SCIENTIFIC ABSTRACT SIROTA, N.N. - SIROTA, N.N.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001550820017-2
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 24, 2000
• Sequence Number: 17
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

SIROTA, N. N.
"Effect of Temperature on the Stability of an Undercooled Phase," Doklady
Akademii Nauk SSSR 74 (1950) No 5. pp 971/974.
Translation B-79119, 22 Sep 54

SIROTAI N. N.
"on the TI,.7o Types of S-Shaped Curves Shoving Stability of Undercooled Phases,"
Doklady Akademii Nauk SSSR 74 (1950) No 6, PP 1105/11o8.
Translation B-79119, 22 Sep 54

Physical properties of redid oolutions and compounds in
relation to the energy of reAction of the components. N. N,
Sirota. Dokwy Ahad. Mouk S.S.S.R. 78, 527--3-wl
48, WfAlf-l 'fie reiction energy can be diarac-
terized mainly by the 11"'It of sublimation, the charactcri-~tic
vibration frequency of the aturns, the temp. dependence of
the Imit capacity and other thermal consts. The clearest
relation between the reaction energy and thephy3. properties
is found for the properties that are related to the vibration
freauency. J. Rovtar Leac:h

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SIROTtL, N.N.
Development of processes of nonvariant isothermic conversion in
time. Izv.Sekt.fiz.-khim.anal. 23:70-89 '53. (KIaA 7:1)
1. InBtitut obahchey i neorganicheskoy khimii im. N.S.Kurnakova
Akademii nauk SSSR. -
(Steel--Metallurgy) (Crystallization)
(Phase rule and equilibrium)

Referativnyy zhurnal, Metallurgiya,
The Physicochemical Nature of Highly Coercive Alloys
khimicheskaya prirocla vysokokoertsitivnykh splavov)
Nauchno-tekhn.
152-203
The physical theories of the processes of magnetization and
HC are analyzed. The maximum HC of an isolated single-domain
ferromagnetic particle (IFP), and the effect of nonmagnetic or
weakly magnetic foreign inclusions in ferromagnetic material
upon its HC,are examined. The major types of highly coercive
alloys are dealt with, and the factors in the physical chemistry
defining their structure and magnetic retentivity are examined.
Theoretical analysis leads to the conclusion that high HC values
may be due: a) to high values of the reduced constant of aniso-
tropy of the IFP, b) to the shape of these IFPs and the textures
due to their positioning (high HC; values being attainable with
IFC having their long axes in the direction of magnetization);
c) to a heterogeneous structure due to the presence of a signifi-

137-58-4-8346
The Physicochemical Nature of Highly Coercive Alloys
cant amount of nonmagnetic or weakly magnetic inclusions in the ferromag-
netic phase; d) to high structural stresses due to the mechanism of trans-
formation. As a rule, alloys of high HC are found in a metastable condition:
characterized by incompleteness of the transformation processes, high dis-
persion of the component phases, high stresses at the phase boundaries, etc.
Clarification of the conditions for obtaining high HC in alloys is a most im-
portant question in the theory of metallic alloys, and one of general signifi-
c,~nce.
Bibliography: 94 references.
1. Alloys--Magnetic properties--Theory
properties
L.P.
2. Ferromagnetic materials--Magnetic
Card 2/2

~Aapocfavtenle Modulla funga 9 Drugind
'
llekhmilcheikitni Kharaktcrls(N;tifti Aliti-
I
minevykh Splamr. pri PayAchnykIi Tem-

Zakhatm-, rwit N. SSSR
'
X int., '!,,I ~, 1!.' 57, p P, 121-
h. N,, f
122, Innaiibill. comparimm of Vol DR's
InfAIIIIIS With MCIC~ pical -iz,
varAlig toillwa-
VIM.

SOV/137-58-11-21953
Translation from: Referativnyy zhurnal, Metallurgiya, 1958, Nr 11, p 17 (USSR)
AUTHORS: Urazov, G. G. , Sirota, N. N.
T IT LE: Physicochernical Analysis as--a Branch of General and Inorganic
Chemistry and Physics of Condensed Systems (Fiziko-khimicheskiy
analiz kak otdel obshchey i neorganicheskoy khimii i fiziki konden-
sirovannykh sistem)
PERIODICAL: Sb. nauchn. tr. Mosk. in-t tsvetn. met, i zoloti, Nauchnc~,tekhn.
o-vo tsvetn. metallurgii, 1957, Nr 30, pp 3-36 '-
ABSTRACT: A detailed historical review of the origins of a new branch of
science, viz. , physicochernical analysis (FCA), founded by N. S.
Kurnakov. One of the conditions for further successful development
of FCA is perfection of the experimental techniques in physical
chemistry - the development of dependable and accurate instruments
for measuring various properties of substances. The problems in
FCA requiring solution singled out by the authors are the following:
theory of liquid and solid solutions, daltonide and berthollide phases,
phase diagrams of dielectrics, semiconductors, and heat-resistant
Card 1/1 superalloys, and the FCA of the rare elements. 1. K.

SOVI 137-58-11-23219
Translation from: Referativnyy zhurnal. Metallurgiya, 1958, Nr I L. p 197 (USSR)
AUTHOR: Sirota, N. N.
TITLE: Elastic and Thermal Constants of Solids in Relation to the Atomic
Interaction Energy (Uprugiye i termicheskiye konstanty tverdykh
tel v svyazi s energiyey mezhatomnogo vzaimodeystviya)
PERIODICAL: Sb. nauchn. tr. Mosk. in-t tsvetn. met. i zolota. Nauchno--te'kh-,i.
o-vo tsvetn, metallurgii, 1957, Nr 30, pp 138-150
ABSTRACT: The relationship between the temperature coefficient of thermal
expansion a , compressibility X , specific heat C, and the lattice
energy was investigated. The following equation was adopted for the
energy of the atomic interaction: Ul = (-A/Vm) + (B '/Vnj, where V
is the volume of the crystal. It is shown that this equation satisfies
the relationship C =2a)~n. To investigate the temperature dependence
of C the oscillatory frequency-distribution function is approximated
by the following expression: dZ/dv =- A vP exp ( - a v n), where
V is the frequency and dZ/dv is the frequency density. The fol-
lowing characteristic temperature is introduced: 0 = hv,lk where
Card 112 V 0 is the frequency at which the function Z( v ) attains its maximum.

Elastic and Thermal Constants of Solids (cont. )
SOV/137-58-11-23219
Formulae were derived for C ais 81*~function of T/0. With the aid of the ratio between
a and C and of the temperature dependence of C obtained it is shown that with
T = 0 a= 8RV,/9mUo, where Uo and Vo are the bond energy and the volume at
absolute zero, respectively. On this basis a conclusion is drawn that can serve
as a measure of energy of the atomic bond in the lattice. In cases where Lindeman's
equation a Tn,lt = const is justified, Tmelt is proportional to the bond energy.
M. K.
Card 2/?

SOV/137-58-11-23301
,rranslation from: Referativnyy zhurnal. Metallurgiya, 1958, Nr 11, p 208 (USSR)
AUTHORS: Sirota, N. N. , Chizhevskaya, S. N.
TITLE: Characteristic Temperatures of Mg?Si, Mg2Sn, and Si (Kharakteri-
sticheskiye temperatury Mg2Si, Mg-)Sn i Si)
PERIODICAL: Sb. nauchn. tr. Mosk. in-t tsvetn. met. i zolota, Nauchn. -tekhn.
o-vo tsvetn. metallurgii, 1957, Nr 30, pp 175-191
ABSTRACT: The characteristic temperatures 0, the rates of propogation of
longitudinal (1d) ultra sonic waves Vld, the modulus of elasticity E,
and the microhardness of Si, MgSi, and Mg?Sn were determined
experimentally. The compounds were obtained by the direct smelting
of the components in a resistance furnace. 0 was determined by
X-ray diffraction from the ratio of the intensities of one line at two
different temperatures V and E were measured on an ultrasonii::
flaw detector UZD-'7N: ~6crohardness was determine with a PMT-3
apparatus. For Si: a - 10 = 4.58, 0 = 7580K V , 10 4,82 cm/sec,
2 Id
E = 5910 kg/mm ; for Mg2Si: 14.8, 3980K, 5.32, and 5430 respectively;
for Mg?Sn: 22, 2060K, 2.63, and 3940. 0 calculated by means of the
Card 1/2 coefficient of linear expansion agree well with the experimental values,

~-,haracteristic Temperatures of M92S', M92Sn, and Si
SOVI/I 37-58--11-2 3301
whereas those calcutated by Lindemann' s formula give incorrect values.
G. L.
Card 2/2

SOV/137-58--11-23383
Translation from- Referativnyy zhurnal. Metallurgiya, 1958, Nr 11, p 220 (USSR)
AUTHORS: Sirota, N. N. , Belyayevskiy, V. 1. , Shmatova, G. P.
TITLE: A Study of the Physical Properties of Solid Solutions and of Processes
of Aging in Al-Mg-Si Alloys Containing 990/o At (Izucheniye fizi--
cheskikh svoystv tverdykh rastvorov i protsessa stareniya splavov
At-Mg-Si, saderzhashchikh 99$o At)
PERIODICAL: Sb. nauchn. tr. Mosk. in-t tsvetn. met. i zolota, Nauchno~tekhn-
o-vo tsvetn. metaliurgii, 1957, Nr 30, pp 223-234
ABSTRACT- It is shown that the hardness, the modulus of elasticity, and the
electr,ical resistivity of alloys (quenched as well as aged) of the
ternary AI-Mg-Si system along a section of the phase diagram corres-
ponding to a constant At content (99070) exhibit minimum values when,
the composition of the alloys corresponds to a quasi-binary section
of Al-Mg?Si (0.6 at. '/oMg). It is concluded that the change in proper-
ties of the quenched alloys is caused by the presence of a short-range
order which is most discernible in the vicinity of the quasi--binary
section of At-Mg?Si. The increase in hardness occurring on both
Card 1/2 sides of the quasi -binary section after aging is attributable to an

A Study of the Physical Properties of Solid Solutions (cont. )
SOV/137--58-11-23383
increase in supe rsatu ration, and the reduction of electrical resistivity in the vicinity
of the quasi-binary section to a decrease in the number of segregations and an
increase in their size to a point when they are larger than the free path of conduc-,
tion electrons.
A. K.
Card 2/2

SOV/1 37- 58-11-23716
Translation from: Referativnyy zhurnal. Metalturgiya, 1958, Nr 11, p 263 (USSR.)
AUTHORS: Sirota, N. N., Bychkov, Yu. F.
TITLE: Measuring the Longitudinal Modulus of Elasticity at High Temperatures
in a Vacuum (Izmereniye prodollnogo modulya uprugosti pri vysokikh
temperaturakh v vakuume)
PERIODICAL: Sb. nauchn. tr, Mosk. in-t tsvetn. met. i zolota, Nauchno-tekhn.
o-vo tsvetn. metallurgii, 1957, Nr 30, pp Z54-267
ABSTRACT: An apparatus is described for measuring the modulus of normal
elasticity E in a vacuum at temperatures up to 10000C. The magnitude
of the E of a material was calculated according to the measured values
of the natural frequencies of the transverse oscillations of a cylindrical
specimen (5). The general arrangement of the apparatus is given., The
electric oscillations are transferred from a 3G-2A sonic-frequency
generator to a piezoelectric transducer which transforms them into
mechanical oscillations of the same frequency. The horizontally sus-
pended 3 is connected to the oscillating needle of the transducer by
means of a suspension wire. The natural oscillations excited in,the
Card 112 3 are picked up by a detector, consisting of a second piezoelectric

