SCIENTIFIC ABSTRACT SKVORTSOVA, M.I. - SKVORTSOVA, R.I.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001651220012-1
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 24, 2000
• Sequence Number: 12
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

s/182/6o/ooq/roo3 0OV007
A16i/Ao2g
AUTHORS. Bark, S.Ye.; Koz1ova, A.V.; Kuvshinnikov, V.M.; Skvortsova, M.I.
Ustinov, V.A.
TITIE? Non-Oxidant Steel Heating in Continuous Three-Zone Furnace With
the Use of Oxygen
PERIODILCAL~,,~ Kuznechno-shtampovochnoye proizvodstvo, 1960, No. 3, pp. 28 - 33
TEXT.~ The article conta ns a brief discussion of the general design prin-
ciples of new heating furnacesNi'developed in the USSR (at TsN11TMASh, Teplopro-
Yekt, ZIL) and by "InciEd-escent" (British), working with heated air, and detailed
description of an experimental furnace using air mixed with oxygen and natural
gas, The advantage of the new design is its simplicity and dependable operation.
The furnace (Fig. 4, drawing) has three chambers, all 240 mm wide and 420 mm
high, with a 140 mm groove In the bottom. Steel blanks are pushed into the
grooves. There are 4 burners in the first 980 mm long chamber (design of the
burner described and shown in Fig, 2), The second 700 mm long chamber is'sepa-
rated by a wall from the first, and the products of incomplete combustion get in-_
to the second through an opening in the wall. The second chamber is separated
Card 1/3

S/182/60/000/003/004/007
A161/AO29
Non-Oxidant Steel Heating in Continuous Three-Zone Furnace With the Use of Oxygen
into two horizontal compartments by a carborundum platei incomplete combustion
products flow through it, and air is let in by a 40 mm diameter opening to con-
tinue combustion., Air is let also into the third 280 mm long chamber where com-
bustion is completed. Operation is controlled by throttle diaphragms. The fur-
nace frame is sealed tight, and covers in the vault are sealed with sand. Heat-
ed blanks move out through an opening in the bottom fitted with a special door.
The walls are screened off with duralumin sheets to keep down the temperature on -
the outside, The combustion products pass through a recuperator out of the
building, and a smoke exhauster on the way from the charging door prevents com-
bustion products from bursting out into the shop. The work capacity of the fur-
nace is 207 to 259 kg/h. Blanks are pushed in (by the pusher, "6" in Fig. 4)
every 2.5 min. The furnace operation is described. The data include the quan-
tities of gas and oxygen used,-- the temperature of air fed into the burners;
the chemical composition of combuBtion products In the -.hambers, etc. Metal
structure shown in two photographs (Figs, 6 amd 7) is obtained ( Ila") after non-
oxidant heating to 1,2500C, and ("b") after subsequent water quenching and nor-
ma-lization (packing in cast iron chips)- The furnace design has proved suffi-
Card 2/3

S/182/60/000/003/004/007
A161/AO29
Non-Oxidant Steel Heating in Continuous Three-Zone Furnace With the Use of Oxygm
ciently. good to start design development
cluded that in further work the furnaces
c~ frc,m 24 - 28 to 40%, and cut the oxygen
ffO/ton. Besides, regenerative furnaces
heated to 1,0000C and protective atmosphere
7 figures.
and output for the industry. It is con-
may be improved to raise their efficlen-
consumption from 50 - 60 to 35 - 4o
Tus-, be further studied in which air is
fed to the blank surface. There are
Card 3/3

Synthetic Zeolites: (Cont.) sov/6246
COVERAM: The book is a collection of reports presented at the First
Conference on Zeolites, held In Leningrad 16 through 19 March 2961
at the'Leningrad Technological Institute imeni Lensovet, and In
purportedly;the first monograph on this subjeot. The reports are
grouped Into 3 subject areass 1) theoretical problems of adsorp-
tion on various types of zoolites and methods for their Invisati-
gation, 2) the production of z9olltes, and 3) appilloation of
zeolites. No personalities are mentioned. Refereno*~ follow in-
dividual articles.
TABLE OF CONTEM
Foreword 3
Dubinin, M. M. Introduatlon. 5
Card 2/3d ~

Synthetic Zeolites: (Cont.)
SOV/16246
BarJc,-S.-.Ye.., N. V. Kel'tsavj I. P. OgloblinaCN. M.'
QS-ergeyeva, P6 I. Skvortaova, and N. S. Torochii-hnikov.
Ti~e--Appll~7a-t-i-o-n--o--F-S-Y-r-,Elie-tic Zeolltes as Molecular
Sieves for Preparing Proteztive Atmospheres 276
AVAIIABLE: Library of Congress
SUBJECT: Chemical Engineering
BN%f nW/j k
Card 13/63

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V4

V., I"
In

44

MsEre
u sa;~~iomkstTIR-WTTWi- Se c gs are-
s
subst"Ce to
cmib&ua~CLS-Au~;~ b6o4ja
-Add6d'4Q% bl,`Tbj~ lx*m- "grotin to a PO
which is
M H-C~6

CHUDARS, YA. (CudarB, J. 1; SKVORTSOVA, N.
Physical basis -for the determination of the moisture of peat by
the neutron method. Izv. AN Latv. SSR no-5:75-83 162.
(KW 16:7)
(Peat-Analysis) (Neutrons) (Moisture)

CHUDARS, Ya.[Gudars, J-1; SKVOR74 IVA, N.; MAKSIMOV, R.
Gomparisoll Of the possibilities of determining the moistl:Lm
Content Of building materials using neutron radiation anel
neutron backscattering methods. Izv. AN Latv. SSR no.10:
91-98 162. (MIRA 16:1)
1. Institut fiziki AN Latviyakoy SSR.
(Building materials-TestiRR)
(Neutrons) (moisture)

SKIIORTSO-VA , N. A.
Cand. Tech. Sci.
Dissertation: "Investigation of the Geometry of Internal Evolvent Gearing for
the Case when the difference of Gear-Tooth Mmbers is Unity."
28 Nov. 49
Mbscow Order of the labor Red Banner Higher Technical School
imeni Dauzan
.1 ffockva
SO Ve,%*_,1h,,-.,,,-_,,,"~Yq- M -,
8 u Fn 7 1

