SCIENTIFIC ABSTRACT SHASHKOV, V.S. - SHASHKOV, YU. M.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001548710003-2
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 99
• Document Creation Date: November 2, 2016
• Document Release Date: August 9, 2001
• Sequence Number: 3
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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RAZGOVORUJ, B.L.; MMOZOV, V.S.;. SHASHKOV V .; ANTIPOV, V.V.; DOFROV,
) Y.-�
N.N.; KONNOVA, N.I.; LIVOV7C71--~-.; SAKSONOV, P.P.
Effect of screening of separate parts of the an-JImal body cn
the change in radiation reaction following action of gamma
rays and hilgh-energy protons. Probl. kosm. biol. 4:411-429 165.
OMITRA 19-9)

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MROZOV, - ",'.S.; h.,T.; V.V., 3AKSONOV,
F.P.; LOF-1-lov, N.N.
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708 '65. (MT_P.A 18:9)

L 14290-66 EWT(m)/EPF(n)-2/FCC/T IJP(a) GG/RD
ACC NR; AT6003874 SOURCE CODE:
AUTHOR: Shashkov, V. S.; Morozov, V. S.
ORG: none
TITLE: Injurious effect of 660- and 120-mev protons and the efficacy of
pharmacological and chemical protection
SOURCE: AN SSSR. Otdeleniye biologicheskikh nauk. F~,oblemy kos-Mcheskoy
biologii, v- 4, 1965, 401-410
TOPIC TAGS: proton, biologic radiation effect, radiation protection, riouse,
RBE, cobalt, radioisotope, gawina irradiation, antiradiation drug
ABSTRACT: Efforts continue to partially estimate the biologi6al effects of cosmic
radiation by determining the RLBE of high-energy protons. In this work
male white mice weighing 18-21 g were subjected to Co6o.gamma-rays
(dose power, 264 rad/min) and 120- and 660-Mev protons (dose power,
500- 700 rad). The experiments were also designed to tost chemical
agents with a known radioprotective effect against x-rays and gamma-r ays
during proton irradiation. The animals were irradiated.-in plastic chambers
Card 113
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ACC PR: AT6003874
in groups of 10-5 controls and 5 protected mice. The LD50/30 for Co60
gamma-rays was calculated to be 600 rad, and for 660-Mev protons,
900 rad. Thus, the RBE of 660-Mev protons, according to the LDM
index, is 0. 73. The comparative radioprotective effect of various sub-
stances was inve stigated in experiments, the results of -~Aihlch are shown
in the following t able.
C060 gamma-irradiation Irradiation with 660-Hev Irradiation with 120-
in dose of 850 r protons in dose of
) 1170 + 150
(Dl
d (DL Mev protons in doses of
D
1200 1
)
ra
,,,
lOO/
Number ~01lumber alive Humbe-r of Number .3A(vji L
) rad (
L,100)
Number
Number al ve
Preparat~ion
. -of mice 'by 30th day mice by 30th day I
mice
by 30th day
Cy.~amine
. 40 22 80 41 .
40 24
__AET
% 40 30 60 49 40 30
-Serotonin 40 24 30 is 40 22
-5-methoxytryptamin e 40 28 30 21 40 28
Tr ptamine
Y 20 8 20 5 - -
5-hydroxytryptophar 20 8 20 4 - -
Control 40 0 160 3 60 2
-Biological coqrol 20 20 60 59 20 20
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both ~60- and 120-
Experimental results showed Viat the RBE of Mev.\IJ
protons for mice, as co-rnpared with electromagnetic radiation, does not
exceed 1. Furthermore, the known radioprotective substances retain
-their effectiveness durina irradiation with 'iigh-energy protons.- The authors
bxpress thanks_1~6__do_rre~_j~n_Lng 'M-e'm-ber of the Academy of Sciences, SSSR,
D. I. Blokhintsev. Director OIYaI. Further thanks is extended to Profes or
Dzhelenov, Director of-E-he--aboratory of Huclear Problems OIYaI,
for making possible the research work wituh proton's. Orig. art. has:
4 tables. [ATD FRESS: 4091-F]
SUB CODE: 06 SUBM DATE: none ORIG REF: 019 OTH REF: 021
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L 14291-66 EWT(m)/ETC(F)/EPF(n)-2/EWG(m) GG/RD
ACC NR: AT6003875 SOURCE CODE: UR/2665/65/004/009/0411/0429
AUTHOR: Razgovorov, B. L.- Morozov V. S.-I Shashkov V. S.- Antipov, V. V.;
---t - - N
Dobrov, N. N ; Konnova,__r. �aksonoLvL_r_._
ORG: none
TITLE: Effect of screening individual parts of the body of animals on changes
in radiation reaction on exposure to gamma rays and high-energy protons
SOURCE: AN SSSR. Otdeleniye biologicheskikh nauk. Problemy kosmicheskoy
biologii, v- 4, 19651 411-429
TOPIC TAGS: radiation shielding, RBE, rat, animal physiology, gamma irradiation,
cobalt, radioisotope, proton, irradiation, radiation biologic effect
ABSTRACT: Previous experi~nents showed that screenine of individual organs or
parts of the body during large doses of x-rays or gamma rays can change
both the degree of radiation sickness and the uumber of deaths. In this
r
work experiments were conducted to determine the effect of screening /9~
durinFt irradiation -..of animals with gamma rays and 120-Mev protons.
White rats of both sexes were used. C060 gamma irradiation with dose
power of 15. 5 r /min was used. Proton. irradiatiorl was conducted throu'gh
Card 1A

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fiP.C NR: AT60D3875
lead-shielded pol.jethylene blocks to lower the dose (dose power 60 1-0
rad/min). During gamma irradiation, parts of the body were -screened
with steel plates (15 cm thic k) of different widths. Plexiglas blocks
12-15 cm thick, which almost completely blocked the proton flux from the
screened part, served as shields during proton irradiafi6n. The biological
effect of radiation under these conditions was determined by the survival
rate of animals during a 30-day period after irradiation. Localized
shielding during gamma irradiation of rats in a dose of 930 rad produceda
definite increase in the survival rate, which was most effective during
screening of the abdomen (8076 survival rate as compared with 616 in the
control). It was concluded that screening of the abdomen lowers the mortality
index to the greatest degree and also is most effective in easing the course
of radiation sickness and lessening the degree of-leukopenia.
In a secona *series of experiments, the abdomens of rats-were shielde'd
with plexiglas blocks of different widths during irradiation with protons in
the following dose ranges: 800- 1050 rad and 1100-1300 rad, and with
gamma rays in doses of 930, 1100, and 1400 rad. It was found that screen-
ing the abdomen with a block 6 cin wide during proton irradiation with
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800- 1050 rad increased the survival rate to 86.4% (as compared with
19. 476 in the control). A high survival rate (96. 7-100%) was also observed
when the abdomen was screened with blocks of various widths during gamma
irradiation (930 rad). Screening of the abdomen dur'ing proton irradiation
also prevented the development of severe gastrointestinal disease in many
cases and caused rats to lose less weight. Experimental animals re-
covered weight more quickly and even exceeded initial weight ievels.
Weight changes during gamma irradiation followed the same pattern.
Preliminary experiments were also conducted to show the effect of
screening under the combined influence of proton's and acceleration or
vibration. Results showed that neither 30 min of acceleration (10g) nor
I hr of vibration (700 cps, amplitude 0. 005 min) altered the effectiveness
of screening during proton irradiation (doses 750- 1100 rad and 1050-
1300 rad, respectively). Furthermore, it was found that the effectiveness
of screening the abdomen increases with incr6ased'radiation dose. There
is not yet any adequate explanation of the screening effect although it may
be connected with.retention by the organism of undamaged tissue sections.
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Orig. art. has: 5 figures and 4 tables. [ATD PRESS: 4091-F]
suB coDE: o6 suBm DATE: none ORIG REF: Oil OTH REF. 010
Card 4A

L 14292-66 E-WT(m)1EPF(n)_2 GG/RD
ACC NR: AT6003876 SOURCE CODE: UR/2865165/004/000/0430/0436
AUTHCH: Gaydamakin, N. A.; Petrukhin,.V. G.; Shashkov, V. S. Antipov, V. V,; 51,
Saksonov.--Pl. P.
ORG: none
TITLE: Morphological changes in the hematopoietic organs of mice after
irradiation with high-energy protons 19, VY,
SOURCE: AN SSSR. Otdeleniye biologicheskikh nauk. Problemy kosmicheskoy biologii"
v. 4, 1965, 430-436
TOPIC TAGS: proton,, hematopiesis, RBE, morphology, irradiation, mouse, gaama
irradiation., cobalt, radioisotope, ionizing irradiation, radiation biologic effect,
ABSTRACT: Pathological changes in the morphology of the hematopoietic organs'of
inale mice were studied after proton and gamma- irradiation. Some animals
were subjected once to proton irradiation (dose, 830 rad; dose power, 400-
600 rad/.nin), and others were irradiated froai a C060-source (dose, 650 r;
dose power, 273 r/inin). Control animals were not irradiated. The mice
were killed with ether 3, 7, 15, 30, and 60 days after irradiation, and
cells of the spleen thymus gland, and bone marrow of the femur were-
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L 1429z-66
ACC MR: AT6003876
exai sickness
nined microscopically. In animals that died from raJiation
(9-12 days after irradiation), hemorrhages in the lungs and intestine were
frequently observed. Comparison of the weight coefficients of the spleen
and Ciymus (both showing a two-phaqe increase) did not reveal any
statistically reliable differences in the effects of the two type
s of
irradiation on these organs. Observation of animals and comparative
study of heniatopoietic organs show V-iat changes due to irradiation with
protons and gamma-rays are similar. In the first few days after irradf-
ation, the volume of follicles in the spleen decreased, and areas of
myelopoiesis disappeared from the pulp. In the thymus gland, depletion
of the cortical substance of lymphocytes was observed, and in the bone
marrow destruction of the reticular stroma occurred. It must be noted
that changes were less severe during irradiation with protons than with
gamma-rays. However, complete recovery of the spleen did not occur in
either case b the 60th day after irradiation. In general, it -was conclud e'd
y
that restorative processes in all three structures studied proceeded more
s'. awly in the gamma- irradiated animals. Previous- experiments have
also shown that there are no noticeable differences in the morphological
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ACC NR: AT6003876
.reactions of animals to different types of ionizing radiation. The degree of
affliction, however, depends on the physical nature of the form- of
tadiation, and doses vary. Orig. art. has: 1 table. [AtD PFT~SS: 4091-F]
SUB CODE: 06 DATE: none ORIG RIEF: 013 OTH REF: 004
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L 111252-66 P'SS-2/C-'vjT(1)/FS(s)/EiP(r~i)/P-S(v)-3/EEIC(k)-2/FCC/EW,'L(h) SGTB TT~IM/IRD/GW
ACC NR: AT6003911 SOURCE CODEt UR/286-5/65/004/000/0701/0708
AUTHOR: Morosov, V. S.; Sha5kkov, Vc-Se; DS30doy, B.-T,&; Antl2gyja
;br
Saksonov. Pe P.; D ov. Ns
ORG: none
TITIZ: Modeling of radiation conditions on a circum1unar trajectory during a
solar flare
SOURCE- AN SSSR. Otdelenlye biologicheskil& nauk. ProbleiV kosadcheskoy
biologii, v, 4,A701-708
TOPIC TAGS: space flight sin2lation, mouse, radiation protection, lunar flight,
radiation biologic effeet, biologic acceleration effect, solar flare, garma
irradiation, lunar trajector7, radiation belt, antiradiation drug
ABSTRACT: The po.~sibility of modeling the biological effect of
radiation on a
-..-lunar flight which includes a short solar flare was demonstrated. White I
mice fed a special food concentration and kept in a biological unit were
subjected to gamma -irradiation. Acute irradiation of other animals was
conducted in plexiglas cages. In all cases the radiation dose was
!-Card 1/3 - -----

