SCIENTIFIC ABSTRACT SHEYNKMAN, A.K. - SHEYNKMAN, M.K.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001549330011-4
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 9, 2001
• Sequence Number: 11
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

KOST, A. N.; SHEYNYJ4AN, A. K.; KAZAKNOVA, N. F.
Interaction of acetylpyridinium salts with dial]kyl anilines.
Zhur. ob. Khim. 34 no.6:2044-2049 Je 164. (MIRA 17:7)
1. Donetskoye otdeleniye Instituta organicheskoy khimii AN UKrSSR
i 14oskovskiy gosudarstvennyy universitet imeni Lomonosova.

-Siff"'NMI.N. A.K.,
, A.U.; KOI,OMC)YTSFV, L.P.; KOST, A,N,
'4--taterriary jaltq of 4-'Z-dialkylamlnophenyl pyridin-'um. Vest.
Mosk. un. Sar. 2; Khitri. 19 no.6;74-82 N-D t64. (MTRA 1813)
-M4j 'versite-ta.
,, Kaf,~,dra Drgan-"cheskoy kM ~ Mosk::,,.rskog,) u-i-

CIIERKASISKIY, Ye.S.; SEIPICHNIK, NJI.; A.K.
Fungicidal properties of some I-substituted pyridires.
Dokl. AN SSSR 156 110. 5~1197-1200 Je '64. ('M IRA 17 ~ 6)
1. Gla-,,n.-rj botanicheskiy sad All SSSR I Donetskoye otclelen-iya
Trstitutua organic he sko,.r khimii AN S'SSR. Predstwrlen(-, akademikom
N.V.TS-itsinym.

A.F.; ROM~Bll,'T?G, AX,
cnders~ -,Icn of 1-ao--'Ir)~col -nic sed ts ,r-' tic deh. es.
c-ma al yd
D 164
Z~Kur. ob. kh--m. 34 ro.12-.~,'.046-4054 (NIPA 18:1)
1. Mcakovsk-ly gc-sudarstvenny,, ur-lvers-Itelu imani 'M.V. Lonionosova.

'Ye.S.; K~~'LOISYTISEV, I,R.; SEYNEMAN, A.Y.; KU-CIEYEVA,
Antiviral activity of quaternary salts of 4-n-d-ialkylaininophenyi-
pyridines and chlorine-copper complexes of' p~rridine bases of the
ca-bonaceous tar. DokI. AN SSSR 161 no.5i1208-1211 Av 165. (ILTR-'. 18:5)
1, -'~ubmdtted AlliTust 27, lQo"'.

KOLOMOY,rm) L.R.; GEONYA, N.I. [Ileonia, N.H.]; STRANGOVSKAYA, N.V.
[Stranhovs1ka, N.V.]; SHEYNKMAN, A.K.
Effect of quaternary salts of 4(n-dialkylaminophenyl)-pyridines
on dysentery bacteriophage. Mikrobiol. zhur. 27 no.2:56-60 165.
(MIRA 18:5)
1. Donetskiy meditsinskiy institut.

SHEYNMAN, A.K.~ KGSTI A,N,
1-A:.-k-yi-2,3-d-ibyd!-r,'Lr.dr,les. Vetod. poluch. khim. reak. i prepar.
no.lD5-7 164.
1-Alkyl---5-N(41-pyridyl-'/-2,3.,d.-~byd=o!ndc!eB. lbid.~8-11
(MM M12)
1. Donetsk~y filial Vsesoyuznogo naucbnc-issiedovatellskogo
inatitut&,khimicheskikh reakt_ivov i osobo chstykh khimicheskikh
veshchestv i Moskovskiy gosudarstvennyy univemitet imeni M.V.
Lomonosova. Submitted May 1964.

KOST, A.N.; SHE?~NW,-AK.; PRILEFSTUYAr AoN.
1-Alkyl-6-(4'-pyri.dyl)-112,3v4-te'l,rahyd-oqtLinolines. Metcd.
poluch. khim. reak. i prepar. no.11:12-15 '64. (MMA 18j12)
1. Donetskiy filial Vaesoyuznogo-nA,ichno-issled-ov&tel-iskogo
instituta kh'LRdcheskikh reaktivov i osobo chistykh khimicheskikh
veshchestv i Moskovskogo goaudarstvennogo universiteta M.V.
Lomonosova. Submitted May 3.964.

~-SHETNKMA.N, G. , inzhnner.
e_ 1111~
Using a colorimeter to determine the color of flour and baked
bread. Muk.-alev.prom. 23 no.3:21 Mr '57. (MLRA 10:5)
1. Laboratoriya Moskovskogo treat& Glavnogo upravlaniya
khlabnpakarnoy proirVehlennosti RSVSR.
(Flour--Analysis)

57 ( 3 ) SOV/79-29-4-47/77
AU THORS: Levchenko, Ye. S., Sheynkman, I. E,
TITLE: Esters of 11-arylthiocarbamide-NI-phosphoric Acids (Efiry
N-ariltiokarbamid-1,11-fosfornykh kislot)
PERIODICAL: Zhurnal obshchey khimii, 1959, Vol 29, Nr 4, pp 1249-1254
(USSR)
ABSTRACT: As was shown by Levchenko and ,Coworkers . (Ref 1), the esters
of isothiocyanate phosphoric acid react with amines, and
particularly with aniline, in such a way as to form thiourea
derivatives.
(RO)2P(O)NCS + C6H 5NH2 (RO) 2P(O)NHCSNHC6H5'
One of these compounds, the diethyl ester of N-phenylthio-
carbamide-NI-phosphoric acid, (C 2H 50)2P (O)NHCS"HC6H52 possesses
insecticide and anti-tuberculous propertiesq It was therefore
of interest to prepare esters of N-arylthiocarbamide-Nl-
phosphoric acid with various substituents in the aromatic
nucleus and to examine their physiological properties. The di-
ethyl ester of isothiocyanate phosphoric acid (Ref 1) was
Card 1/3 caused to react with p- and o-toluidine, p- and o-anisirdine,:

SOV/79-29-4-47/77
Esters of N-.-arylthiocarbamide-lil--z)hosphoric Acids
p-phenetidine, o-, m-, and p-chloro and-ne,
p-fluorc, aniline, p-aminoph;nylsulfamide, p-sodiumam-inosalicylate,
and phenylhydrazine. The diethyl eaters of N-arylthi-ocarbamide-
NI-phosphoric acids obtained are colorless compounds with
acid properties. They are slightly soluble in water, benzene,
ether, and CC1 4) and can be recrystall-,zed from alcohol and
acetorie. The diethyl- and diphenyl ester of isotlhio~yanate
phosphoric acid and the diphenyl ester of isothiocyanate thio-
phosphoric acid form similar thiourea derivatives with o-amino-
thiophen.Dl. These compounds are, however, unstable and cycL`ze
as soon as they are left undisturbed for some time, while benzo-
thiazole derivatives and H'S form (Scheme 2). N-(benzothiazolyl-
2
2)-.diphenyl-diisobu't-,ylphoslt'bamate and --diphenylthiopliosphamate
are colorless crystalline compounds. N-methyl-o-amirotY-i'ophenol
reacts as easily with the esters if isothiocyanate th-L*oph,,Os--
phoric acid and results, via the thiourea derivative., In the
derivatives of 3-methylbenzothiazolidene-2. The corresponding
diphenyl ester of the same acid results in N-O-me4-hz~ibenzc-
thi-azolidene-2)-diphenylthiophosphama'-e according Uo scheme 3.
Card 2/3 a-aminopyridine and N-methylbenzothiazolonimi-r-e result, by

Esters of N-aryl'hiocarbamide-NI-phosphoric Acids
U
SOV/79-29-4-,17/77
reaction with the diethyl ester of isothiocyanate phosphoric
acid, in the corresponding thiourea derivatives (Scheme 4)-
The esters of arylthiocarbamide phosphoric acids proved to be
weakly insecticide and anti-tubercalous agents, with the ex-
ception of the diethyl ester of N-(p-chlorophenyl)-thiocarbandde-
NO-phosphoric acid and the diethyl ester of N-phenylthio-
carbamide-NI-phosphoric acid. There are 1 table and 3 ref-
erences, 1 of which is Soviet.
ASSOCIATION: Institut organicheskoy khimii Akademii nauk Ukrainskoy SSE
(Institute of Organic Chemistry of the.Academy of Sciences
Ukrainskaya SSR)
SUBMITTED: January 6, 1958
Card 3/3

50)
AUTHORS: Levchenko, Ye. S., Sheynkman, I. E. , BOV/79-29-5-14/75
Kirsanov, A. V.
TITLE-. Preparation -)f Phosphorus-Diiodide and -Triiodide (Polucheniye
dvukhyodistogo i trekhyodistogo fosfora)
PERIODICAL: Zhurnal obshchey khimii, 1959, Vol 29, Nr 5, pp 1474-1477 (USSR)
ABSTRACT: In the work under review the authors devised a harmless and - as
to preparation - convenient method for the production of phosphorus
diiodide and at the same time a method for the pr9duction and
purification of phosphorus triiodide vithout use of white phosphorus
and carbon disulfide. After numerous experiments it was found that
phosphorus diiodide and phosphorus triiodide can be obtained in
absolutely pure form iirectly from iodine and red phosphorus witt
subsequent crystallization from suitable solvents. The reaction
may be carried ou-b by fusing iodine and phosphorus ortybWlingof iodine
and pboqixom in solvents applicable to crystallization. Batyl iodide
and bromide, dichloro ethane, ethyl iodide and other alkyl- and
alkene halogens can be used for the crystallization of phosphorus
diiodide. Chloro benzene is the most suitable one. The phosphorus
iodide obtained represents rather large, orange, longish lamina with
Card 1/2 a melting point of 126-1'270. Higher quantities of this preparation

Preparation of Phosphorus-D:Liodide and -Triiodide SOV/79-29-5-14/75
can be prepared without difficulties. Carbon tetrachloride,
chloroform, butyl iodide can be used for the recrystallization of
phosphorus triiodide, but most suitable is dichlo-ro-ethane.
Phosphorus triiodide is obtained in the form of rather large brillial*
dark-red crystals with a melting point of 60-610. There are
5 references, 2 of which are Soviet.
ASSOCIATION: Institut organicheskoy khimii Akademii nauk Ukrainskoy SSR
(Institute of Organic Chemistry of the Academy of Sciences,
Ukrainian SSRX
SUIRAITTED: may 6, 1958
Card 2/2

LIWCEM 0, Ye.S.; SHEYNMN, I.B.; KIRSANOV, A.V.
Phenylamides of H-dianilidophosphinylareniminosulfonic acids.
Zhur.ob.khim. 30 no.6:1941-1946 Je 160.
(MIR& 13: 6)
1. Institut organicheskoy khizii Akademii nauk Ukrainskoy SSR.
(Amides) (Sulfonic acids)

