SCIENTIFIC ABSTRACT KOLOMIYETS, B.T. - KOLOMIYETS, B.T.

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• Collection: Scientific Abstracts
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• Document Creation Date: November 2, 2016
• Document Release Date: September 18, 2001
• Sequence Number: 6
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

The Investigation of Vitreous Segi-Conductore
Card 3/4
BOV/30-59-2-45/60
To Po Nazarova investigated the electric properties of
semiconductor glass.types in the'TlSe As Se- system.
2 .3
'Be To. Kolomlye te'spoke of research work in the field of inner
photoelectric --effect done :by To No- Mamontova.
Be Ve Pavl6v discussed experimental results of the position of
the absorption boundary an dependent on the change of
compoeition~of-glase types.
Ve P. Pozdnev reported.on material he obtained in the
investigation of the viscosity ot glass types in the
As 250 3 -As2 Te3system.
Be T.'Kolomiyets summarized the working results obtained by
the Physicotechnical Institute and found that in the materials
investigated the short-range order is not changed in the
transitipn frqm the vitreous into the crystalline state.
0. V. Mazurin, Leningradskiy khimiko-tekhnalogioheakiy kastitut
(Leningrad Chemicoteohnical Institute) described the
investigation of the semiconductor properties of silicate and
borosilicate glass types with the addition of iron-cobalt and
titanium oxides.

24 0
AUT11Oh5; Kolomiyets, B. T., Kamontovat T. If. SOV/20-125-1-10/67
TITLE: Lnternal Photoeffect in Molten Chalcogenide Glass
(Vnutrenny,v fotoeffekt v rasplavlennom khalikagenidnom stekle)
H"1110DICAL; Doklady Akademii nauk SSSR, 1959v Vol 125~ Nr 1p PP 13-74 (USSR)
ABSTRACT: The authors were interested not only in the existence of the
internal photooleatric offcots in the raolten phase but also
in the possibility of bringing evidence of the oonoorvation of
the structure of the short-range order in the transition of the
vitriform cemi4conductors under investigation from the solid into
the liquid phase by melting. The invariability of the spectral
distribution on the transition into the liquid phase may indeed
be indicative of the conservation of the short-range order,
and also measurements of the temperature dependence of
conductivity (Ref 4) point to it. A vitreous semiconductor of
the composition 4 As 2Se 3 * As 2To3 vas chosen for the
experiment. The measurements were made in a container provided
with platinum electrodes. The internal photoeffect in the
substance investigated remains conserved on the transition
Card 1/3 through the softening temperature, and the absolute value of

Internal Photoeffect in Molten Chalcogenide Glass SOV/20-125-1-18/67
photoconductivity remains practically unchanged in the whole
temperature range investigati)d (i.e. from 26 to 1840).
-A diagram shows the final reoults obtained from the experiments.
With a temperature exceecling,the softening temperature
by 28 to 300 photoconductivity does not change considerably.
At 1840 the material investigated behaved as a typical liquid.
A further increase in temperature intensified the "noisellp
which rendered measurements more difficult. The experimental
result obtained from the investigation under review proves
the existence of an internal photoeffect in molten substances,
which points to the conservation of the usual properties of
matter in the nquia state, as long as the character of the
interaction between the elements being present in the substance
investigated is not changed considerably. The absence of
variations in the spectral distribution is indicative of the
conservation of the short-range order in the temperature range
investigated. The observed shift of characteristios may be
caused by the temperature dependence of optical absorption.
There are I figures and 5 referencesi 3 of which are Soviet.
Card 2/3

~7
Internal Photoeffoot in Molten Chalcogenide Glass
ASSOCIATIONt Fiziko-tokhnicheakiy institut Akademii nauk SSSR
(Physico-technical Institute of the Academy of Sciences, USSR)
PRESENTED: November 19, 1958P by A. F. Ioffe, Academician
SUBMITTED: November 171 1950
Card 3/3

X0
AUTHOM ITAnoy4makiyj To lot Kolomiyqtag B# To 007,/M-127-1-36/65
TITLEs mependence of th Ia Via,th of the Forbidden Zone on the CoMpoeition
of the Solid Solution in the System In8b - G&Sb (Zavieimostf
shiriny zapreshohennoy zony ot sostava tverdogo rastvora v
sisteme InSb M G&3b)
PERIODICALs Dckla Akademli nauk asat 1959, Vol 127t Nr It PY 135-136
ABSTRAM Experiments made by 9ther research workers on this system
(Refs 2j, 3) to-ok.place with Inab-GaSb alloys, whose homogeneity
was not eafely ascertainedi 4enoet measuring results could not
be interpreted quantitatively, Solid eirale-phase allo3,e were
therefore prepared, whose homogeneity was checked by X-ray and
microstructural analysis. Permeability was measuredLwith the
infrared spectrometer IKS-14. On the strength of measurements
y of the absor
made the bounder, ption band was determined.
Figure I shows that the width of the-forbidden zone rises
steadily but non-linearly with rising GaSb content in the alloyo
Figure 2 illustrates this dependence in another connection, The
Card 1/1-1 ordinate is given by the wavelength corresponding to the

t70
744 44)
AUTHORS: 67258
Kolomiyets, B. T.0 jobing V. X. BOV/20-129-4-20/60

TITLE: Some Specific Features of the Photoelectric Effect in Amorphous
Layers of Arsenio Triselenide
PERIODIC": Doklady Akademii nauk SSSR, 1959, Vol 129, Nr 41 PP 7S9 - 792
(USSR)
ABSTRACT- The properties of arsenic chalcogenidee, i.e. the analogs of
antimony have hitherto not been investigated. Publications have
so far been giving only very scarce results of investigations
of the crystalline layers of As 2So 3* The present article do-
rat results obtained by investigating the sub-
torlboo the-fi
-
itao'c4s, of thi*
group, which.wore, found on arsenic triselonide
,
,
;ayerse The As So *as synthetized from elements having the rol-
. . . I I . 2 3
lowing,purity degrees: Se.99.990,.Aa.99.99 ... %. The layer was
-5
produced by vapprizingin a vacuum at.a pressure of p - 10
to-10 .=-Hg-on+.o polished glass bases (which have previously
partly been 6oated with a semitransparent conductive film o
Pt,AU,A1, or Snod. The A92303 layers had a thickness of
Card 1A

67258
Specific Pastures of the Photoelectric Effect in BOV/20-129-4-20/68
Amorphous Layers of Arsenic Triselenide
0-5 to 2 g. Onto this layerp semitransparent electrodes made
from Alp Au, or Ag were applied in vacuump so that the yroper-
ties could be investigated "transversely" to the layer. The
lay"O"re"As Se have.an amorphous structure. The dark carriers,
. 2 3 ' 1
wers1oles. In the course of longitudinal measurements
Qd I= 10 11 -10 12 Ohm.om was found for the specific-dark resin-
tanoe, and.in measurements transversal to the layer
ed 1'12 13 und. The layers had a high photo-
0 10 OhU.om was fo
6onductivity.which siirpassed that of the Sb 8 layers. In the
2.3
neasurenents carried out along the layers no photoolectrosotive
force existed. Howeverg in transversal measurements a photo-
electromotive force was'always observed,and it attained a value
of 6 'a 04 Y. The photoelectric effect in the As2se 3 layers - had
low viscosity, Besides, several interesting features of the
photoelectric effect were observed in the An SZ, layers, as
e.g. a temperature dependence of the yhotoello ic current an
Card 2/4

67258
Some Specific Features of,the Photoelectric Effect in SOV/20-129-4-20/68
Amorphous Layers of ArseniceTriselenide
aIspectral distribution of photoelectric sensitivity. A diagram
shown the dependence of the.photoconductivity logarithm and of
the temperature conductivity upon the reciprocal temperature in
longitudinal measurements. The dark conductivity ande at.iow
temperatures, also photoconductivity Increase exponentially with
increasing temperature. At higher temperature photoconductivity
decreases with increasing temperature. This ipay be-due to the
variation of ths-recombination conditions (increase of the re-,
combination rate) ofthe current carriers. This exponential in-
crease atlow temperatures Ing according to.the author&' opinion,
-a - The
dize'.to the."adhesion" of light-induced current cirrisi *
barrier mechanism and the exciton mechanism are) as the authors
believep only little probable. In transversal measurements the
CoOrse'.of'the spectral distribution curve of the photoelectric
effeotrdepends'.to.& considerable extent on the polarity of the
I
4pplied'voltage. In,the case of some sample '4 the,sign of the
PWO*66VOtroaotive foro6'als6 depended on 'the ways length. The
Othors ,,.also pro1dqtoedjsazple-s with-a common lower als.9trods'
r7'd'with~ Al) *~a with. dif'ferent !mgppr electrodes (Al and An).
cove 0
Catd 3/4 In -the case of. illumihaUon"o6M"iT4'76om the direofion of the

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RelatIca Detvean tte structure and VMS-rtlea of Gl~scfi
levstroplycv* X.S. Ornerel FrO.Ima of Structurc and Vro;,rtlex or Olasse3 59
propertiez In vith
Their Stxuct~re- 48
]!!.borodof, H~k. VitmouA Syatems and the Problem of Glass Str,ctare 55
Nature of the Chemical Bond and Stru~t~ tt 01"tez
)Q~Ilvr, R.L. (r~,tcr of Chtzical Science*]. Cac=ica Proreruen a Polymeric
Ql".-Forml.a 34fitoucco and tLe Return of VLtrlricatim 61
09t7uncva, TI.A, and B.T..Kolmlycts. Problem or vitrit:cstice, Ragularitus
IA CbxI.,o,,t.Id. Glslxis-~~ ?I
Tkrast~.rV V Gia4ti as a rolycs~r ?8
CoLrd 6p-
vltrecu~ state (cont.) swbo5
'Crystalicth.mistry of C;1.0
U10wo 31-V- [Ac*d~iciml- DI"4 StIvIture In I%* LIC;~.t a the Crystal. Cb=latry
4ir 91
Dificussim 98
rimm 621j". =11MMI 07 V1=Y-,=w
F"ed SI lice,
A'faustsuilk# A.I. 0.1 too prebitm of Crybtza roazo ro=tjoa Prea ruaj
115
Vitrification ?recess and Gloz-a 3-=zct,~ra
Mal lot C-heako. Ca the Problem of Formica the Glem-a Structure Puring
I~WU&Itlrq Prc-za 123
L!rpIa&kI3:h,j1.M,, O.A. Yealn, and V.7. ;4,4awitn. Aalftotrm of Electrical
-
Condactivity of F-ta
zlitts and ruiateu in y1tv 125
-C-d 7122
vitmoua state (C-L.) SOVA035
!er!uplenko, 11.11, On the Problem or Gl"A Foraicz 125
Cbec.alln, V.A.. end O.A. Tevin. Blectrolvals of Z-4qutd AaumIaocIl-c&tes
;"~aJe, I.T., and O.A. Yosin. Thtmdy=,.-~ or Fwol 5121cm
of Cs-1-rco-si%, all CLO-AI205-0102 By.t.ms 130
DIscussloo 251
Maehaol.. of VItriftcatzon
Vol-k.nobtayn. X.V. On the Atruct.ral ani ri-tic Ch.xwterlstlv~ f th.
Vitreous state 1.3.2
Anurriyeva, T..V., all M.V. volke.shtcyn. 0. tb* L~swhcvore M.Uod or
Studylaig the VItrIru4tIm of Palyutrs 158
1~oio-laft, I.A. Crptl,al Activity and Vitrifitat4m U2
4:&r4 O/M

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ARMs Syritskaya, S. 31.

