SCIENTIFIC ABSTRACT PRIM, A.M. - PRIMAK, F.YA.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001343020017-0
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 14, 2001
• Sequence Number: 17
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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SIO 51/60/009/001+/006/03 4
E201/E191
AUTHOR: Primat A.M.
TITLE: Vibrational Spectra of Silicates. III, Equations
Representing Vibrations of Plane Silicon---Oxygen
Rings of Silicates _Y1 - 4
PERIODICAL; Optika i spektroskopiya, 1960, Vol 9~ No 1+7 PP 452-459
TEXT: The author analyses.theoretically vibrations of plane
silicon-oxygen rings of Dnh symmetry, present in many
silicates and bound by metal atoms to the crystal lattice.
Using complex coordinates to allow for symmetry7 general matrices
were obtained for reduced kinematic and dynamic coefficients,
Selection rules were found which were applicable to various types
of structure and symmetry. Symmetry types whose frequencies were
independent of the number of silicon atoms in a ring were
determined, The results of the paper can be used to interpret the
spectra of crystalline silicates. The paper is entirely theoretical.
Acknowledgement is made to B.I. Stepanov and N.A. Borisevich for
their advice.
There are 1 figure, 6 tables and 10 referencess 7 Soviet aDd
3 German. SUBMITTED: January 4, 1960, CaTd 1/1

30)
V. 1. j,r;

70), 5W, 24(7) SOV/48-23-10-18/3'Q
AUTHORS: Borisevich, 11. A., Makarevich, N. I., Pri ma, A. K.
Bardyshev, I. I., Cherches, Ye. A.
TITLE: Identification of Resin Acids by Means of Their infrared
Spectra
PERIODICAL: Izvestiya Akademii nauk SSSR Seriya fizicheskaya, 1959,
Vol 23, Nr 10, pp 1219-1221 iUSSR)
ABSTRACT: Coniferous resins, which essentially contain terpene hydro-
carbons and resin acids, have many industrial uses. As the
chemical analysis and the separation of the individual acids
causes considerable difficulties in a mixture of pure resin
acids, the infrared spectroscopic analysis of these substanc~~-s
is of particularly great importance. Hitherto, however, riot
many resin acids have been investigated in this way. In the
present paper the authors give the results obtained by in-
vestigating four such resin acids, the structural formulas are
mentioned: abietic acid (I), levopimaric acid (II), dextro-
pimaric acid (III), and dehydroabietic acid (IV). Solutionz
of these acids in CC1 4 as well.-a3 pressed samples of acid +
Card 1/2 potassium bromide were investigated by means of a IKS-11-type

SOV/48-23-1 0-18/159
Identification of Resin Acids by Means of Their Infrared Spectra
spectrometer. The spectra of the solution and the pressed sample
show practically no difference whatever. The spectra obtained
are shown by four diagrams. Their particular features are dis-
cussed. Within the range of the valence oscillations of the
groups C11, CH 2' and CH3 the spectra of I, II, and IV are very
similar, and only III deviates, which is due to the existence
of the group -CH=CH 2* The frequency of the bands corresponding
to the groups C--O and COH (1685 and 1282 cm- 1) depends only
to a small extent on the structure of the remaining acid
molecule; the intensity of these bands, however, differs con-
siderably according to the individual acids. Within the range
of the double bond C-C a band was found at 1544 cm-1 in I, II,
and IV, and one was found in III at 1631 cm-1 as well as one
-1 -1
at 1409 cm . In IV the band (1502 cm )y which is character-
istic of the benzene ring, was found, A number of intense
bands was also found in the range 800-1100 cm-1: 893 (1),
1007 and 1024 (11), 821 (IV) and 905 cm-l(III). There are
Card 2/2 1 figure and 1 Soviet reference.

PRIKA, A.M.; MAKAREVICH, N.I.; BARDYSHEV, I.I.; CHERCHES, Kh.A.
Infrared spectra of resin acids. Zhur. fiz. khim. 36 no-3:620-
624 Mr 162. (MIRIA 17:8)
1. Institut fiziki AN BSSR i Institut fiziko-organichesko~r khlmii
AN BSSR.

it . 'Is j. -VT CI!,
VOYTCVICII, A.P. [Vaitovic-I,, A.P.); A.11. [Pr~ma, BO!-, I
N.A. [Barysevich, 11
DetFrmining thp optical constarts GI synt'netic quartz "r, t'-e
infrared spectral region. Vestsi AN BSISR. Ser. fiz.-Lekh. nav.
no.2:39-43 1 64 . ( 1.1 T 1~1'. I P, : I )

PRIMA) A.M.; RMULRvXICH, N.I.; CHL!,MRF-3, Kh.A.; BARDYSRLV, I.I.
Study of the molecular association of resin acids by infared
spectroscopy methods. Izv. AN -qSSR.Ser.fiz. 26 no.10:1313--1316
0 162. (MIRA 15910)
1. Institut fiziki AN BBSR i Institut fiziko-orgamicheskoy
khimii All BS-';IL
(Desin acids.-Spectra) Nolecular association)

AUTHORS: Stepanov, B.I. anA~ ~A_M.
SOV/51-4-6 -5/24
TITLE: Vibrational Spectra of Silicates (Kolebatallnyye spektry Fililcatov)
I. Calculation of Frequencies and Intansities3 of `Silicate Spectral
Lines (I Raschat chastot I intensivnostay liniy spektrov Bililato7)
PERIODICAL: Optika I Spektroskoplya, 1958, Vol IV, Nr 6, pp. 734-749 kUSSR)
ABSTRACT. In order to investigate vibrational spectra of silicate glassee, it
is necessary to study first the simpler spectra of silicate crystals.
The latter consist of silicon-oxygen groups (tetrahedra, chains,
layers), which are sometimes bound by atems of metals and other elementa-z.
The present paper reports calculations of vibrational spectra of atoms
in silicate crystals. All calculations were made using tne method
developed by Yellyashavich and Stepanov kRef 17) for calculation of
molecular vibration frequencies. This approach made It possible to
simplify the solution of the problem and to discuss various crystals
using the same vibrational coordizates. All vibrations -were made
In the harmonic approximation, taking into accound deformational and
Card 1/2 torsional vibrations. Time equations wore obtained for vibrationa
of various types of symmetry. All these calculations are not difficult

S OV/51 - 4 - 6 -5/2 4
Vibrational Spectra of Silicates. I. Calculation of Frecraencies awd Inten3iti-eal
of Silicate Spectral Lines
but are very cumbersome. For this reason the authors give in tha!~-
paper onil y the main results 'which apply to valency vibration--.
Details and results of calculations for deformational -ibraticr.-? are
given elsewhere (Refs 19, 20). The authors obtairel frequencleF,
of normal vibrations, intensities and polaritationi uf vibraticual
lines of the following silicate crystali: pyroxenes (stran-bire is
shown in Fig 1), Si04 tetrahedra joined into an infinite layer
kas shown in Fig 2), p-cristobalite (structure if; shawn in FIg 3)
and p-quartz (structure is shown in Fig 4). Figs 5 and 6 shrm the
infrared and Raman spectra. calculated for all the silicates ment'-ore-'
above. The height of the lines corresponds to the relaitire value* cf
intensities calculated for random distributions of chain,3, layer.-F. ani
crystallites, of cristobalite and quartz, i.e. for glasses an~ strongly
disordered crystals. The results of calculations shovn in Figs 5 ani 6
are approximate (the main approximation.is dixe to exclusion of the
effect of deformational coordinates). There are 6 figures and 23
references, 16 of which are Soviet, 2 German, 2 American, I Fren,--',-.,
Card 2/2 1 Indian and 1 translation of a Western work into 1hissian,
ASSOCIATION: Institut Fiziki i Matematiki AN BSSR,-Belorusskiy uoqudaratvenny-1
Universitet k Institute of Physics and Mathematica, Acadmy of Scitincc-
of the Belorussian, S.S.R., Belorussian State Universit-1)
SUMMED: July 26, 1957

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13 '. -- - 4 -, % r ef - 4 s -,-. e ~, - - i- , f -!~ ' - ~ -' --' ' - 9': ,
3tuldy -,," ',nr- char?st,~! . t 4 ~l ' ~ r . :. :n n - I. -
,,, . ~:,. . - ."!.. J
Char,,-dea. "nur. knlim- ~ nc;~t-;"4z"A .:~ ~ 'I;- r: I' ~ . V.~ ,
1. fl7ilvl- AN D I- ~' -'-'R -,

