SCIENTIFIC ABSTRACT KOKORIN, V.V. - KOKORISH, YE.YU.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000723710010-0
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: December 30, 2016
• Document Release Date: June 19, 2000
• Sequence Number: 10
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

#-#w1 - W _va
LION, V.V., professor; ICCESIN, T.V.; EWGLMRIff, A.Ya.
taialifications of an agino*r technologist. T*kas.prov. 14 no.S.
11-13 Ag 154. (MM 7: 10)
1. Direktor Vassoyasnogo'saochuogo Instituta tokatillnoy pronvablen-
n.osti (for Kokorin).
(Textile Industrv)

KOXORIN, VasiliV Vasillbeivicb; SOKOLOVA, V.y&. redaktor; JLIXINA, B&Mo
[Installation, amseAlj, repair and adjustment of cotton ring
spinning macb1newl Ustroism, montazh,rmont I naladka kollts*-
priiAillmVkh mashis. khlopch&tobmashnoi prourshlenAostis Moskva.
Gos.m&uchno-tekhnA.xA-vO Htnisteretva prourshlotovaroy ebirokogo
potroblesita $861, 1955o 156 p. (XLRA 8:8)

IOZORU, V-V. koadidat takhaichookikh nauk.
Fixing flats on it carding machine. Tokst.prom. 15 no.1202-33
D (awt go)
(Citiding machines)

MMOSUVOT. llilwlayil-ra-i~v:mi kand.takhu.nauk; MMYAM, Boris
Alekmeysvlohp-K=IX, log., 2etseAseut; JMYUKOV, T.M.,
v~etsrede; OWATAj L#Ajj reds; XNAKNINj NoTel tekhnaed,
Ecotton openl:mg and plakIng oqaipwutl Rasrykhlltollno-
trepallnyi agregat dlia kblo*a. ~ovkws, Oot.usuchno-takhn.
lxd-vo lit-ry polegkol promyebl., 1959, 130 P. (MIRA 13t3)
1. GlavW konstruktor sayoda Kustekstillmash. (for Belyayev).
(Cotton mehinery)

MEDRIN
Now. method of opsnigg aotton. rxv. vys. ucheb, sav..; takh. tekst.
prom. no.3.,7(S"80 1399 (KMi 12.
l.Tseooy=nr,r saochaff Institut takstilluor i legkoy prowshlonnosti.
(Gottan Uftnufacturs)

5
7
k-66- EW1jm'A/T
L 359C WEI JILT IT I-Jae) JLUUVJG - ---- -
---ACC-NR,---AP6O07360
7;
AUTHORS t Kokorinjo V, V. ChUistov' Ke Ve
11WWL
3j -
ORGs Insti to of Metal 'igmli' AN- UkrsSR (Institut motallofiz1W. AN- UkrSSR)
TITLE: stagij of "dec.'Ov- 48'ition. of supersaturated solid MIAL004 Co-1Ta
The initial
and Go- Nb
SOURCE-. Fizika motallov.i. metallovsdeniye, v. 21, no* 2. 1966* 311-314
t TOPIC TAGSs cobalt allay,,, tantiltim-'a'op't'aining alloy, niobium containing allo.Vp X vX-1
ray spectroscopy a6lid.soliltion'itheizal decompositiong crystal lattice parmter
ABSTRACT: The m hanism o;C-the-initialstages of decomposition of supersaturated
eq
solid solutions of Go--Ta P lit %'TaYand Go.Nb (4 wt % Nb) was studied by means of
X-ray analyAs. The study supplements the results of D. A. Fritalen,, V. P. Folknei,
B. R. Barret, and R. V. ftinshteyn"(8b. Stak-eniye splavovs M.9 Metallurgisdats 1962,9,
str. 450). The experimental procedure is described by A. M. Yelistratov (DAN SSSR2
1949, 89j, Is 337) and Ye, 13. Neiteranko and K. V. C huistov (5b. Voprosy f isiki
Z.~.: meta1lov, i metanovedeniyat No, 19 -~Kiyev M, AN UkrSSRP stre 155) 9 The 6xperime
alli t so Fig'.':-l). The initial stag
results are presented graphic y es in the decompoei
tion of oupereaturabed Co--T& aM (10-4;b solid solutions are aharseterized by the
od).k' These reglaim an 416trAh1w
fmwtion ot plAte-11ke rojim (0JO cosplax
Cwd

KOKORIN Ye V.
Using amplitude curves of reversed microssismie logging for the
selection of' the optimal oondItions for excitAtIon. Razved,
geofis, no,!427.29 16,5o WW 18 9)

eiF809
S/07o/6O/OO5/oo6/cO9/OO9
IY3 /0 (1 ; o 3 ) m1n, E201/E391
AUTHOR: Kokorin~ Ye.yu.
TlTLE-. Use of the Peltier Effect in Preparation of
Triode Junctions During brawing of Germanium
!4onocry3tOlS.,from Melt
PERIODICAL:, Kristallografiya, 1960, Vol. 5, No. 6,
PP. 957 - 958'
TEXTi The method of preparing nemqiconductor n-p-n
structures, using the Peltier effect, is analogous to the
method of change of the withdrawl rate from melt. In the
Peltier method the rate of growth of a germanium mono-
crystal is altered by passing DC pulses through the
crystal. The current which causes electrons to flow
across the crystallization front from the melt to the
crystal Is known as the "faward current"t it raises the
rate of growthof the crystal. The current of the opposite
polarity (11reverise current") reduces the rate of growth.
The possibility of using the Peltier effect in this way
Cardl/3

87809
S/070/60/005/006/009/oog
"01/23,9 1
Use -,of the.Feltier Effect- in:~Preparation of Triode
Junctions During Drawing.of Germanium Monocrystals
from Melt
was-pointed out first by A.F. Ioffe in-1956 (Ref. 5).
Pfann, Benson and WernicklRef. 6) described some practical
applications of this idea, .The present paper describes a
study of the tonditions.neoessary to produce n-p-n
triodes' Germanium wix.melted in a graphite crucible,
using high-frequency currents in an atmosphere of hydrogen,
The rate of withdrawal 4a8 3-4 mm/min and the rate of
rotat 'ion'of the crystal during growth was 60 r.p.m. Pure
antimony and gallium were used an'the alloying impurities.
An n-type,crystal of 10-15 mm lenith was drawn at the
rate of 4 mm/ming Triiode structures with p-regions of
15 - 70 )L thicknesalwere obtained on passing a single
reverse pulse of 80 A/cm 2 current density and 3-5 sec
Card 2/3

KHEYFETS, David Santilovicb; FURWj S,I,,, otys red.1 KOKORIN,
7 1., red.; MARKOPH, 1~00# tekhn, red.
["Tomp-6" urA "Temp-70 t.elevision rocolveft) Tolevisory
"TEMP-611 i "TW-7," Mookvas Vlaslltdatp 1963, 80
(Bibliotekii "Televizioraqi priem'" no.10) (MIRA 17tAo