TIM All-witieft Centers*** 04 the Ilt"Oss State
YMMIXULS Pan* I kargana, 1960, Be 3. " 43-0 (11332)
Atone?$ rM W AU-02104 004f*r-b** Of the Vitreous State ... b.L4 1A
toslacrad at Us aid of 1959- It was OrciAls-A Vr she
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reports an the stmature of glass, InfasUC.1los w4thole of no
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a" usbalsal yro"rsl*s Of glossae we" 4011,0"4. The c4zzz ... 20
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time "A result& of optisal methods. Yo. A. Torey-lo:blt. an Uh3
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1.
reports as fts problem of the vitreous states t *--1
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AMNEMdltX Imew 3" JLU-ftim Conference on Us Vitreous Stale "a held in
Samalwigred &I the and of 1959. It *np argicals.d by the rmatltut
tatimmu adliultv AN San (Inatitsto of the Chasiatry of silicates
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AUTHOR: Kolomiyets, B. T.
TITLEi Samioonducting glasses
B/081/61/000/021/048/094
B151 IB101
PERIODICALs Rererativnyy zhurnal. Khimiyaj no. 21p 1961, 306, abstract
21K253 (Sb. "Stekloobrazn. sostoyaniye". K.-L., AN SSBA,
19601 449 454. Diskus., 478-479)
TFXTs Several works of Soviet investigators in the field of ohaloogenic
glasses (with compositiorscontaining S, Se,or Te) are reviewed. Brief
summaries of thle results obtained from the study of new groups of oxide
and chalcogenic glasses are givenb A program of work in this field for the
future is'set out. [Abstracter-s notet Complete translation.]
Card 1/1

30619
3/038/6-1/000/008/026/044
A05VA101
AUTHORSt Manontova, T. N., Hazarova, T. F.
T I TUB i Eleotrio properties of ah&1OoS6',a4de glasses
PERIODICALi ReferativW zbarnal, Pitika, no. 8, 1961, 199, abstraot 8D76 (V ab.
"Stakloobrazn, sostoyaniya". M.-L., AS ig6o, 465-470, disa.
478-479%,
TEM Data on the eleotrie ocndnotivity, aotivation ene'.W. and intrinsio
phot.oaffoot of various ch*loogenide glasses (1) ars given. All the investigated
glasses have patype conduotivity that in pr,%2emed .11, tha solid and wlten states,
and are typioal aemiooriduetors. The charraoter of I.,;1he variation with oomposition
of the electrio properties and of a number of physlocohemical properties Is the
same as in systems of solid substitution solution ;t irtystalline substanoes.
Inoident to orystallizition of (1) the conduotivity inoreasas very sharply,
Inoident to orystallization, of a number of thoza glasses the olose order remains
conatint. It was'eotablishad that Impuritlev that ars'eleotriaally active in the
brys-'Cal are inaotive In a glass produced from a melt of this crystal.
rAbstracter's notej Complet~ translationi
Card 1/1

9/181/60/002/01/06/035
17,2/ 00 BOO8/BO11
AUTHORS: Kolomiyetep B. Top Pozdnev, V. P.
I-MoMMEMW
TITLE: Vitreous Semiconductors 7. Viscosit) 50f Vitreous Semi-
conductors of Gh_e-�y_eTem As Te-__-_Ys_,Te
2 3 =Mazz4-
PERIODICAL; Fizika tverdogo tolaq 19609 Vol. 2, No. 1p pp. 28 - 34
TEXT; The authors investigated the temperature dependence of viscosity
in ohaloogenide glasseo.\IThey tested glasses of As 2Be 3 -As2To 3? whose
properties are partly known. With a view to determining the temperature
dependence of viscosity and its temperature course at different composi-
tionsq the compositions specified in Table 1 were studied in the system
concerned. The apparatus used for measuring viscosity was sinilar to
the one described by A. R. Regell in his dissertation (nef. 6). The er-
rors in measurement did not exceed 5%. The results obtained from the
measurement of the absolute values of the kinematic viscosity in the
temperature range 400-SOOOC are compiled in Table 2. Fig. 2 is a graph
depicting the temperature dependence of the logarithm of the kinematic
Card 1/4

Vitreous Semiconductors. 7. Viscosity of S1181J6010021011061035
Vitreous Semiconductors of the System Booe/BOII
A82se 3 - As2Te 3
visoosity in OG for glasses of the system As.Se 3 - A92Te 3 of three dif-
feront compofiltions. Another graph In Fig. 3 illustrates the dependenoe
of the logarithm of kinematic viscosity on the composition at 425 and
69000. The calculated values of the activation energy E and of the &a-
tivation entropy a of the viscous flow are specified in Table 3. Pig. 4
shows P - f(T) (F - free activation energy of the viscous flow) for
glasses of the system As 2Se 3 -As 2Te 3' The following statements are
made on the strength'of data obtained: 1) The absolute values of the
kinematic viecosity of semiconducting chaloogenide glasses of the sys-
tem As 2Se 3 - As2Te3 lie at temperatures of about 4000C in the range
10 2 10-1 stokeng and at temperatures of - 7000C in the range
10-1 10-2 atokes. 2) The viscosity of all glasses of the :yeten under
consideration drops steadily in the inyastigated temperatur ran 9 with
'g
a temperature rise, namely, in such a way that 8 of the respect*ve
glass remains stable for any temperature. 3) On the transition f.rom
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Vitraoue Semiconductors* To Viscosity of 3/181/60/002/01/06/035
Vitreous Semiconductors of the System Booe/BOII
As2Be 3 -As 2To 3"
oompo%ition As2Be3 to composition As 2$o 34 A92T e,q viscosity drops gradual-
ly with the given temperature. 4) The free activation energy of the via-
oous flow steadily drops with a rise in temperature, ead the more so the
higher the To-oontent in the glass. 5) On the transition from An 2so3
glass to A82 Be 30 An2To 39 E shows a tendency to decreasing. 6) The glasses
have a positive 8 which.lies in the range T.2 - 8.75 cal/mole.deg. Fig-5
shows the structure of As2Se3 glasep and Fig. 6 the structure of the
glasses in the system As 2Be 3 -As2 ToY On comparing the semiconducting
chaloogenide glasses of the system As 2Be 3 -As 2To3with oxide glassesp
the authors ascertained the following differences: The softening tem-
perstures of semiconducting glasses are lowerp and the absolute value
of their viscosity is considerably smiller as compared with oxide
glasses. The work was-done with the participation of L.- S_._ Kirlyanovaq
graduate student of LOU (Leningrad State University). Moreovert mention
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Vitreous Semiconductorso 7o Viscosity of 8/181/60/002/01/o6/035
Vitreous semiconductors of the System BOO8/BO11
As2Be3 As 27e3
is made of Ye. G. Shvidkovskiyp Pries, V. V. Tarasovq and Khusn. Si-khuay.
Table I speoizies vae cottoning temperatures of glasses of the syszem
As2So3 As2 To3measured by V. P. Shilo. There are 6 figareso 3 tables,
and g.reforences: 8 Soviet and I German.
ASSOCIATION: Leningradskiy fiziko-tekhnioheskiy institut AN SSSR
(Leningr!~d.Institute of Physics and Technology, AS USSR)
SUBMITTED: April 59 1959
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S11 81/60/002/01/12/035
B0081BOI I
AUTHORS: Koloniyets.'B. T., Lyubin. V. X.
TITLE: On the Mechanism of PhotoconductivitAin Amorphous
Chaloogenide Layers
PERIODICAL: Fizika tverdogo tals, 1960, Vol. 2, No- 1, PP- 52 - 54
TEXT: The authors investigated the dependencesof the photoourrent on
exposure at increased temperaturee'and the temperature oourse of the
photbourrent in a wide exposure,range on a semiconductor layer. Amor-
phous Sb S - rdv in part, As Se 1 era were used.for the purpose.
1 2 3 'k - 2 3 Illy
The results obtained jan be evidently extended also to other amorphous
photoconductive layeray above all, other antimony and arsenic chaloo-
genides. The methods applied were the same as those of Refs. 1-3-
Fig. 1 illustrates typical lux-ampere characteristics of amorphous
layers at different temperatures. The presence of two graaients at room
temperature waslexplained by the assumption of two recombination mecha-
nisms which occur in CdS samples, Fig* 2 shows typical dependences of
/C
Card I

