SCIENTIFIC ABSTRACT KUZNETSOVA, V. A. - KUZNETSOVA, V. I.

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• Collection: Scientific Abstracts
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• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 20, 2000
• Sequence Number: 16
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

I1 11. i ii K ~- I - I I
MMIN, M.L.; XUZMSOVA, V.A. ; MOREDVA, D.K.
- - - --" -1-- " . - ~4 -:-
The role of convaleacents In the epidemiology of dysentery. Zhur.
mikrobiol.epid. I Immun. 29 no.3:122 Mr 158. (MIRA 11:4)
11. 1z Kubanskogo meditsinskogo institute I I gorodskoy polikliniki.
(D bimIx -- )

-XUSNETSOVA, V.A.; LEVENSON, OIS.
Hashimotole otr=a in aberrant thyroid g2anda ProbX* endo-k. i gorme
6 no.6s120-121 160. -DISEASES) (GOITER) (MIU L412)
(THYROID GLAND

KUZNETSOIIA, V.k.p studwit-1; TDVa,',) ILLS
Clinical aspects of Verlhofla diseaso in chl"hiren. TrudyTadzh.
med. inst. 50:191-193 '61. (MIfa 17:8)
1. Iz kaCedry pedlat.r1i (zav. prof, V6.,. Vayl.', rukavod.!Lell raW.y
assts'LuL A.A. Tyarayeva) Talzhiicskogo gosudavii t lie nnogo atiditalnskogo
instItuta imni Abua"L lbn--,~Lno.

KUZNETSOVA V.A.1 GORLEKKO, V.M.
DeveloFment of hydrocarbon-oxidizing bacteria under anaerobic
conditions. Prikle biokhim, i mikrobiol, 1 no* 6:623-626
165, (MIRA 18112Y.
1, Inetitut mikroblologli AN SSSR. Submitted July 21p 19640

KUZNETSOVA, V.A.; KAVRIXAp L.A.
Determination of the organic carbon content in various
Mycobnoterium rubrum oultureee Prikls biokhim, i mikrobiol,
I no# W84-W JW 165, OW 18M)
1, Institut mikrobiologii AN SSSR. Submitted April 17j, 1965.

K MiEMOVA V 1, - 1, 1A . 11) a
~'U' I., p ,-, - ~- ~~t Av
Regularitiea in the davelopmo-rt of sulfate-miuc-Ing hacte-14a
in the 1) oil bearing beds of the florAcd Romashl,14no field.
Hlkroblofogii; 33 no.2014-320 14r-Ap '(4. On~,- i,7112)
1. Institut mikrobiologii AN SOSR i Taturokly nefty&ncy nauchno-
issledovatell3kiy institut.

KUMETSOVA, V.A.
Docalting of Devonian oil beds as one of factors stimulating
sulfate reduction process. Mikrobiologila 33 no.6~1003-1009
N-D 164, (mIRA 18:4)
1. Institut mikrobiologii AN SSSR*

KUZNF,TSCVA, V#A.
Algebraic meaning af the fundamental axonmetric theorems. Dokl.
na nauch. konf-, 1 no.3%94-98 162. (KmA 16,8)
(Axonometrio projection)

VI;
I
ACC -0, N I~tt AP4040526 8/0080/64/037/006/1334/13401
AUT t Kryaxhove Yu ItogovLa g Z a A* I
IToroptsevap To K*
!TITLEs Synthesis of graft copolymers of 2-mothyl-5-vinylpyridLue,
Iacrylic,or mathaerylic acid
ISPURCEs Zhurnal'prikladno3g khimii, v, 37, no. 6, 1964, 1334-1340
ITOPIC TAGSi copolymer, graft,copolymer, pyrLdine. 2-usthyl-5-vinyl-p
acrylLc acid. methacrylic acid'. poly(vinyl chloride). ftorlon,
polyethylene, potycaprolactam. Lon exchange material, current can-
duc.tive material, chemically stable material, free radical polymeri-
Izati.on
ABSTRAM Graft copolymers of chemically stable voter-repellant
polymers with electrically dissociating monomers have been synthe-
,$Lzed. Free radical graft copolymerization of 2-methyl-5-vinyl-
pyrLdine, acrylicq or methacrylLc acid on swollen films, fibers,
and fabrics of poly(vLnylcbhlorLde) ftorloiLi polyethylene, or poly-
caprolactam yielded materials with an ion-exchange capacity of
card 1/2

ACCESSION NRt AP4040526
1-3.5 mg-equiv/S. which swell In aqueous media and exhibit hipth me-
chanical strength and low electrical resistivity in the swollen
state. Films of polyethylene-mithacrylic acid copolymers retain theil
strength and electrical conductivity after immersion for six months
at 500C Ln a 402 KOH solutLoAs Orig, arts hast. 3 figures ahd 5
tables.
ASSOCIATIONt no 4
SUBMITTEW, 200o:62 ".,~~DATR ACQ* WuI641- ZNCLI 00
SUB CODIV '00 90. RN IF SOV#' 001 OTHIRs' 0OV.,
2/2

XUZN-!5TSOVA* V.P.
Phar.mCologiCnl stU(t, tif thr, phatosen-vitiziag preparation
v
ber"ino Farm, L tolu. 26 no.2019---'424' Xrl.-~p 163S (MIT?A 17s 8)
I# lab,,ruto~lya farmakolopl.l. (rl-ktw~)dl tell - kard. med. nank
Ya.l. Khadzhai) Xharlko%,-3kr4,ro

ERADMAY, Ya.l.- KUZNETSOVA V.F.
0
5
Somo pharmacological data on the action of Imperatorin.
Farmatsev. zhur. 17 no.607-63 162. (MIRA 17:6)
1. Laboratorlya farmakologli Kharlkovskogo nauchno-iseledovatell-
skogo khimiko-farmateevtichookogo instituta.

KUZIM,=Aj V r.
USSR/Chanistry Petroleum, Technology Oct 51
"ISIvnthesis of 3-Cathyl -41 -Lthyl Thlophenoj" :E~ Ya, FQutcrvz;Idyj N.F. 'liedny-Gi-a,
V.P. Kuznetsova
"Zhur Prik hhim" Vol XXIV) No 10i PP 1071-1073
Properties of alkylated thiophenes are little knoma, a fact which trakes their
identification difficult when they are sepd from petroleum distillates. Syn-
thesized 3-n-ethyl-4-othyl thiophene by condensing pentanedione-2, 3 with thiodiClycol
ether, which yielded a dicarbonylic acid. This was ti:en decarbovylized to he
final product. The product it gives indophenine reaction and forms complex. compd
with mercury acetate.
PA igoT49

ZZYNALLY, M-L; SHAPIRO, B.A.; BABAYXVA, V.A.; KUZINA. V.T.;-.KUZMSOVA, T.G.
3ome results of flooding the Kirmaki 11 horizon in the southern
depressed section of the Dazorny oil fields. Aserb.neft.khose 35
n0-10:13-16 0 '56. (MIRA 10t1)
(Bux,ovny-Oll filed flooding)

CEKMKOVA, Yelems. Lasarevza; KUSIKIN, V.A.P redak-tor; VIDMOVINA, T,N,,
rodaktorl =)WA, rodaktor.
Distortion of telegraph signals Is short wave transmission]
Iskashosila tolografaykh sigaalov prL persdache aa, koratkikh
voluakh. Moskva, Gos.lsd-ve lit-ry po voprosam eviast I radio,
1955. 43 P. (MIRA 915)
(Telegraph, Wireless)

redaktor; TEMOVINA,T.M., redaktor; SOKOLOVA,R.Ta.','
redaktor
[communications engineering; controlled quartz-crystal oscillators
and ex'citers for frequency radlotelograpby; a manual) Tekhnika
BvIazI# upravliasmys krartserys generatory i vosbuditelt dlia ch&-
stotno~o radiotelogratirovanlia,informatelonnyi abornik. Moskva,
G.os. lsd-vo.lit-ry po v6prosam eviast i rsAio, 1955. 230 P.
(MUA 9:2)
1. Russia (1923- UAA.Rt) Kinisterstva, svjazi. Tekhnichaskoys
upravleniye.
(Telegraph, Wireless)

lalij V.-
V. A. =11-1111% "On the oleration of aemiconductin,-~ triode3 in the
saturation re8ion.11 geien~3-Uc Sess�on Devoted to "Padio Day", May 19-58,
Tradrezerviz(lat, Moscow, 9 Sep. 56
Physical livoceases ocourring in a typical switching circuit with a
common base are analyzed in the saturation region.
An expression has been obtained for the resorption tire of the minority
carriers at the collector for the case of supplying a rectanCular current
ijapulse of arbitrary duration to the input. A method of measuring the
lifetime of holes in the base is proposed.

