SCIENTIFIC ABSTRACT LARICHEV, P.A. - LARIKOV, L.N.

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• Collection: Scientific Abstracts
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• Release Decision: RIF
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• Document Creation Date: November 2, 2016
• Document Release Date: August 31, 2001
• Sequence Number: 8
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

LARICHEV.-P.A. (Moskva.)
The subject "powers and radica *le in class 8.P Mat.v shkole no.4:11-18
Jl-Ag 1569 (Algebra--4tudy and teaching) (MIRA 9:9)

URIGM, Pavel Afans I i h, ILUMEKINA, N.I., redaktor; KAKHOVA, N.Y..
Us
ow-TeEnnieneskly re%cwnk*-
(A collection of problems in algebra] Sbornik sadach po algebra.
Moskva. Goo. uchabno-podagog.izd-vo H-va proev. RSPSX, Pt.2.
(For grades eight to ton of secondary schools] Blis 8-10 klassoy
arednei shkoly. Izd. 8-oo. parer. 1957. 222 p. (HLRA 10:7)
(Algebra--Problems, exercises, etc.)

LARICHHV, P.A. (Hook-va).
Problems in rearrangiW the teanhing of mathematics in secondary
schools in connection with theintroducti,on of the new program.
Mat. v shkole no.4:16-23 S-G!'57. (KLRA 10:8)
(Hathematico-Study and teaching)

L&R1CHZV..P:avel.Af p4alyevich-, ISMAINA, N.L. red.; MAKHOVA, U.N.,
V~~` no r
(Handbook on problems In algebra; for classes 8 to 10 of secondary
schools] Sbornik zadach po algebra; dlia 8-10 klaasov arednei
shkoly, lzd. 9-e. Moskva, Goa. uchabno-.pedaggg. izd-vo M-va
proev. RSVSR. Pt.2. 1958. 222 P, (14IRA 11-.4)
(Algebra--Problemo. exercises, etc*)

LARICHCV. P.A ---
Methodical advice. Hat. v shko2e n0.3:5840 MY-Je 158. (MIRA 11:5)
(Mathematice-Study and teaching)

IARICIW, P.A. (14oskva)
~- ~', _z
Study of arithmetic In the 5tb grade during the IV,9-1960
school year. Mat.v shkole no.4:15-17 JI-Ag '59.
(1,111U, 12-.11)
(Aritbmetic--Study and teaching)

S/124/6o/boo/oo6/035/0,39
AOO5/AOOl
Translation from: Referativnyy zhurnal, Mekhanika, 1960, No. 6, p. 17D, # 8025
AUTHOR: Larichev,,P.ya.
TITLE: The Calculation of Extracentrally Compressed Thin-Walled Rods on
the Base of the Deformati6n State __L~o
PERIODICAL-, V sb.: 17 Nauchn. konferentsiya professorsko-prepodavat. sostava
Leningr. inzh. stroit. in-ta, Sekts. matem., soprotivleniya materi-
alov, teor. mekhan., fiz., khimil, elektrotekhn., Leningrad, 1959,
PP. 79-82
TEXT: A thin-walled rod of open cross section with two axes of symmetry
is considered. It is compressed by forces applied to the ends with eccentricities.
Two coordinate systems are used: 1) a stationary system, 2) a mobile trihedron,
the edges of which are directed along the tangent of the 'deformed rod.axis and
along the main axes of the turned cross section. The expressions for the moments
of the external forces with respect to the movable coordinate axes are set up for
an arbitrary cross section: a) on the one hand, through the characteristics of
the cross sections and the derivatives of deformations, whereat approximate
Card 1/2

