SCIENTIFIC ABSTRACT NASLEDOV, D.N. - NASLEDOV, D.N.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R001136110018-9
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 14, 2001
• Sequence Number: 18
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

densit-ki ',the
tivit
3r
5 r: ~dc
evql P(&7.-

-,Ovam
IJAW at im,
Ong I,&*
-~ni'6f 4.q XvIddZif 0 (AiAis, -Phya. POICILIca,
Cu3A
to
ss witb'intrinsio
Z, ~29
6' foams was atabulatid -flar, Oree.. sampp
Jui - - , -,, - *. d 1 1010 or olts
4 ~ -A ~ . - ibr.:2.4:x 101 and- 1
w4 4i; &"A ii +1i .'i*l .1ian - elcig 3 re

of holes j- -10 -_,t6-10 --~o t4ined by -zone melting.- ihe fipecimens,- used were.-.-
6 -x 1, 5 x- 0'. ---,T6 ne rium j..cu e a
clatermi i~he --lifetime of ~nonequilib xrent carri r
6to~tion~a'r~y-,,t~nd,noiistat'ion'a-ry h t c- t'xi duc t 1 -4 ty
In -me"Ur
p 0 jand.-nois es, -were _ meas ured.
inj~ statioiia 'specinled vas illuminated, vith a modulated
A.- _eted_~ a-1-14YJ7 brum- f rom 1. 5 to 2.5 p In mea
_~neql
VI
97- &~Tm _Wf't'
-r
as:- fvw #e7- or:- Ses
d ft7 SoUrte oxgUlki --light p
was, use. I~e. , on::o
(x - i~ -10-9, it'a-) ~d de~ e :of 1 66ndikivit . -'Hall coefficient on temw I
epen e ectro yalid.
--e ~ -of nUtionary phot vity-,on temperatureo and
.apeIv r 4,41i$ it~:: O-V, dotment noiOu'. in- -9 -tre from 2:x
U al queAcy- 4ah 162.to 2 x 105
C;c J

~ekIMIF"Wo-M MOIL w6HI m %M W-
-IT
kid"-A 7
Man
.........
IF
16
qb

~7~.
-1.4~
A7
93*~,~."i,
7n

VORONKOVA, N.M.; NASUDOV, F.N.
Fffect of trarping levels in Gabs rhotoconductivity. Fiz. tver.
tela 7 no.8:2542-2543 Ag 065. (MIPA -18:9)
1. FIzIko-tekhnIcheskiy institut iment "offe A3 SSSR, Leningrad.

IMENKOV, A.N.; KOGO, L.M.; KOZLOV, M.M.; MESKIN., S.S.; NASLFDOV, D.N.;
TS ARENKOV, B. V.
Effect of impurities on the recombination radiation spectra
of gallium arsenide. Fiz. tver. tela 7 no.100115-3118 0 165.
(MIRA lgill)
1. Fiziko-tekhnicheskiy institut imeni loffe AN SSSR, Leningrad.

-
ll--~'- - -
, , j~ , - ~Z.C- ~i r.,. -7
, ~.r, .4'. :..", . -

I-A
Tr~
klo em at
"80 *h&-"20K '*tb- ti-n-vaerat
ure
Wand .51-
ammol W.

I-A
AWL
im~ of
Yon Agat,

ZIA
I-F

TITIE;- Me. scatterimg nie.chanisni of current -carriers of tellurium doped gallium -

t

WIMM-a-M Bantam" -

9
CESSION NRj,

~7 Figare: 3, Temperature-madependence of electrah
.

.
A
i-
mobility f6r-.samples 2n.and 10n.
V. er n

e scatt I
oalculated mobility for th
a Va a -lattice-r.oscillittiong
on pol r
calculated mobility for the scatterb
on acou tic-lattice oscillations
S

jut
M - AV

-Q~

777 77:

Card-:1/2
- -7 . '.
~. - 1. n_ -,

4-90URU - 9
t 6-~ U.I--- -, -

_w
r, )AINIKIMMAW

ALP

j :98
1 MW -AW-17"
,
jam

voltap
"J'A ',wnuw of
rO. At
am v almoww"
WW_ FIVEN
nZ

NASLEDOV, D.N., prof.
Symposillm on semiconductors held in Warsaw. Vest. AN SSSP 35 no.2:
87 F 165. IP:3,

m~torlali
to over

fossetich of
'444W. riv valad
OD
0~' 300 wA)' And
-tbwAw"ntjj*~go*ffjcjen~t of
t1w
:41 'A' 11001,111irt'".
4W it,
~~777 7 gm 08 at
vw for only am of
iod
a ta"ra.
the
of ams
W. 1- 0"r,w wide tm"rw
astaule
SM lost4mom

