SCIENTIFIC ABSTRACT YASKOLKO, V.YA. - YASNETSOV, V.S.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001962220020-7
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 1, 2001
• Sequence Number: 20
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

-- - - ------
48-_~,-,'26/56
TITLEs On Phosphors Based on CaSO 4 (0 foeforakh w oanove CaSO 4)
0-005 to hundreds of roentgens could be measured by using a
photomultiplier with a galvanometer for determination of
brightness with a screen of 1.5 cm 2 area. One of 'the advan-
tages of applying C&SO 4 for this purpose is its non-sensitivity
to visual light.
The report was followed by a discussion.
Two Russian references are cited.
INSTITUTION: Central-Asian State University im.Lenin
PRESENTED BYj
SUBMITTEDt No date indicated
AVAILABLE: At the Library of Congress.
Card 2/2

NOSMIKO, B.M., RIFSTW, L.S., TAMMM, V.Ya.
I----------
DatermInation of the characterletics of trapping centers of
crystalline phosphors. Trnd7 SAGU no.14805-90 159.
(MMA 13.-7)
(Phosphors)

23742
S/ 089/61/010/006/008/011
0 ~//Oz 10,3 3 B102/B212
AUTHORS: Krasnayap A. R.t Hosenko, B. M., Revzin, L. 5&I
Yaskolko, V. Ya.
TITLE: Use of a CaSO 4 Sm phosphor in dosimetry
PERIODICALt Atomnaya enargiya, v. 10, no. 6p 1961, 630 - 631
TEM The authors suggested a dosimeter (Zh. Tekhn. fiz., 26, 2046 (1956)),
which will operate with CaSO -Sm phosphor and exhibits alimited ability
4
for the c onservation of the-light sum stored. For this purpose CaSO 4-
based phosphors with a plurality of activators have been investigated
with respe Iot to their luminosagnt properties; It was found that CaSO 4-Sm
only will combine the'properties of a good storage ability of the light
sum with sufficient sensitivity. This phosphor has been further
investigated. The thermal - deexcitation,curve of this phosphor shows
three peakst at 65, 120 and 200 0C (at a heating rate of 40 deg/see.).
The light sum of the last peak amounts to 90 % of the total light sum.
Card 1/3

S/08 61/010/006/008/011
Use of a CaSO4 B102YB212
The thermoluminescence spectrum of the phos hor consids of three narrow
bands .having maxima at 6200, 5900 and 5600 C their intensities behave
like 56 3 43 1 1; the spectrum does not change during extinction. The
light sum stored by the phosphor is a linear funclion of the radiation
dose of 0.1 - 25 000 r; the dose rate (0-005 - 104 r/hr) influences the
stored light sum not directly. The sensitivity of the CaSO 4"Sm phosphor
amounts to about 1/10 of that of the CaSO 4-Mn phosphor. A comparison of
the stored light sums of these,phosphors (by blackening of a photographic
plate) shows that the "absolute" sensitivity of the CaSO 4-Sm phosphor is
2.5 times greater than that of CaSO 4-Mn phosphor if the spectral sensiti-
vity is taken into ac8ount. Keeping the phosphor at an increased
temperature (40 - 120 C) will deareaso tho light num and change th8
spectrum(at the beginning the first two peaks become weaker, at 70 0 tho
de-excitation of the third peak also starts). At a weak but long
radiation of the phosphor practically no losses of the light sum will
occur; this has been found in a 42 days long radiation with 0-005 r/hr.
Card 2/3

Use of a CaSO4
23742
s/o8g/61/010/006/008/011
B102/B212
The stored light sum measured was equal to that calculated (corresponding
to a dose of 5r). This property of the phosphor makes it possible to
employ it for dosimetric purposesy even at small doses. This phosphor
(like CaSO 4-Mn) cannot be excited by visible'light (direct solar
radiation) but in contrast to Caso 4-Mn visible light is causing de-exci-
tation (0-5 lux for 4 hrs will cause a 25 ~ loss of the stored light
sum). Since CaSO -Sm is keeping the stored light sum much longer than
- 4
CaSO 4-Mn, this phosphor.is very well suited for permanent measurements,
even at higher temperature (up to 10000). There are I figure and
1 Soviet~-blo'c*reference.
SUBMITTEDs December 15, 1960
Card 3/3

2o614
31048/61/025/003/002/047
-~Vr3l~-00 B104/NOV
AUTHORSs Yosenko, B.M., Revzinq LoSep
and Krasnayap A.P.
TITLEt Thermoluminencenc* with different modes of excitation
PERIODICALs Izvestiya Akademii nauk SSSR. Seriya fizicheskaya,
v. 25, no. 3, 1961t 3 f1k -321
TEXTt This is a reproduction of a lecture delivered at the 9th Conferenne
on.Lumineacence (Crystal Phosphors), which'took place in Kiyev from June
20 to 259 1960. The authors used CaSO Mn, PbSO Mn, Zn Sio Mnq ZnS-Ag.
4- 4- 2 4-
and ZnS-Cu phoalphors to find the light sums of steady luminescence S at,
afterglow S a9 and thermoluminescence S t~ qprodueed by electron excitation-
(T, - 0.5 - 7 kevp J - 10-5 _ 10- 10 alcm )p beta radiation (S35 ; 40-500/0)
and photo-irradiation (PPV -2 (PRK-2)-tube with filter). The specific
light-sums t and were also determined. Measurements were made
4 at' ~a tth
in the temperature range from -180 to +300C at heating rates of 60 C/min
Card 1/7
- 0-1. M.-M-N OF 300~101_ 1101 ~010 N I ~E_ ~__

20814
S/048/61/025/003/002/047
Thermoluminescence with ... B104/B201
and 1500C/min. The excitation densities were intercompared on the basis
of the number of the excited ion pairs ;p produced per unit volume and per
unit time. The measurement results are discussed for every phosphor, se-
parately. CaSO 4-Mn has at 900C a main peak of thermoluminescencel mea-
sured values corresponding to this peak are listed in Table 1. Table 2
gives the dependences of the specific light sums on temperature. PbSO _Mn
0 4
has one peak of thermoluminescence at 54 C, the relative light sums being
equal under beta excitation and electron excitationg and about 2.5 times
as large as in the case of photoexcitation. On a temperature rise up to
room temperature, the relative light sum produced by beta excitation in-
creases by the sixfold at the expet~se of steady luminescence. The spec-
trum has two bandep'an orange band'of manganese (Am. 615 mp)9 and a blue
band of PbSO4 (XM- 425 ma). A photoexcitation yields an orange lumines-
cence at all temperaturesp and also an orange thermoluminescence. An elec-
tron excitation gives rise to an orange luminescence at room temperaturep
which turns blue on a temperature drop. Beta excitation produces a blue
luminescence with a small orange portion. Zn2sio 4-Mn has two peaks of
Card 2/7

2083J4
S/048/61/025/003/002/047
Thermoluminescence with
B104/B201
...
thermoluminescence (a complicated one at 880C, and one at 7500. ZnS-Cu
has a green band and two peaks of thermoluminescence (at -530C and 220C).
More details are given in Table 3. ZnS-Ag has a complicated peak of ther-
moluminescence, which can be separated into two maxima: one at -1050C and
one at -640c-' More data are given in Table 4. A fluorescence effect of the
cathode rays is observed on thin layers of the said phosphor, which are
practically transparent to the exciting light. The phosphor is exdited up
to saturation by an ultraviolet radiation with ~- 365 mp.. The final part
of the paper deals with differences between excitation by corpuscular radi-
ation and by photons; it is stated in this connection,.that a consideration
of excitation density and excitation depth well explains the differences
observed. The appearance of the fluorescence effect of the cathode rays is
explained by the fact that on an excitation of luminescence by electrons the
eldetric field produced by partLele charges in the crystal leads to a flu-
There are 4 tables and 6 Soviet-bloc references.
orPscence.
ASSOCIATION: Kafedra optiki Tashkentskogo gos. universiteta im. V. I.
Le-iina (Department of Optics of Tashkent State University
imeni V. I. Lenin)
Card 3/7

20814
3/048/61/025/003/002/047
TherMolumineacenco with B104/B201
Legend'to Table 1: 1) type of excitation; 2) specific light sum of
thermoluminescence at 20OC; 3) thesame at 180OC; 4) particle energy in
ev.; 5) i; 6) 9 number of ion pairs produced per unit-volume during excita-
tion; 7) N number of ion pairs produced in one particle track. A) exciti-
tion by elhtrons, B) beta excitation.
B114 U03.
(TC-r 20') (TCT 180') VCT
Gy C111ta ?IT
28 14 1500 JOIN loll
114 0:7 15-~-180 1013-~-iold OU-~-1016 lots

