SCIENTIFIC ABSTRACT SHEFTAL, N.N. - SHEFTEL, I.A.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001548930012-8
• Release Decision: RIF
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• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 23, 2000
• Sequence Number: 12
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

AUTHOR: Sheftall, 11. N., Doctor of Geologico-'.1ineralogical 0-11-20/23
_ff c i e prices
TITLE: Third Conference on Monocrystals in Czechoslovakia
(Tretlya konferentsiya po nionokristallam v Chekhoslovakii)
PERIODICAL: Vestnik AN SSSR, 1957, Vol. 27, Nr 11, pp. 133-134 (USSR)
ABSTRACT: At the end of June the above- mentioned conference was held
in Turnov . The papers read during the plenary session and in
the different sections (theoretical and experimental
technology, treatment of crystals, apparatus and equipment)
indicated the high research-level of the Czechoslovak scient-
ists. The works by Ya. Kashpar (on the growth of the carbon-
ate group from calcite to nickel containing carbon dioxide)
were interesting. Some of these crystals are found in nature
as certain minerals - others as isomorphous admixtures or not
at all. Excellent results viere obtained by engineer Ch. Bartu
with regard to the synthesis from the melting process according
to Verneylls method (where he obtained crys tal-products which
surpassed diamonds of purest water without yellowish shades).
Besides he obtained transparent crystals (sheyelite) with a
diameter of up to 20 mm, crystals of scandium-oxide (neltinc-
Card 1/3 temperature 2300 0C) with a length up to 45 mm. Besides

Third Conference on Monocrystals in Czechoslovakia. 30-11-20/23
OLICCeSGfUl experimr.-nta of t1he aynthe2ia according to V rn-
e
eylls method of the crystals C(I"4 with best luminescent pro-
perties. The investigations made by I. Shmid in connection
with the elaboration of existing methods of the crystals ADH
(dehydrophosphate of ammonium), produced from solutions and
Gioluble in 1120, also were of interest. Works were begun on the
production of smallest crystals W03 (I. Ganzlik) from the mel-
ting of the monocrystals 3,5 SiFe (F. Shostak), the crystals
of the amalgam polonium-mercury (I. Kaurzhimskiy and Ye.
Fillchakova). The participants in the conference also thor-
oughly dealt with the apparatus and the equipment of laborat-
ories. The Czechoslovak researchers succeeded in precisely de-
termining the temperature control to 0,10C at 10000C (V. Vani-
chek). Valuable informations was given by 1. Kotlyar regarding
the processing of crystals. I. Sholts reported on data con-
cerning the orientation of crystal-plates with an accuracy to
11 by means of an X-ray spectrograph. Z. Dragonevskiy spoke
on the tests of producing Arensian polarizers, P. Vidner on the
meltin- of technically pure quartz glass and P. Vitak on the
production and processing of quartz fibers. Great interest was
shown for the papers read by the Soviet delegates conc2rning
Card 2/3 the apparatus for the synthesis with excess pressure, the pro-

Third Conference on 1,11oriocrystals in Czechoolovakia.
AVAILABLE:
r,lems of the solubility of
saturation and temperature on.
spiral growth of the crystals and the
5-rowth in the industrial laboratories
Library of Congress
310-11-20123
~1--,-,Uk:-ce of su--er-
G~ t'-e crystalst the
different methods of
of the USSR.
Card 3/3

UTHOR: simPTA 53-2-7/9
-2-L T LE
D.
-Vf~WV."Crystals and Crystallization" ("Kristally i
rlristalliz~-siya", Russian), State Publishing House for Theoretical,
Technical Literature, f.loscow, 1954, 411 Pq 113 roubles.
PERIODICAL: Uspekhi ~iz. Nauk, 1957, Vol 62, Nr 2, PP 187 - 191 (U S.S.R.)
ABSTRACT: N.Sheftal discusses the book "Crystals and Crystallization",
which is a continuation in supplementation of the book by the same
author on "Physics of Solids" published 1937.
The book has 6 chapters:
1
Formation of Crystals
2 Growth and Dissolution of crystals
j
3) Real crystals
4) The part played by surface energy and additions
5~ Allotropy, polymorphosm, isomorphism
0 Artificial crystal breeding.
The reviewer is of the opinion that in this book the experimental
part is more important than the theoretical part, and that the
author brings no new ideas, with the only exception of perhaps
the mechanism of the influence of additions in connection with
crystallization. Theoretical works of the last ten years are
'Card 1/2 nearly completely neglected. The book lacks compactness. In

V.D.KU2XtTSOV- "Crystals and Crystallization".
53-2-7/9
.spite of ce--t-a-i-n deficiencies the book is, however, valuable,
because it is the first of its kind and gives at least a useful
survey of this difficult matter.
ASSOCIATION: Not given
P11LESENTED BY:
SUB-'.'.I1M;D:
AVAILABLE: Library of Congress
Card 2/2

N,
AUTHOR: SHEFTAe N 53-fi-8/9
"i_ '_ -
TITLE: H. 59_e;~"'The Growth of Crystals", 1951,
G.BAKLIt Rost kristallov, Russian).
Translation from the English language by M.A.Kulakov under the
~
Editorship of O.M.Anschelesa and V.A.Frank-Kamenetskogo.
Publishing House for Foreign Literature, Moscow 1954, 406 pp).
PERIODICAL; Uspekhi Piz. Nauk, 1957, Vol 62, Nr 2, pp 191 - 196 (U,S.S.R.)
-%BSTRACT: The book "":he Growth of Crystals" has 12 chapterst
1) Solution, solubility, saturation.
2~ z'rtificial crystal breeding.
3 The theory of crystal growth by Curie.
4) On the so-called velocity of growth.
5) Theory of diffusion.
6) Present theories of growth.
7) Ideal and real crystal.
8) Various types of crystallization.
9) Dissolution.
10) The influence exercised by additions on the shape of crystals.
11) Yhe influence exercised by various materials on crystallization.
12) Peculiar features of crystal growth.
Card 1/2

53-2-8/9
H.BxkW: "The Growth of Crystals"
The reviewer, N.SHEFTALO, says about this book: "The theoretical
side of the growth of crystals is not very clearly described,
and such new developments as the dislocation theory (1949), the
spiral-shaped crystal growth (1950), the molecular kinetic
theory (1950) are disregarded. In view ef these and other
shortcomings BAKLI's book is only of limited value.
AJ~iOCIATD_ 11: Not given
PRESENTED 3Y:
SUBMI'i'TED;
AVAILABLE: Library of Congress
Card 212

A
B/564/57/000/000/019/029
D258
D307 -
/

AUTHORS: Kapralov, K. V.f Koritskiy, Yu. V., and
Sheftall No No
TITLE: First attempts at growing large crystals of
mica

SOURCE: Rost kristallov; doklady na Pervom soveshchanii.
po rostu kristallovq 1956 go Moscowp'Izd_V0
-276
AN SSSR9 19579 273
TMT: The present work was carried out in 1947-1949 in
Laboratoriya slyudyanoy izolyateii Bsesoyuznogo elektro-
teknnicheskogo instituta (Mica Insulation Laboratory of the
All-Union Electrotechnical Institute)v (Kapralov and Koritskiy)v
with consultations from Sheftall of Institut kristallografii
AN SSSR (Crystallography Institute of the AS USSR). In 1947
preliminary fusions with unspecialized apparatus showed that
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Card 1/2

B/564/57/000/000/019/029."
First attempts ... D258/D307
period 1948-1949 was spent in construction of special furnaces#
Small mica crystals containing 16 - 50% of glass were obtained,
frequently in two generations (resulting in crossed crystals)
flourine losses were considerable. A 2-chamber furnace with
tribution was completbd in
closely controlled temperature dis
1949. Charge compositions of N.-40% quarts, 16 - 29% KPI 18
32~6 MgO, and 11,5 - 22% Al,O, Were tried, as well as 71%
natural phlogopite with 29% KF, and a mixture corresponding to
the calculated formula of phlogopi-te. Positive results (crystalsk'-.,~,:,
up to 4 x 2.5 cm) were obtained by placing the crucible in a :'I
KP bath. The optimum conditions.are: charge composition
41.0 S102 , 25.0 MgOv 14.0 A1203, a,nd.20.0% KF; heating to
1400 - 15000C over 2 - 3 hrs, rapid cool;ng ~o 1300 -'12950C,
slow cooling at 3 - 50/hr to 1200 - 1,220 0. Further work is in
~progress at the Crystallogr~Lphy.lnstitute. There are 3 figures,--
Card 2/2

AUTHOR: Sheftall SOV/?0-3-1-1/26
TITLE: ---I~vgeniy Yev6enlyevich Flint (Seventieth Anniversary
of His Birth) (K semidesyatiletiyu so dnya. rozhdeniya)
PERIODICAL: Kristallografiya, 1958, Vol 3, Ur 1, PP 3-4 (USSR)
ABSTRACT: On October 9 the scientific community celebrated in Moscow
the seventieth anniversary of the birth ana the 40th
anniversary of scientific and teaching work of one of the
oldest Soviet crystallographers, Doctor of Geological
Sciences.professor Yevgeniy Yevgenlyevich Flint, who was
a pupil of and successor to Yu.V. Vullf in the department
of crystallography of Moscow University. Most of the
scientific work of Ye.Ye. Flint was concerned with
goniometry (25 papers). He was also concerned with problems
of the accuracy of the laws of geometrical crystallography
(constancy of angles), design and treatment of crystallo-
graphic measurement (stereographic grid) and took part in
the compilation of the fundamp-ntal "Crystal Locator".
Ye.Ye. Flint designed the first Soviet goniometers which
are widely used in the Soviet Union. He has compiled a
catalogue of py2o- and piezo-crystals which includes
almost 1,000 crystals which have or can have piezo- and
Cardl/2 pyro-properties and a catalogue of hard crystals of natural

SOV/?0-3-1-1/26
Y.evgeniy Yevgenlyevich Flint (Seventieth Anniversary of His Birth)
and artificial substances (1-20 crystals). Ye.Ye.Flint
has also produced a number of textbooks and monographs
concerned with crystallography. During the last 40 years
more than 10,000 geologists, now practising in the Soviet
Union, have attended the crystallography course which was
given by Professor Flint, who is a holder of the Order of
Lenin. There is 1 figure.
Card 2/2

