SCIENTIFIC ABSTRACT TSARENKO, V. - TSARENKOV, B.V.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001756920003-8
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 14, 2001
• Sequence Number: 3
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

j rat'. ;I I

TS~~~ ~zh ~
Follow the example of outstanding engineers. HTO 5 no.2:8 F 163
(MIRA 16~ 1
,6,
le Chlen nauchno-takhidcheakogo obahch6atva Gomellskogo zavoda
sellskokhozyaystvenno, o mashinostroyeniya.
IEl~lpeere)

tJS311 / Ft;-i:) Animalo. Honey Bee Q-7
Abs jour: Ref Zhur-Biol., No 3, 1958, 12203
Author Toarenko V. P.
Inst
Title The Technique Used by I. S. Filatov and the E.-fpcdi--
ency of Strengthening Bee Families (0 metode raboty
1. S. Filatova i tselesoobrazno3ti podsilivaniya
pchelinykh semey)
OriG Pub: Pchelovodstvo, 1957, No 5, 21-23
Abstract: The author argues that the strengthening of weak
families is expedient not only for the salce of aui~-
menting the number of bees but also for introduc-
ing, into a poor family, the bees distinguished by
their energy and efficiency which characterize Strong
families. However, If the weak family does no'~~ iffi-
prove, it should be culled.
Card 1/1

L.,15'~9 06
ACC NRt A.P6018552
satisfy exactly the zero boundary conditions on the two ohmic contacts. The threshol&
field and the frequency of these oscillations turn out to be gorverned by the same for-1
mulas as obtained in the earlier pappr for an Infinitely long sample. The threshold
fields for the almost-natural oscillations is smaller than the threshold field for the
true natural oscillations. If the field is smaller than critical, damped oscillations
can be excited by applying to the sample an alternating field. These arise when the
ohmic contacts are weakly injecting. The impedance of the sample in the latter case
is investigated and it is found that it exhibits resonant properties near the frequen-
cy of the natural oscillaiions in the case of a short sample or near the frequency of
almost-natural oselUations for the long sample. For the short sample the resonance
is manifest lay a single dip, whereas for a long sample it is manifest by a packet of
waves, The authors thank L. E. Gurevich and V. 1. Perell for useful discussions.
Orig. art. has: 3 figures and 45 Fo_rmulas.
M CCDE: 2p/ sm DATE: 22Nov65/ oRiG REF: oo2/ ozi REF: ool

T 47
ACC HR: A
P601072 SOURCL CODE: UR/0142/66/009/001/0063/0070
AUTHOR: -Toarenko, _V. ~~rpv,, G. V.; Borzenko, V. V.
ORG: none
TITLE$ Semiconductor waveguide attenuator.with combinational electric
control for shf power atabiliza Cion
SOURCE: IVUZ. Radiotekhnika, v. 9, no. 1, 1966, 63-70
TOPIC TAGS: microwave attenuator, microwave power stabilization, pn
junction
ABSTRACT: A description is given of a wide-band voltage-controlled
semiconductor attenuator for regulation of the shf output power level
of waveguides operatingon the 3-cm wavelength. The semiconductor atten-
uator in shown in the figure. The Ge wafer with ohmic contacts 1, 21
3, and rectifying contact 4 form a distributed p-n junction. To red Ucei
the ripple of the attenuation-frequency characteristic and the initial
losses, the wafer thickness in J.ess than the skin depth of the ulif
field in the semiconductor (i.e., 0.6 mm). The wafer may be mounted
cither porpendicular to or parn1lel to the longitudinal axis of the
waveguide (nee Fig. 1). Voltage potential ET is applied between con-
tacts 1 and 2, and a field is created, causing the flow of current If
-UDC*. -6,2 1 . 3.71.2 . 8 5- .-3-9

L 2Mi 5--156
ACC NR: AP6010724
4
To
a
L
20
narrowed
Waveg 11~~afer
6
b normal sections of
waveguide junctions
Fig. 1. Attenuator construction (a) and mounting in waveguide (b)
in the forward direction between contacts 3 and 4. Passage of current
If through the p-n junction causes the holes to be injected into the
sample. As a result, excess carrier concentration arises in the p-n
junction. Due to the gradient of carrier concentration along the
length of sample, the holes partially diffuse into the region inside
the waveguide. Voltage ET accelerates the motion of the holes and
increases their diffusion length. The lifetime of the holes becomes
sufficiently long for them to reach point x - a (Fig. la). This causes
a substantial increase of sample conductivity and, indirectly, the
attenuation of the electromagnetic wave as it passes through the semi-
Card 2 3
MrP
3
LIE % 0 ME

L 2277-'1-66
A1160107 2 4
ACC NP:
conductor sample. Test reaulta :~n,lfcati! that the tranamli;filon factor
does not vary by more than 3 db I.n a 20% f requcncy band. The speed
i of responne of the device operating in the pulsed mode was 200-220 iisec
for ET - 0 and 20-30 usec for Ej, - 2v/cm. The attenuation charac-
teriatic Sv w da/dIf (a. attenuation) was 300-600 per amp for optimum
E-e. The maximum dynamic range of the attenuator was 20 db. The
attenuator may be effectively used in automatic systems requiring high-'
speed slif power level regulation, alif detectors, and directional
couplers. The two control signala are the error signal and its
differential. Orig. art. hast 4 figures and 2 formulas. JBDJI
,SUB CODEs 09/ SUBM DATEs 04Feb65/ ORIG REN 005/ OTH REPt 006
ATD PRESS:q'2-zq
Card 33