ZYUKOO A.G.; PETROVICH, N.T.p prof,# retmenzent; FINK,, L,M.,,Prof.,
red.; KOKORIN,, *fu.I., red#,*, ROMANOVA, S&P,# takhno redo
[Interference refection and efficiency of co=mnication
systems] '7?o=khmstoichivolst' i effektivnost' sistem
eviazi., Moskva$ ~Sviazlizdats 1963. 319 p. (MIRA 17:3)

GORON, Isaak Yevseyevich; KOKORIN, lu.L.-aga-
[Construction of skeleton diagrams and level diagrams of
radio broadcasting channels) Postroenie skelatnykh
skhem i diagram'm urevnei radloveshchatellrqkh traktov.
moakva., Izd-vo "Sviazl," 1964. 23 p. (MIM 17:7)

GOL IDENBERG, Uv Molseyevicb;, KOKOR.I.N,.Zu. 1. , red.
[Principles of pulse techniques) Danovy impullonoi tekh-
niki. Izds2.1 dop. Moskva., Izd-vo "Sviazi," 1964. 431 P.
(FJRA 17: 8)

KWXOV, Aron Zillmanovich; KM, X.I., otv. red.; KONORIN, lu.I.,
red.
[Power ampli;iero using multioavity klystrono] Moohcbqo
usiliteli n& mnogoresonatorrWkh klistronakh. Moskva, Zzd-
Vo "Sviazipm 1964. 167 p. (MMA 17 - 3-1)

KHEYFFITS, Dw.,id Samallovich; KO-KORIN,_Yu.-..J.j red.
(The PTEMP" television receivers (models 6p7 and 6M)]
Televi2ory "TEMP" (Modeli 6, 7 1 6M). lzd.2., dop. Mo-
skvas Svias' . 1965. 64 p. (Biblioteka "Televizionnyi
pries," no.19) (MRA 1814)

DOLUKHANOV, Mark Pavlovichl KOKORINj, Yu.I.,q red.
:[Optimal methods for signal transmission using radio com-
munication lines] Optimalirp metody paredachi sIgnalov po
liniiam, radioeviazi. Moakvap ltd-vo Wazl, 1965. 171 P.
(MIRA 18W

VOLIPIN, Jinatolly GrIgorlyeviahl ZMLEHOKO O.As, ctv* red.1
W) Tu I
[hincipal coneaptc wA calculation of the reliability
or a-, radio traiisiltier] Os-novi'Ve poniatiia, i raschet -
nadesbnosti radlopersdatchika. Ho skva, Sviazt, 1965. 93 P.

Vices in me Leaning Procepej
-xsou=
7,N
d
TX;S
me
lit
Jog
"ideat tole
ions! ', r_the"_.4'u9'plCds_'ot_ Ministry of -Ccimunicationa,SSSIC: and wo-- attendad~~-
by L'ep BeRtiltiVeS-TrOM7 MOSCOW `_Le4qjr*di. Ndvo*ib.lrsk,-- K - ys ev, Sverdiovsk,
kent Alma-Ata, Kiev Khabarousk, Khaz*OT,- Hinskg and elsewhere. 1. As Zelenski Of
lhe Kharkov Commications Technic --spoke -th
um on, a -ON-20 teochirm machl pj6M?rofdasor'~
N. I. Chisty.1kov 0 the Moscow Electrotechnical Institute of Camunications Presented
-a somewhat nigative.view of teaching machln~wi ur tead improTments In
hall-- blackbb,*ids--- - m_mdproo list rrA 9 0-rag
80 Alght-Ing-0-4kt ture *to The rA*d for better.
and centralLsation ofres4archlb-leaching Inchines and programmed low
7-- !'4.
1/2
ci!td

-T-7-11 _7
ACC- kt:' -"6~,0305
OWas loss glad id, -leaming imot.
Tho" Idid
pOt: panti As6
OCL~ Orwr4mmed I
h0ou i2wwuy.~_ q_
1 :7' y
JDATtt-.':','!,
.01
-,o
'12i ;~TU~SA L-r,
%r T
T, ~4
_IMIN'h,~~! _-Z A.,~Ln;
-4, -IA
I 1~4
4, ---l' i-
Wrl
Ar ql",.~;.~~4
ql M_~
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lj.
t.14
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8";
. . . . . . . . . . . . . .
2/2 C
-:i
it

KONDR'rXk, A.
Workers I bealth abould be taken care of and Inproved. Gov.
profmolusy 7 no,9136 My '59~ (14IRA 1218)
10,Bortkbirurg Krasuoyarskoy krayevoy klinichaskoy, bol'nItgy*
(tabor and laboring classes-Medical care)

USSR/Farm Animals - General Problems.
Abe Jour Rof Zhur - Biol., No 18, 1950, 83321
Author Kokorina) E,P..
Inat Institute of PhysioloMr) AS USSR*
Title i'malysing Effects of Thyroid Hormones upon Physico-Cincmical
Properties of Lactic Fats. lot ]Report. Effects of "':Tori-
mental Hyper- and Hypothyroidism upon Synthesis Pro=;scs
in Lactic Fats.
Orig Pub : Tr. In-ta fiziol. AN SSSRI 1955) 4, 109-122
Abstract : Two sorics of tests were performed on 7 cows taken from
horde of the Scientific Research Station, Institute of
Physiology im. I.P. Pavlov AS USSR. In the first scrias
of tests, the cows were fed sunflower oil, which had In de-
teriorating effect upon the q~aality of lactic fat (U).
Iodized casein (I) foodin,,G followed. In the stxoad test
Card 1/3

46. ioui 9- 61f i~~ kd4 ik A i~oi 63'h
6GAqs'-- go, voro: givon"Aiit -_afid'then'_LF sIt vas
f
fotuA`iha.`f softe'nd~,a~d.ramovos,.ybysico&emical" property
chcultos'o 'whkh- au-niflo'woir oils hai produc&*:,-, ;U6,03
qptiwl'dotqds,of.Vv,_oro,~ce blishod,. ich'dffddt procce-
dos,of diA Mquoliiy~ the'nost. Inerondes o:V
milk
a' 8~of tho
be 6um taltod.- liti~ ~ii
Sam Prepare. idht.:!Thd'.mM1d' tat c6htent* increases ~Consl-
t
46r~Uy,-tlicrew& ,In'.'dab or tcot., offects of hypothyroi-
dism upon LF.synthesis voro studied on 6 goats, From 2 or
those goats the thyroid gland (TG) vas removed u6 days
before the test, In order to establish reaction difforon-
coo, caucod by oil foodinLi in normal goats and goato with-
out TO, all six pate were fed 1.25 gr of vegetable oil
per 1 kg of live veight daily, Such feedings resulted in
all Ulai-im of the Iodine colzit by 499 units in normal
doats) and by M units in thyroidectomizef! pats.
C"d 2/3

