SCIENTIFIC ABSTRACT PLOTNIKOV, A. F. -

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SCIENTIFIC ABSTRACT
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PLOTNIKOV A.F - VAVILOV,, V.S.; KOPYLOVSKIY,i D Apparatus ror-studying the spectra and kinetics of photoconductivity in semiconductor cryAtals. Prib. i tekh. ekAp. 7 no.3:183-187 my-je 162. (MIRA 16:7) 1. Fisicheskiy institut, AN SSSR. (Fhotoconductivity) (Semiconductors) VAVILOV, V.S.; GALKIN, G.N.; KkLOVETSKAYA, V.M.; FLOTNIKOV, A.F. I Photoionization and thermal Ionization energies of deep bevels of radiation defects In silicon. Yiz.tver.tela 4 no.7:1%9- IWO J1 162. (MIRA 1636) 1. Fizicbeskiy institut imeni P.N.Lebedeva MI SSSR, Moskva. (Silicon crystals-Defects) (Ionization) TKACREV, V.D.;_-PLOIIIIKOV,, A.F.; VAVILOV, V.S. Photoconductivity spectra of n-typo allicon irradiAtOd by fArit electrons. F-Iz-tver- tela 5 no.7:1826-1829 n 163. (miRA 16:9) 1. Fizichaskiy institut imeni P.N.Labodeva A14 SSSR, Moskva. (Photoconductivity) (Silicon-Spectra) AKIMMIIXO# I.P.; VAVIjbV~ V.S.; PIDTNIKO'V, A.F. Spectra and the kinetics of photoconductivity related to simple structural defects In germanium monocrystels. Fiz.tver.tela 5 no-5:1417-1422 My 163. OaRA 16s6) 1. Fizicheskiy institut imeni P.N.I&Wdeva AN =R, Moskva. (Germanium--Swtra) 027'stais-Defects) (Photoconductivity) TKACHEV, V.D.; PLOTNIKOV, A.F.; VAVILOV, V.S. Nature of local centers with deep-seated levels in silicon irradiated by fast electrons. Fiz. tver. tela 5 no-11:3188-3194 N 63. (MIRA l6sl2) 1. Fizicheskiy institut imeni Lebedeva AN SSSR, Moskva. )/EWT(m)/BDS/XEC(b)-9 :AFFTC/', ]gwT(1)/EWG(k)/E -L 13030 WP(q -ASD/ESD-3 -JD/AT - - ociD524 AGCEW.TON_ INR: AF3 S/0181/63/005/005/1417/1.422 AWHOR. Akimahenko I. Po; Vavildv, Y. S.;. Plotalkov, A. F, Adui ailivi-tv simple Tr=: spectra and kinetics of photocol associatedvith istructural defeety(in single crystals of germanium 1411-1422 ISOURCE: Fizika -everdogo tela, V. no- 5~ 1963, TOPIC TAGS: photoconduct capture cross seat ion, vacancy, interstitial, Ge, ivity, Au" !ABSTRACT: The authors have Investigated the photoconductivity associated with deep levels of radiation effects, arising during bombardment by -electrons (1 mev) of Very pure- single crystals.of Geand of single crystals alloyed with Au. They conclude that a detected level of E sub V + 0.42 ev., belongs to an interstitial atom. The capture cross section corresponding to relaxation at the latter level was computed to be 3 times 10 sup.-17 Sq/cm., From this value the effectiveness of insirting centers and the results fell within the limits of experinent-al error., In conclusion the authors consider it their pleasant duty to express thanks to ;M. I. Iglitsy:*n for discussi the results.. and to M. 1. Ginzburg and G. P.: ng Proshko for supplying the single crystals of germanium. Orig. a Sgt. has: 10 es Associationz Inst. of Physics, Academy of Sciancest SS R 'Cc AKIMCHENKOY I.P.; VAVILOV, V.S.; PLOTNIKOV, A.F. Some data on radiation defects derived from pho-Loconductivity spectra of germanium irradiated with fast electrons. Fiz. tver. tela 6 no.6.-1718-1723 Je 164. (MMIRA 17:9) 1. Fizicheskiy institut imeni Lebedeva AN SSSR, Moskva. !ACCESSION 1AUT11OR: NR: AP4039659 S/0181/64/006/006/1718/1723 Akimchanko, I. P.; Vavilov, V. S.; Plotnikov,,. obtained through TITLE: Some data on radiation defects investigations of photoconductivity spectra of germanium irradiated vith fast elac- trons SOURCE: FLAika tverdogo tela, v. 6. no. 6, 1964. 1718-1723 1TOPIC TAGS: radiation defects, fast electron irradiation, p type ,germanium, n type germanium, germanium, fast electron irradiated !germanium, germanium photoconductivity spectrum, irradiated germanium~ jphotocf)n(luctivity spectrum, forbidden zone !ABSTRACT: The following types of Ge single crystals have been irra- I i.diated by fast electrons with energies ~1 Mev at room temperature: 1(a) n-type with initial resistivities P of 3 and 56 ohm-cm; (b) dia- Jocationless n-type, P ^--1 3 ohm-cm; (c) p-type with a residual im-~ i :purity concentration of 1011 to 1013 at/cm3. The ohmic contacts were ;realized by the deposition of colloidal graphita. Photoconductivity I ispectra were measured at -' 100K - in the 1.7 to 10 la wavelength range. Card 13 ACCESSION NR: AP4039659 jIn the irradiated specimens the Fermi level was located 0.10 to 0.17 ev below the bottom of'the conduction band. Some of the conclu- sions drawn from the results of the investigation are: 1) following Arradiation with a flux of 6 x 1015 el/cm2, the photoconductivity spectra of n-type specimens showed the occurrence of a structure which can be connected with electron transitions from local levels Er-0.33, .Ec-0.37 and E.-O.43 ev to the conduction band. When the to! .1 alec- tron flux is increased to 3 x 1016 el/cM2 the specimen acquires char- acteristics of P-type Ge; 2) spectra of type (b) specimens allow that vacancy concentration increases almost proportionally with increased flux and that at a certain value of the electron flux there is an ,increase (by almost one order of magnitude) in the concentration of centers which yield a constant distribution of photoconductivity sig- nals in the 2.5-1.9 ji wavelength range; 3) a new maximum was detected. ,in the spectra of type (c) specimens which occurred in the presence and disappeared in the absence of bias lighting from the region of natural absorption; 4) at wavelengths up to 5 U, the spectra of type .