-SOV/109-3-10-5/12
AUTHORS: Kuzlmin, V.A. and Shveykin, V.I.
TITIB: on o a ansistor in t1je Saturation Region
(0 rabote poluprovodnikovogo trioda v oblasti nasy-
shcheniya)
PERIODICAL: Radiotekhnika i Elektronika, 1958, Vol 3, I-Tr 10,
pp 1269 - 1273 (USSR)
ABSTRACT: The saturation region in a junction transistor is defiaed
as the operating condition in which both the emiter and
the collector of the transistor have a positive bias with
respect to the base. This type of operation can be
observed in a simple switching circuit, such as shown
in Figure 2. If a current pulse:
-EK
MOR
is fed into the emitter and then rapidly reduced to a
value 1 .4;) , the collector current will be practically
constant for the duration of a time T this current
Cardl/5

SOV/109-3-10-5/12
Op,eration of a Transistor in the Saturation Rebion
is approximately equal to I IR This phenomenon can be
rIK/
explained as follows: the concentration of the
carriers (holes)in the base region near the collector is
larger than the equilibrium value and this results in a
;/.unction. The flow of the
positive basing of the collector j
holes from the base to the collector and their recombiuation
gradually reduces the hole concentration at tLe collector
and, after a time T , reaches the equilibrium value p,
(Figure 3). The time.-interval T can be referred to as
the storage time. An attempt is made to evaluate this
time under the following assumption: 1) the behaviour
of the holes in the base is described by the usual, linear
diffusion equation/and it is assuzed that the emitter and
collector areas are equal to 3 ; 2) the leakage current
is negligible in comparison with the diffusion current;
3) the injection coefficient y is egual to unity for
both the emitter and the collector; 4) the.duration of
the switching pulse ~e is sufficiently large so that the
distribution of the holes in the base at the ;nd of the
Card2/5 pulse is independent of Ir ; 5) the collector current

SOV/109-3-10-5/12
Operation of a Transistor in the Saturation Region
In is constant during the storagre tinle and the voltage
across the collector junction is small in comparison with
EX The problem is tackled by solving; the equation:
C) P D p p pri (1)
,3 t P ~7
with the boundary conditions expressed by Bqs.(2), where
q is the charge of a hole, D p and -5 are the diffusion
coefficient and the lifetime of the holes, W, is the base
width, J32 and J., are the current densities of the
emitter and collector, respectively. At the instant of
the termination of the switching pulse, the distribution
Po W can be found from the solution of Eq.(3), which
should fulfil the boundary conditions given by Bq5.(4).
After a time T , the voltage at the collector junction is
zero, so that the storage time can be found from the
Card3/5 Shockley condition expressed by Eq.(5). The solution of the

SOV/109-3-10-5/12
Operation of a Transistor in the Saturation Region
Eq.(l) with the boundary conditions expressed by Eqs.(2)
and theinitial condition po(x) can be represented by
Eq.(6). The condition expressed by Eq-(5) can be written
in the form of Eq.(?). From the above, it is found that T
can be expressed by:
T = -rP In 131 1.?2 (8)
In
(X
This is valid for 2 2.~10 . From this equation, it is
YW
possible to determine the lifetime of the holes, TP
from a single pulse measurement. If Eq.(8) is compared with
the corresponding formula derived by Moll'.(Ref 2), it is
found that the expressions under the loearithm are
identical; the meaning of Moll's coefficient in front of.
Card4/5 the logarithm is that it represents the lifetime T P '.

SO'7/109-3-10-5/12
Operation of a Transistor in the Saturation Region
Eq.(8) was used to determine 't p for a number of transistors
as a function of emitter current. The results (together
with the values of 'b p determined from the transient
characteristics) are shown in Figures 4.
The authors express their gratitude to K.S. Rzhevkin and
V.V. Migulin for their advice and help.
There are 4 figures and 3 references, 2 of which are
Soviet, (I translated from English) and. 1 English.
ASSOCIATION: Fizicheskiy falculltet Moskovskogo -Cosudarstvennogo
universitets, im. M. V. Lomonozova (Physics, Department of
Moscow State University imeni M.V. Lomonosov)
SUBMITTED: October 30, 195?
Card 5/5 1. Transistors--Operation

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ftm skoftaftomt Man), No-,
tiOn thc~ inL'lu--,rce oF thu saturation in dom~p-mductor trilo 'llo v-ork of

1?, 43 67848
-44)- SOV/142-2-5-3/19
AUTHOR: Kuz9min, V.A&
TITLE; Gaturation CondiLions in Transistors in the Frese:lae
of Strong Signals _11!~
PERIODICAL: Izventiya vysshikh uchobnykh zavedeniy Radiotelk-hnikaj
1959, Vol 2, Nr 51 PP 5G6 - 574 (USSR~
ABSTRACT: The author examines the limits of applicability of the
amall-signal theory under saturation conditions, es-
pecially for alloy transintors -aorking under satura-
tion conditions in case of arbitrary injection levels.
The first attempt to establish a theor of saturation

y
conditions was made by D. Moll of 1 , V,J~ * Kuz,R1in,
p
q
'V.I. Shveykin Jef Z7 and K.S.
zhev
,
~n, V.I. Shveykin
,fR7ef 27, who solved the continuity equat;ion for holez;
within the transistor base in the saturation reGion.
They invootigated the influence of a roctanGular pulse
of great duration CRef 27 and the influence of a current
Card 1/5 pulse of arbitrary dura7ion ref g on a coorrmon-base L,~/

67848
130V142-2-5-3/19
Saturation Conditions in.Transistors in the Presence of Strong
Signals
transistor switchine dircuit..The Shookley theory was
used in both papers without- examining the limits of
applicability of the smaft-sirnal theory for the satu-
ration reGion. WI.A,AbdyuI:hanov Z7Ref g stated that
the small-signal theory is correct for amplifier opera-
tion, if the hole concentration at a base ,.-,,Ith n-type
conductivity is much smaller than the electron con-
centration. The small-signal criterion for the base
current under saturation conditions iB a logic re-
sult of the Shockley theory applied to a one-dimension-
al model. ConsequenGly, the quantitative estimations
will be correct only to that extent an far as the satur-
ation conditions of an actual tran.-;istor aE;ree with
those of the one -dime ns ional model, waich is riot ob-
served with modern allay '6ransistors. 'Jith hiSh injec-
tion levels, the electric field E influences the hole
Card 2/5 distribution .,;ibhin the baoe. The calculation of this q,,/

67848
3011/142-2-~-3/19
Saturation Conditions in Transistors in the Presence of Strong
Signals
field is connected with great difficulties, especially,
if the transistor model used is not one-dimensional.
Further, noticeablo electron currents flovi thru the
junctions. For this reason, the direct solution of the
continuity equation is a ve.-j complicated task. The
author uses B,N. Kononov's method for examining the so-
called "protsess rassasyvaniyall (Translation unknown).
He discusses briefly the influence of the emitter curr-
ent on "Pereldiodnaya kharaktaristikall (transient charac-
teristics) of a transistor in a common em-'tter circuit
and the work of an "obra--hchennyy triod"(11inversed trans-
i3tor") . A tran-sistor whose emitter and collector change
places in amplifier operation is defined as an "inver-
sed transistor". The "transient characteristics" of
an "inversed transistor 11 in a common emitter circuit
is somewhat reduced with a rise of the base inDUt
current. Time constantri. of this "transient characteris-
Card 3/5 ties", obtained at high base currents for th-.ee.,PlZh
Y_