"WO"
Analysis of the effect ofthe thyroid hormone on physical and chemical
properties of butterfate 4pert no*Z: Iffect of air temperature and
physical @train on the phyvical and chemical properties of butterfat.
Trudy Instof1slela 4:123-131 155. 1 MU g14)
1,Laborateriya fisiolegii seIsk*kh*zyaatvennykh shivotnykh. Zaveduyushchly
I.A.Bar.wohnikey.
(Milk-Analynts and examinatlen)(Thyrold gland)(Tomperature--PhyvlologlcaI
affect)

1, rP UM Z~,MEEVWM
JEOIDRINA, J.P.
Pd6dd
Use of certain tests in studying the funda ental characteristics of
higher nervous activity in cattle. Trudr Inst.fisiole 4:147-165 155,
i'Laboratorlya fislologil sel'skokhosyarstvanufth shivotnM,,Zavs-
duyuhchir LABaryshnikovs
(Nervous system) (Conditions& response) (cattle)

EXCRIRL, 1. P.
swam I".1"NOEW
Method of production of motor conditioned food reflexes in cattle.
,7iziol.zhure 41 no.1%96-100 Ja-1 155 (HM 8:4)
1, Laboratoriya f1siologil sel'skokhozyaVetvenvqkh shivottqkh In.-
stituta fisiologil imo 1. P. Favlova AN 855R,
CONDITIOM.
prod. in cattle)
(CATTL11
prod: of conditioned reflexes)

ccu.-?% Z, ussi?
CAT-,'(, U?Y Farm Animals*
Cattle,
AB'~'; . JOUi, RZhBiol., F0- 1, 1959, No. 11990
Au T i i OR Kokor

TITL-~ The Reflex Characteristics of Milk Secretion
In Covis with Varying Mpbility and Equilibrium
in Cortioal Nervous frocessose
0'a-, IG. PUB. : Dokl, All SSSR, 1956,9 106, No 1~jy 7406-749
A-5--YRACT : The reflexes or milk and 'fat flow were
studied in cows with different typologioal
characteristics of higher nervous activity at
evening milking time, Two-hundrfid-an6-eighty-
six expariments were carried out on 9 highly
productive cows of the brown Latvian and Datch
breads with 2-8 laotations, As a result of
the daily repetition of a specific comnlex of
stimuli which wore connected with the process
of milking, stable conditioned reflexes of
/0 004,w~
1/
3
S- el S- S ~e-
CAT.-Wofty
ABS.- JTOURI. RZhBiol
AUT'lliOR
1959.o fl.o.
ORIQ.- PUB.
i.~.-,)TRAWA milk and fat flcw war
- . .& established Inthe
.COW.8.01.1 th6 usual ster" ooty pe
of dtiliAl L, ' 1king
t .no,, 111i
lis~n"~ T W ~6f thO Milking girl, etcl~
,q 11,' "ap-JAPPM 1~ t
.oro
'Ated ~ an, llihibltio f lfi,oidai-to
ob ia~ o -ref 16 a
t lu'Md.- rijtijr6 to
prddijb tibia'" 1 5 pa
Pr6fiervel"it
during milking.'
Thd~ diff jj-alit COWS to chan&d
milkin' co
9 '~diii6ns is not determined by breed#
ngeo ti&6 Of lactation, magnitude of milk
yield and the.,milk's fat content. The Inhibl-
213

1-tM/;FUMnand.ADLMlPbP
lploa., ~O~YOUB: S to=. T-10
Abe Odur- Hof Zkw - 3toIMLym.#, X0 10 lsPo~ ;c,. 3W4
)Uthor "91miLMAIL-1. P.~
7~,
3hst 116t7gi"
Title Xffoo+,, 'of -1affe ine on.'dotxUtioned Ref lox Activity in
Con
Orig Pub Z. Ypsh. neryn. 4syst-sti, 1957, 7o No 5o 727-732
Abstract In 12 cove) the strength of the stLmlation process vas
established on the basis of reaction ohw*es in the
stereotype (of.,motor reflexes on a food reinforcement),
made up of 2 positive, and of 2 differentiation reactions.
changes in the hL her nervous activity (a beyond-ths-
limits inhibitiozil were wted, lay administration to the
Cows of 0936'- 1#0 P of pure caffelnes No correlation
vas found between the rapidity of appears a and con-
solidation of the first conditioned reaction and the
Cak:1/2

USSR / Farm Animalsb 'Cattlb.,
Ab3 hur Her zhut I. kol6ijiO, ~N6 21 1959, ko. 7376
Author 1-jokorina,
Inst I No
Title : Higher Nervous Activity and Milk Productivity
of Cattle
Orig ?ub :Zh. obahch. biol., 1958$ 19, No 2, 148-162
Abstract It was established on 21 cows of various
breeds that the level of milk productivity
and the quantity of milk fat during lacta-
tion is higher in cows of a strong, well ba-
lanced, active type (I) and, with some excep-
tions, in cows-of 6 strong unbalaneed type
(II) in t.erms o'f their higher nervous acti-
vity than in cows of a sluggish and weak type
(III). Lactation curves of the (I) group
Card 1/3
USSR Farm Animalq. "le.
Abs Jour IRef, Zhur. BlolWyA. #p, 2,, 1959, No. 7376.
reach a hlgh~ levej,aft.er ~parturitionand be-
A' 1 -.1 arof .(II) group
come..'gra.- ua 1y lower;- n cow
they'Ipi6b'eid more steeply; lactation often
torminates.suddonly. In cows of the strong,
well balanced inert type the lactation curves
decline slowly and radually or ataIrcase'like,
in the cows-.of the f111) group the lactation
curves are steadily maintained at a low level
throughout the ontire'laotation period or de-
cline sharply after having reached a high le-
vel after parturition. Daily milk yield fluc-
tuations, the quantities of milk fat and the
rapidity of milk discharge, changos within
Individual lactatione are lose intensive In
cows with a high and medium high activity of
cortical nerve processes than In cows with a
Card 2/3
56

X0110MAP ZIP.
Conditioned refl-ex of laotation and its inhibition in co,wo with
v~wioua tnwlogical characterlatios of. higher nervous qativitys
Nauch. soobo Inst. fisibl. AN SSSR no.lsl93.-193 159. (MIRA 14:10)
' 'LP
1. Laboratori fisiologii sellskokhosyaptvennykh shivotnykh (zav.
I.A.BaM1201r) Inetitute, fisiologil Imeni, Favlova AN SSSR.
(COVDITIONED'RESPONSE) (4CTATIOH)

IDSMINA,
O"racteristics of the lactation reflez In cows vith cortical
nervous processes of different strength, Trady Inst,fisiol, 8t
46-50 059. (XM 13:5)
1. Taboratoriya riziologii sel'skokhosyaystrenufth shivotnykh
(myedoyasbohly - IA~ Daryshulkov) Inetituta fisiologii In.
I.P. P&vlova AN SSSL
("Wukmm)

KOKMINA, A.P.
Nothod of c&thaterising the udder' Yisiol.shur, 45 uo.12:1499-1505
D 159. (KIRL 1314)
1. From the Taboratory for Physiology of hrm Animals, I-po FATIOT
Institute of Physiology, Leningrade
MTHMMUTION experimental)

