SCIENTIFIC ABSTRACT SIROTA, N.N. - SIROTA, N.N.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001550820018-1
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 24, 2000
• Sequence Number: 18
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

S/020/62/142/006/009/019
Distribution of the electron... B100108
co
4,te2A
7L~-!~~e-"r'dr=-23,6.10-1
6HIC3 aa (9),
-.,iith ,. and a being determined by experiment from the intensities of the
X-rays scattered from the crystal planes (h 1k111) and (h2k212). ~'2
depends considerably on the lattice type, and from X-ray diffraction studies
is estimated as being proportional to r4Q2
X- YJ rl P21Ar Z' F:, exp [- 2aOfl 6r. (14).
W 6=2 /-J
I I
F2 is obtained from the difference of the structural amplitude determined
by experiment and that computed on the basis of a known electron distribu-
tion. The deviations ere explained by the fact that the diamagnetic
component of the susceptibility has been neglected in the calculations.
It is demonstrated that the anisotropy of the diamagnetic component of
susceptibility caused by the deviation of the electron distribution from
Card 2/3

S/020/62/jA2/0G6/O-,DP/01q
Distribution of the electron B104/B106
spherical symmetr,,, as vrell as by the temperature dependence of the
diamat.-netic susceptibility can be estimated from X-rlay diffraction
studies. There are 1 table and 5 references: 3 Soviet and 2 non-Soviet.
AS.-7OCI2",'IGN: Otdel fiziki luvordogo tela i politDrovodnikov Akadeiziii nauk
B'.i!3R (Division of 6olid State Physics and Semiconductors of
the Academy of Sciences BSSR)
SUB',.~IV~I'Z.D. October 11, 1961
Card 3/3

35671
S/020/62/143/001/026/030
B101/B.147
AUTHORS: ~N. N~_ Academician AS BSSR,
and Gololobov, Yo. .11.
TITLE. Electron density distribution in indium antimonide
P-E-RIODICAL: Akademiya nauk SSSR. Doklady, v. 143, no. 1, 1962,
156 - 158
TEXT: The authors studied the change of the atomic scattering factor of
indium and antimony ions in InSb single crystals purified by zone melting
'i
and then pulverized (particle size 5~1) with aY,;"""--' - 50 - M (URS - 50 - 1)
x -ray recording unit. The absolute intensity I hk1 of the reflexes was
determined from experimental data, and the structural factors f,(Sb) and
3
f (in) were calculated. The logarithms of f at h'~>8 and f
2 il 2
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S/020/62/143/001/026/030
Electron density distribution ... B101/B-147
3
2
at il-1,11 form a straight line. The straight sections are characterized
by f 44-46, tan 0.02; f (0) - 39.65, tan 0.019. The
Sb(O) Sb~ = In In
electron density distribution follows the Gauss function A exp (-kr2
51 ~ 1
with A3b ~ 323.084; AIn = 317-4I4;,CSb ' 11.780;,,4In ' 12.396. Increased
eleciron density between In and Sb ions was observed in the (110) plain:
between 000 and 1/4 1/4 1/4,and betwenn 1/4 1/4 1/4 and 111 along [III:'
and also between 1/4 1/4 1/4 and 001 along 113--'. In the plane with the
electron density 0.5 el/R3, the ionic radius of Sb is 1.00 R, that of In
is 1.05 In the 0.25 el/23 plane, the ionic radii of both Sb and In
are 1.40 There are 4 figures and 5 references: 4 Soviet and
Card 2/3

S/02 62/143/001/026/030
Electron density distribution ... BlOlYBI47
1 non -Soviet. The reference to the English-language publication reads as
follows: G. Giesecke, H. Pfister, Acta Cryst., 11, no. 5 (1958).
ASSOCUTION: Otdel fizilci tverdogo tela i poluprovodnikov Akademii nauk
BSSR (Department of Solid State and Semiconductor Physics of
the Academy of Sciences BSSR)
SUB~-ITTED; October 21f 1961
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S/020/62/143/002/017/022
B145/B136
ViO~.';: ;irota, N. 1;.,T,,1ember of the AS BSSR,
iTn _dO i ekhnovi ch, V. K.
Xlr.,ctron density distribution in aluminum arsenide at
20 and -'10()()C
7 ~ T' J
C'1~: "kademiya nauk S33R. Doklady, v. 143, no. 2, 1962, 370 - 372
III V
In a study of compounds A B , the atomic scattering factors of
z . ind arsenide ion,--; in aluminum arsenide were determined. The
aluminum
measurei:ient and calculc-tion methods had been described earlier (DA11, 1369
no. 3, 660 (1061)). The samples ~--ere obtained from the initial components
usirl,n- the two-temperature method ~evacuated quartz ~Lmpoules, 650 and 115000Y
duration of synthesis 5 hrs). The arsenide crystals were comminuted in
ar,3on atmoophere to a particle size below 15 - 20a. The diagrams were
plorted using, a 50 , (URS - 50 1) instrument with a Geiger counter
0 jet was applied for
-rid Cu 1. .. radiation in ar'- n atmosphere. A cold N 2
low-temperature measurements. Results show that the curves in the
Card 113

S/020/62/143/002/017/022
'E'loctron density distriWtion ... B145/BI3&
2 3 2
h. di--ram approach a linear course as from '57
In f h. > 12.
Th,1 (lensity distribution for this part of electrqns can therefore be
descr-1 bed 10'y the Gaussian curve '. 1= A exp The resulting data,
characterized b7 (See Table 1), show thaty with a temperature dropj~-
ch.anL7es in such a way that the height of the Gaussian curve grows near the
atoi7.ic center, whereas the dispersion of the curve itself becomes less.
The distribution in the outer part of the ions is characterized by ~' 29
which is determined by the difference f = f - f (f being the experimental
2 1
value of atomic scattering factors and f 1 the value calculated from the
Gaussian di3tribution). On a temperature dropp f 2 grows both with Al and
with :
~s. In other words, the electron density distribution changes in the
outer part of the ions. The analysis of electron density distribution
Card 2/4

S102 62/143/002/017/022
E-lectron t~ensity distribution ... B145~B138
dia-rams shows th.1t, with a temperature drop, the electron density between
II.-I.djoinin.1- aluminum and arsenide ions risen somewhat in the F1 11-' direction,
\'l 10) plane I
..rhere7~ ir, the the zone of low e'eotron density expanils
Consider-,bly in the 110 direction. It is concluded that the electron
density distribution has to be systematically investigated at different,
nd
especially at low, temperatures. Ye. Mi. Gololobov and A. U. Sheleg
helped in workin,-,- out the methods of low-temperature measurements. There
are 4 fieures, 1 t,.;.ble,LLnd 3 Soviet references.
ASSOCIATION: Otdel fiziki tverdogo tela i poluprovodnikov Akademii nauk
BSSR (Departement of Solid-state and Semiconductor Physics
of the Academy of Sciences BSSR)
November 9, 1961
,ard 3/4

3/020/62/143/003/012/029
B100102
AUTHOR: Sirota,,N. N., Member of the AS BSSR
TITLE: Temperature dependence of the electric conductivity of solids
PERIODICAL: Akademiya nauk 338R. Dok)Adyg v. 143v no. 3, 1962# 567 - 569
TEXT: On the assumption that the reciprocal relaxation time in a crystal
lattice is proportional to the sum of the mean squares 2
u of the dynamic,
S,T-
2
and the mean squares u S C of the statistical shifts of the ions from the
equilibrium positions, 2m*(ru +
I 7_7 bolds for the electric izesisti
2 59T S'C~ 20
ne
ty. m* is the effective electron mass, e the electron charge, n the effe
tive electron concentration. ik2 can be calculated by the Debye-Waller
S,T
theory for the temperature factor of X-ray scattering in a lattice if
MT
the characteristic temperature 0 is knowns,
M
r vx t -
+ 4
s.r
MWL %
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B/02o/62/143/003/012/029
Temoerature dependence of B104/B102
x xdx X M is the ion mass.
e. x T #/T
0 WAS T dx
X + ill
PT= 4
.0 (5) is ob-
tained from both equations. It describes the temperature dependence of
the resistivity of a metal with-cohstant electron concentration and wi
tb
constant m*. If the electron concentrationdepe~nds on temperature in the
form n - n exp(-4n,/2lcT),
0 6MOAS r xdx
~aElw +
PT RV) e_1
45
(6) is obtained!
for the resistivity. With combined (n+p) oonductivity
6A2 T 2 dx
'k
P r wk-0 (_i + T,
,eAE,i2*r pe,&EpIMT). 2 + 2
X (A +A (7) is obtained if'm* Ae and m*/n.pe
e/nOee p
A . The temperature dependence of the electric conductivity is detirmined
P
Car 2 3
'130

S/020/62/143/003/012/029
B104/B1O2
Temperature dependence of ...
by functions of the characteristics temperature and the activation energy,!
The latter is directly related to the lattice energy. Hence, the electric.
conductivity considerably depends on the lattice energy. For metals in
which the current is condacted both by metal electrons and by-electrons-
bound to impurities,
6M*h2 (D
P P.- +-
nokmo [~-Xj'
+ B (8).
1+
is obtained. Therej
are 3 figures and 6-referencess I Soviet and 5 non-Soviet. 0
ASSOCIATIONt Otdel fiziki tverdogo tela i poluprovodnikov Akademii nauk
BSSR (Department of Splid State Physics and Semiconductors
of the Academy-of Sciences BSSR)
SUBMITTED: November 151 1961
Card 3/3
7C)

S/020/0'2/144/001/022/024
Dependence of the temperature ... B120101
only harmonic vibrations are considered. The mean square displacement
U~ of coupled lattice oscillators of a gram-atom of a &olid is given by
;D) T
- t2n~n4n)(Ptl)/n (p/n
2 r
UZ: + I (X,
-)T ~n P,n) , where 1/X kT/h?jo;
n( P/n)p~n Xp P-1 PX n
x e-
X = hV/kr,'; 0 hU /k; (p/n)(T/G)n; I(Xlp,n) x. As t1ia
0 x
2 2 e
ec~,,;~ation B.,~, 6r, -u S,T relates the temperature coefficient to the mean
one 2h2 n(Djn) (P+')/n no/n)
scuare displacemer has BT = MkB r((p+l)/n) 2 n(p/n ),/n
For a special case where p 2 and n Ij one finds:
/P
, 2~,
B., 1 2 1 For the Gauss frequency spectrum
7 + X72 2, 1 (X) I.
U160 2
dz ~e_ d0 one obtains u '(Gauss) ='kh/4 OL/T, --f+ 2 -,i~ (X) 11' and
Card 2/3 S,T L., -