67848
V142-2-5-3/19
Saturation Conditions in Transictors in the Proezence of StronG
Signals
and tao~kLiB~tr,_msistors, are sho~-,-n ~n Tablo 1. Time
constantD-Were measurod 'by all T.Q.-4--oscilloccope
with -time marks of 1-0.1 The table
shows that the tilm conotanto dcGreaoc by not more
than 2Q,'01 compared to the time contit-ants at lo-.,; currer.-.0.
The author discimses saturation conditions of tranz-
istors in sivitchino, circizits and describes briefly an
e-xperimental investiCation. The latter had the purpose
t t-
of verifying -Vhe assumption tha he effective 'Life
time of holes remains constant during saturation con-
ditions in the presenoe of stronG siCnals. The results
of measuremonts of a PlZh t1raasi-tor in a coT:,.:.-(,n ba--e
circuit are shown in Fi,-ure 5. The assumption that
the lifetime of holes is independent of the injection
level verified cx-D:~rii.,ientall., Tile author expresses
Card 4/5 11is gratitude to 1K.S. i..'zIicvkin and -.1r.Ya. Scriatorov

678h8
0"OV/ 142 - 2- 5-311 rl-
Saturation Conditions in Transistors in the Presence of Strong
Signal
o'UBIIIITTED:
for their valuable remarks on this paper. The publi-
cation of this paper vras recoixmended by tho Kafedra
teorii kolebaniy (Department of Oscillation Theory)
of the Moskovskiy ordena Lenirxa gosudarstvennyy uni-
versitet imeni M.V. Lomonosova (Mosco,:i - Order of
T,Pnin - Rfmtp Vrivnr-yi-f7v imnni M_V_ T,r)YnnnnF:rjV) -
October 27, 1958, and after re-workinG-Warch 17,
1959.
Card 5/5

INITSKIT, Tafroim Aronoyloh; OZIMIN, Y.A.# otv.red.; BASHCHM&
M., rod.; NAR I
(Diversity reception and Its evaluation) Rannesennyi pries
I oteanka ago offektivnosti. Moskva, Goe.isd-vo lit-ry po
voprosam sylazi I radio, 1960. 49 p. (mtu 13:4)
(Radio-Receivers and reception)

9.4310 77959
SOV/109-5-3-1346
AUTHORS: Abdyuk.hanov, M. A., Berestovskly, G. H.,Kuzlmin, V. A.
TITLE: On the Calculation of Processes in Transistor Triodes
by the Charge Method
PERIODICAL: Radlotekhnika i elektronika, 1960, Vol 5, Nr 3, pp 450-45-59
(USSR)
ABSTRACT: Introduction. The usual method of calculating the
electrical characteristics of semiconductor triodes
is the solution of the continuity problem for the
minorlty carriers in the emitter, base, and collector
zones at certain boundary conditions, which depend on
applied external voltages and currents (see W Shokley,
M. Sparkes, 0. Teal, U.S. ref). Although thN is
the most universal method, It often leads to complicated
calculations. A later method (J. Sparkea, R. Beaufoy,
U.S-. ref) conaidere the semiconductor triode as a system
controlled by the charge of ourpluo minority carriers
Card 1/21 of the base zone. The present paper investigates the

C,.2580, 9.14310 77 ~;63
V/ 1 () 9 -::)' -3 - 17 /2 6
AUTHORS: Kuz1m1n, V. A., Vlnogradov, B. N.
TITLE! 111V1U0nCC Of' SOtLUP~Ition In Tnunu 1~, Lor TrIodeo on
Multivibrator Operation
1,FRIODICAL: Radlotolchnlka I eleictronika, 1960, Vol ~, Nr 3,
pp ligo-49,6 (USS11)
ABSTRACT: A method is proposed ol' calQulatlno the time for
the removal of' surplus charge carrieru from the
base of a trdrisistor-triode. It is applicable to
pulse circuits. The Influence of saturation on the
build-up time and width of' multivIbrator pulses Is*
Investigated theoretically and experimentally for
two-junction triodes. Introduction. 1. Calculation
of carrier removal time by the charge method. The.
equation of conservation of' the total hole charge in
the transistor triode base Is
Card 1/15

P. F-L ue nce of Saturation in Transistor Triodes
n Flultivibrator Operation .
dQ
Card 2/15
where q(p - p,,) di,
77-063
SOV/109-5-3-17/26
Is hole charge in
base of arbitrary volume V, exceeding the equilibrium
charge; Ipe and Ipk are hole currents for emitter
and collector; I R is recombination current. In a
previous work by V. A. Kuzlmin (Izv. MVO (Radiotekhnika)
1959, 21- 5) it was shown that in the first approximation
of determining the removal ttime, the electron currents
in the junctions can be ignored, and it can be assumed
that Ipe = lej I pk = Ik' Assuming IR = Q/Tp, where
T Is the constant lifetime of holes in the base, Eq.
(13 can be transformed to

Wr~Luence of Saturation in Transistor Triode3
n Multivibrator Operation
dQ jPG _ jpl(_ Ill,
W
Card 2/15
where Q q * (p - pj d1j1
77963
SOV/109-5-3-i?/26
is hole charge In
base of arbitrary volume V, exceeding the equilibrium
charge; Ipe, and Ipk are hole currents for emitter
and collector; I R is recombination current. In a
previous work by V. A. Kuz'mIn (Izv. MVO (Radlotelchnika)
1959, 2, 5) it was shown that In the first approximation
of determining the removal time, the electron currents
In the Junctions can be Ignored, and It can be assumed
that Ipe = Ie' Ipk = Ik- Assuming IR = Q/T P, where
T Is the constant lifetime of holes in the base, Eq.
(1~ can be transformed to

Influence of Satu ration in Transistor Triodeu 77963
on Multivibrator Operation.,~ SOV/109-5-3-17/26
dQ=_ Q
Solution of (2) for any Ib(t) with initial condition
Q(O) = Q0 is
Q (1) Q, + (1) eftP dt] (3)
If. for t- IrPthe triode changes from saturation to the
amplification region, the hole charge in the base Q(TP
can be determined with a good approximation by
1M(T
Q (Tp)
(4)
Card 3/15

Influence of Saturation in Transistor Triodes 77963
on Multivibrator Operation SOV/109-5-3-17/26
where Ik (Tp) is collector current for t -T P; /3is
amplification coefficient for circuit with common
emitter. Now, the equation for det-ermining the
removal time Tp is
7
0+
Q ~,P
1
2. Influence of saturation on procesad3 in the
multivibrator.
off 4,71J
Fig. 1. Multivibrator'circult.
,Card 4/15

Inf Iuence of Saturation In
on Multivibrator Operation
Transistor Tr1odeS
77963
SOV/109-5-3-17/26
In the -illustrated circuit the multivibrator triode
1111T/l is assumed conducting but 17IIIT, is non-
conducting. The capacitor la being recharged, voltage
at 37111T1 base dropa cloce to zero and the triodo
conducts. A part of HHT collector current flowa
to the base of =2 and bole removal of thin base
starts. While the 3:=2 collector potential remainD
close to zero., the feedback to rIrIT, Is inactive and
nml continues to operate as an amplifier. The
feedback commences only after the end of the removal
of surplus carriers from MIT 2 base, and a fast
.regeneration process starts. Thus, saturation causes
a considerable increase of the front pulse of collector
voltage of the conducting triode. The partial charge
loss by C2 during recombination shortens the flat
Card 5/15 pulse part of the closed nl-IT2, but at higher

'Influ*ence of Saturation In Transistor Triode:3 77963
on Multivibrator Operation SOV/109-5-3-17/26
saturation the multivibrator o-scillations may be
disrupted. The removal time is calculated under
the following simplifying assumptions: (1) The triode
characteristics are linearly segmented. TrIode begins
conducting at Vb = 0, and its parametero Rin' R out,
A and Cout !2:i)Gj Ckassume their constant magnitudes
abruptly. (2) The Input reslatance of the saturated
triode may be Ignored since It is considerably lower
than the external resistances of the circuit. (3)
The collector current during removal is constant and
equals Iks ~-- Ek/Rs.
5
Card 6/ 15 Fig. 2. Equivalent circuit of' a multivibrator.