25=58=3=26/41
AUTHOR: Sheftall, N.-N., Doctor of Geological and W_iaeralogidul Scitalces
TITLE% Synthesis of Crystals (Sintez kristallov)
25
PERIODICAL: Nauka i ZhiZrl', 1958,ANr 3, pp 5,0-6,A (ussR)
ABSTRACT: A detailed description of various well--known methods of syn-
thesizing crystals is eiven. In this connection2 various
foreign nad Soviet scientints are mentioned, e.g. S.K. Popov,
I.V, Stepanov, M.A. Vasillyeva, F.P. Feofilov, L.M. Belvayev,
B.V. Vitovskiy and G.F. Dobrzhanskiy. Academician A.V. Shub-
nikov laid the foundation in the USSR for research on the
syrithesis of crystals, the importance of which fcr industrial
purposes is increasing year by year.
There are 1-1 sket-ches and one illustration.
AVAILABLE% Library of Congress
Card 1/1 1. Crystals-Synthesi3

SMNIKOV, A.V., akademik, otv.red.; SHEFTALI, N.N., doktor geol.-min.
nauk, otv.red.; A SANDROV, K.S., redAzd-va; POLYAKOVA,
T.V., takhn.red.
(Growth of crystals] Rost kristallov. Moskva. Vol.2. 1959.
238 p. (MIRA 12:5)
1. Akademiya nauk SSSR. Institut krista.1lografti.
(Crystallography)

SHUBNIKOV, A. V.-
Foreword. Rost Icrist. 2:3 159. (MIRA 13:8)
(Cr7stals-Growth)

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'(U014
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AUTHORS: Siavilf"'Va, "e. H., Sher-l'a-1
TITLE: The C.~)nL',_-rcnce oti Cvy~;tal Growth
PERIOD.I.GAL: Kj-1,',tal VO-11 'I, I'll , I , (" 1")
ALSTRACT: The SC'_"_;1ld 1-il 1' ''t (Al 11;41 by
the Cry~3tallu;ic~Lpiilcaj. oc Lhe A,,,idt~-my (A'
ScielicQ'; (.)L, 'kh'.. USSR (111L;LlLu~e krlstalioi~cafii AN
SSSR) In with 1,-!iu Coiuicll on
Crystal FormaLlun ar, the Dlvi~31on of.* Physics and
Matzic-matIcs of the Academy of Sk:iences of the USSR
(Nauchny',, sov; po probleme "Obrazovaniye Kristallov"
pri OFMN AN SSSR), was held in Moscow from March 2`1 to
April 1, 1-959. TiitE~ c~lnference, openQd by Academician
A. V. Shubnikov aiLd participated in by over 600
scientists, discossed -.,b reports, ot' wiiich 12 were
presented by scientists from abroad, from such countries
as Czechoslova~_]La, Hungary, China, Bulgaria, Poland,
Card 1/3

T~ie Second Conference or-, Crystal Growth 76o1 4
SOV/~0-14 -5-30/36
ro T.-z ~;.I
arid East German'l. T~ie subje,-,z~s included tiie
ot metal crystals, cry6 tall 1--a"Llon 11ii imjotls, the
growth ot' phosQiiov~~, oi' piezo-, arid Cerro-
electric, crystals, of ~ieriilconductors, s1licon. germanium,
arid of' a nurribei- ol' otjwi, ci-:Y;~;'Uals, hycirotheri,~Ial syn-
thesis oL' quarto,, und zIn,-- -,;ult'ideL~,
etc Contempovar,; suientiL'Ic c,-,ri-cepts ut' cry.Aal
growth were by a numbc,i, u!' scientiL;ts.
R. Kaishev (BuL.-aria) outlined the ways aloi-q- which
fUtUre theorie ~ ~;houid advaiice 3,-.. the basio 01, new
factors. in order to eotabli.~ii *~hecreti,-~al concepts
that more accurately ret'lecu tiie actual processes Of
crystal growth. The oC methods, the de-
velopment of nevi production equipment, arid new prin-
ciples of cry3tal t,,vjwtii lwei,e the --ubjeclls of a number
of' other report.,-. The. Oecund volume oi' the Symposium
entitled "Cv.,otal Growth" Is ;ciiedule-d to contain the
papers discussing the above topics arid the third
volum,e, the repji-tI--; pre3ented at the Cont'erence. An
Card 211 3

~4(2) SOV/30-59-6-27/40
AUTHOR: Sheftall, ff.-N.p Doctor of Geological and Mineralogical
'ffCj6jj_de7S-
TITLE: Investigations of Crystal Growth(Issledovaniya rosta kristallo~
PERIODICAL: Vestnik Akademii nauk SSSR, 1959P Nr 6p pp 120-121 (USSR)
ABSTRACT: The Second All-Union Conference on the Growth of Crystalo was
held in the Institute of Crystallography between March 23 and
April 1. More than 600 scientists from 24 cities of the Soviet
Union attended this Conference as well as guests from Bulgaria,
Hungary, the GDR, China, Poland and CzechoslovakiyL. 96 reports
were delivered, among them 12 by foreign guests and the follow-
ing discussions were held: on the theories of the crystalgrowth
and the real crystal formation and on the methods of growihg
monocrystals. The investigations of the molecular-kinetic
theory of crystal growth, which is insufficiently dealt with in
the USSR, is regarded as interesting for Soviet scientists. In
the resolution taken by the Conference it was stated that the
extent of the work carried out does not meet the demand of the
country. The Conference dealt also with the problem of the
training of scientific teams which ought to be considerably
Card 1/2 intensified in the field of crystal growth in the Institute of
il~

Investigations of Crystal Growth
SOV/30-59-6-27/40
Crystallography. The edition of Soviet and foreign translated
publications in this field has to be intensified. An apparatus
for the growijlg of monocrystals from solutions and melts ought
to be industrially produced in series. Ll`~'
Card 2/2

KOKORISH, Ye.Yu., SHEFTAL', N.N.
Growth of dislocation-free single crystals of germanium. Kristallo-
grafiia 5 no.1:156-157 Ja-F 16o. (MIRA 13:7)
1. Institut kristallografii AN SSSR.
(Germanium crystals)

-A67
;-)/O?O/E0/0O5/CVO03/OO3
E132/E260
AUTHORS: I Stepanov, 1. 777,Deceased, Vasillyeva, M. A., and
-Shefta1',,.-A-. 11L
TITLE: Obtaining Single CrystalXrom the Melt in Conditions
of Sharply Falling 75mperature
PERIODICAL: Kristallografiya, 1960, Vol 5, Nr 2, PP 334-335 (USSR)
ABSTRACT: The authors earl;--r fqrmulated the problem of growing'
large single crystaigpi-n the following form. "One of
the most important conditions for the growth of a single
crystal is the strict control of the direction a.Td quantity
of the heat flowing to the crucible from the melt and
from the crystal. The whole thermal system must b(--
arranged so that the amount of heat supplied at eacL,.
element of surface limiting the crystallising mass should
compensate its loss, with a certain small excess, except
at the surface of separation of the crystal and the melt
(the growing surface) which should be the place with the
-7reatest heat deficit. In such conditions the -Dossibilit-
of further nucleation is exelLded, Thre regular displace-
ment of the isothermal surface of crystallisat-ion au-rin~-
CaTd 1/3 the growth of the crystal and the convexity of its form

q
~OIS7
S/070/60/00;5/032/003/003
E132/E260
Obtainin-- Single Crystals From the Melt in Conditions of Sharply
U -
Falling Temperature
suporheating of the melt mid the steep temperature drop
across the growing surface of tLe crystal,
ASSOCIATION: Institut 1cristallografii AN SSSR (Institute of
Crystallography, AS USSR)
SUBMITTED: November 25, 1959
'.ard

2 6-6
q
/I C: Y4 C)./o 72/003 /00 A /ooa
B
wt~ -77100 1/ V3) /YS-Y) 011'
AUTHORS: Kokorish, Ye. Yu. and Shefsall, N. N.
TITLE: Dislocations in Semiconductor Crysti~~s
PERIODICAL: Uspekhi fizicheskikh rauk. .960, Vol. 72, No. 3,
pp. 479 - 494
TEXT: The authors have studied the effect. of dislocations upon the
electrical properties of semiconductor crystals '. the formation nl' dLs
locations in -rowing semiconducror crystals, and the action of disloca-
tions upon semiconductor instruments. in the first part, the latt-1-ce
distortion caused by dislocations and the change in the forb--dden band
width connected herewith is discussed.. Furthermore, the spa,-.e charge and
the resulting decrease of barrier mobility, as well as the increas- -1
its scattering and the increase of car-rier recombination are discijssc,~d.
The results obtained by zion-Soviet scientis".s concernIng the re-,'Drrb1na--
tion properties of dislocations, which are fo-rmed in growing zrystals,
are discussed, after which the interaction -.f dislocations wilh impuri_'.y
atoms is described. Thus, it is shown ~'hat the formation of ar ~mpuri-,y
Card 1/5

Dislocations in Semiconductor Crystals O/C.
B019,/Bo,;~6
atmosphere by dislocat-Lons lead.-i do-rease rf th~ effe~-f.,_-e --arrl-r
trapping cross section, and furl 'h,~r, the zmtpurity a~,(:ms nder the sh;ft
of dislocations more difficult. Of "he rvethcd~3 .-,f ~ri~uaiizine
tions, the me tall ograph ic method, the X--ray ineth-~d, and *, h e~ " d. ec oa t i ~nll
me tbod are discussed in detail . For ,he f i rs t--n:,entioned method , the com -
position of etching agents for germanium, silicon, G;-..Si. alloys ana InSb
are given in a table, and the etching te.-hniques are discu3sed. The
X-ray method makes it possible to detertr,~ne the disicD,;ation dens,,ty with-
out destroyirg the specimen. The method --.- 'Ide-oration." by
of copper on dislocaTiors, introduced by Dash'. and obser~.-a-IU4~3n 1.E 1-r1fra.
red li-ht are descrIbed in detail. Pi,,;-e --.auses for tht, on-_-.urrerce -,f
dislocat.--ons in growing ~,.rystals are dis(%ussed 'r, dt~ta_,!: 1) As
quenc.e of plastic deformation.. 2) As a cf a diLi---shapE-r1 a--l-a-
mulation of vacan,~ies in the crystal round th= ---rystallizar-Jon frort.. and
their subsequent destruction under the formar-ion -a dislocat'o- 1
3) As a consequence of imPurtY traPPirg, 4 *) As a r~cjns-quence of the
intergrc.wth of a dislocation from the .n.D:,ulatjor- 5) As a eors,~qu~n7~E,
of fluctuations of the growth rat.a. F-,nally~ ~he r-:~sul's -)f car-ers ar~
Card 2/3

e-6266
Dislocations Lit Crystals
(11SCUssed, which deal with the action of dislocat,ions ,ipon the. harac.
teris~ics of semiconductor i.nstrUMer0.s,, It was fourid that. for ~he. produc
ti-Dn of instruments capable of withstanding a high inverse volta.-o, semi
conductors with the lowest possible ddslocation density must be used.
There are 6 figures, 2 !,ables. and 81 references: 12 Sov'-et, 3 JaPanes~-.~
5 German, 2 British, I Dutch, 1 ltal'~an, and 53 US.
Card 3/3