4vU.Uj
S/048/61/025/003/002/047
Thermoluminescence with B104/B201
Legend to Table 2: temperature dependence of specific light sums of ther-
All., (c).
moluminescence (A) steady luminescence (B), and the ratio 9r AO St
W M. 41), W -127*
.4911 OW11-
-r, 256 228 200 143 135
183 164 160 155 147 145
7CT IW 173
C 71, 1 0,9 0,78
42
142
'K/
Card 5/7

20814
Thermoluminescence with ... S/048/61/025/003/002/047
B104/3201
Legend to Table 3t 1) mode of excitationt. 2)~Tr - specific light sum of
afterglow divided by that of thermoluminescencet 3)~IT 4) and
5~ the same as sub 3) referred to the two peak,te eratures. 6) R,
8 particle concentration. A) photoexcitation beta excitation,
C) electron'excitation.
L
I CCK-1 CM-6 N. CM-,
1311,1 U03. Vill
0,02 0,03 0.
4143-2 0,04 5,5 J'o Ai-A 0, lot,
lug, 1017
2,0 1$., '
0,03 0.07 to 'Jol to
110 np(me- 0,23
C- JIB. -rcK
Pat
Card 6/7

ZU014
S/048/61/025/003/002/047
Thermoluminescence with ... B104/B201
Legend to Table 41 11 mode of excitation, 2) U in kev, 3) number of ion
pairs pyoduced per cm of particle track, 4) 5) light sum of thermo-
luminescence in relative units, 6) thickness of excited layer, 7)q ggr'21W
17
i.e. specific light sum of afterglow divided by the specific light sum of
thermoluminescence, 8)~T i.e., specific light sum of thermolumin-
escence divided by steady luminescence, 9) saturationp 10). limit value of
light sum of afterglow, A) photoexcitation, B) electron excitation.
TaGaitma 4
6 7- e
ST npc-
U. kcV NA. 1. CM no rT 11ACIJUICIfIle
CM
f
1015 3-110 2-t0-" O'l 0,3 110T -
11.2 2. - 110 S 2-101
JUIT log 2.10-3 to-, T
lot
3 1017 101: 1,5. 3.10.-1 5.10-2 15. IU_3 Ilm

3
lot? 102, .10-3
- -
3, Wd
-
- 110 I
S
S
2-103
0,5 1017 5. IW-t - C7'
IP 3.1.02
l

KRASNAYA, A.R.; NOSENKO, B.M.; REVZIN, L.S.; YASKOLKO, V.Ya.
Exoelectronic emissicn cf CaSO-Ma,, eLnd Ca-SO 4-Sm phosphors,
Opt. i spektr. 7 no.4:526-529 Ap 162. MRA 15--5)
(Electrons-Emissicn) (Phosphors)

37224
s/o5l/62/012/004/012/015
E039/E485
AUTTIORS: Krasnayn, A.R., Nosenko, B.M,, Revzin, L.S.,
Yaskolko. V.Y
. Lij-Q-
TITLE: On the exoelectronic emission of the phost)hors
CaS04, CaSO11 - Mn, CaSOi, - Sm
PZRIODICAL: Optika i spektroskopiya, v.12, no.4, 1962, 526-528
TEXT- Earlier work orf this subject is reviewed and the results
shown to lack agreement. An investigation of the exoemission Of
the phosphors CaS01k, CaS01, - Ma and CaSO4 - Sm was therefore
undertaken. The apparatus used and method of measurenent are
described briefly. The phosphors ifere.excited'by a Sr9o
0 source and the results are.shown graphically; exoemission
plotted against temperature for each phosphor. The exoemission
for CaS04 -Mn has two peaks with maxima at 100 and 14110C, while
the thermo-luminescence curve shows only one peak. CaSO4 has
only one peak on its exoemission curve with a maximum at 1340C.
I-Then MLLn is added, new capture centres are formed and the general
intensity of emission �s increased. In the case Of CaS04- Sa
exoemission is not observed while its thermoluminescence curve
Card 1/3

S/051/62/012/004/012/015
On the exoelectronic ... E039/E485
shows three peaks. This shows that exoemission from CaSOi, is
strongly influenced by the activator and that there is no
correspondence between thermoluminescence and exoemission. The
difference between these results and those of earlier workers
appears.to be due to differences in the method of preparation of
the phosphors. The results are compared with a model suggested
by,A. Bogun and it is shown that the absence of a second peak in
the' thermol-uminescence curve for CaSO4 -.Mn can only be explained on
the ba!;is of the temperature of quenching (luminescence). In
CaS04- Mn this occurs at 2000C. The full suppression of
exoemission, by Sm requires the assumption of pure hole
characteristics for the lum1nescence of CaSO4 -Sm on this model
which is contrary to the results obtained. The effect of
electron diffusion length is also discussed. It is concluded
that exoemission is due mainly to defects in the non-luminescent
surface layers while the thermoluminescence is due to defects in
tii~,6 volume of the crystal. Further experiments are required'for
the verification of these results. It is suggested that the
Card'2/3

S/051/62/012/004/03.2/015
On the exoelectronic ... E039/E485
method is a valuable orie for the study of the surface layers
of crystals. There is 1 figure.
SUBMITTED: September 26, 1961
Card 3/3

KRASNAYAq A.R.; YASKOLKO, V.Ya.
Effect of various activators on the exoelect-ronic enission. from
CaF4. Nauch. trudy,TashGu no.221. Fiz. nauki no.21:nr-81
163. (MIRA 17:4)

`]ACCESSION NR: AR4032174 S/0058/64/000/002/DO55/DOSS
SOURCE: Ref. zh..,Fiz., Abs. 2D434
AUTHORS: Kulakova, S. N.; Yaskolko, V. Y,a.
TITLE: Thermoluminescence of CaSO Mn, CaSO sm, and CaSO Mn,Sm
4* 4* 40
CITED SOURCE: Naucbn. tr. Tashkentsk. un-t, vy*p. 221, 1963, 82-83
TOPIC TAGS: thermoluminescence, calcium sulfate manganese phosphor,
calcium sulfate samarium phosphor,, light sum, temperature maximum,
activator concentration
TRANSLATION: The authors investigated the concentration dependence
of the positions of the temperature maxima of.the light sums ind
thermoluminescence spectra of the crystal phosphors CaSO Jin,
4
CaSO Sn, and CaSO Mn,Sn excited by particles-from Sr and by
4 4
Card 1/2

ACCESSION NR: AR4032174
x-rays. The concentration-of the activators varied from 0.0001 to
1 mol. %. T. Razumova.
DATE ACQ: 3lMar64 :SUB CODE: PH ENCL: 00
Card 2/2
IN
C~i

ACCESSION NR: AR4032175 S/0058/64/000/002/DOSS/DO55
SOURCE: Ref. zh. Fiz., Abs. 2D435
AUTHORS: Nosenko, B. M.1 Yaskolko, V. Ya~
1"TITLE: Interaction of the activators Mn Iand Sm in CaSO4
;.CITED SOURCE; Nauchn. tr. Tashkentsk. un-t, vy*p. 221, 1963, 97-99 1
TOPIC TAGS: thermoluminescence, calcium sulfate manganese pbosphqr.,,
calcium sulfate samarium phosphor, two activator phosphor, glow can-
ter, capture center, prior irradiation effect
TRANSLATION: The authors measured in the 20-3000C the thermolu-
minescence,M) oi the phosphors CaSO Mn,.CaSO Sm, and CaSO 14n,Sm,:----
C 40 4*
:.which glow under the influence of visible light, and the effect on
TL due to-prior irradiatiorx,of the phosphor with a large dose of
ionizing radiation, it is established that some fraction of "foreigr~
Card
1/2

-ACCESSION NR: AR4032175
'glow is present in each band of the TL of the two-activator phosphor,f
indicating transfer of energy fiom the Sm capture center to the Mn
.0
.glow -center, and to a greater degree from the Mn capt,ire center t
!the Sm glow center. From an investigation of the exciting action
':of-the light it is established that the absorption center for the
~vizible light is connected with a definite capture center and a
iglow center.
DATE ACQ:- 31Mar64 SUB CODE: PH. ENCL: 00
Card 2/2

KRASNAYA, A.R.; RFVZIN, L.S.; YASKOLKO, V.Ya,
Preparation of phosphors on the basis of CaS04- Rauch. trudy-
TaahGu no.221,Fiz. nauki no.21:71-78 163. (MIRA 17:4)
- - ---------

NOSENKO, B.M.; YASKOLKO, V.Ya.'
Rela iion between recombination luminescence-and exoelectronic
emission. Nauch. trudy TashGu, no.221.Fiz. nauki no.2104-96
163.
inter'~action of the Mn and Sm activators in CaSO4. Ibid.:97-99
(MMA 17W

REMN) L.S.- YASKOLK(it V.ya.
ftrudy TashGU
ctUre Of' Fhosphor-3 On the Oasis Of Cav:'04, Haucl--
no.2c'2 Kz. nauki no.22:71-75. 164.

in r
l
of Ca~`;04.~, TaiihGTJ no.262 Flz. nauki r.0.222
A.

