SCIENTIFIC ABSTRACT REGEL, A.R. - REGEL, A.R.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001444520018-2
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: January 3, 2017
• Document Release Date: August 1, 2000
• Sequence Number: 18
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

571-9-11/40
Peculiarities of the Temperature Dependence of Specific Resistance in
Liquid Eutectic Systems.
by the investigations confirm the opinion expressed by
V.I. Danilov and I.V. Radohenko on the conservation of
the quasieutectic structure in the melt with an euteotic
concentration, and they show that the quasieutectic
structure in the melt can be conserved within a temperature
range of some hundreds of degrees.
There are 11 figures and 15 Slavic references.
ASSOCIATION: Leningrad Pedagogical Institute~
(Leningradskiy pedagogicheskiy institut.)
SUBMITTED: March 21, 1957
AVAILABLE: Library of Congress.
CARD 2/2

57-9-34/40
AUTHORt Ablova, M.S., Regell, A.R.
TITLEs The Thermoelectromotoric Force 6f Germaai= Near )bjtjQg
TexVerature (Termoelektrodvizhushchaya sila germaniya vblizi
temperatury plavleniya)
PERIODICALs Zhurnal Tekhn. Piz., 1957, Vol. 27, Nr 9, pp. 2170 - 2172 (USSR)
ABSTRAM The possible causes of the great difference found in AoG-data
are explained. The applicability of extrapolation up to melt-
ing temperature and the dependence of the electric character-
istics of Germanium (e.g. mobility of current carriers) upon
temperature are ch-,ecked. On the strength of the investigation
carried out it may be said 1.) that plastic deformation may be-
come effective at high temperature on the electrical proper
ties of germanium. Here the effect corresponds to an increa;e
of hole concentration and to a balancing of the mobility values
for the electrons and holes. The final explanation of the part
played by these possibilities necessitates special experiments.
2.) The maximum values of the thermo EMP at high temperatures
are considerably lower than follows from the extrapolation of
empirical and theoretical data concerning the dependence of
Card 1/2 electron- and hole-mobility upon temperature. This circumstance

57-9-34/40
The Thermoelectromotoric Force Near Melting Temperature
permits the conclusion that, -in a "perfect" germanium mono-
crystal, the mobility of electrons and holes is balanced at
high temperatures. Am - differential thermo-EMF inAx V/ C.
There are 5 Slavic references.
SUBMITTEDt July 31, 1957
AVAILABLEs Library of Congress
Card 2/2

AUTHORS.' Gaybullayev, F and Regel-1, A. 1. 57-10-6/33
TITLE'. Note on Some Peculiarities of the Temperature Dependence of
Electric Conductivity of Continuous Atomic Solution Systems
Ag_ku, In_Pb, Bi-Sb in Solid and Liquid State (0 nekotorykh
osobennostyakh temperaturnoy zavisimosti elektroprovodnosti
sistem nepreryvnykh atomnykh rastvorov Ag-Au, In-Pb, Bi-Sb v
t.verdom i zhidkom sostoyaniyakh).
PERIODICAL: Zhurnal. Tekhn. Fiz., 1957, Vol. 27, Nr lo, pp. 224o-2245 (USSR).
ABSTRACT. It is shown, that the jump.of electric conductivity, which occurs
on the smelting of Ag-ku, In-Pb, Bi-Sb varies in a characteristic
manner from.one system to another. The ratiolg salid~'g liquid
equals about 2 in the case of the Ag-Au system, and is little
dep,_~nden~,, on the composition, which is quite natural in the case
of a system very neax to an ideal atomic solution. This ratio redu-
ces its value very much in the case of the In_Pb system at the trans
tion from the pure components to the solid solution. Gonaidering the
Bi-Sb system the ratio of the jump in electric conductivity sehaws an
inversed sign, implying, that the smelting is connected with the
Card 1/2 increase; of electric conductivity. In this case this increase of

57-10-6/33
Note on Some Peculiarities of the Temperature Dependence of Electric Conducti:1ity
of Continuous Atomic Solution Systems Ag-ku, In-111b, Bi-qb '-n Solid and Liquid
State.
electric conductivity is greater in solid solutions than in the pure
components. The dependence of the electric conductivity of Ag-ku,
In-Pb., Bi-Sb systems on the composition at high temperatures approa-
ches the properties of mechanical mixtures of the components (of
sold eutectic types of system3). This result can be expla)-.asd quite
naturally by the fact, that the dispersion of the electrony waves
at the heat vibrations of the atoms preponderate in comparison to
the effect, which is connected with the difference of the dispersion
properties of the component atoms.
There are 6 figures and Ll Slavic references.
ASSOCIATION: Leningrad Pedagogical Institute (Leningradskly pedagogicheskiy in-
stitut).
SUBMITTED: March 7, L957.
AVAILABLE: Library of Congress.
Card 2/2

110n 'nip Role of the Short and Long-Range a-der in the Electrical
Fli-,perties of Soubstnances"
naoer submitteJ Intl. Cohf. of Semiconduct6rs, Rochester, N. Y., lFj-22
August 1958.
inst. for Semftcond,,ictors, -~_ningr~d.
1~
Abs t: B-3,107,243, 2 july 195~

57 -2--23/352
LUTHORS Yaydanov, V. I. Re6el A. it.
,'ITLD-
On ~he Influence ci' the Thicknjsj of Dismuth Films on Their
Electric L"'operties (0 vliyanii tolshchiny plerok vismuta na
ikh elektriches'Kiye svoystvaa)
PERIODICAL- Zhurnal Tekhnicheskoy Fiziki, 1950, Vol. 20, Nr 2, PP-402-411
ABSTRACT: The electric properties of thin Bi-filmZ were investi.~ated
here. They were produced in a vacuum by t:iears of spray ccat-
in.,, (vaporized metal coating) in a thermal way. The thickness
oC the sa%,ip1cs varied f r-on 2,4 to ij-9 u. The authors investigat-
ed: th,(_, specific resintance of the films, the Mall effect,
the modificati-on cf the resistance in a transverse magnetic;
field at temperatLxes of from -190 to +150 OC. The following
,,-!as determimd. At a drop in temperature from +150 to -190 C
the qpn,~ific re-o-istan3e first decreases and after attaining
the -..,,inim,,.im it ajain increases. The increase in resistance
is the hi,---her and the minimurn is the more displaced to the right
Card '112 into -the rfui;,~e of 'rig)i te.,:iDeratures the thinner the film is.

2-- _' L'/_) 2
e rD f t 1, n J F Ji I ~21 i r E I e:- r -ic Pro7oer.-
Z L d t h z! r erat,~-:7_,-de7oendercas are
j- on The ana ysi s t'- rc-
-ine-' with -,~he a~ r! i--f e
e
;,,I !-Ilc r"j2:1- Of I
U 1 C d
.),2 1 L at tlie film-boundarle-i,
A
hoi-e tha h(_0 a.n_,O)
1c -,;I k3 a p I c vi Q
c th c lec
'n 1 1 v s" 10 W s a
a c f 4 1 T:j t..3 L E
S. A. S~nirncvr, de~-_r-
i] 1 2 d, t S-z r-f t fila-~. 0. D. Yel.;7~tl_
..... a & n n. E 'Ilr~:?"~: a, ~'Ile ;o (; -c -:! s I c: V. N. Yerc
_'_'17,272. are "t
, C, :? - , - :'.,. _' , V"I 0
7, 97 e 1,_:
n 2 a F Jou.71 uc t c, rs. AS !SSR, Lor-i-riSrad
i r t 1~ t u ov IT! SSS'.R, lx~iinl-ra~:)
S U BI., 1 1' , D jul_- 1
AVAJI.:M, Z :
Ce-rd 2/2 1. Blsmutli 2. Biouncitl- f-'-LMs--V-Xvt!'ic-l:L Properties

5-T-28-3-15133
AUTHOit Re-el, A. R.
TII'LE: On the Dependence of the Resistance of Zn, Cd, :_,.nd Sb Above
the Boilin6 Point (0 zavi3imosti soproti7rleriya ZzIn, Cd, i
Sb vyshe temperatury kipeniya)
PERIODICALA Zhurnal Tekhnicheskoy Kiziki, 1958, Vol. 28., Nr 3. PP-521-524
(USSR)
ABSTRACT- From References 1, 2s 3: 41 5, 10 and 14 follows tbato be.-
-innin
-- from a sufficiently high temperature the resistance
of the iiiietals of group II must rapidly increase. For then
the effects of the resistance-incrPase due to the thermal
motion and the loosening up of the structure become deci.-
sive. In Cd and Zn this had never been observed. In order
to chech this in Zn and Cd and to determine the temperature
range with a small temperature cceffi~~ient in the case of
Cd and Zn in an experimental way, measurements of their elec-
tric conductivity were performed at 1300 0C, _J.,e~ above the
Card 1/3 boiling point. The measurements were made according to the

