SCIENTIFIC ABSTRACT YELINSON, M. I. - YELINSON, R. N.

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• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

109-2-1-10/17
On the Mechanism of Electron Emission from Thin Dielectric Layers (Cant.)
the phenomenon is correct, the Malter emission may be controlled by doping
the dielectric.
There are 4 figures and 26 references, 10 of which are Soviet, in the article.
SUBMITTED: August 15, 1956
AVAILABLE: Library of Congress
1. Electrons--Velocity 2. Electrons--Energy 3. Dielectrics--Appli-
cations 4. Mathematics--Applications
Card 4/4

(Field emission) (Cathodes)

AUTHOR ELINSON M. GORIKOV V. A.2 VASILYYEV G.F. PA 2576
TITLE Study of the method applied for reduction of autocathode
bombardmen#by the ions of residual gases,
(Issledov4th'iye odnogo sposoba ument - sheniya bmbardirovki
aytoelektrA~ikj-kh katodov ionami-ostatoohnykh gazov.-Russian)
PERIODICAL Radiotekhnika i Elektronika 19579 Vol 2t Nr 2, pp 204 - 218

Reviewed: (7/1957
Received; 4/1957
ABSTRACT Of the three possibilities of reducing the number of electrons
n , e.g. by a considerable reduction of the current average
vilue i according to timeq by the reduotioApf N (oonoentration
of residual gas atoms) and of R (under normal conditions
R s1wL 1 cm) and of the geometric factor R respectively$ the
third method is dealt with here. The reduction of R does not
mean that the anode has to be in close proximity of the
cathode, but a "virtual" anode in produced which is situated
as near the emitter as possible and possesses the property
that the ions formed between the anode and the cathode get
to the point whereas those ions whichare formed behind this
anode are directed towards the negativii electrodes specially
intended for this purpose. Several varietier of electrode
systems are dealt with which form a "virtual" anode near the
point. A four-eleotron system appears to offer the most ad-
CARD 1/2

?A - 2576
Study of the method applied for reduction of autocathode
bombardmenyby the ions of residual gases.
vantages. The various technological methods worked out by the
authors are described. These methods permit all operations to
be undertaken with high accuracy and convenience. The prooose
of electrochemically cauterizing the wire point was especially
simplified. The various experiments are described, e.g.
1. with active adsorbing films by means of two different
methodep
2. experiments of bombarding points of pure tungsten with
mercury ionsp and
3- tests for the determination of the life of valves and the
peculiarities of emission connected herewith.
The system with a strong asymmetric configuration of the
electric field is th%,best means of reducing the detrimental
effect of ion om a-&~'
b b r c' t.
(21 illustrations) ~Oh-
ASSOCIATION: not given.
PRESENTED BY: -
SUBMITTED: 30. 7. 1956
AVAILABLE: Library of Congress.
CARD 2/2

AUTHORt SLINSOM M I. VASILIM9G.F. PA 2 5.9 8
JITLEs -ixjie_rimen;a~fkesearch of the Field Emission of HexaboridtLanfinv
(Eksperimentallnoye issledovaniye avtoelektronnoy smissii
geksaborida lantanal Russian)
PERIODICALt Radiotekhnika i Zlektronika~ 1957, Vol 2, Nr 3t PP 348 - 350
(U.S.S.R.)
Received, 5 / 1957 Reviewedo 6 / 1957
ABSTRACT: Compressed and caked together rods of L&B6 with a diameter of
1 mm and a length of 15 mm served as initial object. In-
vestigation of the emission characteristics was carried out in
autoelectron diodes. The usual measuring scheme was used. At some of
the characteristics a tendency towards saturation was observed.
Between these sections there are some "steps". It was shown
that these "steps" are not connected with any nonreversible pheno-
mena whatever. The appearance of the characteristics confirms that
the borid, cooled to room temperature (after a treatment at high
temperature), at least in the layer bordering on the surface, is a
semiconductor. The existence of several steps (and not, as it
ought to be according to the theory by R.Stratton (Proc.Phys 0c.
B-t 1955p 68t 430 Bi 746 - 757) only one) may be connected wish
the fact that for different plaaes of the emitter the electric
field is different and the breaf-through of the barrier takes place
Card 1/2 successively at different places and at different orders of u.

PA - 2598
Experimental Research of the Field Emission of Hexaborid Lantan.
It is, howeverl also possible that these steps are oonnedtod with
the polyarystalline shape or with the presence of some energy levels
of the electrons on the surface, Preliminary experiments showed that
the LaB6 emitter possesses sufficient stability. At present further
investigations of the substances described are being carried out.
(4 illustrations).
ASSOCILTIONs Not given.
]PRESENTED BTs
SUBMITTEDt
AVAILABLEt Library of Congress.
Card 2/2

Yc 1,
AUTHOR: YELIUSON,M. I., YAW1OF0L'SXAY-1,A.AA.
TITLE; Interdepartmental Senduar for Cathodo Electronics.
vennyy seminar po katoOnpy t~lektronike, Russian)
PERIODICAL: Raaioteldmika i Elektronika, 1957, Vol 2, Nr 5, pp
(U.S.S.R.)
109-5-21/22
(Nezhduvedomst-
666-668
ABSTRACT: At the 4. meeting held on the 4.3ei957 lectures were delivered
on the autoelectron emission.
1.) M.I.YELINSON showed that the present conceptions concerning
the moltw effect process are not able to explain all known
experiment;al facts. The lecturer suggested a new point of
view (explained in detail in Radiotekhnika i Blektronika,
1957, Vol 2, Tir 1, P 75). which is based on an assumed
es3ential heterogeneous potential distribution w1ithin the
dielectric plate.
2.) V.N.SHFMNIK dealt with measurements carried out concerning
the zirconium work function in tungsten.
3.) A.S.SOBOLEVA spoke about the investigation of autoelectron
emission in dependence on hydrogen pressure in a device con-
sisting of a flat anode and a conical or semispherical
cathode.
4.) V.A.SIK01NOV investigated the discharge process in the vacuum
Card 1/2 in the presence of a subignition spark.

109-5-21/22
Interdepartmental Seminar for Cathode Electronics.
5.) I.N.SLIVKOV described the investigation of breakdown in the
vacuum in the case of flat and spherical steel electrodes.
6.) A.I.KLIM reported on the investigations in the electron
jeotor.
M Gp.rAO.BOGDkNOVSKIY spoke about the measuring of resistance on
a tungsten contact when opening the electrodes.
ASSOCL"MON: Not given
PRESEITED BY.-
SUBMIT"M 25.3.1956
AVAILABLE: Library of Congress
Card 212

ELINSON, M. 1.
Institute of Radio Technology and Electronics, Academy of Science, USSR, Moscow.
"Concerning the Problem of Auto-Electronic Emission."
report presented at 4th Intl. Conference on Electron Microscopy, Berlin GFR,
10 - 17 September 1958.

~ .. 1 7
YIME I BOOK EXPLOITATION sov/18o4
Yelinson Morggkb-illich, and Vasillyev Germadiy Fedorovich Vasillyev
Avtoelektronnaya emissiya (Electron Field Emmission). Moscow, Fizmatgiz,
1058. 272 p. 6,000 copies printed.
Ed.: Ye. L. Starokadcmskaya; Tech. Ed: N. Ya. Murashova.
PURPOSE: This book is' intended for engineers and technicians working in
electronics and can also be useful to upper division and graduate students
specializing in this field.
COVERAGE: According to the authors this book is the first systematic presentation
of the results of theoretical and experimental work in the field of electron
field emission. The authors see the possibility of practical application of this
phenomenon to radio physics and electronics. The Introduction is a short ex-
Position of basic data on the energy distribution of electrons in crystals and on
the nature of the potential barrier at the boundary of metals and semiconductors
(dielectrics) in a vacuum. C'iapters 1 and 2 cover the theory and experimental
research in electron field emission ox metals. In Ohfpter 3 the author examines
Card 116

-Election Field Wasion
sav/iW4
the cause of the non-stability of emission and possible ways of increasing the
stability of emission characteristics. In Chapter 4 the authors examine the
theory and extremely limited experimental research done in field emission of
semiconductors. In Chapter 5 the authors discuss aspects of the problem of
nonmetallic complex autoelectronic emitters. Chapter 6 contains data on the
use of electron field emission in the cathodes of electron equilpent and in
electron- emission microscopes of high resolving paver. M.I. Yelinson wrote
the Xntrodaction and Chapters 1, 3, and 5- Chapters 1, 4, and 6 were written
by M.-I. Yelinson with the cooperation of G. F. Vasillyev. The authors give
recognition to D. V. Zernovi. Corresponding Member of the Academy of Sciences
of the USSR, and V. A. Gor1kov, T. I. Kofanova, and A. A. Yasnopollskaya for
their help In compiling the volume. There are 243 references,84 of which are
Soviet, 35 German, 3 Japanese, and 120 English.
TABLE OF CONTENTS:
Editorls,Preface 5
Author6l Preface 7
Introduction 3-1
c ard 2/6

.Electron Field Emission SOV/1604
1. Zonal structure of crystals. Energy distribution of electrons.
Electrochemical potential
2. Potential barrier at the solid-vacuum boundary
3. Different types of electron emission
4. Field emission
Ch. 1. Theory of Field Emission of Metals
5- Introduction
6. Calculating the transparency coefficient of D at T = 0 and
the basic field emission formula
7. Field emission formula for metals in the case of Idealized
Iacute-angle barrier at T= 0
8. Theory of thermal field emission
9. Theory of field emission for metals covered vith adsorbent films
Ch. 2. Experimental Research on Field Emis3ion of Pure Metals
10# Technology of preparing field emitters
11. Surface migration. Shape of the peaks and determination of
electric field on the emitter surface
Card 3/6
21
26
29
33
33
35
44
47
60
62
63
70

Electron Field-Emission SOV/1804
12. Testing the theory. -Dependence of autoelectron(current
density on the field
13. Testing the theory. Dependence of eatoelectron current
density on the work function
14. Testing the theory. Velocity distribution of autoelectrons
15. Testing the theory. Thermal field emission
16. Current density distribution along the surface of the emitter
17. Calorimetric effect
18, Large current densities. The effect of space charge on field
emission
19. Large current densities. Are in a vacuum
Ch- 3. Factors'Determining the Stability of Field Emissions.of
Metals
20. Adsorption of residual gases
21. Certain problems in ion bombardment of emitters and cathode
sputtering
Ch. 4. Theory and Experimental Investigation of Field Emission of
Semiconductors
22s Theory
Card 4/ 6
83
92
~6
100
108
1-18
120
126
133
134
139
154
154