T=RM-AP60035 SOtJRCE GODE: UR/O log /66/011/001/0158/0161
AUTHOR: Tsarenko, V. T.; Valitov, R. A.
ORG: none
TITLE: Calculation of �HF-pR~yer stabL1izers_,,,!/,
SOURCE: Radiotekhnika i elektronika, v. 11, no. 1, 1966, 158-161
TOPIC TAGS: SHE attenuator, SHE power stabilizer
ABSTRACT: A method of calculation iE. suggested for a broadband SHE-power
stabilizer based on an electrically-cont rolled semiconductor attenuator. The SHE-
generator -stabilizer -load system is treated as an automatic controller and a plant,
Plant and the equations descr.ibing both are set up.
r-13j-eim Essentially, the system (see figure) comprises the
P, S P, - ;r following parts: I - SHE oscillator; 2 - controllable
-r~~ ~- - attenuator; 3 - directional coupler and crystal
I so 8 detector; 4 -.first amplifier; 5 - comparison circuit;
1 6 - second amplifier; 7 - pulse detector; 8 - single-
1
I 1(n 7 6 stage d-c amplifier; 9 - load. A graphoanalytical
I on ro or
L ----------- --- I
Card I
UDC: 6zl-.3i6.72

ACC NRt AP6003566
0
1 procedure for calculating the stabilizer parameters Is given. An experimental
verification of the procedure showed a difference between the theoretical and experi-
mental stabilization characteristics of C'. 06 db. Orig. art. has: Z figures,
14 formulae, and I table.
SUB CODE: 09 / SUBM DATE: Z5Jan65 / ORIG REF: 003
Card

VALITOV, R.A.; DOMANOVA, Ye.A.; TSARFNKO, V.T.
Device for stabilizing the power of microwave oscillations in a
wide frequency range. Radiotakh. i elektron. 8 no.10:1793-1795
0 163. (MIRA 161l0)

d L

ACCESSION-NR: AP4040755 6/0142/64/007/002/0253/0256
AUTHOR: Valitov, R. A.; Domanorap Ye. A.; Tearenko, V. T.
TITLE: Waveguide broadband power stabilizer
SOURCE: IVUZ. Radiotekhnika, v. 7, no. 2. 1964# 253-256
TOPIC TAGS: waveguide element, standing wave ratio, microwave equip-
ment, power stabilizer
ABSTRACT: A stabilizer is describeds capable of maintaining the
load power constant within several per cent in a frequency range of
20%. The stabilizer is made broad-band by using an electrically con-
trolled germanium-slab attenuator with a rectifying p-n junction.
The input measuring element is a gas-discharge junction. Whenever
the waveguide power deviates from the minimum level, an error signal,
modifies the admittance of the germanium slab and restores the power
level. The accuracy of the apparatus is estimated at 3.5% when the
Card

ACCESSION NR: AP4040755
input power drops by 10 dB from not less than 2 mW initial level.
The stabilizer can be used as an attachment to a sweep generator of
the klystron type with mechanical, automatic tuning provided the fm
signal is additionally modulated in amplitude at approximately I kcs
frequency. Orig. art. has: 4 figures and 5 formulas.
ASSOCIATION: None
SUDMITTED: 13Aug63 ENCL! 03
SUB CODE: EC NR REF SOVi 004 OTHER: 000
2/

VALITOV9 Rafkat Amirkhanovichg prof.; TARASOVI Vladiolav Lukichl SHISHKINv
Leonid Adrianovich; TSARZ,-NXO,_Yiktor Timpfoyevichj FIIA)NENXO, ,
Sergey Nikonovicbj BARMOV, Viko2ay
Arsentlyevich; SYTYYj Gezwadiy Fedorovichf hURILOVA, T.Mol red,j
TROPMENKOp A.S., tekhn. red.
[Measurement of transistor parameters] Izmereniia parametrov po,--
3.uprovodnikovykh triodov. Kharlkov, lzd-vo Khartkovskogo Goe.
univ. im. A.M.Gorlkogo 1960. 193 P. (M3RA l4s8)
ITransistors)

POLUUAKII, Konstantin Stemmovich: A.Ya., retsenzorit; SKOIUK,
Ye.T., retsenzent., ., 'AY, rotoenzent; TSA:OiKO, V.T.,
otv. red.; TRETIYArUVA. A.Ili., red.; ALEKSV!D,-,l'OV!-G-.F., toklm.
red.
fElectronic rosont-me ricamiring devicosl Eloktronnyo rozonansnyo
izmeritollyWo pilbory. K~arlkov, Izd-vo KharIkovckogo [,'ov. univ.
im.A.E.Gorikogo, 1961. 138 p. (MIRA 34: 12)
(Eloctronic measurements) Otadio meauurements)

vil I'l
frequency gas-discharg,~~
7 110-5:995-998 '(;4.
1. laiarlkovskiy

DOROKHOV, Alok:;undr Petrovich; M213KIIIA, Galina Stepanovna;
bTARODUBTSEV, Viktor Aleksandrovich; T.SAIU-24KO, Vladimir
Ti:mofeyevich; VCLIKO'.', A.A., retsenz76tit';' =RODN-rYCjMT,,
I.F., retsenzent; RUDDIKU, V.S., retsenzent; TETELIBAUM,
Ya.I., retsenzent; FILOT111171:0, S.N., dots., otv. red.;
NE-STEI(ENKO, A.S., red.
[Principles of industrial electronics] Osnovy promyshlennoi
olcRtroniki. [Byl A.F.Dorokhov i dr. KIwrIkov, Izd-vo
KharIkovskogo univ.) 1961t, 214 1), (MIRA 17;8)

015151' SOURCE CODE: UR/0142/66/009/002/0241/0243
AU11iOR:. Ts aren~,o_Y;J.; Malyshenko, L. Ye.
ORG: nnne
TITLE: The use of semiconductor diodes in uhf energy modulation in the 10-cm range
SOURCE! IVUZ. Radiotekhnika, v. 9, no. 2, 1966, 241-243
TOPIC TAGS: uhf, waveguide element, semiconductor diode
ABSTRACT: The results obtained with commercial-type D403 semiconductor diodes in
modulating uht energy in the 10-cm range are discussed. In the case of modulation
with direct diode switching during the transmission period, negative characteristics
are observed, i.e., low controlled attenuation (not exceeding 7 db per diode) with
considerable losses (2-3 db) and a voltage standing wave ratio reaching 2. A
modulator based on a twin T-Junction waveguide, in which no resonant state of diodes
is required, is also investigated. It was found that the modulation of the uhf
energy is associated not *ith the reflection of energy but with its absorption. The
wodulator *systems considered can be used as smooth electrically controlled atenuators
in automatic control systems. Or1g. art. has: 3 figuree. [3R]
SUB CODE: 09/ SUBM DATE: 23Jan65/ ORIG REF: 004/ OTH REF: 002/

