SCIENTIFIC ABSTRACT PAVLOV, P. V. - PAVLOV, S.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001239620007-1
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: January 3, 2017
• Document Release Date: August 1, 2000
• Sequence Number: 7
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

PAVIDY, P.V.: IXONOVA, A.G.
Stnbilization of dephtherial toxin "'or the Schick test. Zhur.
mikrobiol.8Did. i immun.2c) no.3:106-111 Hr 158. (MIRA 11:4)
1. 12 Institutn opidemiologii t m1kroblologli imeni Gamplei AMN SSSR.
(DIPHTHERIA, immunolof7,
Schick test, stabili2Ation of toxin (Rus)

t.
PAVLOV, P.V., AKIMOVA, V.V., PEMYAIWVICE, A.N.
Purified adsorbed scarlet fever toxin. Report No.2: Idaorption of
purified scarlet fever toxin. Zhur. mikrobiol. epid. i immun.
29 no.9:8-10 S158 (MIRA 11:10)
1. Iz Instituta epidemiologii i mikrobiologii imeni Gamalei JOIN SSSB.
(STREPTOCOOGUS,
senrlatinae, toxin purification (Rua))

FAV1OV' F.V.2 MITELIHAN. S.L., AKIMOVA. V.V.
Purified adsorbed scarlet fever toxin. Report FO-3:Result of,
active immunization against scarlet fever with purified adsorbed
scarlet fever toxine' Zhur.mikyobiol* epid. I Immun. 29 no.9:11-15
S 158 (MIRA 11:10)
1. 1z Instituta epidemiologii i mikrobiologii imenj GAmnlel AMR
SSSR.
(SCARUT FEVER, prev. & control,
vace. with Durif led adsorbed toxin (Run))

PAVLW, P. 7. ; !41T23, 1!0,11, . L. ; ANIMOVA, 1. V.
"Problems of active immunization against scarlet."
0
I q V .2 ,
Report submitted at the 13th All-Union Gongress of Hygenists,
Epideriologists and Infectionists. 1959

ZHWOV, V.M., red.; VASHKOV, V.I.. red.; ZaHAROVA, H.S., red.;
JaMMY9 D.G.0 red,;_PAYWY,__P_Y,, red*; RUDNffV# G.P., red.
(Moskva); TIMAKOV, V.D.. red. (Koskvs); TROITSKIY. VA., red.;
1HRISTOY, L.B.. red. (Moskva); NECRAYRY, S.V., red.;
AMICHIKOVA, TV.S., tekhn.red.
ITranasetions of the All-Union Conference of Hygienists. Npidemio-
logists. Microbiologists, and Infections Disease Specialists]
Doklady XIII Veasoiuznogo slesda gigienistov, opidemiologov, mikro-
biologov I infektalonistov. Pod red. V.M.Zhdanove. Roskvs, Goa.
isd-vo ned.lit-ry Redgiz. Vol.2. Lsection on epidemiology, micro-
biology, infectious diseases, and the organization of the public
health systenj Otdelents opidemiologii, mikrobiologii, infektaton-
nykh bole2nel I organizateil zdrevookhreneniia. Pod red. V.I.
Vasbkova. 1959. 866 p. (xM 14:1)
1. Vaesoyasnyy s8ye2d giglyanistoy, epidemiologov, mikrobiologov
i infektsionistov. 13th.
(EPIDEMIOLOGY--COJ1GRBSSBSJ

PAVLOV, P.V.; AKDIUVA, V.V.; APAIWIlMiNNKO, N.I.; ATSRHOVA, I.S.
gxporimofit~al atudies on antigenic and irrrLnogenic propeertles
of combined vaccines appinat scarlet fever, diphtheria, aixi
whooping coixgh. Zhur.mikrobiol.epid. i irxmin. 30 no-5:42-48
Hy '59- (MIRA 12:9)
1. Iz Instituts epidomiologil I m1krobiologii imoni Gumalei
A14N SSSR.
(VACCINES AIM VACCINATION,
scarlet fever-di-ohtheria-whouping cough
vaccine, animal taste (Rua))
(SCARIXT FEVER, irwmmol.
same)
(WHOOPING COUGH in-ninol.
same )
(DIPUTHERIA,
JmTmmol.
same)