142.C,2-66-
Acc NR: AT6oo393a-------.------
;2
900-920 r. Dose power during acute irradiation was 18 r/min and dur-
ing "solar flare" a maximum of 2.5 r/min (duration of flare, 24 hr). On~
the simulated lunar trajectory, the animals received a dose of 60--80 r i
*"radiation belts. " Before the solar flare, the
while passing through the
mice were injected with the following radioprotective agents: cystamine
dihydro chloride, AET, and 5-methoxytryptamine hydrochlorid&.'/L/
The experimental results showed that the effects of this pharmaco-
logical protection were slight as compared with unprotected animals.
AET was the most effective radioprotective agent during both "lunar
flight" and acute irradiation. On the lunar flight the animals were sub-
jected to an acceleration of 20 g for 5 min before irradiation and at the
end of the flight. It is suggested that the observed lowering of' thebio-
logical effect of radiation during lunar flight (only 3376 of the mice died,
-as against 90% after acute irradiation) is due not only to the lowered dose
power, but also to acceleration. It is known that acceleration can alter
the reactivity of an animal to subsequent irradiation. Previous experi-
ments also suggest that preliminary irradiation of 60 r (in the radiation
Card

L :Lh252-66
ACC IM.- AT6003931
belts) reduced the effectiveness of the subsequent high dose during solar flare.
It was concluded that modeling of radiation conditions for arV spaceflight
trajectory should be possibleo Orig, arte hass 2 figures and 3 tables,
'A-;J) PRESS: 4091-_F7
I
SUB COM 06 SUEM DATE: none O'Rlrj REFi Oo6 oTH RzF: oo6
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_L_1An01_,66 i ) hur (m) ZECr /EwA (h SC_TB___ZP/C-'a_
C MR: AP600-t(52 SOURC8 CODF: LM/0293/66/ooh/001/0172/0174
AUrHOR: Morozov, V. S. S~_!-~O=V:!-' Davydov, B,. I
ORG: none
TITLE: Modeling the biological effect of a depth dose from a monoenergetic proton
flux k
SOURCE: Kosmicheskiye issledovaniya, v. 4, no. 1, 1966, 172-174
TOPIC TAGS: corpuscular radiation, radiation effec-t, RBE, high energy proton
ABSTRACT: Previous experiments suggested that physical protection (shielding) somee-
times aggravates the,effect of corpus cular radiation~~on living organisms. Unlike
electromagnetic radiation, heavy particles creatte a higher ionization density along
their path and at the end of their penetration (i.e., linear energy losses increase
with decrease in particle velocity, and RBE likewise increases). Thus, corpuscular
radiation can have a widely varying biological effect on different parts of an
organism. Experiments were conducted to trace the change in biological effectiveness
of particles during their passage through tissue until they were stopped. Mice were
placed in rows perpendicular -to the axis of a monochromatic beam of 120-Mev protons.
Animals were irradiated with a dose of 1600 rad (dose power, 50 rad/min from a
synchro cyclotron). One group of animals received an intraperitoneal injection of the
UDC: 629.198.621
Card 1/2

ACC NR:
antiradiation agent AET (dose, 150 mg/kg) 15-20 min before irradiation.
Cd
Pq
The survival!,
Fig. 1-Survival percentage of irradiated
animals depending on the rov occupied
1 Control; 2 AFT.
Row of animals
percentage and average length of life of animals caring within. 30 days were determin-
ed (see Fig. 1). It should be noted that AET had no protective effect in the
3rd-4th row. Orig. art. has: 3 figures and 1 table,
suB com o6/ SUBM DATE: 230ct~65/ OFIG REP: 003/ OTH REP: 003/ ATD PRESS:
y2.1-3

C,

L 4:~597o-oo -';'NT (I )I EVV (M)/FCC/ EWA k h) SCTB DD/RD/GW
-ACC N'. AT6003847 SOURCE CODE: UR/2865/65/004/000/0119/0126
.7
.-AUTHOR: Sakso ov,-.P, PP; Antipov, V,. 3E.;' Dobrov. N. N ; Shaahka, M. .-a
Kozloy, V. A.; Parshin-, Vi S.;,Davydov, B;~ I Raggovorov, B,. L,;
V. S.; Nikitin. M, D
TITLE: Perspectivos of pharmecochomical protection from radioactive
_A2A9p_e during cosmic fligbts
SOURCE: AN SSSR. Otdeleniye biologicheskikb nauk. Problemy
kosmicbeskoy biologii, v. 4, 1965, 119-126
TOPIC TAGS: astronaut, space medicine, radiation biologic effect#
antiradiation drug biologic acceleration affect, M13LL4A,, a4iu GY1;_Vr4X1
All~ P A.'~&~j A6000~j A ) Arll~
Sjd
Alc~: T e authors cons der cosmic radio
ABSTR' tion a real danger for
astronauts, particularly during long flights. The work is a survey on
existing radloprotectors and a general discussion of biologic conditions
in cosmic flight, future research, and requirements for radioprotectors,
The present chemical compounds, Mercernine HCL, its salicylate and
disulfide, and AET appear sufficiently effective for clinical use ageins
Card

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X or Eamma rays. Laboratory tests on mice sbowed that some compounds of
the 9minotbiol series (cystemine, cysteemine, serotoninm AET) exerted
significant protective effect in.proton irradiation of 600 and 120 Mov.
In the search for radioprotectors, other factors affecting the astronaut
must also be taken into account, such as weightlessness,, vibration,
lacceleration and changes in pressure. Tests on laboratory animals
Isubjected to sucb conditions prior to irradiation showed no effect on
radiation sickness, but vibration after irradiation was apt to prolong
the sickness. Some of the radioprotectors tested in nice and dogs bad
~an adverse effect on stability of the -organism under vibration and
acceleration. The authors call for studies to establisb a stable
ecologic system in the cabin which can accompany the astronaut on long
trips, for models simulating cosmic flight conditions particularly in
regard to radiation dose, and fbir radioprotective compounds to be
compatible witb.all,t.bese conditions. Orig. art. has: none*
SUB CODE: 06, SUBM..DATE:. none/ QRIG REF: ~-040/ OTH REP: 028
iCard _.2/2

AT6036632 SOURCE CODE; UIR/0000166/000/000/0335/03~6
AdTIM: Saksonovs F* Po; Antipovs Ve V.; Dobrov* He No; Kbzlovp Va A**A Shashkov,
nonG
TITIE': Problems of pharmacochemical protection of the organism against ionizing,
radiation on spacoflights Cpaper presented at the Conference on Problems of Space
Medicine held in Moscow from 24-27 May 1966]
SO!-T:ZC,-:: Xonferentsiya po problemam kosmichaskoy meditsiny, 1966. Problemy
kosmichos'p-.0y meditsiny. (Problems of space medicine)-, materialy konferentail,
;.;~Scavj 1966, 335-336
4LOPIC Z~GS: racu'aclon protection, pharmacology, ionizi , radia. ion bio o
n7
offect, cosimic radiation biologic effect, life support: system, radlavlon toxerance,
space medicine
ABSTIACT:
Although soiric piiarniacochet-nical substances have a demonstrated
ability to increase the radioresistance of both humans and animals, they
~:cannot be used unconditionally in spaceflialit. Special features of the
cosmic radiation eflect which must be considered in the search for effectiVe
1/3

ACC NPt AI-W36632
work capacity evell briefly, and also must be available in convenient
nnedicinal iorm. in addition, radioprotectors used in spaceff-light must not
daraage the hereditary structures or disrupt tile physiological functions of
links in the spacecraft life--suDj)ort system,.
I 'C'"9 %* 22; ATD Report 66-1161
ISUB COM 06 SuBm DAIEs M~y66
Ccird 3/3

L. 2M4-056 -PwT(--1 -cCTB DD
ACC NR, AP6015411 SOURCE CODE:
AUTHOR: Gaydamakin, N. A.; Petrukhin
P. P...; S. asbkaA~-15-0-----.
ORG: none
TITLE: Patbomorpbological changes in
the combined' action of certain types
spaceflight factors
SOURCE: AN SSSR. Izvestiya. Seriya
346-354
~
UR/0216/66/000/003/0346/0354
V. G..; Antipov. V. V.; S
e.2
9
bematopoietic organs of mice during
of ionizing radiation and dynamic
biologicbeskaye, no- 3, 1966,
TOPIC TAGS: mousep biologic acceleration effect, biologic
vibration effects radiation biologic effect, bematopoiesis, bone marrow,
radiation injury, synergy
ABSTRACT: The synergistic effect of ionizing radiation and vibration or
transverse acceleration on the spleen and bone marrow was investigated
in 9 series of experiments on 245 male mice. In the lst and 2nd series
experimental anima-Is were exposed to a 1-11r vibration (70 CPS) period.
1 or 3 days before proton irradiation with a 830 to 875 rad dose. In
the 3rd and 4tb series experimental animals were exposed to the same
vibration period 3 or 5 days following irradiation. In the 5tb series
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1; 28h44-66
ACC NRs AP6015411
experimental animals were exposed to the action of transverse
acceleration applied 10 times over a 30 min period 23 br before gamma
irradiation with a 700 r dose, and in the 6tb series the transverse
acceleration action was applied 24 br following irradiation. The 7tb,
8th and 9tb series.served as controls. Animals were observed over 9-60-
day period to determine patbomorpbological changes of the spleen and
bone marrow by microscopic investigation. Study date'sbow that the
combined action of ionizing radiation and vibration or'transverse
acceleration markedly changes the degree and nature of patbomorpbological
shifts In - bematopoletic organs. Exposure to vibration 3 days
and particularly 1 day prior, to irradiation intensified the depletion
of , spleen and bone marrow and accelerated the restoration of all the
bematopoleti-le processes. The effect of vibration applied 3 days and
patticularly, 5 days after irradiation markedly increased destructive
changes; during the recovery period necrotic foci appeared In the bone
marrow and spleen, and reparative processes were prolonged. Transverse
acceleration applied' 24 br. prior to gamma irradiation reduced depletion
of the hematopoietic organs and accelerated their reparation.
Transverse acceleration applied 24 br after irradiation did not affect
radiation injuries of the bematopoietic organs. Orig. art. has: 6
figures, (06]
SUB CODE: 06/ SUBM. DATE: none/ ORIG REF: 020 ATD PHSS:,~-J06

