TECHNOLOGY TRANSFER

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CIA-RDP91B00046R000100040009-8
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RIPPUB
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K
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21
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December 22, 2016
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January 6, 2010
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9
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Publication Date: 
March 1, 1982
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MEMO
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Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 kD r10 DIREC)R OF CENTRAL INTELLIGENCE Science and Technology Advisory Panel MEMORANDUM FOR: Deputy Director of Central Intelligence SUBJECT: Technology Transfer 1. 1 share many of the concerns you voiced in your AAAS speech of last month. But it is not only the academic community that should be admonished. The enclosed VHSIC Notes is an excellent example of the open publication of technical information by the Defense Department. While the VHSIC contracts are unclassified, I believe the publication in the Notes of the detailed progress in this technology, the status of various programs and planned activities, all presented in detail, provides a penetrating view of where we stand in this critical technology. 2. I also wish to call your attention to a book just published by J. Wiley: VHSIC (Very High Speed Integrated Circuits) Technologies and Tradeoffs by Arpod Barns. I believe it is based on DoD-sponsored research but have not been able to get a copy. The local bookstores report that it has been a best seller over the last three weeks. I note that Washington is not Silicon Valley. STAT Chairman Enclosure: a/s cc: STAT Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 ? VERY HIGH SPEED INTEGRATED CIRCUITS PROGRAM EDITORIAL: VHSIC PROGRESS Larry W. Sumney, OUSDRE VHSIC Program Director The VHSIC Program is progressing well and continues to attract widespread attention as a model for other program areas in the DoD technology base. In particular, the management structure is maturing as a cohesive entity with effective support from the three Ser- vices. Currently, program management is focusing attention on the several aspects of the program discussed below in order to assure continued progress toward the defined goals. Design validation procedures for VHSIC: chips are required at all complexity' levels and are not now being addressed in sufficient depth by the Phase I contractors. Also, the various models and model parameters used in the val- idation procedures do not seem to be adequate in many cases. Considera- tion is being given to the organiza- tion of a workshop to address these issues as well as program support to a standard hardware descriptive language. Onchip testing and fault-tolerant design s also do not appear to be receiving the attention required,. although they are an important con- tractual requirement. Approaches being followed appear to emphasize "stuck-at" faults and non-concurrent testing which may address design and manufacturing errors adequately but not important operational testing requirements. This area will be reviewed carefully as chip designs mature. January 1982 The technology insertion efforts of the Phase I prime contractors vary considerably. In some instances, the additional chip designs resulting from. the expanded number of applications could over-extend the capabilities of the available staff with a resulting degraded performance. In others, a very conservative approach has been adopted, limiting potential applica- tions. DoD project offices have shown less initiative in VHSIC technology. insertion to date but this is expected to change as a result of current in- formation dissemination activities. Overall, this area has received con- siderable attention during the past several months and much progress has been made. TABLE OF CONTENTS Page EDITORIAL: VHSIC PROGRESS....... 1 Larry W. Sumney,.OUSDRE WHAT IS TECHNOLOGY?INSERTION?.... 3 R.L. Remski, AFWAL/AAD VHSIC HIGHLIGHTS FOR FIRST SIX MONTHS ....................... 5 .o HONEYWELL ..................... 5 o HUGHES AIRCRAFT COMPANY....... 7 o IBM ........................... 10 o TEXAS INSTRUMENTS ............. 13 o TRW ........................... 16 o WESTINGHOUSE .................. 18 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 ? VHSIC NOTES. Vol. 2 No.I January Editorial Board Larry W. Sumney VHSIC Program Director: C. G. Thornton Army VHSIC Director E. D. Cohen Navy VHSIC Director W. J. Edwards Air Force VHSIC Director 19,82 Editorial Staff R. L. Remski, Issue Editor. Air Force Wright Aeronautical Labs T. Lindgren Naval Electronics Systems Command D. Elders U.S. Army ERADC'OM: Published by Palisades Institute for Research Services, Inc. Editorial correspondence should be addressed to: The Editors VHSIC NOTES c/o Palisades Institute 201 Varick Street, 11th Fl. New York, NY 10014 ?HStC NOTES - Vol. 2 No. 1 It was realized that the team approach espoused by the VHSIC Program for achieving vertical integration would be difficult to implement. Thus, it is not surprising thRt some VHSIC con- tractor teams are slow in defining compatible roles for the various team members and that teaming arrangements are not yet as effective as they must be to assure successful accomplishment of the program goals. We will con- tinue to address this problem. A major impetus for VHSIC was and is the achievement of chip designs that can operate reliably in military oper- ational environments. The most demanding operational specifications appear to be those related to radia- tion hardness. While the basic fabri- cation technologies appear to be cap- able of achieving the required hard- ness, there is uncertainty as to the effect of the reduced dimensions of VHSIC chips on hardness. More atten- tion will be given to nuclear harden- ing techniques by the Defense Nuclear Agency in a program now being initia- ted in parallel with VHSIC Phase I. Other areas such as susceptibility to EMP and to microwave radiation are being studied. Because major VHSIC chip goals are stated in terms of feature size, lithography is one of the most impor- tant technologies being addressed by the program. In parallel to VHSIC, major corporate investments in ad- vanced lithographic technologies are being made. Optical techniques are being pushed to their limits, E-beam and X-ray machines are-being developed and evaluated, and other alternatives are being investigated as well. Al- though direct-writing E-beam technol- ogy has been. perceived as promising for VHSIC and a large investment has been made in that technology, the other options have been kept open. Now, it appears that choices can and must be made as to lithography invest- ment strategies in the context of re- cent research findings, program needs, Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 VHSIC NOTES - Vol. 2 No. 1 and corporate commitments. This reap- praisal should be completed in early 1982. Over 50 Phase III contracts: have awarded. Phase III is designed to provide a broad base of research sup- port to the Phase I and Phase II efforts. To date, however,: the coup- ling between the research base'and the mainstream efforts has not been as strong as hoped. Thisresults from the timing of the contract awards whereby a number of Phase III efforts were underway while the Phase I efforts were still being defined and by the natural maturation of the pro- gram. For the last several months, the nature of the Phase III effort has been reexamined and steps are being taken to assure a more cohesive - pro- gram and to minimize duplicative or non-contributory projects. By direction of USDRE, a Defense Science Board Task Force is studying various. aspects of the VHSIC Program. This study is chaired by Dr. W.J. Perry and is addressing such issues as progress, funding, technology inser- tion, report controls, and standardi- zation. It should complete its study and make its recommendation early in 1982. The 1981 DSB Summer Study on the tech- nology base identified VHSIC as the technology most likely to have an order-of-magnitude impact -on U.S.. defense posture. This resulted from the pervasive nature of the VHSIC technology and the fact that it has a high. probability of success. While the various issues discussed above are important to the program and