LMONDVA, A.G.; PAVLOV. P.V.
Use of tho method of precipitation in apAr In the selection of
toxigenic variants of strain FWS; nnthorle abatrart. Zhtir.
nlkroblol.elild. t Immun. )0 no.5:88-89 Hy 15(). OURA 12:9)
1. Iz Institute, opidemiologii I nikrobiologii ineul Garlalpi
AM SSLRI.
(DIPHTIMARIA)

STEPANCHINOX-RUDNIK, G.I.; UMOTINOVA, Ye.l.; BLAGOVISHCHhNSKIT, V.A.;
PAVLOV, P.T.
Wfect of ultrasonic vaves on diphteria toxin; author's abstract.
Zhur.mikrobiol epid I immun. 30 no.11:118-119 N 159. (KrRA 13:3)
(DIPHTii;iZ (;;XINS AND ANTITOXINS)
(ULTRASONIC WAVBS--PHYSIOLOGICAL RMCT)

-FAVWV9 F.yt) AKMVAt V.V.
Precipitation in gal with scarlet fever toxin. Zhur. mi-krobiol.
epid, i iwmz, 31 no. 1009-44 0 160* (MIRA 13:12)
I# Is Otdola profilaktiki detskikh infektsiy Instituts epidemiologil
i mikrobiologii izzieni Glawlei ANN SSSR.
(SCARLET A
.j

PAVLOV F.V.; LEONOVA, A.G.
Determination of the optimal antigen dose for active i-minizaticn.
Report No.Iz Determination of the oTtimall dose of native diphtheria!
anataxin. Zhur. mikrobiol., epid. i immun. 32 no.9:8-12 .0, 161.
(MIAA 15:2)
1. Iz Insti uta, epidemiologii i mikrobiologii imoni Gamalei A10 SSSR.
MPHT1 UIUA) (TOXM AND ANTITOKIINS)

FAVLOV P V.; IMOVA, A.G.
Effect of the products of protein'splitting in a culture mediu=
on tomin formation. Report No.2: Antigenic and immmogenic
properties of diphtheria toxins (tozoids) obtained on a medium,
digested by two enzymesi during culture of the Weisensee strain.
Zhu.mikrobiol.epid.i i=mm. 32 no.105-99~J-a 161. (MIFA 14:6)
1. Institute. epidemiologii i mikrobiologii Imeni Gamalej AMN SSSR.
(CORMBACTERIM', DIPHTHMW) (TOUNS AND ANTITOXIM
(TRYPSIN) (PROTBIWE)

SONOIDV., Mikhall Ignatlyev!Lcb;IA)g&y,-Eetr-Xa"yov-lvh,--FETERSDN, O.P.,
red.; BALDBA, N.Y.,, tekhn. red.
[Manual on the use of vaccines and eeral Spravochnik po primne-
nHu vaktsin i syvorotok. Moskva, Fledgizj, 1961. 162 pe
(MIRA 15:2)
1
(VACCINATION-HMBOOKS, MWALS, ETC.)

FAVLOV..,_f,,Y.j NEKHOTENOVA, ye.j.; LEONOVA, A,G.; APANASHCHENKO, N. I.;
FRfUlln- ICH, A.N.
Production of diphtheria toxi-n under conditions of eubnerged cul-
tures. Hauch. osn. proizv. bakt. prop. 10:71-76 161. (MIRA 18:7)
1. Institut epidemiologii I m1krobiolcgii im. Gamalei AMN SSSR.

PAVUT, P.V. , MITELIMAN, S.L.; AKYOVA, V.V.
FT(,paratlom for active imunization agairst scarlet fever. Ftau,-L.
oan, proizv. bakt. PrOP. 10:129-134 #61. (MIRA 18:7)
1. Inotitut opidemiclogil i mikrobiologii im. Gamalel. k%ffI SSSR.