38111
L4 0 S/020/62/14,~/002/6247/028-7
B1 01/13110
AU,2HORS: Sirota, N. N., Academician AS BSSR, and Gololobov, Ye. M.
Tl*'-LE-. Atomic scattering factors and electron density distribution
in aluminum antimonide at 20 and -1000C
PERIODICAL: Akademiya nauk SSSR. Doklady, v. 144, no. 2, 1962, 398 - 401;~
: _P,
T-EXT: ConcludinE a series of studies'on atomic scattering factors of 1j
aitimonides the authors give the scattering factors of the AlSb ions and
the electron density in AlSb as determined by a method described earlier
(DAN, 143, no. 2 (1962))L. The squares F2 of the structural amplitudes are
calculated from the intensity of the powder pattern reflexes (cf. Fig. 1).1
1;~r2i
The following values were obtained for the Gaussian distribution p,- A
of the electron density: at 20OC: A Al = 62-381; aAl = 11-58711 ASb- 418-413;,
a ~ 14-7106; at - 100OC: A = 68-951; a 12-411; A - 466-46; a
Sb Al Al~ Sb Sb
=15-871. The electron density distribution in the [1111and L113] direc-
tions of the (110) plane of the unit cell does not essentially differ from5i
th,at of GaSb and InSb. Estimation of the ionic radii gives the following'
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S/020/62/144/002/024/02a.
Atomic scattering factors and ... B101/B110
0
values in the plane with 1 el/X electron density: r 0.6 r
Al Sb 0.93A1
and' in the plane with 0-5 el/i electron density: r 0.75 r 1.2
Al Sb
The characteristic temDeratures 9 for AlSb, GaSb, and InSb are 320, 240 ,
and 210OX, respectively. The data serve as a contribution to the investi-:
gation of inte~atomic interaction in-LIIIBV semiconductor6. There are
f4
gures. The most important English-language reference iss G. Gisecke,
4
H. Pfister, Acta Crystallogr., 11, Pt- 5 (1956)-
ASSOCIATION: Otdel fi--iki tverdogo. tela i poluprovodnikov kkademii nauk
BSSR (Department of Sulid-Btate Physics and Semiconductors
of the Academy of Sciences 3SSR)
SUB!"ITTED: january 26, 1962
Fig. 1.
whose sum
reflexeg
Card 2/3
2 3 2
? , h
F as a function or (1) for reflexes with even indices,~
is divisible by four; (2) for reflexes with odd indices; (3) for'
with even indices whose sum is indivisible by four; (CL) at 200C; 1
4-

~'Aoilnlic scattering factors and
at -100 OC.
Fig. 1
S/020/62/144/002/024/028
B101/B110
bard 3/3
v

S/020/62/147/oo6/017/034
B164/B160
AUTHORS: Academician,AS BSSR, Sheleg, A. U.
TITLE; Diamaenetic susceptibility and electron density distributim
in Grey tin
PERIODICAL: Akademiya nauk SSSR. Doklady, v. 147, no. 6p 1962, 1344-1347
TEXT: The aim was to determine experimentally the atom-scattering f of
0
grey tin at room temperature and at -100 C and to find the electron densi
distribution in the crystal from it. The grey tin wa*s obtained from
high-purity white tin by recrystallization between -10 and -200C. The
CuK -radiation reflexions from powder compact-samples, were taken on a
a
JPG-50M (URS-50I) apparatus with GM counters. Results: From the graph
2
In f as function of h where h is the lattice index# it follows
Sn i i
that f is a Gaussian curve-, if h2 > 16. using a method given by N. N.
Sirota, A. U. Sheleg and N. M. Olekhnovich (Da' 132, no. i, (196o)) the
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S/020/62/147/oo6/017/034
Diamagnetic susceptibility B104/B180
electron density distribution Q Q, + Q2 in plane (110) of the grey tin
crystal lattice is calculated. For the parameters A and a in the relation
Lex 2) the values A - 406,31 and a - 15-708 were obtained for
Q p(-ar
1 0
room temperature and A a 5571,98 and a . 19.637 for -100 . The Q2
distribution was obtained by summation of a three-dimensional Fourier
series. Results: As with diamond, silicon and germanium, in grey iron
there is a "bridge" with density of 0-37 electrois/113,*lying in the [1111
direction between neighboring atoms with coordinates 000 and 1/4, 1/49 -
1/4. Temperature changes hardly touch this value. In the sit a I/ ), 1/2f
1/2 and 3/4, 3/4, 3/4 electron density minima, 0-05 electrons~3 and 0
respectively, were found. A temperature drop raises the maxima and
lowers the minima. The diamagnetic susceptibility 38-10-6 calculated.
from the electron density distribution according to N. N. Sirota (DAN,
142, no. 6 (1962)) agrees satisfactorily with experimental data. There are
4 figures.
ASSOCIATION: Otdel fiziki tverdogo tela i poluprov6dnikov Akademii nauk
BSSR (Division of Solid State and, Semiconductor Physibe
Card 2/3 of the Academy of Sciences BSSR)

Diamagnetic susceptibility ...
S/020/62/147/006/017/034
B104/BI80
SUBMITTED: june 22, 1962
Car.d 3/3

SIROTA) N.N., akademik, otv. red.; SOTSKOV, B.S., red.;
ROZENBLAT, M.A., prof., red.; BASHKIROV, L.A., kand.
khi-. nauk Jq red.; KHOLYAVSKIY, S., red.izd-va;
VOLOKHANOVICH, I., tekhn. red.
[Ferrites and contactleas elements] Ferrity i beskon-
taktriye elementy; dok2ady. Minsk., Izd-vo AN BSSR, 1963.
418 p. (MIRA 17:3)
1. Vsesoyuznoye soveshchaniye po ferritam i po beskontakt-
riym magnitnym elementam avtomatiki. 3d., Minsk. 2. Akade-
miya nauk Bel.SSR (for Sirota). 3. Chlen-korrespondent AN
SSSR (for Sotskov).

SIROTA, N. N. and VARIKASH, V. M.
----
*Change of X-ray Diffraction and Physical Properties of Triglycine Sulfate
at the Curie Point.*
report presented at the Symposium on Ferroelectricity and Ferromagnetism,
Leningrad, 30 May - 5 June 1963.

So'.id solutions in the system InP-GaP. N. N. Sirota, V. V. Rozov.
'.7nvestiqation of solid solutions of InP-GaAs. N. N.-Sirota &, L. A.
makovetskaya.
Physical properties of the system ZnTe-CdTe. N. N. Sirota, V. 0.
Yanovich.
Physical properties of ternary alloys of the system Zn3 A52-Cd3As2.
N. N. Si E. M. Smolyarenko.
Semiconducting properties of manganese-telluride and selenide.
114. Sirota, G. 1. Makovetskiy.
Produciion of films of semiconducting compounds of the type A V6VI
and Al BV on antimony by reactive diffusion. N. N. Koren', N. N. Sirota.
(25 minutes). (Presented by N. N. Sirota).
Report presented at the 3rd Ilational Corifem-nce on Semiconductor CWTOUrdsl
Kisliinev, 16-21 Sept 1963

ACCESSION NR: AT4035412 S/0000/63/000/000/005/0010
AUTHOR: Sirota, N. N.
TITLE: The kinetics of Irreversible processes In the magnetization reversal of
ferrites with a rectangular hysteresis loop
SOURCE: Vsesoyuznoye soveshchanlye po ferritam I po beskontaktny*m magnitny*m
elementam avtomatikl. 3d, Minsk. Ferrity* I beskontaktny*ye el~nty* (Ferrites
and noncontact elements); doklady* soveshchanlya. Minsk, lid-vo AN OSSR, 1963,
5-10
TOPIC TAGS: computer. magnetic core storage, ferrite, ferrite magnetization,
magnetization reversal
ABSTRACT: In a theoretical treatment of the multitude of elementary processes
involved in ferrite magnetization reversal (generation and growth of centers in-
fiuenced by the direction of the field and magnetization axes, reorientation of
domains and other effects), the author identifies two possible approaches in the
study - a minute analysis of the microscopic mechanism of domain wall movement and
magnetization vector rotation, and a static macroscopic Investigation of the
birth and growth of reversal centers in which the domain growth rate Is taken into
account. roceeding from the theory of crystallization and the fundamental ex-
Card

SIROTA, N.M.; KHACHATRYAN, Yu.M.
Effect of hydrostatic pressure on the susceptibility of copper-zinc
ferrites. Fiz. tver. tela 5 no.11:3110-3112 N 163. (MIRA 16:12)
1. Otdel fiziki tverdogo tela i Doluprovodnikov AN BSSR, Minsk.

S/250/63/OQT/003/004/006
A059/A126
AUTHORS., Sirota, N.N., Koren', N.N.
TIT12t The reactive diffusion constants and the main physical parameters
of the semiconducting compounds AIIBYI and A1IBV
PERIODICAL: Dolclady Akademil nauk BSSR, v. 7, no- 3, 1963, 160 - 162
TEM The relation between parameters characterizing the interatomic in-
teraction energy in the compounds of zinc with elements of the 5th and 6th
groups of the periodic system, and the constants of reactive diffusion of these i
elements into zinc are established. Starting from the general expression of the
reactive diffusion coefficient given as a function of temperature
D - Do e-OJRT
the relation between the factor Do and the activation energy of diffusion, on
the one hand, and the characteristic temperatures, heats of formation$: fusion
temperatures, and lattice energies of the forming compounds on the other, is ex-
amined. Reactive diffusion is accompanied by the formation of films of the sead-
Card 1/3

The reactive diffusion constants and the
S/250/63/007/003/004/006
A059/A126
conducting compounds mentioned on the surface of single crystals of zinc. The
activation energy of diffusion was found to depend on the position of the rela-
tive element in the periodic system, and to decrease, for the case given, in the
order ZnQ - ZnS - ZnSe - ZnTe - ZnSb, which also holds for the heats of forma
tion and the lattice energies of these compounds, The activation energy depends
almost linearly on the heat of formation and the lattice energy, with the great.
est deviation found for the relation between q and A U. The relation between I
the activation energies of diffusion and the fusion temperatures of the com-
pounds forming in the reactive diffusion of the elements of the 6th group into
zinc, is also almost linear. Thus, the mechanism of reactive diffusion is,
without fail, connected with the diffusion of zinc and the elements of the 5th
group through the semiconductor films formed, with the limiting factor being the
diffusion through the compounds formed and not the formation of these compounds.'
The proportionality between the fusion temperature of the compounds forming In
reactive diffusion and the activation energy of diffusion shows that the mean
square shifts of the ions in these compounds are inversely proportional to their
fusion temperature. The width of the forbidden zone of the compounds mentioned
is the greater, the greater their heats of formation and the greater the activa-
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S/250/63/007/003/004/006
The reactive diffusion constants and the .... A0591A126
tion energy of reactive diffusion. There are 2 figures and 2 tables.
ASSOCIATION: Otdel fiziki tverdogo tela i poluprovodnikov AN BSSR (Department
of Solid-State and Semiconductor Physics of the AS BSSR)
SUBMrMD: November 17, 1962