57-28-3-15/33
On the Dependence of the Resistance of Zn,, Cd . and Sb Above the Bcfiin,-,
Point
method of the rotating magnetic field (Reference 15). ',r*he
Cd- and Zn-.samples were pl'5-cer~ ~_u evaluated and soldered
quartz ampules. The types Cd--O and Zn-0 according to the
OCT-specification were used as initial substances. In the
computation of the results of measurements it was agm med
that the volume of the liquid Cd P-nd Zn increases linearly
witsi temperature (according to tile experimental data of
Reference 13). It is shown that from about 800 C in Cd and
from about 1000 0C in Zn an intensive increase in the tem-
perature dependence of the resistance is observed~ The tem-
perature range of the small temperature coefficients of the
resistance is fairly large. Moreover the results of measure.-
ments concerning the temperature dependence of the specific
resistance of Sb are given here. Qualitatively the course
is similar to that in Cd and Zn. The observed temperature
dependences of the electric resistance are in agreement with
the results of Reference 6. There are 5 figures, and 15
references, 5 of which are Soviet.
Card 2/3

57-28-3--15/'33
On the Dependence of the Resistance of Zn, Cd, and Sb Above the Boiling
Point
ASSOCIATION: Institut poluprovodnikov All SSSR,Lenirtgrad
(Leningrad Institute for SemiconductorsAS USSR)
SUBMITTED: July 30, 1957
1. Ant-imony--Resistance 2. Cadmium--Resistance
3. Zinc--Resistance 4. Metals--Temperature factors 5. Temperature
--Electrical effects
Card 3/3

R-GEL 1 2 A.R.
RelaLion betweer, -ne miel -L.-ing point and a change in the n-type
coz!ductivity of a substance in melting. Uch zap. Ped ins, Gerts.
197:187-191 158. (NIRA 16.9)
(Melting points)
(Electric conductivity)

LANGE Y V.11.; REGELI, A.R.
"Mass spectrometerO - a laboratory manual used in specialist training.
Uch zap. Ped inst Gerts. 197:223-228 f58. (IMILRA 16:9)
(Laboratory manual)

RECISLI) A.R.
,iim:,le demonstratio% of -~Iie dep-endence of LI;e self' inductance of a
choke-coil on tll.,, series cGrj~cctior. of its "sections.n Uch zap. Fed
inst, Gerts. 197:22111-230 158. 16:~)
(Self -inductance) (Electric coils)

LANGE, Y.N.; REGELI, A.R.
Some anomalies in the interdependence of density and microhardness
of Te-Se and Te-S alloys. Piz. tver. tela 1 no.4:559-561 '59.
NiRA 12:6)
l.Ioningradskiy gosudaretvenny7 pedagogicheskiy institut im.
A.I. Gertsena.
(Tellurium alloys)

SUBBOTINA, Yelena Pavlovna; REGEL, A.R .., otv.red.; PIASTRO, V.D.,
red.; VODCLAGINA, S.D., tekhn.red.
CLaboratory methods for studying transistor devices] Labors-
tornye metody izucheniia poluprovodnikovykh priborov. Lenin-
grad, Izd-vo Leningr.univ.. 1960. 132 p. (MIRA 13:7)
(Transistors)

84591
S118116010021010101310,511
0 B019/BO70
AUTHORSi Lange, V. N. and RegelIq A. R.
The Peculiarities of the Depen.
TITLE, dence it of the Forbidden Band
Width and the Mobility of Carrierslon the Composition of
Tellurium - Selenium and Tellurium Sulfur Solid Solutions
PERIODICA13 Fizika tverdogo tela, 1960, Vol. 2, No. 10, pp. 2439-2445
TEXT3 Data about the depend-nee of the forbidden band width and the hole
mobility in the -impurity region ar given as function of the composition
of the systems Te - Se Tand Te -- S:&hese data provide a proof of the
mechanism of the action of the iEp-urities.'The results on hole mobility
are shown in Pigs. 1-4. The change of resistivity of the Te - S alloy in
a magnetic field is graphically shown in Fig. 5; the dependence of this
change on the composition of the alloy is shown in Fig. 6. The results on
forbidden band widths are collected in a table. From the results obtained
here, it is concluded that the introduction of selenium or sulfur atoms
leads to an increase in the hole concentration and electric conduct4Vity.
The structural changes brought about by the introduction of the impurity
Card 1/2

84591
The Peculiarities of the Dependence of the S/181/60/002/010/013/051
Forbidden Band Width and the Mobility of B019/BO70
Carriers on the Composition of Tellurium - Selenium and Tellurium - Sulfur
Solid Solutions
atoms are discussed on the two dimensional lattice model (Fig. 7). The
anomaly of the mobility is interpreted on this model. Since the transport
of the carrier from one to the other chain Is easier in a lattice with
distorted chains, an increase of the macromobility takes place while the
micromobility decreases. The change of resistivity in the magnetic field
expresses the degree of anisotropy of the material. This change is
minimum in isotropic substances and maximum in strongly anisotropic sub-
stances. There is no change in the forbidden band width for small im
purities, only when the impurity concentration is a few per cent, does a
change appear possible. The minimum of the dependence of the forbidden
band width on the composition at 0.5 - 0.10 at % agrees with the above
mentioned mechanism of the action of impurities described by the authors.
There are 9 figures, 2 tables, and 8 referencess 4 Soviet, 3 US, and
1 Swiss.
ASSOCIATION,, Institut poluprovodnikov AN SSSR Leningrad (Institute of
of the Academy of SciencesUSSR. Lenjp6rad)
SUBMITTED.3 ApTil 4j 1960
Card 2/_')

REGEL', A.R.; STIL'BANS, L-S.
- - -. - - Abram Fedorovich Ioffe. Fiz. tver. tela 2 ro.11:2671-2676 E 060.
(MIRA 13:12)
1. Institut poluprovodnikov AN SSSR, Leningrad.
(Ioffe, Abram Fedorovich, 1880-)

861,32
S/181/60/002/011/016/042
BOO6/BO56
0 00 25" q3 SO
AUTHORS: Andreye,,., A. A. and
TITLE: Electrica Conductivi+y 7,f Liqu~.d Selenium in Strong Elec-
tr.-. Fields
PERIODICAL: Fi.,ik-a -,,erdogt, tela, !960, Vc-1. 2, No. 11, pp. 2770-2775
TEXT: The authors in-,reDt igated the ale--,trioal conductivity cf liquid sele-
riium fields --.f Lip ro 10 C~ .1,om temperature interval of 180-350 0C.
The basl:; ci.-cui- diagram the experimenral arrangement used for this
purpose is shcwn ir, Fig. '. They 3tudied r:,,L-.re ~q9.99~` and commercial
selen-i,~~m wh-~--h J3 t- ccnT-ain .--hllcrine as viell az sclenium
wit'L-. ~cdine imp!-ri ties (ur to, ~%). Aln invest-igaticn -~f the effect of -Jodine
imparities ur-~n tl~e elec,tri-oal condu--ti---ity --f Ii-quid selenium showed that
Ird ne corresponds to th-3 maxiLmum field effect. The
ar add;fi,3.a -." ~~C-~% .. I I
d enenden:!e - f the e I e,:~ rri.--al co-ndu,, t.' v i~y ~.,,n the elec tric f iold strength
1i I
agrees with FrenkE-' s f-r-mula f,-r fz 0 v rm, and is foond to be
I - -elds > it / -
an extrapollaticn, ~f ~nl data of the analo-ous effect in amorDhous selenium.
0 -
The experimenta" i-e-zults are given in -31.1a,-rarr.-s and tables. Fig. 3 shows
0
Card '/6

E 1 e --, t r I c -a C c, n d u -, t1
y ~,f L'quid Seienium S/!81/'60/'002/011/016/'042
~n Stror.- Electric Fieid B0061BOcz6
the typical course -,aken by ihe E-dependence -f the relative chanoges of
resist'vity ZARIR
shere 6R is the field -induced decrease in resistivity
of T-11". n d 11Gis the retiist. 'v,'Ly it. a f`eld that is smaller than
t h P c r i t i ~~,u L r iI d ,; r 'N it ~; E ~ 0. T.1i e t, e mp e va t u r e d e p a lid a rL; e C, f 6 R/ R01 .9
in F~C. 4. flfumer'~;~atl data c-n the temperature and field de-
penden~,:t r~f AR/R, fc,--- different ic.dins- con,~entraticns are given in tables.
It was fou%d that-the resistivi-ty of liquid selenium decreases very much
in strcng ele~_-tric f-i"elds fmaximum: 12-14~'~). The field effect decreases
with increasing tempe7arur-? under ctherwiss equal conditirns. The critical
f i e i d i, s0 :G in arder'COC-1 ad jelenium', the field effect in-
c;reases mr(,notcni :,ally rj th tj,~~,f eas~lig temperature. Th;_-- temperature de-
Per.3ence Is dist_'Ln:-,:_y m-arked w'_zh_'n 7hs range, These results indicate
that 'Liqu'-d seleniuai has ark r-t,,-p"_ and not a p-type cciaductivity, The
maxim,_~.m of the rela~-ive change Ir. resistivity observed with a 0.3% iodine
additinn is related to tLe ion dependence c'& the structure of
the Impurity :-;-jmpiexes. Y-u, V. Ii"Savskiy and S. G. Shullman are thanked
for discussions. '~-. F. I:-,ffe and 11. K. Shid-iovskiy are mentioned. There
-are 5 figures, 1 table; and 16 refpren~.es: 14 Sov-_et., 1 US, and 1 japanese.
Card 2/6