(c) specimens showed a build-up of signals connected with electron transition to level Z, --~- 0.33 ev in the presence of a Go filter; wh~en no filter vas used &,.maximum appeared at a wavelength of 3.15 1&; Card i/3 ACCESSION NR: AP4039659 '5)in nonirra-diated type (c) specimens the disturbance which introduces ~Ievel E -~- 0.33 ev is due to copper atoms, while in the irradiated ,type (cy specimens it is due to the joint action of copper atoms and :vacancies; 6) for the irradiated (c) specimens the hole-capture :crass-section of level Ev-4- 0.33 ev is at 1006K 5 x 10-19 cm2. Orig. art. has: 9 figures. ASSOCIATION: Fizicheskiy institut im. P. N. Lebedeva AN SSSR, Moscow (Physics In.stitute, AN SSSR) SUBMITTED: 28Dec63 DATE ACQi 19Jun64 ENCL: 00 ISUB CODE% 1JP NO REP SOVt 007 OTHERt 000 Card 3/3 j _1 2927~~_ W 'AW F(t)AO(A)~21 (t b)~ P WT J61&lAi R; APS005291 5/0101/65/007/002/0502/0505 AUNOR1:'Vav1lovA:V4 S i V1ntcvkin,_S. tyut~*hf Ab St'i4plotnikov, A.-J.; fl? S olova, A. As ok i! TITLE., Radiation structure defects 'in verv oureamocrystals of silicon ID I $ SOURCE: Flzikii tvelrdogo telal, -0 i. 7, no., 2,1965, 5021-505 i effect, electron*bom- 7,-,L%` TOPIC TAGS: -siilconi pbotocon i4ity Aefict~'radist on u -of p STRACT: ~-Thik -iphoto ondu ti it .trum'-or very, pure amocrystals -type sili conv fiAnvestigated,: rior to,ancl h A-Me,0- electrons..: -The P. .~if ter Irfridiati n VAt :pr Dated by crucible- Alting 16f very pure silicon. The re- ..samp es-were b 'free zbne.ni y -samples was 20 obm* -, the lifetime ~ of the toinority carriers sistivit ~cf the cm 0 cm2/'.VeC._ The crystals had IW-1000 flisec, and tb(-* hb~le nobility 209-35 v -i0 -.101.2 3 I I donors)/CM3 _And 5 acceptors/cm , The 12~x 2.5 x 0.4 samples were aiitea at, r*,Dm temperature and at-the-temperature ofjlquid nitrogen with a 15 elect 2 169 vitb a resistivity Iltmof 5*10 rous/cm i The photoconducticity of samp ainitig Pw3-1016 atom of oxygen per ~CM3 Vaa also investigated. ~Df 1030 obm'cm cont itpurity present --.1n4be crystal samples was The experiments showed that the, main A/3- j-, _1~2074-65 fj ACCESSION NR: AP5005291 Oms/c'm-. Electron bombardment boron t_6 concentration of which was 5-10.,1012 3 at,80K'resulted n nuous di tributIon of'allowed states -in the -app arance~ f acc ti a e 0 in the forbidden gap probably associated with point.radiation defects. After heat- 'Ing of -e~_ saImIplea; t- o_ __:r_6ozn temperature -only. one discrete level, the E + 0.45 ev level, was found'in the forbidden gap when the concentration of oxygenvatoms was small; however, three levels (Ec-0-16, Ev + 0.30, and Ev + 0.45 ev) were found in ;ITsamples with a large concentration of oxygen atoms. The density of other electri- active as lower by 1.5-2 orders of magnitude. Electron irra- :ca -impurities w, 'diation7at.room temperature d change.the-resistivity of the samples. Bom- id not bardient at 80K Increased the resistivity of samples quite sharply, although it tben-leveled off to a constant value. Resistivity decreased and returned practical- ly to Its initial value after Irradiation was ceased. Considerable fluctuation of photoconductivity (noise) was observed in extremely pure crystals irradiated at Box. 1. Bombardments of - the not very pure samples gradually decreased the lifetime of charg7e carriets;,.,.ho-We-ve-r, room7tempe .rature:ir_r4diatioiv:of.ve_ry pure crystals wit4k fluxes up to 50106 electrons/cin hardly affected the lifetimes, -_.Bombardment of very pure crystals at BOX decreased the lifetimes by 3-4 orders of magnitude. Initial lifetimes were restored almost completely after irradiation was stopped. ICS) fOrig. art. has 2 figqres. KRIMAN, I.; PLOTNIKOV A inzh. Textbook on steam boilers. Yor. flot 25 no.5-.40' vv 165. 18: ~~) 1. Glavnyy inzh. Kaspiyskogo parokhodstva (for Kriman). J-Y';TC "AVIL'--V, Ra t -71 y tek'f--nichesl:iy institut 1"li IjAlbel~-'-ov SLP, 1010~1-67 . Fw(-1)1Ew(m)1Ew(0hTi in(c) JD/00 ACC NR: AP6030957 SOURCE CODE- UR/0181/66/008/009/2598/2604----7 q L) AUTHOR: Vavilov, V. S. ; Plotnikov, A. F. ; Sokolova, A. A. -91 ysics Institute im. P. N. Lebedev, AN SSSR, Moscow (Fizicheskiy ORG;_Eh institut AN SSSR) TITLE: Oscillating photoconductivity of cadmium telluride and its connection with exciton absorption SOURCE: Fizika tverdogo tela, v. 8, no. 9, 1966, 2598-2604 TOPIC TAGS: photoconductivity, cadmium telluride, exciton, exciton absorption, absorption spectrum, absorption coefficient, heat of dissociation, impurity center ABSTRACT: The spectra of photoconductivity, optical absorption, and reflection of CdTe crystals near the basic absorption band have been obtained at 80 and 15K. A thin structure of photoconductivity spectra is detected. It is established that the dependence of the absorption coefficient on photon energy is rionmonotonic. The peak reflection in the photon energy region close to 1. 