SOV/1 37-58-11--23716
Measuring the Longitudinal Modulus of Elasticity at High TemperaLures (cont,)
adapter with the S suspended from its needle. Adapters with Rochelle salt crystals
are used as the transducer and the receiver. The transducers are mounted in a
special quartz apparatus which makes it possible to reproduce the measurements
of natural frequencies in a vacuum an4
resistance furnace, The temperature
couple introduced into the quartz appa
the thermocouple is welded. The app;
total error of measurements constitut
size of S on the magnitude of E is give
with an alloy of Fe with 160/o Ni.
which is placed in a dismountable electric
of the S is measured by a Pt/Pt-Rh thermo-
-atus through a Mo-glass robe into which
ratus is evacuated to 10-Cm Hg. The
s -30/o. An analysis of the effect of the
i, also the experimental results obtained
L~ G,
Card 2/2

SOV/137- 59-1-1352
Translation from: Referativnyy zhurnal. Metallurgiya, 1959, Nr 1, p 180 (USSR)
AUTHORS: Sirota~ N. N, Ginzburg, F. N.
- ---------
TITLE: A Study of the Physical Properties of Bi.-Sb Alloys
?.Izucheniye fizicheskikh svoystv splavov v)smuta s sur-moy~
PERIODICAL: Sb. nauchn. tr. Mosk. in-t tsvetn. met. i zolota. Nauchno-lekhn
o-vo tsvetn. metallurgii, 1957, Nr 30, pp 283-291
ABSTRACT: Physical properties (-thermoelectric power, electrical resistivity-
hardness, microhardness, and modulus of elasticity) of IQ Bi-Sb
alloys were studied. The composition of the alloys varied from 0 to
1007o in increments of 5 atom-%. Rod-shaped specimens 4 mm in di-
ameter obtained by casting in a graphite mold were annealed at a
temperature of 2400C for a period of 2 weeks. The shape of the
hardness and microhardness curves is typical of systems which form
a continuous series of solid solutions. The maxima of these curves
correspond to an alloy containing 801/o Sb and 20% Bi. A well-defined
maximum corresponding to an alloy with a composition of 15% Sb and
85% Bi is observed in curves representing the electrical resistivity
Card 1/2 and the thermoelectric power as functions of the concentration of

A Study of the Physical Properties of Bi-Sb Alloys
SOW137-59-1-1352
the constituents. A slight deviation from additive behavior was observed in the
curve "modulus - of-elasticity vs. concentration " - In alloys containing 20-30%Sb
a certain maximum is observed which coincides with the maxima on the curves
of electrical resistivity and thermoelectric power.
V. G.
Card 2/2

SOV/ 137-58-10-20802
Translation from: Referativnyy zhurnal, Metallurgiya, 1958, Nr 10, p 65 (USSR)
AUTHORS: Sirota,__N.N. 5amsonov, G.V., Strel'nikova, N.S.
,J
TITLE: Electrical Properties of Some Metalloid Compounds and Solid
Solutions Thereof (Elekt riches kiye svoystva nekotorykh metal-
lopodobnykh soyedineniy i ikh tverdykh rastvorov)
PERIODICAL: Sb. nauchn. tr. Mosk. in-t tsvetn. met. i zolota, nauchno-
tekhn. o-vo tsvetn. metallurgii, 1957, Nr 30, pp 368-374
ABSTRACT: The results of measurement of the electrical resistivity
and thermoelectromotive force of a number of carbides, sili-
cides, borides, nitrides, and certain binary alloys thereof, all
in a Cu-containing vapor, and of preliminary determination of
the magnetic susceptibility of a number of two-component alloys
of these compounds are presented. The specimens for investi-
gation are made by hot extrusion. The electronic structure of
the objects of investigation is used as the basis for discussion
of certain results of the work. 1. Intermetalli-c compounds--Eiectriciql
properties 2. Alloys--Electriical properties R.A.
Card 1/1

20-5-14/54
AUTHOR: Sirota, N. ff., Ylember of the All Belorussian SSR
TITLE: On the Dependence Upon Temperature of the Heat Capacity
of Solids (0 temperaturno7 zavisimosti. teployemkosti
tverdykh tel).
PERIODICAL: Doklady Akademii Nauk SSSR, 1957, Vol. 115, Nr 5,
pp. 901-903 (USSR)
ABSTRACT: At first the results of various previous works dealing
with the same subject are mentioned. The present paper
shows a possibility for the computation of the dependence
on temperature of the heat capacity of the solids on the
assumption of a nearly Gauss-like distribution of the
frequencies. In the case of the method adopted here for
the computation of the temperature dependence of the heat
capacity, the author confines himself to the case of the
isotropic solid body. For the distribution of the frequencies
assumed here dz/d V- A V Pe-a V n
may approximatingly be written down. The author, however,
CARD 1/3 describes the curve of the distribution of the frequencies

20-5-14/54
On the Dependence Upon Temperature of the Heat Capacity of
Solids.
on the spectrum of the oscillations by the approximated
equation
dz/dW - A V P e-"
and this approximation apparently causes no great error.
Herefrom results
00
Z M 3N - " A V Pe-a * d V - A r (p+1 )/ap+l
0
and further A = 3Na p+1 / *r (p+ 1 ). The relation 10- p/a is
here true for the frequency V. corresponding to the
maximum of the distribution curve. e = h V0/k - hp/ka
is then true for the characteristic temperature. Wext,
CARD 2/3

20-5-14/54
On the Dependence Upon Temperature of the Heat Capacity of
Solids
expressions for the total energy of the oscillations
(i.e. for the internal energy of the solids) and for the
temperature dependence of the heat capacity of an isotropic
solid are given. These formulae are then specialized for
the case p - 2. The experimental data on the temperature
dependence of the heat capacity of various solids are well
described by the here derived expression. The simplicity
of the lair obtained here for the modification of the heat
capacity of the solids as a function of temperature offers
far-reaching possibilities for the application of this
theorem to different thermodynamical and other physical
computations. There are 2 figures and 8 references, 4 of
which are Slavic.
SUBMITTED: March 25, 1957
AVAILABLE: Library of Congress
CkRD 3/3

SIRUPA, II.N.; WIIL'KICVICH, M-I.; SIROTA, A.G.; SHIMkNSUYA,%V.F.
I .. . Illectreta made from high polymers. Dokl.AN BSSR 2 nor.10:413-
415 If 158. (MIRA 12:8)
(Blectreta)

SIROTA, 11.11.
-
Heat conductivity of solid bodies. Dokl. AN BSSR 2 no.11:453-456
D '58. (KIRA 12;8)
(Heat-Conduction)

AUTWRg Gulyajov, B.B. SOV/24-58-4-37/39
TITIRt Conference on Crystallisation of Mob"(Soveshchanlye pa
acriotallizateil setallov)
FWODICAL. Izveatija Akademil Nauk SSSR, Otdoleniye Telhalcheakikh
go", 1958, Nr 4. pp 153 - 155 (USSR)
AL"RACT This conference was held at the Institut MaShinovedonlya
All RM (Institute of Mechanical Xagineering or the Ac.Sc.
DWOR) an June 28-31, 1958. About 400 people participated
ad the participants included specialists in the fields of
a
n
foundry, metallurgy crystallography , physics, weldint;,
best, physical chelistry, mathematical physics and other
related subjects. In addition to Soviet participants,
foreign visitors included Proteaso r D. Czzikl. (last Germany)
amd 5.1. Chvoriwv ( Czzecho Slovakia) . This conference on
C17"allization of meta33was the fourth conference relating
to the-Samoral problem of the theory of found y processes.
Rlmiiom of Non-ferrous Metals. N.N. Belousov and
- 2z rneir paper -Dva,Vzg4U2Qu OL EFS
""llisation and the Properties 0f Non-forroue Metals
Vanier Conditions of Apply1ja& Pressure', presented results
.of mWerijapate on prcduciag coatings which crystalline
mader pressure froa all sides and piston pressure within
a wide range of specific loads. The results of the
lawassAgatIca provide material for improving existing
Mods of applying pres:%Lre toeinfluence the crystallisation
Zo alloys. The influenc of t conditions of crystal!-
186110a an the casting and mechanical proportion of
aluminium alleys, at normal and at elevated temperatures,
we" discussed in thespalors of I.Y. Rojobnev and
A.Ts_ftaemov. The r $u t a of investigation$ of the
conditions of crystallization of aluminium alloys during
soatinuous casting were presented In the paper of
To.b.jj&Agroy. N.L. Pakrovskly and D.Ye. QyAjjoako
Cards/10 dealf-with the featurna-6or-tiyatallisation ui viiious
SOAD-forroue alloys &Ad the pbyeico-chomical phenomena
accompanying this process.
otpllisation of Metals in the Welding Bath. The
40NIM papers, were read., B.A~ Wovehan
of the Features of the Microscopic Chemical Non-uniformity
I& Alloys'; G.L. Pet~v - 'Crystalligatiou and Ct.,,jc,,
goo-Waforatt7 in-WO-r-I.Jolats". M.Kh. 449zMorcv D4
V.8. Godykh - "Iziflu*aco of 3on-uxLiformi.ties of
CrINVE=zation in the Weld Bath an the rorzation of Hot
Crackma.
ipstalliffation of Metal: in,an ultrasonics Pield.
X" SO.L.Lowl" papers W*r ro _Yex_Wr__07_ths Ar.Sc.
-Ablormealax. UM JLY. Sirota, and
9.2._ A I Ako - "C-rTET&Tfts&tIU-A of Met"s Sal Alloys
re.0
I* an resonics
I-IS.11-MID - 'Influea=a of
sl"tic Oxcillat t i, Illeation
ad Una tozhoolcgicia properties of Alloys-; L.L_j"Im
= A.A. Torokhis - ~Zffntct of Ultrasonics on Crystallising
Cardq/10 Datal W-M"eld both'.

SOV/137- 58-12-25017
Translation from: Referativnyy zhurnal. Metallurglya, 1958, Nr 12.. p 142 IUSSR)
AUTHOR: Sirota, N. N.
TITLE: On the Temperature Relationship of TherrnodVnamic Functions of
Solid Substances ('0 temperaturnoy zavisimosti termodinamicheskikh
funktsiy tverdykh tel',
PERIODICAL: Sb. nauchn. tr. Fiz. -tekhn. in-t AN BSSR, 1958, Nr 4, ZZ5-228
ABSTRACT: tristead of the generally accepted description of the spectrum of the
normal oscillations of a solid introduced by Debye in his specific-heat
theory the author employs the density of the distribution of frequencies
described by the following equation- dr/d = A !--P exp(- Q,;n 1 where v
is the frequency, A is the normalizing factor, exponents p and n are
constants characteristic of the given solid, and a. is related to a
certain characteristic temperature ( - 3 times smaller than Debye ' s).
Formulae for the internal energy, free energy, ent~-opy, and
specific heat of a solid were obtained.
V. D.
Card 1/1

SIROTA, N.N.; BERGER, L.I.
Thermal conductivity of indium and gallium arsenides and
indium aelenida and telluride. Inzh.-fiz.zhur. no.11:117-120
N 15 8. (MIRA 12:1)
1. Fiziko-tekhnicheskiy ingtitut AN BSSH, g. Minsk, i Inatitut
tevetzWkh metallov I volota iment M.I. Kalinina, g. Moskva.
(Heat--Conduction) (Indium compounds) (Gallium compounds)

SIROTA, N.N.; PASHIYtfSFV, Yu.I.
Determining the characteristic temperature and coefficients
of linear expansion for Indium and gallium arsenides (with
summary in Inglish]. Insh.-fis.zhur. no.12:38-42 ' 58,
(MIRA 11:12)
1. Fisiko-tekhnicheakiy institut AN BSSR, g. Minsk, *skov-
skI7 institut tsvetmykh metallov i zolota iment M.I. Kalinine,
g. Moskva.
(Indium arsenide) (Gallium arsenide)