On the Mechanism of Photoconductivity in S/181/60/002/01/12/035
Amorphous Chalcogenide Layers B008/30ii
the photocurrent logarithm on the inversion temperaturep that were taken
at different exposure values on the photoconductor. Experimental data
indicate that photocurrents in amorphous photooonductive layers show
two opposite tendencies with a rise in temperatureo The exponential tem-
perature dependence of the effective carrier mobility is dealt with in
Refso 9 and 10. In amorphous photoconductive layers the second meoha-
nism described in Ref. 10 seems to prevail. This is the steplike mecha-
nism which is characterized by a discontinuous motion of the carriers,
due to their fladhesion". The investigations carried out point to a com-
plicated mechanism of the internal photoeffeot. An important conclusion
reached here is thatthe investigation of the temperature course of the
photocurrent can serve as a simple method of determining the position of
the adhesion levels in amorphous photoconductive layers. V.K. Kocherov,
graduate student of LOU participated in the work. A*F. Ioffe in men-
tioned (Refo 10). There are 2 figures and 10 references: 4 Soviet.
ASSOCIATION: Leningradskiy fiziko-tekhnicheskiy institut AN SSSR
. (Leningrad Institute of Physics and Technology AS USSR)
SUBMITTED; August 31,, 1959 /C
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8/181/60/002/01/31/035
B008/tO14
AUTHORS: Kolomiyets, B. T., Lin' Tszyunl-tin
TITLEt Spectral Distribution of the Intrinsic Photoeffect in the
ZnSe-CdSe System
PERIODICAL: Pizika,tverdogo tela, 1960, Vol. 2# No. 1, pp. 169-170
TEXT: For the purpose of studying the spectral sensitivity during the
transition from one structure to the other the authors synthesized eight
compounds with the following componentsz ZnSe, 4ZnSe -CdSe, 2ZnSe. CdSe,
ZnSe. CdSe, ZnSe. 2CdSe, ZnSe -3CdSej ZnSe -4CdSe, and CdSe. The synthesis
was carried out in evacuated quartz ampoules above the melting point. In
addition to the lattice parameters published by N. A. Goryunova, V. A.
Frank-Kamenotokiy, and N. N. Fedorova (Ref. 1), the authors performed an
X-ray structural analysis of the substances synthesized. The results
given in Table I are in close agreement with Ref. 1. Further, the Table
shows that the interface between two systems of solid solutions is found
at a CdSe content of more than 50%. Spectral curves of all compounds are
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Speotral Distribution of the Intrinsic B/181/60/002/01/31/035
Photoeffect in the ZnSe-CdSe System BOOB/ 1DO14
reproduced in Fig~ 1. It may be seen that the spectral sensitivity is
gradually shifted with a change in composition. Per the purpose of
determining the width of the forbidden zone, the authors calculated the
activation energy from It max /2. The final results are represented in
Fig. 2, which shows that the activation energy in the system under eon-
sideration changes continuously. Though no distinct change in the activa-
tion energy of the carriers was observed durin6 the transition from one
structure to the other, this transition manifests itself in the varying
shape of the spectral curve within the short-wave region. Pig. 1 shows
that all spectral characteristics may be divided into two groups acocrd-
ing to their shape, and that the interface is distinctly marked during
the transition from the structure of sphalerite to that of wurtzite. The
authors thank I. N. Ageyeva and R. V. Struchalina for having carried out
the X-ray structural analysis. There are 2 figures, 1 -table, and 2 refer-
encess 1 Soviet and 1 German.
lk
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Spectral Distribution of the Intrinsic S/181/60/002/01/31/035
Photoeffect in the ZnSe-CdSe System B008/BO14
ASSOCIATION: Leningradskiy fiziko-tekhnicheskiy institut AN SSSR
(Leningrad Institute of Physics and Technology, AS USSR)
SUBMITTED: July 24, 1953
~/c
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"1272
S/181/60/002/01/33/035
BOOB/BO14
??oo
AUTHORSt Kolomiyetsp B. T.t Hazaroval T. F.
TITLEs The Part Played by Impurities in the Conductivity of
Vitreous As.SeTe.
PERIODICALs Fizika tverdogo tela, 1960# Vol. 2, No.1p pp. 174-176
TEXT: The authors studied the part played by impurities in vitreous and
crystalline substances of the same composition. They chose
I
4
As Be 2As Te (As _eTe ) for this purpose. When the malt of this sub-
2 3 2 3 2 2
stance is slowly cooled it crystallizes, and it becomes vitreous when it
is suddenly cooled. This substance was produced from high-purity elements,
and was additionally purified by zonal recrystallization. A table lists
the mean values of the conductivity of glasses and crystalline As.SeTe.
immediately after.synthesis and zonal recrystallization. It may be seen
that after zonal fusion has been carried out the conductivity of the
crystalline substance is lowered by three orders of magnitude and passes
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The Part Played by Impurities in the 3/181-/60/002/01/33/035
Conductivity of Vitreous As2SeTe2 BOO8[BO14
from the p-type to the n-type. The electrical properties of vitreous
As2SeTe2, however, remain unchanged. The conductivity of the crystalline
material has a different temperature dependence before and after zonal
fusion. The activation energy of the impurity centers, determined from
temperature characteristics, amounts to 0.4 ev. The temperature depend-
ence of the conductivity of vitreous material is not influenced by the
degree of purity. It is characterized by the activation energy of the
1.0-ev carriers. The temperature characteristics of crystalline and
vitreous As2SeTe2 are shown in the figure. There are 1 figure, 1 table,
and 4 Soviet references.
ASSOCIATION: Leningradskiy fiziko-tekhnicheskiy institut AN SSSR
(Leningrad Institute of Physics and Technology, AS USSR)
SUBMITTED: August 1959
Pard 2/2

81774
5-14110
S118116010021021161033
Boo6/W67
AUTHORSs Goryunoval N..A.t Kolomiyetsf B, T., Shilo, V. P.
TITLEt Vitro-oxwSemiconductorsP9. Titrifioation in Complex
Chalcogenides.on the Basin of Arsenic Sulfide and Selenide
PERIODICAL: Pizika tverdogo tela:,' 1960* Vol. 2, No. 2, pp. 280-283
TEXTt In investigating binary chalcogenides on the basis of sulfur and
selenium it was observed that the elements of the 5th group - phosphorus
and arsenic in this case - which have no vitrifying properties when
alloyed with selenium and sulfur, easily form glass in a wide concentra-
tion range with essential deviations from the stoichiometric ratio.
Also alloys of phosphorus and arsenic chalcogenides with chaloogenides
of other elements of this group (antimony, bismuth) form glass.15
Chalcogenides of any other element proved to have no vitrifying proper-
ties under the experimental conditions of the authors, neither alone nor
in alloys. The only exception is gormanium.The chalcogenides of the
elements of the 5th group are called vitrifying and those of the Ist - 4th
group (with the exception of Go) non-vitrifying. Vitreous substances were
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81774
Vitreous Semiconductors. 9. Vitrification in B/181/60/002/02/16/033
Complex Chalcogenides on the Basis of Arsenic Boo6/W67
Sulfide and Selenids
also obtained by fusing 6halcogenides of the elements of the 5th group
with chaloogenides of the elements of other groups. Furthermore, the
authors investigated the influence exercised in such melts by non-
vitrifying chalcogenides on the vitrifying capability of the melt of the
two,(interaoting) ohalcogenides. Melts on the basis of arsenic sulfide
and selenide were produced with the sulfides and selenides of the
elements of the 1st - 4th group (except for B, Al, C, and SO. The
syntheses were made in the concentration ranges of -5 mole% of the
ternary systems Me - X - As, where Me is an element of the first four
groups, A' - sulfur or selenium. The vitrification of the systems As So
Me is illustrated by phase diagrams for the elements of the groups I IV
in Figs. 1-4. The sulfides yielded similar results. Figs- 5 and 6 show
the experimental results in the form of diagrams which illustrate the
ratio between the vitrification ranges of all elements from Cu to Pb.
In conclusion, the results are briefly discussed and compared with those
of Zachariasen and Winter-Klein. There are 7 figures and 4 referencest
3 Soviet and I American.
X
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S/isi /41L 041(012/03/02/028
,:~2 0 Boo6/Bo17
AUT HORS Ivanov-Omakiy, V. I Kolomiyets, B. T.
TITLE: Electrical Propertieskof the Equimolecular Alloy InSb-GaSb
PERIODICAL: Piziks, tverdogo telay 1960, Vol. 2, No. 3t pp. 388-394
TEXT: The investigations described in the present paper were conducted
with coarsely crystalline n-type and p-type samples produced by zonal
leveling at low velocities. The n-type samples had a carrier concentration
of Q-5 - 3)-io'5 cm-3 and the p-type one of (7 8).1016 om-3. The
samples had the shape of parallelepipedona (12 3.5 - 1.5 mm3). The
temperature dependence of their conductivity (6) and Hall coefficient (R)
was measured (Fig. 1) by 0. V. Yemellyanenko's method. In the range of
natural conductivitzv~ the curves for n-type and p-type samples run
parallel. The ratio between electron and hole mobility was determined
from the temperature dependence of the Hall effectp and was found to be
u-
b - - 20. Fig. 2 shOWB the results of a joint measurement of the
U+
Caxd 1/3

Electrical Properties of the
Equimolecular Allay InSb-GaSb
81348
S/181/60/002/03/02/928
B006fBO17
temperature dependence of a, R, thermo-emf (a) and of the coefficients of
the longitudinal (0) and transverse (qI-) Nernst-Ettingshausen effect in
an n-type sample with an electron concentration of 2.1ol5cm-3. The results
of the investigations were analyzed according to the individual fields.
The position of the Fermi surface was directly determined from measurements
of the thermo-emf, without taking into account the contribution of the
holes which is estimated to be 5~. Fig. 3 shows the temperature
dependence of the reduced Fermi level. A large number of data are given
for the carrier mobility. The Hall mobility of the electrons changes with
temperature according to the law u. M UOT-1.20 in the case of electron-
phonon scattering u ^,T-1*5 according to th3ory. For InSb u - T-1*7 was
found experimentally. The simultaneous measurement of Q11 and q-L at low
temperatures yields a value of 1-5 for the exponent. The electron mobility
measured was 35,000 cm2/v.sec at room temperature; hence, u = 0-65-u.
- 0-65-35*000 m 30,000 CM2 /V-sec. The hole mobility at the same
temperature is found at = 600 OM2/v.sec. The width of the forbidden zone
E and its temperature dependence d AE/dT were determined for three
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Vr

