SCIENTIFIC ABSTRACT NESHPOR, V.S. - NESIC, B.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001136620006-6
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: January 3, 2017
• Document Release Date: August 1, 2000
• Sequence Number: 6
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

27992
S/194J61/000/004/035/052
Alloys of rare metals... D266/D302
function and slow evaporation which shows the prospect of using
them as thermionic emitters. Their disadvantage is the small elec-
trical resistance which makes their heating difficult. This proper-
ty can be considerably improved by dissolving ceriumboride in them
which leads to a solid solution of high electric resistance preser-
ving the thermoelectric properties of the original borides. rAb-
stracter's note: Complete translation2
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3/081/61/000/020/009/089
B140101
AUTRORi
TITLEs Physical properties of notal-lik* compounds
PIRIODIOALs Reforstlynyy shurnal# Xhimlyaj no# 20j 19619 32j abstract
202214 (Tro Re4inars, po shamtoykiAm asterialan. (In-t
metal'okeramtki i &Veto. splavov.0 #SSRO no. 5). 11yev,
19601 5 - 14)
TEM A review of physical ftoperties of metali-Lika compounds (Nd)(002-
pounds of transition metals with B# 0# So and St) is given, On the
strength of their strMaturejtwo types of NO are distinguishade Inter-
dtitial structures with tightly packed astal Mons# &n& compounle with
more complex structure displaying besides metal,- metalloid bonds also
~ond*betwosn n*tallold atonso Several conclusions concerning the
,electronic stracture of 94 were drawn an the basis of studies of eleatro.
physical properties# Uperizental dkta# theoretical calculations of the
interatomic intsrqotion~vnorgyt stability of bonds with NO and some rules
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3/08 61/000/020/009/089
Physical properties of metal-likoo., B145YBIOI
concerning the physi o mechanical properties of 90 are discussed. Ihore
are 29 references# rAbstraoter's notes Complete translation .1
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S/O~'8/61/000/007/054/086
60 AOO!/AIOI
AUMORS-. Sansonov, G.V., Neshoor- V S.
TITTE: On the problem of magnetic properties of metal-like oompaunds
PERIODICALt Referati-vnyyzhurnal. Fizika, no. 7,, 1961, 2B2, abst-ract 7E472 (V
eb. "Vopr. poroshk. metallurgli i prochnosti materialov", no. 8,
Klyey, AN UkrSSR, 1960, 90 -.98)
TEXTt The rewalts of investigating magnetic properties of compounds of
transition elements 41~h 0, N, B a.-A Si make it possible to judge on the nature
of interatomic bonds in these compounds. The data known in literature on mole-
cular susceptibility Z M and magnetic moment/kef of metallia ions are presented.
The 7-M and 14,ef values of the studied compoxids, reduced in comparison with the
values of the p2xre mstaI3, indicate the formation in these compounds of a collec-
tive of electrons filling the overlapped dsp- band in the crjatal. The reduc-
tion degree of,-t is redated to the ionization 'potential magnitude of the metal-
m
loid. In the case of hnxabcridss of rare earths there is no decrease of IX_M..
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27756
S)". /FI/OW,'W77/C54rv86
On the problem of magnetic properticre AOOIIAIOI
.1
sinoe the inoompiete 4f-shAll is zoreened by outer 6a- and 54-e'eotrona. .'Mo
data are presented on temperature dependenie of IXM in hexevvrides of rart- eariLs,
as well as on the concentration of -x m for some carbides,, borldes and
nitridea.
L. Boyarskly
[Abstracter'a ncte:
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SIMJ601602 609/025/036
f, 73 B0041B056
AUTHORS: Reshpor, V. S., Samsonovp G. V.
TITLE:~ Investigation of the.Electrioal Conductivitzlof silicides
of the Transition met =6
PERIODICAL: Fizika tverdogo telar 1560, Vol. 2, go. go pp. 2202 - 2209
_TEXT: kreport is given on the potentiometric measurement of the speci-
fic ele,--tric resistance of sili-cides of d- and fd-metals of groups
ZY -.VIII of the periodic system as a function of their silicon content.
The results obtain6d are given in a table. The temperature dependence
of the electric resistance was measured on the disilicidea of Ti, Mb,
Wy~ No, Re, and La, as well as on ailicides of No with different Si-con-
tent$ and on partly LI-substituted Si (Figs- 1,2)- Fige 3 shows the
electric resistance of LaSi as a function of temperature, and Fig- 4
2
the electric reoistande,of disilicidea of transition metals of groups V~
IT-V1. as a function of the acceptor properties IlRed, where
ff. ia.the main quantum number of the d-shell of the metal atom, and n dig

84084
Investigation of the Electrical Conductivity S/181./60/002/009/025/036
of Silicides of the Transition Metals B004/BO56
4 figures, 1 table, and 24 references: 17 Soviet, I US, 2 British,
1 German, and 1 Australian.
ASSOCIATION: Institut metallokeramiki i spetsiallnykh splavov AN USSR,
Kiyev (Institute of Powder Metallurgy and Special Alloys
of the AS UkrSSR, Kiyev)
SUBMITTED: November 9, 1959
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NESHFORo V.3 MCHENKOv T.r. (9takahenkol.T.F.1; LIVOV, S.N.[&=onort
4me electroph7vical, properties of t1timius compounds with non-
metallic eleumts- of the'foufth grow,Pf the periodic table.
Ukr. f1se-Shmr, 5 ho-5039-W " 'AO- OUM 14:3)
2 Institut metanokinUmEd i opetsialtnykb mp2avov AW USSR I,
924doneldy pedagogichdsidy institute Im. NA. Krupskdy.
(Titaniun compmda-Zlectric properties)
61

NWIJP2&,-~KOROLENKO, YU.I.p KARALINIK, S.H.
Studying the characteristic alworption. of X radiation frm
transitional elements of the first group by their silicides.
Ukr.fiz.zhur. 5m.6:826-864 N-D 160. (MIRA 14:4)
1. Klyevakiy ordena Unina gosuderstvennyy universitet im. T. G.
Sfw.'chanko i Inatitut setallokermiki i spetsiallnykh splavov AN
(Absorption)
(Transition metal silicides)