S/ 137/6 2,/C)Oc)/C)()VC)57/2C) I
C)~'P_/A o1
C'*'C.-"t-.11' 'j.
'-C~ycryst a~ ne sill cor. If"Llms
"T -0, ~ U 329
no. -ibst-ac U
41
(V -Icst T. 3". AN ")SZR, 1961, 351 - 3 56- -
0
-,n zone
i t a t il
:30,7P specIal features of the formation of an as~,ociation
Oaz: fio.~ -;nd to oztobilsh 1-1~e possibilities o~' a better
in
o f i* I; s .T7 e fil I= .,,e T -e procluced Iny a nixt;ure of HO and Si
a quartuz tul e ; -.-.,hereby SJ* tetraciloride precipitated
U ~ 6-
.~-"'.e fc."m of a "'A film cn tne tube and on. the ~;raphite bar placed
o~ cry3-a-`--es m'rln; u V
'2 -e s p tlae film precipitated = the bar, as
U - -
as tl-.e fi* --r. tr_Tc',nesS, varies consLderabl., a.L - the iSrapiite bar. The char-
onLI
.=d de~;ree of the c'--n_-e deper2l or, the temoerature di'st-ributi-on 1-n the reac-
srace. To produce more un-il'crm f'_iI_:i-.s a --,'L.,rnace .,;i_th a fiat temnerature
usen, S--.nce t--e Ic,..ier t,-.e tem-erature -rad4~ert along the -as flow
rd I
/2

C, 2"1,-
e 2m s ".ie s ruc'ure or e I' It is
-s -Inif o, - -- - -L
--'--e -'n - c -stallization zone i S by '--7C- 31300C
he r.
~"!- - -~ - ~ 0- cu-,-~u` n the
e e -,S pc,4.n-- of Sf~; t,,-re'ore,even u 11
s- ' ura* ed Sz vapor
--ilo'-less of -eac ..,-e l-ll-z3-.-,-,~z--,4,jr, (.ut c- a super
L. Ih
-,ate of orystallizat-on Is approximately -~-opo- io-~ial to - e
,-aim r~,te- of Srovrth of crystals is ,-.,i'Uh--*n 1,020 -
-nd 0 EU.,
B. Golovin
---ac-er's note: Co~nplete trans--lationj
CA-d 2/2

S/137/6-2/000/C04/055/201
r52
k o rs 1'. 1.1P
1, 6, 11 Sil ~lcc)n and k;ermanilzm crryst,als
",-'(,-~tivn,!y -,!,,urnal, Mptallur~;iya, no. 4, 1962, 50, abstracL
~V 3b. "Rost -T. Y. mioscov,,, :,N qsn, i%Si,
U, I j 3VDJ 37
DiSCASS., 5C_' - 502)
_-7: T-e eoitaxitie -rowth of Si on Ge and of Ge on Si -e.,as investisated
~:-_ner rne,=a__y. In both cases at a- graduaj. increase of temperature, transitions
:r=. a ra-c-n-,ete absence of Erowth to an unoriented growth and then to an oriented
._~r,-:'I~en ar-d an oriented unbro:,:en rI"-o?.th were obseried. It has Deen found that the
c._' Sf on Ge 'U-a':,-.es place much easier than of Ge on Si. The explanation of
._:lis fact i5 Thai.- the orienting forces of the mother crystal lattice produce in
'4,st case a tvio-sided 'ension and in the second case a two-sided commpression.
Ye. Givar.-izov
.._.bstr_-cter's note: Complete translation]
Card 1/,I

S/137/62/GCO/00-4/053/201
0 1
r?
~T
cj-~, of dislocationless Gc,-=anium sin6le c--. st-I's
,:~--7 7.
no. 4, IC -, 418, abstr!,ct
T. 13,511, 19S I , -~,qh
D*Lscu-ss., 5C`L 502)
,2 =,-17- '11--c: Of-'ect- ot- zo:ne par-,%nieters --,f by C,-,okhral'sl~iy method on
77 a-, f c n sD f s --:~ c at i n i n G e s i r e c,2y s - a s w a s s - u d e As in-Itia'
fic re-
line Ge 4 nGots, pui-i ` -d by zone me-- tl n-,
st-nnce o*),--,,-c-,:-, ,-.-ei~e used. Tl,rie diI.Lmeter of sir.-~!e crystals arced
c ans an' or c*, anSed accordinZ- to t e set
Tl,,~e r~-tc of e.:traction was L, th
M/mi.-. The rot,!~ting speed of the seed crystal !aas 50
f rc-, 0 0 .5 n~
OC. rn t direct`cn o' ~;,r o w -' n -.-;as L dens-;*ty of dislocations ...,as de
-L , T;-e
)j-s ..7
f2 -In ?.1,4-ch detected in the 1111-1. olazie, a-'ter pickling
,,:)7 ution. s sho,...-n tnat the density 3' dislocations
th U I
-ri --qC S-,eecl ani;e of 0.5 n does not depend practically or. t e rate of
r
-s deermined mainly b-,.r thc coolirg conditions of the crystal. At
Care 1/3

-:.714~ 2/'--'C' 0~0!_'.
- , / - Lr//_ I -
a s
e,-,si y of d- s' oca'
h e 6-1
C -F' the eter on t in-
e - u- _.-M ' - I A -,- -he
r, e Tt ; -- - 4 sz-.e
0:3 s suab.~-
Gf I
I ch J
a, I di sloca-tions increa5es
-he cryst-al tul'e densit,~r 0' -e-SiZe
,:Is c, Coolinz of la_~
r '2 a -he
s c=nected ,:J I- s a
e _- we, 1
ndm-~u7es as
r - d f r a 2 s (-)I-, t'ae
C,
2 JI n
Df Cr! s
L
-e rt
-(,-e -Is was detec'~ed. T'
of the
ojay the coo-~In~
'nS f nr-, P
4n~ocr temnrer-~t-re,
ns Ge s cl."s a re to the
t e r"L) e 1' 21VII
iminate consi-cra-e
To el L
.-e de,,Sree of t'ie see
i- ;s necessarY to 'e-at ddi-
n t I, e process - 1 -1 - . -, r-raplaite
o-, (fo-...n very s- ..-j. !."tlpn a specla-
cr,s~a~ and to c0
a7
e the value u..e ax empe-2atture 3-_~dient on
OF "I u
U c screen S used, se Of ~uhe
crys'~~-, '0 de7:*r/C73 the resu"tnZ 4acrea -
-e Of -..;as _u -,Stll S
isloc~~_ -le u,
-cca'.icns to '0 em-2 and lo--sr. D onless sirl-
a
cryst
c.~,,.,ce6 ertractl t', e
1:1 , - ID e4 C-yS'al `:-,,7nersed
..~an "C' cm The ena Df -'-e se a
crys
form. t, e be-Jnnin3 a th,

-2 C.
S/ _137/6VO00/004/051/201
_~,/A0
ce, dL31,)ca-onless sin-le crystals up to 40 g ~,rere prod-,ced.
r n -1 -1 t> .
s a3 c ryst a ls a Smr,,. 11 denr ity o-f d i s loca-1.1 cns
....... *_- ~-.f di i cin lenrth than crystals ~...i4-, a dens ot'
-2 dens",
",:7" an' more. Ge s-inzle crystals ..iith a Smal c,.F* dis-
-s ~:c e o.-c-duced at z,.n,? mel'in- with the ~erine-ature =~dlentf c-f --,7-OC fler
a-
used :=e a-, its rF.-.e c-f disDlacem,~nt of 2 mm/min. 71 is es'abl-;S'-ed '
that
dlsl:~catfcnis in Ge sin-le crystal arise mainly in the T.-)-ccess of its coolinzz
m, ~E;h temoeratures to < 500C and as a partial spreadil-Z from the seed cr-jstal.
B. Turovsl~iy
Abstracter's note; Comolete translation'
C-,.rd 3/33

S103 61/000/003/005/013
13105Y33215
AUTHORSg _Sheftall,_N.N., Doctor of Geological and Mineralogical
Sciences, Soning A.S.
TITLEx Scientific Council for the problem of the
"Formation of Crystals"
PERIODICALg Vestnik Ak-ademii nauk SSSR, no- 3s 1961, 1o6 - 107
TEXTs Two A.11-Union Conferences on the growth of crystals are mentioned
and it is tound that conferences alone do not guarantee progres6 in the
investigation of this field. The Scientific Council therefore decided to
supplement these conferences on the problem of the "formation of crystals*
by symposia with a restricted number of participants and reports. In
1960, three symposia were held in the Institut kristallografii (Institute
of Crystallography) which were attended by representatives of academic in-
stitutes, departmental scientific research institutesq and schools of
nigher education of various cities of the country. The first symposium on
metallic single crystals was held from October 24 to 26, 1960. Some prob-
lems on the growth of single crystals of perfect structures, and specific
Card 1/3

S/030/61/000/003/005/013
Scientific Council for the ... B105~B215
problems on the crystallization kinetics of metallic crystals were dis-
cussed. Characteristics of this symposium were the combination of scien-
tifio and technological reports and useful discussions at a high theoreti-
cal level. The second symposium on piezo- and ferroelectric crystals took
place between November 142 and 189 1960. Problems on the relation between
structure and ferroelectric properties were discussed, and also studies on
new piezo- and ferroelectric crystals which are of great importance for
industrial purposes. The influence of defects on the electrophysical pro-
perties of crystalsp and problems of growth and some properties of para-
magnetic crystals were studied. The third symposium on the growth of se-
miconducting crystals was held on November 28, and 29, 1960. Reports were
given on the most important technological and theoretical problems of grow-
ing single crystals, and on new principles of crystal growth. Some basic
problems of the technique of growth and the production and examination of
-new semiconducting compounds were discussed. The participants of the sym-
posia approved of the initiative of the Scientific Council and emphasized
the aecessity of such systematic meetings of scientists. In futurep 10 to
12 symposia annually are planned to be organized by the department of the
Card '213