AID Nr. 9 9LI 13 June
InP-G~~s SYSTEM (USSR)
Sirota N. N ano L. A. Makovetskaya. IN; Akademiya nauk BSSR, Doklady,
V. 7, np. 4,.Apr 1963, 230-232. S/250/63/007/004/002/005
The Dpp'artment of Solid-State Physics and Semiconductors of the Belorussian
Acade._.n,'y of Sciences has conducted a study of the quasi-binary InP-GaAs system.
Nine alloys of the syst~ern with GaAs content increasing in steps of 10 mol la were
synthesized from In, Ga, P, and As with purities of 99. 99510, 99. 951., 99. 999%,
and 99.1999%, respectively. Synthesis and subsequent homogenization (by zone
melting) of 'u-.e alloys were carried out at 1100 to 1300* C. -X-ray diffraction patterns
showed that the lattice constant "a" varied as follows- with increasing GaAs-co
0 +
tent: 5. 833 -"- 0. 002A for pure InP, a decrease to arinimum bf 5. 561 - 0. 0021
at 41
O'i.: 'aAs, and then an increase to 5. 563 0.002 for pure GaAs. The micro-
hardnqss-composition curve followed the reverse pattern: it increased from
420 for pure InP to a maximum of 800 � 20 kg/MM2 at 5076 GaAs
and than dronned to 640 50 kg/mm2 for pure GaAs. Both phenomena are charac-
teristic for systems with a continuous series of solid solutions. Microscopic
exams ,hation confirmed that all the alloys tested have a single-phase structure. [WWI
Card 1/1

SlROTA. N.N.; KORMP, N.3.
Formation of semiconducting fllas of zinc telluride on zifte single
nrystals in reactive diffusion. DokI. All BSSR 7 no.6:373-375 Je
163. (MRA 16:10)
1. Otdel fizilki t,.,Prdogo tel& I poluprovodnikov AN BSSR.

L 16276-63 ..EWP(q)/EWT(m)/BDS AFFTC/ASD __ JD~
ACCESSION NR: AP3006003 S/01"c~50/63/007/007/0446/04484~,~I
AUTHOR: Sirota,, N, N.; Rozov., V. V.
TITLE: Identity period in the crystal lattice and microhardness of indixmn
ions
phosphide-gallium phosphide solid solut
I/
SOURCE:'I/ BS Doklady*,, v. 71 no."'T., o,631 446-448
TOPIC TAGS: A(III)B(V), A(III)B(V) compound, semiconductor.. indium. phosphide,
gallium phosphide,, indium phosphide galliw~,phosphide system, pseudobinary
system, solid solution, indium gallium alloy., phosphorus.,.synthesis, zone
leveling,, traveling hot zone., microhardness, identity period, lattice constant,
Vegard lav
ABSTRACT: Because literature data are contradictory, the pseudobinary InP-GaP
semiconductor system has been studied to ascertain whether solid solutions exists
in the system. Samples of InP-GaP covering the entire composition range were
synthesized in a two-zone furnace with simultaneous zone leveling by diffusion
of molten In-Ga alloys from a phosphorus source in an evacuated quartz ampoule.
A phosphorus pressure of 5-7 atm was maintained inside the ampoule by setting
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L 18276-63
AccEsswN m.. Moo6oo3
the temperature of the cool zonej, that containing P., At 430C.* The temperature
in the traveling hot zone varied from 3.100 to 1280C depending on composition.
Unreacted metal was removed*in warm HCI. The microhardness of the crystals
thus obtaineawas measured with a IIMT-5kpparatus, and thedLattice constant was
determined from x-ray powder patterns ifi a UUMS-50 ionizat$
pn chamber with Cu.
K,-radiat.Lon. The results of both measurements are given 1~ Fig..I of the
Enclosure. The data of Fig. 1 and of micrographic analysisidisclosed the
existence., in the high-temperature region at least, of a co#tinuous series of
InP-GaP solid solutions with an sO st linear relationship Idetween lattice con-
stant and composition., in accordance with the Vegard lav. Otig. art. has- I
figure.
ASSOCIATION: Otdal fiziki trerdogo tela i poluprovodnikov BSSR (Department.
-of Solid State and Semiconductor Physics, All BSSR)
SUMITIMD: Web63 DATE Am. o6sep63 ENCL: 01
ITO SOV: 002 MM: 002
SUB CODE- PH I
Card 2/3

KORENIJ, N.N.; SIROTA, N.N.
Formation of Sb2S3, Sb2Se3, and Sb2Te3 films on antimony
in the process of reactive diffusion. Dokl. AN BSSR 7
no.10:666-668 0 163. (MIRA 16:11)
1. Otdel fiziki tverdogo tela i poluprovodnikov AN BSSR.

ACCESSION NR: AP4002835 S/0250/63/007/011/0740/0742
AUTHOR., Makovetskiy, G. I.; Sirota, N. M.
TITLE: Dilatometric analysis of manganese selenide
SOU,RCE: AN BSSR. Doklady*, v. 7, no. 11, 1963, 740-742
TOPIC TAGS: manganese selenide, dilatometric analysis, stable
modification, unstable modification
ABSTRACT: The experiments described are part of a series of system-,
atic investigations of compounds of manganese and elements of group V1
which a#.e being carried out in the laboratory of the Otdel fiziki
tverdogo' tela i poluprovodnikov AN BSSR (Department of SoHd State Physics
and Semi condudtors , AN BSSR). The immediate purpose of the present
work was the investigation of the temperature dependence of the
linear expansion coefficient within the 100 to 700K range.' A quartz
dilatometer with 'a treading accuracy of 0.0021mih in vacuum was used-ib
the measurements. The specimens, 25-30 mm long and 5.2 mm in diam-
eter, were obtained,by sintertng HnSe at 800C after the two components
had been synthesize'd in quartz tubes by prolonged heating at 1100C..
Card 1/2 1
r

ACCESSION NR: A44002835
The specimens, aqcording to analyses, were single-phase. The resul *ts
show a considerable anomaly of the coefficient at about 140-150K, ,
:presumably cause4 by antiferromagnetic con%,~kerqion. At 260-270K the
dilatometric curve contracts appreciably. A aonsiderable temperature
hysteresis was ob'served during the cooling process, accompanied by
.expansion of the.specimen with cooling between 180 and 160K. X-ray'.
:graphs of lattice modification, taken at room,itemperature and at 197K,
show, in the lat'ter case, thek presence of lines characteristic of. non-
stable low-temperature modif-,kcation of HnSa, whose specific volume .
appreciably exceedp that of,high-tempersturelmodification. Thun the
anomalies observed in the 250-270K range ~snnot be ascribed to anti-
ferromagnetic convprsion, but represent a polymorphic phenomenon.
Orig. art. has: 2 figures.
ASSOCIATION: Ot0e;1 fLziki tverdogo tela I ppluprovodnikov AN BSSR
(Department of Solid State Physics and Semiconductors, AN BSSR)
SUMMITTED: 23Ju.163 DATE. ACQ: 03Jsn64 ENCL: 00
,I
SUB CODE: PH NO,~EF SOV3 003 OTHER: 007
Card2 2
i n

ACCESSION NR~ AP4007444 S/0250/63/007/012/0805/0806
AUTHOR: Sirota, N. N.; Khachatryan, Yu. M.
TITLE: Effect of hydrostatic pressure on the Curie point of nickel-
copper-zinc ferrites
SOURCE: AN BSSR.. Doklady*, v. 7, no. 12, 1963, 805-806
TOPIC TAGS: pressure effect, nickel ferrite, copper ferrite, zinc
ferrite, Curie point, hydrostatic pressure, ferrite
ABSTRACT: This work describes an investigation of the temperature
and pressure dependence of the magnetic permeability of two types of
zinc ferrites, both containing 60 mol% zinc. In addition to zinc,
one type contained 40 mol% CuFe204, the other, 30 mol% NiFe2O4 and
10 mol% CuFe204- The toroidal specimens 4.2 and 2.6 mm in diameter
and 2-4 mm thick, were placed in a pressurizing medium of aviation
gasoline, in which temperature control was effected by an electrically
heated miniature pyrophyllite cylinder enclosing the specimen. Pre-
cautions were taken to ensure a constant temperature and magnetic
field. The results show that both types have maximum permeability
Card 1/2

ACCESSION NR: AP4007444
and the minimum Curie point at normal pressure. Increasing pressure
causes a sharp drop in permeability and a slight rise in the Curie
point without affecting the general character of the temperature
dependence of the permeability of the specimens. The shift of the
Curie
.3ointca3peared as a linear function of pressure up to
8 x I kg/ m , but the curve was steeper for the three-component
10-3 2/kg) than for the two-component speci-
specimens (2.7 x del-cm
mens (1.52 x 10-3 deg-cm /kg). The permeability change as 4 function
of pressure appeared to be a reversible process within the temperature
range from 20 to 150C. Orig. art. has: 2 figures.
ASSOCIATION: Otdel fiziki tverdogo tela i poluprovodnikov AN BSSR
(Department of Solid State Physics and Semiconductors, AN BSSR)
SUBHITTED: 27Jul63 DATE ACQ: 24Jan64 ENCL: 00
SUB CODE: PH NO REF iov: 001
Card
L 2 /_2 . .. ... ------
OTHER: 000

S/020/63/148/001/013/032
.Bl02/BI66
T
AUTHORSs Sirota,' N. N., Member of AS BSSR, Olekhnovich, N. U.
TITLEs Roentgenographic determination,of the diamagnetic ausceptibili.
ty of certain ion and semidbnductof compounds
PERIODIGAL: Akademiya nauk SSSR. Doklady, v. 148, no. 1, 1963,* 71 73
TEXT: 'The lattice maimetic susceptibility
NO
X = )Cd + X, 2 r2 + -1 Ar
6ftIC 3 El- EI
is represented as the sum of the diamagnetic (.Langevin) component and the
paramagnetic (Van Vleck) componenti M(J, i) is an off-diar4l element of
the magnetic moment, E -E the forbidden-band width, and r. the*sum of
the mean squares of the electron orbit radii. The first term can be de-
termined experimentally from the electron density,of the lattice, the
second from the amount that the electron density distribution deviates
from spherical distribution. These terms were deiermine~-for the arsen-
Card 1/3

3/020/63/148/001/013/032
Roentgenographic determination B1021IM6
obviously a certain law. There are 2 tables.
ASSOCIATIONt Otdel fiziki tverdogo tela, i poluprovodnikov Akademii nauk
BSSR (Department of Solid State and Semiconductor Physics of
the Academy of Sciences BSSR)
SUBMITTEDi July 27; 1962
Card 3/3

