SCIENTIFIC ABSTRACT TALEV, R. - TALIK, T.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001754730009-5
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: July 13, 2001
• Sequence Number: 9
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

__ .-- - If I ~ I I" -k,7'
TALEV, Riato, inz. (Skoplje, Lenjinova 65)
Determining data for the construction of combined, so-called
carbogen curves on the basis of their similarity to circular
and transition aurves, known as clthoids. Tehnika Jug 17
no.8:Su,T)pl.: Saobracaj 9 no.8:1589-1592 Ag 162.
1. Vodeci projektant Projektantskog biroa "Pelagon4da",
Skoplje.

TAIEV, Risto, ing. (Skopje, Lenjinova 65)
knalytical and graphical methods for the determination of data
for making simple and double (S) curveB on the Itevis of similarity
of circular and transitional curves in the form of a reversed
curve. Tehnika Jug 17 no.4:658-662 Ap 162.
1. Vodeci projektant. Preduzeca "Projektant", Skopje.

IIALEV, idato) in-; - ("ko, 1 `-z' T I I
, a P-J 3 65 )
Taburnel, i) a pklt-,ern for dicta ~!CM3truCtior, C-`
any c-ir-jular and tz-,nsltion clothoid curvat:ire. Tehnika Jug
18 17 S "3.
0
I. Vo,,Aeu.L pvc)jclkLart projiukt~,mt-tjkoL--~ preduzeca "Projekt~mV.
SkOplje.

TALEYSNIK, S.L.
Case of total rachischisis. Vopr.neirokhir. 23 no.2.-32 Mr-Ap '59.
(MIRA 12:4)
1. Kafedra. gospitalluoy khirurgii Karagandinskogo meditsinskogo
instituta i 1-ya, gorodskaYa. klinicheskaya bollnitea Karagandy.
(SPINE-ABNORMITIES AND DEFMIITIF.S)

ICAL",Ys~ilKj 3.1'.
i 0
His tviini"corltent of the blood In patients during the acute period
of clos,~,-d cerebrocranial 1,rawm. Zhux. nc.,vr. i ps1kh. 61 no.9:13/,2--
131,5 161. (w!l J-/,: 9)
1. Stalinskiy nauclino-issiedovatel'skiy institut travTnatologii i
ol-topsdii (dir. - 'kand.med. nauk T.A.Rever-ko).
(HISTAIME) (BELAIN-WOUNDS AND INJURIES)

TAII-ISI-1K, S,L.; TYUPIE, V.114.
Case his-~-oi77.c---, csteogenesis Lriperfecte tarda. Nov,khir.arlkl.
nr,~/,.-W-72 -62~ (11,97~- 15!5)
1. Donetskiy nauchno-issled ovate 1 'skiy institut trawlatologii i
ortopedi4.
(OSTEOPSATHYROSIS)

ftl 'nter
Effect of the "er -)r on the Groi In an',
e
He,: L:-ta.,- 'r of llyl.r~d Cherry Tlre,~,-;." 29 :)ec ~;2, ln~:t of Plant --~h.vsio--
i K. A. Timir.-.azev. (Pissertat --,-n for the reared of Candi,~ate
in Biolorical ~7ciences).
Vechernavalaoskva January-Deceqber 10.52

TALEYSNIK.Yo.D.
Influence of a mentor plant on the growth and winter hardiness
of cherry hybrids. Trudy Inst.fiziol.:raBt. 9:153-202 '55.
(MLRA 8:8)
1. Institut fiziologii rasteniy im. K.A.Timiryazeva Akademii
nauk SSSR.
(Hybridization. Vegetable) (Cherry)

TALEYSI"-IK, To.D.
Structural characteristics of cover tissues in some earl7-blosso!3ing
.Far Eastern plantsidth reference to their resistance to sunburns.
Dokl. All SSSR 131P no-3:721-723 S 6o. (MLqA 13:9)
1. Gorno-tayezhnaya stantsiya im. V.L. Komarova Dallnevostochnogo
filila Sibirskogo otdeleniya Akademil nauk SSSR. Predstavleno
ak-ademikom A.L. Kursanavym.
(Maritime Territory-Plants, Effect of heat on)
(Plant cells and tissues)

TALEYSNIK. Ye.
1---
Type diversity in the Sakhdlin cherry. Bot.zhur- 46 no.6:869-
872 i-e 161. OMU 14:6)
1. Gornotayezhaaya stantiya imeni V.L.Komarova Dallnevostochnogo
f:Ll.i&la AN SSSR, g. Ussuriysk.
(Cherry)

DS &D/HM
SOURCE CODE: URj0413/66/000/01T/0030/0030
DIVENTOR: Alekseyev I F, A-; Balashov, V. A.; Gershonok, M. I.: Grachev, 1. M.;
yegorov, H. A.; Koby.L'nitWka_y_a_T=; Kozlov. D. A.; Lifshits, A. I.; Mondrus, D. B.4
-Plairshin, N. A.; Rashevskiy-, A. L.; Rivkin, A. E.; Tallgen, A. A.-;-Kh'ansuvaroy, A. A.
ORG: none
TITLE: Device for high frequency soldering of lead-acid storage batteries. Class 21,~
No. 185368
SOURCE: Izobreteniya, promyshlennyye obraztay, tovarnyye znaki, no. 17, 1966, 30
TOPIC TAGS: metal soldering, storage battery
ABSTRACT: An Author Certificate has been issued for a device for high-frequency
soldering of lead-acid itorage batteries. The device containsEn h-f generator vith
an external tank circuit, a multiloop inductor with open ferrite magnetic circuits, a
conveyor with a lifting table, a control desk, and an asseriblin-a-soldering former
equipped with a magnetic screen fastened on a non-magnetic base. Orig. art. has:
1 figure.

0 .I
ACC 060321,89
Fig. 1. 1 - H-f generator; 2 external tank circuit;
3 - inductor; 4 - conveyor; 5 - lifting table;
6 - control desk; 7 former; 8 screen; 9 base.
SUB CODEt 10,13 SUBM DAM 24 Mar 65

TALi, V. S.
"Phamiacomostic Study of Tanacetum Vulare." Cand Pharm Sci,
fartu State U, Tartu, 1::,55. (Kil, No 10, Ylar 55)
SC: Sum. No. 670, 29 Sep 55--Survey of Scientific and Technical
Dissertations Defended at f-TSSR Higher Mucational Institutions (15)

Jan.
C i a 7-3 .

L t;

01 i2

RAMLYAN, M.G.; KHAIIAMIRYAN, A.A.; BAKHCHISARAYTSEVA, S.A.;
TALIASHVILIJ, B.A.; MKRTCHYAN, K.T.
Desiliconizing pure potassium aluminate solutions.
TSvet. met. 35 no.7:45-51 J1 162. (MIRA 15:11)
(Potassium aluminate)

MANVELYAN, M.G.; KWAMIRYAN, A.A.; MKRTCHYAN, N.T.; BAKHCHISARAYTSFVA, S.A.;
TALIASHVILI
Desi2iconization of pure potassium aluninate solutions.in presence
of chemical-additives. TSvet. not. 35 no.11:66-74 N 162*0
(NIM 15sll)
(Potassium aluminate) (Silicon)

MANVE.I.YAN, M.G.; KIIANAKIRYAN, A.A.;-,TAI,IASI[Vll,l, B.A.; NIFOGOSYAN, B.V.
OU)BIKYAN, L.G.; SIEPANYAN, M.G.
Desilicification of sodium-potnssium alliminate solutions.
Izv.AI4 Arm.SSR.Khim.naiiki 17 no. 3:283-28c) 164.
(MIPA 17:7)
1. Institut khimii Gosudarstvennogo koniteta tsvetnykh i
chernykh metallov pri Gosplane SSSR.