L 2967 ZWT(d)/c1,P(k)/8WPQ) JKT 'v
ACCESSION M: AP3WfiYN UR/0l05/64/WO/OO9/0M/OO9b
AMMt QnVtWvv~V. K.- Y- a.;
.
Sat
s",Pp-S.; Tii~rlin. 4. D.; Alokseyev. A. Yo.g
7561~indits 14,- YP -,- Berger. A. Ta.; Tavorskly. V. W.1 ~sslodoyl D. NO: 1~ S-
71
TITLE: Mikolay Wikolayevich-loAtsertkaj (Obituary)
SOURCE: glektrichostvo. no. 9. 1964, 93-0
TOPIC TAGSs electric onginse.-ing persomwl
ABSTRACT: Doctor of 24achnical Balance*, Uajor General In the Technical
Engineering Service. Professor 1. 9. lutsanko died In MW of this year
after a ImM and serious 111afts. He gradmated from the Wassm, HI&or
Technical AaadwW to 1924 and vu closely associated with his spoeialty
.of electrical engineering Ull Ww end of his Zito. No speat %b9 first
years of his prootleal aot1v11W at the AoadsW workift In to alostriGal
engin9oriag laboratory of It. A. Ibmag. After that be be" his career In
the Soviet ArW am a 1swU laboratory assistant In she nkdl*WWnlml
laborato3w ~* werin& hu war vp sm turv 7"" is be hema of the
card I/ a

L 2967-Z6
ACCFSSION NR t AP5026357
Dopertniont of i9leatrioal and 11111tary hngIji*arIag. No wrote several boolm,
-Alternating Carrents.n "The Theory of Alternating Correct&." "Course In
'Gamoral Sloctrioal UnClasering." *Radio Enower1W mt. topther vdtb his
-a*-worlasro. problen Isocks on *A Course In Alternating Carressts" arA "The
Yooloal Friw1plee of Jasoltrical Englaserl".0 No set up a musiber of
speaW courses (military s"21cation of *!*atria power. mill" portablo
ol"tric pmr stationot electric equipment for armies. electrification
of military sagineerl" wafts. eta.) and also participat" In now engineer-
ive projects with the Soviet Am. No has written MW textbooks. mosso-
graphs and articles on Sbe theoretical end aWled diviolesiss of military
electrical sisonsorive. Theso Include "22ootrio Circuits" am& wyandspeo;Ws
for Use Doellp mad namalag of Hobtle Mootrie statlaw.0 low of 2. N.
IMSSOWW'S students an Orklag Is MUOM of thlb SOW161 AnW, 18 11411MUtte
ismusatee ssisd is Genoese. MA Is 1114114"s Ike" OWASSU we 64SUM114 /*
OW WON of falelt $"Off, as fam"r of owm oweary 01"tridel "00"r-
INS. no "Solve& big lp In It" Ma Isla deetwase in 19490 so
ba P"61"A so 0* Ift ftaw d so out
SW* MO EM 11"W0, OrM6 mt@ bass I flgwee
go
ID W
Cod 2/1

16065-0 -
77
Udw
44
so
to or
cw somw
lAto the
obm~ in
the
AAw
All
mpm lau

L 33250-" WLSIA-Wo/m Tj C) a V-J-G
ACC N& A0026231 SOURCE CODZ: UR/0058765/000/01VED6579175
I 1*dov D- -741
AUTHOR: PA"Isho Z. z
TITINs Scatterlag of electrons by impurity atoms in Sallium arsenide
SOUR=: Rot. ah. Pftika, Abe. 11Z509
MW SOURM Sb* Fiziks. Dokl- k XXnI Nauchn. konferentaii Tan' inzh. -stroit.
in-ta. L., X96% 21-26
TAGSs Ke'llu- arsenide, electron scattering, imWity scattering, temperature
vibration , N&U constant, actIvation energy, electron mobIlIty, crystal lattice
ABSTWT: The authors investigated the temperature dependences (85 - 750K) of the
Hall coefficient mid of the electric conductivity of GaAs crystals with electron den-;
X 1018 cjj-3 at
sity 1.1 x 2013 - 2.8 300K. The results offer evidence of the pre-
sence of donors with activation energy 0.14 1 0.03 ev, whose concentration in the in-I
vestigated crystals does not exceed 3 x IDIS cm-3. Me obtained values of the mobili.W.;
ty agree with the calculated ones when account is taken of the scattering of electronj
by the following: a) lattice vibrations, b) impurity ions, c) neutral atoms of im-
purity with donor level 0.14 ev. The large contribution of scattering by neutral
atam at T < 4WK is noted. Ye. Movehan. [Translation of abstract)
SUB CODE: 20
Card 1/ 1