L 324,1043 EWT(l)/M(k)/ZW(b)-2/NS(s)-2/BDS AFFTCIASDIESD-31SSD
F75-4/Ft-4 AT/IJP(C)
ACCESSION NR: AP3001399 S/0020/63/.150/004/0781/0783
(6
AUTHOR: Sirota, N. N.
4-%
TITLE: Paramagnetic component of magnetic susceptibi f semiconductor crystals,
evaluated from experimental data on electron density distribution
SOURCEs AN SSSR. Doklady, v. 150, no. 4, 1963, 781-783
TOPIC TAGS- paramagnetic component, magnetic susceptibility, semiconductor
crystal, electron density disiribution, diamagnetic component, neutron -diffraction
pattern, X-ray diffraction pattern
ABSTRACTs It was shown in a prevdous paper by the author (DAN, vol. 1142, no. 6,
1962, page 1278) that the diamagnetic component of the magnetic susceptibi3-ity of
semiconductor crystals can be determined by using electron density data found
experimentally by X-ray or neutron diffraction patterns. However, it is known that
the absolute value of the paramagnetic component in these crystals may be of the
same order of magnitude as the diamagnetic one, Present work shows that it is
also possible to determine the paramagnetic component in a similar manner. Since
the square of the wave function is proportional to the electron density, the
Card 1/2
- - - - - - - - - - -

L 12410-63
ACCESSION NR: AP3001399
latter, eocIperimentally determined) gives the expression of the wave function. The
latter, in an analytical approximation,, is to be used in the Van Flock para-
magnetic term of susceptibility. "The author expresses his gratitude to N. M.
_.OlekhnovAch and A. U. Sheleg for valuable discussions." Orig. art. has: 1
equation.
ASSOCIATION: Otdel fiziki tverdogo tela i polyprovodnikov, Akademii nauk BSSR
(Division of Solid State Physics and Semiconductors, Academy of Sciences, BSSR)
SUBMITTED: 23Dec62 DATE Acq: olAa63 ENCL: 00
SUB CODE: 00 NO REF SOV: 006 OTHER: 006
'Card 2/2

L !%L6-6 EW (.l)/BDS AFFIC/IJPI A;P
OUST= NRt AP3005435 S/W20/63/151/005/1079/1080
_37
'AUTHORS: Sirota, N. N. (Academician); Mekhnovich, N. M.
TITLEz Paramagnetic component of the magnetiesuseeptibilit %f semi-!
conductor compounds A sup 3 B sup 4 -determined by X-ray diffrac,tion,
analysis,
!SOURCE: AN SSSR. Doklady*, v. 151, no. 5, 19"S3, 1079-lo8o-
TOPIC TAGS: paramagnetic compo
nent of magnetic susceptibility, semi- 1
conductor , X-ray diffraction analysis, aluminum all m, indium, fil,i.
Ga, in, paramagnetic component, magnetic susceptibTlity'
ABSTRACT: An experimental method for determining the paramagnetic
component of magnetic susceptibility by X-ray diffraction is developed
further in this paper. It was applied for determination of the shape!-
and deviation from spherical symmetry of the covalent "bridges" formed,_-
by Sp3-electrons. The computational results for the paramagnetic com--;
ponent for arsenides and ahtimonides of aluminum, gallium, indium are!
given. Authors showed that X-ray diffraction method permits an in-
dependent determination of the dia- and paramagnetic moments. Orig.
ASSOCIATION: Department of solid state physics and semiconductors, Academy of Sci.~ ESSR
Card

SIROTA, N.N.) akademik; SIELEG, A.U.
Magnetic susceptibility of semiconducting elements of the 4th group
as determined by X-ray diffraction analysis. Dokl. AN SSSR 152
no.1:81-83 3 163. (MIRA 16:9)
1. Otdel fiziki tverdogo tela i poluprovodnikov AN BSSR. 2. AN
BSSR (for Sirota).
(Semiconductors--Magnetic properties)
(X-ray diffraction examination)

GORSKIY, F.K., dots., otv. red.;
SIRMA, N.N., akademik;
[Mechanism and kinetics
netika krista"llizatsii.
!,60 p.
VARIKASII, VXI., oty. red.;
red.
of crystallization] N.,ekhinim i ki-
~Iinsk, Nauka i tekhni-ka. 19U,.
(MIRA 17: 1-1)
1. Akademiya riavuk BSSR, Mipsk. Addzel fiziki tsverdaha tsela
i paupravadnikoi. Nauchiq7'sovet po fizike tyerdogo tela.
2. Akademiya nauk Belorusskoy SSR (for Sirota).

ACCESSION NR: AP4034901 S/0181/64/006/0054267/1269
AUTHORS: Pavlov
V. I.; Sirota, N. N.
TITLE; Timo development of the impulsive reverse magnetization process .in
mignesium, nickel manganese ferrite with rectangular hysteresis loop
SOURCE: Fizika tverdogo tela, v~ 6. no. 5, 19611,, 1267-1269
TOPIC TAGS.- ferrite, magnetic property, magnetization,, hysteresis loop
ABSTRACT: The characteristics of impulsive reverse magnetization as a function
of time was investigated with the ferrite '(Mg0)o-.3(Ni0)~;(W0~.'4F%031 which has a
!
;rectangular hysteresis loop, a coercive force H 1.1 oersted, and a maximum
induction BM = 2500 gauss. The time rate of change of the induction YB
was
measured a*s a function of time in fieldn of 2.5G--3.-5*4, 4.20, 5.92, 6. oersteds.
The change in time of the induction was found to be well described by the
expression where k is
k
&Lrd 1/2

ACCESSION fiRt AP140111691, S/0250/6ii/00/001/002h/0025
AUTHORS: S,irotas Ne N.1 Shimanskayas V. F.
TITLEi Lattice constant of zinc sulfide-cadmiun sulfide solid solution film
SOURCE: AN BSSR. Dokiady*, V.& Ba no, 19 24-25 iq6 L/
TOPIC TAGS: zinc sulfide, cadmium sulfide,, ZWS US solid solutions lattice
constant, ZnS CdS phase compositions ZdS CdS structure, vaporized coating, x-ray
apparatus URS 501
ABSTRO.CT: Films of the binary system ZnS-CdS have been subjected to x-ray analy-
sis in order to determine.its phase composition, its structure, and its crystal
lattice constants Experiments were conducted directly after film deposition and
also after *a heat treatment of films which were produced by sublimating a pressed
mixture of ZnS and CdS of a definite composition onto glass and quartz plates.. The
process was carried out in a vacuum of no less than 10-4 mm Hg. For CdS the tem-
perature of the plates was held at 90C and for US at 200C, After the deposition
the samples were held in vacuum at 300C. Microscope inspection and x-ray analysis
proved that the films were either polycrystalline or monocrystallinal the latter
Eawini/i2am 0.5 to 1.6,,u in thickness. They were monophase in type and
a

ACCESSION NR: Ap4o14696
sphaleritic in structure. La-,,Acs constant was calculated from x-ray photographs
taken with apparatus URS-50I* FIgure I of the Enclosure shown the relation of thb
constant to the composition of the solid solution4 Lower rates of coating in
vacuw.t and in hydrogen sulfide tended to produce nonacrystallins films while faster
rates favored the polycrystalline ones. Origo art* brat 1 graph and 2 atcro-
photographs.
AISSOCIATION: Institut fiziki tvardog tela I baluprorwodnikov AN SSSR (Institute of
Solid State Physics and Semdconduc= AN BSSR~
SUBMITTED: OlAug63 DATI ACQ# 26yeb6h ANCLs OOL
SUB CODEs PH NO UP SOVs 000 OTHMs 002
Card

4CCMION NR: AP4020379 S/0250/64/008/002/0087/0089
AUTHORS: Danilikevich$ M. Iej Sirota
TITLE: Electrical resistivity and the activation energy of nickel maganess aim
ferrites
SOURCE3 AN BSSR. Doklady*, v. 8. no. 2. 19640 87-89
TOPIC TAGS: electric conductivity, electric resistivity, ferrite; activation
energy
ABSTRAGTt The authors have studied the system NiF6204 - )W6204 - ZnFe.04 to
aetermine the resistivity and activation onerey in relation to composition wd-
temperature. The samples 'were prepared from oxide powders and Fa=3 by ordinary
ceramic techniques. Resistivity was measured by the compensation method on
cylindrical samples 20-30 mn long and about 8.5 mm in diameter in the temperature
interval from 40 to 1000, Heating was maintained at each temperature for about 30
minutes. The activation energy was determined graphical2y by measuring the log QU
the resistivity in relation to tbe.temperaturej 1/V, The hiehest resistivity,, ji~
-CPrd*-
~1/2

ACCESSIO14 NrR; AP4040920 5/0250/64/008/005/0289/0291,
AUTHORS: Dlakovatskiy) Go I.; Sirotas No lie (Academician)
TITLE: X-ray. 5tudy of quasi-binary systems MnSe-Mae
SOURCE: At! D:;0'r". Dokladyif, v. 8, no. 5. 19643 289-291
TOPIC TAGS- so.1id solution, lattice charge, single phase,, quasi binary system,
electrolytic raanganeso, oxide film, microhardness, tolluriumj seleniuiNx ray
instrument, UR,3 50.1, PW 3 device
A3SERACT - pagation domains of solid solutions and laws governing lattice
charros as a, 'iuic'~~-on of the state and single phase domains in quasi-binary
systoms ware irrrestiGated by x-irradiation of M3Se-MnTe', specimens, Electrolytic
manat- ms used, and its surface was kept clean of oxide films by heating In
ganoso
vacuui-it, Twi,-n d ist,Elled (99.99 To) Te and So specim ens wore prepared by sinterping
in Erracuatve-d under careful mixing, The x-ray instrument was a URS-501
device 4it'li Kz4 - copper radiation with a Geiger-mLlor counter. The experimental
results wera d1opictuad graphically in terms of lattice constants a(l) and c(l)
versua tmol% By increasing the To content the lattice constant grows up
C.rd

ACCESSION NM, i aho4og2o
to a - 5.614 91 ab 30% MnTe. On the other hand., increasing the MnSe content causes
a linear drup in both c and a., down to c - 6.552 X, a - 4.005 1 at NnSe content of
LO%, whereas c/a grows to 1.636 in the same interval. 141icrohardness H measure-
ments on the PMT-3 device indicate. a sharp rise in the solid solution hardness
from 90 kglmmip- at. 0 MrSe to 223 kg/mm2 at 30 mo1% XnTeo* "On the other hand,, H rises,
with MnSe contant from 100 kg/mm:2 at 0 MnSe to 208 kg/mm2 at 40% 1,a0e. These
results sho;u the presence of a wide range of solid solutions with selenide and
telluride bases. Orig. art, hast 2 figures.
!ASSOCIATION: Institut fiziki tverdogo tela i poluprovodnikov 'U1 BSM (Institute
of Solid State PI-*rsics and Semiconductors Ali BSSR)
A
SUBI-aTTED: 17jan64 ENCLt 00
SO CODE: SS NO REP SOV: 002 OrMs 006
Card