Influence of Saturation in Transistor Triodas 77963
on Multivibrator Operation SOV/109-5-3-17/26
-
::a-
-C:3
A f-:-at I ~5 ]--
rill
Fig. 3. Simplified equivalent circuit of a multivibrator
during the removal period.
The-dotted outline on Fig. 2 indicates the triode 111-1T
The triode layout per above figures has separated input
and output circuits, thus simplifying all calculations.
The.capacitances C2 and A Ck can be considered parallel
Card 7/15 connected and designating C2 + ~l Ck = C"; the equivalent

Influence of Saturation in Transiator Triodea 77963
on Multivibrator operation SOV/109-5-3-i7/26
circuit per Fig. 3 Is made, which is described by Eq. A:
dU + Be., r
d,cs + Ur, 'ell "'. C., == - -
UC. + It.. r - 0;
UC. + E" - 4 Rs, = 0;
ii - i2 = 1C.; ic, C, ic..
+ 51 CH
The input and output currents are related per
ii,, (0) h (1) +i;", (t - r) h (~) d-,
0
where h(t) t/T PI). Uaing theoe equations
Card 8/15 and relation 7?.
W4-

Influence of Saturation In Tranolstor Triodes 77!;63
on Multivibrator Operation SOII/109-5-3-17/26
Ib2 (t) can be determIned. The hole charge Q0 In rIrIT,)
Moe at inoment t = 0 Is a SOILItion ol' (2) for Ib2 = ~C/
Rb2* it' the multivibrator pulse-width, while nl-TT 2'
IV the multivibrator pulse-width, while 17111-IT-1 conducts,
cquala ti, the'll
0
Usually ti > 2 and Qoe~ pA,/R b2' Substituting now
the values of Ib2 (t) and Q. Into (5), a transcendental
I'd 9/1-5 CLILlatiOn for ca.1culating Tpis derived, the solution
NEW

Influence of Saturation in Transiator Triodes 77963
of Multivibrator operation SOV/109-5-3-17/26
of which is very complicated. A simplification is
achieved by subatituting into it the mean hole life
time T .(instead of -T . and of both tirodes,.
P P T 2)
p
and expanding it under certain assumptions into a
series, of which only the quadratic terms need be
taken. Thus the following relations are derived
b +e + j,TV + ~)" _+2
TI, =TP b) (b - (1)
a-b
a
Ili. + 1(61 - Fi6T
lec,
C d
For calculating the time T Eq. (6) may be used
P.9
but complications arise because the mean base current
1b2(t) for-the removal time is not known. As an
Card 10/1-5 approximation for engineering calculations

'Influence of Saturation in Transistor Triodes 77963
of Multivibrator Operation SOV/109-5-3-17/26
21 9) 1110 (1957))
Ti = lit.
C' In
where rk02 is voltage on the collector junction of and
V2b Is voltage of capacitance C2 of the triode,I111T2
after end of regeneration process, respectively. The
charge lost by the capacitance during regeneration Is
considerably lower 'Uhan during recombination, and
therefore with good approximation, it may be written
11~, = Uc, (Tp).
3. Experiment. The purpose of experiments was
determination of T and the pulse width with respect
to the circuit elegents. Experimental and theoretical
data were plotted on diagrams. Figure 5 uhows an
Card 12/15 urrimental curve (I ) and two theoretical curves (2) and
3 - I

Inf1dence of Saturation In Transistor Triodds 77963
of MVItivibrator Ope'ration SOVI-10-9- 5-3-17/26

1w
Mc

a ,u
Fig - 5 pig. 6.
Fig. 5. Removal time vsmagnitude of Rb2~'
Fig., 6. Pulse duration vu magnitude of Rb2-
Card 13/ 15

influence of Saturation in Transistor Triodes 77963
of Multivibrator Operation SOV/109-5-3-17/26
Curve ~fl of Fig. 5 was calculated from Eq. (8), but
curve 3 from (9) and (6). The multivibrator
parameters 'were -r P1 = 9 pec, 7pz = 6 4 sec,
34,)0)% 30., Rjr = 500 Ohm; R 50, 000 ohm;
0
5A 0 R5.2 = 5, 000 Ohm, C, =OY63 pf, C
11 3 2
2XIO pf) 10 V) rk02 :~2 1 meg.ohm, Ck= 25. pf)
R = 10(4000 ohm. In Fig. 6 curve (1) is experimental,
aka curve (2) calculated from `,(10) and (11). Curve
(3) was determined without conuideration of charge los's
by capacitance C 2' Parameters are the same as before,
but C 2 =.1,8oo pf. Parameters were determined by
usual methods at base currents and collector voltages
corresponding to the circuits, and then average 'd.
Comparison of theoretical results with experiments
showing approximately 30% difference, proves the correct-
ness of the method of calculations, the difference being
caused by simplifying assumptions of the equivalent
Card 14/15 circuit and the averaging of triode parameters. There

Influence of Saturation in Transistor Triodes 77963
of -Multivibrator Operation SOV/109-5-3-17/26
are 6 figures; I table; and 6 Soviet references.
ASSOCIATION: Department of Physles, Moscow Goverhment University
imeni M. V. Lomonosov (Fizicheskiy Fakulltet Moskovskogo
Gosudarstvennogo Universiteta imeni M. V. Lomonosova)
SUBMITTED: June 14, 1959
Card 15/15

9.11310
s' oil/ I
L09-5-32:--18/P6
AUTHOM Kuz Imin, V. A.
TITLEI ~Onth~=Cal= Moh of the Pulse Duration of a Blocking
Ou.cillator With a Semiconductor Triode
PERIODICALt Radiotekhnika I elektronika, 1960, Vol 5, Nr 3, PP 2197-
501 (USSR)
ABSTRACTs The calculations of blocking ospillatoru are difficult
because the pulse formation occurs In the saturation
zone and its width Is determined by the recombination
time of nonbasic carriers. The circuit shown In Fig. 1
giveo the maximum pulse with a short leading edge, so
that the investigation of it has both practical and
theoretical value. In the present paper the calcula-
tions of the pulse width are made by a simple and more
general raethod, which can be applied to analysis of
different circuits operating In the saturation zone.
There are no limitationb Imposed on the parametex~s of
the blocking oscillator, and the load resistance Is
Card 1/15 considered. (1) Relations between pulse dura,tton and

_____On_the- -Cale U ation-of-t - 77964
e Pulse Duration 0
of a Blocking Oscillator With a Semiconductor SOV/109-5-3-i8/26
TrIode
Fig. I. Ldyout or
blocking generator.
parameters of' the circuit and triode. While
the pulse and the leading edge are forming,
the triode is ifi the saturation sta , and'the
collector voltage drops to values Mich are very low as
compared with therefore, the collector L,, winding
voltage is close to E,,, , but on the base windings it is
close to I I . The capacitor is charged by the SOUrce
Card 2/15 rV n

Oil A"he. C"'I 1c ulal, o 1, P; f 1 pr e
of 131ockingr 0~1(--.Lllafor '41LAh.
Triade
then the; basc- em-rent ".;hUe ~A-'-
continues to rise linearl,y. ThL, oonllnu~-,~ UrOJII
owing to recombination, ffe roncentratlon ef m1noritly-
carriers drop:) to r-~qld.]Jbrium; th"! tvl()fjr,~ thuf,~
to the active .bone. The oulmequent vegeneration proces.,~
starts the triode conducting. To minimizt, tho
voltage oscillation after thl~ --ind of the- pul,,Ie, a diodr!
D La Included In the circult. Th~~- equat-lon of charr~,(-
conuf,,rvation 01' 110103 in thp, b,,i3c, J.,3 us(~~,d for Intilm-,-
width calculation.
where
q
Card 3/15