L 7,4q?5_66 E"Tl,i i
ACC NRI AP6019602 SOURCE COPE: UR/0293/66/004(/003/0482/0491
AUT110R. 2ayy4ov B Antipov. V. V.; 1~0;qov, V. Saksonov, F.
~hashkov, V. S.
ORG: none
TITLE: The problem of using radioprotective pharmacological agents under spaceflight
conditions
SOURCE: Kosmicheskiye issledovaniye, v. 4, no. 3, 1966, 482-491
TOPTC TAGS: manned spaceflight, radiation protection, cystamine,
meLhoxytrypLamine, acceleration, animal physiology
ABSTRAur: In tests on mice (exposed three times to 44.4 G, 1.4 G/sec accelera-
tions, with 5 min per exposure and 5 min between exposures on a centrifuge with a
4.25 m arm length) and guinea pigs (exposed twice to 22.0 G, 0.7 G/sec with 5 min
between exposures), lowered resistance to acceleration was noted after injections
of cystamine (80-150 mg/kg), AET.(15-150 mg/kg), 5-methoxytryptamine (75 mg/kg),
seroLonin (50 mg/kg), and aminazine (1-10 mg/kg). A change in resistance after
injections of phenatine (2-10 mg/kg) and strychnine (0.05 mg/kg) was insignificant.
Thirty min after the combined injection of phen~tine (5-10 mg), strychnine
(0.5-1.0 mg), and aminazine (2.5 mg), the EKG's and respiration of dogs exposed to
6-8 G (0.2-0.3 G/sec.) did not differ from those of control centrifuged animals.
Card- izz___ UDC: 615.7.035.1:614.

L 34975-66
CC NR~ AP6019602
It was ccncluded that extreme caution should be exercised in recommending radio-
protectors, expecially AET, cystamine, and 5-metho-cytryptamine, for use on space-
flights. The authors thank S. N. Komarov for his active participation in the study.
Orig. art. has: 5 figures and 3 tables. [CD1
SUB CODE: o6,22/ SUBM DATE: 28Feb66/ ORIG REF: 017/ OTH REF: 013/ ATD PRESS:
Card 2/2 JS

SPASHKOVVY.S.; FEDMIYEV~ I.M.., BURKOVSKAYA, T.Ye.; SAKSONOV, P.P.; ANT1POV, V.V.;
YFVDOXIMOII, Yu. N.
Study of the radloprotective activitv of Bomp newly synthesi2ed
thiazoline derivatives. Radiobiologit 4 no.6:927 164. (KRA 18:7)
1. Moskovskiy gosudArstvennyy universitet im. M.V.Lomonosova,
khimicheskiy fakulltet.

1. SHASHKOV, YE. P.
2. SSSR (600)
4. Furnaces
7. Lining pyrite furnaces of the "GO type.
Bum. prom. 27 No. 9, 1952
9. M nthly List of Russian Accessions, Library of Congress, February -1953. Unclas3ified.

LISSR/Metallurgy Pyrorae-try, Optical Mar 52
Methods
IlEffect of the Surface Roughness and Film of Solid
and Liquid Metals on the Precision of Temperature
Measurement by Optical Methods," B. V. Stark, Corr
Mem Acad Sci USSR; Yu. M. Shashkov
"I% Ak Nauk SSSR, Otdel Tekh Nauk" No 3, PP 395-404
Develops formula for determining film transparency,
i.e,, thickness of oxide film within which emission
of metal covered with film depends on the film
thickness, Establishes that neither monochromatic
nor polychromatic pyrometers provide for precise
7244T77
temp measurement of metals, cavered with films bav-
ing smooth separation surfaces, in zone of trans-
parency. No precision ran be achieved also in case
of metals with rough surface and metals covered wit,~,
films having rough separation surface6, btil. In this
case monochromatic pyrometer provi-des fo-L hIgheV
precision,
-044T77

j V&j&". . , . 1.
SlTkRT ACAD. ml. V. YU 1V
Fusion
Refractometric method of investigating fusions. rok-1. AN SSba 85 no. 1, 1952.
Monthly List oll Russian Accessions, Ubrary of Uongress, November 1952. UNCIASSIFIED.

5, `T8
-,c)-

1 1.Z - ! / -58-5-9457
137
Translation from: Referativnyy zhurnal, Metallurgiya, 1958, Nr 5, p 92 ~USSR)
AUTHORS: Petrov, D. A. . Kekua, M. G. , Khvostikova, V. D. , Shashkov,
Yu.M., Suchkova, A.D.
TITLE Producing Single Crystals Of Silicon (0 POILIChenii mono-
kristallov kremniya)
PERIODICAL: V sb. : Vopr. metallurgii i fiz. poluprovodnikov. Moscow,
AN SSSR, 1957, pp 41-46
ABSTRACT: The production of single crystals of Si by drawing from a
melt and vertical floatina-zone refinina is described. Drawina
was performed in an apparatus consisting of 3 parts: a vacuum
circulation chamber connected with an evacuation system and
equipped with electrical leads and mechanism for raising and
rotating the crucible; a working chamber consisting of a metal
water-cooled cylinder with viewing window; and heads with a
mechanism for raising and rotating the seed crystal. The fusion
of the Si in a quartz crucible mounted on a graphite base was
done by a slit heater made of spectrally pure graphite, with
graphite screens around it. Smelting was in vacuum (10-4_10-5
Ca rd 1/2 rnm Hg). Si produced by the Beketov method was employed in

137-58-5-9457
Producing Single Crystals of Silicon
0
the drawing. After the Si %vas fused, a thermal regime that assured crystal-
Lization of the nielt from its center was chosen. The seed was immersed in
'the melt, and drawing began after it. was fused. Single crystals were obtained
after the material had been drawn 1, 2, or 3 times. It is noted that the pre-
sence of a film on the melt dnd poor contact between the seed crystal and the
melt may cause the crystal drawn to be a polycrystalline, Vertical floating-
zone refining was performed in an apparatus consisting of a vacuum chamber
in which a Si bar, produced by drawing. was mounted vertically. A Ta heater,
creating a zone of fusion within the specimen, moved along the specimen at a
rate of ru 2 mm/ /min. It was found that a given degree of quperheating of the
zone was a condition for the production of a single crystal by this method. In
a Polycrystalline specimen a monocrystalline portion was produced only after
several passes, while this was accomplished on the first pass when a mono-
crry:3talline seed crystal was employed. Single crystals of Si with resistivities
of 15-60 ohm/cm were produced on these apparatus.
2.. Single crystpis--Resistivity
.5ingle crystals--Growth
3
-a rd 2/2
"
I

T ra -is I at ori from- R~--Ierativnvy z1vrnal, Me'allu:60iya 1958 Nr 4 p ~)~- ~;USSR)
A6THORS: Petrov. D. A. Shaslikov, Yu. M. , Akimchenko, 1. P.
TITLE: Diffusion of Ant;mony and Germanium in SiLicon (Diiiuziy~ 5LAr
my ; german:y-i -,- kremnii)
PERIODICAL: V sb. : Vopr. metallurgii i fiz. poluprovodrilkov. Mn5cc--.v AN
SSSR, 1957. pp '. 30-13-'
ABSTRACT: The radioactive isotopes SbI24 and Ge7l were used to deter-
mine the coefficient cA diffusion D cA Sb and Ge in Si. Diffusvon
was performed ii large crystalline specimens hav:ng resisciv ,-
ties of tenths of an ohm/cm. These were of the p-type. cut trar.5-
versely from bars obtained by extraction from the melt by the
Chokhrallskiy method. A thin layer of Sbl~~4 and Ge71 was spr~yezf
on the specimens :in vacuum. Annealing was performed in qu-rtz
ampoules filled with Ar, these in turn being housed in evacuated
ampoules. The temperature of annealing was maintained to with-
in �5o. Distribution of the concentrations of the diffused elements
through the specimen was determined by the radioact.'vlty of the
abraded layer and the radioactivity of the specimen. It w~s iou-1d
Card 1 /2 that the DSb at 940-1300' cculd be described by the equation:

H7-i8-4-698?
DiffUSion of Antimony and Germanium in Silicon
0. 1 1., exp(-66, OOO/RT) CM21sec?-rid the DGe "t t[50-13500 by the equation:
6.26- 105 exp (-121, 820,/RT) cm-/sec.
Yu.Sh,
_L Aritintoriy--Cie.t-mariiuzi--Di-ffdsioii 2 Silicon-APDlications
Card 212

AUTHuRS: Pe-Grov, D.A. and Sheshkov, Yu. M. (Moscow). 24-5-12/25
TITLE: Device for growing crystals of high activity metals directly
from powder without a crucible. (Ustanovir-a dlya
bestigel',nogo vyrashchivaniya kristaliov vysokoaktivnykh
metallov neposredstvenno iz poroshka).
PERIODICAL:"Izvestiya Akademii Nauk, Otdeleniye Teidmicheskikh Nauk"
(Bulletin of the Ac.Sc., Technical Sciences Section),
1957, No.5, pp.102-103 (U.S.S.R.)
ABSTRACT- This paper was presented at the First All Union-Conference
on apparatus for semi-conductuor metallurgy held at the
institute of 1.1etallurgy, Ac.Sc. U.S.S.R. Institut Metallurgii
All SO-SR). The design is based on the principle proposed by
Verneuil, DI.A. in 1904 (1) for growing precious stones by
feeding material from the top onto a molten end of a seeding,
lowering the seeding away from -the heating zone at a speed
corresponding to the speed of feeding-in new material. A
sketch of the device is in Fi-.1. The melting of the
:,,,)p t2ad of tlie sj-Juciineii is effected directly by means of a
1111c 15 09ei' ',:4-0~'- Sucli hiji frequency heating excludes
b i 1 i -",II-U U-
s ot con--,On,&.~~or by the heating substance
Card 1/2 r::~es ni~~ce, to- instnce, in an a-nalogous device
b F. (2). A photo of the device
s ;),~~m i a wiiiis: F sh=3 a photo of a specimen

~'IIIVIIKOV,
Nekotorye voprosy zonnoy plavkj-.
report submitted for the 5th Physical Chemical Conference on
Steel Production.
Ali
vv
- . 2

SH~',.SF~'011, Yu..-'.
Zlektroprovodnosty titanosodenzhashchikh shlakov.
renort submitted for the 5th Pk),sical Chemical Conference on
Iteel Z"~oAuctiori.
~", ~ W , ::: ~~ 1.,;
i -;; 1. .. 'j - 9i ij I !:~