ACCESSION NR: AP4042724 S/0250/64/008/006/0369/0371
AUTHOR: Danill*kevich, M. I.; pirota, N. N.
TITLE: Dielectric permeability and conductivity activation energy of nickel-manganese-
zinc ferrites
SOURCE: AN BSSR. Doldady*, v. 8, no. 6, 1964, 369-371
TOPIC TAGS: ferrite, nickel manganese zinc ferrite, semiconductor, dielectric permea-
bility, electrical conductivity, conductivity activation energy
ABSTRACT: Disk-shaped samples of N1Fe204 -'11nre204 -ZnFe204, 3.5-4.5 mm thick and
21 mm in diameter, with a constant manganese ferrite content of 20 wt.%, were used in a
sWdy of the relationship between electrical permeability, specific electrical resistance and
temperature in ferrites. The dielectric permeability and the tangent of the angle of loss
ivere determined at a frequency of 108 cps with the use of a Q-meter. The actual and
apparent dielectric permeability were found from the total permeability and the tangent.
Vrhen the activation energy of the ferrite systems was graphed against the square of the
reciprocal of tho dielectric permeability, a straight line relationship was obtained with
a slope of about 4-6 + 2 eV. The relationship between activation energy and zinc ferrite
Card 1/3

'ACCESSION NR: "4042724
t
with;
content Is shown in Fig. 1 of the Enclosure. As indicated, the experime" daft agree 1
the results calculated from the formula
alm*e'
4E 2V
Orig. art. has: 2 figures, 1 formula and I table.
ASSOCIATION: Inatitut fiziki tverdogo tela lpoluprovodnikovAN BSSR anstitute ci solid stag
and semiconductor Physics,, AN BSSR)
1 SUBMITTED., 23Jan64
ENCL:- 01
SUB CODE: SS, EM NO REF SOV: 005 OTHEOEL- 000
2/3
Card

ACCESSION NR: AP4042724
20 40 60 do
Enclosure 01.
Fig. 1. Relationship between the activation energy of nickel-manganese-zine ferrites and
their zinc ferrite content: 1 - experimental data; 2 - values of AE calculated from theformula.
Abscissa = mol. % ZnFe204-

X-11

Card 3/3

1W0-65 EWT (1)/DIT (M)/T/I~t7P(t)/EFC,(b~-2/.'--IaTP(b) 1JP(c)/ASD(a)-75AWj3sD/ -
AS(mp -2/AP0C(b)/R9D GG1JD
US
ACCESSION NR: AP4044253 S/0250/64/008/007/0436/0437",
AUTHOR: Sirota, N. N.; Shimanskaya, V. P.
9
TITLE: The width of the energy.gap according to the absorption spec-:
tra of thin films 'of the ZnS-CdS system
SOURCZ: AN,BSSR. Doklady*, v. 8, no. 7, 1964, 436-437
U9
TOPIC TAGS: zinc sulfide base compound, cadmium sulfide containi
compound, zinc sulfide, cadmium sulfide, sulfide, zinc.blende,..
sphalerite, energy gap, absorption coefficient, film, spectroscopy,
semiconductor, optical filter, photoresistor
.ABSTRACT: The, width of the energy gap in.ZnS-CdS systems with.zinc
blende structure was deteunined from measirements -of the absorption on the
the long-wavelength side of the edge. The values averaged from
numerous experiments show that the gap width changes linearly,.de-
pending on the composition, from 346 ev for ZnS to 24~4e7_ for CdS The
above data apply to 0.1- to 1-1, films of the investigated sul-
fi--des and their solid solutions vacuum deposited on glass or quartz~--
substrata. Spectropbotometric measurements of the absorption spectra,
Cord 1/2

L 14470-65
ZACCESSION NR: AP4044253
~produced figures close to those obtained by other researchers (Gross.,
:Ye. F., and B. S. Razbirin, FTTip 2, 1960,11; Khansevarov, R. Yu.,
S.- -M. Ryvkin , --and_`.--N. - Ageyeva, --ZhTF,- 28,_ 1958, _480,_ The.
_d
~beenprompted-by-the applicabilitk.---of_ZnS--.CdS -an some, neeir
u
:mediate compounds of this quasi-binary system to varid a
!,techniques, including optical filters and photoresistors, Orige arto;
~has: 2 figures.
.ASSOCIATION: Institut fiziki tverdego tela. i poluprovodnikov AN HSSRj
!(Institute of Solid State Physics and Semiconductors,,AN:BSSR)
~,SUBMITTED: 12Feb64 ENCL:. 00
SUB COD'E-:- SS IC NO REF SOV: 004 OTHER: 001
Card_-2 2-_

P.
-65
L 15308 ZWT(1)/EED-2 ESD(dp)
ACCESSION NR: AP4045690' -9/0250/64/QG8/008/0506/65"'
AUTHOR: Pavlov, V.I., Sirota, N.K.
-TITLE: Some paWe characteristics oT-m-a-g-aasium-nicket-manganese, ferrites
ElOURCE: ANDSOR. Doklady*, v.- 8, no. 8, 1984, 605-60-8
t
TOPIC TAGS. ierrite, ferrite pulse property, ferri a magnetization, mapealum nickel
manganese ferrite, remagnedzation. time
-ABSTRACT: The authorUresent the basic results of an experimental determination of
the remagnetization time'r, the output signal Eout, the ratio Eiat/Ealilt of interface to.
Of
output signals,' and the ibreshold field H'0 for magnesium-nickal-manganese ferrites
the general formula M I Mnl_ e?04 With x = 0. 0 - 0. 7, y = 0. 0 - 0. 3. Tile exper-
imental unit consisted trad rec War-pulse generators wbich produced predetermined
magnetizing and remagaetizing 10, 000 cps pulses with a 0. 1 JA see. front length and. a
4 lAsee. width, and a UO-IM oscillator as the Indicator of the results. Ferrite torol",
1. 5 mm high and 2 (in) or 3 (out) mTn in diameter, were the object of a sWdy in Which
a remagaetizing-pulse, of 0. 9. 5.9, 6.1, 4.2, 3.6, 2.6, or 1. a e followed equal magne"_'
and
pulses of 6.. 9 e.. Value of Eout and Eint/Ecutvo variations in ferrite caimpositiont,
1/4

L 15308-65
ACCESSION Nlt.6 AP4045690 -- ---- ENCL08M., Ot:
Fig. 1.
Card 3/4

~tD 5
L I A 6-6 E~iT(m)/&'P(t)/E1dP(b) IjP (a) /,~bj4D M IPYdLl;',SD (a) -51SSDjRtaj (a)/
FISJD ( t JD
ACCESSION NR: AP04NO6 S/0250/64/008/009/0572/0574
AUTHOR*., Makovetskaya, L. Sirota, N. N.
TITLL: Width of the forbidden band in solid solutions of Indlu al-2-~ShIde- and
gaMym Lrsenide, determined by the edge of the main optical absorption band
SOUR(E: AN BSSI. Dokiady*, v. 8, no. 9, 1964, 572-574
,TOPIC TAGS: absorption band, optical density, solid solution, forbidden band
width, indium phosphide, gallium arsenide
ABSTRACT: The authors made a systematic study of the variation in optical density
of sanples (10 compositiorus) of InP-GaAs solid solutions as a function of wavelength'
from 0.2 to 2 ti. Slices were cut from polycrystalline ingots of InP-GaAs, obtalned.~
by synthesis in a two-temperature oven and zon Ie-equalizing, and optically polished
to 10-35 P. Curves of optical density as a function of wavelength are given for
various proportions of the raw materials as well as a derived curve showing the
width of the forbidden band. Deviations of the lattice constant~from a straight
line ;n the direction of compressiongagreed with the deviation of width of the for-'
bidden band from the additive straight line in an increasing direction, and were
proportl6nal thereto inthe first approximation. A table shows the optical trans-
Card 1 /Z

T
1, c6-65
ACCESSION NR: AP04M6
M
ission and wavelength at the edge of the absorption band for various proportions
of the materials, and sample thicknesses. This shows that the forbidden band of
such solid so"utions may be wider than that of the constituent materials when pure,..
and that the solid solution is formed with a negative heat effect. These widths
are in agreement with those obtained by previous workers. Orig. art. hds: I
table and 2 figures.
'tute of Solid
ASSOCIATION: Institut fiziki tverdogo tela I poluprovodnikov (Inst
State and Semiconductor Physics)
SUBMITTE&-.' J2Apr64 ENCL: 00
SUB CODE: SS NO REP SOV: 004 OTHER: 003
Card 2/2

L'2 465-62 FWT(1)/FWG(k)/f;WT(m)/T/EWP(t)/EW(b)/ZWA(h) PZ eb
A~
ACCSSSION NRI AP5001198 5/0250/64/00,8/010/0632106.'Il
AUTHORS- Sirotap No*-N.; MakovaiikaXip L. A.
tc--eonductiv t a ''the width of the -forbiddan~'Zana,.,
TITLEt 5-locar A
salid solution@ of Wium a-gallLu arsenide x*mLc*n4uQt-v
7,
compounds
_v,
-R, 4," 'mo.-A 0,:'19649 632 633, ~;i,
SOURCEs AN BSS Doklady, v4
TOPtC TAGS: semiconductor compbu6nd' 'Ed-rb tdden
9 indium phosphLdles
-'zone width, gallium arsenide.. efictric conductivity solid solut,
.2' compound,, solid solution, com0ound forbidden zone
AS S T RACT i A study has been made'- of: the temperature dependence.,, oi!,,Iih~i~,
'electric conductivity -of InP-GaA's alloy
t -,tempera ture's -from,,-
of
750.C in 4n attempt to determine the.width the. forblade;% z
E'the,tomperature dapdhd6nce ofIntrinsic cdaductL
tho.'basLs .0 V.ty 7",-V4"'.
It was found that*Ln the'
ranj4'.--o&f -tamp eratUre S' f rom t h`j ta E-il L q6
C the" conduct Y:
nitrogen up, to 'about 500
oes it balcome'17i'
ab*va 500-600C d istrtnsic ~Vke vidth f
Card 1/ 3

L 23465-65
ACCESSION N R-: AP5001198
'Zone of InP-GaAs alloys dep,'ends upon. its, composition (s e eF L a'
-the Enclos a
ure); the maxLmum.*wLdth of the zone is observed..,Ln th~
loy with 50-60Z GaAs' content. Thusi, Ln'the quasL-Mnary Inp-m4a.4i
system there is a substantial devLa~ion from the addLtivi'ty `pr'in'~ci
ple in relation to the forbidden zone& which is apparently
ted with a similar deviation in relation to the energy of thc::4q-lLd-_
-OrLg.,art~-.hast 2 f -1 table Eftoi_r`,4
solution lattice. and
Ekov': -BS
L poluprovo d a.' sit
ASSOCIATION t InstLtut f z4k t -AW-
(Institute of Sol id-vS ta t4i~-Pfiy's L co'.4a"d semLoonductors,'AN
1 0
-iENCU
SUfiMITTEDI l5jul64, 01 SUB-c6nt gs"
OTHERt 00
NO REP SOVt 003 4'
C0Fd 2 3
7

L 23465-63

ACCESSION ENCLO
NRs AP5001198 SuRzt- OV .

