SCIENTIFIC ABSTRACT ADIROVICH, E. I. - ADIROVICH, E. I.

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• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000100320018-6
• Release Decision: RIF
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• Document Creation Date: November 2, 2016
• Document Release Date: June 5, 2000
• Sequence Number: 18
• Publication Date: December 31, 1967
• Content Type: SCIENCEAB

"urn eksp,'L teor.fis,31, faso.2., 261-272 (1956) CARD 2 / 2 PA -
'f.574
electron on the admixturc lev?ls For the domain of higher
tempera-ru'res tw,:~
temperatures are specially mentioned: 0 3 correaj)onda to the
equalitj of Lhs ad-
mixture-dependent and independent conduct;.~,ity.and 0. to
independent condu-ti-
1+
ity- Nearly all requlta obtained here bold air:,o iu the cease of
holle-senacondu.:,-
tors,
The life 'P~ of tho oharge whiloh aro not in eqti 1-abrium
J.n.~,reases with
rising teriperatur- at fl.rgt to it maximum, after which iL.
again decreages, At
I 4F I > EL T 'J* irrrease3 even at 9 --)~ 0 Here 5:Fand F_L
denote the energies of
the"trap" and the hole reapectively, If, however. the
rooombina-fton levels artl ill
the middle of the forbidden zone (or, more accurately: if the
position of the
''trap" agrees with that of the FER14I level in pure germanium),
",,ncreases
momentarily after which it remains constants The relaxation of
the colir-ellZra-
tion of electrons which does not correspond to equilibrium is due
to two pro-
cesses* 1,) Recombi)iat-Lon of electrons in the ~,mpty "traps"
which ,orre.3pcnd to
equilibrium, and 2 ) Recombination of electrons correFponding to
equilibrium
with the surplus of empty 11trap511,
In conclu3ion three concrete examples are dealt with
INSTITUTIM Physical Institute "P.11-LEBEDEV" of the Academy cf
Ssien:.e in the
USSR

Dokl.Akad.Nauk, 108, fasc.3, 417-420 (1956) CARD 2 PA - 1365
e-type. (F > 0). According to the dependence of the lift of the
holes on the
FMI level F, another heat-dependent emission of holi!,., from
the "traps" into
the valenco zone occur8, and thereforu a iocond maximum ixt9ts
in tho oaue of
such a dependence, In the case of steady operation the
recombination of elec-
trons and holes in the "traps" is in equilibrium with the
production of pairs,
If this pair production is interrupted, uncompensated and
approximately equally
strong currents of electrons and holes from the zones to the
"traps" are pro-
duced. The life of unreal charge carriers is introduced into
the theory as a
fundamental characteristic, In the case of high concentrations
of the "traps"
the results obtained by the authors agree with those obtained
by SHOCKLEY and
READ only within a certain interval, If the "traps" are in the
lower half of the
forbidden zone, the characteristic time of damping is equal to
the life of the
real current carriersr This is true for all positions of FERMI
levels in elec-
tronic semiconductors as well as in sufficiently marked
hole-semiconductors.
In conclusion the two main methods for the measuring of lives,
the impulse me-
thod and the photoelectric method, are discussed,
INSTITUTION: Physical Institute "P-N.LEBEDEV" of the Academy of
Science in the
USSR.

AUTHOR: Adirovich, E.I. and Gordonov, A.Yu.
TITLE : A-U Sci Conf dedicated to "Radio Day", Moscow
20-25 YhY 1957.
"Theory and Experimental Investigation of
Coefficients of
Emitter-Co.1lector Transmission in Junction
Transisitors,"
PERIODICAL : Radiotekhnika i Electronika, Vol. 2, No.
9, pp. 1221-1224,
1957, (USSR)
For abstract see L.G. Stolyarov.

