SCIENTIFIC ABSTRACT VISCRIAN, I. - VISHENKOV, S.A.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001860020019-4
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 1, 2001
• Sequence Number: 19
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

V16GPIAN, I.
Contributions to the realization of a 0 and i portable detector
with tranistors. Studii fis tehn Iasi 10 no.IS117-118 159
(Counters (Eleotrons, ions, etc.)) (RUI 9:3)
(Transistors) (Geiger-Muller counters)
(Beta rays) (Gamma ray a )

VISE, V. Ya.
''-'he Problem of Long-Term Forecasting of the Amount of Precipitation
in April and May in the 6outh-Central and Eastern Regions of European
Russia," Geofizicheski*-gboL-nik (Geophysics Manual)s No 3, 1925-

PkLI, Kalman, dr.; VISEGRILDY, Lujos, dr.; REW)HY, Brno, dr.
Our experience with the treatment of incontinence in women.
Magy.noorv.lap. 20 no.6:301-306 N 159.
1. A Baranys NeVel Unace Korhaza (Igasoatol. Steinmetz Irdre drs)
Szuleszeti es Mogyogyanzati Oaztalyanak (Foorvos: Pali Kalman dr.)
o6 Rontgen Oaztalyanak (Foorvoe: Visegrady LaJos dr.) kozlemerqe.
(URIN&TION DISOPJFM surg)

SKM&, Ervin, dr.,; VISEGRADY. IzLjos, dr.
Surgery of benign ulcer of the greater curvature diagnosed by
roentgen rays. Orv. hatil. 96 no.9:242-246 27 Yeb 55.
1. A Magyar Naphadsoreg Agesgugyi Szolgalatanak kozlemenye.
(PMIC LUIR, surgery.)

<
9. -I%nuau%l ~'kr- vf .19--irl, C: L Alit-104 .71
Mi. of, i5
enf
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pit.1 Ir Ir4
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ch
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a!rvemur rrezo~Ld)i pj~ 175-1~')
-^rt~w. of .!.t a
--rrz - -In
zm" X,
jli~h
sjr-OUMLM-~~" th. -'-~itlc
r~r w~4m%~,3u rl
or jvf'.*~ 10
t,;, L.tzla VLS Z
&r.1 S t - ,
Ir.
'tn**;~..%X= ftl- ~-63 of -dfg~tz ~.l --litakta Lq :jbLrator,~
A.t;-c - .,a-
f -Ale .30
""r). f4*0,
t" ~LLA'J' Z =-V -e La F %, P;X'

CHLUMKY, J.; VISEK, V.
Apropos of the role of primary chronio progressive polyarthritiB
in the pathogenesis of chronic liver diseases. Cas. lek. cesk.
103 no.45tl246-1250 6 N 164.
1. 1 interni klinika lekarske fakulty hygienicke Karlovy
University v Praze (prednosta prof. dr. V. Jonas, DrGc.).

VISEK, V.
Serotyping of urinary strains of F. ccli in clinical practice.
Cas. lek. cesk. 103 no.34:950 21 Ag 164.

VISEK, Vlastimil
-.. .... 1- 1-----
The problem of clinical use of nerotyping of S. coll strains
from urine. Vhitrni lek. 11 no*6091-594 Je'65.
lo I. klinika chorob vnitrnich LFH Karlovy University v
Praze (prednosta: prof. MUDr. Vratislar Jonas, DrSc.).

RADIOLOGY
CZECHOSLOVAKIA uDc 616.61-073-916:547-458.4
VISEK, V.; 1st Internal Clinic, Nodical Aculty of 1Hy-,,iene, Charles
IMTV"my (I Interni Klinika Lekarske Fakulty Hygienicke KU)s
Prague,, Head iPrednosta) Prof Dr V. JOITAS.
"Isotope Bephrography Using Inulin il3l."
Prague Casopis Lekaru (;eskych,_Aol 105, No 19, 13 May 66, pp
497 - ~00
Abstract CAuthor's English sumnnr modifieg: Nephrography curves made
after an injection of inulin J131yare similar to the curves that are obtained
after an application of hippurate. Their 3rd (excretion) phase is) howevers
much lower, because inulin is excreted only by glomerular filtration. it
may be possible to evaluate partial renal function by comparing renal
radioactivity records resulting from consecutive application of labelled
inulin and hippurate; it is also possible to administer the 2 substances
simultaneously, if they are labelled with different iodine isotopes.
4 Figuresp 4 Weeterap 5 Czech references. (Manuscript received July 65).
1/1

SAPOULIKOV, D.G.; VISELKINA, IM.A.
Exogenous uranium deposit associated witb a variegated continental
formation. Geol.rud.mestorozh. no,3:22-42 MY-Je 162. (14IRA 15-6)
(Tirani= ores)

EPA(11)-2 /17vT(m)/MT(n)-2/T/EWP(t)/EWP(b)/-rWA(c) pu-4
__IW(j) WH/.ES/JD/W-d/JG
AM5014982 BOOK EXPLOITATION UR/553.061046.79
Batulin, S. S.; Golovin. YE. A.; Zelenovs, 0. 1.; Kashir seva . MAII.
Ko-,tnrova_,. G. V.; Kondr t'yeva, 1. A.1 Lisitain, A, K.1 ?srel'man.
Z_._1.__:9i_n_d_c_Mnikova,_V. D.i ChernLkov. A. A.; Shmariovich. ig. M.
Exagenous epigenetic deposits of uranium; formation conditions
a
(Ekzonennyyc epigenctLcheskLye mentoroxhdaniya urana; usloviy
obrazovaniya). Hoscow, Atomizdat, 1965. 321 p. Illus., biblio.,
Errata slip inserted. 1100 copies printed.
TOPIC TACSt deposit formation, epigenotic theory, exodiagene tic
deposit, surface uranium accumulatLonj uranium bituminous deposit,
uranium deposit, uranium, nuclear fuelt/a,
'PURPOSE'AND COVERAGE: ThLa book is intended-for readers specializing.
in the geology of are d!~posits, in particular for those c oncerned
with atomic raw materials, and also for students of higher- due&-
tion institutions. In the book, for the first time in Sovi:t :nd
foreign literatures, the epigenetic theory of uranium-deposit
formation is expounded. Hany Soviet and foreign source materL to

6-5019~-65
AH5014982 13
have been used in this book, and some of the investigations
carried out b7 the present authors are published in this book for
the first time. Several names of Soviet scientists working in
this field are mentioned. V. A. Uspenski collaborated on Ch. X9
and M. A. Vicalkins on Ch. III. The authors
docanse-iF, C-orrespod Ing Member Academy of Sciences USSR, and
F. 1. Vollfson, D. G. Sapozhnikov, V. 1. Gersolmovskiy, M, F,
.-S. Gritoax , and 1. . Kushnarev, Doctors of
G enk
Geologico-Hineralogic Sciencesl V, Is Danchav, Candidate of Geo-
logico-Ifineralogic Sciences, and H. A. Volokovykh. There are
about 12 pages of references of which about 3/4 are Soviet.
TABLE OF CONTENTS labridged)l
Introduction -- 4
Ch. 1. Epigenetle processes in hypergene rt a zone -- 9
Ch. II.. Chauistry and crystallochasistry of uranium coupoundf 22
r-'A 9JL

W5014982
Ch. III* Associations of nonox'LdLsed uranium w1morele to
spigenatic deposits.-- 37
:he IV. Uranium In surface and ground water$ -- 49
'he V. U anium In stratal vaters -- 57
r
:he Vt. ClaceLficatLon of exogamous ursuUum deposite -- 03
Ch. VII. Exodiagenatic deposits (Type 5) -- 113
Ch. VIII. Deposits of Oxygenous sheet oxidation (Type 6) 133
Ch. IX. Deposits of oxygen-free oxidation (Type 7). Deposits In
oil-boating carbonate rocks -- 180
Ch. X. Urantum-bituminous deposii.,ie nonmetamorphosed sedimentary
rocks -- 215

SUB CODEt ES SUBMITTEDI 047ob63 10 all SOVI .188
OTHERt 118
50199-65
AM5014982
Ch. X1. On surface uranium accumulation@ In regions with arid
climate -- 232
Ch. X11. Zone of oxidation in apiganatic, deposit-@ 239
Conclusion 275
Relerences 309
AVAILABLEs Library of Congress

SAPOZHNIKOV, Dmitriy Gavrilovich;.YI87
BEZWKOV, P.A. , otv.red.; BILTAXUVA, Te.T.,
VOIKOVA, T.T., tekhn.red.
[Recent sediments of IAkc Issyk-Kull and its bays] SoyremenzWe
o9adki ozers Issyk-Kull i ego salivov. Koskva. Izd-vo Almd.
nauk SSSRO 1960. 159p. (kkademiia nauk SSSR, Institut
geologli rudr7kh mostorozhdenii, petrografii, minemlogii i
gookhimii. Truc~r, no-36).
(Ineyk-Kull, Iaice-Sediusnts(Geology))

VIS'alove X.P.
-
Topography of the bronchial arteries. KhArargiia, Noskva no. 2:17-
24 Fab 1953. (CLKL 24:2)
1. Candidate Medical Sciences. 2. Of the Military Medical Acadmq
imeni, S. K. Urov.

KARAVAYEV, Aleksandr Petrovich; VjSEN&,-Ahuan__ ed.; VASILIYEVA, G.N.,
red. izd-va; TSAGURIYA, G.M., tekhn. red.
(Spain; economy and foreign trade]Iepaniia; ekonomika i vnesh-
nala torgovlia. ?4oskva, Vneshtorgizdat, 1962. 154 P.
(MIRA 16:1)
(Spain--Economic conditions) (Spain--Commerce)

VISGOOIYSKI-Y. Ya.,, shofer
For perfect organization of work. Avt.transp. 40 n0-5:12-13
My 162, (MM 15:5)
1. Villnyusskoye taksomotoimoye avtokhozyaystvo MizListerstva
avtomobillnogo transporta i shosseynykh dorog Litavokoy SSR.
(Vilnius-Taxicabs)

VISH, I. M., Dr. Medic. Sol. (diss) "Psychotherapy for Some Nerve-
Psychic and 3omatic Disorders," Leningrad-Tambov, 1959, 32 pp.
(Leningrad InGt. Improvem. of Trng of Doctors) 300 copies (KL
Supp 12-61, 282) .