S/124/60/0(>O/006/035/039
A005/AOOI
The Calculation of Extracentrally Compressed on the Base of the Deformation State
formulae of the rod curvature are used, b) on the other hand through the moments
and the longitudinal force at the rod ends. By equating the right-hand sides of
the equations, a system of three nonlinear differential equations of equilibrium
is obtained. 'It is assumed that the deflections vary according to a sinusoid.
The equation system is reduced to one equation of seventh order with respect to
one of the deflections. The general and particular solutions are found. The
values of the four arbitrary constants in the particular solution are determined
from the boundary conditions. Having found the solution for one of the deflec-
tions, the expressions for an other deflection and for the torsion angle can be
derived, and having found these, the stresses at an arbitrary point of the rod
can be found. It is necessary to point out that the problem studied in the ar-
ticle is a special case of the problem considered by S.P. Vyaz'menskiy, (Sb.
nauchn. tr. Leningr. inzh.-stroit. in-t, 1957, No. 26, pp. 270-313 - RZhMekh,
1958, No. 11, j 1)244)*and L.N. Vorob'yev (Tr. Novocherk. politekhn. In-ta. 1958,
Vol. 69/83, PP. 3-48 - RZhMekh, 1960, No. 1, # 1232. G.M. Chuvikin
Translator's note: Thisis the full translation of the original Russian
abstract.
Card 2/2

~ LARICHMV, S.
I Mo, mum - m moksof,
Book sectiou for amataur photographers. Sov. f9to 17 ne.4:76-:77 Ap 157.
(Bibliography-Photography) (MLEL 10:6)

-at"
-.DECEASED.,.
v
1961/2

NIXITIN, Sargey Mikhaylovich; IAUOW--*, ;o, red.; VINOGRADOVA, V.A.,
tekhn. red.
[Indices of industrial production in capitalist countries] Indaks7
prozVehlennoi, produktsii v kapitalistichakikh stranakh. Moskva,
Goa. stat. izd-vo, 1958. 105 P. (Mm 1119)
(Industrial Statistics)

ISKRA, Viktor Maksimovich; LARICUT, V.I., red.; SHA RINA, N.D., takhn.red.
[,Automation--abundanee or new calamities?] Avtomatizataiia - izo-
bilie ili novye bedstviia? Moskva, Izd-vo VTaSPS Profizdat, 1959.
117 P. (HIU 13:7)
(Automation)

KISEIA, Krietat' [Misjo, Kristat]; LARICHEV, V*I., redo; RAKOV# Seleg
tekhn.red.
(History of the trade-union movement in Albania] Istorlia
profsoiusnogo dv12hmniia v Albanii. Moskva, Izd-vo VTsSPS.
Frofizdat, 1960. 94 p. (MIRA 13:8)
1. Sakretarl TSentrallnogo Soveta profooyuzov Albanii (for Kisha).
(Albania-Trade unions)

SOUM, Prantishek [Soukup, IrantiYek], insh.-, LARICIMV, V.I.,. red.;
S~MIKA# N.D. . tekhn.red.
[Electricity never accepts an excuse; 99 cases of violations of
operating rules and safety rules with indications of their causes
and conseqnsinceal Blektrichestvo ne proshchaet; 99 sluchaev
narashenli pravil ekepluatataii i tekhniki bezopasnosti s ukaza-
niam ikh prichin i pooledstvii. Koskva, Ind-vo VTsWS Profizdat,
1960. 156 p. Translated from the C28eh. (KM 14:2)
(Electric engineering--Safety measures)

- - - - .LARICHEV, Vo N.
LARICHEV,, V. N. -- "The Investigation of the Electric and Photo-
electric Properties of Transistors of the PbS Graup." Leningrad Physico-
techni6al last of the Acad Sci USSR, Leningrad, 1956. (Dissertation for
the Degree of Candidate in PHYSIMIATMUTICAL SCIENCES).
SO: KNIZHNAYA LETOPIS' (Book Register)., No. 42, October 1956, Moscow.