LEVCHENKO, Ye.S.; SHEYIMIAN, I.E.; KIRSANOV, A.V.
N-cUchlorophosphinylalkaniminosulfonic acid chlorides. Zhur.
ob.khim. 33 no.10:3315-3323 0 163. (KMA 10:11)
1. Institut orgunicheskoy khtmii AU UkrSSR,

,;','7, Y J,~ !AN, L. 3.
I'" L ,
36892. TM-1.11110-ViK 111, '4.'i. I J [ K,-'~N,'AANY L.'. i CHAXIJAP L.A. Mogtor,~nayA
kiii-onsk.,itya v serdech bolInykh s bolyami v oblasti serdtsai
Trudy Med. in-ta (Izhev. 6,05. t. Iri-t), t. IX, 1949, c. 228-32
SO: betopis' Ahurtial Nykh Staty, Vol, 50, %fosk-,ra, 1949

SHEYNIMANY I'l. K.
USSR/Physics - Photoconductivity
11 Oct 52
"Photoresistances of CdS Monocrystals and Their Photoactivation," V. Ye. lashkarev,
Acting Mem, Acad Sci Ukrainian SSR, V. S. Medvedev, A. I. Skopenko, G. A. Fedorus,
M. 1. Sheynkman, Inst of Phys, Acad Sci USSR
"Dok Ak Nauk SSSRII Vol 86, No 5, pp 905-9D7
At 7th Conference of Semiconductors in 1950 (cf. lashkarev et al., "Iz AN SSSR, Ser Fiz"
16,81 (1952) photoactivity of CdS monocrystals was reported activated by light. Show that
photoresistance of CdS is only one exhibiting, in addition to high sensitivity, practically
horizontal spectral characterisites within band 0.4 to 0.21u. Received 5 Aug 52.
PA 245T94

in

c0-,

o 0,
s
B

CO
.

1
9

1
4
-

C- 0
3
c
71 i z ra p s I

i
va
c

Ac hl
h5
0

n 14
~c c

c cc 00
-01
-
N
0-

0,
c
;sig
,
0
C.
0 va ii
c
.
0

Od .0 0.

:u

0 96 E m 0
40
fk me; p a

Distr. hJV_!jA4,,,-
of the photosensitivity of cadmium suffiJ7.1130n0-
the region of their aatuf ~aryR5E_ V__r__
-L&;hkar ev I E. A. Satlov, A Felczus. and M
_krcv. Ft~_ 7hu, 2. 2* -The spectral
-an I 1, -57.
dcpendellcr -, Lhz he phjtc~urTxat output,
the ;C,Aulllit~ ~d the- iife, _1111C Oi the Ph'LO&M-rriers. and the
J J C ~S :U~nc~-Ystab
it -Is 4.,jad tha: in t'ac rl~;c itum 4(W to
-W A
5
2 the mrmf al.~Wtty was ind t of the wave
length .,( the exct0al IiOt~ i be r= COCIT. in tile
range t4 natural absorptwn does not exceed 20,70. The
5imetrai function n1f the lifetime r4(-,%) of the photocarriers
upon transition from the Short-Wave PLUI Of the spectrun] to
tile max. nf the photocurrtut is difictrat for the diffinew
,amples: it mo incre-ase. remain const .. or decrease. and in
,ttcr ease reaches its uziq. at thc =x_ of the photoclu
rent. Tbisiiadsitgexp-?=--ti,=L-itbatT*06)isiccmcn.func-.-
tion. The phatocurrent output. detd. accardint to mveral
methodi, is similar in the shape of its cur%re- to the sha;ie of
tile' spectral function of the photocurmnt, and this k why
the photo-eusitivity dftxesses in the range of uaEtzral ab-
=rption. An ciptanation is furnished-by the hypothesis of
nonpiwtoactive exciton annihilation U-tfie crystal surIace
when abscirbiog the strongly Asorb4tight. The photoct-
ficiency 0 &~ the max: Qf -the photoclzr~;,--!s 0.4i but in the
short 'Nave4ength viittin. P wM dri4l ,Uk 0.02. It' ,4 shown,
that if such (Unctic" are taeasxtra4 by aid of' phot, - t
1'ube-(CX
tqu;d*t1o3 as r_eCQ_ n- amudcd b . -.1
-US4,
roacous 23 rv

/v/,~ v JJ /-,-.
Slh[Aov. V.Te/./[I/ABhk,ar'
!, -,~V, V.13.]; FHDORUS, G.A. [Fedorus, H.A.];
SHMMUMN, M.K.
Diffusion of photocarriere In CdS single crystals. Ukr. fiz. zhir.
2 no.4074-375 O-D 157. (MM 11:3)
1. Inatitut fiziki AN URSR.
(Cadmium sulfide--Electric Properties) (Photoconductivity)

20-114-46~18/54
AUTHORS: Lashkarev, V. Ye., Member of the Academy of Sciences of the
Ukrainian SSR, Sallkov, Ye. A., Fedorus, G. A., Sheynkman, M.K.
TITLEt The Shape of the Spectral Distribution of Photoconductance
by Single Crystals of CdS (0 forms spektrallnogo raspredeleniya
fotoprovodimosti monokristallov CdS)
PERIODICALs Doklady Akademii Nauk SSSR,1957,vol-114,Nr 6,pp.1203-1205(USSR)
ABSTRACTs The experiments were carried out with monocrystals of Cd which
were obtained by a synthesis of Cd vapors and sulfur. The
electrodes were produced by vaporizing of indium in vacuo.
A UM-2 monochromator with a special incandescent lamp (340 Watt)
served as light,source. The spectral characteristic of the
photocurrent was determined at stationary illumination of the
sample. The investigation of the spectral dependence of the
proper time of the photocarrier is also described here. The
authors shortly discuss the measuremsnts of the following
quantitiess momentary proper time 'r of the decrease of the
photocurrent at the moment of the emission of light, the yield
Card 1/3 of the photocurrent a 0, the mobility of the photocarrier.

IASHKAREV, V.Ye. Dashkarlov, MEI; SALIKOV, Ye.A. [Salikov, IE.A.1;
FEDORUS, G.A. [Fedorus, H.A.1; SHEYNKMAN, M.K.
I- - - I ~'. -
Study- of the spectral characteristics of cadmium selenide crystals
[in Ukrainian with summary in English]. Ukr. fiz.*zhur. 3 no.2:
204-215 Mr-AP '58. (MIU l1-.6)
l.Institut fiziki AN URSR.
(Cadmium selenide--Spectra) (Photoelectricit7)

AUTHORS: E.I.Rashba, M.K.Sheynkman SOV/157-2-3-9-3/33
TITLE: Influence o-f-"Su-r--rwa-c"e"T%'Z~'6-tbi-nat ion Upon the Kinetics of
Photoconductivity in Semiconductors (Vliyaniye poverkhnostnoy
rekombinatsii na kinetiku fotoprovodimosti v poluprovodni-
kakh)
PERIODICAL: Zhurnal tekhnicheakoy fiziki, 1956, Vol 28, Hr 9,
PP. 1883 - 1889 (USSR)
ABSTRACT: This is a study of the kinetics of photoconductivity
in a semiconductor under the most simple premises with
.respect to the recombination mechanism intended to present
a clear and illustrative explanation of the influence of
surface recombination upon the course taken by photocurrent
relaxation at different values of the light absorption
factor. The surface recombination is essential even in the
early stages of the photocurrent relaxation processes. In
order to make this influence accessible to measurement the
values To are given at which P-t which is computed according
to formula (3)is about 2/3 of P. . P* denotes the effective
Card 1/3 quantum yield and Po the real quantum yield. This report

Influence of Surface Recombination Upon the Kinetics SOV/57-23-9-3/33
of Photoconductivity in Semiconductors
covers an inves tigation of the spectral disribution of
the stationary photocurrent, of the effective quantum yield
and of the effective life which were recorded by methods
described in publications. It is believed that the spectral
dependence found in connection with the investigation of
the quantum yield has a physical meaning and that it is
not connected with the insufficiently short period during
which the yield was measured. There is every indication
S a!-% acttuaI~T e-That sad'~ areal S-pectra-1 -I e-
zendence nf cuantu=- N--;eld. V-Ye- LasWmrev, Flembei, AcaderY Of
Sciences, Ukr SSR proposed the subject for tliis studY.
V. Yu. Fedor c' henko assisted in the calculations. There
are 9 figures and 14 references, 13 of which are Soviet.
ASSOC IAT ION: Institut fiziki All USSR Kiyev (Institute of Physics /AS UkrSSR,
Kiyev)
SUBMITTED: December 6, 1957
Card 2/3

24(6) ~_-OVI r,7-28-10-7/40
AUTRORI~-. b roude. V. L. , Yeremeriko, V. V Sh (nkman. , 11. 7
TITLE: Investigation of 'he '~*n-~rqi Distribution 0of Photocon-
ductivity of CdS Sft16-C27dA1A at 77 and 20 K (Issledovaniye
spektrallnogo raspreaeivniya fotoprovodimosti mcnckristallov
CdS pri 77 i 20 0K)
PERIODIC! L: Zhurnal tekhnicheskoy fiziki.VOIL 28j Nr 10, pp 2!42-2151 (UFSR)
ABSTR~CT: This is a presentation of the results of -an inveL~t~_gat~on of the
spectral distributicti of ttie photocurrent and of' tne eigentime
- 0
of the uhotocarri- at 77 and 20 K, and of the relation of
these quantitie-- to the coefficients of light absorption for dif-
feren-~ wave lengths. The four functions, tnat of the spectral
distribution of the pnotocurrent IPh (/-\-),that of the eigentime
.10kX), and that of the raLio 1 Ph( u/-T 0 ( 7\-) on the one hand,
and that of tne light absorption coefficient Y, at the limit of
intrinsic absorption on the other were compared carefully. It
appeared that no unique relation can be established between
these quantit:Les. Hence the dependence of the photosensitivity
Card 1/3 upon the absorption coefficient is obviously superimposed by a

1-OY/157 -28- 10-7/.40
Investigation of the Spectral Distribution of the PhotoconducL3.vity of CdS
aLrgj&4ry*b&jASt77 and 200K
dependence upon the wavelength of the absorbed light. It re-
sults that the fine structure of the spectral distribution of
the photosensitivity at low temperatures cannot be explained
by a mechanism which is connected with the value of t~e ab-
sorption coefficient, with the influence of the crystal sur-
face and similar phenomena. The explanation is apparently af-
forded by a parallel action of several mechanism effective
either in the absorption of light or in the creation or annihi-
tation of photocarriers. Special notice is given to the little
pr8nounced structure of the spectral distribution of xo(%i) at
77 K in a range where the spectral structure of the photocurrent
is expressly evident. This may offer evidence for the fact that
it is not possible to explain the spectral structure of photo-
conductivity by a simple surface recombination of the free car-
riers. From the considerations advanced in this paper it pro-
ceeds that it is necessary to introduce a relation between the
quantiLies determining the photosensitivity of crystals and the
frequency of the exciting light. The experimental parameters
Card 213 which are available at present are insufficient for giving a