24(8) PHA32 I BOOK UPLOITATION SOV/211T
30vashchaniye po skaperimentalinoy tokhrLlk* I motodam ryackotompers-
turnykh looledoranly, 1956
Ikoperimentaltnays tokhniks I matodl loslodovanly pri vysokikh tem-
peraturakh; trudy soveshcha niya JExperimental Techniques and
Nothodo of Investigation at High Temperatures; Transactions or the
Coftforence an Experimental Techniques and Methods of Investigation
at High Temperatures) Moscow, AN SSSR, 1959. 789 P. (Series:
Akddemlya nauk SSSR. Inatttut metallurgli. Komlsslya po fLziko-
khimloh*s kin on novae prolzrodatya stall) 2,200 copies printed.
Ramp. Rd.: A.A. Samarin, Corresponding Member, USSR Academy or
Sciences; Rd. of Publishing House: A.L. Bankvitser.
PURPOSSr This book Is intended for metallurgists and metallurgical
engineers
COVUtAOEz This collection of scientific papers Is divided Into six
partas 1) thormodyywamic activity and kinetics of histh-tempera turd
processes 2) co titution dia studies 3) physical properties
of liquid notalarl.d slag. 4 1 r,,,, o hods and pro-
ow analytical m:t . I , us.tions.
duction of pure metals 5) pyrometry, and 6) g n ra
For more specific coverage, see Table or Contents.
-jh..hk.,, T..A. Method of Measuring Electrical Conductivity
Or_RFrt**-S-13M6 306

'Alkitin. Yu.P., and O.A. Yesin. Manaurement of Sxtrf&ce Charge
Density of Liquid Metal in Contact With Slag 313
N*k;;;ndzl, Yu.A.. and A.M. iaizarin. U-Shap.d Test Specimen
for Determining Fluidity of Alloys 318
01,8h;;'j.h, A.G., and YU.A. Nekhondzi. Solidification and
Related Phenomena se Functions or Phyalcochomical Constants
of Alloys 351
Bidulya,"P.M., and N.A. Trubitay'n. measurement or Linear
Shrinkage and Resistance to Hot-Crack Formation in Steel 367
A versatile new Instr=ent wan developed for determining
free linear shrinkage# hindered (or retarded) shrinkage,
forces developing during hindered shrinkage, and realstan a
or the metal to the formation of hot cracks. By means of
this instrument It was shown that steel with a periteCtic
composition (about 0.2 percent C) exhibits maximum resistance
to the forration of hot cracks. This resistance falls
harply both with a decrease and an Increase in carbon

Ontent. But with an Increase the resistance falls only
:
until a content of 0.5 percent C has betn reached; with
greater amounts of carbon the resistance begins to rise
spin. The effect of manganese content and teeming tempera-
turd on hot-crack formation were also Investigated.
rranov, A.P. Investigation of the Properties of Steel in the
Liquid State and at the Temperature of Crystallization 384

Zratchikov, S.G., and V.V. Mikhaylov. Methods of Determining
the neat of Formation of Slag and the Heat or Evaporation of
Combined Water In Iron Oran 397
Cam 1V 31

PH,LU I BMK SIPWITATICS MV/1.966
S-hshmsly. po polup-,.4.1k.Tyu material- MO-O-1 1957
V.pramy -taill-gii i filiki P-lup-,odinikaw; t-dy 3-go ..... hh..iy..
(Pmhlmx in the Matsllu,rgy and Physic. of Transactions of
p. FrraLa slip
the ndrd Confers"-) H-fic-, led-,- AN SSSR, 1959. 129
Inserted. 3,200 copies printed.
Spons.ring Agency, Akd--IY- as-k S-11A. I..tLt.t ..t.11-git i-i
A. A. B&yk.,.. Rasp. Ed.. S. Kh. Abrik..ov, Doctor of Chemical
Ed . Or Publishing HO-1 P. F. Zolotov.
PWC~Us ThIs collection to intind-d for tachnical and scientific Personnel
come-zed Vth the In-Ittg4tion ,,, rroduntion of semiconductor material..
It smy also be -ad by td..t. I. Oh-1. of ..t.11-Ky.
WYERAGS, The collection contains reports submitted at the Third Confers-
an Seselcanducter Materials, hold at the Institute of Fot,llurg7 L-ni
B.'rk", AS U.%al, Moon-, 1. May 1957. 7h. report. d..1 J-.h pbl.-I
obtaining and to ... tig. I.g g.~Iuz, and .-io-d-t.r
Ai A; t
..". The collection ..8 first .11t.4 by D. A. P.tr.,, Doctor of
Tchldcal Sciancas. Rafrrances accompany no-It of the "Parts.
V. On the Problem of' the Role of' 5- factor. I. the
71"M V
GG-th P-0;S or Slagle Crystal. r- . vait 23
.1:1!2~ Br of H.I:.Z. as of DL-.d-Trp. Crystals
j n~,_. _t '. fti Li. at-. Th ry, 29
S319sti, Academician (AcAdeTI Of ;;dloncest Hungarian Peopl"'s R4publlc).
COMCernIng the P=blom of Sasle.mductor P.J~-.-C.Ot.tt. 40
Y.J-.ki of Basin T-1htd-I Problems, Polish Acad-1 of
~.pertlss of P-H junc-lons in G._nl_ Single _y,ts,
WitbtrarM rrtna the ?'..It by P~llls, AJ
Sos-kl L L. (Institute of physics. Polish A..d..y or Scl-,).
of KlnoriLy CurzdaL Carriers ca Light Re-
fl-ti.n FrOo, G.~lum 49
Is. K.S..ko, and U. 0. Mi..Ir~k. Dlffu.j.. and Saju_
ti 52
and V. A. F_~tQy. I .... t1g.ti.. of Moistening or
.With 57
or
b2
Trousil (Jaup-l-.ut. of Teshnjc~l Physics, A-d-Y Of
Sciences). Problem of Ob-.~I.Jg P- jilicon 66
P.tr-, 0. A.,
J. V. H..hd.1t1.n,k.y.,
7=1 =W-
___Ztchl~, or 5111c.. 51~gl.
69
Hmiung T.-hi.4c (Institute Of Applied Chin...
Republic I I.Pr--. or u3 Ing pu- far Vast,.* ng y, Z;_j
78
Ally,,. A. A. B-h.~~llj M
4~11 T__.. I no", .A~ 80
Ud. 1-Purn ii-o'la tj~. -phy- ,10At pmp.,.
G. A. A),h-d-1, A. 4- WIT", -0 Z. A. Alipra,..
COO the 134ffux on of dirialn Motals In poIycry.LftIIiag a,_Atoa 89
D-Iki-, D;s, . aad N. Kh. AbrikO,ov. Prabl- or Allaying 3calcon-
..... .- ----- - 94
7. D.
P=prtI.* ... -"a n , -U.-t or
Cry-" of GdS --Th I, Physical
1D7
A. P.' ad Erfan'. or and I.rt.la
D:rk
crystal. -Rost -Itail~"ra Wotov- I "v It' of Cdj JIngle
Of Ta,~h.lc.j Phy.l-, C_hu,jo,._~ A-1-7 of
"4M*s)- Semiconductor Coaroundm With an K~- Of one
of
pomants
117
Eff-t or C-diti.. an t" Xl`at1I--1 Properties
of Type A 11B C-pud.
;~I.HAjl
acva-. 'Frod"-.1n. DA Of N
sdcY
AVAILABLE$ Library or C..gra., 127
card 5/5

S01111 36- 59-3-12/2 1
LUTHORS: Shashkov Yu.M1. and Savitskiy, I.V.
TITLE: Horizontal Zone-ifieltinE, of' Silicon (Grorizontal"naya
zonnaya plavka kreii,,niya)
PERIODICAL: Tsvetnyye Metally, 1959, Nr 3, U-P 49 - 53 (USSR)
ABSTRACT: It is possible to obtain silicon with a high specific
resistance by horizontal zone-LaeltinE if the pu~_ity of
the quartz boat is high and there is no bcro-n In the
initial silicon. Ordinary apparatus canno~t-lbe used as
cracking of the silicon specimen occurs -whilst-- passi.-ag
a zone a-Long it and durin~3 cooling due to 16he difference
in the coefficients of ex~:,ansion for silicon and cuar+-z.
The present wor'K describes apparatus enables multi-ole
zone-melting of silicon in, a boat without crac';,,ing and
the construction of a boat vii-ich allows the -o
cool without crackin-. Ali Darts of the an~d ~he
C, I L -
silicon speciEen are maintained at a tlemperature h-ligher
than 80U-900 C similar to the method used by Taft a-nd
Horn (Ref 1). The whole apparatus is evacuated to
4
Cardi/3 10- mm Hg. It is shown 'In Figure 1, t1he mad-, parts
0eing: 1) the basic ~_.eater; 2) the

Horizontal Zone-melting of Silicon SOV/136-59-3-11-2/21
and, 3) the boat with the siliccra. The basic heater is
made of tantalum plate and is horse-shoe shaped "botzom
right-hand corner of Fi-ure 1). The speed of traverse olf
the boat can be varied from several hundredths to six mm
per minute. There is a transfer of mateEial to the last
zone; therefore, the boat is sloped 5-7 to the hori-
zontal. Cooling is carried out in one of the additional
heaters but even so cracking of the specimen could still
occur. This can be overcome by weakening the boat. Taft
did this by decreasing the wall thickness but the Dresent
authors produced the same effect by making sectional bc~ats
which enables free movement of the silicon specimen. The
absence of wetting of quartz by silicon and its high s-ar-face
tension prevent the siiiccn --t-cm, run-nin-S: between the
individual sections. Results showed that no transvefse
cracks occurred in the soecimen us-Mg thIs -orincii)'Le.
Longitudinal cracks were avoided by cutt-iinS all the sections
into two parts. In this way a whole spe,3imen without any
crac'Ks can be obtained. The ecti-c-ral boat -Urincirle could
be aDD_L'_i_-d ~Io other cases. T r i--
present case zre

Horizontal Zone-melting of Silicon SOV/136-59-3-12/2i
resistance of silicon increases. The change in electrical
resistance along the length of the specimen after f-Lve
passes is shown in Figure 3. Curve i is after zone-
Melt~n,-, and Cu-rve 2 after an additional heat treatment at
600 C for 2 hours. The first zone has much hizIaer
resistance than the last.
There are 3 figures and 1 English reference.
Card 3/3

00
9- -/S-0 0 66168
AUTHORS: Shashkov, Yu. M,j Akimchenko, I. P. .)'0V/20-128-5-20/67
TITLE: Diffusion of Lithium Into Silicon
PERIODICAL: Doklady Akademii nauk SSSR, 1959, Vol 128, Nr 5, PP 937-939 (USSR)
ABSTRACT: The preparation of monocrystalline silicon alloyed with
lithium became interesting. Owing to the chemical aggressiveness
of lithium the diffusion of lithium into monocrystalline
silicon presents the most suitable method of producing the
alloy. This is also favored by the large value of the
coefficient of the diffusion of lithium into silicon. The
distribution of the admixture in the sample can be calculated
with sufficient accuracy provided the diffusicn coefficient
of the admixture in the sample is known. Refezence is made to
a number of pertinent preliminary papers. It was of interest
to examine existent data on the diffusion coefficient of lithium
into silicon as a function of the perfection of the silicon
crystals. This problem is also of theoretical interest. The
dependence of the coefficient of the diffusion of lithium into
silicon on the number of structural deficiencies in the
crystal may be regarded as a criterion proving diffusion to
Card 1/4 proceed along the interspaces between the lattice nodes as
&K