SOV/121-58-8-lo/29
AUTHORS.__Larf _V'-N._T 1-ind A.B. and Morozov I.K.
TITLE: A Pnaummati% Devi,--e fo-c the Inspe~:t-ion and Sorting of the
Housings of Live Centres (Pn--vmat-i(-,qeskiy pribor dlya
kont-lolya i scz-%-1irDvk� korpusov vr,,-shc'-rLayusb.cb.4,-]!Cb-sya
tseatrov)
PERIODICLL: Stanki 1 lnstri-.zent, 19.1589 Nr 91 pp 27-28 (USSR)
ABSTRACT; A p n e -amatic- device -is desc-.7ibad, developed by the Office
for of the Standards, heasures and
Measlil-inc Coimittee (Byu--rc 'Vzaimo--amenyayemosti
komitet,a sta-nda-,~-tr)'-;r, mer J- iZMGritel'ryykh priborov) under
-'-,he .:~esignatvion BIV-780 in order t-o i-nspe,::t the fitting
dimensiors cf f;h-- ho-asings of live centz-es for lathes.
Each of t'-Je two --'.nspe--,ted hole diameters is sorted within
the allowable limi-ts into four dimensional groups~ thus
,~-Aeat-J,Dg 16 groupso The maximum -,alue of the wean dia-
metei~ datsrninas tjiq group. The diameter and the deviation
.-['roz. Vie (,y i. j.n"A~-i cal. form measL;.-zed '-~.-%y two pairs of
nozzla:~. a--car.g-3d at right angles. Th3 ~il3tance betweell
is at,,7a~, --5"fo -of the length of the bore. Fig 2
Card 1/2 n0z~
shows t~-s --iT--uit. 1he air is filteTed and

SOV/121-58-8-10/29
A Pneumat-J*.-, Device for t--. TnSDe,
.:t-on an~ Sortin- cf the
of Live Centres
stabilised. and then p-_,o,_,,eeds to thq distributor containing
the intake nozzles with a diametez, so cthosen that the
measu-_,i,,,Z pi-ass-are f-;)d to the pneumatic plug is half the
wozr-king pressuz!e. The pneumatic plug is a two-step
cylfndri-,_~:al plug and inspects simultaneously two fitting
diameters and tha shape deviations (ovality and conicity).
It is -ome.-tad to an 8 contac~t differential maxaury
transmittez- operating 'b,,7 the counter--DreSSUre method.
In cL-a of the t-_,,ansnji_ttqi- a pressure
is Tile other cklhambs-,~ has its pressure varied
depending cn the o!atflow from the pneumatic plug.
Cali-t.ration is o-at with tha Inalp of a master
c~omponpzy--,.
Thai,a a_'t'-a 3 rigures
Card 2/2

AUTHORS: Kolomiyets, B. T., Larichev.. V. N.
TITLE: Investigation of the Photoelectric Properties of Sem-~.'
conductors of the Group PbS by Means of the Condense.-
Method (Issledovaniye fotoelektnj..nhesk_Jkb
provodnikov gruppy PbS kondensatornym me-~,~.dcm)
PERIODICALs Zhurnal Tokhniolieskoy Finiki, 1958, V07. 28t N, 5:
pp. 921-924 (USSR)
ABSTRACT: As is known, lead-sulfide, -selenide and -tellurld-_ .~x-
hibit a strong photosensitivity in the infrarel rang,~ o-
0
ly, if they are in shape Of Small polyaryS-~=114Tj~ layers,
'which were specially treated (activated) In ~.Xjgerl '~- il'~
air at temperatures of from 300 500"C. tni 4-hp
activation conditions, the photo;ensit41-iiity ran change by
the hundred- or thousand-fold. In order to understand the
nature of the photoconductivity of sach activated iay?r~~;
it is of interest to investigate the nor--F_i~tiirated subs-~;-_n-
ces. This, however, is connected with great experjMC-LT~!_i.
difficulties. The authors applied in their experiments
Card 1/4 the condenser method for the investligation of the in-Lernal