TSARENKO, Ya.A.
Labor on guard for peace. 14ekh.sill.boap. 10 no-12:3-4
D 159. (MIRA 1323)
1. Prodeadatell kalkhosa "Pershe travnya." PopilyWanskogo
rayon&, Zhitomirskoy oblaoti.
(Popellnya.~District--Collective farms)

TSARENKO, Cand. Agri. Sci. (diss) "Local Variety of Win-
ter Wheat of Western Oblasts of Ukraine as Initial Selection Ma-
terial," Leningrad, 1961, 25 pp. (All-Union Acad. Agri. Sci. All-
Un. Inst. Plant Raising) 150 copies (KL Supp 12-61, 280).

SHAVIDVSKIY, G.M.; TSARENKO, Ye.M.; FIKTASH9 I.S.
Characteristics of flavine synthesis by the yeast Candtda
tropicalis var. rhagii, Dokl. AN SSSR 142 no.4:91+0-943
F 162. (h."A 15s2)
1. Llvovskiy gosudarstvennyy universitet im* 1. Franko.
Predstavleno &kademikom V *N0Sha shnikovym.
(R3BOFIAVINET
(CANDIDA TROPICALIS)
77, ---- --

t
AUTHORS: Lantratov, V.
TITLE: TnvestigiAtion
Solutions. The
PERIODICAL: Zhu,. na I f izic
( U!;:; it )
S C) V/ -5 2
F. , Taarenko, Ye, 7,
of the Thurmodyn7imic kropertios of Liquid !'utallio
S.-latem Potassium-Thallium
ivukov khiiaii, IY)'), Vo I I -T r `I, pp V,/ Q7
ABSTRACT: The electromotive force (UP) of the conceritratior.
X I glaao I K -TI for colu tionB with 1 2,6? to )5 a tov.-," "'I wa,4
.0
measured in the tea;poraturv range of' 171'.)--~,2'1 C~ The dtvii~-.ji
of the measuring coll was the one doscribed in
1 1he electrolyte was rlass 75-5K
references 2
(68-' Sio '291,~,' B 03; 31-~ k1 0, :I-a,,O uni K_O~
2 2 2
perature was ineu5ured iith a c fir ome lzallui-.ii num
via a potentiameter PP while .110 (VIP) was duterr,.-n,!d by mean3
of a 1-otEntiomete--- PPTV.!~ Th~- 'herviodynamic 1.roi:erties cf
thl! liquid 7 `21 aclutiona were calcul~tte~ from the -Values
obtain,.-I 'or the -.oncertration ve.11.9
with K'-ion:3 poiassi--an thall.-um (if
K TI
C-rd 1/3 (IrKand 11 T! atomic fraction of compoilunte.) -

SCV/7' - -
20
Investigation of the Thermclynanic Yro~ert -J',r- s of' Li qu 1 11 1 -Ir S~- t 4 on
The SYstem Pot aso lAuri-I
pr oper t io a cit I cu la tu ~A -wa r,3 a c t iv x t y , a r. t i v i t y o,, f f i %-n~
partial molar,fEee unorgiu3 lin) 03'CV!)-21V0 fr(M) fcr
K an,1 TI at 525 C; aa well au th~.! integral v;tiu(~o ,-t' t h c-
molar free tanerigies 6 F of the excougive f ree r,,,- cs
of the rnixt%ire entropy 6 3 off tiic (-xcessivc :,.i-xt,4re ~2! trrpy L,3'0,
-1 i.; ', x' , i i bt s
and the auxture heat A 11 ( ble 2), '-'he activ'ty :,.f K ~, .
t, complt~x dep3ndence on tho coml,,osition. 11'!Uys W-,.th 0 2'r,
uhow a pos-itive deviat-l~n from Iniv t.~ c n 5
,%ith less than 25 Atl/o T1 dFiviato in the neC3',iv,~
These dpviations are increa3e-] by lr)wer
ly complisated inatter are Uie isovierms --f I..e
eff-cien-. of F. TbjL2 behuvicr of K T! ?~cn
siderad to be d-.)(, to a ctrong rew-,ticin takinir p1o ~e 1j,?tweer,
K and T! iiherebj structural of' motalltc fcxm
in the aoluti-)n. 1111h(; Jnfe,grul c.irvc.-i cf A i.,, A F F
exhibit extreraes at N 0,4 All - 5',60 AF 26,130 -,,11
bF* = 11)10 ca*l and S 2.~!,', ca] /de&rcu~ Sine,-, the Values
t i
All bre for all cow-positicna ~,reuter tnan tht, icz~pc:t:.Va,
Card 2/3 values for L r,*; ],,..TI SOIUtiO."1.3 11--it lie aa " e~:ular"

30V/76 -37J,F,' ~0/39
Investigation of the Thermodyna;:iic Pruport ion of Liquid I ic Soluticnj~
The System Potassium.-Thallium
ones (Ref 13). The shift of the extreme value away from the
one which would correspond to the most stable K-T1 Compound
is explained by the fact that there are in the liquid alloys
compounds richer in TI side by side with the K-TI compound,
There are 4 figures, 2 table3; and 13 referencec, 1, of rhich
are Soviet.
ASSOCIATION: Loningradskiy elektrCtekhnicheskiy institut in. V I Ullyanova
Lenina)
Leningrad EinctrotGchnical Institute imeni V I Ul*yanov
Lenin))
~
SUBMITTED: January 51, 1958
Card 3/3