KOKORIM We
Coordination of the 090ratory aotivity of individual quarters of
the udder in bows. Fisiol. shur., 47 no.106-63.Ja 161.
(MIU 103)
1. irom th;-Laborator*.r.of the Fam'Animal Physiology# Pavlov
Institute I Phy'siolo t. Aaademy(of 8 enoss of U.S.SSRV , uniagrad.
IACTATIONF aowa~-

KOKORINA, E.P.
Coordination of the lactating activity of individual quartits
of the udderin cove.. Fisiol.zhur. 47 no.8tlO24-1032 Ag 161.
(MIFA 1438)
1.'From the Laboratory of Physiology of Farm Anilmls, I.P.Pavlov
Institute-of Physiology, Leningrad.
(UDDER)

IMORnAx I.P.
nervous activity and milk productivity in cattle. Olve
AN SWR. ser.biol. no,69905-914 N-D 161. (KMk 14ill)
I* Inatitute of Pbysiologyp AcadmW of the U*S*S*Rop Isid3qp-ado
(=M) (LAMATION) (M 3 SYSTM4)

-KOKORINAP Z.Pl
%thodology oflevaluating the propertioo of-basio nervouo
procenoso in determining the type of higher nervouo activity
1A animnl by-conditioned motor food reflexeo. Zhure vyee
nerv,"deiat,,13 no.21361-370 W-AP163* (KERA 16&9)
19 laboratory of Parml W=1 Phydiologyp Pavlov Institute
of Physiology, U.S.S*R* Academy of Sciences, Leningrad.
(MWOUS 81STEM) (CONDITIONED ;ZPOM)

KOKORINA, Elp,
Possibility of apply"Oome indices Aft, U6 determination or the
nature of the force of wt excitation and the mobility of nervous
prooesses in 6 tabl1shing the nervous aytem type, Zhuroys,nerv,
deiat 14 no.li;5-3.01 Ja-F 164, (MMA 17W
1. Laboratory of Physiology and Biochemistry of Lactation.. Pavlov
Institute of Pbysiology...U.S.S.R. Academy of Sciencess Leningrad,,

MOKORINA, E.P.
.Elva,luatlon -if typological characterl9tics of ns"-auft pro,-eases
when iomparlng the results or several rurctional Lests. Zhu
vys. narv. delat..14 no.3,1532-536 Hjv-Je 'b4. (MIR!, l'tall)
1. Laboratory of Physiology and Biochemistry, Pavlov Institute of
Physiclogy,, U.5.5.R. Acaleny of SclencG3, LenlrWrad.

KOKORIKAI E.P.
Effect of various nutritional levels on nervous processes in
animals in ontogenesis, Vop. pit. 22 no.6t66-67 N-D 163.
(MIRA 1797)
1. Ix laboratorii fiziologii i biokhimii laktateii (zav. - prof.
I.A. Baryahnikov) Institute. fiziologii imeni I.P. Pavlova'AN SM,
Leningrad.

SOV/110-59-3-7/25
AUTHOR: Abramson, YU.M. , Engineer
~okorina , L. F. Engines r
TITLE: Methods of Suppressing Radio Interference on Suburban
Electrified Railways (Metody podavleniya radiopomakh
na prigorodnykh elektrifitsirowm1kh uchaatkakh
zhelezaykh aorog)
30
IF,RIODICAL:Vestnik Blektropromyshlennaya, 1959tAlir 39 PP 31-34 (USSR)
A:BSTRACT: on suburban lines wbere sub-station mercury-are -
rectifiers are.not grid-controlled most of the radio
interference from electric railways originates in the
rolling stock. The interference is propagated and
radiated by the overhead conductor wires. Interference
in the medium wave-len6th range can travel considerable
distances but'short and ultra-short wave-length
interference is damped out quite quickly. The
characteristics of interterence originating in the main
motors control equipment and pantographs of motor-eoach
stock are brief17 described. The worst interference from.
motor-coaches is observed when they are running at high
speed or are coasting at fall speed. The suppression
Card 1/5 system for motor coaches differs from the systems that

SOV/110-59-3-7/25
W-thods of Suppressing Radio Interference on Suburban Electrified
RBIlways
have been developed for various types of electric
locomotives in that no attempt is made to suppress the
interference from a*ach indivicLual component,, rather the
whole 9',P i ment is considered as a single equivalent
source omf Irterference. Because of this suppression
systems can be made simpler and more reliable. The
equivalent circuit of a motor coach section, considered
as a source of radio interference together with
suppression circuits is given in �ig.10 Interference
can be much reduced by proper desiga of pantographog
using carbon Or carbon-metal inserts, in the antograph
and increasing the elasticity of the suspension. At the
present time the radio interferenee from motor coach
aeotions ia ouppree8ed by connecting an 1xductance
between the pantograph and the electrical equipment to
increase the high frequency impedance, whilst the source
of interference is shunted by a capacitor of sufficiently'
low high-frequency impedance over the required frequency
range. A schematic circuit diagram of the a rangement
Card 2/5 used is given"in Fig.2. The suppression cirruit is

SOV/110-59-3-7/25
Methods of SuppressIng Radio Interference on Suburban Electrified
Railways
tuned to a frequency of - about 0. 3 me/a. The inductance
re%lired is about 500 mieroHenries. The construction of-..
the inductance is described. Radio interference from
traction substations is then considered it originates
mostly in the mercury-are rectifiers Z& is at a frequency
of 300 cls and harmonies of this frequency. Very- high
interference levels are observed at frequencies of
0.16 - 0.55 Mc/a and little interference from traction
substations is observed at 1.5 Me/a. The level of
interferon" from mercury-are rectifiers, though
somewhat dependent-on the load, depends mainly:onthe
control angles at which the rectifier is working. The
level is much higher when grid control is used. In .
suburban sub-stations where grid control is not used it
suffices to use capacitative suppression on the interml,
e rthin circuits of the sub-station using condensers
iNe KB5-P-6-1. The method of connecting the capacitors
is explained. The importance of correctly locating and
Card 3/5 connecting some of the suppression equipment is discussedO,

SOV/110-59-3-7/.15
blethods of Suppressing Radio Interference on Suburban Electrified
Pailways
In November - December, 1957 measurements were made of
the effectiveness of interference suppression on a
suburban electrified railway section. Both traction
sub-stations supplying the section were providal with
capacitors for interference su ression and two motor
coach sections were provided Uth suppression equipment.
Interference levels were.-measured with instruments
types IP-12M and IP-14. Interference field levels over
a range of frequency at a distance of 10 metres from the
track when no suppression. equipment is used are given
in Fig.4 and the corresponding curves when suppression
equipment is used, in-both traction sub-stations and,
rolling stook,are given in Fig.5. In each case the
upper and lower curves correspond respectively to the
highest and lowest levels of interference measured
during the tests. It-will. be seen that suppression is
sufficiently effective to-bring the interference below
the required level over,the frequency range of
0.16 - 1.5 Mc/s which is the important range. At
Card 4/5 frequencies above 20 Mcls the interference is still

SOV/110-59-3-7/23
Methods of Suppressing Radio Interference on Suburban Electrified
BBilways
above the pemitted standard but this can only be
overcow by improving the conditions of current
collection. There are 4 figures.
Card 5/5

AYZBERG, R.Ye.; KOKORINA, L.K.; XOTS, V.G.
Buried extension of the megantiallne in the southvestern Gissar
Range, Sov. geol. 7 no,Usll4-117 N 164. (MIRA 18t2)
1. Yugo-vostochnaya Karakumskaya geologicheakaya ekspeditsiya.