8148
Elictrical Properties of the S/181/60 002/03/02/026
Equimolecular Alloy InSb-GaSb BOo6/BO17
samples from the Hall effect as being 0-42t0.02 ev (OOK), and
-(4-OtO-5)-jo-4ev/deg, respectively, according to m6asurements of optical
absorption at 300-and 770K. At room temperature, the width is O-33tO-O1 ev.
The effective carrier mass was determined by measuring the thermo-emf and
the Hall effect: electron mass (0-04 t O-Oi)mo, hole mass:
(0.25 � 0-5)-mo- In a Table# the results are compared with those obtained
for pure InSb and GaSb. In concluaiong the authors thank L. V. Kradinova
for the production of the initial materials, and 0. V. Yemellyanenko for
his assistance in the measurements. There are 5 figures, 1-table,-and 10
references: 4 Soviet" 2 US, 2 British, 1 Canadian, and 1 German.
ASSOCIATION: Fiziko-tekhnicheskiy institut Ali SSSR Leningrad (Institute
of Physics and Technology of the AS USSR, Leningrad3
SUBMITTED: June 179 1959
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81349
?6 00
AUTHORS:
TITLE:
PERIODICAL;
S/181/60/002/03/03/028
Boo6/Bo17
Kolomiyets, B. T , Nazarova, To F.
__-m ------- lov-1i
II. Hall Effeepin Vitreous Materials of the System
Fizika tverdogo tela, 1960, Vol. 2, No. 3, PP. 395-396
TEXT: In this papert the authors present the first results obtained from
investigations of the Hall effect in amorphous semioonductors. Because of
their high electrical conductivity materials of the system
T12Se.AB2(Se,To)3 were chosen. It was between 1o-3 to 10-9ohm-lcm-l,
depending on the Te content. The measurements were made by means of an
W HX-1 (INKh-1) instrument resembling a Hall voltmeter; the Hall effect
was measured by the well-known method in variable electric and magnetic
fields. This instrument permitted measurements in the resistivity range
'10-1 io-5ohm-lcm-l. The Hall voltage was measured in the range
0.2 - 3,000 gv, the maximum magnetic field strength-attained 1,800 oe.
The samples were parallelepipedons of 12 - 4 - 1.5 mm. Fig. 1 illustrates
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81349
Ii. Hall Effect in Vitreous Materials of the S/181/60/002/03/03/028
System T12Se.As2(Se,Te)3 Boo6/BO17
the final results of the measurements; it was found that with increasing
tellurium concentration the carrier concentration increases monotonically
(from 5-1011 to 6*jo17 am-3),ands accordinglyt conductivity as well. The
data refer to room temperature. Fig. 2 shows the dependence of mobility on
the composition. If the sign of the carrier is determined from the sign of
the thermo-emf, result differs from the determination of the carrier sign
from that of the Hall effect: in the former case, p-type, and n-type in the
latter. It may be concluded from the results that the change in conductivi-
ty with the composition of vitreous semiconductors of the system investi-
gated, which is brought about by the change in concentration and mobility
of the carrier, is very low. Similar conditions are expected for other
vitreous semiconductors. V. Ogorodnikovg graduate student of LGU (Leningrad
State University), assisted in the work. There are 2 figures and 4 Soviet
references.
ASSOCIATION: Fiziko-tekhnicheskiy institut AN SSSR Leningrad (Institute
of Ph-voice and Technologt of the AS U5SR, Leningrad)
SUBMITTED: 'August 1, 1959
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6(1
3~ M/04/14/034
01 3
BONY,, 0
AUT RS: Kolomiyets' B. T*9 Pavlov, B. V.
TITLE: Vitreous Somioonductorst VIII. The Optical Properties of
tmo Arsenous,. and Antimonious Chalcogenide Glasses je,
PERIODICAL: Fizika tvardogo tela, 1960, Vol. 2, Noi 4, pp 637-643
TEXT: The systems (T1 - As- 3b) - (3 - So - Te) form semiconduotive glasses
in a wide range (Fig. 1). These glasses can be penetrated by infrared light
up to about 60 to 80%* In this paper# absorption spectra of 35 binary and
two quaternary glasses are studied between -1 and 18 g. The samples were
prepared by fusion or pressing. Absorption depends, to some extent, on the
mode of preparation method, as was shown by tests performed Vith An 2Q 3
(Figs 2). The following systems were studied (some of the absorption
curves are depicted): As 2 33 - As~SeY five compounds (Fig- 3); As 2 Be 3 -
- As 2ToV ton compdunds (Fig. 4); As 2Be 3 - Tl2Be, two compounds (Figs, 4)1
As2 Se 3 -8b 2Be 3' three compounds (Fig- 4); A82S3 - A82 Te3' two compounds
(Fig. 6)1 As 2 s3 Tl2S, two compounds (Fig. 6); As 233 - Bb2S3$ two compounds
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81955
-'Vitreous Semiconductors. VIII. The Optical S/181/60/002/04/14/034
Properties of Thallium, Arsenouso and Anti- B002/BO63
monious Chalcogenide Glasses
(Fig. 6), and moreover, the two compounds As 2Se 3* Tl2Se.3Tl 2Te-3As2Te3and
T12(Teo 013600)4"2 T03 (Fig- 4), as well as seven eamplea of A0239,.AG2 Te,
with varying tellurium contents (Fig. 7). The absorption limits of these
glasses are 610 and 3,500 mg (Table). The content of A923 3 and As 2Be3 is
essential for the optical properties. As 283 glisses are characterized by
the decrease of their absorption bands at 4.2 and 6.5.1t; As 236 3 glasses
frequently show the oharacteristio absorption band at 12.5 g. The authors
thank V. _P.Shilo for his assistance in the synthesis of.the materials.
There are 7 figures, 1 table, and 7 references: 4 Soviet and 3 American.
ASSOCIATION: Fiziko-tekhnichaskiy institut AN SSSR# Leningrad
(Physicoteohnical Institute of the AS USSR, Leningrad)
SUBMITTED: March 24, 1959
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.20619
24-1-700 s/o63 60/005/005/008/021
11 Lf 5, 114 7- A051 A029
*.I DOD 1153,1 YA
AUTHORe Kolomiyets, B*T*t Professor
Z__~
TITLEs Glass-Like Semiconductors
PERIODICAL: Zhurnal Vaesoyuznogo Khimioheskogo Obehahestva im D.I. Mends-
leyeva, 1960, No*' 5, Vol. 5, 9P. 553-557
TEXT3 Experimental wo:ck is carried out by Soviet scientists in the field of
the glass-like state in alloys of ohaloogenides of arsenic, antimony and
thallium, for example (Fig.1). The alloys of arsenic and phosphorue aelenid
es yield glass in the entire range of concentration, in sulfides - up to 50%
phosphorus sulfide. Further studies were made on the interaction of arsenic
sulfide and selenidet which were regarded as glass-forming agents, with the V
corresponding sulfides and selenides of certain metals of the I, II, III and
IV groups of the periodic table (Ref.15). Fig.2 shows one of the concentra-
tion triangles with respect to the arsenic-celenium-elements of the IV group
system. Fig-3 and 4.give the experimental results in diagrammatic form re-
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20619
Glass-Like Semiconductors S/063/60/005/005/008/021
A051/A025
flecting the relationship of the.glase-like state region and that of the in-
vestigated systems'obtained by the above-mentioned author. These results
indicated that a straight correlation between the region of vitrification
and the position of the metal element in the periodic system could not be ob
served. Other*authors, such as Zakhariyazen and Winter-Klein attempted to
interprete the obtained results from the point of view of the criteria sug-
gested for complex alloys based on oxides, but without success. A study of
the chemical bond role in the vitrification laws carried out on the basis of
available literature data and eXperim6ntally were partially described in th 'e
works of Refs.14, 15 and lead'to the conclusion that the necessary condition
for Vitrification is the presence of a covalent bond in substances, both in
the solid stateyas well as in the melted one. The author thinks that, based
on the investigation of the structure of the chalcogenide glass in the sys-
tems arsenio-sulfur-selenium-tellurium by the method of X-ray-structural
analysis (Ref.17), the low-temperature thermal capacity (Ref.18) and the
measurements of viscosity, it can be assumed that these materials have a lam-
inated chain-like.structiite with a covalent chemical bond within the chains
and Van der Waalef forebs betw66n the chains. The glass-like state is main-
tained also in significant destructions of the "stoichiometric" composition
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2o6ig
Glass-Like Semiconductors S/063J60/005/005/008/021
A051/AO29
in any of the chalcogenide glasses (Ref.13): Several values of the conduct-
ivity are listed in the table for eertain glasses of the systems depicted in
Fig.l. It was established that the spectral distribution of their internal
photoeffect can change widely with a ohange in the composition. The tempe-
rature relationship of conductivity of all materials follows the ordinary
exponential law. Measurements of-the thermo-emf showed the presence of high
values of the theroo-emf. The carrier sign in this case,corresponded to the
hole type of conductivity. It was also noted that the conductivity of the
investigated glass-like semiconductors had a purely electronic nature. An
assumption is,m4de, based on'the facts stated that with respect to the,
electrical properties there is no difference betwien orystalline~and glass-
like substances, and'.the presence of glass with semiconductive properties
confirms,the statement made by4cademician Ioffe on'the aetermining role
played by the close-order in electrical properties of substances. The com-
plex investigation of glass-like semiconductors, particularly in the system
As Se 3-As2Te , showed that with a change in the compos4tion the conductivity
YaKe also c9ang9b within a wide range (Fig,9), as well as the softening
temperature (Fig.10), the density (Fig.11) and the optic absorption (Wi-20).
The conclusion is drawn that glass-like semiconductors*cpmbine the*properties
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Glaos-Like Semiconductors S/063/60/005/005/008/021
A051/A029
of both semiconductors and glass. Experiments have shown that glass, the
composition of which lies far from the vitrification boandary, is quite
stable to acids and alkalies and under normal conditions does not devitrify
for a number of years. Glass-like semiconductors differ from crystalline
ones in their electrical properties only by the apparent effect of small
foreign admixtures and destruction of the stoichiometric composition and by
the slight mobility of the charge carriers (Ref.22,23). Chalcogenide glass-
es crystallize easily when heated to the softening temperature, whereby the
electrical properties can undergo significant changes. A study of the tempe-
rature range to 300 andmore degrees above the softening point showed that
any changes in the.law "equence which could indicate a change in the close-
order were absent (Vig, 7). A study of the spectral distribution of the in-
ternal photoeffect confirmed the same fact. The author thinks that. in the
light of these facts one cannot expect a great change in the conductivity
with a shift to the orys.alline state to be determined by a change in the
close-order, since the crystallization usually takes place below the soften-
ing temperature. One of the reasons for the enormous increase of the con-
duotivity is given as being the different role played by the admixtures in
the.glass-like and crystalline states of the substance. This assumption was
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20619,
Glass-Like Semiconductors S/063/60/005/005/008/021
A051/AO29
confirmed experimentally. The experiment showed that as a result of the
purification the conductivity in the crystalline state decreased by three
orders and the hole conductivity was replaced by an electronic one. The au-
thor mentions various articles dedicated to the theory of liquids and amor-
phous bodies (Ref.26-28). The photoelectric properties of these materials
are used and they are also used for hermetically sealing of radio parts
(Ref.33). Special interest is shown in the low softening temperatures of
this group of materials in this connection. The group of material described
in this article has attracted special attention due to their transparency in
the infrared' region of the spectrum. There are numerous patents for infra-
red glass. Af the present time, it has been established that in glass of the
V20-PJ05-IAeO system the conductivity can reach the high value of lo-5ohm-l-
. CM. . The fields of vitrification for the indicated system have been stud-
ied for the majority of oxides of the elements of the periodic system, as
well as the relationship of the electrical properties to the composition
(Ref.36). The author points out that the oxide and chalcogenide zemicon-
ductors form a wide range of materials. their high electronic conductivity
permits one to nonduct a more complex investigation which, in turn, can lead
to a better understanding of the nature of the glass-like state. The ease
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20619
Glass-Like Semiconductors S/063/60/005/005/008/021
A051/AO29
of crystallization of the chaldogenide glass renders it a valuable material
for the study of the mechanism and kinetics of crystallization. There are
11 figurer) I table, and 40 references: 27 Soviet, 9.English, 1 French,
3 German.
r 'Te TL,S T,Se TI Te Figure 1:
Region of vitrification in alloys
of thallium, arsenic, antimony,
chaloogenides (internal polygon_-
conditions of gradual cooling,
Asjej AS, AsjTej:!
i external olygon conditions of
hardening3.
sh.T.. 35153 3b
Card.6/12
'L I'M