C. 1 ~ S Sirota, 11. N., Shibayeva, A. V. S/170/59/002/10/009/020
B115/BOO7
-V'
TITLE: The Occurrence of Dislocations in Single Crystals of Silicon
PERIODICAL: Inzhenerno-fizicheskiy zhurnal, 1959, V ol 2, Hr 10,
PP 57-61 (USSR)
ALISTRACT, In the present paper an experiment is described, which was
undertaken with a view of determining tne orientation and, at
the same time, also the occurrence, the character, and the
density of dislocations in a silicom.-single crystal by means o
- of
the etching method. As etching,agent, aqueous solutionG
KOH and NaOH with a concentration of from 20 to 40,5L wore used,
The production of the samples is'described. At ever-.*,.section
the orientation of crystallographic directions was 'determined
by neans of the Ilepiaram" (diffraction pattern) method irith an
accuracy of up to 10. Microphotographs of the surfaces of
cilicon after etching in 11 40% aqueous NaOH-solution with dif-
ferent duration of the etching process and at different anCles
Ot formed by the (111) plane with the section (Fig 1) as well
as a microphoto&raph and an "epigram" of a thin section of the
silicon surface after etching for 25 minutes in a 30% aqueous
Card 1/2 HaOll-solution (Fig 2) are given. The microphotographs of the

The Occurrence of Dislocations in Single
CryStals Of SilicOn
AS.)OCIATION:
S/170/59/002/10/009/020
B115/BO07-
silicon after etching in a mixture of hy0rofluoric
acid and njAric acid (1:2) are also (;iven.(Pif; 3). The ahape
aUorns tire due to dislocation.,;
and the -imeirztacc, of the etch.-)
and depend on 111-~ic orientation of the nicro-
f
section plane. Yhere are -nd 3 references, I of
Which is Soviet. rv
Belorusskiy gosudarstvennyy universitet im. V. 1. Lenina,
g, Minsk (Belorussian State University imeni V. I. Lenin,
City of MinskT
Card 2,

24~, 68769
LUTHORS: Barger, L. I., Sirota, No Ng S/170/59/002/11/016/024
B014/BO14
TITLE: Some Properties of the Alloys of the I-nAs - In.Se System
PERIODICAL. Inzhonerno-fizicheakiy zhurnal, 1959, Vol 2, Nr lip pp 102-105 (USSR)
ABSTRACT: In this article the authors study the heat conductivity and the
linear expansion coefficient of a number of alloys of the quasi-
binary section of tWkn-As-Se system. The production of these
alloys and the device used to d8termine their heat conductivity
within the temperature range 80 K - 3000K were described in an
earlier paper by the authors (Ref 1). It is shown that heat con-
ductivity decreases considerably with increasing content of
In2Be3 (Fig 1). The device used to determine the linear expansion
coefficient was described in the article mentioned in reference 2.
The results contained in the diagram of figure 2 show an increase
in the linear expansion coefficient with rising content of 1n2Se3'
Table I lists the coefficients of heat conductivity and expansion
for the various temperatures. It may be seen that with rising
temperature the linear expansion coefficient of pure InAs in-
Card 1/2 creases much faster than that of alloys or pure In 2Be 3* In study-

68769
Some Properties of the Alloys of the InAs - In2 Se3 S/170/59/002/11/016/024
System B014/BO14
ing the relationship between thermal conductivity and expansion
at 3000K the authors found the same relation between the square
of the expansion coefficient and the reciprocal value of beat con-
ductivity as V. P. Zhuze (Ref 2) Additional experiments performed
in the temperature range 100 - 3;00K furnished the same result.
The corresponding values are summarized in table 2. The authors
thank N. A. Goryunova and S. 1. Radautsan for the samples obtained
from them and for their interest displayed in the present paper.
There are 3 figures, 2 tables, and 5 references, 3 of which are
Soviet.
ASSOCIATION: Institut tsvetnykh metallov i zol.ota im. M. I. Kalininap g. Moskva
(Institute of Nonferrous Metals and Gold imeni M. I. Kalinin,
City of Moscow Otdel fiziki tverdogo tela i poluprovodnikov AN
BSSR, g.Minsk ~Branch of Solid State Physics and Semiconductors
of the AS BSSR, City of Minsk)
Card 2/2

PASHIWSEV, Yu.I.; SIROTA, N.N.
Temperature relationship between cbaracteristic temperatures
and coefficients of linear expansion of aluminum. gallium. and
indlum arsenides. Dokl.AN BSSR 3 no-2:38-4o F '59.
(MIRA 12:5)
(Arsenides)

MOLODTSOVA, L.V.;,,.,SIROTA, N.N.
Slectric conductivity and magnetic properties of magmeslum-manganes
ferrites containing 43 and 457, reo3. Doki. AN 138SR 3 no.8:336-337
Ag '59. (MIRA 12M)
(Farrates-Blectric properties)

GOWLOBOV, Ye.M.; SIROTA, N.N.
Characteristic temperature and coefficient of linear expansion of
germanium. DokI.AN BSSR 3 no-9:368-369 B 159. (MIPA 13:2)
(Germanium) (1zpansion of solids)

MI,ODTSOY.A, L.Y. ; SIROTA, N..N~. .-
Pulse response of mgnesium-mangannse ferrite cores con-
taining 43 per cent N2 03* DokI.AII BSSR 3 no.11:440-441
N 159. OGRA 13:4)
(Ferrates-Blectric properties)

24(6,8) SOV/170-59-5-14/18
AUTHORSt Sirota, N.N., Berger, L.I.
TITLE: Coefficients of Linear Ex-nansion of Indium and Gallium Areenid*s
and Indium Telluride, and Their Relation *,o;~- Ueat Conductivity
(Koeffiteiyanty lineynogo rasshireniya areenidov indiya i galliya
i tollurida indiya i ikh Bvyazl a toploprovodnoattyu)
PERIODICAL: Inzhonerno-fizicheakiy zhurnal, 1959, Nr 5, PP 104-106 (USSR)
ABSTRACT: The authors determined the values of linear expansion coefficients
for InAs, In2T*3 and GaAs and plotted them versus temperatures in
Figure 2. The measurement were performed with a quartz dilatometer'
in the tomperatur* range from 100 to 6000C. The character of the
temperature dependence of the coefficient value for indium telluride
differs somewhat from that observed with arsonides, which is 9x-
plained by a difference in the typos of crystalline lattice. The
results obtained made it possible to confirm an assumption expressed.
b Ya.I. Fronkell CRef 5.7, V.P.Zhuze CR~f 6-7 and T.A. Kontorova

Ref 7-7 on the relation between the coefficient of linear expaasioi
?
cL and coefficient of heat conductivity X . Figure 3 represents this
Card 1/2 relation which can be -nalytically expressed as followas
,
1
Z '

SOV/170-59-5-14/18
Coefficients of Linear Expansion of Indius and Gallium Arsenides and Indium
Telluride, and Their Relation to, Heat Conductivity
which relation was proposed previously by V.P. Zhuze. The authors
express their gratitude to N.A. Goryunova, B.T. Kolom-lyets and 45-
T.A, Kontorova. for their interest in the present invesiigation.
There are 2 graphs, 1 diagram and 8 references Soviet.
ASSOCIATIONS; Institut tevetnykh metallov i zolota imeni Kalinina (Institute
of Nonferrous Metals and Gold imeni Kalinin), Moscow;
Otdel fiziki tverdogo tela i poluprovodnikov AN BSSR (section
of Physics of Solids and Semiconductors of the AS Belorusel"
SSR), Minsk.
Card 2/2

240, 6)
SOV/170-59-6~19/20
AUTHORS: Sirota, N. olodtsova, L.V.
TITLE: Investigation of Magnesium-Manganese Ferrites Containing 40% Fe2 03
PERIODICALz Inzhenerno,fizicheakiy zhurnal, 1959, Nr 6, pp 116-120 (USSR)
ABSTRACT: In view of considerable technical importance of magnesium-manganese
ferrites and insufficient studies of their properties, the authors
undertook this attempt to investigate the changes in their magnetic
characteristics due to changes in the Xg0/MnO.ratio under constant;
Fe203 content. Magnesium oxide, commercial iron oxide and manganese
carbonate were used as initial materials whose relative concentration
in various ferrites investigated is given in Table 1. Changes in
specific electric resistance, coercive force, maximum and residual
induction in dependence on the composition of,the specimens-are
Shown in Figure 1; changes in the values of Curie point,coefficient
of the square shape of hysteresis loops,'initial permeability and *
the area..o f hysteresis loops in depend- ce on canLpoaition are shown
in Figure'2, and changes of.induction In dependence on temperature
C.ard 1/2 in a field of 8 oersted are shown in Fi'gure 3. Of considerable

SOV/170-59-6-19/20
Investigation of Magnesium-Manganese Ferrites Containing 40$ Fe 203
interest is a peak in the curve of hysteresis loop areas at 20%
concentration of NnO in Figure 2. Various shapes of hysteresis
loops are shown in Figure 4. The authors thank A.I. Gurlyanova
for assistance in preparing the specimens.
There are 4 graphs, 2 tables and 8 American references.
ASSOCIATION: Institut tevetnykh metallov i zolota im. M.I. Kalinina (Institute
of Non-Ferrous Metals and Cold imeni M.I. Kalinin), Moscow;
Otdel fiziki tverdogo tela i poluDrovodnikov AN BSSR (Department
of Physics of Solids and Semiconductors of the AS Belorussian SSR),
Minsk.
Card 2/2

SOV/126-7-6-12/94
&THORS:Sirota, N.-N., Lekhtblau, Ye.A. and Smolyarenko, E.M.
TITLE: Influence of Ultrasonic Action in the Crystallization
Process on the Structure and Properties of Aluminium
Silicon Alloys
PERIODICAL: Fizika metallov i metallovedeniye, 1959, Vol 7, Nr 6,
PP 879-884 (USSR)
ABSTRACT: Experiments were carried out on the ultrasonic apparatus
of the Scientific Research Technological Institute (Fig 1).
It consisted of a generator, a 3 kW amplifier and a
magnetostriction transformer and rectifier. Twelve Al-Si
alloys were made for the experiments with the following
silicon contents: 2.5; 5; 7-5; 10; 11; 11.6; 12; 12.5;
15; 17.5; 20 wt.%. The alloys were heated to 250"C
above the melting point and were cast into a mould which
had been pre-heated to 400*C and dressed with chalk.
Control runs have shown that dressing with chalk has no
influence on the crystallization process and the structure
of the ingot but it does prevent sticking to the mould
,oralls. Ultrasonic waves were apglied up to the point of
Card 1/4 casting. The frequency of oscillation was 18 to 18.5 khertz,
changing during the crystallization process due to an

SOV/126-7-6-12/24
Influence of Ultrasonic Action in the Crystallization Process on
the Structure and Properties of Aluminium Silicon Alloys
increase in the quantity of the solid phase and to the
change in the acoustic parameters of the system. The
power supply to the emitter was 1.0 to 1-5 W. As the
alloys changed to the heterogeneous pasty state at the
end of the crystallization process, the ultrasonic waves
were as a rule discontintled. Aftev perfecting the method
a series of experiments with alloys of the Al-Si system
was carried out. Six ingots were cast from each alloy,
three being exposed to ultrasonic waves and three for
reference purposes. From these ingots, specimens were
made for tensile, impact and hardness testing and also
for macro and micro-sections. It was noticed that alloys
with low Si content (UP to 7.5%) did not swell up -
under the action of ultrasonic waves until the ingot had
completely solldlfled. The surface of the exposed ingots
was smooth and even, whereas the surface of the reference
specimens was rough. In Fig 2 the macrostructure of an
AI-Si alloy containing 2.5% Si is shown (a - non-exposed
and b - exposed specimens). In Fig 3 the macrostructure
Card 2/4 of an Al-Si alloy containing 11.6% Si is shown (a - non-

sov/126-7-6-12/24
Influence of Ultrasonic Action in the Crystallization Process on
the Structure and Properties of Aluminium Silicon Alloys
exposed and b - exposed specimens). In Fig 4 the
macrostructure of an Al-Si alloy containing 15% Si is
shoi,rn (a - non-exposed and b - exposed specimens).
In Fig 5 the influence of exposure on the change in
ultimate tensile stress of Al-Si alloys with change in
composition is shown (exposed specimen - upper curve).
In Fig 6 the change in impact strength of Al-Si alloys
with change in composition is shown (exposed specimen -
upper curve, non-exposed specimen - lower curve). The
authors arrive at the following conclusions:
1) As a result of the action of ultrasonic waves on the
crystallization of Al-Si alloys, within the range 2.5 and
20% Si, a sharp refinement of the primary grain and
microstructure takes place.
2) The ultimate tensile stress of exposed ingots increases
on the average by 11% and the percentage elongation by 75%.
3) A general increase in hardness and impact strength
Card 3/4 of the alloys is achieved.