I.-A / Nc
AUTHOR ADIROVICII,E.I., and KOLGTIL0VA,V.G. PA - 2535
TITLE Influence of the Emitter Effectiveness on Semiconductor
Triod Transition Characteristics. (Vliyaniye effektivnosti
emitters. na. perekhodnyye kharakteristiki poluprovodnikovykh
triodov, Russian)
PERIODICAL Zhurnal Tekhn. Fiz., 1957, Vol 27, Nr 3, PP 473 -
477 (U.S.S.1
Received, 4 / 1957 Reviewed., 6 / 1957
ABSTRACT With reference to the papers of the author in
Doklady Akad.
Nauk SSSR, 1955, Vol 105, Nr 4, and 1956, Vol 106, Nr 4,
where the transition characteristics for semiconductor triods
were found, the dependence of transition characteristics on tl
efficiency of the emitter ~i is investigated by the present
pal
First the mathematical formulation of the problem of trans-
ition characteristics in the case of an earthed basis is writi
down for the case ~ / 1. The coefficient ~ expresses in the
last equation of t is system the boundary condition on the
emitter. The effectiveness of the emitter in this case does
not alter the form of the transition characteristic nor,the
value of the time of adjustment. Also the frequency-char~cter-
istic of the triod does not change. Finally the required
equation for the transition characteristic of a semi-conduc-
tor triod for the case of an earthed emitter is obtained for
an arbitrary value of the emitter efficiency 0 . Now the most
Card 1/2 C

/A 1) 1 (~'~ I- , i C ~1)I--- -L'
AUTHOR: ADIROVICH,E.I., TWO,J,~.V. 57-6-4/36
TITLE: Transitfo-nFrequency and Phase Characteristics of a
Transistor
in the Case of a Comon Emittrr. (Perekhodnaya, chastotnaya i
fazovaya kharakteristiki trarzistora pri obalichem emittere,
Russian)
YxMIODICAL- Zhurnal Tekhn.Fiz. 1957, Vol 27, Nr 6, pp
1174-il8l (U.S.S.R.)
ABSTRACT: The formula given by the authors in Zhurnal
Tekhn.Fiz, 1957,
Vol 27, Nr 31 Pp 473-473 for the transition characteristic
of a transistor in the case of a common emittor can not be
used
for immediate calculation of processes in transistors because
of its complex character. Here a formula is deduced which
offers
an approximation for the transition characteristic of a
transistor
in the case of a common emittor in its total course which =
serve as a basis for a calculation of transition processes and
frequency chamateristics.
Alao the oorresponding formulae for the frequency--,,'
a-ic-oharac-
teristic of a transistor are deducea and then the
rpproximation
formulae for the frequenoy as well as for the phase charaoter-
istio are givcn.
A comparison is drayin iTith the detailed formulae and the
authors
3L'M 1/ 2

IMROVICH I.
I A. YTJ. TfFre.~1,enc,,,--! iiaoe anu zranc;-4ent
I. AD171,071CH)
cliaracteristics c,f a s(,,r,-,4ccnd1jctc..r trJooe j-tLI:--e in a
circuit
with a common base." ')cic-n-Ui,'ic Sesz3i(,n Devoted to "Racdc Dayll,
'Nay 15-58,
Tri.,dreZ~!~!rViZdat, YOZiC01,j, 5 Sep. 7F
A computation of the frOLjuenc3r and transitnt charactcri.stics of an
amplifier ,jta[,e usinC a seiidconductor triode in a circuit with a
cor-mon
baSe is nade on the basis of the theory of the emitter-collector
transfvr
coefficient.
The results are presented in the form of approximate formulas and
nomograms which permJt engineering computptions. Lx,:eririental data are
obtained and a comparison is made with theory. I'he arreement
extab3i,-hed
dhows the possibility of computing stL,,,es in the appropriate regions.