KRASNAYA, A.R.) NOISENKO, B.Vj.~ YASKOLKO, V.Ya.
Exoelectronla, eaisitcn from Ce Oj-baBed phos-ors. --1z--. A.N Z-.-2;:~
Ser.fiz. 29 noJW-34-485 Mr 165. (w"Tv~ 18.4)
1. Kafedra optikl. TashKentskogo gosudarstvennogo unlverslte,~a
im. M.Lenina.
Y4

WE (1) Pi-4 IJP(c)
ACCEMION NR: AP5009151 s/0.166/65/ooo/oo:L/Ooft/008!~
AUMOR: Kra,smyay A. H.; Hosenko, B. M.; ~askolkoq V. Ya. 13
TITLE.- Exoelectronic emission of phoghors b sed on calcium sulfate
sw=: AN UzSSR. Izvestlya. Seriya fiziko-matematicheakikh nauk, no. 1, 1965,
81-85
TOPIC TAGS: exoelectronic emission, thermolumineacence, activated phosphor, cal-
cium compound,, electron trap, activation center
ABSTRACT.- In view of the lack of a unified point of view concerning the nature of
exoelectronic emission (EE), the authors extended their earlier studies of therm-0-
stimulated EE and thermoluminescence (TL) of phosphors based on CaSO4 (optika i
spektroskopiya, 9b. 1, Lyuninestsentoiya, 1963, p. 223; Trudy TashGU, fiz. 1963,
no. 22i, 84; Izv. All SSSR ser. fiz. 1962, v. 26, 459, no. 4) with an ILiM at ascer-
taining whether the same electron traps are responsible for both phenomena. The
results indicate that the capture centers of EE and T1. are different, although both
are formed witb participation of tho activator. It to Impossible to ascribe the EZ
kard
MMVM~ FIR
'g
.-'~74_1;P Zr~'

ACCESSXON IM AP5009151
phenomenon to a recombination mechanism. Manganese can penetrate into the CaSO4
lattice in at least three ma.-mers, two of which are responsible for tte EE and TL
capture centers. The EE capture centers are preferentially produced, but when the
Mn, concentration is large, only a small fraction of the Mn pexticipatca in the pro-
duction of these centers. Sm has a tendency to penetrate alongside the 14n. The
EE is produced in the surface layer not thickcr than 370 1. Orig. art. has: 1
figure and 4 tables.
-ASSOCrATIONt-- -Tashkentakiy. gosuniver-sitet. im. V,---I,,..Leniv-a -(Th
shkent State Univer-
T
suwwrm: 13jun64 ENCL: 00 OB CODE.- OP, SS
HR REF S07i 003
OIM: 007

(M-
ACC NRt AP6001659 SOURCE CODE: UR/665i/6576-i~i/006/0980/0982
ac,
AUTHOR: Nosenko, B. M.; Revzin, L. S,; Yaskolko, V. Ya.
f
ORG: None
TITLE: Determination of some parameters of beta-particle tracks In CaSO4-Mn
SOURCE: Optika I spektroskopiya, v. 19, no. 6, 1965, 980-982
TOPIC TAGS: beta particle, luminescent material, luminescence
ABSTRACT: The authors note that when a luminescent material is excited by ionizing
radiation, the true density is not the mean density of excitation, but the excita-
tion density Iin the track (the quantity of ionized energy losses per unit of track
volume). However., the establishment of the true density entails the difficulty of
determining the track volume. For this reason, the authors propose a method of
estimating the excitation density in the track which does not require a knowledge of
the track volume and which makes use only of luminescence experiments. The method
described is based on the fact that there is always a certain overlapping of the
branches of a beta-particle track and, consequently, an increase in the mean excita-
tion density in the track. It is shown that the mean excitation dennity in the
track of a beta-particle is equal to the effective density of cathode excitation
(in the same luminescent material) when the value of the relative storage is g = go .
The dependence of the relative storage factor on the density of cathode excitation
is studied for CaSO4-Mn (I mol. Orig. art. has: 5 formulas.
1 Card 1/2 UDC: 535.373.1:548.0
C7

".
~ IL 11915-66

-7 L- 213328,;-,6&----V1T
AP6013080 SOURCE CODE: UR/0048/66/030/004/0681/0683
Krannnya, A.R.; ~Tosenkos B.M.; Yaskolko, V.Ya.0- Sokolov$ G-V#
OW: Tanhlwnt State University im. Lonin (Taahltontskiy gosudarotvonnYy.univorsAtot)
TITLE:. Parallel investigation of the luminescence.and exoelectronic emission of
Caso :mn rReport, Fourteenth Conference on Luminescence hold in Riga 16-23 September
SOURCE: AN SSSR- Izveotiya, Sariya fizichaskaya, V. 30, no. 4j 1900, 681-683
TOPIC TAGS; crystal phosphor, luminescence, calcium sulfate,. electron emisdion,
thermoluminescence, beta radiation
ABSTRACT: For the pqrpose of clarifying the mechanism of exodlectronic emission the
dissipationwith time of the stor of -Me stored lixt -SUM S, was
.Sd emission sum S, and
investigated at constant temperatUre. Then the storage curves were converted to decay
curves by differentiation with reipect to time. The experiments were carried out on
CnS04:Mn (0.1'mole percent) phosphor at fixed temperatures in the range from 20 to
600C. The phosphor was excited by P-particles from an Sr9o source. The results are
presented in the figuro6 Similar curves were obtained at other temperatures in the
20 to 500 ran'ge. The Securve for CaSO4:M n is rather distinctive: it exhibits an
inflexion point, so that the 1. curve has a distinct maximum. The afteremission curve
Card 1/2

7 L- ZUUU-bb -- - - - - _- .- -- -7-1 1 --- -- -- - - - - -- - -- - -
AICC Ms APS013080
f0
F1 ure'caption* a - time variation of loss of the
9
Sl at 40OC; deduced
emission sun do and the light at=
variation of the aftoromission 10 and afterglow II,
b b - curves for 1. and 11 obtained in preliminary
experiments employing a now vaouun setup.
m n--~~ is reminiscent of curves characterizing the build-up
4J bf the daughter-nucll e in radioactive decays.
a, Accordingly, it is hypothesized that in the case of
a
IN caso4:Mn (in which different centers are involved in
'the exoelectronic.em"sion and in.the luminescence),
in analogy with radioactive decay, the surface centers
-emitting the exoelectrons from as a result of dis-
integration'of the it primfiry" trapping centers. An
Pour
;analytic expression for 10 is adduced; this is con-
sistent, with. the experimental results. To eliminate, some of the shortcomings of the
experimoi~tA - involving measurements Of 3 1 there was designed and assembled a more
sophisticatedIvacuum setup for direct measurements of Is and I,. The results of pro-
liminary (test) experiments' employing the now setup are shown in figure b. The agree-
i ment with the earlier results is only qualitative, the possible reasons for the dis-
parity are discussed. Orig. art..has: 41formulas and 2 figures.
SUB CCDS: 20/ SUBM DATS: -.00/- ORIG REFt 005/ CTH REP: 004

KRASNAYAP A.R.; NOSENKO, B.M.;,YASKOLKO, V.Ya.
Exoelectronic emission of phosphors on a caso base. TZ-,/. A?J'
Uz. 3SR. Ser. fiz.-mat. nauk 9 no.1;81-85 45. (MIRA ~18,6)
l..Tashkentskiy gosudarstvennvy univeraitet Imeni Lenina.
E,

now
W1
SKONIS~ J.j red KANOPKAITE-ROZGIENE) S., red.; MEiMS, A., red.;
D... red.; BARTUSEVICIUS, V.., tekhn. red.
(Problems of physiology and biochemistry; a fectschrift In
honor of the 70th birthday of Professor VI.Lasas, 1,1,.D.,
Corresponding Member of the Academy of Medicine of the
Lithuanian S 6 R Member of the Academy of Sciences of the
Lithuanian S:8:R:jFizio1ogijos ir biochemijoa klausimai;
TSRS Medicinos mokslu akademijos nario korespondento, Lietuvos
TSR Moks2u akader-ijos akademiko, medicinos mokslu daktaro,
profesoriaus VI.Laso 70 iretu sukakciai pamineti. Vilnius, 1962.
274 p. OQT-A 15:9)
1. Lietuvos TSR Mokslu akademija, Vilna. Botanikos institutas.
(PBYSIOLOCE) (LASAS, VLADAS, 1892- ) (BIOGIEIMIS-Ila)

MATYUSIIIN, I.F.,- YASKORSKITY, A.A.
- I
Ourg"41 treatmW 3--.art block utilizing the- aurfcular
appendage as the con4Raor of the cardiac impulsee -J'n An &xpeA-
ment; a prel-iminaifTeport. Uch. trudy GMI no.192300,-3(P- 165,
(FJRA
1. 1z kafedry operatimoy khirurgii Gorlkovskogo gosudarsvenn~-gj
meditsinskogo instituta imeni S.M.M.rova.