MENDE, Sh.T.; KOKORINA, L,M.
Effectiveness of Azotobacter administered Jointly with mineral
fertilizero to rice. Mikrobiologiia 33 no.3s467-471 Vq-Je 164.
(MIRA 18:12)
1. Universitet, druzhby narodov imeni Patrisa Lumumby i Kuban-
skaya risovaya opytnap atantaiyao Submitted December 6.. 1963.

MXMDAMOVA. A.L.; WWSHCWA. Ye.A.; BOTSMANOV, I-V-; KOKORIKA, 0-..-P., -
YUMMNMA, O.A. 1.
Features of the oourse-of combined disorders caused by the action
of ionising radiations and burn injuries. Med.rad. 4 no.10:54-59
0 1590 ~ - (K IRA 13 1 2)
(RADIATION *lWURY exper.)
(BURNS ex"r. )

KOKORM, T.A.
Preservation time of adsorbed liquid agglutinating serums.
Lab. dolo. no.2139-43 165. (MIRA 18:1)
1. MoaVu4skiy nauchno-issledovatellskiy institut epidemiologii
i mtkrobiologii Ministerstva zdravookhraneniya HSFSR.

KOKORINIA, V. F.
Kokorina, V. F.
."The hygrosco,picity of optical glass nnd its connection with chertical
composition." State Order of Lenin Optical bmt imeni S. 1. Vavilov.
Fosomr, 1956 (Dissertation for the degree of Candidate in Chemical
Science)
Xn'izh leto ra 2
No. 25, 1956. 14oscovr

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phys!co-chemical properities of semiconducting glasses containing
tin and lead, A# M, EfImovO-V.-F.-.K2kgCIgA..,
semiconducting glasses based on yellow arsenic and selenim.
ot pro anted)
G. Ayo, V. F. Kokorina. (N s
RePort presented at the 3rd National Conference on Semiconductor Compounds,
KisU-nev, 16-21 Sept 1963

21,

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L 12121-66
ACC MRs AT6000488 SOURCE CODE- UR/oooo/66/000/000/0174/0177.
AUTHOR: Kaltorina, V.P.
ORG% Now
TITLE-. Some problems of %loAs struebare acoording to studies of oxygen-free glasset
4th
Goves oo stekloobrazooL Gostoy
SOURCE: Vee o0 h9had- ~!qv- !:Maw
1964.- Btehjoobrasnoye~sastoyaalye (Vitreous state)-;-tn* soveshchanlya. 1AMIngr4d, Rd-"
Nauka, 1965. 174-177
TOPIC TAG8.- -arsento oompound, germanium compound, selenium
glass property,
COMPOund, aintimmW compound
ABSTRAC11 - Regions and glass formation -were determined and data wete obtained on the
-bi
relation tween properties and composition for a series of systems oontaining elements of
the third, 14)urth-, and fifth subgroupe (in varioun combinations) with sultur and selenium*
Particular attention wan given to the systems As-Ge-8e,.,WGe-8e, A~28,-Ge-Be, and
As-Ge,% --'~ 5% Em, Ga.~ The thermal prWertles, density, microhardmess, spectral
characteriii1ce, orystallizability. chemical stability. viscosity, refractive Index, dispersiont
and electrlia propertfes were abidled. Other things being equal. changes In the properties of
the glasses ae determined by the hop to the number of oavalent bomb per wit volame of
the glass; Olin to illustrated by differedoes to the systems 0049 (where (k has four bodd~)
and As-Ge (ohere As has three boids). The presence of shoulders or infleations on property-
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AUTHORI SKEPTALI,N.N.t KOKORISH,N.P.0 XRASILOTIA.V. PA - 2359
TITLIs The Qrystallization of Monocz7atalline Layers of Silicon and
Germanium from the Gaseous phase. (Kristallizatsiya monokristal-
lichaskikh slo'yovkranniya i garmaniya, is gazovoy fazyp Russian).
PSRIODICALs Isvestiis Akad, Nauk SSSR, Bar. Fis., 1957, Vol 21t Hr Ip
pp 146 - 152
Received$ 4 0957 Reviewed, 5 / 1957
ABSTUOTs The present work investigates only the crystallization of silicon
an silicon and germanium on germanium. According to a general sur-
Vey of theproblem theUrrying out of the experiments.is do-
scribed. !has* experiments concerning pickling and breading of
non-oriintated and orientated silicon- and germanium crystals
disclose the real structure and the growth mechanism of these
crystals.
some conalusionst-Crystallization from the gas phase is important
-for the production at'nonacrystalline layers with assumed constants
or.yariable -composition., Especially plant p-n transitions can be
obtained in this manner. Crystallization of silicon and germanium
,at atmospheric pressure is obtained in the beat and most simple
manner by the decomposition of SiCI and GeOl in hydrogen at
4 4
high temperatures. A monocrystallin* growth of fragments of a
Card 1/2 Micron of up to 200 and a brooding surface of up to 2V5 OX12

PA - 2359
The Crystallization of Monoorystalline Layers of Silicon and Germa-
nium from the Gaseous Phase.
was obtained for germanium. The practical suitability~of the
method was.oonfirmed by the successful production of plates. These
plates are suited for tho'production of triodes of the type,
p-n-i-ps On the occasion of crystallization from the gaseous'
phase at atmospheric pressure, growth not only takes place by
means of aingle atoms or atom groups, but also by means of very
Is mall crystals,, In spite of this fact the lattices thus produced
possess a degree(of perfection which is sufficient for technical
purposes* 9 illustrations).
ASSOCIATIONs Institute for Chrystallography of the Academy of Science of the
U.S.S.R.
PRESENTED BYs
SUBMITTBDs
AVAILLBLEs Library of Congress.
Card 2/2

//, --j
49
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oil
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0 A p
oil

36795
S/137/62-/000/063/054/261
A052,4101
AUTHOR: Kokorish, N. P.
TITLE; Crystallization of germanium on silicon and of silicon on germanium
PERIODICAL: Reforativnyy zhurnal, Metallurgiya, no. 4, 1962, 50, abstract 40325
(V ab. "Rost kristallov. T. 2". Moscow, AN SSSR, 1959, 132 - 139)
TM The process of glowing Ge on Si and Si on Ge was studied. When grow-
Ing. Ge on 31,, monocrystalline Si plates with an area of 0 .3 - 1 cm.2 and 0.4 - 1 mm
thick were used as a backing. Before applying Ge the plates were ground and po-
lished and then pickled during 2 - 4 min in a boiling 3076 NaOH solution. The
application of Go was made from G`eClj, vapor by the hydrogen method at 750 r 94oOc.
It has been shown that at a temperature of 4 8000C the silicon backing is not
,overed with Ge, and the precipitation process begins at'8500C whereby an unbroken
coverage of the Si plate is not achieved. Oe precipitates in the form of black
apots mainly at the boundaries of the steps, and no unbroken and firm precipitates
have been produced. The application of Si on Ge was made bydecomposing S'C'4
with hydrogen at, 900 - 9200C, Before applying Si film the Ge plates were ground
polished with chromium oxide and pickled in H202 during 10 min. Unbroken films
Card 1/2