8 643 21
Electrical Conductivity of Licuid Selen~ium S/181/60/002/011/016/042
in Strong Electric Fields B006/BO56
ASSOCIATION: Inst-itut -Dolu-provodnikov AN SSS.TZ Leningrad
(ins'-i+u'ue of Semiconductors of the AS USSR, Leningrad)
SUBMITTED: June 10, 10~60
Legend to Fig. 1: 1) Furnace; 2) Specimen, T) Thermocouple; 3) Potentio-
meteri'4) Ferroresonance stabilizer; 5) Differential amplifier; 6) Direct',-
current bridge; 7) Kil'ovoltmeter; 8) 17-h-voltuage rectifier; 9) Trigger-
pulse generator; 10) High-voltage pulse generator; 11) -Low-voltualge rectui-
fier; 12) Oscilloscope.

if 6
86432.
S/181/60/002~/011/016/042
3006/B056

8 614.3 2.
S/1 E3 601002101110161042
3oo6x3o56
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2143A
S/120/61/000/002/029/042
2 2-7, 1
M E210/E594
AUTHORS: Komarov, G. V. and Regell, A. R.
TITLEa Simple Method of Recording the Peltier Effect at the
Boundary Between a Solid and a Liquid Pha~e
PERIODICAL: Pribory i tekhnika eksperimenta, 1961, No.2, pp.160-161
TEXT: A. F. Ioffe (Ref.1) predicted and W. G. Pfann et al.
(Ref.2) and J. M. Bardeen and B. S. Chandrasekhar (Ref.3) confirmed
experimentally the influence of the Peltier effect on the movement
of the boundary between the solid and the liquid phase of some
metals and semiconductors. It was found that in the case of an
instantaneous change in the direction of the current after
establishing the boundary in the equilibrium condition, the
initial speed of movement of the boundary will be
vo = 2Pj/qb
where P is the Peltier coefficient for the boundary between the
solid and the liquid phase, j is the current density at the
phase boundary, q - specific fusion heat and 6 - the density of
the material. This phenomenon enables controlling the speed of
Card 1A

Simple Method of Recording S/120/61/000/002/029/042
E210/E594
growth and, consequently, the quality of the produced crystal and
also determining,_ the magnitude of P for which it is sufficient
to measure the initial speed of movement of the boundary until
it changes appreciably under the influence of the temperature
gradient. The previous mentioned authors observed the movement
of the phase division boundary by means of a microscope and they
recorded the position of the boundary at time intervals between
5 and 40 sec. For a more objective and continuous recording of
the movement of the division boundary of the phases, which enables
obtaining more accurate values of the initial speed,.the authors
of this paper carried out the experiment described. For the
observations they used bismuth, which has a considerably higher
Peltier coefficient than other metals and also, due to its low
fusion temperature, the experiments can be carried out in a glass
ampoule. The glass ampoule (Fig.1 A), 10 to 20 cm long, about
I cm diameter,with molybdenum leads, filled to about half with
bismuth, was placed horizontally into a cylindrical furnace 11 with
aslot at the top for illumination and observation , The temperature
gradient was in the axial direction so that a phase boundary was
Card 2/

11411
Simple Method of Recording S/12o/61/000/002/029/o42
E210/E594
obtained which was perpendicular to the axis of the ampoule.
The image of the phase boundary was projected by ;the microscope
M and the mirror _t3 into a dark chamber. The meniscus at the
phase boundary enables arranging the illuminator and the microscope
in such a way as to obtain a mirror image in the microscope from
the solid phase without any light reflection from the liquid
phase. It is also possible to have an opposite distribution of the
light and shade. Inside the chamber there is a drum (I with a film
It placed into the jacket K with a horizontal slot parallel to
the drum axis. For obtaining a sharper image, a cylindrical lens
,n is fitted into the slot, The slot with the cylindrical lens
is fitted in such a way that from the field of view a strip is
cut out which is parallel to the axis of the ampoule and will
consequently be perpendicular to the phase boundary. A uniform
rotation of the drum by means of the motor and the reductor
enables obtaining on the film a graph of the movement of the phase
division boundary with time. An example of such a graph is shown
in Fig.2; on the length (vertical)axis the magnification is 220
times, on the time (horizontal)axis the time markings denote 1 sec
Card 31~

IV"
Simple Method of Recording S/12o/61/000/002/029/042
E210/E594
intervals. The microscope has a focal distance of 2 cm, giving
a magnification of 100 times (magnification of the projection
220 times), length of the photocamera I m. For a film sensitivity
of 65 rocjr (GOST) units, clear pictures can be obtained for a
film speed of 2 cm/sec, so that a movement of the boundary could be
recorded with an accuracy of 5 11 along the length axis and an
accuracy of 0.1 see on the time axis, which is higher than the
results published by the earlier mentioned authors, A further
advantage is that graphs can be produced more easily. There are
2 figures and 3 references.- 1 Soviet and 2 non-Soviet.
ASSOCIATION2 Leningradskiy gosudarstvennyy pedagogicheskiy
institut (Leningrad State Pedagogical Institute)
SUBMITTED,- January 11, 1960
Card

24909 S"' 1,31 /'k-1 1,003 /0'36 " "()-I
-7 B 102 I/B 2 G 1
J" nn,~ A.i
E z~ r f lwa s x~ 1 tin, filirs upor, the vaiu~ cf
I r ~j i c i e .1 c
a, ro. 6, 1961, lol,3-1"67
4 J f -I n f i m s- ~r e n e r d' i v e r v
-~i-d r:,- ancmu7 ies observabl e in
r ma rla'!?rials~ Studies 'MAe or rall'irlur'.
e surface levels and ot'-.~r
i'rn~ rist, c. ar enlargemen-. of the hiole con~,-.nl.ra-
-x r t an a c ~ e p r chara c t e r. Scanlon and
Z f ' ':1 ~ ~ _L
ha-.7,2 main-~aired the impossibility of oba4nir.,u a
i- Hal' ~~cnszarlt ~.n tellurium 'i'ms
~which is aasilv
M rgle crystal s'~ . The authors of che present caper
~;trange result by c~,nducting a new inves-igation,
C~ are .-uresen~ed ~iere, The initial material was
-wice resub~ imated in vacuum and subjected to zone

.-P 9 - /1, , 1, / S ' 6
9 0 0 0 0 b/
7z ~ 02,1BI, 0 1
r
r~, er cw The impurity concentr,Lticn Vas
'lr~' nnanhz,3 of sip--n of 7he
btainA by spurtarJng in vac~.u,.,m
~an- -d f ir, o c
T r - j
1:1: -cn,;ta-nr :i und
.171ometer circua'
in
.-opra'urp
-Ai iie ai r a rccm e.-
n i 11 r r,,:,P-n and uth,?n steadily
C-r
T, n1!c-,-.-.-.:7,i!:--i-1net al"clvi-d fields up to 3600 oe to be
'T (-n 1-1. and !.'a chick Te films. is scow-
I A . nrfj, ~T 71 .v e r e d r a w Pfcr 9 (T) was almoSt-
i-n. o,, ail f,.Ims ( il: drcpped slight'
i ly on neating
r, q1I filie~; found to be considerably lower compared with
e.- ~cr 7: z i e T e i was, at most. equal to 70~;() cm"llcoul,
H..
Ti lues
1 -ie corresoondina ? va-
if --urve I IF-1g, 1a), taken from a

24909 S/181/61/003/006/006/031
Effect of defects in tellurium films ... B102/'B201
thermally untreated film is extrapolated, = +250 0C is found for the
temperature of the change of sign of R H' It may be assumed, however,
that the linear extrapolation is not justified, and that film I exhibits
no change of sign of RH at all. A thermal treatment of the films
12000C, 1 day) sufficed to attain a change of sign at 1500C (Curve II);
a second thermal treatment yielded a change of sign at 1170C (Curve III).
On the 144 thick film (Curve IV prior to, Curve V after heat treatment)
the temperature T was found by extrapolation to be =!110 0C, whereas on
a 1.14 thick filmothe thermal treatment practically had no effect
(Curve VII). If only carriers of one sign are assumed to appear in Te
films, the mobility may be calculated from R H and ? . While in massive
Te, between -t-200 and -1000C the hole mobility is between 1500 and
2500 cm2/v-sec, it is not larger than 500 cm 2/v-sec in films. Numerically,
the following values were obtained:
Card 3/1