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conducted with m("T d lycry-talso Q44FTheradla-
tton wag mosti iation. It was found that far
.the polycrystal A, which
;Wake CdS suitable for application in registration. devicee
-
"
Le. where the current Increase will be a Mear func4jon oi j
the intensity. of the Incident x-ray beam. W. J.

G. -B..;
re on selenhun zeER
X-mj
k- Azer-
bOW-han. S.S.R. 12i 4*-8(l956XW Russian).-trrmiatida
-f- or x-raTia ion (Maid' Cnew
of se 0.
material4ith t
rectifier
1.313 results in dirmf triCusformation of
of quanta.
at energy mto Wzc.; the cel!s pr . by de tion, of Se On
~pd
lyarec;o;-~r CdSw onns e
terml
gof
biyacuum spau
ia
with
top ejec
'-. YK~
m I., wit the
t of
tibn from C(p results in ilevelopuien e
ekdtrode becoming -negatively d. Curv
Ing;
the photocurrent to external resistance iw5uch are,
shown. The system is also verb sensitive to x-rad
G.N.
~4-
'T
Em"k. agadmwm -amt6% ,

:7 14
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-

09393
SROV/137 -r~,q -4 - 8426
9; 4, P 156 1 USSR
Mrar.slat.lon from.,. Rel'
2 Ll. 2 Ci
AUYqOR -Jallbl, M,A,
UP - abl-- i, Form')laa for Valve
Expe riment -1 Cl,-2ck- ". on, 41-11 - Appi I _'V
Pho- -Pmf tc. CdS .- 5~~ an-i Cd._q~_ - Sr-
. to
FOUIODITCAL; '1zj.. AS Az_erb, SS-F. Be_r, r., , 19.58, Rr 4, -rip 3. 41
'Azerb
AESIRACYT-_ !he mrjthor m,~~asursd photo-im" and lph for
--"IS - Se a;:--,i Cd,5-e - Se rect_'fleiv systems; t2he bar:,Ic-r la,~--ir was
I'll-xmiriated by T -rad'-a'ion, light and X-ray :Lmytestigatiroms
we.7-3 car-ied c:,'at clonven ,Ion a! systems wltL &rt-,Lfl,~Ial laya-_
and iri~to ba--k DlaL-=- .~Ys-ram5, Exvsrim,5nt~-" data were -us6d to :check-up
the applll~;ablll~y of th=_ for-mu-i.a on th~L betweEn photo-emf,
short-~_Ir,null. phri-.o~curr5rt 1 h and Bafllra'ion -n,-
0 /T
-7~vaansltlon under vaiv.=_ elsmen~ f;.:ind�tlc~ns)~ k-T /e Ifi t' Iv~r' -0 j
th- for-nula was d~!r.~:v.-_d on :.ri--- baslS of thc- dl~:d-_- t1tiecry, Ffie:)reticall
and =5xperi_mental kT/e are comoaz-ad, Most satisfa.---t-orv agresmel-_
car-d 1/2 ef Such da-a was ob_~~:-~;ed -'vi th-~ na~-7--w -azge c' ba.-,'-- -.--)ltA_;,- Qf L-50 nrv,

69398
SOV/137-59-4-8426
Expe-r1mental C heck-Up on the Applicability of Formulae for Valve Photo-emf to CdS - Se
and '-dSe - Se Systems
corresponding to the saturation current. It was thus established that the formula foi-
the -.ralve photo-emf can be used within a limited razige. It is also supposed that -the
effective charge of charge carriers in the investigated systems is equal 'to the free
pho"o-electron ~-harge, at least within the range of application of the valve-photo-emf
th~-ory. This statement is also justified in the case of equal back-oltage vali;j~-c; for
any wavelengths and for any radiation intensity, exciting the valve photo-emf,
Card 2./2

BAKIROV, M-Ya.; TALIBI, M.A.; ABDULIAYEV, G.B.
Effect of the electroforming, thermo-and electrochemical processing
on physical processes occurring in selenium photoelectric cells [in
Azerbaijani with summary in Russian]. Izv. AIT Azerb. SSR. Ser.fiz.-
tekh. i khim.nauk no.6:43-53 t5B (MIRA 12:2)
(Photoelectric cells) (Selenium) (Electrochemistry)

82113
SOV/81- 59 -6-18324
Translation from: Referativnyy zhurnal. Yx~Imlya, 19501, lir t6, 0 35 (USSR)
IL-i 7700
A UTHOR - Talibi, M.
The Action of Gamma-and X.-Rays cr- ~Le Electrical Frope-11'es of
'ITLE;
Cadmium Sulfide and Selenide
FERIODICAL, Tr. In-ta fiz.i matem, AS AzerbSSR, 1-958, VrI Q- pp 10-19 (Azer-
baydzhanian; Russian summary)
ABSTRACT: The results are cited of an I_nveStiga~i:n of *.h-e acticn of
radiations of radioactive Cc and ti,,e X-ray radlalaon cf a tube wi-,:-h
Mo-anticathode on Uie electr,_c ccriduI-'.I,.Iry of Cd3 and CdSe. The
volt-ampere, lux-ampere and c"her charac-'~eris-_c_= were studied and
also the inertia of the electric cond-,~ctivity of -.he studied objecTs
under the action of X_ and t- rays, The results of the work prove
that the effect of the radiaticnE on -he electrl.~ conductivity of
semiconductors in the case of high-energy quar,-,a as well as visible
light is determined mainly ict by tfie characrer of the icnzation
process proper, but by Lhe behavior cf the charge carriers libe-r-
ated in the substance as a result, of ln,,ernal icrIzat'_rr..
Card 1/1 R. A.

TALIBI, 14.it.; jBDULLhYNV, G.B.
the electromotive force and resist~tnce of selenium
rectifier cn116 wib.iontod to radiation. Dokl. All lizerb. SSR 14
zlo.1:1,1 "15F. (MIRA 11:2)
1. [111ititIlt '.IZIICI i gULtOmatiki AN A-zarbiLydzhanskoy SSR.
(Selenium calls) (Photoelectricity)

TALIBI, M.A.; ABIHJLLAYEV, G.B.
. -:, - ,
,_o_,
Calandating the efficiency coefficient and quantum yield of barrier-
layer photocells produced upron the incidence of penetra'uing radi-
ations. Dokl. AN Azerb. SSR 14 no.3:201-205 158. (MIRA 11:4)
1. Institut fiziki i matematik-I AN AzerSSR.
(Photoelectric cells) (Gamma rays) (X rays)

TALIBI, P.A.; ABJDULL~YEV, G.B.
--"" " Ami,licabiliV Of the the-orv of the ba-rrier-la7e- p~~--toelectromotive
- 0 2
force to selenium cells. Dnkl. Ali i-'-z"r"-,). SSTI- 1` 15 .
(MIRA 11- 7)
I.Institut fiziki i nntef:vitik-i All' Az6rSSZ.
(Selenium cells)