6/080/60/033/U0'(/00_(/02G
200 A003/A001
AUTHORS: Lantratov, M. F., Tsarenkg, Ye, V.
TITLE: An Investigation of Thermodynamic Properties of Liquid Metal
Solutions in the Potassium-Mercury System
PERIODICAL: Zhurnal prikladnoy khimii, 1960, Vol. 33, No. 7, pp. 1539-1546
TEXT: The thermodynamic properties of liquid alloys of potassium with
mercury were investigated within the temperature range of 250-3500C and within
the concentrations NK = 0.04992 - 0.898 by the emf method. The thermodynamic
properties were calcucl&ted from the emf values (E) and the temperature
coefficients of emf(( of the concentration circuits: K I solid electrolyte
containing K + I K (N7, Hg (N ), where NK and NHg are the atomic percentage
K go.
of potassium and mercury, respeAively. Equations were presented for the
calculation of the partial values of the isobaric-isothermal potential and the
excess potential of potassium, for the partial molar entropy of mixing and the 'A
excess entropy of the mixture, for the partial molar heat of the mixture, etc.
The emf was measured by a HTS-1 (PPTV-1) potentiometer. It was shown that
the activity of potassium depends on the composition of the alloy. In solutions
Card 112

3/080/60/03-3/00VU07/02-0
A003/AOOI
An Investigation of Thermodynamic Properties of Liquid Metal Solutions in the
Potassium-Mercury System
containing from 0 to 35.5 atomic % mercury positive deviations from Raoult's
law and in solutions containing more than 35,5 atomic % large negative
deviations are observed. The most stable oompound in the K-Bg system is KHg 2'
The curve of the integral heat of mixing has a clear extremum at N K - 0'36'
i. e., in the region of the composition KHg 2' The maximum molar heat iz; -4.3
kcal/g-atom. There are 5 graphs, 2 tables and 20 references: 8 Soviet,
8 German, 3 English and 1 American.
SUMMED: January 28, 1960
Card 2/2

IANTRATOV, M.F.; TSARENKO, Ye.v.
I
Thermodynamic properties lof liquid metallic solutions Of ther systems
Na -0a and K - Ga. Zhur.prikl.khim. 34 no.11:2435~-2441 r, ' t,
MRA 15:1)
1. Leningradskiy elektroteklmicheskily institut imeni, V.I.Ullyanava
(Lenina). (Gallium alloys)

LANTRAT"OV, M.Y.. TSARMO. Te.V-
Thermodynamic properties of the liquid metallic solutions of
Zn - Di and I - Cd systems. Zhur-prikl.lchim. 33 no.5:1116-1128
my 16o. (MlR1 13:7)
1e Leningradekty elektroteMmicheekly institut im. V.1. Ullya-
nova (Lenina).
(Zinc) (Bismuth) (Potassium) (Cadmium)

LILNTRATOV, M.F.; TSIARZ 0,
Thermodynamic properties of liquid metallic solutions in the
system potassium - mercury. Zhur.prikl.khim- 33 no-7t
1539-1546 J1 16o. (MIU 1,137)
(Potassium-wercury alloys)

7- !~: _ ,i, I- inekrino -into -s vnAirotron
A r e q e ff- n

S/.12o/62/000/005/002/036
E032/E314
AUTHORS: Kazanskiy, G.S., Mikhaylov, A.I., Myznikov, K.P.
and Tsarenkov, A.P.-
-----------
TITLE: Methods of varying the time of interaction of the
beam with the target in the lO.GeV proton synchrotron
PERIODICAL: Pribory i,tekhni.ka eksperimenta, no- 5, 1962,
19 - 24
TEXT: Experiments designed for th~e proton synchrotron at
the Joint Institute for Nuclear Studies require the availability
of secondary-particle pulses of different lengths. Secondary
particles are produced by bombarding an interna '1 target ana the
time of interaction of the beam with the-target determines the
length of the secondary-particle puls*e. The authors give in.
this paper a brief summary of the various methods used to alter
the beam-target time of interaction. The methods for increasing
the time of interaction are as follows: 1) resonance build-up
of oscillations in which the resonance is excited artificially
by modulating the accelerating voltage in such a way that the
particles leave the phase-stability region. Particles leaving
tard 1/3

s/120/62/000/005/002/036
Methods of varying .... E032/E314
the acceleration process are deflected by the variable magnetic
field onto the target and the time of interaction with the target
is adjusted by adjusting the modulation amplitude. In this way,
the length of the secondary-particle pulses can be increased to
250 ms. 2) Slow reduction in the amplitude of the accelerating
voltage. This method is also based on the removal of the
accelerated particles from synchronism by reducing the region of
phase stability. The method has been discussed theoretically
by V.I. Kotov and L.L. Sabsovich (PTE, 1957, no. 6, 19). However,
an empirical approach was found to be more suitable.
3) Slow variation in the frequency of the accelerating voltage.
A change in this frequency produces a change in the radius of the
equilibrium orbit. This effect has been considered theoretically
by M.S. Rabinovich (Tr. FIAN SSSR, 1958, 10, 23). The rate at
which the beam is displaced onto the target is proportional to
the rate of change in the frequency. Linear variation in the
frequency was found to be inadequate and a special feedback
system which controls . the relation between the frequency and
the magnetic field was developed, using the radial beam-
position indicator reported by F.A. Vodoplyanov et al
Card 2/3