66168
Diffusion of Lithium Into Silicon "OV/20-128-5-20/67
well as verifying the mechanism of the dependence of the
diffusion coefficient on the do,-,ree of structural perfection.
In doing so, the existence of atoms between the lattice nodes
and of substituting atoms is assumed. Substitution took place
out of a thin sheet of metallic lithium applied to the
surface of the sample after this had been cut and etched with
an aqueous KOH solution. The upper side of the lithium sheet ww tm
covered by a second sample. The execution of the experiments
is briefly described. 2 Types of samples were used for these
experiments, differing widely in the number of grooves formed
in the etching process. They are purely monocrystalline and
contain a great number of twins and dislocations. In the
latter case diffusion took place pezpenclicular and parallel
to the extension of the twins and dislocations. The samples
were cut out of cast pieces, which had been prepared by a
special method. A table listing the following data is in-
cluded: characteristic properties of the samples, their
resistance, the temperatures of diffusion-annealing, and
the values obtained for the diffusion coefficient. These
Card 2/4 values are illustrated by a diagram on the coordinates 4/

Diffusion of Lithium Into Silicon
AS, "EAT ION'
Card 3/4
crystals,according to which diffusion proceeds --t the lattice
nodes and also in between. There are 2 figures, 1 table, and
6 references, I of which is Soviet.
The data given in the papers by Fuller, Severiens, et al
(Refs 1, 2) are in good agreement with results obtained in the
present investigation. The data obtained by the prezent
investligation indicate that the diffusion rate of lithium is
independent of the structural perfection of the silicon
crystals. This confirms that lithium diffuses through the
interspaces between the nodes only. Furthermore, this data
indicates the validity of the mechanism of the dependence of
the diffusion rate on the structural perfection of the
66168
SOV/20-128-5-20/67
logD - 1/T. The experimental points on this curve form a
straight line, which for the temperature interval 400 to 8000
may be defined by the equation D = 2.2.1o-3exp(-16200/RT) CM2/6c.
Institut metallurgii im. A. A. Baykova Akademii nauk SSSR
(Institute of Metallurgy imeni A. A. Baykov of the Academy of
Sciences, USSR) L4--,

66168
Diffu~.io~l of Lithium Into Silicon .1011/20-128-5-20/67
P .172, T'--'! ~ :May 27, 1959, by I. P. Bardin, Academician
SUBtilITTE'D -. April 30, 1959 L41
Caxd 4/4

PHASE I BOOK EXPLOITATION so V/3 541
Shashkov, Yuriy Mikhaylovich
Metallurgiya poluprovodnikov (Metallurgy of Semiconductors) Moscow, Metal-
lurgizdat, 1960. 212 p. Errata slip inserted. 5,20o copies printed,
Reviewers: B. A. Krasyuk, Doctor of Technical Sciences, Professor, and A. A.
Rudnitskiy, Doctor of Chemical Sciences; Ed. of Publishing House: 0. M.
k~imayeva; Tech. Ed.: P. G. Islentlyeva.
'PURPOSE:-This book is intended for technical personnel engaged in the development
and production of semiconductors and semiconductor devices.
COVERAGE: The book deals with current problems in the metallurgy of semiconductors
(germanium and silicon). Attention is given to physical, chemical, electrical,
and optical properties of germanium and silicon, chemical and metallurgical
purification, growth of single crystals, heat treatment, alloying, obtaining of
electrically heterogeneou,7 str,,:2tiixes, and etching. The author thanks the fol-
lowing persons for their in preparing the manuscript: N. V. Ageyev,
Card 1/T

Metallurgy of Semiconductors
S0v/- 3 541
Corresponding Member, Academy of Sciences USSR; N. Kh. Abrikosov, Doctor of
Chemical Sciences; D. A. PL-trov, Doctor of TL-chnical Sciences; B. A. Krasyuk,
Doctor of Technical Sciences; and A. A. Radnitskiy, Doctor of Chemical Sciences.
There are 293 references: 61 Soviet, 203 English, 19 German, 4 Japanese, 3
French, 2 Czech, and 1 Polish.
TA.BLE OF CONTENTS:
Preface
Ch. I. Physicochemical, Electrical, and Optical Properties of
3
Germanium and Silicon 5
Physicochemical properties of germanium and silicon 5
Electrical properties of germanium and silicon 7
Optical properties of germanium and silicon 15
Ch. II. Chemical Methods of Purifying Germanium and Silicon 16
Production and purification of metallic germanium 17
Production and purification of metallic silicon 25
Acid rinsing of silicon 26
Production of silicon by zinc reduction of silicon tetrachloride
(Beketov's method) 26
Iodide method of -3btainin,,,-,, silicon 31
Card 2/ 7

7; :z
Nletallur~Zr of Semi conduc tors SOV" 41
Silane method of obtaining silicon 35
Trichlorosilane method of obtaining silicon 38
Production of silicon by hydrogen reduction of silicon tetra-
chloride 4o
Other methods of obtaining high-purity silicon 41
Ch. III. Metallurgical Methods of Purifying Germanium and Silicon 43
Principle of purifying by localized melting, gradual withdrawal of
single crystals from melts, and oriented crystallization 43
Theory of distribution of impurities in gradual withdrawal of single
crystals from melts, in oriented crystallization, and in localized
melting 45
Distribution of impurities in gradual crystal withdrawal and
in oriented crystallization 45
Distribution of impurities in localized melting 56
Volatilization of impurities during melting and crystal withdrawal
in vacuum 67
Card 3/ 7

Ketallurgy of Semiconductors
SOV/3541
Coefficient of distribution 70
Equipment used for puxifying germanium and silicon by, metallurgical
methods 73
Process of purifying germanium and silicon by metallurgical methods 84
Purif)ring of germanium 84
Purifying of silicon 85
Utilization of -reaction be-,ween gaseous and liquid phases 86
Purifying by extraction
87
Ch. IV. Growing Monocr-fstals of Germanium and Silicon 89
Methods of growing sin.-le crystals of germanium and silicon 90
Growing of single crystals by gradual withdrawal-from melts 90
Method of horizont-al localized melting 98
A-thod of vertical non-ci-acible localized mRlting 1o2
Other methods of wroving single ct-ystals of germannilm and silicon 107
Crystallo.-raphic orientation and the shape of groving monocrysta-ls 107
1.0
Macro- and microdefects in monocrystals of germani-jm and silicon 1.1
Macrodefects ill
1.1ic 1 -) de f e c t s 118
Card 411.7

of ',~Y-_miconductors
Effect of growth conditions 125
Characteristic features of installations for gro-vJ.-h of sin,, crystals 126
0.. V. Heat Treatment of Germanium and Silicon 129
Heat treatment of germanium 129
Heat treatment of silicon 133
Ch. V1. Diffusion of Impurities in Germanium and Silicon 139
Methods of measuring the diffusion coefficients of impurities in
germanium and silicon 139
Diffusion of impurities in solid germanium and silicon 145
Ch. VII. Alloying of Germanium and Silicon 150
Alloying by Introducing addition alloys into the melt 152
Crystal-withdrawal method 152
Localized-melting method 158
Preparation of the addition alloy 16o
Alloying with elements in the gaseous phase 162
Card 5/7

Metailuxgry of Semiconduet,.)rs
_;0 VI/ 3:-14. 1
Distribution of impurities in a growing crystal 162
Alloying with elements in the gaseous phase 166
Alloying by diffusion of addition elements. Some other methods of
alloying 163
Ch. VIII. Production of a Heterogeneous Electrical Structure in Mono-
Crystals of GermEL-iium and Silicon and Preparation of Ohmic
Cortacts 160
Production of electrically heterogeneous structures during the
growth of monocrystals 169
Production of electrically heterogeneous structures during local-
ized melting as a result of the temperature gradient 177
Production of electrically heterogeneous structures during partial
melting of monocrystals 180
Production of electrically heterogeneous structures by fusing on
other metals or alloys 182
Production of electrically heterogeneous structures resulting from
diffusion of addition elements in the solid phase 187
Card 6/ 7

Metallurgy of Semiconductors SOV/1 14 l
Preparation of contacts 191
Ch. IX. Etching of Germanium and Silicon 193
Manifestation of macro- and microdefects and orientation of
monocrystals 193
Etching of germanium 193
Etching of silicon 196
E'tching of semiconductor devices 199
Bibliography 203
AVAILABLE: Library of Congress
VK/fal
Card 7/7 5-12-6o

82630
s/18o/60/000/004/025/027
4) 10 E193/E483
AUTHORS~, Abrikosov, N.Kh., Lyan-Tszun*-U, Shashkov, Yu,,M.
T-Moscow)
TITLE3 On the Volatility of Boric Oxide in Helium and
AHydroge in the Presence of Water Vapour
PERIODICAL: Izvestiya Akademii nauk SSSR, Otdeleniye teklinicheskikh
nauk... Metallurgiya i toplivo, 1960, No.4, PP,156.-159
TEXT% The rate of evaporation of boric oxide in dry and wet
helium and hydrogen, at temperatures between 800 and 14oo 0C, was
studied by the dynamic method. The results are reproduced in
Fig.2 to 6~ Fig.2 shows the temperature dependence of the vapour
pressure p of B205- Fig-3 (plotted in the logarithmic scale)
shows the decrease in weight of B203, per unit area (& , mg/cm2)
as a function of rate of flow of helium (V, 1/h) of dry (-broken X
curves) and wet (continuous curves) at various temperaturds, the
partial water vapour pressure in wet helium being PH20 = 0.0313
atmospheres. Fig.4 illustrates the same relationship for dry
(curve 1) and wet (curves 2 to 5) hydrogen. In Fig.5 the degree
of saturation of wet helium with HB02 vapour is plotted against the
rate of flow of the helium-water mixture at various temperatures.
Card 1/2

82630
s/18o/60/000/004/025/027
E193/E483
On the Volatility of Boric Oxide in Helium and Hydrogen in the
Presence of Water Vapour
Finally the temperature dependence of the vapour pressure of HB02
at PH20 = 0.0313 atm is shown in Fig.6. The latter relationship
in the 1133 to 16370K temperature range is described by
5.043 - 43.490
log PHB02 = 4--575T
The conclusion reached was that the rate of evaporation of B201
in helium and hydrogen increases considerably in the presence of
water vapour. There are 6 figures and 15 references-, I Soviet,
11 English., 1 French and 2 German.
SUBMITTED-. March 22, 1960
Card 2/2

