SCIENTIFIC ABSTRACT PALATNIK, L. S. - PALATOV, K. I.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001238820012-4
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: January 3, 2017
• Document Release Date: August 1, 2000
• Sequence Number: 12
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

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,qutrilttta Aj-T',l 19, IQ6).
GaeeA
,~N ~~-Sh. N-
-org. mat. I na.1 1 83-1888 N 165.
(MIRA IF:12
i. flauchmo-issiedavateilskiy Institut osncrvsnoy khimii, Kharlxov,
i PoliteHir.'clioskiy InstiLut Lmard V.I. ~~nlna, Khar'Kov.
~clymcTpr;!sm of selenlde
of vp-riable comrosit~-)n. : zv.

KLYUCHAREV , A. P. [ K1 I ucr:arl ov :.4T.N, Kf L.S. a *.n3-k
NIKOLAYCHUY., A.' .
I-ray Btrniraturai tinalys'.F, nf tarFo-tf; des',p-nee
nuclear researr!h. 11K.--.".7..zhij!-. 10
2,4,
AN
Kha r I x. o vs y T-, c. -1 P u t I o; . L- r, I r. a
April 19,

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s ca t te r i nf, rp,~ -* ons , a ncl m,. c r de f t 4, 0r'3 ir, Pe I , C, -,, E! -A
nickel rond---i~satior, !', 'mc;. .1 .
I - Fiz., met. i meLalioved. ~O :-0-4:
103-110 .; i , t)~ . (M.-FA It:: , .
~ I - k~y irs* itut imeni V. : . :,-nina,

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PALATNIK, L.S.; GLADKIKH, N.T.; GERLOVSKILYA, L.V.
Effect of annealing on vacuum metal condensates. Fiz. met. i
metalloved. 20 no.3:396-400 S 165.
(MIRA 18:11)
1. Kharlkovskiy gotitidarst-venny'y universitet Iment A.M.
GorIkogo i Kharlkovgkiy politekhnIcheskiy institut Imeni
V.I.I.enina.

L 8926-a EffJ(P) /EWP (W) If/EWP (t I IM. (h IT.TP(A In
MVOI-26/65/020/004/0574/0578
AUTHOM, 11" -+Q I -1.J. L P OrOV, G. V t1lovo A. I.;
; Prokhva
Y Y, -f
abala In*t
1har kay low* Itute In. V. I
WU%A_ MIX'kavokly
TITLE: Nechanical pMert of vacuum a *nest*p of A1101jon-
It A, I/r, ;r 7%, jr ) V
SOURCE: Miks ustalLoy I UGUIlovedenlyel, vNe no* 4v 1965,
S74-5M
IOPIC TAGS: aluminum, condensation reaction$ vacuum sublimation
ADSTRLCT: The article is devoted to a study of ajAvtam~48cuux
condensates obtained by vaporization of the metal from crucibles
.~_..made of alundum and beryll1up oxide. Ali, Inum and Its.alloys were
vaporized In &-vacuum of 10-2 = Hg. The condensates were formed
onAOollshed and carefully olesned open steel rings, located co-
~;qdslly 'With the crucible at a distance of 80 me. A temperature
gradient of 50-55000 vas created by boating one end of the ring
and cooling the other. The thickness of the condensate film vas
approximately 40 microns. Vaporization of aluminum from alundum
CIS-" 1/2 UN: 539.23 +

18916-66
ACC ~N& A25027144
oraqlbleo at 120090 was accompanied by the reaction of the material
-of.-the crucible with the molten aluminum. At the end of 3-4 hours
...~.thok_s~vas formeda solid solution 1.5 mm thick on the walls of the
crucible. In this, the amount of the alloying aluminum oxide was
evaluated at from 8 to 10%. 0It was found that at a condensation
temperature greater than 450 , the aluminum oxide in the condensate
Is--,' formed In the crystalline state of gamma aluminum oxide; at
lower temperatures' In at! amorphous or subdispersed state. Aluminum
oxide' Increases considerablz the m1crobardness of ths aluminum
condensate (up to 3,30 kg/wi~). Annealing at 230-490 has the
opIposit* effect. Samples condensed at temperatures of 450-5200
do not recrystallize during annealing. Condensates of a multi-
component, alloy of aluminum, copper, magnesium, manganese,, silicon,
and irou,,based onaluminum reinforced with aluminum oxide, have
donsiderablestrangth (50-60 kg/z&~) and greater ductility than
.condensates of aluminum obtained under analogous conditions. Orig.
art. has: 110raula, 3 figures and 1 table.
WD COW: JW/ SUM JDLTB: 24JuJL64/ ORIG -2V: Oll/
M- awr 002
M
Pd
~

'IFGIIZ,'N, Ya.Yo.,,
PARIT~'AAY; N.
V,-ffusfun
a c w,5 r zi '~ n,:, va C.t-
aiet'al
rhar 'K e
C-C r I ~. c g.