80&~
24-77001 810801601033100.510011008
AWMORS: Neshpor, V.S., Samsonov, G.V.
TITLE: The.Investigation of the Conditions for the Silicon-Thermal
Production of Lanthanuto Silicide and Some of Its Properties
PERIODICAL: Zhurnal prikladnoy khlmll, 19W.. ~61 330 No 5, PP 993 - 1001
TMz The condition, of obtainlnA; LaSi2 by reduction of the metal
oxide with silicon wis studied by the strain gauge method, developed
earlier by me of the authors (Refs 2. 31, for application to carbides
and borides of transitional metals. Kixtures of lanthanum and silicon
oxide powders were-subjeoted to heating In the vacuum at temperatures
from 1,200 Jp 106000C. A toVerature increase beyond 1,6000C causes
melting and volatilization of the reaction products. At lower temperatures
LaS1 Is fa-zued wh1ah reacts with an ercess of silicon and is partially trans-
foiied to LaSI2. At higher twperattwes La.20 Is directly reduced to di-
siliaide. Lanthanum dIsIlloide iu the form 01 a practical one-phase pro-
duct Is obtained at 1,500oC and at an initial vacuum of 101~ mm Hg In the
furnace. The approximate values of the formation heats of lanthanum mono-
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8OW4
S/oEb/6D/033/005/001/008
The ruvest1gation of the Conditions for the Silicon-Thermal Production of
Lanthanum Silloide and Some of Its Properties
and dIsIlicIde are 64 and 52 kca2/mole, respectively, which Is slailar to
the formation heat of CeS1 The microhardne a of LeSI Is 324 kg/mm2, which
is lower than the ndoroh;xes's of the diallMdes of ;9e transitional metais
of the groups 37-1n of the Periodic System, as well as that of pure silicon.
There am, however, some seetiona of the phase with a gray color, having a
miorchardness of 626 kg/mM2. The low miarchardness is due to the loosening
effect of lanthanum atoms enclosed In the empty spaces of the three-dimensional
lattice of the bonds between the silicon atoms. The absolute thermo-emf is
negative In the temperature range Investigated and passes through a minimum at
5oo - WoO(i. Haii's coustant of LaSt 2 at room temperature is negative and has
a value of 17.5-10--5 cm57coulomb.
Thereare: 6 graphs, I diagram, 2 tables and 15 references, 11 Soviet, 2 English,
1 American and 1 German.
SUBMMMS August 9, 1959
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82519
3/020/60/133/04/17/031
t7 0 B019/B060
AUTHORSi Neshpor, V. S., Pamsonov, G. V.
TITLEt Electric# ThermoeleotricNnd GalvanomagnoticiProperties
of Silicides 4,kc fTransition Metals
f
PERIODICALs Doklady Akademii nauk SSSR, 1960, Vol. 133, go. 4,
PP- 817-820
TEXTs The authors studied the electric resistivity, the thermo-emf, and
the Hall affect of eilicides of a number of transition metals from
group IV to VII of the periodic systems as well as of lanthanum, cerium,
and praseodymium. Fig. 1 shows graphically the electric resistivity of
the silicides as a function of the silicon atom content. Depending on
the character of this function the authors divide silicides into two
groupst the first group comprises the silioides of Ti1q'1Zr-1V,-1Ta"W -1
zj
and
.qjAin which the resistance of the intermediate phases drops with
increasing SiNontent. The second group includes the silicides of
L,1 . in which the electric resistivity of the Intermediate
'~Ln
phases rises with increasing Si content. The silicides of the first group
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82519
Electric, Thermoelectric, and Galvanomagnatic S/020/60/133/04/17/031
Properties of Silicides of Transition Metals B019/BO60
have metallic conductivity, and those of the second group possess semi-
conductor properties, such as a negative temperature coefficient of
electric resistivity and a high thermo-emf. The respective values are
tabulated in Table 1. The character of the interatomic bond in the two
groups is inferred. It was found by measuring the Hall constants and the
thermo-emf coefficients that silicides, unlike transition metals which
essentially possess p-type conductivity, with the exception of molybdenum
and tungsten disilicides, possess n-type conductivity, just like borides
(Ref. 7) as well as carbides and nitrides in titanium compounds. Details
of the conductivity and of the magnetic properties are discussed, and the
specific character of electron motion in the semiconductor is dealt with.
Most of the measurements were oonducted by the authors with the aid of
apparatus belonging to the Chair of Physics at the Khersonskiy
podagogi4cheski,y inst-itut (Kherson Pedagogical Institute) with the
assistance of 3. R. L'v v, vl,_~ I Ad
~~ko and a. Eaghmy. The authors
express their gratitude to the aforementioned persons for their help.
There are 2 figures, 1 table, and 16 referenoess 11 Soviet, I Australian,
2 US, and 2 German.
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62519
Electric, Theraoqlectric, and Galvanomagnetic S/02OJ60/133/04/17/031
Properties of Silicides of Transition Metals BOIq/BO60
ASSOCIATIONt Institut
Akademii metallokeramiki i spetsiallnykh spalvov
nauk SSSR (Institute of Powder Metallurgy and
Special Alloys of the Academy of Sciences, USSR)
PRESMEDs March 25, 1960, by S. A. Vekshinakiy, Academician
SUBMITTEN February 30, 1960
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83553
S/02o/60/134/001/004/021
t/' 1) 6 0 0 ay,4-0 2 B019/BO60
AUTHORS: Vaynahteyn, E. Ye., Zhurakovskiy, Ye. A Neshpor, V. S.,
Samsonov, G. V.
TITLE: The Fine Structure of X-Ray K-Absorption Spectr) and the
Hall Effect.in Vanadium Silicides
PERIODICAL: Doklady Aka emii nauk SSSR, 1960, Vol. 134, No. 1,
pp. 68-70
TEXT: The authors studied the fine structure of X-ray K-absorption
spectra of vanadium and its silicides V3S'1 V5S'3, and VSi2. The crystal
structure of these compounds and the production of silicides are
discussed in the introduction. The free silicon content in silicides
did not exceed 0'.6%. The apparatus has already been described. Fig. I
shows the fine structures of the K-absorption edges of vanadium, its
above-mentioned siliciden, and V205. The Hall effect of these three
silicides and vanadium was likewise determined. In accordance with the
n-type conductivity of the silicides they possess a negative Hall
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83553
The Fine Structure.of X-Ray K-Absorption 3/020J60/134/001/004/021
spectra and the Hall Effect in Vanadium B019/BO60
Silicides
constantf while metallic Vanadium, in accordance with its p-type
conductivityi has a positive Hall constant. The effective carrier
concentration ng and its gall mobility were determined with the aid of
the Hall constants obtained. Results are compiled in Table 1. As may be
seen from Fig. 1, the K-absorption edge undergoes a considerable and
regular alteration in the case of increasing silicon content. Only that
point of the edge remains unchangedp which characterizes the position of
the original absorption range in the energy.spectrum. The absorption
maximum shifts toward higher energies on a transition of metallic
vanadium to the silicides with rising Si content, and on a further
.transition to V205- Owing to the invariable position of the original
absorption range, the shift of the maximum leads to a widening of the
edge and, hencet causes the "mean point'! of-the.K-edge to shift toward
shorter wavelengths. With increasing Si content the width of the K-edge
approaches that of 720%, which is a compound with a large part of ionic
bond. This indicates a~polarization of the metal atoms in the silicon-
rich silicides and a heteropolar component in metal-silicon compounds.
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83553
The Fine Structure of X-Ray K-Absorption S/020/60/134/001/004/021
Spectra and the Hall Effect in Vanadium Boig/Bo6o
Silicides
PRESENTED: April~29, ig6o,-by A. P. Vinagradov,-Acedemician q"
SUBMITTED: April 29, 1960
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awl 0
S/02Y60/134/006/013/031
tlzoiy; B019 B067
AUTHORS- Meshpor, V. S and Samsonov, G. V.,
------------------------ k
TITLEx Study of the Hall EffectNin the Silicides of Transition
metals
PERIODICAL: Doklady Akademii nauk 335R, 1960, Vol; '134, No. 6,
pp. 1337 - 1338
TEXT# The authors measured the Hall coafficientv and calculAtod the
carrier concentration and theIr Hall mobility in silicides of transition
metals of different silicon content. The production of the samples and the
methods of measurement were described in Refs. 1, 2, and 3. The results of
measurements made on 30 silicides are summarized in Table 1. From these
values the authors conclude the followingi 1) A reduction of the carrier
concentration is observed with increasing atomic number of the mets1lic
component of the silicide. This is probably related to the strengthening
of the covalent bonds. 2) Host of the silicides investigated are metallic
conductors. 3) The disilicides of rhanium and chromium have low carrier
concentrations and are impurity semiconductors at room temperature. 4) The
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81670
Study of the Hall Effect in the Silicides of 5/020/60/134/006r013/031
Transition Metals BO'19/BO67
carrier concentration of the silicides of the transition metals of the
first period and of the No and Rh-silicides decreases with increasing
silicon content in the phase M xSi Y, 5) In the metallic compounds of the
secotd period (Zr-Si) and the third period (Ta-Si), an increase in the
carrier concentration is observed on the transition from low to high
pilioides~ with the carrier mobility being reduced. 6) With increasing
atomic number of metallic disilicides, a transition is observed from
r-type conductivity to p-type conductivity. Several silicides were found
to be. ferromagnetic. The Hall coefficients of eight ferromagnetic
disilicides are given in Table 2. There are 2 tables and 5 Soviet refer-
ences.
ASSOCIATIONs Institut metallokeramiki i spetsiallnykh splavov Akademii
nauk USSR*(Institute for Powder Metallurgy and Special
PRESENTEDt June 8, !960j by 5, A.. Vekshinskiy, Academician
SUBMITTFADs June 1, 1960
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NESHPOR, V. S.
Cand Tech Sci - (diss) "Study of conditions of the Droduction
and several physical properties of silicides of transition metals."
Kiev,, 1961. 16 pp; 2 pp tables; (Ministry of Higher and Secondary
Specialist Education Ukrainian SSR, Kiev Order of Lenin Polytechnic
Inst); 180 copies; price not given; list of author's works on p 16
(15 entries); (KL, 10-6l.sup, 217)

NESHPOR, V.S.
Crystalline structure of monozilicides of transition
Kristalloa~affU 6 no-3:466--469 Hy-Je '61- (MrRA 14191
1. Inatitut metallokeramiki i spetsiallnykh splavov AN USSR.
(Silicides) (Transition notals) (Crystal lattices)

MOO (11.cffl
15-,-229-0 9-909, 1275, 104111111$, 9/126/6.t/OIL/004/023/023
9021/9435
AUTHORSt _Nes~p?E.L V.S. and Sameonave GOVO
TITLE% Rhonium Misilicide as a Now Refractory SemleandUctor
PERIODICAL: Fizika metallov I metallovedoniye, 1961, Vol.11, No.4j
pp.638-64o
TEXTt The electrical conductivity and thermo e-.a.f. Of RsSL2
were studied at 20 to 10000C. The Hall-effect, the hardness and
oxidation resistance In air were also investigated'. Rhenium
disilicido was-propared'by sintering the stoichlometric mixture of
powders of rhantum and silicon in a tube furnace at L3000C for
3 hours using an argon atmosphere. X-ray studies show*d that no
lines other than those of ReS12 were present. The ReSL2 was then
ground into powder and samples were prepared by hot pressing at
1600*C and 200 kg/cm2 In argon. They were annealed'for 10 hours
at 1400*C and slowly cooled to room temperature. Metallographic
analysis showed only one phase which had a micrahardnons of'
1500 + 40 kg/mW2. The figure shows the relation between log.
elect;:ical resistance log p (p In ohm cm) (curve 1) and thermo
e.m.f. ILV/d*g (curve 2) with temperature *K. It can be seen
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21357
S/126/61/011/004/023/023
Rhonjum Disilicide Z021-/E435
that RGS12 is a semiconductor. The width of the forbidden
zone is about 0.13 OV. The electrical resistance at room
temperature is about 102 ohm-lem7lo At this temperature the H
coefficient has a Positive sign. The conductivity is of the ho e
a. The concentration of admixture current carriers in about
ti
I an-3. The resistance to oxidation was tested at 1400*C.
The change in weight during oxidation stops after 30 min oxidation,
because of the protective film of silica forwed~on the surface.
The film had a coarse grained polyhedr&JL structure. The
electrical resistance of the sample during oxidation did not
change, showing that oxygen was not penetrating the sample.
ReSL2 has a totragonal structure with a - 3.131 and c a 7.676
There are I figure and 13 references' 7 Soviet and 6 non-Soviet.
ASSOCIATIONs Institut metallokeromiki i spetaialgnykh splavov
AN UkrSSR (Institute of Powder Metallurgy and Special
Alloys AS UkrSSR)
SUBMITTED*: juiy 16, ig6o
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S/849/6a/000/000/007/016
Aoo6/Alol
AUTHOR: Neshpor, V. S.
TITLE: X-ray spectra and the interatomic bond in solid metal-like compourds
SOURCE: Vysokotemperaturnyye metalloker'amicheskfye materialy. Inst. Metallo-
ker. i spets. spl. AN Ukr.SSR, Kiev, Izdrvo All Ukr.SSR, 1962, 46
74
WIT: An attempt is made to establish a qualitative correlation between
the basic physical properties and structure of metal-like compounds and the
state of their metallic components, determined by the nature of their soft X-ray
spectra. Ti, V, Nb, Cr and Mo carbides, nitrides, borides, and silicides were
investigated. Many of the carbides and nitrides are associated with the group
of interstition phases with six-fold coordination of metal atoms around meta-11rdd
atoms and of metalloid around metal atoms, so that a Me6X or KeX6 molecule with
six oriented Me-X bonds of cr-nature can be singled out in the crystal (Figure 2).
An analysic of emission and absorption spectra shows a substantial analogy in
the state of metal atoms in carbides and r-Itrides. It is possible that, polari-
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S/849/62/000/000/007/016
X-ray spectra and the... Aoo6/Aiol
zation of atom shells of metals takes place and that part of the electrons pass;
over'to d-symmetry levels of the metalloid. This concept is in agreement with
regulariti es in the changes of physica. 1 propertleaof these compounds, dependi
on, the acceptor capacity of metal: atont-,:sheUa,# ?and, -the ionization. potential. of
the metalloid previously established by Umanskiy and Samsonov. Their interpre-
tation of reduced electric resistivity and Increased strength of atomic bonds
may be maintained, if the shifting of the gravity center of the common cloud of
interchanging electrons in 1-bonds of fle-X is considered to be the result of a
donor acceptor Interaction, connected ifith.deficient d-shells of transition
metal atoms, but not as a result of tho full!transition of electrons from the I
metalloid to the metal. Transition metall borides do not show Interstition pha-
TI,
ses, but 'a normal covalent nature of bond. Like carbides and nitrides of
they possess electronic conductivity. The nature,of d-states of metal atoms in
borides does not differ very much from that-of pure metals, as to the degree of
completeness and the nature of hybridization with a- and p-states. It Is pos-
sible that the d-states of metal are partly,filled up with boron electrons; this
is in agreement with the division of the emission band Into two components, if
this division is connected with the division of.d-state into 2 groups. The
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0
AUTHORS:
14243h
3/849/62/000/000/011/016
A0061AI01
Kudintseva, 0. A., Neshpor, V. S., Samsonov, 0. V., Tsarev, B. M.,
Paderno, Yu. B.
TITLE: Thermo-emission properties of*scandium and gadollnium borldes
SOURCM Vysokotemperaturnyye metallokeramicheakiye materialy, Inst.
metalloker. I spets. spl. AN Ukr.SSR, Kiev, Izd-vo AN Ukr. SSR.
1962, 109 - 112
TEXT% The authors investigated the eleatronle emission of scandium and
gadolinium borides produced by Samsonovts vacuum thermal method. The thermo-
-electronic emission of the borldes was studied In.expertmental diodes with
cylindrical anodes and tantalum cathodus Values of current efficiency and of
constant A In the emission equation I = AT2exp were obtained by measur-
ing the emission. These data are tabulated. It,was found that the regularities
lestablished by Samsonov for some physical.properties in the d1borlde series of
scandium- 'titanium-vanadium-chromium ars.also applicable to the work,funation of
electrona (2.9; 3.88; 3.95; 3.36 respeatively). Samsonov has stated that their
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000/011/016
S/8149/62/GW/
Thermo-emission properties of scandium and... A0061AI01
properties of scandium borides are mainly predetermined by the state of 4,a-elec-
trons. The dominant part of 4s-electrons In thla case is confirmed. Low values
of work function of gadolinium borlde ele-atrons; in the borlde series of rare-
-earth metals can be explained by th*,:Vr.~a4n;O-_pf._on9. substantially-. free 5d-elea,
tron and a stable half-filled V-shell", niiiie,--m-aie I table and I flVre.