24909 S/181/61/003/oo6/006/031
Effect of defects in tellurium films B102/B201
0 N
Sample T, C N n(T 0 B(I. 01
Te single crystals -40 1.85-1015 1-56-1o15 1.46
(Ref. 3) 0 7
300-4 film (11) +150 1.45-101' 1.27-101 1.05
300-p film (111) +117 6.1 -io 16 7.7 '101 6 1-34
14-4 film (V) +110 2.17-101 7 6.9 -iol 6 2.03-4
n(T) is the ratio between impurity concentration N and carrier concentra-
tion; B denotes the mobility ratio. B2 if +1. Ya.Ye.
~Td
Pokrovskiy is mentioned. 0. D. Yelpatlyevskaya is thanked for assistance
and discussions. There are 2 figures, 1 table, and 5 references: 1
Soviet-bloc and 4 non-Soviet-bloc. The references to English-language
publications read as follows: Ref. 2: W.Scanlon, K.Lark-Horovitz.Phys.Rev.
72,530,1947; Ref-3: T.Fukuroi.RITU,4, 353,1952; Ref. 4: T.Sakuroi,
S. 11Aunesue.Phys.Rev.,81,;, 921,1952.
V
Card 4/161'

24910 S/181/61/003/006/007/"031
7 0 0 B102/3201
AUTHORS: Yin Shih-tuan and Regell__,__A. R.
TITLE: Some anomalies of the electrical properties of tellurium
films with selenium impurity
i""'RIODICAL; Fizika tverdogo tela, v. 3, no. 6, 1961, 16a6-169o
TEXT-. An anomalous change of the electrical conductivity and of the Hall
offect with an extremum at 0.1 at,'.-%Se has been observed on cast tellurium
~anples with selenium impurity. This anomaly is most likely observable
also in films of the same composition. This assumption has been checked
hy the authorfi; relative results are presented here. Te films with up
to 0.5,, Se were sputtered onto mica backings by Vekshinskiy's method
(2000C" in thicknesses of 1-2p. As is shown in Fig. 1, the results are
fy~jical of these films. Here, curve III shows the Hall constant R H
(4--i Cri /coul) as a function of the Se concentration at +200C; curves I
and 11 show the resistivity (7, ohm-cr.,L) change at +20 and -1000C,
respectively. The hole mobility in the samples was calculated by formula
Ca-rd

24910 S/181/61/003//oo6/007/031
Some anomalies of the electrical ... 3102,/E2CII
u = ac H ; its Se-concentration dependence shows a distinct maximum V<
at C).2at,,J. The data were poorly reproducible; under the same production
conditions rhe samples displayed deviations of ? and R H by the 2 - 3-fold;
the qualitative character of the oscillations, however, was conserved.
Despite 'he little accuracy of results it may be stated that the electri-
-al properties of these films display certain anomalies that deoend on
their composition. This may be explained by effects of the complex
forma'ion of impurities in tellurium. The rise of the Hall constant at
0.2,-11' selenium corresponds to a diminution of the hole concentration due
~c diminution of tne number of structural defects. This circumstance is
also decisive for the increase of the hole mobility and the decrease of
resistivity connected therewith. Te single crystals with Se impurity
displayed a resistivity minimum and a maximum of the hole mobility at
u.1 at-.,, Se, a result that differs considerably from that obtained for
f 1 imo. T%is deviation (as regards the amounts' can be exl-Ilained by the
of measur-2 -lent s and by the effect of the chain szr-,:.cture,
.!Q-'Cill is due to the Se impurities, upon the structural defects of the
fiimls. 0. D. Yelpatlyevskaya. is thanked for her assistance and
J4 SCUS~ior_.
-d

(/03r 4043
0
32071
S/181/61/003/012/005/028
B102/B108-
AUTHORS: Regel', A. R., Chudnovskiy, F. A., and Shullman, S. G.
TITLE; Influence of uniaxial plastic deformation upon the electric
properties of n-type germanium
PERIODICAL: Fizika tverdogo tela, v. 3, no. 12, 1961, 3589 - 3592
TEXT: The temperature dependence of electrical conductivity and the Hall
effect of plastically deformed n-type Ge single crystals (2.6 ohm-cm at
room temperature) were measured between 78 and 300 0K. Plastic deformation
between 1 and 63% was brought about at 8500C by means of a press of the
Institut kristallografii AN SSSR (Institute of Crystallography AS USSR).
The specimens were deformed in vacuo (5-10-2mm Hg along the [111] direction
at a rate of 1.7-10-2mm/min. The deformed specimens were cooled, ground,
and etched by means of CP-4(SR-4). The Hall constant, the resistivity,
and the Hall mobility were determined as dependent on temperature and
degree of deformation. The conversion from n-type into p-type Ge which
Card 1/3

32071
S/181/61/003/012/005/028
Influence of uniaxial plastic ... B102/B108
was observed with increasing deformation is ascribed to the introduction
of acceptor centers that are easy to anneal and that form an acceptor
level at -0,1 ev from the upper edge of the valence band. The donors of
the initia.-, n-type Ge are compensated by the acceptors already at a
deformation of-,5~a. Temperature dependence of the Hall mobility has a
maximum at weak deformations (n-type Ge) which is shifted to higher temp-
eratures as deformation is increased. At large deformations (p-type Ge),
the maximum is shifted to lower temperatures and vanishes at deformations
of over 63%. Electron mobility in slightly deformed (up to 2%) samples
is mainly influenced by scattering from impurity ions. The decrease in
mobi.-'.ity is ascribed to introduction of defects (vacancies and inter -
S"Itial atoms). X-ray studies showed that for deformations greater than
20% the crystal structure starts to become polycrystalline. For defor-
mations of above 30% up to--63%, the temperature dependence of the mobility
may be described by/Lt-T-1/2. This dependence may be explained by scatter-
ine, of holes from the crystallite boundaries. Defects loose their im-
portance when deformation is further increased. The authors thank A. A.
Sum,atokhin for assistance. There are 3 figures and 8 non.-Soviet reference&
Card 2/3

S~2071
181/61/003/012/005/028
Influence of uniaxial plastic ... B102/B108
The four most recent references to English-language publications read as
foll--wss E. S. Greiner,* P. Breidt, I. N. Hobstetter a, W. C. Ellis. J.
met., 1 81319 1957; A. G. Tweet. Phys. Rev., 12, 1245, 1955; A. Seeger.
Solid State Phys. in Electronics and Telecommunications. Acad. Press.,
London, 1960; W. T. Read, Phil. Mag., Ad, 775, 1954.
ASSOCIATIM Institut poluprovodnikov AN SSSR Leningrad (Institute of
semiconductors AS USSR, Leningrad)
SUBMITTEDg June 28, 1961
r1ard 3/3
V

32074
S/181/61/005/012//008/028
1
B
02/B108
AUTHORS: Yin Shih-tuan, and Regell, A, R.
I
TITLE1 Electrical properties of amorphous tellurium films and the
influence of impurities on the crystallization conditions
PERIODICAL- Fizikalverdogo tela, v. 3, no. 12, 1961, 3614 - 3620
TEXT: The electrical properties of amorphous films of pure tellurium and
of tellurium with 0.5 at~. I and 0.1 atc. Se were investigated. Resistivity
was measured by means of a P.3G8 (GZS-8') megger, the thermo-emf by means of
a galvanometer or an 3M-3 (EMU-3) amplifier. The films were condensed in
vacuo (-Ab1O"5mM Hg) upon quartz backings (at -40 to -500C) with silver
electrodes, The change in resistivity with changing backing temperature
and 'time of deDosition was measured (Fig. 1). The effect of absorbed
-1- -2
molecules on the crystallization of the films was studied in air (10 10
mm Hg). oxygen and argon (normal pressure). In argon, air and vacuum the
films were found to crystallize at +100C in less than 5 min. In oxygen,
crystallization at +50C took also less than 5 min.. For tellurium films
Card I

32074
S/161/61/003/012/008/028
Electrical properties of, B102/B108
with 0.,1 at7o Se the T(t) and Q(t) curves were similar in shape, the
singular-Lties were, however, between 300 and 400 min. Crystallization took
place also at +100C, Resistivity was by 2 orders higher than that of pure
tellurium. The ~)(t) curves of films with 0.5 at% I differed considerably
from the otherst Q decreased almost linearly with time and, after a change
in direction, remainedconstant, At the initial moment, Q is by almost
tw~ orders higher than Q of pure amorphous tellurium. At OOC crystalliza-
tion occurred suddenly after a few minutes (salient point of o(t) curve);
at lower backing temperatures the transition was smooth. The thermo-emf a
was found 4. Conductivity was
~-o increase with temperature (-150 to 000,
hole-type. The amorphous films showed hole-type conductivity, Con-
clusions- 0 and I impurities acceleratecrystallization and shift the
crystallization temperature. Se has no influence on rate and temperature
of crystallization, but changes the electrical properties. Argon ~as no
influence at all. The difference is ascribed to differences in chain
formation and orientation, From a, hole concentration and/mobility were
estimated for amorphous telluriumt jol7cm-3 and L!j0--2cm2 v-sec,
0, D. Yelpatiyevskaya is thanked for help and discussion. M. I. Aliyev
(Tr Inst, Fiz, i mat. AN Azerb. SSR, 2, 27, 1958), A, A~ Bashshali4yev
71
Card 2/4