23137
s/1ai/6i,1)O3/OO5/O42/O42
Bill/B202
AUTHORS: Ivanov-Omskiyp V. I.g Kiseleva, N. K., and Kolomiyets, B. T.
TITLE: Production of twin crystals of indium and gallium antimonides
PERIODICAL: Fizika tverdogo tela, V- 31 no- 5P 1961, 1621-1622
TEXT: The authors attempt to produce specimens with abruptly variable
parameters by growing crystal twine from two semiconductors on the basis
of intergrowth. The authors suspect that this intergrowth is a sufficient
condition for the isomorphism of the mentioned compound. The twin crystals
we-.* prepared in the following way: The higher malting part of the twin
cry/ital (gallium antimonide) is out out from one piecel the indium antimo-
nide is pulled from the melt and grows to the gallium antimonide, To study
the structure, the authors cut out specimens perpendicular to the line of
separation of the two components. The surface of the out was microscopically
analyzed. The separation line between In'and Ga antimonidea as well as the
crystal structure on both sides of the line of separation could be distinct-
1Y disrprned. It was observed that in polycrystalline seeding each nucleus
of theG.a antimonide forms a nucleus in the In antimonide. As could be seen
CsCrd 1/2

23137
S/181/61/003/005/042/042
Production of B 111/B202
on the pictures of the cut the seeds of gallium antimonide consisted of
some twin crystals (polysynthetic Ga antimonides). The In-ant imoni de grows
to the Ga-antimonide,in such a way that the'direction of the twin plime
and the number of twin crystals which is given by the seeding of gallium
antimonide are conserved. There are 2 figures and two references: 1 Soviet-
bloc ana 1 non-Soviet-bloc .
ASSOCIATION: Fiziko-tekhnicheskiy institut imeni A. F. Ioffe AN SSSR
Leningrad (Institute of Physical Technology imeni A. F. loffe
AS USSR Leningrad)
SUBMITTED: January 2, 1961
Card 2/2

_777-
S/181/61/003/011/054/056
71 B109/B102
Al/i Od Y3j 1/3
AUTHORSt Ivanov-Omskiyj Vo 1.9 anq,,Eolomlyels, B. T.
TITLEv Thermomagnetic effects in n-type gallium antimonide and its
alloys.with indium antimonide
PERIODICALt Fizika tverdogo tela, v. 3$' no. ill 1961) 3553-3555
TEXTt -The longitudinal and transverse Nernst-Ettinghausen effects (N.-t.-
C)
effects) were measured in the temperature interval from 100 to 500 K in
,n-type gallium anbimonide at H - 104 oersteds by means of an apparatus
described by 0, V. Yemellyanenko and.N. V.. Trishin (PTE, No. 19 98, 19610).
The results are shown in Fig. I and Fig. 2. Theoretically, they can be
explained by. the Sagar model,(A. Sagar Phys. Rev., li7t 93, 1960).
According to Sagar, the conduction band has two minima whiohi at room
temperature, are separated by. an energy gap of 0.08 ev. It can be
demonstrated that therefore the solution of the kinetic equation has the
form

30606, S/181/61/003/011/054/056
Thermomagnetic effects in n-type... B109/BI02
(A)
u
a. b
In -4
(n
for the transverse N.-E. effect in a weak magnetic field. u and u
1 2
denote the oarrier~mobility in tl~ a- first and second band, N and N are
1 2
the carrier concentrations, AE is the energy gap between the bands. .The
second term in the braces is independent,of the diaperaion mechanism band
always.positive for 01'. Studies made with the Sagar parameters showed
that at relatively low temperatures this term is of great importance an&
determines the sign of the N.-E. effect. Since with 04~6 GaSb - 6A InSb
the sign of the N.-E. effect obtained by the experimental measurements
'was positive, the band structures of GaSB and its alloys vith InSb. are
Card 2//

08 Ob
S11
Thermomagnet.--c affects in n-type
bound to be analc~goua. . With 90% GaSb - 10% InSb T_-~..e 11s9 howev*ry
considerably weaker. . This is -jxplained by t1lie t'a.;, wish jLncreasing
InSb portion the gap between tne bando (000) and Hence
the cont-r~lbution of the electrons from the aeccnd ~-arai o the N.-E. effect
becomes a smaller. For 50% GaSb - 50% InSb the N.-E, has a
negative iign in P. wide temperature range whi-.h ij exV..a~.-.-jd by the
negligibly small contribution of the electruns from 1.-hij band. In
gene r a 'A. it holds that the d1stanee between the min!ma is :~ndu-ced with
4r.3reasing GaIn p.;rtion. Hence, the sign of the N.-E. qffe,- in GaSb and
it.8 alloys with small additions of In9b i4s independezil.-. of I..ha electron
dispersion me-chanism. The authors thank degree st-ide:ill (-,f 1PrU G. N.
Popovifcih for calculations. There are 2 figures and
1 Soviet and 2 non-Soviet. The two references t,~
an guage
pub'Lir.ations read as followat A. Sagar. Phys. Ro%v, 1,~ 1,- 95, !960; R. W.
Keyes, M. Pollak., Phys. Rev.9 118, 100,;, 11,60.
ASSOCIATION: Fiziko-tekhnicheskiy institut im. A~ F. T.cffe AN SSSR
Leningrad (Physi~,ot*enhnieal Institute lmeni A. F, Ioffe AS
USSR Leningrad)
Card 3/y

3C806
S/ 18 1/6 - /00 5/0"1054/056
Thermomagnetle effects in n-type ... B109/BZ02
SUBMITTED: August 10, 196 4
Pig. 1. Temperature dependence of the coefficient
N.-E. effect, (QL). Legenda (1) GaSb; (2) 6% InSb
InSb - 90% GaSb; (4) 5A InSb - 50% GaSb.
Fig. 2. Temperature dependence of the coeffiuierv~
N.-E. effect (Q Legendi as izi Fig.
GaSb.
C-f -.1-an3verse
.- 9',itA QaSb, 0" 10A
y x
771 tht, !,-,.ngitudinal
1; (5*1 --,Cj% InSb 50%
Card 411K

KOLOOM TS,, Boris T., prof*, d-re
Photoresistance in the automation and industz7. Tekhnika 10 no.9:1-6
161.
(Automation) (Photoolectricity)

TAUTS, Ya.(Tauc, Jan], prof.; MIKHAYLOVA, M.P.[translator];
KOL014IYETSY B,T.p red.; TELESNIN, N.L., red.; REZOUKHOVA,
[Photoelectric and thermoelectric effect in semiconductors]
Foto- i termoelektricheskie iavlenlia v poluprovodnikakh.
Pod red. B.T.Kolomiitsa. Moskva, Izd-vo inostr. lit-ry,
1962. 250 p. (MIRA 16:5)
(Semiconductors)

h4305
S/058/W00Q/0W043/048,
A062/A101
AUTHORS: Kolomiyets, Boris T., K11nev, Stefan
TITIE: Photoresiitors in automation and industry
PMUODICAL: Reicrativnyy zhurnal, Fizika, no. 12, 1962, 26, abstract 12-3-521
("Fiz.-matem spisaniyell, 1961, It, no. 4i 250 - 263, Bulgarian)
TEXT. Survey of general properties of photoresistors and their typical
characteristics and practical applications. At present the industry already
produces photoresistors to obtain.sufficiently high currents up -:o 10 mA and
more. These photoresistors are prepared from monocrystalline and,pressed cad-
mium sulfide. Also laboratory samples are o~teined having a linear dependence
between the photocurrent and the illumination.. Thd time constant of the exist-
ing types is of the order of jo-3 - jo-5 see; the least inert are photoresistors
made from lead sulfide which can be used for audio frequencies up to 10 kilohertz..
Applications are considered for photorelays, automatic sorters, blocking devices,.
etc. The application of photoresistors in the polygraphic industry is described,
in more detail.
[Abstracter's note: Complete translation] N. S.
Card 1/1

.41385
S/105/62/000/010/002/002
E192/E382
-7.
al 'Sc -ices,
AUMORS: Y'010,11iyets, B.T., Doctor of Technic, i ei - .
Professor and Olesk, A-0., Candidate of Technical
Sci one G.3 (Leningrad)
TITLE: Cadmiui-ii-solenide photorosistor~, type (FS-D)
PERIODICAL: Elektrichestvo,*no. 10, 19621 71 - 75
TEXT: The principal cliaract'eristies and paraizzieters of
cadmiuj;i-selenide photoresistors :-.ianufactured in the Soviet
Union are described. Tvro types of resistor.are currently
made, both based on the same photosensit-ive element. This is
inado of polycrystall:Lrxe cadmIum selenide~ in thd form of a
disc, 8 mm in'diameter And 0.5 '- 0-8 -mm thick- One of the
surfaces of the disc is provided with two graphite electrodes
deposited It inm apart so that the working surface is
2
7.5 x 4 mm. The elentents have a maximum spectral sensitivity
at the, boundary between the visible and the infrared spectral
regions (at about 0-7 10. The current of the photoresistors
.,is proportional to the square root of illumination .1
pd
Card 1/2

S/105/6-2/000/010/00-2/002
Cadmiwii-s al enido .... r,,l92/r,-3822
ux
satu.'~-ation does not occur even at 1 600 A. on the other hand,
Aor a given illumination the current is proportional to the
voltage applied to the alenlent. Tile sensitivity of tile devices
is very high and reaches 3.5 000 JIA/luxV. Thus, for an illui-An-
ation of 200 lux and an applied voltage of 50 V, tile photo-
current is several mA. The lo-vest value of the dark. resistance
6
is 5 x 10 ohm but, in most cases, ii is much higheri The
noise level is 10-9D ILV/V, the photocurrent and thus the sensiti-
vity of the device decrease with increasing tcmpcr~turc, while
the dark current increases as a function of temperature. The
rise and d'ecay times of the resistors, when operated with
pulses, are of the order of 1 - 3 msec. Tile resistors are
to some c:ftent unstable during the first 200 - 300 hours of
operation; their sensitivity decreases by about. 301,~' during this
period; afterwards, it is vary stable. If the.devicas are to
be operated under conditions of high humidity or in liquid media,
they should be irWrtod in suitably hermetically-scaled capsules.
There arc 8 figures and 1 table.
SUBMITTED: No%rember 18, 1961
Card 2/2
----------