SOV/126-7-6-12/24
Influence of Ultrasonic Action in the Crystallization Process on
he Structure and Properties of Aluminium Silicon Alloys
There are 6 figures, 1 table and 3 references, 1 of
,which is Soviet and 2 German.
ASSOCIATION: Moskovskiy institut tsvetnykh metallov i zolota imeni
M. I. Kalinina (Moscow Institute of Non-ferrous Metals
and Gold imeni M. I. Kalinin)
SUBMITTED: December 7, 1957 (Initially)
July 29, 1958 (After revision)
Card 4/4

.5 M'
AUTHORS: Sirota, N. N., Academician, AS B35R, SOV/20-127-3-37/71

TITLE: Dynamic Displacements of Atoms and the Linear Expansion
Coefficient of Aluminum-, Gallium-, and Indium Arsenides
PERIODICAL Doklady Akademii nauk SSSR, 1959, Vol 127, Nr 3, pp 609-611 (USSR)
ABSTRACT: In continuation of obserrations made by Sirota (Ref 1) the
connection between root mean square atomic displacems nts in the
crystal lattice of the semiconductor compounds mentionlid above
and the linear expansion coefficient is investigated. For the
determination of the characteristic temperature and the linear
expansion coefficient the data of the X-ray structural analysis
of the compounds mentioned were used. Table 1 shows the data
obtained from X-ray pictures, the centers of temperature inter-
vals for which the characteristic temperature 0 was calculated,
the logarithm of the ratio of the peaks of the blackening lines
IT1
ln - determined from the microphotogram, root mean square of
I
)
-
T2
2
the dynamic displacement U
I the linear expansion coefficient CC
Card 1/3 T

D.ynamic Displacements of Atoms and the Linear Expansion SOV/20-127-3-37/71
Coefficient of Aluminum-, Gallium-, and Indium Arsenides
and its square. From the theory of the thermal dissipation of
X-rays by Debye-4Yaller, the connection of line intensity at
various temperatures (Tj and2.T2) is given by the expression -
2 CU _ -2 2
In IT1 . 16yr T, sin
UT, (1), and the dependence of UT
IT2 2 3h21
on the characteristic temperature 'T ~ - 2 2 ~(X) + fl T2)
- 47 mk hy
rage mass of the c
vrith + (x)-Debye function, m - ave ttom x
k T
and Y9 limit frequency of the atoms. From the relation (2), to'
which attention had already been dr&7n by Ioffe (Ref 7), it may
be seen that with an increase of 2 the characteristic temperaturse
UT
and thus also the threshold frequency decreases. Figure 1 shows
the dependence of u 2 on T. The greatest u 2was found in the case
of indium arsenide, the smallest in that of AlAs. With increasing
temperature, u2 in the case of all compounds increases according
Card 2/3 to a similar layr. Figure 2 shows the dependence of

Dynamic Displacements of Atoms and the Linear Expansion SOV/20-127-3-37/71
Coefficient of Aluminum-, Gallium-, and Indium Arsenides
2 2
u onot . The values are on a straight line passing through the
origin of coordinates. Thusq there is direct proportionality
for the investigated compounds within the temperature interval
of 200-6500. There are 2 figures, 1 table, and 7 references,
6 of which are Soviet.
ASSOCIATION: Gosudarstvennyy nauchno-issledovatellskiy i proyektnyy institut
redkometallicheskoy promyshlennosti (State Scientific Research
and Kanning Institute for the Rare Meta3sIndustry)
SUBMITTED: May 5, 1959
Card 3/3

PHASE I BOOK EXPLOITATION SOV/4893
Vsesoyuznoye soveshchaniye po fizike, fiziko-khimicheskim svoystvam
I ferritov i fizicheskim osnovam ikh primeneniya. 3d, Minsk, 1959
Ferrity; fizicheskiye i fiziko-k-himicheskiye svoystva. Doklady
(Ferrites; Physical and Physicochemical Properties. Reports)
Minsk, Izd-vo AN BSSR, 1960. 655 P. Errata slip inserted.
4,000 copies printed.
Sponsoring Agencies: Nauchnyy sovet po magnetizmu AN SSSR. Otdel
fiziki tverdogo tela I poluprovodnikov AN BSSR.
Editorial Board: Resp. Ed.: N. N. Sirota, Academician of the
Academy of Sciences BSSR; K. P. Belov, Professor; Ye. I. Kondor-
skiy, Professor; X. M. PoliVAngv; Professor, R. V. Telesnin, Pro-
fessor; G. A. Smolenskiy, Professor; N. N. Shollts, Candidate of
Physical and Mathematical Sciences; E. M. Smolyarenkoo,- and
L. A. Bashkirov. Ed. of Publishing House; S. Kholyavskiy; Tech.
Ed.: I. Volokhanovich.

Ferrites (Cont. sov/4893
PURPOSE: This book is intended for physicists, physical chemists,
radio electronics engineers, and technical personnel engaged In
the production and use of ferromagnetic materials. It may also
be used by students In advanced courses In radio electronics,
physics, and physical chemistry.
COVERAGE: The book contains reports presented at the Third All-
Union Conference on Ferrites held in Minsk, Belorussian SSR.
The reports deal with magnetic transformations, electrical and
galvanomagnetic properties of ferrites, studies of the growth
of ferrite single crystals, problems In the chemical and.physi-
cochemical analysis of ferrites, studies of ferrites having
rectangular hysteresis loops and multicomponent ferrite systems
exhibiting spontaneous rectangularity, problems in magnetic
attraction, highly coercive ferrites, magnetic spectroscopy..
ferromagnetic resonance, magneto-optics, physical principles of
using ferrite components In electrical circuits, anisotropy of
electrical and magnetic properties, etc, The Committee on Mag-
netism, AS USSR (S. V. Vonsovskiy, Chairman) organized the con-
ference. References accompany individual articles.
4.ftr1=2?4_8

Ferrites (Cont.)
TABLE OF CONTENTS:
SOV/4893
4M
Sirota The Third All-Union Conference on Ferrites
41n`ftroduc~tory -hemarks ) 3
Turov, Ye. A., and Yu. P. Irkhin. Phenomenological Theory of
the Electrical Conductance of Ferrites and Antiferromagnetics 7
Tyablikov, S. V. A Method of Calculating the Thermodynamic
Characteristics of Ferromagnetics In a Wide Temperature Range n
Akulov, N. S. Theory of the Rectangular Hysteresis Loop 23
Turov, Ye. A., and A. I. Mitsek. Thelory of the Temperature
Dependence of the Magnetic Anisotropy CorAtant of Ferromag-
netics and Ferrites 28
Vlasov, B. V., and B. Kh. Ishmukhametov. Rotation of the
Polarization Plane of Elastic Waves In Magnetically Polarized
Magnetoelastic Media 41
carT-37t7ff-

Ferrites (Cont.) SGV/4893
Syrkin, L. N. Discussion of the [Preceding] Report
Physicochemical Nature of Ferrites and
Their Properties
Sirota N. N., E. A. Ovseychuk, and N. P. Tekhanovich.
t~_
So ;_P~ec~h~~aAties of the Magnetic Transformation of
Ferrites at Curie Point
Belov, K. P., and R. Z. Levitin. Magnetoelastic Phenomena
In Antiferromagnetics
Bel-ov, K. P., V. F. Belov, A. V. Zalesskiy, and A. A. Popova.
Magnetic and SHP Properties of Magnesium-Manganese Ferrite
Single Crystals
Titova, A. G. Growing Ferrite-Single Crystals With
Structure of the Garnet Type *
48
50
74
78
83
89

Ferrites (Cont.) SOV/4893
Perekalina, T. M., and A. A. Askochenskiy. Magnetic
Anisotropy of Single Crystals of Iron-Cobalt Ferrites 95
Tretlyakov, Yu. D., and K. G. Khomyakov. Experiment in
Producing Ferrites by Nondif-fusion Methods 100
Bashkirov, L. A., A. P. Palkin, and N. N. Sirota. Formation
of Ferrites During the Dee ompos it io_n__oT1ra~s ~ ill
Yevseyev, V. I., and I. I. Petrova. Investigation of the
Properties of Nickel-Zinc Ferrites of Near-Stoichlometric
Composition 117
Reznitskly, L. A., and K. G. Khomyakov. Calor *Imetric De-
termination of the Heat of Formation of Ferrites 124
Basikhin, Yu. V. The Chemical Nature of Some Magnetic
Spinels of the Diagram MgO-MnOt-Fe2o3' Spinels With Rec-
tangular Hysteresis Loop 129

Ferrites (Cont.)
SOV/4893
Bulgakova, T. I., and L. S. Guzey. Magnetochemical In-
vestigation of Nickel-Cobalt Ferrites 137
Yevseyev, V. I., and A. M. Gordina. New Ferrites for the
100-1000me Frequency Range 142
Rabkin, L. I., and Z. I. Novikova., Some Properties of
Nickel-Zinc Ferrites, Dependent URpn the Conditions of
Synthesis and Their Content of Fee' Ions 146
Belov, K. P. Discussion of the [Prec eding] Report 158
Bashkirov,. L. A.J9 A. F. Falkin, and N. N. Sirota. X-Ray
Structural Investigation of the Ternary System
NiFe2O4-MgFe2O4-ZnFe2O4 159
Molodtsova, L. V., and N. N. Sirota. Investigation of
the Effect of Compositl-onon th-e-Yr-operties of Magnesium-
Manganese Ferrites 164

Ferrites (Cont.)
SOV/4893
Latsh, V. V., Ts. M. Sakhnovich, and B. Kh. Somin. De-
composition of Manganese-Zinc Ferrite During Heat Treatment
In an Oxidizing Atmosphere 170
Fiskarev, K. A. Effect of Cooling Rate on the Magnetic
Properties and Phase Compos.1tion of the System NiO-ZnO-Fe2o3 174
Bashkirov, L. A., A. P. Palkin, anq_Y.__N,_*Jx_Qja, Investi-
gation of the Magnetic Properties of the Ternary System
NiFe204 MgFe204-ZnFe2O4 183
Kontorovich, L. I. Some Properties and Microstructure of
Magnesium-Chromium Ferrites 196
Miryasov, N. Z. Investigation of the Constant of the Mag-
netic Anisotropy of Polycrystalline Nickel and Magnesium
Ferrites by a Method of Approaching Magnesium Saturati-on 199

Ferrites (Cont.)
SOV/4893
Sirota N. N., and E. Z. Katsnellson. Temperature De-
Magnetic Permeability of Nickel-Magnesium-
pendence of
Zinc Ferrites 242
Mishin, D. D., N. T. Plastun, and E. E. Adamovich. Tem-
perature Magnetic Hysteresis in Nickel-Zinc Ferrites 249
Mishin, D. D., L. V. Nikonova, and T. I. Bychkova. The
Effect of Omnilateral Compression and Temperature on the
Magnetostatic Properties of Nickel-Zinc Ferrites 253
Kovtun, Ye. F., and A. S. Millner. Magnetic Anomalies of
Iron and Cobalt Ferrites 258
-Sirota, N. N., and E. Z. Katsnellson. On the Electrical
Conductance or Nickel-Magnesium-Zinc Ferrites and Its
Temperature Dependence 263

