SCIENTIFIC ABSTRACT KRIVOV, M. A. - KRIVOZUBOVA, N. V.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000826610012-5
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 14, 2000
• Sequence Number: 12
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

L 24360-66 EWT(m)/DJP,(w),/E.PF(n)-2/4r/Ewp(t) ijp(c) j D/c, G
ACC NR; AP60081 19 SOURCE CODE: UR/0)39/66/ooo/ooi/o1qo/o1q1
AUTHORS: Krivov, M. A.. Potakhova,_C._I.; Rybkina. L. P.
ORG: Siberian Physicotechnical Institute im, V. D. Kuznetsov
(SibeY_s iy f iziko-w_t_ek_hn1_c --instiruly)-
TITLE: On the Influence of gamma radiation on the microbardness of
SOURCE: IVUZ. Fizika, no. 1, 1966, igo-igi
TOPIC TAGS: silicon, hardness, gamma. Irradiation, crystal disloca-
tion, carrier density, Hall effect, crystal defect
ABSTRACT: The authors have measured the microhardness of n- and
p-type silicon before and after exposure to different doses of.,y
radlation. Since y radiation can produce additional dislocations and
change the carrier density, which in turn Influences the microbard-
ness, these quantltien were also measured mimultaneously w1th the
m1crohardnean, Tho Lmyiplerj of each type u,,,,ed for all the invel3tiga-
tions were cut from a aingle plate. In all caoca the niicrohardneaa
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Figures 1 and 2. Microhardnevs (H) and die-
'location density (V.) against the integral

24fe y-quantum
flux (T).

increased with increasing radiation dose
(Fig. 1). The change in microhardness can
be attributed to three causes -- change in
carrier density, appearance of displaced
:atoms., and change In diclocation density.
f'P. Hall-effect meaS Lire rwn ts have shown that the
change In carrier denelty does not exceed
6 -- 8% and Is comparable with the measure-
A'J# ment error. The displaced-atom density in-
1
creases In accordance with theory in propor-
tion to the integral y-quantum flux, and the

ow

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change in the dislocation denvity 13 shown In the Cigure. It is
therefore concludea that the lDcreaBe Jn microhardneos In d"e to the
incroaseri number of defects In the structure, caused by a simultaneous
Incrt-.-ase In the dislocation density and the appearance of a large
number of diaplaced atoms. Orig. art. has: I fiCure and I table.
SUB CODE: 20/ SUBM DATE: i8r)--c6li/ ORIG REF: 012/ OTH REF: 003
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AP6032547 SOURCE CODE: UR/013q/66/ooo/oo4/oo84/OO87
AUTHOR: Krivov, M. A.; Malyanov, S. V. 4~j
ORG: Siberian Physicotechnical Institute im. V. D. Kuznetsov (Sibirskiy fiziko-
tekhnicheskiy institut)
TITLE: Effect of germanium-;"-7
f x-40'v radiation on the clectrophysical
and germanium p-n junctions. II. Electrophysical properties of germanium irradiated
by hard x-rays
SOURCE: IVUZ. Fizika, no. 4, 1966, 84-87
TOPIC TAGS: germanium, p op-ert-Y P
I Ojos I t~L' -X?4~
ABSTRACT: An experimental ifivestigationwas made of the effect of hard x-radiation
on the properties of low- and high-resistance n- and p-type germanium. An RUP-200
industrial x-ray installation was used as the radiation source. Me dependence of
conductivity, concentration, and mobility of current carriers on the absorbed dose of
radiation was measured at source energies ranging from 90 to 180 kv and 1.5 to 4 ma.
The absorption coefficient of the x-ray was calculated by the method derived from
E. Segre (Experimental Nuclear Physics, in Russian translation: Eksperimentaltnava
yademaya fizika, 1, IL, ig6l)., re most interesting results were obtained at the max
imum x-ray tube wltaw(A = 0.13 since the absorption under these circumstances
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remained law (8-5 cm-1), extending the effects into the depth of the material and
changing sharply the photoelectric ally activated surplus carriers which lead to the
occurrence of low-level excitation (An(AP)