M.,, kand.med.nauk
Therapeutic significance of suggestion and hypnosis in cerebral
vaeopathy. Trudy Gos.nauch-issl.inst.psikh, 25:538-550 161.
(MIRA 15:12)
1. Tambovskaya paikhonevrologicheskaya bollnitsa (glavnyy vrach
zasluzhennyy vrach A.M.Pasarnitakaya) i klinika sosudistykh
peikhozov tzav. - prof. V.M.Banshchikov) Gosudarstvennogo
nauchno-isoledovatellskogo instituta psikhiatril Hinisterstva
zdravookhraneniya fLSFSR.
(CEREBROVASCULAR DISFASE)(TliFRAPEUTICS,SUGrF.STI'IE)
(HYPNOTISM-THERAPEUTIC USE

--7 2
peychotherapY
2 430-441 163.
ya oblastnaYa
nbovska
Tar yv~
,h
vra,!h Z!,q.i.,.,zj,e,nyy vra 1.14.Sechenovu
MoSy.(,Vsir na 1,!mna riJ t I"A
~go ~,rrlf~ V).
(zav. ki-ifedroY F)r~,f- V.mjiaiioh~h I kc;

VISHf
ticn while ir a w%keful 1 t.3.
mi; Pyt '17
1. Tarabovskava bcllri-' tsa (glavnvy v~ra,.-r,
zaoli,zhonryy vr.,A(:h fi.".FSTI AX.j
I-pr-, Mcukovskogo ordenu ieynnn
Sechenova (zav. kafedroy rr,f. ~;,Y.BanGt,chikcv).

tM/kedlcine - Training jun 49
Medicine - Nurses and 17ursIng
"Second scientific Conference of Students at
the Tambovka School for Medical Nurses,"
1. M. Vish, 3/4 p
*Med Sestra" No 6
Second Sci Conf of Students at Tambovka School
for Med Nurses held 15 Dec 48 was attended by
140 students and eight supervisors. Reports
:Vere on chemical neuropathology and psychiatry.
Conference pointed out necessity of nurses
gaining a more thorough knowledge of problems
of neuropsy--hic disturbances through
.59/49!177
"Mm/kedicize - Timining -(Contd)-- *-J--u-n-"-'4-9 -i
postgraduate work. Dir, Tambovka School for Med.
Nurses: ]Dr M. L. Tsypuk.
59/49TI.7

I
-- VISE, I. M.
0NNW0AVWAi&Wv
Propaganda of psychohygionic knowledge. Nevropat. paikhiat.,
Moskva 20 no-3 May-June 1951. (CDG 20:11)
1. Candidate Medical Sciences. 2. Of Tambov Oblast ITeuro-
Psychiatric Union (Read Physician -- A. H. Pinarnitokaya).

ZIMIN, P.N.; PISARNITSRAYA, A.M.; VISH, I.M.; MAXSIMENNO, V.I.; SAMORODOVA, A.I.
Immediate results of tissue therapy in psychic disorders. Zh. nevropat.
polkhiat., Roskya 52 no.1:47-48 Jan 52. (CLML 21:5)
1. Of Tambov Oblaet Psvehoneurological Hospital (Head Physician-A.K.
Pisarnitskaya).

VISH, -1-M-, kand.med.nauk
Psychotherapy in the clinical aspects of cerebral arteriosclerosis.
Trudy Goo, nauchno-isal. inst. poikh. 22:426-05 6o. ('aRA i5a)
1. Tambovskaya oblastnaya psikhonevrologicheskaya bollnitsa (glavnyy
vrach bollnitsy a z"luzhennyy vrach RSFSR A.M.Pisarnitskaya)
Nauchn rukovodAtell - Erofessor V.M. Banslvhikov.
?7cFx%HLL AhTZHIOS URCSIS) (PSYCHOTHERAPY)

RUMANIA Virology. Human and Animal Viruses E-2
Abs Jour: Ref Zhur - Biolop No 6, 1958, 24009
Author : Vishan,,-Satmari, Petrushka, Stanku, Bronitskiy,
Rotshild, Pironkof, Gune
Inst : Not given
Title : Study of Effectiveneas in Vaccinations Against
Influenza.
Orig Pub: Studii si cercetari inframicrobiol., microbiol.,
si parazitol., 1957, 8, No 1, 57-69
Abstract: No abstract.
Card 1/1

VISHAIIISKA, IU. , 4'nzh,
Theobror"Ine, aM the poaalb!*~Jty of its production ir, cup ~rlmtry.
Khim i industriia 34 no,2!:79 162.

VISOHMS, Yu. K.: MELster Phys-Math Sci (diss) -- "Some optical, electrical,
and photoelectric properties of polycrystalline layers of CdSe". Villmus, 1958.
12 pp (Min Higher Educ USM, VilInyus State U im V. Kapsukas), 150 copies
(KL, 140 15o 1959, 113)

23(4) 23 (5)

AUTHOR- Lyalikov, K.S.
TITLE: Successes of Soviet ElectrophotoGraphY (U:P*khl sovets-
kaZ slektrofotografii) A Scleatifle and T C-.-
t6khal-
farenc* an 4ueations of Electrography (Ilauch
chaskaya konforentalya po voprosan tlektrogrLfIL)
PM-IODICAL: Zhurnal nauchnoy I prikladcoy rotc~rsrii I kineasto,-refit,
1959. Val 4. Nr 2. pp 149-152 (U"q)
&W ra-Z --T This in am account of a sclazt1fic and technical Con-
foronce an oltctrography, the fire, to be hold in the
vident-'y in the world. It was organ-
Soviet Ualom and
&zed In Til"ayus n December 16-19. 1958 by the Soviet
:
naroda 0 khozymjstva LLtOY3k0y Za (COWLCII for
NatioM Zoooomy of the Li-huanion a3R). the Gosudarst-
voaWy natichno-tsh-hatchexkLy kozitot Soveta ministrov
Litovskoy 5ZR (Ztate Scientific and Technical Committ*e
the Cquacil of Mnl3terj of the L-Ithuanian ") and
the Nauchno-ia3lodovat*I1skiy institut elaktrograrti
(Scientific Research Institute or Electrog.-3phy).
The conference, attended by over 300 scientific wor-
kers, was opened by the Deputy Chalr--An Of the council
for Vatlonal Economy of the Lithuanian r1aR P.A.
Kultvats, after which the director of the Institute
far Electrography, I.I.Zhiltvich, reviewed the state
and prospects for development of *Iectroerephy In the
USZR. He stated that ros*a=h to this field should be
carried out along the following lizos: a) a search
hoto-activ* materials with high dark reattLnce;
r now
f
b pb_v c4a research into the Internal photoefl*ct;
e1
j
a derelopment of photonamiconduc tor layers; d) do-
volopmeat of the theory of the olectrophoto~-raphic
process K S Lvalikov (speaking also for O.G. lopova)
=inLZ7tL
t
d d
t
- e
e
er
e
-fave a ropor which he sut:Zts
ir;ht sensitivity of eI*ctraph,2to~;ra;hiC layers to Goa?
units. fsPeaxlng &--so for I---Zhil*vLch.
-
L.I,I-Valko. -N.Mark9vich, ?.!. Kalinauskov!
aA4 O.M.
S4vejxdis) repartiT-or, so=* researc-r-on the sonsiti.-ation
Or a semiconductor in eIqctro;hotoi;raph1c layers. V.:.,.
FUlkin gave a report on niZ!Uy secattive sitetrophoto-
graphic layers and &A electro;hcto-opyine device. "
reviewed the foriAtion ;ro.-oss or tLe Intent *I*ctra-

hatographic imale an tt-.* basis cf th:
zonal tr,eary.
g
l
d
b
o a
so
escri
e the d.sl6t of an *I trOsOusit0astor
,
for determining s*rnitly-ty ty --he relazation period of
a charge an the surface of the lay*.-, and the circuit
Of an elect ro;hatoeraphic Cl-pylUg device. AXILUOV
finished d*scribina tto latter a=1 then o;ok* ?n t-.Q
asc!.anics and kinetics of !%o --q.*Io;ztct of t..* latent
electrophotoeraphic Ica&* In 'Jquid developers.
Card 3110

Succ:ssoo of Soviet LiectrophotoGraptLy; l, 3cientific and Technical
Conf rence an questions of Slectrography
X.N. Viziogradov described some or the features of the
cazcn* amd liquid methods or alectrophotocra;Uc do-
volopaout. ru.Ye. 1ALrp*ahko devoted his report to the
criterion of light sensitivity of tb:,&lctropho*ocrsphic
pr"esa. After the reports, a d13CU 10 took ;-'&C0
an methods or determining the light staxitivity or
olectrophotcorephic layers. ;-r. Chtrny3hav spoke on the
prospects of developing polygra=c processes using
electric and magnetic forces. 0.V. 5romov also
for 1.1. ZhIlovich,
Paushm and ru. i. israilytis ) repor d on the develop-
samit of slotrophotoCr-sphic reproducing equipment. A.3.
Pauthe (agooking also for 1.Z. Zbllerlch. A.S. :,D I
viclis N.M. Galevidtks aal M.:.R1.utk&uakom) repcrtio-
an the use of-Mctrogra;hic att-S-Ms in recordLr.;,
oecillograpbs &W other recording Instruments.
T.k. jur -A* an
_Cttnkc (speaking also for L.N.~n) a-
tb* possibility of eltetropbcmgra;hlc:lly,recor-----,g
ismgoa from electron-tw4a ttoo. L.5.
also for N.Z;. !!mrk&vLch. 7.1. Eo=lows eye .1.
Italinausken,a. U.K. Eaym*Ls, 1.f-.7SI1svialgpwW and
I.A. MoaWzis) gave-rderailed description of 12~or-
story "I zsch4no methods or prc.duolng pbotoswa:tcaWuc-
tor papers (zinc oxide was used). L.A. Sukhly (s7w1MnZ
also for 1.1. ZhIlovLch, O.V. Gramov, I.F.A. Go--deywv
N.V. PS.Utor and T.N. q!r) described a laboratory
And industrial mAchIme for ;rCI.Iing photosemicocdoctor
pal,ors. T..I. M%Ixhkln& also for Ya.,~. -4)
reported an &.-Q-erbo4 or 4t=--tLtcg olectrophowCra.,~-rrc
materials using an a/c bridge. S.1.
(speaking also for A.r. Gixons L=4 : 5
spoke on dov*lopLod matefrale for *I;c 6ophotCj,~rx;by
and forAmagnitographj, 14cludLza devtlopers 4ivixg a
"reverse' Lmwkgo. B.I. Tikhomov rev Level cothods or
Pasurim; the electrosCa-M pateztiais of &1ectrophato-
; pblc layers, stressize that the oscillatizi: electrode
:
should noz be placed above a layer with varyln& poton.
tial as this causes s*lf-dIsct%rZo. ~;.V. Xrj~CaV3"S
Capeskin,; also for R.!.LUo.cj, 4-7.03ipov wm~! it.
S, QSyfets) spoke an the -rectic~~3`.O-;ro4ucL=C rel.
esteem papers in AA electrostatic r1s:dO and showed
samples produced by the 1r1gIstLsk%y& paper factory.
Ke L. S$ZLrovakly t-em ve a !,istarleal review o: Lhe
T
aevniopre"t or electrodraphic totto.'s in chict. be -.^III
tribute to the work of the Scionlifte Research :=Atituto
all Klectregrapty In VIVAT4.9 a=-' -to :zatitut ;oIlgraft-
chaskogo nashInos-roye=41a (-"csk7s)-(roly9r&;h1c rLathloo-
Building IzAtLtute (kosco.)~. :-et~atos were "an -1e14
Card 6/10