AUTHORS: Talibi, M. A., Abdullayev, G. B.
S/058/62/000/00-3/089/134
Ao62/Alol
TITLE: lnvestigation of the effect of r-rays, X-rays and neutrons on the
electric properties of CdS-Se and CdSe-Se~rectifying systems (Theses)
PERIODICAL: Referativnyy zhurnal, Fizika, no. 8, 1962,-31, abstract 8E227
(In collection: "Fotoelektr. I optich. yavleniya v poluprovodnikakh",
Kiyev, AN USSR, 1959, 401) V'/
TEXT; Results are given of investigations in a study of the effect of light,
I- and X-rays on certain electric properties of CdS-Se, CdSe-Se semiconductor
rectifying systems and of their components. It has Deen sho,~n that the p-n junc-
tions of the given system are sensitive to X- and ?-rays. The dark conductance
and the photoconductivity of CdSe polycrystals show a linear variation with the
increase of the voltage applied to the sample, independently of the kind of the
operating irradilLtion. Identical characteristics were obtkined (volts vs amperes,
lux vs amperes, etc) independently of the kind of the Irradiation operating on the
CdS, CdSe,*CdS-Se and CdSe-Se samples. The possibility was ascertained of appjj__ing
Card 112

Investigation of the effect of ...
S/058/62/000/008/069/134
Ao62/AIOI
MOM-3 with a CdS- and CdSe-crystal for recording the ?-rays and the X-rays.
0. Shustova
[Abstracter's note: Complete translation]
.1 J, -
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Card 2/2

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R~a:"hw):;" J fach -.-trticle.
S) I I eY P, I I 1-C.:: !11I
TABLE 0?
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orgarl
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CONDUCT(AIS)
OF S EMI
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D
Crystals
Ryvkirl , S %Jln-atmentr"
Card 3/ i6

Ph n to- I ~-i'; "t, 1 (4 11 a ( Con L L3 V,
to -.n I i ~n:i SIT-cl.rai
Gross, Yt,. F., `nd 'V. fl-r,---15zariniz to- Structun,
. I . - -~ ill- - .. ~ i 1- 1~
of Abs orp V. I on , R id I a :Dn Pl-'r.) i ec ~; l"i I- Ef f-'- a 1~~ie Edv~--
of' Kiln Abc~,orpt-.Jnri or CdS)e (,'rystuals ('-lVhese3)
!.r. I "., '. V. '- -' L "
Broud~?, V. L. , 1% :.-k*lll~'J1.'k"' , tll'i i . . k
t' rTl 71 n ci Lurn IT i ~~n I; i i :5 11 .1 r- s ta 1 213
k. V. V. IMI. h
D1 s t ~ ~l bi I f (i S I
Tempe ra~u
n' . I n v -2 s I, L I,) of I I
StrLICUIIZ-','~ r).L' OIL' AD3()rF5Z.100 [SD2CrrUMJ
of CdS r- t.Dl
Gross., ~4. A.
cat'd

omena sov/ 3140
tical Fnen
an'i OP
'rUrrj 1%
[Spep.
0 IP
a- tl-ie Fdge of the Main Ad
Viy, and B. V. 3~'ru,:!,!~ure
Ye. A. A. Kaplyans Cu-vve3 of Crysta13 Low 66
es e S
some optical and Photoelectric Properties 74
Vjsh(~,hakasj Yu* K* 3, Lay-rs*
c)r p,),.,,,,,ry5Taljine A Fedorus Pe,_ujiarirIe3 5
N, 1., and G - ry3tals
(,,dSe -;ngle C
1 1 t 3.- a,J r -.? S~
p,.,to,~Onducr-jng CdSx 1 -,x
d I. N. Ageyev- Dependency
jyvkin, an rd,Se
S M. C,mpos, 'rion ofc
R- YA on
KhanFevarOv ej' !'For7Djdden," ZOne
1- *
of
S.1'-d S.Olubion he Generation of an
ye. A., and G. A . Fedorus, T CdSe Single- a6
c current. in (,dc-!- and
t..n et r i
TrC~ores%!~r.ors

op- ral Pheiome-na ( 6 0",
7,
KOIOMJ,!ets.
and B
f,ct in Cd'!-'e and
Ef -
cd T e
n Of
-.-gario
cc
G.
ar
-;Crr, Bond Erergj
-tals
Toji,
Exc'-,T,O!"5
Theor'Y O~
T'l
T, Z, ard E. Mh ~ D!, -
r" bn us Fieid
9~-
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-.0
3. n
0

and optical Phenomcna (("wit.
B 'I ~ L. T~ie Ef fec +.- of Surface He~~omb-'n,7 ;~~On Gn ',~ne Pihc~
,j
,7~:,-)nrJu,--,,4vity of a Semiconductor (Theses)
Buymi.z.i.rov, V. M,, and M. F. Deygen. Adiorpt.ion 9t7 ~,Agh~,
b~,
U) Impurity in Crystals of the Germanium T.,ipe 133
T, V. Invesrigation of' the Recombination rroce--~s
'..n `-n~-rri-ial Centers in Germanium 1.33
Ukhanov, 'tu. I. Investigation of the Spec-rrum of infra-red
.Ray Absorption by Minority Carriers in Germanium
~Jkhanov, Yu. I. Investigation of the Modulation of the Op,~Acaal
Trainspal-ency of Germanium in the Region of a p-n. Junction 0
iglii~3yn, M. I. Improvement of the Photoelectiric Met~iod of
Meaat,--ing IV-he Length of Diffusion Displacement of Nonequilibrium
Carriers In Semiconductors (Theses) i48
4. Other Semiconductors
C L-1 '*1711' 'L6

and Optical Phenomena (CInt, Sov/3114o
Ye. F., R. P. Zakharchenya, and P. P. Ya-,-11,13kiy.
D14a-magnel.-Ic Leved's of an Excit-on fmr-esesI
I. Phot-00-lectric Properties of a
Contact
A-) r v,:~k -11y, A. I., M. N. BI'Lyy, and A. L. Mk
17
Effe- - c," Nickel and Iron Impurit, Les on
Pr~opL~rt--Iies of Cuprous Oxide
A. I. , and A. L. Pvacltiev. T~ie
of Fh-otoe-lectric "Fatigability" [Sensitivity Diailrjuti-on! in
C,jL)rour,, Oxide
Karl.&-anin, Yu. I., and G. P. Peka. The- Effect of an Ioni,--
ElectrLc Field on the Luminescence of C,i-Drous, Oxide
Tu:~h-hik. Ch. B., F, N. Zaltov, and G. G. Llyd'ya.
Specr-rophotometric investigation of Electuron-Hole and Exciton
16 4
3/16
Card, .0

and Optical Phenomena (con t. S 0 VI/ 3 1
uct~_ sses in A' kall-Halaid Crystals
L
Murygirl, V. I. Negative Photoconductivity of Selenium
Fhotop-lectric Cells With Positive Sign of the Photoelectro-
niic -,' ve Force
, T~
Koloml~' rets, B. T., and B. V. Pavlov. Displacement of the
F.Jtl~fe of the Absorption Band in Vitreous Semiconductors of the
3,:.- -As Te 12, G i
, " _01~~M A32Se3 2 3
Ver',;sner, V. N., and A. M. Solov?yev. "Electronographic"
LCombined Electro-Microscopic and Radlographicl Investigaulon
of rhe Composition of Lead Sulfide PhotoreS4stors According
no Lhe Thickness of Their Layers
Vertstier, V. N., B. V. Gorbunov, and Ya. A. Oksman.
Structural Peculiarities of Photosensitive Sb S La--ers
(Theses) 2 3 212
Ca rd :,)/,' 1 b