PA.I.ATNIK, L.S.; FEDDROV, G.V., BOGATOV, P.N.
Sorfir, roguiar ftiatirpti of Lho vol-ime -r,rIdqnnat,.:!r, (-f &.r~;
7.
Fl,z. tver. teLa 7 nc.9x;~>648-2654 3 165.
( V, I F"., -, 9 ./,.
1. Yharlk,)v--RI,7 pc.IJiakhrlrhp3k4y, in.9titut Imeni

Tr=: Investigation of PemaUW f1lud idtb a "supercritical" hysteresis loop
BOUNZ: rialka tvardago toles T. 7, no. 9 5, 2829-2933
'~1196
0~' iv'v~ 'D 21 L/41)
-Tone TM, Ups"t in film, rerman4, hystoreAs loop
studied Parmalloy film of vw1ow thl .-ge havIV4 a "Super
Wf: The authors
'witical" Vatervels loop with as Initial composition of 83%.W 17V To. The pur-
WO* ~ -a detailed LaWaYSIS Of the domain structure and behavior of the
1"ter"Le I=*-- parameters over a wide vwg* of file thicknesses (0.4-20 P) and sub-
(2W-%SO*C). The wtbods veod for preparation of the specimens
.=61be vaperizaptal coaditions we described. Oscillegress of the hysteresis loeve
at ~ vil*ws I for a single specisien am $Ivan. A Oxopercritical" hystere-
SbCw� Ig fig=* 1. ft jonew In the q*sft*t* tempemUre ft= %230 to
1000C exasse a easiderable redoe Lou in No Md 1,90 Md. #0 Iftn"s In BVB'v Md the
aNgle IL With a furthei Increase to the ed*trate tow"Puturso the sbup break at
..C". 2/2

L UW-66
ACC NI& APM2731
i, Polft Re Is smoothed out. the coorelve ferve is reduced, and the imp loses its
"WVercritlea" dwo. ?M ratio NSAO fMU fron 20 to 2-3 In the 230-3600C te"ra
t romp. The ratio B.A. Inummes with a
roduction In 911A thickness varyixg from 0.05
'to 0.85. This Is In contradiction to pro-
viously proposed theoratica models which do
aft allm a vaUs I"s tham O.S. A model is
propond for distrUalm of mWetization
Jnt~fty In a Mu with "rVerarldcal" hp-
lospi arl'. wt. has: 6 figures,
ORM W: 006/
=art 006

i It 'JTN I KO ; GI,AF)K IF H, N. r. -, N Ali OKA, M.N.
S ~ucjy of condensed f-. Lii of - u-,1.'3 and -wf ',"- -,' :4' ' C-
- -ela 7 n~,.9'2851-285,2 S 165. - " - ~p ~0;
-ltic)n. Fiz. ~ver~ T
1. P,I~tekhniche-ikiy jriitltot, lm,nl, V.r.lpn'.ria, Yrl~,T

L 536h-M EWT('M)/BW?(1)/6W(t)/EWP(b) IJP(c) JD1JG
ACC NR: AP5027307 SOURCE COM: UR/0191/65/007/011/3163/3168
AUTHOR: Palatnikli' h. S.; Fedorenko, A. 1.
5-5
ORG: Kharkov Polytechnic Institute (Kharlkovokly politekhnicheekly institut im.
V. 1. Lenin&) !>
:TITIX: Condensation coefficient of beryllium
SOURCE: Mike tverdogo, tela, v. 7, no. 11, 1965, 3163-3168
TOPIC TAGS: beryllium, vapor condensation, metal film vapor plating
ABSTRACT: The condensation coefficient a of beryllium Is experimentally studied as
.a function of substrate temperature 7 ., deposition rate wk, and the angle # between
8
the molecular beam and the normal to the film surface. Vaporlz*d Be was deposited
on a polished Iron substrate with a sublayer of Wl in a vacuum of 8610-5 mm H8.
The w"rimotal method and equipwat an briefly described. It is found that film
.thickness is a function of all three parameters, TO, wk and 4. An Increase in To
causes a reduction In thickmos, which my be due to an Increase In the density of
C,Wd 1/2

15364-66
.ACC NR: AP5027397
'the film, a change in the surface contour of the deposition, and a reduction in a.
iDiffusion processes are intensified as is increased, resulting in denser conden-
i %
~sates. A reduction in density was observed with an increase in # due to increased
'porosity. An Increase in a. results In increased density and smoother deposits.
!'Curves for a as a function of T show a sharp reduction in a narrow temperature in-
:terval (3,300-4000C) with only a slight reduction'la the condensation coefficient as
the teoperature Ao Increased above this interval. The anomalous behavior of the
Ion coefficient for Be Is apparently due to the high ratio of the inter-
atemic eDmW in the crystal lattIce (Debyo toopersture 10009K) to the atemic weight
of beryllium (9.013). OrIg. art. hoo: 3 figures, I table.
M CON: NNI
SM UTto 02NarGS/
me rxrt oce/ OTH Rcr: on
Cwd 212

