SCIENTIFIC ABSTRACT RYVKIN, S.M. - RYVKIN, S.M.

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• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001446520002-7
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 26, 2002
• Sequence Number: 2
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

S/os9/6o/ooa9/O05/01O/O2 0
6
B00
/.B070
9
AUTHORS: Koziovalenko, B. My!L3. n IS. M., Yaroshetskiyj I. D.,
Bogomazovy L. P.
TITLE: An Apparatus for Studying'the Effect of Gamma Radiati2ojn2~_8
on Semiconductor Materials

PERIOD~CAL: Atomna'ya energiya, 1960, Vol. 9, No. 5, PP 408 409
TEXT: In the present "Letter to the Editor",, a cobalt, apparatus for
'
study of the effect of,gamma radiation on the,electrical proper-
the
ties of semiconductors:is described. The apparatus vias develo ed in.
p
8 b the-PI
ziko-tekhni:cheskiy institut AN SSSR (instituta of Physics
195
y
11
and Telnology of the AS USSR). The-principal use of:the apparatusis
:
in.the production of defects that'are constant in time. To obtain
2se071
enough defects, , fluxes of 10 cm- are required. Fig.1 'gives~.a
s shows ~the'experimentar
chemat:ic representation'.of:the apparatus~ Fig.2
chambe Both are described in detail-The dose rate was::measured at
different points 6f.the,chamber, and some of the results are Given.in
f
a Table~. The highest dose rate of 128, r/sec. was found.at the center o
d :1
Car 13

I-- - - "

2W,
2/012/042
.9210/9594
AUTHORS: Vitovskiy, N .A.,.Maleyev, P. I., Matveyev~~ O.A.,
Ryvkin, S.M. and Tarkhin, -D., V.:
TITLE: Silicon N7P Counters~of Heavy Charged Particles
Operating.Vithout an,,Exterrral Power, Supply.,
PERIODICAL: Pribory i te'khnika.eksperime,nta, l961, No'.2,.pp.82-83.-
TEXT: Fused silicon 'diodes having an n-p junction~areaof'
2
about 1 mm have been studied-in order to determine their counting.
properties when operated as short-circuited rectifiers-, ~ The,
saturation currentan the:counters studied wa,s-not,over 0 . l:'jiA;
the.leAkage resistance was several megohms. Under such.conditions,
short-c.ircui t current rectification can be realized by usi .Lng.a
250,kilohm load. ..In.caunters irradiated with m-particles under
the above conditions and tested at-room temperature, pulsemplitudes
reached 2-3 MV'with,practically no noise. This performance;equals
that of.counters operating,as,photodiodes, but,the noise in.the
latter.case increases rapidly.with increasing'..cut-off voltage. In
,both case's (operating as rectifiers or photodiodes) pulse rise time
varies from 1 to 5 ~Lsec.. The decay time is determined by the R-C
of:the.circuit. This is, shown', in the, oscillograms, Fig.l. In

S/181/61/003/001/0,36/042
Investigation of the~kinetics of... B102/B204
here due to which impurity photoconductivity relaxation.differs
essentially from that.of.intrinsic.phbtoconductivity. An exact analysis
of these rules shows that an experimental, investigationi of.the kinetics
of impurity photoconductivity may serve, the purDOse of determining
various parameters of impurity centers as, e.g., the photon capture cross
section, the trapping cross section for free.carriers,-as well as the
energy position of the impurity levelin the7forbidden band, .the
concentration of centers and the degree of their completion.-~:In part 1
of this paper, the most important rules of the kinetics of impurity-
photoconductivity in the excitation of carriers for one type oflocal,
centers are dealt with. This is done on the basis of an, example of a
semiconductor, in whose forbidden band there is a sort of local level'
with concentration M; these levels are assumed to be in theupper half of,
the band, so that they are in heat exchange.with theconduction band.
This,semiconductor is.irradiated w'ith'monachromatic,light ofeuch a
the
wavelength that only electrons 'pass,.:,f rom the. local -levels onto.
conduction band, and that monopolar impurity photoconductivi
3- Y,Occur~s..
'The, equation of motion (13) d &n/dt (m0 On)qj. y A n(NcM +M-.mo+no+ An)
Card 2/8