S/03 61/000/003/005/013
Scientific Council for the ... B105YB215
Scientific Councilg one third in the Institute of Crvstallography, the
second third in other institutes of the capital, and another third outside
Moscow.
Card 3/3

S/058/62/000/006/059/136
A061/A101
Stepanov, 1, V., Vasil'yeva, M. A., Sheftall, N. N.
Tho effect of the temperature drop magnitude at the crystal - melt
interface on the growth of single crystals. I. Experimental data
FORTODICAL., Referat-ivnyy zhurnal, Fizika, no. 6, 1962, 9, abstract 6E78
(in t-ollection,, "Rost kristallov. T. 3". Moscow, AN SSSR, 1961,
,?39 - 243, Discuss., 501 - 502)
-;.EXT-Q Experimental results of an investigation of the optimum thermal con-
dltionz- of the grovith of single crystals from the melt by Tamman's method are
pr&-Sented. An apparatus with a "mobile thermocouple", ensuring the shift of the
1-rvs+a1lization isotherm in the furnace and permitting the precise control of
~t-rripeiature and crystal growth rate, is described. However, the quality of the
,7-r-Tical single crystals grown in this apparatus is not satisfactory. The Tyndall
f~ffect-. in grown LIP single crystals has been found to be remarkably reduced under
~,r-,nditions of a sharp temperature drop at the crystal - melt interface and of
~~onsAderable overheating (up to 250 C). It is stated on the strength of experi-

-rr,,= effect of tne-
S/058/62/000/006/059/136
A061/AI01
the ~-'-)arp and significant temperature drop at the boundary of the
ci-ystcil as well as the high temperature of the melt, from waich the single
-yv--al is --rovir, are powerful factors acting very markedly on formation and
-j)Z. '--rY:--taj PT'OP"rtjeS.
A. Makarevich
n,:~te,, Complete translation]

30539
ILI It 000
S/564/61/003/000/010/029
D207/D304
AUTJ1ORS-. Kokorish, N. P., and Sheftall, N._N.
TI TLE - Morphology of polycrystalline silicon films
SOURCE - Akademiya nauk SSSR. Institut kristallografii. Rost
kristallov, v. 3, 1961, 351-356
TEXT This and the two following papers describe the author's work
-:arried ouL in 1954 on preparing germanium and silicon films from gas
pbas -~, The present paper deals with the morphology of poly-,- rys tal I in:)
silicon films prepared from gas phase by reducing SiCl 4 with RD; the
pu rpo s t: of the study was to find why electrical properties of these films
ure variablm. A stream of hydrogen, containing SiCl 4 vapor-, was passed
at the rate of 5 cm/sec. through a quartz tube placed in an electrical
resist.aur-e- furnare.' Silicon was deposited in a portion of the quartz
Wbe and on objects placed in it~ To study the mechanism of deposition
of -ilicon a graphite block of 10 x 15 x 150 mm dimensions was placed
C-Ir'l 1/f.

j of.-
Sio rpho log
30539
S/56 YD 61/003/000/010/02(J
D207 304
itisicl" th,; quartz tuije~ rhe block va2 Hornewhat largrvr thiin th(, region
where --'rystallization occurred (this region is known as the crystalliza,-
tion or reaction zone). To make the films more uniform, the temperature
gritdient in the quartz tube was smalls The tempi~rature distribution (T)
1-n tht.- crystallization zone, the variation of the film thickness (A)
A
along the graphite block, and the mean magnitude of crystallites 5 ) of
1hich the film was composed are all given. It was found that. thp film
was very thin at the beginning of the crystallization zone, where it con-
sisted of a very large number of small grains~ Both the film thickness
a-qd the magnitude of single grains inereased along the crystallization
zone in the direction of gas flow. Towards the end of the crystallization
zonc-' the metui size of grains still increased, but the film I;ecame dis-
,~,ontiuuous, Finally, at the end of the zon#-. single or small groups of
large crystallites (up to 200 ~,. in size) were found instead of the films
Sections of the film at right angles to gas flow showed that at the begin-
ning of the crystallization zone the film consisted of several layers of
find, grains~ In the middle of the crystallization zone, the number of
thes-e lavers decreased. Towards the end of the zone. the film consisted
Card 2/3

Morphology of...
30539
S/564/61/003/000/010/029
D207/D304
of a single layers The results obtained are discussed in terms of nuclea-
tion and of crystal growth velocities. It is concluded that portions of
th~ films formed in the middle of the crystallization zone are suitable
for electrical applications because of their single-layer (effectively
monocrystallinp) structure. Elsewhere, the films are either amorphous
or fin,&-grained with intergrain layers (at the beginning of the crystal-
lization zone) or are discontinuous (at the end of the zone). TJnidirec--
tional. laminar flow of gastends to produce films whose properties vary
along their length in the crystallization zone. There are 7 figures and
4 referen.-;es. 2 Soviet-bloc and 2 non-Soviet-bloc. The references to the
English-language publications read as follows& R. P. Ruth, I~ C. Mari-
nare and W, C, Dunlap, J~ Appl. Phys., 319 6, 99&-1006, 1960; 1. B. M.
Journal., no~ 3, 1960.
Card 3/3

30541
1%A Ro
S/564/61/003/000/012/029
D228/D304
AUTHORS: Sbeftall, N. N., and Rokorish, N. P.
TITLE- Reciprocal grafting of crystals of silicon and
germanium
SOURCE; Akademiya nauk SSSR. Institut kristallografiiz Rost
kristallov, v. 3, 1961, 363-370
TEXT: This work is a continuation of previouE research by N. P.
Kokorish (Ref. 6. Sb. Rost kristallor, v. 2, Izd~ AN SSSR, 19599 132-
139) on the epitaxial grafting of Si and Ge crystals. The theory
of epitaxial grafting was developed by P. D. Dankov (Ref. 3., Trud. 2-y
konferentaii po voprosam korrozii, 11, 1219 1943) and later perfected
by G. M. Bliznakov (Ref. 4s Godishn. na Sof~ univ~ Fiz. khim. fak., kn .
2, Rhimiya, ch~ I, 11, 65-719 1956); F. S. Vadilo (Ref. 2, Uchen, zap.
Kurskogo gos, inst., 4, 143, 1957) and L. E. Collins et al ha-7e studied
other aspects of this problem-the grafting of alkali-halide- crystals on
mica and the growth of Ge crystals on halite. Experimental procedure,,
Carl 11/3

30541
S/564/61/003 '/000 012/029
R-ciprocal grafting of- ~228,/D304
Etchpd crystals of Ge and Si, cut along three plar.--s, are respectiNely
coutel. with films of i;rystalline Si and Ge by the method of N~ N~
sh~-ftalt 0! al (Ref. 8.~ Izv~ AN SSSR, ser, fiz., 21, no. 1, 146-152
1957)--the reduction of the corresponding chloride by hydrogC111o (a~ Graf t,
ing of Ge on Sic A 30~k-thick layer of Ge. larg-.:.y consisting of Un-
orient,~A semicrTstalline aggregates, precipita'tes at ~OOOC; oriented
',rTstals appear at 840 0 on (100), (110) and (111) surfaces, but the coat-
ing is patchy and peels off at higher temperatureso (b) Grafting of
Si on Ge, A semicrystalline layer is deposited below 900 0; clase to
th-~ melting-point of Ge (937.20) an oriented crystalline layer is formed
with a thickness of up to 30~k~ the coating is durable and has an n-typa
conductivi ty. The increase in the temperature-and the consequent dtv-
creas- in the supt-rsaturation-is believed to be responsible for the su(;-
I_r;FssiVk- formation of hemi- and holo-cqstalline growths. The absence of
any Ge precipitate on Si above 900 , howeverg may be due to the d=--
c.reas& in the size of the Ge particles separating out in the gas streaml
their deposition is thus impeded, and they are remo-vad from the c--yatal-
lization sphere in the gas stream. The grafting of G-= crystals probably
Card 2/3

30541
S/564/61/003/000/012/029
Reciprocal grafting of... D228/D304
requires a weaker degree of supersaturation than was achieved in these
experiments. The greater ease with which Si accumulates on Ge results
from the operation of bilateral tension-as compared with bilateral com-
pre-gsion in the case of Ge grafting-on the acereti%elayer by the
parent crystal's orienting forces, and so the growth of Si shifts to
the region of its higher supersatu ration. In conclusion, the authors
stress the need to perfect the crystallization method so that a homo-
geneous and continuous coating of Ge may be obtained on Si. There are
7 figures and 9 referencess 6 Soviet-bloc and 3 non-So-Tiet-bloc. The
references to the English-language publications read as follows~ L~ E.
Collins et al, Proc. Phys. Soc.,B,65, 109 3949 823 (1952)1 F. X. Hussion
tt al, J. Phys, Chem., 59, 10761 1955.
Card 3/3

L W109
9',q3oo ~akd lo3-r) 1143)
3-02/32rid
-67T, H OR S - G Sheftal - F. -and Kokorish, N. P,
TITLE- oC coarse-crystall-ne germani-uzn lavers ob-aired
bv, pyr,-)'--;s--,s frcx, the gaseous phase
PERIODICAL: z -- k -a d, o g -) t e I a5, r0 2. IQ6', '-70-572
TEXT! Tr.,-n. f--ne-crysrallne g-rmanium lay,~rs are chara~3terizql by a
very low and ha-~- visually r-typ--~ cond,-c~ivity. A c c o r ri i ng t o
publlshe~ da7h, germani,::n lay~-s wi'~ crys-als of - ',0/,, and more,
sho,~..ld -i-r-n-~ -,n ~h-~ s--zz c' -,he -rys~.&ls and cn mD ur i t i e s w i t h
respec, -r in crder ~,i ch-?~k h9- the aut!iors n-
-h- -
el,
vestigatpd -.h--~ -ec'rc properties of '0 thi.-k germanium layersw
which ha,4. teer vaoo-,zed on q,,,P-r--z backings Y means c.F the sc-called
hydrogen m~*~hod H.vdr,~gqn was cond~icted over 1. iq,.i dGeCI it and later into
a Q,.;ar~z tub,~ hea--j 7~~O )(' ~
le-dUCI took
-~O C h. reacti.on G e C A 2z'
olace n cr.-. and sma-,
Th,~ ox:,-ss - n ~-Iy lrog~ri . 'he hydroge 'or
atmo8phzre, -,.he main
quantities and -x~r= 'ira..n-?; nt)
Card