-----------
L--"10807-66. -qK(v)/T/EW(t)/EWP(b)/EWA(c) IJP(t) JD
ACC ~' ONW~~ APS0287216 SOURCE CODE: tM/0363163/001/011/188?11880
96
Belova, To. K.
q
ORG: Scientific Researcib Institute of row1amental Chewing (Nauch"o-issledovat
:,4itly iiiititu-conovavy khWl); PaTtechnic Institute In. V. 1. lownim, Xharkov
takhnicbeeldy Institut)
:-_,TITLEt Study or the polymorlphlow of the variable-composition."Ienids Ga2S~J
SOURCE: AN SSSR. Isvestlya. Neorganichookiye naterialy, ve 19 no. 11, 1965,
TOPIC TAGS: gallium alloy, selenium alloy. gallium compound, selenium compound.
pbase transition
-ABSTRACT: Ge-So allays close to Ga2S*3 in composition (38.5-42.5 at Go) were stud-
led.
The nicrestruc we, microbardness, and x-ray diffraction patterns were deter-
ali~im r
d. "aiSs' 3 was found to be a compowd of variable composition. Selenium dissolve*
Ga25*3 to the extent of SO*2 at S; the bamdary of the solubility region of Go
liew at iO.24-W.59 at % Ga. New 0 and y pbm*s of gallium selonide were observed In
the- of GO.11-60.2 at % So. The conditions of existence of the a, 0. and y
pbeses were Investigated. Me tbe a phase. tin ~ y pbase has a zinc blonde type ~truc-
~.tuxwaid difft In the value of the lattice p a an (am a 5.422-0 0.003A. a.
UDC: 5W.6911231:539.261
i12'-

ATROSHGHENRO, L.V.; GAl,lCHI*T-~YJY, 1-1 .; KOSHKIN, V.M.; FALATNIK,
1.
Deviationsfrom stoichiomf-try and 'q;ssolution n~' llmT)urltJ-i3 In
semiconductor rompounds of the B -Ilj Cft 'Tzv. AN SSSR.
Neorg. mat. 1 no.12:214C,-2150 D)f65. 'Ype' ' (MIRA IQ:i2)
1. Nauchno-issledovatellski), invlltut nsriovnoy ktimii,
Kharlkov, i Kharlkovskiy polilekhnicheakiy int;lt,t ~m.
V.I. Lenina. Submitted May 31, 19,-5.

EWT(M)/EWp(t)/ER(b) lip(c) JD
WW" As"VWWOU SOURCE CODE: UR/007076h7olOrO06/085U6861
~-AUTHOM
1kiffa, Yei~ X.
3
ORG Moril-W sai _2=RMM-G1h 1281100 GUID"ic ChemistrY (11(harltovaldy nauchno-
instedovaklooldy i=tihd onnovanay khlmff); nulkov Pil-y-le-dMic-histitute im. V. 1. Lenin
(X]1arqC6"1dY polite Idy institut)
TITLE: The structure of semicondueft GuGaTe -GaTe, alloys
2
-SOURCE
Kri'dallograflya, v. lo, no. 6, 1965, 858-86,
TOPIC TAGS: semiconductor alloy, gallium containing alloy, crystal structure
ABRUCT: The knowledge of the structure of
GvGATe2_G92T83 alloys is of interest for the
study of interactions between defect-containing and defect-free conkpounds. The authors
carried out. the stuiy of Ua structure of the alloy by means of the x-ray and microstructural
analyals'and =29ijd,1�s state.diagram of go system. The results show that 1) there exist
eignifibPat. regions Woes with chalemyrile and sphalerite lattices; 2) the creation of a
~ctwo-pbaiip r*10on is relaw to do dooq- into go-Wo phases of 0a solid soluUon during cooling
havftm' ordered and a iis cation ~ lattice
respectively); 3) st high
ten"'ratdreather6existwithin the
systems untler luiesUgation a continuous series of solid
solutions; and 4) the maguitede of the effective covalent tetrahedral radius of cation vacancies
In alloys with spholerits structure to constant and smaller than the covalent raffil of the cojppe
1/2 toyj~pe,- UDQ "0. 736

01,

T. Mn_66 M(MIL&NM I'Micl JL111W.
AZCQ09486 UR/0020/66/167/001/0077/0079
AUTHOR: Palatnikq L.B.; Boyko,/B.T.; Puke, M.Ya.; Pugachev, A.T.
ORG: Kharkov Polnechnic institute in. V.I.Lenin (kharlkovskly polit-
ekhni kly Institut)
TITLB: Elastic anisotropy of polycrystalline condensed films
SOURCE: AN SSSR. Doklady, v.167, n0.1, 1966, 77-79
TOPIC TAGS: polycrystalline film, ystal anisotropy
ABSTRACT: The article describes el;tronographic studies of the deform-
ation of thin polyerystglline films of alumlnu, silver, and nickel, with
thicknesses of 400-500 A, condensed in a vacuum of 5 x io-5 torr, at
differkut temperatures of the support. The rate of condensation was
20-40 X/sec. The films, separated from the support,, were transferred to
a Dlate with a alit and were put into the electronograph by means of a
special device. Results of examination showed that, for thin polycrys-
talline vacuum condensates of the elastically anisotropic metals silver
and nickel, the elastic anisotropy of the individual crystals was pre-
served, although not to the degree that might be expected for complete
Isotropy of the stress field, such as for example, for Isolated mono-
Card 1 /2 11D0! R39.4.019 & S39-23