SOV/57-28-10-7 '/40
T nv P!-- CdS
the ''pectral Distribution of tne Photoconductivity ol
Single-CrAtab at 77 and 20 0K
unique answer to the ouestion now such a relation should be
established. In this paper only a fe-N possibilities can be men-
tioned. A careful confrontation of the spectral distribution of
the steady photocurrenL with the absorption spectra showed the
absence ot* any immediate connection between photoconductivity
anu the narrow absorption lines. V. Ye. Lashkarev, Member,
academy of Sciences, Ukr'_"~.R, and A. F. Prikhotlko, Correspond-
ing Member of the Acaderky of Sciences, UkrS6R, showed constant
intere.vt in this work. E. r. Rashba discussed the work with the
auLnors. There are j-) figures, 2 tat)les, and 28 references, '16
o+' -,.,hich are c;oviet.
!~UBHITTED: December 16, 1957
. rd 1" 5

SHEYM13UN, M. K. Cand Phys-Math Sci -- (diss) "Study of the photoconductivity
of monocrystals of the cadmim-sulfide type." Kiev, 1959. 14 pp (Acad Sci UkSSR.
Inst of Physics), 110 copies. List of author's works at end of text (15 titles)
(KL, 44-59, 125)
-5-

7 -7
h1072
S/058/62/boo/008/081/134
A062IA101
AIMORS: Lashkarev, V. Ye., Lazarev, D. P., Sheynkman, M.-K.
TITLE: On the passage mechanism of through photocurrent in a metal-semi-
conductor contact
PERIODICAL: Referativnyy zhurnal, Fizika, no. 8, 1962, 29, abstract 8E219
(In collection: "Fotoelektr. i optich. yavleniya v poluprovodnikakh",
Kiyev, AN USSR, 1959, 20 - _J2)
TEXT: Investigations were made of the phenomena.that take place on a
metal-semiconductor contact at a uniform and probe illumination of monocrystalline
CdS samples. The generation of large photocurrents,, many tiMes exceeding the dark
currents, is explained by the idea of a gals- a thin (10-7 cm) double layer ~the
electrons on the metal, the holes on the semiconductor), formed upon the ilittmina-
tion of the crystal and reducing the iiumr work function in the metal---;;-semicon-
ductor direction. Observations of the potential distribution along the CdS crystal
with Au (non ohmic) contacts have indicated the presence of potential jumps at the-
electrodeVattaining 40 - 70 % of the total voltage drop on the sample. The ob-

S/058/6R/000/008/081/134
On the passage mechanism of through... A062/A101
served potential drop at the cathode embraces not only the gate region, but also
a portion of the semiconductor volume (the so-called photocurrent barrier layir).
With an increase of illumination the barrier potential jumps increase on the
cathode and decrease on the anode. When Illuminating an ohmic In contact one
observes either a reduction of the "antibarrier ability" thereof or even a tran-
sition to the "barrier ability", analogous to the increase of the b~avier jump on
a gold cathode. The probe characteristics of the samples, that.is,the magnitudes
of the stationary currents traversing the sample as a function of the position of
the-luminous probe between the electrodes, were investigated. A small photo-
current drop is observed when displacing the luminous probe from*the cathode to
the anode (length of the sample- I - 1-5 mm). The time of setting up o~ the
stationary photocurrent on probe illumination of an In anode (cathode of 'gold)
is 10 times longer than in the case of a Au anode (cathode of indium). The un-
usual inertness on the anode illumination when the cathode is a barrier electrode
(Au) serves, in the authorst opinion, as a'direct confirmation of the hypothesis
on the necessity of accumulating holes to form a gate. Illuminating a cathode -
of indium as well as of gold reduces by entire orders of Maeinitude the photocurrent
rise time in comparison with the illumination of the anodes. For that reason#
Card 2/3

SALIKOV, Ye.A.; FLIDORUS, G.A.; SIMINKW, M.K.
Effect of surface processing on some photoconductivity characteristics
of CdS monocr7stals. Fiz. tver. tela 1 no.4:570-58-9 '59.
WIRA 12:6)
1.Institut fiziki AN USSR, Kiyev.
(Cadmium sulfide crystals) (Photoconductivity)

S/120/60/000/004/024/028
41160(3201,160-3,, //0,S-) E073/E435
AUTHORS' Golynnaya, G.I., Fedorus, G.A. and Sheynkman. Mj&~
................ '.0-C '
TITLE,. Sulphur-Cadmium Photoresistances ~CK-Pll (FSK-Ml)
With Improved Contacts
PERIODICAL: Pribory tekhn.'ka eksperimenta, 1960, No.4. pp.14i_i42
TEXT: Th-i developed technology of producing electrodes on CdS,
CdSe and CdSe-CdSe single crystals consists of treating the
sub-electrode surface of the crystal in a glow discharge prior 10
depositing the metal (Ref.2). The disrharge is produced betw ean
two aluminium discs, under a vacuum hood or in the case of special
cuts in air at a pressure of 10-1 to 10-2 mm Hg. The crystals are
placed on the lower disc and are in electrical i~antaz_t with it.
After treating the crystals in the discharge for several minuies
with an average discharge current density of severai tens of
mA/cm2 the vacuum is increased to lo-5 to 1o-6 mm jig ccl,
and the aluminium electrodes are deposited on the surface of th-?
crystals by evaporation. Aluminium deposited by evaporation bonds
closely to the surface of the crystai and to the mica to which the
crystal is glued, it is mechanically strong and will not ~arrode in
air, even at elevated temperatures, Investigation of the physical
---d 1/4

8 7 3 S?
s/i2o/6o/ooo/oo4/O21./O2U4'
E073/E435
Sulphur - Ca d-nium Photoresistances fCK-Ml (FSK-Ml) U-ith Improved
Contacts
illumination of the crystal. The photoresistances FSK-Ml
produced by IFAN UkrSSR are supplied only with aluminium contacts
produced according to the here-described method. There are
2 figures and 4 references (Soviet).
ASSOCIATION: Institut fiziki AN UkrSSR
(Institute of Physics AS UkrSSR)
SUBMITTED: blay 27, 1959
Card 3/4

8735-2
S/120/60/000/004/024/028
E073/E435
Sulphur-Cadmium Phot ores i stances MI (FSK-MI) With Improved
Contacts
Use
We
ro X104a
0
Card 4/4,

WC

ISO

1, cds
US

-1

za 49 6V tyj 60 6'0 &9 Y'r
Fig.l. Frig.2.

AUTHOR. Sheynkman, M. K.
TITLE: The Mechanism of
Crystals-.(
S/1 BY1101~392/06/21/050
B
B006 B056
the Photoconductivity in CdS-Type Single
PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 6, pp. 1155-1159
TEXT: The author already interpreted experimental results in previous
papers (investigation of the spectral dependence of the steady photo-
current and of the quantum yield of the photocurrent at various tem-
peratures) to the effect that excitons participate in the occurrence of
photoconductivity in CdS-type single crystals. Most scientists still
today are inclined to believe that in these crystals light absorption
has exciton character; the fine structure of the absorption bands, the
diamagnetic shifting of the bands, the hydrogen-like character of the
blue luminescence bands, and a number of other effects are brought into
connection with the occurrence of excitons. One of the most imDortant
proofs for the occurrence of excito_nsILnd their influence upon'photo-
conductivity effects was given by V. Ye. Lashkarev and 0. A. Fedorus
Card 1/3

81633
The Mechanism of the Photoconductivity S/18 60/002/06/21/050
in CdS-Type Single Crystals B006XB056
(Ref. 9)t who found the dependence of the quantum yield of the internal
photoeffect upon the concentration of the photocarriers in the crystal.
The simplest model that is based upon the participation of excitons in
photocarrier production is the scheme of double optical transitions, with
the aid of which the new photoelectric peculiarities of CdS-type single
crystals may be explained. On the basis of this exciton hypothesis also
other experimental results are analyzed, as e.g. the lux-ampere character-
istics of the photocurrent I ph (L) - L, the dependence of the photocur-
rent yield upon the light intensity a 9(L) - L, as well as the function
e(L) , L (vo is the relaxation time of the photocurrent); these three
functions are represented in Fig. 1. It immediately shows that the scheme
of double optical transitions is not able to explain these functions. The
endeavor is therefore made to explain all these effects by using a
different model reDresentation. The function Vo , L_1 was found to be
explainable by qua;ibimolecular photocarrier recombination, and the
increase of the photocurrent yield a 9 1L by a triple-impact model in the
production of photocarriers from excitons, for which there again exist
Card 2/3 X

81633
The Mechanism of the Photoconductivity S/181/60/002/06/21/050
in CdS-Type Single Crystals B006/BO56
three possibilities, one of which is schematically represented in Fig. 2:
The interaction between an exciton and a phonon within the region of a
charged electron trap. In the transition scheme shown in Fig. 2, level I
represents the electron traps which are slightly filled in the dark and
are neutral if they contain no electrons; II - recombination levels
which are nearly filled up in the dark with electrons. This scheme is
analyzed, and it is shown to be able to explain a number of effects such
as the kinetic effects of photoactivation. The new scheme ought, if it
represents real conditions, to entail a number of new phenomena to be
verified experimentally (the photosensitivity of the samples should grow
with trap concentration; the electron concentration in the traps would
have to be proportional to a9, etc.). The author finally thanks V. Ye.
Lashkarev, Academician of the AS UkrSSR, for his interest and discussions.
There are 2 figures and 9 references; 6 Soviet, 2 German, and I French.
ASSOCIATION: Institut fiziki All USSR, Kiyev (Institute of P
AS UkrSSR, Kiyev)
SUBMITTED: October 12, 1959
Card 3/3

2556T
S/185/60/005/002/002/022
c1, 9-1'27 D274/D304
AUTHORS: Sallkov, Ye.A., Fedorus, G.A. and Sheynkman, M.K.
TITLE: On the role of contacts in the effects of photoacti-
vation and infrared extinction of photoconductivity
in US single crystals
PERIODICAL: Ukrayins'kyy fizychnyy zhurnal, v. 5, no. 2, 1960,
141-148
TEXT: The question is axamined whether the peculiar features of
Dhotoconductivity of CdS single crystals are properties of the semi-
conductor or whether (and to what extent) they belong to the contact
between semiconductor and metal. Photoactivation and infrared ex-
tinction were studied on CdS single crystals with ohmic (strongly
anti-depletion) contacts, obtained by applying melted In or Ga to
the surface, and on specimens with depletion contacts, obtained by
Al-spraying of the unprocessed surface. The main result of the ex-
ueriments was that the investigated effects are related to the semi-
conductor itself, and not to the contacts. Fig. 3 shows a block-
Card 1/4

