SRI DATA ON CHINESE PHOTODIODE EXPERIMENT

• Document Type: CREST
• Collection: STARGATE
• Document Number (FOIA) /ESDN (CREST): CIA-RDP96-00792R000300280001-4
• Release Decision: RIPPUB
• Original Classification: K
• Document Page Count: 22
• Document Creation Date: November 4, 2016
• Document Release Date: April 6, 2000
• Sequence Number: 1
• Publication Date: November 22, 1981
• Content Type: HW

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Tbe Qtran6e Ihenomuna of raranormal lunotions of ?
tut linman ,Dooy Affecting on a rhotosensitive liode
by Zheng Tian Man Lin,Luo otin,olu Jun,Chen auo Choi
(Yunnan University) Li Hong Yi (luban University)
Ahltria.1
The etrange phenomena produced on u photoseneitive diode held in
tne palm of a child with paromormal function ore report in this
poper.The Characteristic-Curve Tracer indicates thot by concentrot-
ing their mind upon their palms,or "working",the children with
parouormal function can emit unknown rodiation,which can induce ob-
normal cnange in the photosensitive diode and alter the charocter-
istic curve thereof.Tne chief feotures of toch cnanget are as
follows:
1.A negative emf ie produced even when the photosensitive diode
ie covered with a piece of black poper.
2.The back resistance is conspicuously reduced and the leokoge
current increaeed surprisingly.
.0.The cloted loop of the reverse choracterietic curve which ie
due to tri t defects of the dipole is subject to phase chonget during
tut "working".
'4.inere is nu apparent difference in the above mentioned phenomena
during the course of the experiment whetter 4 piece of olack paper
is ploceo between the diode and the palm or not.
5.The charocteristic curve is restored to its normol state when
the child stop r hie or her "working".
After mogrifying the poronormal change with o.rudiometer omplifier,
the output potential variations are displayed with an X-Y record.
It is found thut the unknown radiation ie closeby relpted to the
paranormal function.The following importont features ore onserved.
1.The children with paranorlal function produce nolotive readings
on tne rodioneter in comarison witn the positive reodings obtained
wnen light rodiotion is received.
2.Tbeoe ore diffetrebces of 2-u order of magnitude in the potentiol
chonges producea between normol clikgren and those tilted withlporo-
normal functions.ThOlotter are 10=11Y1whereor the former are 10-1C!'
.;o.The results obtoined when the &lifted children ore "working" nnd
when they are not "working" with the diode are conspicuously differ-.
ent.Tne values are zero when tuey are not "wol.King".
4.11/nel, the gifted cnildren were in the course of recorgnizing
hiocen letterspor practising telepotby or knotne curves on tne
recorder are clusely rulateu to tnose ditprayeo in toe course of
"working" with the diode,rising from the beginning of "working" and
oropping to tele zero level at tne trICI Ur, "working".
5.1inen the gifted children were matching the recoroing ppparatus,
the rerulting reoaings were nigher.It stems thot tnere ol;pet?red L;r1
action of conscious fecawuct.
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osTnei.e are great oifferencer in tne graptic recordiuo
tor oilierent individiair among tne gifteo chiioren.
7.1n comparing mearurement on the A-Y recoruer for mind
CenceullatiOn upou lute paLme oetween praCtitionere of ChineEe
martiLA arta Lino tut baitec vhildrenstne children ahoweu eigher
meaeurcaeu?a ou weruze,although u few martiul urta prac-
titioners aiso scoreo high.
lue aoore rtslte indicate taut tue photoseuertive alone is
L Suitt:Luta oevice tor mez.,suread oujectively toe iofor-
mtion eoitl?u 4,4 cLildron with parunormal futivtone.
pauiished in *bai.ure Journal" 4.6.(1661)
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TAB
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THE STRANGE PHENOMENON OF PARANORMAL FUNCTIONS OF THE HUMAN BODY
EFFECTING ON A PHOTOSENSITIVE DIODE:
ANALYSIS AND RECOMMENDATIONS FOR FURTHER STUDY
Experimental Procedure
Based upon the abstract provided, original figure captions and
the following experimental procedures
and apparatus appear to have been utilized for the first set of experiments:
? A photodiode with a sensitivity of 10-7 watts cm-2
in a bandwidth of 190-1100 nm was used. From Sze
(Figure 24 on attachments) we expect this to be a
silicon device.