PRIMA, A. 14.
Calculation of vibrational t3pectra of silicates. Trudy Inst.fiz.
I mat. AN BSSR no.21124-173 1 57. (MIRA 12:1)
(SilicatoB--Spectra)

AIMHORS: Stepan_zv. 3,1. j~r_d PxlzL~. Al~i_
L -
TITLE: Vi bra t.**~ r-attl ~j pr, ra ct, -Z ._~4 t 17, C, F 5~.zr -i i I i kat
I- re ta t C t-~ ~AEi IT, I `11!i rp ata t i i
,ip.jk.t-rcv _,;t;aVv2,i
PERIODICAL. Opt.'.~ax i 3 i;~a l'3 .5 , ITS
4M TPACT Ir. Pear' 1 (Ort-iaa 1 17, '117ar tale
P_Uth';ra V-1:a a_A; 'rcm,13 Of
V, 'or -a t2. an~
-J7 f tll~
c pn
of Pazt 1 svr~lrs Jl.~ tne Paz-.,r. R&7"_ ara
aisc. U.7,5(, -k1c. jnt,~Z.f-at glaS.36%r,
and of certa,-r, It Z?lat arA 'A_--ilicat5
Ara ciffer p~. ;.va --f V'l &r).-) 0~ bi 1 li -at5
-3 pe
!~cmnc~~:Ltion. --ar. be e,-) in' -, ~nl y 4f e-ri~-,;aat:F3 nf
- . , ~ i -,a ! r. t h e
S;O
an~~ infravej (Fi-g-a la.
a. 3a a& ~lpjiia.-. ('v* a'!-'_,:ate3 f,,rlTLtal..5~
Y119 for :.r~,7-tai- wit, ~t V-r- wili -er.
Y
Card 1/~ ~a_ a-e j. Z arj f,)r art?.

ibrational Spoctr~i of 11 - of
in Fig 3. The uf the linoi ri-,Tez tlio
Tho forbiddc-,u line- ura Viinvin The
Give tile typo Of ayovii~)try Of-' tll,-~ 10ril!aL I
carried uut ial(mlations oa-ly for kho v-tlt~nf,.) f,-3rr;,j.,1.. -Li-
ral-loa 400-1200 ;m-1. FIGs 1-3 zyhow the resultu
of calc-,~lutionu with different -.ralue* of (1--isiaiastl:
-I, -a
ill &G exparL~,Iental rotiults Fi- 'I th
t.; u
erlassea of metusilicat,3 anw! bisiMcate all,
0
quartL., obtu ined experWentially (Fig 4b) , au" i F! i7.L %.-t :trl
of polyerystalE consi.Gting- of chains.. lwiinue :)L
thaoretically usinv the 5th vuriant (tha 5th row in
Q
are --ivzn.
I
It is S,;~an that -Cho thaoratical and e;rror!L,.enta1 -;31'- aJ
it is possible to interpret the experlc,,,outal rasult~ :j,
Gard 2/2 given in this paper. There ara 4 flg;-.95 anus 115
are Soviet, 1. German 1 Auier.L-an
ASjOCIAMON I r,,,3 titvt f-i ~, Va i i Li: It orliat!"r-L XT. izs B u1c -
(Instit,tti Cf d-A C f
citxlcjs of Byoloru!;~i Wn .; .3 A B., I v
SU M. 1 TT ED July 2G, 19-! 1. 3ilierto ex-ystal-Vibrations 2. Silicat-s crysla7js -
SpectrographL-, a3ur.2.Y34_!--;

ACOESSIO~_.Mt AA501.2227 U1VO058/65/000/003/D013/D014
SOURCE: Ref. zh. Fizika, Abe. 3Z86
AUTHOR: ~rima,_A.
TITLE: possible application of iteration methods and "relaxation"
1
-methods for-the oaloulation of the constanta of the potential energy
of-, translation
CITED SOURCE: Tr. Komis, po spektroskopii. AN SSSR, vyp. 1. 1964,
99-105
-TOPIC TAGS: potential energy constanto molecular,eptential energy,
potential energy matrix, Iteration methol_.re ation method
TRANSLATION: A scheme Is proposed for the c&lculation of the diagonal
toleaeats of the matrix of the potential-energy constants on the basis
of an Iteratioii mothodl and also a scheme for the calaulation of the
!diagonal and nondiagonal elements of this matrix on the basla of the
f
~relaxation method, ustag the squares of the vibration frequencies of
i
kcqrd 1/2

L L-6299-65
NR., AR5012227
the a'tolecule.land Its hatero-oubstitutes. An estimate of the advan-
-Itage of each of these procedures in praotl6al applioations is pre-
sented.
EMOL: 00

iL 49769-65 Ern(m) in
.-AACC&SION NR: AM012250 UH/0058/65/0W/O03/D032/D032
Abs. 3D231
ISOURCE0. Ref zh 12-
~AUTHORS: MM_Mhov~ Be LL; Marup
Ms.-" 4#nn m _N. _V. ajm~. 14.
__ATITLE: Features ~f infrared spectra of hydrocarbons
C -348
ITED SOURCE. Tr.~Kcmis po spektroskopli. AN SSSR, vyp. Is 1964, 337
JTOPIC TAGS: Infrared spectrum', hydrocarbon, saccharide,, cellulose'
TMISLATION: Th spectra, of a large number of bydrocarbons,-name4 mono-# di-p and
polysaccharides Wnd their substitutes, are compaxed. It is shown that changes In
the structure bi~ve a strong effect an the infrared spectra of this class of can-
pounds. The interpretation of a series of fundamental frequencies is made more pre-
cise. It is concluded that account must be taken of the confirmational factors in
the analysis of infrared spectra of hydrocarbons. Considerable attention is paid
to an investigation of the spectra of the most Important natural high polymer
cellulose In different structural modifications.
SUB CODE:
EML 00

ivIll
Ip .
v -Ail - f
IQ 60
fit
J 1,

- - PR A.M.
Vibrational srectra of silicates. Part 3: &ouations for the
vibrutions of plane silicon-oxvgen rings of silicates. OP *, . i
spektr. 9 no.4:452-459 0 160. (MIR-, 13:11)
(Silicates) (Chemical bonds)

ACC NRt AP6020965 SOURCE CODE: - UR/0226/66/000/006/007710087
AUTHOR: Yeremenko, V. N. ; Buyanov, Yu. 1. ; Prima, S. B.
ORG: Institute for Problems in thf- Science of Materials, AN UkrSSR (Institut
problem materialovedeniya AN USSR)
TITLE: Structure of a_phase_qj~!~~f a titanitj -ag=r system
i% 7? 7 7
SOURCE: Porolihkovaya metallurgiya, TIO. 6, 1966, 77-87
ti I
TOPIC TAGS: itaniurn o-ft phase diagram, 4aU=ad=n%S;5tr4re analysis
ABSVRACT: Phase diagrams of a titanium-copper system have been studied by
metallographic, x-ray and microdurometric analyses at concentrations of 20 to
100 at lo Cu. The results obtained and the data in the literature have enabled the
authors to constz-uct a phase diagram of the Ti-Cu system. The system has six
metalloides, of which Ti2 Cu, T--'- Cu, and Ti Cu4 form phases of variable composi-
tion with narrow regions of homogeneity. Orig. art. has: 3 tables and 2 figures.
[Based on authors' abstract] [AM]
SUB CODE: Il/ SUBM :j1iTE- 19Mar66/ ORIG REF: 002/ OTH REF: 014/
Cord -1/1- 111

ACC NR. AP7009071 SOURCE CODE: UR/01113/6,(/000/003/00'i,[/oo47
-INVENTOR: Furman, N - I.; Shcherban A. N. ; Grishko, V. G. ; Pr~lm,64, A.-_Y~j,
,;Belogolovin, N. S.; Chopovskiy, Yu. I.
6G: None
JTITLE- A frequency meter for telemetry. Class 21, No. 190968
:SOURCE: Izobreteniya, promyshlennyye obraztsy, tovarnyye znaki, no. 3, 1967, 47
'TOPIC TAGS: telemetry, frequency meter, magnetic amplifier, positive feedback,
I
jelectronic feedback
ABSTRACT: This Author's Certificate introduces: 1. A frequency meter for telemetr-(. 1
IThe unit is based on the mutual effect of two magnetic fluxes in a magamp: the variable
Iflux produced by a sinusoidal AC input signal and a constant flux produced by current
'from an independent power supply with bridge rectifiers. To increase accuracy and make'
provision for monitoring the operation of the transmission channel, the installation
contains a square pulse buffer generator with a natural frequency below the "zero"
~frequency of the signals being transmitted. The generator input is conrected to the
transmission channel through a synchronizing stage, while the output is connected to
the AC winding of the magamp. 2. A modification of this frequency meter with automatic
temperature compensation. One end of each of the two circuits of the external positive'
I
feedback windings in the magnetic amplifier is connected to the negative output of the
ibridge rectifiers for left and right cycles respectively tied into the AC circuit of
1/2 um 621.317.761:621-398