Electron Field Emission SOV/1804
23- Experimental research
Ch- 5. Electron Emission from a Metal into a Semiconductor or
Dielectric Having Strong Fields
24. Contact phenomena at a metal semiconductor (dielectric)
boun&ary
25. Phenomena In dielectrics and semiconductors having strong
electric fields
26. Experimental research on field emission of thin dielectric
films
27. New date of research on electron currents in dielectrics
28. Conclusion
Ch. 6. Uses of Field Emission
29. Introduction
30. Autoelectronic microac,opy
31 Use of field emission in the cathodes of electron
Instr=ents
Card 516
165
168
i6q
183
202
225
228
230
230
232
257

Ele#ron Field Emission SOV/1804
Appendix 1
Appendix 11
Appendix 111
Bibliography
AVAILABLE: Library of Congress
GO /ginp
7-15-59
Card 6/6
260
260
262
265

AUTHORS: -Yelinson, M.I., GorIkov, V.A. and Vasillyev, G.F.
NTLE: FieLd Emission of Rhenium (Avtoelektronnaya emissiya
reniya)
PERIODICAL: Radiotekhnika i Blektronika, -1958$ V01,11,11 N0.31
pp, 307 - 312 (USSR).
ABSTRACT: The field emissioA of rhenium was investigated by
Barnes (Ref.1) but the main shortcoming of his work was the
lack of any data on the stability of the emission when the
emi".ter was subjected to ion bombardment. The aim of the
present work is to provide the missing data. The investi-
gations reported were carried out on point cathodes made of
pure rhenium or of tungsten coated with a layer of rhenium.
The rhenium paints were prepared by means of an electrolytic.
etching of thin rhenium. bars. A typical rhenium 'point is
shown in Fig. 1. The rheniated tungsten cathodes were pre-
pared by depositing the rhenium. electrolytically on to tung-
sten points. First, the emission patterns of both types of
the emitter were photographed (see Figs. 2, 3, 4 and 5)
axid-It'-Was f4uad- -- that in both cases the emitter has the
'-same hexagonal lattice structure. The method of investigation
of the emission stability of the point cathodes, when subjected
C.rdl/2to ion bombardment, was similar to that described by the author

Fie ld Emission of Rhenium 109-3-1/23
in an earlier work (Ref.2). The cathodes were subjected to
bombardment by mercury ions; the pressure of mercury inathe
investigated tube cculd be Varied from about 1 to 20 x 10-- mmHg.
The experimental curves illustrating the characteristics of
rhenium cathodes are shown in Figs. 6 and ?. These are in the
form u(t), where i(t) is the voltage acrose the investigated
tube and t is time; the curves are plotted for a constant
current; in this way, it is possible to avoid the negative
resistance regions and the resulting avalanche-like increase
in currents. By comparing the curves of Fig. 7a.and b, it is
seen that rhenium is about six times more stable than tungsten
(the curves of Fig. 7b are for pure tungsten). Some measure-
ments were also made on the field emission of tungsten in the
atmosphere of mercury vapours and in the presence of hydrogen,
The resulting curves are shown in Fig. 8. The decay of the
emission of a pure tungsten cathode and a rheniated tungsten
cathode, inl'the presence of hydrogen, is illustrated in Fig.9-
by Curves 1 and 2, respectively. There are 9 figures
(including 5 photographs), 1 table and 4 references,'l of
which is Russian, 1 German and 2 English.
SUBMITTED: June 3, 1957
AVAILA13IS: Library of Congress
Card2/2
K_75
H

, /m~- ~' '/m- , I I ~ -
AUTHOR: Yelinson, M.I. 109-3-21/23-
TITLE: Influence of the Gas Adsorption on the Surface of an Emitter
on its Field Emission (0 vliyanii adsorbtsii gazov na pover-
khnosti emitters. nayego avtoelektronnilyu emissiyu)
PERIODICAL: Radioteklinika i Elektronika, 1958, Vol.III, No.3
pp. 438 - 439 (USSR3.
ABSTRACT: Voltage and current of several tubes fitted with point-
type emitters were measured as a function of time. Fig. 1
shows the voltage u and the current J for a cold emitter,
made of lanthanum hexaboride; the emitter was not properly
de-gassed. Fig. 2 shows u and i for a tungsten emitter
which was heated to a temperature of 900 C, while Fig- 3 shows
similar curves for a cold lanthanum. hexaboride emitter which
was properly de-Sas5ed. Wrom these experlments, it.can be
seen that if the emitter is not properly de-Sassed, thp current
will fluctuate; the fluctuations can be removed by de-eassing.,
the emitter or by heating it to an appropriate temperatdre
It was also observed that very strong short current pulses:.can
occur in cold emitters; frequency of these pulses increases
with increasing pressures and is almost independent of the
magnitude pf the steady state current. There are 4 figures.
~x !~;'R
t2l-
4i

SOV/109-3-'7-10/23
AUTHORS-Yelinson 1M.I. and Vasillyev, G. F.
TlTLE: Investigation of the Field Emission of Lanthanum Hexaboride
(Issledovaniye avtoelektronnoy emissii geksaborida lantana)
PERIODICAL: Radiotekhnika i clektronika, 1958, Vol 3, Nr 7,
qp 945-953 (USSR)
ABSTRACT: The work described aimed at the investigation of the
field emission of LaB . in particular, the investigation of
the mechanism of the emission, the adsorption properties,
and chemical stability when subjected to ion bombardment.
The investigated samples were in the foriti of bars havinr~
dimensions 1.5 x 1.5 x 20 n-a. These viere shaped into sharp
points by means of etching baths, the best results beinr.-
obtained by electrolytic etching in concentrated sulphuric
acid by using direct current. The points viere then washed
in ammonia.* . The emissive pointo were then de,,,raszed;
several method:a were tried (as illustrated in Fi,r.2) and it
%J
was found that at temperatures below 13000C a thin dielectric
film was formed on the points; this could be elizinated if
the samples were heated up to 20000C. First, the emission
patterns of the samples were'taken; Fi-.4a. shows the
emission pattern of a cold point, while Fi1c-.4b illustrates
Card 1/4 the pattern of a sample heated to a temperature of 8500C.

-3
10,)_ 10/,
Investigation of the Field Emission of Lanthanum 11-~xabaride
The voltage current characteristics of various samnles are
shown in Fig.5. Curvo3 a and b of FiG.5 correQpond to
emitter temperatures of 00 and 8500C, reapactively; Curve 1
of the figure was taken immodiately aftor licating Wic
emitter while Curves 2, 31 4 and 5 were taken aftor 10, 30,
60 and 60 minutes aftp- bx~nting. A typical graph of the
emission current as a function of time is illustrated by
Curve 1 in FiS.6; Curve 2 in the figure shovis the current
for the case when the voltage was randomly interrupted.
FiS.7 shows voltage-current characteristics of a LaB, emitter
a
immediately after heat~*~&.to a temperature of 1500 C, and
then 15 minutes after the"completion of the heating cycle;
two similar curves for the heating cycle up to 850 C are
also shown. From Fig.-? it is concluded that the work
function of the emitter increases by about 60% when tb-
sample is subjected to poisoning and, secondly that the
L>
mass of the adsorbed gases is eliminated at 8~60C. The
Card 2/4

SOV/109-3-7-10/23
Investigation of the Field Emission of Lanthanum Hexaboride
temperature dependence of the,field emission current is
illustrated by the curves shown in Fig.8. A number of
samples were subjected to pulse tests at voltages ranging
from 9 to 20 kV and at current densities of the order of
107 A/cm2. It was found that a vacuum-type arc discharge
0
was formed when the current densities were excessive. The
effect of ion bombardment on -the emission was investiGated
by measuring voltage u(t) for constant currents, at var-
ious pressures ofthe bombarding mercury. Th results are
shovmoj~ Fig.9 for pressures ranging from 10-~ up to
3 X 1 mm Hg; the figure shows similar curves for tungsten
and rhenium. A large number of the voltage current charac-
teristics measured by the authors differed from the standard
straight lines, which normally characterise the field
emission of metals. Consequently, it was thought that the
emission mechanism in LaB6 is different from that of
metals. It was found, however, that the main cause of the
non-linearity is the poisoning of the emitters during the
measurement of the characteristics (lasting up to 10 see
By employing an oscillograph the time of measurement could
Card 3/4

SOV/109-3-7-10/23
Investigation of the Field Emission of Lantanum Hexaboride
be reduced to less than 0.5 sec and it was found that the
voltage current curves were linear, as shown in Fi-.10.
0
The paper contains 10 figures and 4 references, 2 of which
are Soviet and 2 English.
SUBMITTED: November 29, 1957.
1. Lanthanum borides--Adsorptive properties 4 Janthanum borides
--Chemical properties 3. jAnthanum borides--Bombardment
4. Ion bombardment 5. Field emission--Analysis
Card 4/4

SOV/109-3-8-17/18
AUTt1_()RS: Alekseyeva, A.P., Basalayeva, v.Ya. YelinsoR,__~
Zernov, D.V., Kullvarska7a, B.S., Mt7
Savitskaya, Ya.S., Sena, L.A., Shabellnikova, A.E. and
Yurasova, V.Ye.
TITLE: The Eighth All-Union Conference on Cathode Electronics
(8-ye vsesoyuznoye soveshchaniye po katodnoy elektronike)
PERIODICAL: Radiotekhaika i Elektronika, 1958, Vol 3, Nr 8,
pp 1092 - 1103 (USSR)
ABSTRACT: The conference took place during October 1? - 24, 1957
in Leningrad at the Fizikb-tekhnicheskiy institut Ali SSSR
(Physics-engineering Institute of the Ac.Se.USSR). It
was organised by the Soviet Ac.Sc. and was attended by
Soviet scientists from Moscow, Leninerad, -K4yw and other
towns of the Soviet Union as well as by delegates from
Hungary, Czechoslovakia and Ramania. Altogether, over
one hundred lectures were delivered at the conference.
These were divided into the following sections: thermionic
emission and the technology of thermionic cathodes;
secondary electron emission; photo-electron emission;
field electron emission; cathode conductivity phenomena;
ionieprocesses and gas discharges. Some of the papers
Cardl/2