77777777777~~~--
Onthe Calculatioti of the Puloe Duration
of a Blocking Oscillator With a Setnicoivluct.or Is 0 v /2(j
Triode
Is hole charge in thfz., basp of" volum-2 1.1, exce-Oding the
equilibrium charCeej Ipey I , I a ro holo currenttti of
Pk it
emItter and collector, and thr~ curr~--nt.
Experiments and theor----tlcal c,'Llcillat-lon;3 prove that th~--,
electron currents in the jiinctlons Infitience the hole
recombination time bUt Ve-ry 1.1ttle, i3ven for base currant,5
of 100 to 150 ma, and they iiiay be ignored In the firot
approximation, taking I = I , I -~ I A3jLuAng ~-I--
P e ~11 Pk , I"
usual I. P where -r Is effeetive constant hole
lifetime at saturation.,
+ I M.
Solution of (2) for initial Q(O) = Q 0 for arbitrary lb(t)
is:
Card 4/15

On th~_, Galculat-1,on of Ptjj.:;e.
or T-A-Lor-kincr -1
Urp
Q (t) IV QG (t),P"Jol e
4, Jlj!-,~~-j-l,,_Al,_,!~
p)
The begInning Of Ulf-' Pul,'3(~ flat suctlon 1:3 taken as thc~
Instant of' ,,,ei,o t1mv, and IV -- tILo the end of the pulse
corveaponding to a transition of the trlode from ,,atura-
tion to amplification. The baje hole charge with suffi-
cient accuracy is:
IN (10 -top,
Q YO
where /~ is amplif ication coeff lo lent f or circuit with
common emitterj Tap is hole llfetiirv~ duvi;i.-
Card 5/15

On ' he Calculation of' th(
of a Mocking 0,
ocillator
Triocle
Pulue Durat lon
With a
amplifleation measured at-, low inject-lon level:3 for the
usiLal direct trIode connectlon !.ii cl,rcuit *,,ilth commor,
emitter. Equation (4) 4 ', J.f the coll.,?ctov
J.,appllcablc I
f,,urvent varle3 slowly -As cojipar,~2d with the diffuslor, tlmo~
D = W le--Dp, which in thr- case for clvotiits with
common emitter. After tlt_- (.,nd nf th,11 :,,atuvation Uie'ro
remaino ,.i h0D,, In lGhe periphery of the ba~)u, wliich
is higher than the collector curvent durins, the rcmoval
of carrieri. Formula (4) does not con:31der this rhargre
which shortens the observed rr_-moval time as comnared 1vith
the calculated, especially for ta-lodes J11 and' IT6 for
collector currents above 20 ma. The final equation for
the pulse width Is:
ti - I h (f 1)
[Q~) + dl] C fillp
Card 6/15

On the CnIculaLlon (,)i* thl-, P111or- Dov;d,km K) 11
of a Blocklmr 1), -
TrIode 0.jcjj1.at;()j- Wjl~jj q'r.-ml-onduo~t(ji, .1;0,11/1Q)-5-'j-18/01~6
In many (31rculta currents 1(t) and Ik(t) are fully deter-
mined by external elementa, because the triode resistance
Is very low. The ba3e curreni, of a blocking oscillator
depends on the Input re2lutance durli-qr, the oaturatIon,
which In turn decrea3ej with Incrumoe of the base
current, so that I b(t) can be detr,-rmined only approxi-
Inately.
cla
n1p 10 91,
IT
Fig. 2. Da2ic circuit oi blocking oscillator during
Card 7/15 pulse formation,

On the Calculation of' the Pul3c Duration 77964
of a Blocking Oucillator With a Semiconductor SOV/109-5-3-18/26
Triode
The equivalent circuit of Fig. 2 Is used for deLermining
currents Ib(t) and Ik( t)' The baoe resistance during
3aturation r is assumed constant; Z'S V0Is voltage on
emitter Junction, varyIng dUl-Ing the proces3 of pulse
formation, but not exceeding the contact potential
difference. Ignoring nini V 0 as compared with and
the capacitor charge during the Interval of the leading
edge, It is found that.,
Or
The collector current of the blocking oscillator is:
(t) = jo +
+ +
Card 8/15

On the Calculation of' the Pulse, Durad,lon 'r(9,511
of a Blocking Oscillator, With a Semiconductor SOV/109-5-3-18/26
Triode
where Jo iu magneti2lne-, current at the lmd of' the leading
edge. Since at moment t = t the magnetizing current
i
EIC
- t considerably exceed:3 and the base current is
Lk 1 0
zero, we have:
E41 ti + (7)
T.-
Considering (6) and (7) and ignoring Q,,-, Equation (5) is
rewritten as.--
'r1 rCI
L, Cr I-K "rap
+
rc) -
Card 9/15''

On the Calculation of the Pulae Duration 77964
of a Blocking Oscillator With a Semiconductor SOV/109-5-3-i8/26
Triode
The above equation is tran5cendental and very difficult
to f3olve. Therefore, some further formulas are given,
which are valid for specific values of rC. 1. rO < -C p
Is a very often encountered case, Solution of (8) is.,
i'll Co.
ti 111 - (9)
A (TP -PC) (11 +
IfI
where .1p . A-.simtlar formula for rC TP'R1=
Tap
oo, is derived in the paper of V. N. Yakovlev (this
journal, 1958, 3, 9, 1167). 2. rC cloue to -U PI
tj - '(P In Vti t 11~
+
Card 10/15 fit

On Lht'.- Ca R; III," tior, Of tl-fir.~ NIIII-
(X a Blocklllg OOCII.Iatuv WIL~i 't
Triode
3. rc > T p capricIt"AlIcc.-, C h1frher
than 3;everai mtcrofarado. Thr'. vjcItIl J. j.ar , , ~j
B i:t~ , nd
T
ti
(2) Experimental re.,3ult.,3. Tne pulse wldth aas deter-
mined for different value:j of the clrcuit components,
and different triode param~eters. The mngnltude Tp
was deter,iiined from the tran.,31ent characteristic of
the "reversed" triode. Most comnlicated is the deter-
m1nation of the r-resistance of the base, because the
accumulating base charge considerably increases its
conductivity. For the determination of r,. input charac-
Card 11/15 teristics of the triode at saturation and large base

On the Calculation of the Pulse Duration 77964
of a Blocking Oacillator With a Semiconductor BOV/109-5-3-18/26
Triode
currents (Fig. 30 weve
ma
Fig. 3. Static input clial,aCteristic of semiconductor
triode ill the saturation zone.
Card 12/15
-U,

On the Calculation of the Pulse Duration 7796-~
of a Blocking Oscillator With a Semiconductor SOV/10_~-5*3 18/26
Triode
The maximum possible ba'sle T/~~Qlclt XEC/n
correupond3 to the 3teeady-otatt~ bazie current Ibo =
- EC/n T p . For example, for Ur' = 0.5 ~Lf' E~c = 10 V,
n = 5, Irp 6 ~Lsec, we get Ibo ~ !65 ma. For
and there 13
capacitances C below 0.1 ~Lf, r ; 11 = 5.

