SCIENTIFIC ABSTRACT PRESNOV, V.A. - PRESNOV, V.A.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001342930002-7
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: January 3, 2017
• Document Release Date: August 1, 2000
• Sequence Number: 2
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

89695
S/139/6-1/000/001/003/018
Methods of Obtaining p-n Junctions. E036/E435
potassium 1w90 V, Li ^030 V, As - 20 V. These differences
cannot be explained by differences in the initial resistivities
of the germanium. The growth of current is attributed to:
1. tunnelling by a Zener mechanism; 2. impact ionization of atoms
within the junction by the current carriers in the strong electric
fields of the junctions, In diodes prepared from material of
greater than 0.5-n cm the current growth is by impact ionization.
The differing critical voltages are due to the differing depths of
the energy levels associated with the impurity atoms. This depth
determines the field at which ionization occurs. The dynamic
characteristics of diffused Ge diodes and alloyed Si diodes are
shown in Fig.4; the static characteristics are plotted in Fig-5,
I mA cm-2 vs V in volts. Ga-As diodes of the p-type have
characteristics resembling those plotted in Fig.4. The method of
producing alloyed S! diodes is not detailed, reference being made
to work by M.P.Yakubenya (Ref.3) where the wetting properties of
titanium alloyed with Ag, Ni, Cu etc ( the "active phase") are
discussed. In earlier work of the author (Ref.1) this system had
been applied to Si and the nature of the bond between Si, the
active phase and the Ti was investigated, The system has
Card 5/8

89695
S/139/61/000/001/003/018
Methods of Obtaining p-n Junctions ... E036/E435
rectifying properties, the Ti apparently behaving as an acceptor.
There are 5 figures and 3 Soviet references.
ASSOCIATION: Sibirskiy fiziko-tekhnicheskiy institut pri Tomskom
gosuniversitete imeni V.V.,Kuybysheva (Siberian
Physicotechnical Institute of Tomsk State University
imeni V.V.Kuybyshev)
SUBMITTED: September 22, 1959 Unitially)
June 20, 1960 (after revision)
Card 6/8

S/139/61/000/001/003/ol8
IMethods of Obtaininz u-n Junctions.. E036/E'135
ArM
f4v
A
'If V. I
All
PHC. 1. Pitc. 4.
Fig.4.
-Card .-7/8--

lethods of Obtaining p-n Junctions..
Card 8/8
89695
S/139/61/000/001/003/018
E036/E435
P)m 5.
Fig-5.

S/200/61/000/001/004/005
D223/D305
AUIT.Ua6~ Vertoprakhov, V. N., and Presnov, V. A.
TITLE: On the anisotropy of the transverse photomagnetic effect
in germanium
PERIODICAL. Akademi-y-a nauk SSSR. Sibirskoye otdeleniye. Izvestiya,
no. 1, 1961, 121-122
TEXT: The photomagnetic effect (FME) was discovered and investi-
gated by Academi-c�an 1. K. Kikoin-(Ref. 1: DAN SSSR, 3, 418 (1934)):
He showed that in.addition to the usual photomagnetic effect there
ex:Ls.ts a side FME (Ref, 2: 1, K. Kikoin, and Yu. A, Bykovskiy DAN
SSSR, 109, 735 (1956)), The essence of the latter conclusion is
that when a thin plate of germanium--is-illum:Lnat-ed and placed in-
side a. magnetic- field- whose direction- forma -a certain angle c4 with
the illuminated-surface. then.besides the ordinary induced emf, a
transverse electrical field results whose-direction is parallel to
the appl-ied-magnetic filed. When a . 0, the transverse FME disap-
pears.- Experimental work on monocrystalline samples of Ge (Ref, 3:
C ard 1/6