Investigation of the Photoelectric Properties of 57-25-5-V306
Semiconductors of the Group PbS by Means of the
Condenser Method
photoeffect in semiconductors (Referenoes 1 - 4). The
results obtained on the basis of the examinat3.ons art., as
followst The photo e. m. f. which was determined in lea:L.
-sulfide, -Belenide and -telluride by means cf the conden~
ser method, and the photoconduntivity in the ar;tivat-ed-
layers of these semiconduotora are of a completely dlfferent,,
type and are caused by tro different processe_-~. lecording
to data in publications it can be assumed, that the tilth
of the forbidden zone equals 0,37, 0,25 and 0,3 eV at ro,~m
temperature, corresponding to PbS, PbSe and PbTe- These
values correspond to the activation energy; which ras con.-
puted according to the long-wave limit" cf photocondu~~tlvj.--
ty. If, however, the activation energy is oomputed accor-
ding to the red limit of the spectral distribution of the
photo e. m. f., values are obtained exceeding by from 5-t8
times the width of the forbidden zone. Contrary to the
photoconductivity the photoeffect exhibiting such a spe.~-
Card 2/4 tral distribution cannot be explained by spatial pTo-esse.-:t.

Investigation of the Photoelectric Properties of 57-28-5-1/36
Semiconductors of the Group PbS by Means of the
Condenser Method
Just as mu2h the great time constant of the photo e. m. f.
(up to lo sec) cannot correspond to the mean life of the
light carriers in the volume, nor to the period of diffu-
sion equilibrium. In more pure monocrystals of PbSe and PbTe
the mean life of the carriers, which are not in equilibrium,
does not exceed 1o-7. The assumption seems to be most Dro-
bable, that the hydrogen atoms adsorbed at the surface re-
present very deep superficial level wells for the electrons.
Therefore the photoeffect is caused by a liberation of elec-
trons from these wells by the action of visible light. This
assumption is also proved by the fact that the magnitude,
the sign and the shape of the spectral distribution of the
nhoto e. m. f. is markedly dependent upon the influence of
ihe-atmospheric oxygen. From this assumption it also pro-
ceeds, that the sign of the photo e. m. f. in the general
'base does not determine the sign of the photocurrent. Tlie
results of this work cannot be regarded as final. Further
Card 3/4 investigations are necessary.

Investigation of the Photoelectric Properties of 57-26-5-1/36
Semiconductors of the Group PbS by Means of the
Condenser Method
There are 2 figures, 1 table and 6 references, 5 of which
are Soviet.
ASSOCILTION: Fiziko-tekhnicheskiy institut AN SSSR, Leningrad
(Phytic.o-technical. Inetitut6, AS USSRp-leningrad)
SUBMITTED: June 26, 1957
1,*., Semiconductora-r-photoconductivity
Card 4/4

!UTHORS: Kolomiyets, B. T., Larichov, V. 1% 57-28-6-33/34
V TITLE: On the Problem of the Mechanism of Conductivity and Photo-
conductivity in Polycrystalline Layers of Semiconductors of
the PbS Group (K voprosu. o mekhanizme provoaimosti i fotoprovo-
dimosti v polikristallicheskikh sloyakh poluprovodnikov gruppy
PbS)
PERIODICAL: Zhurnal Tekhnicheskoy Fizikij 1958, Vol. 28, Nr 6,
PP- 1358 - 1362 (USSR)
ABSTIUCT: In the present paper some experimental results obtained by
the investigation of the influence exercised by oxygen upon
the electric and photoelectric properties of polycry3talline
layers of PbS, PbSe and PbTe are described. On the basis of the
work carried out the following conclusions may be drawn: The nort-
linearity of the volt-amp6re characteristics of the photosensi-
tive samples can be looked upon as proof of the fact that non-
-ohmic transition resistances exist in the most active layers,
and titat they play am important part in the mechanism of the
conductivity and photoconductivity of the layers. For such samples
Card 1/3 the barrier theory of p-n-p transitions is applicable. It was