SOVE109-3-8-1?/18
The Eighth All-Union Conference on Cathode Electronics
read at the conference are published in the present issue
of the journal: in fact, all the papers in this issue
were read at the conference. Some of the papers were
published in an earlier issue of the journal tvol 2,
Or 12, 1957). A number of papers from the conference
are being published in "Izvesiiya AV SSSR, Ser. riz". rirs
4 and 5 and also in various other journals. The present
report gives brief summaries of a large nuinber of the
papers presented at the conference.
SUBMITTED: February 4, 1958
Card 2/2 1. Cathodes (Electron tube) 2. Thermionic emission 3. Secondary
emission 4. Photoemission 5. Field emission

46-4 -1-3.5123
AUTHORS: Yelinson, M. I. and Yasnopollskiy, N. L.
TITLW: & - ' -e 3y~ V.G. P'rokhorov "On the Problem of
On the
Convirting an Ultrasonic Image into a Visital Onie."
(Po povodu stat'i V.G. Prokhorova "K Voprosu
pmobrazovaniya ulltrazvukovogo izobrazheniya v
vidimoye".)
PERIODICAL: Akusticheski Zhurnal, 1958, Vol.IV, Nr.11
p.102. (USW
ABSTRACT: V.G. Prokhorov in his article "On the Problem of
Conversion of an Ultrasonic into a Visible Image,
in Vol.III nr-3 of "Akusticheskiy Zhurnal',
1957, in addition to reporting experimental
investigation of an electron-acoustic-convertor,
discussed also mechanism of the action of the converto--*
In connection with Prokhorov's article the present
authors wish to point out that the mechanism of
conversion of an ultrasonic into a visible image,
together with the threshold sensitivity of an'electron-
acoustic tube, was diseussed in detail by D.V. Zernov
in his work "On the Mechanism of Formation of Video-
Card 1/2 Signals in Electron-Acoustic Convertors of Images",

46-.-4-1-15/2~
t00n the Axticle by V.G. Prokhorov "On the Problem of Converting
an Ultrasonio Image into a Visual One.*.
Zernovid paper was published in a collection, nr.2,
of Transactions of the Institute of Automation and
Tel'emechanics of the Academy of Sciences of the USSR
in 1952, i.e'. five years earlier than the publication
of V.G, Prokhorov's article. Unfortunately V.G.
Prokhorov does not refer in any way to D.V. Zernov's
work.
(This is a complete translation)
ASSOCIATION: Institute of Radio Engineering and Electronics,
Academy of Sciences of the USSR, Moscow,
(Institut radiotekhniki i elektroniki.AN SSSR,
Moskva.)
SUBMITTED: November 10, 195?-
1. Impe-Conversim
2. Imp converter"pplications
Card 2/2

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jow. 107

SOV/109-4-1-22/30
AUTHORS: Yelinson, M.I. and Zhdan, A.G.
TITIE: Novel Prop-e-ftt6s Of the Electron Emission of the Systems
Containing Thin Dielectric Layers (Novyye svoystva
elektronnoy emissii sistem, soderzhashchikh tonkiye
dielektricheskiy sloi)
PERIODICAL: Radiotekhnika i Elektronika., 1959, Vol 4, Nr 1,
pp 135 - 137 (USSR)
ABSTRACT: The electron emitters which were investigated (see
Figure la) consisted of a tungsten point fixed to a semi-
ring. The point was first given a coating of quartz
whose surface was subsequently treated with carbon by
employing the thermal diffusion method. The tungsten and
the outer layer of the coating material are in contact
(electrically). When investigating the field emission
of this structure, it is found that a stable emission can
be obtained at comparatively low operating voltages..
However, at a certain value of thq emission current, a
breakdown effect is observed; this results in the
appearance of a crater on the point of the emitter
Cardl/3 (see Figure 1), though the actual tungsten point is not

SOV/109-4-1-22/30
Novel Properties of the Electron Emission of the Systems Containing
Thin Dielectric Layers
uncovered. The emission after the breakdown does not
disappear and displays a number of novel interesting
characteristics. These can be silmmarised as follows:
1) the emission commences at comparatively high voltages
(5-10 kV); 2) a self-activating effect is observed;
the increase in the emission current is not accompanied by
the increase in the required voltage but, on the contrary,
the voltage decreases; 3) the emission displays an
anomalous temperature dependence; a decrease in tempera-
ture results in an increase of the current; 4) the
emission is very stable and 5) in some cases the break-
down of the emitter does not lead to the appearance of the
above effects but these may be stimulated by heating the
emitter to a temperature of 1 200 vC. The above emission
effects are illustrated by the curves of Figures 2 and 3.
There are 3 figures and 2 references, 1 of which is Soviet
and 1 German.
Card2/3

SOV/109-4-1-22/30
4
novel Properties of the Electron Emission of the Systems Containing
Thin Dielectric Layers
SUBMITTED: May 4. 1958
Card 3/3

AUTHOR: Yelinson, M.I. SOII/109-4-1-24/30
TITLE: Influence of the _f_nt~erLal Electric Fields in a Semi-
conductor on its Field Emission (Vliyaniye vnutrennikh
elektricheskikh poley v poluprovodnike nayego avto-
elektronnuyu emissiyu)
PERIODICAL: Radictekhnika i Elektronika, 1959, Vol 4, Nr 1,
pp 140 - 142 (USSR)
ABSTRACT: Voltage-lurrent charac-,;eristics of the field emission of
carbon-saturated quartz, when plotted in the usual logar-
ithmic co-ordinate5,, is non-linear, as can be seen from
the figure (see P 140). This type of characteristic cannot
by employing the normal equation (Refs 1
ba silained
and 2 which is in the form represented by Eq (I). The
fcllcwing notation is adopted in Eq,(l): no is the
conductivity electron concentration, IT is the temperature
of the lattice, E is the external electric field, 0 is
the Nordheim function, e is the permittivity, n 9 is the
concentration of the impurity centres, A is the'energy
interval between the.iiTurity level and the bottom of the
Cardl/3 conductivity zone. q 1) can be also written as Eq (4)

SOV/109-4-1-24/30
Influence of the Internal Electric Fields in a Semi-conductor on
its Field Emission
where D denotes the exponential term of the equation.
However, n in Zq (4) denotes the true concentration
of the conductivity electrons, while T e is the electron
temperature, which is different from the lattice temperature.
Quantities n and T 0 are functions of the internal
electric field EB in the semiconductor. These quantities
can be expressed by Eqs (5) and (6), respectively(Refs 3-5)-
The parameter 6 of Eq (6) is given by Eq (7) for the case
of atomic semiconductors and by Eq (8) for ionic semi-
conductors. The internal fields for ionic and atomic semi-
conductors are expressed by Eqs (11) and (12), respectively.
Consequently, the final formula for the field emission of
ionic semiconductors is expressed by Eq (13); this can also
be written as Eq (15) or if 02 I-e-1 I it is-in the form
of Eq (15"). From this it is seen that the current, when
plotted in logarithmic co-ordinates, is a non-linear function
Card2/3 of 1/E . If the quantity 02 is neglected, Eq (13)

SOV/109-4-1-24/30
Influence of the Internal Electric Fields in a Semiconductor on
its Field Emission
can be finally written in the form of Eq (16). There
are 1 figure and 6 references, 1 of which is English
and 5 Soviet.
SUBMITTED: May 22, 1958
Card 3/3
f

AUTHORS: Yelinson, M.I. and Vasillyev, Sayj~09-4-4-22/24
TITLE: Certain Pecull-arities of the Field Emission of Germanium
(Nekotoryye osobennosti avtoeloktronnoy emissii germaniya)
PERIODICAL: Radiotekhnika i elektronika, 1959, Vol 4, Nr 4,
pp 728 - 729 (USSR)
ABSTRACT: The field emission of n-type germanium was investigated
and the results are shown in Figures 2 and 3. The
investigated samples were in the form of bars having
dimensions I x I x 10 mm and were prepared from a crystal
having a resistivity of 2-10 -Rcm. The bars were
electrolytically etched into fine points (Figure 1). A
typical voltage-current curve of this type of emitter is
shown in Figure 2; the middle portion of the characteristic
is rectilinear, while in the region of small currents, the
characteristic deviates from the linearity; also at large
currents the characteristic is non-linear and the current
has a tendency to increase. Figure 3 shows two voltage-
current curves taken at two different temperatures; these
correspond to comparatively small currents.
T1

AUTHORS: Gorlhov, V.A., Kofanova, T.I. sov/109-4-6-27/27
TITLE: Inter-departmental Seminar on Cathode Electronics
(13th Meeting) (MezhduvGdomstvennyy seminar po Icatodnoy
clektronilco) (13-o zasedaniye) (Now Item)
PERIODICAL: R-adiotelchnika i elektronika, 1959, Vol Nr 6,
pp 1o67 - 1o68 (ussn)
ABSTRACT: The meeting of the seminar took place on February 2, 1959/
at the Institut radioteldiniki i elektroniki AN SSSR
(Institute of Radio-engineering and Electronics of the
AcoSc., USSR). The follo"ains lectures wera delivered and
discussed:
im - 111irvestigat:on of the Field Emission of
A
P
Dielectrics Containing Admixtures";
A.I. Krol-china - "Destruction of the Dielectrics Subjected
to Ion Bombardment and Heating";
V.A. Shrednik - "Dependence of the Wor1r. Function of the
Thin-layer Cathodes on the Coverage Region";
C axA-fAr'
I

69928
s/109/60/005/05/016/021
E140/E435
AUTHORS: Bykhovskaya, Ye.V., Kharc enko3 Ajjjj Yelinson, M,T.
ana Zernb-v--,D.V.
-
TITLE: .V
Electron-BeamtSxitching Tubesi~
PERIODICAL: Radiotekhnika i elektronika, 1960, Vol 5, Nr 5,
PP 849-857 (USSR)
ABSTRACT: The theory of beam switching tubes is discussed and then
certain types of single-contact and multi-contact tubes
and their basic parameters are described. The single-
contact tubes have low internal resistance in the
conducting stage 1-5 to 2-5 k;l and substantial
operating currents up to 20 mA with high resistance
(104 M-11) in the open state. The multi-contact tubes
have 5 to 10 contacts with resistances of 5 to 10 k-"'!
with operating currents up to 2 mA. High-voltage tubes
permitting the switching of signals at potentiAls higher
than I kV have also been developed. There are 15 figures
and 3 referenceB, 2 of which are German and I English.
SUBMITTED: February 7, 1959
Card 1/1

