1-21
82 mw for Nos. 3-12. For the exception, breakdown voltage at which slope of
reverse curve is 10K ohm and maximum dissipation isrnached is essentially the
same.
2/ Double valued reverse curve:
Highest voltage curve 106v.
Lowest voltage curve 110v.
TABLE VIII
MCN 15932, Diodes Nos. 1-12
Diode Reverse Recovery Time
Reverse current in excess of steady state vs time.
Conditions: Forward Current 20 ma. Reverse V=25 v. Loop Resistance:7500hms
Diode
Excess Current
At Peak
EXcess Current
At 0.1,usec.
Excess Current
At 0.34usec.
EXcess Current
At 0.5,usec.
Excess Current
At 1.0,usec.
1
4.2 ma
0.9 ma
0.5 ma
0.4 ma
0.3 ma
2
3.8
0.8
0.4
0.4
0.3
3
6.1
1.1
0.5
0.4
0.3
4
6.0
1.0
0.5
0.4
0.3
5
4.9
0.9
0.5
0.4
0.3
6
4.1
0.8
0.5
0.4
0.3
7
3.3
0.4
0.2
0.2
0.1
8
4.7
1.2
0.5
0.4
0.3
9
3.6
0.4
0.2
0.2
0.1
10
3.6
0.5
0.2
0.2
0.1
11
1.8
0.3
0.1
0.1
0.1
12
2.4
0.3
0.1
0.1
0.1
-34-
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Forward
Current
?
S-E-C-R-E-T
50X1
Unit
TABLT: X
Capacitance per cm2 at 1 KC clpf)
Bias:
0.0 v
1.2 v
.1.5 v
2.0 v
213v
USA
11.550
2530
2320
2150
2080
#16
250
#21
14-80
TABLE XI
Diode Time After Turn-On
Drift Apparently
Stopped
14 4 to 5 minutes
16 4 to 5
17 5,
18 4.5
19 4
20 5
21 6
TABLE XII
MCN 15932 "Flat Diodes" Selenium Rectifiers Nos. 14-21
12/
Forward
Current Forward
Density Resistance
Data for 26v Peak Sweep
Reverse Reverse Ratio Reverse
Current Resistance to Forward
at 20v Resistance
(MG A )
At 1.0v at 1.0v at 1.0v at 20v
Diode (ma) (ma/cm2) (k) 9/
Data for
37v Sweep
Reverse Reverse
Current Resistance
at 20v at 20v
(uA) 9/ (MEG.1%)
Break-
down
Voltage
(10K slope
Resist-
ance)
(volts)
14
0.27
.47
3.7
1.0
20.
5400
1.0
20
15
0.29
.51
3.4
3.0
6.7
2000
16
0.27
.47
3.6
2.0
10.
2800
1.5
13
67
17
0.44
.77
2.3
2.5
3500
2.0
10
61
18
0.43
.76
2.3
2.0
10.
11.300
1.5
13
64
19
0.48
.84
2.1
1.0
20
10000
1.0
20
66
20
0.42
.74
2.4
18.o
1.1
460
15.0
1.3
71
21
0.68
149
1.5
7.5
2.7
1800
16.0
1.2
36
2/ Reverse current is average value of hystersis loop.
12/ Based on estimated area of conduction egaal to 0.57 cm2.
- 36'
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S-E-C-R-E-T
TABLE XIII
COlvlION BASE h-PARAI
or
MCN 15932 T-1 to 5, 9 to 13
50X1
Conditions of Measurement: Vo : See Table, IE = 1.0 ma,
Unit -Vo hub -1112b h2ib
(volts) (ohms)
...