SKVO-TSOVA, 1'. A.
qInvestigation of the Geometry of Internal 'Evolvent
Gearing in a C.P.-tie 'Where the Difference of Gear-Tooth
Eumbers in Unity." Thesis for degree of Card.
Technical Sci. Sub 2P Nov 49, Motcow Order of the
Labor Red Banner Higher Technical School imen! Bauman.
Summai-y 821, 18 Dec 52, Dissertations Presented
For Degreep in Science and Engineering in Moscow
in 1949. From aqhtrn a a M skys. -Dec 1949.
y X_ _9 Jan

, , 4
T
Skyorc va, -RA- Internal involute_gtado"th tooth-
number difference of one. Akad. Nauk SSSR; Trudy.,
Mathematical Reviews Sem. Teorii IN-lagin i Mchanivriov 7, no. 25, 85-90 (1949).
Vol. 15 No. 3 (Russian)
March 1954 If z and z' are the numbers of teeth, and z -z'= 1, the!
Mechanics transmission ratio is z. The feasibility of large z forintenw
involute gearing has been questioned because sta hW
profiles cannot be user]. Using the~bob profile 61-GaVrilenko ~
[A geometric theory of involute gearing, Maggiz, 1949] the"
authoress has successfully produced gears of z=24, 31, 40,
49, and 100. A. lll~ 117tindhefter (Chicago, Ill.).

SKVORTSOVA., N.A., inzh.
Freight mooring of the Votkinsk Hydroelectric Power Station on the
.Kaz4a River. Energ. stroie no.26;68-,69 1619 (MM 15:7)
1. Stroitel'stvo Votkinskoy gidr6eloktrostantsii.
(Votkinsk Hydroelectric Power Station-Wbarves)

POPOVY S.A., kand. tekhn. nauk, dots.; LUKICHEV, D.M., kand. teklin.
naukY dots.,; SKVORTSOVA, N.A.- kand. tekh-n.neuk, dots..;
- N
NIKONOROV, dots.; MINUT, S.B.;,
dots.; RESHETOV, L.N., doktor tekhn. nsuk, prof.;
NIKOLAYEVSKIY, Ye.V., assist.; MASTRYUKOVA, A.S., kand.
teklin. nauk;
(Theory of mechanisms] Teoriia mekhanizmov; kurs lektsli.
[By] S,A.Popov I dr. Pod red. L.N.Rashetova. Moskva,
No.5. 1962. 123 P. (MIRA 16:7)
1. Moscow. Moskovskoye vyssheye tekhnicheskoye uchilishche.
(Mechanisms)

GAV-,tIIXrKO, V.A.,.doktor tekhn.nauk, prof. Prinimali uckastiye:
DAVIDOV, Ya.S.; SUORT30VA, N.A.; LURICHEV, M.S.; ?,Z'.-,EZOVA,
N.Ye.; ChASOVVIKOV, L. )-.-,-Ic-ancT-. tekhn. nauk, retsenzent;
DAVIDOV, Ya.S., kand. tekJLn. nauk, red.; I-W---NSMA, 1.1a.,
red. izd-va; UVAROVA, A.F., tekhn. red.
(Gear transmissions in the manufacture of machinery; theory
of involute gears]Zubchatye peredachi v irzshinostroenii;
teoriia evollveritrqkh zubchatykh peredach. Foskvaj Flashgiz,
1962. 530 P. (MIRA 15:11)
(Gearing)

SKVORTSOVA, N.A., kand.tekhn.nauk-, dotsent; LIJKICHEV, D.M., kand.tekhn.nauk,
-1--d-Of de-h t
Selection of parameters of involute internal gears, Vest.mashinostr.
44 no.3:3-9 Mr '64. (MIRA 17:4)

FLID, R.R.; SKVCHTSOVA. N.Y.
1e- I
Catalytic alkylation of benzene with dimethyl ether. KhRm. nauka i
prom. 3 no,'2:286-287 '58. OURL 11:6)
1, Moskovskly institut tonkoy khimicheskoy tekhnologii im. M.V.
Lomonosova.
(Benzene) (Alkylation) (Sther)

R oker,
Prot~ucticn of Mlethyl
of .01methyl Ester (Polucheniye
~` ~Z'
:.~,_Iro'hlorirovaniyem
SOV/130-5'1:1-1 -4 1/44
".S.
C I i-lo-Z-1 do by the Catalytic Hydrochlorination
L
khloriotob-o metila kataliticheskim
dimetilovotro efira)
Murnal prikladnoy khimii, 1.M, li'r 1, pp 236-2.~3 (USSR)
ABSTHACT; The ilimethy! ester is formed as a by-product in a number of
'-Q(.h.-olo-ical processes, and this rai3es the problem o" its
effective utilization. The authors show that it can be used
XIor obtaining methyl chloride in its catalytic interaction with
hydrogen chloride. The most active catalyzers are IT-A1203
(375 to 40000; CdCl, on the activated carbon AR-3 (775 to
3COOC) and ZnC12 on the activated carbon AR-3 (120 to 2000C).
At the volume velocity of 300 to 400 1/1 cat.hr the yield of
C11301 attains the following values: 95 to 9`~; 85 to 97c,' and
78 to 82~,~ respectively. A preliminary saturation of the cata-
Card 1/2 lyzer surface with hydrogen chloride is necessary for the main-

SOV/80-59-1-41/44
Prc~-;uc-~ion of `.'ethvi 'hioride by the "ataivlic Hvdrochlorinaation of Dimethyl
'er
tenance of high. activity of the proceSs.
There are 2 tables and 2 Soviet references.
SUB.'.IITTED: 13, 1957
Card 2/2

SUOYCISOVA) N.I.; CHUDARS, Ya.E. [C!vIzirs' J.]
Feasibility of determining the humidity of peat kr the neutron
method. Inzh.-fiz.zhur. 5 no.4.-58--63 Ap :62. 0"UFA 15:4)
1. Institut fiziki AN I4tviyskoy SSR, Riga,
(Pea+,-.Testing) (Neutrons)

IQ K VORTSOV! Cand C~hem bci
Dissertation: ,Syntlles~s cf the ':e,^ Analo's '-onone." 91~150
All-Un-Jon --ci -,c-s -Lnst of Synt~ietic in~' Nattiral~., Seents, of Food
industry USSR
I- I ,-
(zO Moskva
Sum 71

KONDRATSKIY, ..P.; SONOLINIKOV. N.Pi; SKVORTSOVA, N.I., kandidat khimiche-
skikh nauk, redaktor.
[Manual for laborator7 workers in essential-oil enterprises]
Rukovodstvo dlia laborantov efiromaelichnvkh predprilatii.
Moskva, Pishchepromizdat, 1953. 126 p. (MLFLA 7:3)
(Essences and essential oils)