3/849/62/000/000/OIP-/016
A0061AI01
AUTHORS,: Neshpor, V. S., Samsonov, 0. V.
TITLE- Electric properties of molybdenum silicides
SOURCE- Vysokotemperaturnyye metallokeramicheskiye materialy, Inst.
metalloker. I spets. spl.- AN Ukr. SSR., Kiev. Izd-vo AN U.kr. SSR.,
1962, 113 - 119
TEXT: For the purpose of studying the effect of silicon concentration
and structure upon the electric properties of silicides, the authors investigated
the temperature dependence of electric resistivity; thermo-emf and the Hall effect
of molybdenum silicides. Molybdenum silicide powders Mo 3Si' Mo 5Si3 and MoSi2
were prepared by sintering pressed mixtures of components In argon atmosphere.
Specimens, 6 win in diameter and 15 mm high, were not pressed. . Their residual
porosity was 2 - 8%. The temperature dependence of electric resistivity and
0
'thermo-emf of the compounds were determined for a 250 - 1300 K temperature range.,
The measured differential thermo-emf was converted to an absolute value using
the temperature dependence of absolute thermo-emf of a platinum comparison elec-
trodo for MoS1 2 and of an alumel electrode for Mo 531 3' The Hall constants were
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3/849/62/000/OW/012/016
Electric properties of molybdenum silicides Aoo6/Aioi
measured in a constant magnetic flux of 12,000 oersted strength at about
300 amp/am2 current density. Hall constants and specific resistivity of Mo sili-
cides were measured at room temperature and from these values the effective con-
centrations of current carriers and Hall mobilities were calculated. As a result,
the metallic type of conductivity of the Investigated compounds was established.
The M63Si and Mo5Si3 silicides are electronic conductors, whereas MoSi 2 is a
hole conductor. The latter fact is In accordance with the result predicted by
If. Schenk and U. Dehlinger in 1956 on the basis of the quantum-mechanical cal-
culation of the energy spectrum for this compound. The probability of scattering
of current carriers in molybdenum metal and silicides Mo 3Si' Mo5So3 and MoSi2
are in a 1:20:20:1.5 ratio and their Hall mobilities In a 1:0.055:0.04:2.7 ratio.
This Indicates the high density of electronic states In the conductivity zones of
lower molybdenum silicides Mo3St and Me531, 3' It is shown that the lower molybde-
num silicides are similar to(7'-phases In binary systems of transition metals as.
regards both their crystalline properties andelectronic structure. The ordered'
substitution of a portion of silicon atoms in-molybdenum disilicide by aluminum,
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s/849/62/boo/bw/o i 2/b 16
Electric properties of molybdenum allicides A0061AI01
having lower valences, causes an Increase In',both electric resistivity and its
temperature coefficient. There are 2 f1gures and 3 tables..
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45256
S/226/62/000/006/003/016
E039/E535
AUTHORS: Neshpor, V.S..and Samsonov, G.V.
TITLE: On the electron structure of silicides
PERIODICAL: Pororhkovaya nietallurgiya. no.6 1962. 14-19
TEXT: The physical propertlr.,~ of the disilicides of the
transition metals are studied; the results-allow some generAl
conclusions to be drawn on the oli:ctron structure and the nature
of the interatomic bonds in silicl(les. The majority of the
silicides of the transition metals possess metallic conduct
which is of the same order as the transition metals (103-10 Q cm7'I..
Th-ese silicides also have an effective concentration of 29 urrnt -5
carriers which is comparable with that in the metals 10 -10 em
An examination of the magnetic susceptibility of,a number of .
silicides showed that many of them are diamagnetic and for thaw*
which ahowed paramagnetism it is significantly weaker than la the
corresponding transition metals. Semiconductor properties have
been found experimentally in the disilicides of chromium, iron,
manganese, rhanium and barium. From qualitative estimates of the
division of electron and hole conductivity the following ratio In
C4rd 1/2

On the electron structure of ... S/226/62/000/006/003/016
E039/E535
obtaineds R/(" =C'huh - O,ue' which follows from the theory of
conductivity and the Hall effect in solid bodies with two types
of current carrier. Here R in the Hall constant; o is the
specitfic electrical resistance; 0 It And 0 the specific electrical
conductivity possessed by holes and electrons and u .
-h and u the
mobility of holes and electrons. An examination of this ratio for
the Investigated silicides of the transition metalo'having less
than half filled d-zhells shows that the electron conductivity in
strengthened while in the case when the d-shell is more than half
filled the hole conductivity is strengthened. There are 2 figuires.
4fSSOCIATION: Institut metallokeramiki i spetsiallnykh splavov
AN USSR
(Institute of Metalceramics and Special Alloys
AS UkrSSR)
..SUBMITTEDt April 14, 1962
Card 2/2

KOVAW CHEIIKO, M.S.; NESHFOR, V.S.
Session of the Department of Technical Sciences of the Acade&7
of Sciences of the Ukrainian S,SIRO = prdrAew involving the
effect of nuclear radiatIons thetiwoperties of materials. Atom.
Wft-390 0 162 MIRA 15:9)
energ. 13 no./
Nter"Is, Effect ofr=Uation on-Congresses)
Ao

S/279/63/000/001/01.5/023
AUTHOR S-.
Neshpor,.
Samsonov, G*V,(Kiyev)
TITLE:
-Electrical and thermoelectrIcal
roperties of some
transition metal slillcides
PERIODIChL: AkA U
-demiya __Gtde1eniye
tekhnich-eskikh h4uk. ~jotdllurgiyA i gornoye delo.
TEXT; The effect -wSst-studied of tempekatureon the-electrical
res.istance.ofTi,S'2, ZrS,'2, NiSi2 and T'5S'3 silicides and on the
absolute differential thermoelectric potential of the TiS12, ZrSi
21
NiS12, ~IOSii, WS12'i Mo3Si, Mo5Si3 and CrSi silicides The
silicides were prepared by-sintering silica (99.98% ~ure)-with high
purity,metal powders by the'mothod previously described by
Q.V.Samsonov, et 91 (Ogneupory, no.2, 1958, 28:- Zhrn*neorg. khimii
V.4, 1939-,.2759),., X-ray analysis of the silicides so prepared

Card, 1/3-
S/279/63/000/001/015/023,:
Electrical-and thermoolectrical E040/E45i
and' about 800%
the Ti5Si ..-TiSig silicides feom' roomAemperaturo-to
but for.2e .-Silicidos ZrSi~ and. NiSU2 the relationship is linear
only above 200*C. . Differential thermalcoefficients of resistivity
were calculated:for all the silicides investigatedand their.,
-values compared with.the corresponding D-ebye.temperatures and

'AID ffr. 983-~5 5 J=e '
ELECTRIC AND THERMOELECTRIC PROPERTIES OF SILICIDES OF
TRANSITION METALS (USSR)
Neshpor, V. S., and V. L. -Yupko. Poroshkovaya metallurgiya, no. 2,
Mar-Z~r _1~53, -59. S/226/63/000/002/008/014
The tem-,ez-atura denendence of electric resistivity (in the 20-1000*C range) and
the'- -3 Ca
0 G* C ranae) of silicides of V (15. 9, 25. 2, and 51. 570
SO, 1vin ~3. 4, 23. 0, and 51. 01/a Si), and Fe (14. 2, 33. 1, and 50. Solo Si) and of
~ "/a Si) ICOS'2 (48- 90/* Si),
Co5si N13Si (13. 51vi- SO, M2~i (19. 1% SO, ZrSi2 (3 S. 501a
SO, TVS-_'~, (23. 9% SO, Re3Si, and ReSi.. has been studied at the Institute of Powder
Metallurgy and Special Alloys of the Ukrainian Academy of Sciences. Silicides
:were obtained by the synthesis of components; the sintered specimens were pre-
pared by hot compactinor. I-L-4croscopic examination and the x-ray diffraction pat-
terns showed the silicides to have a single-phase structure, except for CoySi.
Ni Si Ni.Si, and Re.Si, which had-inclusions of a second phase concentrated
3 8
along grain boundaries. The nature of the temperature dependence of the elec-
tric resistivity of MnSi2, Mn5SI3, and ReSt showed these silicides to be semicon-
ductors. The Fe.Si and Co, Si appeared' to be ferromagnetic semimetals. The
temperature dependence of 1he electric resistivity of all other silicides studied
card 1/.2