20109
S 5 0" 1 ""'0 G 3/ C 0 2, " 0 00C.
-rys~si ire
T nv e~
nar- g,?rrrsn-_-:,rr. -ys-allized -)n Q'.7ar-7 ---sides qliarzz, also
pcllisir.~~3 grapr-_-e ba-_rc'.ngs w~-rp ,;Sed All backi-ngs wcre prev-1ously
trlatmient. n the case of crystallization -,JmPs
s,ibjec--?j "'Pa - - - I
of 20 T, n~.~es ~r. laver thicknesses o~' ~-5/z and up to 501A
were produopi The C-_.-I u'sea was spectra-.'-,,., pure The s-:r-octure of -'he
e non -jn, 'he
cr,vstallizA7-.~on zcrit, wa form a-~ -he beg:nning of" the zone I
crys!~als were n- r ' Eirger than ~:L 0 !/L n -.he m, ddl,- part -,0 , and at
the end r~f rhe z.-~n~ -i-Y w-r- ~10-50 /I SeVer"I.1 crys~41S attained up to
200~L T, wa-- ~hzi- -he rF~91-s:iv4-ty of gprman,~zm .ncreases ex-
ponen'iallx ,v;-h :n-:--aSing 311"i c.-_' -hz -rYstal'ites. The lay.?rs
crys'all-_'Z~d gr~lph-..-,e zlic-Aied a d.-~pend,~n-q Of ~he kind of C,_-nduczirl~y
A 1) n W=-e
on the size o' the -rys~-all-qs Crystallizes of !~h--- sizz
of p-typi~ condue-ivi-,yt a- -he :hermc em-," passed from positive to
negative val~i-2s. -and ~be layer, beginn-ing Tit"'I
had n--yp,? r;ondij-~t--v,-y '~a7 r.:~cm :emperature)- The layer s-.ruc-are on
w h th tha, the
graphite was pqual t- -n q-lartz, I -
germanil,,,T, crvs-als on q,jar-z. ndependent of :he size of ~he crystallites,
showed p.-ype Layers 0~' t~icknesn 'I)-20IAk had a _resist-
~'8- -h.M 7M, W--_~_h -.s bv -,)f- magnii-udE hi-~her
Card 21A

20109
C
D 021 B204
la.~ e i's e a t n g o 2 - hr at
1 M 'I :it! f! d -j C t h-st~ Inpqrs to 25 ohm cm- Ex-
o It I I .,,v!, ti r III at Ii m I ~1.,; 1- !3 Co rut d
With
~'or IV pure Chloride
(donor ~in _;b - 4 A Cc e p u 1, o .I: I e -.I Tll- i 11 o d 11 C o rl o F
phosphoris low~-_J b,; thp! -,c-irren,~o of n - t.,y p a c ridun, t v y , w h i C h
was i_ n a! :ind-~pend-n- of ii- s tze of ', h c- (2 r y s t a 1 1 i I e :i : boron was
anal ogo,~ s 1.,; p--..vp= n- n d ; c t -t v 1 Ly - Do-h kinis of impurity
decreasE-d -n: of !-n~ .,)ars-crystalline -co .-6 ohm-cm.
The et'fec~. pr. 1,;cea b,,; -ipon tii,, kind of condiuctivizy was
exactly -i- as -ri th- case- C77 macroscopic monocrlvs~.-.als, The -results
of the S~--jv agr~omen-l Arith the assumot ions made in ielf, a'
concerning -f:.. pvrriv~~s or ger-anllm layers The differenc- in
crysta11_1!,- s_ z~~ in 1-h-. zone --s ex-ciained by the fact that
in the mixt-Jr~ of FC'_ and vapor the ~rvstalliza~-_rzn centers
accompany
whzreby the numbpr of rema~ Js
reduc-4. an4.
-na- is Wny,
n-,1 z i!; e:~ I n
beginn4ng
4.3 W e re
z _n ~c tit- sr.-,al
a 7

20109
Invest
f o 11 cw,? V a - n -1, -? r co n -~ s r a ,i c
n r Ll
I U S rl,:l e.1, d S.-,,,rletl-~,loc ---n,-
n o n -j
.ASSOC -ON ANN S,-.SR ot' Crys-.nlIc-
"a rd

30543
S/56,V61/003/000/015/029
D207/D304
AUTHORS: Kokorish, Ye. Yu., and Sheftall, N. .
TITLE: On the problem of growing germanium monocrystals free
of dislocations
SOURCE: Akademiya nauk SSSR. Institut kristallografii. Rost
kristallov, V. 3, 19619 388-394
TEXT: The authors describe experiments carried out in 1957-58 on
preparing germanium monocrystals free of dislocations. The purpose of
the work was to obtain material from which better semiconductor devices
could be made. A brief discussion of how dislocations are formed is
followed by details of experimental procedure. Folycrystalline ingots
of zone-purified germanium of -'- 30 ohm-cm resistivity were used as the
raw material. Monocrystals were grown by Czochralski's technique of
pulling from the melt in a hydrogen atmosphere, The rate of pulling was
varied from 0.5 to 4 mm1min. A seed crystal 'was rotated at 50 - 100 rpm.
Card 1 /' '

30 5, L.;
On the problem of...
S/504/61/003/000/'015/029
D207ZD304
The melt was contained in an electrically-heated graphite crucible. Mono-
~rystals were grown mainly along the [1113 direction. Dislocation densi-
0
ties were found by etching (111) faces in a potassium ferricyanids- solu-
Li on, It was found that the density of dislocations was least in the
middl,3 portions of grown monocrystals. Increase in the rate of pulling,
especially above 4 mm/min., and increase of the transverse cross-section
of grown monocrystals both increased the dislocation density, The crys-
tallographic orientation of a seed crystal did not- greatly affect the
number of dislocations. Dislocations were formed by thermal stresses
(thermal shock and steep temperature gradients) which ware produced by
rapid cooling, another mechanism of dislocation formation was by growth
of dislocations from the seed crystals Using the knowledgc- gained in
thE~s4a experiments. the authors were able to grow pure and Sb- or Ga-
dopc-d germanium monocrystals which were pratAically free of disloca-Lion!i~
M
(10 cm-2 or less). Acknowledgments are made to V~ K~ Bichev and E. V.
Alyakinenkova for their help in experiments,, There are 6 figures, 2
tables and 15 references. 3 Soviet-bloc and 12 non-Soviet~bloc. The 4
Card 2/3

301543
On the problem of...
S/564/61/003/000/015/029
D207/D304
most recent references to the English-language publications read as
followsx W. C. Dash, J. Appl. Phys., 29,736, 1958; P. Penning, Philips
Res. Repts, 13, 79, 1958; F. D. Rosi, RCA Rev~, 19, 3,199 1958; J. G.
Gressel, J. A. Powell, Progress in Semiconductors, 11, 137, London, 1957.
x .
Card 3/3

SAC58/62/000/004/0,95/160
AGO'!/AIOI
e f t a 1 IN,
3
h
17- Probl-em, of real cr"jsta! fornation. I!
aeferativr,~-y z-Urnal, Fizika, no. 2-1. 1962, 11, abstract 4E911 (Sb.
"Rcst 'cri-stallov. T. 3'". Moscow, AN SSSR, 1961. 9-21, Liscuss.
:,roblems of -crystal forma,ion are considered. It is noted that the
-_Iationshiz bet,..-een the h1o,-,ogeneity.:bf. the internal structure and the simplicity
the e-zernal crystal shaz)e is than had formerly been supposed.
of the perfect seed crystal in the production of high-quality
ct of the ambient temperat re on the crystal shape
I Ys als is s'-o,..;n. The e~r U UU
C _Ze
if-, ~!onsi,-Iered. The enterinZ of impurities into the growing crystal and the r6le
,of 2,~-ystallizatIcn pressure in self-purification process are thoroughly investi-
:7-ted. The conclusion ~~.,hlch is imDo-tant for the breading practice is, that a
self-Puri f--* cation effect 4-z necessarily observed when the c-rjstallization
-'sother:n '-as a flat shape, and when this isother-i corresponds to faces of the
-brJum shape. An experimental test showed th-s conclusJon to be correct.
Car" 1/2

"roble.r.-, of real crjstal forTnation. !I A0061/Aloi
I t 4- z -i c te~' t'-at t,e conditions of formation of the most perfect cnjs'Uals should
I
'-e ~h-se four,' 4n crystallization from the gaseous phase. There are 29 references.
~Iar-, 1see -OnFi z. 1-958. no. 4, 83-3) 1
Ye. Givargizov
bs~rac-.erls noe: Complete trazqsla~ionl
6 U
C a r d 2

3,""179
Ao61/AlOI
,",=HCRS: Ho'-oris'n, Ye. Yu., Shef -,a!', N. N.
a' t-e srowl-h o~ dislocation-free germanium single crystals
U
P E~, ! C Roferativnyy zhurnal, Fizika, no. 4, 1962, 20, abstract lirE236
(V sb."Rost kristallov. T. 3". Mcscow, AN SSSR, 1961,
Discuss- 501-502)
-als
~T: it is Ghown that the density of dislocations in Ge single crys~
from ame! t In the usual mix-mer is minimum in their central part. The
effect of the rate of of tlie cr"jstuall transverse dimnensions and of the
crvstal orientation along (111) . (110) , and (100) on the for-mation of
,-~izlocaticnzq in Ge s-Ingle crystals was investi.mated. Dislocations were ch-Lefly
0,
-n "c single crys~ais cooled from, high temperattires to below 500
L; U
-ormal s',-Ioc',: and h--'gh temj~crature gradients in the crystal. were found to be the
Dislocation-free Ge single
...ain causes of the IF'ornation of dislocations.
c.-ryszals, both high-ohmic and low-ohmic, alloyed with Sb or Ga were obtained.
'-stracter's note: Complete translation]
Card 1/1.