an n*thodo of neam- -to Pr#atia! of charged olectro-
Photocraphic laTers, ---* T_*br3-.1oL plck-up nost-used
was Shown in B.I. Tik-homov's r-pirr to be not always
&CCLIrsts. S.G.3rSWA.Lin stated that t.14 bad Jaflutzce
of the oscillatin; *I*--rod- can to eliminated it the
electrode probe above Its to flz*4 ant the ;Ick-
up is conn*ct*A to it by a al.iold*4 cable. In the 4*-
beta an fe.L. Nomirowski7la repirt it was stated that
the restarcls of Ac&dozlcis~s A.N. T*reoin and Ye.K.
Putseyko abould be cz=ldore! so the basis of all work
cla slectrc;b4tcSr&;Uc pa;~-rj w,.th :r4g at they were
the first to show the ;'Csfthtliry of optical sensiti-
zation of the lztern&l photaeft*cz in ZoO. N.':.Gol-
L)- a than save a ro;.2r% on the depositing of charZes
Porous discharge. A. I . K-%=!AskAG &Z4 A.P.
.19 reviewed moz* of t- Fv,~Its of the
rogra- c methods in radiceraphy. L.I. 11yualko
xing also for I.I. Zhill*vIch. I... I'layin. ru.K.
-h ss&ad Yu_Zibuts) reported on relazat-Eft-V~
. ij~&
Ali
r emicanddMr laytro, ustoz a vibration electro
aot:r;aYu&jLLTjmhmksa gays a rt;ort on res*arch on same
Phy i I ;Foptrifiii oi the polycrystallice layers of
toloolous cadmium. V.P. rjkAj):y&vichyuA spoke on come
of the photoelectric propertles of Sb2-g and Sb'Se3z the
&boo tko SAZI cf the latter Is abo: 900 a A .
a. ".= ;n;.. an methods of obtaining selenium
ligbt-amnaLtIve layers, incluALng sublimation &w ther-
mal treatment; It w" &1&o foutl that the sensitivity
of the layers Lacroamod after storage for 1.5 to 2 months
m
t room to"raturo P. ?a-- 1. (speaking also
or B.G.Grealt-Un) ;poke an researc n o
f h I t the *100-
trical pr:E~f-*Maa of tllactrophotogra;tac layers of
-alsor0ous selenium and powdered zinc oxide. NA.
Shl crov (speaking also 'or A.Z. 741AZaitit) discussed
reduction of s*le=lua layers &Ei *at* of their
proportits. rinaur the roilewice reports on ferro-
mAguotograghj were delivered; 1) B.Ya. Kagnschtytv,
V.'-' " in& 'ZI t *;~Osltlrn of UA-mat-0-ra-rd Alloyx
wLWKv2n k&gZ_.zccrCOdhar&cter11stlcs' 3) '--.r ATa!x~nov'
*Visualization of tai.-cotic Oscill-graas by ;be rarro.
graPic setiz-,* 3) ya.patruaov. *Perrographic 0.0-,rding
of Facalaille !"sea* 4)_-n.Zh.Ll*vlch I I'I,_211id. B.
To._Pjw.b~k. I.:. K&Z=st. r~rk "Pvrlasatm
IA Ean-Preasare FWrro=Lz_-etlt -ri=r.1nz*. ntere was
&Zoo an ezhl~ItLon stmze t-to war& of the 'lectro-
graphic institute. Me =a- Imp-irtamt conclusion or
the conference was that a solid approach had beta made
to the possibility of .---* t0cf-lical us* -a Zethod
of elac; rography. It was considered trot al thou..h work
in this field easoally starug soly in 195~_56 it Me Gower.4 " such pound
am %he UZA In 10 years. Jhile &4;zittLn~; that it I&*
easier to reproduce results already achieved ttAa to be
%be first to arrive at than. the cQcX*rer_ct observed
that the Americ"s took good care that no Laportant
L:Lfora&tLon &;poar~4 in -!-.* lltorat~re avalable.
Card 10/10

3/081/62/Ooo/oo6/o11/117
B1661B101
AUTHORSs Viid/akas, J., Stonkus, S.
TITLEs Growth of CdSe single crystals and some of their properties~
PERIODICALs Referativnyy zhurnal. Khimiya, no. 6, 1962, 34, abstract
6B205 (Uoh. zap. Vil n sako un-t. Matem., fiz., v. 33,
no. 9, ig6o, 149 - I~Or
TEXT: The single crystalswere grown by the Frerichs method (Frerichs, R.,
Phys. Rev., 1947, 72, 595)- It was established that it is most convenient
to grow single crystals by the sublimation of CdSe. CdSe single crystals
grown in H with an admixture of C1
2 2 (type A) have greater dark resistance
and greater relative photosensitivity than those grown in pure H
2 (type B)'
It was establiahed that the dark current, the photo-current, and the lux-
ampere characteristic index m have maximum values in a certain temperature
range. The shift of the maximum of photosensitivity with tam erature
(1o5 - 1.2 R/deg) is smaller than that observed by Bube (1.8 i/deg). The
forbidden band width, determined from the boundary of red photoaonductivity,
Card 1/2

S
10611621000100610111117
Growth of CdSe single crystals and ... B166/BIOI
according to Moss, decreases with an increase in timperature. In the
temperature range of 291 - 780K it narrows down at a rate of 0-00033
- 0.00023 ev/deg. Relaxation of photoconductivity of GdSe single crystals:
takes place at room temperature according to an exponential relation.
Sometimes two relaxation times of the rise in photo-current are observeds
I - 2 and 4 -,8 mseo. The relaxation time of the drop in photoconductivity
is 0*2 - 0.6 msea. 'A'hatracter's note; Complete translation
Card 2/2

20971
S/058/6 1 /Cori /W4/j 18/o42
9,W70 A001/A101
AUTHORt Vishchakas, Yu.K.
TIT-LEt Some physical properties of' cadmium selenide polycrystalline
layers
PERIODICAL: Referativnyy zhurnal. Fizika, no 4, 1961, 321, abstract 4E467 (V
sb. "Elektrofotogr. I magnitografiya!, Vil'nyus, 1959, 220-233,
Lithuanian summary)
TEXT: The author Investigated optical, electrical and photoelectrical
properties of thin (0.1 - 0.3y
,,) polycrystalline layers of CdSe prepared by subli-
mation in vacuum in order to find out whether they are suitable for electrophoto-
graphy. The effect of heat treatment at 5000C In vacuum-apd atmosphere of variou
gases on the-layer properties was investigated. The "surface" and "'Volumetri cyl
refraction'indices were measured in the wavelength range from o.4 to 1,34~L. An
additional absorption detected near 0.68 W is enhanced after heat treatment; it
is ascribed to excitation of excitons. The optical width of the forbidden zone
coincides with the value of activation thermal energy as determined from the tem-
perature dependence of electric conductivity. Prequency dependence of electric
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20971
.Some physical properties of cadmium selenide ... s/o58/6j/ooo/V)4/cI8/rj42
A001/AI01
conductivity is explained by high specific resistivity of crystallites and low in-
tercrystallite resistance. Two components of photoconductivity were detected:
the low-inertia selective one, similar to photoconductivity of CdSe single crystals,
and the inertia non-selective one, related to surface phenomena. Relaxation of
photoconductivity proceeds according to a hyperbolic law with a variable exponent
of hyperbola; this is explained by the presence of several types of local levels
with different effective capture cross sections of carriers. There are 22 referen-
ces.
V. Sidorov.
(Abstracter's note: Complete translation.]
Card 2/2

3 E-11 18 h
S10581621bco1bo41n61iFr,
A061AIG1
AUMOR: Vishchakas Yu K
TITLE: Some optical and photoelectric properties of polycrystalline CdSe
layers
PERIODICAL: Referativnyy zhurnal, Fizika, no. 4, 1962, 42, abstract 4E36)t
(V sb. "FotoeleXtr. I optich. yavleniya v poluprovoenikaRh", Fiyev,
AN USSR, 1959, 74-84)
TEXT: The present results were obtained from a study of the optical,
electrical. and photoelectric properties of thin CdSe layers at different tempez-a-
tures in vacuum, in the air, and in 02, N2, and H2. The causes of "he appear-
ance of an index of refraction on.the surface, which differs from the volumetric
one, are explained. The effect. of the medium. in which the thermal treatment
takes place, and of the deviation from the stoichiometric ratio on the additional
absorption In the 0.68ccrange is examined. It is concluded from the frequency
dependence of electrical conductivity and photoconductivity at different tempera-
tures, as well as from the spectml distribution of photosensitivity, that the
electrical properties of CdSe layers in the 1-f region of the electric field
Card 1/2

S/058/62/c-Go/Gc4/n6/.,6r,
A061/AIOl
come optical and photoelectric properties ...
change are determined by crystals of the polycrystalline layer. The existence
of two types of spectral distribution of the layer photosensitivities is
established. The effect.of gas adsorption and thermal treatment on the electri-
cal and photoelectric properties of CdSe layers is found to be considerable.
[Abstracterls note: Complete translation]
Card 2/2-

WEI. I ~,,:A t~
MITI, TIVITOMW

1, 1- rL
i~nvaqgze(j illumination intensity.
RRONca fuOr ww 4A ~21

L 18o48-66 ;',WT(m)/hTC(f)/M(m)/&1P(t) IJP(c.) RDW/JD/G3
ACC NR: AT6001342 SOURCE CODE: UR/0000/65/000/000/0143/0148
AUTHOR: Vishchakas, Yu. K.; (Lallvidis, N. M.; Matulenis. A. Yu.; Tauraytene, S. A.
ORG: Institute of Physics AN AzerbSSR (Institut fiziki AN AzerbSSR)
TITIX: Study of inhomogeneities in eldctrophotographic layer Ic of selenium
SOURCE: All AzerbSSR. Institut fiziki. Selen, tellur i ikh primeniniye (Selenium,
tellurium and their utilization). Baku, AN AzerbSSR, 1965, 143-148
TOPIC TAGS: selenium, crystal growth, crystal growth rate, photoelectric aabsorp-
tion, photoelectric property, metal physics
ABSTRACT: The distribution of hexagonal modification in selenium photoelectric
layers and its effect on certain photoelectric properties were studied. rxperiments
were perforned-on,vapor deposited selenium (in vacuo--10-3 to 10-5 torr) using alu-
minum substrates heated to 50-95OC; the thicknesses ranged from 10 to 25 W. A con-
tinuous crystallized layer of hexagonal modification was famed at substrate tem-
peratures above 850C, %iiile below this temperature it was disconnected. The spectral
distribution (Al/lT ) of longitudinal photosensitivity was given as a function of
wavelength for rear illumination and for both anodic and cathodic layers;,the re-
Card 1/2