AM iir. 983-5 5 itne
EMCTRIC AND TM L=SECTRIC PEOPMTIES [Coat 1d] S/226/63/000/002/008/014
-was characteristic for metkii~ (i~nductors: the-increase of resistivity with tem-
perature was linear in V3S1, NizSi, and CoSi2, but nonlinear in all other silicides.
7be absolute magnitude of thermal eirif and its temperature dependence for most
silicides 'studied were characteristic for compounds with metallic conductivity.
,In general, the temperature dependence of thermal emf was nonlinear and had
mazdma, which indicates the presence of positive and negative current carriers.
The temperature dependence of thermal emf in FeSi2, MnSi2*, and ReSi2 was
characteristic for doped semiconductors., In general, with increasing relative.
.content of Si in the intermediate phases of Me-Si systems, the absolute values
of thermal emf increased and the nature of their temperature dependence became
more complex. This probably was caused by an increasing share of covalent
bond in -silicides and by their electron energy spectrum becoming more complex
with increasing Si content. Foe Re 3Si the thermal emi In the entire range of tem-
peratures tested was found to be zero, which makes this siRcide a prospective
material for high-temperature thermocouples. IMS I
Card 2/2

ACCESSION NR: AT4035159 8/0000/63/000/000/0022/0035
AUTHOR:, Samnonov,'G. V.; Neshpor, V. S.; Paderno. Yu. B.
TITLE: Preparation and properties of the dilicides of some rare-earth elements
SOURCE: 'AN MR. rhatitut geoWmit I analitichaskoy khtmil. Redkozemellay*ye
elemeaty* (Rare-earth elements). Moscow, lzd-vo AN 9,5SR, 1963, 22-35
TOPIC TAGS: rare earth element, rare earth, silicide, silicon, lanthanum, cerium,
yttrium, neodymium, scandlum
ABSTRACT: The reaction between silicon and the oxides of lanthanum, cerium, yttrium,
noodymium and scandium:
',Met0s + 7S1 2MeSfa.+ 3S10 (Me - Sc, Y, La, Nd).
ceot + 4S1 CeS12 +2SIO,
SqOs + 5S1 2ScSI + 3S10.
was investigated In a vacuum at high temperatures by determining the relationship between
SIO vapor presaure and reaction time at gradually Increasing temperatures. The variations
co,d 1/3

ACCESSION NR: AT4035159
in SiO pressure at different reaction temperatures and the variation in the chemical com-
position of the reaction products are also tabulated. In the case of La203, as the reaction
temperature increases, the amount of free silicon continuously decreases and becomes zero
at 1600C. At the same time, the lanthapum. content amount of bound silicon become close
to the theoretical for Uu9i02- X-ray diffraction patterns of the reaction products show that
at 1100-1400C Wl and Wi are formed, while at higher temperatures W12 is formed
directly. X-ray analysis of &e other reaction products showed that monophase CeS12 and
PrS12 were formed. At 1200-1500C, YSi is formed rather than YS12; over the temperature
range 1200-1400C, the k-ray diagrams show lines of yttrium oxide and free silicon, the
intensity of which weakens with increasing temperature. The composition of the siffelde
corresponding to the product containing no free silicon (obtained at. 1500C) can be written
ySil. 4. Theproduct thus contains some disilicide In addition to monesillotdo. The
chemical composition of the reaction products of neodymium oxide with silicon at different
temperatures shows that NdRIZ Is formed at a relatively low temperature, but that the
reduction Is not complete; on the x-ray diagrams, ND9% lines can be seen up to 1500C.
The products obtained at 1470 and 1580C are not homo7geneous. Gadolinium. disilicide was
prepared at 1000-ISOCC in a vacuum, and the possible preparation of scandium siticides
ScSj and ScSIZ was Investigated. Data are also given on the crystalline structure,
2/3
Card

ACCESSION NR: AT4636159
microbardness. thermal stability and electrical properties of the rare-earth silicides.
iOrig. art. has: 14 figures and 3 tables.
ASSOCIATION: Institut gookhWi I analiticheekoy khimil AN SSSR, (Entitute of Geo-
chemistry and Analytical Chandstry AN SSSR)
SUBMITTED: 310at63 DATE ACQ: 30Aprfi4 ENCL: 00
SUB CODE: IC NO REF SOV: 008 OTHER: 014
Card 3/3

/Y
The Second All-Union Conference on Rhenium. sponsored by the Institute of
Metallurgy imeni A. A. Baykov. Academy of Sciences USSR, and the State
Institute of Rare MetalA vlas held in Moscow 19- 21 November 1062. A total
of 335 representatives fro~m 83 scientific Institutions and industrial estab-
lishments participated. Among the reports presented were the following:
autoclave extraction of Re from Cu concentrates (A. P. Zelildnan and
A. A. Peredereyev); He extraction from the gaseous ph as 6 .(V. P.
Savrayev and N. I_ Peysakhov); recovery of He by sorption and ion In-
torchange W. 1. Bibikova, X. V._Illichenko, K B.. esLev. P
. I _1~94 _,-She
2nE2khadzhaX~Lva. V. V. Yermil C. S. Raimbikov. and M. 1.
Vilimono ). production of carbonyl Re (A. A.-Ginzburg); electrolytic
produqtion of high-purity Re and electroplating with Re (Z., M. Sominska
and Re coatings on refractory metals pro-a-u-c-ea-by thermal
dissociation of He chlorides(A. N. Zelikman andA. V. B Ms4Rik
tic deformation and thermon;echanic-altreatment. of Re (Y. qK); plas-
1._Xaravaytsi~v
and Yu. A. Sokolov); growth of Re single crystals and effect of 02 on their
projeriles _(Ye. -9. Savitskiy and G. Ye. Chuprikov); Re-TvTo. Re-W. and
*_~F__ -i-M A. T
Re-precious -metal alloys Ye. M - av~itskiy. Bd. __ylkj!La, and.E. B.
~~royMa, synthesis of Relifit-ricFei, phosphides, apd selenides
s n
(G. V. Sa s nov. V. A. Oboloncbik, and V. S, Neshpor), w'eldability of
i
Mo 2= lJoys W. V. D'P
~,_-=and R..'31W a _qhenko. Bj__~PMoozqv, and Q,_k J'I
lGaba )j now fields Of AiPliOgRon ro-rke and Re alloys (M- A, TWIdna..
a
thermoqoup~ez CS__X_
DV IWW)
2L_ G_.j_ ~.Llt P).
U63, PP'92-93

Air
AUTHORS:
TITLE:
PERIODICAL:
5/170J63/006/001/014/015
B108/B186
j2qhZ~,F~_V. 8,69 Barantneva, 1. G.
Investigation of the heat conductivity of the molybdenum
silicidea
Inzhenerno-fiziche;akiy zhurnal, 1. 60 no. 10 1363, 109-115'
TEXT: To improve and amplify the published data, the authors measured
the heat conductivities of Ko5Si, Mo5SiV and KoS12 at room temperature.-.
The measurements were made-under steady-state conditions. The small,
pressed cylindrical samples of 6-8 mm diametek and 10-12 mm heightt
heated by a copper cylinder, contained two 1-5-mm bores with thermocouples
to measure the temperature,gradient. Heat losses from the sample were
reduced by an asbestos insulation. ';The heat conduction due to frbe
carriers and the lattice heat/-dondue'tion were calculated. The latter
amounts to about half the total heat-conduotivilyland depends greatly on~-
the type of crystallization. This indicates thit"the interatomic bonds
possess an essential covalent component. After introducing a correction
Card 1/2

S/17 63/006/001/014/015
Investigation of the heat B108 166
for the pokosity of the samA16 the following re'slults were obtained:
He Si 95.0 cal.cm see degi. I go Si 52.0 cal.,cm. see deg HoSi
3 -1 5 5
116.5'cal.cm-i see deg-'. there are I figure a~d~2 tables.
A-00SOCIATION1 Institut metallokeramiki i opetsia'llnykh splavov AN USSRt
g. Kiyev (Insiitute.of Powder Metallurgy and Speoial Alloys
AS UkrSSR, Kijev)
SUBMITTED: q~ii 28, 1962
Card 2/2

,g2~~V~.S.-~~ZNICHENKO$ M.I.
28 no.3t.134,437 161. Am (KM 1682)
lo Institut met&Uoker-ild i spetsWInykh spla4ov AN UkrWR.
(Sillcides) (Mcpansida (fteat))
InvootAgating the thermal expwwion of certain silicI&E. Ogneupory

V. S.; -V*~ Le
Ion coiditl oal properties of
n of preparat ona and physi
barium disilicide'.
SWRCE: .2hurnal pr: adnoy khimii, v. 36., no. 5, 1963,, 1139-1142
TOPIC TAGS.' alke3ine earth- silicideaj, barium'disilicide, -barium disilicide
Preparation, semiconductor,, refractory, micx.ohardness, melting point, thermal
expansion wetficient, thaml conductivity, thermoelectric paver, oxidation
ABSTRACTV The preparation and'physical pro:perties of barium disilicide have
been studied because of its semiconductor pToperties. BaSi sub 2 vas prepared
in a vw= at 1300-4420C by reduction of loari-am, oxide with silicon. Chemical
analysis indicated that at 1420C the composition of BaSi wab 2 is close to the
stoichiometric; *t higher.tem~pemtures sublimaition or dissociation probably
occura. X-ray avalysis shaved that line goaltion and intensity corresponds to
the BaSisub-2 crystalline structure. Unresolved lines vhich did not correspond
Cord
---------- ------------ -------------
...........

L ",O~-6j-
M-CMIT., P3002705.
to the cx7stalline structures of BaSI sub 2,, BaO., or Si were also,present.
Compacted specimens, obtained in an argon atmosphere by hot pressing,, vere
blaack wl a metallic luster. Metallographic analysis of these specimens showed
a composition primarily of single-phase polyhedralgrains with microhardness of
930 + or . 50g/mm sup 2. Melting point, measured with a pyrameter, vas 1850
+ or - Soo, Wd the expansion coefficient was 8.2(10 Sup -6)/G at
thertul
2o- 65oc and 8.6(lo sup 46 at 6soft-nooc. nerml conductivity vu about
3.7Z10 SUP -3)c e Al resistivity and
ai/(cm)(O"ec From measurewnts of el atric
I
,pendence at, 0-100000 it vas concluded that BaBi 3ub 2 is a
temperature de
semicondur-tor vith a resistivity of 0.4 (obm)(=) at ro= temperature. A change
from itpurity to intrinsic conduction occurs at 600C. The,vifth of the forbidd&n
band, determined from. a plot of the temperature dependence of resistivity, vas
found to be 0.46 ey. Absolute thermoelectric pwer vas found to be +600
Microvolts/c at room temperature. In view of the interest in BaSi Sub 2 an a
possible refractory nemicondticting material., its airoxidation was determined
a-vimetrically at 1100C and vas found to follov a parabolic law vith an

0 TICN.
ACQ: 24jui63 zmcL:
SubqTm-. Metft DATE 00
SUB CODE: NO FM SOV: 015 OTHZR: 001
Card, 2/2
SAMS01-10vt G.V.; LYUTAYA, M.D.;JESHFO&
Preparation and phyBicochemical properties of scandium
nitride. Zhur. prikl. khim. 36 no.10:2108-2115 0 163.
(MM 17: 1)
1. Inst-itut metallokeramik! i spetsiallnykh splavov AN UkrSSR.