22678
S/200/61/000/001/004/005
On the anisotropy... D223/D305
1. K. Kikoin, and Yu, A. Bykovskiy DAN SSSR 116, 381 (1957)) has
shown that except for zero value when M = 0, germanium possesses
a-marked anisotropy and it was shown that transverse ME does not
conform.to the theory of Kikoin-Naskov Z-Abstracter's note.- Theory
nQ-.dp.fined_7, A. A. Grinberg (Ref. 4: FTT, 2, 153,(1960))cormects
this phenomenon with anisotropical change of resistance in a wag-
netic.field, His theoretical approach to the angle effect on RIE
has given results in close agreement with the experimental findings
given in Ref. 3: (Op.cit). The experimental results are given in
tabulated form of the investigation of FME,anisotropy on the samples
of n-germanium (these results were reported at the Vsesoyuznaya
konferentsiya. po radioelektronike (All-Union Congress of Radio-Elec-
troni-cs) in Kiev during January 18 - 25, 191;5)whose illuminated
surfaces-were parallel to the crystallographic planes (100) and
Abstracter's note: Numbers refer to Miller's indices-/
(110) Z
These were compared with the theory suggested by Grinberg,
crystallographic plane (111) the results obtained agreed with the
results of angle effect on RIE given in works Refs. 3 and 4 (Op.cit)
The samples were cut from monocrystalline ingot of Ge. (IP = 8 ohms.
Card 2/5

2 2 67 --"
S/200/61/000/001/004/005
On the anisotropy... D223/D305
cm) and 12 discs were cemented together with tin on a common axis
through a symmetrical center of determined crystallographic direc-
ti-ons. Aft-er corresponding chemical treatment of the surfaces with
perhydrol, to remove the layer cracked by mechanical treatment, the
samples were placed in a uniform electromagnetic field, the disc
bases being parallel (rA = 0) wi ,th the dLrection of magnetic field.
The angle effect on the potential of FME was measured when the side
of the - disc was.. illuminated with a white light in a magnetic f lux
of-5000 gauss. Considering that samples were cut to the accuracy
of a few degrees, then agreement of the angle effect on transverse
FME with the theory (Ref. 4.* Op.cit) can be taken as proved. The
tensor components.,T~iklm calculated according to Grinberg for
planes-(100) and.010) are given in the table below. The samples
were used-to measure-the resistance change in the magnetic field
at differently orientated vectors of electrical and magnetic fields
and.results obtained agreed in the main with publ-ished data (Ref. 6--
G. L. Pearson, H. Sulh. Phys. Rev., 83, 768, (1951)); (Ref. 7: R. G.
Annayev, A. Allanazarov, DAN SSSR, 118, 47 (1958)); and (Ref. 8:
R. G. Annayev, A. Allanazarov, DAN SSSR, 132, No 3, 557, (1960))
Card 3/5

On the anisotropy...
22678
S/200/61/000/001/004/005
D223/D305
On the basis of this investigation the area diagram of anisotropic
photomagnetic effect was constructed; it was found to possess 6
maxima- in plane < 100 > and 8 minima in plane < 111',), . It is pos-
sible that further analysis of FME could result in revealing the
forms of isoenergy planes (surfaces) in investigated material, The
authors express their gratitude to Ye. It. Samoylov for his assistance.
rAbstracter's note; Essentially a complete translation2 There are
2 figures, I table and 8 references: 7 Soviet-bloc and I non-Soviet-
bloc. The reference to the English-language publication reads as
follows: G. L. Pearson, H. Sulh. Phys. Rev.. 83, 768, (1951)~
ASSOCIATION: Institut neorganicheskoy khimii, Sibirskogo otdeleniya,
AN SSSR (Institute of Inorganic Chemistry, Siberian
Section, AS, USSR); Sibirskiy fiziko-tekhnicheskiy
institut pri Tomskom gosuniversitete im. V. V., Kuyby-
sheva (Siberian Institute of Physics and Technology,
State University of Tomsk, im,. V,. V,, Kuybyshev)
SUBMITTED: August 21, 1960
Card 4/5

9, A13 6 0 (3 2, Z,3
//37)
IZ& - W3 1--
21513
S/139/61/ooo/o02/00/ol.8
E032/E414
AUTHORS% Krivov, M.A., Malisova, Ye.V., -rxesnov. V.A. and
Synorov, V.F.
TITLE: A Study of Some Physical Properties of PolycrystallIne
GaAs
PERIODICAL: Izvestiya vysshikh uchebnykh zavedeniy, Fizika,
1961, No.2, pp.66-70
TEXTt This paper was first reported at the Third Conference of
Schools of Higher Education on Semiconductors and Dielectrics,
Leningrad, 1960.
The resistivity, thermoelectric power and the Hall coefficient of
polycrystalline specimens of gallium arsenide were measured,
The original material was synthesized directly from arsenic and
gallium and was zone refined six times (this will be described In a
separate paper). The final specimens were rectangular in form
and their dimensions were 2 x 2 x 7 mm3. The resistivity and the
Hall coefficiint were measured with the aid of ohmic tin contacts
fused into the specimens in a vacuum at temperatures of the order
of 6oo to 700OC- Before measurements were begun, the specimens
Card 1/6