"o 113 71 11V
AUTHORS: Yelinson, M.I.,
and Mrgeva
s/ioq/6o/oo5/oo8/ol8/O24
E140/E355
Gor1kov, V.A., Yannopollskuya, A.A.
G.A.
TITLE: Pulsed Field Emission at High Current Densities
PERIODICAL: ltadiot~khnika i elektronika, 19609 Vol. 5,
No. 8. pp. 1318 - 1326 + 1 plate
TEXT: The article concerns the geometry of the widely-used
point emitter, as sketched in Fig. 1. The experiments
described in the literature have neglected the influence of
the cone angle a , Yet this angle has a substantial effect,
for the following reasons! it determines the azimuthal field
distribution and thus the total emission cone 4 e more
fundamentally, a larger angle improves the heat conduction away
from the tip and thus reduces the possibility of a vacuum arc
forming; the angle affects the stability of the tip geometry
by counteracting surface migration of atoms during heat treat-
ment and by influencing the field distribution close to the
emitter it affects the character of ion bombardment of the
emitter surface. The present work is concerned primarily
Card 1/0~

s/iog/60/005/008/018/024
E140/E355
Pulsed Field Emission at Ifigh Current Densities
with the geometry of the cone angle a and the pulse field
emission of a new class of refractory alloy emitters, using
La B6and ZrC points~ Tungsten points were also studied as a
control. Fig, 2 shot,?.,, the technique for the successive
enlargemeut of the angle a . Successive etches are made in
caustic soda, the tip of the point being masked with glopules
of acrylic resin. Microphotographs of typical tips. showing
a range of angles between 150 and 850 are reproduced in Fig-3
(notei the scale of c is IOX smaller than the others),
It was assumed that Drechsler's approximation (Ref. 4) is
valid and therefore only those measurements were employed in
the final treatment which fitted this approximation fairly
exactly, The volt-ampere characteristics obtained are typified
in Fig. 9b, where the rectilinear characteristic at low
current densities agrees with the theory of metal field
emission. At high current densities there is an appreciable
Card 21

s/ioq/6o/oo5/oo8/ol8/024
E140/E355
Pulsed Field Emission at High Current Densities
dovnwards deviation from rectilinearity, The density at
which this deviation occurm is distributed over a wide range -
6 7 2
from 3 x 10 to 3.4 X 10 A/cm The working densities
of field emission current obtained from the refractory alloys
is at least an good as that from tungsten. The deviation
of the characteristic from the theoretical is in the opposite
direction from the results of Ref. 1, where the deviation is
in the direction of higher current densities.
An interesting result of the work in the dependence of pre-arc
current density on cone angle a The relationship is plotted
in Fig. 11; the points marked x are the experimental points
and the points marked 0 have been corrected for the mean
radius of the emitters. The experimental data obtained
exceed the theoretical predictions (Ref- 7), Two possible
reasons are that the theory neglects thermal radiation and
formulates the boundary conditions for large angles a
incorrectly. The deviation from rectilineariy at high current
densities, noted above, may be due to the influence of space
Card 3/11

S/109/60/005/008/018/024
E140/E355
Pulsed Field Emission at High Current Densities
charge, Another possible reason is that the shapv of the
potential barrier is not in accordance with the classical
image force theory (see the abstract of the previous article
- PP~ 1315 - 1317). The presen)~ authors consider the space
charge explanation more lilely, and advance a number of
reasons. However, the presence of a segment of the charac-
teristic with increased rate of growth of current density
requires further consideration. The results indicate that
the greater stability and higher working current densities
obtained from points with a large cone angle a are
advantageous, There are 12 figures and 9 references;
3 Soviet and 6 non-Soviet,
Card 4A7

88164
S/109/60/005/011/013/014
(1,103~ 1137, //,VI) E032/E514
AUTHORS: Yelinson. M.J. and Zhdan, A. G.
TITLE: Cold Emission of Electrons from Thin S102 + C Films on
.Tungsten
PERIODICALt Radiotekhnika i elektronika, 1960, Voi.5, No.11,
pp. 1862-1865
The emission of electrons from thin carbon activated
quartz films on tungsten has been investigated as a function of the
applied electric field. The thin quartz films and their activation
were prepared by the method described by the present authors in
Ref.6. The method is as follows. Tungsten wires, bent into the
forms illustrated in Fig.1, were polished electrolytically and were
then placed in a tetraethyl silicate vapour at 1100*C. The thickness
of the quartz films deposited in this way lay between 3 and 10 )1,
depending on the duration of the treatment. Next, the tungsten
wires were placed in a methane atmosphere with a pressure of about
10 mm Hg for 4 to 8 hours at 1300*C. The second lead was in the
form of a platinum, tungsten or copper spiral winding on the quartz
film. Measurements of the electric field at the layer, the current
through it and the emission current were carried out both under
Card 1/3
N

S/109/.60/005W111/013/014
E032/E514
Cold Emission of Electrons from Thin S102 + C Films on Tungsten
static and pulsed conditions and the duration of the pulses and
their repetition frequency was varied within wide limits. Figs.2,3
and 4 show the experimentally obtained characteristics. Fig.2 shows
the dependence of the emission current ig on the current through
the film (or the potential difference across the film) at various
temperatures (curve 1 - 25*C, curve 2 - 1200*C, curve 3 - 1350OC;
anode voltage U a = 200 V). As can be seen, the emission current
increases very rapidly with increasing internal field in the
film. It was found that for a given field at the film, the
efiliBSiOn current is practically independent of the t&mperature.
An appreciable emission begins at a field of Z -,PlO V/cm. Fig*3
shows the emission current as a function of the anode voltage at
250C (for currents through the film of 650 and 600 mA, respectively).
The absence of , saturation ... in these curves is noticeable.
Fig.4 shows a typical volt-ampere characteristic of a quartz film.
Ohm%'Iaw holds up to 5000 V/cm and beyond this point all the currents
are higher than those predicted by Ohm's law. The emission is
stable in time but is sensitive to fluctuations in the potential
Card 2/3

88164
s/iog/60/005/011/013/014
9032/Z514
Cold Emission of Electrons from Thin SiO2 + C Films on Tungsten
difference across the film. it was found that the emission takes
place at small local centres and the emission current density is
rather high. 2The current density was found to be of the order of
about 1 mA/cm . The nonuniform distribution of emission over the
emitting surface means that the properties of the film are very
dependent on the technology of preparation.
There are 5 figures and 6 referenc,eal 2 Soviet and 4 non-Soviet.
SUBMITTEDt March 12, 1960
Card 3/3

20421.
S/log/60/005/012/019/0319
E192/E382
AUTHORSs Yelinson, M.I., Zhdan, A.G. and Vasillyev, G.F.
TITLEs Interpretation of the Shape of Voltage-current
Charactoristics of the Field Emission in Semi-
condu~~tors
PERIODICALs Radiotekhnika i elektronika, 1960, Vol. 5,
No. 12, pp. 2004 - 2008
TEXTt A typical voltage-current characteristic in Ig j
and I/E coordinates for metals is in the form of a straight
line for a widu range of currents i and voltages u
Such a characteristic is shown 6in Fi�. 1. However, at
current densities J IN 7 x 10 A/cm a considerable
,deviation from the linearity is observed, Thus, a character-
istic bendan)ears in the vicinity of the point A (Fig. 1)
which occurs at lower j . Further, in the vicinity of the
point B the rate of the current increase becomes greater
again. The deviation at the point A can be explained by
the effect of the space charge of the emitted electrons and
by the deviation of the true form of the potential barrier
Card I/
"f

20421
s/ioq/6o/oo3/oi2/ol9/035
E192/E382
Interpretation of the Shape of Voltage-current Characteristics
of the Field Emis;5ion in Semiconductors
from the clAbsical law of the image forces. Also it should
be taken into account that at high electron energies the
transfer coefficient of the potential barrier is given by
- 1/2 3/2 -1
4 ~/2 m E
J_ _X (Y
4 CXPI
fteE
The reason for the rapid increase of j in the vicinity
of point B is not yet clear. For the semiconductors
a typical voltage current characteristic for field emission
at low temperatures is also in the form of a straight line.
flowever, vevy often the experimental characteristics deviate
from rectilinear form and theSe deviations can be of various
types. Such characteristics for the emitters made of
Card 2/6

20421
s/log/60/005/012/019/035
E192/E382
Interpretation of the Shapo of Voltage-current Characteristics
of the Field Emission in Semiconductors
SiO2 + C and Al 203+ C were investigated in an earlier work
(Ref. 2). It was found that the possible reason for the
deviation of these characteristics from linearity is the
influence of the strong internal field in the semiconductor,
which changes the distribution function and the electron con-
centration, The characteristics of SiC2 Ge and ZnS (taken
from Refs. 3, 4, and 5) are also shown. The peculiarity of
these three characteristics is the dQviation from linearity
at sinall currents. A new type of voltage-current characteristic
was discovered. The materials used in the investigation were
semiconductors based on SiO. and A120 3' In order to make these
emitters conducting, Si02 was activated with carbon and tungsten
was added to A120 3* The particular feature of these substances
is their low electron affinity coefficient 1 eV (Ref.2).
Card 3/6

20421
s/log/60/005/012/019/033
E192/E382
Interpretation of the Shape of Voltage-current Characteristics
of the Field Emission in Semiconductors
The voltage-current characteristics of three emitters made
from Sio, + C is shown in Fig. 6. It is seen that the
characteristics deviate from linearity at low currents
(see point G). These characteristics are novel in that the
bend at point G has nothing to do with the barrier produced
by the presence of the surface charges since this is overcome
at comparatively low electric fields. This is due to the
fact that emitters have a very high resistance and in the
investigated range of currents they have considerable internal
fields. Secondly, the space-charge effect is insignificant
due to the fact that the emitted currents are very low. In
general, the characteristics of the type shown in Fig. 6
can be obtained at higher temperatures; in fact, at room
temperatures the characteristics are often rectilinear while
at higher temperatures they have the shape shown in Fig. 6.
Card 4/6