1 ACC NR: AP7009071
I I
ithe signal: to be measured. The other ends of the feedback windings are connected to
,the positive output of the bridge rectifiers for right and left cycles respectively,
and interconnected through a resistor. The fee4back vindings for right and left cy-
Icles are connected in opposition.
1--magnetic amplifier; 2-square pulse generator
CODE: 091 SUBM DATE: 22Ju164

SHCHERBAN1 . A.11., akademik; FURMAN, N.L., kand.takhn.nauk; !~~ A.V.
BEIDGOILVIN, N.S.; TARASEVICY, V.N.
High-stability transmission device of a frequency system for
tPlemetering weak pickup signals. Avtom. i prib. no. 1:47-50
'ra4ir 164. (MIRA 17-5)
,J

PRIVACHEK, N.V.
Standardizing and grading coal. Ugol' 33 no.9:42-43 S '58.
()a RA 12: 1)
1.Yuzhinskoksugoll (Coal--Grading) (Coal-Standardo)

'PRI14ACHRNKOL NfIR. , !, : ~. .
,~.
Problem of intrn4errnal reactions in dysentery. Zhur. mikrobiol. epid.
i imuz. 29 no. 12:15-21 D f58. (MIRA 12: 1)
1. Iz kliniki infektsionnyl-h bolezney Kubnnskogo meditsinskogo instituta.
(DYS3KTBRY, BACILIARY, 4-rMinology,
intradermal reactions as irmminol. index (Rue))
"'d

20401-f6 EWPW 1JP(c) JD
ACC HR,. AP5024755 SOURCE CODEs CE/0030/65/011/002/0711/0718
AUTHOR: Primachenko, V. E.; Snitko, 0. V.; Milenin, V. V.
ORGI Institute of Semiconductors, Academy of Sciences UkrSbli, Kiev
TITLE: Nonequilibrium field effect on Si in the region of high de-
pletion
SOURCE: Physica status solidi, v. 11, no. 2, 1965, 711-718
TOPIC TAGS: silicon semiconddctor, electric conductivity, semicon-
ductor band structure, nonequilibrium
.ABSTRACT., The features of the non-equilibrium field effect are in-
vestiRated for silicon in the region of high majority carrier de-
pletion and non-equilibrium between the energy bands. The observed
effects are a strong asymmetry of the amplitude dependence of con-
ductivity with respect to the sign of the external field, a current-
pinch effect, and a strong dependence of the kinetics of field effect
Card 1/2

L 2o4ol-66
ACC NRi AP5024755
on field strength. temperature, and light intensity. A mechanism is
proposed for the non-equilibrium field effect in the depletion region
which involves a strong retardation of screening by surface states at
low temperatures and thus allows penetration of the field into the
avolume of the crystal. The experimental data agree quantitatively
with the calculation. orig. art. has% 4 formulas, 10 figures. [Based
.on author's abstract]
Sun COOE: 20909/ SUBM DATE: 16Jul65/ SOV REP: 003/ OTH REP; 003/

PRIMACHENKO, V,Ye.; ENTTKO, O.V.,; MATSA-9, Ye.F.
study of gold alloyed natural surfan* of ger-mhnlurn. Radiotekh.
i elektron., 10 no.9:1733-1735 S 165. (MIRA 18:9)

L L266-.66- -TJP(a) - JD/AT
:ACC NR: AY5022445' SOURCE CODE: UR[0109/65/010/009/1733/1735
:AUTHCR: Primachenko V Ye.; Snitko, 0. V.; Matsas. Ye. P.
/M
4q/%
ORG: none
TITLE: Investigation of the gold-doped physical surface of germanium
:SOURCE: Radiotekhnika ielektronika, v. 10, no. 9, 1965, 1733-1735
,TOPIC TAGS: germanium semiconductor, semiconductor research
,ABSTRACT: The results of an experimental investigation of n-Ge specimens (45 ohms-am,
~volume lifetime, Itisec) etchant-doped with Au are reported. Fast-state charge vs.
rsurface potential and surface recombination rate vs. surface potential curves
:are shown. It is found that the Au-doping produces a second recombination level
located above the Ej (~2 = 46kT) with capture cross-sections of Cn2 = 10-16 =2,
:CP2 3 x 10-13 GM2 (acceptor level). The Au-doping also creates a set of fast
states located higher and lower than the center of the forbidden
:band Ej as compared to Ej and E2.'The authors wish to thank N. A. Petrova for her
':help in doping the spec~nens." Orig. art. has: 2 figures.
UDC: 539.293-011-7:535.215-12:546.289
Cod)/V_1 SUB CODEt EC/ 51113111 DATE. 23Nov64/ ORIG REF; 003/ OVI REF: 003

PRIMACIIENKO, V.Yt~. (PryinaefiHnko, V.1E.1; SNITKO, G.V.; HILI-INHI, V.-i.
Noneouilibrium effect of the depletion of silicon of -J-.s majority
current carriers. U~x. fiz. zhur. 10 no.4:392-3FE An '6,5-
(MIRA ),'J: 5)
1. Institut poluprovodnikov AN UkrSSR, Kiyev.

L 4444--65 EWT(I)/E;IT(m)/T-/r-,WP(t)/Et-P(b)/LVA(h) Pz-6/Peb 1JP(c)
-JD/A2
ACCM10 ZM: A125o.11065 UR/03.85/65/010/Wk/0389/039T'
AUTHORt Prymchenko,, V. Ye. Onitkal. 0. V.; Milenial V. Yo
t Concerning the mechanim of the non-equJ-Mrium effect of depletion of
maJority carriers 11rom silicon
SOURCE$ Uwayins'lUy flzychM zh=mal, v. jo, no. 49 19659 389-397 -3!
1-MPIC TAJM tfield effect, noneqmIlibrUm effeatj silicon,, carrier depletion, cor.-.
ductivity modulatUou
AWTVACT: Thim-in a theoreticel explawtiou of the fteld effett In non-ew-11ibritm
depletionx proponed in the preceding paper in the aame co-urce (Accession ir.
-io64). he change ~-2u the space cltMer
oi the electric field, tNe canductivIty,
5
Md. capacitance of the semicandwtojAre amiculated as fun-ations of the psftc-atial
drop atross the semiconductor In the non-c-quillbrium made. It is r1cmi that the
calaul~tcd value afthe depth of renetration of the field at the UW;lmit of thc,
blackbw Of, the C=ren4 coincides with the thicknead of the silicar. plate, wh1la
tho ckleulate& val-me, oT the moUility of the field effeetp with mcco-cmt of tbe
ehan&e in the capacitmice caimides in the case of 1=ge fields with the Grift
Car

TISHMINKO, I.T., PRIMAK, T).(-.
BpidemiolngicAl aii-,nificance of non-hospitalized senrlet fever
pntients And secondnry complicAtions. Zhur.mikrobiol.opid. t Immun.
29 no.6i6()-63 je 5r-; 'WRA 11:7)
1. 1z Kiyevskoy gorodskoy sanitarno-epidemlologicheskoy stantaii.
(SCARIONT F-,:,VFR.
epid,rJol. aspectn A compl. in non-hospitalized
patients (Rum))

PRIMACHM N.V.
"Technical control in ore-dressing plants" b7 A.G. Raikhtsaum.
Reviewed by, N.V. Primachek. Ugoll 32 no.9:47-48 S '57. (MIRA 10:10)
l.Upravleniye Yuzhinskoksuroll.
(Ore dressing) (Raikhtsaum, A.G.)

*1' : . '. " - ~ - -- , , r
t "' ' -- * - ` - -;) -1
... - . I I , . . - . I F , .. . . _-~ . Z~ -, - r ,
Hemp
Hemp -ro,,rers of the NovF(jrodl-S7ew!r,!'- -qe.-'c)n., 53v. n.-ron., !0, 2,
- r. ,-L
9. Monthl List of Russian Accessions, Library of Congress, 1'-;Iay Ullcl.