NESHPORt V.A.; LIVOV, S.N.; SAMOWNp G.V.
Magnetic susceptibi1ity of siUcides of certain transition metals.
Izv. vys. uaheb. zav.; fiz. no.1:160-163 164. (MIRA 17:3)
1. Iristitut. metallokeramiki I spetsialtnykh splavov AN UkrSSR
Khervonskly pedagogichaskiy Institut imeni Krupokoy.

AA- -4
AccEssiou uRt AP4038443
AUTHORt VLI'k, Yu, Hel Averbe, It. G.; Neshpor. V. S.; Ry*zhkovag
T, Po; (Imellcheakoo Yus At
TITLEt Interaction of utobLum carbide with tungsten
SOURCEt TeplofLxtka vy*sokLkh temperatur, v. 2, no. 2, 1964,
274-279
TOPIC TAGSt tungsten, nLobLum cnrbLdeq ~Lntered tungsten niobium
Icarbide alloys tungsten nObLum carbide interaction, tungsten
IniobLum carbide allay, alloy property# allay microstructure, alloy
Iphase diagram
:~ADSTRACT: Two sections of the W-11b-C system$ the W-11bCO.'an with
i5-95 wtZ V and W-HbC0 95 with 5-50 wt% W, at 2000, 2600, 27000
.band 3000C9 have been investigated by means of metallographLe
,and x-ray phase analyses, visual thermal analysis, and micro-
hardness measurements* The alloys$ alattr6d in a vacuu* of
10 4 aw.11go cont4ined Cot wtZ max. of X and Oe sent crest-
tsent of the alloys was carried out to an ultrapare
Card 1/4

ACCZSStOR Mitt AP4038443
helium atmosphere. Results of the analyses showed that the W-NbC
and W-HbCO,;5 sections are not pseudobinary systems and (in the
solid stat pass through the two-phase equilibrium regions (x+&
(M-W and V2C base solfilsoluWas), n+Y(m-W and NbC base solid solutions)*
and y+O(NbC and 11bZC base solid solutions) and through a three-
phase a+6+y region. No ternary compounds were found in that iegLou
of the comoositionis in*estigated.* an the basis of the results
oWneds Lqqthemal sectfoasof Me ternary p1me dimrsm for 2000, 2600-2 70% and
3000C, and a hypothetic diagram of the W-NbC section were lotted
(see Enclosure 1). The W-Hb(; alloys with less than ZOwtZ W-wCWU
found to be stable at temperatures .1 3000C9' but alloys with a
higher W content begin to melt at < 260OCe. At ZOOOC all alloys
are in the solid state and can be used as a base for high-teuperatum
materL&19.6 OrLg* art. hast 5 figures.,
ASSOCIATIONs Cosudarstvenuy*y inatitut prMadnoy khtaLL (State
Institute cof Applied ChemLatry)
Card ZA

ACCSSSION MRs AP4036443
SUBHLTT&Dt ZlHay63 DATE ACQt 09jun6k SUCLt 01
SU3 CODEs HK No Rep sovs 001 OTHERt 006
Cwd 3 4

m
C=109 IRS AP4G38443
1~1
L*r
N;k~
r
50 atZ- Nb at% V
50 stz C
Lagraw of the
Fig. to HypaChetLeal phase d
W-Nbc systen
Card 4/4,

L 29602A6 EWT%'m)/ETG(f VVIP(e)LEWNWETI IJP(c) AjaH/JD/JG/GD
ACC Ma AT6013560 (A) SOURCE CODE: UR/0000/65/000/000/0219/0236
AUTHOR: Vilfk, Yu. N.; Avarbe, R. G.; Neshoor, V. S.; Ry~hkova, T. P.; Cmellchenkoeq
Yu. A.
ORG: State "Order of the Red Banner of Labor" Institute of Applied Chemis tIry (Gosu-
darstvennyy ordena trudovago krasnago.znamenii institut prikladnoy khimijvy-
TITLE: About interaction between niobium carbide and tunxsten
_X-7 1-7 ~L I
SOURCE: AN UkrSSR. Institut problem materialovedeniya. Vysokol nperaturnyye neorga-
nicheskiye soyedineniya (High temperature inorganic compounds). Kiev, Naukova dunka,
1965, 219-236
TOPIC TPGS: niobiun, tungsten, carbide, carbon, nonferrous metal
ABSTRACT: The phase equilibrium of tungsten and nioblun carbide, NbC0.99 (from 5 to 91.
wt % W), 4nd NbC0.85 (from 5 to 50 wt % W), was examined by x-rays in the 20000-30000C
range. It was found that the system has true two-phase region (a+6-solid solution based
on V and W2C. a+y-solid solution based on V and NbC, and y+$-solid solution based on
NbC and Nb2C) and also a region of a three-phase equilibrium, a-~O+y. In the tertiary
W-Nb-C region the liquid phase occurs below 26000C. In the tertiary W-Mb-C region
binary eutectic. %+0, a tertiary eutectic m+$ty, and a tertiary eutectic a+6+y were de-
tected. The hypothetic profile of the Nb-W-C system Is shown In figure 1. The depen-
dence of the lattice parameter of the a-phase upon Nb content and of the NbC solid solt

L 2960'9
ACC NRt
_i~ssibie shape of the
tion upon WC content are graphed. The melting ranges and the
polythemal profile-of the W-KbC system are'--a-lso shown. Orig. art. has: 0 figures,
3 tables.
2/3

ACC NRs AT6013560
Fig. 1.
A=liquid I
(c)--30000C.
A=Iiquid
NUP
9 fo 0 do At
--d-0- ~A`111
w n 40 ~fr dw
41. Hypothetic profile of the Nv-W-C system
at (a)--2000*C; (b)--2600*-2700*C;
SUB CODE: 07/ SUBM DATE: 03Jul65/
Card 3/3 CC/
ORIG REF: 008/ OTH REF: 010

~CC _;rRsIPL5025791 SOURCE CODE: UR/0363/65/001/009/1545/1546
AUTHOR: Neshear, V. S.; Klimashin, G. M.~
=MR--
ORG: State Order of the Labor Red Banner IRstitute--Qf hRRlitd Chemistri
(Gosudarstvannyy,ordena Trudovogo Krasnogo znameni institut prikladnoy
khimii); 4eningrad Technological Institute %Leningradskiy tekhnologi-
cheekLy instLtut)
TITLE: Thermal conductivity of titanium monocarbide Is a function of
carbon content in the region of homogeneity
SOURCE: AN SSSR. Izvestiya. Neorganicheskiye materialy, v. 1,sno. 9,
19650 1545-1546
TOPIC TAGS: titanium compouna, carbide, heat conductivity
ABSTRACT: Samples of titanium monocarbides TiCo.971-0.525 were obtain4
ed by direct synthesis of the carbide from the components followed by I _.
sintering of bars pressed from the carbide. The samples consisted.of a~l
single phase and had a cubic NaCl-type lattice. The dependence of the
thermal conductivity on the-mole fraction (1-x) of carbon vacancies in
~TiC monocarbides was measur ed and is'sbown in fig. 1. The contribution
x
of free electrons to thermal conductivity was determined from the Wiede--
Card 1/2. UDC: 546.82141261

1r. i ii rA.AA
5791
ACC NRI AP502
1
mann-Fran z.law b -Y measuring the electric resistivity. The change in this'
electroniccompobent of thermal conductivitY A Is represented by
cur've 2.:~Ths Increase in A from carbon-rich to carbon poor sonocarbid
ee*is duit, to a substantial increase in the concentration of free Glee-
trons (from 6.1 for TiCO.
971
AN
t0.1.0 per formula unit for
+A
:~-.TLCO,'525) jas indkeated,by Hall c< -
fficients measure on the same,
e, d
471
a
samples. The., lattice component
was
..af thermal. conductivity A
V
"U
0 a
determined as the difference be
0
0 tween the ~,zeasu_red, and the elec-.
tr6nic conductivity X A 6 - I
a 0 a I figure.
rig. art a:

A

tivfty~of ti-
Mg..l.- Tbernal-condu
TLC vs sole frac
tanium monocarbide
tion of.carbon..vae ncIA (1-x)t,l--
:
--lat-
total 'thermal- conductivily; 2-' _41ectronic, therlmal: conductivity; I
ties thermal conductivity*-
-
SUB:COV9
s 07/ SUBM DATE: IQKayfis/ ORIG REIN 003/ OTH RM 002
Ccwd__2/&Z

L
creaGing fres electron concentration. The Hall mobility of electrons decreases from
carbon-rich -to carbon-Wor titanium nonocarbidesp due to an increase in the fraction
of conductioa electrons scattered by the carbon vacancies. OrIg. art. hass 3 figures
and I table.
SUBCOINS 07920/ SMDATES 3114ar65/ ORIGREFS 00/ OMWS 016
C d 2/2

L 0161295_61~ jWj (t) /-&TI 1JP(c) AT G 0
1
ACC NRt AVOZ7151 0-11DYSMwil
SOURI OD31 ~i 66-do-[6-57666 0244
AUTHORS !vIgustinike A* I.-. Gelikova, 0. A.: Klimashin, G. K.; MM12yiLd~L. ~V-;
Meshpor, V.
ORG& none
TITLE: Dependence of certain electrophysical properties of titanium monocarbide on
the carbon content
SOURCE: AN SSSR. Otdoleniya obshchey i takhnichaskoy khimii. Issladovaniya v ablasti
khimil silikatov i. okislov (Studies in the field or chemistry of silicates and oxida4,
Moscowv Izd-vo Nauka,, 19650 241-244
TOPIC TAGS: titanium compoundv carbide, Hall constant, Hill mobility# conduction
electron# resistivity# carbon
ABSTRACT: The dependence of the resistivity thermal emf a( and Mal constant R of
titanium moncearbides on the carbon content was studied in the region of homogeneity
on samples prepared from powered Ti and acetylene black at 17500. All the samples
showed a negative Hall constant, indicating an n-type conductivity; the absolute value
of R decreases rapidly with decreasing carbon content, indicating an increase in the
concentration of free conduction electrons. The absolute differential thernal emf
also decreases with diminishing carbon content. The resistivity decreases with de-
creasing carbon content in monocarbide phases TiGxg this being In accord with the In-
C"d
'2