333q3 /62/11"'
ons
/0 ana mass in
L?, 7 ejec-tTo
ov'~ jve
all 10A.1ity an antimoniaes 1962, Oi
ISO 1, A ,I
and 69' "j.XIS 'VI. 49 no- )~,&,ra,teTts
telaq j.-ty are cy-ango We-re
t.qe Y-, M bi 'S'0 lusio's an
.ra0go 9 0 1 st'aal tj-Le . ,*ea
5 an toa 111SIO-G& rasl,, 11 e%oe,l
chosen T11
'We-re as. + 64. G B-b ay,
elf ectj-qe te-rS 0 TII'S'D 94 5. e d bp~-
low tliese V, 'f 06 %e of s"Ic 'a 00 j.0 In5b + t~ons I 5r 11 etaf
since t'jons CLIta 08 96U A en~~r&
Cone
Is e'r
,O%poul~!~j& solu T116 y~e):%
SO jejelling' 6-A ca u-ritj an& , - V's en
t-,Te ill tioll 01 'he VMIP elf ec tjqe n
st-r,ac ,One 11 '5 ~ T 5.11 ef f er, ost X. . n
0OM '.1-441ty It. n,
0,,,,Ice doJOT con 0, IA oonaac electron inea a. i -r0
ccess ration 3 V-roui Ob4 - ates
,litl eLNy,,
e1 ,I e e a,., e
coucent 16olu- - set-foll in .1tion. it deet e
't-rons e.-r
&OTLOT 4 andL A 0 06D& e I oz -POs
t,weell AO bole nee 0' f oT ele f-rom -11n
ents ,Peud6e 'ho'i e Sno 9,T
,aeaS"Telt a in & JOT is
aete.r,mine osition ,-rqe
I coml) TY0.
ent 0 tent -
G ast 0
GaTaL
33373
5/16 62/004/00,/05',/05--'
B-I 12YB1 38
Carrier mobility and effective- imperfections playa a minor role in tliese
a -hermo-emf measuremeL~S
lectron scattering from lattice 11
solutions~ The effective mass was,calculated from t E190trozi concentration
ttering from acoustic Phonons~
assuming elactron sea S,.~lts were obil-aiyrle'~'~
was determined from the Hall effect- The following re
InSb t Ga9b TOK n, cm-,~ m"In /M0
in m014- 16
100 0 5115 2~9-10 0.052
-1 .01;-10 16 0.035
80 20 303
50 50 277 1J'1015 0.037
32 68 3o6 6.1-1015 0.044
10 90 310 7.2-10 .17 m641
0 100 3o-6 6.2-10 the higher ooncen`,-~-a-
The sudden increase in effective mass is attributed to - FTom ths
tte ing frOm ionized impurItAP-s-,
tion of electrons and their sea Y r L-,15en
positive sign of both the transverse and longituiinal Nernst-Ettlngsr'A
Card 2/3

33373
S/181/62/004/001/05-1/052
Carrier mobility and effective ... B112/B138
effects it can be seen that scattering from thermal lattice vibrations plaY5
the main role in solutions with high GaSb content. The results indicate
that in InSb-GaSb the scattering mechanism has several components, of which
that from acoustic phonons is only one. There are 3 figures, 1 tablegand
4 references: 3 Soviet and I non-Soviet. The reference to the English-
language publication reads as follows: A.Sagar. Phys. Rev, ItI, 93; 1960~
ASSOCIATION: Fiziko-tekhnicheskiy in8titut im. A. P. loffe AN SSSR
Leningrad (Physicotechnical Institute imeni A* F. Ioffe AS
USSR, Leningrad)
SUBMITTED:
Card 3/3
September 1, 1960 (initially)q February 11, 1961 (after
revision)

34229
S/181/62/004/002//012/051
7 goo (/,p 3S-1 /0 ,f3', P? CS-) B102/B138
AUTHORS: Ivanov-Omskiy, V. I., Kolomiyet and Chou-Huang
TITLE: Mobility and effective mass of holes in gallium antimonide
PERIODICAL: Fizika tverdogo tela, V. 4, no. 2, 1962, 383 - 387
TEXT: Hole mobility and effective mass were determined for 43 mona-
crystalline GaSb specimens (12-3-1.5 mm3) from measurements of mobilityg
Hall effect and thermo-emf. The hole concentration of the specimens
varied between 1.4-1017 and 2.7-10 19 cm-3. Knowing the position of the
Fermi level from the thermo-emf, and the carrier concentration from Hall
m
effect, the carrier mass can be calculated from the relation -2
(il/3 h2 2/3 ( m0
4 xrdx ~nm0kT 1 ;;TI,7) . ~ = VkT~, Permi level, Fr (~)
e -1 + r is the exponent in the energy dependence of the electron
Card 1/3

34229
S/181/62/004/002/012/051
Mobility and effective mass ... B102/B138
mean free path, For effective mass calculation the scattering mechanism
has to be known. Calculations were made for the limiting cases r = 0 and
r = 2. The m P/M0 values obtained are between 0.66 and 0.98 for r - 0
and 0.17 - 0.31 for r = 2. The calculated figures only agree with the true
values if one scattering mechanism prevails. Effective mass increases
with the hole concentration; the same holds for electrons. The
concentration deDendence of hole mobility is explained by assuming different
contributions from two scattering mechanisms: thermal lattice vibrations
and impurity ions. Estimates of hole mobility for scattering from
acoustic vibrations yield 1000 cm2/v.see, and from polar vibrations
2300 cm2/v*sec. Good agreement with experimental data is obtained for
41 = 0000 CM2/v.sec and mp = 0-35 mo . From measurements of the Hall
mobilityq'mp = (0-35 t 0.04)mo was found. For holes scattered from
lattice vibrations only, Hall mobility was (1200 :t 100)cm2/v-sec. The
fact that thermo-emf and mobility measurements yield similar effective
mass values indicates isotropy of the isoenergetic surfaces in the G-aSb
valence band., There are 3 figures, 1 table, and 14 referenoes: 5 Sovief,
Card 2/3

34229
3/181/62/004/002/012/051
Mobility and effective mass ... B102/B138
and 11 non-Soviet. The four most recent references to English-language
publications read as follows: D. Bolet, M. Menes. J. Appl. Phys., 31~
1426, 1960; C. Hilsum. Proc. Phys. Soo., 76, 414, 1960; L. F. Weisberg,
J. B. filanck. Bull. Am. Phys. Soo. 5, 62, 1960; T. S. Moss. Optical
properties of Semiconductors. London, 1959.
ASSOCIATION: Piziko-tekhnioheskiy institut im. A. F. Ioffe AN SSSR
Leningrad (Physicotechnical Institute imeni A,, F. Ioffe
AS USSR, Leningrad)
SUBMITTED: August 10, 1961
Card 3/3

34233
S11611621004100210161051
B102/B138
AUTHORS: Kolomiyets, B. T., and Lyubin, V. M.
TITLE: Electrical and photoelectrical properties of antimony
selenide layers
PERIODICAL: Fizika tverdogo tela, V. 4, no. 2, 1962, 401-406
TEXT: As 2Se 3layers 0.4 - 34 thick and of 99.998 and 99.99% pvrity were
studied. They are of great interest for television-tube manu-* 1, ~,.
Ag, Al, Au, Pt and SnO were used as lectrode materials. Conductivity,
photoconductivity, liiRt absorption aned polarization ei'fecta were'~studied
with the usual methods and by the electron contact. Electron diffraction
pictures taken by V. A. Dorin showed that the As Se layers obtained by
2 3
condensation in vacuo were amorphous. Hole-type conductivity was
predominant. Dark resistivity varied between 10 11 and 1013 ohm-cm. At
fields 'to 4
42 - 5.10 v/cm Ohm's law was satisfied, above these field strengths
hyperlinear current increase was observed. For strong fields,
Card 1/3

34233
S/181/62/004/002/0!6/051
Elect'rical and photoelectrical ... B102/B138
6'= 6em(E-r-0). From the dark-current rise observed with rising tempe rature.
0
the mean activation energy AE d =1.7 ev was calculated. Light absorption
was found to decrease with increasing 'A, almost vanishing at?~=700P-
Tile optical activation energy was AEO = 1.76 ev. All the specimens
prepared had a high photosensitivity between 300 and 700 mp. For 100 llix
illumination, the multiplicity factor of the resulting resistivity change
reached dOO-500. Tile illumination dependence of the photocurrent can be
n
desoribed by a law of the type Iph =AE ,A and n being constants. The lux--
ampere characteristics were dependent on direction and polarity, In
longitudinal measurements, n = 0.5 - 0.6 in transverse, n 0.32 - 0.35
when the illuminated electrode was positive, and n = 0.7 0.75 when iz was
negative. For E < .5 lux, n was equal to 0.9 - 1.0 in all cases. The
measurements were carried out with Pt and Al electrodes, The el...,trical
ard photoelectrical properties of these layers were not dependent on heat
treatment up to 1000C nor on the prolonged (up to 2 years) influence cf
open air. The authors discovered that As 2 Se3 layers were polarizable and
Card 2/3

34233
S/181/62/004/002/016/051
Electrical and photoelectrical B102/B138
preserved this state for a long time. This polarization was much weaker
in darkness than in light. The polarization effects were studied and 'lie
bound charge was estimated to be 1 - 5-10-8 coul/cm 2. 11. P. Rubancva 4.s
thanked for help. There are 7 figures and 13 references: 10 Soviet-b1cc
and 3 non-Soviet-bloc. The three references to English-language Dublica-
tions read as follows: H. Kallman, B. Rosenberg. Phys. Rev. 97, 1596~
1955; H. Kallman, J. Rennert. Electronics, ~2, 391 1959; M. Kikuchi, S.
U
Jizima T. Phys. Soc. Jap., ~A, 856, 1959.
ASSOCIATION: Fiziko-tekhnicheskiy institut im. A. F. Ioffe AN SSSR
Leningrad (Physicotechnical Institute imeni A. F. Ioffe
AS USSR, Leningrad)
SUBIJITTED: August 17, 1961
Card 3/3

sia8i)62/004/003/040/045
gy) BIOI/BI02
AUTHORS: Androychin, R.p and,Kolomivets_,_.B. T.
TITLE: The photo-electromotive force in arsenic chaloogenides
PERIODICAL:, Fizika tverdogo tela, V- 4, no, 3P 1962, 814 - 815
TEXT: The dependence of photo-emf of the s7stems As 2S3"Au2 Be3and
As Be As To on their composition was examined. For this purpose a
2 3- 2 3
series of melts were studied in whinh sulphur was replaced by selenium
and tellurium in increasing percentage. As S ; 3A -As2Se,; AS233 A82S931
2 3 s2S3
3A Be -A As Be As To 1 As,Se,-3Ao,Te,l
As2S3'3As2Se3; As2Se3 82 3 82TY 2 3' 2 3
AYeY Al and Au electrodes (gap 0.5 mm) were condensed on the specimen,
in vacuo, the specimens were illuminated with 10000 ILuc and the photo-
effect was measured. Results., the Al electrodes were always negativej
(1)
the Au electrodes oeitive; (2) no photo-omf arose between electrodes of
the same metal; (35 the increasing substitution of S by Be anA To was
Card 1/2
MR ticy
0AV M

