SCIENTIFIC ABSTRACT KUZNETSOV, A. V. - KUZNETSOV, B. A.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000928110020-8
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 20, 2000
• Sequence Number: 20
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

KUZNMOVP A*V*j insho; LLIW# AV,, inzh*
Mwa"ZO-wl
Precast concrete at industrial construction projects in the
Central Ura2s. Prom. stroi. 41 no.8:24-26 Ag 164. (MIRA 17s11)
1, Glavereduralstroya

ZAYTSEVj Guriy Semenovichl g!~~Algksandr Y*oylT~jq4j
CHUGASOV., A.A... podpolkovnik, red.; YjiASAVINA, A.M.,
tekhn. red.
(Smolce screens] Dymovye aredetva i dymoobrazuiushchia veshche-
stva. Moskva,, Voen.izd-vo H-va obororW SSSR, 1961. M182 P15:2)
(Smoke acreens) ( RA
a

BMISOV, V.A., kand.takhn.nauk; rJznTsOV. A. Tas. inzh.
Iloproving Pavements mde of marlaceaus raterials. Avt. dor. 23
no.4:10-11 Ap 960, (MIRA 13:6)
(gsk) (pavement)
I
.44

- - ------------
ACCESSION'KR: AP4009471 9/0032/63/015/006/0824/0826
AtMIOR: Kry*zhanovskiyg B.P.1 Kumnsteov, A*Yaq Pafomovs, L.A.
TITLE; Reflection of semiconductor layers. of silicon monoxide doped with silver
and gold in the long wavelength region of the spectrum
SOURCEt Optiks I spektrookoplyal v,15, no.6, 1963, 824-826
TOPIC TAGS: heat filter, infrared mirror, Infrared reflection, silicon monoxide
copting, silver doped silicon monoxide, gold doped silicon monoxide, semiconductor
coating
ADSTRAM Thin coatings on the surface of glass and other materials characterized i
by selective, ref loot ion in the infrared are attracting the attention of investigs-
tors. A number of metal oxide coatings have peon investigated and found to be
characterized by a high reflection coefficient in the infrared region. In view o
the possible utility of such coatings for heat shielding purposes it was deemed of
interest to Investigate the reflection of semiconductor layers of silicon monoxide
doped with silver and gold, prepared by simultaneous vacuum evaporation of the sub-
stances. The fact that SiO (Ag,Au) layers can be deposited at relatively low teu-
Card ]+)~-

AP4009471
peratures makes it possible to use not only glass but also luc14 and similar plas-
tics as the substrate. Such layers are semitransparent in the visible part of the
spectrum and have a surface conductivity of from 10-1 to 10-2 Ohm-1. Experiments
showed that, while transparent in the visible region, semiconductor SLO (A&,Au)
coatings an lucito have a high reflection coefficient In the Infrared region. The'
reflection coefficient monotonically increases from 0.3 to 4 p and then levels off
in the 4 to 14 p region. As in the casa of semiconductor layers of SnO2 and In203
thu rof loction coof f iciont depends on the electric conductivity: it increases with
increasing conductivity. The conductivity of the investigated SIO (Ag,Au) layers
.was varied by heating at 150-1700. The transmission and reflection curves obtained
for some SiO layers are shown in Fig.1 of the Enclosure. There is some similarity
between the electro-optical properties of SLO (Ag,Au) layers deposited on under-
coatings of antimony, load, bismuth and other metal oxides with the properties of
gold and silver coatings as reported in the literature. The results of the present
experiments indicate that semiconductor coatings of silicon monoxide doped with silir
ver or gold can be used as heat shielding filters and infrared mirrors when deposi-
ted on glass or plastic substatoa* Orig.art.hust 2 f Iguren.
2/j
v Card

-f
AMN nV, V. L.; V.~.; RAUHGARTAN, U.K.; BEMIN, V.D.; BIR=OT, I.K.;
BIRYUKOV, S.M.; BIA3MIN. S.I.; BOROVOT. G.A.: BULAV. X.Z.; BUBAXLW,
N.A.; VMTSAYM, B.A.; TOW. G.M.; VaDW, B.A.; VOSHCHrNIK. A.P.;
GAIATIONOVt V.D.j'kands tekho, nauk; GAMaNt U.K.; GILIRML&T.
T&.]).v Imn&. tekhn. - ; GIMMUM, M.K.; GLIMOV, P.S.; GODZS, B.G.;
GOBACHW* V.N.; GRZHIB, B.V.- GEIKUWV, L.T., k3nd. a.-kh. nank;
t
1.74.; DANILOV. A.G.; DMITRIYIV. I.G.; DMITRIYMO,
Yu.D.; DOBRMOTOV, DO),; DUBININ, L.G.; DUNDUKOV, M.D.; ZROLIK.
A.P,; 7103011CH, D&K,; ZINARAV, Tej.; ZINASKOV, S.V.; ZTJBRIK. 1C.M.1
KARANOV, IJ.; KNXWW, S.N.; KMJMYN# N*M.; KOHARUSXITg V,T.;
KOSEMO, V.P.; KCMINISTOV. D.V.; KOSTROV, I.N.; X:OTLTARSKIT, D.M.;
KRIVSKIY' M.N.;;~~ A Ila-; 1,111111111OV, N.I.; Ia&WV, V.G.1
0
0~
V
V.
P.
LnMAMW, V.P. XLTSKIffIGH, K.F.; HRLINICHMMO,
K.I.; MEMLIVICH, LR.; MIXBAYIOV, A.V., kand. tekhn. nauk;
XUSI7WA, R.N.; NATANSON, A.V.; NIKITIN, M.V.; OVES, I.S.;
OGULINIX, d.R.; OSIPOV, A.b.; OSM, N.A.; PZROV, V.I.; FIRYSHKIN,
G.A., prof.; PIYAIMOVA, Te.V.; RAPOPOT, Ta.D.; (W. N.P.;
ROWOV, M.P., kand. biol. nauk; ROCH3KQV, A.G.; RUBINCHIK, A.M.;
R1301MMIT. V.S.: SA A.V.; SZMWSOV, V.A.,- SIEWO, P.M.;
SINYAVSKAYA, V.T.; SITAROTA, M.N.; SOSNOVIKOV, K.S.; STAVITSKIT,
TO.A.; STOLYAROV, B.P. (deceased]; SUDZILOVSKIY. A,0.; SYRTSOVA,
Te.D., kand. tekhn. nauk; YILIFIMIY, V.P.; EUTURIN, A.D.;
TSISIWSKIY, P.M.; OFEWASOT, M,I.; CHIEWS1W. A.A.; CHUSOVITIN.
N.A.; SE30ZOPAL, A.O.; SKICEM, P.A.; SHISHKO, G.A.; SHCHIRBINA,
I*N,; 3WILI, Y.P.; YAKOBSON, A.G.; TAKUB07, P.A., ARKHANG ISKIY,
(Continued on next card)

OWNSYBY0 V*L~ ... (cou-%-.vTr,:,ud) C,,Zd 2.
Ye.A., re'veenzont, md.; AKMJTIY, A.N., ral.; BAMMOT,
YU.S.', retuetuau).-, ref..; BARABANOT, V.A., red.; BAMTHR,
P.D., retsenzent, red.'; BORODIV, P.T., Imne.. `w-al,--ba. uauk, rel-viensent,
red.; VAIMSKIT, LL, lCaud. toldma. retsonzent., red.-,
GR M M 1 UV .0 V. R - . Im r d. t e Kai. vmk, r et e .4 -a na i it. , r si -3 . ; GTB IN, H. If
reteement, rod.;'GTJD&Y3ff, I.N., roe.; T3RHOLOV, A.I.,
kand. tekha. aauk, ralvennan"U, r3C.; KAMULOVe BeFs, retria=qe,
red.; KRITSKIT, S,N., doktor tt)d!n. wmik, reteoz.7.ew~, ra&.; Irm,
V.V., *--atsenuent, WKIN, V.7., Totsellma'at., r~,i.; WSKIN, Z.D.,
reteenuent, zed.; MATRIROSSOr, A.Kh., rLtski-A-_t3nt, mmiamff,
D.M., retaa=ent, rod.; MOKRLI, M.Y., doltu:- teldia. ~wuk, ralaenzent,
red. ; OB Ov. S.3.,- retcenr--)~i'kl, L-ee..; FBTW.&Wl, P.F., mteenzent,
red.-, POLTAKOV, L.M., rellooment, rad.; RUMIAPT-alff, A.M., .mteenzent,
red. ~, RYABCIIIKOV. Ye.l., re&.; STASMaZ, N.G., ratilGu-
Zent, red.; TAXANAYN, P.P., rO`,OOO=U=t, ree..; TiUMOVSKIY, S.V.,
prof., doktow tekhn. uazk, roe...; TT777C 1, R.F., I-etoon-
Zent, red.; FJDOWV. Te.M., re-senvint. rad.; SHBT=OV, M.N.,
reteenzent, red.; SHMLKOV, H.I:, retoDn-lumittv, rod.; ZmX, S.ml.
[deceased), akmdamik,'glvvm~7 red.; INASO, G.A., lmi:d. tekhn. nucak,
red.; FILIMONOT. N.A., red.; VOLKOV, L.N., GRISHIN, M.Me, red.;
ZHUIR. V.D., prof., do!ezor teldin. neid., re(l.; KOSTRff, I.R., red.;
MIMM. V.P., red.: WMV, VH., )mnd. tekhn. uauk, red.;
MMILYIDV. A.V., Imnd. tekhn. uuk. rad.; PZTWI, G.D., reet.; BAZIN,
N.V., red.; SOBOLEV. V.P., md.; YMNGXR, B.P., zail.; FRITGOM,
(Coutitned ou no%+. card)

ANDON'Ylff, V.L..., (continued) Card 3.
Te.F., red.; TSTPLAXOT, V.D. [deceased], red.; KORABLINOT, P.M.,
tekhn. red.; GIMN, U.N., takhn. red.; XACHRROVSKIT, N.V., tekhn.
red,
[Volga-Don; technical aooo~nt of the construction of the V.I. Ieuin
Volga-Don Navigation Canal, the TSimlyansk Itrdroolectric Center,
and irrigation systems] Volgo-Don; tokhnicheakii otchet o*stroitell-
etTe Volgo-Douskogo sudokhodnogo kanals, imeni V.I. Lenina, Ms.
lianekogo gidr6usla I orositellm7kh soorazhenii, 1949-1952; Y piati
tomakh. Moskra, Goo energ. izd-vo. Vol '1. [General structural
descriptions] ObehZee opisanie soorashenii. Glay. red. S.IA. 21r*.
Red. toma M.M. Griehin. 1957. 319 P. V61.2. [Organization of con-
struction. Specialized operations In hydraulic sugineering] Orga-
nizatsiia, stroitel'stvin. Spetsialln7e eldrotekhuicbeBkie raboty,
I... - ,. 'J~' C . I (Continued on next card) ./ ..'