-) 417 2 &10 M
1/3)
/5ot)/6u/ou- 004/021/024
0/
~.l 9'V E 163
AUTHORSt Shashko- Yu and Ko I esn 1 lrova ~r. P,
TITLE: Electrica.1 Conductivity r~;otherms of Binary
3emiconductor System-i
PERIODICAL: Akademiya nauk SSSR- Institut metallurg-13.,
Trudy, No.4, 1960, 'Matallurgiya, metallovedeniye,
riziko-khImiche-Akiye metody issledovaniya- pp.236-239
T EXT Rapid progress_ in the fabr:1.caTion of semaconductor
devices brought about an increased demand for new semiconductor
materials incLuding inter-metallic conipoundFz alLoys, sulphides,
and oxi-des Succcssf'ul applicatioti of these materials depends on
understanding ot- the effect of' lhe.ii compcsition on their
properties electi-iral propeitie& in patticular The aim of the
present authors uras to analyse publisiied experimental data and on
this basis to formulate certain laws governing the variation of
electrical conductivity in binary semiconciuctor iystems , with
particular ref erenc e to syst ems f ormed by oxide_~ Regarding the
systems in wh_ich the second component 15 present in very small
quanti t _i es it has bc-en Shoxvn bv %.-at io~i~ (Refs.1-5) that
Card 1/ 7

1Y
509/-.U,()/()00/0()q/0,:, 1/024
E 19-3/1: 1 8'j
El ectric al Conduc, t iL,.l r-y Is ut hernis o f U i -nar V ~_S emt C onduc. t or Sys t eins
addition of- a c component whi c h . (-in di ~ sc I ti t i on for-ins current
carriers ident iral wii 1i thw4e pre.; ent i n tlic- sol%, ent mat er-i.al,
brings about an i nc r E.-a ~: v i ri t ondlic t i v, i t vwhereas a decrea5e of
conductivity is_z caused by addition of conlpoilclltt~ of Sign Opposite
to that of the intrin~_ic carrier-, of thc so,l-ew, In cases wherc
both excess electrori_~ and holes are pre-f-ro in equal quantities..
electrical coxiductivi(y of' tlie -;(Ax-ent is increa.ied by the
addition of any component capable of intrea"ing Lhe carrier
concentration of eith-r sign,; This appcars to be a general law,
as is illustrated by dada giveti_in Fig 1. -here tire logarithm of
electrical conductil-ity (X, vilm ICM'I) of NiO ',holc- conductivity),
ZnO (electron conductiVlty) aild CI-10 (InErMS1, conductivity) is
plotted against L1,20 and Cr203 culltel't (m01 Regarding the
systern~- formed by (onipciAnds with identi--al valericy cationE~ which
usually form a series of Euclid soliition-s. analysi.s of the
electrical conductivity i5othernis of -,;items of the A1203-Cr203~
Fe203-Cr203- "'190-COO N10-MgO sysicm.- L~hol- Iliat electrical
conductivity of evsteiiis: of tbi4 tvpe rharig(- monotonically from
Card 2/ 7

896L!
5/ 509/60/000/ 004/ 021/ 024
E193/EI83
Electrical Conductivity Isotherms of Binary Semiconductor Systems
one component to another, except for very narrow composition ranges
near each end of the system where sometimes minima may be present
on the conductivity isotherm. The same applies to heterogeneous
systems such as CaO-ZrO2, A120--S'02, Ti%-Si%, except that the
isotherm will pass through a s?larp maximum at compositions
corresponding to compounds formed by the two components. This case
is illustrated in Fig.2, where the resistivity (o, ohm.cm) at
1000 IC is plotted against the composition of the Zn02-CaO system.
When the electrical conductivity isotherms are compared with the
constitution diagrams of the corresponding systems, -the former
curves frequently show minima and maxima ,those presence cannot be
explained in terms of changes in the constitution of the system
studied. The CaO-Cr-203, '1%1gO-NiO, A1203-Cr-)03 systems provide
typical examples of this effect. The presence of these extrema may
sometimes be incidental, being caused for instance by predominance
of the surface conductivity at certain compositions (the A1203-
Cr20- system) or by the effect of one component being compensated
by t e impurity present in the other component. In some cases,
Card 3/ 7

S/509/60/000/004/021/024
E193/Ei83
Electrical Conductivity Isotherms of Binary Semiconductor Systems
however, the minima and maxima of electrical conductivity
constitute an intrinsic property of the system which is associated
with the nature of conductivity of semiconductors. CaO-L120
(Fig-3) and CaO-Y203 (Fig.4) systems represent two such cases.
The curves on Figs. 3 and 4 represent conductivity (X, ohm-lcm-1)
curves constructed for the CaO-rich ends of' the systems from
measurements carried out at 100 and 10- mm Fig at which CaO
(amphoteric semiconductor) has electron and hole conductivity,
respectively. In general, increasing the LL20 and Y203 content
causes variation of the electrical conductivity of CaO in
accordance with the law discussed at the beginning of the present
paper, i.e. the conductivity is either increased or decreased,
depending on the sign of the carriers in CaO and in the other
component. However, in both systems, the isotherms showing the
t,ariation of conductivity for the case when this property is
decreased by the addition of the other component, have minima.
Analysis of changes taking place in this case shows that when
electrical conductivity is reduced the number; of current carriers
Card 4/ 7

89641
S/5og/6o/000/004/021/024
E,193/E183
Electrical Conductivity Isotherms of Binary Semiconductor Systems
of one type decreases up to a certain limitt characterized by the
minimum of conductivity, after which the sign of the darriers-
changes (i.e.-electron conductivity changes into hole conductivity
and vice versa) and their number increases. This means that in
this case, the presenc'e of minima on conductivity isotherms is not'
associated with the formation of a new phase but is caused by
changes of the mechanism of conduction due to dissolution of the
solid component. In the final paragraph, the difference between
the shape of electrical conductivity isotherms of binary semi-
conductor and metal systems is discussed. -In contrast to metals,
addition of a second component to a semiconductor in systems in
which substitional solid solutions are formed may not-only decrease
the electrical conductivity but also increase it, and the
conductivity isotherm for a b:Lnax-y semiconductor system, forming a
series of solid solutions, has no minimum. In addition, when a
compound is formed in a binary semiconductor system, the
electrical conductivity does not increase, but decreases.
There are 4 figures and 15 references: 6 Soviet and 9 non-Soviet.
Card 5/7

8964!
S/5oq/6o/ooo/oo4/02l/024
Electrical Conductivity Isotherms ... F193/E183
x
"'XM
49 '100"0"
Vkj
.ZnO lei
N
CUO
4
r 020,1-
PHC.
Cavd 6/7
Lila
Plic. t
Fig. 1

89641
6/509/60/000/004/021/024
Electrical Conductivity Isotherms E193/E183
0
0
0
C. %-Z
N
Fig.2
Card 7/7

AERXOSOV', N-Kh. (Moskva), LYAN TSZUNI-U [Liang Tsun-wa]; SHASHKOV, TV.M.
(Moskva)
Ojqgen solubility In molten silicon. Izv. AN SSSR. Otd. tekh. nank-
Met. I topl. no.6:65-68 N-D 160. (MM 13:12)
(Silicon-Oi7gen content)
(Liquid metals-OVgen content)

3/!37/62/000/005/006/150
A0061A10I
:17hash-Kov' yu. Mi.
TITT-73: Electric conductivity of titanium containink, sia&~
R;?ferativnyy zhurnal, Metallurgiya, no. 5, 191-S2, 10-11. abstract
5A66 (V sb.. "Fiz-khim. osnovy proiz-va st'ali", Moscow, AN SSSR,
19051, 262-265)
1h
e author studied electric conductivity of slags in sy5tem Ti02
1,11203 - CaO - MZO. The experiments were carried out Linder reduction
cond-Ttions, The slag resistance between the central Mo-electrode and the
graph,tp crucIble, arranged co-acially, was measured. In the slags investigated,
tha T1,0-,/'."102- ratio war, 0.1 - 0.3 and did practically not change during the
measure,mients. The results obtained show a considerable Influence of the slagg
c6mnosition on its conductivity. It Is assumed that the structure, revealed in
titanium slags in solid state, Is also reserved in liquid condition. This
predetermines the semiconductor nature of the melt- conductivity. Changes in the
ej.nctrlic- conductivity at a varying ratio and quantity of slag components are
Card !Al

~/Oc-/ 'cco/bo5/bc)6/150
L
Electric of t-an`um containing slag AGOVA101
expia4ned by in the portion and type of oxides, disv~ectat('d into
ions.
Yi;. Nikivin
rAbstracter's note: Complete transi.ation]
Card 2/2

S/!3y/62/ooo/006/006/163
A 0061 /A 1:1' 1
AUTHOR: Yu. M.
T 1 I'LE problems of, zonal melting jr' inetais
I*E"-II(,IDI-~,AL- ket'erativnyy zhurnal, Metallurgiya, no. b, 19o'..' al)stract 6A84
in collection: "Fiz.-khim. osno-vy proiz-va otaE"', Moscow, AN SSSR,
761 315 - 319)
-:a,r; Ta,~ author attempted to estimate theoret-ically Lnt- 4--L'fecT, of the
metal refined by zonal melting in a crucible and the crucible
rii~~ari-al, upor., the distribution of admixtures over the ingot length after pas-
through the zone. Some factors are pointed out which should be taken into
when devel-,plLng a unit. for, the zonal melting of metal.
T. Kolesnikova
[Ab_~--icter'z ComoleLe translatiold

SHASHKOV, Yu.M., LYAN TSIN-U [Tdang Chilng-wuj
Kinetics of the heterogenous reaction between sillicon melts and
a mixture of hydrogen vapor and hellium vapor. Izv. vys. ucheb.
zav.; chern. met, 6 no.7g2?-32 163. (MIRA 16:9)
1. Gosudarstvennyy nwachno-issledovatellskiy proyektnyy institut
radkometallicheskoy promyshlennosti, Moskva.
(Vapor-liquid equilibrium) (Silicon alloys-Testing)

L 128 6
EWP /EWT-(R) /]~DS AFFTIG/ASD/A PrXC WH/JD
ACCESSION NR: AP3002941 S/0076/63/037/Oo6/1397/1399'6
AUMOR: Shaahkov, Yu. M.; Kolesnikova,, T. P
f
TIM: of semiconductor silicon
SOURCE: Zhurnal fizicheskoy khimii, v- 37, no. 6, 1963, 1397-1399
TOPIC TAGS: surface tension, oxygen, boron, phosphorus, quartz, silicon,
semiconductor
A13STRACT: e effect ol'n-?the surface tension of silicon of semicon(gating
-purity of e oron (acceptor), phosphorus (donor), and uartAgdas
evaluated by the method of weighing drops of molten silicon falling from the end
of a cylindrical bar. 0 (10 sup 16 to 10 sub 18 atoms/cu cm) had little effect on.
the surface tension; B (to 10 sup 20 atoms/cu cm) also had little effect; while P
had a tendency to lower the surface tension and quartz increased it slightly.
(0, B, P are quartz impurities*in Si.). "In conclusion the authors consider it
their duty to express appreciation to Liang Tsun for help in the experirrental
work." Crig. art. has: 1 table and 1 equation.
ASSOCIATION: None
Card
Z.-.. -11V.-