H-DiLCHDRO, N. B.
"Clinico-im,ur.olo&-Lcal indices in various fo=.s of bacillar-y dysentery-."
report submitted at the 13th All-Union Congress of Hygienists, Epidemiologists
and Infectionists, 1959.

PRIMC 9 N*B*, aspirant
I -
Probles of the reflex factor in the aschanina of the intradernal
reaction in dysentery. Shur. m1krobiol., epidm. i im=m. 27 no,3:
27-30 Mr' 56. (KLHA 9:7)
1. Is kliniki infektsionmykh bolezney Kubanskogo asditsinskogo
institute.
I , B&CILLART. imwmwlogy,
reflex mechanism of intradermal reactions (Has))

BELUKHA, P.G.; SHAKHNOVICH, I.G.; PRIMACHENKO, V.V.
Firing of Vla;~imir kaolin In rotary kilns. Ogm-upory 29 no.4:
148-151 '64. (MIPA l7z4)'
1. Veliko-Anadollskiy shamotnyy zavod.

S1185 60/005/003/006/020
26591 D274YD303
,tkUTHORS: _j!UTachenkq, V. Ye. , Lytovchenko, V.G., Lyasherdco,
V. I . and Sni_tk_o,___0 . V.
TITLE: The study of fast and slow electron states on a
germanium surface
PERIODICAL: Ukrayins'kyy fizychnyy zhurnal, v. 5, no. 3, 1960,
345-356
TEXT: The effect of an external electric field is studied on the
dark conductivity (the field effect) and on the surface recombina-
tion of thin germanium plates in vacuo. The field effect was inves-
tigated at a d.c. voltage, as well as by applying rectangular pulses;
this made it possible to determine seDarately the parameters of the
fast and slow surface states. The method of investigation used is
more advantageous than earlier methods; in particular, it permits
studying all the surface states on a single specimen. 'llie sizze of
the specimens was approximately 1.5 x 0.5 x 0.015 cm. The specimens
C ard 1A

26591 Lj/ 185/60/0 05/003/00 6/0 20
Tiie study of fast and slow electron... D274/D303
were treated with CP_4 and, after measurements, witli boilin(f H202-
The germanium plates were p-type with specific resistatice 40 - 50
ohm. The specimen served as one plate of a capacitor to which a
d.c. voltage of 2500 v was applied as viell as an a.c. voltage (rec-
Langular pulses). The dark conductivity a- was ipeasured by a com-
pensation method. The change in conductivity A(r (following the
application oE the rectangular pulses), was measured by a special
circuit. The rate of surface recombination was determined by the
effective relaxation time 'r of the photoconductivity, following
the illumination of the middle part of the specimen by the rectangu-
lar pulses of light. The relaxation of the photocurrent followed an
exponential law. A diagram is given of the circuit used for the in-
vc1stigation. Curves are given for 2~a- as a function of the charge
Q induced on the germanium surface. The presence of a minimum on
the experimental curve Acr(Q) permitted determining-the surface
potential Y for each Q. The total surface potential reaclies 15 kT/e
-:~ 0.38 eV., i.e. it is ap!)roximately equal to half the width of
the forbidden germanium zone. Further, the field effect makes it
Card 2/5

26591 S/185/60/005/003/006/020
The study of fast and slow electron... D274/D303
possible to determine the charge Q. in both fast and slow states,
(Qs = Q - Q01 where 90 is the space charge). Yhe surface charge in
fast states changes relatively little for small Y, whereas for large
Y it changes rather sharply. The deDendence of Qs on Y leads; to the
Interpretation of the energy levels Zdiscrete vs. coiLtinuoiis). The
authors assume discrete interior levels; this assumption is support-
ed by the results of recombination measurements and is also in agree-
ment with A. Many's results (Ref. 21: J. Phys. Chem. Solids. 8, 87,
1959). Therefore, the results obtained from the field effect for
the fast states are interpreted by the authors by means of a model
of four discrete levels, whose parameters are given in a table; for
the slow states, two discrete levels are assumed. The charge of
the slow states is much greater than that of the fast states. Hence
the constant
the slow states are of basic importance in screeninb
external field. Furtherthe dependence of the rate of surface re-
combination s on the surface potential Y is plotted and discussed.
The fast levels are responsible for the recombination; two or even
three such levels can substantially contribute to it; but, in gen-
Card 3/5

26591 S/185/60/005/003/1006/020
The study of fast and slow electron... U274/D303
eral, one of the fast levels is predominant in surface recombination.
The values of the capture cross-sections of electrons and holes are
given in the table. The measured values of the parameters of the
surface levels depend on the etching method (by means of CP-4 or by
11 202) and on whether the surfaces were freshly etched or a long
time ago (their previous history); thereby the difference in the
parameters is, however, not as considerable as should have been ex-
pected; the concentration of the fast states, and especially their
recombination capacities show considerable dependence on the pre-
vious history of the specimens. Finally, the presence of an oxide
layer on the germanium surface is considered as definitely estab-
lished; this layer has a complex chemical and polycrystalline struc-
ture. The layer is the main reason for the complex system of sur-
face states of germanium. The slow states are found on the outer
surface of the oxide, being mainly determined by adsorbed atoms,
whereas the fast states are on the interface Ge-oxide, bein- mainly
due to imperfections of structure and extraneous atoms. There are
5 figures, 1 table and 36 references: 14 Soviet-bloc nnd 22 non-Sov-
Card 4/5

26591 S/185/60/005/003/006/020
The study of fast and slow electron... D274/D303
iet-bloc. The 4 most recent references to English-language publica-
tions read as follows: E. Harnik. G. Margoninski, Phys. a.Chem.
3olids, 8, 96, 1959; A. Many, J. Phys. Chem. Solids, 8, 87, 1959;
it.E. Schlier, H.E. Farnsworth, J. Chem. Phys., 30, 917, 1959; G.A.
Barnes, P.C. Banbury, J. Phys. Chem. Solids, 8, 111, 1959.
AS,30CLATION: Instytut fizyky All USSR (Physics Institute, uS Ukr
SSR)
SUBMITI'ED: November 5, 1959
G ard 515

'D- 17" t/7 i b I I rp,
14-CESSIONS IRS AP5004321 8/0185/0/010/001/0039/0046
MMORt. Prymachedkop V. Ye. (Pripachanko V. Ye); Milenin, V*V#: Snitko, O.V.
TITLE: Investigation of.gold-doped silicon surface
SWRC91' Ukrayinfl1w fizychw zhurnal V* lop no- Is 1965o 39-J46
TOPIC MG8. ailicono surface -state, -dapingp surface recombinationp rec=bination
------ - ------ --------
AMTRACT! Tho method;of- iiingle - high-voltage pulses was used to investigate the
field effect of 20 p-type silicon sample., etched and doped with gold frcm the
etching substance. The sw-Tlea had an appraxim-ate resistivitY 3500 ohm-cm and. a
rzon-equilibritm- volumn, cewrier lifetime 700 microseconda. The orientation of the
lirfe4;tigated surface was (11-1). The method of etching and electrode deponiti-)n
ia described. Meazu-__ent:i were made of the condut~tivity, photaccaducti-rity, and
capacitive photo-mf as ftinctions of the external electrical field applied to the
sample surface througb a mice, plate. The experimental set-up for measuring-L the
field affect is shmm in Fig. 1 of the Enclosure. 12LIbe, photoconductivity and
Card 1/4 - --- --

F- L31 OL-7-65
ACCWSION IiRt AP%c4321
capacitive photomf were measured by applylug rectangular pulses of white light
vith fronts up to 5 x 10-7 sen., produced by a rotating mirror. Details of the
semple preparevion and of the experimental procedure were described by one of
the authors els"rhere (Snitko., with G. V. Litoveheaka, FN v. 2, 591 and 815,
lc,360). The meezurements were made at 20C, with the temperature maintained con-
stant with an ultratherTaostat. By comparing the experimental re6ulto %.Ith the
theory, the authors deterainad the parnmeters of the surface stattes on doped end
undoped surfacer.. The presence of I x jo-6 -- 1. x 10-4 of gold ia the etchant
gives rise to an additional syatar. of fast ourface atates, and also influenceu
the parameters of the slow states. The =at effective recc=bination level pro-
duced by the gold on the silicon surface lies 0.222 V below the center of the
forbidden band. This level is of the donor type (Cn rm 6 x 10-2.5 .2, hole con-
centration 1 x 10-22 cm2)g and the concentration of the level depends on the con-
tent of gold in the etchent, lying in the range (0#8 -- 4) x lo12 cm-3. To obteln
smmll surface-rectmbination rates in silicon it is aecessary to ezmloy extremely
pure rewents and to treat the surface in a way that precludes the introduction
of harmful impurities. "The authors thank N. A. Petrov for help with etching
the samples." Orig. art. hast 6 figures.
Card 2/4