Ph o t o e 1 er4 --J Ff-nornae'na (cont. S Ov/ 14 c,
and Chlorin~~, 233
Ccrduct.1vity Spectrum of
Vishnevskly, A. K~
Th In Lead S.- 1 2137
Konozenke, -7. D~ --r-ed Gor--ductivity Spectrum of Thin
Lead Sulfildr-, Films 240
Kot, ?41. V.. Electrical, Optical, and
'14,-In Films of the A!-Sb System 245
FORCFS IN SFIMICONDUCTORS
Terenin ', A. 1,11 Ex~711-large of Semiconductors With
Adsorbed Mcl-,ule~ 255
Tolpygo. K. B. Kinetics of Photoelectromotive Forces
in Homogeneoij3 3~-mi 268
Card ii/

Ph otoel, ec ' r kcr ~no_men a (con t S011/3140
A- 7a7tanyan. The "Rectifying"
Karpovich, N, Az
Effect of '.1;e F-rce 'n Photoelectric Cells
Employ~ng Dy-. 290
Akimov, 1. A., i,-~,-! V-_ F, !:a',-Yk,_,. The SIgn of Photo-
electric Curr-!~-,. and t-re Relaxation of' Photocon-
ductivity in a,-~ 311.ver Iodides Sensitized by
Organic Dyes 301
Putseyko, Ye. K_ S~-,E.,,'tllzatlon of Photoelectric Effect in
Inorganic by Qrzzanic Dyes (Theses) 314
Kolomiyets, B. T., arl-i 7.1. !,.,. Lar-lohev. Investigation of
Photoelectri,~ cf Sem!~Ianductors of the PbS
Group by Con-Je.nO,~_-r Met'-~od 3 16
Kozhevi,-!, V. 7e. '_"ne of Nature of Condenser
Photoele-,~_r~'~ EtTe-r. 318
Card 12AII.-~-

ph Cor, t. sov/,-,14o
Vav-).Iov, V N. ar-d V. M. Malfwet-Bkaya.
, ri v'3 0, A -3 Cori
I
'
l - 345
R;uii.wi
. E
ot riIr ,,r
w,.
Ryvkin., S. M~, -1. S-~rckar. and L. L. MaIccl1r;3kly. The
Kinetlc3
E, n, t rt~,n -
W-;tt Role (P-til
Junctlo!- 360
Bugay. A, A... a,-,.,I Yg~~ '7-r-manium Pnotoelectric-

e i La,
C

,j

67
Kolorril,
yet-~t, B~ T..,
A,

ratusevich. New
0. and S.
Types and Design-s ot" and Their Cfiaracteristl~ts
( The s. ea .) 371
Sal'kov, Y-, A_ a nd A- F~~Iorus. Photoresistors of
CdSe Singie Crysta l-i Wlf-~! Low Felaxation Time 3)' 3
A!"j,jn~j ~iF
_9_D, RADIATTO~jS 0~',
HA

C a rd

Fno~,-)-Iertric Optical P11'.1enomena ) c~ ~ )3 11. ()
Vitov5~kiy, N~ A., P. I. Maleyev, and S. M. Ryvkin. Mechanl3m
of ".*he FormIng of impulses in Crystal Counters During .-he
Formation of a "Through Conducting Channel" 379
RyvkIn. S. M., L. P. Bogo-,!iazov, B. M. Konovale-ko, and 0. A.
Matveyev, Semiconductor Pickups for Indicating -Radiation 386
Akhvlediani, Z. G.,!. D. Konozenko, and V, I. Ust*~,?,nov.
The ?/ -Corjuctivity of CdS 389
Nekrashevich, I. G., and V. I. Shcherbakova. The Photo-
electric Effect of X-Rays on Semiconductor Rectifier Cells
(Thes1s) 396
Arkhangel-Iskiy, A. A., I. V, Voroblyev, and G. D. Latky.zhev.
Test of the Use of Photoresistors to Record ~ -Rays in
Engineering* 398
Card 15/!6

and Optical Phenomena (Cont.) SOV/3140
Tal'bi, M. A., and G. V. Abdullayev. Inve3tigation of the
R s, X-Rays and Neu-Irons on t~--- Electrinal
3 ~- ay
Propertle f CdS-Se and CdSe-Se Rectifier Systr~ms (The~~e5) 401.
AVAILABLE. Library of Congress
TM/mmh
Card 16/16 2-8-6o

A3DULLAYEV, G.B.; BAKIROV, M.Ya.; TAIIBI, M.A.
Effect of the area and material used in the upper electrode on
the photoelectric properties of selenium piiotoelectric cells [in
Azobaijani with summary in Russian]. Iz-.. All Azorb. SSR. Ser. fiz.-
tekh. i k~Um. nauk no.1:7-10 159. (MI-RA 12:6)
OPhotoelectric cells)

TALIBI, M.A.; ABDULTAYEV, G.B.
Studying the affect of gamma radiation on the semiconductor
systems CdS - So and CdSe - Se. Izv.AH Azerb.SSR.Ser.fiz.-
mat.1 tekh.pauk no.4:23-34 '59. VOU 13:2)
(Gamma rays) (Semiconductors)

RAKIROV, M.Ya.; ABDULLAYEV, G.B.; NASIROV, Ya.N.; TALIBI, I.I.A.
Studying the effect of certain factors on the characteristics
of selenium photocells. Izv. AIT Azerb. SSR. Ser. fiz.-mat. i tekh.
nault no-5.-65-74 '59. (MIRA 13:3)
(Selenium cells)

RAKIROV, M.Ya.; ABDULLAYEV, G.B.; ITASIROV, Ya.N.; TALIBI, H.A.
Yffect of the degree of crystallization of selenium on the
characteristics of photoelectric cells. Izv. AN Azerb. SSR Ser.
fiv.-mnt. i tekh. nauk no.5:93-99 '59. (MIRA 13:3)
(Selontum cells)

8 (0)
SOV/112-59-1-139
Translation from: Referativnyy zhurnal. Elektrotekhnika, 1959, Nr 1, p 14 (USSR)
AUTHOR: Talibi,_M,_.,4..--,--
TITLE: Use of Photoresistors in Recording Intensity Variations of X-Rays
PERIODICAL: Tr . In-ta fiz. i matem. AS AzerbSSR, 1956, Vol 8, pp 29 -43
(Summary in the Azerbaydzhan language)
ABSTRACT: Bibliographic entry.
Card I[ I