G44 Mon

Fig. Cqmpo'sitfon dependence of the activ'AL
'67
ede rgy -o the width at the fa biddezl'-zovia.~ in -,Ind:E
n. r
phosphide-gsilium-arsoaide,'allo a

Card 313

L 0
309-61-65 ZPA(S)-2/Z4T(m)/j~?F(n)_2/T/ (t)j~-P( b Dt-io/ lip(
. ........... . .....
J D MJ J G~
ACCESSION NR-. AP5002538 8/0250/64/008/011/0402/(Y704
AUTHOR: Koren', N. N.; Sirota, N. N.
f
TrrLE: Reactive diffustonof cadmium from the vangr
_.,phaso into antimony
SOURCE: AN BSSR. Doklady, v. 8, no. 11, 1964, 702-704
TOPIC TAGS: diffusion layer, single crystal, crystal microstructure, isotropic layer
growth, antimony, cadmium diffusion, cadmium antimonide
ABSTRACT: Results of the Lusion impregnation of antimony single crystals by
cadmium In the vapor phase are presented. Experiments were carried out by a method
previously described by the authors. Heating of the single crystal resulted in the forma-
tion of a close, compact, - single-phase compound layer on the surface of the sample. This
layer consisted of large crystalline grains elongated perpendicular to the surface.
Radiograms of the diffusion layers did not distinguish them from the sample and were
comparable to radiograms of polycrystalline cadmium aatimonide. The average hardness
of the cadmium-antimony system was 210 kg/mm2. A plot of. the square of the measured
layer thickness against time shows a linear dependence for temperatures from 300 to 430C.
To study layer growth, the antimony sample thickness was measured before diffusion,
rd 1/2

MA,

L 0061-65
M
CESSION NR: AP5002538

the diffusion period was timed
and the thickness of the formed layer and of the pure
,
metal remaining was measured. A~ mutual diffusion of both elements was revealed,
cadmium diffusion producing a greater layer thickness. An evaluation of the partial
diffusion coefficient showed that this layer growth limits the interaction of the elements
'OrI
eared to be Isotro
ic
rowth a
art
ha
ound formed
La
th
h th
co
er s:
. -
.
.
e
roug
g,
mp
p
pp
g
y
1 table, 2 figures and 3 formulas.

ASSOCIA fiz
TION*. Institut Ild tverdogo tala'I polirprolvodnikov, AN BEA (Solid body and,
semiconductor physics Institute, AN. Mt)

Od
SUBBUTTED2 ISM64. ENMI 00 SU13 CODE:

No REF SOV.
ON OMER
00
.
.

Co,,d 2/2

ACCESSION NR: AP4030640 S/0048/64/028/004/0666/0668
AUTHOR: Sirota, N.N.-, Varikash, V.M.; Ovseychuk, B.A.
TITLE: Changes in the'intensity of x-ray scattering by triglycine sulfate at the
Curie point ZR-eport, symposium on Ferromagnetism and Ferroelectricity hold in Lenin-
grad 30 May to 5 June 19637
SOURCE: AN SSSR. Izvo Ser,fiz., v.28, no,4, 1964, 666-668
TOPIC TAGS: Triglycine sulfate, triglycine sllfato Curie point anisotropy, trigly-
cine sulfate x-ray reflection
ABSTWICT- The intensity of a number of x-ray reflections from triglycine. sulfate
was measured at temperatures from 00 to 900C. Copper M3 radiation was employed. Af-
ter it was ground to a powder, the sample was annealed for 24 hours at 700C. The
temperature was held constant to within �0.30Q during measurement. Thc intensity of
the reflections was determined from the number of counts recorded J)y i mechanical
counter during the exposure, and also from the area under the cur,;o traced by a re-
cording galvanometor. The intensity of some reflections (including (024).and (344))
decreased monotonheally wilh Iincreasing temperature over the full range investigated.
Card 1/2

7~_
ACCESSION NRs AP4040949 S/0020/64/156/005/1075/1078
AUTHOR: Sirotap 9..N* cede-qcian, AN BMW; Gololabov,, Yoe Me
t TITIZ: Experimental determination of-magnitude-of effective ion charges in A sup
III B sup V compounds by X-ray.data
SOURCEs AN SSR. Doklady*, ve 156,* no 9'* 19649 i675-10`78
TOPIC TAGS: ion chsrg8'.,,effecUYi*-ion charge, solid state physics,, solid state
,.,.circuitry, A sup III B sup V agmpound,, qenido.nductor
ABSTRACT: -The auth6ra attempted an experimental determination of the magnitude
~nd'sign of the effective lon char' -in A III BdV compounds of a sphalerite
structure by X-ray analysis data. The absolute values of'F200 for this type Of
copound were thoroughly defined. The'-experimentally.defined values of the
41tructural amplitudes of the line (200) correspond to a true differenob of the
atcq.scattering factors of the ions in'an A III B V compound under an actually
eXiating degree of ionization...Compounds in this series included AIPp GaP, InP.
~'AIks 0 - GaAs 0 InAs 8 AlSbo' GaSb and'InSb. . The authors found that the t4ird grou
:jelements-metalm-loee electrons and become poottively charged ims 0 The B
elements accept electrons becow* negatively - charged low. nAuthors Axpr a
Card

I

N'JJ.q akadev-:ik., r--I.,. DoRyl.IAN, Ya.G.., prof.. red.;
OLMMOVICH, 11,M., k-and. fiz.-triatem. nauk: red.;
GOLODUSHKO, V.Z., red.
[Chcmi:al bonds in semiconductors mid solids3 Khimicha-
5kaia si-.azl -z w1unrovodnikakh i tverdykh te2akh. Minskp
Nauka i teklnnika, .1965. 366 P. (MIRA 18:7)
1. Akademiya r-avuk BSSR, Kinsk. Institut. fiziki tyerdogo
tala 1. poluiDr-DvAnikov.

till
12' (.10 /!"V!~ N., YA!'4q 61W,bi
C
ACCESSIM iR-. AP5W,8ral S
0250 5 5AM7
AWHOR: Makovetskly, G. I.; 61rota, 17. No
TITISE. qlectiLical conftetiv and thermal emf of m9mganeze selenide
SOUT.Q.E.- AN BSSR. Dolkledy, V. 9, no. 19 1965j, 15-17
N-TOPIC TAGS, manganese compound, electric conductivity, thermal emf poly=
rphic
,..transformation
ABSTPACT: The temperature dependence of electric conductivity and thermal emf of.~
manganese selenide waa investigated in the tempereture range 130 - 8WK for the
erval..
p~x-dose of ctu(tling the traneforration occurring in this temierature int
The measurements 'were made on manganese selexAde7 samples in the form of qylintiers
5,2 mm in dliuneter and 25 - '-,~O mn long, sintered frcm powder in vacw-=. The te,2h..
nc,logy of sample preparation was described earLler (MN BSISR no- 11, 1963)-, The
clectric canducti-ity wes deterndneed by meesurivg the voltage drop across a fixed
section of the sample with a potentlaneter. The thermal emf was measuxed relablve
t~ capper in mccim for both rising eand Wllng temperatures. Plata of ftAe ejoo,~
Card 1/2

LW.,
AcmsioN vR: Anoo6861
tric conductivity,, of the thermal emf,-and-of the-temperature-ccerficient of elec-
tric resistivity against the temperature exhibit several kinks corresponding to 0.
r.olymorphi,~ transformation at 250 - 2701C and two madificationm occurring at 390
and 6oo - 670K. A value of o.68 - 0.70 eV Is deduced for the wilfth of the fdrbid-~
den band of manganese selenidet and a value o.6 e7is obtained for the activa-
tion energy. Orig. art. has: 2 figures.
ASSOCIATION: Institut fiziki tverdogo tela I poluprovodnikov AN B-9SR (Institute
-4 of Solid State and Semiconductor Ptysics, A14 BSSR)
SUEMTUM: 29jul64 ENCL: 00 SUR CME: SS, FA.
IM PEF SOV: 002 OMM: 002
Card 2

-77
L 52234-65 13PR/EW (a) /WTI(1)
Pz-6 IJ (c) RDW/AT/JD
iACCESSION NR: AP5009104 S/0250/65/009/002/0085/0087
37
AUTHOR: Makovetskiy, G. I.; Sirota, N. N.
ITITLE: Electrical conductivity, thermoelectromo';Ive force, and forbidde gap width
of manganes selenide-manganese telluj~lde alfoyjs
1SOURCE: AASSR. Doklady, v. 9, no. 2,1~1165, 85-87
MPIC TAGS: manganese selenide, manganese telluride, thermoelectromotive forceg
!forbidden gap width, electrical conductivity-
!ABSTRACT: The authors investigated the effect of composition and temperature an
,the electric and thermoelectric properties of allMfof the KnSe-MnTe system. The
electriccii, conductivity was Treasured between liquidInitrogen temperatures and 500-
:6000C, and curves showing conductivity (in cr) as a function of temperature (see
'Fig. I of the Enclosure) and as a function of composition at five temperatures from
~150 to 7BOIK (see Fig. 2 of the Enclosure) are given. Values of the forbidden gap
width were obtained from the tangent to the slope for curves of in a= f(T) in the
region of intrinsic conductivity (see F'g. 2 of the Enclosure). The thermo-emf of
:all the alloys was positive. The absolu'Lte values of the thermo-emf and electrical
~conductivity are considered: in alloys of the compositions 0.1 MnSe-0.9 MnTe and
i -Card.