PAVLOV, PetrpVARL11yevich; USPENSKIY, V.I., red.; FICNINA, N,D.,
I tevin. MIT-
[Active immunization against scarlet fever) Aktivnaia im-
munishtsiis prot1v skarlatiny. Moskva, Medgiz, 1%3. 217p.
OGRA 16:9)
(SCARLET FEVER--PREVENTIVE INOCULATION)

PAVLOV, P.V.; LEONOVA, A.G.
Determination or optiam doses of antigens used for active
immunization. Report No.21 Determination of the optinm
dose of sorbed diphtheria anatoxin as a monoantigen and
as a component included in polyvalent preparations. Zhur.
mikrobiol., epid. i 1-min. 40 no-3:59-63 Mr 163.
(MIRA 17:2)
1. Iz Institute epidemiologii i mikrobiologii imeni Gamalei,
AM SSSR.

'S.L., p-of., --tv. red. [deceased); ANAI*111,1, V.V., prrf.,
red.; VYGC:~"! G.V. , ~,rc,f. ZIL I ED- L.4 .
pro.". , red Yu, I I ka.-_d
prof., red. TilClTaKl-Y , V.L. , prof., red.
D.G., red.; GRACHEVA, N.P., Rand.
r.,.ed. naul., :-ed.
[Iro'blein.- ol,' infectiouz~' pitl-alcgy and the cxperimen,R~l
u~y of ii;fectiurw (on thfi i.,Oth birthday of Professor
Ilanelles, CorresponjlziL! llembi3r of the Artid-rky of Ma-l-al "ci_
ences of the ) ; tra- -tactions ~ the I -istitute I joprcsy
irifektsionnol pat,_;logii i eksperimentallnoi teralii infekts4i
(k SO IT-1,11a rozhdeniia chlena-korr. AYN iro.".
Kh.Kh.1--anellesa); trudy instituta. Pod obshchei red. . .1'.
Muromtseva. ~'(~~kva, IMJ. 495 p. ('xilnji 2?.7)
1. medii sinskikh nauk SSSR, Moscow. Institut ej -e-
i io2o,--ii 7ikrnblologill. __. tystvdtnllry,.,, -i.1fn Vso. i,(,v
Ins4 uts, spidemiologii i mikrobiclogii im. N.F. Gamalei M-T, SSSR
(fo:=~ltsev)- 3. Deystvitellnyy chlen AM qSSR (for Zil ber,
Vygodehikov, Troftakiy

Fowl S P.V.; AKIMOVA, V.V.; UEONOVA, A.G.; N.S.
Rxperimenta-I study of combined vac~-iae for act-lve,
against sc&rlet feverv diphtheria, whooping cough and tetanuA.
Zhur. mikrobio'k., epid. i iminun. i,) no.9-3-10 S'03.
("", i 1, 1 1.. ~'
, -P. - .
1. Iz Instituta epidemiologil i mik-roblologii Immil Gtw~a,ei
AMN SSSR.

S/126/63/015/001/014/029
C'111/E383
and Ushov, V.A.
TITLE: Possibility of using the gainma-spectrwii method for
investigatin,~, processes of the simultaneous diffusion
of two components
PERIODICAL: Fizika metallov i metallovedeniye, v. 15, no. 1,
1963, 105 - io8
T EXT: Simultaneous diffusion of several elements is involved
in semiconductor developments. To obtain the necessary experimentaL
data by the method entailin.- the rentoval of successive layers and
use of radioactive isotopes it is necessary to register separately
We various, simultancously-diffusing elements. This was achieved
in the !:)resent work by using a single-crystal scintillation gamma-
s 1) cc t rom et er. The apparatus was calibrated with a series of radio-
active elements and then checked irith mixtures of the radioactive
isotopes Cs 137 and Fe 59. Values for the diffusion coefficients of
Fe 59 in an Fe-1.16 at-','~ MO-0-93 at."'e' C alloy at 950, 1050 and
1150 OC obtained by this method agreed well with those yielded by
Card 1/2

