SCIENTIFIC ABSTRACT STIKHIN, V.N. - STILBANS, L.S.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001653320002-9
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 3, 2016
• Document Release Date: August 26, 2000
• Sequence Number: 2
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

L 54749-65 ------
ACCESSION NR: AT5015396
uranium from 0. 026 M solutions of uranyl. fluoride by the ion excbangere under considera-
tion requires the presence of free HF in amounts no less Uian 0. 1 M In the original solution,
From the standpoint of duting capacity, the solutions studied can be arranged as follows:
1 N IIN03 > 0 9 N NH NO + 0. 1 N HNO > I N NH NO Uraniwn is eluted from EDE-IOP
;m AN_g 3 3 4 5'.
better than fr and with smaller volumes of No cluent. OrIg. art. has: 5 figure
ASSOCIATION: None
SUBMITTED. 13May65 ENCL: 00 SUB CODE: IC
NO REF SOV: 005 OTHER: 002
2/2
Ird

L 18403-63 EW(d)IBDS Pg-h/Pk-h/P1-h/Po-4/Pq-4 AMCIASDIAMCI
IJP(C) BC
ACCESSION NR: AP3003736 S/0103/63/0241,'007/0891/0899 ;71
AUTHOR: Stikhin, V. N. (Sverdlovsk)
TITLE: Feedback control systems with opposite interests
SOURCE: Avtomatika i telemekhanika, v. 24, no. 7, 1963, 891-899
TOPIC TAGS*. feedback control system, feedback
ABSTRACT: A method of finding optimum solution is formulated for memory-
equipped automatic -control systems. The method is based on a statistical
principle of loss minimax. For a no nois e -interference case, two systems whose
interests are opposite are described mathematically. Optimization problem is
formulated for both cases, with a fixed and with an indefinite number of switching
operations. Conditions of existence of optimum solution are determined for
recurrence of the normal-form game with a finite number of the opponent
strategies. Orig. art. has: 1 figure and 60 formulas.
Card

e
C R_ VV'6022688' SO CE CODE: U
A
C
AUTHOR: Kokovikhln, V.,A.; Stikhin, V. N Zhivoglyadov, V. P.
ORG: none
TITLE: On the Uieory of dutd control
SOURCE: Moscow. Institut avtomatikl I teleniekhan.11U. Samoobuchayuslieblyesyn
avtomaticliesklye WSCC@@i_iy (@clf -Ins true Ling -aut-oni-a-fle systenis). Moscow, Izd-vo Nauka, 1966,
il -209
1101
TOPIC TAGS: automatic conLrol theory, second order differential equation, differential
equation solution, approximation method
A138'MiACT: Various pursuit problems are considered In I] article. Methorlt-, foi- The solution
W
of fj)c:,c problems, based on notions of dual-control theor@"@ are proposed, and some experi-
1119iital Information is given. Blayestan stratel .11man formulation Is
_W in the Felldiran and Be
stodled, and the relation of the theory of approximation to the Bayestrin principle is analyzed.
La their computations, the authors have made a wide use of the optimnlity principle and the
@C1JJ11(jL1CG of dynamic programmIng. A numerical example Involving a wcorid-order differen-
ti,d equation Is soived, and Were Is a brief discussion of the work by V. P. Z111voglyadov.
Co
_rd

ACC NP: t@'1'6022(038
Orig. art. ilas-. 13 formulas.
12/ SIJBAI DATE: 02MarGf)/ ORIG REF: 003/ OTH REF: 003
SUB CODE: 090
Card

STIKHINA, S.
Club of submarine sportsmen. Voen.znan. 37 no.5t28 Yq 161.
(M33A 14s4)
(Diving, Submarine)

I 'I ,- @ - ; , ---1 - T- ; F -T
.I " I I /I
. CHNUA.K. P,G.: STlkHCVNlN. "iJAROYAlY. h;.!.; F.@;.
Conforoveni -1, ;nr".PrW parnarmel nf Vie -nin de,4.rtm9,nt6 of
the III n I at r*.-. Ut r,:.' . i (! c r. ma Wr, I n- a t r.'"114.v 157.
iR@,nl' '7j-@hlrem) (MLRA 10: 6)

KHOMYAKOV, K.G.; STIKHOVNIN, A.M., MIMIROVSKIT, I.I.; GUROV, P.G.
Branch conferences of production activists of the Nain Admin-
istrations of the Ministry. Stroi.i dor.mashinostr. no.9:37-38
S '56. (KwA 9:11)
(Machinery industry--Congresses)

STIIai4,,,,S,,-FANT0VA, B.;ZVOISKA, R.
- 4
hYfect of emotions on intensity of pain in labor. Cask. gyn. 18 no.3:
217-222 June 1953. (GUL 25:1)
1. Of the First Obstetric Clinic (Read--Prof. K. Klaus, N.D.) of
Charles University, Prague.

BUDINSKY, Josef, MUDr.; STIKSA, -Nmanuel; SIP, Bedrich, MUDr.
Imnrovement of obstetric analgesia with nhenothiazine preparations.
Cenk. gyn. 22[371 no.1/2:24-28 Jan 58.
1. 1, mr. klinika Karlovy university, prednosta Drof. Dr. K. Klaus.
J, B,, Praha 2, Apolinnroka 18.
(IABOR, anesth. & analgesia
phenothiazinO Drep. (Oz))
(MINOTHIAZINI, rel. cpdo.
in anesth. in labor 'Cz))

:JTJJK.';A. Ximimiol, M]Jlkr.; ",RP, Bodrich, MUDr.; BUDIN.';KY, Jo:ief, MUDr.
ClInic,11 exDeriences with oral chlorprornazine In labor. Geak. gyn.
22[371 no. 1@2:118-121 An 58.
1. L -ior. klinik-a KU v Praze, nrednosta orof. Dr K. Klaus. A. S.,
Prnhn 2, Apolinarska 18.
(IAROR, anesth. & analgesia
adjunct chlorpromnzine, oral admin. (Cz))
(GUORPROMAZINI, nnesth. & analgesia
adjunct chlorpro,qnzine in labor, oral admin. (Cz))

SKRIVAN, Jiri, BUDINSKY, Josef; STIKSA, Emanuel
Effect of neuroleptic drugs on uterine activity in labor. Cas.
lek.cesk.99 no.44:1389-1392 28 0 160.
1. 1. poroduicko-gynekologicka klinika, prednosta prof. dr.
K. Klaus, doktor lekarskych ved.
(CHLORPROMAZINE pharmacol)
(PROMETHAZINE pbarmacol)
(ERGOT ALKALOIDS pharmacol)
(LABOR)
(UTERUS pharmacol)

SNAJDI V., prof.; ANTOS, J.; LUKAS, V.; BOUDA, J.; BARDOS, A.; MANKA, J.;
HAJEXt A.; PACTN, Z.; SKACEL, K.; STIKSA, E.; SIKLq 0.; SKODA, V.
Clinical aspects of carcinoma of the ene,ometrium. Cesk. gynek. 27
no.3:173-177 AP 162.
1. 1 gyn. klin. fak. vaeob. lek. KU v Fraze, prednosta prof. MUDr.
K. Klaus.
(UTERUS NEOPLASMS)

Bulil""SKY, J. , CSc.; STINSA, E.; SiOdVAII, J.; FABIANOVA, J.; SRF ) B. ) c3c.
Neuroplegic obstetrical analgesia. Cesk. gyn. 27[411 no.5;
387-394 Jo 162.
1. 1. gynaor. klin. KU v Praze, prednosta prof. dr. K. Klaus, DrSc.
@@T&SIA OBTiMRICAL) (RIBEWIATION ARTIFICIAL)

STIKSA, E.; BUDINSKY, CSc.
A technic for medical management of labor with the use of neuroplagic
analgesic mixture. Cesk. gyn. 27(411 no.5:395-396 Je 162.
1. 1. gyn.-por. klin. fak. vseob. lek. KU v Praze, prednosta prof.
dr. K. Klaus, Dr.Sc.
(ANESTIMIA OBSTETRICAL) (HIMOATION ARTIFICIAL)

SNAID,V.,- STIKSA, H.
SurgeT7 of the ovaz-y. Cesk. gynek. 29 no.5035-33?7 Je'64
1. 1. gyn.-por. klin. fak. va5ob. lek. KU [Karlc-ly university]
v Praz--@ piednogtas prof. dr. K.Klauq; D!S%

SNAID, V. I ZAVADIL, M.; STUMA, E.
The overy in menopause. Cesk. gynek. 29 no.59341-345 J8164
1. To gyn.-p=-. klin. fakulty ,-s4F,,obe=eho lek. KU (Karlovy
uni.-rersity] v Pra:me@ pn@dnoata.- pr---f. dr. K.Klauep IhSco

KVAPIL, J.; STIKSA, E.: SNAID.V.
Ekporlences with anestbegia In gynecologl@,&l surgery and comments
on cui--ent probloms. Cesk. gynek. 29 no.5087-390 JaI64.
1. 1. gyn.-por. klin. fak. v9sob. lek. KU (Karlo-ry university]
v Prazze; prednosta: profe dro K*Klalas,, DzS(:**

STIKSA, Manuel
Basic clinical and experimental data on the electrical conduc-
tivity of squamous e Ithelium of the cervix uteri. Act& Univ.
Carol. (med.] (Praha5 10 no.2:139-164 164
1. 1. gynekologicko-porodnicka klinika fakulty vaeobecneho lekar-
stvi University Karlovy v Praze(prednostas. prof. MUDr. K.Klauz,
DrSo.)

STIKSA, J. MUDr. - STEPAN. J. . JUDr.
Now directives on modicolegal ex"ination. Cook. 2dravot- 5 no-1:
53-56 Jan 57.
(MEDICINZ, LAGAL. logiol.
on expert testimony In Czecbooloyakia (Cs))

BAWGH, J,,MUDr,; UTTL, K., MUDr.; STIE!,.J. NUDip
Snecialization for medical experts In Czechoslovakia. Cask. sdravot.
5 no.8:448-450 Aug 57.
1. Vysknmqv ustav organisace zdravotnictvi--odbor Dosudkove cinnosti.
(RIMT TSTIMONT, educ.
specialization in Czech. (Cz))
(SPICIALISM
exp,ort mod. testimony specialization in Czech. (Cz))

TIKSA, Jlri, MUDr.
Pr(bleras of medical characteristics of occupations. Cook. sdr&vot.
5 no.9:490-492 Sept 57.
1. Vyzkuwq ustay orgLnisace s4ravotnictvi odbor -posudkova ainnostl.
(OCCUPATIONAL DISMSM, diag.
expert mod, testimony (Cs))
(UPIM TOTIMONY, in var die.
ocoup. die. (Cx))

STIKSA, J.; DVORAK, B.; PALM, R.; SOUKUP, V.
svoluation of working ability. Cesk. zdravot. 6 no.9:5
3 40-547 Sept 58.
(DISABILITY 3VALUATION ((;z))
'@o
4
.1
i,

STIKSA, J.
.0
Current possibilities in the"Medical reatment of chrmic bron-
chitis. Cas. lek. oge . 103 no."30:823-830 27 JulI64
n@
1. Vyzkumny ustav experimentalmi terapie a Literni katedra
UDL, PraherKrc,- reditel: prof. dr. 0. Smahel, DrSc.