25567
S/18 60/005/002/002/022
On the role of contacts ... D274%)304
diagram of the measuring device. A variable voltage was applied to
the specimen, of frequency 100 kc and anplitude 1.65 v. With given
parameters of the circuit, capacitance of specimens equal to 0.1
pFar., and ohmic contacts, no dependence whatsoever of the photo-
current on the frequency of the applied voltage was observed even
at frequencies of 200 kc. In studying the photoactivation, the
specimen was simultaneously illuminated from both monochromators.
The light from one monochromator was modulated, whereas the light
from the other was fixed. The dependence of the photocurrent-ampli-
tude on the light-intensity was measured at both constant and vari-
able (100 to 200 kc) voltages). The displacement of the photo-
carriers in the specimens did not exceed, as a rule, 1/40 of the
distance between the electrodes (which was 2mm) when a variable vol-
tage (100 kc) was applied. Hence the effects observed in this case
were not related to contacts. Constant-voltage measurements were
carried out on more than 20 specimens with different contacts; the
ordinary method of measurement was used. V.E. Lashkarev, Ye.A.
Sal'kov, G.A. Fedorus, M.K. Sheynkman (Ref. 11: UFZh, 2, 261, 1957;
33, 207, 1958; DAN SSSR, 114, 1203, 19511). The spectral distribution
C ard 2/4

S/185/60/005/002/002/b22
On the role of contacts ... D274/D304
of infrared extinction of the photocurrent on ohmic specimens is
not dependent on the frequency of the applied voltage (from 0 to
200 kc). The lux-ampere relationship, the kinetics of the photo- a
current, the Dhotoac~ivation, and the infrared extinction Are rela-
ted to the semiconductor and not the contact.s. Hence the assump-eiori
formulated by various authors is correct; among these: A. Rosa
(Ref. 6: Proc. IRE, 43. 1850, 1955) and R.H. Bube (Ref. 1:.Phys. and
Chem. Solids, 1, 234, i957). Photoactivation and extinction were i
! V/
observed at both constant and variable volta-e. Whereas in ohnlc
SDecimens the Dhotocurrent does not depend on the frequency, the
photocurrent in non-ohmic SDecimens is.frequency-dependent. In the.,
case of non-ohmic Wepletion) contacts, the effects measured at
constant voltage dive results entirely different from measurements
at variable voltage. Photoactivation is often-observed'at variable!'
voltage only, ind not at constant. Hence measurements of photo- i
current characteristics on ohmic specimens permits determining the,
internal and sLrface prODerties of semi-conductors,.xqhereas measure-.;'
ments oft sDecimens uith depletion contacts - determination of the
properties of the contacts. M~ frequency characteristic of.the-
Card 3/4

25567
S/185/60/005/002/002/022
On the role of contacts... D274/D304
PhOtOCUrrent in ~jftj-j (jqpjgtj,()n contncts apparently-corro-
borates'the assumption of "sluice" formation at SUCh contactA. There.
are' 10 figures and, 12 references: 8 Soviet-bloc and 4 ncr.-So - t-
vie
bloc. The references to the Lngiish-language publications read as
follows: R.H. Bube., Phys. Rev., 99, 1105, 1955; A.Rosa, Proc. IRE
43, 1850, 1955; R.H. Bube, Phys. and Chem. Solids, 1, 234, 1957;
I. Lambe, Phys. Rev., 98, 985, 1955.
ASSOCIATION: Instytut fizyky AN USSR (Physics Institute,'AS Ulm
SSR)
.SUBMITTED- July 3, 1959
Fig. 3 Legend: I & 2 - monochromators;
3 - sinusoidal voltage generator;
4 - millivoltmeter; 5 - amplifier;
6 - rectifier; 7 oscillogrL-T)h;
8 - specimen
Card 4/4
3
Z,
5 4
PUC, 1.

22052
s/ial/61/003/004/018/030
I'+, woo B102/B214
AUTHORS: Pisarenko, Zh. G. and Sheynkman, M. K.
TITLE: Visualization of dislocations in CdS single crystals
by etching
PERIODICAL: Fizika tverdogo tela, v. 3, no. 4, 1961, 1152-1157
TEXT: It is known that on the (0001) plane of CdS single crystals, ptch
patterns of hexagonal form appear, which are attributed to dislocations.
However, no methods of visualizing this for other planes, e.g.,
(1170) or (1070) are known. Such a method is suggested here. The CdS
single crystals were obtained by synthesis and sublimation. First, their
orientation was determined by X-rays. They were, for the most part,
plane-parallel plates (5 x3 AO.01 mm) which were partly smooth like gla
and partly striated. Some diverged from this orientation by a few
minutes up to 150. Before and after etching the surfaces were studied
by metallographic microscopes, MW11-5 (MIMI-5) and M~-411-8 (MIM-8),
visually and by means of microphotos. The best results were obtained by
etching in hot hydrochloric acid vapor. Concentration of the acid,
Card 113

22052
S/1 81/61/003/004/018/030
Visualization of dislocations ... 3102/B214
temperature, and duration of etching were varied to determine the
optimum conditions. It was found that the results were most favorable
under the following conditions: The crystals were exposed to vapor for
1-1.5 min at 1000C and placed 4-5 cm above the acid surface; the acid
concentration was 25-30%. After etching the crystals were rinsed in
water. During etching the crystals were placed in a fine molybdenum
net. The relationship between etching pits and dislocations was also
investigated. The following conclusions were drawn: As in many other
crystals, the etching pits are arranged in terrace form, their shape
depending on the face indices. If the etching time is extended, no new
pits will appear. This indicates that the etching pits correspond to
dislocation lines. On studying thin crystals (up to 10 V) it was found
that the etching pits were arranged antiparallel on opposite faces (1120).
One can assume that these were on one of the dislocation lines passing
through the whole crystal. A characteristic feature of dislocations is
their behavior on thermal treatment. Experiments of this kind (7000C,
He atmosphere, 4 hours) showed that the etching-pit density rises up to
100 times on heat treatment. It was also found that the dislocation
densities at the center and at the edges of the crystal were very different.
Card 2/3

22052
s/lal/61/003/004/018/030
Visualization of dislocations B102/B214
This shows that the introduction of impurities by diffusion from the
surface leads to a highly inhomogeneous distribution of the impurities.
Further experiments will show whether there is any relationship between
the dislocations of CdS-type crystals and their electrical and photo-
electrical properties. The authors thank V. Ye. Lashkarev, Member of
the AS UkrSSR, for his interest; and V. N. Vasilevskaya and L. I.
Datsenko for discussions and help. There are 5 figures and 6 references:
2 Soviet-bloc and 4 non-Soviet-bloc. The three most important references
to English-language publications read as follows: M. Kikuchi, S. Jizima,
J. Phys. Soc. Japan, 149 1638, 1959; D. C. Reynolds, S. J. Chysak,
J. Appl. Phys. 31, 949 1960; J. Nishimura, J. Phys. Soc. 'apan, .150
732, 196o.
ASSOCIATION: Institut fiziki AN USSR Kiyev (Institute of Physics,
AS UkrSSR, Kiyevj
SUBMITTED: August 2, 1960 (initially) and October 26, 1960 (after
revision)
Card 3/3

25684 3/161/61/003/007/006/02-3
0 3-r1 113 ff/ /'~ I B102/B202
- - ~t
AUTHORSt Lashkarev, V..Ye.,, Ballkov, Ye. A., and Sheynkman, M. K.
TITLEt Study of the photoactivation of the photocurrent yield in
CdS single crystals
PERIODICALt Fizika tverdogo tela, v. 3, no. 7, 1961, 1973 - 1982
TEXTt The authors attempted to study the activation of the photocurrent
yield in CdS-type single crystals in a temperature range of from - 70
to + 1150C. The method consists in the followingi the specimen is
exposed to short rectangular pulses and, independently thereof , also
subjected to an exposure constant with time; the experiment shows that
with increasing intensity of illumination the slope of the first part
of the curve of growth of the photocurrerft determining the photocurrent
yield increases. The photoactivation of CdS single crystals has been
discovered and described by Lashkarev and G. A. Fedorus (Izv. AN SSSR,
ser fiz. 16.81, 1952). It has been observed by the authors also in CdSe
and CdS-CdSe. Several attempts have been made to a theoretical study
and explanation of this effect. Thus, e. g., L. G. Paritskiy and
Card 1/5

25684 S/181/61/003/007/006/023
Study of the photoactivation ... B102/B202
S. M. Ryvkin (FTT, 11, 545, 1960) explained the photoactivation in
CdS-single crystals by the presence of fast adhesion levels for photo-
carriers. The authors found that in these crystals the curves of growth
of the photocurrent consist of two parts with different slopes and that
the exposure influences only the slope of the second part. In some cases
the concepts on photoactivation strongly diverge. In view of the
experimental results this process is obviously complicated. The present
paper is intended to contribute to the explanation of these problems.
The main possibilities of explaining the effect of photoactivation consist
in the explanation of the relationship between the actual quantum yield
G and the light intensity L as well as in an application of the concepts
on the fast adhesion levels to the kinetics of the photocurrent. In
order to explain the nature of the photoactivation, a so-called
"discriminating experiment" is necessary which admits the clear determina-
tion of the proper mechanism. It is demonstrated that different mechanisms
of photoactivation may lead to different shapes of the curves G,(N) where
Gf is the slope of the second part of the curve of growth of the photo-
current and N the electron concentration. Three mechanisms are studied
Card 2/5

25684
S/181/6-1/003/007/006/023
Study of the photoactivalvivn ... B-1 02/B202 -
more thoroughly. a) Existence of fast adhesion levels (discrete level
tion Xi). Gf(N) is then given by
of depth Ui, and concentrq.
G( ticL factor
Gf -11 + 2 ! -ahe i eI~i qexp(-Ui/kT); q is a'statis'
Ni, + N)
of the conduction band equal to 3.1019CM-3 at' room teDfperaturLt rhen*
M M b) The 'Last' adhesion levels form not one disc.rete level but.
eff e'
.an energy band from.U 1 to U2 in zhich they aie irregularly distributed
with the density'/"(U);
'R (U) (2)
Q2-ff
Q2= Qe QI=,Qe
Card 3/5