---x A

zom,
47

74-1 -".Wdr,
0 0.,
W

-ou =I

~jl)AWTW 047wpt 1 la Intel L
-NOW WSM399,
saimm, owl uRrd
.7 Z

L:3928-667--

3C
AP

f E D " . ; 1. EG fl KS KTTL , ii . v . ; ~cA m i rrS A 14 , 7 . ' . ; ';-~ . ..
-- -- - tl'. ~ ..
r 11 .
a -,r;CoLriu C, t I V, ty 08 r ! 12 a t -., '* n Ggap. ?---. z . ,.-.-
M
3671-3673 D 165 ..1 1
I . P, z i-k o-t ekhn I c he sk iy ins t i t ii t i Hi er. i 1 ri f f t-;;# - ~, ?:, d
i :ris t. i tu t p r i k ', i An oy f i z i k I AN Mo I dliv 6 K c y f -.'7, , -. i ... 1, I.., -.

BP,TKEI.IYF,V, A.D.; GAIAVANOV, V.V.; hIASLED( :'-11?1-.D.N~..
Rffect of a deep acceptor level cri the eleatric Properties of
p-Tri5b. FIz. tver. tela 7 no. 120685-36e9 D 165 (Ml."A 190.)
1. Flziko-tekimicheskiy Institut imeni Taffe AN OSSIR, IAnlngrad.

.-91A35-66- -R~.rrft) /EVJIP t) -.IJPI(C) JQ/J,--/AT-
"02048--~-:.- -So /,00301#510
u
KC 12/002/KO93/a9S
act
.1140
JA
110t,*_'J'_,~: kv"4L*"* i 1 411 *16918 104 ~40fffofj_ -Aca4euT of Selemess-
SOVICte Ip -","Al totes soiLIA1 '120. *OIL* 20 196s .0 1.9 3 T,'O 5
tit A
44"it"40-, it, a I i t
6 0 04 f f ".1" VkOrmoolectric powelf,
:~:Oz OT__r, to - 0own
TA 4 he affective sees M* of
t t
L# NX&C A tee 41i ctl7-tl-
av the is ~ made , -a'
eswurenests of the Hall
;C--Jit 06-
of. seuleoudv~cters
tberjoele~Ciirie po**;
agatlili 'effect. zu all
t q4tal
MK,,Plmw,~,~!W~_ Pz, _,(0I_,*L. -4K 19--4 3) were
-Ai-___4i~_-jfI4i4 led ondest (42).
_7 4` Op
~ajd of 'the f Mejk&~

21435-66
-AC
C? NL- AP6002046
-.-a f 6- c t I ve
An
87.2 mo~:O- t" be ton of. tb
yet. a -
deviation.
8-10 tivo n&$is- of Samples
alp at the bottom of
4640- Ok-tilili-SCOY 'other motbode
Re,#. 1249
samples
Lupur t7. - an The- ~authev
-.iat44674titailued "at varleue~.-
I table,
elm
on, Mrs - "I-

44ty tbal V"i4

-~IJPCQ) AT-
AM06831 SOURC
E cour.: MtQIRI/66100,8/002/0475/0477
il TIP.
lao N~w
IUW"' W''--
14
'Irv

7,1 _F
-tram

7 7

ant
it
~,o :Aro. "site, &**lost*

spri
'TO- I" ebta two time
metal", 406164i.. too P&I
pig
_"m -Mrs
Gee
IT,
cr
'M
4-1
n~t ~gn in f, 'A
_i!ij ~7
'41'ZI,
MS"
_72 ,I " ~i: '~r ~-f ~ . -'. - ,-, - . . _j
"kt-
NA"
k' 1, if
q~ A,
m li~
i
4 J_
;rfr~~M' ~_e
4-W
7qJ i Jig '1' r A!
AC;
--------- -
In
ism