20421
s/log/60/005/012/019/035
E192/E382
Interpretation of the Shape of Voltage-current Characteristics
of the Field Emission in Semiconductors
The shape of the characteristics can be explained if it is
assumed th
at G(y)= 0 , w1joke ()..is the Nordheim. function.
This means that the potential barrier at the boundary between
the semiconductor and vacuum practically disappears and the
exponentibl.emission law is replaced by a comparatively slowly
2
increasing function such as i = RE
There are 7 figures and 6 references: 3 Soviet and
3 non-Soviet.
SUBMI'ZTED: March 12, 196o~
Cnrd 5/6

24917
a 0 S1181161 Oc3/0036/(14/0"
C/ 3 "021'B211
AUTHORSt Ste panov, G.V., Pokalyakin, V.I., and Yo";njurt-, M-T~
TITLE: Characteristics of thq hot ele-.tran ginlasion frc,:;
p-n_Junctions in SIC crystn"s
PLRIODICALt Fizika tverdop tela, -1. 3, no.. 6, 1961, 1*76~-17167
TEM The authois report on the electror. em'-uslor, frnw 1-n
_ty.14t? :~f,
~e Msgjjj
SiC crystals in pulsed operation as depenling -pt.,!j tt
blocking voltage Tj and temperature T. SIC was chosin as thp ocject -if
the investigation for being chemical2y somewhat :re--Iu ar-:i tt~iaastl *.~e
threshold energy of impact ionization In SIC is higher than the inergy of
electron affinity (Li= 4.3ev, I = 49'.0, Thq om-4.9aion.0f ho,. eleftrons
from natural p-n junctions in SiC (arising when growing / -SIC by the
sublimation method) had been firt studied in Ref.3, The 2-,f 2., 0.3mm
sized single crystal specimens displayed the p-n ~-anstion on the (1000)
face. The measuring apparatus Is schematically shown In Fig.l. Negative
square pulses were used (amplitude up to 400v, duration 21jeoc, repetition
frequency 50 sea- whereby the specimen sould bf) kept at a constart
Card I/
__~:7777

26917 S/16!/6'/G03/OC6/C-14/C34,
Characteristics of the hot BIU/B201
temperature. The voltages were measured by an ost-illoscope, ard the
emission currents by a tube electrom#vter Iseneitiv--y _!D_ a). The
ampere characteristics were recordel t,~th in the forward and ~n thE, _tr-
verse direction at different frequen~J.:-s ani di.ff'-~ren; temperallira&- The
rectification factor proved to be very smal.l. In %ldition, the ez1sS;'-,r,
Current i e as a function of U was examlyed (whIsh had teen neglected in
Ref-3). The emission centers were found to be bright pointa (elactror
gas, heated by high field-strength concontrations)t thq V.45-4bia aumines."erl:e
is a consequence of the recombination of hot electrons with impurities.
The emitting points have linear dimensions of With absolute -.'a!1jes
of i e- 50~a the emission current dqn3itles are ' ,, (Whl'~h fiza
results of Ref-3). i. risea with growing temperature and attains satura-
tion even before the beginning of impact Ionization; .hs- i e(U) curves
shift with a rise of temperature toward lower U values. The effestivILY
of,a-emission e/i through is very small 4); the (U) !:urves
Card 2/4
I><

24917 5/181/61/003/006/014/031
characteristics of the hot ... B102/3201
display a maximum, the height of which is reduced with a iise of tempera-
t.ure. Sputtering of BaO rais-es ie considerably, by 9jae order of magnitude,
at besti i (the current passing,through the.junction), is-left
through
practically.unchanged inlthks connection. V.G. Sandomirskiy is thanke*d
for hie dicussionst and N.Y. Sumin and A.M. Fadeyev for their assistance.
Thereare 5 figures and 11 referencesi 2 Sov"et-bloc and 9 noh-Boviet-
bloc. The most important references to Englich-langUage publications
read as followst Ref.2t J. Tana. Nature, 181, No- 46019 38, 1958; Ref-D
L. Patrick, W.J. Choyke, Phys. Rev. Lett.,.Z, No. 2Y 48, 1959; Ref-83
L. Patrick JAPp 31? No- 8, 1505, 1960.
ASSOCIATIOYs Institut radiotekhniki i elektroniki AN SSSR Moskva
(Institute of Radio Engineering and Electronics, AS USSR,
Moscow)
SUBMITTEDi January-6, 1.961
Card.3/A

20583
%4/706 (/J37 -O)v'-Y) S/109/61/006/002/015/023
-? 9190/E435
AUTHORS: Yelinson, M.I., Stepanov, G.V. and Pokalyakin, V.I.
TITLE: Emission of Hot Electrons From p-n Junctions in
SiC Crystals
PERIODICAL: Radiotekhnika i elektronika, 1961, voi.6, No.2,
pp.292-297
TEXT., The emission of hot electrons from natural junctions in
SiC crystals is investigated as a function of the reverse voltage
(Un) across the junction and temperature (T). SiC is of particular
interest, since ti >X (Ref 1): (ci - threshold energy of
impact ionization, % - work function for hexagonal SiC;
ei = 4.3 ev, % = 4.0 ev). Also its chemical inertness should
give surface stability. According to R.Goffaux (Ref.4) and Ye.T.
Kharlamova and G.F.Kholuyanov (Ref-5) the most favoured mechanism
is that the partly ionized donor centres become ionized. Earlier
experimental data of L.Patrick and W.J.Choyke (Ref.2) did not
include variation of the emission current 13 with field in the
junction or with temperature, nor was the nature of the emission
centres; clarified. However, they did establish the high
densities > I amp/cM2 and the law i-A = ik
Card 1/9 CKfa

20583
S/109/61/006/002/015/023
Emission of Hot Electrons E190/9435
where iCK8 - current through the junction and k - constant.
The apparatus and method are briefly outlined (Fig.1). The
crystals were grown by sublimation and the presence of junctions
established from electro-luminescence and the volt-amp
characteristics. The crystals were selected for brightness when
reverse biased. Surface preparation consisted in removing the
S102 film and polishing. Both d.c. and pulse voltages could be
applied, the latter such that heating effects could be obviated,
even at high reverse voltages. The emission current was
measured with an electrometer of sensitivity -w10-13 amps
The measured emission current was in the range 10-12 to 1;-6 amps.
The emission builds up with time under direct current and at
elevated temperature (-400*C). After eight hours, the emission
reaches a steady value and becomes very stable. This build up is
probably related to the surface cleanliness. The junction voltage
necessary for emission varies over a considerable range.
Comparison of the pattern of emission on the luminescent screen
with the pattern of light spots on the crystal showed the latter
to be the source of emission. As Un is increased, the number of
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20583
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Emission of Hot Electrons Eigo/z435
emission centres grows. The linear dimensions of the centres are
from I to 101L. The current density, calculated from the sum of
the areas of the emission centre's is 1 to 10 amp/cm2. This
confirms the most important result of Patrick and Choyke (Ref.2).
In Fig.2, the rapid growth over AD is particularly noticeable
together with slow increase over BC. Curve I corresponds to a
very rapid change of temperature with increasing voltage. For
Curve 2, room temperature is maintained by use of 10ILsec pulses
over the whole voltage range. Curves 11, 21 are the
corresponding emission currents. The slight fall in I& for
temperatures above 400*C may be due to lattice scattering. Pulse
investigation carried out for temperatures of 20 and 750C showed A/
very weak temperature dependence in this range. This result
disagrees with the theory of Sh.M.Kogan and V.B.Sandomirskiy (Ref.1)
which is suitable for Ge and Si. Consequently, it seems that the
increased scattering with increased temperature compensates for the
increased number of electrons or that the field in the junction
changes with temperature. The current saturates at a voltage
which is still far below breakdown. In Pig.4, it is seen that the
plot of ib as a function of ieKO is independent of temperature
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20583
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Emission of Hot Electrons ... Eigo/E435
and voltage, I.e. the given value of ijb always corresponds to a
given value of icKs. This is explained by the high junction
fields which depend only weakly on Un (e.g. BOV Un),
acceleration is thus always adequate and not dependent on Un
and T . Emission simply increazes with the number of carriers in
the junction. Note the maximum of y at the point B (the bend).
Evidently over the portion BC a new scattering mechanism comes
into play, the number of electrons capable of being emitted growing
at a slower rate than total number of electrons. The relation
between i9 and icKe is also illustrated In curves taken at
liquid nitrogen temperature. The curves in Fig.5 were taken on
another crystal. The sharp increase has been established as beingk~
due to heating of the crystal. The maximum value of y is about
10-4 . i.e. very small. Clearly this is due to losses in the
very highly doped n-type layer, where the electric field is
negligible. The following conclusions are arrived at:
1. The current densities are very high ja = I to 10 amp/cm2
which is in agreement with Patrick and Choyke (Ref.2).
2. The emission is non-uniformly distributed over the surface.
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s/ioq/6i/oo6/002/0l5/023
1,;iA.9sion of Hot Slectrons ... Eigo/E435
3. The temperature defiendonca is weaker than the theoretical
dependence for Ge and Si; this is associated with the increa-iod
scattering nullifying the increase of carrier concentration with
tomperntiure.
The ratio y is very small, about 10-4. This is posnibly
related to scattering of electrons near the emitting -murfnce; it
has a maximum at a particular voltage U11 * The decrease of Y
above this point is due to a new powerful scattering mechanism.
5. The etaitted current is strongly associated with reverse current
and independent of temperature and voltage. This is explained by
the strong junction field which is always sufficient to
accelerate the electrons.
AcItnowledgments are expressed to V.B.Sandomirskiy for advice and
to N,.V.Sumin and A.M.Fadeyeva for assistance. There are
5 figures and 5 references: 2 Soviet and 3 non-Soviet.
SUBMITTED: September 7, 1960

20583
S/109/61/006/002/015/023
Emission of Hot Electrons ... E190/E435
Fig.l. Experimental apparatus and circuit for the investigation.
K SiC crystal
0 tungsten springing of the point

CT-
thick molybdenum rod to increase 4
heat conduction from the crystal
C - accelerating anode plate
- fluorescent screen on a
transparent inetallic base
1 - pulse generator
2 - pulse amplifier
3 - moter for measuring stationary Cr
or mean current
/I- mater for measuring d.c. or
7
J
pulse voltages . _
j5 tube electrometer
6 constant current supply xP
7 anode voltage supply
8 -. temperature measurement.
Card .6/9

S/109/61/006/002/015/023
Emission of Hot Electrons ... E190/E435
i-Fig.2. Comparison of ptatIc and pulsed junction characteristics.
Curves 1,11 I(Il'a
i
CK8 and 19 for 8
static operation
a
s fUIIctiOn Of Un
2
Curves 2,21
for
iCK8 nnd 19
pulsed operation,
Temperature 200C
Curve 3 slice
temperature during
static operation.