ADIROVICH, k~.I.
Remarks on the review of V.V.Antonov-Romanovskii and
II.V.Fok.
opt. i spektr. 4 no. 6:807-809 Je 158. (MIRA 11:8)
(Luminescence)

AUTJORS.
Adirovich, L. I., ilyabinkin, Yu. S., Te;.-t'ro, K. V.
57-1-9/3o
TITLB.
The -Equilibria.,.i Distril)ution of Pat,~,,,,tijj
aijd of the Coll

centration of tlie charge Carrier-, on Zased-Iji
J.Anctions(Ravno-

vesnoye rasprcdeleniye potelit3iala, ~olya i
kontsentratsiy no-

siteley zaryada ,m vplavlc,.,,.,i.
PERIODICAL:
-arnal Teklinicheskoy Viziki, 1958, iol. 20, 1, pp. 55-66

ABSTAACT.
First theauthors show that tiie prublem of tlif~ th,-rmodyna;Ac

eQuilibriaia distribution of t1he potcntial, oC tn~- fic-ld and of

the concentration of mavable charge carricrs in a geral case

can
not be solved !:ccording to the met`,o6 of *~i. Shockley (ref.

i.c.
by Liea,,s of nc~,,Iectipg the concentration of electrons and

holes
within the range of transition in compari.,ion to the con-

centration of the do:ainatin~, ad.Axtares. *2hen the i%athczaatic

for..iulation a-cl thu -,eni--ral sojutiun of the -)roblelz are
eiven.

The probleo of tne distribitior. o;-.' the -iotenti-1, of
the fiele

and of the concentration of c;mr.-e carriers in a
se,.-,icondactoi

with one p-n or p-i- trarisitior. at
thEr-odyna--iic e,uilibrium

leads to the findin~~pf a solutior for
th,: u.,uation of 6hockleZ

-
a T . 2 shT 11(3.) for the potential (1) um-c.~r correspondinc
7-
Card 1/5
d
x

The Eqailibriu;,i Distribution of Field Potential anc, of the
t;on- 57-1-9/3
centration of the Charge Carriers on Fused -In Jaictions.
where the degree of alloy of the p-range fxceeds that of the n
range by "iore than one order of magnitude, i.e. ~lractically
in
ali~iost- all real cases. For real conditions the
semiconductor o
the n-type is divided into three ran,,,;es and approximation
for-
mulae are given for them. Diagra;.is are enclosed for the
deter-
wination of the position ofp-n transitions in dependence on th
concentration of admixtures in semiconductors of the n- ancip-
type. The :,c)rc exact solution of the equation (1) and the
calc
ation of the positior of p-n transitions was c-Irried out by
me
of an electronic co:.-iputin,- machine of the "Strela-311
type. The
are 9 figures, 4 tables, and 4 refercnceo, 2 of which are Slav
SUBLIIT'VED: June 12, 1957
AVAILABLE: Library of Congress
Card 3/3

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ficbmalco"I g"jty
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Mall), *a.,
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S. N. Am-
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IL P~--
JL OL n--"
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AL 0-
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A. 0. 6.P-

~ZV,9700 66259
AUTHOR: Adirovich, E. I. SC)V/181-1-7-15/21
TITLE: Conductivity and Transmission Coefficient of the
Voltage of a
Semiconductor Diode in the Nori-stationkry Regime -
PERIODICAL: Fizika tverdogo tela, 1959, Vol 1, Nr 7, PP 1115 -
11124 (USSR)
ABSTRACT: In the introductory mention is made of a paper by S~
G. Kalash-
nikov and N. A. Penin (Ref 1) dealing with the investigation of
the frequency dependence of the rectified current in a semicon-
ductor diode with small signals and with the predominance of
diffusion capacity. Here, the author investigates the
frequency-
versus-phase characteristics and the transition characteristics
of conductivity and of the transmission coefficient of the
volt-
age under the following premises: (1) diffusion approximation;
(2) small signals; (3) positive displacement in the p-n transi
tion; (4) extension of the range of the p- and n-type is much
larger than the respective diffusion length; (5) the p-range is
more strongly alloyed than the n-range. The first part deals
with the investigation of the phase-versus.-frequency charac-
teristics, proceeding from formula (1) for the total current
COMDOsed of the diffusion current of the minority carrier in
Card 1/3 the p- and n-ranges, and the displacement current,
and obtainin
~7