S/~81/61/003/012/005/028
Electrical properties of ... B102/B108
(ibid., 9, 42, 1956), A. N. Gubanov (ZhTF, XxVIIt 2510t 1957),
B. T. Kolomiyets, T. F. Nazarova (FTT, 2, 174, ig6o) and I. Z. Fisher
(FTT, 1, 192, 1959) are mentioned. The're are 4 figures, 1 table, and
13 referencesi 6 Soviet and 5 non-Soviet. The three references to
En.-lish-language publications read as follows: G. Haas. Phys. Rev. 72,
1711, 19,17; T. Sakurai, S. 1,11unesue. Phys. Rev. ft2, 5, 921, 1952;
fi. Scanlon. Phys. Rev. 6, 72, 530, 1947.
ASSOCIATIONs Institut poluprovodnikov AN SSSR Leningrad (Institute of
Seiniconductor~ AS USSR, Leningrad)
WBIMITTED: July 1, 1961
Card 31A

KOMAROV, G.V.; REGELI , A.R.
A simple method for recording the Peltier effect at the boundary of
the solid and liquid states. Prib. i tekh. eksp, 6 no.2:160-161
Mr-Ap 61. (MIRA 14.9)
1. Leningradskiy gosud;rstvennyy pedagogicheskiy institut.
(Thermoelectricity)

S/058/62-/000/0()8/075/134
A061^101
AUTHORS: Lange, V. N., Regell, A. R.
TITLE: Some properties of tellurium - sulfur and tellurium selenium
systems
PLUIDDICAL: Re"erativnyi zhurnal, Fizika, no. 8, 1962, 25, abstract 8E187
("Uch. zap. Leningr. gas. ped. in-ta im. A. I. Gertsena", 1961,
v. 207, 5 - 11)
TF,(T: Te-Se and Te-S systems possessing a specific molecular chain struc-
ture have been investigated. It is apparent from the-cited dependences of the
electrical properties of Te-S alloys on composition that an increase of elec-
trical conductivity, of carrier mobility (holes), and a drop of the Hall effect
are observable in alloys with an S content of-- 0.05 - 0.1 at.%. The presence
of two "special" points, wherein the properties change similarly as above des-
cribed, has been discovered for the Te-Se system. The first point is detected
at Se concentrations of - 0.1 at.%, while the other shifts toward the region of
high imp~irity concentrations In alloys prepared from purer Te. The anomalies
Card 1/2

Some properties of...
S/058/62/000/008/075/134
A061/AlOl
observed In the electrical properties are related to the formation of local
structural defects (vacancies related to chain discontinuities), which is c6n- -1.0 -
firmed by anomalies in density and hardness. 0
Yu. Allshevskiy
[Abstracter's note: Complete translation] I
Card 2/2

S/181/62/004/004/034/042
B102/B104
t ri, 0! J, Iblova, id. and IWL!,el A. R.
Uicrohardnesj of 6ermanium of different conductivity
Fizika tverdo6o told, v. 4, no. 4, 1/062, 1053-1055
.EXT: '."he fact that the mechanical properties of solids are con-
siderabl,y ciian6od when impurities are admixed may imply that a relation
e-i.-ts botween free-carrier concentration and plasticity. This would be
of special interest in semiconductors wheae small amounts of impurities
(lo-1-10-5 alter the carrier concentrations by several orders of
Ma6nituae. ~Iicrohardness was chosen as a plasticity characteristic.
T!ie medsurementus aere made with germanium of different resistivities
usin6 a OPIT -3 (.t?;,!T-3) apparatus. The most probable values of microhardness
were determined by statistical averaging. Since microhardness of Ge
is anisotropic, all measurements were made on the (111) faces. Six
n-type and one p-type specimen were investigated; the resistivities were
between 3-10- 3 and 35 ohm-cm, the dislocation concentrations between
Card 112

S/1 81/62/004/004/034/042
,dicrohardness of germanium of ...
B1 02/B1 04
103 and 2.105cm-2, and the free-carrier concentrations between 1-4-10 14
1 Q
-3
and 10 cm . The resistivity dependence of the microhardness H(~) was
measured for these specimens after polishing or grinding the surface.
H(~) ,-ias in all cases a very weak function: When q was varied by almost
D orders of ma6;nitude, H varied by only-7;L For the purest specimens
H was alliiiosL constant (-925kg/mm2) for q*~ ohm-cm, when I was reduced
2
to 0.003 ohm-cm, H decreased to 870 kg/MM T. A. Kontorova is thanked'
for discussions. There are I figure and 1 table.
il 'J, _~ G C I AT 101. institut poluprovodnikov AN SSSR Leningrad (Institute of
Semiconductors AS USSR, Leningrad)
December 3, 1961
ED
Card 2'/2

RE^ELP A.R
Change in current carrier mobility in metals and semiconductors
caused by melting. U-kr. fiz. zhur. 7 no-8:833-835 S 162.
(MIRA 16:1)
1. Institut poluprovodnikov AN SSSR,,Leningrad.
(Electric conductivity)
(Metals at high temperatures)

ABLOVA, M. S.; REGELI, A. R.
Microh&rdness of germanium with various conductivity values.
Fiz. tver. tela 4 no.4*-1053-1055 Ap '62. (MIRA 15:10)
1. Institut, poluprovodnikov AN SSSR, Ioningrad.
(Germanium cry-stals-Electric properties)

GUBANOV, A16ktifiridr- Ivrinovich; HEGELI, A.H., doktor fiz.-Illatem.
nauk, otv. red.; ZAYCHIK, N.K., red.lzd-va;
KONDRATIYEVA, M.N., tekhn. red.
(quantum-electron theory of amorphous conductors] Kvantovo-
elektronnala teorila amorrnykh provodnikov. Moskva, Izd-vo
AN SSSRP 1963. 249 p. (mia 16:11)
(Semiconductors--Electric properties)
(Quantum theory)

LIKHNITSKIY, M.I.; REGELI, A.R. -, daktor fiz.-matem.nauk
Prospects of the application of Hall e.m.f.-transducers, Vest.
AN SSSR 33 no.6:53-55 Je 163. (NIRA 16:7)
(gall effect) (Transducers)

KuRiihuvy G.V. RLGELI A.R.
; --- - - - I . I- - --
Conditions for the onset of fluctuations in the soli5-1-iquid interface
in bismuth. Fiz. tver. tela 5 no-3:773-777 Mr 163. (MIRA 16:4)
1. Leningradskiy gosudarstvennyy pedagogicheskiy im--titut imeni
A.I.Gertsena i Institut poluprovodnikov A14 SSSR Len-ngrad.
(Bismuth) (Grystallization~ -

ZOLYAN, T.S.; RLC.E[,', A.R.
Electric conductivity and thermo-P.M. of U20~? inSthe solid and
liquid states. Fiz. tver tela 5 no.9:2420-24 163.
(MIRA 16:10)
1. Institut poluprovodnikov AN SSSR, Leningrad.

F,hGhLI A.R.; .1"AGM11.1 B.G.
Temperature del---ndence 0 f 7he --ffect of a sLrong elecitic field
- - - c
in polycrystalline selenitoa. Fiz. tver. tela 5 no.10:29914-2921
0 163. WIRA 16:LL)
1. IriaLltut p-luprovodnikov AN SS~~R., Leningrad, i Jnstitut, fiziki
AN Az. 33ft, ~aku.

5/16 1 /63/0051003,13-, 11 /046
B1 02/33 1 SO
A U T 1-134' S~omarov, Q. V. , and Rc:~el A. R.
TITLE: Conditions for t"e vibra~.-Joi of the solid - liquid interface
I
in bismuth
PEhIODICAL: Pi,;zika tverdc);--o tela, v. 5, no. 3, 19"3, 773-777
t~ 0
TEXT: The movements of the bismuth crystallization front in various tem-
perature distributions was investi:-ated ir. an exoerimental arrangement
n -
slit-1-ilar to that used by Pfann et a!. (j. Electronics, 2, 597, 1957).
CrjstaL1-6z-t=11 fixnt vibrations were found to be related to the temperature
gradient. in t he experiments tiris was varied between 10 and 100 deg/cm.
Vibrations occur ill the gradients exceed 40-60 deg/cm, becoming complex
and irregular, .-,,-ith rising amplitudes, as the gradients increase. When
the gradient is reduced, regular vibrat-Jons (period .3 sec, amplitude
-154) are established at 60 deg/cm, and at cLO deG/cm they cease. When it
is raised,regular vibrations do not start until '00 deg/cm, becoming
irregular again at hi~;her gradients. At constant gradient regular
vibrations can be maintained ~`or hours. First The authors consider the
Card 1/2