L63825-65 EViT(I)/EWr(m)/EViP(t)/r::'tiP(b.1 I.V (C)
ACCESSION XR: AP5019324 UR/0250/65/0091007/0435/04j~_
AUTHOR: Sirota, N. N.; 14%kovetskaya, L. A.
TITLE: Thermal emf of the solid solutions of indium phosphide and gallium arsenide
SOURCE: AN BSSR. Doklady, v. 9, no. 7, 1965, 435-437
TOPIC TAGS: indium phosphide, gallium arsenide, indiira phosphide alloy, gallium
arsenide containing alloy, alloy thermal electromotive force, thermal emf compoqi.--~'
tion dependence, thermal emf temperature dependence
ABSTRACT: The dependence of the thermal emf on the composition and temperature aft
been investigated in InP, GaAs, and 9 InP
-GsAs alloys with a composition varying
from 0.1 InP.O.9 GaAs to 0.9 InF-O.1 GaAs, and an impurity concentration within
1016
limits of 1-7- -3.0-1019. The thermal emf was measured on polycrystalline n--
and p-specimens in a vacuum or a helium atmosphere in the 120-600K range; the
temperature difference at the hot and cold ends of the specimens was 10-12C.
The
differential thermal emf readings were practically identical during heating or _77Y:;
cooling and increased with increasing temperature,.after passing through. a small.
minimum bel6v room temperature. At all test temperatures, the maximilm value of
20 (where 0 is the specific ele'ctric conduct on- _7
a .ivity) was observed in an alloy c
Ca d J/2

63825-65
ACCESSION NH: AP5019324
taining 30% GaAs; with increasing temperature the value of a2cy increased. The mag-
nitude of the thermal emf (a) below temperatures at which the intrinsic conductivit~~,,,,
'is reached depended mainly on the impurity concentration (n). For example-,.at
In 0.4 InP-0.6 GaAs alloy n = 5.8.1018/cm3, a = -46 pv/deg;in
~T = 300Y
0.7'In.P-q,3 GaAs alloY h = I 7-1018/cm3 'a t! -28o ~v/dp~- the corresponding figures
.0.2 Gd- 0 d 2ih-1017/CM3
for 0.8 fnP AP and 0-.3 InP-O 7 GaAs-weret .-3;h-1- ~-an and
294 and'370 jjv/d6g~.' re:gpecti-~r6ly-; The absolube values of, a and- c in the investigatdd.'.'
InP-G&As system were of the same order as in Oloys of the InP-InAs and-InAs--GaAs
Isystems. Orig. art. hag:, 2 figures and 2 tables.
SS ikov -a' BSSR (Institute
OCIATION:%',Institut.-fiziki.-tverdogo tela i.poluprovodn
A
fSolid State Physics and Semiconductors, AN.BSS 04'
P)
SUBMETTED: 24Apr65 ENCL:--00 SUB CODE: 55 F- P1,
NO REF SOV.-" 003 ATD, PRESS,
Card -2/2

L7924-66 )/EpF(n)
ITCC TrR. AP5027929 SOUR(
Cl Y ~ Y
55
AUTHOR: Sirota N. N.~ Gololobov Ye.
ORG: Institute of Solid State Physics alnA-
/EPA(V--I) _2/CV,JJ'A(m)-2ZgwA(Q JJBC T;,-R/N-r
CODE, UR/0363/65/UU1/U1U/1b.(U/1b5j
-3-
VY1 ~ ,
S~~e , A. U.; Olekhnovich, N. M.
miconductors, Academy of Scienees)BSSR., Minsk
,v Akadernii nau
TITLE: Potential and limitations of the use of x-ray diffraction methods for studying the
nature of chemical bonding in crystals
SOURCE: AN SSSR. Izvestiya. Neorganicheskiye materialy, v. 1, no. 10, 1965, 1673-1683
TOPIC TAGS: x-ray diffraction analysis, neutron diffraction, electr-QrL density, electron
diffraction anarys-is-,-cFe-m-ic-aTWn-di~-g, crystal structure analysis
ABSTRACT: The experimental determination of electron density distribution in crystals in-
volves measurement of the intensities of x-ray scattering peaks, finding of structural
amplitudes, calculation of the form factors of ions, reduction of the values obtained to abso-
lute zero temperature, and summation of three-dimensional Fourier series. Each of these
operations is discussed in detail. X-ray diffraction methods make it possible to give quanti-
tative experimental expressions to the wave functions of electrons in crystal lattices. Of
great significance to the study of chemical bonding is the possibility of estimating the electron
density distribution over the electron shells. For example, the use of form factors obtained by
neutron and x-ray scattering has permitted the determination of the distribution of an elec-
trons, including those with unpaired spins, in the 3d shell in the lattice of ferromagnetics and
UDC: 541.57:548.19

L 7924-66---
ACC NR& AP5027929
antiferromagnetics. However, X-ray-, electron-, and neutron-diffraction methods cannot as
yet solve problems involving electron distribution at low densities or when the density changes
0 3).
are slight (not exceeding 0. 02 - 0. 05 el/A For example, it is not possible at the presents
time to determine by x-ray diffraction the number of electrons which migrate from the
valence band to the conduction band under the influence of thermal motion or photo-electric
effects in semiconductor crystals. Despite such limitations, these methods are of paramount
importance for studying electron density distributions in crystals. Orig. art. has: 7 figures.
SUB CODE: SS, GCO IC SUBM DATE: 05Jul65 ORIG REF: 019 OTH REF: 011
Card

MAKOVETSKrY. G.I.; STROTA, N.N.
Electroconductivl.ty and themc-e.m.f. of manganese selonide.
Dokl. AN BSSR 9 no.lTI5-17 Ja 165. (MTRA 18?10)
1. Institut fiziki tverdogo tela i poluprovodnikov AN BSSR.

12,TROTA N N ~ Mf-.'tWVET'iKAYA, L.-A.
Therm,)- e.a~.f. of ealii solut-Ions of Indiu-m pbosphide and gallium
ar!jariide. Poki. All BSSR 9 no.7e4 5-43? JI 165. (MIRA 18,9)
,3 1
1. Inatitut fIzi-ki- t;;rerdc-go tala i polupruvodnikov AN Pclorusskoy
SSR.

KUT-319 N.14. (Koran, 116VJ; SUMA, U'll. (siratat H.M.]
Klnptlcs of the grmtth of diffuolm lrqers In the a7stem
Moblim*t1m. I'lestAl AN RSSR. 8ar.flz...mat.n&v.n*.2i"
165. (MIRA 1911)

S [ROTA, N.N.; GOLOIDBOV, Ye.M.; SHELEG, A.U.,' DLEKHNOVICH, M.M.
Fosalbilif,lea and limits In the application of X-ray diffraction
r,tudy of the nature of chemical bonds In crystals. Izv,AN SSSR.
Neorg.mat. I no.10:1673-1683 0 165. (KRA 18.-12)
1. Institut f1z1ki tverdogo tela I poluprovodnikov AN BSSR~
Minsk. Submitted July 5,, 1965-

L 18483-66 0WT(1)/EPF(n)-2/ETC(m)-6 IJF(c) GS/AT
ACC NR: AT6006167 SOURCE CCDE: UR/0000/65/000/000/0093/0096
AUTHOR: Sirota, N. N. (Academician AN BSSR);.Golo1~gov,_Ye. M.
ORG: none
TITLE: Heats of atomization and formation of A IIIBvtype compounds determined fr-om~..',
experimental data on electron density distribution 21,
SOURCE: Khimicheskaya svyaz' v poluprovodnikakh i tverdykh telakh (Chemical bond
in semiconductors and solids). Minsk, Nauka i tekhnika, 1965, 93-96
TOPIC TAGS: x ray, electron density, heat of formation, heat of dissociation,
..heat of atomization, heat of sublimation, aluminum compound, gallium compound, in- il
dium compound, arsenic compound, antimony compound
ABSTRACT: The heats of atomization and fomation of AlAs, GaAs, InAs, AlSb, GaSb,
band InSb were calculated from the datrt on electron density distribution determined
;experimentally by x-ray technique. The x-ray measurements were made at 200C and
~-IOOQC. The object of the work was to compare the heats of atomization and forma-
. III v
'tion of A B type compounds determined from x-ray data with data based on the.,
;Card 1/2

L 18483-66
1ACC NR: AT6006167
ed as
:calorimetric technique. The energy of interatomic interaction u was express
~a sum: u = u t ukt ua; where U is a term relating to the coulombic interaction,
C
uk is a term expressing a change in the kinetic energy of electroiis in the area of
III V
;orbital overlapping of A -and B atoms, and ua is a term expressing a change in
ithe exchangeable energy resulting from orbital overlapping. The sum of U + V t
k
V represents the heat of atomization of a compound U . If the heats of subli-
AB
.mation of the individual components of a compound (V and V are known, the heat
A B
.of formation of a compound AH can be determined by the formula:
AH = V -(V + V
AB A B III V
:The heats of atomization and formation for several A B type compounds are pre-
:sented in tabular form. Orig. art, has: 2 figures, 1 table, 8 formulas.
~SUB CODE: -10. SUBM DATE: 31May6S/ ORIG REF: 008/ OTH REr: ool-
Card 2/2j

L - 18836-66 EWT(l) rJP(c) G~/AT
'ACC NR: S,OURCE CODE:~"'tWoooo/65/000/000/0097/0102'
jAUTHOR: Gololobov, Ye. H.; 'Sirota. N. N. (AcademiciaD M.NgRl
none
-zi, 14 v
semiconductor
!'TITLX: Electron density distribution and bonding energies in A, B
'compounds
I
!SOURCE: Khimicheskaya svyazl v poluprovodnikakh i tverdykh telakh (Chemical bond
Jn semiconductors and solids). Minsk, Nauka I tekhnika, 1965, 97-102
!TOPIC TAGSt electron density, semiconductor, aluminum compound, gailiun compound
i,indium compound, arsenic compound, antimony compound, heat of atomization, heat o
formation , Coulomb interaction , chemical bonding
ABSTRACT: The heats of atomization of AlAs, GaAs, InAs, AlSb, GaSb, and TnSb were
~dctarmined on the basis of electron density distribution (f-curves). Three cases
1were considered for calculating the energy of interatomic Interaction u within the
!A IIIBvtype compounds according to equation: U = U + U t U.9 where % is a teru
k
i relating to the Coulombic interaction, uk is a term expressing a change in the
I I

L 18836-66
1-ACC NR: AT6006168
III V
lkinntic energy of electronn In the ore-a of orbital overlapping, of A and B atcmai_
land u In a teni expressing a change in the exchangeable anergy resulting fram or-
i I
!bitalaoverlapping. In the first case the Is determined on -the basis of Thomas-
1 Uk
statistics. In the second more approximate case, in addition to the
lCoii1aribic interaction, the electronic interaction between atm A and ion B in the
.area of orbital interaction for all elements of the orbital overlap was also con-
isidered. The third case is based on a more rigorous involv*ement of V and V' poten-
A B
.tials when considering the uC. energy contributions. The heats of atomization for
,several arsenides and antimonides are given in a table. The corresponding heats of.
formation can be readily computed using the values of heats of sublimation of the _ ,
individual components of a compound (UA and U B). It was found that heats of atomi-
zation and formation of the AIIIBV type compounds, determined on the basis of Olec-
tron density distribution (f-curves), are somewhat less accurate but generally
,very close to the corresponding experimental data. Orig. art. has: 1 figure, 1
11table. 12 formulas.
SUB CODE; 07/ SUBM DATE; 31May65/ ORIG IMF; 004/ OTH REr; ooo
Card 2/2 . vnib