GGI/JE) /1-rD __2
~13C~~.7
ACC NA& A160IM70 Aid CON: UIV0182/66/6WO04/MV
.-MMORt. Nealedurs Do No: RUM Do 0.
rAmicatia __~Itute In. A. F, loffe, AN 8682, Leni3W (Fisiko-
UffinIchoWdy lartItut AN
2IM: jjCM" of &tjMgtM -g np the electric proportion of p-JOILat Im tem-
fts1ka kv tela, V. 8, no. 4, xQ66, liw-iu4
TAGS: crystal -lattice structure, prystal defect,, Indium campoundp antimonidej,
band structure,, temweraftre dependence,, electric propertyp Hall effectp
con&wtiv:Lty
ABSTRACT: 2b check an the IWpothesis that Ir5b contains msiltipIy charged defects
'Ibleb we responsible for the recombizabSca of non-equillbrius carriers in It,, and
to "certain the lonmace of Mich dafacts an the tampasto ~ dependence of the Hall
coefficient in on h%Uy comWamted Bowles, the SUM=@ seamed In the texpa's-
ture mega 4-]MK the ~ togmmmture dependence of the Hall constant and of the dark and
th ho dew
illuminated electric -conductivItisaj, using p-L30b samp),es vi Is ity .1-2 x 1021
cmr3 (at 7710 * In preparation of the samples and the cryostat in vhich the measure-
Q6
-vents v= me& Awe In an earlier pqW (PM Y. 3,9 3031p X 3). The low
natic neMused4i-the wasmveedta vas close to 3000 Oe. 2a Impurity levolx
vow& 3.vift at 0.220 0.033,, and 0.008 ev Above the valene* berd. Analysis
obsevvi4.
card

L 29958-66
i ACC NRs A P601 ~~81 SOURCr., CODE: Uli/ol8l/66/008/004/1176/1181
AUTHORS; Kesamanly- F. P.; Malltsev, Yu. V.; Nasledov, D. N.;
lUkhanov, Yu. I.; Filipchenko, A. S.
'ORG: Physicotechnical Institute im. A. F.-Ioffe AN SSSR, Leningrad
I(Fiziko-tekhnicheakiy institut AN SSSR)
TITLE: Magnetooptical Investigations of the conduction band of InSb
SOURCE: Fizlka tverdogo tela, v. 8, no. 4, 1966, 1176-101
!TOPIC TAGS: indium compound, antimonide, magnetooptic effect, conduc-
Ition band, Faraday effect, light reflection, dielectric constant
ABSTRACT: The authors investigated the optical reflection, transparency
and locat'on of the plane of polarization (Faraday effect) In the wave-
length ir,erval from 2 to 25 4 at temperatures from 130 to 550K and
~
19 -3
electron densities from intrinsle to 1.2 x 10 cm , with an aim at
;checking the validit of the theory proposed by E. 0. Kane (Phys. Chem.
;Sol. v. 1, 249, 1957~. The apparatus used for the measurements was
:described by the authors earlier (Izv. AN SSSR ser. fiz. v. 28, 989,
i1964 and ~--arlier papers). InSb single crystals doped with Se were drawn
from the melt by the Czochralski method. The reflection coefficient
Card .1/2

L 29958-66
ACC NFI, AP6012481
exhibited a slow decrease with increasing wavelength, a sharp rainimum in!
.ithe range between 10 and 17 4 (depending on the electron density), and '
ia steep increase. The value obtained for the lattice dielectric constantl
jis 16.0 + 0.1, which is in good agreement with published data. The ef- I
Ifective Zass of the electrons was found to be 0.071, 0-053, aad 0.033 i
!times the free electron mass (m.) at electron concentrations 12, 6, and
i 18 -3
12.6 x 10 cm when calculated from the plasma reflection and 0.018,
0.021, 0.027, 0.038, and 0.054 m for electron densities 2.5, 4# 7*5j, i
10 -3 0 1
26o, and 6oo x lo cm by using the Faraday effect. The experimental
dependence of the energy on the wave number agreed with Kanels calcula-
19 -3
Itions up to electron densities 1.2 x 10 cm Some deviations from
:L8 -3
Kanels theory are observed at densities greater than 5 x 10 cm and.
,call for a special analysis. Orig. art. has: 5 figures and 6 formulas
I
:SUB CODE: 20/ SUBM DATE: 13Sep65/ ORIG REF: 003/ OTH REF: Oll

EEG(k)-,2/KWP(k)/EWr(1 (Fdr(m) -Wp(t)/Erj lip(c) wlin
,FM)/T/h
.AP6024502 SOURCE ODDE: UR/0181/66/008/007/2251/2253
AUTHOR: Gol'dberg, Yu. A.; Nasledov, D. N.; Tsareakov, B. V.
ORG: PUsicotechnical Institute in. A. F. lof fe, M SSSR, Leningrad (Fiziko-
takhnichookly Institut M SSSR)
.21 -1
TITIZ: Dependence of electroluminescent parameters of 11" lasers on the angle
between the p-n junction plane and the resonator mirrors 7,1
SOURCE: Mike twerdogo tale. v. 8, no. 7, 1966, 2251-2253
TOPIC TAGS: semIcCWductor laser, gallium arsenide laser, diode laser, laser output.,
JUL". sq__Gpa~&
TRAM Um threshold current density and the output of diode laaer~ were inves-
tigated experimentally as a function of the angle (4 - 90* 29) he-tween the p-n
junction plane (100) and the resonator mirrors placed in the (110) plans. It was
shown that: 1) the threshold current density decreased with an Increase In the
distance between mirrors I (Fig. 1), and with a decrease in the angle when I z coast
(Fig. 2); and 2) quantum yield Increased with a decrease In 0 (Fit. 2). The maxi-
sun angle Gmaz - d (where d - width of active madlum) for which the rermflected
T