L, M4846
ACC MR: AT6001342
sults were characteristic of a homogeneous hexagonal modification, a maximum occurr-
ing at about 0.7 V. The most continuous layer (substrate temperature of 950C) was
tested by an HOH-4 megameter for sensitivity to illumination resistance as a func-
tion of sample length both for darkness and a constant illumination of 0.15 W/M2.
A schematic representation of the macrostructure- of~ the selenium layer is given.
This macrostructure is related to the inhomogeDaity of resistance to photosensiti-
vity in the modified layers which varied from 11312 to 1018 ohms and which was cal-
:culated from the following formula:
1 1, Sh
f b
where b is the layer thickness along the electric field, p h=104 ohm-m and a =1610
ohm-m are the specific resistances of the hexagonal and amorphous modificatfons of
selenium, respectively, and S h and S are areas of the cross sections. The depen-
dence of photoresistance to dark resTstance was in good agreement with theoretical
and experimental results. The above data were discussed in terms of defects and
holes in the layers and their reactions with electrons. Orig. art. has: 6 figures,
11 table, 1 formula.
SUB CODE: 11, 20/ SUBH DATE: l0Har65/ ORIG REF:' 002/ OTH REF: 003
Card'. 212.~,n7,1-

L 29602-66 EWT (m)/E,'IP (t )/'-'-r 1IJP(-~) JD
Acc n: AT6012819 SOURCE CODE: UR/2910/65/005/001/0109/0114
AUTHOR: Vishchakas, Yu. K - Viscakas, J.; Kavalyauskene, G. S.; Kavaliauskiene, G.
ORG: Vilnius State University im. V. Kapsukas-(Villnyusskiy Gosudarstvennyy
universitet) 6
4/
TITLE: Investigation of dark relaxation of the electrostatic potential in xero-
graphic selenium. 12y2_rs
SOURCE: AN LitSS Litovskiy fizicheskiy sbornik, v. 5, no, 1, 1965, 109-J.14
TOPIC TAGS: electrophotography, relaxation process, dark current, selenium
ABSTRACT: The authors study the effect of temperature on the dark potential reduc-
tion in xerographic layers. The potential relaxation process is studied in selenium
from 10 to 60*C. The xerographic films were produced by vaporizing seienium -in a
vacuum of 5.10-4 mm lig on Duralumin subGtrates. A dynamic elecLrometer wa~; used for
measuring the relaxation in dark potential. An Et:"-I- oscillograph was used as the
indicator at the output of the electrometer amplifier. The potential was measured
one second after charging. It was found that dark relaxation of the potential at
Card 1/3

L 29609-66
ACC NR: AT6012819
various temperatures may be described by hyperbolic curves of the type
V v. (1)
(I+at~2 '
where VO is the initial potential; V is the potential at time t; a and a are paramme-
ters of the hyperbola which depend on the temperature and conditions under which the
layer was prepared. The change in potential for freshly prepared selenium film con-
forms to -two or, occasionally, three hyperbolas. The time for transition from the
first hyperbola to the second depends on temperature. After throe or four months,
the potential relaxation of the layers conforms to a single hyperbola. The drop in
potential is similar for both positively and negatively charged layers, with differ-
ences only in the numerical values of the parameters a and a. Values of a were
found to vary from 0.05 to 0.90. The rate of dark discharge is a linear function of
temperature in most cases. Experimental results showed that instantaneous relaxa-
tion time at the given potential is an exporlential function of temperature and is
determined by the following expression: AE'
19 -,R-.0, '.Cpj,-O(Y)e (2)
Cm- C~Y
where R and C are the effective resistance and capacitance of the layer respec-
ef~ is e
tively. theffemperature, AE is the activation energy, This expression holds
Card 2/3

:-L 2%09-66
ACC NR: AT6012819
,for both positively and negatively charged layers. The activation energy differs
:only slightly for the various,layers and the average is 0.5410.05 and 0.28'0.05 ev
,for positively and negatively charged layers respectively. A theoretical explana-
'tion is given for the experimental results. Orig. art. has: 6 figures, 1 table, 2
'formulas.
~SUB CODE: 20/ SUBM DATE: 15Jun64/ ORrG REF, 002/ OTH RM 002
CAM 3/3

L 33762-66 IJP(c.J' RDW/-?D/ Tq 'AT
ACC NRt AT6012820 SOURCE CODE: UR/2910/65/005/001/0115/0122
J
!AUTHOR: Vishchakas, Yu. K. Viscakas,_J.; Kavalyauskene, G. S. -:- Kavaliauskiene, G.
IORG: Villnyus State University im. V. Kapsukas (VilInyusskiy Gosudarstvennyy
.universitet) -44)
ITITLE: Investigation of complex electrophotographic layers with np and pp / junctions
SOURCE: AN UtSSR. Litovskly fizicheskiy sbornik, v. 5, no. 1, 1965, 115-122
TO?1C TAGS: np junction, pp junction, selenium, electrophotography, majority carrier,
r
minority carrier, photosensitivi 3r..4,F"tjDr)
S 9 t7') 1 CO A..) 0 00 r1 it / r11-1
ABSTRACT: Complex electrophotographic layers of Al-CdSe-Se and Al-Sb2Se3-Se systems
were investigated. The investigation was undertaken owing to the almost complete ab-
sence of data on the effect of pp and I tj.,pns on the p ysical properties of sele-
nium electrophotogra2hic layers. ThdV_]rQPd Mebt2Se 3 laYe were prepared by evapora-
tion in vacuum at 10 3_10-4 torr on a substrate-of D16-TV Eminum alloy. Selenium
layer thicknesses4ranged between 0.5 and 50 V. Selenium (GOST 6738-53) was evapoL,~-_'!
in vacuo at 1*10 torr on Sb Se3 layers; substrate temperatures ranged from +20 to
+850C. Electrical conducti ty and pho sensitivity of the layers were studied in t'he
pbotoresistance regime. Th Al-CdSe-A-31nd Al-Sb2Se3-Pt systems were found to posse~;_-3
an effective specific resistance of 106-109 and 1010-1012 obm-cm, respectively. The
Card

L 33762-66
ACC NRa AT6012820
Al-Sb2Se3-Se and Al-CdSe-Se systems sustained a negative surface charge for about one
bour. Since the selenium layer acts as an insulator in the dark and the dark current
of the majority carriers is slight, the discharge of the systems was thought to be
caused principally by such contact phenomena as injection, exclusion, etc. It was found!
that the potential drop for Al-Cd-Se and A]-CdSe-Se systems slows do" In the dark
and speeds up in the light. The rate of drop In the dark potential in a positively
charged surface decreases owing to the existence of an energy barrier for electrons !.
making the transition from CdSe to Se; the drop is affected by hole drift in a strong
electric field (in selenium) and the lifetime of injected minority carriers (holes in
CdSe and electrons in Se). It is concluded that Al-CdSe-Se and Al-Sbz-Se3-Se systems
may be charged positively or negatively if the selenium layers are deposited an a hot
conducting substrate. Orig. art. has; 4 figures, 2 tables.
SUB CODE: 20/ SUBM DATE: l9Jun64/ ORIG IMF: 016/ OTH REF: 004
Card 2/2' Otc-

L 29608-66 B7T(1)/EWT(m)/EV1P(t)/ETI IJP(c) AT/JD
ACC NR; AT6012822 SOURCE CODE: UR/2910/65/005/001/9~29/0134
AUMOR: Vishchakas, Yu. K.; Viscakas, J.; Vaytkus, Yu. Yu.; Vaitkus, J.-
%- I - - -
ORG: Vilnius State University im. V. Kapuskas (Villnyoskiy Gosudarstvennyy
universitet)
TITLE: Spectral distribution of photoconductivity in polycrystalline cadmium
selenide layers
V
SOURCE. 'AH LitSSR. Litovskiy fizicheskiy sbornik, v. 5, no. 1, 1965, 129-134
TOPIC TAGS: cadmium selenide, photoconductivity, polycrystalline film, spectral
distribution
ABSTRACT: -The spectral distribution of photocondt;(!rtivity parameters was measured in
polycrystalline layers of cadmium seleniTe-with a constant number of incident
quanta. It was found that the photocurrent yield of the specimens is a complex
function of the exposure conditions. Bias lighting gives clear reproducible results.
Relaxation time is independent of incident wavelength for a constant photocurrent
and the minimum relaxation time corresponds to maximum stationary photocurrent. The
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L 29608-66
ACC NR: AT6012822
initial differential instantaneous relaxation time is independent of wavelength at
high frequencies and increases at lower frequencies. The selectivity of spectral
distribution is not significantly affected by an increase in light intensity. Sta-
tionary bias lighting reduces selectivity of the spectral distribution by increasing
the photosensitivity in the short wave region and reducing it in the long wave re-
gion. Maxima in the photoconductivity sometimes appear when the light intensity is
increased. The spectral distribution of the photocurrent yield and relaxation time
may be due to additional fast recombination centers on the surface and within the
layers. The maxima in photosensitivity are due to the structure of the valence
band. An increase in the dark conductivity of the layers increases the absolute
stationary photocurrent which may be due to filling of capture levels without hole
injection. The injection of holes by stationary bias lighting reduces photocurrent
since there is an increase in recombination through the electron-filled capture
level. This effect is stronger in the case of volume absorption which indicates an
increase in recombination speed within the layer. Orig. art. has: 5 figures.
SUB CODE: 20/ SUBM DATE: 1BJun64/ ORIG REF: 006/ OTH REF: 004
Card 2/2 (-1 b