? The photodiode was contained in a "well" of some
sort surrounded by a "protection ring" and covered
with black paper. At present the thermal and
electrical properties of this encapsulation are
unknown.
? A characteristic curve tracer (Model JT-1) was used
to reverse bias the diode and measure its voltage-
current response under various conditions.
? The curve tracer was set up so that the voltage
axis was .5 V per dimension and the current .01 mA/div.
Diode breakdown (the "knee" of the curve) was -6V with
a 1 Kn current limiting resistor.
Each subject then held the photodiode assembly in their palm and attempted
to influence the device. Successful experiments were marked by change in
the I/V characteristic from that typical of a diode to one more like a
resistor with some parallel capacitance as seen in Figure 2b. In fabri-
cating prototype diodes this type of curve is seen quite often when the
"blocking" contact fails or the diode is partially shorted by conductive
surface states.
Physics of Semiconductor Devices, S. M. Sze.
Figure number used in original Chinese text.
1
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A second set of experiments was carried out with apparently the same
type of photodiode:
? The output of the diode has been amplified by a
"radiometer" amplifier. It is not clear whether the
diode is reverse biased or used as a solar cell with
only the carrier diffusion length as an active volume.
? With "normal" children the amplified output was 10-5-10-6
W/cm2.
? With "exceptional" children bursts of signal (noise?)
were observed up to 10-2-10-3 W/cm2 over periods of
several minutes.
Analysis
The results of both sets of experiments are open to several explana-
tions due to the ambiguous nature of the experimental procedure.
? The change in I/V characteristic could be due to simple
heating of the diode. Attachments one and two both show
how leakage current varies with temperature. A 10?C rise
above ambient could be expected from a hand-held device,
resulting in a larger leakage current. In addition, the
breakdown knee will sometimes move toward lower voltages
as the temperature rises resulting in noise or breakdown
bursts. Finally, surface states which are not seen at
room temperature may become active at higher temperatures
resulting in the hysteresis seen in the "exceptional"
I/V characteristics.
? If the diode and its container are not adequately
electrically shielded, the effect of holding the
assembly in one's hand would be to add components
of stray resistance and capacitance to the output
signal. This effect would be similar to that shown
in Figure 2b. Anyone who has worked with electrometers
is familiar with this effect. The usual cure is to use
BNC connectors and coaxial cable.
? Finally, the infrared radiation associated with a black
body at skin temperature (310K maximum) might cause
some of the signals seen in the second set of experiments.
In particular, a warmer than room temperature diode could
2
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be operating in an already high leakage condition whereby
extra input (static charge, IR radiation) might initiate
carrier avalanche--yielding large noise bursts. Attached
are several pages of figures and calculations which
demonstrate that the sensitivity of the detector lies
clearly in the IR region. Furthermore, application of
the Stefan-Boltzmann law demonstrates that 5 x 10-3 W/cm2
may be available from a black body of 10% efficiency.
However the peak of the distribution falls at about 9-10 p.
At this wavelength neither a silicon or germanium diode
is very efficient. This result suggests one of the two
preceding mechanisms as a more likely candidate.
3
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WAVELENGTH (MICRONS)
Fig. 24 f 7Z
Effective quantum efficiency (hole-electron pairs/photon) versus wavelength for Ge
73-Srphotodetectors.
(After Melchior and Lynch, Ref. 39.)
Ipo(w)
(a)
7-2
LR
Fig. 25
(a) Equivalent circuit and
(b) noise equivalent circuit of a photodiode, where R Is the series resistance and C is the
junction capacitance.
(After DiDomenico and Svelto, Ref. 35.)
4 Photodetectors
available power for the photo
= ?8 lipD(0))1
It is interesting to compare E
For a typical photodiode with
a photoconductor with the sat
available power from the phot
from the photoconductor.