DAU"l, 11HO'bi'MOVA, L.; STIKSA, J.; VOEAC, "'.; VA,,T'G'VA, V.; HLOUSKOVA, Ze.
a:; 3 i"Sta rice: MACHANOVA, A.; I Ut',11A, B.; UPBA1,07A, A.
Diffusinp capacity of the lungs and its components in interstitial
pulmonary fibroses during adolescence. I-lev. Czech. med. 11 no.3:
IFO-189 165.
'I. 1wititute of Postgraduate Medical Training. Chair of Internal
Medicine. Prague (Director: Prof. 0. Svuthel, M.D., D.Sc.), Research
Institute of Experimental Therapy (Direetor: Ili-of. 0. Smahel, H.D.,
D.S)c.),,and Research Irlotitute of Child V--ve1cpment, Prague (Director-.
Ilroi'. J. Houstek, M.D., D.Sc.).

TLUSTY, L.; HIMSKOVA, Z.; KO!e,',R.; DAUMIS.; STIKSA, J.
The diffusion capacity of the lungs and its share in children
and juveniles after interstitial pneumonias. Ceek. pediat.
20 no.3.*392-395 Mr 165
1. 1. 4-4, ninik in 11radec Kralove; KinderklInik Po Petrinem.,
Prag; Katheder der Kinderheilkunde, Thstitut fUr 'artzliche Fort-
bildung, Prag; und Institut der experimentellen Therapie, Prag.

d, L.; VAVIVIA, V.;
T
lknetional chanres in diffuse pu-Ui,,,;@ary fibrosis. Cf,,sk. pediat.
'20 no.3:3'.('-'l71 Mr "5
I @ ,
I. Fecond Ch-'ldren's Clinic; Research Irstitute of Child Develr@p-
ment, and Research Tnstltute (,f men tal Therapy, PraMie.

DAUM, S.; NIKODYMOVA, L.; STIKSA, J.; VOIKAG, Z.; VAVROVAp V.; HLOUSOVA, Z.;
Technicka spoluprace: MACM110VA, A.; PLACHA, B.; UFBANOVA, A.
Diffusion capacity of the lungs and its components in interstitial
pulmonary fibrosis in adolescents. Cas. lek. Cesk. 104 no.49/50:
1366-1371 10 D 165.
1. Vyzkumny ustav experimentalni terapie v Praze (reditel prof.
dr. (). Smahel, DrSc.) a Ustav vyzkumu vyvoje ditete v Praze
(reditel. prof. dr. J. Houstek, DrSc.).

k(P th Od m
CZ_-@'C - .03LOVAI*@IA 616.1152.264-01 - 074
B.; Rojoarch Institute for &perim-
ental. "@o-l-,nopy, aik(I (,Ihnir C-r T.-o--nai Institute for
Postp:raduti:.o (Vy;-,,-a-Iny Uatav I-aperimentalni Te-
rapie a Intorni ."Irit;@)(Ira Ur,%;cru pro Doillcolovani Lellcaru), Prague,
Director Oiedi@ej_) Jr 0.
112xaminatLon in
Prar,ue, Casopis LoI.:-aru Co:31cych, Vol 105, 11o 26, 24 Jun 66, pp
699 - 701
Abstrnet CAuLitoral Eri@-,lisii sx?mrrry modified7: Values of partial
pressure of CO 2 in arterial- blood calculateTI on the basis of the
manomotric Vlol,(iod ro;::-),nrod to I.,hojo obtained by calculation
on the basis of' tho titration method, nnd to those obtained by
interpolation usini-, the method of Astrup and Siggaard-Andersen.
The manomotric i-.;cthod rind tao in-,,@,rpolation method agree with each
other much boti-ler than i4itli ttio titration method. Advantages of
using the Astrup and Sil-@*,aard- Andor3en mothod are described. 2
Figures, 12 Western roforonpes. (1,1anuscript recivod Doe 65).

MUSIL, Jan; STIKSA,-Jiri
Transaminases in medicine. Cas. lek. cesk. 101 no.34:161-172 24 Ag
,62.
1. Oddeleni, pro klin. biochemii lekarske fakulty hygienicke KU v Praze
10, prednosta MUDr. RNDr. J. Opplt Interni ka:tedra UDL v Praze, pradnosta
doc. dr. 0. Smahel, DrSc.
(AMINOTRAMINASES)

KOLIHOVA,E.; STIKSOVA,G.; JIRA,M.
Importance of pelvic arteriography in the diagnosis of bladder
tumors. Cesk. rentgen. 18 no.4:229-235 J1164
1. Radioldgicka klinika (prednostat prof. dr. V.Svab., ArSc.)
a I. chirurgicka klinika (prednosta: prof. dr. J.Pavrovsky)
fakulty v@seobecneho lekarstyi KU [Karlovy university] v
Praze.

VISHNNVSKIY, N.A., prof.; ABDULIAYIVA, V.M.; IVINOVA, Ye.A.; STIKSOVA, V.N. _
Sone changes In the crystalline
72 no.5:43-49 S-0 159.
(CRYSTALLINN LENS,
lens in health subjects. Test.oft.
(MIRA 13:3)
physiol.

VISHNINSKIT, N.A.1 ABDUMAYINA, V.M.1 IVANOVAp IYo.A.; KOTOVA, YO.S.;
KROTGVA, S.I.; STIKSOVA, V.N,
Critical evaluation of the significance of "initial signs" of
radiation cataract. Med. rad. 5 no.ll:?7-81 N 160. (MIRA 13-12)
(RADIATION SICKNEW) (CATARACT)

VISHNEVSKIY, N. A., prof.; ABDULLAYFIA. V, M.; IVANOVA, Ye. A.; KOTOVAY E. S.;
STIKSO@@,__V,_ N.- @Moskva
Initial symptoms and classification of cataract. Vest. oft, no.5.-
65-68 161. (MIRA 14:32)
(CATARACT)

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STILOUNS, L. S.
U19SR/Physics - Semiconductors, Hall Effect Jan 52
"Adiabatic and Isothermal Hall Effects in Semi-
conductors," L. S. Stillbans
"Zhur Tekh Fiz" Vol XXII, No 1, pp 77-79
Analysis of the finally derived expression shows
that the difference between the adiabatic and iso-
thermal Hall effects can, in only the most unfa-
vorable cases, reach several percent, whereas ac-
cording to Ganbl theory (Ann der Phy 20, p 293,
1906) this difference could be as large as desired.
Submitted 15 May 51.
206T103

tl,,;o f,h@! on Thein of Inz;i,-,nific-Lnt Ac-iraix@u.--.3s if Ct@er
2, ` 52.
-.:et, .13,11 ZhTF, 2-2 1, 1:p 121? 1!&. -

1 Jun 52
of I.Ilobilit,- of Electricity Carricrs In Semlconductore,*
Ye. TI. `ovyatkowt, Yu. !@, M,@SIIJCOvetnp L. S. Stilbm-s,, T.. 'S. Stavitakaya
"Dok AV. @Iauk- 56SR" 'Vol 84, No 4p rp 681-682
The relation u 0 AT-3/2 waa tested on silicon,, ,@(!rrvmlum and iuVrmetullic coz--,.d
SbZn L-n(II on r; ct' ex-, - c nsi-,m-d to be lntom-@ 'late Iletuern Acmic and
ionic In a tm,:r r-a,n 2(1-5COO. *lot-e," rvmdtr@ IndAc tc,d a re2ation u a AT-30
Tnl,'Wvt@--@ to Tlccelw-@' I A-r 52
232T99
qa.@@F-,N47

USSR/Physics Semiconductors FD-2819
Card 1/1 Pub. 153-2/30
Author Vlasova, R. M. and Stilbans, L. S.
Title Study of Thermoelectric Properties of Bismuth Telluride
Periodical Zhur. Tekh. Fiz, 25, 569-576, 1955
Abstract Ratio of thermoemf, conductivity, concentration and mobility of
current carriers of the alloy B12Te3 to temperature and to excess
of one component versus stoichiometric compound is studied. Re-
sults are illustrated in grajhs and tables. Gratitude for coopera-
tion Is expressed to S. N. Nikolayev anf F. I. Vasenin. Five for-
eign and one USSR references.
Institution
Submitted July 16, 1955

IOM, A.F.; STILIBANS L S.- IORDANISHVILI. U.K.; STAVITSKAYA, T.S.;
@r -o-; Isdatell sty&; PBVVM. U.S., takhatcheskiy
redaktor
[Thermoelectric refrigeration] Termoolektrichaskoe okhla2hdanie.
Moskva, Izd-vo Akmdemii nauk SSSR, 1956. 107 p. (MLRA 9:11)
(Refrigeration and refrigerating machinery)
(Semiconductors)

@ // @I/)(i i@@' Z j .
USSR/Processes and Equipment f,:,r Chemizal Industries. K-1
Processes and A,);,aratus for Chemical. Technology
Abs Jour : Referat Zhur - lGiimiya, No 9, 195'T, 33252
Author : Ioffe, A.,.Stil'bans, L Iordanishvili, Ye.,
FedorovLch,
Inst
Title : Thermelec-@ric Coolint- in RefriLeration Engineering
Orig Pub : Khoiodil'naya tekhnika, 1956, No 3, 5-16
Abstract : A brief consideration of the physical phenomena upon which
the thermoelectric cooinG is based, and a presentation
of the fundamental propositions of the theory of A.I.
Ioffe. A formula is for determination of the refri-
Ceration coefficient from which it follows that F_
does not depend on -.eometrical dimensions and shape of
the thermoelements but is determined by the physical cha-
racteristics of semiconductor materials (thermal and elec-
tric conductivity, thermo e.m.f. of thermoelement branches)
Card 1/2