L 39663-66 nz- /z-r-(Pf 4-
ACC XR: AT6001343 SOURCE 0 r: URZOboo&IdWXW~1614910156
'AUTHOR: Hat lenis, A. Yu.; Vishchakas Yu. K.; Yushka G. V.-, Gallvidis,,11. M.
ORG:
TITLE; Unipolar longitudinal photocondut~tivity of electrographic selenium films
SOURCE: NJ AzerbSSR. Institut fiziki. Selen, tellur I 1kh primenenlye (Selenium,
tellurium and their utilization). Baku,~M AzerbSSR, 1965, 149-156
TOPIC TAGS: selenium, semiconductor conductivity, drift nobility, temperature de-
pendence, metal physics
2. 1.
ABSTRACT, Unipolar electrographic pronrtles (higher initial potential or photo-
sensitivity for chaxi-e-0-1 a single sign) of Se films were studied. The specific
Arift length (IAT) was related to these properties by the relation:
+ IjhTh/M 1r of
whom Ai+ Is the phatocurrent at the Illuminated anode, hi_ Is the photocurrent at
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.L 39663-66
ACC NR: AT6001343
the illuminated cathode of the same electrodes Peg Ph are the mobilities of the
electrons and vacanciess and i Th are the respective lifetimes. A schematic of the
apparatus used for measuring the relative photocurrents (Y) Is given. Amorphous
and crystalline Se films of 0.8 to 1 am thickness were used. This thickness was
much greater than the drift length but such less than the reverse coefficient of
saturation. For small voltages, Y Increased linearly with voltage for the anorpbou3
Se, while at higher voltages it saturated rapidly. The specific drift lengths of
the carriers were calculated to be 1.7-10-11 u2/v (electrons) and 2-10-10 m2/V (va-
cancies). The effects of crystallization (hexagonal modification) were studied by
caMaring the spectral distribution of I for.both amorphous and hexagonal Se. The
amorphtno film had such higher values of Y at the lower wavelengths (0.4 to 0.6 v)
but went through a transition at 0.7u and dropped below the hexagonal; the hexagon-
al had the opposite relationship: it rose with wavelength and saturated at 0.7p.
A micrograph (10000 is given of an Initially amorphous film which was subjected to
a temperature gradient (100C an one face and 900C on the other). The specimen was
fractured at the interface of the amorphous-crystalllne boundary. Further data are
given for the dependence of the longitudinal photocurrent on the temperature of the
vaporizing So substrate. For temperatures beltm 850C, the value of Y increased
sharply due to weaker vacancy injection. An explanation of the results based an
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-;'S
'63 -1,6
A~C'NR: AT6001343
special distribution of electron charge and vacancy injection is piven. The best
sensitivity and lowest dard currient were obtained at substrat, temperatures of 850C.
However, Impurities in the Se lowered crystallization and Intcrfer-ed with gettirig
these ODtimal rnndgtlons. Orig. art. Ws: 5 figures, 2 tabl'?s, 5 fannulas.
SUB CODE: 11, 20/ SUBM DATE: IOMar65/ ORIG Pxr: oo,)/ OTH PEF- 007
Card 3/3

L 05688-67 Ma (1) /&T (M) /&T(t) IET IIJP(c) AT/JD
ACC_ WRt AT6012621 -SOURCE CODE: UR/2910/65/005/001/0123/0121
AUTHOR: -Vishchak", Tu. K. -- Vi;4akas, J.; Vaytkus, Yu. Yu. -- Vaitkus, J.
ORG: Vil at Imeni V. Kapuskas (Villnyusakiy Gosudarstv'ennyy uni-
vorsiieiT
TITLE: Effect of background lumination on the steady state photoconductivity of
polyerystalline OdSe layers
7 F37
SOURCE: AN LftSSR. Litovskiy fizicheskiy abornik, Y. 5, no. 1, 1965, 123-128
TOPIC TAGSt photoconductivity, photoconducting film, cadmium selenide
ABSTRACT: The differential phot urrent output and the relaxation time of the expo-
nential segment of the Dhotocondu Livity curve were measured in CdSe layers In order te
determine the Intensity background illumination on the photoconductivity of the sam-
ples. The thickness of the CdSe layers varied from 0.3 to 1.0 V. Heasumments indi-
cate that recombination occurs across traps with activation energies of 0.28i 0.23 and
0.12 ev. Crig. aft. hast 3 figures, I table, 2 formulast
SUB CODE: 20/ SUMN DATE: lGJun6#/ ORIG NEF: 007/ OTH REN 005
rcard i/1

(t)/,.T !JP(c)
co-549-6'7 F*,~T w ?. -, ! JD
ACC M.R. ARG031887 SOURCE COD!-1':___UR/0058 /GG/000 -/0 0-G/E005/E0-95
AliTHOR: Wkytku-S, Yu. Yu. ; Vishchakas, Yu. K. Persianov, I. S. ; Smilga, A. A.
TITLE': Photoconductivity anisotropy of cadmium sclenide single crystals
:SOURCE: Ref. zh. Fizika, Abs. 613743
,REFSOURCE: Lit. fiz. sb., v. 5, no. 4, 1005, 401-404
TOPIC TAGS: cadmium sclenid e, cadmium selenide photoconductivity,
photoconciuctivity anisotropy
ABSTRACT: The anisotropy of photoconductivity in CdSe single crystals is investi-
gated. In the (1010) plane the photoconductivity relationship in the direction of axes
a and c is 2:1, while in the (0001) plane anisotropy varies periodically as a function
of the shape ot the crystal cross-section. [Translation of abstract]
SUB CODE: 20
Card 1/1 nat
t

L 46938-66 EWT(1',/EWT(m)/FWP(t)/f-,r1 IJP(c) --JD/AT
ACC NRi AP6015492 tfit/0181/66/008/005/1616/1617
JAUMOR: Vishchakas, Yu.'K.; Yushka, G. D.; Petravichus, ".; Matulenis, A. Yu.
ORG: Vilinyus State University im. V. ~Meukas (Viltnyusakiy goeudarstvapyy univer-
sit9t)
TITLZ: The kinetics of forward-photocurrent limited by a "tial charge In amorphous
selenium
SOURCE: Fizika tverdogo tela, Y. 8, no. 5, 1966, 1616-1617
TOPIC TAGS: selenium, photoconductivity, current carrier, bole mibility
ABSTRACT: Amorphous Se with a specific resistivity of 1010 ohmen, a hole drift of
>10 7 M2/V, a quantum yield of 0.1 to 1 (photon energy 2.5 to 3.0 ev), and a free-to-/
-captured-holes ratio of >0.01 was examined. The experimental equipment included a
pulse light source (ISSh-15, ISSh-100-3), a mcnochromator, and an oscillograph Unputi
impedance 10 kohm, and capacitance 50 picofarad). Photocurrents were generated by
constant voltage and by intermittent light. The density of the maxinum photocurrent,:
depends on the voltage, according to
.9 us
1.21 - W69JAW,
card 1/2

where c is the relative dielectric constant, co is the dielectric constant of the vaoul
m , v is mobility, U is voltage, and d is the specimen thickness In the diraction of
the electric field. A possible break in the curve and further linear Increase at high
voltages indicate that the divergence of the hole current reaches the generation tes'po
of the carriers. The detemined quantum yield agrees with the results obte nod by
other authors. The calculated curves correspond to a hol*,mobility V a 1.4!10-5 nT/ve
-sec. Trapping and r*combination in the specimens are insignificant. Orig. art. hasi
2 figures, 2 formulas.
SUB CODE: 20/ SUBM DhTE: 20S*pSS/ ORIG REF., 001/ OTH REFt 005
Cord 2/2

ACC NR. ARG035047 SOURCE CODE: UR/0058/66/000/008/Dl20/Dl20
AUTHOR: Beltryshaytene, V. P.; Vishchakas, Yu. K.; Parkhomenko, M. V.
TITLE:* Relaxation of longitudinal photoconductivity of electrophotographic layers
SOURCE: Ref. zh. Fizika, Abs. OD935
REF SOURCE: Sb. Elektrofotogr. i magnitografiya, Vilinyus, 1065, 17-25
TOPIC TAGS: photoconductivity, electrophotography, electrophotographic layer,
'longitudinal photoconductivity, relaxation, photography, zinc oxide, eosine
sensitizer, stickiness
ABSTRACT: An investigation was conducted of the volt-ampere and lux-ampere
characteristics of longitudinal photoconductivity (PC) in electrophotographic zinc
oxide layers (binders: polyvinyl-butyl aldehyde) sensitized with eosine. The
former were found to be linear under low stress and saturated under higher stress;
the latter were found to be linear. The increase in PC occurred either along the
hyperbola and exponent, or along the parabola and exponent, depending on the
history of the sample, the concentration of eosine, and the applied stress. The
decrease in PC occurred along the hyperbola, first with an index of /, I and then
ard 1/2

ACC NR- AR6035047
> 1, these indices further more, dependeded on the level of illumination, the
concentration of eosine, and the applied stress. The parameters M (concentration
of trapping levels), N (effective density of states in the conductivity zone,
c
'R, and (distance of levels M from the bottom of the
reduced to the M level
conductivity zone) were determined from the initial sections of photocurrent
increment curves. Values obtained for different samples were 107-1010 cm-3,
6
_109 cm-3
10 and 0. 52-0. 55 ev. The effect of the sensitizer on the formation
and position of trapping levels is discussed on the basis of the data obtained.
A. Kartuzhanskiy. [Translation of abstract] [SP]
SUB CODE: 20/
C.rd 2/2

T, '99987-66
2825 SOURCE CODE: UR/2910/65/0%)5/001/0154/0156
AUTHOR: Smilga, A. A.-Smilga, A.; Vishchakas, Yu. K.--Viscaka.%, J. _~q
ORG: Vilnius State University im. V. Kapsukas (Vil'nyusskiy Gosudarstvennyy
universitet)
TITLE: High-voltage photovoltaic effect in cadmium selenide polycrystalline films
SOURCE: AN LitSSR. Litovskiy fizicheskiy sbornik, v. 5, no. 1, 1965, 154-156
TOPIC TAGS: photoelectric effect, photo emf, cadmium selenide
ABSTRACT: Larger-than-gap photovolta reachinq more thal 0 v per 1 cm of sample
length have been discovered in cadmiu!~sel,nid.Qhin films.~ The samples were prepar
by vacuum evaporation, with the temperature of the glass ~`ubstrate varied between
+20 to 250C, and the angle of deposition from 0' to 75*. The value of the photo-
voltages depends strongly on the angle of deposition and on the thickness of the fil
and is directly proportional to the size of the samples. The polarity of the emf
depends on the position of the substrate with regard to the molecular beam, with the
+ sign present on the substrate's far end. Orig. art. has: 2 figures. [ZLI
SUB CODE: 10/ SUBM DATE: 16jun64/ ORIG REF: 008/ OT11 REF: 005/ An PRESS!
-Z3 7