Possibility of using ....
S/126/63/015/001/014/029-
Elll/E383
the Geiger-Muller counter method. There are 3 figures and
I table.
ASSOCIATION:
SUBMITTED:
Gorlkovskiy fiziko-teldinicheskiy inntitut
(Gor1kiy 11hyiii.cotochnical Institute)
June 8, 1962
Z
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YL

SOV/70-3-1-17/26
AUTHORS: Borisov, S.V., Pavlov, P.V. and Belov, N.V.
TITIM: A Graphical MetEo_d__for_S_o_1`vg the Fundamental Harker-
Kasper Inequalities (Graficheskiy metod resheniya
osnovnykh neravenstv Kharkera-Kaspera)
PERIODICAL: Kristallografiya, 1958, Vol 3, Nr l,' pp 90-92 (USSR)
ABSTRACT: The most powerful inequality relating the'-absolute
unitary structure amplitudes is:
UK)2 <
(UH � ~_ (1 + UH+K)(1 + UH-K)
This leads to a relationship between the signs of
SH+K ~ SH-SX and SH-K = SH-SX . The examination of
all quartets of reflections is a long process and can
be facilitated by suitable graphs. If (U H � UK is
denoted by IE and (1 + U H+K and (1 + U H-K by X
2 <
and y , respectively, then the inequality is - xy
which takes the form of hyperbolae for the case oi~
equivalence. Lines of constant Fj are drawn oizt on two
graphs (each with U as abscis-rae and U as
.1 H-K H+K
Cardl/3 ordinates) one with'values of 9 greater than 1 and

sOV/70-3-1-17/26
A Graphical Method for Solving the Fundamental Harker-Kaeper
Inequalities
the other with values less than 1 The graphs are then
divided into four regions: a) where SH-K = SH-SK
obtains; b) where SH+K ~ SH-SK obtains;
c) where neither obtains and ab) where both are true.
These can be overlaid with weighted reciprocal nets. It
can be seen that the most effective inequalities will be
obtained when three of the amplitudes selected are la-rge
and the fourth small. For values of Z near to 1 the
inequalities will also be effective, for a pair U E+K
and U H-K of the order of 0-15 to 0.20. There are 3
figures and ? references, 5 of which are Soviet and
2 English.
Card 2/3

SOV/?0-3-1-12/26
A Graphical Method for Solving the Fundamental Harker-Kasper
Inequalities
ASSOCIATION: Institut kristallografii AN SSSR
(Institute of Crystallography of the Ac.Sc-USSR)
SUBMITTED: November 25, 1957
Card 3/3

I SOV/70-4-3-8/32
'AUTHORS: .LavjL0.V.F-.Y.,,,,and Belov, N.V.
TITLE: The Determination of the Structures of Herder-ite, D3toiitc-
and Gadolinite by Direct Methods
PERIODICAL: Kristallografiya, 1959, Vol 4, Nr 3, PP 324 _ 34o (USSR)
ABSTRACT: The structures of these three compounds were determined
in parallel by direct mothods, particularly by those
elaborated in the Institute of Crystallography and iii
Gorlkiy University, which proved to be exceptionally
powerful. A full account is given for pedagogic purposes.
The cell dimensions and space group, found by Strunz,
for herderite (a 9.80, b = 7.68, c = 4.8o
90'061, C 5 P2 /a ) were confirmed. d 3.00
2h 1 obs.
and Z = 4 , the formula unit being CaBePO 4 F. The uje
of Harker.-Kasper inequalities followed b- Znchariasen-s
statistical analysis has been successful several. times
before and was applied here. Weissenberg photographs
with Mo radiation provided abundant data. There were 167
independent hkO reflexions. Amplitudes were put on an
Cardl/5 absolute scale by Wilson and Vaynshteyn's methods.