-F' -_- X RCI W
L 3
AVS004321 MCIMURE. 01
7
COT
9
6 P-300
Fig. 1. Circuit fcr treastring the field e f f ect.
1 - Sil-ican smple, 2 electrode, 3 - mica, 4 square-wave gene-ratcr,
5 - high-voltage pul%-- scurce, 6 relay for hv pilses, 7 - 0--cillcgrap'n
coupling circuit, 8 circuit for rmasurem-nt of the C~nductivity chanw
9 - galvanc-n-Ler
4/4
Mm P M ~112
S!, M Ma, 4

S/181/62/004/010/045/00'3
B102/B112
AUTHORS: Primachenko, V. Ye., Litovchenko, V. G., Lyashenko, V. I.,
an-d--Sn'it'k6-, 0. V.
TITLE: Minor\ty carrier adhesion on.the silic~bn surface
PERIODICAL: Fizika tverdogo tel4, v. 4, no. 16, 1962, 2925-2930
TEXT: This paper is aimed to show that under certain conditions a
charge accumulation may occur on the silicon surface and that the
bipolarity (6n - 8p) may be disturbed. This is, however, contradictory
to the observations made by other authors (see e.g. Phys.Rev.101, 1272,
1956; Semic.Surf.Phys.,85,1957). The disturbance of bipolarity of the
intrinsic photoconductivity observed is attributed to minority carriers
accumulating on fast surface leVels. The same method of investigation
was used as described in orevioun papers (FTT 1,980,1959; FTT 2, 591P
1960; UFZh,5,345,1960). The specimens were n-type Si single crystal
platelets 200-4004 thick with resistivitiee of 30 - 200 ohm-cm and volume
lifetimes of - 1000psec, the surfaces of which had been etched with CP-8.
In germanium the bipolarity,of the surface photocurrent may be disturbed
Card 1/3

S/1 81/62/004/010/045/065
Minority carrier adhesion on
only at low temperatures, but in etched silicon it may be disturbed even
at room temperature. This is proved (1) by the nature of the photo-
conductivity relaxation of thin samples if the oscillogram shozs tso
exponents with widely differing time constants; (2) by the constant T sh
of the short-term photocurrent component being inversely proportional
to the electric field applied whereas the constant of the long-term.
component is independent of 'it; (3) by the fact that the long-term
component can be caused to vanish by the usual method of trap filling;
(4) by the long-term component increasing as the temperature decreases,
while the short-term component decreases and almost vanishes completel~r,
this being related to the intensified charge accumulation; in both cases
ln,r = f(l/T) follows a linear course; (5) by the results obtained in a
study of the kinetics of the field effect also indicating a disturbance
of bipolarity. This bipolarity is also indicated by the field dependenc3
of -r and r and (7) it is particularly pronounced in samples kept on
sh 1
air for a longer period of time after they had been etched. (8) Experiments
on the condenser photo-emf proved that the disturbance of the photocurrent
bipolarity of Si is related to a change in the surface charge. Such a
Card 2/3

B/181/62/004/010/045/063
Minority carrier adhesion on B102/B112
Cn Etv- linc
disturbance occurs when Pexp(-Etv/kT),< 1
exp -kT 1 and -rcNj
CP
where CP and Cn are the electron and hole trapping cross sections, E tv
the energy of the levels relative to the valence band, A nc the electron
Fermi quaeilevel relative to tha c.onduction band, Tc the recombinative
lifetime and N the effective number of levels in the valence band.
v
There are 3 figures.
ASSOCIATION: Institut poluprovodnikov AN USSR, Kiyev (Institute of
Semiconductors AS UkrSSR, Kiyev)
SUBIJITTED: February 6, 1962 (initially) June 129 1962 (after revision).
Card 3/3

--- PRIW-.CHENLKQ-,-~~-SIJTKO, O.V.
Role of a dielectric in -Lhe investigation of the field effect in
semiconductors. Fiz. tver. tela 3 no.1:15-18 ja 161.
(MIRA? 14:3)
1. Institut fiziki All USSR, Kiyev.
(Semiconductors) (Dielectrics)

89270
S/181/61/003/0.)1/002/042
f,dl3oo (14#13., 11113j ltrr) B102/B212
AUTHORS: Primachenko, V. Ye. and Snitko, 0. V.
TITLE: The role of a dielectric in investigations of the field
effect in semiconductors
PERIODICALi Fizika tverdogo tola, v. 3, no. 1, 1961, 15-18
TEXT: One of the most important methods used to study the surface
properties of semiconductors is the method of the field effect (change of
the surface conductivity under the influence of an external electric fields
here I the semiconductor is a capacitor plate which is covered with a di-
electric (mica, strontium titanate) to increase the breakdown voltage.
Therefore it is of interest to know the effect of the dielectric on the
surface properties of the semiconductor; several studies made for this
purpose (among others, by Shao and Morrison) are briefly discussed in the
introduction. In the following, the authors report on their own experi-
ments. First, they repeated the experiments of Shao and found that a
considerable charge remains on the mica after the electrode has been
removed unter voltage. Then,experiments have been undertaken to measure
Card 115

89270
S
S/1 81/61 /CD 3P01 1002104 2
The role of a dielectric in... B102/B212
the field effect and the capacitor photo-e.m.f. directly, with and without
mica, in a vacuum and in air. These experiments were made with n- and
p-type Ge and n-type Si. As the results obtained were similar, only those
concerning the n-type Ge (y - 28 ohm-cm, thickness 340 /L) are discussed.
Fig. 1 shows the change of the conductivity AV and the capacitor
photo-e.m.f. V, , measured for 15 seconds after a constant field had been
applied, as a function of the capacitor charge (Q-CV); C with mica has
25 p+tF, without mica, 10.5 PPF. Fig. 2 illustrates the long-period
relaxation effect of the field for various cases. It is demonstrated
again that curves recorded with and without mica coincide in dry air and
in a vacuum, while those recorded in humid air deviate considerably from
each other. Relaxation is more rapid wit mica. All experiments showed
consistently that in fields up to 1- 2-10~ v/cm, no charges are transferred
from the semiconductor to the dielectric in dry air and in vacuo. Results
obtained for humid air are indicative of a partial charge transfer to mica,
which increases with humidity; this is related to the surface conductivity
of mica in humid air. There are 2 figures and 9 references: 6 Soviet-bloc
and 3 non-Soviet-bloc.
Card 2/5

89270
S/181/61/003/001/1"-',2/012
The role of a dielectric in... B102/3212
ASSOCIATION: Institut fi .ziki AN USSR Kiyev (Institute of Physics of the
AS UkrSSR, Kiyev)
SUBMITTEM: April 30,- 1960
Legend to Fi-. 2:
Field effect relax*a- 410
tion for d capacitor'
charge of
2
4.2-10 coul/cm
(t > 5 min).
I - vacuum; II d 7 6 9 49
ry
air; III, IV - humid 2 3
air; 0 with mica;
o with out mica.
F1
Card.