S/058/62/00F/R/0914
A057/A1O1
AUMORS: Kiseleva, N. K., Kolomiyets, B. T.
T1rLE- On the role of admixtures in the internal photoeffect in CdTe and
ZnTe
PERIODICAL: Referativnyy zhurnal, Fizika, no. 6, 1962, 38, abstract 6E304
(In collection: "Fotoelektr. i optich. yavleniya v poluprovodnikakh".
Kiyev, AN USSR, 1959, 99 - 106)
TEXT; The effect of admixtures upon the electroconductivity and photo-
~!onduotivity of CdTe and ZnTe crystals was Investigated. The preparation method
of crystals, alloyed with admixtures, by which CdTe crystals of the n-type can
be obtained, is described. It is demonstrated, that the introduction of some
admixtures (Sn and Ta) into CdTe effects a change in the sign of current carriers
and changes strongly the spectral distribution of the internal photoeffect. The
introduction of admixtures shifts the maximum photoconductivity to the short-wave
range (460 m1t). In an analogous way acts also the disturbance of the stoichio-
metric ratio owing to a surplus of Cd. The investigation of the role of admix-
Card 112

Un the role of...
S1058162-1000100610911136
A057/A101
tures in the photoconductivity of ZnTe Indicates a qualitative coincidence with
the case of photoconductivity in CdTe. It is assumed that the presence of the
photoconductivity maximum in 'LLE! depth of the absorption band indicates that
the edge of the absorption band corresponds not to the basic, but to the admix-
ture absorption of CdTe and ZnTe crystals.
V. Sidorov
[Abstracter's notet Complete translation]
Card 2/2

8/109/62/007/006/021/024
D234/D308
kUTHOIRS: Ko mi ot~8 B. T,., Litvinova, E. MI., Miselyuk, Ye. G.,
e JU.~
0~ . an
kkho'rik~.,Yu. and 6hilo, V. P.
4'
TITLE: Effect of fusible glass coating on the characteristics
of germanium diodes
PERIODICAL: Radiotekhnika i elektronika, v. 7, no. 6, 1962,
1054-1055
TEXT: Three types of glas5 coatings on germanium diffusion diodes
were tested: As2Se 3'11.5; -As2Se3 T12 Se; 2A52S3 Tl,S. The whole ex-
posed surface of the semiconductor, including t~e D-n transition,
was coated. A graph of a typical variation of V-A ;haracteristics
at,`Uer coating is 'given. The characteristics so obtained were prac-
tically unchanged over many days. Glass coating is found to im-
prove essentially the inverse branches of the characteristics. The
effect of all three types of glaas is nearly the same. Improvement
of characteristics was also observed when the glass had been re-
Card 1/2

I S/1 00,/62/007/006/021/024
Effect of fusible.... D234/D308
moved immediately after coating which disagrees with the result of
other Soviet authors. There is 1 figure.
ASSOCIATION: Institut poluprovodnikov AN USSR; Piziko-tekhniches-
kiy institut im. A. P. Joffe AN SSSR (Institute of
Semicunductors, AS UkrSSR; Phh~sico-Technical insti-
tute im. A-.P. Joffe, AS USSR
SUBMITTED: Pebruary 13, 1961
Card 2/2

S/181/62/004/008/041/041
B108/B102
AUTHORS; Andriyesh, A. M., Kolom and Nazarova, T. FI
TITLE: Effect of iodine and germanium admixtures on the spectral
distribution of the photoconduc~%ve effect in vitreous TlAsSe
Fizika tvardogo tela, v. 4, no. 8, 1962, 2266 - 2288
TEXT: 'The effect of iodine (up to 6.2 at-%) and germanium (up to 35 at-~.,)
admixtures on the spectral distribution of the photoconductive effect and
on the conductiv'ity of vitreous TlAsSo 2(T12SeAs 2Se3) was s'tudied. Both
iodine and germanium shift the maximum Of Dhotosensitivity to shorter
wavelengths and increase conductivity. The activation energy increases,
too. Cermanium also increased the softening temperature of TlAs3o which
2,
is attributed to tho formation of oovalent bonds betwoon the chains and to
an increase in bonding strength of the chains along khich thb carriers move.
This effect was not observed when iodine was introduced. There are 2
figures'.
Card.,1/2

3/161/62/0,)4/008/041/04
Effect of'iodine ... B108/B102
A530CIATION: Fiziko-tekhnichoskiy institut im. A. F. Ioffe AN SSSR
Leningrad (Physicotechnical Institute imeni A. F. Ioffe AS
USSR Leningmd)
SUBtaITTEDs April 29, 1962 (initially),
May 10, 1962 (after revision)
Card 2/2

5/o51/62/012/002/015/020
E202/E192
AUTHORS: Bashko, A.o Prokopoval G*j Kolomiyets. B.1
Pavlov, B.V., and Shilo, V.r.
TITLE; Absorption spectra of glasses of the AS2 S3-As2so3
system
PERIODICAL; Optika i spektroskopiya, v.12, no.2, 1962, 273-2.77
TEXT: The purpose of this work was to extend the study of
the absorption spectra of the above system to the region of 25 A,
so as to determine the wavelengths of all the absorption bands.
The glasses were compounded according to tLe method-given
previously (Ref.4; B.T. Kolomiyets, N.A. Goryunova, ZhTF, 25,
1955, 984; B.T. Kolomiyets, N.A. Goryunoval V.P. Shilo, Tr. III
Vsesoy-uzn. soveshch. po stekloobrazn. sost. (Proceedings of the
3rd Conference on vitreous state) L., 1959). The following were
prepared: AB.S ; 5As S As Se ; 2AS S -.As Se ; As 5 As Se,;
3 2 3*1 2 3 2 3 2 3 2 3' 2
As S . 2As So As S 5As2Se31 A52SO3 Disc-shaped samples
2 3 2 31 2 3"
20 mm in diameter and 0.15--3.0 mm thick were cut out, ground and.
Card 1/2

IM-lAOR9wpCM--nl!~lr---U---~- IIM~
--- MMMMU
KOLONIYETS, Boris Timofeyevich; FREGERj D.P.p red.izd-va; OVIRTS,
V.L., tekhn. red.
(Vitreous semiconductors) Stekloobramwe poluprovodniki.
Leningrad,, 1963. 42 p.~ (Leningradskii dom nauchno-
tekhnicheskoi propagandy. Serliat Poluprovodnikip no.3)
(MIRA 17:3)

Effect of disturbance of short-range order on the electrical properties
of solid solutions with tetrahedral structure of distributicn of atoms.
D. 1. Tretlyakov.
Some electrical properties of solid solutions in the system
AgInTe2-2InSb. S. M. Manayev, V. 0. Prochukhan.
(Presented by 0. 1. Tretlyakov--15 minutes)..
(Paper not presented)-]
Investigation of thermally.stimulated current in vitreous T12S"s2 TP-3-
A. M. Andriyash, B. T. K016miyets.
Measurement of the mobility of current carriers In vitreous chalcogenide
semiconductors. 1. a. lvkin,, B. T. Kolomiyets, C. A. Lebedev.
Oxychalcogenide Glasses. B. T. Kolomiyets V. P. Shilo.
(?resented by B. Tt_Koja
Aft&;.s -20 minutesi..
Report prasented at the 3rd National Conference on Semiconductor Compounds,
rishinev,, 16-21 Sept 1963

IV, -V-
-e---';cOnduczin9 P-cPerties of alloys of t.~e sysze:, ti-
t . . i's 5
ye'scyeva' !. S. Kovaleva, T. KoIcqjXj_tS_, K. S. Kranchavldh.
Report presented at the 3rd National Conference on Semiconductor Compounds,
Fishinev, 16-21 Sept 1963

IV
ations.of the solid solutions of the antimonides of indiwm
Investig . vanov-Omskiy, a. T. KolomiYeZs-
and gallium. 1. S. Baukin,.V. I-J
Report presented at the 3rd 14ational Conference on Semiconductor Cormounds,
Kishinev, 16-21 Sept 1963.

E:ectrical propert;es of nonocrystal ) ine HqTe and .: ts al loys wi :h CdTe-
V 1. ivanov-Omski* A. A. Ma:'kova, V. K. Ozorodnikov,
Y,
X. P. Smoikalova. .(Presented by V. I. Ivanov-0mskiy--15 minutes).
Nozes: HqTc in semi-metallic; at 40K the band overlap is - 0.0 evi
h4,e = 56 to 100.1
Reoort oresented at the 3rd Mational Conference on Semiconductor Compounds,
Xishinav, 16-21 Sept 1963

-TD
7;iti nn o
A 7 h.:~ nz u c f-: v v r- au s
Ticn or aqu-IlaDV2.um UV.L.1a Mvj-utjvTlv uy U--

;-j
!isles
a!)1v Rlow rate of cooling it is possible to conduct cri-stalLization under conditions
stalu-~aibrv ConditioTm- to eqtd1ihrftm-. Thca samp-les-were--
closer are- thov.
cry - - - - - -- - ''i ~ - . . ..J-1 ~ ~~e TT-
rwa~7uit,-'
Was S e n .5 4,r~-
1 .H Th- rate of cooling was o,--i X-riv -.,iltrRrrinn studies inci-
U

MEE
I~e -i,,thcrs exc-41-
TED 00: SUB-
CoDr,!~ - M14 4

BAUKrN.T I.&j GAVRILOV, N.I.; MIPTF-S~-B.T,
- Preparation of equilibrium solid solutions by slc*w crystallization of
the melt. Uch zap. AGU.Ser. fiz.-mat. nauk no.2s9g-103 963.
(MIRA .18,R3.)

