SCIENTIFIC ABSTRACT SAMSONOV, G.V. - SAMSONOV, G.V.

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• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001447020001-2
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 22, 2000
• Sequence Number: 1
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

SOY/21-59-9-12/25
On the Problem.of the Solubility of Boron in Silicon
at a temperature of 1,2000 0. The data obtained on.the-..,
solubility at room temperature are close to there-
sults of Pearson and Bardeen Z_Ref 6 7 but differ to a
_Z7 e
certain extent from the data of Horn Ref 5-7. Th
paper also shows the existence of-a eutetic correspond
ing to 18 at. per cent of boron at a melting point~of
1,370 00. The*course of the solubility diagram ata
higher content of.boron.shows the possibility of the
existence of one,more chemical composition of boron
and silicon which probably can be,expressed by the
formula B Si and which melts congruently at tempera-
3
tures close to 1,700 - 1,800 0C. This comDosition was
-f-phase. Based-on the o
conditionally,call,~d the b-
tained data, a hypothetical form is constructed for
the section of the boron-silicon system ran5ing up
Card 2/3 to 40.at. per cent of boron (see Graph Nr 2

66299
.2.2.2 O~ 57 -2 1/ o 0 (A SOV/136-59-11-10/26
AUTHORS: Paderno, Yu. B., Serebryakova, T.I. and Samso
a,.nov.G-.V-
TITLE:' Production and Some Properties of Hafnium Boride
PERIODICAL: Tsvetnyye metally, 1959, Nr 117 pp 48-50 (ME-0-R)
ABSTRACT: Considerable work has been carried out on titanium and
zirconium borides. Little'study has been made of
hafnium borlde, but preliminary investigations*show
it has even better.properties. There is probably
only one stable compound - the diboride with AlB 2type
structure. It has been obtained by precipitation from
the gas phase (Ref. 2.3). In the present work it.was
produced by the reduction of hafnium oxide by boron or
boron carbide in a vacuum furnace. The relation of
the free energy with temperature is
F - 358.2 x 103 175-05T
3
F = 91.9 X 10 39-1T
for reduction by boron carbide and boron respectively.
The reducti-on with carbide takes plare at somewhat
Card 1/2 higher temperatures than with boron. Ata pressure

66299
SOV/136-59-11-10/26
Production and Some Properties of Hafnium Boride
of 10-1 mm mercury at 1300 to 16000C.cIhemical analysis
showed it wasthe stoichometric dAoride. X-ray
analysis showed,the cell to be a = 3.137 and c =:3.469
agreeing with the 1;terature. Hot pressing was
carried o~tat 2650 for 5 minutes with a load of
150 kg/cm The minimum porosity obtained was 15.1%--
The electrical resistance of the compound was 8.8 micro
ohm/cm agreeing with the literature when porosiq is
taken int2 account. The microhardness was 2990-
500 kg/mm At temperatures above 650 to 700 Can
oxide film was formed on the compound. There are
15 reference.s. of which 9 are Soviet, 5 English and
1 German.
ASSOCIATION: Institut metallokeramiki i spetsiallnykh splavov AN USSR
(Institute of Metalloceramics and Special Alloys, Acad
of Sciences, Ukrainian SSR)
Card 212

~,300 66650
'212 00 SOV/21-59-11-10/27
AUTHORS: Samsonov, H.V. and-Paderno, YU-B.
-----------4
TITLE: Electric Properties of Borides of Rare-Earth.Metal-s
PERIODICAL: Dopovidi Akademi nauk Ukrayinslkoyi RSR, 1959, Nr 11,
pp 1215 - 1218 ~UiSSR)
ABSTRACT: This is an account of a study of the possibility of
utilization of hexaborides of alkaline,and.rare-,eAtth
metals as cathodes in electric devices., Furthering
the results of studies of this matter contained in
books listed in the reference block, the authors in-
vestigated the electric resistance and the thermo
e.m.f. in hexaborides of lanthanum, cerium, praseo-
dymium, neodymium, samarium. and gadolinium...The ex-
periments were conducted in described installations,
/-Ref 11 and 12 7, in the region,from room temperal
'fure to 700-800eb. Measurements were made-on samples
of powders of respective hexaborides by-hot pressing.'
The results are compiled in.a table. It was,found..
Card 1/2 that hexaborides are metallic conductors with ho

66650
SOV/21-59-11-10/27
Electric Properties of Borides of Rare-Earth,Metalsi
conductivity which tallies well with their electronic
structure, and that the hexaborides have a resistance
less than resistance in metals. In order to obtain
thermo-emitters with high resistances, the authors
recommend combining borides which greatly differ
from one another in congestion of d- and f-electro-
nic levels and have lower values of work function
of electrons, especially such combinations of bo-
rides as lanthanum-cerium, cerium-gadolinium, cerium-
terbium, cerium- lutecium, or a combination of
yttrium and scandium bbrides with lanthanite borides.
There are 2 tables.and 19 references, 14 of which are
Soviet, 2 German and 3 English.
ASSOCIATION: Inatytut-metalokeramiky i spetssplaviv AN URSR.(In-
stitute of MetaUWeramics and Special Alloys,of the.
AS UkrSSR)
PRESENTED: By V.M. Svyechnykov, Member, AS UkrSSR
SUBMITTED: January 30, 1959
Card 2/2

i E30VV?F-4
Tl 26
r 2j~
hk
k
UTHORS: ;
Mt
Samson.ov, G.V., Dzeganovs
ly, mas
o, I.A.
TITLE: Europlum He_xiil~#ide (Geksaborid evropiya)
PERIODICAL: Kristallografiya, 1959, Vol 4, Nr 1, pp:llg 120 (USSR),
ABSTRACT: EuB6 has hitherto been unexamine.d. ~It was synthesised
UB 6 +~300 in vacuo
by the reaction Eu 203 + 3B4C 2E
.
at 1 650 OC over -the cou.rse of two.hours. X-ray powder
photographs were taken of the product which contained
less than 0.02106 0 and was dark grey. The unit cell is
cubic with a = 4..163''t,.0.001 kX and space group O~,
characteristic of all the hexaborides 3of the rare earths.
The X-ray density is 4.99 � 0.01 g/cm . The atomic
radii of Eu and Yb are greater than those of the other
rare earths and their unit cells are correspondingly
greater (mostly about 4.14). The work function of EuB
(for an emission constant of. A = 1 000 - 5 000 A/cm2)
was found to be 4.90 eV which is.higher than that of any
other rare!--earth hexaboride. It indicates the maximum
multiplicity and consequently the greatest binding of the
Cardl/2 electrons of Eu which has in the normal state 7 electrons

Europium Hexaboride SOV/70-4-1-21/26
in the 4f-shell, without the presence of electrons in
the 5d-shell, such a 5d-electron in Gd causes a sharp
fall in the work function of its hexaboride by.comparison.
with EuB 6((PGdB 2*06 eV). There are 2 figures and
11 references, 9 of,which.are Soviet, 1 international,.
I English,, 1 German.and 1 Scandinavian.
ASSOCIATION: Institut metallokeramiki i.spetsialln-ykh splavov
AN USSR (Institute of Metallo-ceramics and Speaial
Alloys of the Ac.S--.,, Ukrainian SSR)
SUBMITTED: August 22, 1958
Card 2/2

SOV/70-4-4-11/34
AUTHORS: Sam Zhuravlev, N.N., Paderno, Yu.B. and
M61ik-Adamyan, V.R.
TITLE: The Synthesis and Properties of Samarium Hexaboride
PERIODICAL: Kristallografiya, 1 959, Vol 4, Nr 4, pp 538-541 (USSR)
ABSTRACT: SmB6 was prepared by Sm 203 *3B4C = 2SmB 6 + 3CO, the
Sm 203+ 3B4C being previously heated as powders to
350 OC and pressed into pellets which were heated
in vacuo for 1 hour at 1 000 9 and then 10-15 min at
1 600 OC. An alternative method, Sm 20 3,+ 15B
2SMB6 +.3BO , was also successful..
0
Heating for 1 hour,at 1 650 C gave SmB in a finer-
6
grained form than did the B 4C method. SmB 6 is dark
blue. It was examined in an RKU-114.powder camera and
proved to be cubic,, with the CaB 6 structure and cell
size a = 4.128 +~O-003 9 -
Observed and calc~ilated intensities were compared.
Cardl/3

SOV/70-4-4-11/34
The Synthesis and Propertles of Samarium Hexaboride
dcale = 4.85 9/cM 3. ~ The coefficient of em:Lss:Lv:Lty c
was measured at temperatures between 900 and 1 600 0C and,
took the form:
log C c/X U/T - I/T
where e Is the emissivity of an absolutely black
body, and
X = 6 0 m1i decreasing linearly-from 0.75 at
90vto o.68 at.1 600 OC. The maximum observed
density of powder specimens sinteredat-2 000 0C was
4.79 g/cm3. The microhardness was 2 500 *300 kg/mm.
The electrical resistance was,,,388 liacm.-,The thermo
0
e.m.f. was 0measured.between 20 and 700 C.. Between
20 and 60 C it was found to be -.4 ItV'/OC. The melting
0 - I .
point under argon was 2 540 C. The coefficient of
0
thermal expansion from 20 to 8oo C was
6.5 x 10 -6 The work function was 4.4 eV. These physical
Card2/3

SOV/7o-4-4-11/34
.The Synthesis and Properties of Samarium Hexaboride
propevt:Les are compared with those of the rare earth
hexaborides.
There are 3 figures, 1 table and.7 references$ of -Which
5 are Soviet, 1 German and 1 English.
ASSOCIATIONS: Otdel tugoplavkilch soyedinenly Inst1tuta metallo-
keramik! i spetsialinykh spla-Vov AN UkrSSR (Section of
Refractory Compounds, Institute of Metallo-ceramics and
Special Alloys of the Ac.Sc., Ukrainian SSR
Kafedra fizik! tverdogo.tela MGU im. M.V. Lomonosova
(Department,of Solid-state Physics of Moscow State
University imeni M.V. Lomonosov)
SUBMITTED: January 7, 1959
Card 3/3

SOV/70-4-4-12/34
AUTHORS. Samsonov, G.V., Paderno, Yu.B. and Screbryakova, T.I.
TITLE: On e ~Bori~es of Praesodymiumi Erbium and Terbium
PERIODICAL: Kristallografiya, 1959, Vol 4, Nr 4-, pp 542-544 (USSR
ABSTRACT: The borldes of Pr, Er and Tb were made from the oxides
by the reactions:
Me2o3 + 3B4C =- 2MeB 6 + 3CO
and
Me.03 + 15B = 2MeB6 + 3BO
which were carried out in an electric resistance furnace
under vacuum at 1.500 - 2 000 .0 C. X-ray powder photo-
graphs were taken in,a 57.3 mm camera. PrB6 was cubic
with a = 4.12 With Er a product identical with UB
was found, presumably ErB4 with a tetragonal cell with
a =.7.o8, c = 4.o2 A On the cooler parts of the
furnace a blue film of.ErB 6 was condensed and has been
Cardl/2 described earlier (V.S. Neshpor and the author Ref 8).