BIWV, T.K., doktor khImIcheek1kh nauk, laureat Stallnekoy preiall; DLLIMAY, 2I.A.,
Anshener; nOO13, N.G., kauiAdat tekbniaheskikh wmk; POUNk. L.S..
tKnOdiat kh1michookft nouk; SUOMOVA K.I., kandidat khlisichaskikh nauk;
= 'T
RODIONOV, Vla&imir KlkbiVjoV alf," redaktor.
[Chemistry and technology of aromatic substances] Xhimlia, L tokhnologila
dushistykh vashcheStT.- Moskva. Goo..Isd-vo Kinisterstva legkoi i pishche-
voi promrshl.. 1953. 299 P. (KLU 7:1)
(Essences and essential oils)

USSR/C hemi a try --Aromatics
Card 1/1 Pub. 86--4/33
Authors S Belov, V. N., and Skvortsova, N. I.
Title I Aromatic substances
Periodical Priroda 43/11, 33--41, Nov 1954
Abstract A historical account is given of the extraction of perfumea from organic
material and the way in which this contributed to the dev6lopment of or-
ganic chemistry is pointed out. After the,chernical tormtilas of natural
perfumes were established, chemists succeeded in prod Iucing them syn-
thetically and then proceeded to the synthetization of aroniatic compounds
not found in nature.
Institution
Submitted

AUTHORS: Byelov, V. N.; Dayev, N. A.; Skvortsova, N. I.; Smollyaninova, Ye. K.
(Moscow)
TITLE- Progress in Phemistry of Parfuwas f Uspekhi khimii dushistykh veshchestv)
PERIODICAL: Uspekhi Khimii, 1957, Vol 26, Nr 1, pp 96-134
ABSTRACT: A review is presented of various research work in the chemistry of
perfumes and important semiproducts of their synthesis. The achievements
of various Soviet and foreign researchers are listed. One group of
Soviet chemists - Samokhvalov, Miropollskaya, Vakulova, Preobrazhenskiy
(10 - 12) have synthesized pseudoionone from methylheptonone through
condensation with ester of gamma-bromocrotonic acid by means of the
Reformatskiy reaction. The Lurie and Skvortsova team synthesized a number
of ionone analogues with more complex side chain in the C2 atom.
B. A. Arbuzov and Mukhamedova (47-48) prepared isomers and ionone
analogues with the methylene bridge in the cyclohexane ring and obtained
analogous products through condensation with ketones for campholene
aldehyde. A special section is devoted to the study of ambergris and
the synthesis of perfumes with the scent of amber. Soviet chemists
described the syntheses of three macrocyclic compounds: heptadecanolide
Card 1/3 from sebacic acid (75); dihydroambretolide from azelaic acid (76); and

Progress in Chemistry of Perfumes
consider that the extent of the research work carried on in this
direction is still insufficient to offer a rapid solution to the
complex problems facing the perfume industry.
Four tables; there are 217 references, of which 67 are Slavic.
ASSOCIATION:
PRESENTED BY:
SUBKITTED-
AVAILABLE:
Card 3/3

SOKOLINIKOV, N.F., inzh.; KONDRATSKIY, A.P., prof. [deceased]; VOTTKUNH,
S.A., kand.khim.nauk, retsenzent;-SUOH=Y,&,N.I., kand.khim.
nauk, spetared.; KALMS, R.I., red.; DOBUZHINS AS- L.T.,
takhn.red.
[Production of essential oils] Tokhnolo*giia efirommalichnogo
proizvodstva. Moskva. Fishchopromizdat, 1958. 201 p. (MIRA 12:6)
(Basences and essential oils)

MOLDOVANSKAYA, G.I.; IT-IVIKOVA, YS.11.; SKVORTSOVA, N.I.; ZOBOV, Ye.N.
Utilization of the polarographic method for the analysis of
orriB oil. Trudy VNIISEDV no.4:194-197 '58. (MIRA 12:5)
013,9sences and! essential oils-Analysis)
(Polarqe,rapby)

51'3) SOV/79-29-9-65,/76
AUTHORS: Skvorteova, N. I., Tokareva, V. Ya., Belov, V. ff.
TITLLP: t~nthesis of Ne-ro-lidol, Methyl N~rolidolt Farnesal and Methyl
Farnesal
PERIODICAL: Zhurnal obahchey khimii, 1959, V61'29P Wr 9, PP 3113-3117CUSSR)
ABSTRACT: Among the investigations published in recent years the synthesis
of the compounds with terpenoid structure, which are important
for perfumery, was carried out by using geran.*I' chloride M
B-chloro-2,6-dimethyl octadiene-206) and methyl geranyl chloride

II) (8-chloro-2,3 6-trimethyl octadiene-2,6) as intermediate
~
products (Refs 1-5~. Since there are good methods of synthesiz-
ing these chlorides and since they will be industrially produc-
ed in the near future the authors used chloride (I) and II)
for the synthesis of the following compoundB; nerolidol_~V)
2,6,10-trimethyl dodeoatrione-2,6,11-ol-10), metbyl-nerolidol
VI) 2,3,6,10-tetramethyl dodecatrione-2,6,11-ol-110), farnesal
~
VIIM,6,10-trimethyl dodecatriene-2,6,10-al-11), methyl far-
nesal (V111)(2,3,6,10-tetramethyl dodecatrions-2,6,10-al-11)
Reaction Scheme). The formation of geranyl acetone (III)
4,6-dimethyl undecadiene-2,6-on-10) by reacting geranyl
chloride with acetic acid eater is described in publications
Card 1/2 (Refs 5, 6). In the present paper the synthesis of geranyl

SOV/79-29-9-65/76
Synthesis of Nerolidol, Methyl Nerolidol, Farnesal and Methyl Farnesal
acetone and methyl gerany*l- acetone (IV) (2,3,6-irimethyl unde-
eadiene-2,6-on-10) was carried out without separation of the
substituted acetoacetic eater from the reaction mixture. The
transformation of the ketones (III) and (IV) into the tertiary
alcoholo (V) and (VI) was made by reacting these ketones with
vinyl magnesium bromide according to H. Normant (Ref 7)- The
transition from the tertiary alcohols (V) and (VI) into the
aldehydes (VII) and (VTII) took place via the alkyl regrouping
and the oxidation according to the method generally used for
ouch transformations (Ref 6). The constants of the synthesized
nerolidol and farnesal samples agree with those given in publi-
cations. Methyl neralidol and methyl farnesal have hitherto
been unknown. There are 12 references, 6 of which are Soviet.
ASSOCIATION: Nauchno-issledovatellskiy institut sinteticheakikh i natural'-
nykh dushistykh veshchestv (scientific Research Institute of
Synthetic and Natural Arcmtia Substances)
SUBMITTED: August 25, 1958
Card 2/2