/63/005/003/011/046
Conditions frr 2102/B-160
possibiliLy of' t ",,e ctffect n~- r0sui t Of interaction between the
01
main thermz-` I -'; due to t"-- gradient and the additional
minute flow due to periodic 6oli~""cat~on -nd melLin~' at the front..
Approximate calculation snov--s tl=t the additional temperature gradient is
S."lialler by aimost t-ao orders of -,&.:,nitude than the basic artificially
maintained one. The vibrations c-~nnot therefore be attributed to this
interaction. Two ot-er -jossible explanations failing, the authors finally
assu.me that it mio-ht be due to increaoed convective flow with rising
te.mnerature -radient, .-;hi-c- would cause a chan-eover from laminar to
turbulent motion for the licuid at the front. This,in its turn, would
cause the constant supply of heat to the front to become variable. There
are 5 fi,-'-u--es.
AS30CIATION: Lenin.-raadskiy josudarstvennyy peda=ogicheskiy institut im.
0
A. I. Gertsena f-enin-rad State Pedagogical Institute imeni
~~ - 0 -
A. !. Qertsen); institut poluprovodnikov AN SSSR, Leningrad
(institute of SemicGnductors 'IS UISSIR, Leningrad)
TIPT %'j) October 1, 1962
Card 2/2

S/08 65/0 1 4/OC)-,/C)l 3/1013
R. I 02YB 186
AUTHORS: Re~ell, A. R-.,-Patyanin, S. I.
TITLE- Electrokinetic effects in liquid mercury
PERIODICAL: Atomnaya energiya, v. 14, no. 1," 1963, 122-127
TEXT: The anomalous effects observed in thin samples whose thickness is
comparable to the mean free path of the carriers are ascribed to the
fact' that only a part M of the carriers is elastically reflected at
the inner surface of the sample, the rest (170 being diffusively
scattered. Therefore in a thin boundary layer (-,3X) the mean free path
and concentration of the carrier are smalle; than inside-the sample..
Pikus and Fiks (Fizika tverdo.go tela, 1, 1062, 1147, 1959) have shown
that electrokinetic effects can appear in liquid conductors of small cross
section for which (1-~) ~ 0. These effects were investigated by the
author for mercury at room temperature, emphasizing,especially 1) the
electrokinetic mobility a of the mercury surface measured in a capillary
system, and 2) the TIg level difference in two alike capillaries through
one of which, however, a current was passed. The capillaries were
Card 1/3

S/0,99 '171,~.
/ U'j I V '/..) 13
Electrokinetic effects in -DI02/BI86
evacuated to -~10_3 Mm C' a nd provided with a seal '104 3ivisions/cm~
U . e ~ I
'Platinum electro-les were alopted in order to kee-) do-.,in the Peltier effect
to a miinimumi. The electrole temperature was measured by iron - constantan
couple to an accuracy of -2-10 _)o C ani the Hg temperature could be very
accurately fixated by the Hg level, ( -400 divisions/ NO. On the current
being passed through one of the capillaries the level displacement rates
were of the order of 10-) and 10- cm/sec. These observed velocities
are equal to a. The number of diffusively scattered carriers was
Y~ L,cy dQL X
letermined from the relation (1-0 p 2 + p 2 L is the
O.1en4 Vt 0.8nenX VR
a,. I
c
)'Ilary leri-th; the Hg resistivity; R t~he resistance of the capi'lary;
d the specific gravity of Ilig; V the potential; -et the viscosity of Hg;
e,n,X denote the charge, concentration and mean free path of the carriers;
is a function of the electroosmot4c pressure characterizing the level
d i splacement; .The temperature of the boundary layer of Hg was determined
from T = T t + V2 ln(r o/ Iro )/2n ALpR, where Tt is the Hg temperature in the
Card 215

S1108916310141001,1013/013,
Electrokinetic effects in ... B102/B186
case of thermal equilibrium, r 0 and rp are the external and internal
capillary radii (r -10- 3 -2
10 cm) and A is the thermal conductivity
p 22 -3 -7
of glass. With n = 8.4-10 mm and 3.7-10 cm it is found that
a = (2.5+1.2)!10-3cm 2/v. sec and (1-~.) (2-4�1-4)'10-' (T 20-30'c).
From the elecLrokinetic mobility it was found that (1-9,) aq/0.1enX2
-2
-2.1-10 . There are 3 figures.
SU311.11ITTED: August 15, 1962
Card 3/3

ACCESSION NR: AP011769
S/0181/64/006/001/0"134/0331,.
AUTHORS: Komarov, G. V.; Regell, A. R.
TITLE: The cause for oscillation of the solid-liquid phase interface in bismuth
SOUICE: Fizika tverdoro telaj v. 6. no. I., 1964p 334
TOPIC TAGS: bismuthj solid-liquid phase, solid liquid interface., interface
oscillation
ABSTRACT: In their former work (Frr, 3) 773, 1963) the authors described the
conditions at which the solid-liquid phase interface assumed an oscillatory motion
about some zone of equilibrium. Such oscillations exist only at relatively high
temperature gradients (about 50 degrees (G)/cm). It was later observed by studying
particles of bismuth oxides floating on the liquid that convection currents
originate at some moment as the temperature gradient is increased. These turbulent
currents alternately melt and solidify a layer at the interface, thus causing the
oscillations of this zone.
kSSOCIMON: Gosudarstvenny*y pedagogicheskiy institut'im. A. I. Gertsena., Len-
ingrad (State Teachers Institute)
Card ]I-.b
IZZZ~-

ACCESSION LIZ: AP4034923 S/0181/64/006/005/2414/14-29
AUTHORS: Rogelt, A. R.; Taliyev, B. G.
TITM: Influence of cadmium, tellurium, iodine, and salfur impurities'on the
electrical conductivity of selenium in strong fields
SOURCE: Fizika tverdogo tela, v. 6, no. 5, 1964, 1424-1429
TOPIC T-A.GS: cadmium, tellurium, iodine, sulfur, electric conductivity, selenium,
electric field
ABSTF-kCT: The electrical conductivity of selenium with cadmium, tell iUM,
iodine) and sulfur impurities was studied at electric fields of 3 x-2z v/~m in
a temperature range of 20-160C. The percentages by weight of Cd and Te were
0.1, 0.15, 0.2, 0.3, 0.4, and 0.5. Pure selenium and the impurity were melted
4n evacuated and sealed glass and quartz ampules at temperatures of 340C and 650C
J.
respectively. During the melting the am7oule was mechanicallyvibrated. After
3 hours it was cooled to 180C and held t6re to allow crystal formation. The
substance was then removed from the ampule and crushed, and test specimens were
produced in the form of plates 6 mm long, 5 mm wide, and 0.3-1 mm thick., The
plates containing Cd and Te impurities were annealed at 160 and 180C for
Card 113

ACCESSION NIR: AP4034923
30 min and for 2 hrs respectively. The specimens containing iodine and sulfur
were prepared sinilarly. The method uso'd for measuring the electrical conductivity
was the same as the one described by the authors in an earlier work (FTT,, 5, .
2914, 1963). The results of the experiments showed that the conductivity increased
initially with the increase of the impurity (it reached a maximum at 0.3% for Cd
and 0.151M for TO and then fell. From the e*xperimental results the authors
determined the factor P in the formula C- = GO e 13 ~_D' for the
conductivity given by Ya. 1. Frenkell (Sobr. izbr, trudov, 2, 217. Izd. W SSSRV
Mr.L., 1958). The values of p for various temperatures are shown in Fig. l'on
the Enclosure. Orig. art. has: 5 figures and 3 tables.
ASSOCIATION: Institut poluprovodnikov AN SSSR, Leningrad-(Institute of-Semi-
conductors AN SSSR); Institut fiziki-Azerb. SSR, Baku (Institute of Physics,
Azerb. SSR)
SUBMITTED: 251,1ov63 DATE ACQ: 2%~y64 ENCL: 01
SUB CODE: S4 M NO REF'SOV: 010 OTHER: 006
Card 2/3

ACCESSION NR: AP402642o S/0181/64/006/004/1001/1005
AUTHORS: Regal's A* Re; Tagiyev, B. 0.
Effect of bismuth impurities on the electrical conductivity of polycM
TITLE:
talline selenium in strong electrical fields
SOURCE: Fizika tverdogo tela, ve 6. no* 4. 19641 1001-1005
TOPIC TAGS: semiconductor
selenium, bismuth, pulsed field,, Frankel fwmulaj,
impurity affect, electric conductivity, electric field
ABSTRACT: Measurements were made with pulsed fields up to 40:L04 V/cm in the
teirnperature interval +20 to -130C. The choice of bismuth as the impurity was
based on its use as a coating of selenium in the preparation of the latter as'a
rectifier on an aluminum base. Results of measurements show that bismuth impuriv~
ties up to 0.1% byweight increase the electrical conductivity of selenium, but
tha' further increase causes the conductivity to decline. Bismuth impurities
dimi'nish the ooefficient P in Frankel's formula or - (foe The observed 4
effects in a strong field; for pure selenium and bismuth-doped selenium, agree
1/2

i;ACCESSION NRs AP402842o
rather well with Frenkel's theory through a wide range of electrical field and of
temperature. The effect of bisauth impurities., as with heat treatment.. is
expressed cl-defly in increase in electrical conductivity of the selenium, and the
dependence of this effect on the strength of the electrical field is rather weak.
The authors conclude that the effect observed in bismuth-doped selenium
is
associated primariiy with change-in concentration of current carriers and not with~:
change in mobility. Orig. art. hasi 5 figures.
,ASSOGIATIONz Institut poluprovodnikov AN S=, Leningrad (Institute of Semi-
conductors AN SSSR)j Institut fisiki AN Azerb. SSR.. Baku (Institute of Physice
!AN Azerb. SSR)
SUBXMEDs =ep63 DATE ACQs 27Apr64 RM 1 00
"SUB CODEs HC
NO REF SM 014 OMRt -010
r

a

4'
A
CCESSTCrl NRt AP40449 73.