ADONI13V, V.1i.... (continued) Gard 4.
Glav. red. S.IA. Zhuk. Red. tome, I.N. Kostrov. 195B. 319 P.
(MM 3.1:9)
1. Rmogja (1923- U.S.S.R.) Ministerstvo elaktrootantaii. DYuro
te'khnichookogo otcheta o stroitellstve To o-Dona. 2. Chlen-kor-
respondent Akademli nauk SSSR (for Aldmtiu~. 3. Deyetvitellwy
chlen Akasmii stroitelletva i arkhitektury SSSR (for Grishin,
Razin).
(Tolga Don Ganal-Hydraulic engineering)

14(6) SOII/91-59-5-12/27
AUTHOR: Kuznetsov, A.Ya., EnGineer
TITLE: Automation of Work of Electric Engines of Pumping
Installations (Av-tomatizatsiya raboty elektrodviga-
teley nasosnykh ustanovok)
PERIODICAL: Energetik, 1959, 1Tr 5, pp 23-24 (USSR)
ABSTMICT: This article briefly describes an automatic electric
pumpinG, unit 500 v of an unidentified TETs, used
for removino the condensate from the tank, depic-
ted schematically in FiGure 1. It has two magnetic
starters with two block contacts, IT, switch, 500/36
transformer, 36 v starter coils. This unit is said
to be reliable and easily operated. There is 1
circuit drawing.
Card 1/1

AIRKSODROVp Alskmandr Petrovjoht-m=ISOVg L12k 9 Takoirlevich; WZEL'p
N.P.f inzh,t red,j LEV=, L.P,p red,; LEBEIZV-A-t-r.V-,-t teldm,
red,
[Praoticeo of the'oonbtruction Of'the-Stalingrad Hydroelsotrio
GES. Moskvaq Orgenergostroig 1960. 57 p. (MIRA 14%7)
(Stalingrad Hydroelsotrio Power Station)

KUZNETSOVq A,Ya.
Construction of the Stalingrad hydroelectric stations Oidr,
atroi. 31 no.3el-6 Mr 161. (KUU 14t4)
1, MavW inzhener Stalingradgidrostroya.
(Stalingrad Hydroelectric Power Station)

SEVASTIYANOV, V.I., glav. red.; KUZNETSOV, A*Yaoj zam, g1tive red.;
MIKWLOVj A.V.p doktor-Ukkr--tAU,1 zai~.-glav. red.; ABRAI..OV,
Yu.S.j, red.; IVANOV, M.A., red. j PKROVI G.D.0 red.; RAPOPORT,
Ya.D.s red,
[Volga Hydroelectric Power Station (22d Congress of the CPSU);
album of drawings] Volzbekaia gidroelektrostantsiia imeni.
XXII Btlezda. KPSS; allbom ~..hertezhei. Moskvao Gosenergoizdat.
Pt'l* (Basic structures] Oanovnye sooruzheniia, 1962. 62 p.
(MIRA 15s5)
I* Moscow. VaesoyuzW provektno-izy"tel'skiy i nauchno-
inaledovatellskiy institut"Oidroproyektllimeni S.YaoZbuk.
(Volga Hydroelectric Power Station (22d Congress of the CPSU)-
Design and construction)

I
KHASKRACHIKH, L.P.; SOKOLOVp B.A.; CENKIN, Ye.M.; SEVASTIYANOV,
V.I., glav. red.; KUZNETSOV, A.Ya., zam. glav. red.;
MIKHAYLOV, A.V., qpkt6t"tekhn. nauk, zam. glav. red.;
ABRAMOV, Yu.S., red.; IVANOV, M.A., red.; PETROV, G.D.,
doktor tekhn. nauk, red.; CHEMIN, A.N., red.
[Vol a H dro 1 trio Power Station (22d Congress of the
U1 y e ec
CPSS ; n1him of engineering drawing] Volshakaia gidroelektro-
stantaiia im. XXII allezda KP53; allbom chertezhei. Moskva,
Gosenergoizdat. Pt.2. (Organization and the carrying out of
installation and construction operational Organizatsiia i
proizvodstvo stroitellno-montazhnykh rabot. 1963. 74 P.
(MIRA 16:11)
1. Moscow. Vsesoyuznyy proyektno-izyskatellskiy i nRuchno-
issledovatellskiy institut "Gidroproyekt" im. I.Ya.Zhuk.
(Volga Hydroelectric Power Station(22d Congress of the CPSLO

MIKHAYLOV) Andrey Vasillyevich; KUZNETSOV, Aleksey Yakovlevich;
ABRAMOV, Yuriy Semenovfc-h-;-M=' rKOT,-W-.T.-, -red-.
[Construction of the Volga 11ydroelectric Power Station
(22d Congressof the CPSU); experience in planning and
carrying out the construction work) Stroitellstvn 1r,lzh-
skoi. gidroolektrostantsii imeni, XXII sliezda KPSE ; opyt
proektirovaniia i proizvodstva rabot. Moskvay 12d-VO
"Energiia," 1964. 486 p. (MIRA 17:6)
5z,

iCRG:
ACC NRs Ap6036867'
AUTHORs Ku=otsov. A* '4k*
none
SOURCE CODEs UR/0147/66/000/004/0142/ol5o
TITLE: Estimation of fatigue durability of aviation engines on the basis of defects
found during repairs
SOURCE: IVUZ. Aviatsionnaya tokhnika, no* 4, 1966, 142-150
TOPIC TAGS: mechanical fatigue, durability, piston engine, aircraft engine,
statistic analysis
ABSTRACT: Statistical methods of treatment of data 6~tained during the periodic
inspections of parts of piston engines permit the evaluation of reliability of there
parts. The basis for this evaluation is the observation that the distribution of
fatigue durability follows the logarithmically normal law of the form
f (I) e
By establishing experimental3,y ike'varianoe in this expression by periodic inspection
of parts, the probability can be calculated for the absence of defects after a certain
period of service, Several examples of application are given. For instance, it is
ird 1/2 UDC. 62!

ACC NR3 AP6036867
shown by the Fizher F test that improvement of crankshafts by nitridIng is
statistically significant. Orig. art. hass 4 figures, tablegs and 8 equations.
SUB COM 13, 01/ SMM DATEs 13JuI65/ CRIG RM 010

" M11!T SOURCE COOB; UR/0237/60/000/012/0007/0009
AU'DIOR: Kuznet~ov, A.Ya.; Kruglova, A.V.
-------------- 4~_-
O.RG: None
TITLE: Investi ation of.ionic exchange reactions on glass by optical methods
SOURCE: Optikoinekhanicheskaya prmyshlennost',' no'.12, 19600 7-9
TOPIC TAGS: -opt :ics, optic film~,-optic fi'lm property, optic-Coating, optical coating
property, optic Coating exchange reaction
.ABSTRACT:' This-is an investigation of ionic exchange reactions on -a glass surface
by optical,vi*$~ods.Optical methods were used because of the negligible amounts of me-
tals invblved. 29 ction tud'stabilization of a 1001
perimentation methods included produ,
thick S 1*02"' 7.* coiltaining film by etching Tyriex glass' with U'NO at elevated tempe.
ratures$'followed by drying over 'P.05, Reactions with ~hoden'metal salts were then
Completed,*follo Wed'by conalti*ningof the surface in hydrogen.at 400 OC to reduCe..th,
catlions.to theirlatomic state. The spectral transparehcy of the glass was then meisu-
red, and the Curves studied to determine the nature and the relative concentration of
the cations in the film. Experimental results confirmed the decisive influence of the
surface reactions upon the film's transparency. The action of hydrogen upon glasses
previously processed with metal salt solutions causes a decrease in the spectral tran
parency curve ordinates. Each metal has.its own characteristico Reactions of mutual

ACC NRt AP6002819
replacement of cations were also studied. 7be processing of Pyrex glass, previously
acted upon by AgNO , by NaNO restores the initial high transparency. Processing,
AgNO -processed glais by CuCAO 3)a produces a transition of the Ag charLeteristic
curvg into the Cu curve, It is concluded that hydrogen atoms on the glass surface
can be easily replaced by mono and divalent metal cations. Mutual exchange capabili
of metal cations depends upon their nature and valency. Monovalent and different va-
lency cations enter the reactions most easily, Divalent cations accumulate together
in the surface film. Orig. art. has 5 figures.
SUB CODE: 20/ SUBM DATE; 120ct60/ ORIG REP: 006/ ..-0TH REFs 001
Card

0
0o 2
sod
00
d-46,14-mom xij~ be dw mAw
W U111CtAQW. A- VOL K"WM &
(1941p= 1w dm Acomity v Vol-M) of
Ow gig- - won #a em. g%mww w" vp to
t4
60"Zor =m.(mw7Wt*142VcmcdrwWr
do 49 No A + "bw of wi X
too &.0101,101116 1 at NJ% OW
6.1 1 dwan for A vu to
SAWWOuraw ="O=
A
m . The Mkd"
A
=t A 7=1 46
iby be Scomd. Lam tM
Frutom Vb,
slow $11noll"
Islaw Nif eiv sod
6 AT 10 a I
It
'ft. X, lot 1~
a o 00 see sees
(-*a-o- - I M - I*- a- 0 0 6 0 0 0 0 0: o.,44-1i
use
It of 9 A 0 v
2-&o 0 0 0 0 0 0 0 46 0 a 0-0 0

c"t
iz~~
67N7w
;7c;6"o"ifts to tmww--~--
I
. 4
v")

Mf I
Wed d md toookke d knip ad&* at tbe oW
d JIM 1. 0. Md%&w. A. Va.
K wd V* - A. Rrkbem (&at* Optkg Ion., Louln.
A& smo. 36 cad. of
~ 0 a" A) bwboim =meow v4 o--
h
s
law.
mcuw wbas so of 6m
is ---- I bf*=Ulw Ig
For
ITqNseddualmdoWuLdiscadAmps.
U vbO4O,mdII%OO(V)md*dmibrbuW*Idw
comL b ebmw v I to 41 JkO. AkA, at TKN is
pma twomp a a".
70 mW 230*.
Is an one. kW log avid. in a ft= ob~yW. The
data dww dmi do obselm ~M On ce a Sim am
somwW JmwwW by wmM ammo, of torWp catimc
The nod. b dm mW kdwodmd7 of We ustan of
tb*jkm~WeIdwad4W94d*. Momatweafth*aMed
olift cum Its kimewt oil kW amm. for wbkb the caW.
4r0" sbw*. U"d Boadw

JCIJ'7
Kuznetsov, A. Ia. and Hellnikova, I. G. Electroconductivity of glasses of the
system K20 - SiR20
State Optical Inst.
Leningrad
February 233 1950-
SO: Journal of Physical Chemistry, Vol. 74, No. 10. October 1950o