S/120/62/000/005/002/036
Methods of varying E032/E314
(Proceedings of the International Conference on High Energy
Accelerators and Instrumentation, CERN, Geneva, 1959).
The methods used to reduce the beam-target interaction time were
as follows: a) reduction in the radial dimensions of the beam
during the acceleration process. In this method the width of the
beam was it-educed by slowly varying the frequency of the accelera-
ting voltage; b) instantaneous change in the phase of'the
accelerating voltage. Hero, the time'of interaction was reduced
by increasing the rate of displacement of instantaneous
equilibrium orbits; c) rapid variation in the frequency of
the accelerating voltage. This method has the considerable
advantage that it gives rise to very lit'tle chdnge in the output
intensity (low particle losses). With a frequency variation
of 1.8 Mc/s/s, the time of interaction can be reduced to 2 -As.
This corresponds to the interception of 70% of the original beam
by the target. There are 8 figures.
ASSOCIATION: ObOyedinennyy institut yadernykh issledovaniy
SUBMITTED:
Card 3/3
(Joint Institute for Nuclear Studies)
December 9, 1961

KAZAIISKIY, G.S.; I,IIYJAYLOV, A.I.; MYZNIKOV, K.P.;-TSARMOV, A.P.
[Methods for changine the duration of the iirteraction between
the beam and the target In a sjnchrophasotron at 10 Bev] Fetoer/
izmeneniia dlitellnosti, v,,,,aimodeistviia puchka a miohenliu v
sinkhrofazotrone na 10 Beir. Dubnap Ob"edinennyi in-t iadernykh
issl.l 1961. 17 p. (MIRA 15:1)
(Synchrotron) (Protons)

45137
S10891631014100210031019
B102/8186
6 73 0
AUTHORSj Kazanskiy, G. S., Kuznetsov, A. B.j Mikhaylov, A. I.,
Rubin, N. B., T!_"r jLkqy"~_X,
TITLE: Investigation of the beam formation of accelerated particles
in the proton-synchrotron by means.of induction electrodes
PERIODIdAL: Atomnaya energiya, v. 14, no. 2, 1963, 153 - 158
TEXT: The beam formation process in the first stage of acceleration at the
proton-synchrotron of the Ob"yedinennyy institut yadernykh iBeledovaniy
(Joint Institute of Nuclear Research) in Du~pa was studied wit 'h the help-
of electrostatic signal electrodes (Vodoplyanov, Kuzmin, at aL, Proc.
Intern. Conf. High-Energy Accelerators and instrumentation, CERN,.Geneva,
1959, P. 470, 4771 Kazanskiy et al., Preprint OIYaI, B-50-819, Dubna, 1961). Vr
These electrodes are broad copper plates arranged tQ form two systems on
either side of the beam. The platei; of one system are arranged symmetri-
cally to the mid-plane of the ma net (vertical electrodes), and those of
the other perpendicular thereto ~radial electrodes). The signal Y(T) in-
duoed in the vertical electrodes is proportional..to the change in the
Card 1/4

S/089/63/014/002/003/019
Investigation of the beam... B102/Ble6
azimuthal charge density in the flying bunchs V(9)c-a~d -1 2n, where 1 is
C 7E
the electric length of the electrodes, C the capacitance of the plates
relative to the earth, and R the perimeter of the equilibrium orbit. V(j)
is led to an integrator which yields V mean ' N/nC, Q being the charge pf
the accelerated bunch. For the proton-synchrotron of the OIYaI the sensi-
tivity of the vertical electrodes, a - C/el, was 1.10 12 protons/v;
R - 208 m, I - 0.5 m, C - 400,~x~,,f- If the output volt9ge Vout (cf. Fig. 1)
is measured and the amplification factor K is known, the number of protons
in the bunoh, N - V out alK, is determined. -The signal U(j) of the radial
electrodes records the horizontal deviation of the beam from the equi-
librium radius; the radial sensitivity is 2,~/cm. The electrode installa-
tion has a pass band of 0.1 - 3 Mc which allows a distortion-free recording
of V(p) and U(y) and their amplitude modulation. A consideration of the
motion of the p3rticles along the phase trajeatories taking account of the
free oscillations shows that the amplitude structure of the bean, must be ob-
served during 1C0 - 150 pseo after the switching-Aon of the accelerating
voltage; the beam formation takes place during the first 1 - 1.5 mseo. The
Card 2/4

S/089/63/014/002/003/019
Investigation of the beam ... B102/Ble6
radial phase oscillations of the beam are accompanied by the oscillations
of the azimuthal density with the frequencies S1 and 2R, where 11 is the
angular frequency of the phase oscillations. The amplitudes of these
oscillations depend on AM/b, 6M biting the initial energy spread and b the
radial eeparatrix half-dimension. If AM/b 6 1,'the oscillation with the
frequency 211 vanishes;-if AM/b,/, I I., and increase with temperature (I
dir dir 01 o2' 01>P2' 1o2 o2
faster than 1 01 ); at 200-3000C, Iolc~~IW Pl- 02 - The occurrence of two
Card 2/6

20 8 0 2
Alloyed GaAs ...
S/181/61/003/003/029/0310
B102/B205
exponential sections of the direct branch is related to the surface proper-
ties of the diode. By a change of the composition of the etching agen-, one
of them disappears, and in formula (1) 1 OW Io2 and 0-42. The existence of
two sections and the disappearance of one section by surface treatment is
ascribed to the fact that the surface of gallium arsenide has an inverse
layer. The cutoff voltage of the direct branch is lower than the contact
voltage calculated according to Shockley's junction theory, and drOC3 with
increasing temperature. The temperature coefficients of the two voltages are
almost equal. The curvature G. of the linear section of the direct branch
calc-alated from the data of the diode with a base 0-5 Mm thick amounted to
-103 a/v-cm 2. The differential resistance at zero voltage can be exactly
calculated from the formula Ro 0 PkT/qIo. R0 (T) is nearly inverse to Io(T).
Ro of diodes with two exponmtial sections of the direct branch is m)ich Omal ler
than Ro of diodes with only one section. The reverse branch of the
characteristics at voltages lower than the breakdown voltage can be descrilhed
by the empirical formula I - AUn where n 5;1; 1 increases with
rev rev' rev
temperature. The breakdown voltage also increases with temperature, whir~h is
Card 3/6

20802
S118116110031003102~1030
Alloyed GaAs ... B102/B205
taken as an indication of the electric character of breakdown in low-voltage
GaAs diodes. There are 1 figure and 11 references: 9 Soviet-bloc and
2 non-Soviet-bloc.
ASSOCIATION: Fiziko-tekhnicheskiy institut AN USSR Leningrad (Institute of
Physics and Technology, AS USSR, Leningrad)
SUBMITTED: September 23, 1960
Legend to Fig.: Ordinate unit 4 ma, abscissa unit 1 v (left-hand diagrams)
or 0.25 v (right-hand diagrams).
Card 4/6

Alloyed -GaAs ...
~2j
P.