ACCESSION NR: AT4035157 S/2765/64/000/000/0372/0375
AUTHOR: Shashkov, Yu. M.
TITLE: Dynamic alloying from the gas phase
SOURC'- Konferentsiya po fiziko-khii-iiicheskim osnovam proizvodstva stali. 6th,
196". Fiziko-khImIchaskiye osnovy* proizvodstva stali (Physicochemical basis of
stee; .-w-oducLion); trudy* konferentsfi. Moscow.-,,, Izd-va "Nauka," ',964, 3-,2-375
T 0 P I C -1. * A G'S :steel, --.)I1oyinq, dynamic alloying, gas phase alloying, silll~cori anti-
riow.,, fus,ion. si I ;cnn phosphorus fusion, semiconductor alloying, admixture
d i s t r i bu,A on
A B S T RA CT: ;)uthor diescribes the pr~lncip!es and techniques of dynamic alloying
treatment for a quantitative calculation of the co~-
ra
t. -nd fi~ stribut ion of admi i xtures in the ingot during a I loyi ng from a
gas p:i~asc; in the process of zonal fusion. In a typical process, the vaporized
a~w lo~'-rirvz-i is conveyed in a high-vacuum assembly from a vaporizer through
a lwated ~o thvi fu-,u4 zone. From the amount of admixture fed into the fusion
zone, Otp(D d.t.
Card 1/2

ACCESSION NR: AT4035157
where /-? ;~e ioeffi(-JenL of acctmiludatio-ii, 6t~ ir. the coufficient of losses due
~0 georlietr'Cal raclwrE~~ (P. is the addition input from the vaporizer tube and t is
t i III(! , 010 8L; 0)Q;- derlve~~ a series of equations for the factors acting on the con-
centration o~' 'Khe adimixture in the zone (vaporization, melting, crystallization)
and arrives at 01?nal :,quations which allow technical estimates of the required
aulaunts of :3, "layin" !"ement ind contrall of its addition, The representive process
Of 5; 11cor-aritimony and otilicon-phosphortis fusing is discussed and the apparatus
used is art. t-.as-.4 and '15 formulas.
ASSOCIATION. nore
SUMMED: 00 DATE ACQ: 30Apr64 ENCL: 00
SUB CODE: MM NO REF SOV: 001 OTHER: 004
Card 2/2

ACCESSION NR: AT4040557 S/2564/64/004/000/0117/0121!
AUTHORt Shashkov, Yu. M.; Rozhdestvenskaya, V. Va
TITLEz Growth of silicon carbide crystals from the gaseous phase
SOURCE: AN SSSR. InstiLat kristallografii. Rost kristallov, v. 4,
1964, 117-121
TOPIC TAGS: silicon carbide, single crystal growth, silicon carbide
crystal. crystal growth equipment, vapor phase growth, silicon car-
bide sublimation
Ai~STRACT: growth of silicon carbide single crystals by deposition
from the vanor phase on a silicon carbide substrate has been analyzed
from the standpoint of vapor supersaturation,;a factor not considered
in earlier studies. The a-type crystals were grown in an argon
atmosphere in a specially built vacuum furnace under a temperature
gradie-at excluding the effect of heat radiation on the growth process.
Details of the furnace, a graphite crucible, and an inner perforated
graphite cylinder containing the powdered substrate are pi:esented
Card 1/2

ACCESSION Nit: AT4040557
schematically. it was shown experimentally that the effect of vapor
supersa~:uracion is determined by the diameter of perforations and
the temperature (height) of the substrate. The linear dimensions of
a cr/stal reach a maximum at certain values of the diameter of per-
forationo and the hetght of the sub!jtrate. In the early stage
of crystallization, the crystal volume increases proportionally to the
cube of the time of.growth; then, it increases proportionally to the
time. The slowing of the growth rate is interpreted in terms of
the leveling of the supersaturation; the smaller the perforations,
the eatlier the leveling occurs, i.e. there is no longer a direct
dependence of the growth rate on supersaturation. Thus. besides
supersaturation in the vapor phase near the substrate, the most
he dimensions of the
important factors in the growth process are t
crucible and the charge-~ Orig. art. has; 6 figures.
ASSOCIATIONs n o n e
SUBIMITTED. 00
SUB CODE: SS
C.,d 2 12
DATE ACQ: 02Jul64
NO REF SOV: 000
ENCL: 00
OTHER: 004

ACCESSION NR. AP4034927 S/0181/64/006/005/1449/1452.
AUTHOR: Shashkov, Yu. H.; Shushlebina, N. Y&.
TITLEt Growing silicon carbide from a silicon melt
SOURCEt Fizika tvordogo tala, v. 6, no. 3, 1964, 1449-1452
'TOPIC TAGS: silicon carbide, silicon carbide growing, silicon,
silicon melt, single crystal, single crystal growing
ABSTRACT: The growing of B-SiC single crystals from a Si melt has
been studied at the State Scientific Reseorch and Design Institute
of the Rare-Metals Industry, Moscow. This work was done because
the growin- of SiC from metal melts may lower considerably the tela,
erature of the growing and facilitate the doping of SiC single cryg-;
tals. Single-crystal Si with an electrical resistivitz of JLO-20
ohm-cm was melted in a graphite crucible in vacuum (107 mm Hg) in a;
resistance furnace similar to furnaces used for pulling Si single
crystals. The furnace was equipped with a Ta heating element and a
device which made-it posaLbLe.-to lower-and:-rotate the crucible
'Card 1/3

ACCESSION NR, AP4034927
and raise and lower the seed. The temperature was controlled by a
thermocouple placed at the bottom of the crucible. The moment of
melting was observed visually. To measure the temperature gradient
en the melt, an additional thermocouple was lowered into the melt.
The experiment was carried out as follows: the Si sample (about
3 g) was placed in the crucible. The.furnace was evacuated, and
the heat mas turned on. After the Si had melted, the melt was
superheated to a predetermined temperature and held at that temp-
erature for a definite amount of time. During that time the Si
evaporated markedly. Then the furnace heat was turned off, and the
melt crystallized rapidly. Rapid cooling was selected after special:
experiments which showed that crystal growth proceeds almost exclu-
sively by the transfer of the SiC formed from the hot zone to the
cold. After removal of the crucible from the furnace, the Si was
leached out with a mixture of HF and HN034 The SLC crystals obtained
were transparent single crystals yellowish in color.and cubic, col-
umnar prismatLao oatohedria, and Ismallar in shape. The crystals
could be divided into three fractions according to size. The largest
card 23

ACCESSION NRo A?4034927
;'crystals were 0&1-0*5 mm thick and 1.5-2'mm long. The large-size
fraction consisted mainly of columnar crystals elongated along the
prism axis. Goniometric measurements showed that the principal
plane forming the crystals is the (111) plans. The replacement of
the vacuum with argont which lowers Si evaporation to practically
zero, had no noticeable effect on the shape of the growing crystals.
Hence it is concluded that the main role in the determination of the
character of crystallization is played by the temperature factore
Orig. art. has: 3 figures and 1 table.
ASSOCIATION: Gosudarstvenny*y nauchoo-issledovatellskiy i
proyektny*y inatitut redkometallicheskoy i-romyshlonennosti, Moscow
(State Scientific Research and Design Instrtute of the Rare-Metals
Industry)
SUBMITTEDt 29Nov63 DATE ACQs 20May64 ENCL: 00
SUB CODEt CH,PH No REF-SOV: 000 OTHERs 002
Lcard 3 / 3

L 21109-65 EPF(c)/LPR/E.4G(j)/E'.IT(m)/r-,WP(b)/T/z7WP(e)/!,!;IP(tY Pr-4/Ps-4
_JD_
~_ACCESSION NR: AP5002164 S/0120/64/000/006/0150/0151.
I - BezobrazoV N. T.1 Shashkayt Yu* He-
AUTHOR: Abayevg Bt 0 0 0
.TITLE: Slit graphjtpl~aater for single-crystat-groving devices 10
,SOURCE: PrLbory i tekhnika eksperLmen_taV7k_0. 6, 19649 150-151
:TOPIC TAGS: single crystal, single cryst-al,groving, single crystal
:growing device
;ABSTRACT,. The State Scientific Research and Plann~ng notitute of
the Rare Metals Industry has designed and built a furnace for growing
single crystals or -semfc-onductor materials. The furnace has a ape--
tcial graphite heater with vertical Slits which permit the-direct
-heating of material by an HP field (see Fig. l'of the Enclosure).
jTbe graphite block acts as a transformer creating Inside the cruci-.
.ble a high-frequency field which ensures an intensive stirring of the,
molten materL'al Th'e-gk'aphLte- blVek' also -ar#-Yddi*at:r4iu-hi`aie4-_._
The now device requires 302 less power and makes it possible to
increase the pulliaR speed,vhLch attains 10 mm/min in pulling
silicon single crystals 10 mmju dLamstare 'Orig-i art* bast 2 figures@
Card
1/3 - -------

1 211 -65
09
ACCESSION NRt AP5002164 ZYCLOSUREs 01
j
J.
Figo:1, Furnace lay,out
1 - Graphite-heateirt-.2,--qilartz--
cruciblel 3- induttor; 4 qu-artz
V shield;-~_.-:quartz base*
Card :5/3

s
L 24709-65 EWT(m)/T/EWP(t)/EWP(b) AFYIL/ASD(a)--5/AS(mp)-VMM(O)/ESD(,g )/ESD(t)i
Ij7Pcj JD
ACCESSION NR: AP5002582 S/0076/64/038/012/2992/299.5
-COAUTHOR: Shashko v Yu. M. Grishin. V. P.
Alp_:
Rate of s1:11con- growth from melt
~TITLE:
~SOURCE: Zhurnal fizichaskoy.;'khimii, v 38, no. 12, 1964 2992-2995
~TOPIC TAGS: silicon si' gle.ferystal, single crystal growth, silicon
dendrite, melt grown ciyetal, maximum growth rate, rate molecular
constant
ABSTRACT: The maximum rate of growth of.silicon dendrites from a
supercooled melt was measured at supercoolings of 4-15K in order to
determine the 1 cular constant (k) of the growth rate of silicon
MOL
single crvstals.jChe experimental determination of k was desirable
becauise of the wide discrepancy in theoretical values and the import-
ance f k in estimating various factors in the growth.of s Lug 1e
37,
cryst 1s. Silicon was vacuum melted and, after seeding, the dendrite
was ' illed out at an incr 'A' i pulling rate until it dwindled to the
p 9
shape of a needle. The j ".11 in gr.ate, corresponding to the moment at
which *the needle breaks a~way. was taken as a maximum growth rate..
Card 1/2

L 24709-65
ACCESSION NR: AP5002582
(V,) of the needle at a given supevcooling.- The needles consisted
of twine... Calculation of k was carried out, using the formulas
derived by D. Ye. Temkin (Dokl. AN SSSR, 132, 1307, 1960). 'and the
experimental Vm values. The curvature radius of-the top end of the
needle was also calculated from the Temkin formulas. . Calculations-
based on the k value for silicon, which was found to be 0.6:4 cm/sec-de
9
and o n t h e Temkin formula gave the Vm'values which were in
agreement with the experimental VM 'diata over the entire range -of
supercoolings. The sources,of error irr'the determination of k were
discussed. The k values obtained were compared with those for ger-
manium. The need was stressed for further a-tudy of the growth process~
..of dendrites and for application-.of~ the Czoehraliki method to produce:: -,.7
a more accurate k value,. Orig, -art'. hags e and 4 formu as.-
_-2~figur a i
ASSOCIATION:
GIREDMET
SUBMITTED: OlOct63 E N C41': 00 SUB CODE:: -MM, SS,
NO REF SOV: 004 OTHER:, 012
ATD PRM: 3167
Card 2 2

MOR C OV
EMPARAPULO, V.Kh.;
-'lliSMN, 71.1%; SMISLOV, 1,1.;
.tG11A NIEN
A'u-Te 141 Rq'

SMSHKOVJ YL.M. - SRUSHUBINA, N.Ya.
P
Formation of nondis'Located silicon single crystals at the increased
rates of pulling. Iz-v. AN SSSR. Neorg. mat. 1 no-5:643-647
x - My 165.
(MIRA 18:10)
1. GosudarstrennTj nauchno-Issledovatel'skiy i proyektny_v institut
redkometallichesko;v prom7shler-nosti, Moskva.