Category USSR/Electricity - Semiconductors G-3
Abs Jour Ref Zhjr - FIZ.1ka, No 21 1957, No 4225
Author Stillbans, L-S,, lordanishviii, Ye.K., StavitskaYa, T.S.
Inst Institute-o-T -Semiccnductdrs, Academy of Sciences USSR, Leningrad
Title Thesmoelectric Cooling
Orig Pub Izv, AN SSSR, ser. fiz.., 1956, 20, No 1, 81-88
Abstract A.F. loffe'Is theory of the-rmoelectric cooling is explained. The
c(Inditions under which the highest cooling coefficient and the
maximum temperature dr is obtained are discussrd. Experimental
data are given for Pb;Z and the theoretical deductions are con-
firmed. The author lists practical applications of thermoelectric
cooling, developed by the Institute of Semiconductors of the Academy
of Sciences, USSR, jointly with the commercial organizations, such
as a dsmestic refrigerator, hygrometer, etc.
Card 1/1
G-3
U3Sfi/Electricity - Semiconductors
Abs Jour : Referat Zhur - Fizika, No 5., 1957, 1" 7
Author : YordanishVili, ye.K.,,Stillbans. L.S.
Inst :
Title ; Thermoelectric Miniature Refrigerators
Orig Pub : Zh. tekhn- fizikip 1956, 26, No 2, 482-483
Abstract : Semiconductor therMDcouples developed at the Institute Of
Semiconductors of the Academy of Sciences, USSR Mde It
possible to obtain temperature drops of 60 -- 700 and in-
dividual cases up to 800. Experiments are carried out
deep cooling with the aid of a three-stage setup (tvLat
stage -_ compressor refrigerating machine, two others --
thermocouple coolers). The temperature drop obtained
reached 1020. By way of a thermal load, a cb er with
a volume of one liter was used- In experiments on ther-
mostatic controly use was made of the reversibility of the
Peltier effect: the thermopile worked both as a
Card 1/2

Category USSR/Electricity - Semoconductors G-3
Abs Jour Ref Zhur - Fizika, No 2, 1957, No 4228
Author lordanishvili, Ye.K., Stillbans, L.S.
Title Miniature Thermocouple-7-eTYIg_e_r_aTO_rs
Orig Pab Zh. tekhn,. fiziki, 1956, 26, No 5, 945-957
Abstract The X inciples of the theory and design of thermocouple refrigerators
are considered. Equations are derived for the cooling coefficient
and for the maximum temperature drop of refrigerators made up of bars
of n and p-semiconductors. For deep cooling it is proposed to use a
multi-stage thermocouple battery, in which the cold junctions of the
fir'st battery cool the hot junctions of the second) etc. With this,
the temperature drop between the first and third stages reaches 60 --
700. Results are reported of experiments on combined cooling, in which
an ordinary refrigerating machine is used in the first stage, making it
possible to b,,ring the total temperature drop to 1020. Results of the
use of thezrmocouple batteries as thermal stabilAzers of smal.1 volum s
are described.
Card 1/1

IOYFN, A., nkademik; STILIBANS, L.; ICIRDAMISHVILI, Ye.; MCHOVICH, A.
Thermoelectric cooling in the refrigerating industry. IhOl.tekhs33
no.3:5-16 Jl-s '56. OaaA 9:io)
(Thermoelectricity) (Refrigeration and refilgerating machinery)

Z
z
USSR1 Laboratory Equipment. Apparatuses, Their
Theory, Construction and Application.
Abs Jour: Referat. Zhur.-Khimlya, No. 8, 1957, 27361.
Author A.F. Ioffe, S.V. Ayropetyants, A.V. Ioffe,
N.V. Kolomoyets, L.S. Stillbans.
Inst. Academy of Sciences I
0
Title Efficiency Increase of Semiconductor Thermo-
couples.
Orig Pub: Dokl. AN SSSR, 1956, lo6, No. 6, c-81.
Abstract: With a view to increase the ratio of the mobility
of electricity carriers to the heat conductivity
of the lattice, It is proposed to Introduce ther-
mocouples of substances possessing approximately
the same lattice constant Into the first named
crystalline lattice.
Card 1/1

Dokl.Akad.Nauk, L11, fasc-5, 1011-1013 (1956) CARD 2 / 2 PA - 1859
m - Oj63 mo* The curve for r . 0 is equal to the experimental curve if
m - 0,29 m0. Here m and m0 denote the effective mass and the mass of the free
electron respectively. When computing the theoretical curves for the depend-
ence of mobility on the number of carriers, scattering by admixture ions was
not taken into account, and conEideration of this scattering will probably
increase the slope of these curves for r - 0 and r - 1. This and some other
important reasons speak for r - 0 and against r - 1. Thus, there remains the
last step, i.e. to bring the relati 2 r - 0 into line with the temperature
c)n
dependence the mobility u @ T-5/2 within the range of high temperatures,
and u - T_3@25 within that of low temperatures. The authors believe that this
is possible only by one way, i.e. by the assumption that the free length of
path of the electrons is limited within the range of low temperatures by col-
lisions with the participation of only one phonon. The probability of these
collisions Increases in proportion to temperature and therefore it holds that
-1 -3/2
1 - T and u - T . Howeverp at higher temperatures collisions with seve-
ral phonons begin to play an important part. On this occasion at first oolli-
sions with the participation of two phonon8, and later, with a further in-
crease, collisions with three phonons etc. take effect.
INSTITUTION: Institute for Semiconductors of the Aoademy of Science in the
USSR.
PHASE I BOOK EXPLOITATION 1129
Stillbans, Lazar' SOlomonovichs Candidate of Physical and Nathemati-
-----C--a-j--8-Cienc e s
ovyye termoelektrokholodillniki (Semiconductor Thermo-
poluprovodYik rators) Leningrad$ Leningr. dom nauchnO-tekhn.
electric Refrige 98 P. (series: poluprovodnikil vyp. 12) 15,000
propagandy, 1957-
copies printed.
Obshchestvo po rasprostraneniyU 8 politicheskikh
sponsoring Agencies: kademiya nauk SSSR. In titut poluprov-
I rumchnykh znaniy RSFSR, A
odnikov, Fregor, D %; Editorial Board of Series: Ioffej A.F.
Tech. Ed.: cial-I (chiei d.); SominskiY, M-S-j Candidate of physical
Academi Sciences (deputy chief ed.), Maslakovets, YU*P-,-
and Mathematical ematical Sciences, SmolenskiY, G-A-, tor
Doctor of Physical and Math nces, shalyt, S-S-, DOC
Doctor of physical and Mathematical Scie I Candidate of
s, Regel , A.R
of Physical and'Mathematical Science SubashiYev, V.il' Candidate
Physical and Mathematical Sciencess
Card 1/5

TABLE OP CONTENTS:
Introduction 3
Ch. I. Some Information on the Electron Theory of Crystals 4
1. Energy spectrum of an electron In the atom and a crystal 4
2. Insulators, metals and semiconductors 9
3. Effective mass 22
4. Energy and speed of electrons in the conduction band.
Degeneration of electron gas 25
Work function and contact potential difference 28
Dependence of electron free path length on temperature.
Temperature dependence of mobility 30
7. Thermal conductivity of crystals 33
Ch. II. Thermoelectric Phenomena 34
Ch. III. Theory of Thermoelectric Cooling 41
1. Maximum temperature depression 41
Card 3/5

Semiconductor Thermoelectric Refrigerators 1129
2. Cooling factor of a thermal battery 45
3. Multistage batteries 47
4. Selection of materials for thermoelements 50
5. Consideration of Thomson effect in the energy balance of
a thermoelement 54
6. Preparing the contact of semiconductor thermoelements 59
7. Methods of measuring electrical conductivity, thermoelec-
tromotive force, and thermal conductivity 61
Ch. IV. Principles of the Design and Construction of Thermal
Batteries 71
1. Construction of a thermal battery 71
2. Design of a thermal battery -(4
Ch. V. Practical Applications of Thermoelectric Refrigeration 80
1. Household refrigerator 80
2. Deep freezing 85
3. Micro-refrigerators 87
4. Applications of cooling thermoelements in meteorology 88
Card 4/5

PHASE I BOOK EXPLOITATION 258
Akademlya nauk SSSR. Institut poluprovodnikov
Poluprovodniki v nauke i tekhnike (Semiconductors in Science and
Technology) v. 1. Moscow, Izd-vo AN SSSR, 1957. 470 p.
23,000 copies printed.
Resp. Ed.: Ioffe, A.F.; Tech. Ed.: Arons, R.A.
PURPOSE: The collection of articles "Semiconductors in Science
and Technology" is intended for a wide circle of engineers
and technicians.
COVERAGE: The first volume of the collection presents the principles
of semiconductor theory concerning electric conductivity,
thermo- and galvanomagnetic properties, contact phenomena,
diffusion and thermoelectric properties. A description of
semicondlIctor. devices and their fields of application is
given. References are given after each article.
Card-1/19-

Semiconductors in Science and Technology 258
difficult problem of semiconductor technique is the creation of
heat-resisting semiconductor materials with given electric and
thermal properties to be used in economically profitable thermal
generators. The author considers the scientific, technical and
economic importance of the semiconductor problem to be equal to
that of the problem of utilization of nuclear enefty. He presents
some general ideas on the electric conductivity of solids and on the
concentration and mobility of current carriers (v. 10) on the charge
sign of current carriers in semiconductors; on the intrinsic
and impurity conductivity of*semiconductors @P: 36@; on the relation
of semiconductor conductance to temperature p 49 ; on semiconductor
photoconductivity (p. 61); on the influence of a strong electric
field on semiconductor conductance (p. 68); on the influence of
various corpuscular radiations on semiconductor conductance (p. 74),
on the influence of deformation (P. 78); and on conductance of
liquid, amorphous and polycrystalline bodies (p. 80). A table Is
given of the numerical values of basic physical parameters which
Card-3/19

Semiconductors in Science and Technol;-.9Y 258
diffusion coefficient is close to the value of the complementary
.1 t, C.
thermal conductivity (p, 88).@ Cxrystal lat4-1--e 'hermal conductivity
is also analyzed. There are df-igrams and 3 references (2 Soviet
and I a translation).
Ch. III. Stillbans, L.S. Electron Statistics in Semiconductors 95
This article expla-iri-8--the Ferm-1 statistics and the Fermi-Dirac
distribution function. There are 8 diagrams and 5 Soviet references.
Ch. IV. St,111bans, L.S. Thermoelectric Phenomena 113
The article explains the nature of the Peltier and Thomson
effects. Between 1930 and 1956 loffe, A.F. developed a qualitative
and then a quantitative theory of thermoelectromotive force and of
thermo-emf semiconductor generators (p. 115). The TOK-3 type of
thermoelectric generator based on Ioffe's Ideas and designed under
his supervision Is produced in the USSR as a power source for the
collective radio stations of the @'Urozhay" type In regions where
'there Is no electric power s*apply (P. 115). Other models cf
higher capacity are under development. In 1950, Ioffe, A.F.
Card-5/19 -