AYZENVARG, Khaim Vollfovich; POSTNIKOV, S.A., inzh.,, reteenzent-
,-)Lkul P-Y,.-.A.A.: inzh.p retsenzent; RZHMHITSKIYt B.D..
inzh., redj -KA11, P.M.., red.
(Textbook for electric harbor crane operators] Uchabnik
kranovshchiku portallnogo alektriebeskogo krana. Izd.2,,
ispr. i dop. Moskva., Transport, 1964. 241 p.
(MIRA 17t:L2)

86133
S/112/59/000/012/074/097
L11 2~0 0,0o I'mi S" J/P~ A052/AG01
Translation from: Referativnyy zhurnal, Elektrotekhnika, 1959, No, 12, p. 21~,
25381
AUTHOR: Yas'kov, D.A.
TITLE, Methods of Calculation of Semiconductor Igniters for Ignitron
Amplifiers
PERIODICAL: Izv. Leningr. elektrotekhn. in-ta, 1957, No. 31, PP. 174-187
TEXT:. Mathematical expressions are derived which enable one to find quick-
ly the principal dimensions and configuratfon"of an igniter satisfying the given
electric characteristics or to determine the values of the principal parameters
of ipition if the dimensions and configuration of the igniter are given. The
method of calculating igniters for Ignitrons qas tested on large lots, and a
satisfactory coincidence of calculated and experimental data was obtained. It
was established that the cathode spot on the surface of Hg was caused by contact
phenomena. One of the Most important factors determini6g the appearance of the
Card 1/2

86133
S/112/59/000/012/074/097
A052/AO01
Methods of Calculation.of Semiconductor Igniters for Ignitron Amp1,1fier5
cathode spot is securing the maximum electric field intensity along the igniter on
the level of its submersion into Hg. For this purpose the current passing through
the igniter must change with the diameter according to the square trinomial law,
There are 3 references.
D.L.K.
Translator's note: This is the full translation of the original Russian abstract.
Card'2/2

'13 24
AUTHOR: Yaslkov, D.A.
23
~/01194/61/000/007/039/079
D201/D305
TITIZ: Semiconductor theriiio-resistors based on silicon and
boron carbide
PERIODICAL: Referativnyy zhurnal. Avtomatika i radioelektronika,
no. 71 1961p 18, abstract 7 D123 (Izv. Lei-dngr.
elektrotekhn. in-ta, 1960, no. 43, 112-124)
TEXT: The mass produced industrial thermo-resistors TP (TR)
type 1114T have a resistance temperature coefficient at R equal to
0.024 - 0.034 per degree C. It is impossible, therefore, to com-
pensate for the temperature errors of instruments, especially low-
resistance, by the direct connection of 12.rr into the compensating
network. It is rational to use TRIa made of materials havincr ac
0 R t/
ne ar t o (XV of metals in its absolute value, but of opi)osite
sign. Tests have been made with low resistance TR's based on semi-
conductors: oxides of Cu, 11n, Col Ti; carbides of Si, B and SiC in
Card 1/3

30123
S/194/61/000/007/039/079
Semiconductor thermo-resistors... D201/D305
B4C being semiconductors with a R nearect to LXF of metals have
had their TR fully investigated using iui industrial grade of SiC
(made in USSR); in the positive range of temperatures they exhibit
DLR approximately half as small as OLR of metals. The increase
Of 01R Of such TR is possible when a high purity SiC is used. With
B4C it is possible to obtain low-resistance TRIG, ;Ath which it is
easy to compensate temperature errors of accurate instrments. The
characteristics of B4C TR depend to a great extent on technological
factors. This is why, by varying the parameters of technological
processes, it is possible to control within certain limits, the Tit
properties. The change of the B4C TR i-rith temperature follows an,
exponential law. The slope of the exponential is, however, very
small, which makes it possible to obtain quite an adequate compensa-
tion of a nepxly linear temperature resistance change of metals.
The characteristics of B4C TRIs are very stable vith time, at abru.-A
changes of temperature and at long periods of e-.-,posure to Iwuddity.
The technology of production of low-resistance TRIs is comDarativaly
Card 2/3

0
12
S/194 61/000/007/039/079
Semiconductor thermo-resistors... D201 305
simple, does not require complex equipment and enables the mass
production of these products. Z-A~stracter's note: Complete trans-
lation-7

89810
S/110/61/000/002/oo6/oog
E194/E455
AUTHOR: Candidate of Technical Sciences
TITLE: A Standard High-Voltage Compressed-Gas Capacitor
for an Operating Voltage of 250 kV
PERIODICAL: Vestnik elektropromyshlennosti, 1961, No,2, PP.51-53
TEXT: Bridges for measuring the olectrical properties of
insulation at high voltage require standard capacitors. The
technical requirements applicable to such standard capacitors are
best met by air capacitors. The size may be made much smaller if
compressed gas is used. The construction described in this
article is illustrated schematically in Fig.l. The high-voltage
insulator serves as a gas container and on the top of it is
mounted the high-voltage terminal and electrode. The
electrodes are contained in an impermeable paper-bakelite cylinder
1400 mm long. The inner low-voltage electrode and the high-voltage
electrode are copper cylinders. The construction.is described in
some detail. The capacitor is filled with nitrogen at a pressure
of 12 atm. A gas pressure valve is provided. The capacitor is
mounted on a trolley. The following data are given.
Card 1/3

89810
s/ilo/61/000/002/006/009
A Standard High-Voltage ... E194/E455
Capacitance picofarads 57.00; test voltage kV effective
(5 minutes) 300; loss angle (at 250 kV) less than 10-4;
temperature coefficient of capacitance 30 x 10-6 per 0c;
overall height mm 1600; and trolley size mm 600 x 600,
The electrical characteristics are independent of voltage up to
the working limit and prototype capacitors have successfully
withstood acceptance tests and are in service, There are
3 figures,
SUBMITTED: February 15, 1960
Card 2/3

A Standard High-Voltage ...
89810
s/110/61/000/002/oo6/oog
E194/E455

L 155311-63 EPRIM(e)IDIP (q) IEWT (M) /kS (v)/EDS,:, AFFTC/ASD Ps-wh/Pr_V
Pe-4 -
ACCESSION NR:', AP3004913 _-S/0120163/0001004 0
176/0180
go ,
;AUTHOR: Pichugin; I. G.; Tairov, Yu. M.; Y-astkovi D. A..'
TITLE: Preparing sillcOnlicarbidiv
crystals
'SOURCE:, Pribory*i tekhnika eksperimenta, no,~4, 1963i.,176-180
TOPIC. TAGS: -solicon, carbide, - crystal, SiClv'crystal growing
IABSTRACT! An,outfit is described, that permits developing a temperature of
about 2, 500C in a 500-crn3 crucible containing 10'4 -torr-vacuum a d an inert gasj
The cons truction,.. including an'electrically-heated graphite block set of
ternperatur e -distributing screens, a. water-cooled stainless.steel housing, a set
of electrodes, a vacuumizing system,' etc. , to described in detail;'a structural
drawing atda photo of its general appearance are pronented. The avora*ge outpitt
is 50.SiC crystals~5_7-rnm thick (with 6-7hrs growing time), in one crucible.
Intended for semiconductor devices, the crystals have a carrier concentration of
Card, -1 Z_
M K.A

-~5 v,

L '0200-j-.q:5 BIG k j )/EPA (s ) --2/EWT(m)/F PF (o)/EPF (n) -2/EWG(v)APR/EPji W-2/Ewp (j W
(e) Po-4/Pe-!5/Pr-4/Ps-4/Pt-IO/Pu-4/Pab-10 AS (mjV)_2/RAj3M(e)/F'AMA(0/
'.ESD(9S)/E$D(t) J DjtiV/J q1P. /4 1 H
JACCESSION NR'.- AP4046'4TT S/0032/64/0301010/12T6/1278
Yas1kov, D
rAUTHOR: Pichugin, 1, G.; Tairov, Yu. M.,
?TITLE. Laboratory 'vacuum futnace vith automatic control for growing
.~sillcOn carbida crystals
ev, -1278
0
!SOURCE, s.aya.laboratoriys., v. 30,.no.:10 19614, 1276
TOPIC TAGS4 silicon carbide -o.rystal, -singl e crystal growth, electric
--vacuum furnace
automatic temperature control, heat insulation cor-
irectio,nt-semiconductor.silicon carbide
:ABSTRACT, Automatic temperature control and a procedure for correction
of heat insulation and for changing the temperature gradient in the
Aelectric vacuum furnace have been developed to secure growth of per-
ofeet silicon carbide crystals for semiconductor devices. The furnace
was described by the authors in Pribory*i tekhnika eksperimenta, no
14, 1963. The automatic temperature control was based on measure-
ment of the ratio of the luminous flux from the heater to that from
In calibrated-source. The filtered light signals from bcth sources
j C'rd.