ACC-MRs AP6009486 V1 2-
crystals. For aluminum films with a weakly marded elastic anisotropy,.
anisotrople els.-OTIC-Te-format no of the lattice were not observed elec-
tronographIcally. In zdckelqilmo, condensed at a temperature of 650,
the average etze of thi--cryetal blocks, observed by diffraction expan-
sion, was -30 A. Evan, with such a dispersed structure the elastic aniso-
tropy of the individual blocks was preserved, but there was observed a
tendency for It to become weaker In comparison with coarse grained films
OrIg. art, has: I formula and 3 figures.
SLTB OODE: 20/ SUBM DATE: 06Dec65/ ORIG REP: 006/ OTH REP: oOl
I T~ Card ?/2

JD
ACC Nib' APGOOSO01 SOMCE CM tat/0020/66/166/005/1095/1097
AMM _-Palatnik, L. S.; Fedwov,'G. V, 41
4 8
AM0*0V
ORG: IrteebrAcal Institute in. V. 1. IMin (Khar1kovskiy polit
TITLE: Intraphass step in structural formation of vacuum condensates
MUM AM S88R. Duklady, v. 166, no. 5, 1966, 1095-1097
-TOPIC TP466- copper vacuum technology, vaporization,, vapor condensation, epitaxial
WMANINt.- met"
tafte state, pbase transition
ABSTRACT: The authors study intermediate metastable structural (and substructural)
states and transitions in vacuum condensates of 111tals ; WKcdinra thermodynam-
imi _ el i t ry
phase transformations in the solid state are missi 1%9 ic ransformations,
eutectold decay, decay of supersaturated solid solutions, ordering or disordering,
etc.). The specimens were massive vacuum condensates of copper with a thickness of
approximately I maproduced at condensation rates of 0.25-1 P/sec. The copper was
VaPorized in a vacuum of 10-5 ma Hg from alundum crucibles placed 20-25 mm away from
a copper substrate which was heated to a temperature of 80-7500. The sicrostructure
and nicrobardDems of the surface and transverse sections of the condensates were stud-
Ind. The first stop in formation of the condensate Is natural condensation accord-
41-1
1/2

L 23231-Ob
ACC NR; AP6006081
ing to one of the mechanism: vapor -a- liquid 4 crystal or vapor -,, crystal. An ex-
nonequillbrius structure is formed at rather low temperatures. This is due to
the high dispersion of various lattice defects and to alloying of the condensate by
residwa gases. The second stage is characterized by parallel lines an the trans-
verse section. The orientation of these lines is independent of the condensate tem-
perature and the a of condensation.'~T" microhardness in this stage drops from
Z_I (,Roe tallization begins in the third stage accompanied by a fur-
200 to 120 kg/am .91
ther-reduction In microhardness to 9D-100 kg/=2 and the formation of a polycrystal
.with a large grain size. The fourth stage In the formation of the condensate is epi-
taxial recrystaUisation beginning at 2500. There Is also a further slight reduction
in microbardneas and increase in the grain size at th-9 condensate-substrato interface,
At toWerstures above 5000, condensation takes place by epitaxial growth of the crys-
tals In the substrate. The experimental data indicate that processes of structural
formation in vacum condensates of oure metals conform to the general intraphase step
rule. Orige wt. has: 2 figures. Z/ , 11
SUB CODC:1420/ SUBM DATE: 22JmSS/ ORIG IREF: 002/ UrH REF: ODO
_'ICA
2/2 91-0

EWT(I)/B4(n)/*E7C(f)/Erj(m)/T/EW(t)/ETI- IJP(c) PAN/GG/JD
AUDIM:' L, S.; Sorokin, V. K.
ORG: Miartkov Polytechnic Institute 4.-.M&_jt_j&aUL(Mwr'kovsk1y politekhnicheekly
j T -t-2
TITLE: On oriented growing of.2md Belanide and taU=14L
SOURCE: Mika tverdogo tela., v. 8p no. 4p 2966v 1088-IM
TOPTC TAGS: lead compound., selenide,, telluride,, epitaxial growing,, temperature de-
pendence., thin film growingj, vapor condensationp electric conductivityp HILU effect
A267WT: This is a contimiation of earlier work (FTT Y. T, 3&B# 2965) where it was
found that in the tesperstvre interval 180 - 3WC It Is difficult to grow thin epi-
taxial film of PM on NaC1,, in spite of the fact that growth at lower (140 - 180C)
and higher (300 - 4W) temperatures is possible. To investigate this phenomenon
furtherp and to determine the influence of the type of substrate (Mel,, KCI) and the
condensation rate,, the authors investigated the Influence of the preparatiou temper-
sture"and the rate of condensation on the carrier =Dbluty In PbSe and PbTe film
1 - 5 P thick. The PbSe and PbTe condensates were prepared in a vacuum _5 X 10-4
Thrr on freshly cleaved single crystals of MaCl and MCI. A special geometry was used
to check on the effect of the preparation temperatureL, as described in the earlier
paw. The carrier mobility was determined by measuring the Hall effect and the con-
ductivity. The results show that substitution of MI for MCI shifts the entire plot