L 63625-65 EEC (b)-2/IWA(cy/Ea(-I)/EWT(M)/Edp~b
I II& i~ - I-i
UR/ T'~
0V
Acassiw NR: APS017211 0/65 PIt
sishkov'v Yui, Me; Grishin P.
AUTWR 0 VV
Tl=: Structure4f silicLqendrites
SOURCE: AN SSSR. Dokladys v. 162t no. 60 1965# 1349-1351 and Imert facing~p
J341
TOPIC TAGS: silicon dendrite,
cr h__dendrite structure,
dendrite ystal .growt:, germantuoi
ABSTRACT: Dendrites grown from a supercooled silicon melt were.studied. Etching
The cross sect on eaki th
was done with H2CrO, + IW (1: 1). L was Atudied by bi ng, .e..
dendrites and also by etching.. After a series of experluents,.an:etchant of
the composition BF + HHO 3 (1:2) was chosen.~: As. ~ in the case. of germanium den~'--
drites, the broad planes of silicon-dendAtep are the (111) plades* and the
growth of dendritis proceeds in the (112) direction. The broad planes usually
have three bands of dislocations along the,dendrite: a central- bands. (dislocaticMd
density 105-106 CM-2) and two more diffuse.lateral bands (103.cm-2). The ~.dis-.M
tribution-of dislocations is described, An-ex~natian-of.the cross settion';5-~Zj- t f4-
!Card 1/2

63625-65
ACCESSION NR: AP5017211
showed that in most of the dendrites, twinning planes passthrough!ihe entire.
dendrite, and that there are usually two twinning planes separated by a distance
of 7-10g. The impurity distribution in the cross section has an H-shaped
character, as in germanium dendrites. The transition region between-tbe needle
and the dendrite, as welA as the needle itself Are-deacribed in terms of thick-,
ness, dislocation banda,14and twinning planes. The study shows that-the structure
of silicon dendrites and their segregation characteristics are similar to those
of germanium dendrites, From a comparison of,the structure of the needles and-..
dendrites and of the transition region, it is concludedthat the growth of
silicon dendrites, like that of germanium dendrites, occurs in two.stages. Origb
-art. has: 3 fi
gures,
ASSOCIATION: Gosudarstvennyy nauchno-issledovatel'skiy i proyektnyy institut-,',
redkometallicheskoy promyshlennosti (State Scientific Research and Planning in-
stitute of the Rare Metal j!jdustry),
SUR4rrM: 3 1Dec64 ENCL: 00 SUB CODEf:, IC'i SS
NO REP SOV: 004 OTMCR:
Card 2

L 64456-65 EWT (1.)/E,'IT (m)/T/E',YR(t.)/EWP (b)lbimc)' L' JDAGG
ACCESS1014 NR: AP5020835 UR/0020/65/163/oo4/0942/0944
qyxl~' C31
AUTHOR: Shashkov. Yu. M.; Grishin, V. P.
~2
1ITLE: Supercooling at the crystallization front during the growth of silicon monoL,-
crystals b the Czochralski method
SOURCE: ANSSSR. Doklady, v. 163, no. 4, 1965, 942-944
TOPIC TAGS: silicon single crystal, germanium single crystal, single crystal
growth, supercooling, crystallization
ABSTRACT: Supercooling at the crystaUization front during the growth of Si 111
monocrystals was determined by two methods. Temperature chang-es'during,
crystal growth were measured in the melt (1) at the meniscus (H) and in the crys,-!.-
tal (M). The temperature gradient was least in I and greatest in M, but was
constant within each segment of the curve. Supercooling, determined directly at
the point of intersection of II and III was 2. 4 C for a crystal growth irate of
2 mm/min. Temperatures at the melt-meniscus interface were measured during i,
the c7r~tal drawing and when the drawing was stopped. Supercooling was then
Car
d

L 64456-65
ACCESSION NR: AP5020835
determined from theequation
-8). TU.- To xs "U. - To 'IT + SLVJI
where S is crystal cross section; X heat conductivity of the melt; To --S1
crystallization temperature; Tul and Tu2--temperatures under meniscus during,
crystal drawing and when drawing was shut down; hl and h2 height of inter- I
face rise during crystal drawing and during shut-down;. A T-- supercooling at the
interface; v--rate of drawing; L--heat of crystallization and d--density of the
melt. Supercooling was 2. 35 + 0. 21C when -1-1 2mm/mi n. Supefcooling at the,
ewstal-melt interface increased sharply as increased from 1-3 mm/min, and
increased much less when V-> 4 mm/n-xtn, while keeping the crystal diameter
constant. There was no noticeable change in the su ercooling when the crystal
p
diameter was increased from 10-26 mm while maintaining constant. It was
concluded the cr stallization mechanisms in Ge and Si are similar. in view of the
y
agreemenVof supercooling values between these crystals. Orig. art.. has: 2 fig-
ures and I equation
3
Lc

T
NRi AP5027181 SOURCE CODE: UR/0076/65/039/010/2559/2*560
1 5
Mel
AUIHOR: Shas!4ov nikov, Ye. V.
ORG: Girec'1%e'tb_-1_
TITLE: Effect of surface tension~n the position of the crystallization front during
growing of semiconductor single crystals,,,ty the Chokhral'skiy method
1%
SOURCE: Zhurnal fizicheskoy khimii, v. 39, no. 10, 1965, 2559-2560
TOPIC TAGS: single crystal growth germanium single crystal, silicon single crystal,
surface tension, crystallization, semiconductor single crystal
&BSTRACT: The position of the crystallization front over silicon and Rermanium melts
was measured under various pulling conditions. The melts were heated by electron bom-
bardment at 10-5 - 10-6 mm Hg, and the height of ascent h of the melt was photo-
graphed during growth of a crystal of constant diameter. Changes in thermal condi-
tions associated with changes in pulling rate, ingot diameter, and rotation rate (i.e..,
with temperature gradients in the ingot and in the melt near the crystallization
front) were found to have virtually no effect on the height of ascent of the melt.
The height of ascent does vary in regular fashion with the diameter of the growing
crystal, rising sharply at first, then tending toward a constant value; it is lower
for germanium than for silicon. The data show that the surface tension has a major
influence on the height of ascent of the crystallization front. High-speed motion-
picture photography (up to 2000 frames/sec) showed that the angle between the surface

ACC NRt AP5027181
0
of the growing crystal and the melt fluctuates both with time and with the crystalli-
zation front, and amounts to an average of 15 to 200 during growing of constant-dia-
meter ingots. Orig. art. has: 3 figures.
SUB CODE: 20 / SUBM DATE: 29Feb64 / ORIG REF: 001 / OTH-REF: 003

Zia,
;ACC HR: AP6006849 SOURCE CODE: tiT./O.181/66/'008/002/0567/0569
AUTTIOR: Shashkov, Yu. M.; Grishin, V. P.
,ORG; State Scientific Research Institute of the Metal and Rare Metal Industry,
Gosudarstven
-iss oy
Moscow nyy nauchno 'ledovat Wly n~ itut r~ metallicheskoy
priomyshlennosti)
i-k-LrLE- Thermal conductivity of silicon in the solid and liquid states close to the;
!melting point
SOURCE: Fizika tverdogo tela, v. 3. no. 2. 19136, 567-569
;TOPIC TAGS: heat conductivity, silicon, phase transition, heat balance, single
i
I crystal I crystal growth, temperature gradient, melting point
1ABSTRACT: The authors studied the thermal conductivity of silicon close to the
:.Melting point by measuring the therynal balance at the crystallization front during
crystal pulling by the Czochralski method. The equipment and procedure used in the:
iaxperiment are briefly described. The curve for the change in temperature during
1grovth of the crystal shows three sections which are close to linear. The first sec-,
Card 1/2-

rl 3973-C-66
11ACC NR: AP6006849
tion has the lowest temperature gradient and corresponds to the variation in tem-
perature in the melt. The second section has an intermediate temperature gradient
!
jand corresponds to the meniscus due to surface tension. The section with the steep-i
est temperature gradient corresponds to the crystal. There is a considerable dif-
ference between the temperature gradient of the melt and the meniscus which is in
;direct contact with the crystallization front. It is found that the temperature
gradient in the meniscus is a linear function of the temperature gradient in the
!'crystal. Metallographic analysis showed that the crystallization front in these ex-4
periments was close to linear. The thermal conductivities were found to be 0.075
il 0.007 cal/cm/sec/deg fbr the solid phase and 0.16 i 0.02 cal/cm/sec/deg for the
!liquid phase, Orig. art. has: 2 figures.
iSUB CODE: 201 SUBM DATE: ei7jul651 ORIG REF! 0021 OTH REF: 004
;Card 2/Z-,
T

"OURCE CODE., UP,~/0058/66/000/C)09/AO,18'AO48
I S Y.- "-Vilikov, Ye. V.
L.I-,:: 0",ji-face ohenoniona in -,~uliingr single crystals the Czochralski method
Fizilta, -Abs~ 'M40..'-
St-. Povc-rkhnostn, yavleniya v rasplavaldi i vozni'1,.ayushchikj1 iz
ni1ih tvcrd. fa7zikh. Nal'chik, 19G5, 585-589
crystal growth, serniconductor crystal, crystal
C oci- -!~;ki niethod, germanimn crystal, silicon crystal
ADST RACT: A st.Lirlly was mad e of thc- effects of the param eters of pulling
gernianiuni and, silicon single crystals with a constant cross section on the rise of
Li-le n-,(--I-, up to the crysiallization boundary. It was found that the height of pull-Ing
L
is Pract-lezIlly independent of the rate of pulling and speed of rotation of the crystal
being pullcii. In excluding the pulling mechanism of the crystal by varying the
p e r atu r e, one can change tae rise which affects the diameter of the crystal.
L~,e curve showing the dependence of the rise on the crystal diameter lies
1/2

T n c