On the Froblem of the :iechan-ism of Conductivity and 57-25-6-33/34
Photoconductivity in Pola-crystall-ine Layers of Se=iconductors of the _F"DS 'Group
worked out by Slater (Reference 7) and Petritz (Reference 8)
.7ith respect to the layers of PbS. In photoresistances of PbSe
and in -;)articular of FbTe the p-n-p transitions are of secon-
dary inpertance. The oxy~;en, which is introduced into the layers
at room temperature, is adsorbed at the edges of the microcry--
stals. The nonlinearity of the volt-amp6e characteristics of
such samples do not prove, in the authors' opinion. that there
is no negative surface charge, but solely that there are no poten-
tial barriers on t~c edges of the microcrystals. Apparently the
influence exercised by the opposite boundary of the microcrystals
(Reference 0) makes itself felt. It follows herefrom that the
barriers of the Schottky type do not exercise any considerable
influence upon #the conductivity and photoconductivity of the
polycrystalline layers of semiconductors of the PbB group and
that the theory developed b..,- Smiih ancl Gibson (Reference i and 6)
is not applicable in this case. The atirface states occuring as a
rooult of oxygon adsorption apparently manifest themselves by
the existence of the photoeffect (with a maximum of spectral di-
Card 2/3 stribution in the visible part with a high degree of inertia),

On the Problem of the Mechanism of Conductivity and 57-26-6-33/34
Photoconductivity in Polycrystalline Layers of Semiconductors of" the Pbs Group
which is observed when measuring the photoelectromotive force
by the condenser method (Reference lo). There are 3 figures and
Io references, 2 of which are Soviet.
SU13MITTED: July 22, 1957
1. Semiconducting films-Conductivity 2. Semiconducting
films-Photoconductivity 3. Semiconducting films-Electron
transitions I+. Oxygen-Electrical effects '5. Lead alloys-
Properties
Card 3/3

LhRICHBV, V.N.; LIM, A.B.; MOROZOV, I.K.
Pneumatic instruments used for checking and sorting running-center
bodies. Stan. i instr. 29 no. 8:27-28 Ag 158. (MLRA 11:8)
(Engineering instruments)
(Lathes--Testing)

co
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0 'o %g
1104 0
It

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0 0 0
10

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A -7
p
a v 'a ng w a .0-
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go . -. I -; '.- S, ='. :1 . . ~ .
to~
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11,19: 094 VA vs.
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to
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. .. . .....
1

82991
S/181/60/002/008/010/'045
B006/BO7O
AUTHORS:. Zolotarev, V. F., Larichev, V. N.
.TITLE: p-n Junctions in Photosensitive PbS Films
PERIODICAL: Fizika tverdogo telaq 1960, Vol. 2, No. 89 pp. 1741-1750
TEXT: The aim of the authors was to investigate the volt-ampere
characteristics of PbS.films and their temperature dependence, and to
demonstrate the existence of p-n junctions. At present, there are two
groups of*theories for photoconductivity..One of the theories assumes
that, on illuminationp carriers are released where oxygen plays an
important role as electron trap. The second.theory is based on the idea
that the photosensitive film consists of a series ofp-n junctions. The
minority carriers, liberated by light, diffuse to the junction and lower
the-potential. barrier between p- and n-type regions, thus increasing the
photocurrent. In order to find out the actual meehanismg an experiment
suggested in Ref. 5 is used 'as the criterion. If potential barriers
exist in the film, volt-ampere characteristics must be nonlinear.
Card 1/3

82991
p-n Junctions in Photosensitive PbS Films S/181/60/002/008/010/045
Boo6/BO70
Therefore, the authors inVeBtUigated the volt-ampere characteristics of
PbS films prepared in different ways. The electrical circuit of the
arrangement is shown in Fig. 1. Typical characteristics (taken in light
and darkness) are shown in Fig. 2. The form of the characteristics was
found to be independent of the method of preparation of the film and to
depend on the manner of activation. Some samples showed a photo,-emf that
is directly related to the non-linearity of the characteristic. Chemi.-
cally prepared films of PbS showed linear characteristics for low
temperature activation in vacuo (Fig. 4). Fig. 5 shows ina (a - the
conductivity) as function of 1/T for chemically prepared films for high
temperature activation in air, taken in dark and in light of two
intensities. The results are discussed in detail. Experiments proved that
on high temperature activation in air PbS layers showed p-n-p junctions.
Films, that were activated at low temperature or in vacuum, showed no
potential barrier. The p-n junctions have shunts whose conductivity is
independent of temperature and exposure of the sample. The magnitude of
the shunt differs from film to film and also from junction to junction
in the same film; -the photo-emf is a consequence of the latter. The
Card 2/3