58 ev is noted at 80K. The absorption and reflection observed are interpreted to be of tile exciton type. The structure of photoconductivity spectra is related to the development of excitons and 1/2 I-M51-67 ACC NRt AP6030957 their heat of dissociation with the participation of impurity centers. The authors thank B. M. Vul, L V. Keldysh, N. A. Penin, and E. L. Nolle for their valuable remark's and criticism of the work, S. -A-.Medvedev and S, N. Maksimovskiy for furnishing the samples, and N. N. Borzunov for his considerable assistance in preparing them for the experiments. Orig. art. has: 4 figures. [Based on authorst abstract] [ NT] SUB CODE: 20/ SUBM DATE: 14Jan66/ ORIG REF: 003/ OTH REF: 014/ L 23310-66 _Er41_MV_F_1,"P(t) 1 J-P, (r) in- ACC NRs M6012480 SOURCE CODE: UR/0181/-K6-/00-8[6-0-4/1-1-6--86-,r'1-1-' AUTROR: 1 _Wmchenko, 1. P.: Ginzburg, M. I.;.Plotnikov, A. F. ORG: Physics Institute im. P. N. Lebedev AN SSSR, Moscow,(Fizicheskiy institut AN SSSR) ~tITLE: Spectxa and kinetics of photoconductivity of p- and n-t ype_j~.rmanium crystals ,irradiated with.fast electrons at 100 and 5.2K 1-7 SOURCE: Fizika tverdogo tela, v. 8, no. 4, 1966, 1168-1175 TOPIC TAGS: photoconductivity, Irradiation effect, Irradiation damage ABSTRACT. An investigation was made of the photoconductivity spectra of p- and n-type Ge c stals with a concentration of residual impurities not higher than 8 x 1012 CIP , irradiated with fast electrons at 100K and 5.2K. The thickness of the specimens, 0.4 mm, permitted homogeneous distribution of defects at electron energies of 1 Flev. The investigations at 5.2K were carried outin a helium cryostat. The irradiation of crystals a7nd the investigation of photoconductivity spectra were a.ccomplished without-exposing the crystals to air after irradistion. Photoconduc- tivity spectra were taken in the wave range from 1.5 to 15 V on d-c and a-c current. N-type Ge with intrinsic conductivity was transformed into p-type following irradia- tion with an electron flux of -1015 el/cM2 and higher at 100K. Defects of the same nature were introduced into transformed Ti- as well as p-type material...causing Card NRt AP6012480 d] EV + 0. 36, Ev + 0. 42, and EV + 0. 62 ev Levels, to appear. Irradiation at 5. 2K introduce defects into n- and p-type crystals, leading to the appearance of Ev + 0.22, EV + 0.36, Ev + 0.42, and E + 0.62 ev levels. The cross sections of hole capture v 14 for Ev + 0.22, Ev + 0.36, and Ev + 0.42 levels were 3 x 10 , 2.5 x 10-15, and 8 x 10-16 cm2,respectively. The comparison of 6 for the Ev + 0.36 and Ev + 0.42 ev ~levels obtained at 100 and 5.2K shows that when temperature decreases 6P increases. The author thanks V. S. YAvilov for the attention given the work and for discussing -the results.- Orig. art. bag: 7 figures. [JAI SUB CODE: 20/ SUBM DATE.' 09Sep65/ ORIG REF: 005/ oTH REn 004/ ATD PRESS: Car.~ 212' ;kCC-k-R,AP603-6995-- SOURCE CODEz UR10101/66/oo8/oii/33qu/339i AUTHORi Vavilov, V. a.-, Plotnikov, A. F,; Solezneva, M. A. Bokoloya, A. A. ORG: Physics Institute im. P, N. Lebedev, AN SSSR;,Moucov (Fizicheskiy institut AN SSSR) TITLE: Dependence of charge carrier mobility on temperature in GaAs crystals*irradiated 'with fast electrons SOURCE: Fitika tverdogo tela, v. 8, no. ii, 1966, 3390-3391 TOPIC TAGS: carrier scattering, current carrier, irradiation,,ionizing irradiation,irradiation effect ABSTRACT: An investigation was made of the effect of radiation defects ih the crystal structure of GaAs on the scattering character of the charge carriers at different temperatures. Four pure sp ecimens, in which the mobility of charge carriers at temperatures from 100 to 300K was due mainly to the scattering on optical lattice vibrationa, were irradiated with a gradually increasing flux of electrons with an energy of about 1 Mev at room temperature. In pure GaAs crystals at tempera- turea higher than 300K. the mobility in due primarily to the scattering on polar optical-lattice vibrations.- At-tempeioatures lover thaa 100K scattering on ionized impurities prevails. In the tempmuture* kange from- 10D10 Card ACC NRt AP6036995 300K, both types of scattering take place,,although with an increase in, impurity concentration the scattering on ionized impurities becomes more substantial. In irradiated crystals the mobility was due to scattering of charge carriers on simple point defects. The calculated number of displaced atoms due to irradiation c-oincided with the number of scattering centers determined experimentally. This proves that structure defects affecting the scattering character in GaAs crystals irradiated with electrons are really Frenkel defects# Orig, art* hass 2 figures, SUB CODE: 20/ SUBM DATE: 2or4ay66/ oTH REFt OOT/ ATD'-'~.':PRZSS t510 7 Card 2/2 ACc NRt A P6036996- ~A SOURCE CODE: AU77-1'011; Plotnikov, A. F. &el6ineva, M. A. ~WI6167f16 ~/oo8 / 0 ll/ 3 3 W33 9~~ ORG: Yhysics institute im. P. N. Lebedev, AN SSSR, Moscow (Fizicheskiy -institut AN SSSR) -inU: Influence of fast-~electron bombardment on the spectra of photoconductivity of GaAs crystals grown in an oxygen atmosphere SOURCE: Fizika tverdogo tela, v. 8, no. u, 1966, 3392-3393 TOPIC TAGS: electron bombardment, photoconductivity, gallium