AP6DI24"
of the temperature corresponding to
minjum wbility vs. the condensation rate toward
bisher temperatures. In the case Of PWO the tftTarltUrs of the adnJimm increases
P=t:Lc&W IInftr1Y vith the condensation rate$ While for FbTe the relation is pars,-
bolic. - An - avirical relation between this teneraturo and the condensation rate in
derived. 2he resate confirm a bWpothesis adnmed in the earlier japer that at the
temperature of minimazz mobility a chmWe takes place in the manner of formation of
condensation nuclei. Orig. wt. boa: 3 figures am 2 forwaliase
I!W CIMM-f-~ :;!6/ 7MM DM: 1"1v65/ OM RV: W61 OW MWI 001

L 29225-66 --EWT(- )/T~EWPWATI IJP(c) -JD
--10-12
SWWE CODE: UR 6/021/002
F ACC'NI. - AMM9365
:AUTHORs Palatnik,.Le S. Dly 4~6
11ronin, S.-V.1 Raylik A., Go;
Achenko, Ve S.
MG: Kartkaw Pblvtdchnic Institute In. V. 1. Lenin (Khartkovskiy politekhnicheakiy
imptitut
TIMs Blectronographic and electron microscopic investigatico of carbide3 in iron
do WnW owdensed in a vacuum
ISO
111=1 met Mi." -222
JUPIM anov L. metalloved ve 21, no. 2v 19"t 217
iron iampoundo' cubidep fteleation,, electron microsc61W. annealing,
..,"alloys, metal film
all6p wev iMab" tr and sweessive
AMUCT: ~7hln fl2m Fe-C
at the GORPNIMMte of SPOOSOMS with va3dable composition. Ths
f ffftt, Qt eamdUms an the twmatkon of this @art&& phases was
w" obUlned in 00 fums. Vmn It was
@A lnv"mdbU was obeerved: eftxC -~OexC
obtained by nomedw oon&ms&U= of Fe and C.
Ahe rQMtUG
of oementite passes through the metasUble phsaws spailon.
Jud in the b0ayered f12=9 as well, &o In fIlm obtained by the
-'Han as#= ot Fo and C9 the Immeftate formation of osmantite
OOGMI
UDC: 669.11:548.74

~k- 739-67 EWT(Q/EWT(m)/EWP(t)/ETI IJP(c) JDA
I AM HL AMJB%2 SOMM COM
AV=1 ftUtldko L. S. A*09 116 Te.1 901"s D. T.1 Pandwkhs, P. A.
=I Muntow 1617technio institute to. V. 1, lenin (KharOkovskly politekhnicheskw-~
Instit-a)
7 of the block structure or aindnom contlenestes
=no 2i" diffraction stud
MALM
nalke matsUovedenUso v. no no. 69 1061, 80-8
TWIC TAW2 aluminang wtalri2xv electron diffraction analysis
AWIRMS In an earlier paperg the authors described the electron diffraction micro-
bsnml~nethod for datendning the also and dinrientation of block wqxtallitos in Simi-
"MR,vaGUOR O-A nutes 60-M I thick after annedi"S atWowdabova. Inthepres-
ent w0fto this technique was developed by increasing the resolution of the various re-
f1bOtIonsp so that the point diffraction lime on the electron diffraction patterns
Weri obtained with films In the initial (unanywale4 state. This made It possible to
wu* the substructure of the riba without altering it by the absequent action of
'heat. - Mw wwago ler4th of the blooke In wwmeolod A films contlensed on an unheated
EdotrAo Changes fma 220 to 320 A as the film thickness ohaqps from 150 to 750 1.
1he lover 34odt of the discrientation angles is 1.5-20. 111ma t50 1 thick have a nono-j
block strooturs In their thickness. At 4W 1 and higbarp the monoblook character is L
Small"; It to pmbably a structural factor which dotaulnes the effect of the thick-
card 112 DWI 5".4

L 00739-67 --2
r ACC Nib AP6018542 C>
num on certain structarsl3Ly sensitive properties. Us presence of a sufficiently
large nmb 1 of block* In the thickness of the filia makes the latter similar to massive
- -Aft"A 0 Dw density of the Arem of condlensIM stans Is oto of the paranotere detor-
Idld tM fWR of tbg blookeg 1. e.9 tMir also In the plow of the Ma and along
the normal. to it, Phrdog propiefties sensitive to thA may be different
In the Aisne of the film and slong the normal. Orig. asti. hass I f1preg I tableg, and
5 formal" 0
SM 0=1 II/ 8M MR$ 15J=65/ MM MWI 006/ OTH MWI 004
2
Cow