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t 'i' "t '~iL on--~~_':~~,`,~`
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cap
at i61n -'o
-~le 1 f oi,' a", pho on 6--. mb m i a'-- e.~,e eo ron,:ooncentr n the
At ve t A th,
ia*: th6~ recombination.: ooif cien V'is_ he. light 'int~ensity;:" Y.
el: M
.-%-'I"-n-n -~,&n;'is the electron-donc-entration in adriduciion. s '~thi~"
-,,o :band no
t' ti' 6t':th`4"6i6 t iAh~,-~:effeo
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C
he.so u o r -of
se.
in 'the conduction band'f 'and M,,- n. T ti L in.::t~e~:oa
exc itati 6~ua~6-1 Iight`~ for',the case.,-: f -grgw,th*-..(switching",,-~,i:--,',
o
on, Be
pu
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~A ih (T
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7
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nves igat ion o the kine ce Of' 04
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express ons-'.-are
ditions -an
eren ..con
az'
x6t iorL,--- ime s on
io" n e:depen ence
"A-erived f or,
't d .4d dxp'licit:-f drigulas.' e
t- d'e' ived, for
rlien's'ity, is Anve s ga p,$ and,,
ti r
In -part,.2',of t a paper i'-i the:ef ~5q.' -_,p .:,,m-~_cons. an exposi impurit
hi
region upon - the.'kinetic's'. of:~ l#urijy-_- t t S~ iny ec
photo~60~1-~q. iy~.'.Y":.
U e
(l a 3). abq ir s
zJ07'~~'-_'~c' 2'-
%
0
-M -2.
_
N
__775 ~O n: 2.
is -the'i tens it ~ f'th
tant.,exposur e-.:amplitude .-o e
n -cons
0_1 y~,p.
'd
pu sei-l-m tration"'-in7~_, i7
qua lig t "an d-,~n i'*--'-*,,' e.-is ea y,-:~carr er--conpen
s re , t a
d ion `band.'-.~.: The A'rop j '-s 'e'ad ave e. or
a o n uc %3o h"
Y
A
d
'nH n - - -exT ri ni-
-st

s1: 61 oo
001 .03 042.-
S
JnirestigOion- of. th6',,k!n'et ids"dt 102 B204
sf the quaritum'.yie d;::of-Ihe-,!,in rins ;,k,,the ab a orp t ion
w
or-, s, ";n
'co'eff icient.. in the intr~nsqreg on,:.im ose,so ution..'i"': witchin
:long-wave light i S i'v
A
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0
.4
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rAc"
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771
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ri Y-
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.1

22064,
O~
S/181/61/603/004/030/.03'
B102/B209
40 0
(16
AUTHORSi Dobrego, V. P., Rogachev, A. A., 'TyvkIn I S. M. and
Yaroshetskiy, I. D.
TITLEi Low-temperature breakdown in germanium in bonnection with-
radiative defects
PERIODICAL: Fizika tverdogo tela, v, 3, no., 4, 1.961, 1,298-1300
TEXTv In ge~rmanium doped with elements of them third 'or.f.ifth group,_ the
current may suddenly rise at helium,temper4tures when. the field:, applied,-,,:
exceeds a certain.critical .value. This e Iffect,is known as low-temperature-~11
breakdown. The followinglis the mechanism of this effect: At these~tempera~
the majority of carriers,cansing impurity conduotion is localized:,at.
I mpuri ty centers, and resistivity is high. Whena field is appliedi, t4e,free
carriers are accelerated and,.,at acertainfield,strength, their 6n6rgy:'is
-thigh enough to cause impact ionization of the filled impurity oenters.,~, The
low-temperature breakdown.in Ge or Si due to donor or acceptor impurities
-has,been investigated repeatedly. The present paper is a report on studies
:',of this effect which is caused by, radiative defectal such defects have been.
-L-Oard 1/4