SOV/70-4-41-12/34
On ihe Borides of Praesodymium, Erbium and Terbium
obtained: cubic TbB 6 with.
For Tb,1afixture was
a 4.1 and tetragonal TbB4 with a 7.13and
c = 4.07 A. Intensities were calculated to index the
pattern unambiguously. Tb may have two electronic
configurations, Af 85dlGs2 or 4f96s2 and a choice
should be possible on the basis of physIcal propertles.
Measurements of the work function for TbB6 gave (for.an
emission current o6 120 Vem 2deg2) (P =- 3.1 eV, which
corresponds to 4f 5d-L6s and gives a decisive choice.
Powder data for the four compounds are tabulated.
There are 4 tables and 12 references, of which 6 are
Soviet, 2 German, 2. Engllsh~and 2 French.
ASSOCIATION: Institut metallokerami-ki 1 spetslallnykh splavov
AN UkrSSR (Institute of Me'tallo-ceramics and Special
Alloys of the Ac.Se.Ukrainian SSR)
SUBMITTED: December 6, 1958
Card2/2

5.2100
AUTHORS: Samsonov, G. V., OboJ
TITLE: Brief Communications.
System
PERIODICAL:
77293
SOV/63-4-6-27/37
nchik, V. A., Kulichkina, G. N.
The Fusion Diagram of KBF K031
4,
Ehimicheskaya nuaka i promyshlennost', 1959, vol
Nr 6, pp 8o't-805 (USSR)
ABSTRACT: The method of obtaining boron by electrolysis of
melts has been least investigated, but it might have
Industrial value if sufficiently developed technologi-
cally. For the electrolysis, a bath containing
B203-P MgO, and MgF 2 was used, and 92% pure boron was
obtained at 1100. In the present work, the.fusion
curve of system KBF 4-KC1 was investigated. Starting.
materials were KC1, and KBF 4 obtained from borofluoric
acid. The thermal analysis was carried out with a
Card 1/3 Kurnakov pyrometer. Melting was done in platinum

Brief Communications. The Fusion Diagram
of IMF 4' Y-Cl System
ASSOCIATION:
SUBMITTED:
Card 2/3
77293
sov/63-4-6-27/37
crucibles. From the results of thermal and chemical
analyses (determination of boric acid), a fusion
curve of the above system was prepared. A chemical
COMT30und having the form-Lila KCI-11KBF 4 (mP 5900
was detected in the system. Theabove compound forms
a eutectic mixture with KBF 4' containing 97.8% of
YBF 4 (mP 508'). The second eutectic system (mp 4710)
contains 87.6% of KBF4 and is formed from KC1-11KBF 4
and KC1. There is 1 figure; 1" table; and 7 references.,
4 Soviet, 2 French, 1 U.S. The U.S. reference is:
U.S. Patent Nr 2572249, 1949.
Institute of Cermets and Special Alloys, Academy of
Sciences, UPxSSR (Institut metallokeramiki i
spetsiallnykh splavov Akademii nauk USSR)
May 29, 1959

p. icationS. The riusion Diagram
,j:-jef Commun
op pMFJ~KC1 System
Card 3/3
77293
sOV/63-4-6-27/37
o
$8f.

5 (2) SOV/78-4-9-5/44
AUTHORS: Neshpor, V. S., Samsonov, Go Vo
TITLE: On the Problem of the Eleotronic Structure and the Condition
for the Formation of Boride's.of the Type MeD 6
PERIODICAL: Zhurnal neorganicheskoy:khimiip 1959, Vol 4, Nr 99
pp 1967-1969 (USSR)
ABSTRACT: The electrons necessary for the f ormati on of the 5 covalent
bonds in the hexaborides cannot,be supplied by boron alone,
two of them.must be supplied by the metal (Refs 5, 6). The.
formation of the hexaborides probably depends on the first
and second ionization potentials of the metal. The values
of the potentials determine the attractive force of the
two valence electrons. In table I the ionization potentials
of the metallic elements of the periodic system are listed.
It is concluded that all the metals having first ionization
potentials below 6A - 6.8 ev, and second ionization poten-
f
tials below 11.5 - 12 ev are able to form hexaborides. In
Card I/Ap reference 6 it was proved that the bivalent metal in the

SOV/78-4-9-5/44
On the Problem of the Electronic Structure and the Condition for the
Formation of Borides of the Type MeB 6
hexaboride may partially be substituted by sodium. The
highest electron concentration at which this substitution
still takes place, is 1.6.electrons per metal atom. Thus,
it follows that the bond of the borine in MeB6 requires
1.6 electrons, the remaining 0-4 electrons per metal
atom probably being present as common electrons which would
explain the comparatively high electrical conductivity
of the hexaborides of bivalent metals. There are I table
and 15 references, 10 of which are Soviet.
ASSOCIATION: Institut metallokeramiki i spetsiallnykh splavov Akademii.'i.
nauk USSR
(Institute for Metal Ceramics and Special Alloys of the
Academy of Sciences, UkrSSR)
Card 2/)

5 (2)
AUTHORS: Sameonov, G. V."Koval'ch*nkoj Me Say
-Te-rMfajg1-yWdrTvr,--T S.
TITLE: Production of Disilicides of Difficultly Fusible Metals
PERIODICAL: Zhurnal neorganicheskoy khimii 1959v Vol 4, Nr 12#
pp 2759 2765 (USSR)
ABSTRACT: Pure, finely powdered Ti, Zr, V, Nbj Ta, Crg No, and W w'ore
mixed with silicon powder in stoichiometric ratioi pressed into
small briquets-and annealed in argon atmosphere.&-% 600-1,2000
for 0,5-32 hours. The heating took place in an apparatus de-
picted in figure I* The reaction products were analytically
tested (under the supervision of T. Ya. Kosolapova) and radio-
graphically (RKE and KROS cameras) for free and bound Si. The
reaction time needed for the production of completely ho'nogene-
ous disilicides is given in table 1. There is an exponential re-
lation between reaction temperature and reaction time (Fig 3),
which allowed to calculate the activation energy for the diffu-
sion of Si into the metals. The values of this energy are like-
wise listed in table I and compared with the data given in ref-
erence 6 for the activation energy during Si diffusion into
Card 1/3 compact metal. The fact-that the activation energy of metallic

Production of Disilicideslof Difficultly Fusible Metals SOV/78-4-12-16/35
powder is much higher is explained by the crystallization pres-
sure occurring in the formation of disiliaide particles which
interrupts the contact between metallic and Si particles not yet
entered into reaction and complicates diffusion (Refs 70). The
effect of diffusion-inhibiting.oxide filma.in also likely to be
.more strongly pronounced in the case of pulverulent mixtures.
As a variant, the authors investigated formation of disilicides
by vacuum reduction of the metallic oxides according to the
formula Mex 0Y + zSi - MexSi Z-Y + ySiO and checked the beginning
of the reaction by measuring the pressure which rose as a result
of Sio formation. The results obtained for Tiq V,.Nbl and Ta are
listed in table 3. This method requires a more complicated ap-
~aratue and is more difficult to employ in industry than the
direct fusion of metal Iwith silicon. Furthermore, it yields less
pure products and is inappropriate for metals with volatile
oxides (Mo,W). The optimum conditions for a direct reaction be-
tween metal and:'silicon are:.Ti$i2 1000 C, 2 hourej ZrS12 1000 C9
2 hours; VSi 1200.C, 0.5 hours; NbSi 1000 C, 0-5 hours;
2 2
Card 2/3 TaSi 2 < 1100 C( hoursi CrSi 29 NoSip and WS'2 1000 C' 0-5 h So

Production of Disilicides of Difficultly Fusible letals SOV/76-4-12-16/35
L. X. xhrenoymp G. N. Makarenko, and V. P. Dseganovskiy assisted
in the *xperiments.'There are 4 figur*st 3 tablext and 11 ref-
erences, 6 of which are Soviet.
ASSOCIATION: Institut motallokeramiki i spetsoplavoy Akadenii nauk USSR
(Institute 6f - 'Cemets and Special Alloys of the
Academy of Sciences, UkrSSR)
SUBKITTED: July 2, 1958
Card 3/3

676S6
/Is 7 1~=50
12.* 6 / 00 SOV/126-8-4-19/22
AUTHORS: 2~kmsonovj G.V., Neshpor, V.S. and KhrenovalL.M.
TITLE: Hardness and Brittleness of Metalloid Compounds
PERIODICAL: Fizika:~`me tall ov i metallovedeniye, 1959, Vol 87 Nr 1+,
ABSTRACT:
Card
1A
pp 622-630 (USSR)
4 Ca, tg~ JLa and,
Specimens o ~r, (Lb, !~a,r Mg, W
')"Ce borides and Ti, Zrj Cb, Ta, Cr, Mo, WlFelklCo and,4Ni
illicides, of limiting phase composition, were-made b7y
sintering pawderslyof these-compounds by hot pressing
with subsequent long annealing at a high temperature in,
order to remove internal stresses. Microsections made
from these specimens were etched in order to expose the
grain boundaries and to remove the surface-layer which
had been cold worked during grinding. -The microhardness
was tested with a PIAIT-3 instrument. Loads of 20-200 g
were used. The experiments have shown that the micro-
hardness number's depend on the load used, and this
relationshipis beyond the limits,of accuracy of the
measurements. The relationship between microhardness
number and load was first established by Bochvar et al
(Ref 10 for relatively soft materials (Cu, Zn and Armeo
iron). In other,,papers (Refs.5-7) the relationship

676%
SOV/126-8-4-19/22
Hardness and Brittlenes3 of Metalloid Compounds
estimating the number and nature of cracks and other
defects thereby arising. In order tollower the
subjectiveness if this estimation a so-called average
brittleness mairk is introduced, which is calculated
according to the degree of destruction shown by the.
impression. . The estimation of the degree of
destruction is carried out according to a 5-mark scale
(see Fig 5 and Table 1). Figs 6 and 7 show the
dependence of the summary mark of destruction of
borides and silicides, respectively7 on load. - Table 2
shows the brittleness characteristics of m6talloid
compounds. The authors arrive at the following
conclusionst The ml'crohardness number depends on the
load at which theinvestigation is carried out., The
nature of the relationship between microhardness number
and load of materials with very great and comparatilvely
low hardness is identical and appears to be due to the
Card nature-of plastic deformation of the surface of hard
3/)+ bodies in microhardness testing. The brittleness
characteristics of metalloid compounds obtained by the
microbrittleness methods in this work agree satisfactorily

67696
SOV/126-8-If-19/22,
Hardness and Brittleness of Metalloid Compounds.
with those obtained by.the author earlier for several
compounds. The brittleness of compounds increases
with decrease in mean square displacement of molecular
complex centres in the crystal lattices of the
compounds, i.e.with increase in rigidity in the
interatomic bond and with decrease in the possibilities
of stress relaxations in the material. The hardness
of metalloid compounds.increases in the order
silicide-nitride-carbide-boride, and the brittleness
Card increases in the order silicide-boride-nitride-carbide.
4/4 There are 7 figures, 2 tables and 18 references, of
which 16 are Soviet and 2-English.
ABSOCIATION: Institut metallokeramiki i,spetsiallnykh splavov
AN USSR
(Institute of Metalloceramics and-Special Alloys,
Ac. Se. Ukr.SSR)
SUBMITTED: November 12 1958

MODYLWSKAYA, K.D.; SAMSONOV, G.V.
Acid and alkali resistance of the transition metal borides. Ukr-
khim.zhur. 25 n0-1-'55-61 159- (MIRA 12:4)
1. Inutitut metallokeramiki i spetesplavov AN USSR.
.(Borides)