L 06486-67 EWr(m)/EWP Q/Ef1 I JP C)
-A T--N-R-. --Ap6o282. SOURCE --c-6b81- -URf&~K~16Q002/0D6/1025/1030
AUTHOR# Palatnik, L. S.; Bblov&. Yo. X.
ORG: Scientific Research Institute of Basic Chemistr (Nauchno-issledovatellskly in-
'-Y
sti Uytechnic M-STItute is, laning Rmr~ov kFolitokh-
nicheskiy institut)
TITLEs Structure of the semiconductor alloys Ag2TG-Ga2Te3
7-- -,-7
SOURCE& AN SSSR. Izvestiya. Meorganicheskiye materialy, v. 20 no. 6, t966, 1025-
1030
TOPIC TAGS: semiconductor alloy, silver compound, gallium compound, telluride, alloy
phase diagram
ABSTRACT: The structure of alloys of the binary ction Ai-,2Te-Ga2Te of the ternary
r the :1 analysis, and
system Ag-Ga-Te was studied by x-ray diffractil~n-j microscopy,, rm
microhardness measurements. The phase diagram plotted for the A92Te-GaT
03 system
I shows that alloys containing 77-100 mole % Ga ?TO, crystallize with the formation of y
solid solutions. At room temperature, there is bbserved a region of solid solutions
(y) based on Ga2T93 (90-100 mole % Ga T03) and a narrow region of homogeneity based on
Te8 phase with an 2ion
the AgGa5 ordered ca -vacancy sublattice y'. A two-phase region
In the range Of 85-90 mole % G&2T"3 arises when the solid solution decomposes into two
phasest one with an ordered and one with a disordered cationio sublattice. In the
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range of 45-75 mole % Ga2T9 (including the corymaund AgGaT02), the fusion proceeds via
I& peritoctio reaction at 7240C. In the vicinity' of the composition AgGaTo there is a
low-temperature region of 0 solid solutions. On cooling, the 0 solid sMlon decom-
poses, and all alloys containing less than 85 mole % Ga2Te consist of two phases
(AgGaTe2 + y) at room temperature. Alloys in the rang 01 0-50 mole % rJA2Ts 3 consist
of a mJxture of two phases, Ag2Te and AgGaTeZ. They form a eutectic at a composition
of about 25 mole % GA2Te3. Authorsare grateful to L. I. Berg r for his suggestions
;on the problem of the technique foz4'~purifyingtellurium and to N. M..Panasenko for
I
,plotting the thermograms. Orig. art. has& 5 figures and 2 tables.
SUB CODBI 11,7.0/SUBM DATE& 09Aug65/ ORIG REFt 005/ GTH HUI 003
Card 212 1~ / C-

L 06487-157 F; W-1 da P~ ~'Ifj 1- - 1_~LD
ACC NRi AP6628299 SOURCE COM UR/0363/66/oo2/oo6/1031/1037
AUTHOR: Palatnik, L. S.; Manyukovap L. G.; Koshkinp V. M.
ORG: Scientific Research Institute o-f Basic Chemistry (Nauchno-isoledovatel'skiy
institut oanovnoy khimli); Kharkov Polytechnic Institute im. V. 1. i0pin (aarlkovskiy
politekhnichaskly institutT________
TITIZt Electric propertios/dof alloys in the Cur'aS62-Ga2S03 system
SOURCEs Ali SSSR. Izveatca. Noorganicho5kiye mAterialy, v. 2, no. 6, 1966, 1031-
1037
TOPIC TAGS: selenide, copper compound, gallium compound, selenium compound, semicon-
ductor &Uoy, thermal eraf, forbidden zone width, semiconductor conductivity
A33TWiCT; The paper continues the study of the aemiconductor systems A
(chaloopyrites) - B2I1IC3VI (compounds w-ith a sDhalerite lattice), which contain broad
regions of solid solutions with a diamondlike lattice in which the concentraLion of
stoichiometric vacancies changes monotonically. Some physical propertie3 ~optical
.width of the forbidden gap aC, electric conductivity iY and thermal emf a) of furnace-
cooled alloys of one such system, Cu~3a~,,-Ga_'303, were measured. As in the Cuir,5(j2-
in 2SG3 system studied earlier, the conductivity decreases even at low Gan'So-j concen-
.trations, and 69 remains practically unchanged in the existonce domain of Lfle ch&lco-
pyrito phase and changes very rapidly in the region of the sphalerite Structure. ina
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effect of increase in at during orderinp annealing was observed on some alloys with
stoichiometric defects. Both the concentration ordering and thermal or6oring of the
crystal of a multicomponent semiconductor increaseLf. The observed influence of the
light and thermal conditions of the history of the sample on the magnitude of the
thermal emf is thought to be due to the presence of a considerable number of electron
traps. The concentration of free charge carriers was estimated from the thermal enif.
It is concluded that the decrease in the concentration of impurity carriors is due to
:the specific property of semiconductors with a defect lattice of depressing the elec-
itric activity of impurities. Orig. art. hass 5 figures and 3 formulas.
SUB CODEIII;O/ SUBM DAT&I 04JU165/ ORIG R&FI 014/ OTH RUS 003
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ZC NR, 028296 SOURCE CODEs UR/0363/66/002/006/0997/1000
AUTHORa Palatnik, L. S.; Sorokin, V. K.
ORGI Scientific Research Institute of Basic Chemiatry, Kharkov (Nauohno-isslodovatel'-
skly TENTITUT osnovnoy khimll)
1ITLES Eff ct of substrate on the concentration and sign of current carrierB in nzle
films ( I .-~ )
SOURCE: AN SSSR. Izvestiya. Noorganichoskiye materialy, v. 2, no. 6, 1966, 997-looo
TOPIC TAGGS: lead compound, telluride, semiconducting film, semiconductor carrier
.1B5TR:XT: Polycrystalline and single-crystal PbTo condensates 2-5 ~L thick were ob-
tainod on glass, N&C`l, and KCI, and the sign of the current carriers and their concGn-
tration in these films were studied as functionsof the conditions of oriented growth
and structure for-mod. It was found that In PbTo films containing a 0.5 wt. % eycess
of tellurium, p-type conductivIty is retained up to 2500C and above. An anomai-ouz;ly
high electron concentration Indicating an enrichment of the film with the metallic
component appears only in a nArrow tem*Derature range at 270-~001C. The relationship
between this effect and the change in the type of formation of nuclei and also the
change from oriented to unoriontod growth was demonstrated. The anomalously high en-
richment of the film with the metallic component (load) is the result of decomposition
.(fractionation) of the film material during the Intense mass transfer over the sub-
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strata due to the reavaporation and recondansation of PbTe molecules. "ITie change o' ,'"
the composition in the film PbTejj(100)NaC1 is appearently characteristic of other
semiconducting oompounds as well ; this change substantially contributes to the drop In
the reproducibility of the electric properties of the films. Orig. art. hasi 4 fig-
ures,
SUB COD91 20/ SUBM DATEI 04Aug65/ ORIG REF1 006/ OTH REF? 015
d 2/2 11,, r
0
S