L 37687-&
0
Fig. 1. Dependence of threshold
current density on the distance
bebmen mirrors
'00.0~_ _.
V 0 W W W
mIn
Fig. 2. Dependence of threshold current
density (curve 1) (for I - 0.7 am) and
quantum yield (curve 2) on the angle
between the p-n junction plane and reso-
nator mirrors

L 37687-66
F-Acc -NR. Ai
beam wl 11 travel the entire length of the active medium was estimated roughly at
W-18', for d = 2-3 pand I Z' 0.5-0.7 mm. Orig. art. has: 2 figure; and 2
formulas. JYKJ
SUB CON: 20/ SUBM DATE: 26jan66/ 07H RZF: 002/ ATD PRESS:,570 1//
61,
"-i J01,
Cw4 3/3

L .11' - 56 F-,'/T(I)/P T(m),/T,,"'-'JP(t)/ETI IJ:',c) AT,/JD/J-
ACC NNe
AP6026705 SOURCE CODS: UR/0181/66/008/008/2462/2465
AUTHOR: Danilova, T. N.; Kogan, L. M.; Meakin, S. S.; Masledov, D. X.; Teareakov, N.V.
ORG: 1~hyC4S!!-nS - F. loffe, AN SSSR, Leningrad (Finiko-
_M~WiKUW Institute In. A
tekhnicbeskly Institut AN SW R-)
TITLE: Comparative investigation of the recombination radiation 0 junc-
tions with and without a Fabry-Ferot resonator
SOURCE: Mika tvordogo, tels, v. 8, no. 8, 1966, 2462-2465
TOPIC TAGS: TabrymOminhLresonator, recombination radiation, pn d6eds, gaflium
arsenide
)
ABSTRACT: The published literature contains information on the investigation of spon-1
taneous, stimulated, and coherent radiation of GaAs p-n junctions pertaining to t e
characteristic radiation parameters as a function of the current for diodes with or
,without resonators. The purpose of the present article is to compare the dependences
of the maximum energy hvM and the half-width 6 of the fundamental radiation band on the
current density through a single p-n junction with and without a Fabry-Perot reso-
nator. The authors studied diodes In which the p-n junctions were V~talned Iby dif-
fusion of zinc in To-alloyed n-CaAs with electron concentration 7-IOl-3-10 hcm-3;
the area of the p-n junction =10-3cm. The current through the diode and the spectral,
distribution of radiation Intensity were measured. It was found that bv,, starting

L
ACC NR- AP6026705
from the lowest current densities a/cm2), increases with increasing current and
then becn is practically independent of the current. The dependence of 6 on current
density is given for small current densities (5--70 a/cm2). It is concluded from the
results presented that the primary narrowing of the spectrum occurs as a result of
population inversion at the rarefied states which are responsible for the secondary
narrowing of the spectrum, i.e., beyond the conventional stimulated and coherent ra-
diation with maximmis energy -1.47 ev. The "tails" in the forbidden zone are
probably the rarefied states responsible for the primary narrowing of the spectrum.
The authors thank 0. V. Konstantinov. V. 1. Pavel', and A. L. gfroa for discussing
the results of thLi7;or'i.__4Wig. -art. i~:2__figures. 1261
SUB COBB: 20/ SUM DATE: 26Jan66/ ORIG REF: 001/ OTH RIF: 001/ ATD PRESS- 6-06~
e