25684
B/181/61/063/007/006/023
Study of the photoactivation ... B102/B202
then holds. c) The occurrence of carriers is the result of a phot oactive'
6:piton decay on an occupied slow electron level (concentrationKi,
depth U Then, ~ . N G * W*where G is the.maximum quantum
f Qi + N max $max
yield, q4exp(-Ui/kT)., These three cases are-theoretically studied
in detail an the G,(x) curves, where x are compared. Exyrerimental
studies werb made vrith non-treated CdS-single crystals (grown from vapor).
Indium sputtered in a vacuum served as electrodes thus wa-ranting the
linearity of the volt-ampera characteristics in a wide rAge of-voltage
and concentration. Also, the lux-ampere characteristics were measured
in all spepimens. A Kerr cell served as.light modulator. The curve of
growth. of the photocurrent a typical specimen is shown in Fig. 3.1 The
G (I ) curves were taken from several specimens. Accordirig.to the
f Dhot
course of these curves the specimens could be divided into two-groups.
ComDared to the theoretical results, the experiments show that in the
CCIS-single crystals with linear lux-ampere characteristic photoactivation.
Card 4/5

25684
8/161/61/003/007/0C[6/023
Study ofk' the photoactivation... B102/3202
is caused by the existence of fast adhesion le~rels of either discrete or.
continuous energy distribution. Fhotoactivtty which is connected with
a change of,the actual quantum yield as the result of a change of the
expoEure intensity Idbuld not be observed.' The're are 6 figures and
9 references: 6 Soviet-bloc and I non-Soviet-bloc..
ASSOCTAT-,ON: Institut poluprovodnikov AN USSR Kiyev (Institute of Semi-,:
conductor; AS UkrSSR, Kiyev)
SUB.-I.ITTED: January 2a, 1961

Fiq 3.
Card 5/5

~0802
1 61/00
~,,Vl 77 00 3' !9 6 3/011/049/056
-13136
AUTHORS: Kynev, St., and Sheynkman,
TITLE: Effect of a strong elect:~i -.i -.-- the kinetics of photo-
current in single crystals o- -.8
PERIODICAL: Fizika tverdogo tela, v. 3, - ~ ''. 1961, 3539-3541
TEXT: During the measurements of the 'norz.-AE:z~ 'n photocurrent the
suacimens were either in a vacuum (10-6 m:L Hg',' --:- in air. When stead
photocurrent had been established after (X = 5200-5300 XY), the
!-',-ht was switched off and the specimen remain-~J :,n darkness for a certain
period of time At d (Atd = 20-600 see). Tl-;, was again switched on
and the curve of the increase in photocurr~-.-. )bserved on the screen
an 3H0-1 (ENO-1 ) oscilloscope. The time :',~q'jzred for a 5od. increase
1. -
was Galculated. The experiments were 4~th the same periods of
darkness and light, but during the dark per. i sinusoidal voltage with a
freq,uency of 70-100 kc/sec and anamplitudi4 --f kv was applied to the
side electrodes. It was found that T~;Oe,, .7.%:-"erably longer in this
Card

30802
-3'/,e1/61/OO3/O11/O49/O56
Effect of a strong electric 7_--~,4/B138
:;ase than in the absence of a high-frequercy e*."'. In some cases this
increase was 200 times. Heating the spt~i:,-im~ no effect on T 50% . The -r
value increased with the amplitude , the hz~,11 ".;-quency field, and the lerQTh
of the dark period. The large increase ir- Itributed to deetructionof
el'sctron adhesion levels and hole trapping adhesion levels by the
electric field causing redistribution betw,:~~r~ ne -arious recombination
levels, followed by rapid recombination. -"'-~-. ~- %re given to Academician
AS UkrSSR V. Ye. Lashkarev for discus-n-i-on--, are 1 figure and
12 references: 6 Soviet and 6 no--S)_,iie~, '.hr-_~e most recent refer-
ences to English-language publica--ions r=sz- _-.'__!ows: I. T. Steinberg,-.r.
I. Phys. Chem. Solids, 12, 354, 196o. W. W. ~;7"--.' F. E. Williams. Solid
State Physics, 6, 95, 1958. R. N. Dexter. J. Chem. Solids, 8, 4()4,
1959.
ASSOCIATION: Institut pOlUDrovodnikov A11, 'USSiR (institute of
Semiconductors AS UkrSSR, K--y,--
SUBMITTED: March 317* 1961 (inltiai2y' 1961 (after revision)
Card 2/,,~~

2,1443
S/185/6i/006/002/019/020
On the specLral dependence of ... D21O/D304
ASSOCIATION: Instytut napivprovidnykiv AN URSR, m. Ky iv ~Insti-
tute of Semiconductors, AS UkrSSR, Kiyev~
SUBMITTED: January 2, 1961
x
Card 3/3

37809
S/120/62/000/002/037/047
0 0 El4o/El63
AUTHORS: Kynev, ~t.', kS B.1
,beynkman, M.K., Shul'ga, 1.
and Furs enko
TITLE: Contactless method of measuring the parameters of
certain semiconductors
PERIODICAL: Pribory i tekhnika eksperimenta, no.2, 1962, 154-159
TEXT: Essentially, the method consists in placing the
sample of semiconductor between two capacitor plates-in a
Hartley oscillator circuit and measuring the change of grid
current. This can be calibrated in terms of the bulk
conductivity of the sample. The oscillator operates at about
10-15 Mcs. The electrodes are shaped so that the sample can be
illuminated, for determining its photoelectric propertieS..
Some applications are: acceptance testing of samples for their
photoelectric properties, under conditions eliminating the
distorting effects of electrodes in contact with the sample;
study of just these distorting effects; study of samples in an
enclosed volume without requiring their exposure to the
atmosphere; study of the kinetics of,infra-red extinction of a
Card 1/2

66)
37 93 1
s/18I/62/004/005/020/055
3125/3108
SIneynkman, K. , and Luklyanchikova, '1111. 3.
ore features of the photocurrent noises in the exciton
S
mec'-anism of carrier production in insulating
.io'-oconduc'ors
2izilKa tvardoGro tela, v. 4, no. 5, 19052, 1213-1221
sto..rtin~; irom the spectral density SM = 4fj(G)coszu6dG, cv=2nf of
0
the in-~ensity of fluczuations and usinl- the correlation function
Li(t-t0 An(t)_/n(t0 6 t-t 0 the authors derive 'he spectrum
S. (A 4,.jjrj(An2,22-AnA, 712) 4TI2--2 (_T.2y,
D (I -j- w2-.2,) D (I -I- W2_2 (10)
2)
01 -.I-.e I)hotocurrent noises for (a) the exciton mechanism of production
(rat-e of ,~_-oduction cLLhU 6
and (b) 'he direct band-band excitation (rate of
production 1). The au'hors use 'he correlation method o~ K. ". Van Vlie'
k. L - 11
~nl!i Lok (Physica, 22, 231, 1956). From (10).the expressions
C _~rd , 14'

S/18 62/004/005/020/055
features of the pho-Ilocurrent. B125 106
S om, e
'4 4-c 2(
-.2 2
212)
--CC~~2) (I -*- 2
(Ti w (13)
,;-B2'*2
B'j- a' - a" -i- (a*' 2Bja*jja.'
I 12a 1 22
-lia22) (14)
n n
B2'i = 26 (n no) (91 - h); (15)
9~ h) - sh
B--=B2-i (n no)
12
with
aq Yn--jAnj --t- Yn-,an., a,_, 1l:;= 11 B,j jj,~
Card 2/~

S/181/62/004/005/020/055
.:,o::e feE;tures of the photocurrent ... 3125/B108
n_
Bii -_'2 NJ i = 1, 2, s; Bij -pij -pj,, S;
Pik, -Aj= 1, 2,
V (12)
.-e rived. 72`ie index J refers to exciton mechanism. Fig. 1 gives the
L U
-e::e o~ zr~7rs-_ 'ons. n is ~he concentration of the additional (photo-)
e.~ec;rons,71 the concentration of the trapping levels (denoted by I) for
e acti,on~3 -that are in heatu exchang- with the conduction band, h - the
,zo.a_ number of electrons on these 'Levels, E= bQe- u/kT _ the Drobability
,+,. 3
o' ejection into t;Ie band, ',=2(2;-L:r, f.T)3/2
U /h - the statistical factor of
~;.-.e corduc-.io, band, u - the depth of the levels i. The levels !I are
c_~rrier recombinzition levels. n is the number of 'he dark current carriers
0
in the conduction band. Fig. 2 shows 'he dependence of the zero frequency
noise S on -U*-e electron concentration for the cases (a) and (b). The
cu~,ntity (L2//,)e xc has a sharp maximum in acertain region of n. The
11--oLf-sustainin'-11 of 'he fluctuations in the conduction band causes a
exc
increase of the decay time ~Li of 'he fluctuations. The exciton

S/161/62/004/005/020/055
6o--.e features of the photocurrent ... B125/B108
se can be muc` greater than
*he noise in the absence of
no. k, U U
e.vcizons .`11,'ne -ohotocurrent increases rapidly with the illuminance in the
re.._4or, of Inzense photocurrent fluctuations. These phenomena are caused
7~ne instabi'li-&y of the quantium yield which leads to a positive
e e d'-- a c 14 -TO'_-ere are 4 figures.
;j51G1T,.Tj():': Tr,_~_'-ftUt poluprovodnikov AN SSSR Kiyev (Institute of
- t' ~ t. U
Semiconductors AS USSR, Kiyev)
1 ;,1 171 L D. December 25, 1961
1: The scl-eme
IdS type).
Ti:;. 2: Deuendence
L.1~ correlation tilnes
o' to ca_,'ri ers .
of the transitions
of the low-frequen3y
-C. (3) and -L-exc
1 1
in an insulating photoconductor
Sexe
noises Sand (2) and of
0 (1) 0
(4) on the concentration n of
Card 44

SZ18~;',62110C)710021015 '01'
D2c~q/D;302
-ro'val
-7,
ism 0
',a, roiscs
1e c
S.
tudj
y
conGu o. 2, lc62,
' ' 'r"ll Ir.
-ryy 711U!
0 2-5 2) 2 5 '.,,tocurreynt nOises
d e 0 f -1
I Y S:,. - - '0"')Otocarrier
'ca S 0, nno-
4- r
e uu- -u
-rr--7 ~ eycj
Li-hat +
e ac -,e d u b
n r Qeter:~aned i -p
0 ho-
on c a!! -fected by a rechan-
a
-u a.L -
C)-- 0-_,l e-~:Citorl
-Ives t --r- ed C G-j
---e-t noises ,o
-:-ed eiectron
lic! OF --- ch'arE
'u-, -- -1-e -or thic ca
;-icini ~j eme r -
_a~sitiolll s--- ati on fu':10-
-e, ectron ',,,e tl
",noll s o- the COI-
r T' e an L
"I co- - --, C)1-1. The
A e t e rr-irked 0 ~ , 1 s ec---lat-
e !-!Oise "'las n
~j
S
on --anc
C cc---e;
Vj----jch enter
es and
V3