KUZNETSOVO A. Ya.
PA 174T91
um/xloctricity - 40 . Cooductivity of Glass Jan 51
Electrical Conductivity of Glasses of the PbO --
SiO2 Systemp" K. S. Yevstroplyev, A. Y&. Kuznetsov.,
1. G. Hellnikove
"Zhur Tekh Fie Vol XXI, No 1., pp 104-111
Finds dependence of elec cond of subject glass
upon temp is expres'sed satisfactorlly by follow-
formula: log K=
a b/T.
Ssta~llsbee that cond Increases with FbO content
in measurements carried out in temp range 60
300000 'Ift6itittid 23'Dec 49,
17k'191

4
7-1
USM/Chandstry - Electrical Conductivit7 of Glances NOV 51
"Mectrical Conductivity of Glaw9va oC tho SY;5t(-M P.9L,-U-,O 1. j. hal Inik-oval
3
K. 3. Yov3trop 1"v, A. Yu. Katneteov, Leningrad
"Zhur Fiz Khin" Vol XXV, No 11, pp 1313-1327
Investigated spe elec cond of PbO-B 0 gla35es (111bO content 21.4-69 molar %) for
te-1ps 170-4000C. Found formula sads?ying dependence of elec cond of glasses
on tomp. Found that logarithm of oleo cond increases with higher PbO content in
glas5es. Dincuesed variations of elec cond in dependence on PbO content.
Calcd activation energy of glastes; established that activation energy it hiA
increasing with higher B203 content.
( r-A #7: 8+13
PA 196T16

KUZNP,TSOV, A. Yap
USSR/Physics - Electrical Conductivity, Olass Aug 52
"Surface ElectricbI Conductuvity of Glags in a Humid Atmosphere.," N. G. Gutkin',
K. S. Yevstroplyev, A. Ya. Kuznetsov
"Zhur Tekh FizI1 Vol 22, No 8., pp 1318-1324
Measures surface cond of a number of tech glasses in relation to humidity and temp.
Results showed that surface cond in humid atm rises by a factor of 3-5. and at w nst
temp the max rise occurs in a humidity range of 30-80%, With increasing teM thi
cond risesi,the thermal coeff varying from 2 to 4%. Received 2 Oct 51.
226T98

17- 1_6
USSR/Ch em.Iistry Olass 21 Jul 52
"The-Effect of Thermal Treatmeni on the Elec-
trical Conductiyity of Glasses," S.P. Zhdanov,
A. Ya. K4zaetsov
"Dok Ak'Nauk'SSSR" Vol 85, No 3, PP 587-589
The elec cond of annealed glasses is always
greater than that of calcined glasses. In sodium
borosilicate glasses this is apparently due to
the greater thermal stability of the NA-0-Si bond
than of the Na-0-B bond and predominance of the
let type of bonding after annealing at a high
temp. The cond due to the Na-0-Si bond is greaten
Presented by Acad I.. V. Greb_ephchikov 23 May 52.

CLU V qT
I- 2C-54
fruiface cond n " of glanes In hmold &I&
Zhur. Fix. Ithi". 27, 657-
0 io-lh The sudam cond. A. of
Wished tar-ir.C.C..
201 and ", rnp., both at rclalivt humid)' (11) of 00%
'N
It was 10 thnes and 40-50 timarcps great at 11-80%.
980/c, mp. Wistu Alan. ut 910, were "in a chem. way
deposited on a quott sur(sce, ko Increased with the 0*9-
oc"(S)of the film (10-4 toB X AtJ:8 0-#
Cm. and 20% k. was 10- and 2iX 10-0 at H as
98%. resp. The op. wad. k,1& WAs 6 X 10-4 to 10-4
CM.'-'. ie. greater than that o(dbtd. H*01 the ifffero-ort
is alullauted to the rJectmkivattle surface toad, P
betweenO.7anall.3XIO-scan.aaae. produee:donavKtalso
leaching with 0.6 AcOH- their k At 200 and H aa, 98
was 5 x 10-16 tolo-11. ffigher 4dues of k, weg , Moos
-when the hydrolysis products of Stan were mat dhWved
away, Le. when ght"m were kept In a humid atm. Thus -
films of S between S and 6 X 10-f cm. were producedi thtli
kwef 7 X I0-nto1O-'and&k,1& Pei 10-6toOXIO-41cm
at2o"and96%. The tamp.coeff. of k,awas2%.l,e els-
tical with tW id sq. odris. ftface cod C006 Ithb
Vadocts of sWsce hydrolyslf~ . t I Biberimid

t . I P---- A-CA~= IS - " - - - I

f0.11, 11w 141111, d SUIPIP, nhum-ife V.-t1i ii
-~,l wti
~:gh pofoi;ty, 'the dead-burn Of coaric y c-- till Ir"j, 5.,tkili t::!n I-C i~u-
ilT lnilkXAL (Fe,Oj, Whilrh -1
prowd bj Ille addaiosi of 2 0-2.5 of
C. TIve minciaiiier inlplcw.,-i th-- .111.1
mahv., it po 'Al! tk, obtlin plitcl (11m cull',11mr,
.-Ale foi ~~ " I
uble-)

Chem
Q,~M~IET X&-A.Yaes Doc.Sci -- Wiss) "Surface Electrical madxzx
Conductivity of Glass."[Len], 1956, 19 pp (State order of Lenin
(-L # j� 046 APY'j wwrkJ 17W (11 hrlej) I
Optical Inst im S.I.Vavilov), 120 copio iY111-1-1 49-57, 1'0)
I
- 7 -

Aj c
USSR /themical Technology. Chemical Products 1-12
and Their Application
Silicates. Glass. Ceramics. Binders.
Abs Jour: Referat Zhur - Khimiya, No 9, 1957, 31528
Author : Ku~zetsov A. Ya., Kruglova A.V., Kryzhanovskiy,
9-.-- P-.
Title : Heating of Glass- and Ceramic Ware by Means of
Semiconductor Films
Orig Pub: Zavod. laboratoriya, 1956, 22, No 8, 993-995
Abstract: It is recommended to utilize as the heating
element semiconductor tin dioxide. Films
consisting therefrom can be produced by treating
the heated article with an alcohol solution of
stannic chloride or with stannic chloride vapor.
C ard 1A

USSR /themical Technology. Chemical Products 1-12
and Their Application
Silicates. Glass. Ceramics. Binders.
Abs Jour: Referat Zhur - Khimiya, No 9., 1957., 31528
Semiconductor films adhere well to the surface
of glass, porcelain and other ceramic materials,
and are characterized by high mechanical dur-
ability and chemical stability. Specific con-
ductivity of a f ilm 1-3,V- thick Is of about
1000 ohm-l cm-1. As concerns conduction the
film is similar to an intermetallic compound.
The films are stable to the action of electric
fields: they withstand p to 5000 V/Cm, current
density of up to 30 a/mm~ , wattage of up to
15 W/0;2. Use of semiconductor films in heating
of porcelain beakers,, porcelain funnels, quartz
crucibles, glass funnels and heaters made it
possible to raise the efficiency to 6o-94%.
C ard 2/3

USSR /themical Technology. Chemical Products 1-12
and Their Application
Silicates. Glass. Ceramics. Binders.
Abs Jour: Referat Zhur - Khimiya, No 9, 195T, 31528
Simplicity of the processes of film deposition,
low cost of the starting products and prolonged
stability of the coatings, indicate the necess-
ity of their extensive utilization, as heating
elements, in various technological fields.
C ard 3/3

K_ L, ~ /tV '-Y 1;~.
AUTHOR: Kuzneteov, A. Ya.
TITLE: Methods of Applying Coatings of Semiconducting Tin Dioxide
for Heating Glass and Ceramics (Metody naneseniya pokrytiy
poluprovodnikovoy dvuokisi olova dlya nagreva stekla i
keramiki)
PERIODICAL: Zavodskaya Laboratoriya, 1957, Vol. 23, No. 1, pp. 90-92 (U.S.S.R.)
ABSTRACT: The author describes the method of preparing the glass or cer-
amic veseel for applying the coating. The glass contains alkali
and it is lea8hed with nitric acid and subjected to temperatures
of 450 - 500 . This will improve the transparency of the coating
and make it adhere more firmly. An apparatus is described for
applying a coating of SnG12. The solution for applying this
material contains a number of chemicals and the reactions which
result in an ultimate coating of SnO2 and Sn are explained.
Directions are given for preparing and applying electrodes to
vessels treated in this way. There are 3 references, of which
I is Slavic.
Card 1/2

Methods of Applying Coatings of Smiconductirg
Tin Dioxide for Heating Glass and Ceramics
ASSOCIATION:
PRESENTED Br:
SUBMITTED:
AVAILABLE:
Card 2/2

AUTHORS: Kuznetsovp A.1a., Fafcmova, L.A., Kalinina, L.M. 32-12-40/ 71
TITLE: Ceramic; Semioonduotor Heatezz (Keramicheakiye poluprovadnikovyye
nagrevateli).
PERIODICAL: Zavodskaya Laboratoriya, 1957, 7ol. 23, Nr 121, pp. 149-j-1498 (USSR)
ABSTRACT: As ocramio semioonduotors produoed from lead dioxide Possess high
electrio conductivity, an investigation was oarried out with a view
of finding out what Influenoe is exercised by admixtures to this
material of various semioonait,3tive oxides and some of their acm-
pounds with respeot to conduotivity properties. The highest degree
of elootric conduotivity at room temperature was found to exist In
the composition oontaining 96% sno., 2% C-aO and 2% Sb,-.03. Such a mix-
ture was pulverized in a porcelain grinding machine and put through
a sieve. The lead dioxide was previously heated red hot at 1100-12D00
whereas the oopper oxide was used in form of fine crystalline -powder.
This mixture of powder was kneaded together by the admLx~nxe of 5%
of water to a pulp and formed into a briTuette. The latter is dried
for 2 hours et a tamperature of 1300P after whidth it Is Ti-tokly
heated lip to a temperature of 1OOOQP exm! heated rea hot at a slW.,y
Card 1/2 rising temperature (.500 per hour) up to 14500. Cooling was carried

Ceramic Semiconductor Heaters 32-12-40/71
out together with the furnace while tht current waz switched off.
The caramic samiconductoru thus obtaincvl h&T-a high eleatron oonduo-
tivity. It was found that the addition of coirper oxide arul antimony
oxide to the lead oxide diminishes its resistance but, at the same
time, increases its heat oonduotivity. Such heater3, which are pro-
duoed on the basis of lead oxide, can be used at tempers. tharms of
12000 - 13000 (at short intervals of applioation of up to 15001).
There is I figure and I Slavio reference.
AVAILMLE: Library of Congress
Card 212 1. Semiconductors-Heaters 2. Ceramic-3