each must be addressed, it must be realized that none represents a crisis. Rather, each such problem is typical of the management concerns that must be continually addressed in any large complex program. As the program progresses some of these con- cerns will persist and others will.be resolved and replaced by new con- cerns. For example, it is expected that issues regarding standard versus custom chip design approaches will require much management attention as VHSIC progresses because of the re- sulting major implications on program directions. VHSIC NOTES will be used to apprise you of these changes as they occur. WHAT IS.TECHNOLOGY INSERTION? R.L. Remski, AFWAL/AAD VHSIC Program Office Among the new concepts and technology being developed by the DoD VHSIC pro- gram is a management issue that requires increasing attention. This is the flurry of application-oriented activity known as "technology inser- tion." Rather than just the latest in DoD buzzwords, technology insertion is both a charge and a challenge to the VHSIC technologists and contractors to coordinate with systems users to pro- vide more timely transition from lab demonstration to system socket utili- zation. Over the past several .decades, technology gestation periods have ranged from as few as five or six to as many as 15 years! In the tri-Service VHSIC program, for the first time, a large technology development program has been directed to work with systems users to develop an orderly transition. procedure. This direction comes from the Under Secretary of Defense for Research and Engineering, Dr. Richard DeLauer. The shape of technology insertion activity is seen as active intra-Service mar- keting by the VHSIC program offices in interfacing with various levels of system developers throughout the Service commands. The technology development laboratories have estab- Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 e 4 ? lished a network of VHSIC focal points within potential user commands and are providing detailed technology and overview briefings to command level, system program offices, program man- agers, and engineering support- opera- tions in various application areas. They are also providing for. the widest dissemination of data on chip, module, and system design permitted consistent with the VHSIC distribution limitation under the International Traffic and Arms Regulations (ITARs)},. Active par- ticipation in the detailed technical reviews of the Phase I contracts by consultants from the systems develop- ment operations in the Services is another tool being used to further understanding of the VHSIC program and its technology and goals. DoD is also publishing, on a periodic basis, these VHSIC NOTES and "VHSIC Specification Design Handbooks". for use by systems designers. The Phase I programs are structured for second sourcing of the chip technology, for wide distribution of CAD capabilities, and for direct consideration of system applications in the basic statement of work. The Phase I contractors are. also required to sell chips and other. VHSIC technology to qualified DoD con- tractors through the pilot production lines to be established and running in mid-1984. Therefore, the very organi- zation and makeup of the VHSIC program is permeated with the concept of tech- nology transfer and-insertion, to pro- vide DoD -with itnproved digital processing hardware and software for many applications by the late 1980s. The Services and the six Phase. I con- tractors are presently actively pur- suing opportunities for the applica- tion of VHSIC over and above the brassboards being developed under the current Phase I contracts. Applica- tion of VHSIC technology to. systems now in development and in concept is evolving at the chip, module, and brassboard levels, and in the archi- tecture and design phases as well. Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 VHSIC NOTES - Vol. 2 No. I The concept of technology insertion.is pervasive in that it appears in deci- sions affecting brassboard system par- titioning, modularity, chip and chip design library candidates, an~_iit_the establishment of theCAD _tools?_,which are expected to_b, usable.-by-_a?. wide range of DoD contractors. The use of CAD tools will significantly reduce the design turnaround time for future VHSIC chips. In addition, the estab- lishment of chip pilot production lines will provide additional copies of the chips for application in other systems as they emerge over the next few years. The technology insertion activity in the VHSIC program is headed by Dr. Donald Burlage, OUSDRE, The Pentagon, reporting directly to Mr. Sumney. In the Army, Dr. Pete Hudson and Mr. Al Bramble (AV 995-2526/201-535-2526) of Fort Monmouth are the primary focal points for VHSIC technology inser- tion. The identified technology insertion focal points in the Navy are Mr. Ted Lindgren of NAVELEX (AV 222-6663/202-692-6663), Mr. Charles Caposell of NAVAIR (AV 222-2510/ 202-692-2510) and Mr. Dan Gordon of NAVSEA (AV 222-9760/202-692-9760). Additionally, Mr. E.C. Urban of ASN (AV 225-1444/202-695-1444) is active in Navy insertion planning. In the Air Force, the focal point is Mr. Richard Remski of the AF VHSIC Program Office at Wright-Patterson Air Force Base (AV 785-3503/513-255-3503). Any persons or organizations interest- ed in coupling more" closely to the VHSIC Program are invited to contact the appropriate focal point in their respective Service or Command. Types of services that can be made available 'by the VHSIC program offices are briefings on VHSIC technology covering both chips and brassboards, distribu- tion of reports and data pertinent to specific applications areas, and detailed technical consultation by program office and application engi- neers. Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 + i- I- - 5 VHSIC HIGHLIGHTS FOR FIRST SIX MONTHS Contract No.: F33615-81-C-1527 Program Manager: Dallas D. Burns COTR: Mr. Robert Werner Honeywell's Phase la VHSIC Program is based on the further development of a proven dielectrically 'isolated digital. bipolar 1.25-um feature size. process that is compatible with:.a large family of circuit technologies, including I2L, ISL, DTL, TTL, CML, and CS2L. This process flexibility com- bined with a semi-custom design approach based on the development of complex functional building blocks called "macrocells" and supported by a complete and integrated CAD system is Honeywell's solution to DoD's require- ment for affordable fast turnaround ICs that will reliably provide very high performance in severe military environments. Honeywell's brassboard is the electro-optical signal proces- sor (EOSP). Two semi-custom chips are required: a parallel programmable pipeline (PPP) chip and a controller chip. In the EOSP, two controller chips control 32 PPP chips to meet the high-throughput requirements of typi- cal scene segmentation and target recognition 'algorithms -- commonly several billion operations per sec- ond. Both chips predominantly utilize ISL technology for high-density low- power logic (64,000 gates/cm2, 30 uW/gate, 2.0-nsec delay) and CML tech- nology for. very high-speed logic (26,000 gates/cm2, 30 uW/gate, 0.6 nsec delay). Both chips are 360 mils on a side with equivalent gate counts in excess of 20,000. Because of the flexibility of the manufacturing pro- cess, random logic, RAMs, and ROMs can be combined on a single chip for maxi- mum on-chip data flow efficiency. The PPP and controller chips can be used in a variety of system architectures for a wide range of signal processing applications including acoustic, millimeter-wave, microwave, and opti- cal applications. To achieve the VHSIC reliability requirement (0.006% per 1000 hours maximum failure rate), the chips have. been designed with extensive self-test capabilities and the EOSP has spare PPP chips that are brought into play by self-test provi- sions at the subsystem level. In addition, on-chip redundancy is used to ensure the attainment of yield ob- jectives, thus reducing manufacturing risk. Chip' packagig,-_being_.developed jointly. with the 3M Corporation,. will be based on state-of-the-art ceramic chip Carrie=_ technology..with_.proven high-pincount_ comp_atibil.ity. In VHSIC Phase lb, Honeywell is demon- strating the feasibility of a 0-.50-um feature size process (ADB-IV).based on a further extension of the 1.25-um process (ADB-III) developed in Phase la. The key features of both process- es are summarized in Table 1. TABLE I. KEY