5 Q,
-AUTHOR: Samsonov, G. Vey (Kiyev) SOV/74-28-2-4/5
TITLE; Borides of Rare Earth Metals (Boridy redkozemellnykh
metallov)
PERIODICALt Uspekhi khimii, 1959, Vol 28, Nr 2, pp 189-217 (USSR)
ABSTRACT: Borides of rare earth metals have been used in numerous
technical fields, above all in the field of electronics,
during past years. At present the methods of their synthesis
as well as their properties are intensively investigated by
Soviet and foreign scientists. Due to the already extensively
available material generalizations could be made in the present
-DaDer. Th,- striicture of borides was; investigated by
Stackelbe.-g and Neuma= 'Fief 1) for the first time as well as
by Allard in '1932 (Ref 2j. Hexaborides of sodium, lanthanum,
cerium, praseodymium, neodymium, gadolinium, erbium and
ytterbium were investigated. It was determined that all these
hexaborides possess a cubic lattice
of the type of cerium
.
chloride, which is centered in an octahedron of 6 boron atoms
(Fig 1). In one of the first publications, in which,the
crystallochemistry of borides of alkaline-earth and rare earth
Card 1/5 metals is elaborated (Ref 6), it ia indicated that hexaborides

Borides of Rare Earth Metals
Card 2/5
SOT/74-28-2-4/5
of elements of the II., III,and IV. group of the periodic
system are formed. All these hexaborides, with the exception
of Be- and Mg-compounlo, have a cubic struoture of the
type CaB 6* It was found that in the series of cubic
hexaboridee there are several sulb-groups. the place of which
is determined by the valanca of the metal atom. In the
formation of hexaborides the metal atom emits 2 external
electrons to boron in order to form 5 h3rbridG connooted.orbits,
which are formed by a, p, and exciiedl d functions. In so far
as the hexaborides do not produce any proportiss of ion
oompoundso the emission of electrons to boron takes place as a,
statistic electron exchange between metal and boron atoms * The.
analysis of experimental material indicates (Ref 12) that
hexaborides are actually formed by thoss metals only the first
ionization potential of which does not exceed 6.6-6.8 ev and
the second ionization potential not 11.5-12 ev. The following
oonditions have to be maintained for the formation of metallic,
hexaboridess,l) a certain value of the first and second
ionization potential which does not exceed the critical valuess'
2) the presence of bivalent electrons on the no-level', 3) the

Borides of Rare Earth Metals
S~V/74-28-2-4/5
possibility of a participation of the partly filled or empty
(n-l)d-level in the bond metal boron. The existence of
5f-levels is not obligatory-, however, they play their part
in the formation of hexaborides (Ref 5). In this connection
all rare earth metals would have to form hexaborides. This
is actually the case. For the present only the prometheum
and thulium hexaboride are still unknown. In the earliest
publications the metallic conductivity of hexaborides was
already determined (Ref 1) and confirmed later on
(Refs 1, 4, 5, 20, 21, 22). An exact phenomenological
analysis of the variation of the electric resistance of
hexaborides of rare earth metals 1sv at present, complicated
since there is a lack of data on the resistance of both
hexaborides and metals. All hexaborides of rare earth metala
are marked by a poor work function of electrons and some of
them by high 4wission-fluxes. Their magnetic properties were
investigated on samples obtained frozi media melted by means of
electrolysis (Refs 4, 30) (Table 4). The investigation of
the susceptibility course with temperature (Fig 9) han-shown
an approximate linearity of the susceptibility coefficients
Card 3/5 at high temperatures and a great deviation of the straight

Borides of Rare Earth Metals SOT/74-28-2-4/5
lines in the temperature range of 0-3500. This is explained
by the presence of ferromagnetic impurities in the
preparations. The data on the thermo-elgotromotive force of
hexaborides are given in Table 2 . Liks borides oftransition.-
metals of IV., V., and TI. group of the periodic system borides
of So~ Y and lanthanides are distinguished by high melting
temperatures, hardness, moderate tharmal expansion ooeffioients
and chemical stability. There are only few data available -
concerning chemical properties of hazaborides (Re'As 28,.37, 42).
Borides of rare earth metals can be obtained by different
wayss 1) by direct binding of metal with boron; 2) by
electrolysis of molten media; 3) by the reduction of mixtures
of metallic oxides and borio an1hydrides with carbon; 4) 1 1
by the reaction taking place between metallic oxides and boron
carbide or boron mixture and carbon; 5) by the reduction of
metallic oxides with boron. The powder& of borides are viscous,-,,
brittle and not plastic. By the usual way of Bintering of pressed
briquettes no compact products can be obtained from them,
(Ref 51). Several conditions for sintering are given in
Table 7 - Compact products can be obtained from boridea by
Card 4/5 casting (Ref 33). In this casa~ however, a contamination and

Borides of R-are Earth Metals VOV/74-26-2-4/5,
Card 5/5
coarsening of the structure must be taken into account.
In conclusion it may be stated that the propertios and
production methods of borides of rare earith metals are not
yet sufficiently investigated. There are1l figures,
7 tables, and 72 references, 47 of wh1oh are Soviet.

SA_MSON _ .1, doktor tekhn. nauk; RADOMYSELtSKIY, I.D.
. 0-Y,-.-G.V- LSamsonov, H.V
J
LRadomysel's1kyi, I.3Q, Imnd. tekhn. nauk
Conference on problems of powder metallurgy. Visnyk AN URSR 30
no.3:71-72 Mr '59. (min 12:6)
(Powder metallurgy-Congresses)

.b
SIJISONOV, Cre LSamBonov, He), kand. takhn. nauk; IJAMWO, V.
International scientific'contacts of the Institute of Metallo-Caramics
and Spacial Alloys of the Acadear of.Sciances of the Ukrainian S.S.R.
Tisnyk AN URSR 30 no'7:64-66 -Tl 159. (MM 12:10)
(Gerami; metals) (Alloys)

SAKSONOT, G.T.
fta F~e 1 - orl wwi-
Some Important fields of use for rare earth compounds. TSvet.
met. 32 no.2:58-59 F 159. (MIRA 12:2)
(Rare earth compoimds)

21(l)
AUTHORSt Paderno, Yu.,B., Serebryakova, T. I. SOV/20-125-2-20/64
Samsonov, G. V.
TITLE: The Compounds of Terbium With Boron and the Electron
.Configuration of the Atom of Terbium (Soyedineniya
terbiya s borom i elektronnays konfigurat'siya atoma
l
terbiya)
PERIODICAL: Doklady Akademii nauk SSSR, 1959, Vol 125, Nr 2,
PP 317-318 (USSR)
ABSTRACT: Hitherto, the compounds of nearly all ra:~6-earth metals with
boron, with the exception of promethium, terbium, and
thulium, are known and have been sufficiently well investigated.
A.mong them, the compounds of terbium,with boron are of special
interest because of the 2 possible variants of the electron
structure of the terbilam'atom (which are described by the'
configurations 4f 8 5dI6s2 or 4f96s,),. The terbium- and boron
compounds were produced by the reduction of terbium oxide by
boron carbide. Tb20 3 + 3B 4C 2 TbB 6 + 3 CO and by boron
with previously
B 2TbB 6 + 3BO in accordance
Tb20 3 +15
Card 1/3 ,
1

The Compounds of Terbium With Boron and the Electroa BOV/20-125-2-20/64
Configuration of the Atom of Terbium
Card 2/3
described methods (Refs 3, 4)- In both cases the reduction
0
took 1 hour at 1650 .The reduction with boron resulted in a
blue-colored product, and its X-ray.picture is characteristic
of the hexaborides of the rare-earth metals with cubic
lattice of the structural type 01 . According to the results
h
obtained by calculating the intensities of X-ray reflections,
this product was found to be terbium-hexaboride with the
lattice period a - 4-11 A. Reduction of the te:-bium oxide
by boron carbide gave a greyish-brown product, viz TbB
a 4
with the identity periods a - 7.13 A and c - 4.07 A of the
tetragonal lattice. The work function of the electrons in the
thermoemission from TbB6 is P= 3-1 ev and was determined by,
V. A. Trigubenko and B. M. Tearev. This value corresponds
to the dependence of the work function of the borides on the
ordinal number of the rare-earth metals, which had been
determined previo-oisly (Ref 2) assuming the electron structure

The ComDounds of Terbium With Boron and the Electron SOV/20-125-2-20/64
Configuration of the Atom of Terbium
8 2
4f 5d'6s of terbium. Thus of the initially mentioned
two structures, the last-m;ntioned is uniquely confirmed.
The existenoo,of thefsd -electron configuration indicates
a considerable degree of binding,of the electrons of terbium
and boron in the sd-band of the hexaboride lattice. The
existence of the borides TbB 4 and TbB 6 and their
crystallo-chemical characteristics were for the first.time
determined by the authors. There are 2 tables and 6
references, 5 of which are Soviet.
ASSOCIATION: Institut metallokeramiki i spetsiaitnykh splavov Akademii,
nauk USSR (Institute of. Metal Ceramics and Special Alloys'
of the Academy of Sciences, UkrSSR)
PRESENTED: December 9,1958 by S. A. Vekshinskiy, Academician
SUBMITTEDt December 8, 1958
Card 3/3

5(21f SCiV/20-125-4-37/74
-AUT110RS: Portnoy, K. I., Samsonov, G. V., Solonnikova, L.'A.
j --------------
TITLE: On the Interaction of'Boron. Carbide With Silicon (K voprosu
o vzaimodeystvii karbida b6ra a kremniyem)
PERIODICAL: Doklady Akademii nauk SSSR, 19599 Vol 1251 Nr 4, PP 823-825
(USSR)
ABSTRACT: The system boron-silicon-carbon is interesting because of its
considerable hardness, its chemical stability and its semi-
conductor-properties. Inthe Usitem boron-carbon e.g. the com_.
pounds B C and B C (hardness 5000-5500 kg/mm2,,Refs 1 2)
41 6.5 1 ' - . f
ds-
are found, in the system silicO47carbon the SiC-compoun
,
( 2
'
with a hardness of 3350, kg/mm I (Hef',3); the- bLor_on_-ai-1-icon-.
system' contains also compounds %;'th
. simi1ar. proper-ties ~ (Ref-4)
After a survey of publications.(Refs 5-8) the authors discusV
the results they had achieved. They pressed mixturds.of silicou~.,
and boron carbide powder at 1700-2350 0for 1-5 - 8 minutes...~
In this connection part of the silioon..volatilized. A clearly
marked maximum of,the specific weight was pyonometrically de-.
termined, i.e. at 25-30 % by weight of Si. Figure 1 shows
Card 1/3 the microstructures typical of the alloys investigated. Already

On the Interaction of Boron Carbide With Silicon SOV/2o-125-4-37/74
at an addition of 2% Si to boron carbide a lighter colored
phase forms (Fig 1b). The amount of this phase varies only
little up to a 20~6 Si-oontent, whereas in the Case of 28% Si it
increases considerably (Fig I-). In the latter casethe micro-
hardness attains 2000 kg/=2. It remains practically constant
in the case offurther Si-increase (Fig 2a). This phase is
apparently a saturated solid solution of boron and carbon (or
boron carbide) in silicon. In the case of 25% Si the micro-.
structure shows clear separations of the,chemical compound
(Fig 1g). The hardness of the second phase increases with in-'
creasing silicon-content in the alloy and attains a maximum
of -, 7000 kg/mm2 in the case of an Si-content of 40-50% by
weight. It then decreases .to 3500-~4000 kg/mm.2 (Fig 2b). From
50% silicon onwards a fine-grained,eiui'tectic becomes visible
between the grains of the silicon- and,carbide phase (tip to
80~. Si-content..in the alloy). On anaddition of 26/,.. Si to
boron carbide the X-ray investigation.shows the appearing
lines of -a new phase. They are most clear at 35-40%'-Si; ~at
50-7qo Si they pass over into the lines of the solid solution
of boron and carbon in silicon, which are well marked at 75% f1i
(Fig 3). The maximum of electric resistance of the samples is
Card 2/3 attained at 28-35% Si in the alloys. From the above it is