Semiconductors in Science and Technology 258
developed a theory of thermoelectric cooling with semiconductor
thermoelements. The Semiconductor Institute, Academy of Sciences,
USSR, has already developed a domestic refrigerator and other
devices based on this principle (p. 115). -The author derives
formulae for the Peltier factor and for the thermoelectromotive
force using two different approaches: (1) either to obtain the
Peltier factor from kinetic considerations and then to find the
thermo-emf from the Thomson formula,or co-aversely, (2) to find a
formula for CX (the thermo-emf factor) and then to obtain the
Peltier factor from the Thomson relation. He investigates two
components of the thermo-emf, namely the contact and volumetric,
and then studies the third component, the carrying along of
electrons by phonons. According to the author, this phenomenon
was first investigated in metals by Burevich, L.E. in 1945 and
later (1951) in semiconductors by Pikus, G..Ye., who derived a
formula for this source of thermo-emf (p.*122-123). Further
investigations of this phenomenon by non-Soviet researchers
are also mentioned. A method of measuring the thermoelectric
properties of semiconductors and the agaratus used for this
purpose are described in detail (p. 126 . Acomparison of experimental
and theoretical resultc obtained for semiconductors and semi-
metals-is made (p. 129) and data obtained by Gokhberg, B.M. and
Som'inskiy, M.S. are presented (p. 131),. It was found that
ca@(!:i@_6/19

SemIconductors In Science and Technology
258
agreement of results is obtained only for temperatures above
-300 C, and only for certain groups of materials. There are 11
diagrams and 3 references (2 Soviet and 1 translation).
Ch. V. Stillbans, L.S. Galvanomagnetic Phenomena 133
The author discusses galvanom" gnetic phenomena occurring in
conductors of the first type (i.e.j in materials in which the
current is carried by electrons and not by ions) when there
is a simultaneous action of the electric and magnetic fields.
He takes Into consideration the case of perpendicularity of these
fields when galvomagnetic phenomena attain their maximum.
Descriptions are given of the Hall effect (P. 137) and the
Ettingshausen effect (@. 141); of conductance changes in a
magnetic field (p. 142 ; of thermomagnetic phenomena (p. 144);
of methods used in measuring semiconductor conductance and the
Hall effect (p. 14-5). There are 8 diagrams and 3 references
(2 Soviet and 1 translation).
Ch. VI. Pikus, G. Ye. Contact Phenomena 148
The author presents the theory of contact phenomena in
Card V15-

Zurn.techn.fis.gl, favc-1, 30-34 (1957) CARD 2 / 2 PA - 1993
amperage. Here 6a(H) and d a(0) denote quantities which are inversely propor-
tional to the resistance of deliquescence (conductivities of probes) at the
magnetic field strength H and in the case of a lacking field respectively.
In the case of low amperages dependeace is linear and if concentration is di-
minished a considerable saturation occurs. From similar measurements carried
out at sufficiently high temperatures on a sample with homogeneously worked
surfaces the velocities of surface recombination were computed and are shown
in a table.
The modification of the resistance in a magnetic field was determined on a
sample with different recombination velocities on the lateral surfaces from
the voltage drop between the probe and the current electrode. A diagram
shown the modification of conductivity in dependence of 0the amount and the
direction of the magnetic field at a temperature of 320 K. In the case in-
vestigated here the modification 6 6(� H) of conductivity consists of two
parts: A 6(� H) - A a q (H) + Al lin (H). Here A aq(H) denotes the ordinary
term which is necessary for the improvement of the trajectories of the current
carriers, and 6 a lin (H) denotes the linear term which occurs because of the
modification of the concentration of the carriers. This linear part passes
through the origin of coordinates and to proportional to the magnetic field
strength in a wide domain.
INSTITUTION:

STD,'RtNS,, L.S.
-I vp @i
f4642. A@4 jNVESITGAMN Q F ME :rHrR!TQ2-L!@,,:TFT--
'o
71, te i Ftz., V,,!

ire gi-en cmpL!4-AI)! ex, -I
c-I S wtth 7elwtt-, jl
torm
Rayle%g6 -:n(Ir1w,g ut

SUBJECT USSR / PHYSICS CARD 1 / 2 PA - 1954
AUTHOR STILIBARS L 'S
TITLE rn Z-he C_o_jl@Na ion of Semiconductor Termoelements.
PERIODICAL rn teoh fig. 211faso.1, 212-213 (1957)
Issued; 2 / 1957
According to theory (A.F.IOM, Poluprovodnikovye termoelementy eemicon-
ductor thermoelements), published by the Academy of Science of the USSR,
Moscow-Leningrad (1956)) it applies for the degree of efficiency of semicon-
ductor thermoelements used in thermogenerators and coolers that
Z (7y + 2.
2)/ JQJ 2Q2 Here a I and a20 q, and Q2' jYj and 2
denote the coefficients of the thermoelootromotoric force, the specific re-
sistanceo and the heat conductivity respectively of the branches of the
thermoelement. In the most simple case, i.e. that both branches have the same
parameters, the above expression takes the more simple form of z a a2/ X Q.
However, these two formulae apply only to the ideal case that the resistance
of the soldered joints of the thermoelement is equal to zero. Otherwiset the
relation z' - a21k (Q + r /1) holds for the degree of efficiency of the thermo-
0 2
element. Here 3 denotes the resistance of a contact with the surface I cm
and 1 - the length of the branches of the thermoelement. The removal of
transition resistances is one of the most important problems in connection with
the development of the thermoelements. The following condition must thus be
satisfied: r0 < 10-5 ohm.cm for z' - z.

57-9-33/40
AUTHOR: Ayrapetyants, S.V., Yefimova, B.A., Stavitakaya, T.S.,
Stillbans, L.S., Sysoyeva, L.M.
TITLE: On the Mobility of Electrons and Holes in Solid Solutions Ob-
tained on the Basis of PbTe and Bi 2Te 3
(0 podvizhnosti elektronov i dyrok v tverdykh rastvorakh, polu-
chennykh na oanove telluridov evintsa i vismuta)
PERIODICALs Zhurnal Tekhn. Fiz., 1957, Vol. 27, Nr 9t pp. 2167 - 2169 (USSR)
ABSTRACT: On the strength of the facts mentioned here it may be said that
in all investigated cases theelectrons move along the sublattice
of the cathions and the holes move along the anion sublattice.
Expressed in terms of quan-@um mechanics this means that the mo-
dulated amplitude of the wave function of electrons movinz in
the conduction zone attains its maximum values near nodes ocou-
pied by positive ions, while its lowest are attained near the
negatively charged nodes. For holes in a nearly completely fill-
ed zone the opposite is the case. Therefore electron mobility
is considerably reduced by the distortions of the "positive sub-
lattice", and hole mobility is considerably reduced by those
of the "negative sublattice". Furthermore, the conclusion is
Card 112 drawn that, if it is intended to reduce the heat conductivity

57-9-33/40
On the Mobility of Electrons and Holes in Solid Solutions Obtained on the
Basis of PbTe and Bi 2Te3
of a compound destined to be used as material for the positive
thermoelement branch without thereby reducing the mobility of
holes, it is necessary partly to replace the cathions in the
lattice. On the other handq the anions must be replaced in the
material used for the negative branch. There are 4 figures and
8 Slavic references.
ASSOCIATIONt Institute for Semiconductors, Leningrad
(Institut poluprovodnikov, Leningrad)
SUBMITTED: June 24, 1957
AVAILABLEt Library of Congress
Card 2/2

AUTHORS. Gershteyn, E. Z., Stavitskaya, T. S., 6tillbans, L. S. 57-11-8/33
TITLE. Investigation of Thermoelectric Properties of 1,ead Telluride
(Issledovantye termoelektricheakikh evoystv telLuriatogo avintsa)o
PERIODICAL. Zhurnal Tekhn.Fiz., 1957, Vol. 27, 1,1jr 11, pp. 2472-2483 (USSR),
ABSTRACT. Referring to the previous work of the authors in T, 1957, Nr 1,
the investigation of the thermoelectric properties of the lead
telluride was extended to a somewhat greater carrier concentration
region of from 5.1o 17 to 2.1o 2o The influence of the dispersion prom
cess and of the degeration on @he thermo-electromotive force and the
mobility are investigated at the sample in a wide admixtureconceng,
tration interval. In the case of typea which approach a stoich-iometric
structure the cor-@lation between the temperature dependence of the
forbidden zone width and the carrier mobility is investigated. By
introduction of compensating admixtures the influences on the kinetic
degeneration coefficients and on the variation of the dispersion pro-
cess are separated. The investigation of the te6pe@ature dependence
in degenerated and not degenerated types faci4tates to determine
separately the dependence of the length of free path of the electrons
Card 1/f on the temperature and the energy,