L -j 0Z 0 M
A
C NR. AP6030980 SOURCE CODES 0181/66/008/009/2795/2796
C UR/
AUTHORt Palatnik, L. S.; Sorokin, V. K.
ORGS Kharkov Polytechnic Institute im. V. I. Lenin (Khar'kovskiy politekhnicheskly
instiTU7_ 1
TTITIZ-9 Effect of substrate on the photoorif In CdTq) filmd)
SOURCES Fizika tverdogo tela, v. 8, no. 9, 1966, 2791;-2796
TOPIC TAGS: photo emf, eadraium telluride, aluminum oxid,.:)
I"L.STRACTI The article reports preliminary data on the effect of sinrlo-cx-ys'L~.!
sz,pphire ("d20`3) substrate on the anomalously high photovoltaL;6 (Ap'l) in L~ITO fil--15.
Fi.g. 1 shows the deDendence of APV on the toamerature and typo of sij*bstrato. The
singlo-crystal leucosapphire stibstrate with axis c in the rlane of the
plate substantially affects LPV in ~A'Le. Ina a6so7 auto value of the r,ho'oo-if in tria
Cd7e film deposited on A1203 is 3-5 times groater ihan in tho filn on 1,1~25s. Ina 0?,-
fact of the singlo-cr-ystal substrato is partieiilarly nianii'ont In tho IW-2000C r~,n- ' $.
Tr, tho tempo ra ture ruiW where thr) prenarL,~(jn i~, carried oiit and whorl 1-r-A tj-'tx~ial
~rovth of CdTo on A1203 determinns the sizo Of b10Ck3 aw~ th.-) pha5-,, corr.,_S~~_
a photooffact is observed that cons iclera:) Ly oxceeds the wlilic.,l Ci,.,l 00
t~-Inod under the same conditions on a glass substrate. Orig. art. hasi I fig~ure.
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ACC NRj AP6o3og8o
Fig. 1. Dgpendence Of APV on temperature of
substrate. 1 - CdTc on A12c~; 2 - CdTe on
glass.
ZC
.700
SUB CODE: 20/ SUBM DATEI 02Apr66/ ORIG REF: 003/ OTH REF& 002
-.Cord--?12