L 12000~~.
ACCESSION NR: Ap4o4.64-77
J.
-ivere received.on an antimony-eesium photoelectric cell and then am-
-.1plified and:detected in:tht-,same circuit. Different aignals Uom
~__~_itwo sources set in motion a mechanism which automatically changes the
;input voltage and hence resets the temperature of the heater to a
predetermined value. Deviation from the predetermined va.lue in the
~2300-2600C range was plus or minus 3C maximum. The temperature
gradient in the furnace was Improved by/1) changing the aumber and
location of horizontal heat-insulating~%hielda and 2) varying the
current input according to the changing temperature profile of the
!heater. Correction of beat insulation was achieved by solving the
idifferential equation describing the distribution of heat. flow in the
f_urn-%c:e--on 5-7' mm in dia-
----vere--,grovn-on-- a-&jjphit-e- -d"phragm'. -,---Or;L-6. art-,I _f1-gures__-
m et er
formulas,
'ASSOCIATION: Leningradskiy elektrotekhnicheskiy institut (Leningrad
Electrotechnical Institute)
SUB14ITTED:_ 06:_ -~ATD PRESS-: -3120 BNCL., 00
SUB CODE; 'IE, S,9 NO REF 60V:1 00A. OTHER% 001
Card
~T;-,

L 15821-66 SWF(e) /DJT(m) /ETC (f)/M(m)/T/E:WP(t)/EWP(b) IJ P (c) 011WIXIATAII
Acc NR: AT6002252 SOURCE CODE; UR/2564/65/006/000/0206/0209
AUTHOR:
Yas1kov, _D._A.
ORG: None
TITLE- Conditions of growth of silicon carbide crystals on alTIphite diaphragm
-.].~a er presented at the Third Conference on Crystal Growing held In Mosc(M, from 18 to
qR Wn--tT.-=C-"'1Vgq
SOURCE: AN SSSR. Institut kristallografit. Rost kristallov, v. 6, 1965, 206-209
TOPIC TAGS: crystal growing, silicon carbide, graphite, crystal structure
f
ABSTRACT: ~illcon carbide crystals were grown from the vapor phase by sublimation of
a polycrystalline mass of SIC at 2300 - 2600C, followed by crystallization in the form of
plates in a region of lower temperatures (niethod due to J, A. Lely). Fig. 1 shows the
crucible employed and Its position relative to the heater. Its main features tire a graphite
Card 1/3

i5821-6_6
ACC NR: AT6002252
container 1 tightly sealed with lid 2, and a graphite diaphragm 3 with staggered radial
apertures on Its surface. The space between the diaphram and the wall of the container is
filled with the starting material, I. e., commercial or synthesized silicon carbide. In
order to obtain SIC crystals that are homogeneous in structure and suitable for applications
in semiconductor technology, a number of conditions must be provided during the growth:
(1) Very definite temperature gradients must be created along the axis of the diaphragm
(the thermal field pattern was obtained by calculation); (2) The temperature of the heater
must be kept rigorously constant during the entire period of crystal growth (particularly
when graphite screens are used as thermal insulation); (3) All steps should be taken to
eliminate the penetration of Impurities into the zone of crystal growth. Data from x-ray
and spectral analyses of crystals obtained under various conditions and results of studies
of their electric properties will be published In a future paper. Orig, art. has: 3 figures,
SUB CODE: 20/ SUBM DATE: none/ ORIG REP: 001/ OTH REP: 001
Pard 3/1

L 34044-66 EW(1)1EWr(m)1T1EW(t)1E?1 IJP(c) JD/GO/GD
ACC NRI AT6013568 SOURCE CODE: UR/0000/65/000/000/0309/03ii~_
AUTHOR: P I chnin"-9, ; Sm_i_rn_oya__,_ N _.A Tairov,.Tu. H.. Yaslkov,_D. A.
Z rlfr"V/#V~'
Ullyanov.(Leningradekly slektrotekhni-
ORGi Leping rotechnical Institute 1m.A
choskiy institut)
TITLE: The effect of certain factors on growth and formation of Sic crystals &
SOURCE: AN UkrSSR. Institut problem materialovedenlya. Vyflokotemperatumyye neorga-
nicheakiyeacyadinentya (High temperature Inorganic compounds). Kiev, Naukova dwks,
196S, 309-314
TOPIC iAGS: silicon carbide, single crystal growth, *;mt; crystal growing
ABSTRAM The growing process Sic crystals was studied in the 23500-~5000C range in
a ID
an argon atmosphere. Before sublimation, the Sic raw material was deg ssed at 200 C
and 1-10-5 mm Hg. The crystal growing duration was 6-12 hours. Best quality Sic
tals were obtained using a two-diaphragm crucible. The distance between diaphragms
could be varied from 0.5 to 6 mm. It was found that the optimm conditions for growing
high 'quality, homogeneous SIC crystals 6-8 mm in diameter (with an average defect den-
sity 2f 200 ca-2 and with a large proportion of crystals with defect density less than
30 cm 2) aret an axial and radial temperature variation In the crucible maximum 1506C'
heating from 20000C to the desired process temperature at a rate not lower than 200/
1/2

:L 15947-66 EW, /S%T(t I /EirTf b) !JP(,'~) Jlj/,TG
ACC NR: AT6002255 SOURCE CODE: UR/2564/6.5/006/000/0,:34/0238
W
AUTHOR: Illin, Yu. L.;-,Yas1kov, D. A.
ORG: None
TITLE- Methods of preparation of gallium phosphide crystals (Paper presented at the
Third Conference on Crystal Growi-ng--he-R in -Aloscow from 18 to 25 November, _IL6
SOURCE: AN SSSR. Institut ]at stall ografi I. Rost kristallo-7, v. 6, 1965, 234-238
TOPIC TAGS: crystal growing, gallium compound, phosphide
ABSTRACT: Gallium phosphide crystals were grown from a solution-melt containin
9
gallium metal as the solvent, and also from the gas phase. In the solution-melt method,
the crystal growth was found to be substantially affected by the temperature conditions.
The optimum temperature of the reaction zone is 1150C, and the corresponding tempera-
ture of evaporation of phosphorus is 410C. In experiments with the gas phase, the
crystals were obtained by a chemical reaction between phosphorus and gallium suboxide
vapors. The crystal growth process was found to be substantially dependent on the
evaporation temperature of the phosphorus and gallium suboxide, and on the degree of
cooling, The temperature in the phosphorus evaporation zone should be 410C, In the
Card 1/2

SIM
FAOO Arili!nnl)c)rc

L 25460-
ACC NRs
AUTHOR:
ORG: Lei
E1VT(1)/9V1T(m
/Etc (f-)/EWG(M)AVIP (e)
SOURCE CODE: UR/02
Kallnin, A. A.; Tairov, Yu. M.; Yaslkov, D. A.
TITLE: Luminescence of silicon carbi vith_jegllium impurity
SOURCE: Fizika tverdod6ltelap vo 8) no, 3., 1966, 94&951
TOPIC TAGS: silicon carbide, beryllium, semiconductor impurityp lvninescence, lumi-
nescence center, activated crystal, pn junction, volt ampere characteristic, electro-
luminescence
ABSTRACT: The purpose of the investigation was to confim\p=erimentally that It is
possible to use certain elements of group II an luminescenceN~activatojs ip silicon
carbide c2-jotals. Some of the advantages of using beryllium as the doping impurity
are briefly discussed. Luminescent p-n junctions were produced by introducing beryl-
lium in silicon carbide containing 8 x 1017~--5 x 1018 WCO nitrogen as the luminei-~_.
cence coactivutor, The procedure and apparatus for preparing the junctions are brief:
1y described. The resultant junctions had a volt-ampere characteristic featuring a
large drop in the forward direction. In addition to the volt-ampere characteristic.,
the clectroluminescence #Tjqt2~kand the lumen-ampere characteristics of the junction
presented. The results show that the electroluminescence of tho obtained P-n
junctions cannot be connected with the presence of boronp and can be attributed to
Card -3/2