PIM I BM EXPWITATICH SM/1503
a4(6) 9(3.4)
Aludenlya Bank WSR. YA@Utut poluprovadni1mv/
P01UPPOMOdmiki v Dauka I takhnlke. t. 2. (Se"coodustors in 3sificas
and TOSks,01097. Vol 2) Moscow. Is4-vo AN 3331. 1958. 658 p.
17.000 copies printed.
0809- U-1 A.F. lartel Tech. Ad.& I.$. Pwv=sr.
PNLP=t ftle sonection of artieles is Intended rot scientists. an-
alseere and technicians.
CCVXRAQZ9 fte 40210ttlon, published by the 3mlaandustor Institute.
Asadawr of 3alanoes. MW. under the supervision or Academician
A.P. Zerf*. eontalne Parts IX and III of a two-volume work an asai-
somduators. Part Ir completes the material an semiconductor devices,
boom In Volume X, and Part III describes various scalconduator &a-
Serials. Lack or space did not ytralt inclusion or such subjects
as crystal counters, thermoelectric generators, atomic batterles.
lamlsophores, semiconductor catalyzers, materials rot complwx aatbod*s
mad Warlaue other applications of sealconductors. lofft points out
br the Aa*rloan scientists V. Johnson and X. Lark-
a
Marovita am samicandu4t' rs ai low temperatures deals with a subject
hardly severed In the 30vl*t literature. 3LKilarly, the article by
the Owl" solentLats 0. Busch and U. Winkler fill& a gap In the
Seftet literature an methods of Investigating semiconductor charac-
teristUs. M@ooo subjects will be dealt with exclusively In a pro-
Pawed tkLzt value*. References appear separately after
?ABLR OF CQM@s
OR. IT. Jm1maks. Tre.A., an& L.S. ffitil-bans. Thermoelectric RSM9-
,___ __ 1 217
entore
gagre explain kne %beery of the thersooloGtris *frost
r-mise *aUse Ube poltimr affeat). In the =I thermoslostr1s, refrigara-1
440
tion ad th 0
IlLfc. Used an'ths-mpplic@a we Gv*10P 6
ratio" sawl &a practice "LOrly by and under L.P. lafte and by
maicausto and engineers of LJTl (Lonlogr&dakly flalko-takhnL-
afteakly Lostitut AX 3M), latsr tas 3amicanduator Institute. AS
gW.. So authors devote three chapters to materials suitable for
%barswelsetrie elements. They describe now developments I%% the
theory of therm"lootrIeLty and explain methods of calculation a"
%be 4oallp of samscoaftator refrigerators. They review various
lypos of rerrigeratore developed as Pr*tQt7P*g by LPTI. including
81"&%wre th,ancestatio units (used mostly for piezoelectric crystal
otablucatles), and owlaooduater refrigerator* developed recently
rot SGIONLICIS research purposes and rot atomic and nuclear research.
lbey illustrate their onlication to,:xV*r1menta1 phyelolofy With
*&&Miss at isprov0d types of these rrLstrators (*Tem*4 and a
md4reeoepo at"s, with therseelactris beating and cooling). There
are 35 retereasee, of abdah 34 A" Soviet and 1 239118h-

STILITWIS, L.
"The .1icatterIng Meohanism nf Carriers on Phonons anJ on IAttice Defects,"
paper submittea Int.l. Co4- of Semi ccndnctr.)r r, Rochester, N. Y. , 18-22 August
195"
Tnst. of :'ef%-Ltc,@mtictors, Leningrad.
A!@@7,1.- 19-3,1071,P43, 2 July 58

ATI'MIR: Stillbans, L. S. 57-2-12/32
lips 3
!,LE. on the Selection of the Cross-Section Relati,)ns in the 2ranc , of emia
conductor Thermocouple Elements (0 vybcre sootnnsheniya secheniy vetvey
poluprovodnikovykh ternot-lementov).
F@RIODICii.L: Zhurrial TeMiniche.,O(ov Fiziki, 1958, 25, pp. 262-26j, (lissa).
A3,S'_-'HACT: In material3 which are at presunt used for tho positive and regative
branch the specific resistance usiially differs 1.),,, the 1,5 - 2-fold amount
and the sileci-fic thermal conductivity by the 11,2-fold amount, whereas
in 1,5.
denote the
x
MO _j(l @ 2-, 11 21 1 2 specific re-
sistances
and the spe-
cific thermal condiictivitie!? of the thermoccuple branches respectively.
From considerations of tne construction, hr_iwov@-r, it is more advantageous
to keep the cross-section.9 of the branches equal. In th-is connection the
problem arises whether the above-mventi.oned for-@ila for "1 0 represents a
Card 1/2 critical value. Simple etalculations given here .5!iow that Small deviations

On Ve Selection of the Cross-Section Relations in t-,e 57-2-12/32
--ranches of Semiconductor Thermocoli-1-9 'Ele-ments.
C
of m from m twithin the domain of 5oo/o) are qai've admIssible. it is
0 1 - -
shown that it is decisively admis,--i-ble fcr the case di:,7cussed here to lay
out equally the crcs,;-,sec@ti@@rs of the ther=7coup3.e---'--,,,ent branches.
There is one Slavic reference.
ASSOCIATION*. Institute Of 3em-1conductors AS JSSR, Le,-.-;nzrad (Tn'stitlit poli;rovodnikov
AA SSSR, Leningrad).
SUBMITTED: October 21, 1957.
AVAIIABLE: Library of Congress.
1. Thermocouples-Mathematical analysia
Card 2/2

AUTHORS: otavitjkaya@ T. S@ Stillb-ans, L. S.
TITLE: On the Influence of Degeneration on--the-Efficiency of Semi-
conductor @her:iocouples (C) vliyanii vyrc-,,hdcniya na effektiv-
nost' poluprovodnil@ovykh termoelementov)
PERIODICAL: Zhurnal '1'ekhnicheskoy F1.ziki, 1958, Vol. 28, Nr 3, P!@-484-466
(USSR)
ABSTIRACTs It was determined iiere to which extent taking irto account
of the degeneration influerces the conclusions of theory
with re,-I-rard to the conditions for ail optimum of the efficien-
cy of thermocouples. '.L'he theoretical relations were compared
with th(: experimental resultj. At first thu theoretical con-
ditions (correlations) are given, that is to say, the formu-
lae for the carrier-concentration n, for the coefficient
of the the."oelectromotive force, for the electric conducti-
vity and the ccnstant A in the Wiedemann-Fraiiz-law as
functions of the reduced value of the chemical Dotential
-* - -!@!- . It i3 shovin that in the caoe of r - 0 'r denotes
Card 114 k'Ll

')'1`-28-3-7/'33
Qn the Influence of Dej,@_-neration on the Efficiez,cy of jemiconductor 'Zhermo-
couples
the exponent in dependence of the free length of path of the
clentron on tht- ez,ex-L;y) t@il:in.,, into account of the de.-
1, eration only introduces inoi,,,rificazit corrections into
-un
the nonditions for the opti,,znatm of of,2C' . In the --aoe
r = 1 arid r - 2, however, 3uch 1-kinC into account funda-
itientally changes the picture. In the case of r - 1 OL2(5' has
no extremum and with the increase in n asymptotica- ly tends
in-
toward a constant value. In the case of r - 2
creases illimitri@:,ly , This is aloe to be seen from formulae
(4b) and(5b) for the case of a hi--h degeneration attu*;@@10.
The theoretical relations Civer, in chapter 1 were experimen.-
tally checked, in a number of samples of electron-lead-
--telMrite with a carrier-concentration of from 5,1017 to
2.10 cm"3. It is shoun that on the one hand the experi-
mental results qualitatively agree with those of theory,
but that on the other hand escential divergences also exist.
1) With a rise of temperature :/,.2Gr' decreases more rapidly
th-@,,r -it would have to according to theoryi 2) the maximum
ox '_ o%-AI.jej of the curves., correspondin.- to the different
carrier-concentia'iur-s- are not equal as this should be,
Card 2 accordjn';, to theory- but with an increase of carrier

57-28-3-7/33
On the Influence of Dedcneration on the Efficiency of Semiconductor Thermo-
couples
-concentration. Both deviations from theory are due to the
fact that in the range of high temperatures 1 (T)(1 - free
len,,.-th of path of the electron) is proportiona? to the
square of the temperature and not to the first power as
Was assumed earlier. It is concluded that in electron-
-dispersions of the heat vibrations of an atom lattic the
co@clusions of the theory with regard to the dependence of
OL (Y on the carrier-concentration and the temperature gene-
rally aeree with the experimental results . 'ilie observed di--
verjences are due to the fact that the present electron-
-theory of solids does not sufficiently exactly render the
,3ependence of the carrier-mobility on its concentration and
on temperature. At present no Possibility exists to compare
the theoretical rules aoverninC the case r - I with experi-
ment, as no substance -was hitherto fuund in which the de-
pendence of the free length of path of the electrons on
their energy is Pxpressed by this law. There are 6 figures,
Card 3/1- and 2 Soviet rt@f(_-.-ences.

57-28-3-.8/13.3
AU'THORSi Stillban3, L. S. , Fedorovich, 11, A.
TITLEt On the Perfornance of CoolinC Thermoelectric Cells on Non-
steady Conditions (0 rabote okhlazhdayushchikh termoelementov
v nestatsionarnom rezhime)
PERIODICALt Zhurnal Tekhnicheskoy Fiziki, 1958, Vol. 28, Nr 3, PP-489-492
(USSR)
ABSTRACT: The performance of a cooling thermoelectric cell on nonsteady
conditions was theoretically and experimentally investigated
here, The equation for the temperature of the cold soldered
junctions (4) is derived. The analysis of this formula (4)
shows that the inertia of the thermoelectric cell is a func-
tion of the square of its linear dimensions, i.e. that the
cooling velocity is inversely proportional to the square of
its length. The cooling velocity increases with the current
rise, The :Lnvesti,,,ations were made in specially produced
samples as viell as in thermoelectric cells of usual construc-
Card 112 tion. It is shown that the inertia also depends on the opera-

On @he Performance of Coolinj- '2hermoelectric Cells on N
L onsteady Conaitions
tion amperage and can many tiLies, be reduced by the use of a
pulsating current with anamplitude which surpasses the value
3,E: 1,
of the optir3un current ateady conditions@ In the case of
a pulsed operation the thermoelectric cell nay for a ahort
ti;!Ie guumintee LL cQolin.,,, which conoiderably surpasses the
maxamum cooling / ""U"Bfea'
k dy conditions. fit. N. Vincgradov help,-
ed with the measurements and the production of the thermo-
electric cel1q. There are 4 fieures, and 2 Soviet references.
ASSOCIATIONs Institut poluprovodnikov AN SSSRLoninCrad
(Leningrad Institute for SemiconductorsAS USSR)
SUBMITTEM October 1, 1957
i. Refr-Igeration syC-',tems---Equ,`.p!T,@nt 2. Ref-rigeratlon systems
...-Perfo-mance Electi-ic cuz,-, ents-Temperatu- actors
f
ce."Is
Card 212

67383
SOV/181-1-9-1/31
AUTHORS: Yefimova, B. A., Stavitskaya, T. S , Stillbane, L. S.,
Sysoyeva, L, U.
TITLEi On the Scottering Mechanism of Carriers in Some Solid
Solutions@' on the Basis of Lead- and Bismuth Tellurid-es
PERIODICkLi Fizika tverdogo tela, 1959, Vol 1, Nr 9, PP 1325 - 1332
(USSR)
ABSTRACTi The present paper supplies a store of experimental material
concerning the relation between mobility of electrons and
holes on the one hand, and the composition of various lead-
tellurium and bismuth-tellurium alloys on the other. The first
part of the paper deals with the dependence of the free-path
time of electrons and holes on the position of the impurity
atoms in the lattice. Following suggestions by A. V. Ioffe
and A: F. Ioffe, the scattering of neutral impurities was
investlgate@i with the aim of increasing the efficiency of
thermocouples. The results obtained by several previous
investigations on this subject are briefly discussed and next,
Card 1/4 the mobility-to-compo8ition curves of the systems Bi 2 Te 3-Sb2Te 31-
tK