21513
S/139/61/000/002/008/018
A Study of Some Physical 9032/E414
were immersed in a solution containing 20 ml of NaOH and
4 M.1 of 30% H202 (G,K.Averkiyeva, O.V.Yemellyanenko, Ref.1)
After this treatment they were washed in boiling distilled water,,
Fig.1 shows the temperature dependence of the electrical
conductivity and carrier concentration calculated from the Hall
measurements under the assumption that the hole concentration was
negligible. It is estimated from the slope of the curve
representing concentration as a function of temperature that the
activation energy of the donor impurities was 0.12 ev. Fig.2
shows the thermoelectric power as a function of temperature for two
gallium arsenider specimens at different average temperatures.
Using the Pisarenko formula (Ref.2) the magnitude of the effective
mass of the carriers was estimated to be of the order of O~27 m0.
The experimentally determined temperature dependence of the
concentration was compared with its theoretical value computed
from the formula
Card 2/ 6

S/139/61/000/002/008/018
A Study of Some Physical ... E032/E4i4
K A + + A('(IV.'- Na 112
0-68 n 2
K, = (2rm-'k Tlhl)',' e- lrjtlkT
where NA and Na are the donor and acceptor impurity
concentrations, nre" is the effective electron mass, and 'aEA
is the donor activation energy. it was found that
NA = 1.18 x 1018cm-3 and N. =_1.10 x 1018cm-3. _n addition, the
contact potential difference of gallium arsenide specimens relative
to a standard platinum electrode was measured. The measurements
were,carried out on polished and etched specimens in air and in
vacuum at various temperatures in the range 20 to 850C. Fig.4
shows the temperature dependence of the contact potential
difference of germanium and gallium arsenide in air, The
continuous and dashed curves refer to etched and polished specimens
respe6tJvely. Fig.5 shows the contact potential difference as a
function of air pressure after etching'. Fig.6 shows -the variation
Card 3/ 6

21513
3/I39/6i/ooo/co2/oo8/oi8
A Study of Some Physical _;,C7z/zq14
in the contact potential difference on heati-ng in vacuum.
A quantitative analysis-of these results i., not given since the
specimens were polycrystalline and tht! rest.-Its are therefore said
to be "not entirely reliable". The general conclusion is that
changes in the surface properties of gallium arsenide are
associated with the properties of surface compounds formed during
the etching process and subsequent adsorption of components from
the surrounding medium. Students I.A.Vinitskaya and
L.Ye.Smirnova took part in the measurements. Acknowledgments
are expressed to the Senior Scientist of SFTI, Candidate of
Physical Mathematical Sciences A.P.Izergin and Engineer
V.A.Zgayevskiy of: the Technical Division for taking part in
discussions of the results. There are 6 figures and
6 references: 3 Soviet and 3 non-Soviet.
ASSOCIATION: Sibirskiy fiziko-tekhnicheskiy institut pri
Tomskom gosuniversitete imeni V.V.Kuybysheva
(Siberian Physicotechnical Institute at the Tomsk
State University imeni. V.V.Kuybysgev)
SUBMITTED: October 17, 1960
Card 4/6