L 09918 r67 na (m /E tJATI DJJQ
) ~ _WEL
CC N11, AP6033560 SOURCE CODE: IJR/0181/66/008/010/2982/2985
AUTHOR: Kqllnin.._ A. A.; 11asynkov, V. V. ; Tairov, Yu. M. ; Yas1kov, D. A.
ORG: Lcninp~o_,Kje~rotechnical Institute im. V. I. UP y~~nov -(Lenin) (Leningrad-
skiy electrotekhnicheskiy institut)
TITLE: Photoluminescence of silicon carbide containing a beryllium impurity
SOURCE: Fizika tverdogo tela, v. 8, no. 10, 1966, 298?-2985
TOPIC TAGS: photoluminescence, silicon carbide, beryllium, impurity,
luminescence extinction, electron hole, luminescence
ABSTRACT: Beryllium when added to silicon carbide is shown to render the latter
luminescent. Both electron- and p-type-Silicon carbide samples were found to
luminesce. At the same time, the spectral radiation composition was found to vary.
The activation energy required for the extinction of luminescence for electron- and
P-type silicon carbide samples is about the same (approximately 0. 32 ev). Electro-
luminescent light sources were prepared in which electrons were injected into
luminescent p-type silicon carbide samples. Orig. art. has: 3 figures. [Authors'
abstract]
SUB CODE: 20./SUBM DATE: 16Mar66/ORIG REF: 005/OTH REF: 006/

-,ACC NRs Ar6036784 SOURCE CODE; UR/0363/66/002/011/1939/1943
A CR: 111in, Yu. L.; Sorokin, V. S.; Yas1kov, D. A.
CRG; Leningrad Electrotochnioal Institute im. V. 1. Ullyanov (Lonin)
(Ianingradskiy elektrotekhnicheskiy institut)
TITLE: The offoot of some faotors on tho procons of formation And growth of gallium
phosphide. ingots
SOURCE. AN SSSR. Izvestiya. Neorganichaskiye materially, v. 2, no. !1, 1966,
1939-1543
TOPIC TAGS: gallium compound, phosphide, semiconductor crystal
ABSMACT; In the production of gallium phosphide by the method of horizonlEal zone
melting, the controlling parameters are -the temperature of the zone of high frequency
heating, the vapor pressure of phosphorus in the working ampoule, and the rate of its
displacement through the high temperature zone. In the experiments, the temperature
of the zone of high frequency heating was varied from 14oo-i6oo0c, in steps of 300
each. At each value of the temperature, the vapor pressure of phosphorus in the
working ampoule was varied from 0.1 to 20 atm. In turn, for each value of the
temperature and phosphorus vapor pressure, the rate of displacement of the working
ampoule through the high temperature zone was varied from 0.1 to 2.6 =/min. Zia
12 uDcs 546.681,18m;Qi.

ACC NRt
AP6036784
structure of the ingots obtained is illustrated in the article by a series of
microphotos. The following conclusions were drawn: 1) to obtain ingots of gallium
phosphide.which do not contain inclusions of gallium, certain conditions must be
observed, the most important of which are the temperature in the zone of high
frequency heating, the vapor pressure of phosphorus in the working .,ipoule, and the
rate of displacement of the ampoule. Dense ingots of gallium phosphide of
sufficiently large dimensions can be produced at a temperature in the heating zone not
..below i5400C, a vapor pressure of phosphorus of 12 atm, and a rate of growth of the
ordar of 1.3 mm/min; 2) the size of the monocrystalline blocks and ingots of ga3.liu,-a
phosphide is determined by the thermal conditions in the growth zone, and depends on
the form of the crystallization front; 3) use of an inductor of special form makes it
possible to vary the form of the crystallization front and to obtain monocrystalline
blocks and ingots suitable for use in the semiconductor industry. Orig. axt. has:
6 figures#
SUB CODE: 11, 20/ Sum DATFs '~movW cRiG REF& 001
--7- -71~
T

ACC NR; A?'/008523 SOUA-W~: COD"': Ui~/0--36j/67/cO3/002/0"9(')/0299
AUTHOR: Il'in, Yu. L., Yas`kaU_P~.
03G: Loningrad Eloctrotochnical Instituto (Loningradskiy olcktrotckhnichc3kiy
institut)
TITLE: Synthesis of gallium phosphide by zone melting under pressure
SOURCE: AN SSSR. Izvestiya. Neorganichoskiyo materialy, V. 3, no. 2, 1967, 296-zgg
TOPIC TAGS: gallium ec=Po-und, phosDhide, zone melting
ABSTRACT; A technique-for syrrthesizi.ng gallium Dhosphide by zone melting under argon
at 5 Am is described which makes it -possible to grow ingots having dimensions of
single crystal blocks up to 10x8x3 Since'tho most crucial step in the technolo-
gical nrocoss of synthesis of gallium,phosr,aide are the temperature conditions of zone
molting, it is necessary to have close control over the temperature in the melt zone,
iand also over the pressure of phosphorus in the working ampoule. The content of im-
purities in gallium nhoSDhide and their distribution over the length of the ingot de-
-aend on the number o~ pas'ses through the zone. The main source of impurities, -oarti-
cularly silicon, is quartz. The synthesized and zone-refined gallium phosphide had a
:free charge carrier concentration of about 5 x 1017 cm-3, and a hole mobility at room
temperature of about 60 CM2/11 see. Orig. art.-has; 2 figures.
SUB CODE: 0?/ SUBM DiVIM 01Nov65/ ORIG REF: 003/ OTH REF: 001
Card UDC:*__54,6 1.,18 54'2.9L

ACC NR: AP7005337 SOURCE CODE: UR/o18l/6VO0q/ool/Ol45/O149
AUVOR: Pikhtin, A. N.; Yaslkorv,,-D. A.
ORG: Leningrad Electrotechnical Institute im. V. I. Ullyanov (Lenin) (Laningradskiy
elektrotekhnicheskiy institut)
TITLE: Dispersion of the refractive index of light in gallium phosphide
SOURCE: Fizika tve rdogo,tela, v. 9, no. 1, 1967, 145-149
TOMC TAGS: gallium phosphide, light dispersion, refractive index, light reflection,
laser optic material
ABSTRACT: In view of the lack of detailed data on this subject, and of the impor-
tance of GaP as an injection-laser material, the authors study in detail the re-
fraction of light in this substance and present an analytic expression with vhich
the refractive index can be determined over a wide range of photon energies (1.0
2-35 ev) and for different temperatures (80 - 290K). The theoretical formula was
derived from the dispersion relations. The experiments consisted of absolute mea-
surements of the specular-reflection coefficient of polished n- and p-type Gap
plates and determining the refractive index by measuring the angle of least deflec-
tion of the radiation by a prism made of the investigated GaP. The test procedures
are described briefly. The refractive index drops from an approximate value of 3A
at 2.5 ev to 2.006 at 290K and 2.983 at 80K at zero photon energy. The temperature
-(-5 x 10-4) ev/'K at 290K. Orig- art- has:
coefficient of therefractive index is
Card 1/2 UDC: none
---- ----- -
_e

ACC NRz PX7005337
3 figures, 9 formulaB., &M 1 Uble-
SUB CODE: 20/ SM DATE: 04jUrA66/ ORI(; REF: oo4/ OM REF: 007
ATD PRESS: 5116
Card 2/2
(021

L 14157-66 EWA(h)/EWP(J)/EWT(m)/EWA(1) RM/JK
ACC nR: AP6001311 SOURCE CODE: UR/0248/651000/009/0018/0022
AUT11OR! Jv4M1Jk,_L. 1L. ; Klipson _ N. kt; Mamedova, T. G..; Ryabchenko, N. I.*
-Sklobovskaya, M. V.; Yaskevich, A. G.
ORG: Institute of Medical Radiology, AM14 SSSR, Obninsk (Institut meditsinskoy
radiologli AFW SR)
TITLE: Molecular mechanisms underlying_radiat_ion-induced cytogenetic injurie
SOURCE: AMN SSSR. Vestnik, no, 9. 19650 18-22
TOPIC TAGS: free radical, radiation injury, ionizing radiation, UV radiation, DUA
ABSTRACT: The nature of the injuries produced by different forms of free radicals
I els is investigated and the local
and by radiation t,the cellular and molecular lev
injuries to DNAIA DNP are described. The damage to the basic matrix structure of
the cell nuclea following ionizing radiation is secondary to the call's direct ab-
sorption of radiant energy. This damage cannot be duplicated by the action of free
radicals or ultraviolet radiation. There is a difference'between the primary physi-
cochemical changes In DNA and DNP arising from Ionizing radiation, free radicals,
UDC: 612.014.22).24-06 612.014.482+612i,014.482 1 612.014.22).24
Cu-d 1/2

RE Is
MESMERM
04.
L oM4.66
OCESSION-M: AP5021366 ~UR/0120/65/000/004/0213/0216
536,587
AUTHOR: ._Kal'nin, A. A_.; Tairov. Yu. M ~Yas'koyj D. A*
TITLE: An automatic temperature contro,1 system for the growth of crystals of high
temperature resistant semiconductor materials
SOURCE: Pribory i tei~hnika eksperimenta, no. 4, 1965, 213-216,
I TOPIC TAGS: jilicot?li'n' le c steals' automatic temperature control, crystal strue,
ture, automatic control system, crystal growth, semiconductor single crystal,
single crystal growing
ABSTRACT:. An automatic temperature control system for a 30 kw device intended for
the growth of silicon carbide crystals is discussed. The instrumental error is
reduced by a) the use of electron multiplication which reduces the intensity of
photocathode illumination with simultaneous retention of a good signal-to-noise
ratio; b) the illumination of the photocathode by short pulses with the subsequent
restitution of the spectrum of the favorable signal; and c) by thermostatic contro
of the receiver, automatic brightness control, and uniform illumination of the `1_
photocathode. The range of temperature control is between 2400 and.2600C but this
may be changed by an appropriate choice of the obtUAtor filter, the dynamic error