67383
On the Scattering Mechanism of Carriers in Some Solid sov/181-1-9-1/31
Solutions on the Basis of Lead- and Bismuth Tellurides
Bi 2Te 3'Bi2s3* and PbTe-PbSe (Figs 1-3) are dealt with, The
abscissa is given by the concentration (in atom%) of tht:
second component, while the ordinate is given by the mobility
of holes (Curve 1) and electrons (Curve 2), In the first case,
the hole mobility rises with concentration, whereas the elec-
tron mobility drops; in the second case, the hole mobility
drops, while the electron mobility remains about constanti
In,the third case, finally, the two mobility curves have a
flat minimum at about 50;_V@ PbSe. This is indicative of the
fact that electrons move toward the cation sublattice, and
the holes toward the anion sublattice, The relation between
mobility and composition in the systems Bi2Te 3_Bi2Se 3 (Fig 4)
and PbTe,-SnTe (Fig 5) is more complicated. In the first case
both curves have a minimum, in the second case the hole
mobility has a minimum with low SnTe-concentration and there-
upon rises steeply, while the electron mobility drops monot@)n-
ously, The electron mobility in bismuth telluride is about
four times less than in bismuth selenide, and the hole mobil-
Card 2/4

67383
On the Scattering Mechanism of Carriers in Some 5olia BOV/181-1-9-1/31
Solutions on the Basis of Lead- and Bismuth Tellurides
Card 3/4
ity in Bi 2Te3 is by the 1-5 fold less than in Bi 2Be 3' Condit-
ions in PbTe-SnTe (Fig 5) are even more complicated. The hole
mobility rises after a minimum, while the electron mobility
drops after a maximum. In a similar manner, the second part
of the paper investigates the dependence of the free-path time
on the carrier energy. A number of diagrams are shown and dis-
cussed. Thus, figure 7 shows the temperature dependence of
mobility for pure PbTe and for PbTe + 5@6 PbSe with equal
carrier concentration (n - 4.1019); figure 8 shows the temper-
ature dependence ofl) n.i. (the collision frequency
N@. ), ti, + 0i+@) n.i. ;1indenoting the frequencies of collisions
with thermal vibrations, ions and neutral impurities).Figure 9
shows the temperature dependence of-mobility u in pure PbTe and
r
PbTe + %'b PbSe, figure 10 -n.i. /T - f(lgF), figure 11 u(n),
figure 12 7 as a function of -F ('r-"q_O.8 ). Figures 13-19 show
the results of similar investigations for the systems
PbTe-SnTe and Bi 2Te 3-Bi2Be 3* In all these cases, the free-path,,..
r

67383
On the Scattering Mechanism of Carriers in Some Solid SOV/181-1-9-1/31
Solutions on the Basis of Lead- and Bismuth Tellurides
ASSOCIATI01i.,
SUBMITTEDi
time is by way of approximation inversely proportional to
temperature, which in in contradiction with the theory, It iE
explained by the fact that triple collisions (electron -
impurity atom - phonon) may occur in a lattice containing
impurities. Theoretical inyestigations were conducted by
T@ A. Kontarova. There are 19 figures and 4 Soviet references.
Institut poluprovodnikov AN SSSR Leningrad (Institute of
Semiconductors of the AS US.'-'-'i, Leningrad)
may 19, 1959
Card 4/4

C 67364
solf/Ist-1-9-2 '
---- -- .1 ions. T. A. in'
5,11b .. 0 a - Ck
-
sit
key.,
TITIA4 log. tjCtl.. of the Scattering Mach-41- of Carrier. I- SO--
:
tel.
S-I:
FLUIODICALe flalka, tverd*4* lots. 1959, Vol 1. Fr 9. Vp i (U531)

423TRACT, Th. b... lson.ild - or. candeet-4 ..I
*T
W loot
bia'sith. and, lead at the f.11-188, 1) .1th -e . ......
J
@
.'.1 lattice,, the depend.
thersoal vibrations of the o
114 o -
-
7
.the ties % required for tb tri`eillt4ef the free
:f

@
C
petbl.wtb as the intensity sea
!h

. ."..
,
c she. fit . 2 1 t
I. .:
.
.0 rar of treat :
I
o
th. to a d impurity tows now find. the dependent. of I
:
.:
on
%b.
%.r9Y Of
station 1h- .1 and also C
t Purl"
or
'
-
t

h
,
. -is* Pieter. or these - --I'I
;b
lit:t
h: " Ca. A -l
1:
t 0
:
In
a
this. be Ca the basis of the quietitative, rati
..r. astaly co.6-tod an poly-
raised. Th. In ... tigstiom
try tellim'. -aevloo prodI Th. depend-
:Y P-

"

c
0
If the
h
,
' and *::
ef
qzim

Card 1/4 h
r
1 -l . t
: in
:; t
lot I I rwa at
s
:.

.n on-oz. however, can be separated fr.. on, an
:th
d
!,
:,
.r
,
I
zb
ather thlogs. f
Ason&
v.
ro:riatv invest1gati
;:
/
Id 2holds thr asho't t be
-
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.
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ur
hot- far lead t.
ty of . Simple
tooperst." goods I .... tigt.d for the ablit
.1th the c.--tration of 5.7.1017. 1. the .... or concert-
'a
T-5/2 bold. to the revo.
-1019 .
(-
d 1
,
10
an
.5
its- of Z..
traptrat.r... had 1. the c... of low twsp-tur..
of bigh
/

y
l
1-5 2 hold. . Th. l,tl
,
r
1
pl
a
:r -tlm
::
:.
:
.
at low temper
t .4
.r with Incr-oling concentration Of the
ecoa- st-
g
:.:" re list 1, to ,,, the
,
"21.1 arm . Th we-phofton pr
:
:
.. Th. waprur.
::
"ibelpal part at higher to r tur
,epand.... of the mobt lity of do, ... rated ad -O._4 g.n.r.t.4
I., I I the factor To. 1. this connection
'
b
-
M
P
Ihrroopond. to the
l 'a
bo
/2
:r!,:
,
I _n
%b let!!--. h d r
%olbo seenwitic branch of
'
the
the lbor,soolectremotive f r t ;-turv ad a th.4,-
,
card 2/4
of tb* carrier. sr. in satisfactory sgr~o&sbt
-111 the th"ri. Also to the came of a.typ.s 112?,3 ad 1'23*)
1b *"-* 1h
rzo
i-ltromo lt,
d*P
f
roe on the eon
..:t
r
re,to. the a.",. 0 1in go :
;
:
;o
0
6

ry- rbi:
sls* holds for the t..,
2
1-
=
11ity In 31,T. 3with lei thermos I at ro"t 1.9 for*.. ..4
Ith law The of sobillty
st..P- with weekly degenerated sewpl.. Of Me and DL2 To
"An to the case Of the strongly 4odemerst
the contrary, b..0-r. hold. for bi ... th . I
authors Investigate the .4%tt*rlvg of electron* an
-A Impurity for the alloy 00,; It I., . 2C@@ It's.
2 3

o
0
C
f 'yp:. .5 (donor) and Pb (acgo;tcr) sort
th:
-
d
;1ti -.
Mobility drops appreciably with le-
1
creasing n=b- of ions. In bismuth t-11-2d.. .111o
1.6 on the I.- of the impurity, the time required by the
lent- for tr ... ties throgo the fr.. p.thl.ntfth do.. net
card 3/4 depend an energy. Avou It a 0ttslOvd 2m the tav4stigatkon under

ration agree .1th Lr41r'0.1-6 theory (&of 5). For 312T*i
12 h. Ids. Biro us denote. the theorati-I
St.,'

-
.,
.. of me . for 11Z, -her. . d-%.. th
depend
.
:.:
.:
of' .1trons (and I... ) end St to the trenewarool cr . ,ti-
or the Ion. A similar relation also holda for the d,peddenco
of the notion an ts@mpRrwtarr. Thert are 19 figures and
6 refer ...... 4 of which or. S-i.t.
ASSOCIATION, 1-tit.t p.l.pro..dnik- 411 SSSR L-I.g-d (1-tlt@t. or
L.ninjr.d)
f., , key 19. 1@5@

r)
AUTHORS;
TITLE;
82533
S/181/60/002/007/008/042
Boo6/BO70
Vinogradova, M. N., Golikova, 0. A., Mitrenin. B. P.,
Stillbans, L. S._
,I
The Mechanism of Carrier Scattering in p-Type Germaniuml
PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 7, pp. 1428-1430
TEXT: It has been shown many times already that the temperature
dependence of the hole mobility of germanium in the range 100 - 3000K
corresponds to the law u--T-2.3, and this contradicts the theory of
carrier scattering on acoustic vibrations. It was proposed to take into
account also the optical vibrations to overcome this difficulty. If this
is done, the mobility falls rapidly for T 9 can be
made. To be able to determine u directly from conductivity and Hall
constant R, the range of impurity conductivity on the side of high
temperatures must be increased. This increase takes place in more
Card 1

82533
The Mechanism of Carrier Scattering in S/181/60/002/007/008/042
p-Type Germanium B006/BO70
strongly doped samples. The authors used gallium-doped germanium with a
hole concentration of 2.6-1015 to 8.1016. R was measured at 17,00"0 oe,
111PI I uhPh -
where Ito = PI+Ph - u. The index 1 refers to light and h to heavy
holes. If it is assumed that the temperature dependence of the mobility
of holes of both kinds is the same,. ii - f(t) gives a correct
description of the temperature dependence of the mobility of heavy
holes. Fig. 1 shows u(T) on a logarithmic scale for five samples of
germanium with different hole concentrations (curves 2-6). Curve 1 gives
the straight line corresponding to the T-2*3 law. When the carrier
concentration is increased, the slope of the curve approaches that of
the straight line. Further investigations showed that the carriers of
all samples are in a non-degenerate state at all temperatures. Lower
values of the mobility in samples with high hole concentrations should,
therefore, be explained as being due to the effect of a scattering from
negatively charged acceptor ions whose number N is equal to the number of
holes p. If it is assumed that the total number of collisions per second
Card 21A