On the Calculation of the Pulse Duration 779611
of a Blocking Oscillator With a Semiconductor SOV/109-5-3-18/26
Triode.
43, 11, 1632 (1955).
ASSOCIATIM Moscow Government University imeni M. V. Lomonos*ov,
De~artment of Physics, Chair of Oscillation Theory
(Fizioheskiy fakulftet Mookovskogo gosudarstvennogo
universiteta imeni M, V. Lomonouova, kafedra teoriyi
kolebaniy)
SUBMITTEM June 30, 1959
Card 15/15

KUZIMIN~ V, Aef CAND PHYS-MATH SC;I, "INVESTIGATION OF
-fl
CONDITIONS Of SATURATION IN SEMICONDUCTOR TRIODS AND ITS
A
ROLE IN PULBE OIRCUITSs" Mosoowf 1961* (MOSCOW ORDER OF
LENIN AND ORDER Of LABOR RED BANNER STATE UNIV IM M. V,
Lomo"oBQvg PHY8 FAQ)s (KL# 3-61# 204),
56

AUTHOR:
TITLE:
PERIODICAL:
6/109/63/008/001/023/025'
D295~:P308
Kuzlmin,_V. 'A.
The cUrrent-voltage characteristic of semiconductor
devices with a p-n-p-n structure in the closed state
Radiotekhnika i. elektronika, V.8, no.1, 1~63, 171-177
TEXT: The paper gives a theoretical tieatment of 4 layer p-n-p-n-
type switching,devices for a n-type base region of high-resistance
silicon (1011cm resistivity) of say 100 - 200 A width and the re-
maining regions of lower resistivity (0 .01 -1 Dem) and much smaller
thickness. The object is to,obtain the carrier distribution and
.ithe electron-field distribution for the closed device, and to evai.
1. luate the current-voltage characteristic by relating i.t to,auch pa-
trameter8 asthe thickness' of the crystal, the lifetime of minority
carriers, etc. The equations describing_;~he behavior of holes' and Z)f
electrons in each base region are solved on the ast3umption of:.1)
zero volume charge d6nsity',- 2),'current Xl:ow.-in one -direction only,
-3) constant lif6times, 4.) efficienoy.of both emitt6r junctions
Card 1/2

S/169/63/008/001/023/025
The current-voltage ... D295/D306
equal to unity. The following four cases are dealt with separately:
small and large injection level'in the p-type base and small and',
large'injection level in.the n-type base. Calculated electron,
hole and field distribulio4s are plotted for a total current den-
sity of 50 a/=2 and for fL hole-currezit-to-total-current ratio
equal to Oel, The holo distribution has a..minimum, the position and
depth of which depends on the base width and diffusion length. The
potential differencea across the junctions are evaluated and prove
to be of opposite sign and,close in absolute value. The voltage -
drop across the n-type base region is shown to increase exponenti-
ally with the ratio of the ba3e width to the diffusion length of
minority carriers; it is independent of current intensity kabove
10 a/cmz) and -0.1 - 0.2 v. There are 3 figures*
SUBMITTED: February 5., 1962

3/109/63/008/002/027/023
D413/D308
MTHOR: ISU-Z'Min, V.A.
TITLE: Contribution to the theory of the voltage-current
charactcristic of p-n-p-n semiconductor devices
PEPUODICAL: Radiotekhnika i elek-trottilca, v. 8, no. 2, 1963,
351-352
T L%T: In an4lyziN the differential itnDedance of 4-layer
devicen in the negative -MGLGtance region, 'I'lackintonh oAained _,n
e(p,.at~_on from Miich it follows that the rlope dll'/(~-l -4 - W at the
tur-n-off current. The author writes down the current t1irou-1-i tile
central junction j2, differentiates it to oitain the (.1iffcrential
;~ipe(lancc, and chows that 11ackintosh's fonnula only follows provided
d'! /d1j; - 0, where Ico is the leakage c-ai-rent aci-oss j2. ~i-ice
CO/ 2
fact this quantity ir4reases when the bias on he juzziction is
s-aa!-L, becoming appreciable in magnitude, zhe conclusion derived, ~)Y
" 1~ tu= L
,
-,-.c' intoah is erroneouD, and methods- of deter-minia,-, .-of, current
on this principle are inaccurate. 'rhe author thar"ks V.I. Staffeyev
(,'a--G' 1/2

S/109/63/008/002/027/028
Contribution to the theory ... D413/o')G3
for discusadoa, of the problem. lljer(~ ara- 2 Ifigur,-s- Thc most L-n-
portant ::nglish-language reference rcads a!- fol-lo-ws, 1-1:.
46, 6, 1958, 1229.
SUJI,171".L. October 16, 1962

13,
ACCMSTOT; YM, AP3003720
193/1198
AWHOR. Xur,
T=i : Dyne-mic properties ot_p~zn-p-n type devicen
SOURCM R.-xdiotekhnika i elektronika,, v. 8,, no. 7, 1963, 1193-1198
TOPIC TAGS: controlled rectifier dynamic properties, switching voltage,
collector-emitter junctiou, gate signal, shunting resistance, controlled
rect5fler collector, collector-emitter, emitter
ABSTRACT: Results are given of an experime&.al study of the depen4ence of
switching voltage of a p-n-p-n controlled rectifier on the speed of the voltage
rise across the collector-emitter (up to 10' v/sec). A brief theoretical
analysis was made of the dependence of a current passing through the device
on the shape of the volUge across the collector-cuAtter junction (i.e.. on the
parameters of the four-layer structure). Lxperi=ents were carried out with a
oweep generator which generates a sawtooth voltage vith 8=Plitudes of 0 to 5 C-0 v
and durations of 1 to 100 4aec. A total of 25 D"-",5 controlled rectifiers
investigated, and the dependence of the "dynvtmic" 3vitching voltage on the
up rate of the applied voltbLge was recorded. The rcGultr, jhowed that in a
---,-Card 1/2.

-0--i N-9 :AF~,~3720 ,r-
conniderable portion of the rectifiers s%dtching voltaAer, (a) change but little
dur-irg on increane In the applied-voltage buildup rate. 7his ia due to the
stabilizing action of the lealragr cf the e-mitter junctlr-m as vell as by a alilgbt
dependence of the amplification factor on the current. '-t Is suggested that the
rectifier switching voltage in ve-rious circuits ccruld be stdLuilized by Mc=3 or
a shunting resistance connected acroas the emitter junction. In the case of Glowl
variation of a control signal, stabilization can be obtained by connecting a
capacitor or a capacitor and a resistor to the Junction in parallel. A small
number of roctifiers exhibited an increane in witching voltage Vith an increase i
in the buildup rate of the gating signal, owing to shunting action of an emitter
junction capacitance and to an increase in the dynamic evitching voltage above its.
static value. Orig. art. has: 2 formulas, 6 figures, and 2 tables.
ASSOCIATION: none
-SULMITTED: 1%Tun62 D= AcQ: omug63 EITCL: 00
SUB CODE: SD DOW SOV.. 000 OMM 000
Card 2/2

L 18389-63 FzS
ACCESSION NR: AP3003731 S/0109/63/008/007/1279/IZSO
AUTHOR. Xuzrxr.1n, V. A.: MocWkina. 0. R.
TITLE. Method for reducing the cutoff time of p-n-p-n semiconductor devices,
SOURCE: Radiotekhnika i elektronika, v. 8, no. 7, 1963, IZ79-IZ80
TOPIC TAGS: p-n-p-n semiconductor device, D235 semiconductor device
ABSTR,ACT: Practical 4-layor semiconductor structures include one wide
(100-200-miczan) n-type base. The authors cut the switching time of the DZ35
device to one-fifth by reducing the lifetime of minority carriers in the wide base.
The latter was alloyed with Au atoms. Other character istics of the device, were
not impaired. Orig. art., Ms: I figure. 3 formulas, and' I table.
ASSOCIATION: none
SUBMITTEDi 28Dec62 DATE ACQt 02Aug63 &NCLt 00
SUB CODEi GE NO REF BOVS 001 OTHERt 001
C,rd

ACCESSION NR: AP4043675
S 10 10 96 4 /00 9 /008 /1410 /1415
AUTHOR: Kuz'mins
TITLE: Turnoff time of p-n-p-n devices
A
OURCE: Radiotekhnika I alaktronika, v. 9. no. 8. 1964, 1410-1415
S
TOPIC TAGS: thyristor, thyristor turnoff time,. pnpn controlled rectifier,
controlled rectifier, semiconductor rectifier/D235 diode, DZ38 diode
ABSTRACT: The physical processes transpiring in a thyristor during turnoff are
considered. This formula is developed for determining the turnoff time:
t to n T- 1n (I/I,), where tV is the hole lifetime, I is the forward current prior to I
turnorf. I, Is a residual current. Forty DZ35 and D238 silicon diodes with rated
currents of Z and 10 amp, respectively, were tested by the negative impulso
method. the
It wag found that: (1) The turnoff time Is directly proportional to
lifetime of holes in the wider base and to the logarithm of the forward current; itf
!Card I/Z