On the Interaction of Boron Carbide With.Sil-iaon.-~.~SOV/20-12-5-4-37/74
possible to draw a conclusion on the formation of a ternary
phase of boron with silicon and carbon which mai have the
composition B 5sic 2* Its hardness of -700O.kg/mm expl airs its
high grinding capacity (Ref 9).-This phase has a,congtant
resistivity to oxidation in a*irg at least up to 1200 1 to
mineral acids.and their mixtures also in the case of boiling-
There are 3 figures and 9 references, 5 of which are Soviet..
ASSOCIATION: Vsesoy-uznyy- institut aviatsionnykh materialov 'All-Union-
Institute of Aviation Material). Institut.me -tallokeramiki..--..
i spetsoplavov,Akadeiaii-nauk SSSR (.Institute,o,f Powder Metal-
lurgy and.Special Alloys of the, Academy-of sciences USSR)
PRESENTED: December 16, 1958, by.A. A..Boahvar,,Aoademician
SUBMITTED: December 16t 1958
Card 3/3

A t
JI rjz .58
Awl
~t331-Sna '-M A.
s A
33
ig
-it
Ir
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Z.
av.
A
C~l I
J9 LS I A
Al a. BE
a d
M!
ts 41 00

Ely /)-2 4 IV 0 V
PHASE I BOOK EXPLOITATION SOV/4874
Rakovskiy, Valentin Sergeyevich, Grigoriy Valentinovich Sam ono-VI and
Iosif Ivanovich Ollkhov
Osnovy proizvodstva tverdykh splavov (Fund ntals of Carbide-Alloy Pro-
duction) Moscow,, Metallurgizdat, 1960. 232 p. Errata slip inserted.
5,200 copies printed.
Ed.: A. K. Natanson; Ed. of Publishing House: M. S. Arkhangellskaya;
Tech. Ed.: P. G. Islentlyeva.
PURPOSE: This textbook is intended for students of nonferrous metallurgy
tekhnikums, and engineers and technicians in the hard-alloy industry.
COVERAGE: The handbook was written in accordance with the course entitled
"The Production of Hard Alloys," taught at tekhnikums specializing in
nonferrous metals. It contains the funds ntals of powder metallurgy,
manufacturing processes of all types of carbide alloys, characteristics
of their properties, and inspection methods. The last section is de-
voted to the f~lnclamentals of degree design projects. This book is
C

FRAM I BOOK EXPLOITATION SOV/5227
Samsonov Grigoriy Valentinovich I Profenjot, Doctor-of_T*chn18W5ciencez3$ Lev Yakov-
levich M&rk_ov_sVy-rC_&ndid&te of Chemical Sciences],, Aleksey Fomich Zh1g&ch[DDc_
tor of Chemical Sciences]' and Mikhail Georgiyevich Valjrashko
[Doctor of Chemical Sciences]
Bor, yego soyedineniya i splavy (Boron, Its Compounds and Alloys) Kiyev,,
Izd-vo AN UkrSSR, 1960. 589.p. 3,000 copies printed.
Sponsoring Agency: Akademiya nauk Ukrainskoy sm. Justitut met&nokeramiki i
spetsi&llnykh splavov.
Ed-(Title Page): G. V. Smsonov, Professor, Doctor of Technical Science.so
Resp. Ed.: I. N. Frantsevich ' Corresponding Member of the Academy of Sciences
UkrS:M; Ed. of Pablishing House: Z. S. PbkrovskVa, T*ch. Ed.: V. Ye.
Skly'arova.
PURPOSE: This book is intended for scientific workers and engineers in the
metallurgical, machine building, chemical, and electronic industries. It may
also be used by advanced students.

Boron, Its Compounds and Alloys SOV/5227'
COVERAGE: The book describes the principles of boron geochemistry, boron stock
and its processing, and the properties,-production, and use of elementary boron,
boron hydridesyand halogens. It also includes cats on the properties, pro-
duction methods, metal science, and crystal chemistry of boron alloys with
metals and nonmetals. All knovn systems with boron are investigated and ap-
plications of boron alloys in the manufacture of fireproof alloys, in elec-
tronics and radio engineering, machine building, metallurgy, and chemistry
am discussed. Corresponding Member A. V. Nikolayev, G. V. Smsonov, and
Ya. S. Umanskiy are cited among the contributors to boron research in the
Soviet Union. The authors than the Scientific Council of the Institut
metal-lokeramiki i spetsia-tlnykh splAvov (Institute of Metal Ceramics and
Special Alloys), Academy of Sciences, UkrainslaVa SSR. They also than Prof-
essor Yu. V. Morachevskiy. Most of the chapters are accompanied by references.
TAME OF CONTENTS:
Introduction 3
Ch. 1. Geochemistry of Boron (M. G. Valyashko) 7
Ch. II. Boron Stock and Its Processing (M. G. Valyashko) 25
Card-24g

-9 S- -rj
On
14
0.
tl
V"A Al
*All H
a

27992
S/194/61/006/004/035/032
D266/D302
AUTHOR: Samsonov, G.V. and.Neshpor, V.S.
TITLE: Alloys of rare metals with bor and silicon for
some purposes of electrical and radioengineering
PERIODICAL: Referativnyy zhurnal. Avtomatika i radioelektronika,
no. 4, 1961, 3, abstract 4 G15 (V sb. Redk. metally
i splavy, M., Metallurgizdat, 1960, 392-417)
TEXT: The conditions of obtainirig.silicides.,,and borides,,of rare
metals are investigated and their.physical properties are studied
for possible application.. Thp-...silicides.are-obtained-by heating
the mixture_ of..the- compLonents...in_ powdered, f-orm,at a. pressure of
250..kg/cm2 and at a temperature of 1300.-21500C. The synthesis of
the borides is carried out by utilizing the interaction of metal
oxides with boroncarbide and car-bon in vacuum. The structure of
the obtained alloys- is. inve.stig ated.,and . their. crystal--structure is
determined. The hexaborides are distinguished by their low work
Card 1/2

27992
S/194
/61/000/004/035/052
Alloys of rAre metals... D266/D302
function and slow evaporation which shows the prospect of using
them as thermionic emitters. Their disadvantage is.the small elec-
trical resistance which makes their heating.difficult. This proper-
ty can be considerably improved by dissolving ceriumboride in them
which leads to a solid solution of high electric resistance preser-
ving the thermoelectric properties of the original borides. Z-Ab-
stracter's note: Complete translation-7
Card 2/2

18.6oo 7716o
SOV/129-6o-1-8/22
AUTHOR: Samsonov G. V._(Prof0sS0&, Doctor of Technical,
FcTe-n`c-~-~
TITLE: S.Intering of Tungsten-Titanium-Cobalt Hard Alloy
in %racuum
PERIODICAL: Metallovedeniye i termicheskaya obrabotka metallov,
1960, Nr 1, pp 25-27 (USSR)
ABSTRACT: The influence of temperature and the duration of
sintering on the degree of cobalt volatilization
as well as the effect of free carbon on sintering~
process of tungsteh-titanium carbide T15K6 process
were investigated. The poviders of the following
chemical composition were used: Nr 1-12.21% Ti;.
6.34% Co, 7.51%,C,total; 0.05% C. free; 0.41% 0.
Nr 2-13% TI; 7.48% c, total; 6.55% Co; 0 .05% C, free;
0.28% 0; 0.0075% Fe. Samples were heated in a
vacuum furnace at 1,5500 C for 15, 30, 60, and
120 min. under pressures of 0.1; 1; 10 and 100 mm
Card 1/;~17 Hg. After heating, the samples were ground to

-Sini,~erjng of Tungsten-Titanium-Cobalt Hard 7716o
Alloy In Vacuum SOV/129-6o-1-8/22
powder and the content of cobalt was determined.
The decreasing of cobalt content during sintering
at different pressures is shown in Fig. 1.
5
4
41 "V0" 03
15 10 45 6V 75 90 105 won
Fig. 1.
The decreasing-of cobalt content in carbide T15K6
during sintering at 1,5500 C in a vacuum furnaeIe.
Card 2/y

Sintering of Tungsten-Titanium-Cobalt Hard 77l6o
Alloy in Vacuum SOV/129-6o-i-8/22
The following conclusions were drawn: For
preventing volatilization of cobalt during sinter-
Ing carbide T15K In vacuum, the pressure in the
furnace must not be.below 10 mm 11g. With this
pressure and a temperature of 1,ij.00o C the structure
formation of the carbide is compl6ted viith,1n12 hours.
The carbide has high physical and mechanical
proper-ties and no porosity. In the atmosphere.of
hydrogen and at 1,5500 C, sintering lasts I to 4
hr. The addition of carbon to the Initial material
improves microstructure and physical and mechanical
properties. However, as seen from Table 2, large
additions of carbon impair the pro-perties and prolong
the sintering process.
Card 3/Y

77i6o
Sintering of Tungsten-Titanium-Cobalt Hard
Alloy In Vacuum SOV/129-6o-i-8/2-2
Tc,-61e- 2-
Relationship between the properties of carbide sin-
tered in vacuum and the free carbon content in the
mixture.
ce'.~ "a Ss
G". Re.
0 0.5 1, 2G 91,-2
0:1 31 1110, i I
3 ~Q. 7
0.2 11:
0,5 11,23
1 05 90
1,5 1 10.51. '49,7
There are 2 tables3 and 2 figures,
ASSOCIATION: Institute of Metalloceramic* and special alloys AS
Card 4/Y

6:. V,
iMooo
AUTHORS:
TITLE:
PERIODICAL:
ABSTRACT:
Card 1/7
77162
SOV/12q_6o_l_.:,,,~,4,_,2
Babich, B. N. (Engineer), Portno~, K. I,
Candidate of Technical Sciences , Sams0nDY.1_G._V._____
Nrofessor, Doctor of Technical Sci-en'ces)
Pressing and Sinteriing of Boride Powders
Metallovedeniye i termicheskaya obrabotka metallov,
1960, Nr 1, pp 31-35 (USSR)
The first investigation of the processes of pressin
9
powders of various compos'itions,was carried out in.
earlier.work (Samsonov' 0. V., Neshpor, V. S., D.A.N..
SSSRJ, vol lo4l 1955). Later on 0. A. Meerson de-
veloped a theory of sintering for plastic metals.
In this work the authors inveatigate the pressing
and sintering of (1) titanium and chromium borlde
powders, and (2) titanium and chromium borlde alloys
(ratio of molat concentration TIB :CrB = 4:1). The
initial titanium and boride powders we?e prepared
by the thermal-vacuum method, and double titanium-
chromium baride by homogenization of these.boride

Pressing and Sintering of Boride Powders 77162
SOV/129 6 o - 1 -12 1,
mixtures at 1,-(00'~C for 1 hr in a,vaouum. The size
of particles of all three powders ranged between 2 and
3 micron. Tne weight of 1 ml of powders TIB2' CrB
21
(Ti,Cr)B2 is (in grams) 0.80, 1.05, 0.97, respectively.
Pressing: The method of investigating the process of
pressing consists in studying the effect of holding
under pressure on density of compressed briquettes,,
measuring the elastic aftereffect, azid studying*
the effect on density of intermediate grating of com-
pressed briquettes. None of the tested plasticizers
markedly improved thepressibility of briquettes,
although briquette strength was at a maximum when
using F=Cl solution. Fig. 1 shows the-results of
pressing Upending on compacting pressure. The data
show that TiB2 is endowed with.the best pres~ibility.,
Card 2/7

and Sinterinj~ of Boride Powders 77162
SOV/129-6o-l-. -,/-'2
#,5z
qj

M
, - cr)
& ~11

Fig. 1. Correlation between
relative density and compacting
pressure.
yl,
YA
I z j 4 5 6 7
PreL,,,tre.
Fig. 2 shows a compacting pressure d~Aagram in
logarithmic coordinates log psp- log/I , where 13 is
'Yeompact
relative volume ?briquette I 3hbwing' that
Card 3/7