The signal-to-noise perforn-
equivalent noise circuit shown
noise source due to the seriei
source. The signal-to-noise ral
?
41
Comparing Eq. (44) with Eq.
at high-level detection where
SNR is comparable; at low-lev
however, the SNR of the phu
B. The p-l-n Photodiode
depletion-layer photodetector,
(the intrinsic layer) can be tai
frequency response. A typical
Fig. 26(a). Absorption of ligh
pairs. Pairs produced in the de
will eventually be separated by
external circuit as carriers drif
Under steady-state conditioz
biased depletion layer is given
where Jd. is the drift current
region and idiff is the diffusior
side the depletion layer in the t
reverse-biased junction. We E
assumptions that the thermal g
surface n layer is much thinn,
electron generation rate is giv(
_
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Approved For Release 2000/08/11: CIA-RDP96-00792R000300280001-4
DETECTORS AND DETECTOR SYSTEMS
SILICON CHARGED-PARTICLE DETECTORS
characteristics. The detector changes include in-
creased noise and changes in voltage drop across the
load resistor, which require adjustments to the applied
bias voltage, which in turn change the electric-field
strength. Thus carrier trapping and increased detector
noise are degrading to energy resolution.
Resolution degradation appears as a broadening of the
response for a monoenergetic source. With increasing
doses of neutrons, charged particles, or fission frag-
ments, the low-energy side of the response peak may
begin to show a definite secondary peak. Continued
irradiation results in further broadening, until, in ex-
treme cases, the multiple peaks may merge com-
pletely. Electron bombardment tends to increase leak-
age current, resulting in excess detector noise, which
broadens response peaks. Some of these damage ef-
fects may undergo a degree of annealing, but there is
always a significant residual deterioration after a suffi-
cient dose has been accumulated.
Partially depleted detectors are more susceptible than
are fully depleted devices to deterioration from radia-
tion damage. Radiation damage for different types of
detectors are compared in Table 2, which gives the
dose for various particles to significantly deteriorate
the detectors.
OPERATING TEMPERATURE
As a rule of thumb, increasing the operating tempera-
ture of a charged-particle detectols.a_iisatelealsags
current to incrose b a factor of 3 for eqch 10?Q.rise,
fauTtin in a noise width ingLease ptagProirnatelY.lJ
1_5sypriQTTEipper temperature limit is deter-
mined by the maximum acceptable noise or by the
ultimate breakdown of the detector (usually between
45 and 55?C). The effects of high-temperature break-
down are permanent and are not covered by the war-
ranty terms. An additional effect is the shift in detector
bias caused by the higher leakage current. This leak-
age current increases the voltage drop across the se-
ries bias resistor, thus lowering the bias voltage across
the detector. When high-temperature operation is
necessary, a constant sensitive depth is maintained
over the entire operating temperature range only if a
totally depleted detector is used with sufficient
overbias to compensate for the drop across the series
bias resistor, which should be as small as possible
(usually 1 to 3 nin is adequate).
Decreasing the operating temperature of the detector
reduces junction noise and leakage current. However,
the capacitance of the device is a constant limiting
parameter of the system noise. Another limitation to
successful operation at low temperatures is the expan-
sion coefficient of the detector's component parts. The
expansion coefficient is similar for silicon and for lavite,
the ring in which the silicon wafer is mounted, but is
quite different for the bonding epoxy. Therefore at very
low temperatures the epoxy may crack, causing exces-
sive noise or loss of contact. The probability of low-
temperature damage increases with detector size. For
cooled operation, detectors fabricated with cryogenic
epoxy may be special ordered from ORTEC.
Another effect of decreasing the operating tempera-
ture of a silicon detector is an increase of the average
energy necessary to create an electron-hole pair, E.
Due to a widening of the bandgap of silicon in the
temperature range from 300 K to 80 K, e increases.
from 3.62 eV to 3.72 eV. A result of this increase is an
apparent shift in energy of a measured spectroscopic
line. For instance, Fig. 8 shows the apparent peak shift
of the 5.477-MeV 241Am alpha particle peak in the 4.2-
K to 320-K temperature range measured with silicon
charged-particle detectors.