arsenide, crystal growing, impurity center ABSTRACT: The authors investigated the influence of bombardment with 1-Mev electronsl on the photoconductivity of n-type GaAs crystals with,carrier density n = 1016 Cm-3 I and mobility 3000 cM2/v-sec. The photoconductivity of an n-type sample grown under ihe same conditions but not specially doped with oxygen was also investiga photoconductivity.was investigated by the method described by the authors earlier (PTE no. 3, 183, 1962). The samples were irradiated at room temperature and measurements were made in a cryostat at liquid-nitrogen temperature. Bombardment with afjUX Of 1017 el/cm2 produced in the undoped crystals impurity centers with levels Dv + 0.59 and Ev +-0.34 ev. In the case of samples grown iii an oxygen atmo- Nre sphere, additional centers with level Be - 0.65 ev were observed. These centers we also observed in some samples before irradiation. In both cases, the concentration of the various centers increased with electron bombardment. It is proposed that thist- Card 1/2 ..A CCNR, Ap6o36996 due to the fact that the GaAs produced in an oxygen atmosphere has more oxygen in ,--the crystal lattice in an electrically inactive state, and that electron bombardment "trans'L"ers these oxygen atoms into a state connected with the level Ec o.65 ev. This is confirmed by other published results. The authors thank G. M. Voronkova for supplying the GaAs single crystals. Orig. art. has: 2 figures. SUB CODE: 2o/ suBm DATE: 2obw466/ oRiG REF:. ooi/ OM REF: 001 Card- 2/2 FLOTNIKOV, A.I. f Increasing the precision'of the check of automobile wheel alignment. Trudy NPI 131t41-47 162. 011RA 16:3) (Autombiles.-Wheels) e brj TESy? y a man e,-- ta, SSR. Ser.macol. 22 165. U .1 ALI ma A genlorjc1heskoye upravleniye, A LADYZHENSKIY, N.R. [Lady7-henslkyi, M.R.);_LLOTIL ~K,gy 'J.; GORDIYJEVICH, V.A. ~,_.A 4 1 [Hordlyevich, V.A.) Sulfur cn the Dzhau-Tepe mud volcanoe (Kerch Peninsula). Dop. AN URSR no.5:640-643 165. (MIRA 18;5) PLOTNIKOV. Aleksandr Mikhaylovich; YAKOVIEV, Igor' Vasillyevich (The SGS-3 kWdraulic Jack] Gidravlicheskaia Btoika SGS-3. Moskva# Nedra, 1965. 74 P. WIRA 18:4) PLOTNIKOV Alek U-L4~Uggao , ; SLAVOROSOV, A.Kh., red.izd-va; -- Upb --M---MZORDVSUYA, V.L., tekhn. red. [Development miner] Prokhodchik podgotovitelinykh vyrabotok. 3., perer. i dop. izd. Moskva, Gosgortekhizdat, 1963. 254P. (MIRA 16:9) (Mining engineering) DUBETS, Stepan Grigorlyevich; PLOTNIKOV, Aleksey Mikhaylovich; NAUMKIN, I.F.J. nauchn. red'.-; BYROVA, 1.V., red. [Industrial training of miners of horizontal and inclined worldmgs; the coal industry] Proizvodstvennoe obachenie pro- khodchikov gorizontallnykh i naklorn7kh vyTabotok; ugol'naia promyshlennost'. Moskva,, Proftekhizdat, 1963. 102 p. (MT-RA 17:4) c", PIDTNIKOV h SAVITSKIT, V.T., otv.rod.; -va; ALADOVA, Te.l., tekhn~red. [Driftman] Prokhodchik podgotovitellnykh vyrabotok. Moskva, Ugletakbizdat, 1958. 248 p. (MIRA 11:12) (Coal minen and mininig) IVANOV, X.M.;, PIDMIKOV, A.M. Dwrice for bonding standard specimens. Plast.massy no.6:73-74 160o ~ (XIRA 13: U) (Pustics) (Adhesion) PIDTHIKOV. A.M., otvetstvennyy za vypusk [Curriculum and program of building and trade schools for training oil fial workers) Uchabnyi plan i DrogramaW dlis podgotovki v reneelannykh uchilishchakh operatorov po dobyche nefti. Moskva. Teas, uchebno-pedagog. izd-vo Trudrezervizdat, 1957. 43 p. WRA 11:4) 1. Russia (1923- U.S.S.R.) Glavnoye upravleniye trudovykh rezervov. Uchabna-metodichenkoye upravlentye. (Petroleum engineering-Study and teaching) LOMM, Ivan Favlovich; PLOFNIKOV, A X do; KHLOBCRDOVq Mop takhn.red, - [The azure shore of the Caucasuej Lazurnyi bereg Kavkaza, Krasnodar. Irasnodarskoe knizhnoe izd-vo, 1959, 243 pe (MIRA 14:1) (Black Sea region--Guidebooks) SHNV"YAKOV, lev Dmitriyevich, 1889- , akademik; BUCHNEV, V.K.. redaktor; PLOTVIKOV. A.M., redaktor. [mining mineral deposits] Razrabotka mostorozhdenil polaza7kh iskopaemykh. Izd. 2., isprJ dop. Moskva, Ugletekhizdat, 1953. 756 p. NLRA 7:3) (Mining engineering) PLOTNIKOV, A. M. 7609 PLOTNIXOV.,-A. M. Oborudvaniye uchabnogo kabineta gornogo dela v gornoproLVah- lennykh shkolakh. (Rukovodetvo ) Soot. A. M. Flotnikov, M., Trudreze"Wat, 1955, 43 a. 9 ill. 22 an. (Glav. upr. trud. rezervov pri Sovete Ministrov SSSR. Ucheb - metod upr.) 1.000 ekz. Bespi - Na. obl. soot. no ukazan (55-3595 371.65:622 4 331-861 371e*6 SOt Knizhnaya I&Toipis, Vol. 7, 1955 PIMIKff, A.M.; POIMOVUIT. N.M.. redaktor; SLOVOROSDT, A.U., redaktor; takhnichookly rodaktor. [maker of preparatory excavations] Prokhodoblk pedgetevitellufth Tyrabotek. Moskva, Ugletekhtsdat, i954.