'KOLOMIYFTS, B.T.; LEBEDSVp E.A.
Voltampere characteristics of a point contact with glaos-type
semiconductors. Radiotekh. i elektron. 8 no.120097-2098 D
163. (miRk 16t12)

17972-63 EWP(q)/ERT(m)/BD_S -_AFFT-d/ASD, -pq-4 WH/jD/fRDW
ACCESSIM NR: IT3000631 B/0181/63/005/CO5/2461/11.65,
b rets, 9,14
~:Tl TLE: Local levels in glag T12
zikK -tverdogo -tela. -1vv_5t._nG6_,5 ---- ---
1963
7 _T -
.~'TOPMVAGSt --- semiconductor 'f6rbIddeiY-bandi~:TlnSeAs2TO dark - conductivity
3F
AB3TRACTo, The authors de~ce~be~the..~dfrea~-6f,.Preservirig high ark cOD uctiv~t,y, as a
d
'Tresult -of short-pariod illurination ~ of- gazges of - glassy VIA: 2Te mpera:-~'
: 3Rt 10"v te
~tures, and they present results of-measuring thermceleetria curre~tg in these
sa M-les. The mathzd of preparinig sa*es and testing them for homocrene'Lty is. the
.same as proposed by the same authors in.'Novy*ys issledovaniya po poluprovodnikovy*m
loaterialami U (Izd. %rteaT moldoveny-stski,R-Kiihinev-, 1963) .- The samples wempia ed] -
a
in' 0 glass flask which was -first evacuated and fined with nitrogen. Temperatures:,
Iwero measur3d by immrsing tte flask in a Dewar flask with liquid nil~ogen and alsa
.by means of an electrical p0laced witUn the flask. An EMU-Mftlectrometric*
niptifiereand an EPPU-5M, 11"Lletp recor erpw
a
r uto a d ere emloyed to -io-asnFe the cUrrent.-'!
!Tbe aut a found that apeiilrlens coo,1-9~a ~ow tenTerature and then illuidtated
ifor a short period showed a much Ugher dark conductivity after cessation of

KOLOMM7S,, B.T., doktor tekhn. nauk; SHILO,, V.P,, inzh.
Softening points of some chalcogenide glasses, Stak. i
ker. 20 no.StIO-12 Ag 163. (MIRA .16:11)
1. Fiziko-tekhnichaskiy institut AN SSSR.

are required foi
the
as. Severia T, ward obtalned bY changM;

-7--
L i1891_6j
AP3004688
1C=SIO11 M;
omposition 6f--glasses of the T1-As-3 8nd Ti-As
8~6ichiometric a -Se systems
se glasses as additives. The glass'.
introducing Ge or I into some of the formation
regions of these systems are shown la Fig. I of EnclOsure. Samples verE.- preparecl
i by heating the requisite amounts of the elements in an evacuated an(l sealecl'quartz,,
teat,tube to 7100C (in case of Ge-co Ing compositions, to 900C) for 2 hr; the
atain-
smples were then cooled to room.temperature in the furnace. The softtening tem-
peratures were determined vrith, Lazurkin I s apparatus. The results indicate that
an increase in the T12S or T12~ccoatent of the glasses resulted in m m3ticeable.
T drop. Two glassy compounds vere selected as starting materials for further
Nudy: T12S,AspS3 and TlzSe-As Se One-lLalf to 2 germanium or 3 iodiae atoms
per molecule ware introduced Into- 1;29 V A82Se 51 and Tl2Se-A52Se5. Germanium,
was iatrodured to strengthen the system by cross-linUng it with c(rialeat bonds
to form a three-dimensional- netvGrk,.structure. Iodine was added. -to -weaken. the, -
system and shorten the chiiiis -of the - original - chain structure. .. T-n the- #ezence,
of the additives T, range I from 30 to k500 for:AZ2S~ and AsjSe~ and ros13! from
109 to 214C for Tl~se-As.Ses... The germanium-containing glasses were very stable,.
but those containing Iodine seem to be unstable and evolve iodine
if the iodine content-is-hi -The study: Indicated that Tel~ can-be regulate
gh. d
i grange . from room - temperature to Li(raids can be obt a, 1,11~nd by introduction 6:C
iodine Into arserde sulftda or saleaide,~ The rasults Sac-A ti~ -~-Irirm t~z*'Qhaiw
Card 2

IWO;T(M) IZ-VilF,
)N Nil: Al',4044563 S,10000/654 /rOO/000/0057/006.3
AlUTHOR: Andriyesh, A.M., Kolomiyets, B.T.
TITLE: The problem of current carrier mobility anc, effecti've, inass in v--It-caus TI
-As sub 2 Te sub 3
~i st;
j;
EuPiC TAGS: current carrier mobility, 2-
force, thalRum semiconductor
ABS-ITNACT: A special amplifier, patterned after Yemellyanenko and Trishin's device for
semiconductor electrical properties, was used In a studV of die temperaWre
if rual UC down to - 11001 of !)it, -:ii-Aurtivitv ind th,-rmal emf
p'- iri 7luart.
j': zred fr,,im indi
~)e norrogerze~~>us by tests -,I X -?' C
electrical conductivity. The electrical conciuctivity )i Uip .5 IMJ n1m sarnpies
a 10-20C end-to-end temperature gradientwas found to be 2,5 x 10-3 ohm-1CM-1 at room
Ca,d 1/2

12652-6-5
ACCESSION NR: AT4044563
temperature, decreasing exponentially
qu ha 930 g"We 6 t room -temperature" d~
tz a halp wiechanfsni of--666 c-tivify and was found to bf~ an inversf, function of ieni-peraWrc,
--fl:io !-f 1550 wv,'degree at -IoOC. The ma'-;
~ 1( was if th-0
a' and Lhe mobility of the holes was found tot)e rf)kvrh1v o o- , r of mag -
'01 Pi- Pi
~,i, -,79a~er Lhan Lhat of the electrons. The temperatiire clepondr-noo of tho ernif anO
~,juductivitv are diagrammed. "'ne auffior.,i thank A A V!i~jwdjn. who -,)(,r-
K-1 av anpksis, V. P, Shi'mv w'h- :.I,:
Yernel'yanenko, -,~, ~o vailuLt-Wz~ ao-, .":Lz art, ria-s:
'017 Ll hdas-.
7A -l',ON7 Institut fiziki i natpmatilti AN Mol SSR (In6tivat. of Physics and
AN Nfol. SSR)
SUBNHTTED: MecU ENCL.- 00 SUB CODE: TC, EC

KOLO%MET=SL B. T TZMEV,- E. -A. ; NVMS, T. F. ; Sar-ANOV , T. I.
_t~~.;._MAMNTOVA) T. N. ;
LZIMOV, V. Ye.; SALKOV,f. A.; SIMMU4AN; M. K.
"Fast recombination processes in single cryBtals of Cd8 and WkOje."
report submitted for Intl Conf on Fhysics of Semiconductors, Faris, 19-24
jui 64.

AOCESSION NRs AP4034909 S/0181
AUTHOFGs Khodosevichp Po K.; Kolomiyets,, B. To
TITLE: The photoconductivity or selenium at low temperatures
!SOURCE: Fizika tverdo
go telas ve 6. not 5# 1964P 1325-1327
!TOPIC TAGS: photoconductivity,, trapping levelq seleniums temperature dependence
ABSTRACT: The Authors describe work on polycrystalline selenium in the range from
room temperature down to the temperature of liquid nitrogen. The conductivityW128,
measured both during illumination and in darkness after cessation of illuminationo-11
It was found that the photoconductivity increases with dedrease in temperatuiri and
is proportional to applied voltage up to fields of 300 v/66. The photoconductivltyl
is saturated at rather low values of illuminations On removing the lights, the
increase in conductivity (produced at low temperaturas) is preserved for long
periods of time* This in explained by the presence of local levelsr such as
it
!trapping levels, within the forbidden band of the seleniumo When samples were
warmed to room temperature and then cooled againj the dark resistance returned to
its initial valuee "Our assistants# 1. Ko Bandrovskayaj V* Go Homanovs andk Me No 1~
'Card
.0-

--V rr- r
ACC NR. AR600-9954 SOURCE CODE: UR/0137/65/000/012/GO52/CO52
AUTHOR: Biukin. 1. S.; Kolomiyets, B. T.
TITLE: iffee't of the orientation plane of the seed on the increase of monocrystals.
of Indium antimoulde gallium antimonide alloys
SOURCE: ~Ref. A. Metallurgiya, Abs. 12G363
REF SOURCE: Uch. zap. Azerb. un-t. Ser. fiz.-matem. n., no. 4, 1964, 97-99
TOPIC TAGS: Il- mjj:bM&,1Inj antimonide,,tvinning, wo=-34-
m
ent
ABSTRACT:ilTheifffect.of the entation plane of the,#ed (111) and (TIT) on the
ith
growth of InSb single crystal with small additions o&!;aSb by the zone wathod has
been investigated. the pl (111) and (111) of the seed were preliminarily ground,
polished and etched In a CF-4 (SR-4) diluted etching solution. The results obtained
indicate that single crystals, grown with the ceed and facing the melt with the
plane (111)..possessed twins. When the seed was oriented toward the melt with plane
(M), twine were not obs*md. (NT)
SUB CODEt 1;/ SUBM DATS: none
CUM, UDC#. 621.315.592.-548.552,.546.682'(16

ACCESSION NRt AP4034929 S/0181/64/006/005/1457/1461
AUTWORi Ivanov-Ousklyq V, lei Kolonlysts, Be Tel Nal'kovaq A*' As
TITLEs Optical and -.1botoolectrIc properties of HgTeo and its
allpys with CdTe
SOURCZ: Fizika tvardego tole, v. 6, no. 5, 1964. 1457-1461
TOPIC TAGSs HgTot HST*--CdTe alloys, optical proportion, photo-
properties, pfiotosessittyLty
iABSTRAM The nature of the photosensitivity of HgTe and of
Cd 11g To specimens is discussed on the ba*Ls of measurements of
x 1;~
their tLcal and photoconductive properties, Experiments were con-
ducted*wLth p;type,specLuens with an acceptor concentration of
1017-1018 ca JaLc .(1017-1018 cm-31e Transmission and reflection
were measured At,*150*and 300C at 1-25v on the IKS-12 spectrometer
with the IFO-12 attachment, and the absorption coefficients were
determined from the data obtainedo The photoconductive properties
1CWd lk 3.
L

ACCESSIONi Nft AIP'4034929
were studied with equipment described by 5, To Kolomiets and As A*
Hal'kov (FTTI, 59 12199 1963). The photonagnotic affect was measured,
in magnetic fields of 500-20,000-0t,and the photocooductfivity in
electric fields of 3-15 v/cu, The experimental results are give:
in the text* Optical data indicate that specimens with a low HST
content (x),0.2) are scuLconductorso and those with a high HgTe
content are semimetals. The photosensitivity of the spectuens has
a complex naturee to HSTs and in Its alloys with a high RgTa contate
(x