PHASE I BOOK EXPLOITATION SOV/5135
Nauchno-tekhnicheskoye obshchestvo radiotekhniki i
elektrosvyazi im.
A.S. Popova
100 let so dnya rozhdeniya A.S. Popova; yubileynaya sessiya
(One Hundredth
Anniversary of the Birth of A.S. Popov; Anniversary Session)
[Moscow]
Izd-vo AN SSSR, 1960- 312 p. Errata slip inserted. 2,800
copies printed.
SponBoring~,kgency: Akademiya SSSR.
Chief Ed#: A*L, Mints, Academician; Editorial Board: G.D.
Burdun, A.R. Vollpert,
1. Ye. Goron, L. I. Gutemakher, I.I. Grodnev, N.D. Devyatkov,
L.A. Zhekulin,
S.Is Katayev, M.S. Neyman, V.I. Siforovand N.I. Chistyakov;
Ed. of Publishing
House: L.V. Gessen; Tech. Ed..: S.G. Markdvich.
PURPOSE: This collection of reports is intended for
scientists and technicians
vorking in radio engineering and telecommunications.
COVERAGEs The reports included in this collection vere
submitted at the scientific
meeting held in 1959 by the Nauchno-tekhnicheakoye
obshchestvo radiotekhniki i
elektrosvyazi " A.S# Popova (Scientific and Technical Society
of Radio
Card 1/7

One Hundredth Anniversary (Cont.) SOV/5135
Shchukin) A.N. Effect of Fluctuation Noises on the
Accuracy of Determination
of Coordinates by Radio Engineering Methods 5
Adirovich., E.I. Relaxation Processes in Semiconductors
and the Reactive
froperties
of junction Transistors 29
Siforov, Vol., and L.F. Borodin. Concerning the Use of
Error-Correcting
Codes in Official Communications 1 41
Borodin, L.F. Concerning the Speed of Transmission of
Information
Along Symmetrical Channels 57
Basharinov., AoYee, B.S. Fleysbnan.,and G.S. Tyslyatskiy.
Method of Sequential
Analysis in Problems of Signal Detection in Mu.Ltichannel
Systems 74
Lezin'. Yu.S. Concerning Threshold Signals [Detected] by
an Incoherent
Storage Device With an Exponential Weighting Function 79
Pistollkors, A.A. Problem of Antenna Synthesis 84
Card 3/7

One Hundredth Anniversary (Cont.) SOV/5135
A-fanaslyev, V.A. Prospects of Developing SHF Electronic
Amplifiers
With Low Noise Factor 171
Tager, A.S., Concerning the Theory of Parametric Frequency
Amplification and
Conversion in Waveguide Systems 178
Brodskiy, A.I., A.N. Akhiyezer, V.I. Magda, and A.P. Sen1ko.
Standard
Calorimetric Installation For The Checking of Low-Power
Meters 188
Burdun, G.D., Ye.B. Zalltsman, and V.Ye. Poyarkova.
Installation For
Measuring Dielectric Permeability and Dielectric Loss-Angle
Tangent
in the &mm Wave Band 194
Rassadin., B.I. Methods of Raising the Peak and Average
Pover of
a Single-Band Transmitter 202
Gusev, V.D... Yu.V. Kushnerevskiy, and S.F. Mirkotan.
Comparison of
Results of Observation of Large and Small Nonuniformities in
the
F2 Layer 211
Card 5/ 7

I One Hundredth Anniversary (Cont.) SOV/5135
Kolltsov, V.G.., and A.S. Angelov. Television Receivers
Using Semiconductor
Devices 283
Aksenov, V.P. Relationships Between the Background Level of
Broad-
casting Systems and the PUlsation Level of Supply Sources 294
AVAILABLE: Library of Congress
JP/dfk gMp
Card 7/7 5.241