-3o6 P. (MLRA 7:8) - (Tunnallng) L 42122-66 F',T(1)/'_:J7 (m)/'~/7_ r'T (t)/7-TI IIJP(c) Acc kR~_AP602WT-SOURCE CODE. JD/GG/AT /008/007/1981/1984 AUTM: Akischeako, I.P.; Vavllov, V.S.; Plotnikqv,,A P ORC:__-,Physica Institute In. P. N. Lebedev, AN SSSR, Moscow (FixicheakLy institut-nAW, SSSR).' TITLE: Photoconduc~fvitj spectra of oxygen-alloyed gernaniu~'crystals 1rrmd1m1=*._Wft fast electrons SOURCE: Fiz~ka tverdogo tela, v. 8, no. 7, 1966, 1981-1984 TOPIC TAGS: photoconductivity ,,spectrum, germanium single crystal, fmolft*1ectrow, eiwnmm~lrradiatlon, crystal impurity, oxygen AmpnmkftL ABSTRACT: In addition to electrically active impurities, germanium crystals also-con~- 4 tain neutral Impurities, specifically oxygen, the concentration of which In normal . I "I lol6cm-3. crystals say reach it is not excluded that associations of point-contact de- fects with oxygen stow may appear in Ge crystals upon irradiation. The authors were unable to determine the oxygen concentration in normal crystals In an absorption band at a wavelength of 11.6p. At their reqVest, the S iconductor Department of MCU (Kafedra poluprovodnikov MGU) grew an"bxygen-alloyed germanium crystal. The crystal was subjected to dilation'in an oxygen ati&iphere with noncontrolled pressure. The single crystal obtained has n-type electroconductivity and a resistivity from 2 to 10 ohm-ca. On the basis of the investigations performed, the authors conclude that the al mn M amMl-&W L 4212--z-66 HAt AP6024453 level EC-0.09 ev belongs to the association of the oxygen &too with a point-contact defect, the association appears only as a result of irradiation at room temperature, and it is analogous to the A-center in silicon. Germanium of the n-type, alloyed with oxygen to a concentration of 5.1017 cm7,3, proved to be more radiation stable than n- type material with the same resistivity, but with a considerably lower oxyg n concen- tration. Specimens of n-type Ge with an oxygen concentration of %5-1017 cu-; do not change their type of conductivity upon irradiation by a flux up to 6.1018 CU72, and the lifetime starts to decrease only after irradiation with a flux on the order of 1018 cm-2. The authors express their deep gratitude to M. D. Tyapklw for providing the oxygen-alloyed crystal. Orig. art. has: 4 tligurei-.- [261 SUB COM 20/ SUN DATE z 02Aug65/ ORIG MIT: 0021 OTH REF: 003 / ATD PRESS: SV 4-3 Calrd 2/2/,~ PLOTITIKOV, A. S. Model of the motion of an artificial satellite. Fiz. v shkole 23 no.5:69-70 s-o 163. (MIRA 17:1) 1. Pedagogicheakiy institut, g. Shuya Ivanovskoy oblasti. lr,,L ~, -,7/,; / /.,- (. /, /7 ~r, G.14-i J - - 7 - - u. r..Il .3 1 * IJ 7, ; . . ; L,-oncnic regions n1' Kazalbistan. Test. AN gazakh. :'M "~' (tr - . % .. at~ I r!; *~ / nc,.3:68-73 Py 157. (Flata*la Lan- Ae 3graphy, lkoriomic) PWTHIKDV. -A.V. Construction industry of Kazakhstan in the aeven-7ear plan, 1959-1965. I2v.AN Xazakb.SSR.Ser.ekon., filos.1 prava no.2: 14-21 159. (MIRA 13:4) (Kazakhstan--Construction industry) AixkKSEYEV, G.M.,-_PLOTNIKOV, A.Y.- CHUGAY, A.M. lk Xconomic regions of so.uthvru.Xazakhatan. Test- AN Kazakh- SSR 13 no.4:64-72 Ap 157. (KLRA 10:6) (Xazakhatan--Geography, Zconomic) 21,OTNIKOV, A.Ya.; GIEWOV, V.I.; LABUSOVAJ, A.I.; BOGAYEVSKAYA, R.F. UOIAIOn of tall oil br Qo separation method. Gidrolls, i lauokhim. prom* 16 no.1:21-23 163. (MRA 16:2) 1. TSentrallnyy nauchm-iseledovatellskiy i proyektnyy institut lesokbimichwkoy promyablennosti (for Flotnikov., Gnesdoy.. Labusova). 2. VsesOyuzz3yy nauchno-issledovatellskiy i konatruktorski ihatitut khiniicheskogo mashinostroyeniya '(for Bogayevskaydf. (Tall oil) PIZT:I,K,~V, A. YA. 1% TJ- l-'El'-'lA"-!, DAIN 0/4) -3,55-23 1949 PLOTNIKOV A.,Ya - Gll,-!ZDC,;V 11 1 . ~T NOVIYEVA, -L-,V. -- '*.I , .. ., ~j~ 11 Using the flotation meLhod for the recovexy of ta]_l C,4.'j. - ~. C -.1 ~ ~. 7,. j i lesokbim.proin. 15 no.1:7-9 162. (M--,!',A 38:3) 1. TSentrallnyy nauchno--.Lssledovatellqkiy lesokhimicheskiy institut. .--roduc tion and use r, thyl, - J TIV--.~;aclt S C~ the flotation of a pati te-n~-Fh a I InE~ cr-.-. 'J'i-Jrcl J i 17 no.5:12-1'2, 164. 1. Tgentrallnyy nauchno-is~-I.edc.-Jatul --~-Jv stitut. KUWVATOVA, M.A.; PLOTNIKOV, A.Ya. Productiori of phy-tosterol from willow pitch. Gidroliz.i losokhim.prom. 15 no.61lo-11 162. (MIRA 15:9) 1. TSentrallnyy nauchno-issladovatellsk:iy i proyektnyy institut lesokbimicheakoy promyshlennosti. (Sterol) GURICH) N.A.; LISOV, V,I,; YIMIKOV, L-Ya-;-KOMSIIILOV, N.F.; VOIMB',YEVAJ, Ye.Ya.; RAIETOV, A.E.; FEETRONIO, V.1% Butts of pine logs is a valuable raw material. Bum. prom. 36 no.10:16 0 161. (M IRA 15: 1) 1. TSentral"nTj muchno-issledovatel'skiy lesokhimicheskiy inatitut, (for Gurich, Lioov,, Plotnikov). 2, Karallskiy filial A14 SSSR Uor Komshilm). 3. Segezhnkiy, kombinat (for Voroblyoval Baletov, Petronio), (Pine) (Gums and resins) PLOTNIKOV., A. Ye., Engineer "Analysis of the Processes in Altitude Installations for Testing fiviation Engines." Sub 19 Jun 1+7,, Central Sci Res Inst of fiircraft Engine Building Jmeni P. I. Baranov Dissertations presented for degrees in science and engineerin-g in Moscow in 10,47o SO: Sum-Vo- 457., 18 -Apr 15,5 PLG-T.N7KCV, A. Ye., Eng. Cand. Toch. ')d. ; .5 f ~r 'T'C~ ;,no 1 -1- Dicsertation.: "Iralysj s of -"-1e Proces-se.- in Pititude Tirste Un 4-,-'- ' c - ' - %, - - . , - . ~ - I ~ j ~;;'. - , ~ , .' - . . 7 Aviation Engines.!' Central Sel. Pes Inst of Aircraft Enr7inr.- ~ 1 7'- - 19 Jun 477 . SO: Vechernyaya Moskya, Jun, 1947 (Project 1#17S36) PLOTNIKOV, A.Ye., kand.tekhn.nauk; SAZONKIN, V.V., inzh. Operational efficiency of the turbine of an air refrigerating plant. Khol. tekb. 38 no.4:14-18 J1-Ag 161. 