L 1118-66 EVIT(1)/EViT(M)/ETC/EVIG(m)/T/BYP(t)/EWP(b)/EWA(c) IJP(c) RDW/JD/GG/GS
VCCESSION NRs AT5020482 UR/0000/64/000/000/0362/03U
AUTHORSi Vishchakao.Yu. K..; Smij& Le A* -
V41, 5 -) -941
TITIEs Contact resistance of cadmium selenide and an electrode
'1'7 -x 7
SOURCE: Mezhvusovskaya wuchnomekhnichqykaj~ konferentslp _pp
dnikov (poverkhnostnyye i kontaktnyye yavleniya). Toms
poluprovo k. 1962.
Poverkhnostnyye i kontaktnyye yaYl Dlya v p-oFti~r od-nM7&-(Si-1r1-sc~ and contaot
phenomena in semiconductors), Tomsk, Izd-vo Tomskogo uniyw 1964, 362-371
Y/. 5
TOPIC TAGSt cadmium selenide, contact resistance, photoconductivity,, silver,
I -gold, Aluminum indium gal-lium eingfte cMtal
ABSTRACT: 6olitact reze?stanco'b6tween an electrode and CdSe and the methods of
obtaining an oncontact were investigated in the kinetic study of tke pbala-
conductivLty7b C( a. Preparation of polycrystalline film of CdSe arxT:app3-ica-
I tion of electrodes have been described by Tu. K, Viahchakasp A, A, Saigla, P,,?e
Brazdzhyunas (Uchenyye zapiski Vilinyusakogo gosudarstvemogo universiteta,, 33,
139, 1960) and also by P, Po Brazdzhyunas and Yu, K, Vishchakas (Trudy AN Lite
SSR, seriya B4, 21t 1956), One portion of polyarystalline film =demnt
;I Card 113

L 1118-66
ACCESSION NRt AT5020482 C)
thermal treatment. Ag. Au.. Al, In,, and Ga electrodes vere applied by evaporation I
in vacuum. Irradiation of the specimens with electrons or ions vad conducted in
a gas-discharge tube fed by a high voltage rectifier. By using a proper dia-
phragm it was possible to irradiate either the total surface of tho semiconductor
or only the subelectrode region, The contact resistance of the specimens was
determined by the ratio Ra where R is electrical resistance measured
0
R3
by the usual method, and R Is electrical resistance measured by the double-
3
sounding method. Au. Ag, and Al electrodea and the film form a stable, time-
independent contact resistance, which constituted about 60% of the resistance of
the film for the contact Au-Cdge, 20% for Al-CdSep and 10% for Ag-CdSe. Ga and
In electrodes plus GdSe formed a time-dependent contact resistance constituting
about 30% of the film resistance for In-CdSe and Ga-CdSe. To obtain an ohmic
contact of CdSe single crystal and an electrode# the aubelectrode region was
bombarded with a glov discharge and was covered with an evaporative film of In
and then with an In amalgam (95% In + 5% UZ), The observed phenomenon of the
ohmic contact was previously explained by the model of F, A, Kroger, G, Diemer,
and H. A. Klasens (Phys. Rev, 103p 2790 1956)o Orige arte bass 3 tables and
A+ figures.
card 2/3

L 1118-66
ACCESSION RRi AT50204&
j ASSOCIATIONt Kaktadm f isiki polaprovodnikovs, Vill r4uo*iy gosunlyaraitat bu
K4mdcasa (Department of - Abiqlaouftctor ftoicttp VlUluo Stato University)
SUBMITTEM 060at64
NO RZY BOVI W9
ZNCL# 00
SUB COM SC
OTHIM 007

L 2671-66 a-iT(1)/&,T(m)/-r-wPM/EFF(, )~'J"IPUWLTC/T IjP(c)
-0
, -IIJDIV~116GIGS
ACCESSION NR: AT5020483 UR/0000/64/000/000/0372/0379
44' q q,
:AUTHORS: Vishchakas, Yu, K,,; 116~~shisj A, S. I Stonkus, S. 1.
P, 4
~TITLE3 Effect of gas sorption upon the electroconductivity and coefficient of
cadmium selenide films
SOURCE: Mezhvuzovskaya nauchno-tokhnicheskaya-konferentsiy,a po fizike
:poluprovodnikov,,(.poverkhnostnyye i kontaktnyye yavleniya). Tomsk,-19~.
'Poverkhnostnyyd'i kontaktnyyo yavloniya v poluprovodnikakh (Surface and contact
phenomena in semiconductors). Tomsk.. Izd-vo Tomskogo univ., ~964, 372-379
~TOPIC TAGSt sorption, electroconductivity, light reflection coefficient, cadmium
selonide, oxygen,, nitrogen h dr on
y 0Z
4
tABSTRAM Electroconductivitylof polycrystalline film of cadmium selealde was
:,studied iii vacuum and in oxyg n,, nitrogen, hydrogen,, and air atmospheres. This
,is a summary and an extension of previous publications by the authors in which
;the effect of the above gases upon the electroconductivity., light sensitivity,
band coefficient of light reflection was discussed, It is stated that the
C,,d-V3

L 2671-66
ACCESSION MR: AT5020483
coefficient of reflection depends largely upon the gaseous medium which causes the
greatest changes in the electroconductivity. Specimens were prepared by evapora-
tive deposition of CdSe in vacuum on glass with attached electrodes, The setup
and the method of measurement were described earlier by Tu, 1, Vishchalts and A,
Medeyshis (Uch. zap. Vi1'zWwskog6 gosuniv.., 33., 162,, 1960). The wasurements
were taken without removing the specimen from the vnemm, The contact potential
differential was measured by means of a vibrating condenser which also served for
measuring electroconductivity. The coefficient of the light reflection was m*As-
ured with a polarizimg gonicneter. AU the measurements were performed at room
~texperature. It was found that electroconductivity of the Mms. prepared at 10-6
nm 11g is comparatively large (1 ohzi4cxi-1),, but is considerably smaller (10-6oWl
car) for those prepared at W3 mm E[g. Among the gas" studied the greatest
effect was obtained with %,, which considerably decreased tbo conductivityp while
nitrogen had no effect. The ratio of electroconductivIty In vam= to that In air
varies inversely with the thickness of the film and depou& upon the proomwo at
which the specimen was prepared. The work function was fomd to 1narea" co=w-
rently with decreased slcctzvconduct1v1ty in dry &1r 4M o.V&*n# APSUlar function
of the light reflection coefficient in vactum and In air was studied In polarized
2J&t, but the valms obtainod for the cbavges in the ref2sation coefficient, could
not be carTelated vJLth those of skin conductivityo ftrtbar experlwate ohovM
C-rd,2/3--

L 2671-M
4CCESSION KR: AT5020483
be conducted in this field, taking in account volume conductivity as well as the
.presence of a transition layer. It is assumed that the variations of quasi-skin
conductivity are the most important factor in changes occurring JM the coefficient
~of light reflection. Orig. art. has: 4 figures, 1 table, and 7 formulas.
A=r,j=jOjNs Villnyusskiy gosudarstvennyy universitet in. V. Kapsulmsa,
,Kafedra fiziki poluprovodnikov (Vilnius State University, Department of Physics
wof Semiconductors)
ISUBMITrED: 060at64 ENCL: 00 SUB CODEt SS9 GG~
:NO REF SOV: 007 OTHER: 002
Card 3/3".A1

VISHCHU~~~N.V.
Wastes of the chemical industry of the Armenian S*S*Ro used as
larvicides. Izv.AN Arm.SSR.Biol.i sellkhoz.nauki 8 no.5:75-81
W '55. (XLVA 9:8)
(Flies) (Armenia,-Chemical industry--.By-products)
(Insecticides)

BORDARENKO, T.H.-, GORBOV, V.G. [Horbov, V.Hj-, KOKAROV, I.Z.-, VOTTOVICH,
O.S. [Voitovych, o.s.1; KmiNsKiT, F.T. flaminalkyi, F.T.];
TAKOVUVA, Te.O. (IAkovlieva, I.S.O.]; TAKOVOT, S.B. CIAkovliev,
S.B.1; TAVONENKO, O.Ts. CIAvonenko, O.IA.1; VISOMMp.-I.A... red.;
ALIKSANMOV, M.O., tekhn.red.
(Our territory; brief guide-reference book] Nash krai; korotkyi
putivnyk-dovidnyk. Mykolaiv, Mykolsivalke obl.upr.kulltury,
1958. 94 po (MIRA 13:2)
1. Nikolayev. Oblnetnyi kraieznnvchyi musei.
(Nikolayev Province--Guidebooks)

VISHKBSKIY, Ta.D.
r ;,
Meckel's diverticulux pathology. Ihirurgiia. Moskva no. 2:48-,f2
Fab 1953, (CUL 24:2)
1. Of the Surgical Division. Kurgan Oblast Hospital.

KARANIZYMV, K.B., doktor tekhn.nauk, prof.; VISHEIICHUK, I.M., starshiy
nauchnyy storudnik; SHERZYWITIV, V_37__"~- ~_
Electronic phase-angle meters used for recording measurements and
oocillograms of the angle of overshoot of synchronous machine rotors.
lav. vyz. ucheb. zav.; pri. no.1:22-27 158. (MIRA 11:5)
l.Livovskiy politekhnicheskiy institut. 2. Chlon-korrespondent
AN USSR (for Karandayev). 3.Nauchno-iosledovatellskiy- saktor
Ltvovskogo politakhnicheakogo Instituta (for Vishenchuk), 4.Starshir
inzhener Institute, mashinostroyeniya AN USSR (for Sherametlyev).
(Electronic instruments)

--in
VISHINCHUK, I.M.; KOTYUK, A.F.; SHERZMET'YXV. V.A.
Blectronic phase-measuring instruments used in industrial
frequency circuits. Izm.takh. no.2:58-59 Mr-Ap '58- (MIRA 11:3)
(Blectronic instruments)
Im
v

VISHENCHUK, I.M., inzh.; KOTYUK, A.F., inzh.; SHEREMET'YEV, V.A., inzh.
~7 ~~
Device for measuring and oscillographing the runaway angle of
-synchronous-machine rotors. Blek. eta. 29 no-7:43-45 JI '58.
(MIRA 11:10)
(Electric machinery, Synchronous--Measurement)

9(4, 6) PHASE I BOOK EXPLOITATION sov/1985
Vishenchuk, Igor' Mikhaylovich, Yevgeniy Panteleymonovich Sogolovskiy,
9.nd Bent-s-lo-n--Ibs-fro-v7l-ch-Zh--Vetskiy
Elektronno-luchevoy ostsillograf i yego primeneniye v izmeritellnoy
tekhnike (Cathode-ray Oscillograph and Its Use in Measuring Tech-
nique) Moscow, Fizmatgiz, 1959. 220 p. 10,000 copies printed.
(Seriesi Fiziko-matematicheskaya biblioteka inzhenera)
Ed. (Title page): K.B. Karandeyevj Ed. (Inside book)t A.I. Kostiyenkoj
Tech. Ed.: N.Ya. Murashova.
PURPOSE: The book is intended for engineers, scientific personnel, and
graduate and undergraduate students engaged in the design and opera-
tion of electronic measuring equipment.
COVERAGEs The authors discuss the principle of operation and construc-
tion of low-voltage cathode-ray oscillographs. They also describe
methods of design and measurement with the aid of oscillographs.
The authors thank R.S. Kravtsov and N.M. Kogan for reviewing the
text. There are 33 references: 31 Soviet (including 9 translations)
and 2 English.
Card 16