ACCESSION NR: AP5021366
of the control does not exceed 13C, and the transient process (when operating with
a computer) is reduced 88 to 907.-compared to operation with commercial linear
regulators. The influence of the thermostatic control of the growth zone on the
perfection of the structure of the resulting crystals is also discussed* Origo
art. has: 3 formulas and 3 figures.
ASSOCIATION: Leningradsk~y-elektrotekbnicheskiy institut (Leningrad Electrical
Engineering Instituti5)
SUBM=D: 21Dec64 7~'7
~ENCL: 00 SUB CODE: 19, SS
NO REF SOV: 002 OTIMR: 001

T (h) Pt. 7/P'
L - 578' 7 0-65 EWT( I )/EPA (s) /ROP(t )/EFC',b)- - 'L
T_jD/,AV /JG/GG
ACCESSIW NR: AP5016397 UR/0120/65/000/003/0213/021-6
548.5
AMOR: --Ilfin, Yu. L.; Yas1kov,
TITLE: Laboratory unit for.obtaining gallium phos hid stals
E! cry
SOURCE: Pribory i tekhnika eksperimenta, no. 3, 1965, 213-216
3
TOPIC TAGS: gallium, phosphorus, gallium phosphide crystal, gallium phosphide
A,
synthesis, cryatal groiring unit
9A
ABSTRACT: The design and operation of a unit for synthetizing gallium phosphide
crystals from the melt of the stoichiometric composition at elevated pressure of
phosphorus vapor are described. The crystals are gro,.m in a htically sealed
fused quartz ampul, 20 mm in diameter and 330 mm long, in which iquid ge-Ilium
under a preEsure of 13.41 atm
placed in a graphite boat is saturated with phcsphorus
at about 1525C, Le., the melting temperature of gallium phosphide. Grade B-5 red
phosphorus is placed in another boat in the ampul. Before it is placed into the
pree--ure chamber,. the ampul is de6assed in P. vacuum of 10-5tor for 5-6 hr. The
Ipressure-of- an inert gas-ill the pressure chamber compensates the pressure of phos-
!phorus vapor in the ampul and prevents its breakage. The reaction zone is heated

L 57870-65
CESbION NR: AP50163*97
A
C
by- a__.25-~kiv_hf.'Jr~dui~tlon heater-Aw ng -current -at-,~ a, frequency of 5-28 mc. The speed:
_f am -Pas tb h -the- h eating--zone-- can --be --varied - from 0. 1 to -2 ma Jer
wt I rhich: the pul' ses rpug
The en --is-enclosed~ n~a--w
-tire'assembly I ater-coo'led.zte.inless steel--casing.:
n t-eists,-- light-wyell6w~ crystals" of -gal-litim- an
phosphide, 90-,tam-long-and-not less-th
50 mm in- diameter-i 'were obtained In- on& _j~as6 --thko-ugh- the - reaction zone at a speed
of 0.3 mm/min and a phosphorus-vapor presoure of about 10 atm. Orig. art. has:
2 figures. (14S]
ASSOCIMM: Leeningradskiy elektrotekhnicheskiy institut (Leningrad Electro-
technical. Institute)
SUBMITTED: 10jul64 ENCL: 00 SUB CODE: 515 Ar-
NO REF SOV: 001
omm oo4
ATD PRESS: 4038
[Card /2
M, t1 M i :I--- I L--'7

-YASKOVY-11-11-11-
USSR/Engineering Tools
Card 1/1
Authors Karagodin, Ya. P.; and Yaskov, N. N*
itle, Design and Exploitation of Ceramic Cutters
~Periodical I Stan. i Instr. Ed. 1p 31-33, Jan/1954
General information on the design and use of cutting tools fitted
Abstract
with ceramic heads is given., Tho cutters are used for the surface
smoothing of steel shafts and axes, made at mark 45 steel at a
cutting speed of 270 to 350 m/mm, depth of cutting being up to
5 m, and speed at 0.45 M. Illustrations.
I
stitution
n.
Submitted **#too*

USCR/Enginee ring Machine tools
r
ard 1/1 Pub. 103 15/Z4
Authors, Karagodin, Ya. P., and Yaskov, N. N.
Title Roughing tool
Periodical' Stan.* i instr. 11, page 33, Nov 1954
Abstract The advantages of assembled tools over the ordinary soldered roughing
tools are listed. The geometrical parameters of an assembled roughing
tool are described. The work, of the snagging machine using an assembled
roughing tool was found to be more stable and the intensity of beat forma-.
tion at point of cutting is much more reduced in comparison with previous -
ly used tools. Drawings.
Institution
Submitted

YASKOV, WeNe
Tail spindlIe with rotating center. Stan. i inst. 26 no-9:
29-30 8 '55- (Lathes) (KLRA 9:1)
7p,

DURDA, V.T.;~YASKOVV.N.
Business accounting of operations at the lead smeltar of the Lenino-
g6rBk Combine. TSvet. met. 36 no.12:78-79 D 163. (WRA 17:2)
IMMI ......

POLYP-", - ----------------
V -M~17k-~ folla

7-1' ~tt~
YANOVA, G.N.; YAKOVLEV, M.N.
Some conditions for the stability of Petrov-Galerkin's method.
Trudy Hat.inst. 66-.182-189 162. (MIRA 15:11)
(liperators (Mathematics)) (Matrices)

J e- ~--J, d ~--
BRENINA, Varvara Vasillyevna; MINAKOVA, An Grigorlyevna; YASIKOVA,
&&bd&.XjWnovma; SVERDLOYA,I.S.. redaktor; GUSICV,L.A..,
redaktor; MLVM=AYA,L.K., tekhnicheskiy redaktor
[our work practice with Paudot appe6ratual Hash opyt raboty na
apparate Bodo. Moskva, Gos.izd-vo lit-ry po vopro"m sviazi i
radio, 1955. 30 P. W-U 9:3)
(Telegraph)

15-57-4 -4098
Translation from: Referativnyy zhurnal, Geologiya, 1957, Nr 4,
p 6 (USSR)
AUTHORS: Sikstell, T. A.p Yaskovichp B. V.
TITLE: The Characteristics of the Cambrian Rocks of Southern
Fargana (K kharakteristike kembriyskikh otlozheniy
Yuzhnoy Fergany)
PERIODICAL: Tr. Bredneaz. un-ta, 1956, Nr 82, pp 115-118
ABSTRACT: In addition to the known data, the authors have
established the fact that Cambrian deposits are
widespread in the border area of Madygen, where they
extend for 20 km from the source of Dzhida-Balsk
(Shurab region) westward to the canyon of Madygen.
The Cambrian contains a seri6s of cherty, oolitic, and
algal-nodular limestones containing the Hormogoneae-
Corbularia conglutinata Vologdin and lying on top of a
series of sandstones, Rabases, and porphyrites, with
lenses of limestone containing remains of brittle
Card 1/2 inarticulate brachlopod valves. The section is topped

.. The Characteristics of the Cambrian Rocks (Cont.) 15-57-4_AI098
by a ferruginous-siliceous breccia. The thickness of the Cambrian
is measured in hundreds of meters.
Card 2/2 A. I. S.