L 44602-66 EViT(1)/EVIT(m)/EEG(k)-2/T/EViP(k)/EtVP(t)/EtI Ijp(c) --iCIjDljr
ACC Nit, AP6030977 SOURCE CODE: UR/0181166/0081009/2789/2791
AUTHOR: Kogan, L. M.; Libov, L. D.; Nasledov, D. N.; Nikitina, T.
Strakhovs Tzarenkov, B. V.
GRG: PUsicatechnical Institute im. A. F. Ioffe&AN SSSR, Leningrad (Fiziko-
cekhnfc-heskiy institut AN SSSR); Physics Institute im. P. N. Lebedev AN SSSR, Moscow
(Fizicheakiy institut AN SSSR)
IV
TITLE: Certain properties of GaAs laser diodes with an epitaxial p-n junction at
room temperature
SOURCE: Fizika tverdogo tela, v. 8, no. 9, 1966, 2789-2791
TOPIC TAGS: solid state laser, semiconductor laser, gallium arsenidellaser, epitaxial
diode, infrared laser$ A- a Ae 0 "Jim.)
~W -.rvAlerlo / I
ABSTRACT: In an experimental investigation of epitaxial p-n GaAs junctions,telluriuu-!
doped n-type and zinc-do~ed p-type GaAs was used. The electron concentration in the
n-type GaAs was 5.5 x 10 7-2.4 x 1018 cm-3; the hole concentration in the p-type GaAs
was 1.5 x 1018-2.4 x 1019 cm-3. The specimens were oriented along the (100) plane
and the epitaxial p-n junction was prepared from the liquid phase by a method descrRed
elsewhere (H. Nelson, RCA Rev., 24, 603, 1963). The dislocation density near the p-n
junction in the epitaxial layers did not exceed that in the wafer and was 104 cm"2.
The Fabry-Perot cavity was formed by the cleaved (110) surfaces,and the electrical

L 44602-66
ACC NR. AP6030977
contacts were made of indium. The residual resistance of a diode with an area of
10-3 CM2 was less than 0.1 ohm. Laser action at room temperature was achieved with
30-nanosec current pulses. An FEU-22 photomultiplier recorded the optical output.
The threshold currents were determined from the dependence of intensity on current.
The p-type GaAs specimens with hole concentrations of 2.4 x 1019 cm-3 and a mobility
of 50 cmz/v-sec lased at 90001 at threshold currents of 1.5 x 105 amp/CE2. Investi-
gachns sere also made cfspecimens in which the epitaxial layer, doped with zinc and
partly compensated by lead, wa grown on a tellurium-doped GaAs substrate with an
electron concentration of 9.5 : 1017 cm-3and a mobility of 2400 cm2/v.sec. 7hese
lased at room temperature at 9010 X at currents of 3.8 x 105 amp/CM2 and at 8910
at currents of 4.7 x 105 Mp/cm2 and up. The power per pass of p-CAAs lasers was
30 watts with 700-amp currents and 18-nanosec pulses; that of n-GaAs lasers was
10 watts with 300-aup currents and 30-nanosec pulses. Orig. art. has: 1 figure. JYKJ
SUB CODE: 20/ SUBM DATE: 2SMar66/ ORIG REF: 001/ OTH RE?: 003/ ATD PRESS:
5078

ri-106-06~29- SOURCE
AUTBOR: Xogan, L. M.; M~skin, S. S.; Nasledov, D. N.; Trushina, V. Ye.; Tsarenkov,BA'
CRG: P~nlco-Technical Institute im. A. F. Ioffe.AN SSSR (Fiziko-tekhnicheskly
insfitut AN SSSR) (2()
TITIZ: Electron-photoAaAsVI ?
transistor
SOURCE: Radiotekhnika I alektronika, v. 11, no. 9, 1966, 1645-1650
TOPIC TAGS: transiBtor, electron photon transistor, gallium arsenide transistor I
ABSTRACT: The results of an experimental investigation of GaAs electron-photon
transistors(R. Rediker et al., Proc. 1763, 51, 1, 218) at 77 and 293K are
reported. The transistors were made from Tjjdoped n-GaAs. Source meterial parameters:.
electron concentration, 7 x 1O17 - 5 x 10 per am3; mobility, 1800-3200 cr&2/v seell
dislocation density, 10000 per cm2; p-n-p structure was produced by Zn diffusion;
plate thickness, 300 u ; base thickness, 100-200 w ; p-region thickness, 50-100 u
Collector current vs. collector voltage characteristics (for 0-100 amp/cm2 ezrdtter
current) and collector current vs. emitter current characteristics are shown. The
emitter-collector current transfer ratio was found to increase from 0-05 to 0.075
with the collector voltage increasing from 0 to 8 v, at 77K. At room temperature,
th,.j transfer ratio amounts to 1/20-th of the liquid-nitrogen ratio. When the emitter
Card 112 UDC: 539-293-011-43

ACC NR. AP6031029
current increases from 0.1 to 0.5 amP, the power gain decreases from 12 to 4 and
the voltage gain, from 350 to 60 (at 77K). The estimated total quantum yield of
photons Is 0.1 at 77K. Desirability is noted and ways are indicated for making
the electron-photon transistor a practical amplifier. Orig. art. has: 4 figures
and I formula. (031
SUB CODE: 09 / SUM DATE: 29Mar65 I ORID REF.- 003 / OTH REF: 006 / ATD PRESS: 5089
Card 2/ 2 afs