BBWV, T.N., prof.; DAYFV, N.A.f-SPORTSOVA, H.I.
Achievements in and prospects for the development of the industry
of odorous substances. Zhur. VIMO 5 no.4:362-370 160.
(MIRA 13:12)
(Odorous substances)

C,,OAR, Ya. E.
"On the Possibility of Deter-mining the Moisture of Peat by the
Neutron 1-lethod"
paper presented at the All-Union Seminar on the Application of
Radioactive Isotooes in Aeasurements and Instruinent Building,
Frunze (Kirgiz SSk), June 1961)
So: Atomnaya Znergiya, Vol 11, 'to 5, NOV U., PP 468-470

SKVORTSOVII, !;.I,; TOKAMWA., V.Ya.; BELOV, V.N.
Oynthe8is of mathyl farnesol., farnesol, methyl farnesall and
farmsal. Trudy Vl,.IIISITV no.5:37-40 161. (MIPA 14:10)
(Farnesal) (Farnesol)

KARYAKIN, A.V.; TOKAREVA, V.Ya.; SKVORTSOVA, N.I.
Quantitative determination of v(- ands- ionones in their
mixtures. Trudy VNIISNDV no.5:72-75 61. (MM 14:10)
(Ionone)

SKVORTSCIIA, NJ.; BRENCII. T.A., BABUSHKINA., GUREVTCH, A.V.
Preparation of methylgeranyll chicride. Trudy VIIIISNE-11 no.6v
17-19 163. 4URA 17:4)

MELESHKINA, C,,V.-, SKIJORTSOVA, M.I.
libno synthesis ~n the preparation of odorous substaneus, Trudy
VNIIS'NU no.6,,21~25 163. (ICRAL 17;4)

BELOV, V.N.; SKVORTSOVA, N.I.
I - - ---,
Advances in the synthesis- of aftrons substances of isoprenoid
structure. Usp. khim. 32 no.3:265-304 Mr 163.
(MMA 16:4)
1. Voesoyuznyy nauchno-issledovatellskiy institut sintstio.
cbesklkh i naturallnykh dushistykh veshehestv (MISNDV).
(Odorous substances) (looprenoids)

BF.T C"J.
b-
and ot er cdc~rco- u
(MIRA 17~.'~,O)
33 04.
aL;
7~o t

PROMONENKCVP V.K.; 3K'VWr,;OVA, N.I.; V.N. (doe(jRsadl; KAMF!L':;KlY.,
A.B.; RODIONOVA, N.V.
Some transformations of 3-m--thyl-4-(cyclopenten-21--yl)buten-
2-al. Zhur. org. kbim. 1 no.8il431-1434 Ag 165. (MIRA 18:11)
1. Moskovskiy khimiko-tekhnologichoskiy institut Imeni
Mendeleyeva.

GOLIDBE'.,L) coktor idler_ nauk; IGLEI
130V.' L. kand. r-.iod. nauk;
DCIK-UCH~'_~_ EVA, V.F., kar-c'. =,ed. n~uk; FEE.:alll, A.A., kand.
med. nauk; ajjQ_ATSOVA, E.B., kand. med. nauk; F013ML=.,
N.G., kand. biol. nauk; SEUDMIKHRIA, D.P., kand. biol.
nauk; KII-111A, S.N., nauchn. sotr. Prinimal uchastiye
IIIEDOGILCHENKOY 1,11.K.; LYUDI'OV3KA7.,-7A, B.I., tekhn. red.
[1--lethodological instructions on the organization of research on
the pollution of air and the study of the effect of atmospheric
pollution on the health and s~,.nitary and hygienic living condi-
tions of the population] Instruktivno-metodicheslcie ukazaniia po
organizat:;ii issledovaniia zagriazneniia atmosfernogo vozdukha i
izucheniia vliianiia atmoafernykh zagriaznenii na zdorovIe i sa-
nitarno-gigienicheskie usloviia zhizni naseleniia. MoskvR, Med-
giz, 1963. 203 p. (MrRA 16:12)
1. Ru5sia (1923- U.S.S.a.) Vsesoyuznaya gosudarstvennaya sa-
nitarnaya inspektsiya. 2. Starshiy gosudarstvennyy sanitarnyy
inspektor Gosudarstvennoy sanitarnoy inspektsii Ministerstva
zdravookhraneniya SSSR ("for Nedogibchenko'j.
(Air--Pollution)

SKVORTSOV.A, mlqdshiy nauchnyy sotrudnik
Hygienic evaluation of carbon monoxide Dollution of air in the
vicinity of iron -plants [with summary in English). Gig. J san.
22 no.12:3-9 D '57 (MIRA 11:3)
1. 1z Institute, obahchey i kommunal'noy gigiyeny AM11 SSSR.
(AIER POLIUTION
by enrbon monoxide in vicinity of iron-works (Rue)
(CARBON MONOXIDE,
air pollution in vicinity of iron-works (Rus)

li. '., '. -., KLIND.11H,01t, 1 . ~., * T" Y " I
Y'OLII[T: )1 0 - : 'j ~ 1 11 , I r, . i , ,
J IUVA, A. ~'., ITJ~ OVA, A. I., ~,A,_FD?CRTj F. .'..
"llyg-tenic ~:tundlardizati-n cf the Content of "Incral Sult:j in
the Drinking ~dater."
report submitted at the 13th All-Union Congr-ss of Hygientists, Epideniologists
and Infectionists, 10,59.