YA,SKOVICEE, B.V.
New data on the presence of bitumens in Cambrian rocks of southern
Fergana. Izv. AZT SSSR, Ser, geol. 23 no.2:107-105'Y 158. (MIRA 11:5)
l.Uzbekskoye geologichoskoye upravleniye, Tashkont.
(Fergana--Bitumen)

YASX0VICH. B.V.,
Now data on the Ordovician in the southwestern Tien Shan. Uzb. geol.
2hur. no.1:53-56 ','59. (MIRA 12;7)
I.Glavgeologiya UzSSR.
(Tien Shan-Geology, Stratigraphic)

Y-ASKOVICII, B.V.
Stratigraphy of Cambrian sediments in southern Fergana.
Trudy-Uzz.geol,upr. no'l.3-8 160. (MIRA 14:8)
(FergZ;-Geology, Stratigraphic)

SIKSTBILI, T.A.; YASKOVICH B.
~~_.Mvl_
New data on the age of the Akchinskaya sedimentar76-voleanic
series of the Kurama Range. Trudy Uz.geol.upr. no.1:25-29
160. (MIRA 14;8)
(Kurama Range-Geological time)

KHAYRULLINA, T.I.; YASKOVICH, B.V.
Recent data on lower Cambrian deposits in the basin of the Altykul'
River. Izv. Otd. geol.-khim. i tekh. nauk MI Tadzh. SSR no.2:111-
117 161. (MIRA 15:1)
1. Geologo-s"yemochnaya P015kovaya ekspeditsiya Glavgeologii
UzbSSR.
(Altykyll Valley--Geology, Stratigraphic) (Trilobites)

YASKOVICH, B.V.
Cambrian sediments in the western end of the Turkestan Range. Trudy
Uz. geol. upr, no.2 13-6 62. (WRA 16:8)
(Turkestan Range--Geology, Stratigraphic)

SIKSTELI, T.A.; YASKOVICH, B.V.
Mesozoic volcanism in Central Asia. Trudy Uz. geol. upr. no.2:
14-20 162; (KMA 16:8)
(Asia, Central-Volcanoes)

L 62861-65
ACCESSION III: AP5019031
UR/0266/65/000/012/0066/0067
621.673.132
621.068.277.3
,01THOR; Artamonov, Yu. G.; Novozhilov, Yu. I.; Yaskunov, N. P.
_:-..-jTITLE.* A lift for a hauling tractor. Class 35, No. 172013
!SOURCE: Byulleten' izobreteniy i tovarnykh znakov, no. 12, 1965, 66-67
ITOPIC TAGS: tractor, logging, hoist, lift
iA13SVMCT: This Author's Certificate introduces a lift for a hauling tractor. The
!device contains a rotating column, a boom and lever which am moved by hydraulic
cylinders, and a jaw grab with hydranlic drive. The grab is mounted on the free end
of the lever. The device is designed for loading and hauling both incividual logs
and bundles of logs. The unit has two pulleys thmugh which the wincl cable from
the tractor passes. One of these pulleys is mounted on an axle which hinges the
boom to the rotating column, while the other pulley is mounted on the boom by hinges
which connect it with the lever and with the rotating colLmn.

Osumi
T 62861-65
ACCESSION NR: AP5019031
ASSOCIATION: Onezhskiy traktornyy zavod (Onega Tractor Plant)
SUBMITTED: 06reb64 ENCL: 01 SUB CODE: IE, PR
NO REr sov: ooo OTHER: 000
!Card 2/1__

L 62CI61-65
ACCESSION NR: AP5019031
ENCLOSURE: 01
Fig. 1. 1--boom; 2 and 3--pulleys;
4--cable; 5--axle; 6--rotating column;

DOGVILLI) Viktor Ivanovich; LIMITS, Erik Abramovich- LYSOCEMKO, Lleksandr
Alekseyevich; NADEMIN't Konst4kntin Nikolayevich; NOVOZHIIDV, Yuriy
Ivanovich; SOKOIDV, Rikolay Aleksandrovich,- FEDOSEYEV, Oleg Vasil'-
ff,_XikoIayJajqyLbLHAGIROVSM, N.P., red.j PAN
IOLMOV, A.P., red.;- PODwYELISKAYA, K.M., tekhn. red.
[TDT-4CM diesel timber-skidding tractor] Tralevocbmyi traktor
TDT-.4CM. Pod red.N.P.Magirovskogo. P9tro2$vodskq Gose J.zd-;ro Karell-
sko~ ASSR, 1961. 355 p. (MIRA .14z10)
(Tractors-Design and construetion)

SALDADZE, K.M.; YASHINOV, A.A.; GVOZDIlj'A,., -I.N.
Systems of d1stribution of elcntroL,%-,:;n in electradializers. KIM-M.
prom. no.lOs756-760 0 163. (MTRA 176)

ANDRIANOVA, N.V.-, REY,rLINGER, S.A.; SHCHERBINA, N.G.; tXAqRIN0Vi'%:, L.I.
Joining of polyethylerAtereplithalate films. plan4 nausy nc.1.73
164. (141RA 17jo')
VMMMM-,~M-,

EWr (mj/gPr(C I/EtIp (vj/VPVtWp (j I/T pc-4/pr-4/ps-4 WjI/A1.1
ACCESSION ITR: AP4009841 s/bl91/64/Ooo/o0l/0073/O073
AUTHORS: Andrianova, N.V.; Roytlinger, S.A.: 3hchorbina, N.G.:
Yasminova, L.I.
1ITLE: Oementin&~olyothyleqe torephthalato film
SOURCE: Plasticheskiye massy*, no. It 19640 73
TAGS: polyethylene.terephthalatet film, cementing'welding
cementing techniques, polyester resin cement, polyethylene tore-
TP-60 polyester res cement
'phthalate-film, I j~TF-60
V9
-....:-ABSTRACT: the liter'ature-on wclALnjg and cementing polyethylene
terephthalate film is discussea. -he following cementing technique
is proposed using ethylene glycol polyesters of terephthalic or
sebacie acids as the a .\5 Amethylene chloride solution of
&S s iy_9
Polyester TP-60 is brushed on the film to be cemented. Por a film
12 microns thick the desired seam width is 5-10 mm.; for 25 micron
--.film, 10-15; and for 50 micron film, 15-20. The layer of resin
between the-film should be 8-10 microns thick. The film Is air
dried for 3-5 minutes to remove the solvent; the coated film Is
Card 3./2.
P., M~Of

YASKAYA, L.V.
Olinical aspects of rheumatism in preschool children. Pediatrita
39 no-3:87 Xy-Je '56. (KUU 9:9)
1. Is revmatologichookogo otdeleniya otdola profilaktiki i terapii
detskikh bolezney KharIkovskogo nauchno-inaledovatellskogo iastituta
okhrany materinstva t aladenchestva imeni N.K.Krupakoy (dir.-kandidat
meditainskikh nauk A.I.Iornikova)
(RHAMT 10 YWIR)

IEVITUS, Te.L., DMITROVA, N.A., TASNAYA, L.Ve
Functional capacity of the cardiovascular system in rhaumatic
children@' Vope'okhemat. i det. 3 no,'6aft N-D 158 (M3RA 11;12)
1, Is revmaticheskogo Welenlya (nauchay rukovoditell Te"L. Levitue)
lharlkovskogo nauchno-issledovateltakogo inBtituta Okhrany materinstva
i m1adenchstva imeni N.K. Krapskoy (clir. kand.med.nauk A.I. Kornilova).
(RE3UMAT X 1MVER)
(CARDIOVASCULAR SYSTEM)

.-.,-YASNMXM, 1. A. (Leningrad)
Clinical aspects of primary cancer of the liver. Klin. med. no.11:
33-37 '61. (MIRA 14:12)
1. Iz kafedry gospitall nay terapii Voyenno-wditsinskoy alcaderaii
imeni S. M. Kirova (naoh. - deystvitelirgy chlen AMN SSSR prof.
N. S. Molchanov)
(LIVER-CANCER)

YASNETSOV, V.S.
Affect of aninazine on gastric @aeration. Yarm. i toks. 19.
upplament:33 056. (MLRA 10:7)
Kefedra farmkologii.Smolenskogo neditainskogo Inatituta
(nauchnyy ruko'voditell - G.A.Ponomarev)
(GASTRIC JUICE.
secretion, off. of chlorprmsziue (Ram))
(CHIAMMONAZINZ. effects.
on gastric secretion (Rum))

USSR Pharmacology, Toxicology. Histamine and V
Antihistaminics.
Abs Jour% Ref Zhur-Biol., No 18, 1958, 85185.
Author
In3t : Smolensk Medical Institute.
Title :The Influence of Dimedrol on Gastric Secre"U'lon.
Orig Pub: Tr. Smolenskogo med. in-ta, 1957, vol 6, 83-90.
Abstract: Dimedrol (D), given intramuscularly to dogs with
an isolated Pavlov gastric pouch, in a dose of 10
mg/kg 5 min prior to feeding (200 gm of white bread),
produced within the first hour a sharp diminution,
vjit,h subsequent elevation, of the secretion of
gastric juice, free HC1, and total acidity; the
action of D on the amount of enzyme durin,,T, this
period was inconstant. The secretion ordinarily
becomes normalized by the seventh hour. D given
Card 1/2

V
-USSR / Pharmacology, Toxicology. Histamine and
Antihistaminics.
Abs Jour: Ref Zhur-Biol., No 18) 1958, 85185.
Abstract: in'the same dose after 3 hours of gastric secre-
tion, produces the greatest reduction in gastric
secretion, free HC1, and total acidity by the sec-
ond or third hour after injection, reducing slightly
the enzyme content within the first hour. Suppres-
sion of gastric secretion under the influence of'
D is related., apparently, to the parasympatholytic
action of D. The effectiveness of the influence
of D on individual peculiarities of tiie animals,
also. -- A. Yu. Mychko-Mergin.
Card 2/2
45