'0V/120-53-4-15/30
AUTHORS: Kxyzhanovshiy, B. P.
TITLE:A Themially Stable FJ Llm of Tin Dioxide and Its Application
(Termostoykaya plenka dvuokisi olova i yeye primeneniye)
P,F!',RIODI,",'AL: Priboryj i tekhnil~.a ekspcrJ_!-.cnta, 1958, Nr 4, pp 76-7?
(USSR)
ABSTRACT: A method is described for producing thermally stable
semi-conductinC films of tin dioxide on ceramics and fused
quartz. In distinction to the films described before which
are stable only up to 300-35000, the thermially stable films
do not chanse their eloctrical properties up to 800-8500C.
The high teml)erature stabilit-y is achieved by the intro-
duction of an antimony impurity and subsequent high tem-
perature processing. Ther.-jally stabie semicondunting films
may be successfully used as heatin- elements in laboratory
practise and industrial manufacturin- processes. There is
U Z
1 fi-Ure and 7 references, 6 of which are Soviet and 1 English.
Q 0
ASSOCIATION: GosudarstverLnyy opticheskiy 'institut (State Optical
Institute )
SUBMITTED: October 19, 1957.
Card 1/1

15(-4 SOV/72-59-11-5' 0
LUTHOR: Kuznetsov, A. Ya., Doctor of., Chemical Sciences
TITLE: Propertion of a Silicie Film
PERIODICAL: Steklo i keramika, 1959, Nr 11t PP 17-20 (USSR)
ABSTRACT: As can be seen from the paper by I. V. Grebenshchikov, T. A.
Favorskays. (Footnote 1), this film mainly consists of S1021 and
forms due to the influence of water on glass. Table 1 gives the
thickness of films used in practice. Some boron silicate glassov
of the system Na20-B20 3- S102 attain a silicic layer of up to
5-10 mm, and serve as initial materials for the manufacture of
porous products and of quartzoid, as can be seen from the papev
by I. V. Grebenshchikov, 0. S. Molchanova (Footnote 2). S. P.
Zhdanov, D. P. Dobychin, A. K. Fogodayev, L. S. Yastrebova, V. Be
Molchanov investigated the structure of the films. The dependc-.-Xe
of the glass porosity on its chemical composition is given in
table 2. Regarding boron silicate glassesq the paper by D. P.
Dobychin, N.N. Kiseleva is mentioned. The dependence of the
relative humidity on the pore dimensions is shown in table 3.
Card 1/2 Further, the chemical properties, mechanical strength,
Flit
XA~

Pruperties of a Silicic Film
SOV/72-59-11-6/18
protective effect, optical properties, adhesion, and chemical
composition of the films are-described. Table 4 gives the
diffusion coefficients of the ions in the film, and table 5 the
chemical compositions of the films. In conclusiong the author
states that the silicic film changes several surface properties
of the glassi In some cases, it is advisable to produce a film by
artificial means, namely by treatment with acid solutions. There
are 5 tables and 5 roferenoesp*4 of which are Soviet.
Card 2/2
41"N.

5M 4) S(1'1/80-32-5-4Z/52
AUTHORS: Kuznetsov, A.Ya., Kruglova, AN., ]Cryzhanovskiy, B.P.
TITLE; Films of Semiconductive Tin Dioxide With Raised Conductivity
PERIODICAL: Zhurnal prikladnoy khimii, 1959, Vol 32, Nr 5, pp il6l-1163 (USSR)
ABSTRACT: Transparent semioonductive films of tin dioxide on glass are widely
used in aviation, sea and land transportation, photoelectric and elec-
troluminescent devices, etc. They are prepared by treating glass heated
to 600 - 65000, by alcohol solutions of tin tetrachloride, or by treat-
ing glass heated to 4000C by vapors of the products of hydrolysis of
tin dichloride. The films have a resistance of several hundred ohms.
For films of about ten ohms the thickness of the film must be increased,
which deteriorates the transparency, or the electric conductivity =at
be raised. This can be attained by adding pentavalent metal atoms or
fluorine atoms. The introduction of NH4F in the amount of 3 - 10 weight
% into a powder of SnC12 yields best results. Pyrolyti treatment of
the glass increases the specific conductivity to 3 - 105 ohm-' - cm-1
The film has a thickness of 0.25/1 and a resistance of 10 ohms. Its
Card 1/2 transparency is improved.

Filins of Semiconductive Tin Dioxide With Raised Conductivity SOV/80-32-5-42/5-2
There are: 1 table and 5 references, 4 of which are Soviet and 1
Engliala.
SZ,-3~L =: JUIY 10, 1958
Card 2/2

5(4)
1UTHMt KUznetsoV# 1, rat 5"/76-33-6-31/"
TITLE: EleotrooonduoUvIty of ailioic-aoid rilms on Glass I
(Blektroprovodnod' kramnezemistykh plenok na. stakle. I)~
PEHODICALs Zhumal fixiahaskoy kb-ImUO 19599 Vol 33, Nr 6, pp 1374-1377 (USM)
AESMOTt By a reahtion of -the glass surfwja with the air mirWrs, a porous
Siorfilm is.produced, the poras of shLob are fillel with the
hydrolysis products (Ref 11. A film made of chemically pure SiO2P
the pores of Iddoh =a fIlled vith solutic-ns of a 3ertain
ooncentration'or with waterv is most slaIlic- iv ibig 13m es't) properties
end atrao-tures'Such films-ware applied to samples of melted quartz
of ethyl silioate solutions, and then heated to 500-6000 for a
complete evaporation of organic impai:i-ties (16-f 1). In an
atmosphere drIad with -P-0- the samples*with these films show a
Z 59 -18 .1
very low eleotroaonduotivity)~(-10 n ). In a molst atmosphere,
the value ') ant
~ rises rapidly and attains a const amount in 40-50
mirvates, (Fig 1).' With an inoreas0-fr. air maistu-ra, Y5 also rises
(Fig 2). The isothermal lines of the eleotzvoonductivity show no
Card 1/3 hysteresis, Let. the SiO27film. dGes n3t reunt with the moisture.

Mectroconduotivity of Silioic-acid Films on Glass I SOV16-33-6-311"
From the known film thickness and X., it is ascertained that the
speoifio eleatiooonMotivity Y. in the first approximation does not
depend on the film thicknesso is s, Y. risee linearly with the film
thiokness (Table 1). The value X of au-SiO27film, the pores of-1hich
are completely filled with moisture, exceeds -that of pure water by
2D-30* This is apparently oaueed by phenomena of a capillary super
conductivity as it in observed in fine-porous diaphragms. Thus, the
conductivity of the 5'02-f"mo depends on the SiOrskeleton (which
weakens the conductivity) on one lumd, and on Ue additional surface
conductivity (which raises the oonduotivityy on the other hand.
Similar observations can be made on optical glass TK-5 which-was
exposed to an intense destruction by acetic aoidj as however,, finer
capillary pores an formed here, the capillary condensation already.
takes place at a lower air moisture (Table 2). As, in the beginning,
the capillary Pores are'filled With the diluted medium, glasses of
different compositILon haver in the beginning, the Same X S-values
(Table J);',with timet howe7er, the cations diffuse from the interior
of.the glass into the film, and the X-value rises. As the diffusion
processes slowly fade out, the surface elsctr;:con&-,cti%-Ity. attains,
Card 2/3 with times a constant valU** There ara 4 figureb, " tables, and

Elmotbrooonduotivity of Silioio-aoid Films cc Glass I
reforenaes, 4 of whiob are Soviet.
SUMTTEDt Dsoember 4, 1957
Card 3/3
SOV/76-33-6-31/44

5 W; 15 (2)
AUTHOR. Kuznetsori A. Ya. (Leninp~ad) BOV/76-33-7-8/40
TITLE. Electrical Conductivity of Glasses of the System Li 20 - sio2
PERIODICAL: Zhurnal fizicheskoy khimii, 1959,, Vol 33; Nr L PP 1492 - 1494
(USSR)
ABSTRACT. Television and electronics require glasses with high electrical
conductivity (E), especially with an (B) of about
10-10 - 10-8 SI-1 cm-1 at. room temperature, Increasing (E) of the
above glasses is obtained by increasing the concentration of
alkali ions since the latter are very mobile within the silicate
strueture of glass. As lithium, contrary to other alkali ions~
d;es not reduce the strength of glass, it is particularly in-
teresting. In the present ca8e~ the author measured the (E) of
!I glass samples the Li 0 (1) content of which amounted to
2
149 - 42.57 mold- (Table). Besides, the glassts contained chem.-
ically pure lithium carbonate and powdered crystalline quartz.
The glasses were melted in corundum pots 10 cm 3 large, and the
samples were drawn out in the form of glass wires at 1200 - 1400o
Card 1/2 (in order to prevent orystallization). Their (E) was measured

Electrical Condustivity of Glas3es of the S;7stem SOV/76-33-7-8/40
L4 0 - sio2
by the method of compenBation (Ref 2) within the temperature
range 80 - 3500 (Table). Results showed that the glasses under
investigation possessed high (E) and attained values of up to
11 _10 - 11 .1 -1
10 10 .6 em approx tely at t (I)-ocntent of
8 - 42 mol%~ Their (E) varied exponentially with the zomposi-
tion, and the Isothermal lines indi--atea an abrupt break in
the part, in whioh lithium disilicate appeared. Li - S'. glasses
may form the basis for manufaoturing glasses with high ele-,-
t-ical conduativity for industrial purposea. There ara 1 fig-
ure, 1 table., and 6 referenaes, 4 of whiQh are Soviet.
SUBMITTED: December 4,, 1957
Card 2/2

5 (4)
kUTHOR: Kuznets (Leningrad) sov/76-33-8-8/39
. - tinx"~
TITLE: Change in Electroconductivity of Glasses on Crystallization
PERIODICAL: Zhurnal fizicheskoy khimii, 1959, Vol 33, lir 8, PP 1726 - 1729
(USSR)
ABSTRACT: Changes in the electroconductivity (E) on crystallization may
be due to two factors: a structural reorganization of the sub-
stance in the course of the phase transformation, and a change
in the monolithic structure and dispersion degree of the sub-
stance by which the values of transition resistances at the
grain boundaries change. In order to determine the influence
of these factors,, the (E) of glasses of the following composi-
tiona was determined: Na 2O-Sio 29 Na20 -231 02' PbO-SiO,; and
their products of a complete crystallization. Various crystal-
lization experiments showed (Table 1) that in all cases only
one phase was separated which corresponded to the silicate in
question. The change in (E) is due to the transition of the
glass to the solid phase. In case of exothermic crystallization,
the strength of the chemical bonds is increased as well as the
Card 1/2 dissociation of cations in the transition to the solid phase.'
4