-Pressing and Sintering of Boride Powders
Gard 4/7
I/cH
7
6 CrBz
, 441~r-
5
4
ris,
7162
SOV/129 -6 o- 1 2
Fig. 2. Correlation between
relative volume and compacting
pressure.
Y 1,5 1.6 1,7 1.8 1,5 2P 2.12.2 p
the process of pressing is well expressed in straight
lines. For TiB2 log p -11.07 log 13 +3.02;
for CrB2 log pSP -3-0 N8 log /3 + 3.25; for (TiCr)
B2 log psp =-11.29 log/3 ~ 3.24 (Psp = specific
pressure). The authors conclude that the process

Pressing and Sintering of Boride Powders 77162
SOV/129-60-1-i(/~2
7
%
5
ILI
IL 4
3
2
Cr)B"
Ti8
'_
SZ-

~_ --)
7 r

451 Z J 5 8 7 Tlem:
OOft?PiLCt;n_q
1
of compacting titanium, chromium and titanium boride
solid solution powders is described by the logarithmic
relationship between relative volume and compacting
pressure. Results of determining the,elastic after-
effect are shown-in Fig. 3. The elastic aftereffect
Fig. 3. Relationship between elastic
aftereffect and compacting pressure.
Card 5/7

-Pressing and Sintering of Boride Powders 77162
SOV/129-60-1-11)/22
of the Investigated materials is of major importance
since the character of the relationship of aftereffect
and pressure is connected with high brittleness and
nonplasticity of borides. Sintering: In order to
observe sintering conditions, the bKIquettes were com-
pacted under a pressure of 3 ton/cm;~-' and sintered in a
vacuum (0.1 mm. Hg) in a retort furnace with a graphite
heater. To determine the optimum sintering tempera-
ture the specimens were sintered within the 1,700-
2,4000 C range for 1 hr. It was found that the sin-
tering process occurs in two stages: (1) minor density
increase at maximum temperatures up to 2,100-2,2000 C;
and (2) intensive density increase above these tempera-
tures. TiB boride and solid solution (Ti,Cr)B were
2 2
held at 2,3000 C while CrB was held at 2,0000 C:
The maximum density was ob~alned at.a. holding time of
120 min. As a result, the process of compacting boride
briquettes in sintering consists in drawing particles
into the pore space at temperatures qf the second stage
Card 6/7 of sinterIng at which the forces of surface tension

.Press.1-ig and Sintering of Boride Powders 77162
SOV/129-,6o-1-10/22
predominate over the strength of the particles which
became plastic. The investigation shows the possi-
bility of pressing and sintering separately, instead
of using the complex and expensive method of hot
pressing. There are 3 figures; 3 tables; and 12 ref-
erences, 10 Soviet, 1 U.S., 1 German. The U.S. r&f-
erence is: Chiotti, P., "J. Amer. Cer. Soc.", Vol 35,
1952.
Card 7/7

15(2)
LUTHORSt
TITLEs
PERIODICA.Lt
ABSTRACTs
Card 1/2
S/131/60/000/01/011/017
0 V Yasinskaya,G.A., B015/BOOI,
Tay Shou-vey
Crucibles of Difficultly Fusible Carbides, Borides, and
Nitrides
Ogneupory, 1960, Nr It PP 35 38.(USSR)
In this paper, the authors mention the results of the ex-
perimental use of the above crucibles for the melting of me-
tals. Figure I shows the scheme of the mold for hot-pressing
the orucibles,,and figure 2 the finished crucibles. The ex-
perimental results are shownin the table. Crucibles of
TiC, T .iN, TiB2, T'B2'+ 5% go, and CrB2 were investigated.The
interaction between the crucible materials and the molten
metals and slags, respectively, can be seen on miorophoto-
graphs (Figs 3 and 4). The experiments showed that all
crucibles are sufficiently stable to the effect of molten
tin, bismuth, cadmium, and lead. Crucibles of chromic boride
and of the a 'lloy of TiB2 with molybdenum are stable to the
effect of molten carbon steel and cast iron. Crucibles of

Crucibles of Difficultly Fusible Carbides, S/131/60/000/01/011/017
Borides, and Nitrides B015/BOO1
titanium oarbide are the -~lost stableto the effect of slags.
There are 4 figures, I tablep and 5 Soviet references. V/
ASSOCIATION: Institut metallokeramiki i spetsiall,nykh splavov AN USSR
(Institute of Powder Metallurgy and Special.Alloys of the
loademy of Sciences of the Ukrainskaya, SSR). Institut metallov
AN KNR (Institute of Metals of the Academy of Sciences of the
People's Republic of China)
Card 2/2

83278
0 S/021/60/000/001/008/013
A158/AM
.?6. /dOO
AUTHORS.- Tay Shou-Vey,, Yasyns'ka, H.A.1 Samsonov, &.V.
T Interaction of Chromium Boride Witb Molybdenum
FERIODIC-AL,;- Dopovidi Akademiyi nauk Ukrayingkoyi -Radyanslkoyi Sotsialistychnoyi
Respubliky, 1960, No. 1, pp. 48 - 50
TEXY: Properties of alloys in a pseudo-binary system CrB2-Mo were inves-.
tigated by means of metallographic, thermal and dilatometric analyses, measure-
ment of shrinkage during sintering, electrical resistance and thermal emf. Al-
loys were made from powdered chromium boridecontaining 69.8~% of Cr, 29.7% of B
and 0.42% of C; Powdered molybdenum had a 99.98% purkt~y. The melting curve
(Fig. 1) was drawn upon the results otsa-ved. at melting samples pressed from Cr_B2
and Mo-powders, that contained.0.5. 1, 2, 5, 10, 20, 30, 40. 5o, 6o, 70, 80, 90,
95, 98, 99, 99.5 and 100 molecular % (or atomic %) of each component, when they
were heated uo to 1,400 - 2,2000C. Maximum electrical resistance was found in
alloys containing 70 molecular % of CrB~:) (107 microohms per cm). The swine alloys
showed the highest thermal emf (7 mkv/degree) and the highest negative shrinkage
at sintering. A new chemica-1. compound Cr24oB4 was found which melted congruently
Card 1/2

83278
3/021/60/000/001/008/013
Interaction of Chromium Boride With Molybdenum A158/AO29
at 2,2700C. Its microhardness (in alloys containing from 30 to 90 molecular % of
CrB2) is constant at a value of 1,828 + 92 kg/rrLM2. The diagram of a pseudo-binary
system CrB2-Mo is eutectica.1, with two euttectics at 17 molecular % of CrE2
1,9600C) and 94 molecular % of CrB~:, (--2,1200C), and little mutual solubility of
the components in a solid state. There are 2 figures and 4 referencest 3 Soviet
and I English.
ASSOCIATIONz Instytut metalokeramiky i spetalarnykh splaviv AN UkrS.9R C~n_stitute
of Metalloceramics and Sp,--oial Alloys, AS UkrSSR)
PM-SENTED: by V.M. Svyecb-nykov, Academician of the AS UkrSSR
.SUBMIPMD,. April 16, 191:
.,g
Card 2/2

S/18o/6o/ooO/02/017/028
E111/E152
AUTHORS: Kovallchanko, X.S.93 Samsonov, G,V.9 and Yasinskaya, G.A.
Miye-,~ - ---------
TITLE.- Alloys of Transition-Element Bo--ides with Other Metals
PERIODICAL: Izvestiya Akademii,, nauk SSSR) Otdeleniye teklmicheskikh
naukq Metallurglya i toplivo 1196o Nr 2, pp 115-119 (USSR)
ABSTRACT: The high brlttlenes.~-of transition-metal borides limits
the application (Ref,-,3) of some oftheir useful
properties (Refs 1, 2).'. , The authors suggest that it is
therefore important',to.study-their pseudo-binary alloys
with., ductile metals Creep tests at 1000 0C. (4of 4)
showed that few metttls~wete suitable fo r'high-temperature
uset. Ternary borid8~*-*p~as'es, which might be
advantageous (Ref 5)~ have not been studied much
(Refs 6-8).. In.thepresent work the reaction of borides
with metals in thq-pseudo-binary systems,was.,
o, -,TiB2-Cr and ZrB2-CT'
-Y' gEP2-~Moi,1 T Bp!o-,4PLB244
Alloys were prepardd~by sintering!,the mixed.'powders.,
Approximate determi~tion~-.6fliquidus lines was-made
Card visually (Ref 10),."&1loy melting'points also being
1/2 determined (Ref 11 ).~to fix its position more:precisely

S/180/60/000/02/017/028
Z111/3152
Alloys of Transition-Element Borides with Other Metals
In addition micro-dnd.macro-hardness determinations of
phases were made together with metallographic a-i X-ray
examinations, The hypotectic diagrams for the above
systems are given in Figs 1~ 27 31 1+ and 5 respectively.
Tay Shou-bey of the Institut Metallov AN MM (Institute
of Metals Academy of Sciences CPR), G.N. Makarenko and
V.I. Kostikov participated in the experimental work.
Card There are 5 figures and 12 references~ of which 8 ar
2/2 Soviet Iand 4 English. (0

SA14SONOV. G. V.
iiiin-d-f-erroboron from colemanite by the out-of-furnace
aluminothermic processe Vope poro met. i prochn. Mt. n0.8:8-23
l6o. (MM 13:8)
(Iron-Boron alloys-Netallurg7.)
(AlnminothermV)

qq 1
28311 S/081/61/000/016/018/040
B143/B101
AUTHORS. Samsonon.G. V., Paderno, Yu. B., Fomenko, V. S.
TITLE: Production and some properties of neodymium hexaboride
PERIODICAL: Referativnyy zhurnal~ Khimiyaj no. 16, 1961, 87, abstract
1695 (Sb. "Vopr. poroshk. metallurgii i prochnosti materialov',1
Kiyev, AN USSR, no.--8, 1960, 66 - 68)
TEXT. Two methods of NdB6 production by means of the reactions
Nd203 + 3B4C 2NdB 6 + NO and Nd 203 + 15B----),2NdB 6 + 3B0 were described.
In both cases the process took place in a vacuum furnace with graphite
heater in the temperature interval 1loo - -woo0c, with permanent removal
of the gaseous reaction proaucts. The completeness of the reaction was
checked by X-ray pictures and analytically as well as according to the
yield. In both cases the holding time for the optimum production process
of NdB6 at 16oo - 16500C is one hour. NdB 6 is a finely disperse dark blue
powder, the parameter of the crystal lattice is a 4.1242. Compact NdB 6
Card 1/2
- ----- ----- --

28311 S/081/61/000/016/018/040
Production and some ... B143/B101
is obtained from powder by the method of hot pressing. The optimum holding
time was 15 - 20 min at 20000C at a pressure of 175 - 200 kg/cm2. In this
case minimum porosity of the compact NdB 6was 3,j4. The resistivity of NdB 6
is 28 pohm-cm. Studies of the ther.L,cpelectromotive force,of NdB 6 paired as
a thex~mocouple with Pt in the interval 20 - 7000C gave a negative value of
the coefficient of thermoelectromotive force whose absolute amount
slightly increases with increasing temperature. The radiation coefficient
of KdB 6 is 0.7 (at 16oooc). The microhardness of NdB 6 at an indentor load
of 70 g was 2540 t 170 kg /mm2, the melting temperature of NdB was 25400C.
6
The work function of the electrons in thermionic emission is 3.97 ev,
LAbstracter's note: Complete translation]
Card 2/2