S/185/62/007/002/015/016
O,n neterL,.inin:- tl,e of D2c',g/D302
, I.- SM - a
`e.aotin~; the cond`uctlion electrons alld II - tlle munber of elec-,rons
11 ;. are cieterLined --y -z-he 7-0k-!r-er-Pl_nYjCjC
levels),
T~-ereby -~he is-.,porlu,ant noise-cllla-rocteristlc 771-12/n ---S -."e
L -r,
-
re,,iuenc, spectrum of tlhc ni,-13es 3 is determired froi:, -"e '-e- y
corl-c-lation -Punction by means of V-1icner-Khinchin's tlheo-.em.
com-)=-ative calcuic..tion ,-,,-,s -,:a-de of th,e noises in the szmr-, tranzi-
tion scheme, --,'Or t.11-e case of ar. a-xciton m-ech--N^,ism of carrier Cene-
suen a inecr-a-inism.; ..(A in ac-
r-I.,I-on and IC-4-e- Values, 11
?- to
_ .1onS llfe-r-n 0 r.
~Jlkal Ca-Culu~* ased, TD-le cor:,-,-a ison silo-.,ied -!-at,
the exci J-on noises great I,- e:..--
i t L concentration nO I o0 cjn73 7 _U 0
ceeded t-;--,ose o--:' a mec-hanism, -without excitons. At the maximwn of
-~e d' - an'
-~,-vs--n curve, z - fference in the value of So (wJ 'A
i~ -L- - - - LI
w i t-ho -,,, t ec i t on ss u -p t o 6 o r d e --n s o f 1--a n i tu d e .th a f ur th e.-
4---crease in r-, zhe exciton naises dec-I-ea-se, reachi ...ast to-e sa-
ne va-lucs as -c'aose Without excitons. The cuaantity ~:ihich
equals u.nity (,..,--J`.-nout an exciton mechanism;, Js considerably 1--r-
,Eer i_-:' excitons are -present-; in fact, a," the 1-C reaches
severa'L thous--id. T.hus, the qumtities So and :,'-n2/n, related to
~.he noises, differ considerabiy, depending on the presence or :1-b-
/lard 2/3

371B6
S/185/62/007/004/010/018
D407/D301
Svyechny!wv, S. V., Chalaya, V. and
Sheynkman, 1A. K.
On the nrobe characteristics of X-ray and
nhotoelectric current in OdS-type single
crystals
P_7R_-GDICAL: Ukravins kyy fizychnyy zhurnal, V. 7, no. 4,
1962-, 39~-40x
TE'Y'2: The dependence xas studied O.L the photocurrent on the
ncosition of the -orobe (between the electrodes) during the exci-
tation of CdS, CdSe, CdSx. CdSel-x single crystals by a narrow
ii-h' or X-ray Drobe. The influence of the following processes
', u
on the conductivity of the single crystals under local excita-
0
tion was considered: electron*drift from the lighted to the dark
side of the crystal, bipolar diffusion of photocarriers, exciton
Card 1/3

S/185/62/007/004/010/018
On -,,he probe ... D407/D301
d1l"fl-usion, resonance energy transfer in dipole-dipole inter-
actions, reabsorption of the luminescence iight, etc. it was
.kound tha6 no definite conclusion can be reachedfor the dominant
-hoto-current comrionent and the role of the hole component by
considerins- the sta-Gionary probe characteristic of the photo-
current only. The probes were 0.1 mm. thick, which is by one
order of magnitude iess than the distance between the electrodes.
Visible light of various ~.,.,'avelength was used; the wavelength of
C)
the X-rays was 0.708 and 2.2S5 R. It was found that the maximum
of the nrobe characteristic can be located (for both the light
E,_-id the X-rays) at ihe cathode, anode, and also between them.
T';-.e value of the photocurrent at the maximum of the Drobe charac-
6 _ 10-8 amp. This is
tleristic near the cathode is about 10-
about 4 - 5 orders of magnitude higher than the calculated values.
The trapping factor q was estimated (q = 10 3). The photocur-
rent at the anode was also larger than predicted by theory. The
Card 2/3

SALIKOV9 YP*Ao; SHEYNYD"y M.K.
k method for determining the parameters of recombination
levels in monopolar photacofiductors. Fiz. tver. tela 5 no.2:
-397-404 F.163. (MIRA 16:5)
1. Institut ioluprovodnikov AN UkrSSR, Kiyqv*
(Photoconductivity)(Cadmium sulfide-Electric properties)

SALIKOV., Ye. A.; SHUNWAN, M. K.
Some properties of contacts betveen a metal ('In,, Ga),and a
photoconductor (GdS). Fiz. tver. tela 5 no.1:237-239 A '63.
(MIR& 16:1)
1. Institut poluprovodnikov AN UkrSSR, Kiyev.
(Photoconductivity)

TROFIMENKO, A.P.; SHEYNKMAN, M.K.
Effect of an elettric field on the thermally stimulated
conductivity of CdS single crystals. Fiz.tver.tela 4 no.7j
1963-1965 Jl 162. (MIRA 16:6)
1. Institut poluprovodnikov AN UkrSSR, Kiyev.
.(Cadmium sulfide crystals) (Photoconductivity).
(Electric fields)

E
KYNEV, St.; SHEYNKMAN,&L-;_~HULIGA, I.B.; 41IRSEWKO, V.D.
I- ____ -
Method for ncncontact measurement of the parameters of certain
semiconductors. Prib. i tekh. eksp. 7 no.2:154-159 Mr-Ap
,62. (MIRA 15:5)
1. Institut poluprovodnikov AN USSR.
(Semiconductors-Measurement)

SISY1,1MAIIJ 11 K,,; LTJK--YAVGHIKOVA, N.B.
Some characteristics of photocurrent noise due to the exciton
mechanism of carrier generation in insulating photoconductors.
Fiz. tver. tela 4 no-5:1213-U21 MY 162. (RMA 15:5)
1. Institut poluprolrodnikov AN SSSR, Kiyev.
(Photo-conduotivity-Ncise)
(Excitons)

SHEYNKIWO M.K.
A New possible mechanism of recombination in semiconduct~ri. Ukr. fiz.
zhur. 7 no.12:1364-1365 D 162. (MIRA 15:12)
1. Institut polyprovodnikov AN UkrSSR, Kiyev.
(Semiconductors--Klectric properties)

L 18024-63 LW-(j)/EWP(q~/EWT(m)/BDS ..AF.FTC/A8D/E8Dr3--- JD/Jo.-
ACCESSION INR: AP3003873 S10181163100510071180511813.
AUMORS: Trofimenko, A. F.; Fedorus; G. A.; Sheynkman,, M..K.
TITLE; Dependence of themdCLectric conductivity- on illumination, conditions PoA
.Lireated in sulfur fumes
single crystals of-aA
1-7
SOURCE: Fizik tverJogo tela, v. 5, no. 7, 1963, 1805-1813
TOPIC TAGS: thermoelectric conductivity, illumination, Cd, S, fumes, coulomb
barrier, activation energy, sulfur, cadidum
ABSTR.,',CT: In their investigation the authors varied the temperature, duration,
aid condit-ions of illumination (samples cooled to test temperature during
uninterrupted illumination, or cooled to test temperature in darkness and then
illuminated). In the region of -100 to -85C, the maximums of thermoelectric
conductivity observed at -10 or +18C with a duration of 20 sec depend exponen-
tially on the test temperature of the sample., They have activation energies
ranging from 0.7 to I ev, depending on the sample. The dependence of the-ther=-.
electric current on the duration of illumination proved to be exmonential, varying
as 1~he 3rd to hth power of the duration. 'The authors discovered that the po~itioa
of thermoelectric-current peaks depends on the conditions of illumination: only
Card

T. :18024-63
iCCESSION NR: AP3003873
one peak appears at +65C during continuous illuminationt illumination at temper-
a
L,ures below -50C givestwo peaks (at -10 and +18C), and'the
' _peak at +65~0 is either
absent or very small. . These peculiarities in the thermoelectric conductivity may
be explained on the 'oasis of a complex structure center having several nearby
trapping levels surrounded by a single repulsive coulomb barrier.. "The authors
express their deep thanks to Academician V. Ye. Lashkarev of the Academy of Science;
Ukrainian SSR for his interest in the war and his very valuable discussions, and
they thank I. V. Markevich for aid in making the measurements." Orig. art. has:
.6 figures and 2 formulas.
ASSOCIATION: Institut poluprovodnikov AN UkrGSR Kiev (Institute of Semiconductors,
of Sciences, Ukrainian SSR)
SUMITTIED: 28Jan63 DATE ACQ: 15Aug63 ENCLt GO
SUB CODE: PH NO RE? SOV: 006 OTHER: 006--.---,
.Card

6111-I'VIKMAN) M.K.
Possible mechanism of recombination on multiply charged centers in
semiconductors. Fiz. tvar. tela 5-no.10:2780-2785 0 163.
(I-MIA 16:11)
1. Institat poluprovodnikov All Uk-rSSR, Kiyev.

LASHKAREV, V.Ye.; GOLYMAYA, G.I.; SMT-YNKMAII, M.K.
...
Fast recombination channtl an the surface of CdS single crystals. Piz.
tvar. tela 5 no.12:3420-3425 D 63. (MITRA 17t2)
1. Institut poluprovodnikov AN Ukr-SSR, K-iyev.

SHEYN124AN, M.K.; LUKIYANCHIKOVA, N.B. (Lukmianchftcrya, N.B.]
-uati s on photocurrent noisa.
Effect of mobility fluct on
UI-r. fiz. zhur. 8 no.10:.1103-1109 0 163. (MIRA 17:1)
1. Institut poluprovodnikov AN UkrSSR,, Kiyev.

KOLO~=S, B. T.; MAMMOVA, T. N.; LEBEDEV, E. A.; MAZWS, T. F.; STEPANUV, G. i.;
LASHKAREII, V. Ye.; SALKOV, A.; SHEYNKMATI, M. K.
"Fast recombination processes in single crystals of CdS and CdSe."
report submitted for Intl Conf on Physics of Semiconductors, Paris, 19-24
jui 64.

p
L uno "wt, N. S.,*Lj, 11! VYO.."L.
I", KO, A.A.; SILI YlJCJLlI,
Determ ining the quantun, yield of the internal
Cd3 single crYstals using a short light Pulae.
0, no.7:807-c",10 J1 164.
t iv-1 "COV) I-, L
photoeffect in
Ukr. fiz. zhur.
(IfIzlk 17:10)
1. Institut poluprovodnikov JUT Uk-r3S!,, Uyev.