per d nim ia 4:1

y 6f,
Lt
T12

t'~:aj
2
t6
~

al -

3
A
Jo. W M 'Z? ,26 ja 4f

a:,:a s
n Z. aI Lne S e e n _n s-_l_,CnZ

A. it.
nce
-;';7,. zhur. -0.5.Z,71-476
Lenincrb

ZOLYA" S' A. !-I-.
, -~ _n
ana--
LlectroCOndUCLivity a n d rm c- e - 7! - f. 'r.V 4 o L~e
in the solid a-rill 1-1quid states. F-iz. tvor. tela 6 no.5;I520-1-11524
.~ I
ily 1 ~-,4. (MIT, 1 17: 0)
M, 'ux I
1. Institut poluprovu--nikov LIT, SSSIL, Lcningra,--.

XCMAROV, G.V.; REGELI, A.R.
Cause of oscillations in the solid - liquid interface in bismuth.
Fiz. tver. tela 6 no.1:334 Ja 164. (KRA 17:2)
1. GosudarstvenW pedagogicheskiy institut imeni Gertsena, Lenin-
grad.

REGELIP A.R.J. doktor fiz.-matem. nauk; KOLENKO, Ye.A., kand. tekhn. nauk
Thermoelectric cooling and its practical uses. Vest. AN
SSSR 34 no.5t86-92 )+f 164. (KRA 17:6)

na u
ca-
es
-r A r Cl 11 ~l -C3 A'rl 5
(MIRA 1828)

i2i -'-RYrAlT-*l"SEV , V. L, , , 1-1 -and. teldm. nauk; RECD", A.R., dokt,-:- --Lauk
Joint research on semiconductors. Vest. AN SSS~-- '15 no.5:86-A-8
14Y : '05. (MMAL 181:6)

KOMI~d*?W, G,V.-,
__1 A.R.
E-ffcct of the orientation of a growing bisimuth cr-jstal on, the Peltier
coefficient for the solid--liquid interface. Fizz. Tver, 7 no.c-
!,~86-1489 My '65. (MIT-L-A IS.'5)
1, Leningradskily gosudarstvennyy pedagogiciieskiy irstitiA iEp-n*L
t
z .1
~er~-sena i Tnstitut poluprovudnikc~,r AN S3,911t. Leningrad

54865-65
w14803
cmsm NR: AP
AC
G'DR, Poland, Rumania, USSR, -and. Czechosl6v'alda. Proble
M
zation and coordin
atio
n are cons idere d. dailv bth hich
_y . e _cOmmissionj w
Iso provi es the guidel
ines. for the mutual effort.
efices,.
lachoslo.vak Academy of.sci in addition'to the general
management' on
of all the activities, also, ovej~sees.'a complex.of ~studies
zone structure and transport. phenomena. Research. is carried out in
several countries and coversthe. following areas- optical and.magnete
optical pherio'filena in semiconductors, . transp'e rt'PheTiornen- aiii-stronig
magnetic fields, - the effect of strong alloying. on~ changes. in zone atructure
.'zone structure and transport in amorphous and liquid semiconductors,,
band recombination processes.
Research into the physical properties. of se m'icondu'ctor compounds,_:-'
is under the auspices of the Polish Academy of, Sciencesi ~ Which:has;
made significant contributions in tha area. Iniies tigati n~ of electron
0
n se d tAcade
phenome .na o miconductor surfaces ard directe by'the e My
t Science .s. 'Re's e-arch'is conducted in sev'e'ral.dikect: ons of b6f~'scl--... I-
ard
2/.5

F-Vfr 1 /EVIT (m) /EWP e VT(z) E .7
NR: AP5006914
Card 1/3

L 45187"65-,.
ACC,3SBION DR: AP5006914

A73MITMD.- 160ct6k ENC

Im ]REP SOV:'
007 ,
004f
:
- .
,

CrV3/3

-7777-
7

L 8592-66 EWT(m)/EWP(b)/EWP(t) IJP(c) JG/JD
ACCESSION NR: AM19897 mi/018i/65/007/008/2567/2569
M '; ~ ... V Y, ~' 1, 13/.
AUTHOR: AndreyM A. A.; R%el 1, A. R.
TITLE: coe cl-&7 in 119HId allqyj~bf the Ng-TI system
SOURCE: Fiziks tyerdogo tela, v. 7. no. 8, 1965, 2567-2569
TOPIC TAGS: Hall coefficient, mere alloy, thal3ium containing allcy., liquid
property, chemical valence
ABSTRACT: Th reconcile the disparity between the experimental data on the -Es,11
effect in liquid metals and the predictl= of the theory of free electrons, the
authors performed on the Ng-Tl system the experiments made on Hg-In by N. Cussack
and P. W. Kendall (Phil. Mag. v. 8, 157,, 1963). The measurements were made with
-Iternating current in the same ampoule, to avoid errors due to the size effect.
The calculations were made relative to pure mercury, for which the Hall constant
was taken to be R - 7.6 x 3.0-5 cm3/Coul. The results are illustrated In Fig. 1
of the Enclosure and confirm the quasi-crystalline model used by Cussack and Ken-
clall to interpret their results. However, the authors indicate also another pos-
sible interpretation of the phenomena, wherein the results can be attributed to
variation of the valence of the heavy-element atoms. Confirmation of this inter-
pretation calls for additional experiments. Orig. art. has: 2 figures.
Card 1/3

L 8592-66
ACCESSION NR: AP5019897
ASSOCIATION: Institut poluprovodnikov AN SSSR., Leningrad (Institute of Semicon-
ductors AN SSSR)
stmmTTED: ogApr65 ENCL: 01 BUB CODE: - SSp M
NR BEF SOV: 000 OTHER: 002
Card 2/3

L 8592-66
ACCESSION NR: AP5019897
7. 0~~
qC
ENCLOSURE: 01
80 tog zo *9 60 89 fog
90 4~ to T1.1n. at. %
rL
Fig. 1. Hall coeffici ent in the Hg-Tj1 system (left) as a function of the
T1 concentration, and comparison of the effects of Tl and In on the Hall

/EWp(i)/T/FWP( )/ZWA(h) AT/WH,
L 1346-66 VOITM/Ewp(e 11F.WT(M) b
:;AGCESSIONNR:
*qA<
AMHOR: At o-wth4~wtical scl
d ev A.Aj.'kV Leoces)
of physic
TITLE: Conference on band structure, optical, and eleotridol- pvpertien of
liquid and amorphous semiconductors
SOURCE: AN SSSR. Vestnik, no. 8,'1965, 70-72
TOPIC TAGS: electronic conference, semiconductor. band structure, sesicanductivityl
semiconducting material, semiconductor research, glass, tellurium, selenium,
semiconductor a3loy
~ABSTRACT
A Cnfere*n-c eon the Electronic Band Stj~icttjre, -Opij[~il and El~~
ic
Properties Of Semiconductor LiQuidS and AmorabMs SWida -was held on
4-7 Ma `V,
y In Prague, under the sponsorship of thp-ti e 'of Solid State
jns tut
Ph
ysics, Czechoslovak Acad=y of Sgiences4e
Wesearch data.werediscussed
on electronic processes in amorphous- ermanium, seleniumi and tellurium
gi
liquid
semiconductcirs and metals; aMd chalcogenid RUss ~,Both-Western; i
participated in discussions,
i Card 1/~

L 1346-66
AGM.I.SION NR: AP50M"Vi
Ya. Tauts ~dz_echoslovalda) and R ania) presented
papers- on amorphous germanium, in which they outlined the first experi-
!mental data on direct optical observation of the energy band structure.
I iData on the edge absorption coefficient hinted on the conservation'of the
energy band-structure, which Is also characteristic of crystals in substances
with near-order atomic arrangement.
In the papers on liquid alloys of the mercury-thallium system A. A.-,
Andreyev and A. R. Regell (USSR) noted considerable deviations of'the-eil
perimental Hall constant from thetheoretical value. From th
e measure-
ments of the Peltier effect at the phase boundary in bismuth, A. - R. Regell
deduced a difference in properties near the surface and in the.bulk of a mol-.:
ten crystal.
In a complex study of optical, photo and electrical properties of.
chal6ogenide glasses, B. T~' Kolomjyi R) showed the presence of,
localized enqxgX levels -and.* evaluated the activation energy.
Card 2,43

Card 31
~ t:r.