t, !~Z343 EWP(J)/EWT(1)/LW(k)/EWT(M)/BI4/EW(~)-2 AFFTC/ASI)/ESD-3
Pc-4/11,4-~4 MVATAR(9Y_.._
s~ACCESSIOWNR: AT3003003 sliiiiel6ildbdl I t8/62b5
-AUTHOR: KaWev, G. A.; Preesnov,, V., A.; Cheglokcrr, Ye. ZWevskiy, V. E.1-
patuyem,
1!TITIE- Effect of plwsicochemical conditions of surface on the parameters of
~Igermanium p-n junctiondt[neport of the All-Union Conference on Semiconductor
Devices held in Tashkent from 2 t6 7 Octob~F ~11T
SOMM: E1ekt=nw-dY,*rochW*ye perekhody* v poluprovodnikakh. Tashkent,, Izd-vo
ssn,, 1962' 198-205
Ali Uz
I TOPIC TAGS: germanium transistor, germanium transistor fftabilirALtion.
ABST%CT: Complex chemical and adsorption compoinids deteimine the concentration
f and position of energy levels of imp=lty centers and also the recombination
cc-tditions and conductivity of the semiconductor Theoretical and experimental
studies of the surface conditions reported in the article vere intenddd to help
in solving tl~e problem of stabilization of Ge devices. Effect of the surface
potential on the parameters of semiconductor devices is considered, and theoretical
~'current-Gain vs. sua-face charge and current-voltage curves are presented. E~Ter-
ments vere conducted with P-5 and P-0 open-type Ge transistors Vnich were treated
Vith awines (ani2ine.. dimethylaniline, anilim black, quinoline, triethylamin
Cord

ACCES3ION IM: AT3003003
7 with As) Se,, Mg., Zn, The amino treatment brought about the following results: f
(1) amine adsorption lowers the reverse collector currents; (2) it also affects
4, the gain which increases or decreases -depending an the basicity of the emine in
,question; (3) durability of the adsorption bond, which,is connected with the s(!Mi
,conductor-device stability, depends on the type of amine used; (4) amine treatment
i makes the surface charge less negative, Detalled explanations of the above re-
suits are offered, Adsorption of elementary sd)stances has revelaed that As, Se,
1% increase the gain and decrease the'collector cVtrents; zz~k
,, as the reverse effec
Protective coating of treated surfaces by RPF,-4()lVand EK-SO14namels was also tested:
Orig. art. has: 4 figures, 8 formulas, and-T-WIes.
PMOCIATION: Akademiya nauk SSSR (Academy of Sciences SSSR) Akademiya nauk
:Uzbekskoy SSR (Academy of Sciences UzSSR) Tashlgantskiy gosudarstvenny*y universiteV
Tashkent State University)
00 DATE AcQ: ismay63 -ENCL: 00
.:SUB CDDE: 00 NORM SOV: 003 OTW: 004
lCard 2/2

-L 18995-63 EPF(c)/EWT(m)/EWP(q)/BDS AFFTC/ASD 'Pr-4 P14/WW/
i
D/MAY/JG/AB
ACQESSION NR: AT3002455 S/2935/62/000/000/0211/0217
AUTHOR: Katayev, G. A.t Presnov, V. A.; Batuyeva, Ye. N.; Katayev, Yu. G.;
!Lyuze, L. L.
TITLE: Effect of adsorptioAf some~,amines by the semiconductor upon the
fundamental parameters of rmaniurkhransistors (Conference on Surface Properties
_&e anlu
of' Remi-e- nduc1Du._j=jj ___M -6 June 1961]
tute of ectrochemistr~~, AN SSSR, Moscow, 5
.SOURCEt PoverkhnostrV-*ye svoystva poluprovodnikov. Moscow, Izd-vo AN SSSR, 1962,
211-217
iTOPIC TAGSt semiconductor, adsorption, amine adi3orption, transistor, germanium
;transistor
ABSTRACT: The following aliphatic- and aromatic-series amines were used in the
,experiments as adsorbates: hexamethylene-diamine,ltriethylamine, ammonia,
;p-phenylenediainine, p-toluidine, dimethylaniline,lbonzidine, anV11ne, bota-
naphthylamine, diphonylamine, aniline black. The results of adsorbin by type
P-5 transistors aret (1) Reverse collector currents have decreased; ~2) Gain has
iincreased or decreased depending on the amine basicity; (3) Adsorption bond
strength as judged by the time stability of the transistor parameters depends
on the amine nature; (4) Surface charge has become I'less negativeH. The above
Card 1/ 2

L-18995-63.
ACCESSION NRi AT3002455
phenomena are explained by donor-acceptor interactions between the adsorbed
molecules and Ge surface. Orig. art. hasl 3 figures, 4 formulas, and 2 tables.
ASSOCIATIONt Tomskiy gosudarstvenny*y universitet im. V. V. Kuyby*sheva
!;(Tgmsk State University)
SUBMITTEDt 00 DATE ACQi 15May63 ENCL; 00
SUB CODE: PH
NO REF SOV: 003
OTHMt 005
2/2
ard
C