30539
S/564J61/003/000/010/029
ILI D207ID304
AUTHORSs Kokorish, N. and Sheftally N. N.
TITLE: Morphology of polyorystalline silicon films
SGURCEs Akademiya nank SSSR. Institut krintallografii. Rost
kristalloyt To 3f 1961# 351-356
TEXTs This and the two following papers describe the author's work
carried out in,1954 on preparing germanium and silicon films from gas
phase. The present paper deals with the morphology of Polyarystalline
silicon films prepared from gas phase by reducing SiCl with H2; the
4
purpose of the study was to fin d why electrical properties of these films
are variable. A stream of bidrogen, containing SiC14 vaporl was passed
at the rate or 5 cm/sec. throuigh-a quartz tube placed in an electrical
resistance furnace. Silicon was deposited in a portion of the quartz
tube and on objects placed in it. To study the mechanism of deposition
of silicon a graphite block of 10 x 15 x 150 mm dimensions was placed
Card 1/-3

30539
3/564/61/003/000/019/029.
Morphology of... D90?/D304
Inside the quartz tube. The block 'was somewhat larger than the region
where crystallization occurred (this region in known an the crystalliza-
tion or reaction zone). To make the films more uniform# the temperature
gradient In the quartz tube was small., The temperature distribution (T)
in the crystallization zone# the variation of the film thickness W) -.
along the graphite blockp and the mean magnitude of crystallites 6 of
which the film was composed are'all given, It was found that the film
was very thin at the beginning of the crystallization zonal where It con-
sisted of a very large number of small grainna. Both the film thickness
and the magnitude of single grain# Increased along the crystallization
zone in the direction of gas flow* Towards the end of the crystallization
zone, thia mean size of grains still Increaaedy but the film became dis-
continuous, Finallyt at the ond of the',:onep single or small groups of
large orrstalliten (up to 200 ~4 in ei ) were found instead of the film.
Sections of the film at right angles to gas flow showed that at the begin-
ning of the crystallization zone the film consisted of several layers of
fine grains. In the middle of the crystallization zone, the number of
these layers decreased. Towards the end of the zone, the film consisted
Card 2/3

30539
3/564J61/003/000/01 0/099
Morpholol3rof.oo D207/M04
of a single layer. The results obtained are discussed In terms of nuclea-
tion and of crystal growth.volocities. It is concluded that portions of
the films formed in the middle of the crystallization zone are suitable
for electrical applications because of their single-layer (effectively
monocrystalline) structure* Elmevh:r:, the films are either amorphous
or fine-grained with intergrain lay r (at the beginning of the CrYstal-
lization zone) or are discontinuous (at the end of the zone). Unidirec-
tional laininar flow of gastends to produce films whose properties vary
along their length In the crystallization zone. There are 7 figures and
4 referenaest 9 Soviet-bloc and 9 non-Soviet-bloc. The referencon to the
English-language publications read an followas R. P. Buthp 1. V. Mari-
nace and If. C. Dunlapp J. Appl. Phys., 319 6l 995-1006p 19601 1. B. go
Journalp 110. 3P 1960.
Card 3/3

30540
3/564j6l/003/000/011/099
2LI .7 00 D907/MO4
AUTHORi Kokorish N. Pe
TITLEs Features of sonocrystalline germanium film deposition
f ran gas phase
SOURCES Akademi7a neuk SSSR. Inxtitut kristallografli, Boat
kristallov, vo 3t-19619~35T-362
TEXTs The author describes a method of depositing germanium films
on germiwiumoplateme Deposition was carried out in a quartz tube heated
to 800 - 090 C. Hydrogen# carrying 0414 vapor# was passed through the
tube at the rate of 5 - 8 CM/seco Above TOOPC, the reaction
GeCl + ES
4 Ge + 4HCl produced free germanium 'which was deposited in
a region of 5 - I cm length$ known as the crystallization zone. Ger-
manium Plates placed In the crystallization zone became covered by ger-
manium filmno The author studied the position and length of the arys-
tallization zone at maxi-1- temperatures ranging from 655 to 990 0C. The
Card 1/3

3)540
3/504/61/003/000/011/029
Features of..& B907/D304
longest crystallization.zone-wax obtained at 800 - 85OcC1 and It was
found that the zone length decreased with Increase of the temperature
gradient steepness. A second crystallization zone sometimes appeared
in regions where temperature fell rapidly. Occasionally a crystallization
zone consisted of several noncontiguoux regionso To determine the quality
of films as a function of the crystallization zone temperature,, germanium
plates cut, along the.(111) plans were etched in CP-4. washed, dried and
placed in the orystalliz4tion zone in a graphite or quarta holdero The
effect of concentration of GOCI 4 vapor was also studi6dl this concen-
tration. was altered by varying the temperature of a GsC14 vaporizer
from -30 to +20 0C0 It was'found that germanium films of maximum thick-
ness were obtained on plates-at a crystallization temperature of 8OOoC,
To increase the length of the crystallization zonal the temperature dim-
tribution in it should be made uniform, and temperaturen In the zone
should be within the range 750 - 9OOuC_0 The thickness of germanium films
Increased with the duration of deposition and with the concentration of
GeC14 -vapor in hydrogenj the thickness was not greatly affected by the
Card 9/3

3D 540
3/584J61/0031000/011/029
'Features of*** D207/D304
rate of flow of hydrogen which was varied from 15 to 100 litor/houre
The author points out that- appearance of a second crystallization zone
indicates that a gradual, decrease of the rate of deposition with increase
of temporalure above 800 C and complete absence of deposition at 900oC
or higher temperatures In due to partial or complete transfer of fro4bly
formed germanium vapor outside the limits of the first crystallization
zone. The rate of this transfer increases with the increase of tempera,
ture and with a lowering of saturation because germanium particles are
then reduced and small particles are difficult to deposit. There are 9
figures*
Card 3/3