2215~
030:
Low-temperature ... B102/~209
roducIed by irradiating the semi S/181/61/003/004/030/
p conductor with gamma quanta or fast neutrons.
~Pirst, the-energy levels of the radiative defects are discussed;,Pig. I
shows the level scheme for gamma-irradiated (a) and,fast-neutron irradiated
(b) germanium. The two,.shallow levels of the radiative defects are only
0.02and 0.01 ev, respectively,,off.the valency,-band; at helium,temperatux-es,
theyare occupied by electrons only partly or not at 'all. In, neutron-'ir-
:radiated Ge specimens, the 0.01-ev level was found to.be free'.from el-ectrons
at helium temperatures. In chemically impure specimens', the presence of
.donor centers offered a certain compensation, and the level was partly-00-:1
cupied by electrons., Volt-ampere characteristics of such specimens were
taken'by means of a "characteriograph.11 They'were analogous to those ob-..'
taizied by B. Vul,.E. Zavaritska a and V. Chuyenkov for the-low-temperature.
breakdown due to impurity centers. Altogether, three specimens werle.examin-.
gamma-irradiated 1-~~ had a concentration of shallow radiation leveisof.
7.jol3cm-3 and a hole concentration on them of p -1.1o13cm_3;:
a 1,-;-.n`1 and
2 were n-type specimens,:having a resistivity of 2 ohm-cm; after neutronll
,irradiation they were p-type. n-_typ.e andl.,pa-type specimens1having ares istiv-~,~
1 tY. of 3and 12 ohm-cm, respectively, were measured!for comparison,. The,,
rPL-rd PIA

00
X?POAk-
rx
14 110 12 9.5 7.5
44 110 is 10.2 9

2
S118116 1 ~01A/005/059/042
B111/B202
L
AUTHORS: Paritskiy, L.,G., Rogachevt Am A ~ 9and Rvvkin, S. M.
TITLE: Kinetics of photocells with an "external" photoelectric
effect from a metal into a semiconductor
PERIODICAL: Fizika tverdogo telaq v. 3, no. 5, 1961, i613-1616
TEXT: The paperby R. Williams and R. Bube (Appl. Phys., 36t. No..6, 196o')
gives a series of proofs, for theexistence of an "external" photoelectric.
effect taking place from a metal into a semiconductor,in p'hotoicells-.con-;~
siating of a Cu-coated low-reeistan,c-e, CdS crystal. Earlier. measurements,,
made by the author showed a low inertia in such photocells. The studis,s'of:.:
of the tocells are similar to those of photocells with~n-
phot p
ju nctio ns which were dealt with in Ref. 3 (S- M. Ryvkin, ZhTF,,XXVII)69
16769 1957) and Ref. 4 (S.,M.'R~vkin, N. B. Strokant.L. L. Makovskiyy
ZhTF, XXVIII, 9, 1958) for, actuallyg.d. metal connected.with-an n- tn
semiconductor replaces a p-type semiconductor. In this case those electrons,
which have absorbed a photon and whose energy. exceeds the. barrier height
pla~rthe part of the unbalanced minority carriers in the metal. On the~same-,~
Card 1/3

17176
.
S/181/61/00
3/008/006/054
B102/B201
S, M:.,..
Psritskiy, L.,- G and Ryvkin,
AUTHORS:

TITLE: Study of "nonlinear" processes,of relaxation of. hoto-
p
in the presence of adhesion levels
'2245 .225
PERIObICAL: .''Fizi.ka tverdogo tela v. -,3 ;no. 8 1961 8
:
TEXT4 -here in gr
The investigations described eat detail were conducted-for
the purpose of calculatin.g.the,:r'elaxation of monopolar photoconduc
tivi,t~,
l
with any ("nonlinear") filling of adhesion levels.'. The relaxation curves
are shown in this case to., display: characteristic sections or points, -by.1which
the.level parameters can be calculated. :,Earlier 'alreadyl. Ryvkir n.had..studiedil
trapping adhesion levels
.of..carrier upon.:t.he. relaxation,,of
the effect
-
monopolar.photoconductivity.in the "linear." casel(adhesion levels:are littlel
filled durihg-the: relaxation ~process, and the,carrier lifetime
is ,cons
tant).
.
By,way~of experiments, the authors have,discovered an intense (x-adhesion on
the relaxation curves of.CdS single.cr stais,~(FTT, II, 3,_1960).
~The
. study
Y~
.
,
he kinetics of
.:is here ontinued by first observing theoretically t
.
monopolar photoconductivity at any de,-ree of excitation .(considerable'
Car