27374
8/194 61/000/003/040/046
D20,7306
AUTHORS: Sirota,, N.N., Lekhtblau, Ye.A. and Smolyarer&o, E.M.
TITLE: Crystallization of alloys in an ultrasonic field
PERIODICAL: Referativnyy zhurnal. Avtomatika i radioelektronika,
no. 3, 1961, 20, abstract 3 E144 (V sb. Kristalli-
zatsiya metallov, M., AN SSSR, 1960, 263-271)
TEXT: An investigation has been made into the effect of ultra-
sonic oscillations at a frequency of 19 Kc/s on the process of
crystallization. The alloys I A11 _Sit Al-Cu, Al-Mg were heated to
about 50-IOOOC above their melting point and then poured into a
casting mould heated to 4000C. The mould was then screwed onto the
concentrator. The ahalysis of the smples thus obtained has shown
that the sedimentation shell concentrated in the upper portion of
the ingot under the effect of ultrasound and was evenly distributed
throughout its volume without ultrasound. By comparing the macro-
graphs it was determined that sound makes the structurc of the inaot
Card 1/2

27374
S/1 61/C)0/003/040/,346
D209X3
Crystallization of alloys... 1 06
finer. The mechanical tests with samples show an increase in
strength by 10-157o. The effect of ultrasound results in dispersion
and in a uniform distribution of impurities and consequently in
even formation of crystals. It also irLcreases the probability of
spontaneous generation of cxnistallization centers. 3 fl',gures. 11
references. fiv)stracter's note; Complete translatiolij
Card 2/2

SIROTA, N.N.; OLZKMVICH, N.M.; SHEILWI, A.U.
Distribution of electron densitv in silicon. Dok1AN BSSR 4 no.4:
144-147 Ap 160-0 (MIRA 13:10)
1. Otdel fiziki tverdogo tela i poluprovodnikov AN BSSR.
(Silicon)

80067
00
AUTHORS: -Birota, N. N., Academician of the S/02o/6o/132/01/042/064
AS 3SSK*;-T'e1fl%ovich, N. N B004/J0O7
Sheleg, A. U. ~1
TITLE: The Determination of the Distribution of Electron Density in
Crystals
PERIODICAL: Doklady Akademii nauk SSSR, 1960, Vol 132, Nr 1, pp 160 - 163
(USSR)
TEXT: The electron density distribution and its value at a certain point
Xv Y9 Z9) is determined by summation of ~ three-dimensional Fourier series
1). The number of terms in this series is limited by the number of experi-
~
mentally determinable reflections. The authors mention the methods which were
suggested for the purpose of further increasing the precision of the determi-
nation of electron density (extrapolation of the f-curve,introduction of a-'
temperature coefficient), and point out the errors arising in this connecifton.
They then explain their method, which makes use of the value of the atomic
scattering factor, which may be determined by means of CuK.,fradiation as well
as'by less hard radiations. The authors divide the value of the scattering
where
factor into two parts with a density distribution gf(r ) and '(1)
1 32(r)'
corresponds to the density of the electrons near the atom and is de s cribfr~dlby
Card 1/ 3

80067
The Determination of the Distribution of S/020/60/132/01/042/o64
Electron Density in Crystals BO04/BO07
2
r
the Gauss function A exp(-.rr on the other hand, corresponds
to the electron density of the outer e ec rons, which, in the case of high
reflection indices, cause only a slight change in the course of the f-curve.
Figure 1 shows the course of the f I- curve and the f2- curve for diamond, shere
f - f 1 = f2' f2 corresponds to the unknown density f2 of the outer electronsp
which may thus be determined from the differe ce. For the electron density in
an arbitrary point of the crystal, P~) = ~1( ) + ~2(1) . This equation is ex-
panded into a series (6). Figure 2 shows the results obtained by calculating
the electron density for diamond in the direction E1119 according to the
method suggested and by means of a temperature factor at 75000K and 200C.
Figure 3 shows the calculation for the points 0) 0, 0; 1/8, 1/8, 1/8 and 1/2,
1/2, 1/2 according to both methods between 0 and 15000'K. There are 3 figures,
and 18 references, 7 of which are aoviet,
Card 2/3

8oo67
The Determination of the Distribution of S/02 60/132/01/042/064
Electron Density in Crystals B004YB007
ASSOCIATION: Otdel fiziki tverdogo tela i poluprovodnikov Akademii nauk BSSR
(Department of the Physics of Solids and semiconductors of the - ---
Belorussian Academy of Science~i-
SUBMITTED: January 59 1960 ~K
Card 3/3

4
S/02 60/134/006/026/03,
B004YB054
AUTHORS: Sirota, N. N.,--Academician of the AS BSSR and Tono-van, A.A.
TITLE: Visualization of Dislocations and Some Forms of Etch
Patterns on Single Crystals of Silicon
X
PERIODICAL: Doklady Akldemii nauk S9SR, 1960, Vol. A13 9 No. 6,
pp. 1397-1398
TEXT: The authors thoroughly studied the etch patterns produced on sili-
con samples by dislocation and other disturbances (Ref. 1). The samples
were cut out of single crystals in the (111) plane. The orientation of
the crystals was carried out by means of an apparatus described by
I. Ye. Voytsekhovich. The mechanica 'I polishing was followed by a chemical
polishing with a 0mixture of concentrated hydrofluoric, nitric, and acetic
acids at 30 -- 35 C (for 2-3 min), and then by etching in a dilute acid
solution (for 1.5 - 2 min). The etch patterns are described, and their
microphotographs are shown in Figs. 1, 2: right- and left-handed spirals
which, externally, often change into triangular terraces; spirals with
new spirals becoming visible at both ends in planes perpendicular to each
other;/Superposed terraces; and (in KOH) polygons with sides parallel to
Card 1 2

Visualization of Dislocations and Some Forms S/020/60/134/006/026/031
of Etch Patterns on Single Crystals of Silicon B004/BO54
one another, Measurements showed a decrease in microhardness near the etch-
ing furrows (Table 1). There are 2 figures, 1 table, and 5 references:
2 Soviet, 1 US, 1 British, and I Japanese.
ASSOCIATION: Otdel fiziki tverdogo tela i poluprovodnikov Akademii nauk
BSSR
(Branch of Solid State Physics and Semiconductors of the
Academy of Sciences BSSR)
SUBMITTED: June 17, 1960
Card 212

86843
S/020/60/135/005/034/043
B004/BO75
AUTEORS: t:~N; ~N Academician of the AS BSSR and Sheleg, A. U.
TITLE: Distribution ofthe Electron Density in Germanium
PERIODICAL: Doklady Akademii nauk SSSR, 1560, Vol. 135, No- 5,
PP. 1176-1178
TEXT: The author iyotematically investigated the distribution of electron
density in semiconductors. The present paper give@ some results of the de-
termination of the atomic scattering factor f as a function of
Y:h 2 and of the distribution of electron density in germanium. The in-
i i
vestigation wa:9 carried out with n-type germanium monocrystale pulverized
up to 5-8A (resistivity 60 ohm-cm). The X-ray pictures were taken in
Cu K CK radiation at room temperature by means of a YPC-5014(URS-50I) re-
corder. A 20-V thick nickel foil served as a filter. The reflection inten-
sity Ihkl was calculated on the strength of the peak areas of the 3nn-09
(EPP-09)-type recording electronic potentiometer. To find out the absolute
Card 1~L

86843
Distribution of the Electron Density in S/020/60/135/005/034/043
Germanium v B004/3075
values, the Ihkl of Ge was compared with the 220- and 311-lines of Si and
NaCl, which served as standards. The absorption coefficient of Ge was de-
termined from the reduction of the intensity of the primary beam during its
passage through 50-iOO g thick lamellas Results are given in Figs. 1, 2,
4. On the level of electron density Of ;-5 el/A-'~ a Ge-ion diameter of
0-5 A is obtained, and on the level of 0.05 el/A~, one of 2 A. For a com-
parison, the correspon(jing values for diamond 0.20 - 0.25 and 1.25 A) and
silicon (0-4 and 1.75 A) are given. Yu. N. Shuvalov is mentioned* There
are 4 figures and 6 references: 3 Soviet and 3 German.
ASSOCIATION: Otdel fiziki tverdogo tala i poluprovodnikov Aka4emii nauk
BSSR (Department of Solid-state Physics and Semiconductor
Physics of thii Academy of Sciences BSSR)
SUBMITTED: September 10, 1960
Card 2,14

S/058/6Z/000/008/070/134
A061/A101
AUTHOR: Sirota, N. N.
TITLE: On some basic problems of the theory of crystal origin and growth
PERIODICAL: Referativnyy zhurnal, Fizika, no. 8, 1962, 7, abstract 8E59
(In collection: "Rost kristallov. T. 3", Moscow, AN SSSR, 1961,
211 - 213. Discuss., 214 -.218)
Ta,T: Deficiencies in modern conceptions of crystal origin and growth
are considered. It is noted that many theories of crystallization do not take
into account, among other factors, the probability of nucleation as-depending
on the composition, the ordering degree of initial and nascent phases, and the
probabilities of concentration fluctuation. The role of dislocations in the
surface layer of the growing crystal.also requires a careful analysis.
[Abstracter's note: Complete translation]
Card 1/1

AKULOV, N.5., a-kademik; GINZBURG, A.S., doktor tekhn.zAuk, prof.;
KOSTERIN, S.I., doktor takhn.nauk, prof.; LYKOV, A.V.,
akademik; PCHERMSEV, A.A., doktor fisiko-matematicheakikh
nauk., prof.; SIROTA, N.N., akademik; SHEVELIKOV, V.I;., doktor
tekhanpiakl, 'prof-.'
Aleksandr Savvich Predvoditelev; on his 70th birtbday. Inz.-fiz.
~hur- 4 no.12:106-1)08 D 161. 1 (14IRA 14: 11)
1. Akademiya naUk BBSR (for Akulov,, Lykov, Sirota).
(Predvoditelov., Ale4andr Savvich., 1891-)
i:;. 41.1

89737

24-7700 1143, JOL13, 'so S/020/61/136/003/025/027
B004/BO56
AUTHORS: Sirota, N.
N-.- M. N., Academician of the AS BSSR, and Olekhnovich,
TITLE: Electron Density Distribution in Indium Arsenide
PERIODICAL: Doklady Akademii nauk SSSR, 1961, Vol. 136~ No. 3,
pp. 660-662
TEXT: It was the purpose of this work to ijari the factors to which the
I1V
specific physical properties of arsenides A with sphalerite structure
are due. This concerns the semiconductor properties, the markedly high
carrier mobility, and the great width of the forbidden band. The study
was carried out on a crystalline InAs (the synthesis is described in Ref.1
which was ground to fine powder (6 - 8g). X-ray diffraction patterns were
made at room temperature, and Cu Ka-radiation by means of a YPC-50-0
(URS-50-I) apparatus. Prom the experimental data obtained, the following
was calculated: The square of the structural amplitude p2 and the atomic
scattering factors fIn and fAs. Herefrom, the distribution of the electron
Card 1/0

89737
Electron Density Distribution in Indium S/020/61/136/003/025/027
Arsenide B004/BO56
density was obtained. Fig. 3 shows the distribution in the unit cell of
InAs in the plane (110). Fig. 4 shows the same in the plane (110) and the
direction Eiil] and 111~1- The results obtained are discussed. Special
attention is drawn to the "brid fell of the electron density /;hich takes
its course in the direction I ;n the interval 1/2 112 3/4 3/4 3/4,
attains a value of 0.20 electron/A-? at 5/8 5/8 5/8, and drops at the point
314 3/4 3/4 to 0.03 eletron/A3. This "bridge" does not exist in germanium.
Theldbridgell between the coordinates 000 and 1/4 1/4 1/4 in the direction
Ell was observed also in germanium, silicon, and diamond. The data
obtained will contribute towards clarifying the interatomic interaction
in InAs. There are 4 figures and 5 references: 4 Soviet and I German.
ASSOCIATION: Otdel fiziki tverdogo tela i poluprovodnikov Akademii nauk
BSSR (Department of Solid-state Physics and Semiconductors
of the Academy of Sciences BSSR)
SUBMITTED: September 16, 1960
Card 2/4