Mange in Electroconductivity of Glasses on SOV/76-33-8-8/39
Crystallization
It is stated that the increase in dissociation energy
(E - E cryst - E ) and the crystallization heat change in
nee flas
the same as Table 2). A reduction in (E) on the complete
crystallization of glass is due to the solidification of struc-
tural bonds and tbe increase in the cation dissociation energy.
Experiments showed that a considerable reduction in (B) is the
consequence of the separation of crystals of the meta- or di-
silicatep while an increase in (E) is noted in case of separa-
tion of Sio 2-crystals (Table 3)- In partly crystallized sub-
stances it is virtually the glass phase which conducts the
electric current. The character of the change in (E) in the
crystallization process is determined by the chemical composi-
tion of the solid phase separating out. There are 1 figure,
3 tableag and 7 references, 3 of which are Soviet.
Card 2/2

4,
S/181/60/002/01/07/035
Booe/Boll
PERIODICAL: Pizika tverdogo telat 1960, Vol* 29 No. 19 pp. 35 - 42
r2?00
OTHOR: KusnotsovP 1. Y&O
-W-MFAPP~
TITLE: Semiconducting Tin Dioxide
TEXT: A brief desoript_kon is given of syntheseep properties, and ranges
ft^ IPM
of application of -2=W the methods developed render it possible to in-
crease the electrical conduotivityllof tin dioxide (up to
d . 3.103 ohm-l.cm-1) greatly and to obtain this product in the form of
foils and pressed finished parts. An increase in the electrical conduc-
tivity of no 2 was achieved first by a strong disturbance of stoichlo-
metry in the direction of the excess metallic tin and, sooondlyg by
introducing impurities# Thin conductive layers were produced in the fol-
lowing manner on various materials (glaust crystals, ceramics, oxidized
metals).by the first-mentioned method: 1) by oxidizing the tin applied
to the finished part in the air and at high temperatures; 2) by treating
Card 1/4

Semiconducting Tin Dioxide
8/181/60/002/01/07/035
BOOS/BO11
the finished part with tin chloride Vapors- 3) By means of the hydro-
lysis of Sucl 4-solutions in the presence of reducing agents. A further
increase in conductivity was attained by introducing impurities being
capable of replacing tin and oxygen atoms in the SnO 2lattice. They
were introduced in the form of NE 4P and SbCl3 . The conductivity of the
layers was increased up to d w 5-103ohm-l.om I by partial substitution
of the elements of the SnO 2 lattice. Investigation of the properties
(Pigs. 1-7) showed that thin layers of semiconductor tin dioxide have
& high conductivity and transparency, and that they can be used for a
strong increase in the conductivity of transparent materials. The
pressed products are high-temperature heaters. The steady values of con-
duotivity at high temperatures were obtained by the introduction of
Sb-9 Bi-, and Ta-atoms into the SnO 2 lattice. These admixtures which
have the ability to replace tin-atoms were introduced Into SnO 2 powder
in the form of chlorides or oxides. From this maseq samples with the
desired form were pressed and sintered at 14000C. By adding small
Card 2/4

81250
Seaiconducting Tin Dioxide 9/181/60/002/01/07/035
BOO81BO11
quantities of compounds from the elements mentioned, it was possible to
obtain a heat-resistant material with a conductivity at 2000 of
2 1 -1
10 ohm- .0m (Fig. 8). By a joint introduction of admixtures a number
of rules were established: 1) an intense interaction between the ad-
mixture and the lattice of the basic material begins during the thermal
dissociation of the admixture. 2) When introducing admixtures into via-
cous-liquid substances it is expedient to add smaller amounts of easily
liquefiable oomyounda.*3) In oxide semiconductors of n-type conductivity
(SnO22 T1029 N'203 ) it is expedient to bring about the metal excess by
introduci - ~ounta of low oxides with subsequent disproportion&-
tion into a higher oxide and metal. Experiments with tin dioxide have
confirmed the rule defined for the first time by Yu. P. Maslakovetap
according to which an active penetration of certain impurities occurs
only in the presence of others. The main fields of the application of
semiconducting tin dioiide are the glaoemaking and ceramic industry as
well as electrical engineering. The chemical analysis was carried out
by the method devised by V. V. Vasillyev and R. N. Novikov. There are
Card 3/4

.~ *1 1 -.;- ~,
Semioonduoting Tin Dioxide 8/18IJ60/002/01/07/035
B008/BO11
8 figures and i1 referenoes: 7 Soviet*
SUMMTED: April 3P 1958
Card 4A

91,Y 3 a a 3 7,1139', jY.3) 5/1 8IJ60/002/010/034/051
.5? 4. 0? 1/1~? I B01 9/BO56
AUTHORS; Kuznetsov, A, Ya. and Pafomova, L. A.
- -----------
TITLE: Films of Semiconducting IrOO-1
PERIODICAL: Fizika tverdogo tela, 1960p Vol. 2, No. 10,
pp. 2567 - 2569
TEXT: In the introduction the semiconductor properties of Zro2 above
10000C9 its high chemical stability and its refractoriness are poi ted
nts made by the authors showed that transparent films
out. Experime f
2 i-rcc-n
ZrO maj be produced either by the treatment of parts with z
salt va-pors or by hydrolysis. in this way it is possible to obtain
layers having a thickness of from 500 to 3000 A and a light transmissi-
vitY of 95% on various materials within the visible and ultraviolet
range. The surface layers are firm and have a high surface resistivity.
The authors tried to increase the electric conductivity of the layers
by introducing impurities. This could be done by the introduction of
Sn- and Bi-atoms into the ZrO2 layer. For this purpose, the layers were
Card 1,2

Films of Semiconducting ZrO2 S/18IJ60/002/010/034/051
B019/BO56
treated with vapors of Sn- and Bi-chlorides. Measurements of the ther-
moemf proved the p-type conductivity of these layers
(10 -.1 - 10-3 ohm-l.cm-1). Pig. 2 graphically shows the temperature de-
pendence of conductivity, and Fig. 3 the wavelength dependence trans-
missivity. There are 3 figures and 4 non-Soviet references.
SUBMITTED: January 9, 1960
Card 2/2

25663
3 001,3109 B/080"60/'033/012/022/024
%;-09 D209XD30'5
AUTHORS: Kryzhanovskiyp B.P., Kuznetsov, A.Ya.p and Tretlyakov,
D*N.
TITLE: Electrochemical precipitation of metals on glass
and porcelain
PERIODICAL: Zhurnal prikladnoy khimii, v. 33, no. 12, 1960,
2795 - 2796
TEXT; The authors studied the electrochemical pre~;ipitation of Cu,
Ni, Cr, Cd and Ag on glass and porcelain, a technique now in con-
stant use as a result of the d4scovery of methods, whereby these V11
materials are made electrocondu.'.cting and are then employed as elec-
trodes in galvanic bathe . Their work is a conginuation of previ-
ous research by AaYa. Kuznetsov (Ref. 1: ZL, 1, 1957) and A.Ya Kuz-
netsov et al (Ref. 2s Zh. pril. khimii, 32, 5, 1959)p which sbo*-d
the expediency of coating objects with SnO 2 to increase their sur-
faoe electrooonductivity. These films of Sn02 'whose specific sur-
Card 1/3

-66
S 080/60//033/012/022/L)24
Electrochemical precipitation ... D 09/1)305~
face resistance does not- exceed 20S19 are very suit-able for theW
galvanic precipitation of metals since their resistance R is less
than that of the electrolyte. The glass or porcelain is hence coa-
ted with SnO 2v treated with 0.2 N NaOH and immersed in the electro-
lytef thus forming the cathode on which the desired metal is depo-
sited; the anode is a plate of the same metaL A deposit of Ou with
a thickness of 10 F is obtained by elel-trolyzing an acid sulfate
solution for I hour at a current density of 1 5 MA/CM2 The co-
hesive force of Cu wiih,the porcelain is ISO 180 kg/cm~, as com-
pared with 100 - 120 kg/ cm? for glass. In the case of Ni a white
glassy layer, 10 - 15 Ii thick, results frpm the electrolysis of a
sulfate solution with NaCi and 11 3103 for 40 minutes at a current
density of 5 - 10 mA/cm2. A black precipitate of Ni with a thick-
ness of 20 ji is prepared by electrolyzing a solution of (NH 4)2
Ni(SO 4)2 for 70 minutes. Heating of these films in air at 3500
markedly increases their mechtkical strength, when the cohesive
force of Ni with the glass amounts to 100 - 120 kg/cm2. Electroly-
Card 2/3

25663
S/080/60/033/012/022/024
Electrochemical precipitation ... D209/D305
BiS of the solution of YabV. Vayner et al (Ref. 4: Spravochnik po
zashchitno-dekorativnym pokrytiyam (Handbook on Protective Ornamen-
tal Coatings), Gos. nauch. tekh. izda sp 1951) with a lead anode
at a current density of 20 - 30 MA/V yields a lustrous deposit of
Cr, but the authors were only able to obtain weak films of Cd (co-
hesive force with glass = 20 kg/cm2) on electrolyzing sulfate so-
lutions with NaCl, H3BO3 and gelatin. A solution of AgCN and KCN
is electrolyzed for I hour at a current density of 2 - 5 mA/cm2 for
the precipitation of thin but strong layers of Ag. 1n conclusion
the authors note that other ceramic materials of any desired size
may also be used in addition to porcelain, provided they are firs
coated with SnO 2* There are 4 Soviet-bloc references. t/
SUBMITTED: March 30P 1960
Card 3/3

5.~/~('21(;/6 Vooo/oo4/030/034
Fo36/F3 ~5
AUTHOM, Kryzhanov!5k.iy~ B.P., anq Kjj7~rjexgov A.,ya,.
TITLU, SemiLonductInit C,*yerzi c~t ccppmr iodide
PERIODICAL-,. Pribeiry i tt-khnika ekLaperimFma no. 4. 1961,
J:. I ~8
TEXT;; Tin,. tridium or -adui1am,vv.,idv lavere are widely used
at pretent tc, pro-vide #emirond-o.- ring tnyer5 ou Cron 6 POECent
dielectrirg. These layers ar" depe4.&-terl A.t 350 - 600
Often.. highly-tonalitAina, dir-li- !r1f- of mati.vtals which soften,
at. low temp,.hr5tuib- h-i pla-3fil q and p..,1,vrrerq are
requIr ad. Re., en+ .1 1'. J-P !),A S4 b6'~n f'Qurld pr.s-~k tb le t o deposit
copper iodid6 lav-~rr -Ahl,:h ~tavi2 a hx_qh con-Jacti-L--ity and, at the
4ame tjm~, re~ralxi tbt, -an.,part-fil prop-rtlr-s of organic
~~a_tbrtali;_(nef. 4 9, Vint- R ; Me A- - 2 phyA.Chem. . 1951,
198 ' NG. 14i. The t e--hiio1rjqy' which can be La-r-ried out
in any laboratory tf~ ceisirtbtd. fir -it a layer of very pure
ozpper (prefer-ibly 41c-~trclvt~c) 1.5 depo-!Ited in a vacuum of
elil .1.02mm Hg. Tb,~ irit e4rat;--d i ran%p-iren,y should be in the
Card 1/3