Semiconductor Devices and Their (Cont.) SOV/4034
TAM OF CONTMS:
Nosov, Yu.R, Transient Chazueteristics of Semiconductor DiodeB.
The article reviewa the principal conclusions of the theory of
semiconductor diodes and transistors, the agreement of theoretical
with experimental data., and problems connected with the utiliz-
ation of semiconductor diodes in pulse circuits.
._A#rovich,,_E.j.., and A.Yu. Gordonov. Theory and Experimental
Investigation
of Emitter-to-Collector Current Gain in Juncti--~_ Transistors. 39
The article shows that emitter-to-collector current gain is the
basic tromsistor parameter and determines its amplifying and
generating capacities for any circuit diagram. Theoretical ex-
pressions of current gain permit one to reduce the calculation
of junction transistor parameters to the calculation of a
circuit.
Card 2/10

3'05 02
0-1191V611000100310501092
R-elw,.ation processes. D201/D304
where V - external potential; transition width, n -
electron
concentratio-a. it follows ttiat the trz4nsition c
apacitance is det-
ermined -iiot by variatio'a of the total char,,'c -irithin
the n- or p-
typc region but only by variation of the partial charre of
t-.iajority
carriers. This fact explains the (n-,periment being in
a"rreement
C> U,
with the appioximatc Schottky-Motta formula -for a starved
layer.
The relaxation processcs in juaction transistors werc
analyzed,
comparison was made of the characteristic ai-d 'Lase
rainority carriers
diffusion aml recombination times and their de,)eiidence
on the type
of junction tranSistor con-tection was analyzed. It is
shown that
below the cut-off frcqueilcy the critical parameter which
determines
the reactance of the emitter circuit, is the ratio of the
base rb
to the emitter r resistance. The input reactance is
capacitive
for rb < 2 ABove the cut-off frequency the input reactance
is
T
T
e
apacitive. 45 refereuces. A:b tracter's note: Complete
always c s4
translation2
Card 2/2

Theory of the impulse properties of junction transistoru.
Inzh.-fiz.
zhur. no-5:59-66 My 160. (MIM 13!8)
1. Fizhicheskiy institut im. P.,N.Ijobedeva AN Moskva.
(Transistors)

ADIROVICH, E.I.
Input and transfer adnittance of a transistor under
unatead7
conditions. Insh..-fiz.rhur. no.7!28-36 Jl 160. (MIRA
13:7)
1. Fizicheskiy institut im. F.N.Lebedeva AN SSS-R, g.
Moskva.
(Transistors)

S/ /181/60/002/007/oo6/042
B006/BO70
AUTHOR: Adirovich, E. I~
TITLE: Electric Fields and Currents in Dielectrics
PERIODICAL; Pizika tverdogo tela, 1960, Vol. 2, No. 7, PP,
1410-1422
TEXT: In the introduction , the author discusses some details
of the
determination of the distribution of current, field, and
electron
concentration in a dielectric placed- between two electrodes.
The problem.
essentially, is to solve the system of equations (1), j =
const;
dE/dx = -n; dn/dx + nE = J, which contains the continuity
equation, the
Pois5on equation, and an expression for the sum of the
conduction and A-
d'Affusion currents. Results of Refs. 1 and 2 are discussed.
The author
gives a general solution of the system of equations for the
distribution
of the field and electron concentration, when a current due
to thermionic
and autoelectronic emission flows through a dielectric, This
solution
serves, above all, to determine the conditions of validity
and the range
of application of the formulas derived in Refs,, 2 and 3. The
diotribution
Card 1/3