S/02 611136100410231026
d1-30 0 (44--c 16 Y.3., // 1/3 1 //SO) 3028Y3060
AUTHORS: Sirota, N. N., Academician AS BSSR, and Olekhnovich, ff. M.
TITLE: Electron Density Distribution in Gallium Arsenide
PERIODICAL: Doklady Akademii nauk SSSR, 1961, Vol. 136, No. 4,
pp. 679-881
TEXT: The specimens used for the experiment were purified by zone melting.
X-ray pictures were taken by CuKa radiation at room temperature and
recorded by a YM -50 (URS-50) recorder and a Geiger-MU'ller counter. The
line intensity was calculated from data recorded by the automatic
potentiometer MI-09 (EPP-O?~. The amplitude squares (F2) were calculated
for three types of lines: (F1 9 (F2), and (F2). Thetatomic scattering
factors f for gallium and arsenic 2ons were galcula ed for given F2 (Fig.1).
Fig. 2 shows the logarithm of the atomic scattering factors as a function
2 2 2
of E hi. If 2- hi >12 for arsenic and ith i ;;110 for gallium ions, 1n f
2
is a linear function of :Eh i. Fig. 4 shows the electron density
Card 1

88409
Electron Density Distribution in Gallium S/020/61/136/004/023/026
Arsenide B028/BO60
distribution among the ions Ga-As-Ga in the direction [111] (Fig. 4a), and
among GaAs ions in the direction [1133(Fig. 4b) in the (110) plane. In the
plane (110) between neighboring Ga ions and As ions in the direction
E111] , one finds "bridges" with increased electron density with a
minimum value of 0.49 el/A3 between the points 000 and 1/4 1/4 1/4.
Similar "bridges" are observed in S102 , Ge, and InAs crystals. In GaAs
InAs, electron density almost vanishes in the direction [11D near the
points 3/4 3/~ 3/4. In addition there are no "bridges" in GaAs in the
direction Ell3 , but an electron density minimum (groove) similar to
those found in Ge and Si crystals. For an electron density level of
0.5 el/A3, the ionic radius of Ga is 0.8 A, and that of As, 1.65 A. In
direction 1133 it is only 1.3 A for As. For an electron-density level
of 0.25 ejA3, Ga had an ionic radius of 1.3 A, while As had one
1.45 A. The following values were obtaine for InAs: for 0.5 el/A3f:
In = 0.9 A; As = 1.2-1.1 A; for 0.25 el/Ai: In - 1-5 A; As = 1.35 A.
There are 4 figures and 3 Soviet references.
and
the
Card 2/~
1:)

Electr on Density Distr.ibution in Gallium
Arsenide
88409
S/020/61/136/004/023/026
B028/Bo6o
ASSOCIATION: Otdel fiziki tverdogo tela i poluprovodnikov Akademii nauk
BSSR (Department of Solid-state Physiod and Semiconductors,
Academy of Sciences BSSR)
SUBMITTED: September 19, 1960
Legend to Fig. 1: F 2 _ f1h2 for GaAe (a)# atomic scattering factors (a)
i
forAs ions (I) and gallium ions (II) in GaAs.
Legend to Fig.*2: lnf - g::Eh2 in GaAs-for'As ions (o-o-o) and Ga ions
Legend to Fig. 4: electron density distribution in the directions.C1113 (a).. :2
and (d) in the (110) plane of a GaAs unit cell; 1) el/A.
2
Card 3/"

23816
t9D' I OL(J, 11 ~6, 11 S/020/61/136/001/021/023
B101/B231
Sirota, N. N., Academician AS BSSR, and Gololobov, Ye. M.
fitomic s-,attering factors and electror, der,~3i~y di.stribution
irt gallila-rit antimonid~_
1' i,'A L Boklady Akaderall nauK !jbb.K, v. i)d, no. i, i-
,: , - I L
I.- Present viork ~s the first of a ser-es or studies conducled o"
T
t 3pi,,;D,y distributir~n in antimonides of 3rd-group elements of
t e M, . DIe to t~ie -face that 'the ele.--tron. densi-,r distribu-
C I is, of lrit~~rest for the interatomic bond oroblem
Hype AIIIL'V,
d'IC t "11, c' V 'I-is compound Aa2 chus-in as the iir,3t for
t~l 1 e S At t,. -otlruf, redkikh, r,-i, (TIIZ:, itate 1)f
7 was obt~_,i neJ Icy zone melt ing. cru:3bed -,.-I an a., -,,A t o' VI
J 1, 1 n e, and trie fractici, with a particle size ran,,arig from
s subsequently subjected to examination. The X-riv -picture.--
mearts of a YPC-5GW (URS-500 apparatus-- with K radiation of
I a
of the unif :,r3ll (a =~'~~087 fc,.ird as t1az~ re2,n!t cf
lit

23316
S //020/051 /138/001/022 1/023
---at t eri n - fa, c t or,--, a%d e le c ~.ron
-D lic ti-ris. The cur es
:T,,
ation. agreed fairly well It previous ub a,
refe-rring to *he formula
~~'Irtlcttlral amplitude squared, (FL6. la)
constructed on the basia (~f the ab~,:olute refte:,t on ~!J-_nsities
-re
-he si - "Ich can be divid%,J by four, of the
7.,ith even indices, a m, r, f 7; n L I
retlections -.vith vdil -as ,,oeil as of "lose -,,ith even indices,
of .~,hich i.,; itrldiv!,sitle by 4_ The jame nrc.-dar~- waa applied for
o-:~.)~O-Ition of the atomic ~;.-.attering_ facteorz oC th~- SI) and Ga ions
T i-.. e 1 o 6 a r i ~ h m f t I~i e a t orm t;,, s - a t t e r i n f a:~ t rj rs7 are - beginning V~
I > .13 - i~ o o i t i on e d c n s t ra igh t 1 L n e s ( F 2 A deviation occurs
is indicative of a non-Gausslan d~stribuiori a' the electror
S'O Ga d to ca'culate electron density
The values of ard f were use
-he electron-densit- level
The results obtained showed that an t
ic-itron per 1 A3,, the ionic radius of Ga is about 0.5 A and that of
0~8 A, whereas for.the level 0.5 el/A3 these values are 0.75 and
ro.-,;)ectively, This reveala the relative c'haracters oil the concepts of
riid2u. and packing density. The noint to be stressed is that near
,~illle of the distance (5/8 5/8 5/8) the electror. density between the

23816
S/020/61/138/001/021/023
Atomic scattlerin~ 'actors and electron ... 3101/3231
Ga and Sb ions in the direction's [111( and [1131 in the (110) plane almost
vznishes. Fig. 4 rc-)reuents the electron denaity dist-rilcution in the
(110) plane of the GaSlo unit dell. Attention is dra-.7n to the "bridges" of
increased electror den-4ty batveen adjacent Ga- and Sb ions. The autbors
believe that the results of the present work vill offer a better insight
into the charactez- of interatomic interaction with regard to the physical
properties of GaSb. Th eve are 4 1 igutes - and 5 ref erences :4 SOVIet-bloc
and 1 non-Soviet-bloc. ..
ASSOCI!.TION: Otdel fiziki tverdogo tela i,poluprovodnikov Akadenii nauk
BSSR (Division.of Solid StatePhysics and Semicondu8tors of
Academy of Sciences, BSSR).
SUBIJITTED- December 12, 1960
t~
Card 3/7

SIROTA, N.N., akademik, red.; KHOLYAVSKIY, S., red. izd-va; VOLOKHANOVICH'I.
red.
(Crystallization and phase transitions]Kristallizatsiia i fazo-
vye perekhody. Minsk, Izd-vo Akad. nauk BSSR, 1962 "4 P.
iMIRA 16:2)
1. Akademiya nauk Beloruaskoy SSR (for Sirota).
(Crystals-Growth)

L 18449-63 EWP(q)/EWT(1)/EWT(m)/BDS
ACCESSION NR: AT3001892
AUTHOR: Sirota, N. N.
AMcASD/ESD-3/IJP(C) JWIJD
S/291Z/62/000/000/0011/0058
7/
TITLE: Current status and problems of the theory of crystallization.
SOURCE: Kris tallizatsiya i fazovy0ye perekhody* -Minsk, Izd-vo AN BSSR, 1962i
11-58
TOPIC TAGS: crystal, crystallization, growing, kinetics, thermodynamics,
nucleus, crystallization nucleus, surface energy, phase, boundary, electrocrys-
tallization, diffusion, heat transfer, mass transfer, lattice, phase diagram,
metastable, metastability, eutectic, eutectoid, autocatalytic, phase transformation.
ABSTRACT: This state-of-the-art survey paper embraces both the fundamental
problems of crystallization and its many direct or indirect links with many techno-
logical and industrial processes, phenomena of nature around us, and the biosci--
ences. The paper does not touch upon certain special fields of crystallization,
such as in the process of zone melting, continuous casting, etc. Literature
sources are cited extensively. (I) The kinetics of crystallization processes. The
development, during the 19201 s and 301 s, of an understanding of the laws governing
the crystallization process with time, is broken down into the investigation of the
Card l/ 8

L 18449-63
ACCESSION NR: AT300189Z
kinetics of isothermal crystallization, investigations of topochernical W chemic.-J
reactions, and others. The theory of the kinetics of crystallizatio;i-has achieved
significant progress to date, but is still far from perfect. In current theory,. ,
phase transformation is regarded as proceeding rigorously in isothermal conditions
and, with few exceptions, without consideration of the change in composition of the
initial and the resulting phases, volumetric changes, autocatalysis effects, the
mutual screening action of the growing crystals, the gradual exhaustion of impuri-l-
ties, the fractioning of the initial phase into mutually isolated regions, etc. (11).
Elementary processes of the inception and growth of crystallization nuclei. The
surface energy along the phase boundary. Basic reference is made to the classical
work of Kossel and Stranski. In the USSR, great attention has been focused on the
surface tension. V. K. Semenchenko and his students work actively on a solution.
The works of Ya.I:Frenktl', =.. Samoylovich, and S. N. Zadumkin, tale latter
through his investigations via the solution of the Thomas-Fermi equation, 'are
attracting considerable interest-;--However, it rniiat-be -n-ted that neither from the
theoretical nor from the experimental side have any substantial break-throughs
been scored in the estimation of the surface tension on the phase boundaries- in
solids. In this respect the recent efforts of A.A. Gorski are to be welcomed.
The most difficult problem in this sector appears to be that of the determination
of the surface energy on the boundary between liquid-solid and solid-solid phases.
Card 2/8

L 18449-63
ACCESSION NR: AT3001892
Elementary crystallization processes. Existing concepts on the elementary pro-
cesses of crystallization are based on D. B. Gibbs' and M. Vollmer's classical con
cepts. Further developments, including those of Kossel and Stranski, developed.
more fully by Stranski and Kaishew, relative to the energy of the bonding of atoms
or ions on the surface of a growing crystal, arc cited. The fluctuation theory and
its experimental verification are set forth. The development of the theorydr dis-
locational spiral growth or dissolution of layers of crystals is traced from its be-
ginning in 1945 at the hand of G. G. Lemleyn. Among the most important results of
this direction of investigation are the quantitative examination of the rate of growth
of a two-dimensional layer on a surface, the estimation of the normal rates of
growth of faces in dislocational, nucleus-free, spiral growth, and the partial elimi-
nation of the contradiction between experimental and theoretical values of super-
saturation required for normal growth. Contrary to the results of the Stranski-
Kaishew theory the author believes that the actual mechanism of growth of crystals
is a result of the presence of an amorphized, mobile, surface layer in the growing
crystal and is comparatively similar to the mechanism of growth of a drop. In
contrast to the growth of a liquid drop, there occurs in the growth of a crystal a
Oartial disordering of the surface layer, which is eliminated as the thickness in-
creases. Here it is not excluded that the formation of two-dimensional nuclei in a
number of cases can occur as a secondary process which does not exert as great a
Card 3/8