3/564JOI/003/000/019/099
D998/WO4
AUTHORSs Sheftaliq No Noo and*lokorlshp NO Po
TITIEs Reciprocal grafting of crystals of silicon and
germanium
SOURM Akadowlys nauk SSSR. Inatitut kristallogratii. Rost
kristalloirl yo 3p 19610 363-370
TEXTs This work is a continuation of previous research by No P.
Kokorish (Ref. 6s Sb. Rost kristallov, v. 2. Izd. AN SSSRI 1959l 139-
139) on the opitaxial grafting of Si and Go crystals. The theory
of epitaxial grafting was developed by Po be Dankoy (Refo 3a Trude 9-y
konferentsiL po voprosam korrozilp 119 12lg 1943) and later perfected
by Go U. Bltznakov (Ref. 4s Godishn. na, Sof. univ. Piz. khts. fsk., kA.
2. Rhimiya,, eh. Iq III 65-71l 1956); Po So Vadilo (Refo 2s Uchenp zap*
Kurskogo gove instat 40 1439 1957) and Lo Zo Collins ot &I have studied
other aspect@ of this problem-the grafting of alkali-halid6 crystals an
mica and the growth of Go crystals on hilitoo Experimental procedure.
Card 1/3

Reciprocal grafting of..*
30541
3/564/61/003/000/019/099
D928/D304
Etched crystals of as and Sit .cut along three planeep are respectively
coated with films of crystalline Si and Go by the method of N. N.
Sheftall ot al (Ref. as Izv. AN SSSRv nor. fiz.9 91p no. 1, 146-152
1957)-the reduction of the corr -esponding chloride by hydrogen. (&~ Graft-
Ing of Ge on Sit A 30~&-thick layer of 09# largely c8nainting of un-
oriented senticrystalline ag regates# precipitates at 800 C1 oriented
0
crystals appear at 840 a 100), (110) and (111) surfacesp but the coat-
ing in patcIT and peels off at higher temperatures* (b) Glafting of
Si on Get A semicryetalline layer in deposited below 900 ; close to
the melting-point of Go (P7.2") an oriented crystalline layer Is formed
with a thicimess of up to 30 ; the coating in durable and has an n-type
conductivity. The increase rn the temperature-and the consequent de-
crease in t1te nupersaturation-in believed to be responsible for the suc-
eessive foxmiation of hemi- and holo-c ga tall ine growthso The absence of
any Go precipitate on Si above 900 , howevert may be due to the de-
crease In the size of the Go particles separating out in the gas streaml
their deposition is thus impeded, and they are removed from the crystal-
lization spitere in the gas stream, The grafting of Go crystals probably
Card 2/3

30543.
3/564/61/003/000/012/029
Reciprocal grafting of**& B228/D304
requires a ireaker dogroe!of nupersaturation-than van achieved In these
,experiments.. The greater ease with which St accumulates on Go results
from the opiiration of bilateral 'tension-as compared with bilateral com.-
pression In the case of Go grafting-on the accratiolayer by the
parent crystal's orienting forcesp and so the growth of Si shifts to
the region of its higher supergaturation. In concluniont the authors
stream the need to perfect the crystallization method so that a bomo-
goneous and continuous coating of Go may be obtained on Sto There are
7 figures and 9 referencess 6 Soviet-bloc and 3 non-Soviet-bloc. The
references to the English-laugauge publications read an followas L. E#
Collins ot alp Proc. Phys. SocaqDjObj 20p 394p 825 (1959)1 F. X. Hassion
*t alp J. 11hyso Chem.j 50p 1076p 1955a
Card 3/0

20109
8/181/61/003/002/007/050
?'Y306 49'% 0 413) B102/B204
AUTHORS: Kurov, G. A., Sheftall, -N. N., and Xokorish, N. P.
TITLE: Investigation of coarse-crystalline germanium layers obtained
by pyrolysis from the gaseous phase
PERIODICALi Fizika tverdogo tela, v. 3, no. 2, 1961, 370-372
TEXTs Tbinv fine-crystalline germanium layers are characterized by a
very low resistivity,.and hay# usually p-type conductivity. According to
published, data, germani um4ayers with crystals of C45 - 1014 and more,
should dopend on the size of the crystals and on the impurities with
respect to their properties, In order to check this, the authors in
vestigated the electric proportion of 10 - 50 thick germanium 1aye;sj
which had been vaporized on quartz backings, 4 means of the so-o alled
hydrogen method. Hydrogen was conducted over liquid GeCl 4 and later into
a quartz t ube heated to 700-9000CI the reaction G~Cl 4+2H 2-Ge+4HCl took
place. 'The excess in hydrogen, the hydrogen chloride, and small
quantities of Go and GeC1 were drained off into the atmosphere, the main
4
Card 1/4

20109
8/181/61/003/002/007/0501~
Investigation of coarse-crystalline... B102/B2O4
part of the germanium crystallized on quartz. Besides quartz, also
polished graphite bac,kingswere used. All backings were previously
subjectea to vacuum heat treatment. In the case of crystallization times
of from 20 minutes to I hr, layer thicknes 809 of 3-5A and up to 50~;
were produced,. The GsCl4 used was spectrally pure. The structure the
crystallization zones was non-uniform at the beginning of the zone the
crystals were not larger than c-t 0 Ilk In the middle part 5-101G, and at
the end of the 2one they were 40-i0 several crystals atta ind up to
200 it wal found that the resistity of germanium increases ex-
pon4niia lly w th increasing size of the crystallites. The layers
crystallized onto graphite showed a dependence of the kind of conductivity
on the size of the crystallites. CrystallItes of the size of 01!t were
of p-type conductivity; at 3-5/k the thermc-emf passed from pos tive to
negative values, and the coarse-crystalline layer# beginning with 3-5,A,
had n-type conductivity (at room temperature). The layer structure on
graphite was equal to that on quartz, with the exception that the
germanium crystals on quartz, independent of the size of the crystallites,
showed p-type conductivity. Layers of thickness 10-20)o had a resist-
ivity of Q 28-35 ohm-om, which is by three orders of magnitude higher
Card 2/4

202Z9
8/181/61/003/002/007/050
Investigation of coarse-crystalline... B102/B204
than th8 Q,of the fine-orystalline layers. Heating of 2-3 hr at
500-600 0 diminished the resistivity of these layers to 25 ohmoom. Ex-
periments were also made in order to alloy the germanium layers formed
with impurities. For this purpose, spectrally pure phosphorus chloride
(donor) ard borobromide (acceptor) were used. The introduction of
phosphorus waa followed by the occurrence of n-type conductivity, which
was in all cases independent of the size of the crystalliteal boron was
analogously followed by p-type conductivity. Both kinds of impurity
decreased the resistivity o'f the coarse-orystalline layer to 5-6 ohm-cm.
The effect produced by impurities upon the kind of conductivity was
exactly the same as in the case of macroscopic monocrystals. The re 11 ulte
of the investigations show agreement with the assumption's made in Ref. 6
concerning the pyrolysis of germanium layers. The difference in
crystalline size in the crystalliiation zone is explained by the fact that.
in the mixture of H01+H2 and germanium vapor the crystallization centers
accompany the flow, deport, whereby the number of remaining crystals is
reduced, and, consequently, increased in size. That is why, at the
beginning of the crystallization zone, small crystals occurred, which were
Card 3/4

20109
B/181/61/003/002/007/050
Investigation of ooarse-crystall.ine... B102/B204
followed b' larger and larger ones, 0. Spiridonova took part in the
Measurements. There are 3 figures and 7 referencess 4 Soviet-bloc and
3 non-BovJet-bloc.
ASSOCIATIONt Inatitut kristallografii AN SSSR (Institute of Crystallo-
graphy, AS USSR)
16
-19 0
SUBMITTFDt'_~ April
Card 4/4