J*.13. [17,~Iolovych, I.B.1; SHEYRMAF~-M K.
I
De,'Lermiining the parameters of recombination centers in single
cu--yztals of GdS, We, and GdS,'-3dSej-,,,. Wicr. fi-z. zhur. 9
no.10:1153-11.57 0 164 (MIRA 18,.l)
1. institut poluprovodnikov All. UkrSSR, Ki ev.
17

5363!~:65 EWT(d)/E','1T(l )/E.'IT(m)/EPF(c)/EWP(I)/EWiNt~~/EWP(v)/T/c-'dP(t)/tEC(b
(h)/Ed~(b)/EdF-(1)/E/JA(h) Pf-4/Pr- /Pe~4 /G./d~AT
fi-4 IJF
ACCESSION XR: AT5010255 UR/0000/65/000/0()0/011
AUTHORS: Sheynkman, M. K.; Shullgaq I. B.'
ITITLEs Device for remote measurement of parameters of thin semiconduotor:filmi
SOURCE: Mashiny i pribory dlya ispytarLiya metalld* i- plastMaS13 ()ftChJnPJ3 and
!instruments for testing metals and plastic') abo'rnik stateye Moscowp Izd-vo
Washinost M eniye, 1965, 112-116
:TOPIC TAGS: semiconductorg semiconductor research# semiconductor material# semicon--
ducting film/ 6NZP lamp, ENO 1 oscillograph
ABSTRACT. A device for r~6pid measurement of parameters of semiconductor films i
described. The apparatus removes the need ro-r direct contact of -electrodes upon
test specimens and permits the study of parameter distribution along the film, as
well as.the investigation of kinetic photoelectric processes. The method of measure4
ment is based upon the use of a three-node generator originally proposed by Ye. K.
Zavoyakiy (Metod imae eniya potentsialov vozbuizhdentya atomov i molekal.
Eksperimentallnaya i teoreticheakeViL fisika, T. 6.# Vyp. 1, 1936)."A circuit dia~-
gram of the device is given. Special elemento in its network include a 6WZP lamp' 'L"
I . ~
More;-
and an ENO-1 oscillographe The authors describe in detail the functions of the
Card

S H f. Ii,.
Possibillitv of -'-L-=-reccmbi-ation on =11-luiv c~-arged centers
and silicon. Fiz. tver. tela 7 no.1:28-32 Ja 161-
-- n o~erraaniizm
(Maul 18:3)
1. institut pol-Uprovcdnikov AN UkrSSR, Kiiev.

L 2197-66 -.,EWT 1)/E~~ ff(~)/Didb
ACCESSION IMS AP.5014.572 181/,65/007/006/1717/17P
AUTHOR: Laahkarer, Vo'Teo*j 11V!~ ~enko A.V#jMLyn1=np
.TITLEt Comprehensive investigation of the kinetics of the processes of
recombination and infrared quenching of photocurrent. and cadmiun sulfide
SOURCEs Fiziks. tvarddgo telap To 7p no* 69 126.5, 1717-1732
A,
TOPIC TAGSt recombination luminescence, ricombination radiation# ir radiatlop~
luminescence quenchingg cadmium sulfide, cadmium selenide
ABSTRACT% In view of the fact that earlier studies of infrared quenching anav,
recombination in CdS were limited only to stationary or slow transient
processes, the authors propose now independent methods of determining the
various parameters characterizing the centers of slow and fast recombination-
in a unipolar photoconduator4 -It is shown in partLeularl that the initial
sections of the infrared quenching relaxation curves am yield additional
information on the parameters of the tarious recombination centers In Me
The methods are based on a".simultansoua study of the kinetics of the photo-
113

L 2197-66
AOCESSION NRt AP5014571
current and its infrared quenching in the presence of additional illtmination
produoedby short dVration:light pulses of vs~rying intensities and varying
spectral contents. The measurements were made on thin single crystals of CdS
and CdSo# grown by various methods. The constant illumination was produced with
an incandescent lamp and a set of filteral and the additional light pulse was
a flash lamp with pulse duration 2.5 x 10-6 sea and a sot of filters. Longer
puloas wore produced with a mechanical dise shutter and an Infrared molnachro-
a
M
tor. The pulse methods were supplemented with an analysis of the lux-ampere
characteristic of the material. The parameters determined were the concentra-
tions of the vacancies and of the electrons at the r- and a-levels, the
concentrations of the levels themselves, the fractions of the various carriers
captured at the r- and a-levels, and the cross section for the capture of an
Infrared photon by an unfilled r-oonter. The methods for obtaining the various
parameters are indicated, The values of the recombination-center pamieters
measured by various methods' in singlb crystal OdSp and in part also in OdBe
are good agreement, 'Orige art* has$ 7 figur6aj 26 formulaso.and 3 tables
Card 2/3

AmEssion NR3 Ap5oi4571
ASSOCIATIOM Institut poluproyodnikoy AN UkrSSR, Kiev
ductor!, AS Ukr SSR)
22Dec64
SUBMITTEDs
NR REF sovs 009

2296-66 D1T(l)/T/fk1A(h) 'IJP(c) AT
ACCESSION HRs AP50145W UR/0181/6.5/007/006/11"/l 4
,Ail
AUTHORs Tolpygop To. I.; Tolpygo, K. B.; Sheynkmant-M. K.
Y Y
TITLE% Auger recombination with participation of carriera bound to difforetip
centers
SOURCEt Fizika tverdo&o tela, v- 7j no. 6, 196~, 1790-17?4
TOPIC TAGS: electron recombination, impurity level, semiconductor cart.-ler
ABSTRAM This is a continuation of earlier work by one of the authoris
(Sheynkman, FTT v. 7, 28, 1965 and earlier)p where the Aug6r recombination
mechanism was proposed for multiply-and singly-charged centers, wherein tile
capture of a minority carrier is Aocompahled by the emission into the bond of
another carrier of opposite sign, localized on the same center. In the present
article the authors present a quantum-mechanioal calculation of the cross
section for the capture of minority carriers by shallow singly-charged neutral
particles, uben the energy released in transferred to the majority aarrierl
Card 113

L 2296-66
ACOESSION RRi AP5014582
which is localized on a neighboring center having the same ioni2ation energy
or larger. This carrier is emitted into the nearest band. The capture of
carriers by deep centers is also discussed. Numerical estimates show that
Auger recombination processes can become com arable with or even larger than
p
radiative and other types of recombination at sufficiently low temperatures
and at high impurity concentrations. Values on the order of 107 21_ ld"22
are obtained for semiconductors of the Go, Si, o1 Oaks type in the case of
shallow levels, and of the order of 10-19 - lor 0 for capture by deep 'levels.
This indicates that a capture of a carrier by a shallow center of large radius,
with transfer of the energy to a carrier of opposite sign localized on a
neighboring deep center# would be most effective. The authors -thank E. I.
-,.6Rashba for valuable critical iemarkej and V. Ye. Las 2. Kalashnikoyl,
and V. L. B yev n tons,
onch-Bru.2_icb_Pr-;nterest in t&e -work a YJ
Orig. art. hass I figures "tP 5 formulaae
ASSOCIATIONt Institut poluprovodnikoy AN t1krSSRj Kiev (Institute of 8smi-
Card 2/3

L 22 96-66---
ACCESSI6 HR: AP5014X2
conductorsALkrSSR)
SMMITTEDs Won65 ENOLs 00 SUB OODGs 88
HR REF SOVi 005 OTHRM 002
Card 313

:-ACCESSION-0 -AP50q'+39-V-
9027 00 0
3
AUTHOR: Luk"yanchykovaj, N. 9.(Luklyanchikova N.B.Y-. M~Aevych,- I w- V*. (IUikevich$I~#.),,
dorussG.A.)~ 5119alown, MOK.
TlTa,: Investigation of p~otocurrent noise of CdS.alngle crystals.with-Vatiouz
contacts
Z
P-
SOURCE: Ukrayinalkyy fizychnyy zhurw2,, v. 10j, no. 1 1965s.27-38
Urr
TOPIC TAGS: cadmium sulfide single crystal, photocu ent noise spectrum, photo
response spectrum
ABSTRACT: The contact noise of CdS single crystals eq4ppad xith- variouo- ohmic
electrodes was iuvestigatedo 'Unlike in other stixdies,, the - contact - noise- was -
separated from the volume noise by using a probe.method of noise.measuriment. The..
spectrum of the photoresponse to a weak simwoidally~= .odulated Iight 6f'c onstant
intensity was plotted simultaneously with the noise spectrum measurments. Tha
J
methods of preparIM the photoseni3itive CdS crjotals and of depositing the currimt
contacts on the crystals are described. The form of the investigated samples and
their electrodes is illustrated in Fig. 1 of the Encloswe., which shows also the -i
Card

ACCESSION NRt AP5004320

block diagram of the measurement set-up. The noise aud.photoresponse ape ctra-were'. .

se
taken In the frequency range from 2 cps to 1 kcs& At 2 cps the equivalent noi
impedance of the measuring set-up was 20 kilob=., The results
indica~te that it is-
.
possible to obtain noiseless ohmic contacts on thin and thick US ain~le crystals
either by welding-on indium, or by cathode sputtering.of cadmium. Other-methoas of'- ..
electrode preparation resulted in noisy contacts. The noise spectrum and the
square of the photoresponse were found to differ fromi theoret_jcj6l~- and large
-sample
, dN2
values of aVil >> I (N -- number of carriers in the _4japersion Of
,
the carrier number) mete observed, whereas ordinary theory yie1ds-aN2A - 1. The
-

measurements have shown that the value Of AN i - not ~co a-;W&t6
M a nne e the quality:
of the contacts, since values both less than unity and-appreeiably larger than-,
unity (for example, 500) were obtained. Hany facts indicate that,the variations-
in these quantities are due to inhomogeneities in
the crystals. The authors are
thankftil to Academician V Ye. Lashkar ov for'valuable rawks." Orig. art. has S -
6 figures,, formulas., and 1 table-
ASWC=014 Instybut naptyprovi&Wkiv AN UkrSSR,Kiev (InstitutA.:6t,-~Semiconductoras
A14 UkrSSR)
Card 2/4
Y
_2

L 3352-66 e7 1'/F,-.'T m'/T/E,.'F(t)/94P(b 12DIA (c IJP~c) JD/HV7/GG
'ACCESSION NR: APS013482
UR/0185/65/010/005/057210573
1AUTHOR: Ayvazov, V. Ya.; Holynnaya, H.-I..; Sheynkma% M. X...e
~TITLE: The effect of alloying surface monoci stals~of CdS with admixtures of
1groups III and VIII, upon the spectral characteristics of photoconductivity
:SOURCE: Ukrayinslkyy fizychnyy zhurnal, v. 10, no. 5, 1965, 572-573
~TOPIC TAGS: co a 0 ontal c
b IJ-115 ( ning alloy, aluminum/~Iontaining alloy, indium containing
lalloy, luminescent crystal
iABSTRACT: The authors studieAWS'lEgSrystals in the form of mirror-smooth films
'of average dimensions 2 x 4 x 0.01 cm, obtained by the synthesis method from the
vapor phase with various admixtures were applied to their surfaces. The admixtures!
!chosen were In, Ga and Al of group III, and Fe, Ni and Co of group VIII; the formerf
bare readily ionizable donors in CdS, the latter greatly alter the luminescence of
ZnS-CdS, phosphor crystals and eliminate photoconductivity in the long-wave ranges
The admixtures were applied by evaporation in a high vacuum, so that several mono--,,
atomic layers were built up. one portion of the crystals was not subjected to fur-1
time
ther treatment (surface alloying), the other was placed in a vacuum for a short
Card 1/5