??61 P
S/12c'Wooo/oo4/030/034
S emir, ondue t i n g I ar s a f- t :., pp et i ed id E03 6/E3 3 5
r,anse 20- 3,50".. The iampl,~ t-A then placed in a c1osed vegael
with the iodine whl~h -renc-fi with Co Avt-ri at room temperature,
to give a aemicondl~-tjng laver xfl,er .10 , 30 min. To 0
strengthen tht- &Ae it 0% hi~-3tpd for one hour at 7o - 8o C
and again tzeated in. iodine vapeur fc;r .10 - 20 min. The trans-
paren~y of tbe orv3nic. ialts:;-, 1,~ or-Ay redu~ ed by 5 te 15%,
mainLy due to the h)v
gh of of the :;opper
iodide, whtth t-an b,~ A0dU.iA Thi. laver hass a 13 heet
resistance of' 500 tc AO'-- In oir dut to evaporation of the
iodino, deetrcytng ~he ve ', t~-. h iL m e t rtht, r-~Alstanc.7- grows
gradually 105 . .10 ?-1 IaVC-r is dj..pc2dt6d by
ceithodlc, Aputt.-~rjng to make ~orjxaA The ccpper iodide
layers oan be x-eatored a' any moment by txpusure to iodine vapour
at room temperature: To Increape 0)* els, trival stability an
organic Jac,quer can be &ppllod ~o Oir topper-oxide layer which
makes diffuslon of the iradine difficult,
f.,Ab5t,Tar,~er-* note. this Is an abridS.-,d tran-,lation,,)
Card 2/3

29618
S/l2o,6l/ooo/oo4/O30/O34
Semiconducting layers of copper iodide E036/E335
There are 6 referencesl 3 Soviet-bloc arid 3 non-,Soviet-bloc,,
The two English-language references quoted arex Ref. 3
R. Umblia - Glass, 1955, 32, Noo 123 Ref. 5 ... DA. Lyon
U.S. Patent 2756165, July-24., 1956.
1
ASSOCIATION% Gosudarstvennyy opticheakiy institut
(State Optics Institute)
SUBMITTEDt September 25, 1960
Card 3/3

58707
IQL111 11111, 1136 S/076/61/035/001/005/022
9L1.1 100 B004/BO60
AUTHORSt Kryzhanovskiy, B. P. and Kuznet Leningrad)
TITLE: The nature of the disturbance of stoichiometry and the
electrical conductivity of tin monoxide
PERIODICALs Zhurnal fizicheskoy khimii, v- 35, no. 1, 1961, 80 - 83
TEXTt The authors studied the problem of the changes occurring in the
electrical conductivity of metal oxides due to disturbances of the stoichio-
metric composition. SnO was the compound chosen for the experiments,
because the data contained in the literature regarding the temperature
limit of its stability are contradiotorys In consideration of the fact
that the electrical properties of semiconductors are already influenced by
small amounts of impuritiesp the authors checked the dependence of SnO con-
ductivity on the procedure applied to prepare this compound. The following
specimens were prepared. 1) Precipitation of Sn(OH)2 from dissolved SnCl 2
by an addition of Na 2CO3 up to the poorly acid reaction of the solution.
Boiling of the suspension at 1100C for several hourap decanting# and
Card 1/3

88707
B/076/61/035/001/005/022
The nature of the disturbance B0041BO60
drying. 2) Precipitation of Sn( 011)2 from SnC 12 by means of ammonia.
Further treatment like 1)- 3) Annealing of Sn(C 2 04)2 at 3200C in nitrogen
atmosphere- 4) Oxidation of a metallic tin layer# applied to glass by the
vacuum evaporation of tin, by way of heating to 2000C during 100 hours.
The X-ray structural analysis yielded for all specimens the same crystal
structure with the lattice constants a - 5-33 A, c - 4-77 A. The resulting
powders were pressed with 1000 kg/CM2. The conductivity of these specimens
was measured without further treatment, and after heating up to 1500 and
2000C. Specimens 1) and 2) exhibited p-type conductivityp while specimens
3) and 4) exhibited n-type conductivity. After heating up to 2000C,
changes appeared, however, that are reproduced in the tables
The specimens with p-type conductivity received n-type conductiirity;-SiO
is thus unstable already at 2000C. Below 2000C, SnO has only Sno 2 for an
impurity, while above 2000C metallic tin is formed, which gives rise to
n-type conductivity. There are I figure, 1 table, and 8 referencest
3 Soviet-bloc and 5 non-Soviet-bloc.
SUBMITTEDs April 11, 1959
Card 2/3

S/07 61/035/001/005/022
The nature of-the disturbances BONV60
Legond to the Table. a) Method of produotion; b) duration of heat,treat-
ment (20000);.c) typp of conductivity.
'r,,L L q a/ cuocoo npurmsmann
Brew 2 ~ I
3
IV Tan
- ARO, UP080. 9-101, Tan
IJACU n-I rr-8 ASn UP0110. ,PC Tan
CA-1 v Anuo, C.U-1 V AIIWO- 0.1 V111,110. O.W. AEV UPONO.
C74 CT)I V A 10. n-, %!a' AURO-
--- C CIO
0.0 .1 3 0,42 p
O's 3 8 2,1 0-36 p It,2 0,~
1 0 5 : it 6,4 13 12,0 n 05 1.0,22 It
0 0.43 n 8.3 01.34 n 12.1
2:0 0:5 it 8's 0,29 It 0,55 0.2 A
4 It 12,0 It
0 0,7 a '),0. n 12,1
7:0 7,2 0.40 n 9,2 0,33-1 It n
12,5 0,28 n 0.5 1 0.2
Table
-Card 3/3

263311 1,0351001/0"71()13
2 02
'Itj Of I asses
ejec-trocovaac 1415-148()
.aetsol I tj~e 1 4 1961 a,seS
s (.,A ,.&e or' 9
~Iet a 0-11 ~'- 359 bO- -is
~7-*-~-01 boT c tior's ;'11 . c-rease
feet tne a T'his 11(t 1.%jer JU
Ses . -botal () ~Bo 4
jeTgie 16JEts W'.0-5 4-~ 3 B 5 Of bD'
S11UTIVe. 900j,86 ti.011 e Ilicate 4"he I Al-aulell Case Tel
J~L j-a 13 0t I %%Ira %Jle
&IL a tylaf "Jitj trlj~ e. ~' ill
d'J.Vla'aal .4 -DeT r Stab I t Itle 9 f tb t1le
ATL M-a ell 'g ligbe 'V.11119 0 t1le to bill(' 'EV t
be OTS I. I -Dac bSe
ja& t 0fact 6,,,SeT ~ -196 1 r1ea re 5 - . 't'jje -lass
e-I.-P ...rtee") a' tb'p W)t'hf3 1&0 3, S 6
,,Te to" llovillg a j"ISS. tile is
t 0 tyke f 0 C OaSta1%U 1lsteT It of T19 to of g on 11b
ot-ric 01 '07raL rt;,e5 ceGG $as
kc Vro fo-rMea,
d6i e IS -ce -S (eig Oye face
lattl boll& 06TL tons e V e sx"r
S-P&Ce ell otber t-ric 140111M to B. Y1j *-Teen tb
O%J9 I e963C
the t1l loc Tise tT eral
U10-re ty%all Vdie jqeS elec se 11
Ton It aves tyle gJ861 S 9 .ob 96 ty%l jt'j - I%% j "i
ele%6r j.M.PTO tyle of N4bl V cti'q Go 11a'a
orov~ ag oil S.11t '01a 'q 01
b 0, Te -ria e - e
cou&ei'13 0.5 6b SAI 868 9 tb
Sla Tface t ill 0. 'hi to tyLe 9
.resxll+-s ,& v,
i'%'Co 'rPOTS.
raTa6
Effect Of boron Oxide 26337
cOliductivit, I SMY6110351'007/oO7,1019
of 7 LOOle% ncreased The ma.l. B127, B102
tat -The trans;tIon um effect
tX. rahedral One Is aCcOmpa, f-rom the tri 48 observed
Another Pecul lar nled bY an gonal at 11 bo~.J'
3102 and B anomajou bo-on .."e Conten t
tion 20 are in IV was observed In b. I 0hange - .. Oxide to the
3 equill brium ros In electri,
takes Place- at higher '11cat eglass 1~ cOnductivi-
temperatures thes: Above
ke-O-D% -0-, e f low, 4000c
1-0- me_0_3'~8 01 ng reao-
attained b'
be 6 1- + ~-O-- The deal
hol ding Of bo Yheat treatm -red salt
roal er
the M lIcate el Lt- The authorls experi OnOentration
"0-B bOndi3 ass atIlo m ay
shifted and 4 decrease tQmpera tures ments showed
Increased Of 'Onductivit leads to that
the equillbrIum con,
L. the cOnd entrat,on Y. Hi an increase of
and POlln uctlvItY b gh",temPerature treatment
13 -refer ' Y the 15 to higher
The el Ne.ncpe',BogOrodl - - 20 fold. silicate contents
12 SOVtsklY, G.
Tipp reference let l- Skanavi. Men ti on and
7 to English -1aand I is made of
at, Soc. (;lass to There are
Card 213 nguage pubnloin-SOvIet
chn cat a figure, 2 tables,
01. ' 16, 430, 1 Ion reads as rollo,,:
932.
Seddon

27681
5/07 61/035/009/004/015
BIOIYBI 10
AUTHOR: Kuznetsov, A. Ya.
TITLEs Surface electroconduotivity of lead glas ses
PERIODICALt Zhurnal fizicheskoy khimii, V. 35, no. 9, 1961, 1935 - 1937
TEM L. Yu. Kurts (Izv. AN SSSRO Otd. khim. n., 811, 1940) found
that in glasses of the system Na20 - PbO - S102 the surface conductivity
IG in moist air first rises and then drops to a constant value. The
a
.author of the present paper examined whether this effect also occurr::,,
in industrial PbO-containing glasses. Tests were conducted with gla
of types 42 (F2), T�3 (TF3), BC-4 (ZS-4), and Nonex, as well as with a
laborat'ory-made g'lass of the composition PbO-2SiO2 . Plane-parallel glass
plates were polished, cleaned with distilled water and alcohol, and
heated at 4000C. 12 mm, long metal foils, 6 mm distant from each other,
were used as electrodes. The surface conductivityvas measured at 200C
with a d.c. bridge. Air moisture was 50~6' or 90%. Fig. 1 shows results
for 90% moisture. With increasing moisture, the maxima grow larger and
Card 1/3