Cathode-ray Oscillograph (Cont.) SOV/1985
TABLE OF CONTENTS:
Foreword 5
Ch. 1. Block Diagram of a Cathode-ray Oscillograph 7
Ch. 2. Cathode-ray Tube 10
Principle of operation of a cathode-ray tube 11
Slectron gun 11
Deflecting systems 19
Screen 26
Special cathode-ray tubes 30
Ch. 3. Sweep 32
Saw-tooth voltage generators 33
Thyratron oscillator 37
Slave sweep thyratron oscillator 41
Example of calculation of a thyratron oscillator circuit 41
"Pakkl" oscillator 44
Slave sweep "Pakkl" oscillator 52
Selection of tubes and procedure for calculating circuit
elemeiitB 54
Multivibrator with capacitive cathode coupling 56
'
Synchronization 60
Card 2/5

Cathode-ray Oscillograph (Cont.)
Ch. 4. Amplifiers
A-c amplifiers
Output circuits
Amplifier stage with a noncompeneated plate load
Compensation for low-frequenoy distortions by means of
a filter
Compensation for frequency distortions by means of a
negative feedback
Inductive compensation
Amplifier input circuits
D-c amplifiers
SOV/1985
Ch. 5. Auxiliary Elements of a Cathode-ray Oacillograph
Voltage stabilizers
Electromagnetic stabilizers
Example of calculation of an electronic stabilizing circuit
Calibration
Time divisions
Delay lines
68
70
71
77
80
86
93
98
100
108
108
log
116
12~
13
140
Card 3/5

Cathode-ray Oscillograph(cont.) SOV/1985
Electronic switches 142
Blacking out the return sweep. Modulation of brightness 148
Photographing oscillograms 149
Ch. 6. Applications of a Cathode-ray Oscillograph 156
Measurement of voltages 156
Measurement of resistance 16o
Measurement of power 163
Measurement of frequency 166
Measurement of phase 171
Analysis of characteristics of tubes and semiconductor
devices 176
Analysis of amplifier characteristics 182
Measurement of the degree of modulation 188
Analysis of pulses 193
Obtaining a magnetization curve 196
Measurement of pressure 198
Checking of gears 199
Testing of camera shutters 199
Representing three-dimensional objects on the screen of
an oscillograph 201
Card 4/5

Cathode-ray Oscillograph (Cont.) SOV/1985
Appendix 1. Example of Designing the Basic Units of a
Cathode-ray Oscillograph 204
Appendix 2. Characteristics of Some Types of Domestic
(Soviet) Oscillographs 216
Appendix 3. Basic Parameters of Electrostatic Cathode-ray
Tubes 218
Bibliography 219
AVAILABLE: Library of Congress
JP/ad
Card 5/5 8-28-59

S/263/62/000/011/019/022
1007/1207
AUTHOR: Vishenchuk. 1.
TITLE: Reduction of measuring errors in two-channel phase angle meters
PERIODICAL: Referativnyy zhurnal, otdel'nyy vypusk. 32. lzmeritet'rtaya tekhnika, no. 11, 1962, 52-53.
abstract 32.11.396. "Nauchn. zap. L:vovsk. politekhn. in-t", no. 78, 1961, 5-52
TEXT: Among the errors (E) inherent in electronic phase angle meters, most important are methodical E;
E connected with inaccuracies in the determination of the moment of transition through the zero point of the
function to be found (in phase-angle meters provided with limiters); E, appearing in the phase measuring
circuit; and errors of the output measuring device. Each of the error sources is given ample consideration, and
methods are suggested for the reduction of E in the amplifying-limiting system by using cathode-coupling
limiters supplemented with positive and negative feedback circuits. The most efficient method of reducing
errors in phase-measuring circuits is the use of bipolar circuits which compensate for the shift of the zero
line. The I:vovskii politekhnicheskiy institut (Lvow polytechnic Institute) designed a bipolar trigger circuit
for two phase-angle meters that ensures maximum accuracy and stability of readings. Thus, for instance,
the low-frequency phase-meter for a frequency band ranging from 10 c to 100 kc has a measuring crr or
not exceeding 1.5% of the scale range, for scales of 25*, 50*, 100' and 180% this gives an accuracy of
0.75*, 1.5*, Vand 5* respectively. The dynamic range of the device is 0.3 to 50 v. Another type of phase-angle
Card 1/2

Reduction of measuring errors in...
S/263162/000/011/019/022
1007/1207
meter has been designed for infra-acoustic frequencies with a frequency band ranging from 3-1000c.
Complete description is given of tho phase meter circuits considered, and the error sources are analyzed
The design of the most important phase meter components is studied and their distinctive features are com-
pared. There arc 16 references.
[Abstracter's note: Complete translation.)
Card 2/2

VISIMICHUK, Igor' MIikh&Yjoyjch: KOTYUK, Andrey Fedorovich; MIZYUK,
onid Yakovlevich; LYUSTILORG, V.F., red,; YEMZHIV, V.V.,
tekhn. red.
(Electroyechanical and electronic Phase meters] Elektrome-
khanicheskie i elektronnyo fazometry. Moskva, Gosenergoiz-
dat 1962. 206 p~ (MIRA 15:7)
~Electric measurements) (Electronic measurements)

VISMAKOV, S.
Test pilots yym'Pnl 11 no.13:5-7 JI 1103. (14IRI, 1219)
jAirplanen-Flight tnatine

--V141W OV inzh.-mayor
Inventor of h7droplanes. Vympal 11 no.11:19 Js 148.
(MIRA 12:9)
(Grigorovich, Dmitrii Pavlovich)

e
VISHEWKOV, S.
ISPYt8teli. 140skva, Voenizdat, 19h9. 182 D., illus.
Title tr.: Test pilots.
TL5hO-V57
SO: Aeronaittical Sciences and Aviation in the Soviet Union, LibrarT 6f
Congress, 1955.

VISHENKOVi
ii-40ATT-15--
USSR/Aeronautlos Feb 49
Aircraft - Design
Blograpky
"An Outstanding Constructor of the Soviet Multi-
angined Airplane," S. Vishenkor, Ingry 5 PP
"Test Vozdush Flota" No 2
Briefly describes achievements of Audrey Nikolayevich
Tupolev, one of foremost Soviet designers of multi-
angined planea. Gives educational and practical
background. Sketohily describes some of the more
famous of his 80 plane designs. Awarded Order of
Lenin In Jan 49.
no 40Aqr15

, S.
Aleksandr Mozhaiskii, Moskva, Voennorizdat, 1952. 12? p.
SO: Monthly List of Russian Accessions, Vol 7, No- 8. Nov. 1954

Outstanding Russian sclentist. Sov.mor.15 no.7:15 AP'55-
(MIRA8:10)
(Ko2hainkii, Aleksandr Fedorovich, 1825-1890)

VISIUMOV, S.A.; VEM-11TSINA, V.I.
Hardening machine part surfaces by chemical nickel plating,
Trudy Sem.po kach.poverkh. no-5:146-155 16J.- (MIRA 15:10)
(Nickel plating)

1K, V
Subject USSR/Aeronautics - maintenance
Card 1/1 Pub. 135 - 13/31
Author Vishenkov, S. A., Eng.-Lt.Col.
AID P - 4755
Title How to prevent corrosion In Oircraft parts
Periodical Vest. vozd. flota,.1 8, 52-59, Ag 1956
Abstract The author describes in detail the cause of corrosion
and how to prevent the corrosion of various parts of
aircraft. Three Illustrations. The article Is of
informative value.
Institution : None
Submitted : No date

S/129/62/000/012/007/013
E193/9383
'AUTHORS.- Viahenko
V. SAA.._~Candidate of Technical Sciences,
Gostenina, V-M., Yekatova, V.S.9 Faykina, L.A. and
Filimonova, L.V.9 Engineers
TITLE: Electro-less nickel-plating of soldered aluminium parts
PERIODICAL: Metallovedeniye I 'termicheskaya. obrabotka metallov,
noo 12, 1962, 33 - 36
TPM: The object of the present investigation was to explore
the possibility of improving the corrosion-resistance of soft-
aoldered joints in aluminium and aluminium alloys by means of
electro-less nickel-plating of the alumAnium parto before soldering.
The optimum thickness of the nickel dejosit was determined in th:ut
first stage of the investigation. The'experiments were carried ~
on AMr (Al~g), AM, (AMts), 41 (Dl) and 0~16 016) alloys. Flat
test pieces were cleaned with emery paper, washed in kerosene at
40 - 50 OC, dried, degreased with French chAlk, rinsed in cold-
water, pickled for 1 min in a 25% solution of` sulphuric acid at
70-75 OC, rinsed In cold water, given a bright dip (12-15 see) in
a Isl solution of nitric acid and rinsed agil:u in cold water*
Card 1/4

S/
Electro-less nickel-plating; 29/62/000/012/007/013
some El 3/E383
After depositing a coatini 6f Zn by a 15-see dip in a solution
containing 500g/l. sodium.hidroxide and 100.g/1. zinc sulphate
y
(at 20-25 OC), followed by a thorough wash in running water, nickel-
plating was carried out iri 'a bath of the foilowing composition:
nickel chloride 21 g/l.; '*sodium hypophosph*to* 24 g/l.; ammonium
chloride 35 g/l.; citrie'a id 25 g/l.; 25% .NhOH solution
30-70 ml./l.; pH of the balh was 8.3 - 8 51'an its temperature
80-85 OC. 'the rate of nj~ke'l deposition ~as" 12 - 15 ~L/h at a
charging density of 02 dm /1. The specimens were held, after washing
and drying, at 200 C for 2 hours to improve the strength of the
bond between the aluminium Alloy and the ni6kel deposit. The
corrosion-resistance of various test pieces-ifas determined by
measuring the loss in weight after a 160-hour test in a V.,, solution
of sodium chloride at room temperature. The minimum weight loss
(0.002 - 0o003 g) corresponded to the folloviing thickness of the Ni
,~deposits: 15 em 16 -0 on alloy AMg; 22-23 1L,f6r alloy AMts;
24-25 iL for'alloy Dl; 28-56 0 for alloy D16. In the second stage
.of the investigation the ~orrosion-resistan~e of the soldered
joints was determined. Sirips of the alloy D1, nIckel-plated to
:a depth of 1-3, 5-10 and 19425 tL, were joined with no &-61 (pos-61)
Card 2/4