27276
S/181/61/003/068/006/0341
Study of "nonlinear'l.processes of...:' B102/B201
where denotes th quantum yield of the inner photoelectric.effect, k is_-
t he, light absorption coefficient, J is the light interisit is the
yl r
trapping factor of electrons from the c-band onto them levels*,-
1 (NI~N ), N NCexp(-8EM/kT), N is the effective atate.density
CM c
in-.the c-band, AE t he energy of M levels, calculated from the bo t Loin of
M
the conduction band; hv'>O,.26,, 4
0
relaxation'appears. Under *irrad iation:,with 0.49 ev hV: 43,:,ev the
-Card 1/3,
L

S118IV621004100 /015/0511

0 e exchange of impurity,~. . ~BV VB104_
ptical charg
relaxation curve slopes down gently owing to charge' exchange of the CU

e on v ng-double:negative
e t rs. Th - irradiati of III (all-centers ha i
C
- e v h v _~-^ 0 - 4 3 ev causes reverse char eexchang
charge) with 0.49 9 e which may.
hange, the rate of generation.ani to a lesser degree, also the lifetime.
c
in the irradiation:of;17,roup..IV, specimens -.(Containin' singly anddoubly,
9

:~
>0.32 evas well as in the-short-wave..
:charged,oenters with' 0 43:,'ev > h
range, there appears a "fast'! component. Theoretically possible slow
processes are not observed. After illumination.of a~group'Hlspecimen
with 0.49 ev.> h,- ev,~electronsfrom levels II.and Mare transferred
to :the C-zone. e intens-ity,of s,reverse process- ("flashing"')
_h ihi
I I: with electrons.-,, ~A:steady
of :level I
incre
ases with progressing filling
.
'
:,state sets in after a certain time. -Hdnce,::,the, amplitude. of this .'!reverse
flashing' (characterizing.the 'concentration of:-tr,ip1y. charged non-_
tends toward ing value: if, -p 'eliminary
equilibrium centers) alimit r
illumination has been -orotracted:for a sufficiently long time.,,. The more.
intense th e illuminat ion the more- quickly .,this, limiting value,4s

attained. There.are 6~f
igures., The most imp rtant English-language:
preference is: J.'Lambe, C. C.; Klick. Phys. Rev. , 96? 909,11955.
~Card.
2/3

`Wl
1 11-1

cn. iii. aetermination or main p4enumunuLugLuaL ysLcuuwuw&w wx
vestigating the kinetics of photoconductivity 5-6
Ch. iv.
Ge 'ration of nonequilibri carriers -
ne um
~7 104
Ch. I:%
Re o~bination via simple local centers -
C 123
Ch. ,V.Z. nonequilibrium carriers,,;- -
Adhesium of -166
,
__2

!'AM4016851

ly-ch.
Ch. VII.',,.Recombination via multip arged centers
206
Ch. VIII. Intrinsic (interband) recoubination 216
Ch. IX. Extrinsic photoconductivity 241
Ch. X.: Some effects of combined excitation.- -:260

lof:the 'lifetime"
29
Ch. X1
The meaning
concept,7 4
.
.
1
:,Ch. XII. Diffusion'and drift of nonequilibrium carriers (monqpolar_;.._!-~'
case),- - 307
carriers
Cho XIII. Diffusion
and,dr
ift of nonequil:ibrium (bipolar
,
,
,
case),- 335.
Ch. XIV. _Somephotomagnetoele6tric4nd photomagneto-concentration,
111 effects.- -~371
409
tors
Ch. XV. PhotPemf in
nhomogeneous,semiconduc
i
'
,,
,
,
Literature 47 8

:SUBMITTED: ~12JU1
:SUB CODE: PH, 63~ NR REP
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'19Dec63
OTHER: :110 DATE ACQ:

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concentrations can be injected at higher values' the time fo c h inga sample t!

n their work the authors used silicon
thus being very small.. I
p otodiodes,.with~i~,.~-
60 7 -ge-harg
radiation defects formed by gamma radiation;from Co., e9f the levels~
It is clear that a similar eff c&:'i-r
of radiation defects consequently took place. e
~Must be observed in other materials with impurities corresponding to deep leveld'~~..
wn
Preliminary,experimenfs have sho ,that the effect is.observed also in
Ge pho
'
-
to fast el ~ -es e nV 7
-is felt that the p
jdiodes that have been exposed ectrons' It
~need,is for more detailed investigationlon various materials. "'The authors:thanki,-