L 18450-63 EWP(q)/EWr(1)/EW(ra)/BDS AFFTcASD/ESD 31 jp
ACCESSION NR: AT3001891 S /Z9-lZMW00/j0Y0jg0fiq/00 10
AUTHOR : Sheftall, N. N., Deputy Chairman, Scientific Council on the Problem
of"Yormation ot urystals"
TITLE: Statement of the Scientific Council on the Problem of "Formation of
Crystals."
SOURCX: Kris tallizatsiya i fazovy *ye perekhody'. Minsk, Izd-vo AN BSSR, 196Z, 9-10.
TOPIC TAGS: crystal, crystallization, crystallography, growth, formation,
g:rowing, monocrystal, single crystal, single
ABSTRACT: Soviet science must occupy a leading world position both in the theory
and in the practice of the growing of crystalr,. We need, according to A. V. Shubni-
kov's expression, a theory that can hel
p us KCVO grow more single crystals-T..,hus
far only first steps have been rnade. The Minsk meeting has broug _e
er
theoretical investigators of borh the older and the younger generation, theoreticians
as well as experimenters. Theoretical clarifications set forth there should urge
the experimenters on to perform more and more accurate experiments that will
provide dependable material for the development of further aavanced theoretical
concepts. The Scientific Council hopes that this meeting will lead to systematic
Card 1/?

L 18450-63
ACCESSION NR: AT3001891
and possibly annual meetings on the theory of the growth of crystals, as well as to
symposia on more specialized theoretical problems. We propose Minsk as the
annual meeting place. Five years ago thg Institute of Crystallography held a
meeting on the growing of crystals which, we believe, was extremely productive.
This work has now been continued by the Scientific Council on the Problem "For-
mation of Crystals." We now stand on the threshold of a third phase. -The State
Council for the Coordination of Scient.ific Work has meanwhile been -founded. The
Academy of Sciencc,.s.,__U,,.S.SR. has been entrusted with the guidance of a number of
problems. Our problem, one of the -aspects of the greater proolern of solid-state
physics, lies within that scope. Closer coordination and unity in work on this prob-
lem will no doubt result from this step. We must hope that all of this will help the
development and theoretical advances in the sector of the formation of crystals.
Orig. art. has no tables, figure3, or forriulas.
ASSOCIATION: Na-uchnyy sovet po probleme 110brazovaniy kristallov" (Scientific
Council on the Problem of "Tormation of Cr-ystals")
SUBMITTED: none DATE ACQ: 16Apr63
SUB CODE
CH, PH, MA NO REF SOV: 000
ENCL: 00
OTHER: 000
Card 2/ 2

(11VARGIZOV, Ye.l.; SHEFTALI.-MI.
Decorating of a growing crystal surface. Dqkl. AN 3_5SR 150 no.j:
85--88 %V 163. (AURA 16:6)
1. Institut kristallografii All SSSR. Predstavleno akademikom N.V.
BelovyTa. -
(Crystals-Growth)

SFIEFTALI, N.N... doktor geologo-mineralog.nauk
Growing of single crystals and technical progress (to be continued).
Priroda 53 no.3:19-26 164. (MIRA 17:4)
1. Institut kristallografii AN SSSR, Moskva.

SHEFTALI. N.N doktor geologo-mineralogicheskikh nauk;
SIIJAVN 6h, Ye.N.
I
Exchange of experience gained in studies on crystal growth.
Rost krist. 4:245-246 164. (MIRA 17-8)
1. Otvatstvennyy redaktor 6bornika "Rest la-istallov" (for
Sheftall).

SHEFTALIV N.N., doktor geologo-mineralogichaskikh nauk
Determination of symmetz7. Rost krist. 4t22-1-229 164.
Physical meaning of synmetry. Ibid.s230-244 164.
(MIRA 1?.-8)
1. Otvetstvennyy redaktor sbornika "Rost kristallov".

SHEFrALI, N.N., doktor geol.-minaral.nailk-
Growing of single crystals and the technological progress. Priroda 53
no.4:42-52 164. (MIRA 17-4)
1, Institut kristallografii MI SSSR, Moskva.

SHEFT.A-T I, N.N., doktor geologo-m-ine:-alo.-icheskikli nauk;
GAVRILOVA, I.V.
Equilibrium sl--oe of crysLals allowing for volume free energy
Rost krist. Z.32-35 164. (NIRA 17:8~
1. Otvetstvennyy redaktor sbarnika "Rost kristallov" for
Sheftal').

ACCESSION NR: AT4040551 S/2564/64/004/000/0015/0021
AUTHOR: Sheftal', N. N.; Givargizov, Ye. I.; Spitsy*n, B. V.; Kevorkov, A. M.
TITLE: Growth of epitaxial germanium films f20n. supercooled droplets
SOURCE: AN SSSR. Institut kristallografii. Rost kristallov, v. 4, 1964, 15-21
TOPIC TAGS: germanium, germanium crystal, crystal growth, germanium film, epitaxial
film, epitaxial germanium film, supercooled droplet, germanium monocrystal, gas phase
ervstallization, germanium tetrachloride, crystallography
iWSTRACT: In a study of the peculiarities of "high-temperature" crystallization of germaniuffi
from the gaseous phase during reduction Of GeC14 by hydrogen, (111),' (110) and (100)-
oriented monocrystalline germanium plates were ground, chemically polished (HF and HNO,3)
washed with deionized water and dried. After preheating in a flow of dry hydrogen at 970C
to remove surface oxides, the plates were grown for about 10-20 min. at 740-870C in the
,apparatus previously described. The new 5-10 micron layer was then examined with an
optical and electron microscope. These examinations showed that the crystal growth resulted
from deposition of very small droplets of supercooled germanium on the surface. The
Card 1/2

;ACCESSION NR: AT4040551
phonomonon is discussed in detail and is given a theoretical explanation. An energy diagram
characLorizing the trwisformation is plotted which shows the two possible transformation
patterns: (1) formation of free germanium atoms from the chemical compound with their
subsequent condensation, and (2) decomposition of molecules of the initial compound directly
on the surface of the condensed phase. "The authors extend their gratitude to Candidate in the
Physical-Alathematical Sciences S. A. Semiletov for preparing the electronogrgin, -and to:
IM. V. Gavriiova for the electron- m ic rophotograph s. 11 Orig. art. has: 8 figures.
ASSOCIATION: Institut kristallografti, AN SSSR (Institute of Crystallography, AN SSSR)
SUBMITTED: 00 DATE ACQ: 02JuIG4 ENCL: 00
SUB CODE: IC, EC NO REF SOV: 004 OTHER: 003
C,,d 2/2

88-36
:~:k!5 EWT(m)/EW(q)/EWP(b) IJP(c)As(mp)-2/ESD(dp)/w(gs)/s~b/Es'Dt't)/_
AT_C:"ii N S/00.70/64/009/005/0686/0689'.
10
'JAUTHORS: Sheftal'. N. N.; Givargizov, Ye. I
------------------
TITLE: Dependence of the rate of growth of., single crystal_layers of
~qernianium on the orientation of the substrate and on the conditions
-"of crystallization in the gaseous phase
ISOURCE: Kr"istallografiya, v. 9,"no. 5, 1964, 686-689
iTOPIC TAGS: crystal growth, single crystali germanium, thin film,
c stallization ""Y
ry
iABSTRACT: The rate of growth of single-crystal 4ermanium layerg,on
;substrates parallel to the (111), 1(110), and '(100) faces was inves-
itigated as a function of the conditionslof.the crystallization due
!to the decomposition of GeC1 in a st Iream .of hydrogen.~ The crystal-
4
;lization setup waadescribed earlier (GivargAzove Fiz*- tv.ztela
v. 5, 1150,.- ItI63). The. experiments were'carrLed Pt65G--720C. 'The
,tCard

it
L 8886-65
!ACCESSION NR: AP4046046

p-rallel with-
Imorphology of the'gkown crystals was investigated ia C& 4
;the measureinents of the growth rate._~Plotsvere obtained for the
tdependence bf the rate of 6 ro,4th on
rystal g the partial pressure. of~
ithe Gecl vapor in the initial mixturb-at fixed-values of.the
4 sub-
istrate terni3brature and of gas flow. Plots were'also obtained fdr
Ithe dependdfice of the rate of.gr6wth b f the Gecrystal on the par-
tial press;jre of the GeCl vapor'in tl~e initialmixture at-several
4
Aemperatures. The growth rate was found to depend on.the substrate
lorientation, with the (111) orientation being.quite.~ifferent from
Ithe (110) and (100) orientations. Thig-difference in the behavior---
of the subsitrates is attributed to a difference in the nu~er of
Ifirst-, second-, and tbird-,order,.nearebt.neigbbors-. hThe-authors
thank A. N.f'Stepanova, A. M. Kev6ikov~' - i~d 'L.: 19. dbolsn8ka~ a.*
_y to
help i;1-th the e-~periment=-all."--w--or--lk--.-w-'O'r-ig:.: -art. hasr 3figu r-es-. r-
ASSOCIAT1014.1 Institut kristall 'iaf ii. AN SSSR (institute of Crys--
09
4
'tallogr!!pbyfAN SSSR)

_L__LL~ _A

a I.
- .- - I .. ~, 1 .1 11, 1 1 ~ -1-,-~'~~-,,!.. .- .1,.,,, i I-.
I -- - I .
I -- -` - . -
.~i ... - - --I--- I----- --w .: - _, , : ~
-i - _ - .