WC 1.3i1

20802
S/18 61/003/003/029/030
B1 02YB205

Card.5/6

Alloyed GaAsaas
card 6/6
20802
o
W'/181/61/003/003/029/030
B102/B205
I '.,~ ~ 7~1:, 1. 4 -~ "---,~ -

S/181/62/004/004/038/042
B102/BIO4
AUT11011")* Naoledov, D. N.9 Rogachevq A. A., 11yvkinj S. M., and
Tourenkov, B. V.
TITLE: Recombinution radiation of gallium arsenide
Fizika tverdogo tela, v- 40 no- 49 1962, io62-W65
TFXT , i.fonocryutalllno n-typo InAn platen with an olootron ronvontVILIA(ift
of 41017CM-3 were used to study the intrinsic recombination radiation.
A p-n junction of '-0.1 cm2 was produced by diffusion of Zn or Cd into the
InAo plate. The nonequilibrium carrierc were excited by pulsed
injection through the junction. The radiation was observed in parallel
t.o the p-n junction plane. At 770y, the emission spectrum has a narrow
peak at 1.47 ev (optical self-absorption edge) and two maxima at lowor
energies which are in connection with recombination via impurity, levels.
One of these levels is 0.2 ev distant from the middle of the forbidden
b--nd, the other 0.25 ev from a band edge. The relative height of all
maxima depends on the current density through the-p-n junction. At less
Card 1/2

s/i81/62/004/004/03a/0,12
Recombination radiation of gallium B102/B104
tlx,u 1 a/cm2only iz,purity radiation is observed, then intrinsic radi-rition
arises and increases rapidly, anti between 10 and 100 a/cM 2 the relative
height of the maxima remains conl3tant. The results can be explainc,l by
assuming volume-charge rfcombination at weak currents and injection it
high currents. At above 10 a/cM 2 the emission intensity increasc,:;
linearly with the current density through the p-n junction anil
3 2. -],~I, ndent
only above ;-10 a/cm The forbidden band width is temperature c!.
according to the law (1-51-5.6-10-4 T) ev. The intrinsic ernisoion line
narrowing observed at high current densities can be explained by inver:~e
band filling (production of stlit-2s with "negative temperature") or by
assuming that the injected carriers cause degenerate fillinr of on', bf~nl
only. The latter possibility is more probable. There are 2 figur~22.
ASSOCI.ITION: Fiziko-tekhnicheskf4 institut im. A. F. Ioffe AN
Leningrad (Physicotechnical Institute imeni A. F. Ioffe
AS USSR, Leningrad)
SUBIMITTED: January 11, 1962
Card 212

GUTKIII,, A.tt.; N=EDOV, DAT.; S11"DOVp V.YO.; Ts".1u,"11KOV) D.V.
Photoelectric propertie:3 ()f GaAs r,-n junctions. Filz, tver. tola
4 no.9;2338-2348 S 162. (MIRA lrl:9)
1. Fiziko-tekhnlcheakiy Ins'Atut imeni A.F. Ioffe Arl
Leningrad.
(Junction trpnsistors) (Gallium tiruenide)
(Photoolactricity)

nASIZDOV, DJI.; ROGACIWV, A.A,I,RYVKI]4., S.M.; KHARTSIUN, V.Ye.;
.TSAaW;Nj-R.V.-
Structure of direct recombination spectra of gallium
arsenide. Fiz. tver. tela 4 no.11:3346-3348 N 162-
(MIRA 15:12)
1. Fiziko-tekhnicheskiy institut imeni A.F. Joffe AN SSSR,
Leningrad* (Gallium arsenide--Spectra)

GUTKIN, A.A.; NASLEDOV, D.N.; SWOV, V.Ye.; TSAREITIKOV, B.V.
Photoelectric solar energy converters using GaAs.
Radiotekh. i elektron. 7 no.12:2095-2096 D '62.
(MMA 15:11)
1. Fizik - hnicheskiy institut im. A.F. loffe AN SSSR.
(Photoelectric tells)
07 (Solar batteries)

L14978-63 EWA W VFX, (k)/F-"-rP (4'J/EWT(n,' /KC 1FFTC/A5D/-_3D--3/S_5D
i~_X_-_4_F1'_Z-4 AT/JD/WG 7 'F,
ACCESSION M: APYJ04gi6 S/0120/63/000/004/0187/0138
AWHOM GUtkin,_ A. A.; Rogachev, A, A.; Sedov, V. Ye.; Teareakov B. V4
'12MMIMP~r
1101. 1
Tr=: Low-inertia gallium arsenide l1gbt-generating diode
SOURCE: Pribory I tekhnlka eksperlenta, no. 4, 1963, 187-188
TOPIC TAGS: gallium arsenide light generator, light-generating diode, gallium
arsenide diode, carrier injectiorn liminescence, injection luminescence, gallium
arsenide laser, laser, carrier, luminescence, injection
C.~
ABSTRACT: A light-generatingtdiode made of single crystal a-type gallium arsenide
diffused with p-type zinc has been ~zonstructed and tested. Light emission was
produced at room tempereture by applying a pulsed current with pulse luration of
1-10 ~Lsec across the p-n junction. The obtained light spectnn, showed two Maxima
centered at 0.95 and 1.3 11. The time constant wai less than 5 x 10-0 sec. At a
maxim,m injection current of 20 amp the efficiency of the generator wass about
The authors hope to Increase tho photon flix several times by construc-
tional refinements and the use of higher quality material. The author acknowl-
edges that while the present article WaB being prepared for printing, the journal
Card 1/2