L 18449-63
ACCESSION NR: AT300189Z
limiting effect as would appear from the Stranski-Kaishew theory. The author
presented these concepts at the First All-Union Crystallization Conference and
has meanwhile found experimental confirmations therefor. Electroc-r-y-s-t-aallization
(EC). The literature touching on the subject is cited, and it is concluded that the
processes of EC, fundamentally, are described by the same expressions as are
other crystallization processes and that the study of EC processes benefits from
the advances of the general theory of crystallization. Nonstationary crystalliza-
tion processes- Influence of diffusion and heat transfer. The process of crystalli7.
zation is basically regarded to be a nonuniform process, even though in many
cases it may be stationary or nonstationary. The literature adduced pertains to
the consideration of the heat-transfer process during crystallization, which occurs
because of the rejection of the heat of crystallization and, at times, even during .7ri
the proce s s of change of composition by diffusion. (111) . P. D. Dankov' s principle
of dimensional and orientational correspondence. This principle (ZhFKh, v. ZO,
1946, 853) demonstrates convini-ingly that the effect of insoluble ..impurities and
stranger base layers can be understood on the basis of the conceptions:of;the:,
mechanism of spontaneous nucleation and the 'statistical-kinetic character of their
growth. The development of this thought, including the formation of WidmanstUtten,
structures, is traced through the literature. Topochernical oxidation and reduct:=.~'
processes are also characterized by the presence of a crystallographic affillity
Card 4/9

L 18449-63
ACCESSION NR: AT300189Z
along the phase boundary. The impact of the Dankov principle and theory on the
understanding of these processes is traced. (IV). The effect of elastic deforma-
tion and pressure on the crystallization process: Primacy in this field is attri-
buted to P. D. Dankov also. The complex history of this particular sector is de-
veloped. Attention is directed to recent works, in connection with the problem of
martensite transformation, on the consideration of the elastic energy during the
appearance of crystals of a new phase and the determination of the change of
thermodynamic potential related thereto. (V). Crystallization processes in multi-
component systems. The literature pertaining to the investigation of processes in
which a new phase of a different composition than the initial one appears is sur-
veyed. In this sector it appears that no more than a statement of the problems of,
the theory of crystallization of solid solutions (mixed crystals) and of the crystalli-
zation of multicomponent systems is at hand. (VI). The theory of the formation of
metastable phases. The development of this theory and that of the boundaries of i
metastability is traced. The results of the quantitative examination of the problem
of the causes and conditions of the formation of metastable phases have permitted
the solution of a number of important scientific and practical problems and, in
-particular, a study of the conditions that govern the existence of metastable phase
diagrams and the factors that determine the thermodynamic and kinetic conditions
of the formation of metastable phases and, lastly, an examination, from these
Card 5/8

L 18449-63
ACCESSION NR: AT3001892
__--points of view, of the phenomenon of " ecov. ry"' that is, the appearance of meta -
-stable phases during dispersion hardeninjZ. Among the important problems in
e- cl
this sector cited is the problem of th auses of the change in composition of the
precipitating phases during anneal of quench-hardened steel, the isothermal aus-
tenite transformation, and other experimental facts concerning the changes in
composition of carbide during the anneal of quenched special and carbon steels.
-!The- theory of _a~e ticja~d eutectoid crystallization- Special attention is focused on
the formation of a shielding layer of initial phase which affects the process of
diffusion of the crystalline matter of the new phase. In many instances, the exist-
ence of such a shielding layer appears to be a limiting factor for the mechanism
and kinetics of the process. The literature on the effect of inclusions on the pro-
cess of crystallization or phase trans formation, such as that of graphite in steel
and of sulfides and others that affect the process of transformation of supercooled,
austenite, is mentioned. Effect of stresses on the processes of crystallization:
Autocatalytic processes. The literature on the autocatalytic processes, in which
the precipitation of a new phase along certain crystallographic planes and directions
produces stresses which, in return, stimulate an acceleration of the precipitation
,Zlong the same directions, is briefly surveyed. Conclusions: The author is not
certain whether the development of the science of crystallization in recent years
has brought forth more answers to existing problems or more new problelms that
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L 18449-63
ACCESSION NR: AT3001892
call for answers. Among the most impirtant problems of the moment are- (1) The
surface energy along the phase boundaries between solid and liquid, solid and solid,
and liquid and liquid. (2) The effect -of-the structure of the liquid and the initial
phase on the rate of inception and growth of nuclei of the new phase. (3) 7he
appearance of microscopic and macroscopic defects in the process of crystalliza-
tion; the effect of defects on the progress of the crystallization. (4) A synthesis
of the phenomenological, molecular-kinetic, and dislocational theories into a .
unitary theory of crystallization. (5) The elaboration and application of the methods
of thermodynamics and the statistics of -irreversible processes to problems of the.
formation and growth of new-phase nuclei.
(6) The development of a phenomeno-
logical and mole cula r-kine tic theory of crystallization in two- and multi-compon-'
ent systems. Improved utilization of phase diagrams in the solution of problems
of the mechanism and kinetics of the process of crystallization. Development and
application of the method of ph~sico-chemical analysis (study of the phase diagram)
in the investigation of the rates of crystallization and transformation. (7) Further
development of the theory of the kinetics of crystallization processes with due
account of the dimensionality of the growing crystals of the new phase, changes in
composition, and the temperature dependence of the crystallization parameters,
with due consideration of the presence of a c rys tallization- shielding layer.
(8) The theoretical development of specific processes of crystallization, phase
Card 7/8

L 18449-63
ACCESSION NR: AT3001892
transformations, and, especially, crystallizati-on processes in films and the for-
mation of single crystals. (9) A theoretical examination of real nonstationary ,
crystallization processes, determined by the conditions of heat rejection and heat
and mass transfer, in connection with the general problem of crystallization.
(10) A theoretical investigation and development of methods for the growing of
single crystals with prescribed densities of defects and with prescribed (controlled)
filling of energy levels of various impurities. (11) Theoretical development of ne%v
methods for the growing of single crystals and specific methods of recrystallizati6n,
includi-no such methods as floating-zone melting.. the Chokhral'skiy method, et al..
e=t :2f, a C"d I= I 2---d 7n:-~c es S e S cf rrvs -
anc and excperimenzal amd theoretical de,.~eiopmeat of
crystallization problems which accompany the electrically produced break-up of
crystals, etc. The cooperation of a broader circle of physicists and physical
mathematicians, as well as the use of electronic computers, 'is invited. OLg. art.
,has: 19 figures.
ASSOCIATION- none
SUBMITTED: 00 DATE ACQ: 16Apr63 ENCL: 00
SUB CODE: CH, PH, MA. NOREFSOV: 116 OTHER: 046
Card 9/ 8

L 18831-63 EWp(q)/EWT(q)/BDS AFFTOIASD JW1JD
:ACCESSION NR: AT3001899 S/291216,/000/000/008Z/6106
/I AUTHOR:,, Sirota, N.--
TITLE: The effect of impurities on the process of crystallizatio effect of
inoculants, influence of their crystallochemical affinity)
SOURCE: Kris tallizatsiya I fazov*e perekhody'~ Minsk, Izd-vo AN BSSR,
196?, 82-106
TOPIC TAGS: crystal, crystallization, crystallography, phase, transformation,
change, inoculation, inoculant, Impurity, addition, affinity, crystallochemical,
crystallographic
ABSTRACT: 'this paper examines the characteristics of the action of inoculants
and impu.-itiesf~pf various types on the crystallization process and the mechanism
of their effect from the point of view of the theory of spontaneous crystallization
(SC). The examination poses these problems in their most general form, assum-
i ing that the discussions and conclusions may be applied to specific instances of
1 crystallization from a gaseous phase and from a fusion, and, in the latter case,
either from the fusion itself or through recrystallization in the solid state. Four
general classes of inoculant impurities are distinguished: (1) Inoculants that act
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18831-63
_A,
!ACCESSION NRt; -AT3001899
lon the proce a a of crystallization as solid extraneous -inclusion's .(usually In a hight
!dispersed state); (Z) inoculants that go into solution and which affect the crystallij
zation process primarily by altering the composition of the phase interfaces and a
the xegions of the ~parejit. phase with an increase in the spectfic free energy (SFE);
1(3) various external effects tha 't create nonuniformities 'in-the structure, the phyal
cal-and chemical state of the substance, and, consequently, nonuniformities of the
imagnitude of the SFE and of the chemical composition in various regions of the
parent phase; (4) solfinoculation. The present study is limited to an analysis of
the effect of inoculant, impurities of the first class (inclusions),! the second class
!(surface-active substances that go into solution), and the4ou rth claso .(selfinocula-
tion). A further subdivipion of these classes to specified andiabulated. Two im-
portant subjects of crystallization: theory are entertained, namely, the SC of new-
phase nuclei on impurities and the role of the dimensional and -brientational corre-
spondence between the lattices of the inclusions and those of the, germinating new
phase in the processes of germination and growth of its nuclei. These problems
;are examined in two sections: (1) The mechanism of the effect of the inclusions ant-
the c rys tallization proce s s. - The effects of chemically noninte racting and crystal-
WrfAicakldponaffine inclusions on the crystallization process are attributed to
0
owin actors: The inclusions can offer ready surfaces, at the boundary of
:which germination of new-phase nuclei is facilitated. The impurity surfaces can
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! L 18831-63
'ACCESSION NR: AT3001899
offe r agermination opportunity through their surface nonuniformities and presenc
of fissures. The dispersivity of the inclusions on nucleus formations and the
rowth of new-phase crystal germs can be great because of their disturbing effect
g
I on the layer of surrounding phase and differences in surface energy. Adso tional
rp
i0
phenomena between impurity and parent phase can also aid the crystallizat n r0_1
1 cess. Each of these factors is analyzed theoretically. The reasonings ad c d inr
du
dicate convincingly that, as a rule, inclusions of various degree of dispers it can
iv
affect the germina'tion rate of new-phase centers within a broad range of supercool]-
ling and time. The nucleus -germination process on inclusions can have a purely
fluctuational character; here, as a rule, the work of nucleus germination on the
impurities will be intermediate between the work of the formation of 3-dimensionai.
and 2-dimensional nuclei. Further quantitative analysis- of these qualitative reason-
ings is desirable. (2) The mechanism of the effect of chemically noninteracting,
but crystallographically affine, impurities on the crystallization process. This I - -
section deals with the existence of inoculants which have a crystallographic affinity
!with the new germinating new phase and on which the new phase can form directly
I as well as on an interlaye r and can continue to grow in accordance with the crys-
i tallography of the interlayer. Such inoculants constitute ready crystallization
,ecenters. The probability of germination of two-dimensional new-phase nuclei on
'the faces of these inclusions is approximately qqual to the probability of the
I
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ACCESSION NR; AT3001899
0
1 germination of two-dimensional nuclei on the faces of three-dimensional new-phas
nuclei.'Various special problems in this process are analyzed. Among the im-
portant problems of the effects of soluble impurities we note the problems of their
effect on the form of growing and dissolving crystals and on the rate of their
;growth and dissolution. These problems are linked directly with the entire com.-
plex of problems of the adsorption of impurities on various crystal faces and with
the problem of the effect of impurities on the structure of the parent phase of a
solid or liquid solution or fusion. This second portion of the present study will be
published in the second volume of "Kristallizatsiya i fazovyye perekhody (Crystal.
lization and phase transformations)." Orig. art. has 9 figures and 2 tables.
ASSOCIATION: 00
SUBMITTED: 00 DATE ACQ: 16Apr63 ENCLAS: 00
ISUB CODE: CH, PH, MA. NO REF SOV: 040 OTHER: 002
Cafrd 4/4