ALC NRs AP6029818 CA) SOURCE CODE: UR/0363/66/002/008/1439/1443
AUTHOR: Aygustinik, A. I.; Golikova, 0. A.; Klimashin, G. H Meshpor, V. S.;
Ordanlyan, S. S.; Snetkova. V. A. -.1110
ORG: Leniurad Institute of Te~hnologv im. Lensovet (Leningradskiy tekhnologicheskiy
institut), a .%New%,% CTL%%%V-&t
A.X*A-Q%N%4k NO-UK s(k) . 1~7
TITLE: Dependence of certain electro- and thermophysical properties of zirconiunt
monocarbide on the carbon content within the range of homogeneity
SOURCE: AN ISR. Izvestiya. Neorganicheskiye materialy, v. 2, no. 8, 1966, 1439-1443
TOPIC TAGS: zirconium carbide, solid mechanical property, solid physical property,
electric conductivity, ther I emf, Hall coefficient
ABSM-CT: The dependence of electrical resistivity absolute thermal emf, Hall coef-
ficient, and thermal conducti-Aty o zirconium monocarbide was studied for 36-48 atom I
C contents in the carbide. The zirconium carbide samples were prepared by fusing high
f,
purity zirconium and carbon at 18000C in vacuo ft'lowed by sintering at 22000C. The
properties, compositions, and lattice parameterdl or various zirconium samples are
graphed and tabulated. It was found that free electrons act as current carriers withir
zirconium carbide. The electrical resistivity, the theival emf, and the Hall coeffi,--'
cient were found to decline and the thermal conductivity was found to increase with

L 06576-67
ACC NRs AP6029818
declining contents of the combined carbon in zirconium monocarbide. This phenomena
axe related to the release of a portion of the zirconium electrons from the localized
metal-carbon bonds. The specific resistivity and absolute thermal emf were found to
increase linearly with increasing temperature. The slope of these lines was found to
decrease with decreasing carbon content in zircon,-m carbonate. This phenomenon is
apparently due to the decline in the efftective mass of the conduction electrons. Orig.
art. has., 2 figures and 1 table.
SUB CODE: llZC/SUBM DATE: 060ct65/ ORIG REF., 013/ OTH MF: 015

ACC Mp*' AP7004404 SOURCE COIM' URIG~26/67/000/001/0069/0094
AUTHOR: ReApor, Vil0k, Yu. N.; Danisina, 1. N.
ORG: State Institute of Applied Chemistry (Gosudarstvennyy institut prikladnoy
khimii)
TITLE: Changes in the electric and thermophysical properties of pseudobinary
alloys of the section ZrC0. 92-ZrNo. 85 of the zirclonium-nitrogen-carbon system
SOURCE: Poroshkovaya metallurgiya, no. 1, 1967. 89-94
TOPIC TAGS: carbon alloy, binary alloy, pseudobInary alloy, zirconium carbide,
zirconium nitride
ABSTRACT: The dependence of the variation In electroconductivity. absolute
differential thermal e. m. f. , and characteristic temperature on chemical composi-
tion for alloys of the pseudobinary region of the state diagram of zirconium - nitro-
g6n-carbon hardened from 2000 C has been studied. The nature of a change in
value of the electroconductivity, thermal conductivity and characteristic tempera-
ture indicates that in the zirconium carbide-zirconium nitride system, a continuou
series of solid solutions are formed with unlimited mutual solubility of the

AP7004404
components. The authors express their gratitude to 0. V. Molchanova, A. V.
Suvorova, Yu. A. Omellchenko, and V. D. Novozhilova, for chemical and x-ray
analyses of samples. Orig. art, hasi 3 figures. [Authors' abstract] [AM)
SUB CODE: I1/SUBM DATE:. 29Kay66/ORIG REF: 021/OTH REF: 009/

&W/169-59-4-4233
Translation fromi keferativnyy zhurnal, Geoflzlka, 1959, ur 4, p 144 (USSR)
AUTHORS. Yeryushev, N.N., Neshpor,_Yu.1
~ 1,-'
TITLE. On the Connection Between Solar Flares and Phenomena in the
Lower Ionosphere,.,,,
PERIODICAL- Izv. Krymsk. astrofiz. observ., 1958, Vol 20, pp 12 - 21
(Engl. Tres.)
ABSTRACT: A correlition between solar flares and corresponding phenomena
ela atmospherics (f - 37 ke) and on the minimum ionospheric re-
flection frequencies (fmin) has been carried out, using the
vertical sounding method. Results of studying the quantitative
connection between them are given. The author d-1--cusses problems
of the effectiveness of solar flares an the aforementioned types
of phenomena in dependence on the location of the flares on the
solar disk and on the daytime.
Authors' r6sum6 6?~
Card 1/1

ete.3;fj.
9,
AUTHORSI
TITM:
S/ID35/61/000/005/oa6/042
AOOI1AIOI
Neshpor, Yu.I., Savich, N.A.
On the possible structure of D-region during sudden ionospheric
disturbances
FMIODICALt Referativnyy zhurnal. Astronomiya i aeodeziya, no. 5, 1961 58 ab-
stra.at 5A381 ("Izv. Krymsk. astrofiz. observ.", 1960, v. i4, 41-47,
Engl,- summary)
TEXTx The authors propose a method of determining the structure of D-re.,
gion during sudden ionospheric disturbances. On the basis of experimental re-
sults obtained during disturbances of August.3-1, 1956, and August 22, 1958, the
conclusion was drawn that ionizing radiation of those flares was not identical
to radiation creating a 'quiet D-region, but represents apparently X-radiation.
There are 5 references.
Authors' summary
(Abstracter's note: Complete translation]
Card 1/1

s/169/62/000/008/081/090
E032/EI14
AUTHORS: Vladimirskiy, Dvoryashin, A.S., 'Yeryushev, N.N.,
Nloiseyev, I.G., tjhpor,__X~~j)~!, Ogirl. M.B., and
Odintsova, I.N.
TITLE: The chromospheric flare of August 22, 1958 and the
associated radio- and geophysical effects
PERIODICAL: Referativnyy zhurnals.Geofi *zika, no.8, 1962, 25.
abstract 8 G 191. (Izv. Krynsk. astrofiz. observ.,
v.26, 1961, 74-89)..(abstract in English)
TEXT; Describes the results of observations of the flare
of August 22, 1958, which were carried out at the Krymskaya
astrofizicheskaya observatoriya (Crimean Astrophysical observatory)
using the coronagraph, radio telescopes, the,ionospheric station,
the apparatus for the recording of atmospherics, and the
geomagnetic station, as well as observations at a number of
cosmic-ray stations.
TAbst.rac'tor's note: Complete translation.
Card -1/1

s/m/6z/boo/oWon/b64
qvgfo A001/4101
AUTHORS: Abramenko', A. N.,..Neshpor, Yu. I.
TITLE: Measurement of absorption of cosmic radio waves
PERIODICAL: Referativnyy zhurnal,'Astronomiya i Geodeziya, no. 6, 1962, 58,
abstract 6A434 ("Izv. Krymsk. astrofiz. observ.11, 1961, v. 26, 149
155, English surmary)
Tr-~ A T The authors describe the equipment and preliminary results of obser-
vations. They propose a method to calculate absorption of :Cadio waves in region
D of the ionosphere using the records of intensity of cosmic radio radiation.
There are 8 references.
Authors' summary
(Abstracter's note; Complete translation]
Card 1/1

.JJTHC)1:
TITIL;:
11E_~~IGDIC,U,:
42831
3/169/62/000/010/061~/071
D228/D307
Tenetration dq~,th of ionizing chromospheric flare
radiation
Referativnyy zhurnal, Geofizika, no. 10, 1962, 27,
abstract IOG206 ~Izv. Kz~sk. astrofiz. obst!rv., 26,
1961, 156-160)
T EM" Proceeding fron the general formula of the absozl)tion
factor, the expression
B 17 dz V2 1110 zdz
z + ((J + 1JL )2 ~ z t (&J +
Was obtained for the excess abso-ription of cosmic radio emission dur-
in,,,, a sudden ionospheric disturbance, in the case of quasi-longitud-
inal radio wave propagation. In it 2 = .2jrG2&c, ~It is the ioniza-
tion denisity at the time of a disturbance, and No is the normal den-
clty- If )J 2 4< ((j + 4) L)2,
C ard 1/3

S11691621000101010651071
Penetration depth ... D228/D307
)2'
1.) OJ2) + f) L) 2/ (Q -1 + (j L
where (i L and (1 2 are the two o.--)crating frequencies. If v2>> (Gi +&~.) 2
6f (01)/A? (Q2) - C(W2 " CJL)I(e')I. + 001 n I
vinen, depending on the .22orm of the curve of N(z), n can assume var-
ious values betwee-a 0 and +2. 4,xt 3inferopoll cosruc radio emission
is continuously recorded on the frequencies Q, a 26.7 Ulc/s and
W 2 - 3:2- 5 11c/s . The author con,-,)uted the time de-L-)cndence of 69&)
durin,r a sudden ionospheric d'i sturaance f or w Then, assuming
to be inversely proi)ortional. to the square of the frequency, he
I
calculated ftw con,?arcd the results i4th the observations.
ard
it was found the cnlculated curve coincided with the observed
in six cases; in two casar., however, the calculated curve was above
the experimental (sudden ionospheric disturbances of April I and
November 12, 1960). It followr~ from this that n < 2 on April I and
November 12, 1960, and t-ha-L the anomalous ionization of'the sudden
ionospheric disturbanccs was localized in the region where V >
Card 2/3

S1169
/62/000/010/063/071
Pene-ra-ion depth ... D228/DS07
i.e. 103 C/G. Proceeding from data about the height; distribution
v , it may be inferred that a height of' -j 50 ka corresponds to the
values of V >.., 10 C/S. Cj
Z.Abstracter's note: Complete translation.2
Card 3/3

NESHFOR, ru.i.
Use of radic R!~tmn.=j- in Y-rad-IlLt-l-m arm
lav. Krym. tvitr7zfi3. obser. 29-.152-159 r63. MA-.10)

ACC Mi-AR602MY SOURCE CODE: (JR/0269/66/000/006/0063/0063
jAUTH0R,. Neshpor, Yu. 1.
,TITLE: On the variation of x-ray radiation spectrum of solar flare& in time
I
1SOURCE: Ref. zh. Astronomiya, Abs. 6.51.480
REF SOURCE: Izv. Krymak. astrofiz. observ., no. 34, 19659 313-318
TOPIC TAGS: solar x radiation, solar flare, astronomic observatory, ionosphere
TRANSLKi"ION: A method is suggested to obtain the variation curve of the flux of solar
K-radiation in time using data on the changes in the electron density in the ionosphe
The data are collected by earth-based equipment during sudden ionospheric excitatibnag
The nature of the change of the x-ray spectrum in time is determined from changes in
flux for two levels of the ionosphere (two frequencies). It is demonstrated that the
x-radiation spectrum during the solar flare an 23 February 1957 changed in tiow. 8 ref-
erences. A. P.
CODE: 03
WC: 523.7:525.23