82991
p-n Junctions in Photosensitive PbS Films S/181/60/002/008/OiO/045
B006A070
surface-impurity conductivity~of an oxide film; or chains of free lead
atoms can act as shunt. Three possible reactions, from which free lead
may, arise on high temperature activation, are given~.The 0-- levels are
traps for the photo electrons in p-type region; free lead atoms are traps
for the photo holes in n-type region. The photoconductivity 6cr/a depends
mainly on the trap concentration and only slightly on the magnitude of the
shunts. There are 7 figures and 11 references; 3 Soviet, 7 US, and 1
German.
SUBMITTED: February 28, 1959 (initially) and February 29, 1960
(after revision)
Card 3/3

LARICHRV, V.N.; LIND, A.B.
Pneumatic device for checking the plates of a gear pumps Stansi
instr.' 34 no.5:31-32 My 163. (MIRA 16:5)
-(Pumping machinery-Testixxg)

FWT(I )'/FWT(m)- IJP(c) Aj/JD/JG
NR_ SOME _tWE: W02
,ACC 3/66/OD8/003/0958/0959-
AUTHOR; Iaricbe v~ W ff. arinovay V. A
Kazan state ia;er4~~sity im. _V. 1. Ullyanov-Lenin Xazanskiy gosudarotvenny
sitet)
Characteris ics of induced photo emf-in merc iodide
-.RESOURCE. Fizika tverdogo telay Y. 81 no. 3, 1966, 958-959
TAGS: mercury compoun
d., photo emf,, light absorption,, photosensitivity
~'ABSTRACT: The authors esent preliminary results of the investigation of induced
pr
~.,,.-..~.photo.emf in.mercury iodide,, consisting in the fact that prior exposure of the semi-.
Conductor to light in the region-of theintrinsic absorption in the impurity region
_~causes 6 sharp incre4se in the photosensitivity* This is connected with the transfer
_~of the carriers.-from the adhesion levels into one of the allowed bands. The induced
dMf Was iWeStigated by a Capacitor method.
of two monbehromators made
it* possible to ill e-the samples simultaneously with two beams of different wave-
-lengths...: The~samples were in the form of thin polycrystalline layers deposited on a
substrate,, and also in the form of powder and thin layers obtained by precipi-
-tation,,. - A plot of the spectrum shows that illumination with 438 = wavelength (re-'
-gion of intrInsic.absqrption) increases the sensitivity in the impurity region. The
sign or. the photo emf was determined by using.. a flash lamps and.was- found to be
negative in the intrinsic-absorption regionj and positive in the impurity region&
CaM

IARICHEV, V.Ye.; KRYCHANOV, Ye.I.
*The remote past of the Maritime Territory" by A.P.Okladnikov.
Izv.Sib.otd.AN &SSR no.1:105--107 162. UMk 15 :3)
(Maritime Territox7~--Ristory)

GIBDINA, H.M.; KOGANDVA G.V qM O.H.; MRLKOVA. A.Ye.; POLYAKOVA,
wi -
M.G.; SKORNIK16, 1:F;.t prof. otvetstvenrLvy red.
ROSHCHIIL~, L., red.izd-vB; IABEDSV, A., tekhn.red.
[State Bank of the U.S.S.R.; a brief account on the fortieth
anniversary of the October Revolution) Goeudarstvennyi bank SSSR;
kratkii ocberk k Borokaletiiu Oktiabria. Moskva, Gosfinizdat,
1957. 2.54 p. (MIRA 11:2)
1. Gosudarstveanyy bank, Moscow.
(Banks and banking)