1 1.1000
1122b
(umho)
cpsITANB=23.3
-25. &C
(h22b)-1
(megohms)
T-1
5.0
27.8
9.5 x 10-4
.974
1.22
.820
T-1
10.0
27.7
10.5
.978
1.27
.787
T-13
5.0
27.4
7.6
.979
.710
1.41
T-13
10.0
27.3
6.8
.982
.,995
1.00
T4
5.0
:5.0
6.3
.989
.328
305,
T-4
lox
34.5
4.8
.990
.233
4.29
T-5
5.0
30.5
5.8
.995
.308
3.25
T-5
10.0
30.5
4.7
.995
.214
4.67
T-2
5.0
31.2
2.8
.976
..405
2.47
T-2
10.0
31.0
1.5
.977
.291
3.44
T-3
5.0
31.2
3.3
.988
.300
3.33
T-3
10.0
31.0
2.4
.989
.215
4.66
T-9
5.0
30.6
2.6
.987
.285
3.51
T-9
10.0
30.8
2.0
.988
,:204
4.90
T-10
5.0
31.2
1.7
.986
.291
3.44
T-10
10.0
31.2
1.3
.986
.208
4.81
T-11
5.0
30.2
2.2
.995
.266
3.76
T-11
10.0
30.2
1.7
.995
*
*
T-12
5.0
30.8
1.7
.988
..269
3.72
T-12
10.0
30.1
1.3
.989
.202
4.95
*Unstable; change in mea-ured value of'. 0.010 xmho. Value initially is 0.285 /mho,
drifting to 0.320 Almho in 3 min. at which time drift has ended.
37-
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Declassified in Part - Sanitized Copy Approved fo
CHAJAA.W.MRIS"?..
(J.!.
3, ilax, Vci3 (v)
Max. (v )
Max ( )
I HEI:" 1.P,; )
,
T41.2.);? 7(j (1.)
6. IR:50 (1410
0, V13 .30v
Ui nirr F 1.37.A !TIT' 3f0i 1;1 .11) I VI I
Jt,
-3
- 0,5
47v= . 23 -1(;0 c.))
,
<
-2v, __O ,35 ?0 70
9' vcEsAT (v)
a. Ic = 1.0A
VEBF(v)
a, VCB
(w)
, a. Vcj_
b.. VcB
C. VcB
10
3,1
-60v
-30v,REB
-30v
-60v, REB
00
-0
- - 00 =1,5
( ?I .( , .1
J.; (
:
12::3 (T-:)
.1,12) ljtjl 1.2 1
,
. ? ?
)
it"
0.17
0.09'5
1.u.hUL2 !I
Jee Nuber
5 ?. cal,(,(,fiatLve.?: 0 1-:,.(;
'0' 1o. [five 20 w,
to
1T,C.
j ni L1,2, 3 zee surge to 01
initial 3 sec surge to 0.01,
Cr.rve 2rac4Jr :;:a,;uroment
Crcve Tracer 3.:easurement
Curve Tracer Neasurement
1B - 120 MA, Curve Tracer
Measurement
Initial Value 0,16
D
0
0
0
(D
7:1
(D
CT)
(/)
(D
n.)
n.)
T=.
0
-0
co
0
0
0.)
0
0
0.)
0.)
0
0
co
0
0
0
TABLE XIA-
(continued)
CHARACTERISTIC SPECIFIED VALUES MEASURED
OR GFT GFT GFT FOR ITEM
RATING (25?C) 2N1581 2N1562 2006/303 2006/603 2006/903 MCN 15933
(After 1 min?
ab
to stilize4)
COMMENTS
11.d.VcE = 60v,REB4.0 -5-10.1 Initial value?.=.-11,6,on1y
e .VcE 1,..9011 REB =0 (-.20 Note 5
small drift >1 min.
f .VaB = -2v, REB =00 -0.012
12.0 (0C/W) 3 3 5 5 5 To be measured
(Thermal Resistance)
13 fab (KC)
a.VcE .-_, -2v,Ic = A,145 _145
14.fae (KC)
a VCE - -6v,Ic = 50014A 12 12 12 Value 12KC is Typical co
' -
t7-
15.ICB0 ( ) C.
a.VcE = - _ 3 3 - 3 -o.48 .
r.k.
._
NOTES: 1-3
1, Specification MIL-T-19500/24 (SHIPS); measurements made accordincly except where noted.
2. Commercial specification, CBS Hytron,
3. Commercial specification, MADE,
4, In many cases dc stability vas not reached completely in 1 min, but major d..ift vas complete. A minimum
off-time of 3 minutes preceded dc measurements,
,:.
5. VcE not taken to -90v, but Imo -, ijj = - .).., o' - U MA
Oh
(D
(T)
(/)
CD
0
-o
co
0
7:1
0
0
0
0
TABLE XV-
SUMMARY OF SPECIFICATIONS AND MEASURED VALUES - MCN 15934 (T-7)
Cl)
0?0
tJ
1-3
CHARACTERISTICS
OR .