ACCESSION NR: AP4043675
is possible to determine the lifetime by measuring the turnoff time; (2) The
majority-carrier charge does not decrease through the turnoff reverse current;
j.hence, the amplitude-of the reverse voltage,' not exceeding the static breakdown,
voltage of the reverse branch of the current-voltage characteristic, does not
noff current., if the reverse voltage does exceed the above breakdowns
affect the tur
voltage, the turnoff time rises abruptly; (3) The turnoff time rises soAewhat with.
an increase in the rate -of -rise of the positive voltage dU/dt, which apparently is i
due to a smaller residual charge remaining in the base at the turnoff moment.
"The author wishes to thank Ye. Is Bruk for his help with the measurement worke
The impulse generator was developed by Ve V* Chilikin, Orig. -art. has I
6 figures, I formula, and I table. aa
ASSOCIATION: none
SUBMITTED:'. 2lMay63 ENCL: 00
.SUB CODE: EG NO REF SOV.,~ OOZ OTHER., 005
:Card 2/2

li I y A

-b"GA

I - - -- -.- I-. - . - _- -- -- -- -- -
RUMMOVA, V.A.1 XRYAZHEV, Yu.(;.; RCGOVIN, 7,A.; TOROP TS"EVA , LIN'.
Synthesis of graft copolymers of 2-rmthyl-5-vinylpyridine, acrylic,
and methaarylic acids. Zhur. prikl. khin. 37 no.6:1334-1340 Je 164.
(MURA 180)

BOCHVAR, A.A.; KUZNETSOVA, V.B.; SERGEYEVp V.S.1 BUTRA, F.P.
Self-diffusion in the alpha and beta phases of uranium. Atom. energ.
18 no.6t601-608 is 165. (NIRA 18s7)

SOV/32-24-9-12/53
AUTHORS: Lukashovap Ye. N., Baram, N. U., Kuznetsova, V. G.
16
TITLE: Method for the Analysis of the Copper-Borofluoro Borate
Electrolyte (Metodika analiza borftoroboratno-mednogo elektroll-ta)
PERTODICAL: Zavodskaya Laboratoriya, 1958, Vol 24, Nr 9, pp 1067-1068 (USSR)
ABSTRACT: At this institute (no name given) the copper separation is
carried out from electrolytes containing copper-fluoro borate
Cu(BF 4)2' free fluoboric acid HBF 4' and boric acid H 3BO 34 In
the laboratories of the institute, a method for the control
of these electrolytes was developed. It is based on an
electrolytical separation of copper from the solution and a
subsequent hydrolytic splitting of the fluoboric acid by means
of boiling with magnesium sulfate. In this process, sulfuric
acid is formed in a quantity equivalent to the content of fluor-
ions. The sulfuric acid can be titrated with a base (indicator
methYl red). The initial borio acid, as well as that produced
by hydrolysis, can be titrated with mannite or Invert sugar
(indicator bromothymol blue). The analysis takes 3 - 4 houray
and yields good results. A table of the results obtained and the
Card 1/2 analytical procedure dregiven.

---GRIGM#Ylff D.P.1 =XKMtg T.G.
low sxhi~itlirbh' of minerals'in the Nineralogiml Haseum, Sap, T"ma
min. ob-va 87 no;lt69-75 158. 13;SO
1. GorWy *nor L kaledra minsralogii IenirgradakVo gornago
inatitutas
(LoniWad-gineralogioal =seuxs)-

(S-0
fill
10
14
IF.

KUZ10TSOVA, V.G.; RAZUHOVSKIT, N-K,
Soliffility of carbonates in hydrochloric acid as a diagnostic sign
in their determination. Zap. Vaes. min. ob-va 88 no.ltllO-112 159.
11. (KIRA 12:3)
(Carbonated (Hineraloa)) (Elydrochloric acid)
I (Mineralo&7. Determinative)

GRIGORMT. D.F.j KOLIOMSKITv V.D.1 KUZNETSOV.% V.G.
Compilation of a mineralogy of meteorites* Meteoritika no.20tI72-
1 177 161. (Meteorites) (KM 140)

"Tnvestigation of Self-Diffusion Processes In Uranium and its Alloys."
report submitted for 2nd Intl Conf, Peaceful Uses of Atomic Energy, Geneva.,
31 Aug-9 Sep 64.

ACCESSION 11Rs-AP4027216 S10286164100010*1006810066 - -
AVMORs Xazantzov, Yeo Aws Vishnit4kiy, A. Lol Ouser, X* I,$ Kusnotsovas Ve OtS
Norolov, U. V.
TITLE: Mothod for the electrochemical grinding and polishing of articles in a drug,,.
(Class 0 23b; 48as 105 No. 161191 fran 6 February 1963)
BOURCEs Byul. Izobrete i tovarn. zuskovs no* 8, 1964, 68
TOPIC TAGSt grinding, polishing, electrochemical grinding#,elootroohemioal
polichings abracive
ABSTRACTs Is Method for the oleatrochomioal grinding and polishing of articles in
a drum has the apooial feature that, for the purpose of intensifying the process and,
reduoing the work area, the very articles being prooessed are used as 'the elaotrodexo
being soparated in the drum or vibrating contauer into two parts by a perforated
separation partition, with the electrochemical dinolution carried out by mama of
alternating current realizing a constant circulation of tho alsotrolyto, and vdth
the current source being switched off during finishing troatmoute
Zo Method for electrochemical grinding and poliChing of articles in a dr= described
Card 1/2

ACCESSION-IrRi
in paragraph I has the special feature that the articles to be processed are loaded
simultaneously into the drum with an abrasive material. llbatraatorfs n6tas We
is a ocmpleto translation of tho origiru%l artiolool OrIge art# haoi no graphioat
AZSOCIATIONs none
SUB.14ITTEDi 06Fob63 DATE ACQt 22Apr64 EXCLI 00
SUB CODEs SD, IE REP SOVt 000 On=$ 000
Card 2/2

L 3h66-66 E74T(m)/E?F(n)-2/T/LWP(t)/V,-IF(b)/I~IA (r) r~51JD/MtWW
~ACCE'SSI'ON NR: APr-ol6929 UR/0089/65/018/606/0601/0608!
621
.039-5112-32
04
V. S.
:AUTHORS: Bochvar, A. A.; Kuznetsova, V. G.; Sergeyev,
~Butra, F.
]TITLE: Self diffusion in them alpha and beta phases of uranium4
'SOURCE: Atomnaya energiya, v# 18, no. 6, 1965, 601-608
'TOPIC TAOS: metAl diffusi6 ura-nium, met-al phase system, actl vationi.
energy
;ABSTRACT: This is paper-no. 333 presented by the SSSR at the Third
'Geneva Conference in 1964. The authors investigated by an autoradi-
iography method the dependence of the rate of self-diffusion on the
:crystallographic direction in the two low-temperature phaaea of
1uranium, Barl1er data on the (jelf-diffuolon In thcoo, phaseD are cqn-1
;tradictory. Apparatus was developed in which the self-diffuslon
;coefficient was calculated from the rate of change of the a activ ty
;on the surface of the sample during the course of annealing, as well

LA66-M
1,'ACCESSION'NRf---AP5O16q29'_
!as by autoradlography of the surface of the sample. The investiga-
;tIons were made on single crystals, polycrystalline samples with larg'
~perfect grains., and polycryntalline samples with imperfect grains.
~The test procedure and the method of calculating the seir-diffusion
)coefficients from the change of a activity arid from the autoradiograms
:are described. The results for a-uranium are listed in Table I of
:the Enclosure. The results for p-uranlum are similar to those for
a-uranium., but the experimental conditions did not make it possible to
:establish the directions with the maximum and minimum self diffusion
coefficients. The coefficient obtained for the temperature rign e 700
;__750C from the variation of the a activity lies in the range* ~2-6)
X 10 cm sec. The results demonstrate convincingly the presence
:of anisotropy of self-diffusion In the a and phases of.urlinium.
'Orig. arr.. has.~ 7 figures., 4 formulas, and 1 table.
ASSOCIATION; None
SUBMITTED: 00 ENCLt 01 SUB CODE-. NP, MM
NR REF SOVi. 001 OTHERs 010
Card
2/.3