~S/129/62/000/012/007/013
Electro-less nickel-lating E193/r,,383
solder under a zinc chloride/ammonium chloride flux. Similar test
pieces were proparea using unplated DI strips soldered by the
abrasive technique irith the tin-zinc eutectic. The corrosion tests
(of 30 days duration) wei~e carried out in a 30,0' sodium-chloride
solution whose temperature wAs raised each*day to boiling point and
kept there for one hour. The.extent'.of corrosion was determined
determined by measur3.ng the 4trengtti of the soictered Joints nefore
and after the tests. Joints made in unplated specimens started to
---lose thei-r-:i9trength-h ft-er, and had no load-
carrying capacity after 7 days. Joint'N made on'specimens nickel-
plated to a' depth of 18,- 25 ji were the,most resistant to corrosion;
their strength before and after corrosion tests was 4.8 and
4'.7 kg/mm2t respectively. Comparativd tests of one-year duration,
conduct.ed.:kn a_3~' sqdium-chlor_ide sqjUtion, in a humidity chamber
and in outtloor and indoor atmospheres Yielded similar results.
Complex tomponertts of various wireless equipment made by soft-
-soldering vickel-plat ed A A 1 (ADl) , DI land D16 alloys pSss ed
the following tests satisfactorily: 4-hour'test at -50 C;
testIng for,resistanco to frost and condensation (2 hours at
-20 C)- stability at'ele'valted temperaiturbs 610 hours at 50 'CI
Card 3/4

5/129/62/000/012/007/013
E,Ioctro-losLi nickol-plating r-,193/E383
1
4 hours at 65 OC); resistance to humidity (30 days at 30 *C with
humidity of 95-98c,",)- It iva~ concluded that'preliminary electro-
less nickel-plating was the most promising method of ensuring good
corrosion-r,asist-ance of soft-soldered joints in aluminium alloys.
Card 4/4

21~g,1100010
3/12 1010061016;
Aoo4/Aio4
AUTHORSt Borisov, V. S., and Vishenkov, S. A.
T=- The effect of chemical nickel plating on the fati*ue strength of
parts
PERIODICAL. Referativnyy zhurnal., Mashinostroyenlye, no. 10, 1961; 86, abstract
1OB607 (V sb. "Povyshenlye iznosostoykosti I sroka sluzhby mashin.
v. 2", Kiyev, AN UkrS3R, 1960, 214-219)
TEXT: The authors present the results of investigating the effect of
chemical nickel plating on the fatigue strength of parts. It is shown that the
chemical nickel plating of steel spealmahs without subsequent heat treatment
practically does not lower the fatigue strength. -In 'the, field of limited endurance
the fatigue strength of niokel-plat6d specimens Is reduced considerably. After
tempering at 4000C for one hour anda~niokel coat of 0.03 mm on the sides, the
fatigue strength is lowered by 45%. Chemical nickel plating inoreases the fatigue
strength of the Al-4 aluminum alloy with a nickel layer thickness of 0.03 mm on
the sides up to 38%. N. Savina
[Abstractor*s note: Complete translation]
Card 1/1,

J Uo 24&Y-) S/137/61/000/005/060/060
A0061AI06
AUTHM Vishenkov, 5. A.
T TME Raising --he wear resistanse of ferrous and non-ferrous metad
components by the method of chemical nickel plating
PMODICALt Referativnyy zhurnal, Met-allurgiya, no. 5, 1961, 67, abstract
5T515 (V sb. "Povisheniye izosos-~oykoati I aroka sluzhby mashin",
111. 2, Klyev, AN USSR, :960, 220-228)
TM - ie on o,,' N-1 b,~ ~hn method was st-Idied. C11, Fe
and their allo7js were nloXel-plated. 'Ihc mt-thod Is val-~abls beowasa of' its
applicabilit.v to A! alloys. of iLn alkaline sol'ution .13 given
In 9/1) . N 1,31 e
2- 24 -~4'rlc acid Na V- NH 30; A12
(S04)3 - 0.32 and ~F'401' ~2~j MI/I. r;es-, trea~?rent condil'r-s for NI-P
coatings are recommended and meihodz of mactining heat treated Ni-P cohtings.
Ye. T_
[Abstraoter's notei Complete -,ranslatl3nl
Card I/i

23477
1'0 ~ol I Li !~4 S/1?3/61/000/'OOq/b14/b27
IS I D A004/A104
AUTHOR; Vishenkov,.S.A.
TIM: Increasing the resistance to wear of parts from ferrous and non-fer-
rous metals by chemical nickel-plating
PERIODICAL; Referativnyy zhurnal, Mashinostroyeniye, no. 9, 1961, 92,a bstract
9B683 (V sb. "Povysheniye iznosostoykosti I sroka sluzbby mashin, V.
2", Kiyev, AN ukrssR, ig6o, 220 - 228)
TEM The author comments on various investigation works of Soviet authors
studying the mechanism of processes taking place during chemical niGkel plating,
effect-of additives, concentration and interrelation of constituents and tempera-
ture on the.plating rate of the nickel coat in acid and alkali baths. The author
presents the results of investigations carried out with the aim to establish the
optimum solution composition and correction methods for acid and alkali baths of
hard nickel plating. The tests in acid baths were carried out with 30XrCA (3OKh
GSA). and grade St.3 steel specimens at 90 - 930C ensuring the maximum plating rate.
The obtalned results are listed in tables and graphs. It Is shown that changes of
the nickel deposition rate are taking place most smoothly in baths in which the
Card 1/ 3

23477
Increasing the resistance ...
3/12-3, WW/009/014/10L-7
AD YA'10
molecular ;Uckel-to-hypophosphite ratio amounts to 0.4, and it is in these baths
that a maximum thickness of the nickel plating is obtained. The optimum conditions
for the correction of acid baths are produced if the nickel plating process in car-
ried out In two operationsi preliminary plating of the part with a 5 , 61Acoat
In one bath and final building up of the coat up to the required thicknes6 in the
second. Alkali baths were investigated with the aid of specimens from the AK-6
aluminum alloy. The analysis showed that the best electrolyte for the nickel-plat-
Ing of aluminum alloys-is a solution of the following composition (gram/liter):
nickel chloride - 21, sodium hypophosphite - 24; sodium c1trate - 45; ammonium
chloratG - 30; 135 milliliter/gram ammonia and 0.32 gram/liter aluminum sulfate.
The surface has to be prepared in the following way: pickling in a 2-3~ solution
of hot (6o - 700C) alkali, saturated with sodium chloride for 25 - 30seoonds, wash-
ing in hot (65 - 7000 and cold running water, clarification in a 50% nitric acid
solution at ro,:)m temperature, washing In cold water and contact galvanizing in a
silution of 500 gram/liter caustic soda and 100 gram/liter zinc oxide at 20 - 250C
for 25 - 30 seconds. The chemical nickel plating of aluminum alloys Is of special
interest. The author recommends a process in which at the beginning a 7 - 81k_ coat
of alkali solution Is applied with subsequent plating with a second layer up to the
necessary thickness In an electrolyte of the following composition (gram/liter)i
Card 2/_3

23477
S/123AII~~P14/Jb27
Increasing the resistance ... A004ZA10
nickel sulfate - 301 sodium hypophosphate - 10; sodium acetate - 10, at a pH-
value of 5.3 - 5.5 and a nickel deposition rate of 35 - 40,X/hour and more. The
author presents graphs of the change in the microhardness of nickel platings de-
pending on the heat-treatment temperature. The physical-chemical properties of
the obtained nickel platings are analyzsd.
N. Savina
[Abstra;~ter's notet Complete translation]
Card

VISHENNOV, S.A., Kand. teklin. nauk
Deposition of nickel and other metals with the aid of
chmical redilction. Zhur. VKHO 8 no.5:547-554 063.
(MIRA 17:1)

11YABUINKOV, Aleksoy Vasillyevich), UMUTSINA, Valorlya Ivanrivna;
VISHFNKOV, S.A.p kand. tekhn.nauk, retsenzent
[-Hardenintand protection of parts against corrosion by
the chemical nickel coating method] Uprochnenie i zaahchita
ot korrozil deta-lei matodom khimichaskogo nikelirovaniia.
Moskva, Mashinostroenie, 1965. 127 p. (MIRA 18-.12)

v~sHENKov,_", kand. tekhn. nauk; KASPAH)VA,, YQ-V., lnzh.; Prinima-
ii uchastiye: RYABCFMKOV, A.V., doktor khim. nauk, Prof.;
VELEMITSINA, V.I., inzh.; ZUSMANOVILCH, G.G.j, kand. takhn.
nauk; TUTOV, LYS., kand. tekhn. naukv retsenzent; KUBAREVp
V.I., inzh., red.; TAIROVA, A.L., red. izd-va; MAKAROVA, L.A.9
tekhn. red.; MELIBICHENKO, F.P., tekhn. red.,
(Increasing the reliability and durabilii;of machine parts by
chemically nickel coating) Povyshenie nadezhnosti i dolgovech-
nosti detalel mashin khimicheskim nikelirovaniem. Moskva,
Mashgiz, 1963. 205 p. (MIRA 16;6)
(Protective coatings) (Nickel)

M.11ENKO112 5.k.
Increasing the Wear Resistance of Ferrous and Nonferrous Metal Parts by Chemical
Nickel Plating.
Povysheniye iznosostoykosti i sroka sluzhby mashin. t. 2 (Increasing the Wear Resistance
and Extending the Service Life of Machines. v. 2) Kiyev, Izd-vo AN UkrSISR, 1960. 290 p.
3,000 copies printed. (Series: Its: Trudy, t. 2)
Sponsoring Agency: Vsesoyuznoye nauchno-tekhnicheskoye obahchestvo mashinostroitellnoy
promyshlermosti. Tsentrallnoye i Kiyevskoye oblastnoye pravleniya. Distitut mekhaniki
AN UkrSSR.
Editorial Board: Resp. Ed.: B. D. Grozin; Deputy Resp. Ed.: D.A. Draygor; M. P. Braun,
I. D. Faynerman, I. V. Kragellskiy; Scientific Secretary: M. L. Barabash; Ed. of v. 2:
Ya. A. Samokhvalov; Tech. Ed.: N. P. Rakhlina.
COVERAGE: The collection contains papers presented at the Third Scientific Technical
Conference held in Kiyev in September 1957 on problems of increasingthe wear resistance
and extending the service life of machihes. The conference was sponsored by the Institut
stroitellnoy mekhaniki AN UkrSSR (Institute of Structural Mechanics of the Academy of
Sciences Ukrainian SSR), and by the Kiyevskaya oblastnaya organizatsiya nauchno-tekhniches-
kogo obshchestva mashinostroitellnoy promyshlennosti (Kiyev Regional Organization of the
Scientific Technical Society of the Machine-Building Industry),