PROCESS FEATURE FOR ADB-III AND AD-IV. ADB-III 1.25-um minimum features 10:1 direct wafer stepper All dry etched All ion implanted Oxide isolated Three-layer CuAI metal 0.50-um minimun features E-beam direct write All dry etched All ion implanted Groove isolated Four-layer interconnect Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 ? Density and performance goals for 0.50-um ISL gates are 150,000 gates/cm2 at 10 uW/gate while retaining less than 2.,0-nsec delay. For CML logic, these values will be 60,000 gates/cm2 at 25 uW/gate with less than 0.8-nsec delay.. Thus, the ADB-IV process being developed, in Phase lb will easily surpass the VHSIC functional throughput rate requirement of 1013 gate-Hz/cm2.. Honeywell feels that an important strength of both the ADB-III and ADB-IV, processes is high inherent tolerance, to radia- tion environments. Significant radia- tion testing activities have been included as a part of the Phase la and lb programs. Status of Phase 1 as of 1 November 1981 EOSP system design is- proceeding as planned with initial concentration on architectural specifications, sub- system design, and chip and macrocell specifications. System requirements have been generated for segmentation, band-width compression, FFT, arithme- tic operations, and histogram genera- tion. A register transfer level des- cription of a Sobel edge operator has been generated and documented as an example of a PPP implementation of a typical image processing algorithm. Detailed specifications for the PPP and controller chip were completed and submitted to the DoD VHSIC Program Office. Chip and system test specifi- cations were generated along with design techniques that are consistent with non-functional test (NFT) method- ology. Both procedural and nonproce- dural levels of simulation using ISPS and, DL languages are in progress. Functions verified to date include I/O on the PPP chip, address generation on the controller chip, floating point addition, correlation tracker func- tions, and a complete processing ele- ment of the PPP chip. Specifications for all the macrocells used in the two chips have been written, and function- al DLS simulations have been completed for most of them. Circuit and chip 0 VHSIC NOTES - Vol. 2 No. 1 design accomplishments include the establishment of firm design rules, basic gate designs and layouts, chip floor plans, and macrocell simulation and layout. The design rules were based on processing results, with test devices and include maximum current limits for electromigration resistance as well as current density limits. .These design rules were applied to the basic gate designs to ensure compati- bility with our simulation and testa- bility methodology. The controller chip contains approxi- mately 13,000 ISL logic gates plus on-chip ISL ROM and on-chip CML RAM. The PPP chip contains a number of par- allel processing elements and associa- ted memory consisting of 17.,400 ISL logic gates and CML RAM. The PPP and controller chips utilize total of 43 different macrocells. CALMA layouts have _b-e.a_n_~ompleted._fa~-LO_o~themos.t compleg_(barrel shifter, ALU, sequen- cer, etc.) macrocells. ADB-III process development is pro- ceeding as planned with work concen- trated on incorporating new process technology and optimizing process par- ameters to maximize yield. Baseline processes for both a reduced pressure epitaxial reactor and a high-pressure oxide growth (HIPOX) reactor have been established. The Phase la optical photolithography capability has been established based on a 10:1 direct wafer stepper. Baseline processes for plasma etching of silicon oxide and silicon nitride. have been established with excellent "uniformity. A yield model test chip__to provide data _on_ the density of yield_reducing .faults has been completed throug_h_d_es_ig_n and lay- out. Baseline processes for both a metal deposition down-sputter system and a plasma-assisted Si02 dielec- tric for threelayer metal have been established. Test chips with 1.25-um geometry have been processe.d.and test- ed using automatic,. measurements tech- niques for evaluation of .device.. para- meters. Good results were obtained Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 . VHS IC NOTES .- Vol. 2 0 1 -0 with typical transistor current: gains of 50-100, and collector-emitter (Vceo) breakdown voltages greater than 6 V. ISL gate delays. were found .to be very uniform. with average delays of 0.72 nsec. The ADB-IV (0.5 um) process develop- ment is proceeding as planned::: with completion of- initial submicrometer .test chip runs and evaluation of groove refill isolation processes. This work produced functional..transis tors with 0.75-um emitters with typi- cal current gains of 100-150. Devel- opment of a technology utilizing groove refill isolation is in pro- gress. This will result in a planar- ized surface with reduced isolation area and lower. temperature/ time pro- cesses. Samples of groove refill using several process variations were evaluated. LPCVD oxide appears to yield the best results with good planarization. Pre- liminary evaluation of, a two-layer electron resist structure to obtain submicrometer metal interconnect showed very promising results with interconnect lines down to 0.6-um pitch demonstrated. The packaging development has been planned in two steps. In Phase _la, packaging will be developed for chips with up to ]80_.pins,__and_ beam tape bonding will be used for high-yield high-reliabdlity mass-bonding chip-to- package interconnect. In Phase _lb, the pin count will be extended to 240 Pin , s L. and an .area 'tape-bonding concept will be used. In summary, Honeywell is off to a good start on the execution of its Phase 1 VHSIC contract. All program activi- ties are proceeding as planned and virtually all results to date have reinforced our confidence in our abil- ity to meet or exceed the original objectives of the program. Contract yo.: DAAK20-81-C-0333 Program Manager: Dr. Art Chester COTR: Dr. Pete Hudson Introduction The following sections provide brief discussions of the major aspects of the Hughes VHSIC program. These include: (1) the CMOS/SOS chip tech- nology, which provides a unique com- bination of high speed, low power, and radiation hardness; (2) the spread- spec tr_u_m -communication-system. brass- board deonstration_..ba.sed__on__three fj_ .e.x..ble _m VHSIC funct.io.n_ chips; (3) the DAST..,activi y, especially. the advanced CAD system,. which.. optimizes the com- bination of _human _...creativitywith machine support; and (4) the submicro- meter process development, which builds on and supports the 1.25-um chip technology. Chip Technology and Fabrication The Hughes Phase I approach is based on CMOS/SOS technology, which provides high speed, low power, and radiation hardness. The 1.25-um version of this process is a direct development from the existing CMOS/SOS process at Hughes that is providing LSI chips for production systems. The evolutionary sequence is summarized in Table 2, which shows the basic design rules for each process. Both the SOS II and SOS III (VHSIC) processes use tantalum silicide gates and two levels of aluminum, so they are identical except for scale. The VHSIC pilot line is being estab- lished in a new ultra-clean facility with 12000 square feet of controlled area, computer controlled diffusion furnaces, computer controlled photo- lithographic processing tracks and projection aligners, computer control- led wafer cleaners, central computer manufacturing control, and a full com- plement of plasma etchers and thin- Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 TABLE 2. C`MOS/SOS TECHNOLOGIES. DESIGN FEATURE SOS I SOS II :SOS III (um) (um) (um) Poly.Si Gate 3.5 .2.5 1.25 PolySi Pitch 10.0 6.5 3.0 Metal Pitch 12.0 14 5.0 Metal/Poly 0/Lap 5.0 3.0 0.8 Contact 4 x 4 3 x 4 1.6x 2 film equipment. Each building block of the process is based on computer modeling and supervised by the computer-aided management system. The 1.25-um process and its design rules have been established in cooper- ation with two second sources, RCA and Rockwell. The second source sub- contracts provide for concurrent pro- cess development, with the second sources processing both test chips and VHSIC function chips. The first pilot line test chip is in fabrication at Hughes, RCA and Rockwell. The first lot processed by Hughes using the 10:1 direct step on wafer aligner was com- pleted in November 1981, with good initial results. A baseline oxide etch process is established, and work on etch selectivity is progressing. A silicide reactive ion etcher(RIE) is installed and operational. Metal etch to VHSIC dimensions has been demon- strated, and silicide, aluminum, oxide etch, and the double-layer metal have been shown to' be compatible. Process development is moving ahead strongly, and a SOS material characterization and improvement effort has been defin- ed and initiated. Communication Chip Set and Brassboard Demonstration The 1.25-um CMOS/SOS chip technology is being used to implement three reconfigurable. function chips that provide .