041RA 15:1) (Turbines) (Refrigeration and refrigerating machinery) PIXMOV, A.Ye.,, aspirant- I- -, , ~ ~ ~ Plastics in the manufacture of sewing machines. Nauch. trud.T 14rILP no,24:194-197 162, (14M 16:7) 1. Kafedra. mashin i apparatov legkoy promyshlennosti Moskovskogc tekhnologicheskogo instituta legkoy promyshlennosti. (Plastics) (Sewing machines) DAMKIN$ B.I. (Moskva); nDMKOV, A.Ye. (Moskva); LEM, V.I. (Moskva) ... Torsional vibrations of the main shaft of the 22-AClass PMZ seving machine with siuplified needle and thread-pulling sechanismo, Shveine pron. i2o*4:16-18 JI-Ag 162* (MIRA 16t6) (Sewing machines-Vibration) PLOTNIKOV., A.Ya., kand.takhn.nauk Design layout of air refri-;-Yerating machines. Khol.takh. 39 no.4:27- 33 JI-Ag 162. (YJRA 17:2) PLOTNIKOV, A.Ye. (Podol*sk) Use of plastics in the manufacture of sewing machine parts. Shvein. prom. no.5:21.-26 3-0 163. (MBU 16: 12) PLOTNIKOV, A.Ye. Using plastics in the manufacture of sewing machines. B-;u-!.t,--.kh.- skon. infom. Gos.nauch.-issl. ins t.nauch. i tekh.infor-m 17 no.11:64~- 66 N 164, -- (MIRA 18:3) PLOVIKOV, A. Ye. Molds for plastic articles. Biul- tekh.--ekon. infor-m. Goa. nauch.-issl, inst. nauch. i tekh. inform. 18 no. 12t16-18 D 165. (MIRA 19-1) PLOTNIKOV, A.Ye. ~- - '. v - __ - , - ~. Plastics production in Japan. Plast. massy no.2:65 165, (MIRA 18:4) 1. PLOTNIKOV, A. Z. 2. USSR (600) 4. Oak 7. Some observations of planting acorns in clumps. Les i steul 5 No. 3, 1953. 9. Monthl List of Russian Accessions, Library of Congress, April 1953, Uncl. Vwle* I v CT" is it 12 IS 3. b 76 0 a 0 0; of TZI I I tl co ~ .1 Un C 0 U G 08 IR L 4 k 0PU 4 1 T IN __t. V A t: 00 .,ql jjuj!jju! -to i -lot -d Lt6l -1 pull, IJV,) Pug "OlPtitold 'U (,uuiwnH ul) -Mj(X 00 if PUw '4110 w-MIMJV mnulumlV ps %pmvw4trA,,j 1H. 00, 60- 90- 57 4 1 r 7__'1 1 3,7, -1 42 n 14 vi r, I f A t -i .1 I; ILI (I 'w Iq U n se U it it f1pelf Itirmll I'll "0 " 11 h 0000 BCR(NK(N-, L.; PLOTNIKOV, B. Use keyless couplings for the propeller shaftorof rivercraft. Rech. transp. 24 no. 10:36-371 165, 1. Glavnyy konstruktor GorIkovskogo tsentrallnogo konstruk- torakogo byuro Ministerstva rechnogo flota SSSR (for Borovkov). 2. Starshly inzhener GorIkovskogo tsentrallnogo konstruktorskogw-~'. byuro Miniaterstva rechnogo flota SSSR (for Plotnikov). ,:~ 0 V Z, --, /o/ I /, 1; //, LISTBW , H.D.,inth.; PURNIKOV, B.B.,inzh. (Ynroslavl') -, Re,pniring bridges and culverts. Put' i Dut. khoz. no.4:20-21 AD 158. (MIRA i1:4) (Railroad bridges--Knintenance and repair) (Culverts-Raintenance and repair) -. S'.5 J- 0 6.. P lushener; USSMUSKIT, Y.N., inshener. LMKAN, N.D., inshener;,~ Bridge beams of composite arose section. Pat' i put.khos. no.6:35 Je 157. (KWA 10: 7) (Girders) (1~:"-RA !8,9) . .............. RAMKOV. F.:-2IDTIUjOV _P. - TTOVA, k., , LOGUNDV, N.; BTRDINk, A., red.; FKDO tekhn.red. [Hunting. fur farming, and dog brooding] Okhota, zverovodstvo i sobakovodstvo. Moslcva. Goa. izd-vo sellkhos. lit-ry, 1958. 91 P- (Fur farming) (Dogs) (Hunting) "k, . I .. PLOTNIKOV D. There where taiga forests once rustled. &w.shakcht. 10 no.8,-16 Ag 1610 (MM 14:8) (Kuzuet8k Basin--4oal mines and mining) RMOV, r.; PURNIKOV, D., starshiy ekskursovod. "Hunting and fur farming" pavilion. Nauka I pared. op. v sellkhoz. 8 no.8.:30-33-Ag '58. (MIRA 11:10) I.Direktor pavillona "Okhota i zvorovodstvo," Vessoy=naya sel'sko- khozyaystvannaya vystavkEL (for Plotnikov). 2. Pavillon "Okhota i zvorovodet" Voesoymnaya sellskokhocyayrtTennaya vyotavka (for Plotnikov). (Roscov-Pur farming-fthibitions) . PLOTNIXUV. D.. Viol og-okhot awed Hanting with a camera. Soy. foto IS no. 7:50 Jl 158. (MIRA 11:8) 1. Starahly okskurnovod pavillona 60khota i sverovodntvog Yeamoyuznoy seliskokhozyaystyeanoy vystavki. (Nature photography) j_nZj~. - S'JIT JT~A- , RODOV, G,S,,, -kand.tekhn.n&-A; PIL.IYENKO, VK,,, 1 -1 -'NIKOVSK-TY, inzh.i.-E~ljRNj,- ~J~,-~,-zh, Improving the technology of manufacturing prestressed reinforced beams on the TsKB extended stand, Trudy Zap.-Sib.fil.ASI.A nc,30.20-131 160, (MIRA 15-2) (Girdere) PLOTNIKOV, G., svinarl-mekhanizator, delegat XII s"yezda, professionallnyirh _" _*~~fdyffmv School on a farm. Sov. profsoiuzy 19 no.13:14-15 Jl 163. ()URA 16:9) 1. Sovkhoz "Proletarskaya diktatura", Rostovskaya obl. (Rostov Province-Agricultural workers-Education and training) (Swine--Feeding and feeds) FLOTNIKM G akhauizator-svinarl I cultivate corn and fatten pigo. Sell.mekh. w.3:12-34 162.. (MIRL 15 -.3) 1, Hyasnikovskiy rayon, Rostovskaya oblast'. (swine) (corn (MELize)) VERKHOVSKII, A.V., prof.; GLYAVIN, Yu.V.., dots.; LUPATIOVA, O.K., dots.; YDKEYEV, I.I.p dots.; USPMSKAYA, A.N., dots.; POIIOF,ARF'V,- M.G., dots.; C'MYSHIUKOV, K.A. , st. prepod.; AiUNOVICH, V.M., assistant; PLOTNIKOV, G.I., assistant; PELEVINA Jq T.I., red. (Handbook for the solution of problems on the strength of materials] Posobie k resheniiu zadach po soprotivleniiu materialov. Volgo-Viatskoe knizhnoe izd-vo, 1965. 319 P. (MEU 19: 1) 1. Gorki. Politekhnichesk" y institut. 2. Kafedra "Sopro- tivleniye materialov" GorIkovskogo politekhnicheskogo in- stituta (for all except Pelevina). TANANYKIN, N.I.;,FLOTNIKOVt G.S. P~roblem of urethrovenoua reflux. Urologiia 25 no#2:34~39 Hr-4 f60, (MIRA 13sl2) (CMnWT MEDIA) (GENITOURINARY SYSTR4.