89270
S/18 61/003/001/002/042
XB
The,'role of a-dielectric in... B102 212
Legend to Fig. 1: AG' and as' functions of Q; V,,~ given in relative units,
V4)
2
8VI in ohm and Q in coul/cm Upper diagram: I, II - vacuum, III,
IV - dry air; lower diagram: with mica; x without mica.
Y,,omwed daww

71,e role of a dielectric in...
Card 515
S/181/61/003/001/C,12/0L,2
.B102/3212
Ida
.A
to

VJEJ; SNITKO, O.Y.
Iffect of an external electric field on condenser photo-e.m.f.
in germanium and silicon. Ukr. fiz. zhar. 5 ao.4;488-503 Jl-
Ag 16o. (MIRA 13:11)
I.' Institut fiziki AN USSR.
(Germanium--Blectric properties) Motoelectricity)
(Silicon--glectric properties)

N

4/ '7 P

-'ry-maciienko,
. V. Yo -and Snit'-o, U V
. ...............
TIT1-,'- Lf feet of the
external
electric
fielcl o7,. ca-,)ac--11--or
photo-cmf i.n r,ormanimi and silic on
PEitIODIC.U.: Ukravins'kvy fiZYC11T1VV z1hurriat, -,,. b. LK). "I , 1.960
488-~02
C 1'. All VXDQI'h~m-rital. st:mly is dc.,;cribed .-fiti.ch i-ad the -;urpose
of asccrLaini.iij; ffic cffccL of .111 electric, 1-ield olk th'.
ca-,)acitor DhOtO-eMf )-n germanium and silicon, and Lo vcri-fy Ltit, V~
dependence of this emf on the surface buckling (flexure) of zones
and on the surface states, as predicted by theory, In addition,
the 1kinetics of the i)hoto-emf was investigated. Reasons are givc-n
for th,~ failure to o~servc the offect of tiie external field on the
photo-ei:if - In the present investigition, the necessary steps were
take-Li to avoid such a f ailure Thus, C'g. the elzctric
stroug-th in tho c;--pacitor wa- to 1.5-L0 v/cm Under -,'1w

27A!
Effect of the externaL ClICICLric.. 0274/D306
conditiotts of the experiment , a stronz- effect was O;Jservc(,' trie
eNternal field on the photo emf in all the investigaLed s-pec-mcns
(nearly 20), Partial results of the invostigation were ptib--IiE~hed
in earlier works. Lxperimmital uiethod- Thin plates oC g,ermanium
and silicon single crystals were investigated. To one side of the
plate, c1ccLrodes and probes ..ierc applied, for o".' elark
auc~ -.-)hotoconductivi-ty, whereas a mica pl~.-,'Lc -~.ias ipplied to t~ic oL,11-
er s- of the soecimc The co-pacitance Q of the capac"Lor I`vus
fenmed, was measure(~, it tmmieCi out to be mu-ch Les- than tae c,;'- -
culated one, Tho spccLmens --,ere MunlinaLed L)v rectawruli-i-ir puLscs
Thc c~,,T)acltor phot.o-cmf uic,.isured i)y mc;,115 0" tile Usual circuf;
(as g -.,,s -lie tin,,, o'
,iven in references) fi-fure silo
the photo-emf V oil SwItetLing n im(I
0
The -
(A .- ri"-'Icrits -,;ero co-l"Ciuctcd
fiel C-~)R
.1 imporL.,xit feature oj' the rdepc- "("u C
in c va-cuum Zhe ( ost
1 4 -- i 0 L (.1 U,
on the externa is the existence Of two liln-'til!"~ V-111C.,; 01
v betv.,cell which V,) changes -Lu a nurrow inuclrval r,,"'
P, CD
U ~is a rule, Iboi-h' the t,,t.,rmallium and siLicon Specimens show a

27 9),
S/185/60/005/604/007/021-
Effect of the external electric- D274/D306
shift of the dependence V P (U) towards positive values of Vp in the
case of n-type crystals, and towards neg i.11 Lite
_,~itivc valuQs of V
case of p-type crystals. Simultaneously, the effect of & CXter-
nal field op. the dark conductivity was measured. The change in sur-
face conductivity AO, is a result of a change in electron- and hole
concentration in the space-charge layer. Thereby the conductivity
passes (depending on zone buckling) through a minimum ...rhen the re.-
duction in majority carriers is compensated by an increase in min-
ority carriers, It is noted that the correlation between the mini-
mum ot Ao, and the region of sharp chang V
,e of is so strong, that
the slightest change in the method of surface ?reatment which
shifts the minimum of Ao-(U) along the U-axis, leads at one to a
corresponding shift of the curve V P(U). This shows the importance
of surface zone buckling for the generation of the photo-em-'.
Measurements of dark conductivity and the minimum of the curve
(U) make it possible to determine for each value of U the surface
potential Y which corresponds to surface zone buckling. ~'or tiiLt
purpose the theoretical curve Aa-(Y) was calculated for each succi-
C ard 3/ 8

?TA8 S/185/60/005/004/007/0 21
Effect of' the e%ternal electric.-, D274/D306
men. By comparing it with the experimental curve AC'(U), it was
possible to determine the dependence between U and Y, Fur t1he r ,
the kinetics of the capacitor photo-erif i..Yas investigated. 11 ,his is
important in connection with E.O,. Johnson's metiiod oj-* detern.[nin;e
the lifetime of minority carriers; by meaus of the relaxation ti,""C
of the photo-emf (Ref. 28n j. i?hys., 28, 1349, L9b7). .,here.
as the author. obtained, in the a0sence of an external flicLd, a time
constant which agreed with the results of L~ef. 28 (Op. cit), he Was
unable to investigate the ;e1axation time of the photo em-` in thc
presence of an external field; this was due to thc small ml~jf)n tt-:C:c
of the Dhoto-emf (hundreds of microvolts) and to backi",rou-ii(" off-ects.
It was established that the majority of silicon specimeits has a
nearly-exponential relaxation of the photo- emf aith tii.,Ie cons trait
ep of the order of tens of microseconds. Some of the silicon
specimens showed a sharp non-exponeritiaL relaxation of the photo-
emf~ The surface photo-emf Vs was apTroximately coiriputed by sever
al authors, the best of these computations being E,O. Johnson's
(Ref. 12; Phys. Rev. . 11L, 153, 1958), this computation was done
Card 4/8

2790
S/185/60/005/001,,/007/021
Effect of the external electric... D274/D306
for a single surface state only. As the gemanium and ,-.ilicon
surfaces have 4 fast stites, it is of i-aterest to generalize John-
son's formula for any number of states. Vs is determined froi.i
Vs ItT A y ;z:~ X1 . dY Ap, (2)
p e e dap
where An the relative increase in hole-conccntratior, during
illumiiia~tion of the specimen. after some trans f onuations one ob
tai-is ), -Y
4ke +e -2)
d),
d~.p
where
+1 T,>`>1,
- V npll Tj < (12)
F Y -
(Y- In X+-j)
I e
Card 5/8

27948 S/18 60/005/00-'/007/02L
Effect of the external electric... D274YI)306
Formulas (2) and (11) determAric the dependence of the ptioto-ct,.if
V's titi;il and surface states. Ldgurcs ;ire slioTni
on the surface pote
with theoretical and ex-,) critic ut al curves V-(Y). It is noted tlizit
p
the agreement bet~,.,een theory and experiment is good qualitatively
on3y, i-.rhereas quantitatively there are discrepancies; these may
be due to ncglectir~g slow surface state!;, and to errors in deter-
mining the surface potential and surface states. 2urther, ti,.c
droT) is considered in the c~--,pacitor photo-cmE which dcl)cnds on AL'.
for silicon, the time constants 'r p and T are not only of diff-'
crent magnitude 'in the absence o' an external field), but tiicir
dependence on Y is of a different character too. It is likely
that the formation of a D-n junction at the silicon surface hin-
ders the relaxation of the photo-ei-if. The -magnitude of T is
determined by diffusion pro~esscs and surface recombinatio . The
surface conditions (vone bucklinr, and surface states) have a coll-
siderable effect on the photo-omf of silicon ;aid ,,crmaiiium. Tlw
surface potential Y can be determined in princip 1e by comparing
experinental and ',:heorctical values of V p (U) and V p (Y). But such
Card 6/8

~ I
7 NO
S/1.85/60/005/004/0071/021
Zffect of the externaL electric.- D274/D306
a method is inaccurate owing to the difIficulties of tol-ling into
account all the surface states .by m eans of 'Eq. (LI) i _'J'itnout 1".-now-
ing the parameters of the surface states, Y can :)e estimated (to an
accuracy of (2-4) 11-3/c), In principle, it should be possilAc to
determine Y from 't' RjCj (j denotin(r tile 1,)-n jul"ction)'. '; U, c I-L a
method has the adv,-intage o_~-' being independent of the, model O.-L' 31..'r-
face st,-itQs. The aLthors object ot Johnson'5 metiiod Clef. 12-
cit) of determining Y, for two reasons., They also ob.ioct *L-0 tile
method of determining the sign of the photocarriers by me,,.ns of the
capacitor photo-emf, as set forth in a auniber of works. There are
6 figures, I table and 35 rcfercuccs~~ 24 Soviet-bloc rind 1.1 non-
Sovict-bloc. The 4 most recent references to English-language
publications read as follows, ..7. 3rattain, C Garrett, 3CII.
Syst, Techil., J..., 35, 1019, 1956; E,,C;,, Johnson. 11hys, ix'cv,, 111,
153, 1958; E.O. Johnson, J.. Apl)L~ Phyr-,, 23, L349, 1957; -~. Many,
J. Phys. Chem, Solirls, 8. 87, L959.,
Card 7/8