.205
R3
/006/002/015/023
S/109/
Emission of Not Elec trons E190/E435
a
iCKB as function
of y and /P -Ir ft
V
function of iCKIa
off
Curve 1 - static
Curves 2 3
pulsed at 20*C

Curve 4.- pulsed' 1 %0
at 750C.
. .0

&2

Card..8/ ......
1C.I'ma

?U563
s/log/61/oWo02/015/023
~'Emission of Hot E3ectrons ... E.190/E435
Fig.5. Static characteristics 19 and icKs as functions of
.Un at -180OC-

to FYI -

Card 9/9

23182
B/019/61/000/008/008/055
0 A153/A127
AUTHORSs Yelinson, M.I., and Gorikovt V.A.
TITLEt Device for generating transient electron packets
PERIODICAL: Byulleten' izobreteniy, no. 8g 19619 20
TEXT: Class 21a4, 13- No- 137545 (466917/26 of January 16, 1958).
1. A device for generating transient electron packets in hollow resonators
or waveguides, distinct from others in that in order to obtain monochrome-
tie electron paokets with high current density, an autoeleotronic cathode
(or several cathodes) is placed inside the resonator (waveguide) constitut-
ing either a part of the resonatorPs (waveguidele) wall or its point where
as the resonator (waveguide) itself is situated in a vacuum. 2. A device
as above distinct in that for thee~urpose of leading-out the electron flux,/
a part of the resonator (wavegaid wall is made in the form of a gauze-
like net.
Card 1/1

20588
s/109/61/006/002/020/023
9, 3 E140/E435
AUTHORS: Yelinson, M.I. and Gor1kov, V.A.
TITLE: Certain Features of Field-Emission Cathodes Operating
in Microwave Fields
PERIODICAL: Radiotekhnika i elektronika, 1961, vol.6, No.2,
pp-336-339
TEXT: A qualitative analysis is given of the operation of a
field-emission cathode in a microwave resonator. Due to the
pronounced non-linearity of field emission cathodes the emission
in a sinusoidal electrical field occurs in the form of short
electron packets. For example, about 42% of the charge emitted
during a period can be concentrated in a phase interval of 16*,
during which the electric field varies by 1 0.5%. Experimentally
the elec on concrtration in the packet has been obtained in the
range 1011 to jol cm-3. Furthermore, the conditions of ion
bombardment for such a field emission cathode are much more
favourable than the case of a d.c. device. There are 5 figures
and 3 references2 2 Soviet and 1 non-Soviet.
SUBMTED; October 19, 1960
Card 1 1

22908
.5/io9/6i/oo6/oo4/023/025
q, 1~ 3 0 10 2/// 4L EiWE163
AUTHOtiS: Zhdan, A.G., and Yelinson, M.I.
TITLE: The energy distribution of field emission electrons
from semiconductors
PERIODICALi Radiotekhnika i elektronikat vol,6t No*4, 1961,
pp. 671-672
TEXTj This note is a continuation of previous work by
Yelinson and colleagues (Refs. 1, 2), on the theoretical and
experimental study of the influence of internal electric fields
on semiconductor field emission. It was found earlier that the
emission in the presence of an internal field is substantially
non-equilibrium. The apparatus used in the present study in
similar to that of R.D. You-, and E.W. MUller (Phys.Rev., 1959,
113, 1. 115). It was found th&t the field emission of high-
resistance semiconductors does in fact have a non;equilibrium
character; at internal fields of the order of 10 V/cm there is
a substantial increase of electron temperature; with increase of
lattice temperature the rate of increase of electron temperature
decreases; at large internal flelds a substantial number of
Card 1/2

22908
S/109/61/oo6/oo4/023/025
Ei4o/E.i63
The energy distribution of field emission electrons from
semiconductors
em-itted electrons occur above the potential barrier.
There are 2 figures and 3 references: 2 Soviet and I English.
SUBMITTED: January 3, 1961
A
11.*-
AIN&
Card 2/2
14,

VLINSONP M.I.; DOBRYAKOVA, F.F.; KRAPIVIN, II.F.; HALINA, Z.A.; YASNOPOLISKAYA,
Concerning the theory of field emission and thermoicnie field
emission of metals and semiconductors. Radiotekh. i elektron
6 no.8:1342-1353 Ag 161. (MIRA 14:7)
(Field emission) (Metals-Electriq properties) (Semico~ductore)
Al

29321
S/109/61/006/010/019/027
,?1 3 00 '31 t/246/D302
AUTHOR4: Basalayeva, N.Ya., Yekimenkoj T.M., Yelinzon
,G..:rnovp D.V.t Savitskayal Ya*Sop and Yasnopollskaya,
A.A.
TITLEt Investigating some properties of a cold m4gnesium-
-oxide cathode with Wlf-enhancing emission
PERIODICALs Radiotekhnika i elektro%ikat v. 6, no. 10, 1961t
172Q - 1740
TEXT: The aim of this work was to study some p*Werties of cold
magnesium oxide cathodes which were not investigated in technical
literature. In the experimental apparatus, cathodes made by cata-
'nesses (6 - 35p
phoresis and spraying were used, with varying thick
and 12-60 ji, respectively). They both had highfp UBness (80 % of
the -;o~,al volume . They had nickel substrate o 11pe tilpe NM (mag-
nesium added) and platinized nickel* The instrument used was a
diode with tubular cathode of oval cross-section and a mesh-anode.
The starter used was a thin (100 ii 95) tungsten filament. The ca-
Card l/A 3

29321
S/109/61/006/010/019/027
Investigating some properties ... D246/D302
thode was activated b~ baking it for 10 min. at 850 0C. Number of
specimens approx 0 400 Their volt-ampere characteristics co%tespon-
ded to those in the 1 terature. a) To investigate the effect of
oxygenp specimens were ox1dized in cycles, at 8500C in atmosphere,
starting at 0.1 mm of Hg pressure. Then the max. stable current, le
was measured with the corresponding potential difference, Uat bel-
ween anode and cathode. Ie/Ua was then taken as an approximate cri-
terion of the qualitliof the cathode. Fig. 4 shows Ie/Ua as a funz-
tion of the number of cycles (H) for cataphoresis cathodese Figo 5
- the same for sprayed cathodes. The same types of curves were ob-
tained for platinized nickel subf;rate (Pt layer n-60 P thick),
which proves that NiO layer does not play any significant role in
the mechanism of emission. b) Investigation of temperature-depen-
dence showed that there are both reversible and irreversible chan-
ges of the emission. If the cathode is heated higher than 400 0C9
irreversible processes start. It was shown that heating up the MgO
layer is responsible for limiting current densityt hencet improve-
ment by its cooling.,c) The time dependence of the starting pro-
cess was also investigated. It was shown that it is sufficieni *%.o
Card 2/6

293?l
S/10 61/006/010/019/027
.Inves't'igatizig some properties ... D246YD302
illuminzite thp cathode to start the coid emission. On the other
hand the decre o_se of the incandescence of the starter electrorle
greatly increasc_ the starting time. d) The influence of the pre-
sence of a magnLt..c field is shown in Fig. 14. e) The increase in
thickness (up to 30 - 40 V) of sprayed cathodes impmves their emit-
tive properties. The opposite is true for cataphoresis cathodes,
but comes from single centers, situated in cracks for thick ones.
g) By positively charging.up the MgO layer, it was impossible to
start the emissiong thus it is necessary to introduce a small
amount of free electrons for starting. At the end the authors dis-
-,cuss the various hypotheses proposed in technical literalure to ex-A-r
plain the effect and state they intend to test them in their future
experiments. There are 14 figures and 11 references; 6 Soviet-bloc
and 5 non-Soviet-bloc. The references to the 4 most recent English-
language publications read as follows: D. Dobiachek, Electronics
and Cor-ins, 7, 5, 26, 1959; A.M. Skellett, B.G. Firth, D.W. Mayerg
Proc. 1. 1.13., 47g 10, 17049 1959; Y. Mizushima, Y. Igarashi, T.
Imai, J. Phys. Soo. Japan, 15p 4, 729, 1960; H.N. Daglish, Proc. I.
-E.E., 108B, 37, 103, 1961.
SUBMITTED: May 23, 1961
Card 3/0

ZHDAN, A.G.; YELINSON, M.I.; SANDO M SKIYO V.B.
Study of the spectra of autoeleotrons emitted by semiconductors.
Radiotekh. i elektron. 7 no.4t670-686 Ap 162. (MIRA 150)
(Semiconductors) (Electrons)
iK-

B/10 007/009/004/018
6:, D409%3~0i/i
AUTHORS: Gortkov, v.A., Yblinsonj M-I-v and Sandomirskiy, Y.B.
TITLE: On the role of the space charge in drawing field-
emission currents of high density
PERIODICAL: Radiotekhnika i elektronika, v. 7, no. 9, 1962,
1495 - 1500
TEXT: The possible causes are considered of the observed deviation
of the current-voltage characteristics of field-emission of metals
at high current densities. In this connection the authors analyze
the role of the space, charge and of the shape of-the potent ial
barrier at the bounda:ry emitter7vacuum. It is ahovin that if a suf-
ficiently strong positive space-charge is formed in the emitter-
anode space (e.g. by ionized residual-gas molecules), this lcads to
a certain type of deviation of the current-voltaGe characteristict-.
Pirst, the space charge is calculated by an approximate method.
The calculations are checked by experiment. The pressure in the ex-
perimental diode varied between 10-8 and 10-4 mm Hg. The prepara-
tion of the tungsten emitters, as viell as the'experimental procedu-
Card 1/2

S11 09/62/007/009/004/0't 8
On the role of the space charge D409/D301
re were described in the references. It is concluded that the ini-
tial region of deviation of the cur~rent-voltage characteristics is
mainly due to the influence of the space charge. The barrier effects
are apparently weak and appear in the region of higher electric
field strength. The experimentally observed shift of the entire
current-voltage characteristic towards larger values of the field,
is apparently due to the polarization of residual-gas molecules.
There are 3 figures. The most important English-language reference
reads as follows: N.C. Barford, J. Electronics and Control, 1957,
3, 11, 163.
SUBMITTED: January 30, 1962
Card 2/2