27756 7/054/086
S~058/61/000/00
A001/A101
AUTHORS: Samsonov, G.V.J. Neshpor-, V.S.
TITLEi On the problem of magnetic properties of metal-like compyands,
PERIODICAL: Referativnyy.zhurnal. Fizika, no. 7, 1961, 282, abBtract r-472'(V
sb. "Vopr. poroshik.-metallurgii i prochnosti materialov", no. 8.
Kiyey, AN UkrSSR, 19060, 90 -.98)
*~sults of investigating magnetic pr perties of compounds of
MT- The r 0
transition elem.ents viii;h C, N, B and Si make it pozsible to judge on.the nature
of interatomic bonds in these compounds. The data known in literature on mole-
cular susceptibility ~e . and magnetic moment of metallic ions are zwesented.
The Zm and J-Cf value-:: of the studied compounds, reduced in comparison with the
values of the pure metalz, indicza:te the formation in these compotunds of a collec-
tive of electrons filling.the overlapped dsp- band in the erjstal. The redue-
tion degree of Y_m is releted to the ienization Potential magnitude of the metal-
loid. In the case of hexabr-rides of rare earths there is no decrease ef
Card-1/2

27756
S/058//-,- 1/000,,"007,,/054/o86
On the problem of magnetio propertiez kOO 11A 10 1
since the incomp'--ste 4f-zk-eil is h-7 outer 6a- and 5d-eleotxono. 1111he
data are presen-II-ed er, terk-perat-arre dependenae of 9e, in hexaborides of rare eax-tbs,
_SnjeZ-~,~e of .-A-m for some carbides, boriiez and
as well as or, the oc,nf-,e7-t.-ra4j.:.M de-
nitrides.
L. Boyarskly
[Abstraelver'3 rictre: Compl-ite tratzalatio'n]
Card 2/2

sl",%:7501,(Jv, G 1;
Electronic stn ctura arx: rw,,artl Cs 0i, r-itrie'es o
Zhur. stndkt. MiLm. I no, 4:/,/,./-45,2 F-DI CC.
l1,:2)
U
1. Institut motallo'7cra.-Ild i
1'.1 e Os

SX-30NOV, G.V.; ZDIUR VIL."N, I-IJI.; RAX.MTO, Yu.B.; SHTILISHOV.~, 0.1.
T.T.
Interacticn of Gallium, -indium, thalliung ger.---anivmp tinp and
lead irith boron. Zhur. strukt. khim. 1 no. 4:45E-463 17-D 160.
1. Institut notallo.1:arami1ki i spetsialInykh splavov,M' U1.35F9
(Boron) (1-letals)

82988
S/181/60/002/008/007/045
B006/BO70
24,
AUTHORS: Kislyyq P. WL.IamsonoY, G. V-
TITLE: The Diffusion of,-Boron in,Carbon
PERIODICAL: Fizika tverdogo telay,1960, Vol. 2. No. 89 PP.- 1729-1732
TEXT: The authors have.already performed preliminary.experiments. on the
diffusion of boron in graphite and investigations of- the properties of
the 'Q ~rjgArlk&Aobtained in-this-way. 'It Is found that by the
diffusion of boron in graphite alloys aie-obtained which show greater
solidity and lower brittleness than broron carbide obtained by compression
under-heat. These'alloyi have semiconductor properties, and can'be
utilized for the preparation of high temperature thermocoupl'es.- By the
diffusion of boron into the 'surface of gra7phit-er'samples, their corrosion
resistance becomes noticeably higher, particularly at higher temperatures
(Refs. 1-5)-. The-purpose of the' present work 'was to investigate the
mechaftism of diffusion and to determine its parameters. The object
investigated was a cylindrical sample of spectroscopically pure g2aphite
Card 1/3

U988
The Diffusion of Boron in Carbon S11SX601002100810071045
B006 B070
onto whose surface a 2 mm thick layer of a paste of amor.Rhous boron was
applied. After the samples had been dried at 1500C~'they were enclosed in
a,graphite shell and preheated in.an atmosphere of hydrogen (700 - 8000c,
60 - 80 min). After this treatment the samples were subjected to
metallographic, chemical, and X-ray analyses.,Further, the reverse
process of,diffusion of carbon in boron was-investigated. For, this
purpose, boron samples of a-porosity of 36% were employed. They were
prepared by.compression 'of boron.powder and sintering at 19000C.-In this
case there resulted a saturation of the~carbon samples.with carbon-in 30
minutes in a vacuum oven at 19400C. Experiments showed that in similar
conditions the boron .penetrates deeper in 'carbon (1-4 1.6 mm) than
cirbon does in boron (0.6 - O.'18mm). This indicates a remarkably higher
mobility of bbron atoms. The diffusion coefficients were calculated to
be 6.2-10-6cm2 _10-6CM2 /see (C-4B). Numerical data for'
/see ZB-tC) and 1.8
two samples showing boron content at different depths of the carbon
sample (chemical analysis) are given in Table 1. Their graphical
representation is given in'Fig. 2. The boron~concentration.diminlshes
exponentially with depth. That a solid solution is formed due to
Card 2/3
m~

82988
The Diffusion of Boron in Carbon S/181/60/002/008/007/045
B006/BO70
diffusion, is shown by an X-ray analysis. Here the interplanar spacings
of graphite lattice are measured,as function of boron concentration
(Fig.,3). Further, the temperature dependence of diffusion of boron in
graphite is investigated (Fig-4). D =.3.02 exp(-28625/T) is found t0
hold. Numerical values are given-in Table 2..There are 4 figures, 2
tables, and 6 Soviet references.
.ASSOCIATION: Institut metallokeramiki i.speisialln'kh Bplavov AN USSR-
y
(Institute of Powder Metallurgy and Special Alloys of the
AS UkrSSR)
SUBMITTED: October 20, 1959
Card 3/3

S/1811/60/01'020~010 9/0 2 5103 6
~F, V1 73 B004/BO56
AUTHORS: Neshpor., V. S.9 Samsonov~ G". V.
A
TITLE: Investigation of the Electrical Conductivity of Silicides
of the Transition Metals
PERIODICAL: Fizika tverdogo tela,11960, Vol. 2, No., 9, pp. 2202 2209
TEXT: A report is given on the potentiometric measurement of the speci-
fic electric resistance of silicides of d- and fd-metals of groups
IV - VIII of the periodic system as a function of their silicon content
The results obtained are given in a table. The temperature dependence
of the electric resistance was measured on the disilicides of Ti, Nb,
W, Mo, Re, and Lay as well as on silicides of Mo with different Si-con-
tent, and on partly Al-substituted Si (Figs. 1,2). Fig. 3 shows the
electric resistance-of. LaSi 2 as a fun ction of temperatureo and Fig. 4
the electric resistande ofzdisilicides of transition mkals of groups V~-
IV - VI as a function of the acceptor properties jMe = '/Ndndo.where
N is the main quantum number of the d-shell of the metal atom, and n is
d d
Card 113

84084
Investigation of the Electrical Conductivity S/Ial/60/002/009/025/036
of Silicides of the Transition Metals B004/BO56
the number of d-electrons in the free metal. The majority of the sili-
cates investigated were metallic conductors with the exception of the
disilicides of Ba, Crq,Fe~ Re, and Mn, which are semiconductors. In
Me ~ Si systems-p in which the highest silicide (MeSi 2)"has metal conduc-
tivity, the electric resistance of the intermediate silicides decreases
with,increasing Si content;; If, however, the highest silicide is a semi-
condqctor, the reverse,"behavior is observed. The electric resistance of
the disilicides of groups IV -,VI is.a function of.the acceptor property'
rofthe d-shell of the metalatom. The highest electric resistance was
measured at VSi 2 (TV = 0.111). With 1Me>JV the resistance.of the di-
silicides decreases with inc .reasing justas in.the-case of carbides,
Re
nitrideaq and borides ofthe trans ition metals. With TMe< f V, the beha-
vior is reversed like in the case of pure metals. The resistance of the
disilicides of rare earths (fd-transition metals) is considerably higher
than that of the disilicides of d-transition metals. L. Yudina, student
___7Lf vov State
at Llvovskiy gosudarstvennyy universitet im. I. Frank,o - -_I.
University imeni I. Franko).took part in the experiments. There are
Card 2/3

84084
Investigation of the Electrical'Conductivity sliB11601002100910251036,
of Silicides of the Transition Metals B004/-BO56
4 figures, 1 table, and 24 references: 17 Soviet, 1 US, 2 British,
1 German, and 1 Australian.
ASSOCIATION: Institut metallokeramiki i spetsiallnykh splavov AN USSR,
Kiyev (Institute of Powder Metalluigy and Special Alloys
of the AS UkrSSR, Kiyer)
SUBMITTED: November 9, 1959
Card 3/3

2o615
9, Y 3,00 PMAY)
3/063/60/005/005/004/021
III 5-T-, I Is-% A051/AO29
24-1100
AUTHOR: Samsonov2 G.V., Professor
TITLEt New High-Temperature Semiconductors and Their Application
PERIODICAL: Zhurnal Vsesoyuznogo Xhimicheskogo Obshchestva im. D.I. Mende-
leyeva, 1960, No. 5, Vol. 5, pp. 515-521
TEXT: With the development of high-temperature processes in chemistry, me-
tallurgy, power engineering, etc., the need forsemiconductor materials and
apparatus reliable for exploitation under conditions of high temperat-ares'
and aggressive media or mechanical dtress has arisen. Modern techniques
also demdnd the production ofhigh-capacity thermogenerators with a high ef-
ficiency factor for the direct transformation of heat liberated in the burn-
ing of cheap natural gas, operation of reactors and in burning of ordinary'
fuels to electric energy. For this purpose semiconductor materials with a
melting point of 2,000-2, .500 OC are required. This is-accomplished by using
the metals of the transition group of the periodic table of elements to-
Card 1/ V

20615
B/06 60/005/005/004/021
A051Y4029
New High-Temperature Semiconductors and Their Application
gether with non-metals: boron, carbon, nitrogen,-silicon, or.by direct com-
bination of the non-metals. The chemical stability and the electrical and
magnetic properties of these compounds are determined by the.participation
of the electrons of the incompletely built d-shell of the transition metal
in the chemical bond in addition to the valency electrons. The unique crys-
tal structure of these compounds brings about the high melting point, hard-
ness and heat-resistance. All these compounds are characterized by heter*o-*.
desmic properties. The polarizing or accepting tendency of the transition
metal atom, indicating the extent of the effect of the unfilled d-electron
level on the distribution of the electron concentration in the crystal, is
expressed by the relationship 1/Nn, where N is the quantum number of the
d level, and n the number of electrons. Table 1 lists the electrophysical
properties of silicides of transition metals, where the I/Kn criterion va-
ries according to-the transition metal. An increase in this criterion,
generally, would cause a shift of the:relative maximum of the electron dens-
ity toward the shells of the transition metal atoms, and this shift would be
Card 2/17

2o615
S/663/60/005/005/004/021
A0511A029
New High-Temperature Semiconductors and Their Application
the much greater, the less the ionization potentials of the valency elec-
trons of the non-metal atoms. In oases,where conditions are created for a
sharply defined asymmetry of the electron density distribution# energy
breaks in the crystals take place, and zones of forbidden states of lesser
or greater width occur, and these circumstances can cause semiconductor pro-
perties. A change in the electronic density cauoes.an increase of the ion
bond fraction expressed through the general shift of the electron collective
toward the direction of the non-metal atom shells, and the formation of
energy breaks sufficient for the occurrence of semiconductor properties.
With a decrease in the ionization potential of the metalloid (when changing
to carbon), the valency electrons of the latter lend themselves more readily
y
to bonding and the position of the relative maximum of the electron concen-
tration shifts towards the metal atom, increasing with an increase in the
value of 1/Nn. It is pointed out that,the addition of metal atoms and non-
metals takes place by collectivized electrons, the zones of the s-,d-, and
p-electron energy states overlap, and so semiconductor properties canhot.be
Card 3A7