IJPW JDIWWIJWIOSIRM
L 18050-66 UR/oooo/65/000/000/0122/0124
SOURCE CODE:
ACC NR: AT6006169
AN BSSR); Yushkevich, N. N.
AUTHOR: Sirota, N. N. (Academician 70
ORG: none
2Mpertie~lsl f ind .ium antimonideq gallium antimonide, and gal-,
odynamic
TITLE: TLerm
lium _arsenide~,j and
Juprovodnikakh i tverdYkh telakh (Chemical b
Khimicheskaya svyaz' v PO 965, 122-124
.SOURCE: i tekhnika, 1
in semiconductors and solids). Minsk, NaUka
I amic function, indium com-
entropY2 free energy, thermal emfg ther"OdYn arsenic compound,
TOPIC TAGS: imony compound,
pound, gallium arsenide, gallium compoundq ant
enthalpy I
\N3~ gallium
X f formation of indium and
I - -.
ABSTRACT: _atha~l )free energy, and entropy 0 the emf method. The work was
antimonides and gallium arsenide were determined by C properties of semiconductor
part of a systematic investigation of the thernodYnami
lytic cell consisting of:
compounds An electro
III AAs) +
-A 1(yCi LiCl) + chloride Aj(ASb or solid
liquid
.Card 1/2_
n um or gallium, was
n nce of the emf on absolute temperature is graph-
or InSb, GaSb, and GaAs. The thermodynamic data calculated from the tempera-
ture dependence of the emf for InSb at 653-7530K, GaSb at 623-7330K, and GaAs at
673-8230K are also shown. The standard values of enthalpies (-AHO), entropies
WSO), and free energies (-AGO) of formation and atomization for the compounds are
given in table 1. Orig. art. has: 1 figure, 3 tables, 3 formulas.
TABLE I
at
Compound -AH198, kcal/ -AS298, kcal/ -AG298,kcal/ -AH298t 10 0
mol degree x gmol mol kcal/ CD VX we
mol
(n 0 0 0 10
I X 0 1 X
to F
InSb 7.84 4.68 6.44 127.54 64.5 1108.3
GaSb 9.79 1.34 9.39 137.5 64 1 118.4
GaAs 20.96 9.32 18.18 145.96 42:9 1133.17'
SUB CODE: 20/ SUBM DATE, 31May65/ ORIG REF: 004/ OTH REF: 004
Card 2/2

L 18052-66 Ew(m)/9dP(t)/ETc(m).6 IJP(c) JDMIMIGSIRM
ACC NR: AT6006171 SOURCE CODE: UR/0000/65/000/000/0128/0129
AUTHOR: Ye olenko, Ye. N.; Sirota, N. N. (AcademiciaA AN BSSR)
ORG: none
TITLE: Determination of the heats of formation1for indium phosphi and 9211.bum
phosphide by means of combus in a calorimeter 7,7 -Z-7 - 7 , :
SOURCE: Khimicheskaya svyaz' v poluprovodnikakh i tverdykh telakh (Chemical bond
in semiconductors and solids). Minsk, Nauka i tekhnika, 1965, 128-129
TOPIC TAGS: heat of formation, indium compound, gallium compound, calorimeter,
heat measurement
ABSTRACT: The present study was made in view of the lack of reliable data on the
heats of fonnation for InP and GaP. High purity phosphides synthesized by the
Institute of Solid State Physics and Semiconductors of the AN BSSR were burned un-
der pressure of oxygeE-i'ii-t-Ee--ca7io7r-,'iii-Cer-The respective heats of formation ob-
tained in-a series of combustion experiments are: 6H298 = -219.1 1 2.5 kcal/mol for
GaP and AH299 = 21.5 t 1.5 kcal/mol for InP. Orig. art. has: 5 formulas.
SUB CODE: 07/ SUBM DATE: .3lMay65/
ORIG REF: 004/
OTtL REF: 002

L 18051-66 EW(m)ITIwP(t) ijp(c) iDIGS
ACC NR: AT6006170 SOURCE CODE: UR/0000/65/000/000/0125/0127
AUTHOR: Golodushko, V. Z.; Sirota, N. N. (Academician AN BSSR)
ORG: none
TITLE: Dissociation/pressures of indiumllsenide, ~Ium arsenide and gallium.
phosphi
SOURCE: Khimicheskaya svyazl v poluprovodnikakh I tverdykh telakh (Chemical bond
in semiconductors and solids). Minsk, Nauka I tekhnika, 1965, 125-127
TOPIC TAGS: gallium arsenide, gallium compound, indium compound, arsenic compound
'ABSTRACT: Dissociation pressures of indium arsenide, gallium arsenide, and gal-
lium phosphide were determined by Langmuir method using the setup shown in figure
1. Compounds under investigation were evaporated from a cell placed In a crucible
by means of applying a 10 4 mm Hg vacu=. The vapor pressures (p) were calculated
.from the formula:
Card 1/2
p 17,14 M

L 18o5l-66
~ACC NR: AT6006170
where m is the weight of the compound, e is an apperture in the cell containing the'
compound under investigation (in the form of a powder), t is duration of evapora-
tion, a is evaporation coefficient (assurned to be equal to 1), T is temperature in
OK, M is mass spectroscopically determined molecular weight of the vapor. The
Fig. 1. 1--crucible containing the substance un-
der investigation; 2--resistance furnace; 3--
quartz tube; 4--thermocouple.
temperature dependence of the dissociation pres-
sures is graphed. Orig. art. has: 2 figures,
4 formuLm.
SUB CODE: 20,07/
Card 2/2,~W
SUBM DATE: May65/.
ORIG REF: 001/ OTH REF: 007

L 18054-66 E7dr(m)/EWP(J)/EWP(t)/ETCW-6 IJP(c) JDIWWIJWIGSIRM
ACC NR: AT6006173 SOURCE CODE: UR/0000/65/000/000/0142/0145
AUTHOR: Xoren', N. N.; Sirota, N. N. (Academician AN BSSR)
ORG: none
TITLE: Reactive diffusion of antimony and zinc with elements of the VI group and
the energy of the chemical bond 1~j S
SOURCE: Khimicheskaya svyaz' v poluprovodnikakh i tverdykh telakh (Chemical bond
in semiconductors and solids). Minsk, Nauka i tekhnika, 1965, 142-145
TOPIC TAGS: forbidden zone width, crystal growth, antimony, zinc, selenium com-
pound, tellurium compound, sulfur compound, heat of formation, crystal lattice
energy
ABSTRACT., The process of reactive diffusion resulting in the formation of semicon-~
~ductive layers of AIIBVI-' AVBVI, and AIIBV type compounds on metal surfaces was
studied using antimony and zinc with sulfur, selenium, and tellurium and antimony
with zinc and cadmium as model systems. It was found that the mechanism of inter-
.action of zinc with vapor of sulfur, selenium, and tellurium (in which a semicanduc-
Card 1/3

L 18054-66
iACC NR: AT6006173
tor layer forms) involves diffusion of zinc across this layer. A similar mechanism.
of growth of the AVBVI type semiconductor layer was found in the case of the 'inter-
action of antimony with the vapors of sulfur, selenium, and tellurium. In the zinc-
.antimony and cadmium-antimony systems, the growth of the interface layer involves
countercurrent diffusion of both interacting components. The correlation between
the activation energy of diffusion and the melting temperature of various compounds
is graphed. The parameters of the reactive diffusion and the principal physical
characteristics of the semiconductor compounds are shown in table 1. It is conclud-
.ed that the rate of the reactive diffusion is dependent upon the type and the nature
.of interaction between the atoms in the process of compound formation. In general,
.the stronger the interatomic (or interionic) interaction within the crystal lattice,
the greater is the diffusion activation energy and the smaller is the coefficient
,of the reactive diffusion. Orig. art. has: 2 tables.
,Card 2/3

L 18054-66
ACC NR: AT6006173
TABLE 1
Chemical
Canpound Energy of
activation
diffusion,

kcal/mol Preexponen-
tial factor,_
cm2/sec Heat 0
forma-
Ition,94
9 ~
kcal/nIol Lattice
energy,
kcal/

mol rorbidden
zone width,
ev Melting tem-
perature, OK
ZnO 34 6.2-103 63 977 3.2 2248
ZnS 32 1.2.10-2 48 912 3.7 2123
ZnSe 26 8.3.10-4 34 852 2.8 1513
ZnTe 25 1.1.10-4 28 844 2.2 1512
ZnSb 18 (5.2-8.5)-10-5 3.6 - 0.6 819
Sb2S3 18 2.6-10 6 35.7
I - 1.7 819
Sb?.Sej 20 -
3.1-10-b - 1.3 885
Sb2Te3 21 1.3.10 3
28 - 0.3 893
CdSb 11 -7
(2.1-4.2).10 3 - 0.48 699
SUB CODE: 07,20/
Card 3/3,5/;.&/
SUBN DATE: 3lMay65/ ORIG REF: 005/
OTH REF: 001

L 18057-66 M(1)/9-JT(m)/T/EWP(t)/ETC(m)-6 IJP(c) JDAWINIGSIRM
ACC NR: AT6006174 SOURCE CODE: UR/0000/65/000/000/0180/0183
AUTHOR: Rozov, V. V.; Sirota, N. N. (Academician AN BSSR) 19
ORG: none
TITLE: Dynamic dislocation f atoms in the lattices of Indium and gallium phosphides
SOURCE: Khimicheskaya svyaz' v poluprovodnikakh I tverdykh telakh (Chemical bond
in semiconductors and solids). Minsk, Nauka i tekhnika, 1965, 180-183
TOPIC TAGS.: indium compound, gallium compound, crystal lattice dislocation, crys-
tal lattice structure, x ray, heat of formation
1/, 4
ABSTRACT: Characteristic temperatures and dynamic dislocation of atoms in lattices
of indium phosphide, gallium phosphide, and in a solid solution of nP and 14%
GaP were determined an the basis of x-ray analysis. The temperature dependence of
the dynamic dislocations of phosphorus and Ind'ium atoms in indium phosphide expres-
sed in terms of the square of atomic vibration amplitude u2 is graphed. The physi-
d
cal properties of InP, GaP, and the solid solution of 86% InP + 14% GaP at 200C are.
given in table 1. These data Indicate high interaction energy between atoms of GaP
Card 1/2.

- L 18057-66
~ACC NR: AT6006i!4
TABLE 1
3
Compound 44
0
Lattice
-1
fa 41
CIO
parmeter
4J :4 V 41 10
v 0
0 0 04
0 4J 0
0 0

LW 1; .
la .
44 40 13
0
0 44
0 0 or= 4-4
a

cl~'~w V
(D 0 C%J '0 V
3 to
. tj
9
InP 8 lelo-2 120 8.5.10-2 230 5.15-10-6 530 1.25 5.8688
14% GaP
1 4:15-10-2 178 5.45.10-2 280
j 7.94.10-6 650 - 5.7970
GaP 4.10.10-2 240 1.7-10-2 600 5.5.10-6 840 2.24 5.4500
as reflected in high heat of formationIA'alod' high melting temperature. Orig. art.
has: 1 figure, 2 tables, 1 formula.
SUB CODE: 20,07/ SUBM DATE: 3lMay65/ ORIG REF: 001/ OTH REF: 001
Card 2/2_;/)(,

L 18056-66 94T(1)/aIT(m),/ETC(f)/3iG(m)/T/&Wt) IJP(c) RDW/JD/GS/AT
ACC NR: AT6006175 SOURCE CODE: UR/0000/65/000/000/0211/0215
AUTHOR, -Sirota, N. N. (Andemician AN BSSR); Yanovichs V. D.
ORG: none 21, 1 q, S-,