L 19641-65 EEC (b)-2/-z-vlT(!)/EWT(m)/E'.iP(b)IT/E!iP(t) IJP(c)/RAEM(-a)/AFWL/AgD(a)-'5/
A7=1=7 NR; AP5000292 S.9D/RSD(dp)/PN3T,,0* 10070/64/oog/006/0902/0909
AUTHOR: Magomedov, Kh. A.; Sh e ft al N .
TITLE: Growth mechanism of gallium arsenide Epitaxial layers
SOURCE: Kristallografiya, v. 9, no. 6, 19641 902-909
TOFIC~ TAGS: gallium arsenide semiconductor, epitaxial film, single
.crystal film, polycrystalline film,, epitaxial growth, chemical trans.-
port, reaction, epitaxial film morphology
ABSTRACT: The epitaxial deposition rate of GaAs and growth habits of
GaAs thin films on a GaAs single-crystal substrate have been studied,
in a vertical oDen-tube system. The epitaxial deposition was.carried,
out by the chemical transport reaction using iodine vapors. The study
was pro.,,.pted by the increasing application of G&As~epitaxial films in
the construction of solid-state devices (transistors, diodes,-tunnel
diodes, electroluminescent. lamps', lasers). The effect of variable
growth parameters - temperature of the substrate and the source,.
iodine partial pressure, carrier-gas (hydrogen) flow rate -~- were
studied to clarify the mechanism of the.growth of GaAs thin films.
Card 1/3

L .19641-6.5
ACCESSION NR: AP5000292
Experiments were carried out in a three-zone furnace with individual
temperature control in each zone. The source (in zone 2) was n-type
GaAs single crystals. The substrate (in zone 3) was chemically etched,,
weighed, and gas etched in an iodine vapor stream. The epitaxial,
films had the same conductivity type and resistivity as the source.
Microinterferometric, micrographic, and electronographic investiga-
tions indicated that the deposition rate and morphology of epitaxial
films on (111) A and (111) B planes depend mainly on substrate tem-
perature (in the 550-700C range), iodine partial pressure (in the
0.7-8.2 mm. Hg range), and hydrogen flow rate nearthe source (in the,
5---~30 cm/sec range). Optimum conditions were 611 stablished for a single-
crys tal deposit on the (111) plane,.without geometrical surface pa_t-'~L,;
terns. Polycrystalline layers were observed-on both planes of the
substrate at certain tem-oeratures and at iodine partial pressure.
Various geometrical patterns including twins were ailways.present on
B surfaces. The maximum deposition rate was.90 ij/hr on the
(111.) A plane. Orig, art. has: 8'figures and 2 formulas.
ASSOCIATION: Institut kristallografii AN SSSR (Institute of Crys-'
tallography, AN SSSR)
Card 2/3

L 16572;�1,5 VWT(m)/EWP(t)/EWP(b) ESD(t)/RAr,14(c)/ESD(gs)/SSD/AFn/i~SD(a)-5/
2 / I J Pc JD
ACCESSION NR: AP5000299
S/0070/64/009/006/0933/0937
AUTHORS: GivaFSLzo,!,_ Ye, _I.; Sheftal', N. N.
TITLE: On different forms of stacking faults in grown layers,of
germanium
SOURCE: Kristallografiya, v. 9, no. 6, 1964, 933-937
TOPIC TAGSt germanmum cryntal growth, stacking fault, crystal
lattice defect
ABSTRACT: The authors investigated experimentally the laws govern-
ing the formation of different types of defects in germanium layers
with orientations (111) and (100), grown by-reduction of germanium
tetrachloride in a stream of hydrogen. iere~
The investigations w
made in a dark field of a metallographic microscope.with interfer-
ence contrast. The variation of -the shape of the defects with depth
of the grown layer was investigated by successive et6hing.,A, cer-
Card 1/2

ACCESSION NR: AP5000299
tain regularity was observed in the appearance of some of the de-
fects, especially "single" lines, namely that when the orientation
of the layer deviates from that of the ideal (111) plane the lines
are always parallel to the shortest sides of the original triangular,
defect. A method of checking on this regularity is briefly described.
Other stacking faults and jogsare discussed. ."The authors thank.
V. 1. Muratova and L. N. Obolenskaya for help with the experiments."
Orig. art. has: 8 figures.
ASSOCIATION: Institut kristallografli AN'SSSR (Institute of Crys-
tallography AN SSSR)
SUBMITTED: 15Apr64 ENCL: 00
SUB CODE: SS NR REF SOV: 002 OT"R: 006
Card 2/2

S H E' RTIAL fl. 11 doktor geol. -miner. naul-,, red.; 1JI-EKSEYIV,
refi.
[Crystallization from the gaseous phase) Kristallizatsiia
jz gpizovoi fazy. ',,Ioskva, Izd-vo Illir," 1965. 344 p.
(~Il :t'l is: 5)

L 54B3M5 EWT W/Srr W/Dip (j)/FPF (n)-2/EPR/T/FdP (1,)Ij .EEC (b) -2/&IP (b)/JEWA PS -'44
J065;
WCC'ESSION NR:' AP5015019 510
M,
AUTMR: Sheftallf N. H.1 Gorbunoval K*
TITLF: Problems of the growth and preparation of single crystalsZ, Third Conforevy 0.
rystal growth
on c
SOURCE: Zhurnal neorganicheskoy khimiiq v. 109 no* 6!~4-,,1965, 1510
TOPIC ViGS: solid state physics conference., tal growth
ABSTRACT* Th Third Conference on Crystal Growth was'h 1d
loc_ s,cientis e in- November -1963
0u 60 So
in out 860--goaet-b ts presented 150 paperswhich
-will e pub?sAhed itn8'1965 as Volumes 5 and 6 of the-collection Rost Ki;istiziz6z~'-
(Crystal GrowtIA Volugie.5, entitled Growth and peirfection of single crystals
-the crystallization mediwn, contains papers on the heor'y of crystal growth,
mechanism of the formation of single c
the lepitaxial .growth, .liquid
rystals,
state,, liquid crystals, the effects of tem erature, pH,~ and radiation on the
P
morphology and homogeneity of.crystals, and studies of -the degree of crystal,
perfection by various physical methods. The names of the authors, aie
ed Way
~given., . -Volume .6, ti 8 ofp~~p~~ ideal sin4le etate, include
s

~ I

Mti'= A136001227 (A) S OURCE CODE:' UR/0363/65/001/012/2113/2119 4
AUTHOR: Magomedov, Kh. A. - Sheftall, N. N.
ORG: Institute of Crystallography, AcadeMy of Sciences SSSR (Institut kristallografit Akac
.nauk SR)
TITLE: Mechanism of growth and defects of epitaxial gallium arsenide films
SOURCE: AN SSSR. Izveattya. Neorgantcheskiye materfaly, v. 1. no. 12, 1965. 2113-2119
TOPIC TAGS: epitaxial growing, gallium arsenide, crystal defect
ABSTRACT: The effect of mainly two factors, the crystallization temperature in the 550 -
850C temperature range and partial pressure of iodine In the 0. 6 - 8 mm. Hg pressure range,
on the perfection of GaAs epitaxial films was Investigated. At 640 - 650C pacidng defects
in the form of equilateral triangles, isosceles trapezoids, and single lines are formed on
surface A (111). Sometimes growth pits also appear. At higher tempe tu f the deposi-
tion zone (700 - 850C), only growth pits In the form of trigonal, ditrig=,rje
: trun-
cated, and complete pyramids are formed. The formation of stacking faults growth pits
is due to the presence of oxide islets of fl-Ga.203 on the substrates. No gr5irth pits or stacking
faults are formed on surface B (111), but penetration twins appvar at low temperatures (640C)
and truncated and complete pyramids are formed at 700 - 7 bi,)C. When the GaAs sottroe is at
1000C and the substrates at 640C, the Iodine partial pressure Is 2.26 x 10-3 min Hg and the
546.681

ACC NR, AP6001227
flow rate Is 5 cm/sec, no growth figures whatever form on surface A (111) if the surface of
the substrate is subjected to annealing and gas etching prior to the growing. Authors thank Yu.
N. Yarmukhamedov for assistance In the microscopic study and In obtaining photomicrograp&-
of the film. Orig. art. has: 5 figures and I formula.
SUB CODE: 11, 20 / SUBM DATE: 31May65 / ORIG REF- 002 OTH REF: 016

L 1596846 EWT(xq)1TLW t)/Wp
jp(c) jp1jG
A~
ACC NR: AT6002273 SOURCE CODE- UR/2564/65/006/000/78/0392
AUTHOR: Magomedov, Kh. A.; Sheftall, N. N.
ORG: none
TITLE: Growing of epitaxial gallium arsenide films. (Paper presented at the Third
nce on Crystal __F
Confere Growing en idMoscow from 18 to 25 November, 1963.y-
SOURCE: AN SSSR. Institut kristallografti. Rost kristallov, v. 6, 1965, 388-392
TOPIC TAGS- ePitaxial' growing, gallium arsenide
ABSTRACT: The article describes the apparatus and method developed for preparing
epitwdal gallium arsenide films by the open hydrogen-iodide method. In this method,a
stream of hydrogen carries iodine vapor, which encounters g.-Mum arsenide in the high-
temperature zone and reacts as follows:
2GaAs + J,=: 2G*RJ + !As,,.
2
The reaction products are carried to a cooler zone, where the second reaction occurs on
the surface of a substrate:
'2GaAs + GA
kJ -4- 3GaJ +)64
Cirdj/2~.--~-

VA, I.
rp i
f fra c or,
I I ''I
L'Lr-Ap c)5
AN SSSR.

L 12032-66 EWP(e)/EWT(m)/SWP(t)/EWP(b) IJP(C) JDtWH
ACV' NAM 05021671 SOURGS CODSt U44/'OQSO/65/038/'00.3/"1863/1866
AUT110R& Ryabova, Ls A.; Savitskayap
Ya. Ao Sheftalf) q* No
7R
iOAG & none
F:
Title: Pro4uction an4 structure of Injium, oxide films.
al V
SOURCE: Zhurnal prikladnoy kulmlij v. )8j no. 8, 1965' 1863-1866
TOPIC TAGSs metal film, in-lium compoun-1, crystRI structures tantalumv nicknlp
quartz, molybdenum .7,lass Q-1-1
ABSTR.-NG-L: TL-in (0.06 - 1,p) In2O3 films were ?44 4 vnrlous substrates
(tantalum, nickels %juar-tag ani moly inum gjaM 3mal 19cwmposition of
051i702),iln-vaporw The dielectric layers of In2O Inai a resistivity of -%aol2 o,,
cm. T6is was mucu %J-, qr tlan tie resistivity opthe In2
0 films (103 - 106 onm ca)
obtainei by ot%-ir met%ods i vaporization of In in a WPM= ?d -1,1~ subsequent 6x1dation,,4--
or by 1-ydrolysis of cl4lorides. The temperature of film formation depended on t%e
composition of t%e SuVetrate.- It was 300C on quartz ani glass# 40OG Qn nickels
and 650C on tantilin,' %%.a 300C temperattre was also optimum for t%e formation of 11*,----~~
-UMS--33-9423

L 12032-66
ACC NR: AP5021671,
I'higlh-resistivity films (1010 - 10 12 ol~m cm) on quartz and glass, Films wit% lower
resistivity were formed on corresponAing*substrates at temperatures'%4g%er t%an
indicated above. Electron diffraction p%,a,4e analysis ssowe4 t%at t%e production
of tI -r--resistivity 'films w4s ralatei to cuan gegp in t%e film structure affected by
tue temperature. T,,e filmsViepositid on Saarteat'3800 anti on glass at 350C %,ad -I
I an amorplous structure blurrea rings in tue glectron diffraction picture) Rnd %ig%j
resistivity. INs filmal formed on glass at 400G -ad more distinct rings in t%eir
electron diffraction klotureso TI-is inlicateil a greater ordbring of t%e structures
wlidh evidently affected t%gj decrease in resistivity; Films of t%e required
resistivity could Vus be produced by selection of the proper deposition tmpftlabx%
Howeverj, there was a t4res%%614 temperature above t%e films became contemInsted
wit'i carbon$' liberated by t%9 decomposition of reaction products. For tUe qu~~rtz
substrate tiis temperature was 5000 and 'for tantalum, 7500. T'te termination of
film formation could be determined by t" observation of its resistivity vit~out,
TLe aut%,or tuanks 4.A. ?4rnova.and V.U. Antokkingi for.
visual nxaminations
1
assibtance duringithe experiments. Crig.art./Ijass 3 figures/ d I tab so
SUB CODFs It Ic/ SUBM DAM 25May64/ ORIG. RM 002/ OTH. RM 0%
2/2/-~