L 1497&63
AccEssion m: Anoo4%6
Electronica (iluly 1,062, 13, 7; 1962, 27, 24) disclooed the construction (in the '.'T
Ti. S.) of a galliwn arcen:tda light-ganerating diQde vith a power of 3 v operated I
at IiquId-njtrO._eq "7be authors thank D. N. Hasledov and S. M.
Z _4tomperatures.
Ry*vkin for theiilHlbterest in the vork." Orig. art. has- 4 figures.
X.1501,'TATIOTh FI,.1%o-teI,:hnIcheskIy inatitut All SSOR (Physicotechnical Institute,
AN 0.13311)
SUBIa=: 14.Sep62 DA7EACQ: 2OAu63 ENCL: 00
SUB CODE: M NO REP SOV.. 001 0111ER: 001 1!
Card 2/2

Tr5fi k EIV k0 V'~ t3' V.
AID Hr. 975-14 23 MAY
ELECTRICAL BREAKDOWN OF GaAs p-n JUNCTIONS (USSR)
Nasledov, D. N., and B. V. Tsarenkov. Fizika tverdogo tela, v. 5, no. 4,
Apr 1963, 1181:-1188. S/181/63/005/004/035/047
A stu6 ;)f electrical discharge in GaAs junction diodes has been made with
monocrystalline specimens of n-type gallium arsenide with 5.1016 to 1017 CM-)
ele ctron concentration and 3000 to 3500 cm 2/ v-sec electron mobility, T he
specimens were doped with Cd or Zn impurities. The thickness of t he -p-
layer was 10-20 11 after Cd diffusion and 20-100 4 after Zn diffusion. the
breakdown voltage was under 10 v at room temperature., Results show that
the breakdown voltage and the critical field increase almost linearly with
temperature in the range from 77 to 540*K. With constant temperature the
breakdown voltage increases with increasing critical width of the volume
charge layer during breakdown, while the critical field decreases. It 'is
shown that the breakdown mechanism is impact ionization. [BB)
Card 1/1

Acamiou NR: APW19837
S/03-81/64/006/003/0776/0779
AUTHORS: Ivanova., Ye. A.; Haslodov, D. N.; TgpLronkov, Be V.
TITLB2 Lifetime of current carriers in space charge layer of Gaks-p-n-transitions
SOURGEa Fizika tvardogo tela, v. 6, no. 3, 1964, 776-779
TOPIC TAGSi upaco clkirgo, p n transition, volt'ampero characteristic, vacuum
I
diode, current density
ABVIRACT: The lifetime of current carriers in a space charge Iayer of GaAs-p-n-
transition has boon determined from the straight portion of the statistical volt-
ampare characteristics, under conditions when the experimental volt-ampere
cluaractoristics of a diode could be compared quantitatively with theory, The Sah-I
Noyce-Shockley (Proc. IREI 45j 1228, 1957) equation for the volt-ampere character-.
istics is used to predict the lifetime TOP ligeop
7- kr i
We &F,
Card 1/2

ACCESSION NR: AP4olq837
and is eomoared to the data from two vacuum diodes (Nos. 58 and 64). The results
show-that' does not depend on the nonequilibrium carriers up to citrrent densitiai
Of 1 amp/c~2., nor on temperature in the interval 293 to 545X. Its value was
estIimated to lie between 10-9 and 10-6 sec. "The authors express their gratitude
to R. F. Kazarinov and V. I. Stafeyev for their help," Orige art* has: 4 formulas,
1 table., and 1 figure.
'ASSOCIATION: Fiziko-tekhnichoskiy institut im. A, F. Ioffe AN SSSR Leningrad
(Physical and Technical Institute AN SSSR)
SUBWITTEDs 0_53ep63 DATE ACQ: 3DIar64 ENGLs 00
SUB CODE: 'PH NO REF GOV: 003 OTHERs 004
Card 2/2

GUTKIN, A.A.; ROGACHEV, A.A.; SEDOV, V.Ye.; TSARENKOV, B.V.
Low-inertia light source from gallium arsenide. Prib. i tekh.
eksp. 8 no.4.-187-188 JI-Ag 163. (MIRA 16:12)
1. Fiziko-tekhnicheskiy Institut AN SSSR.

t iuri(-L i oris in cl"I I Lum
F I
c f Ei c; I I
Card
19

I~f. C - -, ;)N 'i !, - ~j, ~ -

ASSOCTATInN
S JR F
Card 3/3

310_82_65 ZjT(M)/9:,"P(t)/WP(b) 1,TP(c) JD-
.1ACCESSION NR: AP5006880 5/0181/65/007/003/0775/0780
Heskin.,
V. N.; Tsarenkov, D. V.
TITLE: ElectrolumInescence spectra of strongly degenerate gallium qrsenide
SOURCE: Fizika tverdogo tela, v. 7, no. 3, 1965, 775-780
TOPIC TAGS: gallium arsenide, semiconductor. electroluminescence, p n junction.
recombination radiation, radiative recombination
S
AUTMORt Imenkov, A. .; ~aLlovz H._M_.* S.; Nasledov, 0.
L
ABSTRACT: An investigation was made of the injection electroluminescence of GaAs
tunnel p-n junctions at temperatures of 77 and 293K. In preparing the diodes. zinc
was diffused into an n-type GaAs monocrystal up to hole concentrations of
165-1019 cm-3 in a 10-20 micron surface layer. The tunnel p-n junction was fabri-
~
cated by diffusing tin into the p-side of GaAs. The emission was found to vary
strongly with injection current. Recombination radiation spectra showed a peak
which with increasing current densities was shifted toward higher photon energies
(from 1.0 to 1.445 eir at 77K). Other maxima independent of the Injection current
were also present. A very distinct peak at 1.42 ev was observed at 77K. Analysis
I of the experimental data showed that at small Injection current densities (lead
Cord 1/2
%Vh