3~7681
07 61/035/009/004/015
Surface electroconductivity- B1011%110
appear after a shorter time already. The glass composition affects the
maximum only. Glasses containing alkali oxides (F2, TF3) besides PtO
ahow flat maxima. Explanationt When the glass surface is moistened, a
Sio2film forms, through which capillary tubes are passing. With a
moisture,> 4TAt water is adsorbed in these capillary tubes. The glass
hydroly3.es. The soluble Pb (OH)2 first increases the conductivity, but
soon it precipitates again as poorly soluble xPbO,yH20, thus reducing
the conductivity. With high alkali content, part of the alkali is bound
as plumbitej the rest of free alkali increases the conductivity, thus
flattening the maximum. The low values of IC (10-8 - 10-9 ohm- 1. cm-1
are pointed out. Th,9 )% of PbO-25iO2approaches that of quartz. There
are 2 figures and 6 Soviet references.
SUBMITTEDt October 5, 1959
Card 2/3

c -.L
A 17 0 4 9 3 7 0
z a f,
r, tj r r j p tranqnlarpn t o r g V m
v a I ab 0 r at o ri vav . 3 C n o 3 1? Q - 3
S r ating , cop ne r s uIfid e c o 3 t j n g t r n q p a r e n t c o n d u c t j ve
m e r T-, , n r p a n r 'r e r a e c o a i n g w Indow
r) 4- empe r-i t tire rrt eto ~i r nP, p T-
a r 5 P arn
0 e
T "V !-I
r 1) t, n 11 1 S W VI L
L C a tI
e r It, (I C
n 0 f m e ta c c o p p e rnv ac u u Pi mfr
-I un gF ten evapo r a t o r andauh q e u e n t r e P rr e n t -4 1 t h s ul f u r vapors
Card
C 1 2

p AP4048368
A t r a n a r- a r e n t c C. I d uc t I v e I -I e
~j r i r 4,- a9
r ra n p p T- e
Ru Ifi d L
r p q a .I p i -i a r
7 p f r1
4 an d c u rren t s m i a n
rl a r. d i r. a t ab 1 e I n a i r a t te aipe ratures u p t o 7 G 80 C
I
u c c o at f n g c a n 1) r c t, r m., p i r i q n d C ~i e jr, -
i A none
T T F D 00
.7 ~c ") V 000
ENCL 00
CT RE R 0 0 0
U A C F : N?T
AID PPESSi 3i27
2 2

L 15757-66 EWp(e)/Dn(m)/3iP(t)/WF(b) JJP(c) JDIWH
ACC KRI 05i4j467--M7 SOURCE CODEs M1/0032/65/03l/Ml/23%/1XA
AUTHOHs Kryshanovoldyg B, P.; Kruglobap A, V.1 Khanetsov, A. bo
ORGI none-
TITLEs Kleatroconduativo transparent coatings an Ida&
SOURCE, ZaVodsksYa laboratorlYos T. 31s no. 34 1965.9 1366
TOPIC TAWt mica pro duct, elsetria conduo
~Jvitjyp .7aporL utton, Alu4-9
"STRAM Strong$ laysio of Sn% am6t:be produced on 4qa th
existing Methods despite the fact that Snoi-004inge on silicate 9 1 W-1 idd4r I
used. A method was developed for the production of stro-n--gj-7Va=-nsp%rent- ers an
mlcas~o involving the removal of hygroscopic vater by heating muscovite for 2.54
hr at 450-500 0 (heating at > 550~'Q affects the liberation of 4*5% of the water of i
crystallization and swelling of ;a mica) with a heating and cooling rate of
150-200 0 per hour. Mar cooling, the mica surface was coated with a layer of
SLO~p Ti02p or Zr~O (0-1-0.3tL thick) produced from alcohol solutions: Lko~ fron
3-4 solution of silicat) ethyl other in dry ethyl alcohol; TiO2 from 3X alcohol
solution of ethyl other or thlotitamte; and Zr(~ either from 3% solution of
1/2

L 15751-66
--Adr, ims' - mon4i-- 0-1
ZrOC12 In 94-98,5% ethyl alcohol or 3%'aolution of ZrOGl2(C2H O)f.ether in 99.5p
alcobol] by using the chmical illumination method described V. GreboubdBm
(Prosvetlenly optiki, OGIZ9 19/46). The coating was heated for 0.5-1 hr at 150-200P
and then applied on a fixed layer of SiO2,, TLC~, or ZrC~ of the elect-roconduouve
transparent SnO~ layer by heating mica, at 4= in vapors from the hydrolysis of
SnCl2- Into the initial SnOl 44% ammordum fluoride was added to increase the
transparency and electric Oonju'o'tIvjty of the coating. Layers of SnOgewith an
electric resistivity of 26-30 ohm anda transparency of 80-85% could Produced
by this method*
M GO% t U/ =Q. Rat',
'v
2/2

11R' AP6015653
SOURCE CODE:* UR/0413/66/000/009/0063/0063
Y7
INVENTOR: Kuznetsov, A. Ya.,- Orlova, L. A..
ORG: none
TITLE: Method of increasing the mechanical stren th of alass,"i Class 32,
No. 181249_~6
SOURCE: lzbreteniya, promyshlennyye obraztsy, tovarnyye znaki, no. 9, 1966, 63
TOPIC TAGS: optic glass, glas's treatment
ABSTRACT: An Author Certificate has been issued for a method of increasing the
mechanical strength of glass by treating it in a hot Alkaline solutioru - To increase
j5a potassium hydroxide solution
the mechanical strength of optical qjcyffezj fEet glass
of 0. 5 normal concentration at 45-55C is used as the pickling solution. (Tranalatiorl
[NT)
SUB CODE: 11 / SUBM DATE: 13Mar65/
0
Card 1/1 Yom UDC: 621.746. 27

- L JCP-3- ~7-67 ~_ F-W1(m)/EWR(e W/C D
ACC NKs --AT6027136 SOURCE CODES UR/0000165/000/00070-C~~l-/0-6~~
AUTHORI Kuznotaov# A. 14.; Ta9khomskiy, V. A0; Tunimanov&, I. V,1
ORG I none
TITLES Semiconduo 4icate glasses based on titanium oxideso
SOURCES AN SSSR. Otd:l:niyo obahchey i tekhnicheskoy khimii. Issladovaniya v oblast
khimli silikatov i oki 1 v (Studies in the field of chemistry of silicates and oxides
Moscowo Izd-vo Nauka, 1965, 41-45
TOPIC TAGS1 titanium dioxidoy aluminum oxidet silicate glassp semiconducting materi
ABSTRACTS Semiconducting asses of the system CaO-412C~-Ti(~-SW2 containing various
amounts of aluminum metal gadded to create reducing conditions during melting at
1500*0 were studied. ESR spectra showod that the T13+ ion constitutes the base of
the reduced phase in the glasses. The latter were divided into two groupst (1) those
with a variable Ti0
2 content in the initial glass and (2) those with a constant Tic~
coptent (20 mole %) and a variable A120~ content. In all cases, an increase in the
TV+ content of the glass was found to increase the electric conductivity. The aoti-
vation energy of conductivity decreases with rising TiO2 conduct-in the initial glasss
then remains approximately the same as the content of W'I* ions increases in glasses
containing the same total amount jqT titanium; the preexponential factor (log f9 ) de-
creases with rising content or TV ions. The data show that in all cases only a

ACC NRs AT6027136
small part of the total TO+ ions participate in the electric conductivity. Whereas
in the initial glasses AlA has almost no effect on the electric conductivityp in the
.reduced glasses the conductivity drops by 5 orders of magnitude as the AIZC~ content
increases from to 20%. The mechanism of these phenomena are discussed. Drig. art.
hast 2 figuresi 3 tables'and I fomula.
SUB CODEs ill SUBH DAMI 2BApr64/ ORIG REF3 003/ OTH REFI OC4
cad 2/2

KUZNETSOV, B.-
Now motion pictures an building. Zhil. stroi. no.5:24 159.
(MM 12:8)
(Motion pictures in industry)

SOV
Figwes that spur one on. Okhr.trida i oote.strakh. no.1:29-
30 Ja '59. t. (MIU 12:2)
1. Zameatitell predsedatolya savkoma Mytishchinakogo mashinostroitall-
nogo zavoda
(H.Vti;hchi--Kachinery industry-Hyglenic aspects)

_UZNKTSOV, B.; MEMO, Bo
Work methods of P. Sapunov's crew, Prof.-tekh. obr.
19 no.&14~-17 Ag '62. 1 (14MA 15; 12)
(Orel Province-Corn (maize))

KUZNETSOV B., inzh.; SLUTSKER, Ya., inzh.
The 2 STsN-6 and STSP-6 sugar Poet precision planters. Trakt. i
sellkhoqmash- 33 no-808-40 ~A# 163* (MIRA 16zll)
1. VsesoyuzW nauchno-issledovatel'skiy institut sellskokhozyast-
vennogo mashinostroyeniya (for Kuzuetsov). 2, Spetsial'fioye kon
struktorskoye t7uro zavoda "Krasnaya zvezdaO (for Slutsker)e

KumizTSOV.. B., (Stalingrad)
Soldering aluminum Parts- Radio no.12:40 D 154. (MI-RA 8:1)
(Solder and ooldering)

/1 02 YU 6 7_614) 11
USSR/ Electronics -:Television
Card 1/1 Pub. 89 - 19/27
Author* I Kuz*neteov, Bel Pribyah# 8.1 and Mokhov, V.
Title I txchango of experience-Techniques regarding tubes, transformer and
cathode
Nriodleal s Hadio, 1, page 45, -Tan 1955.
Abstraot s A brackef for holding a tube in place is describedo A method
for finding the number of turns in the winding of a radio or
television transformer is explained. A method is presented for
obtaining a clear picture when the cathode connection is broken,
through the use of an independent transfomere Illustrations,
schematic drawing.
Institution t ..........
Submitted t
3
-M
N-

KUZNETSOV, B.
Soldering of Aluminum Parts. Radio Engineering, #6:39:June 55

IMNETSOV. B.
' *~F`V~'
, &- d- -,, -_
,a~ . I .
A di,fficult routes Za rul. 14 no*5:6-7 Aq 136.
(Automobile drivers--Competitions)
(MIaA 10:1)

KUZNETSOV--B-
"Grand Prix" of the Central Automobile and Hotorcycle Club of the
U.S.S.R. Z& rul.18 no.9:9-11 S160. . (MIRA 13:10)
(Motorcycle racing)
f

, KUZBETSOVp B. (O-dossa)--
d
Ourprises in Ode.sm., Zot rul. 20 no-10:14-15 ID '60.
(Odeskaw-Rotoroycle racing)
(KIRA 34s.1)'

KUM7~RVI
NA fanatic of motor x;ewt.8 Auto motor 24 no.24t29 D 161.
1, wZa rulyem" foozerkesztoje.
RIM