L 00765-66 EVIT (1)/T jjp(c). GG
ACCESSION NR: AP5oi2562 UR/0181/65/00T/005/1486/~3489
3
AUTHOR. Komarov, G. J.%e~'.
TITLE: Effect of orientation of a growing 3z_,~.=_ttArystal on the Peltier coeffi-
cient for -the interface between the solid and liquid phanea
i SOURCE: Fizika tverdogo tela, v. 7, no. 5, .1965, 1486-1.489
TOPIC TAGS: Peltier effect, bismutb,_!Zry
_gtpl groy~h., phase transition, tbermo-
ielectromotive force
ABSTRACT- The authors measuredthe coefficient of the Peltier effect between the
solid and liquid phases of bismuth by a method proposed originally by A. F. Ioffe i
ployed later by others. A description of the method
(zhTF v. -6, 478, 1956) and em
and of the apparatus was given by the authors elsewhere (FTT v. 5, 773, 1963; PTE
V. 2, 100, 1961). The values of the Peltier coefficient obtained in this manner
showed considerable fluctuations which did not diminish when very pure bismuth was
used. These fluctuations are attributed to the different orientations of the bis-
Muth crystals grown from the melt. To check on this assumption, the Peltier coef-
ficient was measured with the current flowing in a direction suchthat the bismuth
solidified. This made it- possible to determine the orientation of the growing
crystal by x-ray means. The results showed that the Peltier coefficient depends on.-.-..
11 Ca,d V2

L Of 765-66
i-ACCESSION NR: Ap5oiP562
the orienta 'tion of the growing crystal and is a function of the angle between the
direction of the current line and the trigonal axis of the crystal. The values of
the thermo-w-emf coefficient are calculated for the solid and liquid phases of bis-
muth at the melting temperature. In the case of the solid, the values were 120
10 or 70 � 10 4V/deg in the directions parallel and perpendicular to the axis.
For the liquid, the emf coefficient was 45 � 10 VV/deg. This differs greatly from
the value of 2jiV customarily cited in the literature. The Peltier effect coeffi-
cient fluctuated between 18 and 34 VV. The authors propose to investigate the in-
fluence of impurities on the Peltier effect in a separate paper. "The authors
thank A. I. ZaslavsM, ar
gd,Ahe members of his laboratory for the labor-consuming
work Pe-rfo-r-me-d -indeie;fi&dng the orientations of our samples." orig. art. has:
I figure and 8 formulas.
ASSOCIATION: Leningradskiy gosudarstvennyy pedagogichgskiy institut im. A. I..
itu
0 iL
Gertsena nitud b~) "Iffshitut poluprovodnikov AN SSSR.'
Lenit ~State Ped o icglInstitul
Lening ad _I ~is eStoP~Seepl !nduct s%tSSAM
c or
ad%Cnstitute of Semiconductors AN SSSR
suBmiTTED: 14Dec64 ENCL: 00 SUB CODE: SS
NR REF SOV: OTHER: 005
005
2/2

L 04232-67, EWT(1)JnFr(ni)/EWP(w)/T/EWP(t)/LVI
C-* -.---T-.JR/0058
ACC NR-- AR6031875
/6 61000 /006 /E01 5/EO 15
AUTHOR: Ivoninakiy, V. A.; Regell,,.A...R.
41
TITLE : Electroihermic properties 'of a Bi2Te 3- Bi Se system in thiliquid state
2-3
SOURCE: Ref.
REF SOURCE:
1965, 183-192
zh. Fizika, Abs. 6EI18
Uch. zap. Lenningr. gos. ped. in-ta im. A. 1. Gertsena, v. 265,
TOPIC TAGS: bismuth telluride, bismuth selenide, bismuth system, conductivity
measurement, thermal emf measurement, thermoelectric Q factor
!ABSTRACT: The conductivity and thermal emf of a alloys of the Bi Fe 3-BI 2Se3
system of various composition were measured in the temperature Ange of room
temperature up to 800-900C. The thermoelectric Q-factor of liquid melts is
evaluated, and it is shown that it can reach a value of n=::L 0. 8. An evaluation of
the forbidden zone width yielded values of 0. 1 to 0. 15 ev. The conductivity jump
(hiring melting was 1. 3-5. 5 for the investigated alloys. Anomalies in the temperA-
Wre dependence of a in the vicinity of the melting temperature were detected.
[Translation of abstract]
S[T1',' CODE: 09, 07/
C 1/1 -- -- - --- mob

ANDHEY0,11 A.A.; RFGEL', A.R.
Hall effect in liquid alloys of the system fig - Tl. Fiz.
tver. tela 7 no.8:2567-2569 Ag 065. (MIRA 18:9)
1. Institut poluprovodnikov AN SSSR, Leningrad#

L 08322-6? EWT (m)_/E1W1P (w)/'E'.-/P (t)/ETI IJP (c) JD
ACC H1R:,1i16033734_ ____S_O__WfdE_CODE: UR/0058/66/000/007/EO13/EO13
~AUTHOR. Ivoninskaya, Z. N.; Regell, A. R.
iTITTE: Investigation of temperature dependence of resistance and
ItIiermoelectromotive force of bismuth-cadmium and bismuth-tin alloys
of eutectic composition
7E911
ISOURCE: Ref. zh. Fizika Abs
IREF SOURCE: Uch. zap. Leningr. gos. ped. in-ta im..A. 1. Gertsena,
Iv. 265, 1965, 172-182
TOPIC TAGS: b_f-muth alloy, cadmium base alloy, tin base alloy, meltinE
point, electri( conductivity, temperature dependence, eutectic mixture,,-
electromotive force
ABSTRAC"L': Mea:-.urements of the electric conductivity and the coefficien
of thermoelectromotive force a have been made at temperatures ranging
from room tempf-ature to 500C, for the following systems: Bi-Cd com-
pounds (40, 45 and 50 atomic % Bi), Bi-Sn compounds (38, 43, and 48
atomic % Bu), ..nd pure components of these systems. The measuring meth-
od is describe-., Anomalies of the temperature dependence a near the
melting point as a function of the heating speed of the system, are
discussed. anslation of abstract]
SUB C&7E: 09, 11, 20/
Card I /I n8t

ACC NIR:
5
SC)IJ11" C(-)
'1/01,~; -/6b '000/008/1025/1025
AUTHOR: Ivoninskaya, Z, N. A. 11.
TITLE: investigation of the 'kemperatu-P z-(-Iationship between t-he resistance and
thermoclectromoLive force ol' ;inuth-cadi-nium and bismuth-tin melts of eutectic
composition
SOURCE: Ficf. zh. Aletallurgiya, Abs. 8JI65
REF SOURCE: Uch. zap. Leningr. gos. ped. in-ta im. A. I. Gertsena, v. 265,
1965, 172-182.
TOPIC 'I'AGS: temperature dependence, thermoelectromotive force, bismuth
cadmium melt, bismuth tin melt, eutectic mixture, electric conductivity
ABSTRACT: Measurernents were made of the electric conductivity and the
coefficient of thermoelectromotive force in Bi-Cd (40, 45, and 50 at. 10 Bi) and
Bi-Sn (38, 43, and 48 at. % Bi) systems, as well as of the pure components of
these systems at temperatures ranging froni room temperature to 500C. The
measurement procedure is described. Anomalies were detected in the changes
of the coefficient of thermoolectromotive force near tile melting point, as a functi
of the heating rate of the system. [Translation of abstract] [NT]
Card 1/1 SUB CODE: 11/ UDC: 669. 765173:537. 3
l

ACC N': AR7000863 SOURCE CODE: UR/0058/66/000/009/E034/E034
AUTHOR: Komarov, G. V.-; Regell, A. R.
TITLE: Oscillation of the crystallization boundary of bismuth
SOURCE: Ref. zh. Fizika, Abs. 9E277
REF SOURCE, : Uch. zap. Leningr.- gos. ped. in-ta im. A. 1. Gertsena, v. 265,
1965, 163-171
TOPIC TAGS: oscillation, '/crystallization, crystallization boundary, bismuth,
temperature gradient
ABSTRACT: An analysis was made of the flow of the crystallization boundary of
bismuth. The test equipment made it possible to control the temperature gradient
from 10 to 100* /cm and to observe the behavior of the solid -phas e- liquid phase
interface by recording the shift of the crystallization boundary with time. Oscilla-
tion diagrams of the interface are presented for various temperature gradients.
For the temperature gradient below 40-60 deg/cm, the crystallization boundary
is stable and there is no pulsation; for the temperature gradient above 40-60
Card 1/2

ACC NR~ AR7000863
deg/cm, the interface begins to display an oscillation motion which becomes more
complex as the temperature gradient increases ; following which the oscillation
amplitude increases. The introduction of small tin additions into bismuth does not
affect the nature of oscillation of its crystallization boundary. The origination of
pulsations of the crystallization boundary is associated with the interaction of heat
.0
flux q in the melt, caused by the temperature gradient and the additional flux Aq-,!
produced by the periodic hardening and fusion of small sections of bismuth. Other
possible interpretations of the phenomena observed are given. P. Parkhutik.
[Translation of abstract] [NT]
SUB CODE' 20/
Card 2/2