2o615
S/063/60/005/005/004/021
A051/1029
New High-Temperature Semiconductors and Their Application
expected in most carbides. Experiments have .proven this difficulty (Ref.8-
10). When shifting to the borides, the unity of the electron collective is
maintained. The author further describes the borides as being compounds
with a primarily metal nature of its bond And a metal type of conductivity.
(Ref,6-10). Fig.1 is a diagram of the structural elements of silicon atoms
in silicide lattices. Regarding thi latter, semiconducting properties were
detected in chromium, iron, nickel, manganese.and rhenium. silicide (Ref.6,8,
11,12). The author claims that the semiconductor properties of the silicid-
es have the highest practical significance eCt the present time. All sili-
aide systems are divide& into two groups according to the relationship of
the electric resistance and the atomic content of silicon (Fig.2)s 1) sili-
cides forming Ti. Zr, V, Ta. W and No compounds, 2) those forming Cr, Fe,
Re, Mn compounds (Table 1). It is found that the electric resistance of the
silicide phases in the systems Me-Si follows a certain rules with an in-
crease in the silicon content it increases in the systems, where the higher
silicide is a semiconductor, and decreases where the higher silicide has a
Card 4/17

20615
S/063/60/005/005/004/021
A051/A029
New High-Temperature Semiconductors and Their Application
metal conductivity. The reason for this rule is the fact that in systems
with metal compounds the Atoms of the metalloids, although forming covalent
bonds with one another, their bond with the metals has a metallic nature and
is achieved by the electron collective. A drop in the electric resistance
of the silicides with an increase in temperature is explained mainly by the
expansion of the elementary nucleus causing a lesser coverage of the zones
(Ref-7). in order to find and produce semicondue'tors-with predetermined
properties, it is important that the nature of the conductivity of the sili-
cides,as well as othercompounds of the same type be'determined not by the
interaction between the metal atoms, suggested in certain articles (Ref. 15),
but mostly by the nature of the bond between atoms of the metal and non-me-
tal, which determines the degree of filling of the energy bands in the crys-
tal of the compound. In discussing the second large group of difficultly
fusible compounds (non-metal compounds of silicon and-boron with carbon and
nitrogen, boron and silicon$ and their respective alloys)*it is noted that
this group is represented exclusively by semiconductor phases, which have
Card 5/ 17

20615
S/063/60/005/005/004/0211
A051/~029
New High-Temperature Semiconductors and Their Application

already found practical application. Carbon and boron, and also the com-
pounds of boron and silicon combined with phosphorus,,and of aluminum with
boron, belong to this group. The main characteristic of these compounds is
the formation of covalent bonds between atoms in the composition of their
non-metals. This leads to the formation of linear, chain, laminated or ske-
leton elements of non-metallic atoms from one or several kinds in their
crystal structures. The special features of the semiconductor properties.of
the non-metal compounds are determined by the ability of the non-metal atom
to give off the 'external electrons for bonding, which in the first approxi-
mation is evaluated by the magnitude of the ionization potential of the non-
metal atom. The same was noted for pure crystals from.-non-metals (Table 3).
From here it is seen that the break between the permitted energy levels in-
creases with an increase in the ionization potential of the non-metal atom,
i.e., with an increase of the ion component of the bond. In non-metal dif-
ficultly fusible compounds the width of the forbidden zone increases with an
increase of the ionization potentials of the components. Silicon carbide,
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20615
S/063J60/005/005/004/021
A051/AO29
New High-Temperature Semiconductors and Their Application
SiC, is further discussed as being the.most investigated compound of this
type, and the formation of the n-conductivity in it is described. Fig-,3--
shows a typical curve of the relationship between the electroresistance of
the SiC admixture and the temperature (Ref.16). At the present time it has
definitely been established that two chemical compounds exist in the system
boron-carbont B C (B C) and B C (B. C) and the eXiBt8nCe_Of two other
3i2 t&5
compounds is asIlUad 4(Ref,20)'. n area rich in boron, B C, -aind in the
area rich in carbon, BC . All"the alloys of boron and Icarbol 2possess semi-
Rereby the greatest thermal emf are noted in defect-
conductor propertiesq w
ive structures based on'c'Ompounds of B 32 C and B C . The specific electric
resistance of the latter is of the ord r9f 1 anj3 110 ohm.cm; its relation-
ship to temperature was.studied-only for B C up to 2,1000C, and it was e5- -
4
tablished that this carbide has a width ofIthe forbidden zone equalling 1.64
ev and changes to self-conductivity at 1,400-1P4500C. A future commercial
use is expected for silicon nitride as a high-temperature material. Boron-
nitride, known in two modificationss similar to the structure of graphite
Card 7/17

S/063/00/005/005/004./621
A051/AO29
New High-Temperature Semiconductors and Their Application
(Fig-4) and to cubic diamond-like structure, is also considered as a high-
temperature semiconductor. The properties.of only the ordinary graphite-
like boron nitride have been studied until now. The'alloys of boron and
silicon (Ref.24) have also semiconductor properties and have the outstanding
feature of possessing a high heat-reaistance slid chemical stability in acid
and alkaline media. The semiconductor properties of boron have been more
carefully studied in recent times'. (Ref.25). 'A,study of the Hall effect,
the thermal eaf and rectifying properties of the boron singlecrystali ha's
shown that at high temperatures the crystals are hole conductors I and at low
temperatures the low-ohm crystals have an electronic admixture conductivity.
At room temperature boron reveals.effects of current rectification and pho-
toconductivity. Scientific interest is expressed in the electrical proper-
ties of boron -o~Tjp~ide, BP, belonging to the class of semiconductor com.7!
pounds of the A B typey and also in certain phosphides and sulfides of
the d- and f-transition metals. Yariation in the electrical stability and
chemical properties can be attained by using the alloys of metal-like com-
Card 8/17

2o615
S/063/60/005/005/004/021
A051/iO29
New High-Temperature Semiconductors and Their Application
pounds not having semiconducting properties,,together with semiconductor si-
liciles or with non-metal semiconductors, and also alloys of non-metal dif-
ficultly fusible compounds. The alloy of boron carbide with molybdenum si-
licide is discu'ssed,as belonging to the class of Novotny phases with a widen
range of homogeneity. These types of semiconductor phases are used for
junctions in thermocouples intended for the direct measuring of temperatures
of chemically-aggressive substances molten metals, slag, and gases heated
to very high temperatures (Fig.6). In the thermocouples 'T1--1(PT-1),_ffT_-2
(PT-2),TrT-3(PT-3),TrT-4(PT-4) manufactured today, the external cover is
made of molybdenum silicide, zirconium boride, titanium carbide and titanium
boride, respectively. The internal rod is made of borinated graphite, which
is found to be technically more convenient than using rods made of boron
carbide. Thermocouples made of molybdenum and rhenium silicide, of which,
the first has metallic conductivity and the second is a semiconductor, are
considered to have great prospects for the future. Further interest is re-
vealed in silicon and boron nitrides as high-temperature thermistors and as
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206.15
S/063/60/005/005/004/021
A051/AO29
New High-Temperature Semiconductors and Their Application
part of so-called non-wire or volume resistors (Fig.8). Wave-guide absorb-.
ers are made of silicon carbide. The range of the positive coefficient of
the electric-resistance of the silicon carbide admixture (600-1,5000C) is.
used in the operation of high-temperature carborundum,heaters for electric
resistance furnaces. High-temperature semiconductors based on silicon car-
bide are also used extensively as sources of infra-red radiation in spectro-
scopy and drying. The semiconductor properties of boron carbide are applied
in automation, electrical engineering, for producing resistors compensating
for the effect of temperaturechange of the surrounding medium on the show-
ings of magnetic-electrical systems inelectric-measuring devices (Ref.29).
Compounds of silicon and boron carbide are considered useful materials for
producing high-ohm volume resistors (Ref.33)- By,developing a production
method of silicon carbide and of boron carbide single crystals of high pur-
ity, the latter could be used in industry,as first-class rectifiers. There
are 3 tables, 3 diagrams, 1 photograph, 4ftgures and 33 referencest 25,
Soviet, 8 English.
Card 10/19

S&AJO
S/078/60/005/006/012/018
B004/B052
AUTHORS: Vereykina, L. L.f Samsonov, G.'V.

TITLE: A Simple Method of Producing Titanium Phosphides
PERIODICAL: Zhurnal neorgaiiiehaskoy,khimii, 1960, Vol. 5, No. 6,
pp. 1888-1689
TEXT: The authors give a brief description of western papers on
titanium phosphides (Refs. 1-- 6). They investigated the reaction of
titanium powder and PH3 in an apparatus depicted in a Fig - PH, was
i
produced by igniting a stoichiometric mixture of aluminum pow
er and
red phosphorus in a steel cylinder by.means of a magnesium band. I The
aluminum phosphide was decomposed by intensive cooling with a 1 q0 H2S04
solution in argon free from oxygen, and the mixture of argon and PH3
was conducted over a quartz boat containing the titanium powder. The
analysis of titanium phosphide was conducted according to a method by
0. 1. Popova and 0. G. Seraya. The phosphide was dissolved in a mixture
of HN03 and HF, the titanium was combined by a tartaric acid complex,
Card 1/2

8
A Simple Method of Producing Titanium S/07 V601005100810121018
Phosphides B004/BO52
and the phosphorus was precipitated as phosphomolybdic acid. The results
are listed in a Table. The development of titanium Dhosphide only sets
in at 7000C. Ti2P develops at 8000C after 6 h, and TiP at 8500C. The
development of Ti~P, assumed by the authors, must yet be proved by
further investigations. There are I figure, 1 table, and 6 non-Soviet
references.
ASSOCIATION: Institut metallokeramiki i spetsialfnykh splavov,
Akademii nauk USSR, Laboratoriya tugoplavkikh materialov
(Institute of Cermets and Special-Alloys of the Academy
of Sciences, UkrSSR, Laboratory for
Materials)
SUBMITTED: July 9, 1959
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S/078/60/005/008/017/018
B004/BO52
AUTHORS: Paderno, Yu. B., Samsonov, G. V.
TITLE: Borides of the Metals of Rare Earths
PERIODICkL: Zhurnal neorganicheski-,j-,khimii, 1960, Vol. 5, No. 8,
pp. 1914-1915
TEXT: The authors criticize a pape r by N. N. Tvorogo on "Investigation
of Hexaborides of Rare Earths and Yttrium" published in the "Zhurnal
neorganicheskoy khimii". 1959, Vol- 4, PP- 1961-1966: (1) Tvorogov states
that he used boron carbide containing 72.61% of B, whilehis reaction
equations are only applicable for B4C with 78.3% of B; (2) the
experimental temperatures described, are unintelligible from the view-
point of the formation kinetics of borides; (3) the data of the
chemical analyses confirm the development of hexaboridealllwhile the
radiographic analysis proves the existence of:several phases. Therefore,
the chemical analyses are dubious; (4) the lattice constants of
hexaborides and the pycnometrically determined densities are also doubted.
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Borides of the Metals of Rare Earths S/078/60/005/006/0*17/018
BOO4/BO52
(5) The published data are incomplete. Finally, the authors report that
they produced thulium tetraborid;Aby reducing thulium oxide by means of.
boron at 1600 - 21000C. The respective lattice constants are given.
There are 13 references: 10 Soviet, 1 US, and 2 Czechoslovakian.
ASSOCIATION: Institut metallokeramiki i spetsiallnykh splavov
Akademii nauk USSR (Institute of Cermets and Speninl
Alloys of the Academy of ciences UkrSSR)
SUBMITTED: November 13, 1959
Card 2/2