~ 75.14CO, S /18 5/60/00 ~-- 7/ 0 2 1
Effect of the external electric.- D274/L)306
A-S"', X I "'ST I ON:: Instytat fizyky Ai, USSR (I'livsics llisLi-LuLe 6~
SUBI-11TTED; N'ovei-,ibcr 5. 1950
,
j
Card 8/8

PRIMAGHOKP N.V., gornyy Inzh.
Goncerning T.A. Koibash's book "Bampling and control in goal
preparation plants." Ugoll 30 no.6a6l-62 Je 163. (MM l6v8)
1. Ukrainskiy proyektno-konstruktorskiy i nauchno-iseledovatell-
skiy inatitut po obogashchenlyu i briketirovanlyu ugley.
(Coal preparation plants-Equipment and supplies)
0

PRIMACHOK) N,V.; BAYBEKOV, K.A.
Preparation of representative samples. Standartizatefta 29
no.1:57 Ja 165. (WRA 18W

SHCHERBANI 9 A.N. [Shcharbanl, O.N.] (Kiyev)i KAPLAN, R.A. (Kiyev);
FRMA4 A. V. ( Prymak.. A. V. I (Ki)lev)
Transmitting device of a frequency telemetry systej4 of low-
power outpu-1; signals. Avtomatyka 8 no.6342-1+6 16 I;IRA 1718)

SHCHERBAPP A.lN,, akadem'k, FUFVJtN, N.f., kand. tekiin. riauk;
N.S.; PRTM:qK A.V., TARASEVI'-11, V.N.
-.--..-'- -t- -- - - - ~j ~
Transistorized contactless relay device. Avtcm. " pri-it-, no.3,
47-49 Jl,-S 161,. (MIRA 1p-,3 ",
1. Akademiya nauk LPKrSSP. (for Shchermn I ; .

i R-IMAK) tl.v..q , nzin. ; FUR-WN, N, I ., kano, tektm.ntiuk; "-. il., dil)k tor
tolchn.risuk, Prof.
Controlled high-stability IC o-scillatuar with a
Jo
of re2ponoe. Prlboroot!-oenie nn.3-~,X-22 Mr 16Z
(MIRP 1814)

NAGORNYY, Ivan Sergeyevich [Nahornyi, I.S.); PRIMAK, Aleksey
YakovleviagPrymak, O.IA.]; ATIDREYTEVSKIY, V.ya.
- (Zid-riievs I k-
yi, V.IA.1, dots., red.; DOMMOKlY, V.M.,
(Dobrzhanslkyi, V.M.), red.; POTOTSKAYA, L.A.(Pototalka,
L.A.], tekhn. red.
(Udder diseases in cows] Khvoroby vymlia u koriv. Kyiv
Derzhaillhospvydav URSR, 1962. 90 p. (miRA 16:5~
(Udder--Diseases)

DuDYM, A.G.; PRIKAK, A.Ya.; CHEBOTARIOV, R.S.
Application of the products of primar7 brown coal tar in control of the
parasites of farm animals. Visayk Akad. Nauk Ukr. R.S.R. '53. No-2. 56-6o.
(CA 47 no.22:12744 153) (NLRA 6:3)

(7(jurku'ry ;
a t 0 ry : licrobiolnU. Ificrobas PathogmnlC For "an UrYl Aniaqla

7~ o 25, '7o JC58'1~
Au i~ ho r -T!,flichanko 1. T.; Prims'~ D.U.
Institut.
T1t1c ;Tha Problem of the Epidaiiolog..cal Sirnificanes of

Scarlat iPnvar Paii, v
,tAs LIft at Eona and of '4econAar,
complication.-I in r,[-,*m
Ori -h -.ilroblol., epideziol. i. immunobiol., 1,95-3, lio 6,

A~bs t r a c t :No abstract'.
Card:

TISHCHENKO, I.T.; PRIK.AK, D.O.: SHIWMT, A.L.
Results of discharging patients in scarlet fever cases on the 14-15th
day of the disease. Zhur.mikrobiol.epid.i Immun. no.3:29-33 9r 154.
(MLR-A 7:4)
1. Iz Kiyevskoy gorodskoy sanitarno-opidemiologicheakoy stantaii
(glavnyy vrach F.I.Yuvzhanko) i kliniki detskikh in-fektaionnykh
bolezney (zaveduyushchiy - professor A.V.Cherkasov) Kiyevskogo
meditainakago institute. na baze 5-Y Kiyevskoy detskoy infektsiormoy
bollnitsy (glav"y vrach A.L.Shekhet). (Scarlet fever)

DAITIIZYGHEITKO, 0. A.; BELYAKOVA, Ye. M.; KAIWIOVA, T. A.i__PRIMAY, D. 0.
Study of the effectiveness of anti poliocore li ti a vaccination in
the city of Kiev. Mikrobiol. zhur. 24 no.1:10-15 162.
(MIRA 15:7)
1. Kiyevskiy nauchno-issledovatellskiy institut epidemiologii
i mikrobiologii i Kiyevskays, gorodskays. sanitarrio-epidemiolo-
gicheskaya stantsiya.
. ZUMLITIS-PMVENTIVE INOCULATION)
(LUV.4W

TISHCHENKO, I.T.;_T7l_TMAK,-D-Q-.; SILYAVKINA, AX; SOFIYENKO, N.Ya.;
SHEKHET, A.L.; NEVIDNIKH, A.A.
Ways for decreasing and eradicating diphtheria in Kiev. Zhur.
mikrobiol., epid.i i=mn. 32 no.12:106-109 D 161. (MIRA 15:11)
1. Iz Kiyevskoy gorodskoy sanitarno-epidemiologicheskoy stantsii
i 5-y detskoy klinicheskoy infektsionnoy -Dollnitsy.
(KIEV-DIPHTHERIA-PREVENTION)

ACCESSION NR: AP4020319 S/030Z/64/000/001/0047/0050
AUTHOR: Shcherban', A. - N. (Academician); Furman, N. I. (Candidate of
Mmhnical Sciences); Primak, A. V. a' Belogoloyin, N. S.; Tarasevich, V. N.
TITLE: High-stability transmitter for a frequency-type telemeter with a weak-
signal sensor
SOURCE: Avtomatika I priborostroyeniye, no. 1, 1964, 47-60
TOPIC TAGS: telemeter, frequency type telemeter, telemeter sensor, telemeter
weak signal sensor, telemeter transmitter, frequency type telemeter transmitter
ABSTRACT: The development of two versions of a new transmitter: (a) with a
magnetic d-c amplifier and (b) with a semiconductor d-c amplifier, is reported.
The magnetic amplifier was Invented by A. N. Shcherban', R. A. Kaplan, and
A. V. Primak (Author's Certificate no. 153676). A controlled transistorized LC
oscillator is used as a source for supplying a differential magnetic amplifier
which, in turn, controls the oscillator frequency. The sensor frequency may
vary from d-c to 1, 000 cps - Laboratory tests demonstrated the frequency
Card 112

ACCESSION NR: AP4020319
stability at 0-60C ambient temperature and -25%+10% variation in the a
upply
voltage. An IM~3 methane indicator was used as a sensor. However, "the use of;
the transmitting device in mines was hampered by the complexity of the magnetic
amplifier, difficulty In its alignment, large size, and considerable inertia which
caused a frequency-convcroioix collapse on rapidly varying signals. 11 Hence, a
semLiconductor amplifier was developed instead; input impedance, 230 ohms.
load impedance, 60 ohms; input current, 61 microamp; output current, 4 ma;
K a 65; K1. a 1, ZOO. The transmitting device In being adapted for IM-3 and
AMT-2 methane monitors at the "Krasny*y metallist" Electromechanical Plant,
Konotop. Orig. art. has: 4 figures and I formula.
ASSOCIATION: Institut teploenergetiki AN UkrSSR (Institute of Thermal-Power
Engineering, AN UkrSSR)
SUBMITTED:. 00 DATE ACQ: 31Mar64 ENCL: 00
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f : I - . -
PRIMAK, F-Ya., prof., doktor med.nauk
State of the cardiovascular system in wound infections and sepsis.
Medych.zhur. 17:199-215 147. (MIRA 11:1)
1. Z klinichnogo viddilu (zav. - akad. M.D.Strazheako) Institutu
klinichnoi fiziologii AN URBR (direkotor - skad. O.O.Dogomoletal)
(CARDIOVASCUIAR SYSTEM-DISNAUS) (WOUNP-i)