L 31082-65
~ACCESSION NR: AP5006880
ithan 1-2-104 amp/cm2 electrolumineacence depends on the properties of tunne( diodes
while at higher current densities it is determined by the properties of the p-region:
The current-independent peaks were attributed to tunneling of electrons into deep-
lying levels in the forbidden band and subsequent radiative recombinWon. Orig.
art. has: 6 figures. ICS)
ASSOCIATION: Fizik6-tekhnicheakiy inatitut im. A. F. loffe AN SSSR, Leningrad
(Physicotechnical Institute, AN SSSR)
SUBMITTED: 15Aug64 ENCL: 00 SUR CODEt SS, OP
NO REF SOV., 005 OTHERj 006 ATD PRESSj 3198
Cord

ACC&SSION NR: AP5007nrI2
Y M. ',I,-
SOURCE: Radiotekhnika i elektrotilka, v
!Q41r
ABSTRACT: Alloy ar-d -d-W&Usion Mricticini; anei

ACCESSION Mi. AP~ijtj-, :4z
rapa(lta,l, ~- )f ar a,,!, , - , . . . - .-.. . I I i! f ~
ASSOCIATION. 7 1 .cr)- te-k ~,ni r-?-. 4

T. 33~54-65
!ACCEtSION HRI AP5005313 I i. I.", jf,
AUT11ORi Imcnkov, A. 11, oi, C. 410 V ,
kz~,~L 4~Lj -V--0.-, TS .1, --: 11 1~ny
'TITLEt RocombinAtion radiAtion In GnAo tunnel_ -n junctions
i FLz1ka tvardogo tole, V. 7, no. 2, 1965, 634-636
TOPIC TAGSt tunnel effect,- tunnel p n junction, p n Junction, recombi-
nation radiation, recombination, gallium arsenide
'ABSTRACTt The dependence of.the integral inttnsitz of radiation fonthe
'Current I in the range of current densities 50-10 amp/cm2 can be rep-
resented in the form of the sum of two members 4 43 - A(T)ln +
103(T.I). where the member 0 th:i +
3(T,1) is the part of radiation inten-
sity which is added to the Intensity 42. The fact that stacertainvol-
'tage the volt-ampere characteriatic and the curve of the dependence of
;the radiation Lntansity on voltage display a "hump" indicates that the
Iexcess currents connected with tunnel transitions contribute to the
~radLatLon. Contrary to the findings of other researchers (e.g., Andor-
!son, R.p Froc. IEEE, 51, 1963, 610), no radiation in the region of
1cord 1/2

L 33954-65
!ACCESSION MKI AP5005313
negative conductivity of tho tunnel diode was detected. Orig. art jZLI
!has: 2 figures and 2 formulas.
1ASSOCIATIONs FizLko-takhnicheakiy inatitut im. A. F. loffe, AN SSSR,
.1 Leningrad--(Physic&l-Tachnical Inatitute,AH SSSR)
iSUBMITTEDi 31ju164 EHCL.OSUREj 00 SUB CODEt S S
!NO RZF'SOVo 001 OTHERI 004 ATD PRESS13209
Card 2/2

M,NYMT, A-11.; K(l-*M(-rl, M M.; rIAnjl,F;D('V, P.N.; TOSAREMKOll
I I ll.v.
El,f!~trorl-hc2n transition in heavily degerierate
the cane of superhigh current densities. Ftz. tver. tela 7 nc.~,:
1480-1485 I~y 165. fMIRA 13:5)
1. Fi-.Iko-.tekhni.cheskiy Institut Imeni Ioffe AN SSSIR, D-ningrad.

E-IT(m) 1T4*DMW IMP(b)/94
AP~V
25 C
Lin 01 m1097101013115131a
AUTHOR. I Y. A. 4D An If.
menko XDZIDT. M. M. I Meakin, S. Naslodoyl D.
Toarenkov.
r
ORO: Physicotechnicii Institute im. A. F. Toffe, AN SSSR, Leningrad (Fizlko-tekhnlI
nsfItut All SS
cheaklY I
TITLEs The affect of Impurities on the recombination radiation of galli arsenide
SOME; Mika tyerdogo tols, Y. 7, no. 10, 1963, 3113-3118 v-7 .
TOPIC TAGSs recombination radiation, gallium arsenide, pn junction, Impurity.
acceptor, donor
ABSTRACT: The affect or ;90 Cdq Mn. und Fe impurities on the recombination radiation
of GaAs p-n Junctions"49it'dxperimentally Investigated. The junctions were formed by
direct diffusion of the element, by simultaneous diffusion of No and Cd and Fe and
Cd, or by diffusion of Mn and then Cd or To and then Cd Into n-type We with an
electron concentration'(Nn) of 5 x 10,16-3 x 1016 cm-3 (crystals with Nn ~- I x lO17eW3
were doped with Te),~The junction un was 10-3-10" cal. The recombination spec-
X-
tra were measure a 7 and 293K in the photon energy range between 0.7 and 1.6 ov.
The spectra were recorded at direct injection currents at which the energy of the
short wavelength band was independent of the current. The expet;Imental data are giYeL-
in Fig. l.and Table 1. The band with hvx&x ai 1.01 ev (YTK) and liva" a 0.95-0.98 ov
:ord 1/4

ACC NR. AP5025399
Fig. 1. Recombination radiation of
n-GaAs p-n junction doped viths
:0 ~, ~Sl`lll
1 - Cd; 2 - Hnj 3-- Mn and then Cdj,
- Yot-5 - Fe and then Cdj

ACC NJU AP5025399
.1able 1. Photon energy In the band peaks an d band halfvIdthe
Upirity Woo.. ad
to 71 1.48 1-47
: i;; 137 Im

ww