-RADIOGR=) I REZNIKOV, V.M.;_,P,LOTIIIKOV, G.S.; KHOLIKIN, Yu.1. Balance sheet of turpentine in furfurole production. Trudy Sib.tekh.inst. no.23:74-75 159. (Y-MA 14:4 (Puraldebyde) (Turpentine) RESNIKOV, V.M.j KHOLIKIN, Yu.I.; PIDTNIKOV, G ------ -I,----- __.: S_ Analysis of the products and b-;-products of tb~ furfurole manufacture at hydrolysis alcbhol plants. Trudy Sib.tekh.. inst. no.23:33-37 159. (MIRIA 14:4) (Furaldehyde) (Hydrolysis) (Wood--Chemistr~) POPOVIGHP k. (Pt.Ki-mer, Udmurtskaya ASSR); PLOTNIKOV, I. Rem~lutions of the Novembea; Plea of the Central Comittee of the CPSU inspire now labor'victories; commmist labor at grain recieving enterprises. Muk.-elev,prom. 29 no.10-7 Ja 163. (KM 164) 1. Vostochno-Jazakhstanskoye upravleniye khleboproduktor (for Plotnikov). (Grain elevators) PWTNZOV. I. FI&nnIng the Raw agricultural re0on in Moscow Province. Sell.stroi. 15 no.6:22 JS 160. (MINA 13: 8) 1. GlavrWy inzhener masterAwy proyektirovanlys sel'skogo stroltalletya Institute, "Nosoblproyakt.m (Ram District--Regional planning) is -1 id 0) to 41 W Is sit If a as is is 17 14A 0 1- u iI W 11 k Il M h 4 1 A A- L-J A -A.-J-A j. ~l a AA 0 1.1, 90 It AT 00 00 .1 SMOst4a.uo 4UU464. I. IL4W. -4.1t.0 t V..lswk-ll P&A ~ee 66, w4u. shown w) duvernvum, OrdutAry purt-ha"We eakmwl. hoorm. -00 " the u4r; 111st'rmcs a t'right on "e-ftd- 0 Ilifference arc Sugg"ted livuljwk : 0 0 0 =00 so 00 tzo 0 so -so as so As r. Zoo As =*0 LITtRAII'llf CtilillICA11C. zoo ~O 1*0 F 1 - -- -- l ro 4 I u 0 4v U3 A- ( a it 01 11 of et tc 11 S 5d 0 -9 a I w IN I 9j 13 i4 ll AI ~ , n' j Ill to It 4 0 0 0 0 04 0 0 0 0 0 0 0 & 6 0 o 0 o 0 ,1 'O j : 0 0 0 0 0 0 0 0 0 6 0 6 0 a 9 0 0 0 0 1 : : 0 0006.0 0 Go 00000 0 a 0000 0 .4 0 a 4 0 0 so** 060060 0 0 *. 0 0 16 0 0 0 0 a 6 a 0 is ~,,Ws 0 -* moo L! it 1411 UV U ' hl V I-' A C a A to p v I, J! -A 1, - I AA 0 LL IV LL t 1 0 P-1 A 0 A I a . ., 00 . al"d l&"11 (of "4410 leathat. 1, J'J .06 oLjMLUV awl A. KIkolnutov. a P1`01111- S. S- S. R. 13, 217-2111SK14I.-Anumis a great ~Arsvl lot t"Illmloo. "Uh aa incial miard r Alunla iltud VvIclatolit. slucii. nitru wiltil., rte.. IrOrd Its ~ -00 as till- jullikocol milmlitututil 141-ticii fill saddir Ival h,-I, till w. multud mul mot,11101 slovs give like loarsit torwiloo. Iliv ;-Oo Almigth and tile clailticity tit the lushouitute mn lw trAll- tAted by the &sut. of the gluing sulistamv and the m). oil f! 14YATS tit tile Work- i o unchanging rhwicuy at vlevat!A and how trium. &l d a ' zoo tars"i'laurr than willoariltilm vanItcelli l- It,, Ill c, ,u, i , llf ub I m z A .1 vo al watymg ul 's... in- C411 I-C 161.61ned toy umjl;tcvIIuio;.- till wr dil') ful.1,,ct - *a loop Ia) t-[,. A. A. 11twhifitiml-, ja to 00 a a: 31 a j a. s t a OII ALLVV~ ~AL ~JTTIIATOF CLAtiffiC.Tic. Q.- 11, ire -.~~7 A o l U a A I -) d v IN It ott it IR t, tt f 5 Al n I 0 0 o 0 0 a 0 0 0 0 0 0 ; a g a q s 0 a 0 a 0 0 e 0 0 0 0 a : : 0 0 a a 0 0 0 0 0 :a ' IQ it 11 is u Is Id 11 m it m 11 zi a 14 35 it IF A 21 x 11 v 11 m 15 m 1; u jv C 41 u 4) 41 Eq .1p IWI O.Lmf.s P176 -d 16 1411111~ "S"Ofiag ad, radiant heaL I -00 100MU.-In radiography by numm of red or rays with-~Y-commer" thickmems of materW there is often tfmbkixm scaturing- -00 this 6 conAlered to be cmnccw with rtvaWbk- trandornta6ws In crmipk-x rs"A4 .00 rhe perwic vasiatko In the Kattering W nrar ultra."Art sudiatim I.IlIT "At", 00 mlast 04" etc. In &No tlewfil*41. it ti, 141, Go 06 Ls 0 1,0 0 60 ~410 0 ve 0 -ze 0 "0e Ij1 woo U A 0 tift"Com an an Kati it 4 14 +00-91.6" 09.' 6 9 4 0 0 IS 0 0 a 0 0 0 000 so 0 Is a e o 0 -40 11 14bIt 1. 14 A, d 112 ith25 AA L 9 L-1 GL -P--,L1 0 A* 0 *x s"a am by altra-vicM mad jahs-red Tay&, -Au ill u t t d d s T& r esaiption it givell-t-raffanii5writs for w-kins with the ultra-viaki for ou(WrKeme jjhotopaphy . and with the htfrx-md fw at ill wkkh &rv &jkjI light fillin, ric'. imn I, to t* examd. If. R, Illn.8.4wx 90 a: ~ og a. 00 cp 0 00 0 A0 ..00 ow t -sinAv R U 0 0 0 0 0 All 0 0 0 0 0 6 0 0 0 0 0 0 0 0 0 1 0 4 a * 0 * to a 04 0 & 0 0 0 0 0 0 0 0 l BAKUNIN, A.V., doteent, kand, istorichookikh nauk; DOLGINTSEV, GA, dotsent, kand. istoricheakikh naukl PANFILOV, A.F., dotmentp kand. iskunstv. na&;_FIOTNIKOV, I.F., dotisent, kand. Istorichaskikh nauk PWTNIKOV,, I.F., inzh. (st.Krasnyy Liman) New methods of highly efficient utilization of electric locomotives. Zhel. dor. transp. 46 no.5t6g-71 My 164. (MIRA 18:2) 25(l) PHASE I BOOK EXPLOITATION SOV/1752 __ZjgtnjXqx,_jykn Mikhaylovich, Valerlyan Nikitich Razumov, Valentina Ivan6vi_a__0Fo_r_M&, Murshida Sallmovna Razumova, Nikolay Vladimirovich Kuznetsov, and Aleksey Nikiforovich Koryakov Potochnoye lzgotovleniye obolochkovykh form (Assembly Line Manu- facture of Shell Molds) MOSCOW, Mashgiz, 1957. 