ACC Nik AP'6272,19 SOURCE CODE: UR/0109/66/011/008/1536/1537
A-LITHOR: Zhdan, A. G. ; Sheftal', R. N.; Chugunova, M. Ye.; Yelinson, M. I.
ORG: none
TI'r T 1~: ;P;-oporties of cad mium -sulfide films produced by vacuum -a.r. ~-ayi ng onto
dirCCZ4ve backings
S0U_P',CF_: Radiotel-hnika i elektronika, v. 11, no. 8, 1966, 1536-1537,
OPIC TAGS: microelectronic tILin film, cadmium sulfide
ABS-IRACT: G. A. Escoficery did not obtain high-quality single-crystal CdS films
0
apparciAly because of noz-ioptimal e:~-zperirnental condiLions (Solid State Electronics,
1
'96--, 7, 1, 31). The present article reports the successful reparation and
_; p
testing of CdS films sprayed onto muscovite, flogopite, NaCl, KCI, aiid Y- -Al. O~
R. Zuleeg's rnethod of spraying was used (Solid State Electronics, 1963, 7, 1, 31).
Carcli 1/2 UDC: 539-216.22:546.-�8'22

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Sep 1947
Fuel Conservation
ftel Conemption
"Ways and Means of Fuel Economy in Industries.,"
A. 1. Sheftel" 5 pp
"Za Zkonomiyu Topliva" Vol IV, No 9
The author discusses general vays and means of attain-
ing greater fuel economy in industries. States a
mthawtical formula which gives th? relation betveen
fuel consumed and amount of production. Very general
and does not give any specific moms of increasing
fuel economy.
23T25

, A.
llt~it~rit: Cr(r, C~int,rai. ns
Central bn,-.tin , for citir!s, Zhil. -kcf... ':,",.cz. 2 No. 2, 1952
- I.
..cnt -1- LL:t cf "us-s.ian Accessions, Liir~,ry of
Gon~-ress, Ju-, I-r - " la~ ified
-Ly t1lic

SHKFTELI, Abram Isayevich, kand.tokhn.nauk; TTLKIN, M.N., red.;
PULIN, L.I., tekhn.red.
[Power supply of Tula Economic Region] Energeticheakaia baza
Tullskogo ekonomicheskogo raiona. Tula, Tul Iskoe knizhnoe
izd-vo, 1958. 46 p. (MIRA 13:3)
(Tula Province--Power resources)

10
MMFTBL 1 0A. 1.
Two accidents with heating boilers. Tod. i san. takh. no.1:34-35
Ja 158. (Heating) (Boilers) (MMA 11:1)

SH~1;PMLI , j~.
pow
Useful exihange of opinions. NTO no.2:61 F 159.
(MIRA 12:2)
1. Predsedatel' Tlil'skogo oblastnogo pravleniya nauchno-
tekhrichesicogo obshchestva energeticheskoy promyshlennosti.
(Electric power plants)

SHEFTEL!, A.I., starshiy elektromekhantk
What, caused the damage of contactor coils. Ble1c. i tepl.tiaga 6
no.8:25-26 Ag 162. OIRA 17:3)

sll~..9~603/00011 bi/Oi2~Oi6
D201/ 308
She I II.Sh.
A system- ()f- oompeasqtion jpq#,a* an gravitation-,
al deviation measured b~ eiectrical pick-ups.''
Priborostroyeniye, no. 1, 1963, 24
The author suggests an electrical method of compen-
sation using two pick-ups with identical static and dynamic charac-
teristics. The two pick-ups are connected electrically only by, means
of a circuit summing the signals from the measured parameters and
compensating for the above errors. The pick-ups are placed in such
a manner that the gravitation and inertia effects are the same- in
both of them, with the action of the measured parameter on the oppo-
site sides of them. Both pick-ups are connected to the indicating
instrument by a differential bridge circuitt producing,the addition
oE signz~ls of the motion of sensing elements in opposite directions
and read-out when they move in the same direction. The conditions-
for m-xxiinum comnensation effect and sensitivity are discussed. The
Gard 1/2

S/119/63/000/00l/012/016
A system of compensation ... D20110308
abovc system of compensation can IL)o used in control instrtments in 4
the uicasurcment of pressures velocities and forces and of electri-
cal quantities during trans~?euts of motion and vibration. There .1 '4
are 2 figures. _..
Card 2/2 -

3HEFTEL.1 . B.T., I kand. takhn. nuilk, dot sent; LI I'S KIY, G.K. , in zh. ;
,.!; r!"
. "if LN, V.A. , inzh,
E!'fect of the waviness of the ring race on the vibration of
a ball bearing. Vest, mashinostr. 45 no.7:49-51 J1 '65.
(MIFIA 18-10)

srs a
r

SH3FTELI, B.T., kand.tekhn.nauk
-
Applying the method of interpolation with the utilization of
complex variables to fie synthesis of a symmetrical linkwork.
Trudy &WI no.16 Pt-1:75-82 '59. (MIRA 13:11)
(Links and link motion)

SHFMLIp ~.T.; SI-VYAKOV, h.M.
~bdeling the corrvgation profile of a rolling-bearing
race. Stan. i instr. 34 n0.1007-38 0 163, (MMA 16:11)

, . . I I
~l Hi":N"V, V.I.; ,di:;IANCI'3YN, A.A.
'J:iing the r~(,r-xdLnpf in3f.r-lurtent. designed nt, the 'Yftlibr" flinnt for
0
rec,;rding the waviness of antifriction bearing grooves. Izm. tekh.
I
no.3-.'-'1-22 Mr 16 5. (,"1 RA N: 5)

SHEFTELI, 1.
-Se- b-o,o,k-* i"rhiting rubbers to metals" by S.K. Zherebkov. Reviewed
by 1. Sheftell). Kauch. i rez. 16 no.8:-40 Ag '57. (KM 10:11)
(Rubber) (Zherebkov, S.K.)

SHEFTELI., I.
New encyclopedia "Ccnstruct-ion materialls." Plast". massy no.1.1:76 163.
(MIRA 16:12)

- - - - - - - - - - - -

AUTHOR: I.
Sheftel'
y
TITLE: Conf e ro rice of Rep re sentat ive s of ti'ie Tyre lzndust r-i Frcnnm
Eastern Europe and the USSR predsLlvi-
toley 9 ti str,.tr, snt,31-alis~
, hinnoy promyshlerinos
lag e ry a ) .
PERIODICAL: -Kauchuk I Rezina, 1958, Nr.l. pp. 37 - 38. (USSi~).
ABSTRACT- This Conference was helrL in Mosoc~w from the 19th
- 27th Noveiaber 1957 and was attended rrY representatives
from Bulgaria, Aun~_raryq East Germany, Poiand. Rumania,
the USSR, Czechoslovacia and China. Improveiie!ita of the
qw-ility of car tyres and the use of ne,.N, -!materials, the
mechanisation and automation of the Indust -7 etc- -7er;-
discussed. The Conference heard the f;.,lic,,--rin~z reporf-st
K. Rakovskciy (Bulgaria) on "The Results of 'Using 11i3cose
and Nylon Cord, Impregnated with Latex and Resorcinol
Formaldehyde Resins"; Dr. Z. Bru,,-ner on " Inve st ig-at ions
on the Bonding of Rubber and Viscose Cords, and blethods
111. P. Ser "A 11 1.
of M,,akinq Rubber Tyres 7n Methrod of Making
A Method of blaking
Casingslf-; Z. Barta (Hungary) on
"
Tyre Cords from Artifical Fibres - Dr- A. Shpringe.-
(East Germany) on "Research Woric 6arried out In the
Research Centre for the Rubber Industrv in Furstenwald
Dard 1 3 to Improve t',Ie Quality c--F' the Tyre:, V. aYsenborn

of of the Ty-re Industj--Jr F110!
e r n
Europe and the USSR.
(East Ger:riarfl on "TubEless Light V1 e i 1711 t T.-Irs
T. Ylozlovs!.,iya on "Improving the 'Wear ResistaRce of
Protective Rubbers"- A. Olyashek (Poland) on I-n-,,resti-
gations on Rubber Mixtures and Their Components and
Methods of Evaluating the Quality of Tyres"; G. 14.
Buy~co (USSR) on "Investigations ;f the Physico-Mechani-
Cal Properties of Rubbers for Car Tyres"; V.P. Zuev
(USSR) on "The PrEpantion of Highly Dispersed Carbon
Black from Liouid iLa"a Material"; K. A. Pechkovskaya
on "Physic o t.-C~elcal Method of Evaluating the 11roperties
of Caybon Blacllcs'-, R. V. Uzina on "The,,Imipregnation of
Cords' ; N1. ~4. Rez'niklovskly (USSR) on Tj-,~ Determination
of the Wear Resistance of Rubberg', B. A.. Oogadlkin (USSR)
on "Vuleanisation Methods for Tyre 'E~abbers"; N. D.
Salchnovskiy (USSR) on "Wear Resistance off, Protective
Rubbers"; A. G. Shvarts (USSR) on "Basic P',Iys4-.co.-
Mechanical Properties of Rubbers Based on CKM in Tyre
Casings": V. I. Novopol'skiy on "Methods c-F Evauarini7
the Quality of Car Ty'res"; V. P. Bidernati (Ussa~ O_n
"l,letl-ods of CalculatinE Pneumatic Tv-ces"; i'- Fisher
,jae4cl 2/3 (Czechoslova'cia) on I'Methods of Determining the Strength

jAvistion fuel. 1. A~ Shefte). U.S.S.R. 69,717, N
:;a. 114-4. llygroscopic besizene and
ins,d-. mv treated with of HuOll. for invvention
4 the -pn. of liO. which cau~ ~wruion L4 metAlfic
'M. jlt~ch