SKVORTSOVII-i, N. N., C,,.ind oC :~:od L~,;I -- tdlss) "Hy,-enic Evaluation of the
PolutIon of the Atmosphore by Carbon Monoxide in the Area of Ferrous
Metallurgical Plants," Noscow, lv51, 15 pp (Acad of Med Sci USSR)
(KL, 5-6o, 130)

DOKUCHAYEVA, V.F., kand.med.nauk; SKVORTSOVA, N.N.p vi-ach.
vkmt*~i , -
Use gas correctly. Zdoravle 6 no..12:29 D 160. (K-M 13:12)
- (GAS BURNFIRS-SAFETT URES)

DOKUCHAYEVA, V.F., starshiy nauchnyy sotrudnik; qUORTSOVA N.N starshiy
naucbnyy sotrudnik -_ --- 1- -1-12
Contamination of the air by manganese compounds and their effect on
the organism. Pred.dop.kontsent.atmosf.zagr. no.6:68-80 162.
(MIRA 15:9)
1. Iz Instituta obshchey i kommunallnoy gigiyeny imeni A.N.
Sysina AM SSSR.
(MANGANESE COMPOUNDS-PHYSIOLOGICAL EFFECT) (AIR-POLLUTION)

AI-7-
FATNBb-RG, A.I., kand.ekon.nauk; DORBROVSKIT, A.A., kand.ekon.nauk;
POPOV, N.S., kand.ekon.nauk;-SKVOF2SOV.A. N.T., kand.ekon.nauk;
STROGANOVA, T.A., kand.ek-on.nauk. Prinimali uchastlye: BCLOTINA,
O.A., kand.ekon.nauk; GULIBINOVICH, M.I.. PROTSMTKO, D.I., red.;
SALAZKOV, N.P., tekhn.red.
[Economics, organization, and planning of municipal services]
Ekonomika, organizataiia i planirovanie gorodskogo khoziaiatva.
Pod obahchei red. A.I.Fainberga. Moskva, Izd-vo H-va kommun.
khoz.RSFM, 1959. 451 p. (MMA 13:2)
(Municipal services)

FEDOROVIGH, M.M., prof.; CHEREYSNff.Ay N.N.p dots., kand. ekon. nauk; NELIDOV9
I.Ye., dots., kand. tbkhn. nat, ; KOZIUNp L.P. p karwi. ekon. nauk;
HUMYANTSEVA9 Z.P., dots.p kand. ekon. muk; BUGROV9 Ye.P.9 doktor
tekhn. nauk, prof.; SKVORTSOVA. N.T.9 kand. ekon. nauk; FEDOROVI(Mg
M.M.p prof., red.; 9 ed.; PONOKAREVAp A.A.9 tekbn.
red.
[Mathematical metl~pds in Production planning] Matematicheskie wtody
v planirovanii proizvodstva. Moskva, Izd-vo ekon. lit-r7t 1961.
150 P. (KIRA 3-4:8)
1. Moskovskiy inzhenerho-ekonomichedkiy institut im. S.Ordzhonikidas
(for Fedorovich; Chereyskaya, Nelidov, Kozhin, Runyantsev, BWovp
Skvortsova)
(Economics, Mathematical)

SKVORTSOVA, N.T. .
Ontogenesis of leaves and comparative anatomical characteristics
of nine tomato varieties. Bot.zhur. 41 no-3:389-393 Mr 156.
(ML'SA 9; 8)
1. Leningradskly gosudarstvennyy universitet imeni A.A. Zhdanova.
(Tomatoes) (Leaves)

SKVORTSOVA, N.T.
Anntomy of the flower in HngnoliA grnndiflarn.L. Bot.zhur. 43
no.1:401-408 Mr 158. (MIRA 11:5)
1. LeninfrRdskiy gosudnrstvennyy universitet im. A.A. Zhdanovs.
KAgnolin) (Infloreseence)

SKVORTSOVA, N.T.
Structure of the epidermis in representatives of the family
Hamamelidaceae. Bot. zhur. 45 no-5:712-717 MY 160.
(MIRA 13:?)
(Witch hazel) (Epidermis) (Botany-Anatomy)

SKVORT60VA, N.T.
anatomical structure of the conducting system of petioles in plants
of the families Hamamelidaceae and nltlngiaceae. Doicl.AN SSM
133 no-5:1231-1234 Ag '60. (MBA 13:8)
1. Botanicheakiy institut imeni Y.L. Komarova Akademii nauk S&SR.
Predstavleno akad. G.N. Sukachevym.
(Leaves--Anatoor)
(Witch hazel)

SKVORTSCJVA, N.T.
Deaf venation in species of the family Famamelidaceae. Trudy
Len. khim.-farm. inst. 12:75-83 161. (111F,', 15:3)
1. Botanicheskiy institut imeni. V,L. Komarova AN SSSR,
Leningrad.
(WITCH HAZEL)
(IZAVES. -,ANATOMY)

SKVORTSOVA, N.T.
Morphology of the genus Famemelis L, Bot. zhur. 50 no.8:1143-
114S Ag .165. (MIERA 18:10)
1. Botanicheskiy inBtitut imeniW.L. Komarova AWSSSR, Ieningrad.

SKVORTSOVA, Nina Yakovlevna; SAORODOV, P.V., red.; PETROVA, O.B., tekhn.
red.
[What we get from the bybrid of forage cabbage with rutabagal
Chto nam daet gibrid komovoi kapusty s briukvoi. Petro!?,avodsk,,
Cos. izd-vo Karel'skoi ASSR, 1960. 15 P. (MIU 14:12)
1. Glavnyy agronom sovkhoza *Bollshevik" Sortavallskogo rayona
(for Skvortsova).
(Forage plants) (Hybridization, Vegetable)

SKVORTSOVA, N. Ye. and PENIN, N. A.
"The Properties of Germanium Detectors With a.Welded Contact
to
on Ultrahigh Frequencies, by N. A. Penin and N. Ye. Skvortsova,
Radiotekhnika i Elektronika, No 8, Aug 56, pp 1071-1079
The capacitance and resistance of the barrier layer of germanium de-
tectors with a welded contact in the interval from 1,000 to 6,000 mega-
cycles for different positive displacement currents were investigated.
It was demonstrated that the capacitance and conductance of the bar-
rier layer at high frequencies vary linearly with positive displacement
current and that the capacitance and resistance of the barrier layer are
inversely proportional to the square root of the frequency.
The experimental data obtained were in good agreement with the dif-
fusion theory of electron-hole transition., which takes into account the
injection of the nonequilibrium charge carriers.
In a footnote the following observation was made: "We couLft not follow
through the frequency dependence of sensitivity in a large interval of
frequencies because of the difficulty of measuring small quantities of
power in wide frequency ranges."
Sum 1258