SHOCK AND VIBRATION
Many ORTEC surface-barrier detectors have been
subjected to the shock and vibration tests required for
Table 2. Comparison of Radiation Damage In Silicon and Germanium Particle Detectors
Type of Detector
Radiation Damage (particles/cm2)
Electrons
Fast Neutrons
Protons
Alpha
Particles
Fission
Fragments
Surface barrier 1013 10'2 1019 109 109
Diffusion junction 10'3 1012 1019 109 109
Si(Li) 1012 10" 109-109
Ge(Li) 109-109
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Chap. 39
Fig. 39,-17
sing "barged. (a) Show that the
volume. (b) Show that
..atey integrating the Poynting
_s equal to the rate at which the
2),
energy density for all points within
:he Poynting vector point of view,
gh the wires but through the space
we must first find B, which is the
ring the charging process; see Fig.
Nature and Propagation of Light
CHAPTER 40
40-1 Light and the Electromagnetic Spectrum
Light was shown by Maxwell to be a component of the electromagnetic
spectrum of Fig. 40-1. All these waves are electromagnetic in nature and
have the same speed c in free space. They differ in wavelength (and thus
in frequency) only, which means that the sources that give rise to them and
the instruments used to make measurements with them are rather different.*
The electromagnetic spectrum has no definite upper or lower limit. The
labeled regions in Fig. 40-1 represent frequency intervals within which a
common body of experimental technique, such as common sources and com-
mon detectors, exists. All such regions overlap. For example, we can pro-
duce radiation of wavelength 10-3 meter either by microwave techniques
(microwave oscillators) or by infrared techniques (incandescent sources).
I 1P
102 104 106
Frequency, cycles/sec
10? 101? 1012 10 1016
111111111111
Power
?..1.Alcrovravet. tLbie
1011 101? 1022
tril
x-rays
Radio UTIrrviora ?..U1?n;Ta rays --
1.11 11 I I I IIIIIIIILIII1
106 104 102 1 10-2 10-4 10-6 10-6 10-14 10-12 10-14
Wavelength, meters
Fig. 40-1 The electromagnetic spectrum. Note that the wavelength and frequency
scales are logarithmic.
*For a report of electromagnetic waves with wavelengths as long as 1.9 X 107 miles
the student should consult an article by James Heirtsler in the SCiallifIC American for
March 1962.
993
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994 NATURE AND PROPAGATION OF LIGHT Chap. 4(
? ?
? Fig. 40-2 The relative eye sensitivity of an assumed standard observer at different wave-
lengths for normal levels of illumination. The shaded areas represent the (continuously
graded) color sensations for normal vision.
"Light" is defined here as radiation that can affect the eye. Figure 40-2,
which shows the relative eye sensitivity of an assumed standard observer to
radiations of various wavelengths, shows that the center of the visible region
is about 5.55 X 10-7 meter. Light of this wavelength produces the sensa-
tion of yellow-green.*
In optics we often use the micron (abbr. ).4) the millimicron (abbr. mu),
and the Angstrom (abbr. A) as units of wavelength. They are defined from
1 ? = 10 ?6 meter
1 mi= 10' meter
1 A =. 10-w meter.
Thus the center of the visible region can be expressed as 0.555 A, 555 mu, or
&550A.
The limits of the visible spectrum are not well defined because the eye
sensitivity curve approaches the fods asymptotically at both long and short
wavelengths. If the limits are taken, arbitrarily, as the wavelengths at
which the eye sensitivity has dropped to 1 of its m imum value these
limits are about 4300 A and 6900 A less an a factor of two in wave engt
The eye can tetectIrieyond these limits if it is intense enough. In
many experiments in physics one can use photographic plates or light-sensi-
tive electronic detectors in place of the human eye.
? See "Experiments in Color Vision" by Edwin H. Land, Scientific American, May
1959, and especially "Color and Perception: the Work of Edwin Land in the Light of
Current Concepts" by M. H. Wilson and R. W. Brocklebank, Contemporary Physics,
December 1961, for a fascinating discussion of the problems of perception and the distinc-
tion between color as a characteristic of light and color as a perceived property of objects.