L 3h6&66--.-----------
ACCESSION XR: Ap5ol6929 ENCL40SURE: 01

Table l@ Values of the self-di ffusion coefficients In
d1freront crystallgraphic directions In alpha,-uranium~

C,Yst llogr. Self diffusion
.6ra.i.0 nu4ber direa io doeff. ca
2
8 010 1 g; I O~ 14
021 3 - 10-14
fl~ ,

4 - I
7 110 JO-13
6 , 15.3 1,6-10-13
4 tit 1.8-10-13
out
'Card

I- - KUZNETSOVA-,--V-9-- 1 0-i-- NIKOLLnVA7,- N.V.
Interdepartmental conference on tranacription of geographical
names. Vent.LGU,16 no.18:124,427 161. (MIRA 14: 10)
(Names, Geographical)

KUZNSTSOVA, V.I.
n PO " byl alcohol in making mash patterns. Obm. takh. vpyt.
I no,q;3o-31 156, (MIRA U710)
(Vinyl alao'hol) (Textile printing)

KUZNETSOVk V 1. kmW& tekhns naukj red,; KUZ*MINA) P.P.) kand.
geoir:'nauk, red.; PUSHKAREVA, V.F., kand, fiz,-mat.
nauk, red.
[Materials of the Interdepartmental Gonference on the
Problem of Studying Evaporation from the Land Surfacep
August 1-51 19611 Materialy Mezhduvedomstvenmgo sove-
shchaniia po probleme izueheniia ispareniia o poverkh-
nosti sushi, 2,5 avgusta '1961 g. VaIdai, Gos.gidro-
logichesIdi in-tj 1961. 263 p, ~AIRA 17:2)
1. Mezhduvedomstvennoyo soveshchaniya po probleme izu-
cheniya ispareniya, 1961. 2. Gosudaratvennyy gidrologi-
cheskiy Institutj Leningrad (for Kuzlmina, Pushkareva).

ALEK5ANDRGVj N.Lj GEnNp NaTes; SHULIZH-IITKO, VOM.; ALEKSANDROV. P.M.;
,TPAr INSKIY, V.A.; KAVERINA-FIRGA12, K.G.; KUZNETSOVA, V.I.;
BEWR, M.L.; VORONIN, Yu.S.
Search fo~ effective chemical vaccinos against some zoonoaes.
Report NoJiDevelopment or a chemical plague vaccine and its
experimental test in animals. Zh~r. mikrcbiol., spid. i im=jn.
4 no.066-71 Ap, 163. (MIPA 1715)

BENEVOLENSKIY, Aleksandr Mikhaylovich; ELI~LS-OYYL~ V.I.p -' red.
(soonoynny mineral apringo] Soano-vokil ininerallpyl lotoch-
n1k. Izd.2., dop. IAroolavl', VerXhno-Volzhokoo Izd-vo,
1964. 45 P. (KIRA 170)

--- KUZN.~--T:30VX,- V.-L
"Clinical Aspects of Chronic Tulareaia," pages 256-259 of the book "Treat-
ment of Infectious Diseases," Moscow., 1953
Presented 6 March 1953 (Moscow at the All-Union Conference on the Control of
Dysentery sponsordd by the Ministry of Public Health S=.
Translation No. 474, 19 Oct 1955.

MOROZOVA, M.G.-.TROFIKOVO X.A*;MAKSIXOVA, T.N.;TURONOK, L.I.;ARWROVA, A.I.-,
OLLXM# T~G*,-UKDVXNXO, Z.L.;KUZNZTSOVA, V.I.;DUSHKIU, X.M.;LMIX,
L.G.;DUMAR', S.K. , suaawggx~
I ....
Viachealaw Theilleviah Aliakritskii. Arkh. pat., gookya 15 no.2%
95-96 Mar-4r 1953. (CIXL 24:3)
1. Professor Vyaoheslav Vasillyevich Alrala~itskiy..Is a Doctor Medical
Sciences &ML Read of the Department of Pathological Anatoz7 at Voronezh
Medical Institute.

MMSOTAO Y.I*
Mynamics of uwonditioned vascular reflexes " an index of the
effectiveness of bromine and caffeine In early pregnancy toxemlas.
Akush, I gin. noe3t25-31 )~7-Je 154. (KLRA ?tB)
1, Is kafedry skusheretva, I ginekologii (say. prof. I.T.Millchanko)
34mby:hevskogo seditainskogo insituta I Instituta okhrany materinstva
i dot tva (dir. prof, T.A.Lositskaya)
OMOMIM therapeutic use,
Oprogn: tozoolas, off* on vase* unconditioned reflexes)
(CAMM. theraroutio use,
Oprogno toxesias, off. on vase* unconditioned reflexes)
(PRWMGY TCXNMUB# therapy,
*bromides & caffeine, off* on vase# unconditioned reflexes)
*=Conditioned, vase. reflex off. of bromides & caffeine
lu there of progn, toxeslasl

KMWSOVA V I. Cwd of Ned Sei - (dies) "Vascular reflexes and breathing durtng
toxicosis of the first half of prepawy wtdah is treated by bromine ad caffeine,"
Xwbrahevs 1957p 19 pp (hybraboy OUto Medioal. Institute, Chair of Obatetrico and
Gynecology,. Chair of Normal Pbysiolomr),. 200 copies (KL,, 29657P 93)

CHIBRIKOVA, Ye. Vs; KUMTSOVA, V.I.; JAMIOVA, LP.; DUDKOVA, V.K.
Rapid metgo-d-fo-rlhe detection of Vibrio comm in water and In wAshings
of objects in external environment by using fluorescence microscopy.
Zbui. mi~obi6l.' eiM i lmiii.-,29 no.12;52-56 0 158. (NIRL 11:12)
1. Iz Gosudaretvannogo nauchno-issledovateliskogo inatitlita epidemic-
logii L mikrobiologii Yugo-Vostoka SSSR. (wMikrobw).
(VIBR10 COMMA,
detection in water, luminescence microscopic method (Rua))
(WATER, microbiology, I
Vibrio comma$ luminescence microscopic detection (Ike))

KMMMCVAI, V. I., Candidate of Mad Soi (dies) -- "Vascular reflexes and respira-
tion in toxicoses of the first half of pregmnoy treated with bromine and caffaine".,
Tjfa,, 1959. 17 pp (Bashkir State Mad Inst im 15th Anniversary of VLKSM),, 200 copies
(KL,v No 21P 1959s 119)

- KUZIMOVAL!. L
Clinical aspeota of trichinosis. Lech. infekts. boll. no.4:285-288
1609 (TRICHINA AND TRICHINOSIS) (MIRA -105)

SUESAREV,, Pavel levgenlyevich, zael. deyatell nauki mof.; AVTSYR, A.P.,
prof., otv. red.; BMIUOVj L*Ioj profop red. ideceased)j AIEKWiDROV-
SKAYAp M.M.p red ;'-TSIVILIKO, V.S., red.j GERGER., E.L.p red.1 1L'11Ap
LsIsp redoj KAZAKOVA, P*B., red.; KUVNETSOVAj-V-i--,-red.,-, SOKOIDVA-
LEWOVICH, A.P., red.; BELICHIKOVA7
., Y-U*S., tekhn. red.
[Selected works) Izbrannye trudy. Moskva, Goo. izd-vo mod. Iit-ry
Medgiz,, 1961, 462 pe (MIRA 24s7)
Is Chlen-korrespondent AMN SSSR (for Smirnov)
(Nmowa)

BEKKMo M.L.; KUZNETSOVA, V.I.1 KUTSEMAKINAp A.Z.
Study of the im=ogenicity or nualooprotoid rractiono of the plague
microbe. Zhur. mikrobiol., epid. i immun. 32 no.9:134 S 161.
(MIRA 15:2)
1. Iz Nauchno-ionledovateliskogo i protivochumkogo inatituta
Y.avkaza i Zakavkazlya.
(PLAGUE)