AUTHOR MORTSOVA N-.E,.-- PA - 259o
TITLE C Study of Input Resistances and the Control of an Equivalent Scheme
of Germanium Detectors in the Frequency Range of looo ; 10 000 Mc/s.
(Issledovaniye vkhodnykh soprotivleniy i eksperimentalInaya proverka ek-
vivalentnoy skhemy Fermaniyevykh detektorov v diapazone looo - loooo Mgts
Russian)
PERIODICAL Radiatakhnika i Elektronika, 1957, Vol 2, Nr 3, pp 296-31o (U.S.S.R.)
Received 5/1957 Reviewed 6/1957
ABSTRACT This work was undertaken for the purpose of examining the possibility of
using a scheme with germanium detectors within the range of from looo to
lo 000 Mc/s and to determine the dependence of the input resi3tance of the
detectors OA frequency, the type of excitation, the specific resistance of
germanium and the peculiarities of detector construction. Aim equivalent
electric scheme with the usual detector construction was used. The amount
of the capacity and the resistance of a rectification current was deter-
mined in two different manners by the application of the theory of the li-
near passive fourpolo, Herefrom the amount of the elements of the equiva-
lent scheme were then computed. The theoretical analysis of this scheme
showed that the increase of the capacity of the detector shell of from
Oto 0,25 nF causes no essential modification of the input resistance of
the detector within the centimeter range of the waves at a wave length of
less than 5 em. A modification of the order of inductivity of the contact
wire, the capacity and the resiitance of the rectifying layer offers the
possibility of modifying the input resistances of the detectors within a
Card 1/2 wide r2nge.The detectors within the 5o Ohm line in most casea have a co,

AUTHORS: Penin, I.I.A. and &,vortsova, -',.Ye. 109-3-2-15/26
TITLE: Impedance of the Rectifying Junction of Germanium and
Silicon Detectors at -Ultrahlglf Frequencies (Polnoye
soprotivleniye vypryamlyayushchego 11-ontakta Cermaniyev~kh
i kremniyevykh detektorov na sverklivysokikh chastotakh)
PERIODICAL: Radiotekhnika i Elektronika, 1958, Vol.II, No 2,
pp. 26? - 2?5 (USSR).
fiLE S TR &CT The impedancc was measured by two methods. In the
first method, the impedance was determined by measuring the
h-igh-frequency impedance,~R& (see Ref.1). In the
L _itk detector
second method, a special/compensating transformer vias employed.
The transformer, tuned to a Fiven wavelength in such
a way as to obt * ansforration ratio equal to unity, was
ccnnecte(~ at thM!e getector holder.. The tuning of tne trans-
former was also arranged in such a way as to compensate all
the reactive elements of the e4uivalent detector circuit.
Under these conditions, the load of the coaxial line was eoual
to the impedance of the rectifying junction plus the series
resistance of the semi-conductor wafer. The trimming of the
transformer was done by means of three detector cartridges.
The measurements were carried out at wavelen~-ths ranging -rom
C..di/330 to 6 cm by means of a coaxial line having a wave impedance

109-3-2-15/26
I.L-oedance of the RectifyinF Junction of Germanium. and Silicon
Detectors at Ultrahigh'Frequencies
of 50 9 . The investigated detector was situated in a coaxial
holder and the capacitance and resistance of the rectifying
_,ayer were determined by measuring the real and the imaginary
comDonents, x and y , of the rectifying junction impedance.
The positive biassing currents employed in the investigations
,T-,ere in the range from 0 to 20 mA. The results are given in
Figs. 1, 2, 3, 4 and 5. The curves of Fig.1 represent x and
y components for a germanium detector having a soldeied point
contact and a resistivity of P = 0.006 Qcm as a function of the
biassing current I ; Curve 1 was taken at a wavelength
X = 6.12 cm, Curve 2 at X = 21.2 cm and Curve 3 at X = 30 cm
Curves of x and y as a function of I , at X 6 12 cm,
a-re shown in Fig.2 for the following values of p i) 9 =
0.006 Qcm, 2) 9 = 0.02 Qcm and 3) t-~= 0.2 Qcm. Fig. 3 shows
the same parameters as in Fig.2, except that the measurements
were made at X = 30 cm. Values of X and y as a function
O-P I for a germanium detector fitted with a pressure-type
contact are shown in Fig.4, while similar curves for a silicon
detector type j:~K-B2 are given in Fig.4. Theoretically, the
iia-,.)edance of a semi-conductor junction can be represented by
-1
Card2/34-he eauivalent circuit shown in Fig.6, where R, CD and C S can

109-3-2-15/26
Inpediance of the Rectif:yin- Junction of Germaniur, and Silicon
Det-ectof:~ at Ultrahigh Frequencies
be expressed by Eqs.(l), (2)
these equations, S is the
permittivity of germanium,
i-,-.L the n-reL,ion, tpk is the
and (3), respectively; in
area of the contact, e is the
V is the donor concentrition
gontact potential differ,.nce
and
Co = S eqITd
8TPK
An analysis of the above expressions and a comparison ~.,ith
7
the experimental results show that the theory is in Cood
a6reement with the measurements. The theoretical and experi-
mental results are compared in Fie.?. There are ? fit~ures,
1 table and 4 references, 3 of which are Russian and 1 English.
SUBLITTED: May 28, 1957
AVAILABLE: Library of ConCress
Card3/3 1. Germanium-Detectors
Measurement
2. Silicon-Detectors 3. Impedance-

5OV/58-59-Y-16214
Translation from: Referativnyy Zhurnal Fizika, 1959, Nr 7, P 227 (USSR)
AUTHORS- Rusin, F.S., Skvortsova, N.Ye.,,.,Sokolov, Yu.F.
TITLE: Methods for Determining the Parameters of the Rectifying Contact of
Point Microwave Detectors
PERIODICAL: V sb.: Poloprovodnik. pribory i ikh primeneniye. Nr 3. Moscow, "Sov.
radio", 1958, pp 13 - 30
ABSTRACT: The authors describe methods for determining the basic parameters of
the point contacts of microwave detectors:*'-'5They estimate the maximum
microwave power that is p!~rmisslble under the described measurement
methods, They describe methods of measuring the impedance Z of the
rectifying contact, from whose dependence on the constant displacement
current it is easy to obtain the values of Co (the charge capacityr)
r (the resistance against fanning out through the thickness of the
Card 1/2 semiconductor), and r (the lifetime of the minority carriers). They

AI
sov/58-59--7-16214
Methods for Determining the Parameters of the Rectifying Contact of Point Microwave
Detectors
provide a method for determining the parameters of the rectifying contact from the
dependence of the detector's voltage sensitivity,. ~w on the constant positive dis-
placement current,
The authors' r6sum6
Card 2/2