42 P. (Series: Obmen tekhnicheskim opytom) 4,000 copies printed. Reviewer: L.M. Volpyanskiy, Engineer; Tech. Ed.: G.A. Sarafannikova; Rxecutive,Rd. (Ural-Siberian Division, MashgIz): M.A. Bezukladnikov, Engineer. PURPOSE: This book is Intended for engineering workers In foundry shops and design establishments concerned with the development of industrial molding methods. COVERAGE: This book reports on exterience gained by the mixed crews of the-Uralkhimmashzavod Ural Chemical Machinery Plant) and'the Sverdlovsk branch of the NIIKhIMMASS (Scientific Card 1/3 Assembly Line Manufacture of Shell Molds SOV/1752 Research Institute of Chemical Machinery),in organizing mechanized mass production of large shell molds from blends containing water glass. It deals specifically with production of molds for casting large filter press frames and plates (62 to-215 kg.and 1350 x 900 mm. and 1720 x 1080 mm.). The author also describes construction of equipment used in the above process. No personalities are mentioned. There are 14 Soviet references. TABLE OF CONTENTS: Preface Mold Mixtures With Water Glass 3 5 Determining Basic Factors of the Method of Making Shell- Molds For Casting Filter Press Frames and Plates 10 Industrial Experimentation and Application of Mass Production of Filter Press Casting 20 Card 2/3 I Assembly Line Manufacture of Shell Molds SOV/1752 Conclusion Appendix Bibliography AVAILABLE: Library of Congress 00/imr 6-22-59 Card 3/3 36 38 42 PIOTNIKOV, I. M., Eng. "The Role of the Plant laboratory in Modernizing Machines and Equipment" p. 284-289 in book Increastug the quality and Efficiency of Machinery, MDacow, Masbgiz, 1957, 626pp. YESIN, O.A.; POPELI, S.I.; 13RATCHIKOV. S.G.; RAZMGV, V.H.; PLOTNI T I.M. IMEWNFLO." Desulfurization of steel in Induction furnaces with the aid of direct current. Zhur.prikl.khtm- 31 no-12:1837-1842 D '58. (MMA 12:2) (Steel-Metallurg7) (Desulfuration) Yte 04 x 63i 43t d 4 Ptio a & 2M. P'=kkd~m Z P 31CS. ::u W X I inra., were anodind ia 11150" 192, g.111., m 1&-30* with C.d. 1-3 amp./sq. ilm. The ut. of tht phile increased wltb the duratlan I of anodization and pas~rd through a rouncittl trM. at 1. and then decreased, The best films wen ot~ Ward up to which also coffespouded with h Mcknesa lb. - - -- -- - - -.193 I tin la thi CA; I PIARNIKOL-49.1 inzh.; RAZUMOV, V.N., kand.tekhn.nauk; OBORINA, V.I., inzh.; RAZUMOVA, M.S., inzh.; KORTAKOV, A.N., inzh.; MJZNETSOV, N.Y., inzh. Making shall molds for frames and plates of filter presses. Mashinostroitell no-10:17-19 0 '57. (MIRA 10:11) (Shell molding (Founding)) (Filter presses) M P,LOTIIIKOV, I.M., YESIN, O.A., POPEL, S.I., BRMCHIKOV, S.G., MMIN, V.1M. ------------------------- 1, "Electrochemical Desulphurization of Steel in Induction Furnace," lecture given at the Fourth Conference on Steelmaking, A.A. Baikov Institute of Matallurgy, Moscwo, July 1-6, 1957 PIDTIIIKDV, Ivan Mikhaylovich; FUZUMOV, Valerlyan Nikitich; OBORINA. ~~novns; RAZUMOVA, Nurshida Selimovue; KUZIM?SOVo Nikolay Vladimirovich; KORYAKOV, Alekser Hikiforovich; VOUIYANSKIY, L.K.. inzh., retsenzent; SARAFAMIIKOYA. G.A., tekhn.re&. [Assembly line monufactura of shell formal Potochnoe ingotovlenie obolochkovykh form. Moskva. Gos. nauchno-telrhn. izd-vo mashino- stroit. lit-r7. 1957. 42 p. (MIRA 11:5) (Shell molding (Founding)) 1 --65' EWG F WG"a)/!WG(c) Fe-5 DD ACCESSION NR: AT 4045946 S/3111/63/062/00/0034/0036 UTHOR:- V. -1 i, Ps A "TiTLE'.--: 861 115to~drdiO900,111 Cstudies-during the adaptation period under alpine so~hm Dushanbe. Go5udarstvenny'r meditsInskly institut. Trudy*, v. 62, 1963. Voprosy* fiziologii i patologil vy*sokogorlya; trudy* nauchnoy konferentsil, 1962 (Problems )f the physioloqy and patbolo of Inp ri-niftn%; transactions of t~e J-962-s-cTe-n-trTlc -conferenceY. 34-36 TOPIC TAGS: high altitude, hypoxia, ballistocardiography, adaptation, cardiac function, ventricular contraction bbli-istbr-ardiographic-'s'tudi-et:in ABSTRACT: Rep6at6d. 28 normal subjects (before their ascent Into the Pamirs, during a 97-day stay at an altitude of 14200 m, and 6 and 23 weeks after their return to the valley) showed a gradual increase in heart rate and In the strength of cardiac contraction during the period of adapta- tion to high altitude. During the first week at 4200 m, the R-H, H-1 and H-K intervals all decreased sharply, with a maxim, I decrease appearing between the 6th and 9th week; the HI/IJ ratio Increased from 49% to 56.2% during the first Card --1/2 PLOTNIKOV, I.P. - 1. Electrocardiographic observations at an altitude of 4200 m among the participants of a high-mountain expedition. .Zdrav. Tadzh. 10 noi,3:3-6 163. (MIRA 17:4) 1. Iz Instituta krayevoy meditsiny AN Tadzhikskoy SSR. PIDDMOVO I.P. (Dushanbe) "increase in the force of ejection of blood by the heart?. Report presented at the Scientific Conference devoted to the problems of physiology and pathology in High Altitudes., Ministry of Health Tadzhik SSR and Medical Institute im. Abdul' Ibn-Sino,, held in Dushanbe., October 1962. (Zch-avookhraneniye Tadzhikstana., Dushanbe, No. 3., 1963, P. 37-39) PLO1111TIKOVY i.11. during. -Lhe a-.iaVtLL.Ion ins!'. t-~ ( i - 17 : 12 1. Tad,-Iilksk:,y --dltodn~?Jy i,.nqtltit imeni jhril Sino, D-uph- be. PLOTNIKOVY I.F. ant, higb Comparative indices frcm ballistocardiograms of inhabit- ~s of mountain and valley regions of Tajikistan, Zdrav. Tadzh. 8 no,5:36- 38 S-0 161. (14IRI 15:1) 1. Iz kJAnicheskogo otdeleniya (zaveduyushchiy .. doktor med.nauk prof. Kh.Kh.,Mansurov) Instituts, meditsiny AN Tadzhikskoy SO. (TAJIKISTA14--BALLISTOCAliDIOGIUPIE) (ALTITUDE, INFLULNGE OF)