B/109/62/007/009/005/018
D409/D301
AUTHORS: Gor1kov, V.A#t Yelinsont M.I.f and Yakovleva, G.D..
TITLE: Theoretical and experimental investigation of pr e-are
effects in field emission
PEMIODICAL: Radiotekhhika i elektronika# not 9, v, 7, 1962,
1501 - 1510
TEXT: A more advanced theory of the vacuum arc is developed which
takes into account the temperature dependence of the parameters of
the emitter and is adequate for a wider range of variation of the
geometrical parameiers of the emitter. The heat-balance equation for
conical emitters is derived. After transformations, this equation
becomes
a 2T + 2 6T 8T
:--_ qj (T) (T) 1 + '?3 (T) 0, (7)
br2 r or 67t IF2 r r4
where q 1' is related to the specific heatt T2 to the radiation coe"
ficient, and the current intensity and resistivity; r denot6s
Card 1/3 (e3 to

3/109/62/007/009/r,05/618
Theoretical and experimental ... D409/D301
the emitter radius. E ualtion (7) was solved by numerical met~ods-
The dependences T = f?t) and T = f(r) ivere calculated for various
values of I; thereby the parameter 6 (the semiangle of the emitter
cone), assumed the following values:m?; 15; 25; 35 and 450. The
current density j equalled 2-108 A/c . The above theoretical con-
siderations viere compared with experiment. The theoretical and ex-
perimental curves were in good qualitative agreement; the quantita-
tive discrepancies are apparently due to various factors which-are
not taken into account by theory (the damping effect of the space
charge, the use of the wean current-density instead of the actual
current density, etc.). The theoretical calculations for small se-
miangles a ( -~ 300) y are qualitatively in agreement with the results
of VI.P. Dyke a. oth., (Ref. 1: Phys. itev., 1953, 91P 5, 1043). Por
values of a >-300, the authors obtained a stronger dependence of
the critical current-density jcrit on a. The theoretical and eXDe-
rimental curves j crit = cp(a) and j = -~(t) with U = const., were in
good agreement. No use of self-heating effects can be made, in view
of the instability of the processes involved. In practice, it is
most convenient to use emitters with large semiangle (a = 900 and
Card 2/3

8/109/02/007/009/005/018
Theoretical and experimental D409/D301
above). Such cathodes have grea-t stability in the "vacuum" arc#.
small emianion-anglea and considerable operating current-densities.
There are 10 figures.
SUBI',!ITTAIJD.- January 12, 1962
Card 3/3
Mui

LUTSKIY, V.N.; YELINSON, M.I.
Experimental study of the energy spectra of electrons emitted
by a yttrium oxide cathode in strong electrical fields.
Radiotekh. i elektron. 8 no.3:457-470 Mr 163. , (MIRA 1613)
(Thermilonic emission) (Electric fields) (El~ibtrons-Spectra)

YELINSON) M.I.
Development of cathode electronics. Veot, AN SWIR 32 no.3:0-91
Mr 162, (MIRA 15:2)
(C4thode rays-Congreoses)

YELINSON, M.I._; KUDINTSEVA, G.A.
Field emission cathodes based on metal-like high-c-elting c=Foundso
Radiotekh. i elektron. 7 no-9:15-U-1518 S 162. (YIRA .15-9)
(Cathodes) (Field emission)
77777

-flG(k)/ZMP(q)/ENT(m)/E;S (w)~-2/BDS AFFTC/ASD/SSD/
L 12923-63' UTW/E
99D-3 'JD/AT/rjPV;)-"
M=510N Vat AP3000573 s/0109/63/008/005/0878/0880
AUTHOR: Basaleqeva,,-.V. Ya.; Yelinson,.M. 1.1; Zernov D. V.
TME; Relationship of self-oustained cothode emission to temperature
Radiotekhtika I alektronika,, V, Bg no, 5, 1963.. 878-880
TOPIC TAGS: self-sustained cathode emission.. liqui&nitrogen tcm~ratum-
ABSTRACT: Adevice has been developedfor investigating variations of the self-
sustained cold-catbodeVemisslon from an 1MgO cathode with changes in temperature
within a range from -196 to +500C. The MgO layer van deposited along the center
portion of a 3-mm diameter nickel tube closed at one end., vhich was, then sealed
In a glaso flask. Heating was effected by passing current throuSt the sector
of the tube bearing the NZO; the sector was cooled by filling the tube with
liquid nitrogen, Prior to making temperature meezurements the device was sub-
merged in liquid nitrogen in order to avoid local. condensation of residual gases
and vapors upon cooling of the cathode. Measurements have shown that at a tem-
perature close to -196C self-sustained emission stopped completely. From -120
-to- ~a6oc- a -few -microamperes_ of self -emission van achieved. With a further
Card 1/2

L 18923-63'
ACCESSION TIR: AP300057.3,
nerease in temperature,, current increased slowly at first and then rose rapidlyffl;
passing to a maximum at about M., and aftervarda dropped off steadily up to
the 500C test level. A different curve was generated by decreasing temperatures,
giving a hysteresis ascribed to residual effects in the cathode. It is suggested
that the sharp drop of emission vith decrease in temperature is due to the ac-
cumulation of space charges resulting in a field dilatribution vithin the surface
layer which inhibits emission. The decrease at high temperature is due to the
decrease of field vithin the layer owing to on increase in its conductivity.
Orig. art. has: .3 figures.
ASSOCIATION: none
SUMUM D: 12jan63 DATE ACQ.- 3OMay63 ENCL-. 00
SUB CODE-, PH 210 W SOV-- 003 000
Card 2/2

lM90.;6
3
-f z- --T9 Z'_- 4
4CCESSION NR: APNO0574 S/0109/63/008/00510881/0883
AUTHOR: Basalayeva,-N. Y4; Yelinson, M. I.; Zernov, D. V.; Savitskaya, Ya. S.
TITLE,. The role of porosity of cathodes ith self-sustained emission
SOUACE i RadiotakhnikA i elektronika) vo 6, no.5, 1963, 681-883
TOPIC TAGS: cold cathode, self-sustained emission, nonporous surface, emitter
,i porosity, current emission, anode voltage, dielectric material, uniform magnetic
field
ABSTRACT: A device has been developed for the investigation of the distribution
of,cold-cathode self-Austained emission from a nearly nonporous surface in order
to establish a correlation between the emission phenomenon and emitter porosity.
A1,O.. was selected as the d2,electric material because of its low porosity and was
'o'ited in thicknesses between several hundred and several thousand Angstroms.
d
ep 5
The entire device was placed in a uniform magnetic field directed perpendicular
to the cathode survace, so that the pattern of current emission could be observed
on a fluorescent screen. The behavior of emission as a function of anode voltage
and time elapsed after the application of starting current is described. After
i.Card.
K,

lohgo-63
ACCESSION NR: AP3000574
testirg, the tube was dismounted and the distribution of poresin the-Al"03 layer-.-:
,-,,,---was- investigated- ----The results- showed that--at f ilm -thicknesses above 1000 A
the emission originated from I to 3 centers located close to the cathode ends,
where the film was apparently thinner and contained fissures. The main part of
the cathode., where no pores were detected, did not emit. In films of several
hundred AngsLroms in thickness the presence of individual point centers of emission,
densely and uniformly distributed on the cathode surface, and a corresponding
pattern of porosity-distribution were observed. It appears form the Al.0, tests
that some porosity is a requisite for self-sustained emission. However, this
conclusion should not be arbitrarily extended to other dielectric materials, which
may possibLy.emit from compact (non-porous) layers. orig. art. has: 3 figures.
ASSOCIATION: none
SUBMjTTED.-_,12Jan63- DAT9- :7~~ENCL-.--=Go -
ay
SUlk CODE: ~PH NO REF SOV: 002 OTHER; 001
as/
Card 2

FACCESSM UR: AP4043352 --810161/64/006/008/2343/2352 Z
~;.AUMORSz Yelinson, K. I.; Iatskiy, V. N.
TXTLE: ExperimLental investigation,of the spectral composition of
hot electrons emitted by a silicon pn junction
SOURCZ-. Fizika tverdogo telar v. 6, no. 8* 1964, 2343-2352
TOPXC TAGSt silicon, electron emission, high temperature el*ctron,
pn Junction, cesium, electron temperature, emissivity
ABSTRACT:' In view'of the limited scope of the only published report
on the subject (J. Z. Moll et al., Phys. Rev. Lett. v. 7, 87, 1961),
the authors measured simultaneously the spectral comp6sition of hot
electrons and the integral characteristics of a typical hot-electron
emitter(cesium-coated silicon p-n junction). The investigations
were made on silicon voltage-stabilizer elements rated 20--25 volts.
The spectral composition was measured by the retarding-potential.

ACCESSION NR: AP4043352
method in a three-electrode spherical system using slotted anode
diaphragms and provided with a removable attachment for cesium
coating of the silicon crystal. The test procedure and equipment
are briefly described. The results have shown that at high energies
the electron energy distribution is Maxwellian. The electron tem-
perature amounts to 4000--5000K. Simultaneous measurements were
made of the dependence of the current through the sample on the
crystal voltage, the dependence of the emission current on the crys7
tal voltage, and the dependence of the collector current on the
collector potential for different values of the crystal voltage.
The maximum value of the electron temperatures for the different
s-amples ranges from 1000 to 7000K with the most frequently encoun-
tered values being 4000--5000. The saturation of the emission
current is connected with the limited growth of the electron tem-
perature a~ a function of the crystal voltage. "The authors are
grateful to V, B. Sandomirskiy for a discussion of the results and
!~-to Ve N. Kozlov for help with the experiments. Orig, art. hass
Card 2/4
- - - - - - - - - - - - - -

~:,7,jmx= r -MR%'i AP4043352
AS figures.
ASSOCIATION: Institut radiotekhniki i elektroniki AN SSSR, Moscow
(Institute of Radio Engineering and Electronics# AN SSSR)
1,
SUBMITTEDs 22Feb64 ENCLs 01
SUB CODE: 98.-Ec NR REP BM 006 OTHZRt 005

L-1 WDAN, A G.; KRAPIVIN, -V.F.; LINKOVSKIY, - Zh-.B.; LUTSKIY, V.N.;
SAND0141a'SKIY, V.8.,
Theory of a "noncontact" version of the emission of hot electrons
from semiconductors. Radiotekh. i elektron. 10 nc.?t1288-1294 J1
165. (14IRA 180)
1. Inatitut radlotokladki i elaktroniki AN SSSR.