RATING (25?C) 2N1581
SPECIFIED VALUES
0ITT, GPT, ,
2N1564 2006/303 2006/603
GFT
2006/903
MEASURED
FOR ITEM
MCN 15934
COMMENTS
1.Max. V(v) -6o
2.Max, V(v) -3o
3.Max. Pt(w) 8.5
4.Max.Tj (?C) 85
5.Max Ic(A) -3
6.IEgo(ma)
a.VEg -30v -=?- 0.5
b.VEg -15v
7.hFE
a.VCE -2v,Ic =0.5A 2160
b.VcE -6v,Ig =16ma
-3o
-15
8.5
85
-3
> 0.5
224-
lo
75
-2
10
75
-2
35(2550)
10
75
-2
(After 1 min.,
to stabilizer
Rating
Rating
Rating
Rating
Rating
0.28
46
43
See Number 11
See Number 6
8.5 is conservative; 0 and
Tj give 20 w
Initial value 4.4ma. Drifts.
(Tracer gives 0.24 ma)
Curve Tracer Measurements
Curve Tracer Measurements
8.VgE(v)
a .VcE -2v ,Icz0.5A "3: 0.85
9.1.7bE SAT(v)
a.Ic =1.0A 50.75
10.VEgF(v)
a.VcB = -60v 55.30
Y0 .70
1.0.60
.
0.42
0.17
Curve Tracer Measurements
IB 120ma Curve Tracer Measuments
Cannot use 60v
Vhgla = 0.08v @ Vcg = 30v.
: CIA-RDP81-01043R003300180006-6
3
3
<
CD
0_
a? CB =
b.VcB = -30v,R =0
,c.VcB -60v1R :00=7:1.5
d.Vm ; -60v,IIBB :0
e;Vag = -90v,RBB =0
LlicB - 2v,REB =00
Initial 2.3 ma Drops to25
c,VcE -6v,IB = 16ma
8.VBE (v)
a.VcE - -1.2A ;f0.50
VCE = -5 A :,:*0.9
9,11cE SAT (v)
= -12 A, IB = -2A .1;0,7
10,, \rap (v)
.
a.VCB : -80v .S10
TABLE XVI
SUMMARY OF SPECIFICATIONS AND MEASURED VALUES MCN 15934 (T-8)
GFT
22.261.22.
.80
-60
70 10
95 75
.153 -2
GFT
200640
GFT
2006/90
MEASURED
FOR ITEM
MCN 17314
COMMENTS
tit
(:)
I-3
10 10
75 75
-2 -2
35(25-50)
to stabilize)5
-0.021
-1.15
24,5
8,2
3211
Rating of Number 11
Rating of Number 6
Rating
Rating
Rating
Initial value 0.024 ma
Initial value 1,25 ma, Drifts to 1,0 ma
in 2,5 min. Tracer shows 1.0 ma.
Curve Tracer Measurement
Curve Tracer Measurement
Estimated from curve tracer,Note: At Van -2v,
Ic .5A hFEZ33
0.7 Curve Tracer Measurement
1,7 Curve Tracer Measurement
Ic too great for MCN 15934,see report
It-
: CIA-RDP81-01043R003300180006-6
41%
CHARACTERISTIC
OR
RATING (25?C)
? 1? ?re
TABLE XVI_
(continued)
MEASURED
OFT GFT OFT FOR ITHM
2N1741), 2006/30 2006/60 2006/90 MCN 159311.
(?terI min.
to stabilize)5
11.IcE
auVoa -2v1REE z 00 10.2
b.VcB ^ -33vREE Is 0
e'VCB X -.60vREB 0
dab/3 % -80vREB oo..515.0
e.vcB ? -,ovABB ? 0
12.0 (?C/W)
Thermal Resistance ..c? 1
13.fab (Mc)
8.0103 s -12v, 1c a -I A? 0.30)n
14.IcEo (ma)
a.Vo = -16v
15.1B(ma)
a.VCE
16.IB(ma)
a.VcE 2
NOTES
-2v,Ic =-1.2A 15-30
-2v,I0 a -5A '5200
.