V Ostroumova and R. S.- Kasyftova for their help in' carrying outthe~experi~
Ye.
ents.11 Orig. art. has: ..2 figures.
ASSOCIATION: Fiziko-tekhnicheskiy institut im. A.,F. Ioffe AN SSSRs Lenirigrad
(Physical and Technical Institute Academy of Sciences -SSSR)
ug .ENCL
SUBMITTED':~ O9Mar63 DATE ACQ: 15A 63 01
SUB CODE:_ PH NO REP SOV: 005 001

2
rdi
6

S/os9/6o/ooa9/O05/01O/O2 0
6
B00
/.B070
9
AUTHORS: Koziovalenko, B. My!L3. n IS. M., Yaroshetskiyj I. D.,
Bogomazovy L. P.
TITLE: An Apparatus for Studying'the Effect of Gamma Radiati2ojn2~_8
on Semiconductor Materials

PERIOD~CAL: Atomna'ya energiya, 1960, Vol. 9, No. 5, PP 408 409
TEXT: In the present "Letter to the Editor",, a cobalt, apparatus for
'
study of the effect of,gamma radiation on the,electrical proper-
the
ties of semiconductors:is described. The apparatus vias develo ed in.
p
8 b the-PI
ziko-tekhni:cheskiy institut AN SSSR (instituta of Physics
195
y
11
and Telnology of the AS USSR). The-principal use of:the apparatusis
:
in.the production of defects that'are constant in time. To obtain
2se071
enough defects, , fluxes of 10 cm- are required. Fig.1 'gives~.a
s shows ~the'experimentar
chemat:ic representation'.of:the apparatus~ Fig.2
chambe Both are described in detail-The dose rate was::measured at
different points 6f.the,chamber, and some of the results are Given.in
f
a Table~. The highest dose rate of 128, r/sec. was found.at the center o
d :1
Car 13

I-- - - "

2W,
2/012/042
.9210/9594
AUTHORS: Vitovskiy, N .A.,.Maleyev, P. I., Matveyev~~ O.A.,
Ryvkin, S.M. and Tarkhin, -D., V.:
TITLE: Silicon N7P Counters~of Heavy Charged Particles
Operating.Vithout an,,Exterrral Power, Supply.,
PERIODICAL: Pribory i te'khnika.eksperime,nta, l961, No'.2,.pp.82-83.-
TEXT: Fused silicon 'diodes having an n-p junction~areaof'
2
about 1 mm have been studied-in order to determine their counting.
properties when operated as short-circuited rectifiers-, ~ The,
saturation currentan the:counters studied wa,s-not,over 0 . l:'jiA;
the.leAkage resistance was several megohms. Under such.conditions,
short-c.ircui t current rectification can be realized by usi .Lng.a
250,kilohm load. ..In.caunters irradiated with m-particles under
the above conditions and tested at-room temperature, pulsemplitudes
reached 2-3 MV'with,practically no noise. This performance;equals
that of.counters operating,as,photodiodes, but,the noise in.the
latter.case increases rapidly.with increasing'..cut-off voltage. In
,both case's (operating as rectifiers or photodiodes) pulse rise time
varies from 1 to 5 ~Lsec.. The decay time is determined by the R-C
of:the.circuit. This is, shown', in the, oscillograms, Fig.l. In

S/181/61/003/001/0,36/042
Investigation of the~kinetics of... B102/B204
here due to which impurity photoconductivity relaxation.differs
essentially from that.of.intrinsic.phbtoconductivity. An exact analysis
of these rules shows that an experimental, investigationi of.the kinetics
of impurity photoconductivity may serve, the purDOse of determining
various parameters of impurity centers as, e.g., the photon capture cross
section, the trapping cross section for free.carriers,-as well as the
energy position of the impurity levelin the7forbidden band, .the
concentration of centers and the degree of their completion.-~:In part 1
of this paper, the most important rules of the kinetics of impurity-
photoconductivity in the excitation of carriers for one type oflocal,
centers are dealt with. This is done on the basis of an, example of a
semiconductor, in whose forbidden band there is a sort of local level'
with concentration M; these levels are assumed to be in theupper half of,
the band, so that they are in heat exchange.with theconduction band.
This,semiconductor is.irradiated w'ith'monachromatic,light ofeuch a
the
wavelength that only electrons 'pass,.:,f rom the. local -levels onto.
conduction band, and that monopolar impurity photoconductivi
3- Y,Occur~s..
'The, equation of motion (13) d &n/dt (m0 On)qj. y A n(NcM +M-.mo+no+ An)
Card 2/8