SOV/70-4-3-8/32
The Determination of the Structures of Herderite, Datolite and
Gadolinite by Direct Methods
There were 15 with U11110~ > 0.5 -In all. 45 confirnied
sign relationships of the form SH+1~ ::SH SKwere f ound.
18 signs were found uniquely by~.
U 2 < 1/2 + 1/2 U
h1f, 1~ 1-C 211, 21c, 21
and other inequalities and less directly others Ei
total of 56 "banker" reflexions. Two sirens -,~,ere civea
arbitrarily. Zachariasen's nethod was then ap-ilied a7id
gave another 84 signn, i.e. a total of 140 out of 167,
> 70% . About 20-24 pairs determined each si_cn. The
rcsult ing Fourier projection showed all atoris and ~ al,il 1,tt (,I
F values gave R = 240,L only two having signs opi)(1--si-te t-~,,
those assuned. A second synthesis with the rei:iai.,iiu~;
reflexions and recalculation with the new positions
R = 111.9(,'., without zero,.i and 20.110,,'~ with zeros up to
Card2/5 sin O/x = 1.1 . Normalisation by IODD

- -51 ---~ ~
~7~tr!

- -------- - ---- ------------
JD
SURdn' CO Et 0752-7
APP'nft. AP 009655. bj/6~56/
MORS'l., Pavlo
baum, D. I.
Gorlk~y State Universi t im~ N. I#
(Gorl, k v
-Y kopAcbqv 0 skiy
diFIE~CV~~
OBU nyy
6TLE: -Characteristics of photodiode obtalnedby bombarding sW
'-with-Jaso-rom. ions
sov~m' Fizika tverdogo tela,, v. 8,-no. 3, 1966 750-752
sillcon,.ion bombardment~,pb6 n junction, boron,
todibde, p
~;'--'..'!pbotosensltivl ty, spectralenergy distribution
~"AWMCT: _10', View: of 'some contradictions In the published data on the
r6dUction~,of,phbto'electric,p-n junctions by ion bombardment, the
thorsAnvestigated the dependence of the characteristics of photo-
lodes"Obtained-by-bombarding n-Ollicon with 60-keV-b6rbn Ions - on the
pradlation dose and on the ~wneallng',temperature~. --, The n-type ~sllicon
as 'doped.. with phosphorus -and . was, externally oxidized : to an oxide
Ached on the
6ickn6as,-6f: 0.7 4.,:Windows. of 500:P diameter vere. e
Z_
Card

'229
t~ 00 NR. Ap6oo9655
-o idation'~ covered the
botolitb6grapbyo. secon
jllde,..surt,~be. by'- p
0 vitb a,. layer of Si of 0.9 w, thickness. The bombardnint with
02
ev,boron.ions was in an accelerator with ~a magnetic analyzer. The
2
-700 ~L
iation-doser, were 0.1, lOJ 100.9' -300.1 500,:. and C/cm The
ealing temperature - varied -from 6go to. -1, 000C, and' the annealing time
_4 .-to
rom 3 :30 ilinute s -! ''At 10.1 1'C/cp~~ the diodes bad. -very poor 1)hoAo-
Be at all annealing temperatures. At doses:above
100 1W/em" the
photosensitivity decreaBed; Removal of 'IayerB~of different tbicknessesi
4.. .,.~bas shown that the dislocations penetrate to a~depth of approxim3,tely
P-n Junction'lies~ 0.5 ~L- thick so that the disloca-
whereas the
s can participate In the excess carrier combination on bcth
ion re
sides.of the junction. The dependence of-tbe.pbotocharacteristies on
b, e iannealing temperature is attributed to the TAct.tbat witb'in-
ireasing dose a bigh temperature is necezzary,to anneal out the defeCtOl
'A pre3iminary,
;that inftuence tbe.condu the inversi
ctivi ty of on layer.
of.the spectral obaracteriBties of the photodiodes has
Isbo'wn that their maximum sehBitivity Is at .0. 83. I'l" ]I wavelength I
and that this maximum.sbifts towards longer wavelengths with increasing
Card
Card 31~2