L 3152-66
4CCESSION NR: AP5013482
(near=surface alloying). For the first group of additives, annealing was continuedi
I
for 2-3 minutes at temperatures of 240-260OC; in the second group it was continued
!for 5-6 minutes at 130-.1500C4 Orig. art. has: 3 figures.
JASSOCIATION: Instytut Napivprovidny1civ AN URSR, Kiev (Institute of Semiconductors 11
4
JAN-URSR) q
SUBHITTED: 30Jan65 ENCL: 03 SUB CODE: SS
NO REF SOV: 009 OTHER: 002
lCard 2/5

-Mum--
t 3352-66
ACCESSION KR: APS013482

.-V
3352- 6
ACCESSION
NR: AP5013482
V
V
jCard 4/5
SURE: 02
ENCLO
rig. 2. Spectral characteris-
tics of I (X), -r(A) relaxation
time and Gf(l) (phenomological
quantum yield), before (curve
and after (curve II) alloying
the surface of the CdS mono-
crystal with Fe (with annealing)j
:j
Wavelength is plotted an the X-
axis in microns, relaxation timej
e scale'
on the righr-hand ordinat
in.microseconds.~
AAII~

.L 64309-65
ACCESSION NR: AP5012762
able to determine the crosssection for the capture-of electrons. 3Y--
the recombination centers., and to determine the cross section.for;--l-'~-_
the capture of an infrared photon by a slow-recombination r-canter.
The theory of the phenomenon is discussed briefly. Pulses of 2.5.
~Lsec from an infrared lamp (0.93 P. wavelength) were.u--sed. The cross
section for the capture of an infrareds photon,by the. r-level was
found to be 0.8 x 10-16 -2
Cm 49 which is.of the same orde.r.as the gec,
metrical dimension of the atom. The-probabilities:for electron cap-
ture by s-centers and r-centers were found to be (4--20) x 10-101andl.-~',
(3 10-13 3/sec, the latter being close to those obtained by J.-.
--5) x CM
the authors by another method earlier (jFiz. tverd. t6la .,V. 51- 367,1 11--'--
1963). Orig. art. has: 2 figures.
ASSOCIATION: Institut poluprovadnikov.Akademii.nauk U.krSSR (Insti-~
tute of'Semiconductors, Academy of Sciences,UkrSSR)-
SUBMITTED: 1lDec64 ENCL:i -00- -SUB-CODE 4 sop-7
NR REF SOV.-i 003 OTHER: 00 2
Card 2/2 ke-

L 1561-66 &iT(1'/W(m)/T/EWP(t)/EWP(b)/EWA(c) IJP(c) GO/JD
!ACCESSION NR: AP5018642 UR/0185/65~F/007/0808/08
,AUTHORS: Halushka., 0. P.; YermoloyMch, I. BA Korsunstka, _K. Ye;
,Konozenko, 1. D.- Sheynkman, M. K.,, < e~ r~
-7-
;TITLE: Some properties of CdS singl enLetals grown by zone sub-
;lumation
!SOURCE: UkrayinB'kyy fizyabnyy zburnal, v. 10, n6. 70 196-15-11 808-809
ITOPIC TAGS: cadmium sulfide~7optio-aotivity, activated crystal,,
isingle crystal Frowi g-,-e-le-otron trapping., recombination luminescence.&~,.
'luminescence quenching
tABSTRACT: The mobility measurements of majority carriers and activa-,~..-,,..
Ition energies of trapping levels, the infrared quenching of the photo-
Jourrent, the conceftration of slow recombination r-centers and theIr.'.
electron capture cross section were investigated in single crystal
i
of CdS obtained by zone sublimation, The crystals were out from a
(1010).and (1120)_Plailes
ilarge single crystal parallel to the In the.
Card

L 1561.&
ACCESSION NR: AP5018642
S~olutioa.
Torm of parallelepipeds and polished with an etobing
The
mobility of the majority carriers was measured.witb the aid of the
Hall effect in light and darkness from 100 tQ 50 K. At room temper-
ature the mobility varied between 70--320 cm?~V_sea for different
.samples, there being as a rule no difference between measurements unde
illumination and in darkness. With decreasing temperature the mobil-
ity increased initially. After that the mobility changed little with
:temperature. At about 220--250K the curves of the teuperature depend-
ence of the mobility under illumination and in darkness coalesce. At
1ow temperatures the mobility is lower under illumination.' This is..".-.
'apparently connected with the appreciable scattering by ionized im-~ -~l
pur1ties and mteroinhomogeneities. The occupancy of the centers
changes upon illumination. The thermalr stimulated conductivity was
also measured. In thicksingle crystals trappinj~-levels were found
and '42--0..46 eV and concentra-
with activation,gnergies Q.1 1;-O-11~ 0.
.tions of 8 x 101-;' and 3 x 10 cm The filling of these centers
with electrons on lowering the temperature affected the mobility. The
concentration of deep recombination levels and their electron capture-
Oross section was measured by the metbod.of lightAshook.' . The
Card

L 1561-66
ACCESSION NR: AP5018642
14 14
concentrations were found tobe. 4 x 10 8 x 10 cm The electral,
capture cross sections of these recombination.centerd, determined from
the Infrared pbotocurrent quenching spectra exhibited two maxima,(at.
1.5 and 0.9 eV). The spectra were sbifted somewbat towards shorter
wavelengths. The slow recombination r-centers are apparently the saw
in thick as in tbin CdS crystals. Orig. article has:. 2 figures.
ASSOCIATION: Instytut fizyky AN URSR (Institut fiziki AN UkrSSR]
Institute of PbysicsjAN Ukrs.13R);?t~,Inst tut napivorpvidnykiv AN URSR,
r "i (Institute of Semicondu ctors,
Kiev [Institi;t pqluprovodnijccv AN Uk SSR
W~' UkrSSR)
,SUBMITTED: 24Mar65 ENCL: 00 SUB -OODE.* -ss op
REF SOV: 003 OTHER' 002
i Card 313

SWI
10577-66 EWT (d)/E%IT (I )/EwT (m
T 3P 4QF t A= )/F-PF (n)-2/EWP (t)/EWP(b)/E`XA (m)-2 IJP(c)
473-1
ACC NRz APS025407 SOURCE CODE: UR/018I.X9T061/61-61 3136
UU, -5~ - -
,4
AUTHOR: Sheynkman, M. K.;.,Gorodetskiyl,' I. Ya.; Yermolovich, I~ B.
V I/ , y-,j- 14,
ORG: Institute of Semiconductors AN UkrSSR, Kiev (Institut poluprovodnikov AN UkrSS_
A/1 4 Y1 1~
TITLE: Effect of temperatu on the cross sections for capture of electrons by re-;:'
combination centers in CdS and CdSe
,Vj 0
SOURCE: Fizika tverdogo tela, v. 7, no. 10, 1965, 3134-3136
TOPIC TAGS: cadmium sulfide, cadmium selenide, single crystal, semiconductor re-
search, capture cross section, photoelectric propefty
ABSTRACT: Three recently proposed methods are used for studying the relationships be-
tween temperature and the cross sections for capture of electrons by r-centers and
various e-centers in CdS and CdSe single crystals in the 110-3300K temperature range.
The methods used are based on a study of the photocurrent kinetics when the crystals
are illuminated: a) by a powerful shoft pulse of light--the "luminous shock".method;
b) by constant radiation and a weak pulse of stimulating light--the "natural pulse",
method; c) by constant illumination and a weak pulse of infrared light which quenches-
the photocurrent--the 11IR pulse" method. The "light shock" and "natural pulse" me-
thods were used for measuring the cross sections for capture by r-centers. Both
methods gave extremely close values for S r. The values of S 8(T) were determined by
Card 1/2

L 10577-66
ACC NR, AP5025407
the "natuval pulse" method. High-resistance undoped photosensitive single crystal 113
of cadmium sulfide and cadmium selenide were studied. The cross sections for capt
by various r-centers in these crystals are extremely weakly dependent on temperature
The values of Sa are also only slightly sensitive to temperature near 1100K; however
a further increase in temperature results in an exponential increase in S a(T) with
an activation energy lying between 0.1 and 0.2 ev for various a-centers in US and
CdSe. This increase in Sa(T) starts long before the beginning of temperature quench.-
Ing of photocurrent in these crystals. A theoretical model Is proposed to explain
the relationship between temperature and the capture cross section. The authors
thank V. Ye. Lashkarev for valuable consultation. Orig..art. has: 1 figure.
fV,
SUB CODE: 20/ SUBM DATE: 23Mqy65/ ORIG RZF: OlS/1 OTH IREF: 004
02/2
Card

10778-66 ENT (1)/EWr (m)/EWP(t)ALW(b) -IJP(c) -JD/AT
ACC NR. APS028925 SOURCE CODE: UR/0185/65/010/011/1263/1265,
AUTHOR: Ho!vi~~a, H. I.; Sheynkman, M. K.
.. I/ 9t, S~- 1149 .
ORG: Institute of S~mlconductorj. AN UkrSSR, lGe (Instytut napivprovidnykiv AN URSR)
TITLE: Effect of doping with group I elements on the spectral photoconductivity
characteristics of cadmium sulf de
SOURCE: Ukrayins1kyy fizychnyy zhurnal, v. 10, no. 11, 1965, 1263-1265
TOPIC TAGS: cadmium sulfide, copper, gold, silver, photoconductivity. crystal property
14/1 Vit
ABSTRACT: In this work the effect of CU-, d M cl the otoelectric properties 01
-dff ated accepto
CdS crystals was Investigated. 7hese additives, pro ae in Cd3 Oeeply se r
levels which serve as, recombination centers. The surface of 2x 0- 0- 1 c-M3 single crystals
of CdS was alloyed with Cu, Ag. or Au by evaporation of these metals In a high vacuum In
the amount which would produce several monolayers. The deposited metal film had
practically no effect on the dark current. Some of the specimens were not further treated,
whereas others were heat treated in a high vacuum over a short period of time. .-The,heating
time was 30 see at 130-150C for Cu. and Au and at 200C for Ag. The alloyed layer, calculated
on the basis of the diffusion coefficient, was about 0. 15 mIcr6ns thick. The measurementit
of stationary photocurrent 10 andphotocurrent relaxationAtmeT101were madeutore aid:,"
afteralloying. Rio shown that alloying lowers the photocurrent In a shortwave part iouthe
spectrum. Authors express their gratitude to Academician AN UkrSSR V. *E-. UshkWov,
cardl/2