L 12752-63 'AFFTGASD R~1/JD/11RAY
ACCESSION NR: AT3001944 S/Z91Z/62/000/000/0420/0424
AUTHORS: Sirota, r4.N., Varikash, V.M.
TITLE: On the rate of growth of crystals of triglycinsulfate in the, vicinity of the
Curie temperature.
SOURCE: Kris tallizatsiya i fazovyye perekhody. Minsk, Izd-vo AN BSSR,
1962, 420-424
TOPIC TAGS: crystal, crystallization, crystallography,, triglycinsulfate, Curie,
temperature, seignette, electricity, a eignette -electric, phase, transition, change,
supe rsatu ration, supercooling
ABSTRACT: The paper describes experimentation which revealed a significant
anomaly of the rate of growth on faces (110)'and (001) of crystals of t riglyc in sulfate
(TGS) in the vicinity of the Curie temperature (T). The process reported was
studied as a functibn of the supercooling of solutions, the saturation T of which lies
within the 30-600C interval. The Curie T, that is, the T of seignette -electrical
phase transformation of TGS lies in the 47-500 interval. The TGS was synthesized
from glycol and concentrated HZS04. The substance obtained was recrystallized 4
times in distilled,water. The test equipment used was'similar to that employed by
G. Bliznakov and Ye. Kirkova (Zeitschr. f. Phys. Chernie, no. 3/4, 1957). The eq4ip-----
ment consists basically of a saturator in which the solution was. saturated-thr6ugh
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ACCESSION NR: AT3001944
the dissolution of small crystals placed on a glass filter and was then brofight into
another vessel in Which clorculating cold water supersaturated the solution. Crys-
tallization began on a sm.all crystal, 3-4 mm in size, with clearly defined faces,
-which had been fastened on-a holder in such a way that the test face was at the level
of a microscope sighting t;abe, parallel to the visual ray, and was oriented suitably
relative to the flow lines of the supersaturated solution (usually parallel thereto).
Micrometric readings were made eyery 4-5 hrs at low degrees of supersaturation
(SS))every 45--~60 min at elevated degrees of SS. The rate of change of translation
(RC) of the face (001) as a function of T for various degrees of supercooling grows
up to T close to the Curie T. In the vicinity of that T (in -the 35-450 range) the RC
decreases. Above 450 it grows again sharply. The RC of the (110) face behaves
differently: It increases with increasing T up to 46-479, drops slightly in the 47-
0 a
50 interval, and then grows again. With more 'elevated degrees of supercooling
the RC anomaly near the Curie T decreases and vanishes completely for a super-
cooling of 1.40C. Orig. art. has 4 figs.
ASSOCIATION: . none
SUBMITTED: 00 DATE ACQ: 16Apr63 ENCL: 00
SUB.CODE: CH, PH, MA NO REF S*OV: OOZ OTHER: 004
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L 119757-63 EP1P(q)/_1-otT(m)/EY1P(B)/BDS ArFTC/ASD Rl.,/j D/' ~~,Y
ACCESSION NR: AT3001947 S/291Z/6z/000/000/0439/0445-
AUTHORS: Sirota. N. N.,* Varikash,'V.M.
/1 91 -
TITLE: Changes in heat conductivity and linear expansion coefficient in the vicinity
of the Curie temperature 1n'tr'qz1VCL*n'iulfate -
SOURCE: Kris tallizatsiya fazovyye perekhody. Minsk, Izd-vo AN BSSR,
1962, 439-445 _V
TOPIC TAGS:- crystal, crystallization, crystallography, temperature, point, m
Curie; seignette, seignette -electrical, transformati;on, heat conductivity, lineair
expansion coefficient, expansion, linear, triglycinsulfate...
ABSTRACT: The paper describes an experimental investigation of the change in
heat conductivity (HC) and the linear expansion coefficient (LEC) of trialycinsulfate
(TGS) along the axes [100 [010] , and [001 ] between ZO and 60'C, a tem-
peratuxe (T) range that comprises the seignette-eleCtrical transformation segment
-of TGS (47-500C). . Measurements of the HC were performed 'as follows: Two half-
crystals were fitted together closely along the (001).plane, and a heater wire and a
thermocouple were clamped between them at a distance of 6-7 mm from one
another. HC along the 1100 ] a.,ds was determined by orienting the heater wire
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ACCESSION NR: AT3001947
and the thermocouple along the axis (0101 HC along the axis [010] was
measured by orienting the two wires along the axis [100 ) . A heat pulse was im-
parted by r-nergizing the heater wire, and the change in T, the time required to at-
tain the T maximum, and the maximum-T value were measured. The HC curve vs.
T in the direction [ 100 1 shows a nearly linear decrease up to the Curie point;
above the Curie T,, the -decrease continues linearly, but at a smaller slope. The
HC-vs.-T curve in the 'direction [ 0 10) is nearly linear from 200C to the Curie
point, rises to a hump at 50-510, -and then continues with the same slope-as the
initial segment. These anomalies are attributed to a change in the character of the
thermal motions of the ions. The measurements of the LEG were performed with
a quartz dilatometer. T steps of 5 to 60 were reduced to 0.4-0.50 in the vicinity of
the Curie T. Hold: 20-30 min. Specimens were cut from a- TGS single crystal in
the form of parallelepipeda 3x3 mrn in cross section, 18-25 m'm long. Specimens
cut along the axes [ 1001 and [0 10 1 exhibit a nonlin rAecrease- in-lengtIr-up.fC__ I
the Curie point and a linear in6reas-e' beyond it. The exact opposite occurs with
specimens cut along the ayis [001 The results obtained concur with those of
the X-ray tests by Z. I. Y;zhkiva, et al. (Kristallografiya, y. i, no. 1, 1956).
Wherever differences are noted, such as those in the character of the change of the
LEG along the ( 0 10 1 axis and some of the differences in the absolute values of
the LEG, the present testing method is regarded to be more accurate than the
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X-ray method. The tensor surfaces of the LEG at 300, 400 and 500C are drawn
both in cross section and inisometric representation. The isometric images of the
tensor surfaces below and above the Curie point show that at the Curie point there
is not only a rotation of the surfaces, but also a deformation, as a result of which
increased internal stresses arise in the TOS crystal. Orig. art. has 6 figs.
ASSOCIATION: none
SUBMITTED: 00 DATE ACQ: l6Apr63 ENCL: 00
SUB CODE: CH, PH, MA NO REF SOV: 004 OTHER: 002
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S/250/62/006/p 10/00 1/006
A006/A 10 1
AUTHORS: Sirota..-S. N,, Koren', 11. N.
TITLE-:; Investigating kinetics of ZnS film formation during reactive dif-
fusion of sulfur into zinc
PEMODICAL: Akademiya nauk BSSR. Doklady. v. 6, no. 10, 1962, 626 -_628
TaT: The authors studied the rate of ZnS film formation on various faces
of a Zn single crystal during the interaction with sulfur vapors, as a function
of time and temperature. Kinetics of ZnS film formation on liquid metal sur-
faces was also invest 'igated. Zn single crystals were grown by zonal recr-Istalli-
zation, Zn of ()9.99% purity wits used as initial material. Diffusion annealing
was performed in a glass ampoule evacuated to 5 - 10-5 mm Hg. The thickness of
the films, as a function of time at temperatures ranging from 320 - 450oC was
determined. The results obtained confirm the theory that the reactive diffusion
obeys the parabolic law. The coefficient of diffusion as a function of tempera-
ture obeys the exponential law. To determine the process of ZnS film formation
on Zn the pre-exponential factor (D = 1.2 - 10 2 cm2/sec) and activation energy
Card 112

Investigating kinetics ot'...
3125016 2/006/03101001 /GC6
A006/A101
N = 32 T 3 kcal/mole) were graphically found. The coefficient of reactive dif-
fusion as a function of temperature for the process investigated can then be ex-
pressed by equation - 32000 � 3000
I -2 RT 2/sec.
D = '.2 - 20 cm
The-process of ZnS film fonaation on molten netal surfaces at 430 - 6000C also
obeys the parabolic law. Values of logarithms of diffusion coefficients lie well
on the straight line ln D(I/T), obtained for the reactive diffusion in Zn single-
crystals. There are 2 figures.
ASSOCIATION: Otdel fiziki tverdogo tela i poluprovodnikov, AN BSSR (Division of
Physics of Solids and Semiconductors, AS BSSR)
SUBMITTED: June 19, 1962
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25850
S/020/61/139/004/010/025
2 '-1 B100209
AUThORS: Sirotal N. N., Academician AS BSSR, and Olekhnovich, N. 14.
TITLE: Density distribution of 3d-shell electrons causing ferro-
.magnetism in nickel, cobalt, and iron
PERIODICAL: Akademiya n4uk SSSR. Doklady, v. 139, no. 4, 1961, 844-846
TEXT: Using the known form factors of neutron scattering the authors
studied the distribution of those electrons in nickel, cobalt, and iron
causing ferromagnetism. The amplitude P of neutron scattering is determined
by the rela tion P - e 2rf S/mo2, where f denotes the unit form factor of neutron
scattering, and 5 the effective quantum number. S is determined from the
maEnetic moment of the element under examination: S - F/2. The followin
1 0!
magnetic moments were used in this calculation. 2.22 for Fe; 1,74 for C ,
0.60 for Ni. The fS values as calculated after data taken from R. Nathans
et al (Phys. Chem. Solids, 10, 138 (1959); Phys. Rev. Letters, 2, 254
(1959~) are shown in Fig. I 77~ iron (curve 1), nickel (curve 2)_1 and for
obalt (curve 3). By means of a three-dimensional Fourier expansion or by
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Density distribution of 3d-shell ... B1041B209
an approximation it is possible to calculate electron density at any point
of a unit cell as well as the radial distribution of the 3d-electrons which
cause ferromagnetism. Fig. 2 illustrates the electron density (Fig. 2a)
and the radial density of 3d-electrons in the three metals studied, The
graphs show that the electron density in all three metals attains a maximum
near the center of the nucleus. On the other hand, the radial electron
densities attain maxima at 0.44 ~ for nickel, at 0.40 1 for iron, and at
O~39 R for cobalt (Fig. 2b). Further discussions on the basis of experi-
mental data about the am litudes of atcmic scattering (G. W. Brindley:
Phil, Mag., 211 778 (19363) lead to the conclusion that the "magnetic"
electrons do not exert any essential influence upon electron density between
the nickel atoms. There are 4 figures and 4 references: I Soviet-bloc and
3 non-Soviet-bloc.
ASSOCIATION: Otdel fiziki tverdogo tela i poluprovodnikov Akademii nauk
BSSR (Division of the Physics of Solids and Semiconductors,
Academy of Sciences BSSR)
SUBMITTED: rMay 8, 1961
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Kinetics of the forr,~ation of ftirits of 24nc salenide on zinc single
crystals in thk~ process of reac-tive di-fl'usion. Dokl. Ali BssR 6 no.
1-1Z760-761 D \~~2. (IMA 16-9)
1. Otdol fizdki- tIverdQgo tela 4-1. polupravoduIkov AINI EISSR.

5102010'21'14210061'0091019
71 1/ o/,
AUTHOP: Sirota. N. N. , Academician AS BSSR
TITLZ; Distribution of the electron density determinable by
eyperiment in crystals and the diamagnetic susceptibility
142, no. 6., 1962, 1278-1281
1--ii-ODICAL Akademiya nauk SSSR. Doklady, v.
T7-i= dia.:ia-netic susceptibility of simple crystals and Semiconductors
U
is at,termined by X-ray studies from the intensity distribution of
o c a t 11 ! -, - ed' X, - : - : i y s, Tl,-,p electron density in the lattice of a monatomIc
cryqt,~j.l can be 5p!it into two components: ~) - k,1+ Q2' Most of the
electrons chiefly thost. near the nucleus have a Gaussian distribution,
The distribution Q 2 of the remainder must be determined by experiment.
Consequently, 'the diamagnetic susceptibility is made up of two parts:
A + Y . The indices I and 2 refer to the electrons with Gaussian
1 '2
distribution and the remainder, respectively, as above. Here,
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