AMM: Faylwp F. V.; Zorinp Ye. I.; Teteltbausp D. I.
M: Gor' labacheys
___4V57tm&~t9'Un&*r&1ty In. W. 1. My (Gortkovskly gotudarstvenmyy
universita)
TME: Inversion layers produced on n-type germanium bombarded vith boron and alumi-
num Ions
SOURCE: Mika tverdogo tela, v. 8# no. 6, 1966, 1791-1795
TOPIC TAGS: germanium semiconductor, surface propertyj, Ion boubardment, boron, alu-
minum., impurity conductivity
ABS2RACT: To check whether the inversion layer produced on the surface of germanium
by Ion bombardment depends on the type of ion used, the authors bombarded germanium
.vitb 5D-kev ions of several elements (B., Al, Ne, Ar., C). The irradiation procedure
vas described before (Yff v. 6, 3222, 1964). The ion current vas -5 ps/cuP w-A the
doze r=%ed from 0.01 to 10DO coul/me. The presence of the inversion law was de-
terafted by a procedure described in the earUer paper, and the resistivity of the
laversion 2MM 1" amnired both directly after Irradiation and after annealing;
1p the latter case the dependence on the annealing temperature vas also measured.
3ji addition, a study vas nade of the depth distribuLion of the acceptors (Al and B)
Iptroduced by Ion badba~t. The results show clearly that the surface resistance
"ends In a camIxUcated manner an the type of bowbLrdimg Ion, the Irradiation done,
? .1
c.,A 1/2

ACC NRI AP6033559 SOURCE CODE: uR/oi8l/66/c)r)"-J/010/297V298i.
AUMOR: Pavlorv, P. V. ; Uskov, V. A.
ORG: Gor'kiv State University im. N. I. Lobachevskiy (Gor'kovskiy goLudarstvera-W
:Iuniversitet)
TITLE: Investigation of the diffusion of antimony and indium in germanium with ac-
1count of the internal electric field
SOURCE: Fizika tverdogo tela, v. 8, no. 10, 1966, 2977-2981
TOPIC TAGS: antimony, indium, germanium, physical aiffusion, semiconductor research,
gam-na spectrum, surface property, crystal lattice defect
ABSTRIXT: This is a continuation of earlier work (M V. 7, 3346, 1965), where a
theoretical analysis was made of the influence of the internal electric field on the
diffusion of impurities in intrinsic and impurity semiconductors. The present in-
vestigation was an experimental check on the results., as applied to t-,c dif.^Uzion of
antimony and indium in n-type germaniixn. The diffusing atoms were the isotop(_S Sb12A*
114
and In from the gas phase, under conditions corresponding to a constant source.
The depth variation of the impurity concentration was determined by the method of
layer removal. The residual activity of the sample was measured with a scintillation
7 spectrometer. The procedure for determining the diffusion coefficients is described
in a paper by V. Ye. Kosenko (Izv. AN SSSR, ser. fiz. v. 20, 1526, 19506), by compari-
son of the experimental curves with the standard curves derived in the authors' earlier
Card 1/2

ACC NR, AP6033559
paper. The diffusion coefficients and the various diffusion parameters are tabulated.
.L. AP r
The results confirm the correctness of the formula derived in the earlier - e for
the distribution of the impurity with allowance for the internal electric field
,arising during the impurity diffusion process, provided the surface concentration
:does not exceed 4 X 1C)19 Cn,73. When the concentration increases, certain factors un-
iaccounted for in the earlier paper come into play. One of them is the occurrence of
the defects in the lattice during the impurity diffusion. Another may be the presence,
of both neutral and ionized atoms in the diffusion flow. The experimental evidence
,favors the assumption that the deviation from the theoretical values are due to the
iformation of lattice defects. Orig. art. has: 2 figures, 1 formula, and 3 tables.
SUB CODE: 20/ SUBM DATE: 14Dec65/ ORIG REF: 003/ OTH REF: o14
Card 2/2