_89297
s/lbiJ61/odV001/03
-0
-Inves
13 162/k 04
M
t 'i' "t '~iL on--~~_':~~,`,~`
n,,;,o an., e ec r n-
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cap
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At ve t A th,
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t' ti' 6t':th`4"6i6 t iAh~,-~:effeo
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C
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se.
in 'the conduction band'f 'and M,,- n. T ti L in.::t~e~:oa
exc itati 6~ua~6-1 Iight`~ for',the case.,-: f -grgw,th*-..(switching",,-~,i:--,',
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't d .4d dxp'licit:-f drigulas.' e
t- d'e' ived, for
rlien's'ity, is Anve s ga p,$ and,,
ti r
In -part,.2',of t a paper i'-i the:ef ~5q.' -_,p .:,,m-~_cons. an exposi impurit
hi
region upon - the.'kinetic's'. of:~ l#urijy-_- t t S~ iny ec
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sf the quaritum'.yie d;::of-Ihe-,!,in rins ;,k,,the ab a orp t ion
w
or-, s, ";n
'co'eff icient.. in the intr~nsqreg on,:.im ose,so ution..'i"': witchin
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.1

22064,
O~
S/181/61/603/004/030/.03'
B102/B209
40 0
(16
AUTHORSi Dobrego, V. P., Rogachev, A. A., 'TyvkIn I S. M. and
Yaroshetskiy, I. D.
TITLEi Low-temperature breakdown in germanium in bonnection with-
radiative defects
PERIODICAL: Fizika tverdogo tela, v, 3, no., 4, 1.961, 1,298-1300
TEXTv In ge~rmanium doped with elements of them third 'or.f.ifth group,_ the
current may suddenly rise at helium,temper4tures when. the field:, applied,-,,:
exceeds a certain.critical .value. This e Iffect,is known as low-temperature-~11
breakdown. The followinglis the mechanism of this effect: At these~tempera~
the majority of carriers,cansing impurity conduotion is localized:,at.
I mpuri ty centers, and resistivity is high. Whena field is appliedi, t4e,free
carriers are accelerated and,.,at acertainfield,strength, their 6n6rgy:'is
-thigh enough to cause impact ionization of the filled impurity oenters.,~, The
low-temperature breakdown.in Ge or Si due to donor or acceptor impurities
-has,been investigated repeatedly. The present paper is a report on studies
:',of this effect which is caused by, radiative defectal such defects have been.
-L-Oard 1/4

2215~
030:
Low-temperature ... B102/~209
roducIed by irradiating the semi S/181/61/003/004/030/
p conductor with gamma quanta or fast neutrons.
~Pirst, the-energy levels of the radiative defects are discussed;,Pig. I
shows the level scheme for gamma-irradiated (a) and,fast-neutron irradiated
(b) germanium. The two,.shallow levels of the radiative defects are only
0.02and 0.01 ev, respectively,,off.the valency,-band; at helium,temperatux-es,
theyare occupied by electrons only partly or not at 'all. In, neutron-'ir-
:radiated Ge specimens, the 0.01-ev level was found to.be free'.from el-ectrons
at helium temperatures. In chemically impure specimens', the presence of
.donor centers offered a certain compensation, and the level was partly-00-:1
cupied by electrons., Volt-ampere characteristics of such specimens were
taken'by means of a "characteriograph.11 They'were analogous to those ob-..'
taizied by B. Vul,.E. Zavaritska a and V. Chuyenkov for the-low-temperature.
breakdown due to impurity centers. Altogether, three specimens werle.examin-.
gamma-irradiated 1-~~ had a concentration of shallow radiation leveisof.
7.jol3cm-3 and a hole concentration on them of p -1.1o13cm_3;:
a 1,-;-.n`1 and
2 were n-type specimens,:having a resistivity of 2 ohm-cm; after neutronll
,irradiation they were p-type. n-_typ.e andl.,pa-type specimens1having ares istiv-~,~
1 tY. of 3and 12 ohm-cm, respectively, were measured!for comparison,. The,,
rPL-rd PIA