2730-66 EWT (m) - QS
ACCESSION NR: AT5023798 UR/0000/62/000/000/0189/0193
AUTHOR: Abdullayev. G. B.; Talibi, M. A.
TITLE: Method of using cadmium sulfide photoresistances in a recording x- and.V~R-
ray dosimeter
SOURCE: Soveshchantye po probleme Deystviye yadernykh izlucheniy na materialy.
Moscow, 1960. Deystviye yadernykh izlucheniy na rnaterialy (The effect of nuclear
radiation on materials); doklad-v soveshchaniya. Nlos-r-w, 17A-vo AN SSSR, 1962, 189-193
TOPIC TAGS: cadmium sulfide, photo vt~,q istan,.., r-i4iation dosimeter, x ray measurement,:
gamma detector
ABSTRACT: The article describes a possible method of using cadmium sulfide photo-
resistances as sensing -elements in a recording x- and gainma ray dosimeter including an
MOM-3 tube megohmmeter. Single-crystal photore_Qi,,-,!_uwes produced by the Institui fizilki
AN USSR (Institute of Physics, AN Ukr. SSR) were employed in the experiments. The
dosimeter circuit permits a continuous successive recording of the intensities or rates of
radiations directed on the working sitrfuce of each individual photoreeii3tance. The proposed
Ca rd 1/2

I
ACCESSION NR: ATS023798
rlosi---:~er was tested with a large number of photoresistances on URS-70, GUT-M-400-1.
and R1*~,N1--'11%I urkits; the dose rate varied from 3 to 2000 roentgen/min. 'Me use of CdS
-Crvstals in coviibination with MO-11-3 as the dosimeter presents a number of advantages,
since the calibrated resistances of the instrument cover a wide range- This permift
measurements over a wide radiation intensit-y range and the plotting of calibration curves
Fw- various photoresistances but the Same MOM-3. The recalibraLion of the scale of MOT4-
3 Frvni resistance units to dose rate units is discussed in terms of the relationship between
the resistavice and the Intensity of the current pa" Unvugh aa x-ray tube with various
an"'Kies (tungsten, raolybdentun, iron, copper). Orig. art. has: 4 figures, I table, and 2
formulas.
-NSSOCIATION: None
SUBMITTED: 18 August 62
NO RE; F SOV: 007
i Cwd
ENCL: 00
OTHEk- 002

-30420
S/056/6i/000/009/042/050
/3 AOO1/AlO`1
AUTHOR: Talibi, M.A.
TITLE: On origination of emf at bombarding p-n transitions in CdS-Se and
CdSe-Se with fast electrons
PERIODICAL: Referativnyy zhurnal. Fizika, no. 9, 1961, 237, abstract 9E484 ("Izv.
AN AzerbSSR. Ser. Piz.-matem. i tekhn. n.", ig6o, no. 4, 79-83,
Azerb. summary)
The p,-n transitions CdSZ.Se and CdSe-Se were bombarded with 40-75 kev
electrons. Dosimetric and 1nverue volt-ampere characteristics of specimens were
investigated at the action of electrons and preliminary illumination w1th vlalble
light. Within the range of the electron energies employed, the curves of depend-
ence of short-circuit current on accelerating voltage and on the square of accel-
erating voltage (dosimetric characteristic) do not show any tendency to satura-
tion. Linearity of do3imetric characteristics of the specimens makes it possible
to use them for dosimetr;k of electrons. The author presents inverse voltampere
characteristics of one of the CdS-Se specimens, operating in the photodiode manner,
Card 1/2

3o42~
On origination of emf ...
S/058/61/000/009/042/05o
A001/A101
at the action of electrons and at the joint action of electrons and light. The
behavior of current carriers originated under the action of electrons, light, and
dark current carriers, is the same. 4-
V. Patskevich
[Abstracter's note: Complete translation]
Card 2/2-

S/08 1 /6 i/ooo/022/0 14/07 6
B-102/BlOS
AUTHORS: !,Ianafly, Ye. !,, Talibi, Pil. E.
TITLt Some r-ronerties of native haienite from the
Azerbaydzhanslcaya SSR
P'LRlGDIC.~L: Referativnyy zhurnal, Khimiya, no. 22, 10~61, 89, abstract
22G49 (Izv. kN AzerbSSR. Ser, fiz. matem. i tekhn. n...
no- 6, 1960, 01'9--7')
1EXT: Photosensitivitv and somE:.- outical properties of native halenite
samoles were investigated. The samrles contained Fe, Al, Ag, Mg, Si, Ba,
Ca 4CU, S~:, Zn, and Sr impuritJes ~-,hich were detected by spectral
anal,..sis, The !.~.ttice constant -was found to be 5 89 L-A'bstracter's
no t e': flomolete translation.1
C I.-I r L, 11

31511 S/058/61/000/010/007/1()O
I. k000 AOO1/A1O1
AUTHORS: Talibi, M. A., Yusifov, A. 0.
T=,: on some specific features of the effect of X- and gamma-rays on
electric resistivity
PERIODICAL: Referativnyy zhurnal. Fizika, no. 10, 1961, 57, abstract 10B171
(Izv. AN AzerbSSR, Ser. fiz. matem. I tekhn. n.", 1960, no. 6,
91-97, Azerb.summary).
TEXT- The authors investigated sensitivity of CdS to ionizing radiation
with the purpose of constructing small-size dosimeters for X- and ? -rays.
Variation of dark resistivity in dependence on intensity and wave composition
of an operating short-wave resistance served as criterion of sensitivity. 20
specimens having almost equal sizes were investigated. Intensity of a dose was
determined by means of an ionization chamber with walls of an air-equivalent
material. The results obtained are represented by graphs. The measurements
have shown that sensitivities of CdS sensors are different even for equal doses
of radiation with different wave composition; therefore, every sensor should be
calibrated Individually.
,rAbstracter's note: Complete translation]
Card 1/1

C/, Ll 3y.6 (1()o-3,, 1P141
AUEHORS la*--bi M-A Abduilaye~.,.
T 1-M-E. C(,ncf~rnlng a correla' I or, be tw~on tm, -c a ;a--
of ,1rA r;tdlu-: 'd 1h;, !MP,r- ;,C;r,
PERIODICAL ReFerat -ijnyy -,hurria-1 , F i zI Ra nr~, 1.:~ 3, 7 -IL:
1 1 11; A
ANI AzcrtLSSR, -t -try)
T EXT: The effect of doling Se wirn Ft. Aw F
- 4 n%, a
properties of Se and of selenium p-n jijnc~lons
st rat ed t hat t he hi ghe r the f i r s'~ i oni za7 i on po r en' 11al. c ~ie mp and n c
-3maller its a*omic radius (r), the lower is *he teq~erature a- wn.-,:n impazt
zation appears. At constant temperature Hne '.,~~wcr -T' and ~ne r, k-
i5 the voltage at which-, impact ionization appears- Witti decr~--,--~ing n,mber
and lrnpurity concentration, the impar!T~y ac-.iva-.-ion energy 6's rlse-z ex-
ceot-ion of Ga) AE is Inversely propor~-,'Ionai 2 ~he diffn~r~-nce and r
of So and those of the imjyriTy. A~:ccrd-,ng- ~o -e da'a In -z
4
,egic-ere" ex----nd-~ ro a numter ~~f
lard

weer,
1) nar,v :~t?m i cr)rvju, lorfluu; ind!~ rim
AE,
pr,opor-,"Cina,
Dlnulry cornr~,.;
ev n-- 7
I-lz' rar- no,
-x-
~A7 rd .-)/ 2