LARICHEVA, 1. 1., Cand 1J.ed Set -- "Treatment of chron-le In-
IU4
flammatory diseases ofAfemale 40W organs by 4=e mud-
iontoDhoresis of the eol!~~ region under
r
conditions." Kiev, 1961. (Kiev Order of Labor Red Banner
Med Inst im Acad A. A. Bo,];omol ets) (KL, 8-61, 262)
483

MILISHTEYN, G.I.; LARICHEVA, K.A. (Moskva)
Effect of lysergic acid-.diethylamide an some aspects of the
behavior of mice and rats. Farm. i toks. 26 no.6-.753-756
N-D 163 (MIRA 18:2)

BABAYANTS, R.S.; BLAGOVESHCHENSKAYA, V.V.; VERGILESOVA, O.S.; VISSONOV, Yu.V.;
VYALOVA, N.A.; GLAZUNOV, I.S.; DRUTMAN, R.D.: RIEMPRSKAYA, N.N.;
KOTOVAJI E.S.; KURSHAKOV, N.A., prof.; IARICHEVA, L.P.; USKOVA, M.P.;
KALYSHFVA, M.S.; PETUSHKOV, V.N.; RYNKOVA, N.N.; SOKOLOVA, !.I.,
STUDENIKINA, L.A.; CHUSOVA, V.N.; SHESTIKHINA, O.N.; SHULYATIKOVA,
A.Ya.; SHTUKKENBERG, Yu.M.; BARANIOVA, Ye.F.,, red.
[Acute radiation lesion in man] Ostraia radiatsionnaia travma
u cheloveka. Moskva, Meditsina, 1965. 313 P. (MTRA 18:9)
1. Chlen-korrespondent AMN SSSR (for Kurshakov).

LARIGHEVA, I
~ '. ~. _, 16.8. - ( Bsaniaul)
Limiting ac~luracy of the asymp-trAlo of a tir'W4 .,Ila.,,~Et
of functionae Farlr 1. 77,,r. v7-4,, iv-beb. mat.
u 63 (M.MA *17~,S'l
I

1. LARICHEVA~ M. D.
2. USSR (600)
4. Rye
7o StUdyIxk9 fertility of rye seeds produced by wheat. Agrobiologiia No. 6
1952.
9. Month List of Russian Accessions, Library of Congress, April -1953, Uncl.

1, LARICHEVA, He Do
2. USSR (600)
4. Hybridizationp Vegetable
7. Productivity of hybrids as a function of conditions under which parental forms were
raised. Sei.iaem. 20 no. 1 1953.
9. Monthl List of Russian Accessions, Library of Congress, April -1953, Uncl.

IMSNIKOV, B,V., doktor sel~skokhozyaystvennykh nauk.,
A j
kand.E;el-'skokloz5,ayst,vennykJi nauk
Iate, fall sowing as a method for developing resistance to
flower-stalk fox=ation in sugar beets grown for feed purposes
in the non4hernozera zone. Agrobiologiia no.6-.791-795 11-D
C61. (MERA 15:2)
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11.-) (1 )
AUTHOR-. Larichevas V.V. _(Moscow) SOV/40-22-4-15/26
TITLEs The Non-Linear Damping of Eigen Oscillations in Sys-bems of
Arbitrary Order (Felineynoye easheniye sobstvennykh kolebaniy
sistem proizvollnogo poryadka)
PERIODICALz Prikladnaya, matematika, i mekhanika,1958,Vol 22,Nr 4,
PP 536 - 538 (USSR)
ABSTRACT- The damping of eigen oscillations of a system of second order
of the form
(1) ~* +U9 2x
is based on the fact that the damping function t~ as a function
of the oscillation speed causes a dissipation of energy. In
the present case the dissipation of energy is to take place
by non-linear dampers which satisfy the equation:
E = 102k2x
where the magnitude k is to satisfy the following conditions
2
2 k = 0 for x~> 0
Card 1/2 O