P ig L" (1,
[ACCESSION TIR: AP5020129 uR/olo9/65.!01r1008/1500/1506'
7
537-525-2+5`7- 53'.
AUTHOR: Yelinuon, M. L Zhdan, A. 0. Ktidintseta, 0. A. ; Mirrunovn, M. Y(-.
TITU: Thermionic and field emissions from stannic oxide
SOURCE: Radiotekhnika i elektronika, v. 10, no. 8, 1965, 1500-15o6
TOPIC TAGS:, ~thermionic emission, field emission, stanni oxide
ABSTRACT: Thin (0.1-0.3 P) polyerystalline SnO2 films deposited on an optically-
polished quartz were subjected to constant'and pulsed (100 pps) voltages. A very
intense hot-electron emission van observed at low voltages, which demonstrates the
possibility of a strong "overheating" of the electron gas in thin Sn02 films. The
curve of film voltage vs emission current was typical of previously studied emis-
sion 'Systems; Viz., the-' emission current first increased rapidly and then tended to'
saturate. The current-voltage characteristic of the film is linear vithin a vide
range of voltages; the durve of emission plotted against the fil-M voltage had its
maximum at a low voltage. A'controllable high-current-density stable field emicsion
from a SnO2 film having a thin break -was observed at low voltages. "The authors
wish -to thank V. -B. S andomirskiZ and Sh, M. Koe;lan for a useful discussion of the
7
-Card - 1/2

L 2991-66
;ACCESSIOH,NRs AP5015416 UR/0020/65/162/00VOT89/0T90
i'AUTHOR: Yelinson, M. I.; Sandomirskiyt V, B.
iTITLE: Contribution to the theory of volt-ampere characteristic of a field-effect
ifilm. triode
~SOURCE: M SSSR. Doklady, Y. 162, no. 4, 1965, 789-690
'TOPIC TAGS: volt ampere characteristic, thin film circuit, semiconducting film
:.ABSTRACT: It is shown that if account is taken of the fact that film triodes con-
t
itain a large number of traps which lie sufficiently far from the edge of the band,
.then the'equation for the static volt-ampere characteristic, derived on the basis
:of the one-dimensional model, can be extended beyond A-he cutoff point, into the
saturation region, so that the volt-ampere characteristic can approximate more
'iclosely the experimental data. The results obtained for the saturation region are
:in better agreement with experiment than those obtained by the Shockley theorye
10rig. art* has: 5 formulas. This report van preparedby V. A,, Kotellnikov
iASSOCIATIOUi Institut radiotekbniki i elektroniki skademii nauk SSSR (Institute of!:
Radio Engineering and Electronicag Academy of Sciences,68SH)
i Card
I IN

L 2691-60
.ACCESSION Nflt AP5
015416
SUBMITMD.- 12Dec64 ENCL: 00 SUB CODE: ECI.
NO BEF SOV-. 000 OTMM: 002
7:~:
'~2
Card 2
11--l-ml.,

-L-07 Wp(t)ZE T lip
46o-.t~ -,-EWTIM.VF
A%.4- NKI AT0033657 SOURCE CODE: UR/0000/66/000/000/0384/038~~
AUTHOR: Zhdan, A. G.; Abbyasov, Z.; Yelinscn, M. I.; Chugimova, M. Ye.
ORG: none
TITLE: Studies of thin-film field-effect transistors based on CdS
SOURCE. Voprosy plenochnoy elektroniki (Problems in thin film electronics); sbornik
statey. Yoscow, Izd-vo Sovetskoye radio, 1966, 384-389
TOPIC TAGS: field effect transistor, thin film circuit, volt ampere characteristic
ABSTRACT: Operating characteristics of thin film FETa were measured, with particular
interest in the effect of temperature extzWs on tratisient response. Samples were
vacuum-deposited, and consisted of CdS-A1 ~6urces and drains, with SiO(CaF2)Al gates.
Film thickness was from 2 to 5mm; gate widths were either 9 or 18 p. Response to
square wave pulses varied widely, depending on both pulse length and differences in
the crystalline structur'e a ng samples. Fig. 1 shown the different responses to
100-sec pulses obtained fraa three samples. The action of "fast" and "slow" trapping
is described as governing the observed rise and decay effects. Temperature tests,
I Card 11_1

L 07360-67_,_
ACC NRs P&6033657 Of
Card

.L 07360-67 T-
A-c-CNR: Y6033657 01
-2
done at 10 mm Hg from 20C to 130C, showed general inprovement in characterietics
with increased temperature, including an increase in gain. This indicates that at
higher temperatures the deeper lying traps play a predominant part. Volt--ampere
characteristics as functions of temperature are also given. Orig. art. has'. 5fi&uree.
SUB CODE: 09/ SUBM DATE: 27jun66/ ORIG RE-F; 001/ ATD PRESS: 5101

L 2o542z;66 W W/FWT (171)/T/04P (t) IJP(c) 'JDIGG
/0118
ACC ?(R: X B735 SOME CODEt MV03861661003100310114
AUTHOR: Ogrin! Yu. F!; 1~~skiyt V. N.; Yelinsonj, Me_
ORG: Institute of Radio igineerl!!g Md Electronicep Acadeaw of Sciences SSSR
(Instii:a radiotekhniki I elektroniki Akademii nauk_Sd__8~_R
TITLE: Observation of quantum size effects in thin bismAl flil'mfl
-7
SOMCE: Zhurnal eksperimentallnoy I teoreQbeskoy fiziii. Pialma V Tedaktsiyuo
Prilozheniye,# v. 31 noo 3,# 1966) 3-14-118
TOPIC TAGS: bismuth, galvanomagnetic effectp magnetic thin filmj, Han effects
magnetoresistancej, semiconductor property
ABSTRACT, The authors have investigated the thickness dependence of the resistivi-
ty W the Hall constant (r .0 and the magnetoresistance (Ap/p) of Bi films at
300o 76, and 4,2K (magnetic ~Ieldgtoendlcular to the plane of the film). The
films were prepared.by sputterindl'~Ue_(99.9999%) Bi in 10-0 mm Hg vacuum on mica
heated to 70--80C. To reduce the scatter In the values of the measured quantitieo$
caused by difference between substrates,, 3.2 samples of different thickness were
sputtered on a single substrate. Electron-diffraction investigations have shown
that the film structure had a texture in which the disorientation of the cz7atal-
lites did not exceed 10--15*. The measurements of po Ap/ps, and the Hall emf were
1/2

L 2054Z-66
ACC NR: AP6008735
made by a null method. The magnetic field during the measurements was 8 koe, A
characteristic feature of the thickness dependences of pT/P2D0j, AP/Pil RHO and the
su
Hall mobility is the presence of oscillations of all the me sured quantities as
functions of the film thickness. The distance between neighboring maxims. (or mini-
ma) is - 400--500 A. The amplitude of the oscillations increases with decreasing
temperature. Assuming the obtained oscillations to be manifestations of quantum
size effectsp' the authors use the experimentally measured period of the osciUa-
tions and extimate the effective mass of the carriers. The agreemeat of the ob-
tained value (0.01wo) with the published data can be interpreted as a transition
of the semimetal into a dielectricO and that the effects obtained are quantum size
effects. The tentative character of this deduction is emphasized Im the conclu-
sion. The authors thank V. B. Sandomirskly for an evaluation of the work R. 1.
Sheftall for the structural analysis., and Ye. S, Baranova for help with Ups mea-
surements.. Orlg* art. has: 1 figure and 1 formula.
SUB COM. 20/ SM DATE: iwei:65/ ORIG REF: 002/ OTH R": 003
0
i CarO_219

ACC NR: AP60Z7249 SOURCE CODE: UR/0109/66/011/008/1536/1537
AUTHOR: Zhdan, A. G.; Sheital', R. N.; Chugunova, M. Ye.; Yelinoon, M. 1.
ORG: none
TITLE; Proportioa of cadmium-sulfida films produced by vaCuUm-ar-taying onto
directive backings
SOURCE: Radiotekhnika i elektronika, v. 11, no. 8, 1966, 1536-1537.
TOPIC TAGS: microelectronic thin film, cadmium sulfide f
ABSTRACT: C. A. Escoffery did not obtain high-quality single-crystal CdS films
apparently because of nonoptimal experimental conditions (Solid State Electronics,
1963, 7, 1. 31). The present article reports the successful preparation and
testing of CdS films sprayed onto muscovite, flogopite, NaCl, KC1, and OL-A~
R. Zuleeg's method of spraying was used (Solid State Electronics, 1963, 7, 1, 31).
Card I/ Z UDC: 539.216.ZZ:546.,,812.2

ACC NR: AP60Z7249
Exact data re the spraying process yielding high-quality single-crystal CdS films
is reported. Test results: resistivity of muscovite -deposited CdS film was
110 CM2 /V
10 7 ohms - cm; Hall mobility, sec; at low spraying temperatures,
0. 05 ohm. cm and 10 CM2/V sac, respectively. G1 ss-deposited films showed
4 a
10 ohms. cm and I cm 2/V sec. respectively. Other data 'As reported. Orig. art..
~has: 5figures.
SUB CODE: 09 SUBM DATE-. 07Apr66 ORIGAEF: 002./ OTH REF: 007
'Card

YELINS01i, U.K., inzhener.
Morn literAture on exchange of experience in repairin-., electric
locomotivos! ("Equipment for reDairing olleetrin locemr,tivo apppratuvt.~'
T.S.Shart. Reviewed by R.H.P.1inson). F-Ielr!,i tepl.ttpgri no.7:3 of 'cover
JI '57. 01MI. .10: 9)
(Electric locomotiveR-Ynintenprice nnd repair)
WeMmUff -NMEWAVEM

MINSUI Rollo,#, inzh.; KOROLEV, Yu,S.# inzh.
Study of the operation and maintenance of the electrical equipment
of passenger cars. Trudy MIT no.205:64-70 165. (MIRA 18t9)