83127
5'.Z2 20 S/078/60/005/009/010/017
BO115/PO64
AUTHORS: Portnoy, Ko I*, Samsonov, Go Vo, Solonnikova, L. A.
A
TITLE-. Melts in the S stem, ron--;- Silicon arbon,
y No A
PERIODICAL: Zhurnal neorganicheeko khimii, 1960~ Vol- 5, No- 9,
Y
pp. 2032-2041
TEXT The conditions of synthesis and properties of some B-Si-C melts were
determined by microscopic-, X-ray-, microanalytical-, and chemical analyses,
and the melting temperature and electrical proptities of the melts
B C-51 and SiC-B were determined. On investigating B C-Si melts, chemical
4 4
afialyses (Table 1) showed that a silicon content is found in the mixture
which is close to the theoretioal value of,25-35 wt% Si..When determining
the specific weight (Table 2) a maximum value was found to be attained at
30% Si, which may.be traced back to the formation of a-new phase
with denser pact,-; ng. At0an Si content of 10-50% the melting poijqt varies
between 22000 and 2400 C, to decrease at 70% Si to 160CP-1700*C.~ At an
Si content of approximately 25 wt% in the alloy, a hardness maximum of about
7600 kg/mm2 was found to exist, where also a maximum of electrical resist-
ance, and a minimum of therso-electromotive force was determined, and-the
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83127
Melts in the System Boron Silicon Carbon S/078 60/005/009/010/017
B015 B064
alloys exhibit semicon ductor Iproperties. B4C-Si alloys with 25 50% Si
(Table 3) proved to be most heatresistant. A ternary compound B sic was
5 1 2
assumed to be presento Similar results were also obtained with SiC_B
alloys (Tabl es 4-6),, and the formation of the ternary compound B3Si 2C2
was assumed. Both alloys were found to possess semiconductor properties,
with the thermo-electromotive force of the mentioned new compounds reach, LA
ing values of 150-200 pb/degree. A.-A.-Kaiini a, Fo 1. Shamray, and
1B. Fo Ormont et al. are mentioned in the paper. There are 13 figures,
6 t~ib-ies, and 25 references: 17 3)viet, I German, US, and I British.
ASSOCIATION: Tsesoyuznyy institut aviatsionnykh materialov-(All-Union
Institute-for Aviation Materials). Institut met.allokeramiki
i spetsiallnykh splavov Akademii nauk USSR (Institute of
Powder Metallurk-1 and Special Alloys of the Academy of
Sciences of the UkrSSR)
SUBMITTED: June 4, 190
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S/051/60/008/03/026/038
E201/9191~
AUTHORS: Serebryakova, T.I., Paderno,,Yu.B., and Samsonov, G.V.
TITLE: The Emissivities of Powdersl%of Some Refractory Compounds,
PERIODICAL: Optika i spektroskopiya7 1960,.Vol.81 Nr.3,
pp 410_ 1+12 (USSR)
ABSTRACT: The authors report measurements of the emissivities of
~p
powders of boridesIVIcArb and nitrides" f refractory
j,"SA
and rare-earth metals. Measurements were carried out with
an instrument shown in a figure on p 1+10. This instrument
simulated closely an absolute black body. A tantalum
cylinder 5 (20 mm diameter, 50 mm height),served as a
heater. Inside the cylinder 5 there was another smaller
tantalum cylinder.6 (8 mm diameter, 20 mm height) which
was placed concentrically with the cylinder 5.. In each of
the cylinders there was a.small aperture and these
apertures were aligned horizontally. The lower ends of
the two tantalum cylinders were fixed to a molybdenum
plate L~ which was pressed against the cylinder 5 by a
spring. The.whole instrument was-enclosed in a.glass
Card bulb 1. The inner cylinder 6 was coated with 100 ji thick
1/2, layer of paste prepared from a fine powder (particles of

S/051/60/008/03/026/038
E201/Elgl
The Emissivities of Powders. of Some Refractory Compounds
2-3 p diameter) of the refractory material mixed with a
binder. Temperature of the inner cylinder surface (the
brightness temperature7 TO and temperature in the aligned
apertures (the true temperature Tt) were measured with an
pyrometer OPPIR-09. Absorption in the glass bulb was
found to be negligible. The emission intensities were
measured at 650 m1i and the emissivities werecalculated
using the following formulat
(I L
n e'X Tt.- Tb
where c 1.438 cm/deg and X ia the wavelength. The
measured emissivities:of pure tantalum at temperatures from
800 to 2000 OG agreed well with the published values
(Table 1). he mea Isured emissivities of-1LaB6,'vINdB6,'1LMB&~
1~ GdB6)Y'YB6, V;rBa -AH02, Bi+C Ill TiC I"Cr7C3 and BN powders. at
-temper- res frolm-850 to 1'56-0C - n
Card atu. 6 are listed i Table 2.
2/2 There are 1 figure, 2 tables and 6 referencesq of which
3 are Soviet, 2 English and 1 German.
SUBMITTED: August 8, 1959

85049~
77 OD 10 9 1, 1 1 TT 9 0,,(7 s/126/6o/olO/004/022/023
z 7 1,11 j'o E073/E435
AUTHORS: Paderno, Yu.B., Samsonov, G.V. and Fomenko, V.S.
TITLE: Electrical Propertie of Lanthanum Boride
PERIODICAL: Fizika metallov i metallovedeniye, 196o, Vol.10, No.4,
pp.633-635
TEXT: To determine the dependence of the electric resistance on
the porosity for hexaborides of rare earth metals, the authors
produced specimens of lanthanyxn.boride with a porosity between
2 and 37%, increasing by~steps of 1 to 2%. The specimens were of
6 nwi diameter, 10 mm length. The measurements were-carried out by
the compensation method by mea 9 s of a potentiometer. The obtained
results (resistance,. P x lo- versus porosity, percent) are.
plotted in Fig.l. in the same figure, the following relations are.
also plotted which are applied by various "uthors (Refs.1 to 5) in
calculating values of the electric resistance of porous specimens:
Po = P(i - P) 3-5 (1)
P0 = P (l - P)3 (2)
P 2 - 3P (3)
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85049
S/126/6o/olo/oo4/o22/023
E073/E435
Electrical Properties of Lanthanum Boride
P 0 = P(i P) (4)
P 0 = Pexp(
These dependences were obtained for the~conductivity of a mixture
of phases. In the case-under consideration, the specimen can be
considered as consisting ,of two phases, the compact material and
cavities. It was found that the experimental results agree best
with those obtained by Eq.(2) of Landau and Lifshits (Ref.2)
although this equation was derived on the assumption that the
difference between the conductivities of the phases was low. As..
was to be anticipated, the.emf proved practically independent of
the porosity (F:Lg.2). On a specimen with a 2% porosity the
temperature dependence of the electric resistance of lanthanum
hexaboride was measured up to 20000C (Fig-3). It was found that
lanthanum boride is a typical metallic conductor with a thermal
resistance coefficient of o.06o microohm cM/QC. This value is
considerably lower than the thermal resistance coefficient of
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85049
S/126/60/olo/oo4/022/023
E073/E435
Electrical Properties of Lanthanum Boride
metallic lanthanum. This is attributed to the considerably
larger rigidity of the crystal lattice of hexaboride compared to
that of the metal (the characteristic temperature of. 'lanthanum
boride is 8850K whilst that of lanthanum is 152 4K) and also to a
change in the energy states of the electrons of the metal when
forming compounds. Thereare 3 figures and 6 references: Soviet
and 2 English.
ASSOCIATION: Institut metallokeramiki 1~spetsiallnykh splavov
AN USSR (Institute of Cermets and Special Alloys
AS UkrSSRT-
SUBMITTED: March 8, 1960, initially
April 27, 196o, after revision
Card 3/3

63664
157'.2 ILI 2, J1, o
AUTFORS, Pa~iernc., Yu. B.-, Fcminkc, V. S. and Sa cn&cnc,r.; G. V.
TITLE,, Pi:,,dun~tion azie Ssme P-roperties ,f
PLa!ODTCAL4 Ukrainskiy kh-4m.1-cheF.M.y zhu:,na2 -~960, 9-6, No. 4i
PP, _409-44 I
TEXT; The authsrs zll-ud-ied t-..vo metlac-d's Of r.-rOducing:r~eodymium heXa",,Cr'_qde.
1) -:he red-uc-t�on c� nsodymium CX'IdeLby tha, c~a_rbor. of~boron earbid.1 With
31.nv1taie,7u_= reaction of the metal with bcron, and 2) direct r,~duotlcn
cf -~+he metal axide by boron j
(see reactior. e ~ In bsthca3ea:,
.L Z -
pro:~e,~a wa~_- carri~,d in a,vaau-cm furnac,3 w1th a graph'te hetitl_..
eiemen4 100 ~- -,800,C). The gaseoua reactlon products were ,,~)ntjn'.j()
_p-umped off, The completeness of the reaction.prrcess ,va3L :`".trolled T__'
4 1 al analyses of the p -du
oi--nis a" X-ray and chram'c ro ct'. The autho:z9 ~:Dncllzdq
_,Tom the resultq 'hat in both cases tht~ beat Tesul~s haxa'1-,o-r-j_de
are attainad by heating the e-o-n-ponent's ~OO_jt.5Cj'C;fo:P I h.
A finRly di-3per3e-, dark-blue powder was fozmed;, wh:.s.~ B-I~ontant was n~~-ar
th~4 stoinhiometz!_-;,,- ,-omposltior. The parameter a - 4.1211, A was :~Fllculatqd
Card 1/3

Production and Some P-OpertieS of
i
Bo16/BOf,4
!,-,r t),-e data of the ra-li:,:graph (Table 1); -zh.-L:,,h agrees, wi-~h tha data found
p~j -;-orB (Ref. Compact samples were pr S:az p wd~ary
-,4Ddymium lh-~xabc,:74.de by pressing at 20000C for 115-220 min at a. press'-Iro
2
'--f '175~200 k9/01M (optimum sonditions). Minimum porosity of theze sanples.
.36%. The -,ra'ae mea:3tzed by the au-hcrs fcr the elec-f~r~'oal resiati-r-;7
was Z.
(20,v,ohm - cm.) lay oonsiderably below that cl the met-all
The ectef ficjent of the eleotromotive fov-,-,ag, measured as a BN ,-Pt tharmo-
lbj~-twaen room temperatuxe and -100 0; r'Aaes contimiousl'y with the v
- nally, the authozs
L-~,mpere-vvxe, as correspond.;- to metal--*ir; sondu-~tivq-ty. Fi
,7.--a~ured the ladiation cooffici-9--it at 1600ce, the ricrohardne*s, t
tempe-,c,'.ure, and the eleotron work funstion,, A ccmparleon cf' th:i
p--opsr-'Ues of na-2dymIum hs-raboTide with those, -~,f the bi-iridea c-f ptln-~.- ra,~e
zk!~T,,hs zhowed *ha' the eli;ctrft~;ai res'stivity a-.kd the work
in +he order fr*m lanthanura aeadym-ium. Th~ia ag--ee2 with
Hunidis rule. There are. 'I ~abls and 8 ScTlet4 2 Fr~qn~:-h~ and
2 G e r i:-. a
C r /3