00
X?POAk-
rx
14 110 12 9.5 7.5
44 110 is 10.2 9

2
S118116 1 ~01A/005/059/042
B111/B202
L
AUTHORS: Paritskiy, L.,G., Rogachevt Am A ~ 9and Rvvkin, S. M.
TITLE: Kinetics of photocells with an "external" photoelectric
effect from a metal into a semiconductor
PERIODICAL: Fizika tverdogo telaq v. 3, no. 5, 1961, i613-1616
TEXT: The paperby R. Williams and R. Bube (Appl. Phys., 36t. No..6, 196o')
gives a series of proofs, for theexistence of an "external" photoelectric.
effect taking place from a metal into a semiconductor,in p'hotoicells-.con-;~
siating of a Cu-coated low-reeistan,c-e, CdS crystal. Earlier. measurements,,
made by the author showed a low inertia in such photocells. The studis,s'of:.:
of the tocells are similar to those of photocells with~n-
phot p
ju nctio ns which were dealt with in Ref. 3 (S- M. Ryvkin, ZhTF,,XXVII)69
16769 1957) and Ref. 4 (S.,M.'R~vkin, N. B. Strokant.L. L. Makovskiyy
ZhTF, XXVIII, 9, 1958) for, actuallyg.d. metal connected.with-an n- tn
semiconductor replaces a p-type semiconductor. In this case those electrons,
which have absorbed a photon and whose energy. exceeds the. barrier height
pla~rthe part of the unbalanced minority carriers in the metal. On the~same-,~
Card 1/3

17176
.
S/181/61/00
3/008/006/054
B102/B201
S, M:.,..
Psritskiy, L.,- G and Ryvkin,
AUTHORS:

TITLE: Study of "nonlinear" processes,of relaxation of. hoto-
p
in the presence of adhesion levels
'2245 .225
PERIObICAL: .''Fizi.ka tverdogo tela v. -,3 ;no. 8 1961 8
:
TEXT4 -here in gr
The investigations described eat detail were conducted-for
the purpose of calculatin.g.the,:r'elaxation of monopolar photoconduc
tivi,t~,
l
with any ("nonlinear") filling of adhesion levels.'. The relaxation curves
are shown in this case to., display: characteristic sections or points, -by.1which
the.level parameters can be calculated. :,Earlier 'alreadyl. Ryvkir n.had..studiedil
trapping adhesion levels
.of..carrier upon.:t.he. relaxation,,of
the effect
-
monopolar.photoconductivity.in the "linear." casel(adhesion levels:are littlel
filled durihg-the: relaxation ~process, and the,carrier lifetime
is ,cons
tant).
.
By,way~of experiments, the authors have,discovered an intense (x-adhesion on
the relaxation curves of.CdS single.cr stais,~(FTT, II, 3,_1960).
~The
. study
Y~
.
,
he kinetics of
.:is here ontinued by first observing theoretically t
.
monopolar photoconductivity at any de,-ree of excitation .(considerable'
Car

27276
S/181/61/003/068/006/0341
Study of "nonlinear'l.processes of...:' B102/B201
where denotes th quantum yield of the inner photoelectric.effect, k is_-
t he, light absorption coefficient, J is the light interisit is the
yl r
trapping factor of electrons from the c-band onto them levels*,-
1 (NI~N ), N NCexp(-8EM/kT), N is the effective atate.density
CM c
in-.the c-band, AE t he energy of M levels, calculated from the bo t Loin of
M
the conduction band; hv'>O,.26,, 4
0
relaxation'appears. Under *irrad iation:,with 0.49 ev hV: 43,:,ev the
-Card 1/3,
L

S118IV621004100 /015/0511

0 e exchange of impurity,~. . ~BV VB104_
ptical charg
relaxation curve slopes down gently owing to charge' exchange of the CU

e on v ng-double:negative
e t rs. Th - irradiati of III (all-centers ha i
C
- e v h v _~-^ 0 - 4 3 ev causes reverse char eexchang
charge) with 0.49 9 e which may.
hange, the rate of generation.ani to a lesser degree, also the lifetime.
c
in the irradiation:of;17,roup..IV, specimens -.(Containin' singly anddoubly,
9