3/249/62/018/007/001/001
D256/D308
AM IORS Talibi, I.I.A. and Abdullaycv, G.B.
TITLE: A nethod of estimating the i-ridth of the forbidden
band in some semiconducting 3-component compounds
PEIRIODICAL: Adcademiya nauk 4--erbaydzhan S'R, Doklady, v. 18,
no. 7, 1962, 17-21
TEXT: The binary rroups of the 3-component compounds in-
vestigated by Goodman (Goodman, C.H.L., Phys. and Chem. of Solids,
6, no. 4, 305, 1958) and obtained by substitution of one of the
conponents by an element belonging to the same group of the periodic
table, are considered. Folloi-ring the p.-reviously reported observa-
tion by the authors (Abdullayev and Talibi, Trudy Vsesoyuznogo -
Goveshchaniya po P-n pcrcl-.hodaxrf v poluprovadnikak-h, TasW.:cnt, 1961,
~n print), that the difference of the ionization potentials and the
atomic radii of the components can be useful for the estimation of
the width of the forbidden band, it is shown that a direct correla-
tion exists between the width of the forbidden band and the differ-
C ard 1/2

A I-'Icthod of estimating ...
S/249V62/018/007/001/001
D256/" -308
ence of the ionization potentials. An attempt is made to estimate
the vidths of the forbidden bands in some analogue three -component
compounds, assuming that the observed correlation does not depend
Lipon tlie position of the substituted element in the periodic table.
ASSOCIiYTION:
SU131-11TTED:
Institut fizileci (Institu'.:.2 of Physics)
January 12, 1962
C ard 2/2

TALIE1, -M. -A,--
PHASE I BOOK EXPLOITATION SOV/6176
Konobeyevskly, S. T., Corresponding Member, Academy of Sciences
USSR, Reap. Z6.
Deystvlye vadernykh izlucheniv na materialy (The FXfect of
Nuclear Radiation on Materials). Moscow, Izd-vo AN SSSR,
1962. 383 P. Errata slip inserted. 4000 copies printed.
Sponaoring Agency: Akademlya nauk 333H. Otdeleniye tekhni-
cheskikh nauk; Ot-11c-7.or.1-ye fiziko-matematicheskikh nauk.
Reap. Ed.: S. T. Konobeyevskiy; Deputy Reap. Ed..: S. A.
Adasinskly; Editorial Board: P. L. Gruzin G. V. Kurdyumov,
B. M. Levitskly, V. S. Lyashenko (Deceasedj,.Yu. A. Martyn V,
Yu. I. Pokrovskly, and N. F. Fravdyuk; Ed. of Publishing
House: M. G. Makarenko; Teoh. Edo: T. V. Folyikova and
1. N. Dorokhina.
Card 1/14

The Effect of Nuclear Radiation (con...) SOV/6176
PURPOSE: Thii book Is intended for personnel concerned with
nuclear materials.
COVERAGE: This is a collection of papers presented at the
Moscow Conference on the Effect of Nuclear Radiation on
Platerials, held December 6-10, 1960. The material reflects
certain trends In the work being conducted in the Soviet
scientific research orginization. Some of the papers are
devoted to the experimental study of the effect of neutron
irradiation on reactor materials (steel, ferrous alloys,
molybdenum, avia4 graphite, and nichrome8). Others deal
with the theory of neutron irradiation effects (Physico-
chemical transformations, relaxation of internal stresies,
internal friction) and changes in t~e structure and proper-
ties of various crystals. Special attention in given to
the effect of Intense Y-radiation on the electrical,
magnetic, and optical properties of metals, dielectrics,
and semiconductors.
card 2/14

The Effects of Nuclear Radiation (Cont.) SOV/r5l76
Pravdyuk, N. F., V. A. Nikolayenko, and V. 1. Korpukhin.
Change in Lattice Parameteru of Diamond and Silicon Carbide
.During Irradiation 184
T,-AbdulLayev, 0. 1B,) anq_B,,~_Talibi. On One Method of Using
Cadmlln--Sulfl:dii--Fhotore7sis~r~T~-~-ecording X- and Y-ray
DosimL~ter lag
KonobeyevBkiy, S. T.,. _M_Lev1t8k1,y, L. D. Panteley -ev, K. P.
Dubna-vin, V. ~I.-Kutayt-a-ev, and_V. N. Kdhev. ' X-Ray Ek-a-ana-
tion of Transformations in Copper-Tin Alloy Under Neutron
Irradiatlon
Levitakiy, B. M., and L. D. Panteleyev. X-Ray Rxamination of
the Relaxation of Internal Miarostresses In Cold-Worked
Metals Under Neutron Irradiation 209
Konobeyevskly, S. T., N. F. Pravdyuk,,!~_-,i_-_PokroVskiy, and
V.- I. Vikhrov. Eff eat of Neutron Irra iation on IftT617MI
-Priction-Ir.'::Xetals 219
Card 9/14

L 11195- EWT(1)/EWG(k)/BDS/EEC(b)-2-AFFTC/ASD/ESD-3-
'n vl_iz; I e, N
A 7-4," T/ ~. a % ~ /
AC CESSION NR-. AT3.002973 S/29Z?/62/000/000/0012/0017
AUTHOR: - AbdullMev, G. B. Talibi. M. A
TITLE: Correlation in semiconductors between the activation energy and the
ionization potential and atomic radius [Report at the 11-nninn ennfarAnna An
Semiconductor Devices, Tashkent, 2-7 October., 19611
SOURCE : Elektronn"y-*rochny*ye perekhody* v poluprovodnikakh. Tashkent., Izd-vo
AN UzSSR, 1962, 12-17
TOPIC TAGS: selenium rectifier,, activation energy, ionization potentialt atomic
radius
ABSTRACT: Studying the effect of strong field on p-n transition in lmpurity~type
selenium rectifiers is important as it may permit controlling the electrical and
thermal characteristics of these rectifiers. The authors investigated reverse
cl=ent-voltage characteristics of selenium rectifiers containing Ga, Pb, Ag, Fe,
and S! as impurities at the liquid-nitrogen temperature. Also the effect of
temperature (-80 to +20C) on the cutoff current of the above rectifiers was
determIned. Experimental data is compared with the published data of other re-
searchers, and the following conclusion is drawn: the closer ionization potential
Card 1/2

L
ACCESSION NR: AT30029173
and atomic radius of the impurity to those of the semiconductor propers, the higher
is the activation energy of the impurity in the semiconductor. Orig. art. has-.
2 figures and 6 tables.
ASSOCIATION: Akad. nauk SSSR(Academy of Sciences SSSR); Akad. nauk UzSSR(Academy
of Sciences UzSSR); Tashkentskiy gosuniversitet im. V. I. Lenina, (Tashkent State
University)
SUBMITTED: 00 DATE AcQ: 15mav63 ENCL: 00
SUB CODE: 00 NO IMF SOV: 010 OTHER: 006
ls/~T2
Card
----------- ----
. . . . . . . . . . . . -~w
L
~M-, TYR W7M7M1i i., �R