ACC NR1 06030161 SOURCE CODE: UR/0120/66/000/00410214/0215
AMOR: Belawyat A. A.1 Nazledov, D. N.1 Sres a 00 me
ORG: Lvico-Te6nical batitute AN SSSR, Lenirwad (nziko-t*Wudah&sk~r institut
AN SSSR)
TITLE: Thermostable Hall zeneratore
SOURCE: Pribory i tekhnika eksperimenta, no. 4, 1966, 214-215
TOPIC TAGS: Hall generator, Hall effect
ABSTRACT: Xateria.1a in the manufacture of Hall generators and characteristics of
the latter are devaribed. Source material: GaLs having a concentration of
(3.-8)10116 per cz0 and a mobility of 3000 cmg/v see. Sides ratio: 2 to 3; plate
thickness, 0.12--W =; nonrectitying contacts. Characteristics: temperature
coefficient, 0.01--G .030 per IC within 0-300C. Voltage sensitivity, 10-50 WY/06.=
Kots of output voltage vs. magnetic-field strength and output voltage v9.
temperature (0-300C) are shown. Orig. art. has: 2 figures. [031
SUB CONS 09 / SUM AtT31 13Jul65 / Ono REFt 000 / ATD PRESS: 5087
1 pb UDC: 621.

'J
ACC W Ap6012468
AUTHOR: Koichanova. N. )h.
2
SOURCE CODE:
uR/oi8iJ66/oo8/oo4/1097/uo4 //
GG: ical Institute In. A. F. Ioffe. M MR.
-08skly Institut AN 680R)
2XIM: TiMperetwo depoWence of the :iarrier lifetime In r-Ap&%,
MI'M PUIM tvadw tout To 8P Doe 4P 1966, WqT-L104 5.7
20PZC TW6: gLWun aroosidep semiconductor carrierp carrier lifetimes photoconduc- I
tivity., pbotangnotle offset, photo eaf, temperature dependence, forbidden band
ABSTRACT: In view of the interest In the pbotoelectric propm lee of GeAs as a sidt-
able light-source material, the authors investigated the temperature dependence of
the photocondUctivity and the photomognetic effect# and the spectral distribution of
the photo-ont aM Its texpersture variation, In the temperature interval 80-300K.
The tesperstar dependence of the carrier lifetime was determined then from these
e3werl so The amwed. GaAs single crystals were of the n-type and vere obtained
by zone meltIng without special "Be The electric prqperties of the Mstals were
determined In earlier wqm"'me-nts M V. 3, 198, 2961). The surface finishing of
the crystals prior to the measurement of the photoelectric properties was by a method
described PrwlouQY (F= v- 5, 3259, 1963) - The light was either monocbromat ic
JTW ra) or in a spectrus., ranging from 6oo-&)o nn. With decreasing teMWature I
startin at tempersture)t the lifetime or the majority carriers first increasedl
"it th dependent of the temperature, followed by a second increase at the
Cmd 1/2

-1 0222"2 EWT(I)IF.WT(M)/EWP(w)/T/EWP(t)/ETI 1JP(C) JD
A%X; NMI JIM13DT2 SOURCE COIDE: uW66*996-6-676-16/k7002M
AUTHOR: X"emnly,, y. p.; ]W.; age',
ft. V.
TITW: TranapIort ZaGe"a crystals
SOURCE: Ref. sh, jPJzIkj4 Abs. j0Z%q il
W SOURCE: Sb. FISAIL. DoU. k M(III NELuchn. k-onf-ereft-si-i- LeniW
in-ta. L.,, l96% 5j--W--
TOPIC TAGS: electric C00ductivity, Hall coefficient, thermal enf, temperature do-
Pendences transPort Propertra carrier scatterine, bw~A-Wec_14- I "vA~.'
AB67WT: The &Utbor* Wasured the tw*er4ture dependence or the 61"tLectric conductlyl.
ty (a)# the ULU cawtant, the differential thermal emf (cL),, and the transverse
Nernst-Ettlagabowen Offftt (X) of ZnGeAs.. In the teveraturs interval 100-550K. The
character of the tuqpnture dependence jf &11 th~'transport affect is
for P-ZnSnJ42a* It VW found that a and m increase with the temperature,, X < 0 in the
entire teNTOPStUre Iftervalp and that the W1.1 -.iobillty increases like up to
400K, after Which It decreases. At low tengwratures the scattering Is by the Impuri-
tY ionsp mid with I=ws"Ing temperature, also by the lattice vIbrations. [Transia-
tion Of abstract)
SUB CODE: 2D