JOV-109-3-4-12/28
AUTHORS:Penin, N. A., Rusin, F. S. and Skvortusova, N. Ye
TITIE: Input Impedances of Germanium bLnd S-171-63n-rMffcturs at
Centimetre Wavelengths (Vkhodnyye soprotivleniya. german-
iyevykh i kremniyevy1rh detektorov v diapazone . Santimet-
rovy~:h voln)
-PERIODICAL: Radio te!Lnnika i Elektronillm, 195-3, Vol 3, Nr 4,
PP 543-546 (USSR)
ABSTRACT: It is assumed that the equivalent input circuit of a
rectifier diode can be represented by a parallel input
eaDacitance C n -w a series inductance L and an RC circuit
re-Dresentins the impedance of the rectifying junction. The
elements Cn and L represent the inter electrode capaci-
tance and the whisker inductance of the detector, and they
are independent of the currents passing through the detector,
(D C)
The junction resistance R and the capacitance C D Plus
C (see Fi-.1) are functions of frequency and the biasing,
z CD
Card 1/3

30V-10~)-3-4-12/28
In-ciut Imo-edances of Germanium and 3iiicon Det-ectors at Centiraetre
Waveleng~hs
currents passing through -the junction. The overall input
impedance of the detector is expressed by Eq.(l). The
elements R. C D and C z are expressed by Eqs.(2) and
where
C zo = S
=8
is the charge capacitance in the absence of an external
bias, 0 is the contact areal (Pk is the contact potential
difference, I is the current passing through the contact,
Is is the saturation current of the junction and x is the
effective lifetimes of the charges. Eq.(l) can be used to
construct the impedance locus of the detector. The result-
inn, imDedance circle is expressed by Eq.(4); the centre of
the circle is -iven by the coordinates ex-pressed by Eqs,(5)
and (6), while the radius of the circle is determined from
Eq.(7). Eq.(4) was used to construct the impedance loci
Card 2/3 for a .-ermanium detector havinc-, a resistivity of 0.006.cLcm

3Ov_jo9-~,--Lt-12128
." P
inr)ut Impedances oLP G,~~rmanium and Silicon Detectors at Centi-mmeur-
Wavelen-ths
for viavelengths of 21, 6.2 and 3.2 cm. The resulting curves
are shown in Fig.2. The impedances of the same detector
were measured experimentally and the results are also plotted
in Fi-.2. It wa; found that there was a good agreemen; be-
tween C~ the calculated and the exDerimental results. Eqs.(l),
(2) and (3) were used to determine the frequency dependence
of the detector input impedance and the resulting curves are
shown in Fi-.3. The author exl)resses his gratitude to
0
S~ G. Kalashnikov for valuable advice and constructive
criticism. The paper contains 3 figures and 4 references,
of which 3 are Soviet and 1 English.
3UBMITTED: 01ay 281 1957
1. Detectors (RF)--Impedance 2. Impedance--Measurement
3. Germanium--Applications 4. Silicon--Applications 5. Mathematics
--Applications
Card 3/3

T "s -v' N
9(4) 24(6) PHASE I BOOK.EXPLOITATION SOV/1765
Vsesoyuznoye nauchno-tekhnicheskoye obshchestvo radlotekhniki I elek-
trosvyazi
,Poluprovodnikovaya elektronika (Semiconductor Electronics) Moscow,
Gosenergoizdat, 1959. 222 p. 13,950 copies printed.
Ed:.: V.I. Shamshur; Tech. Ed.: K.P. Voronin.
PURPOSE: The book Is intended for engineering and technical personnel
. working with semiconductor devices.
COVERAGE: The book is a collection of lectures delivered at the All-
Union Seminar on Semiconductor Electronics in March 1957. The
seminar was organized by the Scientific and Teckinical Society of
-Radio Engineering and Electrical Communications imeni A.S. Popov.
The authors of the lectures have attempted to systematize the basic
information on the oDeration of semiconductor devices. The articles
describe the operation and characteri5ties,.-of crystal diodes and
transistors and discuss their application in various low-frequency,
high-frequency and pulse circuits. NO Dersonalities are mentioned.
References appear at the end of each article.
Card 1/7

Semiconductor Electronics
TABLE OF CONTENTS:
Foreword
SOV/1765
3
Ye.I. Gallperin. Basic Physical Concepts 5
The author discusses the physical aspects of semiconductor ma-
terials. He describes the atomic structure of the various ele-
ments and presents a discussion of energy levels in metals-and
dielectrics. There are 13 Soviet references (including 4 trans-
lations).
N.A. Penin. Electrical Properties of Semiconductors 25
The author gives a brief description of semiconductors, such
as selenium, tellurium, and germanium. Particular attention is
paid to the atomic structure of germanium crystals and to con-
duction in crystals with and without impurities.
N.Ye. Skvortsova. Semiconductor Crystal Diodes 32
The aiith)r discusses the construction and operation of point-
contact and junction-type crystal diodes. She also presents
methods of making rectifying contacts and describes the effect
%lard 2/7

Semiconductor Electronics
SOV/1765
of temperature on diode operation. There are 2 Soviet references
(including 1 translation).
Ya.A. Fedotov. Triode Transistors 42
The author briefly discusses the theory of junction-type and
point-contact transistors. Chief attention is given to the
theoretical and operational aspects of junction-type transistors.
The author discusses the characteristics of junction-type triode
transistors and describes the effect of frequency on transistor
parameters. He also describes transistor power amplification and
discusses methods of obtaining high operating frequencies. A
brief description of junction-type tetrode transistors is also
presented. There are 7 Soviet references (including 5 transla-
tions).
Ye.I. Gallperin. Triode Transistor as an Amplification Circuit
Element 87
The author discusses the construction, operation and applica-
tion of triode transistors. He describes various methods of
transistor connection and gives expressions for equivalent cir-
cuits and transistor parameters. There are 6 Soviet references
Card 3/7

Semiconductor Electronics
(including 1 translation).
SOV/1765
V.I. Gevorkyan. Stabilization of Power Supply Circuits of Triode
Transistor Amplifiers 105
The author discusses methods of stabilizing the operation of
bias circuits and describes an analytical method of calcula-
ting transistor performance. He also presents a graphical
method of determining the quiescent point and discusses tran-
sistor circuits with automatic bias. There are no references.
A.G. Fill1pov. Direct-coupled Amplifiers 117
The author describes the operatlon of d-c transistor amplifiers
and discusses their operating characteristics. He also describes
methods of stabilizing transistor operation by using negative
feedback, balanced and bridge circuits, There are 10 references
of which 1 is Soviet and 9 English,
Yu.I. Konev. Triode Transistors In Amplification Circuits of Servo-
mechanism Systems 132
The author discusses the application and operation of transis-
tors in servomechanism circuits. Emphasis is placed on a di5-
Card 4/7