__ key__._s.ignal-processing func- tions_ common to.a. very broad range of secure, _ anti-jam communication sys - va. i1- ,+vLca - vol. L No. I terns. The high performance of these chips will enable them to provide cost effective communication systems into the 1990s. Their flexibility, reli- ability, and low power will enable them to be retrofitted into existing and developing systems with signifi- cant cost savings and improvements in reliability. Detailed -technology inse rt iota-.plans._.haye._ b.een.....deve loped for the position location and report- ing system (PLRS), where substantial cost and reliability improvements can be achieved. in near-term production programs. In the Phase I brassboard demonstration, the three chips will provide performance enhancement of the PLRS/JTIDS hybrid for the future Army battlefield information distribution system.. These three chips have. been defined, and the first chip is into layout. The three chips are a 256-stage dig- ital _correlator chip, an _.algebraic ernconerLdecoderi chip, and a spread spectrum sub ystem_chip. These chips will operate at 25-MHz off-chip clock rates and 100-MHz on-chip clock rates. Their complexity level approaches 20,000 gates, and their full power at maximum clock rate is less than 0.7 W. The chips are designed for nominal operation at 5 V, but they are compatible with 3-V oper- ation as well. The correlator chip has completed logic design review and is into layout. The encoder/decoder chip is almost ready for logic design review, and the spread spectrum sub- system chip is at the detailed block diagram level, with _several parts of the logic defined. The PLRS technology insertion plan covers the digital signal and message processor subsystem module of the basic user unit, a man-aackable...-,ter- minal. The primary impact of the VHSIC technology insertion will be to halve the size, weight, and cost of the signal and message processing module, and to double the reliability of this module, The total parts count Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 VHSIC NOTES - Vol. 2I?. 1 for the two-card module will be reduced from 280 to about 100. A pre- liminary estimate of the reliability improvement indicates that there will be an 18% increase in the: predicted mean time between failures NTBF) of the basic user unit as a result. of changing the single module.. The cor- responding cost reduction is. 12% of the basic user unit cost, resulting in very . substantial production cost savings. DAST and CAD System Design technology,, software tools, and chip test support are provided by the DAST segment of the Hughes VHSIC. pro- gram. The CAD tools being developed provide hierarchic al___designs. The designer works at the symbolic level, with structured cells. Design guide- lines emphasize testabiliy and pro- visions for fault tolerance, while automatic __test ernexation provides esentially complete test coverage. Full utilization of the performance potential of the chip technology is obtained by providing concurrent hier- archical simulation of performance`,, including the effects of interconnec- tion parasitics. Design_...v"erification is provided by simulation at several levels, and by-cross check of layout interconnections with the logical des- cription of the chip. The set of CAD tools interacts through a common data base, using' a data-base management system. The_set of CAD tools is being developed for. the VAX-11L780 -computer., while emphasizing portability .to_ other 32-bit virtual memory machines. The development schedule for the VHSIC CAD system includes an operational LSI level of design _ capability at six months. This six-month milestone was met on schedule, providing separate CAD tools, working on a common com- puter. This near-term capability will be used to design the macrocells for the VHSIC function chips. The next . ? step is an interim VHSIC CAD capabil- ity.. Work on this system. has been going on in parallel with the basic system. The intex.im_c.apability- will be... available- in.. the.. second quarter of 1 and it will be able to handle the VHSIC complexity of the three function chips. By the first quarter of 1983, these tools will be signifi- cantly enhanced and integrated to form a complete system operating under a common data base. Finally, by the end of the program, the total hierarchical capability will be incorporated into the tools and documentation will be completed, thus making the CAD system available for transfer to the VHSIC community. The VHSIC CAD tool set. is 95% defined. In addition to meeting the first. major milestone of an opera- tional LSI capability at the new VHSIC design center, a hardware and artwork description language recommendations report was prepared and delivered on schedule. Good progress is being made toward the next two major milestones; for example, a detailed information model for the common data base is 30% complete. Submicrometer Technology The Hughes approach in the Phase lb development of a 0.5-um CMOS/SOS pro- cess is based on continuing evolution from the 1.25-um process. This evolu- tion is summarized in Table 3. A key difference is the necessity to use a refractory metal for the intermediate interconnect layer in the 0.5-um' pro- cess. This process will use e-beam direct write to fabricate the mask levels with the smallest resolution and tightest alignments, and the refractory metal interconnect permits annealing of e-beam induced neutral traps. The process will work with a thinned epi-layer to optimize leakage, threshold voltage stability,' and carrier mobility. Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 0 TABLE 3. EVOLUTION OF 1.25-0.5 um. SOS III SOS IV (1.25 um) (0.5 um) Technology CMOS/SOS CMOS/SOS'(CMOS) Lithography DSW E-beam (DSW) Metalization Two-level Two-level (Al + Al) (Refract + Al) Epi thickness 0.5 um 0.3 um Channel implants Double Double Gate metalization Silicide Silicide Etching Dry Dry The submicrometer development strategy is based on using optical lithography to determine non-lithographic issues, performing extensive process and device modeling, using existing research a-beam equipment, and utili- zing results from the Phase la 1.25-um process development. The first milestone, a report review- ing all equipment' necessary to make the submicrometer devices, was com- pleted and delivered on schedule. The simulation efforts started on sched- ule. Several test lots have been pro- cessed to evaluate different steps in the process and to confirm theoretical scaling laws. Good progress has been in p+ implants, n+ implants, double resist processes, and anisotropic etching. Simulation results agree with observed perfor- mance, predicting 50-psec ' ring oscillator speed at 3-5 V for the present device design. Exposure and' development studies are providing both positive and negative resists to sup- port the a-beam lithography. Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 0 VHS IC NOTES - Vol. 2 No. 1 Program Manager: Dr. H. Cloud Contract No.: N00039-81-C-0416 COTR: Eliot Cohen This. report presents progress by IBM on, the VHSIC Phase I Contract covering the period from-1 May 1981 through 1 November 1981. IBM's Federal System Division at Manassas, VA, has the prime responsibility for the VHSIC program with support from IBM's Gen- eral Technology Division, Burlington, VT and Research Division, Yorktown, NY. Technology and Processing The key technology, requirements for the VHSIC 1.25-um program are to develop chips which have the following characteristics: densities of 10-30K gates per chip; operation with clock frquencies on the. chip of at least 25 MHz; overall functional throughput rates (FTR) of at least 5 x 1011 gate-Hz/cm2; and the capability to operate in military environments. The key program objectives for 1.25-um technology are to develop a process, practice this process for newly devel- oped macros and chips, and integrate and test these chips in a brassboard within the three-year schedule. IBM has selected NMOS as the base technol- ogy for 1.25-um VHSIC because it is IBM's lowest risk technology in achieving the above objectives within the three-year schedule. The charac- teristics expected in the technology area will meet.. or exceed all VHSIC requirements (see Table 4). In the packaging area, IB14 is developing a single-chip package for the brass- board. For the VHSIC submicrometer program, Phase lb, IBM is examining extensions of MOS technology at IBM's Research Division. IBM is developing the 1.25-um technol- ogy capability based on in-house development work in NMOS technology. IBM's plan for 1.25-um development is to extend the necessary process steps Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 VHSIC NOTES - vol. 2 No .111 TABLE 4. PHASE la VIIS IC CHARACTERISTICS Chip Technology Performance -- 25 MHz No. of Gates -- 30K/chip Power -- 3 W/Chip Size--8x8mm FTR = 12 x 1011 gate-Hz/cm2, (approx.) Packaging Single -- chip carrier.. I/O -- 240 (190 signal; 50pwr/gnd) Interconnect -- decal Size (substrate) -- 1.5 x 2 in. Package (2nd lev) -- avionic Environment Military to 1.25 um from established process capability, and add the necessary rad- iation hardening enhancements to sat- isfy VHSIC requirements. IBM is cur- rently characterizing the process and is making test sites for purposes of evaluation. Process work will con- tinue throughout 1982 with process transfer to the VHSIC pilot line. to be completed in the last quarter of 1982. Radiation-hardening work is being emphasized in the IBM approach. Plans are in 'place, to evaluate harden- ing enhancements through 1982 with final techniques selected and inte- grated into the VHSIC pilot-line pro- cess in the 1983 time frame. Architect'ire CAD and Support Software IBM's major objective in the chip architecture area is to develop a cost-effective design capability for VHSIC which can be used for the devel- opment of unique chip configurations required in DoD weapon systems. The IBM approach complements the chip fam- ily approach in that DoD weapon sys- tems will continue to require the development of new chips to extend the capability of already developed chips so that optimum system implementations . ? can be achieved in VHSIC and VHSIC- like technology. This design capabil- ity is characterized by a chip archi- tecture called "master image" which utilizes a comprehensive set of primi- tive and custom macro functions stored in a computer library. The designer selects from the macro library those functions that he needs to personalize a chip design. Table 5 summarizes the initial macro list under development. Primitive macros are more simple logic structures consisting of NORs, exclu- sive ORs, drivers, receivers, latches, etc. Custom macros generally address more complex functions than primitives such as the 16 x 16 multiplier, multi- input adder/accumulator, interface handler, an on-chip monitor for test- ability, and an extendable register file for buffer storage. Essential to the success of this approach is a set of CAD tools which facilitates the design process for macros and chips. Chips of the. VHSIC complexity must be developed utilizing such a CAD system. TbLis CAD system will rovide acts fnr simu- lation, deg i=, ~and c eski_ng,..._and documen tat ion _thr4uQhout_the_.__overall rocess. Products of the CAD effort will be a basic design capability which will permit custom chip design for diverse system applications. TABLE 5. Phase Macro Library (CORE SET) Primitive Macros Custom Macros NOR 16 x 16 Multiplier Multiplexer Three-Way Adder Exclusive OR Register File On-Chip Receiver On-Chip Monitor On-Chip Driver Interface Clock Driver Shift-Register-Latch Carry-Look-Ahead Adder Transceiver Parity Generator Arithmetic Logic Unit Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Under the VHSIC program, IBM is addressing the support software tools for designing systems where the design assets will consist of an inventory of VHSIC and. VHSIC-like components ex- pressed in VHSIC hardware' descriptive language (VHDL) and macros or subcom- ponents of VHSIC chips, also : expressed in VHDL. An interactive: system design capability is needed so that:thes:sys- tem designer may have access to the design assets and apply various tools for analysis, simulation, checking, and documentation relative to optimi- zing his system design. IBM is defin- ing the tool set and approach to sup- port this interactive process. As a product of the process, optimized sys- tem designs composed of VHSIC technol- ogy will emerge. Chip Development Under the VHSIC program, IBM is devel- oping the complex multiply accumulate chip (CMAC) as the initial chip utili- zing 1.25-um technology and design capability. The CMAC is a parameter- selectable 'signal processor which can perform 100 million multiply and ac- cumulate operations per second. It is intended to be used on the front end of signal-processing systems where processing demands require this type of capability: The CMAC chip executes high-performance signal processing algorithms required in the front-end data stream of many sensor processing systems. By using the IBM NMOS VHSIC technology, -a very high multiply rate is achieved with significantly fewer watts and in a much smaller volume than has been achieved with current technologies. This high performance is accomplished with a very simple data flow that uses a number of multi- pliers connected in a linear array. The simple-structure concept extends to the control of the chip where a parameter selectable rather than pro- grammable approach is used. The algorithms executed are highly repeti- tive, simplifying the control task. Flexibility is obtained by loading a S ? Vl{SIC NOTES - Vol. 2 No. I parameter, during initialization, from an external controller to configure the data flow for the desired algor- ithm. The CMAC chip has two basic classes of operation: (1) complex multiplication of a number of four parallel channels by a set of pre- loaded weights and summation of the products and (2)- any of a number of delay, multiplication, and summation operations on a single channel by using cascaded sections of identical hardware. The CMAC operates with par- allel stages of multiplication and accumulation, each stage operating with a basic clock frequency of 25 MHz. Current technology sizings indicate a chip density in excess of 30K gates for the chip. Testability IBM is placing significant emphasis on testability within the chip to provide built-in logic for manufacturing test and sufficient on-chip logic capabil- ities for supporting system level availability and fault tolerance. The basic approach requires, as part of the design process, added logic on the chip to implement two major xbi1- i~ _feature.s_ level s.ensitiv_scan design (LSSD) amd__th.e-on-chip.. monitor (0CM) macro. LSSD is a design disci- pline, whereby' the function of the chip can be subdivided into combina- torial elements, and each element tested by inserting test patterns with the measured response compared against predetermined results. . For a rela- tively small overhead, fault detection or coverage of greater than 96% of the gates on the chip can be expected. Furthermore, the LSSD discipline allows the test patterns to be gener- ated automatically by the computer. The 0CM is a testability macro whose function is to control and manage the testability of the chip. It also serves as the standard chip interface for testability to the overall system testability architecture which is defined as the availability management system (AMS). AMS consists of a Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 _. Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 TABLE 6. EXPECTED BRASSBOARD SYSTEM CHARACTERISTICS. o FUNCTION - High-performance acoustic preprocessor Increased detection Potential for increased system capability o BRASSBOARD CONFIGURATION - Expand capability AN[UYS-1. Upgrade to input signal conditioner o SYSTEM APPLICATION - P3, S3, AN/BQQ-5, LAMPS - Preprocessing for AN/UYS-1 Navy standard processor 0 nology due to space, weight, and cost considerations. VHSIC technology is an ideal match for addressing the acoustic problem in that the signal- processing capabilities needed for keeping pace with the threat can be realized. The brassboard configura- tion specifically addresses an upgrade to 'the input signal conditioner (ISC) of the AN/UYS-L. Expanded digital processing will be added to the ISC, permitting more functions to be addressed by the overall configuration without the need for redesigning the hardware and software of the AN/UYS-1. This "front-end" improve- ment will provide for increased pro- cessing capability and will facilitate technology insertion for those plat- forms currently employing the AN/UYS-l. software-based executive or controller which ties into all of the OCMs in the system. Availability management at the system level is the primary role of AMS and will provide -error detec- tion, error logging, fault isolation, and system recovery. These attributes are essential to achieving fault- tolerant systems of the future. The architecture attributes of testability will be built, into the chips and demonstrated in the brassboard. Brassboard Development The brassboard under VHSIC Phase la development is a high-performance acoustic preprocessor (see Table. 6). The capability being furnished will provide for increased target detection in anti-submarine warfare (ASW) sys- tems. Requirements in ASW have been evolving and growing for many years due to more sophisticated and quieter threats. Significant advancements have been made in signal processing which have lead to very demanding sys- tem requirements for the Navy ASW platforms. These requirements are by no means satisfied with today's tech- Contract No.: DAAK20-81-C-0382 Program Manager: Dr. Dean Toombs COTR: Dr. Pete Hudson The Texas Instruments VHSIC-l Program is based on a small set of multiRu=- pose programmable system componen Es. implemented in commercially aligned semiconductor technologies; a multi- mode fire and forget (M2F2) missile subsystem demonstration brass- board and a comprehensive -set of soft- ware/hardware design tools to support subsystem design with the basic chip set. Eight chips have been defined and are currently under development. A high- performance NMOS memory and seven logic-oriented components that will be implemented in Schottky transistor logic (STL). NMOS was selected for "the memory because of the high den- sity, low power, and low cost intrin- sic to the technology. ' STL was selected for the logic components because of inherent reliability and tolerance for the military environment and exceptional speed-power product characteristics. Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 c l4 Many of the candidate VHSIC. brassboard systems shared several basic . IC related'requirements such as: o Memory: High performance, low cost. o Data Processing: Data-dependent arithmetic, logic, and control operations on unstruc- tured data streams. o Array Processing: Repetitive data-independent! opera- tions on fixed-size blocks of data. o Limited Special-Purpose Processing and Interface: Some application specific require ments must be supported. The Texas Instruments chip set. and related design support tools have been architected and specified to accommo- date these needs. A brief functional description of the chips as they apply to the requirements follows. The design support tools will be discussed later with the design utility system. Memory needs are served with a single .general-purpose component: o Static Random Access Memory (SRAM): 25 usec read/write access, on-chip parity generate/check, and 1K block write protection. The 1750A instruction set architecture (ISA) was selected for data-processing requirements and three logic compon- ents defined as: o 1750A Data Processor Unit (DPU): A full 1750A ISA with 6-MIP 16-bit fixed-point throughput, multipro- cessor support, and memory error detection/correction. o Device Interface Unit (DIU): Implements direct memory access (DMA) operations, provides interval timing, and performs instruction I/O. ?VHSIC NOTES - Vol. 2 No. 1 General Buffer Unit (CBU): Supports multiple level bus opera- tion, provides first-in/first-out (FIFO) buffered transfers, and per- forms parallel I/O. These three chips, together with the static RAM, can be configured as an application specific or a generic data processing node. Four logic chips have been defined to meet the array processing require- ments. They consist of a highly con- current 16-bit fixed-point arithmetic resource and three support chips: o Vector Arithmetic/Logic Unit (VALU): 75-MOP 16-bit fixed-point through- put pipelined arithmetic capability. o Vector Address Generator (VAG): Two-dimensional X-Y array address- ing, FET bit reverse, cycle steal I/O support, and data memory chip select decode. o Array Controller/Sequencer (ACS): General purpose microcontroller with nested do-loop control, a sub- routine stack, and an register file. o Multipath Switch (MPS): Connects memories with ports, sup- ports cycle ' steal I/0, single memory/multiprocessor broadcast, and static and dynamic state control. As with the data processor, these your chips and the SRAM can be configured to. match specific or generic array processing requirements. The SRAM and VALU designs are to be executed as dedicated optimized IC ttesigns. The 1750A DPU, DIU, ACS, and VAG are ROM programmable components that will each be unique programma- tions of a 1OK-gate/52-kbit ROM base array. The GBU and the MPS will be implemented as programmations of a 4K-gate base array. This 4K-gate. base array will also be available with sup- Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 V}[SIC NOTES - Vol. 20 1 porting software for design and imple- mentation of special-purpose. process- ing and interface requirements. The entire chip set is TTL I/O compatible and will be packaged in; Joint 'Electronics Device Engineering Council (JEDEC) standard leadless chip carriers. Chip and system level testability have .been comprehended in the component functional specifications. `The 'pro- grammable system ..components: (PSCs) will incorporate on-chip self-test and a standard four-pin maintenance port. This will avoid the usual test band- width limitations, allow at-speed chip testing, and solve controllability/. observability depth problems. Compat- ible processor and systems level test- ing have been defined to support fault tolerance operation, "push . to test" go/no-go verification, and breakpoint/ single-step operation for system checkout. Preliminary chip specifications have been prepared for all components, and detailed final specifications are in preparation. Actual chip design is under way for both the SRAM and VALU.. The M2F2 VHSIC demonstration brassboard will be based on a passive rf, anti-radiation homing (ARH) sen- sor, and an imaging infrared (I2R) sensor. The data and array processing modules defined and developed for the brassboard will be integrated with two existing sensors to provide the signal and control processing required for. the operational function of an M2F2 . missile subsystem. The func- tions to be demonstrated include con- trol of the ARH and 12R sensor, multithreat processing of the ARH sen- sor data, precision queing of the 12R sensor to the radiating target selected, autonomous acquisition of the potential target from the 12R field of view and the concurrent track of the target by both sensors. . The software applications for the brass- board data processor module will be ? written in a higher order language (Pascal) with calling provisions to functions programmed in 'the array processor. The data-processing node defined for the M2F2 missile subsystem brass- board is a 4-MIP 22-component config- uration with 64K. words of 16-bit mem- ory. The array processor node is a 22-chip 75-MOP throughput processsor with 40K words of 16-bit memory. Missile compatible module packaging concepts have been defined that accom- modate both a data and array process- ing node on a single 9 x 5 inch cer- amic substrate. Power dissipation on the substrate will be well inside I. W/in.2. Specification of the brassboard con- figuration and system performance requirements based on operational scenarios are complete. Detailed design of the system testbed and demonstration software is under way. The design utility system (DUS) is a body of user executed software and hardware that should constitute a suf- ficient tool set for a subsystem designer to define a set of hardware resources and specify the PSC program- mations required for a given subsystem design. The concept is analogous to the support which is currently provid- ed for microprocessor user community. The DUS consists of four basic tool sets: o A hardware description language and integrated simulator that is use to specify, design, and evaluate system level configurations, array and data processor nodes, and gate array programmations. o Array processor support software that is used to specify, emulate, and design vector processor nodes. It consists of a configurable reg- ister transfer language compiler, linkage editor, and instruction level simulator. Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 ? o Data processor support software that is used to specify, evaluate, and design 1750A-based processing nodes. It consists of an HOL (Pascal) compiler, 1750A assembler, link editor, and instruction level simulator. o A software maintenance.' panel that supports systems hardware software test and diagnosis. An integrated DUS will be delivered under the VHSIC 1 contract.'. It is intended to be software transport- able. Detailed design is underway in each of the four areas mentioned above. Program Manager: Dr. B. Whalen Contract No.: N00039-81-C-0414 Navy COTR: Eliot D. Cohen During the first six months, TRW assigned definitized work packages, schedules, and budgets to all respon- sible organizations including our subcontractor/teammates, Motorola and Sperry Univac. Additional tasks for' testability and fault-tolerant design were added to the Sperry. Univac.state- ment of work. Detailed schedules and budgets were computerized on the CSSR system to provide means for early identification of potential cost and/or schedule problems. Our process. development activities, which include Phase la and Phase lb tasks in both 3D bipolar and CMOS, have continued as they were proposed. TRW began Phase 1 with an existing baseline 1-um process. Our Phase 1 efforts are directed toward enhancing this process with features which increase device density, increase operating speed, improve yield, and/or improve design flexibility. These enhancements include the incorporation of arsenic resistors to permit the independent optimization of collectors and resistors and thereby avoid a penalty in scaling, the use of - VHSLC NOTES - Vol.2 No.1 double-level metallization to improve both density and speed, dry etching of metal and oxide to permit. reduced design rules with a resultant increase in functional throughput, incorpora- tion of Schottky diodes in output drivers, and the use of low-tempera- ture annealing techniques to allow ion implant activation and damage removal with minimum junction movement. Highlights of TRW's achievements included delivery of 100 flash A/D converter chips to demonstrate the stability of our baseline 1-um process. Similarly, at the start' of Phase 1, Motorola was well under way with development of a 1.25-um CMOS process having already designed a Phase 0 chip. Motorola's goal is to achieve a basic operating 1.25-um process by February 1982 and then use that pro- cess to develop enhancements such as the addition of a refractory metal shunt for the polysilicon gate material, alternative metallization to further reduce metal pitch, buried contact and polyresistor technology, and the addition of a third layer interconnect capability. Their activ- ities during the first six months of Phase I consisted of producing test wafers, evaluating them, and incorpor- ating processing changes to improve the performance of later runs. Equip- ment and software tool enhancements were also accomplished. Achievements included production of test device chips with reasonable yield. Development of submicrometer process- ing capability is' a challenging task for both 3D bipolar ahd CMOS technolo- gies. During the first six months we concentrated on running experiments and gathering data that cannot be extrapolated from larger feature size work. This activity included the design of test chips. Achievements were the establishment of an opera- tional e-beam machine at both TRW and Motorola, TRW's definition of a sub- micrometer process, and Motorola's production of working p- and n-channel devices with 0.5-um feature size. Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 VHSIC NOTES. - Vol. 2 ? 1 In the DAST effort, we examined signal processors that require both high flexibility and substantial parallel- ism to achieve high volume but rela- tively repetitive number manipula- tions. Data-processing architectures tend to be more serial in nature,:: less synchronous, and more control inten- sive than signal-processingarchitec- tures. These differences lead to dif- Eerent requirements not only. for VHSIC chips but, different interconnect con- cepts as well. The V Bus interconnect developed by Sperry Univac allows any single pair of users to initiate, carry out, and terminate a communica- tion with very little overhead and thereby fits the data-processing requirement. Signal proc essors, 'how- ever, require that many short point- to-point communications occur simul- taneously and these can be under pro- gram control. The DAST studies reaffirmed our Phase 0 selection of cross-bar-type switches for signal- processing applications. Computer-aided design (CAD) and simu- lation activities being undertaken by Sperry Univac were started. The CAD system being developed makes use of a number- of _existing__and..evolying soft- ware programs. These programs include the logic simulators, circuit simula- tors, layout_~aids,.. testability_ aids, routing algorithms, and verification tools. A key task of the CAD and simulation efforts will be to unify these separate software tools and make them available to a designer from a common data base and using a single hierarchical system language whether he operates at the system, board, chip, macrocell or diverse level, or a combination of several levels simul- taneously. One of the highlights was the interfacing of the ADLIB/SABLE mixed level simulator to the data base. Testability received considerable emphasis during the first six months. Our testability approach is to specify a generalized test concept around a maintenance processor, a maintenance r network to connect chips and boards to the maintenance processor, and a main- tenance node on each chip whose pur- pose is only to handle communication protocol between the maintenance processor and the chip. Within this framework we are conducting a top-down look at testability to identify system requirements for testability and fault tolerance. At this time, we are specifying the testability features of the individual chips. Circuitry on each chip will perform the testability functions and convey results to the maintenance node. Software. in the maintenance processor will process individual chip results. Achievements include the design of a main- tenance node for use on each VHSIC chip which meets the testability requirement.' The EW brassboard development requires an intensive' first-year effort during which system requirements must be established; chip specifications pro- duced with all functional, testabil- ity, and interfacing requirements defined; and a demonstration plan baselined. In parallel with chip design and fabrication, all packaging design and fabrication for chips, boards, and the brassboard must be completed. Brassboard software must be developed in parallel with the chips. All software development will use hardware emulators because no hardware will be available until final integration and test. During the first six months we completed our system requirements defintion and are nearing completion of 'our baseline processor design. A major effort to design and specify our eight custom VHSIC chips was initiated. We com- pleted specifications. on the window .addressable memory (WAM) chip and are nearing completion on the matrix switch, register arithmetic logic unit (RALU), and four-port memory. In the quality assurance area, quality control patterns which will be used to monitor chip production line perfor- mance were defined. Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 18 ? ? VHSIC NOTES - Vol.2 No.1 WESTINGHOUSE Contract No.: F33615-81-C-1532 Program Manager: Dr. John Walker COTR: Mr. Robert Werner The Westinghouse VHSIC Program is a team effort focused on the development of a multiprocessing computer capable of handling the signal-processing functions of the advanced tactical fighter environment. Included in the team are National ..Semiconductor, Control Data Corporation, Harris, and Carnegie Mellon Institute. The team has adopted a commonality concept which includes a chip set based on 1.25-um CMOS IC technology, a set of modular signal processors, architec- ture capable of adaptation to a large variety of environments, and a high- order language programming approach. A pilot line has been established for the fabrication of VHSIC chips. Pro- cess experiments and simulations have been used to define the CMOS baseline process which will meet speed, den- sity, and, reliability requirements. A process development test vehicle has been designed and is in fabrication to verify lithography, design rules, per- formance, and reliability of the base- line process. Parallel experiments are also in, progress- to optimize the baseline process prior to fabrication of logic test vehicles during the next reporting period.. A total of.36 minicells, the basis of the hierarchical design approach, have been designed and simulated. A hand- book containing design information is being prepared for use by the team members. Models are to be introduced into the computer data base for use in logic design. During the next reporting period, a minicell test vehicle, a gate array test vehicle, a 16 x 16 multiplier, and a 64K memory test vehicle will be introduced into the pilot line as a part of the validation process. The minicell test vehicle will contain samples of the minicells and associa- ted delay chains necessary for evalua- tion of minicell performance. The 16- x 16 multiplier is the first VHSIC density logic circuit to be completed using the minicell library and it exhibits a gate density of 160K gates/cm2. The gate array test vehicle will provide test cells of the gate array to demonstrate its perfor- mance. Likewise, the memory test vehicle will demonstrate yield and operational parameters for the 64K memory design. The package development program has identified package requirements and has resulted in development requests' to four package manufacturers. The packaging study -is addressing large pin count packages, 120-220 pins, with leads on 20, 16.67, and 12.5 mil cen- ters. Close center wire bonding, approximately 5 mils, and tape bonding experiments are in progress. The initial emphasis of the 0.5-um pilot-line technology' task has cen- tered on process definition, x-ray and e-beam lithography experimentation, submicrometer test vehicle fabrica- tion, and resulting device physics analysis. Design of an advanced sub- micrometer test vehicle and device and circuit modeling development are also in progress. Process definition problems that have been ad.fressed include thin gate oxide development, dielectric spacer, bird's beak, shallow junctions, and contacts to shallow junctions. Submicrometer n- and p-channel devices have been fabricated. The n-channel 0.8-um devices showed punch-through voltages in excess of 3 V. P-channel devices remain to be optimized. The n-channel threshold voltages varied from 0.2 V for 0.5-um gate length to 0.35-V for 5-um gatelength devices. Devices have also been fabricated using a-beam direct write on the polygate? level. Devices with gate lengths down to Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 VHSIC NOTES - Vol. 2 1 0.25 um are present on these wafers and will be evaluated. A submicrometer test vehicle with three levels of design rules is being designed. Completion of the layout is expected in the next reporting period and initial first-level design rule devices are expected to be fabricated. Chip development is presently. in the preliminary design phase, the, purpose of which is to define in detail pro- ducible chips which meet system requirements. The goals of this phase are specifications, block diagrams, macropartitions, I/O requirements, critical timing, and micro-instruction sets. Of the five chips, the GP con- troller, 16-bit AU, and pipeline AU are complete and a preliminary design document has been issued. The extend- ed AU and the 64K memory will be'com- pleted early in the next reporting period. Analytical models, detailed macro-design, and testability analysis will be undertaken in the next report- ing period. The module development is likewise in the preliminary design phase with the goal of providing the details of mod-. ule architecture required to meet sys- tem requirements. The tasks upon which efforts have been concentrated include module specifications, gate array partitions, instructions, crit- ical timing, and I/O requirements. Of the five modules, progress has been greatest on the complex arithmetic vector processor (CAVP) and the vector scalar processor (VSP) since their architecture is dominated by the 1750A embedded computer design. The float- ing point processor (FPP) is following the first two modules. The hier- archical multiprocessor system con- troller (HMSC) module is paced to sys- tem architecture studies currently under way. The bulk memory module (BM) is paced by both the architec- ture studies and the HMSC. The pre- liminary design specifications for these modules will be completed and analytical models and gate array definition will be undertaken in the next reporting period. The system development effort has con- centrated on the hierarchical multi- processor system (MS) architecture definition and interconnection network development. The HMS study has relied on a multidisciplined team to address scheduling algorithms,. software, hard- ware, interconnection networks, and their interrelations. Architectures being evaluated include distributed and centralized control structures. During the next reporting period the definition of the low-speed computer bus will be completed and the high- speed bus definition begun. The base- line structure will be finalized and interconnection networks defined.' The brassboard support software task is addressing signal-processing aids, the Ada compiler, and the operating system. A structured Ada methodology for signal processing has been select- ed. This technique allows systems analysts to define an operational problem as a set of graphs. The nodes of the graphs are Ada tasks along with control and data transfers. To sup- port these tasks a signal-processing instruction set has been defined. The Ada compiler study is defining the requirements of the front end, the optimization processor, and post pro- cessor. The current plan, is to employ Army/Sotech front end. However, schedule incompatibility is generating difficulty in implementing the plan. Optimization techniques are being selected. The post-processor defini- tion is being paced by the HMS stud- ies. The kernal and radar operating `'system definitions are also being paced by the HMS study. Radar system mission- analysis studies were used to identify baseline radar modes and sequences of radar modes for the ATF brassboard. These, in turn, were analyzed to determine' their Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8 r. 20 ? algorithms, content, and nature. Likewise., the algorithms are: being analyzed to determine their signal processing instruction mix. The end result of this analysis is to generate time lines and work-load descriptions to feed the brassboard simulations. The system. simulation has centered on two areas. The first of these, ECSS It, is directed toward simulating the whole brassboard system under' speci- fied workloads. A simplified two pro- cessor model has been run`. A .complete brassboard model aimed at simulating a real time radar, input buffer is near completion. The second simulation task is to generate an ATF performance baseline on an eclipse computer. The synthetic aperture radar (SAR) mode algorithms 'selected for brassboard implementation are presently resident on this computer and are being further developed for use in the performance baseline. Detailed descriptions of ? VHSIC NOTES - Vol.2 Nc.l three major functional blocks as applied to the brassboard have been completed. The CAD package is an integrated pack- age centered around a data-base man- ager and running on a CYBER computer. The data-base manager and ASSIST sim- ulator are in place. For high-level description and simulation, the ISPS language/simulator is to be added to the system. An automatic test pattern generator and fault simulator are to be moved onto the CYBER from a UNIVAC. A gate array router, a custom layout package, and symbolic layout package are under development. For current design utilization, a data base translator has been written to allow team members access to common information. Training has been held for team members to allow early appli- cation of ISPS for functional simula- tion and design validation. Sanitized Copy Approved for Release 2010/01/06: CIA-RDP91 B00046R000100040009-8