Electric Fields and Currents in
Dielectrics
S/161/60/002/007/006/()42
13006/13070
curves obtained theoretically are shown in diagrams: Fig~ 1
shows the
distribution of electron concentration and electric field
strength in the
dielectric in thermodynamic.equilibrium. with the
electrodes; Fig. 2 shows
these distributions when a current passes through the
dielectric; and
Fig. 3 shows C(j) in the range 0:!~~ j ~ hichardson, (C =
n-E2/2 -jx),
Later, the thermionic emission is investigated in two
ranges: 1) the
range u>>l; this corresponds to a slight disturbance of the
thermo-
dynamic equilibrium in the system metal-dielectric-metal,
that means,
the range of small currents. Among others, an expression is
also given
for C(j) and the current-voltage characteristic, 2) The range
wl---- iu>>l; this corresponds to currents in the
dielectric, which are
limited by v.olume charges (u = -C2- (,+jx)3/2) . The
autoelectronic
3 lil
emission from the cathode is studied in the last part of the
work, The
system (49) is obtained, which describes the distribution in
the
dielectric'of ~, E, and n. It is analogous to the system
(33) which gives
the same distribution functions for thermionic emission,
With C 2 " T 'I'e"-
I>2 jhT ' , a kr
S1 hS S2
Card 4/6

S/161/~2/004/007/017/057
B102/B104
Ti T 10S Adirovich, E. I., Gubkin, N., and Kopylovskiy, B.
D.
- T I T L E lloasurezment of short 14. fet imes F~c-cordi'
n1-- to the Dhase
characteristic of the voltat-,e tlran~,miE~,,silon
coefficient in
circuit with a D-n junction
PEIRIODICC"L: ~,izika tverdo6o tela, v. 4, no. 7, 1962,
IbL),~-1662
TE-XT: Adirovich (FTT, 1, 1115, 1959) has proposed *~,hat
is called a phase*
method for measurint the relaxation times of electron
processes in
p-n junctions. This method i:iakes it possible to
determine l: from
wnich a~e two orders lower
electrical. measurements at freoLiencies
6- -10
an 1 It is of ii;iportance for -v-10- 10 and is free from
the
disadvantages of the other methods. Aere the theory of the
method is
considered &nd its application to determine the lifetime
of the
non-c!yzilibrium carriers at the base of p-r. junct-lons
in diodes wdth-thin
or thick bases is described in detail.. 7,he pus~-,ibj
lity and the conditions
of applyin- it t,.~ measure other relaxation times in p-n
junctions are also
Card 1/6

S/181/62/004/007'017/037
1,easurement of short lif etimes. B102/B104
discussed. 7 is determined from T =-2y/- = 5-56*10-31yol/V; y is
the phase
a. n _r 1 e 3" _n radians, y 0 the angle of the tranc.-mission
coefficient for the
-e,erator voltage in deC,rees, V the frequency and w the cyclic
frequency.
This relation olds if the inequalities
N., > No., (8) rk < ri., (12)
U
Itfl< (9) rj,c, < (13)
PO VD-c (14)
R Z
R > (11) < 1. (15)
are satisfied. E is the acceptor concentration in the emitter
region,
ap
the donor concentrution in the bi;se, v' the variable volta-e at
the
5n L,
p-r, j,_nction, q the absolute electron charCe, p 0 the hole
concentration at
the internhLse of base and volume charee reCion, R the load
resistance in
the a-c circuit, r i0 the low-frequency differential resistance
of the
card 2,

ADIROVICH., E.I.; YZIDKDI, V.M.
Failure of the reciprocity law in electric photography and
forms of
isoopacity. Zhur.nauch.i prikl.fot. i kin* 7 no.3*.187-194
Ky.-Je 162.,
(YJRA 15:6)
1. Fizicheskiy institut, imeni P.N.Lebedeva AN SSSR i
Institut,
kristallogrzLfii AN SSSR. i
(Xorograpliy)

1-7 -/020/62/145/001/008/018
B104/B102
I
OR S Adirovich,-R-
OTI Academician AS UzSSR, and
Kuznetsova, Ye. IM.
Effect of adhesion levels on the kinetics of electron
processes in p-n junctions
PERIODICAL: Akademiya. nauk SSSR. Doklady, v. 145, no. 1,
19629 67-70
T.:-.XT: A theory of a p-n junction in semiconductors with
adhesion levels
is developed. The croBs section of the-se levels and the
binding energies
are assumed to be arbitrary. The minority carrier kizIetics
in the
junction base (0 x