DMMMMs V.M.,p Inzh.; MESVIA, G.F., inzj2.
L#Ahigzg of the WIX-Go . -- *oi--,&*a- 7 o-v,a- rh~ a-'a'd- pow*r traasudasion lino. Zl*k.
sta. 34 no*g*.76-78 Ag t639 (MIRA 16:32)

RUMANIA / Human and Animal Physiology, The Nervous T
System.
Abs Jour: Ref Zhur-131ol,, No 9,, 1958,1 41697,
Author i Zager, Oe; Broshtianu, R.; Neshtianu V Florta-
Choklu, VI
Lnst Academy of RPR,
Title The Connection Between the Optical Tract and the
Frontal Lobe,
Orig Pub: Zhe med, nauk, Akad, RNR,, 1956t 1. No Z. 163-170.
Abstract: The cortex of the hemispheres in cats, with the
exception of the right frontal lobe, was removed.
is Within 2 1/2 years the bilateral loss of the pro-
tective defense reflex was noted, together with
Card 1/3

RUMANIA / Human and Animal Physiology. The Nervous T
System.
Abs Jour: Ref Zhur-Blol., No 9. 1958s 41697#
Abstract: the loss of the rightsided tactile reflex for
.standing and posture correction. Rhythm adoption
was observed only in the right frontal area after
:rhythmical stimulatton-wLth Light at frequencies
of 140-470 osc./mIne In leads from other areas
of the skull, Irregular, high amplitude waves of
frequencyI#*jI ase/sec. were observed. Inclusion
of..total Illumination blocked the adoption of the
stimulatton rhythm:Ln the frontal lobee' Inter-
rupted:sound~stimitztation was followed only by res-
piratory changes and the appearance In all leads
of waves of I osc./sec. Histologically-total bi-
lateral degeneration of the lateral geniculate
bodies was demonstrated. It was established by
this method that there exist direct pathways
Card 2/3
114

WM/Mmu and AnIml Physiology - Nervous System. T-10
Cortex, of. Cerebral Fr-d spheres,
Abs Tbur Ref Zhur Biblet No 7j, 1~580 32152
Author KrI gel E. Jq Broshtyanuo R.j lfeshtivWx V.
Inst _:_~
Title .2jectreencephalographic Investigatioi-, of Cortical Activity.
'Changes 6f the Ourve.of-thesLatent Period of Cortical
Reaaiion td' rnterrupted Ligit Stiq* ilatione Role of Expe-
rimentally-Induced Spasm.Attack an&,oflBarbituric Sleep.
Orig Pub Mi. medo nailk Akado FM 1-
,:ffo:2., 171-160
Abstract In unanesthetized.cats, the ]Atent:period of reactions
'
the clortes in -the ~ region of the area striate to
(~M) I in
a. second or third flash of Ildht (relatloa of time of
Ilett and darkness 11/n)., significantly e=eeded the M
~
to the
first_ flash- A-ft4r Thabhes,, LER began to under-
go uniform oscillationsm, ~hich-the-author characterize by
a calaulAted degree of standard deviation.
Card 1/2

HUMANIA/Human and Animal Physiology - Nervous System. T-10
Cortex of Cerebral Hemispheres.
Abs Jour : Ref Zhur - Biols, No 7, 1958, 32153
Author : Kri,,el,, Broshtyanu, Neshtianu, V.
Inst :
Title : Electroencephalographic Investigation of Cortical Reacti-
veaess. TI. Influence of Afterspasm and Medicated (Bar-
bituate) Sleep. Retardation of the Latent Period of
Cortical Responses During Interrupted Light Stimulations.
Orig Pub : Studii si cercetarl, naurol. Acad. R!R. Inst. neurol., 1957,
2, No 1, 53-67-
Abstract : Part I see RZhBioll 1958, 4439.
Card 1/1

ZRIGICLI, Z., U~HTIMIJO-
Sloctreencephalographle studies an cortical reactivity (with
summary In Ingliabl; Zhur;vys.nsrw.de1at. 8 no.4t570-581 jlrjkk-. 158
. (=a U:q)
Le Imetitat nevrologit In. 1.P. Pavlova 1kadeuil Rmaynskoy faroduoy
(MOMMOEMLOGRAPETO
off. of cortleallstimulation & Inhibs' (Rue))
(CXFZBM OORTZX9 -physlolocy
eff* of lahlb, & stimulation, electrophysi6li (Jhs))

KREMMER, A.; KRIGELI, Z.; NESHTIANU, V.; ANGELESSM, NjAngelescu, U.]
&perimental studies on the problem of changes In the secondary
reaction during barbiturate sleep folloving bilateral ligature
of the common carotid arteries. Nauch. trudy Inst. nevr. LIS
SSSR no,1:278-283 160. (HIRA 15:7)
CAROTID ARTERr-LIGATURE)
CMIFMM CORTEX)
sLFM MMM)
i

NE511MYTISP V. V.
"Investigation of a Photoelectronic Amplifier, Devalopment
of the Foundations of Its Theory and Methods of Calculation."
Cand Tech dci, Llvrov Polytechnical Inst, Min Higher Sducation,
Kaunas-Llvov., 1954* (KLj No 7j, Fab 55)
SO: Sim. ua. 631o 26 Aug 55-Survey of -5cientific and Technical
Dissertations Vefended at USSR Higher Educational Institutions
(14)

S/194/61/000/006/020/077
D201/ '302
MTHORS: Veshuhaytis, V.V and Sryubas, V.A.
TITLE: Applying an electron-optical scanning systcm for
automating optical control of paper
PERIODIGaL: Referativnyy zhurnal. Avtomatika i radioelcl-tronika,
no. 6. 1961 24, abstract 6 V190 (Tr. AN LitSSR,
1960# B3(235, 183-188)
TEXT: The Institut energetiki i elektrotekhr-iki iVil Litovskoy SS.R
(Institute of Energetics and of Electrotechnology of the A-S Lithua-
nian SSR) has designed a devicc for detecting holes, stains, folds
and similar defects at the surface of paper sheets. The controlled
surface is illuminated through an objective i-rith a moving light
spot (IS) obtained from the screen of a CRT. The light, reflected
from the controlled surface, is detected by a photocell and trans-
formed into a corresponding! el. signal. The movement of the elec-
tron beam at the screen of CRT is controlled 'by a saw-tooth voltage
Card 1/2

3/194/61/000/006/620/677
Applying an electron-optical... D201/0302
from a special generator. The whole surface is scanned by ri.-Leans o-E
sintultaneous scanning and sh-LILtinc, of the controlled obiect. The
experimental installation had type 18fi047 (18LO47) CRT spot diam-
eter - 0.5 1 1 MI, persistence 2 x 10-5 sec) and photoolcetron mul-
tiplier 03Y -19m (FEU-19m). Maximuin shifting speed of paper is 30
m/min. To obtain a high efficiency of the arrangement, it should
have a CRT persistence 10-6 _ 10-7 see a-ad with a spot dimeter
0 06 1 0.07 mm. The oscillogrms of signals are given at the out-
P~t of the multiplier together with experimental curver, m-latinf;
the amplitude of a pulse, produced by a black stain havillb! (AMC11-
sions of 2 cm, to the scanning frequency. figures. 3 references.
f-Abstracter's note: Complete translation.2
Card 2/2

23466
000 S/Jl5/6i/ooo/oo6/O02/oo6
e/ I 1, 0 X073/2535
AUTHORS: Neshukaytis, V. V. and Valteris, S. Z.
TITLZ.* Low Frequency ibrometer with a Liquid Seismic Mass
PERIODICALt Izaeritellnaya tekhnika, 1961, No.6, pp.18-21
TEXT: At the Kaunasskiy politekhnicheakly institut
(Kaunas Polytechnical Institute) a vibration sensor was developed
which permits measuring low frequency vibrations in any orientation
in space. By means of a relatively simple electronic amplifier
circuit it in possible to measure the ampUtude and frequency of
vibrations and to determine their shape. The apparatus is now
being perfected at the Institut energetiki, i elektroniki Akademii
nauk Litovskoy SSR (Institute of Power Engineering and Electronics,
Academy of Sciences, Lithuanian SSR). The principle of operation
is shown In Figol. A circular tube, which Is narrow in the centre,
is closed at the ends by elastic coffered diaphragms, the space
between the diaphragms being filled with & liquid. The liquid and
the diaphragms form a seismic system with the suspension springs.
The mechanical vibrations are transformed Into electric signals by
means of a careless transformer pick-up, Fig.3 (Esiox - output
Card 1/6

23466
Low Frequency Vibrometer S/115/61/000/006/002/006
Z073/Z535
Voltage; Unam - input voltage). Voltage to this pick-up is
fed either to the coils I and 3 or to the coil 2 using high
frequency current. The coils I and 3 are so connected that
they generate fluxes in opposite directions when current in fed
into the coil 2. The e.m.f. amplitude at the output depends on
the position of the coil 2 relative to the coils I and 3.
being zero In the centre position and maximum at extreme positions.
In some cases it way be convenient that the neutral point in
shifted from the central position, which is achieved by connecting
a condenser C I into the circuit and by a suitable choice of the
capacitance of this condenser the desired shift of the neutral
position can be obtained. By connecting a condenser C, parallel
to the output, an oscillation circuit is created. If t e
resonant frequency of this circuit is the same an the supply
frequency* the sensitivity is considerably increased. The
maximum linearity of the characteristic, i.eaCthe dependence of
the output e.m.f. on the displacement of the middle coil.is obtain-
ed if D = d + 0.549, wh:r;. 2 and d - diameters of the centre
and end coils, respectiv I - distance between the end coils.
Card 2/6