W!5/6j1bb016WeWM1
A052/AI26'
AUTHORS: Abdullayev, G.B., Manafli, E.I., Talibiv M.A.
TITLEs On the effect of some impurities on the impact ionization
mechanism in selenium rectifiers
PERIODICAL: Referativnyy zhurnal, Elektronika i yeye primeneniye, no. 3,
1963, 22, abstract 3B137 (Tr. Soveshchaniya po udarn.
ionizataii i tunnelln. effektu v poluprovodnikakh, 1960. Bakut
AN AzerbSSR, 1962, 83 - 86)
:TEXT: The effect of Ga, Pb, Ag, Fe and Si impurities on the inverse
branches of volt-ampere characteristics of selenium valves was investigated
in the temperature range from room temperature to -1960C.. At low tempera-
tures a "freezing" of thermal oscillationc of the lattice takes place. A
thermal background weakening makes it possible to investigate more accurate-,
ly the physical processes conditioned by impurities. It is shown that in
the negative temperature range thi inverse current temperature dependence
changes considerably with the change of the kind of impurity. The rate of
inverse current growth with temperature and voltage is determined by the
Card 1/2

B/275/63/000/003/012/021
On the effect of some impurities ... A052/A126
value of the lot ionization potentiall of impurity atoms. The lower the
value,of the lst ionization potential of the impurity atom the higher the
rate of inverse current growth. The dependence of the conductivity of the
sample on cutoff voltage is conditioned by impact ionization leading to the
ionization of impurities. An increase of ionized impurity conoentration in
Se leads to a decrease of the p-n Junction thickness. There are 6
references.
L.B.
~[Abstraoterls notes Complete translation'.]
'Card 2A

-rqj)!.r F~ I j
ABDULLAYEV, G. B. ; B A K I 11")V, iMi. f u. -, T~ 3 : f~ f, M. A - ; 6:1,-; Y 1, -- , I . , -
-aleniu-, -~-i-,-h z~ a tura "ion current. !Z-v. .4-N
- I
Az--rb. SSR.Ser, 4-1 tekh. nauk no.!,-~77-83 '--3.
(MI RA 16: !1)

AEDULLAYEV, G.B.; ALEKPPWVA., Sh.~L; TALIBIY M.A. - BEK3ROVJV M-Ya.; GASYMOV, R.B.
Saturation currents in selenium p-n junctions. Dokl. AN Azerb. S,)R 19
no.l.-9-12 163. (~HRA 16:10
1. Institut fiziki AN AzSSF~
(Junction transistors)

AMULLAYET., G.D., doktor fiz, Pinter. nauk; 7ALIBI, M.A., kand. fiz.-
matem. nauk
Conference on the Study of Selenium and Tellurium, held Jn Baku.
Vest. AN SSSR 33 no.10.-113-114 0 163. (MIRA 16:11)

Ik 1~
t c c e
L

L 17726-66 T7WT(l)/EWT(M)/9TC(f )/&1G(m)/T/E[NTP(t) IJP(c) RM1/GG/JD/GS
ACC NR- AT6001331 SOURCE CODE: UR/0000/65/000/000/0037/0041
AUTHOR- Talibi M. A, ; V
ORG:
TITLE: The effect of certain factors on the surface of 9r-_
SOURCE: -AN AzerbSSR. Institut fiziki. Selen, tellur i ikh primenenive (Selenium ,
tellurium and their utilizationy. -Baku, Izd-vo AN AzerbSSR, 1965, 37-41
TOPIC TAGS: selenium, surface property, crystal growth, nucleation, illumination,
etched crystal, metallographic examination, metal physics, pn transition
ABSTRACT: The effects of crystallization time, illumination and etching on the sur -
faces of selenium layers (50 to 70p thick) weye-studied in an effort to clarify the
mechanism underlying the growth%j~ The Se films were obtained by vap-
or deposition of technical--g-r-aa-eSe containing 0.03% Br impurity on alLoinum sub-
strates. The substrates were maintained at a constant temperature of 1300C; crys-
tallization time varied from 5 to 60 min under illumination from a red bulb and a
neon lamp as well as under zero illumination. The data (presented in the form of
micrographs (loon)) illustrate the effects of the above variables on the nature of
Card-1/2

L 17726-66
ACC NR: AT6001331
the crystallization. In darkness spherulites of Se crystals were observed after on-
ly 15 min, while at longer times the diameters of the spherulites increased accord-
ing to the following empirical relation:
d = 0.36t + do,
where d = diameter (mm), t = time of crystallization (min) and do = 0.2.10-2 (mm).
The increase in diameter was due to the increased growth rate which at 10-20 min was
estimated to be 246 p/hr. After 30 min at 1300C, the density of spherulites was
250 mm 3. The results obtained for illumination and etching after 10 min of crys-
tallization at 1300C (1000 were similar to the above; that is, the appearance and
the dimensions of the spherulites did not change. The etch used was a 50/50 HN03/
1H2S04- However, when the films were immersed in boiling water (after 10 min pre-
liminary crystallization in the dark), changes in spherulite size and background
were noted. These changes were caused by the reaction SeO2 + H20 = H2SeO3. The
effects of the above surface changes were postulated to have an influence on the pn
transition properties, however, further work in this area was planned. The authors
express their gratitude to Professor G. B. Abdullayev for his interest in the work
and for his discussion of the results. Orig. art. has: 2 figures, 2 formulas.
SUB CODE: 11, 20/ SUBM DATE: 1OMar65/ ORIG REF: 003/ OTH REF: 008
Card 2/

L 17728-66
ACC NR: AT6001333 0
temperature coefficient of reverse current was a function of the type of impurities;
the smallest change occurred for Si whose ionization potential was closest to Se.
The capacitance decreased with temperature, again the smallest for Si, reaching a
constant value of I of/cm2 at 1250C for 9v and for 25v--l Uf/cm2 at 1000C. The
Schottky formula l/C2 = 87r(U t U dV E eN was used to calculate the concentration of
ionization impurity centers (H A-acceptors; ND-donors) where C is the capacitance
of the transition, U is voltage in the shut-off direction, E is the dielectric
constant and e is the electronic charge. Data showed that N Aand ND for all cases
decreased with temperature and the lower values at the higher temperatures (above
1000C) were caused by the filling, up of deep defects in both Se and CdSe. Accord-
ing to the data, activation at the deeper levels resulted from the joint action of
a strong field and temperature. The decrease in reverse current with temperature
was the result of a decrease in N. A comparison of this stork to other semiconduct-
ing systems was made. The formation of SiO, Si02 and Si202 and its effect on de-
creases in if was discussed. It was found that Si additions to Se raised the speci-
fic resistance by one order. An extensive literature survey of the effects of im-
purities on the electrical properties of Se-CdSe elements is appended. The authors
Card 2/3

I
L 17728_66
ACC NR: AT6001333 I
express their gratitude to Professor G. B. Abdullayev for discussion of tile re-
sults and valuable advice, Orig. art. has: 7 figures, 1 formula.
SUB CODE: 11 20/ SUBM DATE: 1OMar65/ ORIG REF: 027/ oni mr; 022
Carl~_3