AMOR: r A. S. Do *; fifidinews To a.;
036: jotft nwico-Tedwimi Instituto. Awdemy of m*Jm. Ladvorad
TITLCs On the second conduction band In Isdium antimmide,
809=: nplea atstas solidt, w. III, no. 2, 11669 KI95-IM99
TWIC TAGS: hWm ampound, antimoulde, conduction bend, Hall effiect, Fermi lowel,
OISCUM `tVISM&ItIGR
ABSTRWT: OM we pinsented to sbow the exLeteme of a condwtion bwA In In8b loc4
ed about 0.5 ev, ihom the bottom of the main conduction bend (000). The vi" In the
Hall coefficigpt witb tmpn*we was measured In 14 IMIm antimmide samples dop~4
wift nlmlvnftr teLlarium. The hypoftesis Oat We rise Le dm to alectran trmel-
tions -toe second conduction we tested and the value of the gap deteralmd. WIS.
art. bes, 31 Ub"t 4 formul".
m 0=1 20/ SM DATC: O9NwGG/ - ORIC Mrs 004/ OrN KF: 005
cd vab

04791-61 EWT ( 1) IEWT (m~l ERE-',L~LETLi TP CC) dW A F
AP6024462 SOURCE WLE: UR/0181/66/008/007/20(44/201#7
AWHOR: QOinq A. 'A.; ftanwovq E. M. ;MWWlova , M.
ORG: ~hMiootedinical Institute im. A. F. loffe, AN (Fisiko-
tekhraRrmway Innitut AN SSM
MU: Photosewitivity spectm of p-n junctions in InAs in the photon energy range
0.9 - 5 ev I
SOURCE: Fizika tverdogo tela, v. 8, no. 7, 1966, 2044-2047
TOPIC TAGS: pn junction, photosensitivity, internal photoeffect, indium, owpound
optic material, arsenide, spectral distribution, absorption ooefficient, quantum yi~ldl
ABSTAACT: 7his is a continuation of earlier work (Frr v. 8, 712, 1966), where it was
obser%*ed that the spectral distribution of the quontum yield of the internal pbotoef-~-l
fect in the short-range region is connected with singularities of the band str`ucturle
of GaAs. The present work extends the investigation to InAs. The InAs p-n junctions
were obtained by diffusion of Cd in n-type material with electron dei-isity (0.5 - 1)
X 1017 cnr3 and were produced at a depth of several microns. The hole concentration
in the illuminated surface of the swple was approximately 1010 cnr3. Several p-n
junctions illuminated ficim the n-side were also tested. 7he long-wave part of the
spectral character-istic of the jurwtion was plotted with the aid of a ZMR-2 mono-
chrmator, and the measurements at higher energies were by the procedure described in
the ewlier paper. 7he measurements showed a narrcw long-save photosensitivity peak,
C,Wd 1/2

L, 04791-67
ACC NR' AP6024462
connected with the change of the absorption coefficient near the edge of the ground-
state band, followed by a mgion of weak variation, a faster grmoth at %0.7 - 1 ev
photon enerV, a rieversal followed by minimun near 3.2 ev, and a renewed gmwth at
higher energies. Mm results am shown to be connected with the variation of the
quantum yield of the internal photoeffect as a result of secondary icniwticn. 7he
threshold mmW of the photon, starting with shich the quantum yield begins to gmwt
is found to be 0.7 - 0.8 ev at 293K and 0.9 - 1 ev at 100K, in agremant with theo-
retioal cala-lations by others. 7he various secticna of the spectruin axe interpreted
m this basis, so it is indicated in the conclusion tat the actual quantm yield
may not be as lmqp as what foLlam f:rom theoretical acmiduutions, since account
must be taken of the priol~ty mtios; of the difftrint electsude UUNSWAM. MIX
authom thm* M. P. Yeaina and N. N. Sainum for pxmpmz6q Un bft " juncticm.
orig. at.
SUB OME: 20/ SM D=s 03Dmc65/ ONG MF: 002/ OSH W: 006
2/2 afs

L 04785-67 EWT(m)/EWP(t1/ETI I*c)
ACC NR1 AP6024467
JD
SOLMM OOIE: tMtOI81/66/008/007/2074/2076
AUDIDR: ZDtan, M. V. ; lebedayt A. A. ; Nasl*dDv . D. M. 41?
ORG: Mmiffnn!!!~- Institute im6 A. F. L-offe, M SSSR. Lmnittomd Criziko-
UI9CI%VM M -MSU-