ACC NRI AP6033567 SOURCE CODE: up~oiBi/66/cc,~-!/C)10/3C)43/3o46
AUTHOR: Pavlarvj.P. V.; Sterkhav, V. A.
IORG: Gorkiy State University im. N. 1. Lobachevskiy (Gor'kavakiy gos-~-_arstvenny
i
juniversitet)
I
TITLE: Diffusion of indium over the surface of germanium
SOURCE: Fizika tverdogo tela, v. 8, no. 10, 1966, ~o43-N46
ITOPIC TAGS: indium, germanii=q metal diffusion, surface property, tra',SpOrt Property
iABSTRACT: The authors report results of an investigation of the diffusion and elcctri~
Aransport of indium aver the (111) surface of single-crystal p-type Ge ,;-th resist-'vi-I
C_ -2
ity I oln-cm and dislocation density 3 x 103 . The diffusion was car led out
,n at
j600 - 910C, and the electric transport at 500 - 800C. The distribution of the dif-
fusing atoms in depth was determined by a "layered sample" method, usinj Inlil~ as the
tracer, wherein the sample was made up of stacks of 8 - 10 plate& 5 x 5 x 0.4 1-m, and
~the activities of the different surfaces were measured. The exper--*7,ental data obtained
~on the diffusion was reduced by the "standard-curves" method described by one of the
!authors earlier (Pavlovy with V. A. Panteleyev, M v. 7, 2209, 1965',. Account was
I
itaken of the fact that indium is transported by the electric field ei-~'.-er to the anode
;or to the cathode, depending on the temperature, owing to different de~;rees of electron__
Ihole dragging. The values obtained for the coefficient of surface diffusion, D3. - 2
jX .102 ex-p(-54-5/RT) =2/sec, agree well with the results obtained by other&. The
V2

IACC NR: AP6033567
I
i authors, thank V. A. Panteleyev and V. A. Uskcrv for a useful discussion. Orig. art.
ihas: 3 figures and 10 formulas.

ACC NR, AP7007168
SOURCE CODE: UR/0070/u"7/012/001/0155/0157
AMITIOR: PaVIOV, P. V.; Tetellbaum, D. I.; Zorin, Ye, I.; Kudryavtseva,
R. V, ------
ORG: Gor.11ciy Physicotechnical 11cocarch 111stituto (G0r'1(0Vr;'o.Y
lBfilodontel'Skiy fiziko-te"dinichaskiy Institut)
TITLE: The amorphism in polycrystalline germanium films resulting from
irradiation with argon ions
SOURCE; Kristallografiya, v. 12, no, 1, 1967, 155-157
TOPIC TAGS: amorphous polymer, semiconducting', film, polycrystalline
film , germanium semiconductor, thin film semi conductor, irradiation (-r,'~L-ct
argon, ion
ABSTRACT: An investigation was made of the transition o'L crystal'L-ine
.-erimanium ini"o the amorphous state as the result of irradiation, The
experiment was performed with thin polycrystal line germaniu!.-I The
films were obtained by the vacuum coatincr of an Na~,'l bacliin- heated to
t~OOOC. The film thickness varied Lro,-.i 200 to 500 A, which ricant that J"-'
was smaller than the mean free path of the ions. Bombardment wit'-
kev argon ions was performed in an accelerator wiP a ma.cnctic
The density of the ion current was 2 to 41jamp/ in The irrad-lation
doses were 1, 10, 100, 1000, and 5000 pcurie/P. The vacuum, in the
Card-11*2 UDC: 54,8.-7-4

ACC NR:AP7007168
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vicinity of the target was 2 x 10 rim Hg During bombardment,, the
specimens were heated to 90% in order to reduce crganic vapors. At a
does of I vaurie/cm no changes were observed in the specimens. Z 0
eve; atdoses of 10 vicurie/cc~-,2 and larger, the electronoirams clear!-.-
indicated the transformation of the gernanium into the amorphous state:
the sharp lines disappeared and wq~re replaced by two or three diffusion
rings. The location of the intensity maxima did not coincide with the
location of the interference rings of the crystalline germman_ium, e_