L 16505-66 &n(l)/zIT(m)//F2c(LP)/FiG(m)/glp(t) IJP(c) R W/JJD/G3/A2
ACC NR: AT6001334 SOURCE CODE: UR/0000/65/000/000/0085/0094
,AU`rHOR: Abdullayev, G. B.; Bakirov, M. Ya,i Talibi M. Ao; Gasrnov, R. B.
IORG: Z341
:TITLE: Photoeffect in selenium pn transitions
'7
iSOURCE: AN AzerbSSR. Intitut iziki. Selen, tellur i ikh primeneniye (Selenium,
i
ftellurium and their utilization). Baku, AN AzerbSSR, 1965, 85-94
:TOPIC TAGS: selenium, intermetallic compound, impurity conductivity, semicondicting'
material, spectrum analysis, temperature-dependence, diffusion coefficient, metal
,physics
'A,
ABSTRACT: Photoelectric properties of selenium photocells containing Cd, Pb, Ga,
.In, Zn and Hg as contact films were studied.. Diffraction analysis of the junctions
ishowed that the selenide intermetallic compound formed in each case; these junctions.,
.exhibited n-type conductivity and caused photovoltaic effects due to pn transitions.
:Spectral characteristics are given for Se with CdSe, InSe and HgSe, showing primary
.and secondary maxima for relative photocurrent (%), the secondary maximum being de--
Pendent an the type of element. Photosensitivity showed a dependence on time, sample
:Card 1/2

L 17729-66 hWT(m)/XfC(f)/EWb(M)/hWP(t) IJP(c) WAI/JD/GS
A(C NK: AT6001336 SOURCE CODE: IJR/0000/65/000/000/0115/0121
AUTHOR: Abdullayev, G. B.; Manafli- E. I.; Talibi, M. A.
ORG:
TITLE: The effect of certain impurities on the capacitance of transitions in
Se-CdSe
SOURCE: AN AzerbSSR. Institut fiziki. Selen, tellur i ikh primeneniye (Selenium,
tellurium and their utilization). Baku, AN AzerbSSR, 1965, 115-121
TOPIC TAGS: selenium, cadmium selenide, capacitance, impurity conductivity, tem-
perature dependence, selenium compound, oxide, carrier mobility, diffusion transis-
tor, metal physics
ABSTRACT: The changes in capacitance were given as a function of voltage displace-
ment at both 200 and 800C for Se-CdSe elements made with impurity additions of Ga,
Fe, Pb, Ag and Si. The temperature dependence of capacitance was presented for
these impurities and for constant voltage displacements of 9, 15 and 25 v. A sharp
decrease in the temperature coefficient of capacitance was observed for the higher
Card 1/2

L 17729-66
ACC NR: AT6001336
voltages at about 100OC; above 1000C it became constant. An exception to this was
Ga which made its transition at 1250C. These data were correlated with oxide forma-
tion, diffusion effects and ionization potentials. Because the ionization poten-
tial of Si was closest to Se it was least effective in raising the capacitance.
However, increases in concentration (e. g., 0.0001% to 0.1% Fe) lowered the capaci-
tance. The diffusive capacitance rose sharply with direct voltage at 200C, where-
as at 1250C it did so only for Ga and Fe; the temperature dependence of this ef-
fect was given for 0 and 0.3 v. A relation for this capacitance was given as fol-
lows! C = (el/2kTh,
where e is the electron charge, ~ is Boltzmann's constant, T is absolute temperature,
I is direct current and T is the lifetime of carriers. The dependence of the ef-
fective lifetime ref is given as a function of temperature and impurity content.
For Ga and Fe Tef the dependence was weak compared to pure Se, Ag and Si and the
values Of Tef were calculated to be 10-5_10-6 sec. Orig. art. has: 10 figures,
1 formula.
SUB CODE: 11, 20/ SUBM DATE: IOMar65/ ORIG REF: 005/ OTH REF: 007
Card 2/

L 17730-66 EWT(m)/ETC(f)/EWG(m)/h-WP(t) LJP(c) Mi/JD/GS
ACC HR: AT6001337 SOURCE CODE: UR/0000/65/000/000/0122/0124
0
AUTHOR: Talibi, M. A.; Krutenyuk, Ye. G.
ORG:
TITLE: The effect of a sodium impurity on certain properties in selenium components
Institut fiziki. Selen, tellur i ikh primeneniye Ilenium,
SOURCE:- AU AzerbSSR. (S
tellurium and their utilization). Baku, AM AzerbSSR, 1965, 122-124
TOPIC TAGS: pn transition, selenium, cadmium selenide, semiconducting material,
sodium, impurity conductivity
ABSTRACT: The effects of sodium impurities on pn transition properties Se-CdSe
";- ical
were studied. A literature review of the effect of sodium on electric and opt
properties of selenium was presented; the sodium action decomposes the molecules of
selenium and accelerates their crystallization. Experimental data were gathered for
samples with up to 0.1 at % Na, the cadmium being deposited first (vapor) onto an
aluminum cathode and the selenium with Na as an impurity deposited next. Some
samples had 0.005% C1 while others had both 0.005% C1 and 0.1% Na. The components
.Card 1/2

L 17731-66 EWT(m)/WP(t) LJP(c) JD/Gc;
ACC NR: M 01336 SOURCE CODE: UR/0000/65/000/000/0125/0128
WNW: Abdullayev, G. B.; Talibi, M. A.; Hamedov, E. G.
ORG:
TITLE: The effect of Mn impurities on the rectifying properties of transitions In
Se-CdSe
SOURCE: AN AzerbSSR. Institut fiziki Selen, tellur I ikh primenenlye (Selenium,
tellu;T-Grand -their utilization). Baku, AN AzerbSSR, 1965, 125-128
TOPIC TAGS: selenium, cadmium selenide, temperature dependence, pn transition,
manganese, metal physics
ABSTRACT: A study was made of the effects of Mn on trap formation for transitions
in Se-CdSe. The Mn had an unfilled 3d shell and two 4s electrons. Static volt-am-
pere characteristics for one of the samples were given as a function of temperature;
a typical Se inversion in the temperature dependence on reverse current was ob-
served. For Se-CdSe junctions without additions and for additions other than Mn the
saturation of reverse current occurred below 130OC; with Mn, saturation took place
Card 1/2

L 39587-66 EWT(rn)/E.!7P(?.r) "STC(f)/EW~;(rn) '.r/~-.xp(t IJP(.,-' RIYS/JD '3
ACC NR: AT6001329 SOURCE CODE: UR/0000/65/000/000/0020/0026
AUTHOR: Abdullayev. G. B.; Tagiyev,.K. KI; Talibi, M. A.
ORG:
TITLE: Effect of sodium impurities on the optical properties of selenium
SOURCE: AN AzerbSSR. Institut fiziki. Selen, tellur i ikh primeneniye (Selenium ,
tellurium and their utilization). Baku, Izd-vo AN AzerbSSR, 1965, 20-26
TOPIC TAGS: selenium, ultra high purity metal, sodium, impurity conductivity, oxy-
gen, optic transmission, radiation spectrum, crystallization, metal physics,
absorption coefficient
ABSTRACT: The present work was undertaken owing to lacunae in the literature on
the properties of high purity selenium and the effect of impurities on the disper-
sion of selenium. The experimental procedure was described in an earlier work.
Formulas for the coefficients of absorption, X -fraction, transmission and Tflection
5and FS*
are given. The experiments were done on SF-10 -5.L-_4 pectrophotometers1for
samples with Na impurities and pure Se (99.9999%) at 3000K. Sample thickness (rang-
ing fr