I
at 0643 7 -6 1 m t , /ii~? ! JD
ACC NR: AP6026714 SOURQ,' CODFi - UR/6181/66/008/008/2W34/2486
AUTHOR: Kosevich, V. if.; Palatnikp L. S.; Moskalev, V. I-,.
ORG: idiarkov Polytechnic Institute im. V. I. Lenin (Khar'kovskiy politakhnicheakiy
institutF- 11
TITISI Distribution of growth microstoDs on faces of NaCl crystals
SOURCES iizika tverdogo tela, v. 9, no. A, 191-~",, 24,94-24P,6
TOPIC TAG3t sodium chloride, sinFlo cr-,Istal r.ro-Ali
A~57RACT: Ille d ribution of on ~60'4) races of .;a3l crysta!7, ,I~b
On single -crystaAayers grown by vacuu-. on ';aCI sinw- -1 crystals. -*n
+--- --- ' , ~ s varin* batwonnl'~ ;%,
len,peraturo Ts of trIe sin7le-c.-,,stal .9--itstratef, a d and, L4'C'-.
rr, A
UI'o;,th microstens or unimoloclilar wero -,r~tlh an aleAron cras -o-
using decoration with j7ol~~ -.iarticl na~in-ri ai,ia or a snooth 5;~irf'aco Of
lnicroste~)S) S,I,, was usod for a of 11.~io distribution of --~Iic~rosttj:,s. -:0
a 0 W -A A/Iric was
Ox-)er~-iorital dopendence of S, on Ts Ior a conl,,Yisation r t
MIned, an,~ 5rr, was evaluated theoreticallv. -.he ex-perimen'al data s-ow i.hat t'-.u
o
f
'~aGl crygtals in the 1~0-45COC ranz~e is controlled orimarily by ?rocosses o'
face migration of molecules. The remaining quantitative characteristic3 of
tribution of microsteps are directly related to Sm: thusp the mean distance between
the microsteps 0-3 V-S-m, and the area of the growth microfigure ~~- 15 Szn- 7r,9
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critical condition determining the size of a growth microfigure is that the free area
between the microsteps be close to Sm. Orig. art. has: Z figures and 2 formulas.
SUB CODE: 20/ SUBM DAM IIFeb66/ OAIG RZF: 0021 OTH REFS 002
i
!~ ca,,d 21244,~,

Z1.

PALATNIK, L.S,.; F'YACHENKO, 5.5.j 11 'IN';K! , II.I.; Vlj'()Vlf'.. I.[).
E I-) -I. ron micre)s a -q-,, nr r -)pp,~r -in r,-wjm ( -nlon-, a t-,. i '.z. :~jf It. ..
metall~ved. 18 rj,).3'46d-.,.6-,+ S 164. ( ~A I ", t I "
- Y har I kovs hiy rK) 1 ~ te k mo i c nri z- n 11 y i r.;, *1 1 tU t ; M(-- r, i ~e -) 1 ria .

?kLATN-'F,
A. Kharikovs 4 y
akadernijisz, S.A.Vekshinskim.

AkCd-NR, AP60326A SOURCE-CODE:* Uii/0126/66/0022/0011/01,~j/~~.~)-l~
AUTHOR: Fedorov, G. V.; Palatnik, L. S.; Dudkin, V. A.
............
ORG: Kharkov Polytechnical Institute im. V. I. Lenin (Kiiar'kovokiy
institut)
TITLE: The effect of the type of vaporization on the structure and properties Gf Ai
and Cu vacuum condensates
SOURCE: Fizika metallov i metallovedeniye, v. 22, no. 3. 1966, 400-403
TOPIC TAGS: aluminum plating, copper coating, metal vapor deposition, metal p:~ysical
property, metal recrystallization
ABSTRACT: The authors carried out comparative tests on copper and aluminum vac-.=.
condensates made by the crucible and noncrucible methods. It was shown that t"le
method of vaporization has a considerable effect on the structure and proper-~_J'es of
the condensates. Rapid recrystallization occurs at room temperatures in copper con-
densates made by the noncrucible metbod. Recrystallization is retarded by impur~Jtles
in crucible-produced condensates. The noncrucible method consisted of using tine elec-
trodynamic interaction effect of induced eddy currents with a high frequency field
the vaporized metal. The microstructure and microhardness of the condensates was
studied under various loads and the width of interference lines (400) Cu and (420) A,!.-
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AM NR, AP603261B
was measured on the DRON-1 unit. It was shown that the physico-mechanic&! prc,~erties
of the condensates are a function both of block recrystallization and of var.Jat-ko.%S
in relaxation of the crystal substructure. Orig. art. has: 2 figures.
SUB CODE: 11, 07/ SUBM DATE: 23Feb66/ ORIG REF: 009/ OTH REF: oo4
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1.,'.-,'T(m)/EWP(t)/ETI IJP(C) J D/INI
ACC 1N.3, AP6027766 SOURCL COUDE; Ult/Ol~L'6/66/(j22/001/0058/0065
A'U'111OR: palataik. L. S.; J-300*C), which provides the conditions for rapid correction of defects in the crystalline
structure of these monocrystals. Considering the distinctness of mosaic relief on the surface
of Be films, it may be assumed that these lamellar hexahedral monocrystals of Be, forming on
C,,d 3- /4

ACC NR- AP7002744
condensation of its vapors in the presenct: of considerable supersaturation--
k
A/sec and T s ~,300-600'C) represent the realization of the case where a layer hangs sus-
pended above t1he crystal surface. The existence of an "atmosphere', of condensing atoms above
the film surface apparently is a prerequisite for the formation of lamellar iionocrystals and
accounts for their absence when T.