KMITSTSOV, Bori.~_Aj&kMndrovich, assistent
. ............... . . . .I...... .................... ...-
Use of a phase-sensitive detector vith a dual triode in tensometric
measurements, Izve vyse ucheba zave; elektromekh. 3 no-3:158-161
16o. (MIRA 13:10)
1. Kafedra obshchey elektrotekhniki i alektricheakikh mashin
Donetakogo industrialinogo inatituta.
(Tensiometere) (Electronic circuits)

DAVYWV, N.I., k&.nd.tekhn.navk; AFANASOV, S.N., inzh.; RIITKUS,
S.K., inzh.1 KUZVET~OV 0 13. A. .jnzh.
New circuit for the control of combustion in drum boilers
with shaft mills, Teploenergetika 7 no.1007-63 0 16o.
(MMI 14: 9)
1. Vaesoyuznyy teplotekhnichookiy institut i Teploelektrot-
eentrall Mooenergo.
(Boilers--Furnaces) (Automatic control)

S/196/61/000/009/049/052
E194/E155.
AUTHOR: Kuznetsovt B.A.
TITLE: The power characteristics of multi-speed induction
motors
PERIODICAL: Referativnyy zhurnal# Elektrotekhnika i energetika,
no.9, 1961, 10, abstract 9L 52. (Tr. Uraltzkogo
politekhn. in-tat Sb.106, ig6o, 53-64)
TEXT: It follows from an analysis of the relationship of
braking conditions in multi-speed induct-ion motors that the
effectiveness of utilisation of'regenerative braking depends upon
the ratio between the speed steps and also on the ratio of the
rotor resistance to that of the stator. When the latter ratio
at its optimum in respect of power regeneration, the initial slip
will be of the same ratio. Hondo it in in practice inadvisable
to use partial switching which given an initial slip greater than
this ratio, because of the excessive power consumption and motor
heating. In designing motors with multi-speed connections,
maximum utilisation of regenerative braking conditions is achieved
by making the ratio of rotor to stator resistance equal to or
Card 1/2

The power characteristics of ... S/196/61/000/009/049/052
E194/El55
greater than the initial slip which occurs during retardation and
speed switching of the motor. The upper limit is a rotor to
stator resistance ratio of 31 because further increase has little Z
effect in reducing losses in the motor.
6 figures, 4 literature references.
CAbstractor's note: Complete translation.]
Card 2/2

81409
8/020J60/132/06/34/068
S' 3004/2005
AUTHORS: _U4499ML-24;~ Yelkinal K. D.
TITLE: The Mechanism of the Heterogeneous Exchange of Acetone and
Water in the Gaseous Phase
PERIODICAL: Doklady Akademii nauk SSSR, 1960p Vol. 132, No. 6,
pp. 1344- 1347
TEXT: In a previous paper (Ref. 1), the authors investigated the exchange
of acetone and HBr in the gaseous phsoet and derived a reaction scheme
fox this process. To check this scheme and to clarify the general rules
governing the exchange between compounds having an undivided electron pa,A/~
and an active hydrogen atomt the kinetics of the isotope exchange between
acetone and water, acetone and ammonia, was investigated, With respect to
-the latter proossep the authors only state that no exchange occurred when
using the method described in Ref. 1. The exchange of acetone and water
was studied by means of tritiumo At a specific activity qHTO - .
n 4-52alO 6 imp/min.mmq a very slow exchange was observed, the kinetics of
Card 1/3

8109
The Mechanism of the Heterogeneous Exchange S/020/60/132/06/34/068
of Acetone and Water in the Gaseous Phase BOOVE005
which was studied* The aostone-vater mixture was added into the experimen-
tal apparatus, the acetone was separated from the water after the reaction.
The T content in acetone was determined by means of a counter, the T con-
tent in water by measuring the a8tivity of the hydrogen obtained by reduc-
tion of HTO via magnesium at 470 C. The experimental results are shown in
Fig. 1 ~dependencs of the exchange rate on the pressure of acetone) and
Figo 2 dependence of the exchange rate on temperature). The experiments
were carried out in part in an empty quartz vessel, in part in a quartz
vessel filled with quartz splinters. In the latter case, the surface wan
16 times largery the reaction rate 100 times higher than with the empty
vessel. From this fact the adthors conclude that the acetone-water exchange
occurs via the hydroxyl groups of the quartz surface. The authors measured
the exchange of acetone and water with the hydroxyl groups (Fig. 3). These
results lead to the conclusion that the acetone-water exchange occurs via
acetone compounds chemically adsorbed on the quartz under action of the
hydroxyl groups of the quartz surface and the adsorbed water. There are
3 figures and 5 referenooet 5 Soviet and I German.
Card 2/3

814og
The Mechanism of the Heterogeneous Exchange 8/020/60/132/06/34/068
of Acetone and Water in the Gaseous Phase B004/BOO5
ASSOCIATION: Moakovskiy goeudarstvennyy universitat im. M. V. Lomonosova
(Moscow State University imeni M. V. Lomonoeov)
PRESENTED: February 24P 1960, by V. N. Kondratlyev, Academician IX/
SUBMITTED: February 199 1960
Card 3/3

KUZIIETSOVV B.A.
--- WAW
Materials on the ma=sIs of Central Asia. Trudy MOIP. Otd. biol.
10:116-156 163. (MIRA 17:4)

- - - - - -
x L.- A Lj__A_
0 - -
f4eciiii- No
g:
00 .4 B-A
00 a
00
go
0*
09.9
fF ir i, va, a CW 9F JF 9F 0 w-
p -4 )1 ffilms it A171 Not*
CM 0 UJAL- k A - 1- 6 A.AA-A-1-0 6_4 _f__V
11
%, r, ,
is
lee
466
moo
11. A. "AU*djOic CAmm"1108 JUist Of Mt#Gb:' [In Ruamian.1
go pp. em). Xwow ancl UWagmd, 1911: X-11. Wim-Twhn. Vrrl&g for see
3(michinrabou und FAwnsmetalluraie. (Prke D-RA r'"Ib1m) %o
00
00
I A - I L A ASTALLUINGICAL UTIMAIM CL-ASSJFICAtON
U I I ; tit ~u
0 0 0 0 0 : 0 0 g : 2
OTOO - - - 0 00 0 0 0 0 0 0 0 00011-A
Too
No*
U00
Is
slow "win.
filial -ow*.v 5,
I a IW
00000 41
ooooooooe***Oo***

USSR/Retanurgy Fatigue Testing, Jan 53
Nature. of Fatigue
"Studying the Nature of Fatigue by Optical Method,"
S. 0. Tsobkallo, B. A. Nuznetsov
Zhur. Tekh Fiz, Vol 23, No 1, PP 3-16
'.Uses specimens made of silver chloride and testing
machine of special design for studying process of
fatigue in metals. Discusses existing theories of
fatigue failure and concludes that most correct
theory is one based on assumption of gradual de-
crease in local strength ("loosening") with in-
creasingnumber of load reversals.
270T68

USSR/Cheuistry,- Isotopes, Reaction 21 Sep 53
Kinetics
"The Influence of the Structure of Alkyl Iodides.
on the Rate of Their Isotopic Exchange with Ions
and Atoms of Iodine," K.B. Neyman, B.A. Kuzneteov,
and Yu.M. Shapovalov', Inst of Chem Physics, Acad
Sci USSR
DAN SSSR, Vol 92, No 3, pp 611-614
Using r131 in both.the ionic and atomic form, stud~-
A
ied the effect of the structure of normal as com-
pared with iso-propyl iodide on the rate of ex-
change with iodine. Iso-propyl iodide exchan~pn
26ft5
iodine with iodine in the ionic form 20-25 slower
than normal propyl iodide. The rate of isotopic
exchange of iodine in iaopropyl iodide with atomic
iodine is 25 times faster than that of normal
propyl iodide. Presented by Acad N.N. Semenov
17 Jun 53.
268T5

RTSUN, S.Ye.; FOOMI, A.A., kand.tekhn.nouk. red.; KUZNMOT B.A&V kand.
tekhn.nauk, re.tsenzent; SOKOLOYA, L.V., takhn.red.
[Tempering machinas and induction heaters) Zakelochnyo stanki I
induktsionnye nagrevateli. Pod red. A.Wogelia. Moskva, Goo.
nauchno-fikhn.kfd-vo mashinostroit.i sudoetrolt.lit-ry, 1954.
37 P. (Bibliotpchke vyeokochastotnika-tarmiBta, no.11)
ll~ (KIRA 12:3)
(Induct ion heating) (Tempering)

Category : USSR/Solid State PhysiL - Meebax-Ical Properties of Crystals and 2-9
Polycrysta 11ine Compounds
Abs Jour : Ref Zhur - Fizika, No 2, 1957 No 3960
Author etsov B.A.
t, h e
0 ~
Title St o the Fatigue of Silver Chl-
St~
nride by an Optical Method
Orig Pub : Zh. tekbr.. fiziki.,- 1956, 26, &, 5, 1034-io44
Abstract : An investigatica vas made of the distribution of the'internal stresses
and of the structure of the cha:zges that occur in monocrystalline and
polyarystalline.specimeris of silver chIrride during the process of rever-
sible flexares at a frequency of 50 cycles,. The 1rocess of fatigue
damage of silver chloride cszL be subdivided into three stages. The first
stage is characterized by a gradual increase in the optical path difference
on the edges of the specimen and a reduction of this difference at the
center, and terminates with such a distribution of the optical path dif-
ferer,ce over the'section. of the specimen.. as would beobserved in the case
of static loading that does not exceed the elastic' limit. In the second
stage, vhich occuars-'at greater, stresses ia the cycle, there appear dark
lines, which are-f,,-Nrmed mostly at the edges of the specimen and on the
Card 1/2

Category : USSR/Solid State Physics - Mechanical Properties of Crystals and E-9
Polycrystalline Compounds
Abs Jour : Ref Zhur - Fizika, No 2, 1957 No 3980
bound ies of the gra "r. The opticaI path difference diminishes in
the portions containing such lines and 1-tcreases in the neighboring
portions. The third stage begi-ts at the instant that a fatigue crack is
formed 9-nA ends with the failixre, vb1ch in the case of polyerystalline
specimens always occurs on the graia baunaaries, In specimens that
have been subjected af*tL- -a certain im er of cycles to an intermediate
anneallmg at 50& for five hours, -the changes in the microstructure and
the optical path differences develop considerably faster'during further
tests, than izL specimens 'that -axe nA a,_nealed. it is proposed that in
the first stage of the'fatigue process there occurs ordina y plastic de-
formation by shear along the slippage planes, accompanied by a strengthen-
ing of the material; in the second stage, the principal role is played
by some other form of plastue deformation, leading to a crumbling and
weakening of the material, and in the final analysis., the fatigue failure.
Card 2/2