L i8996-63 EPF(c)/EWP(q)/EWT(m)/BDS AFFTCYASD Pr-4 Rmlwdl
JD/MA"Y/JG/AB
ACCESSION NR:"AT3002456 S/2935/62/000/000/0217/0221
.".AUTHORi Presnov, V. A.; Lyuze, L. L.
f Yi
TITLEi Effect of amine adA2!:ptionAn the surf ace charge in 3.~rman~~ [Conference
on Properties of Semiconductors, Institute of Electrochemistry, AN SSSR, Moscow,
SOURCEt Poverkhnostny*ye svoystva poluprovodnilcov. Moscow, Izd-vo AN SSSR9 1962,
217-221
TOPIC 'TAGSj amine adsorption, germanium, semiconductor, surface charge
ABSTRACT: Experiments e reported with the effect of adsorptio lof triethylamine,
hexamethylene-diamine, aniline black, diphenylamine, and beta-naphthylamine by
~ra
high-resistivity ger ium. Surface potential was measured by the a-c field-effect
i
,method.. A special holder for the Ge specimen was designed (drawing given).
.Strongly basic amines caused a considerable decrease in the negative charge.
.WeaKiy casic amines brought about an increase in the hegative charge. Orig. art.
.bast 2 figures, 1 formulas, and 2 tables.
,Card 1/1
i ASSN: Tomsk 3ktate University.

AMC JD
'ACCESSION NR: AT3003015 S/2927/62/000/000/0254/6258
!AUTHOR: Presnov, V. A,; Gaman, V. I,; Sirotkin., A. A*
icon _n
iTITLEs Effect of a low-malt glass coating on the characteristics of sil
t
Aunctions [Report at the All-Union Conference on Semiconductor Devie-e`3770-hken
i2-7 October, 19613
JSOURCEt Elektronno- - grcrwth rate, 50 -100 /JLL/hr),
,,6000,
The average size of the crystals in the films produced by distillation and the
iodide method was 4-5~x. Typical curves of the conductivity (r, Han coefficient
R, and thermo-emf coefficient o( versus temperature for certain polycrystalline
films are given in Fig. 1 on the Enclosures It is shown that the sublimation and
iodide methods produce polycrystalline and epitaxial Oaks films that are fairly
uniform in thickness and resistance. Both methods also allow doping with Zn.0 Cd.,
and Se. Origs art. hast 10 graphs, 1 diagramj 2 tabless and 1 formla.
ASSOCIATIONI
SUBMITTED: 060ct64
ENOLs 01
SUB CODE: SS
No REF SOVt 004 OTHERt 002
Card 213

L 3368-66
ACCESSION NRt AT5020469 ENOWSURS s 01
V
AN'
FIR
Fig. 1. Curves of conductivity, Hall coofficientg
and thermo-emf coefficient versus temperature for
polycr7stalline specimen
Card 313 144

L-3367-66 EWT(1)/E,',[T(m)/T/EWP(t)/EWP(b)/F,'elA(h) IJP(c) JD/GS
ACCESSION NR: AT5020491
AUTHORS1 Khludkov. S. S.; Vyllkin, A. P.; ("rishin, V. lo; Presnov Ve Ap-(Pro-
fessor)
TITLEI Diffused p-njunq ions in gallium W.-senide 13 -t-
SOURCEI okays nauchno-tekhnic 03)UU3
x1\T49zhvUzo1 konferents a Do fizike
poluprovodn:Lkov ( orkhnostnyye i kontaktWe yavleniya). Tomsk, 1962.
Poverkhnostnyye i kontaktny yavleniya v poluprovodnikakh (Surface and contact
role
phenomena in semi~onducto . Tomsk# Izd-vo Toms kogo univ., 1964# 446-456
TOPIC TAGSt gallium arsenide,, pn junction, sulfur,, germanium. selenium
ABSTRAM Diffused'p-n Junctions in p-type gall -- arsenide, p-n junctions in
n-type GaAs, and also p-n-p structures in p-type GaAs were studied, and the meth-
.oda of producing these Junctions are discussed. The p-n Junctions were produced
b7 diffusion of sulfur and germianium in evanuated quartz ampules (10-4-10-5 mm Hg
.:L"o
with subsequent annealing, grinding, and etching (5% NaOH + 30% V202 in 5:1 ral 511
The p-n-p structures were prepared by diffusion annealing of GaAs in sele"i""
vapors at 750-UOOC for 0,5-22 hre with a solenius concentration in the vapor of
Cori 1A