23466
Low Frequency Vibrometer ... S/1l5/6i/ooo/oo6/002/oo6
E073/E535
If the coils I and 3 are connected opposite to each other, the
pick-up will be Insensitive to external magnetic fields. By fitting
the pick-up into a metallic housing, the influence of external
fields can be entirely eliminated. Fig.4 shows a variant of the
design of such a vibration pick-up. The liquid seismic mass I
fills the body 2 which is closed at both ends by elastic rubber
membranes 3; the output coils 4 of the transformer pick-up are
rigidly connected with the housing and the feeding coil 5 in
suspended on elastic springs 6. The feeding coil has a celluloid
bubble 7 of a size such that the reduced specific weight of the
coil with the bubble is equal to the specific weight of the seismic
liquid. Depending on the orientation of the vibration pick-up in
space, the seismic mass will take up a certain position by seeping
through special holes 8 into the body. In the case of steady
state conditions, due to the effect of the pressure of the springs
6 the coil 5 will occupy the same position relative to the
coils 4 regardless of the orientation of the vibration pick-up,
since its specific weight and that of the seismic liquid are equal.
During the meAsurements the vibration sensor is either pressed on
Card 3/6

23466
Low Frequency Vibrometer 5/115/61/000/006/002/006
C073/E535
by hand or glued onto the object under test. The output coils
an well an the housing vibrate with the object, whilst the
liquid, the seismic mass, remains immobile and holds the input
coils in the same position. The modulated signal from the output
of the vibration sensor In demodulated and amplified. The
amplified signal is then fed to the terminals of amplitude or
frequency measuring instruments or to an oscillograph- The sensor
has a low sensitivity (2%) to transverse vibrations because the
movement of the liquid in the narrow channel proceeds only along
the axis. The amplitude, A vs. frequency, f, c.p.s. character-
istics of the instrument are plotted in Fig-5: curve I - applies
to the system filled with distilled water, curve 2 to glycerine,
curve 3 t o glycerine diluted with water. The instrument is
designed for measuring low frequency (5 to 200 c.p.s.) vibrations
of amplitudes between I and 5000 g. The carrier frequency is
50 c-P-3, Two variants of sensors have been produced, one
(Fig.4) for measuring small amplitudes, weigbd%120 g, the other
(Fig.6) for measuring larger amplitudes and weighing 300 g, The
total weight of the measuring equipment is 15 kg, There are
4/6

Low Frequency Vibrometer
7 figures.
A I-
ps 4 UF
At~
Card 5/6
23466
S/115/61/000/006/002/006
E075/E535
P +
Ct
Ai
Fig.4
1 2 8 5

Low Frequency Vibrometer
23W
S/115/6i/ooo/oo6/oo2/006
E073/E535
Fig.6
Card 6/6

usauxaL,j6,.-.-GIL'TER, 1.
,~- --"W*
Turned wood taYs. rUn.tekh. no.6:49-50 Je '57. (KLRA 10:7)
(Toys)

MHUIOV, B., kandidat isImestvovedcheakikh nauk, Moskva.
-,
Turning oval fratmes nn a lethe. no.~:29 Ac 15?.
(Wj~, A 10: 9)
(Turniuc)

NISMOT Be V, kandidat iskusatovadchaakikh nauk.
a I
NOWN&M
radtatIon relief. Prou. koop. no.9:17 S 157. (Km lotg)
(Woodvark)

RISBMV
-._A,I,,,-_~nd.iskunstvoved.nauk-. KOSHMV. A.Te.. arkUtaktor;
A9MMA, T.Ye., arkhitektor; SEMIEV, T.M., arkhitaktor;
VOSMUCTA. G.K.. arkhitektor; GORWROTA. V.A., arid-iltektor;
KOMIKOV, T.G., arkhitektor; KARKZYZ7, Tu.S., arkhitektar;
YATCROVSKAYA, K.B.. arkhitaktor; O(FRYZKO, P,T,o arkhitektor;
TIMMOTA. N.Y.. arkhitektor; WANUIKOTA. L.T., arWtektor;
QRADO1Fv G.A., redo; PATLMO, KeTes red*
[Furniture and equipment for public buildings; catalog based
on materials from the Exhibition of Furniture and Equipment
for Public Buildings. 1959-19601 Kebell i oborudovanle d1la
obahchestvennykh zdanii; katalog sostavlen. po matertalam
vystavki mebeli I oborudovanlia dlia obahchestvanny1ch zdanti,
1959-1960 gg. Noakwa. Gos.isd-vo lit-ry po stroit., arkhit. I
stroit.materislam. 1960. 186 plates. (MIRA 14:2)
1. Akademiya stroitelletva i arkhitektury SSSR. Institut
obahchestvannykh zdanly i sooruzbazxiy. 2. Chlen-korrespondent
Akademil. stroitellstva i arkhitektury SSSR (for Gradov).
(Furniture-Catalogs) (Public buildings-Squipment and supplies)

JUMMOTo Boolash.-Polkoynik
Crovelag an tee. Toon.snan. 34 no.12:18-19 D 158.
(MIRA 22:2)
(str"m crossing, Kultary)

ACCESSION NR: "4043823 S/0303/64/000/004/0064/OQ56
AMOR: M-olseyov, A. F. , Olenin, S. S. A. 1.
TITLE: Use of polyorganosiloxane coatings to protect parts of DH-6 differential mano-
mcters against corrosion In aggrassivo media
SOURCE; Iakokrasochny*yo materlaly* I Ikh primenenlye, no. 4, 1964, 54-56
TOPIC TAGS: anticorrosion coating, polyorganosiloxane coating, differential manometer,
coating FG-9. coating 192T, ooating FG-50, coating MK-4, cdating FG-35, chromic oxide
coating, aluminum powder coating, titanium dioxide coating, metallic coating, phosphate
precoating, polyorganosiloxano, corrosion, sea water
ABSTRACT: Modiffed polyorganosifoxane coatings 192T, FG-9 (+ 12% chromic oxide or
G','Q Al powder by weight). FG-35 (+ 5%a Al powder), FG-50 (+ 5% Al powder) and MK-4 (+
12 ",v titanium dioxide) were used to coat the housings, seats and membrane chambers ofI
D'141-6 differential manometers In a study of optimal protection against corrosion In various,
aggressive mcdIa6 Housings and seats were prepared by sandblasting, membrane blocks
were either untreated or etched in nitric-hydrochloric acid mlxtur~. Sprayed parts (I or 2
coats) were exposed for one month to tapwater at poom temperabm, 6% sodum chloride
at room temperaftwe or 50C, or 6% solutions of wAfuric, hydrochloric or nitric a4u1s;
C.,d

.`ACCESSION NR: AP4043823
i dipped parts were exposed for 10 days to sea water or nitric acid (,--'17% concentration).
Prior phosphating did not im the corrosion r6istance of coatings. FG-9, FG-50 and
prove
MK-4 were beat in tap water, FG-9 and FG-50 were adequate in 5% sodium chloride at
50C and 5% solutions of nitric or hydrochloric acids, but not in guffuric acid. MK-4 pr0-
tected only in dfluts solutions-of nitric acid. Adhdolon to an untreated scale surface was
poor for aH coatings. Two coate of FG-9 or FO-50 provided adeq0te protection in sea
water. FG-50 was somewhat better In nitric acid *dd is reoommi*ded. The stability of !
i Its film increams when curing temperature to Increa3ed to 200C. art. has: 6 tables. I
-ASSOMTION-. None
-00
SUMUTTED: W ENCL.
SUB CODE: MT NO REP SOV: 000 OTHER: 000
2/2
Card

AUTEORS: SyavtEillo, S. v., Sherayatenkova, V.T., 32-3-13152
Neshumova, A. M.
----------
TITLE: The Arialysis of Silicoorganic Compourids With rpsyect to Their Chlorine
Content (Analiz krenniyorFanicheskikh soyedineniy na soderzhaniye khlora)
4 1
ULPIODMLL: Zavodskay;- Laboratoriya., 1958., Vol. 24, TIr 3, pp. 287-289 (USSP)
tMTIU~Gr: In the present work hydrolysis of the compounds to be investigi-Aed is
cz-rried out-In a mixture of alcohol and water (1:1), after which the iron
of chlorine is determined mercua-ymetrically by using a mix--d indicator
(methylene blue - diphenyl carbazone), vifji!h chonies fron, blue to dark
blue or violet at the end point. Separtaion by a solution of metallic sodium
in liquid ammonia is described as the most simpleriethod of determining
halides. If the silicon conpounds contain hydrogen it must be removed by
boiling in a concentrated 1yes whereupon neutralization is carried out with
0-5n nitric acid. Good results were obtained also when determinine chlorine
in alkyl- and arylchlorosilane.9 by the method developed by Volhard. Two
processes of analysi8 are mentionedfrun w1iich several possiblities of
modifying the method ofcbtermination may be seen. irom the results shown
in tables i t may be s een that the method works with sufficient adduracy.
There are 3 tables, and 7 references, 5 of which are Slavic.
AVAIUBLE: Library of Congress
Card 1/1 1. Silicoorganic cctTjpounds-Chlorine-Deterninatic)n 2j' Hydrolysis

I WHORS SyavtZillo, S. V., Sliemyeatenkova, V. T.P .32-3-11152
Neehumova, 1- 11-11.
T iTLE: The Analysis of -~ilicoorganic Compounds With Respect to Their Chlorine
Content (Analiz kremniyorganicheskikh soyedineniy na soderzhaniye khlorz.)
FTMIODICAL: Zavodskaya Laboratoriya, 1958, Vol. 24, Nr 3, pp. 267-289 (tZSR)
ARSTRACT: In the present work hydrolysis of the compounds to be investig;-~ted is
carried out in a mixture of alcohol and water (1:1), after which the iron
of chlorine is determined mcreurymetrically by using a mixed indicator
(methylene blue - diphenyl carbazone), which changes from blue to dark
blue or violet at the end point. Separation by a solution of metallic
sodium in liquid ammonia is described as the most simple method of deternin#ig
halides. If the silicon compounds contain hydrogen it must beiemoved by
boiling in a concentrated lye, whereupon neutralization 1-9 carried out with
0-5n nitric acid. Good results uere obtained also when datermining chlorine
in alkyl- and arylehlorosilanes by the method developed by Volhard. Two
processes of analysis are mentioned from whir!h several possibilities of
modifying the method of determination may be seen. Fro* the results shown
in tables it may be seen that the method -orks with sufficient accuracy.
There are 3 tables, and 7 references, 5 cf vhich are Slavic.
AVAUj,BLE., Library of Congress
Card 1/1 1. Silicoorganic compounds-Chlorine-Determinaticn 2. Hydrolys is

PILIS9 I.; MICp B.; MLAKAR# J.; MUZMAVICI. Z
- M-~
Our further experiences with secondary antitubercular agents.
Tuberkulom 25 noeW04-213 AP-Je 163.
L rwtltut sa tubarkti2osu APV[Avtonoma pakrajina Vojvodina]
ftemla Umnica - Direktor: prof. dr Stevan Goldma,
(ANTITU=ULM AGERS)