:~
>0.32 evas well as in the-short-wave..
:charged,oenters with' 0 43:,'ev > h
range, there appears a "fast'! component. Theoretically possible slow
processes are not observed. After illumination.of a~group'Hlspecimen
with 0.49 ev.> h,- ev,~electronsfrom levels II.and Mare transferred
to :the C-zone. e intens-ity,of s,reverse process- ("flashing"')
_h ihi
I I: with electrons.-,, ~A:steady
of :level I
incre
ases with progressing filling
.
'
:,state sets in after a certain time. -Hdnce,::,the, amplitude. of this .'!reverse
flashing' (characterizing.the 'concentration of:-tr,ip1y. charged non-_
tends toward ing value: if, -p 'eliminary
equilibrium centers) alimit r
illumination has been -orotracted:for a sufficiently long time.,,. The more.
intense th e illuminat ion the more- quickly .,this, limiting value,4s

attained. There.are 6~f
igures., The most imp rtant English-language:
preference is: J.'Lambe, C. C.; Klick. Phys. Rev. , 96? 909,11955.
~Card.
2/3

`Wl
1 11-1

cn. iii. aetermination or main p4enumunuLugLuaL ysLcuuwuw&w wx
vestigating the kinetics of photoconductivity 5-6
Ch. iv.
Ge 'ration of nonequilibri carriers -
ne um
~7 104
Ch. I:%
Re o~bination via simple local centers -
C 123
Ch. ,V.Z. nonequilibrium carriers,,;- -
Adhesium of -166
,
__2

!'AM4016851

ly-ch.
Ch. VII.',,.Recombination via multip arged centers
206
Ch. VIII. Intrinsic (interband) recoubination 216
Ch. IX. Extrinsic photoconductivity 241
Ch. X.: Some effects of combined excitation.- -:260

lof:the 'lifetime"
29
Ch. X1
The meaning
concept,7 4
.
.
1
:,Ch. XII. Diffusion'and drift of nonequilibrium carriers (monqpolar_;.._!-~'
case),- - 307
carriers
Cho XIII. Diffusion
and,dr
ift of nonequil:ibrium (bipolar
,
,
,
case),- 335.
Ch. XIV. _Somephotomagnetoele6tric4nd photomagneto-concentration,
111 effects.- -~371
409
tors
Ch. XV. PhotPemf in
nhomogeneous,semiconduc
i
'
,,
,
,
Literature 47 8

:SUBMITTED: ~12JU1
:SUB CODE: PH, 63~ NR REP
SOVs -.187

'19Dec63
OTHER: :110 DATE ACQ:

Card

once
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dir-alaka tiod. B ip-arative, y~_~._gimp e,4adAsurei"l#s,,;-, f
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:thankN A,_Vit6v9ki4. B M.: 0-- Tg-~~Vi__~Mashove sit,
no
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-for valuable. discussion i Origi- art -'-has t'~~`10: formulas '6 f ig u_reaj.-,..'an'- d ~13,Aab
'ASSOCIATIOM tekhnicheE -iistitut 1meni k, - F lo
~,(Physidot6.hnics~l itstitut
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concentrations can be injected at higher values' the time fo c h inga sample t!

n their work the authors used silicon
thus being very small.. I
p otodiodes,.with~i~,.~-
60 7 -ge-harg
radiation defects formed by gamma radiation;from Co., e9f the levels~
It is clear that a similar eff c&:'i-r
of radiation defects consequently took place. e
~Must be observed in other materials with impurities corresponding to deep leveld'~~..
wn
Preliminary,experimenfs have sho ,that the effect is.observed also in
Ge pho
'
-
to fast el ~ -es e nV 7
-is felt that the p
jdiodes that have been exposed ectrons' It
~need,is for more detailed investigationlon various materials. "'The authors:thanki,-

V Ostroumova and R. S.- Kasyftova for their help in' carrying outthe~experi~
Ye.
ents.11 Orig. art. has: ..2 figures.
ASSOCIATION: Fiziko-tekhnicheskiy institut im. A.,F. Ioffe AN SSSRs Lenirigrad
(Physical and Technical Institute Academy of Sciences -SSSR)
ug .ENCL
SUBMITTED':~ O9Mar63 DATE ACQ: 15A 63 01
SUB CODE:_ PH NO REP SOV: 005 001

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