L 3367-66
ACCESSION fiRt AT5020491
5-1017-9-1019 on -3; The static volt-ampere characteristic of a Junction pro-
duced by diffusion of sulfur into p-typs GaAs is shown in Fig. I on the Enclosure
The gernanium-diffusion junctions in the p-type GaAs had rectification factors of
UP to 40105, while those produced by sulfur diffusion had a factor of 6*10. In
the ease of n-type GaAsp the-garmnium-diffusion junctions had a rectification
factor of about 7,104, The volt-ampere characteristic of contacts in GaAA-Ga2Se3
film in shown in Fig. 2 on the Enclosure., Orig. art, bass 7 graphs., 2 diagrams,
and 2 formulas,
r 'i
ASSDCIATIONo none'
litL
SUBMITTEDt 060at64 RNOM 02 SUB COM SS
NO RZF SOTS 005 OTHERs 007
Card

L 3367-66--
ACCESSION M AT5020491 ZNGLDSURE 01
j f I
r7
Fig* 1e Static volt-amL)ere characteristic of Jubation produced
Card by diffusion of-sulfur into p-!tM_ GaAs

L 3367-66
ACCESSION Mi AT50204% EWWSURSt 02
M .IL
ep
a.
147
m0
Volt-ampre charactoristio of oantacts 'a 04"442S*3 fjlm

L 1117-66 EV1T(m)/EWPW/EV1P(b) IJP(c) JD/GS
ACCESSION NRs AT5020497 UR/0000164100010091049110494~
AUTHORSs Presnov, V. A. (Professor); Bozhkov, V. G.
TITLE: Calculation of the surface charge for a Metal with iin atomically pure
~surface coinciding with face (III)
iSOURCE: Nezhvuzovskaya nauchno-tekbnicheakaya konfersnts~ya p0
poluprovodnikov (poverldmostrjyye i. kontaktnyye yavlpniy Tomskt 1962. -75
lPoverkhnoo e _ik_o_n_1a'_k't'nyye yavleniya v poluprovoanikakh- I urf ace and contact
:phenomena in semiconductors). Tomsk, Izd-vo Tomskogg unitvv. -494
1964t 491
!TOPIC TAGS: semiconducting materialt germanium, crystal, excited state# eleotron
trappingg electron hole
IABSTRACT- Expressions are drivea for calculating the surface charge of a crystal I
:with an atomically pure surface that coincides with face (111), under the assumption
~~that this charge is a result of either pairing or breaking of an unsaturated surface,
I taken
,-atom bond. The effect of excited states on electron and hole trapping is not an
linto account. The calculations were made an the basis of the woik of W. Shockley
land J. T. Last (Pbys. Revot v, 107f No. 2# 195* It is found that a negative
is present on an atomi2~1~ljpare germanium surfsoe boundod by fao* (111). Orig.
iCUTd 1/2

L 1117-66
ACCESSION XR:
art. hast 1 diagram and 22 forwil".
4SSOCIATIONs 'ri6im
SUBXrf=: 06oct64
NO REP SOVj 001
4
ENCM W
001
M COM 88
Card 2

t 3371-66 E'dT(m)/EVTPQ)/T rsIRK
]ACCEWI0F NR: AT5020498 UR/00DO/64/000/000/005/0,50
AUTHORSt Presnov, V. A!Y('P'-rofessor); qelivanova, V. A. 5-S-
liftIC;t~ IM"
TITLEz On the problem of an electronic theory of crystallization of semiconductor
compounds of type A111 and BY
S0URCEi,\'\1MezhuzovskaYa nauclino-tokhnicheakaya konforentsiya Po rizike
YV.LUFAWVW%"~WV L milavalLulijya jVCLV.LC"444%j* ZVUUJr,$ L7V&*
Poverkhnostnyye i kontaktnyye yavleniya v poluprovix1nikakh (Surface and contact
phenomena in semiconductors). Tomsk., Izd-vo Tomskogo univ.p 1964, 495-5o3
"1