825 33
The Mechanism of Carrier Scattering in S/181/60/002/007/008/042
p-Type Germanium B006/BO70
4 z@ 1/T, (V - relaxation time, u = E'V ) is the sum of collisions-with
m
thermal vibrations (-Vtl,) and ions (-01 a comparison of two samples with
different hole concentrations may give -@i, mobilities uth and ui, where
9i = aN (a=sv, s being the mean ionic cross section, and v the mean hole
velocity) and 1 = 21 aN. Figs, 2 and 3 show the results of the
11i e
calculations. Fig. 2 shows f(lgT) for five samples, Fig. 3 shows
u q1
for different pairs of samples. If formula (1). 1/uth=l/u - Vul
u
holds for the mobilities, the T-2*3 law is obeyed for all samples.
Summarizingly, it may be said that between 100 - 4500K Vi is independent
of temperature ( *up to an accuracy of 10%), which diverges completely
from the old theory. The mean free path of the carriers (l =.rv) is,
therefore, proportional to v and not to v4. as was assumed earlier.
Taking into account the scattering of holes by thermal lattice vibrations,
the T-213 law is well obeyed in the range of temperatures considered.
Card 3 @@ "/'@ "-@-
/A "a C--V@

S/1E)1/60/002@909/008/036
f"r-? 00 (/,g 3-51- //j 8-" /" V 3) B004/BO56
AUTHORS: Stavitskaya,_T. S., -Stillbans, L. S.
TITLE: The Scattering of Elec@;@ @y Ions in Lead
Telluride
PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 9, pp. 2082-2084
TEXT: The present paper aimed at solving the problem as to whether in
t_LbTe the relaxation time 7 i of the carriers is independent of their energy.
Fig. I represents the measured mobility u of the carriers as a function of
their concentration, and the theoretical curve for the case in which scat -
tering on impurity ions occurs. Fig. 2 shows mobility as a function of
temperature for PbTe samples with electron concentrations of
9 20 -3
1.5-101 9, 51101 , and 1.6-10 cm . On the assumption that*the total
number of collisions (V - 1/T) results from the addition of collisions
with impurity ions (Yi IlVi) plus the collisions on the rmal lattice
vibrations (9 t = 1/-ot), i' was calculated from Fig. 1,'U .(T)'vas corrected,
Card 1/2

84067
The Scattering of Electrons on Impurity Ions S/181/60/002/009/008/036
in Lead Telluride B004/BO56
and the temperature dependence u 0(T) in scattering on thermal vibrations
was obtained. The results obtained by this calculation are represented
in Figs. 3, 4. It follows from Fig. 3 that the number of collisions on
ions is proportional to the number of ions: 1/11 1 = an. The coefficient a
depends neither on the concentration nor on the energy of the carriers.
As the relaxation time of the carriers in the case of scattering on im-
purity ions is thus (like in bismuth telluride) independent of their
1/u (T) - 1/u(T) - an (1) is written down, and from the data of
energ-f9 0 %
Fig. 2 conversion according to equation (1) is carried out. The curves
represented in Fig. 4 no longer show the break to be seen in Fig. 2. Thus,
the latter had been caused by the scattering of the carriers on impurity
ions. There are 4 figures and 3 references: 2 Soviet and 1 British.
ASSOCIATION: Institut poluprovodnikov AN SSSR, Leningrad
(Institute of Semiconductors of the AS USSR, Leningrad)
SUBMITTED: March 5, 1960
Card 2/2

REGEL', A.R. ;.-@TILIBAIS. L.S.
Abram Fedorovich loffe. Fiz. tvar. tela 2 no.11:26?1-2676 N 160o
(KIRA 13:12 )
1. Inatitut poluprovodnikov AN SSSR. Leningrad.
(loffe, Abram 7edorovich. 1880-)

86438
3/'.81/60/002/011/025/042
B006/BO56
AUTHORS: loffe, A. F., Moyzhes, B. Ya., and +411h--L. S.
wMeAn
TITLE: Thermocouples as Power Sources
PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 11, pp. 2834-2857
TEXT: The present very voluminous paper deals with a principally theoreti-
cal investigation of the possibilities of using thermoelectric phenomena
for generating energy. In principle, there are four possibilities to do so,
which base upon the use of four devices: 1) Thermoelectric generators;
2) Cooling plants (refrigeration pumps; 3) Heating plants (heat pumps);
and 4)Thermostats and air-conditioning apparatus. All these devices are
characterized economically by Z, which has the dimension degree-1, and
is a function of the material parameters of the components of the thermo-
2/ ( _@X, _@x-,
couple: Z = (al+ad JQJ + 2Q2 )2, where a is the thermo-emf,
Q the resistivity, and x the thermal conductivity of the two components.
Further, these devices are characterized by the efficiency
Card 1/4

86438
Thermocouples as Power Sources S/181/60/002/011/025/042
B006/BO56
2T I V_1_+_IF - 1 (generators) and the cooling coefficient FS of
2 -fl-+--F+ T 1 /T2 T
thermoelectric cooling plants: F_ = - 1 'Ifl-T457 - T2L, ZT
_@2_Tl V 717P + 1 M
TM = (T1+T2)/2. The materials available today have a $ of 1 within the
temperature range between room temperature and 12000K. Thus, it is possible,
in principle, to produce thermoelectric generators with an efficiency of
about 15%, as well as cooling devices with a maximum cooling of 800 (i.e.,
at a temperature difference of 400, Ec! 50o). Further, the material proper-
ties determining Z are discussed, and the necessity of looking for materi-
als having minimum thermal conductivity of the lattice with maximal mobili-
ty, and of increasing u stressed. Of such materials, the op-
/'lattice 212nmk )3/2-er
timum carrier concentration is given as n0 - h3 . lurther,
problems relating to the usefulness and efficiency of materials with
Card 2/4

86438
Thermocouples as Power Sources S/'181/60/002/011/025//042
B006/BO56
complicated band structures, and later problems of carrier concentration
are discussed. In the following sections, the authors discuss the carrier
mobility and their affection by scattering from defects and thermal lat-
tice vibrations; in detail, the scattering by thermal vibrationa, impurity
ions, and impurities introduced by substitution into chemical compounds
(above all, tellurides and selenides), are discussed. In the following
sections, the authors discuss problems of heat conduction, the dependence
of Z on the degree of carrier degeneracy and on temperature, and describe
the operation of thermocouples under nonsteady conditions. Further,
possibilities are discussed of increasing the efficiency of them ocouples
(thermal conductivity, mobility, and thermo-em@. Liquid and gaseous
semiconductors are discussed, and the optimum determination of the geo-
metrical dimensions and the correspondence of the individual parts of the
branches of them ocouples. In the last part of the paper, thermocouples
with thermionic emission are discussed (vacuum thermocouple without and
with compensation of the electronic space charge; plasma thermocouple;
and combination of solid and vacuum thermocouples). The paper gives a sur-
vey of the present stage of the theory of thermocouples, and discusses
possibilities of improving it. The material discussed has been taken mainly
Card 3/4

86438
Thermocouples as Power Sources S/161/60/002/011/025/042
BOr)6/BO56
from published papers. I. A. Smirnov, A. I. Ansellm, A. R. Regell, and
A. A. Averkiyev are mentioned. There are 3 figures and 31 references:
19 Soviet, 5 German, 5 US, 1 Canadian, and 1 British.
AS30CIATION: Institut poluprovodnikov AN SS3R Leningrad
(Institute of Semiconductors of the AS USSR, Leningrad)
SUBMITTED: July 11, 1960
Card 414

Ici iiss) "Irivest-1,7,--ticn irto, --r.-I several aprli-
cptio.,is of -uctor trien., oele-ents., @.Osco,,-J, IP61. 28 pp;
of .---@ciepces US.-@,R, PhI.Isics Inst ireld F. IN. Lebedev);
200 cories; free; list of' aut@or'.,; on pp P-6-28 (4G eri,,ries);
( K.L--. ,5 - 6, 1 s u r ,171)

29695
S/151/61/003/010/022/0@6
N, 7 70 0 gt/, B!04/BI06
AUTHORS: Golikova, 0. A., Moyzhes, B. Ya., and Stillbans, L. S.
Z_-
TITLE: Hole mobility in germanium as a function of concentration
and temperature
PERIODICAL: Pizika tverdoGo telaj v. 3, no. '0, @96!, 3105 - 3114
TEXT; The hole mobility in p-type germanium with an acceptor concentra-
tion of 4ig;10,3 ; 4-10 20 cm-3 was investigated in the temperature range
of from 7 0 450 K. The carrier concentraticn was determined by
measuring the Hall effect in magnetic fields of 50 - 38,000 oe in the
above range of temperatures. Specimen6 were produced by zone melting
during which the germanium was alloyed with gallium. Mobilities of
different specimens as functions of temperature are given in Figs. I and2.
The carrier concentrations of the different a-pecimens ranged from 4.9-10 13
16 -3 0 17 20
to 6.4-10 cm at 77 K (Fig. 1), and frort '.2-,*,0' to 4.2-10 cm-3 at
3000K (Fig. 2). The measurement results were checked with specimens
Card 1

29695 S/18 61/003/010/022/036
Hole mobility in germanium*.. B104/B108
having concentrations of 1015 _ 0 16 cm-3, oroduced at the Institut
metallurgii AN SSSR (Institute of Metallurgy, AS USSR) by Chokhrallskiy's
method. Results are given in Fig. 3. In a detailed discussion of the
results the authors show that in the range of carrier concentrations from
10 15 to 3-10 19 cm-3 the experimental data on the carrier mobility in
p-type germanium in the temperature range from 77 to 4500K can be ex-
plained qualitatively and quantitatively by theories of carrier scattering
from ionized impurities. The mobility is one-hundredth of that of pure
materials. The ratio u theor/u exp (u - mobility) is equal to unity up to
concentrations of 10 17 cm 3, has a maximum of nearly 2 at 10 18 cm-39
decreases to 1.6 and, at a concentration of 5-10 !9 cm-3 starts rising
again. The authors thank M. I. Vinogradov for help, and V. S. Zemskov
(Institute of' Metallurgy, AS USSR) for supplying the control specimens.
There are 6 figures and 17 references: .3 Soviet and 14 non-Soviet. The
four most recent references to English-language publications read as
follows: E. G. S. Page. Phys. Chem. Sol,, 16, 207, 1960; T. P. McLean,
E. G. S. Page. Phys. Chem. Sol., 1@, 220, 196o; F. A. Trumbore,
A. A. Tartaglia. J. Appl. Phys., Z2, @511, '958; A. C. Beer,
Card 2 //@ -31