PRIMAK, F.Ya., prof.. doktor med.nauk
Main clinical peculiarities of anergic and hypoergic forms of
wound sepsis. Medych.zhur. 17:216-225 147. (MIRA 11:1)
1. Z viddilu funktatonalinoi terapti (zav. - prof. F.Ye.Primak)
Ukrainslkogo inatitutu klinichnoi meditsini (direktor - akad.
M.D.Strazheako)
(WOUNDS)

PRIKAK, F.Ya., prof.
State of capillary circulation, arterial and venoun p:-,~rsure, bad
oxygen consumption in hypertension. Medych.zhur. 19 no-1:79-89
11~9. (MIRA 10:12)
1. Z klinichnogo viddilu Institutu klinichnoi fiziologii im. akad.
O.O.Bogomolltsys AN URSR (zav. Viddilu - akad. M.D.Strazheako).
(HYPERTENSION) (BLOOD PRICSSURE)

PRIMAK, F.Ya., prof.
Chronic oulmonary insufficiency in hypertension. Medych.zhu--. 21
no.6:14-'Jg '51. (MIRA 1'-,: 1)
1. Z fakulltetskoi terapevtichnot kliniki (zav. klinikoyu - eked.
M.D.Strazhesko) Kyive8kolo medichnogo institutu (direktor - dots.
T.Ya.Kalinichenko)
(HYPERTENSION) (RESPIRATION)

PRIYAK, F.Ya.
Si i~ica~nce of pulmonar.7 and coronary Insufficiency in hypertennion.
Klin.med., Moskva 29 no.2:31-40 Feb 51. (CLUL 20:7)
1. Of the Ukrainian Institute of Clinical Medicine"iDirector-
Academician R.D. Strashesko, Hero of Socialist Labor), Kiev.

AILKSEYBIIKO. r-~P.', doteant, redaktor; SHAMRAY, Ya.Y., professor, reclaktor;
CHAYKA, Ye.I., profesisor, redelctor; MANIKOVSKIY. B.N., professor.
redaktor; CHERKIS, A.I., profeasor, redektor; PRIW, F.Ya., professor,
redaktor; LIUEMNSBTAYN, Ye.L. dotsent, redaIJtO-r--'PROttrM, V.Y.,
dotseat, redaktor; GLUZHAM. F.A.. redaktor; WUIMATYT, Ye.G.,
tekhaicheski.v redaktor
[Patholog7 of the cardiovascular system in clinical treatment and
experiment] Patologila eardachno-soeudistoi sistamy v kliniki i
ekspartmente. Kiev, Goo. mad. izd-vo USSR. 1956. 241 p. (MI2A 10:2)
1. Kiyev. Meditsinoki7 institut Imeni A.A.BogomolOtea. 2. Daystvitall-
nyy chlen Akademii maditainskikh nauk SSSR (for Manlkovskiy) 3.
Chlon-korrespondent Akademii maditainakikh nauk SSSR (for Cherkes)
(CARDIOVASCUIAR BYSTEK--DISRASES)

STRAZHSSKO,, Nikolay Dmitriyevich; AYZMKRG, A.A.. professor, radaktor;
YNVTUKHOVA, M.L., dotsent. redaktor; XAVETSKIY, P.Te.. professor.
redaktor; LIOZINA, Te.M., dotsent, redaktor; KIKHM , I.L.,
professor, OtTOtstvenw redaktor; rRI!!AK, Y.Ta., professor,
redaktorg SAYKOVJ. V.V., doteent. redaktarg CMOTARAV, D.F.,
professor. redaktor; YANOVSKIT, D.N., professor, redaktor;
BNNZHIN, M.I., redaktor Isdatelletva; RAIMLINI,N.P., takhnicheakiy
redaktor.
Lselected works] IsbraWe trudy. Kiev, Izd-ve Akademil nxak
USSR. Vol.l. [Problems In the pathophysiology of the circulation
of the bloo4] Problemy patofisiologil kroToobrashcheniia. 1955. 398 p.
Vol.2. [Problems of sepals, andocarditis, rheumatism, physiology
and pathology of the organs of digestion] Problem& sepsisa. ondokordita,
revmatisma, fisiologila I patologiia. organor pishchovareniia. 1956.
365 D. (KIRA 9:7)
1. Deystvitellnyy chlen AN USSR (for Kffetekly)
(PHTSIOLOGT, PATHOLOGICAL)

/ ~;' , ; !- ,I- ~ .
PRIKAK. Y.Yfle, prof.
nical aspects of vascular sethenia in diseases of the digestive
organs. Vrach.delo no.12-1275-1278 D 157. (MMA 11:2)
1. Kafedra propedevtiki bnutrennikh bolezney (zav. - prof. F-Ya.
Primak) Kiyevskogo meditainskogo instituts.
(DIGNSTIVIi ORGANS-DI.IMASNS)
(BIM VMSSY.15--DISEASES)

E',,---RPTA MEDICA Sec 6 Vol 13/3 Iniernal Yed. "ar 59
1581. ACUTE TOXIC SrlJ()tJS MYCICARDITIMS AND *1111-:111 SIG NIF ICANW K IN
'I*I!F CLINIC OF INTERNAL DISEASES (Russiin text) 11 r i ma 1; F. Y
SOVR. MED. 1958. 22/4 (59-64) Tables 2
The clinical picture of acute toxic serous myocarditis is given and the fact is
stressed that in the majority of cases a discrepancy is found between the patient*S
subjective state and the clinical findings. Generally acute toxic serous myocard-
itis may be present in focal infection (espe6ally when it became more active), in
intoxications, etc. Wound infection with general septic reaction and wound sepsis
may be accompanied by acute toxic serous myocarditis. Acute toxic serous myo-
carditis was observed in 126 patients; in 8 patients the cause was unknown, in 70
patients it was due to recurrent tonsillitis, in 35 patients to hepatochole cystitis
and in 13 patients to polyserositis. Relapses of myocarditis may initiate a chronic
myocarditis. Meira~ - Prague (XVIU, 6)

FRIMAK, F.Ya., prof.
Role of serous nqocarditis in clinical aspects of diseases of the
myocardium [with surmary in English]. Vrach. delo no.1:9-14 '59-
(MIRA 12:3)
1. Kafedra propedevtiki, vrLutrennikh bolezney (zav. - prof. F.Ya.
Primak) Kiyevskogo mediisinskogo instituta 1 1-11 terapevticheskiye
otdeleniya bollnitay imeni Oktyabriskoy revolyutsii.
(HEART-DISBASES)

a [~C).:r
zy vr,

Ye.
a. rp-d.
Zd
1 F Y C)~Ov
gilEL
1964. 251 P-
Kiev. :(;Uychllyj Ir'

FRDUK9 Map, prof.
Respiratory function of the blood and hypoxie states. Vrach.
delo no.12:3-7 D 163. (MIRA 17.2)
1. Kafedra propedev-tiki vnutrennikh bolezney (zav. - prof.
F.Ya. Primak) Kiyevskogo meditainskogo instituta.

FRIMAR, F. Ya., prof.
Senility, hypaxidosis, and the lymphatic aystom. Vrach. delo
no.6:5-7-62 Je 162. (MIRA 15:7)
1. Kafedra propedevtiki vnutrennikh bolezney Kiyevskogo medi-
tsinskogo instituta.
(AGING) (ANOXMIIA) (LY11PHATICS)

-. --FRIMAK. F.Ya.., prof.
Rroblem of general and particular factors in clinical pathology.
Nek.filos.vop.med.i est. no.2:319-328 t60. (MM 15:7)
1. Kafedra propedev-tiki vnutrennikh bolemey Kiyevskogo meditsinskogo
instituta imeni Bogomolltsa.
(PATHOLOGY) (MDICIRE, INTERNAL)

F-.-Ya. , prof *' (Kiyov)
Feofil Gavrilovich Uncrvskii as a teacher. Vrach. delo no,9:143-145
.1
S 161. (IMU 14: 12)
(IANOVSKII, FEDFIL GAVRILOVIGH, 1860-1928)

PRIMAK, F.Ya., prof.
Role of the October Revolution Hospital in Kiev in the development
of Russian angiocardiology. Vrach. delo no. 3:144-146 Mr 161.
(MIRA 14:4)
1. Kafedra propedevtiki vnutrennikh bolezney Kiyevskogo meditsinskogo
instituts. na baze boltnitsy imeni Oktyabrlskoy revolyutsii.
(GIMIOVASGULAR SYSTEM-DISEASES)