Semiconductor Electronics
sov/1765
cussion of servomechanism transistor components, such as a-c
amplifiers, modulators, and phase-spnsitive amplifiers. There
are 7 references of which 6 are Soviet (Including 1 transla-
tion), and 1 English.
A.A. Kulikovskly. High-frequency Transistor Amplifiers 151
The author discusses equivalent circuits of high-frequency
transistor amplifiers and describes methods of calculatIng
their parameters. He describes the operation of interstage
resonant circuits and examines the effect of f--.edback in tran-
sistor circuits. He also discusses transistor stability, sta-
bilizing networks for the internal feedback in transistor cir-
cuits and the noise factor. There are 15 references of which 3
are Soviet, 1 German and 11 English.
T.M. Agakhanyan, Transient and Frequency-Phase Characteristics of
a Junction-type Triode Transistor 173
The author discusses transient, frequency and phase character-
istics of Junction-type trIode transistors. He also derives
expressions for transfer functions for various types of tran-
sistor connections and describes the equivalent circuit for high
Card 5/7

Semiconductor Electronics
SOV/1765
frequencies for a junction-type triode transistor. There are 8
references of which 2 are Soviet (including 1 translation), and
6 English.
T.M. Agakhanyan. Triode Transistor Video Amplifiers 187
The author discu3zes linear and nonlinear distortions in tran-
sistor video amplifiers and describes circuits with complex
feedback and current distributing networks, A brief discus-
sion of multistage amplifiers is also presented. There are 2
references, both Soviet,
B.N. Kongnov. Trigger and Relaxation Circuits Using Junction-type
Triode Transistors 197
The author describes the operation and characteristics of sym-
metrical triggers and multivibrators using junction-type tran-
s�stors. He also discusses their stabillty and derives expres-
sions for calculating transistor &ircult performance. There are
4 references of which 3 are Soviet and 1 English.
G.S. Tsykin. TrarS15tOr Inverter of D-C Voltages 208~
The author discuezes the operation and characteristics of in-
Card 6/7

Semiconductor Electronics
SOV/1765
verter circuits using transistors. -.Special attention is'given
to the operation and design of Inverter circuits with a signal
generator. There are no references'.
B.N. Kononov. Voltage Stabilizers Using Semiconductor Devices 215
The author discusses voltage stabilizing circuits using sili-
con crystal diodes and transistors. He also explains equations
for series and feedback stabilization and discusses transistor
stabilizing circuits with temperature compensation. There are
4 references of which 1 is Soviet and 3 English.
AVAILABLE: Library of Congress
JP1sfm
5-26-59
Card 7/7

N435
S/j-u '61/'Vuu-/012/010/020
Lf 3 Y/ ro) D246YD205
-tao-ra p-li-i-e-p -and Sokolov, Yu-ir.
AUTHORS; ivanov, b.N.t Skyor
TITLE: Frequency characteristics of welded contact germaniuni
diodes at inverse voiiages
PERIODICAL: Radiouekhnika i elektronika, v. 6, no. 12p !961
2028 - 2035
TE,&T: ln Lhe present arLicie the frequency.characteristics are
analyzed of n- and p- type Ge diodes with welded coiitact (with
Iss
half-sphere geometry). The diodes were manufactured by the proCe
described by the authors previously (Ref. b: hadiotekhniKa i elek-
tronika, i959, 4, 9P 1598). Diodes with uiintic contact were also
investigated, juade of p-type Ge by the same process as those of n-
type. it Way be' assunied that the geometry of onwic contacts and
contacts with barrier layer are the same, i.e. -that the series re-
sistance r in ooth types is -uhe name. The characteristics were in-
Vestigated n the equivalent cir( tit of the diode consisting of
the series resistance r., conr-ected in series with a parallel com-
Card 1/0.

310 4.3) 5
S/109/61/006/012/UlO/020
Frequency characteristics of welded D246/D305
bination of R-leakage resistance and C-capacitance. At low frequen-
cies r 0 was measured by extrapolating the resistance in the for-
si
ward direction. With current varying between 100 and 500 microamDs.
no modulation of conductivity has been observed. The SHF measureL
ment of contact impe-dance Z was carried out between 3 x 109 - 6 x
10 10 see -1 by the metliod given by Yu-F. 6ok-olov (Ref. '1: Radiotekh-
nika i elektronika, 1961, 6p 3P 399) and by F.S. Rusing N.Ye. Skvo-
rtsovat and Yu.F.'6okolov (Ref. 8: Sb. Poluprovodnixovyye pribory
i ikh primeneniye, 1968, 59 13) using the above mentioned equiva-
lent circuit. Three methods are suggested of measuring r S* 1) De-
termining r s from the measurements of resistance of diodes with oh-
mic contact Z 0m ; 2) Determining r s from the extrapolation of ReZ
towards larZe current; Determining r from the value of C which
is given by
ge
, I/ eqN
~C(U)= 2 Ta (I _p 5)
U)
Carc[ 2/0

30435~
S1199161/006101210101020
Frequency characzerisiics of welded D24ol-D305
in which E - specific inductive capacitance; q - charge ofelecTron.
N - impurity concentration in the n-region; y., - contact potential
difference, from which r S-VU = const. The experimental results
show that the character of basic properties is the same for n- and
p-type germanium. Tne results of measurements of r a are tabuiated
in Tables 1 and 2. The capacity of the barrier layer C and the ieak-
age resistance R has been found to be independent of frequency and
proportional -c-o (rfx + Urev )-12 or, as expected, it is a charge ca-
pacitance. The evaluation of K is stated to be possible only for
dioaes, for which The -Loss resistance R I is much larger i,-han r.9
it has been found To be directly proportional to -the reverse voltage
and is of the order of/,jlo3 ohm for The given frequency range. Tne
frequency depencence of the loss resistance is shown in Fig. 7. The
re5UltS obtainea show therefore The following: 1) r a in contrast io
rU is independent of frequency in a given frequency range. It can-
Si
not be explained by -Ghe modulation of the semi-conductur condUCLan-
Uarcl 3/0

N435
S/lu-9'61/006/012/ulu/'020
Frequezicy characteristics of welded ... D240~/D305
ce, If r8 = p/.,r, d, and p - Laodulation do not exist,, lit- has to be
assumed -that, changes in rs are determined by those uf d. in facz
-the expressiun ror r s shouid be
r = P
s 171-d +2L0)
where 1,0is the iengih of the diffusion path. A-t, high frequencies
tHe aiffuslon component of bHi4l curr~_-nt is Limited by The rerion of
technological oouridary uf transitiun L -,J -VF/-W. oince it la-ay Ue
CD W
shown -chat LW