29695
S/!81/61/003/OiO/022/036
Hole mobility in germanium ... B104/BIO6
R. X. Willardson. Phys. Rev., 110, 1286; 1958.
ASSOCIATION: Institut poluprovodnikov AN SSSR Leningrad (Institute of
Semiconductors AS USSR, Leningrad)
SUBMITTED: May 27, 1961
Fig. 1. Hall mobility as a function of temperature. Legend; The figures
by the curves indicate the number of specimen. On top-specimens with
lower carrier concentration.
Fig. 2. Hall mobility as a function of temperature. Legends see Fig. 1.
Fig. 3. Hall mobility as a function of carrier concentration at room
temperature. Legend: (1) specimen examined in the present paper;
(2) specimens supplied by the Institute of 1,1etallurgy, AS USSR; (3) data
taken from the paper of F. A. Trumbore et al.; (4) data taken from the
paper of W. C. Dunlap, Phys@ Rev., _U,, 286, 1950.
Card 30

7 6 0 0 V.31 1177, 14 Y)
AUTHORS: Colikova, 0. A., and Stillbans;
TITLE: Investigation of the dependence
the magnetic field and the temperature
PERIODICAL: Fizika tverdogo tela, v. 3, no.
29696
S/181/61/003/010/023/336
B125/B102
L. S.
of the Hall coefficient on
in p-type germanium
10, 19-61, 3115-3122
TEXT: The authors study the function R(H) (R -Hall coefficient) for
carrier concentrations of n-J10 13 to 10 16 cm- 5 at magnetic field strengths
of 50 to 38,000 oe, and at temperatures of 77-2900K. The experimental
results are compared with theory (A. C, Beer, R. K. Williardson. Phys.
Rev., 110, No. 6, 1286,19-53). The experimental results obtained for
samples with n,-.#1013
theory. Agreement is
values. According to
Rev., 98, no. 2, 398,
'rhof light and heavy
to 1014 are in semiquantitative agreement with
found at mobilities lower than the theoretical
G. Dresselhaus, A. F. Kip, and C. Kittel (Phys. Ix
1955) (Determination of the relaxation times T, and
holes, respectively, from the width of the
Card 1/3

696
S/181 17003101010231036
Investigation of the dependence of ... B125/B102
resonance curve at 40K), the following relation is valid: 7 l/Th' 1.4 and
not -r 1/'Th -" The results concerning galvanomagnetic effects were in
conformity with theory at b -mh/'l -8 (m h and mi are the effective masses
of heavy and light holes, respectively). V -nl/n h -0.04 was put instead
of V- 0.04. (ni and nh are the concentrations of light and heavy holes,
respectively). According to G. Ye. Pikus (ZhETF, XXVII, no. 7 ' ' 957)y
taking account of the angular dependence may lead to a difference between
TI and rh I hence, the value b -8 used for the calculations appears to be
doubtful. The values of b obtained for various scattering mechanisms
(consideration of a possible influence of optical vibrations and of
hole-hole scattering) should be taken into account in a more exact theory.
M. N. Vinogradov is thanked for aid in measurements, S. S. Shalyt for
arranging measurements of the Hall effect in strong magnetic fields,
1. 1. Farbsteyn for advice, as well as G, L. Bir, B. Ya. Moyzhes, and
G. Ye. Pikus for discussions. There are 6 figures, 2 tables, and
12 references: 4 Soviet and 8 non-Soviet@ The three most recent
Card 2/3

29696
s/lai/61/003/010/023/036
Investigation of the dependence of... B125/Bi&
references to English-language publications read as follows:
R. K. Willardson, T. C. Harman, A. C. Beer, Phys, Rev., L6, 1512, 1954;
H. Brooks. Advances in Electronics, 7, 156, 1955; F. J. Morin, Phys.
Rev., 93, no. 1, 62, 1954.
ASSOCIATION:
SUBMITTED:
Institut poluprovodnikov AN SSSR Leningrad (Institute of
Semiconductors AS USSR, Leningrad)
May 27, 1961
@Y'
Card 3/3

@,@)UU4/00 1 /024/05
B I OF, 'B 104
(/0 12, 2.
A','T11ORS': Yefimova, B@ A., Kellmar, Ye. V., and Stillbans. L. S,
TITLE: Mechanism of scattering from impurity ions in Bi 2Te3
PERIODICAL: Fizika tverdogo tela, v. 4, no.. 1, 1/062, 152 - 156
T@-,'XT: The temperature dependences of the electron and hole mobilities of
Polycrystalline Bi 2Te3 (n- and p-type) were measured at 80 - 6000K. The
different carrier concentrations at which the measurements were made were
attained by adding Pb (p-type) and/or CuBr (-i-type). In evaluating the
mobility data it was assumed that the mobility related to scattering from
impurity ions is independent of temperature and of the mean carrier energy.
Moreover, it was assumed that 1/Uexp = 1/U therm *I/U ion' where utherm is
the mobility with scattering from thermal lattice vibrations, u ion is the
mobility with scattering from impurities, The effect of scattering from
impurities on the thermo-emf is less than 10 - 12@. It was therefore
possiblP to calculate the levels of the chemical potential from the thermc-
(@ a rd 1 /0

S/781 a 2PC3OPt1OO 1 /024/052
M e,@ ha B - 38/B 104
nirm, of scattering from...
emf The electron and hole mobilities in the case Q scatterinq fror, rhe
-1 . t ' 12 -
ti@ 'e, 7,; i 1 1 to and T- respe
- I@ittice vibraions are proportiona I-
t"vely. `-,xperiments ;,s well as calculations were proof of -he correctness
of -I.- law I - VT (I - carrier free path) (M. 0 Vinogradova et a... FTT.
Iii, 19rq), This law accounts for screening of the charge of the
impurlty Lono owing to high dielpetric constant and high carrier concon-
*ra-,Icn The experimental and calculated cross sections S of scattering
C; 2
from =purity ions agree well with each other (S o- Cm
1 9 n exp
'0 -M corresponding to an "ion radius" of about 3 A- There
th
are 4 figures. I table, and 7 references: 2 Soviet and 5 non-Soviet- Thr--
four most recent references to English-language pullici,tions read as
follow3@ F. Brooks. C Ferring- Phys. Rev_ fl, 579, 19151; K Hashimotc.
"em. - Science. Kyn-,;yn University, ser. B, 2. 5. *,6`5. T
11 Fa 1 1958 G.
,
Austin Proc 11 hy Soc 7 2. 54 5. 19 56; N - S c 1 a r Phys Rev 04 . I S
ASS07IATION: Institut poluprovodnikov All SSSR L,@ningrad lnsta-@ute i@f
Semicond,i,;tors AS USSM, Leninrrad,'
J

BOGUSLAVSKIY, L.I.; STILIBARS, L.S.
-Z7
Conductance of films of a polymeric complex of 'tetracymoethylene
with metals. Dokl. Ali SWR 147 no. 5:1114-1117 D 162,
(KMA 16:2)
1. Institut elektrokhimii AIR SSSR i Instibit polyprovodnikor
AN SSSR. Predstavleno akademikom A.N. Frumkinym.
(Organometallie compounds-Electric properties)
(Ethylene compounds)

STILI;iANS, L.S., doktor fiz.-mat. muk; ROZENISHTEY14, L.D., kand.
fiz.-wit. nauk; AYRAFF.TYAIITS, A.V., kand. fiz.-mat. nauk;
KARGIN, V.A., akademik; YJMITSELI, B.A., doktor khim.
nauk; TOFCIIIYEV, AN., akademik (deceased]; DAVYDOV, D.E.,
kandid.khir . nauk; GEVSEII, L.V., red.; MIYE=R0V, K.G.,
1*ed.; GOLUB', S.P., tekhn. red.
(Organic semiconductors] Organicheskie poluprovodniki. Mo-
skva, Izd-vo All SSSR, 1963. 317 p. (MIRA 16:12)
1. Akademiya nauk SSSR. Institut neftvkJ,,imicheekogo sinteza.
(Semiconductors)

L 10,3-70=65- EWT(l )/EPA (a)-2/EWG(k)/EWT m)/E-PF(c)/'EWP(J)/T Pc-4/Pr-4/Pt-_1Q/
Pz,-,6 1JP(c)/ASD(a)-5/AFWL/AFET1i/ W)/ESD(t)/RAEM(t-) AT!41
ACCESSION NR% AP4047206 8/0190/64/006/010/1802/1805
AUTHORt Boguslavskiy, L. 1,; Stiltbauss Le S#
TITLEs Study-of the conductivity of polymer films at high frequencioi-
SOURCEi Vy*sokozolskulyarny*ya soyedinenLys, v. 6# no, 109 19640
1802-,1805
TOPIC TAGSt organic semiconductor, semiconducting polymer, polytetrs-6
cyanoothylena, poly(silver tetracyanoethylons), frequency, electricall
property
ABSTRACT: A studi,'has been mad 0f 1 trical conduction in the
-iex
P_Q1XMA_r_tccq_T lex of tetracy4nc th I= with 911vers and in metal-free
M_ 5
po 1 y to t r a cyan oo tqhl e no. Thin film (6#@ x 10-' and 5 x 10- cm., re-
spectively) specithens were prepared at 300 and 500C by a technique
described in the original article. Heasurements of a-c conductivity
were performed at frequencies in the range 0*5-200 mcps# Heasure-
ments of the-temperature dependence of resistivity were conducted with,
i
d-c current-at 20-300C, It was ound that the resistivity and ac-
tivation energy for conduction ojthe complex decrease with rising
[Card 1/2

L 10378-65
'ACCESSION HRt AP4047206
frequency. Resistance vs frequency curvesp which show a frequency-
independent section, were analyzedo and activaeion energies for con-
duction determined far,d-c and high-frequency a--c currents were com-
pared. It was concluded that d-c measurements alone cannot give a
complete picture of the conduction mechanism, Apparently this mech-
anLsm is the sum total of the contributions of two machanismat 1)
carrier transfer from one contLnuous-conjugatia,u region to another
and 2) conduction within'the confines of these regions proper, which'
is characterized for @he complex and the metal-free material by an
activation energy close to zero. Therefore* in the study of canduc-,
tion processea in organic polywarebarriers between macromolecules
must be taken into account*. Origo art*, host 2 figureog and I for-
mula,
ASSOCIATIONs InstituioilektrokhimLt AN SSSR (Inititute of Electro-
chemistry, AN SSSR)
SUBMITTEDt 04Dec63
SUB CODEt @,OC, EM
!Card 2/2
ATD PRESSt -3116 ENCLs 00
NO REP SOVt 003 OTHERt 003

STILIJAHOV, Ddriltrij, J,:--. GS.-Y.
Meeting of C@:=--J-sslon 1@? &ffiliat-A with the Inte-:-natic-nal.
Council for LLil-iing Resear3h . Studies, and Doc=entat-Ion in
Stockhobn, Mar,,-h 1963. Poz stav-by 12 no.Z996-r-,S t64

Lit V;