41099
S/058/6VO00/008/134/134
A160/A1O1
AUTHORz Kokorish, N. P.
TrIUs The crystallization of germanium on silicon and silicon on
germanium
PERIODICAL: Referativnyy zhurnal, Fizika, no. 8,1962, 31, abstract 8-4-61y
(In collection: "Rost kristallov..-T. 211. Moscow, AN SSSR, 1959,
132 139)
The conditions under which a mutual growth of germanium and sili-
con would take place were experimentally investigated'. 'Attempts to grow-on''
germanium on vilicon at temperatures of 4 8000C failed. At temperatures higher
than 8500C and up.to the smelting point of germanium (95800 an oriented but
not continuouf; growth of germanium gn silicon was obtained on plane (111). It
was possible to grow-on a continuous layer of germanium on silicon on plane
which only unstably adhered to the sublayer. Attempts to grow-on sili-
con on germantum proved to be successful only within h short range of tempera-
tures fr~m 8800C to the sublayer smelting point. The obtained silicon layers
ere continuous. Ye. 0.
Abstracter's notet Complete translation]
~
srd. 1/1

h1653
S/058/6Z/000/010/063/093
A061/A101
AMOR- Kokor1sh,_.N._P,,_
TITLE: Crystalliz~ation of germanium on silicon and of silicon on germanium
PERIODIC.AL: Ileferativnyy zhurnal, Fizika, no. 10p 1~62, 25, abstract lOE192
(In collection: "Rost krlstallov. T. 211,, Moscow, AN SSSR, 1959,
132 - 139)
TEXT: The conditions for the intergrowth of Si and Go were investigated
experimentally. The deposition of Ge on Si did not succeed at temperatures
lower than 8OVt. Above 8300C and up to the melting point of Ge an orientedp
though not continuous, deposition of Ge on Si took place in the (111) plane,
while on the (:.10) plane it w-as possible to build up on Si a Ge film being con-
tinuous though not adhering stably to the backing. The deposition of Si on Ge
succeeded only in a narrow temperature range from 8800C to the melting point of
the backing. 13ie Si films o)-+ained were of the continuous kind.
Ye. Givargizov
[Abstracteir's note: Complete translation]
C~rd 1/1

49 4 0 it r,
'lip's I
K fill
41

2-4-17100 78120
SOV/70-5-1-
29/30
AUTHORS: Kokorish, Ye." Yu.', -Shef tall, N. N.

TITLEs "Mow
~ro Ch-of,Dialodation-Free Single Crystals of.-
Germanium;' Brief. Communications
MrIstaLlografilao %.No- 11 py. 356-57., 196o.
PERIODICALt Dislocation density in artigicially grown crystals
of germanium varies-from 10.3 to 10--, per- cm if
the crystalsj growing while pulled from the melt,
are.heated additionally and. cooled off at a*very low
they can be,obtained disl.ocati6n-Pree. Using
-rate,
'
the*method suggested by W. C. Dasch, and seeds in
which the dislocation density did not exceed 103 per-,
21
cm ~ ~. -to
the authors produced several crystals, up.
50~g each, and measured their dislocation density
and other propeities.,'The results are compiled in
~Table A.
inst#uta! 6f Crysta.Uogrephy Acad. Sai.- ISM.

Growth of Dislocation-~Fr6e'-s'ingle
Crystals 7812o-
,
of Germanium. Brief Communications 80,00-5-1-29/30
Key to Table.A~ (a),Spec imen number; (b) Dislocation
,density per cm j- (c) Res istivity, ohm cm; (d) Diffusion
length, mm..
TASI A
7
0-797 1" iP4 1, t

11-708 -3
i3
Oi8 o'6
0'0
11-hlzo 3. I(P 1.0 0,6

11-873 .5-1to (1,6 0-4

E. V. Myakinenkbva and~V# K. Bichev are acknow2edged .11 -:2
for assistance, There a re 2 figures; I tablej.
and 6 references 2 U.S., 1 U.K., 1 Clermart., 1 Dutch,
1 Soviet. The U.S. and U .K. references are: W. C.
Dasch, Electr Eng., XII, 1156, 1958; A. D. Rosi,
RCA Rev., 19., 349-386; E. Billing, Proc. Roy. Soc.,
235, 37, 1956.

_5/070/60/003/003/014/01~4125
AUTHOR: Kokorish, YOOYUO
TITLE: Influence of the Peltier Effectoon the Perfection of
-als4o? Germani
Sin_g,le.Crjs, I umAQbtained by the Method of
Wi-t-fidrawing a Crystal See_d_'_KWm a Halt
PERIODICAL% Kristallografiyay 1960, Vol. 5, No. 5,
pp. 815 - 816
TEXT: When a single crystal Is grown by withdrawing a seed
arystal from a melt one of the important conditions influencing
growth is the way In which the latent heat of solidification is
removed from the liquld/solld interface. Inaduquate removal
of heat can lead to fluctuations in the rate of growth* This
produces Imperfections in the crystal. -The application of the
Peltier effect in semiconductors for this purpose was suggested
by Ioffe (Zh.tekh.fIzo, Vol.'26, 47.8, 1956). In the case of
semiconductors with n-type conductivity the absorption oir heat
in the crystallisation front'proceeds when the flow of electrons
is from the melt to the crystal, i.ed when the crystal in made
positive with respect to the melt. This is called the forward
current and a reverse current will generate heat at the interface.
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84125
A/070/60/005/005/0147*6
67
.9132/Z360
Influence of the Peltier'Effect on the Perfection of Single
Crystals of Germanium Obtained by the-Method of Withdrawing
a Crystal Seed from a Melt
The influence of a forward current on the crystallisation of
germanium was studied experimentally. Crystals of Gelvere grown
in an atmosphere of-H 2with the need crystal set along the
[11.11 direction,-a ra Ite,of.withdrawad of I mm/min and. a rate
of rotation-of the:crystal of.60 rpm. A constant current was
passed through the crystal from a -rectifier. Plates were cut
transversely from the rod-icrystal resulting at different
distances from the seed.. They.were etched in a boiling solution
of 12 g KOH and 8 g K Pe(CN) in 100 g water and the density
6
of the dislocations was counted. Longitudinal and transverse
plots of the dLslocation density distribution were made. Both
types of curves showed-miuima (at about 2.~- cm from the iseed
and atthe-axis of the 1.4 cm dia. crystal). It is concluded
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S/070/60/005/005/ul4jO17.
E132/E360
lnfluence~of the PeltierEffect on the Perfection of Single
Crystals of Germanium Obtained by the Method of Withdrawing
a Crystal Seed from a.Melt
that the density of dislocations is more uniform for these crystals
grown with a current than it would have been without a current and
that the method is of practical use.
There are 2 figures and 6 references: 1 Soviet, I German and
English.
SUBMITTED; Januaiy 26j. 196o
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86266
8/053/60/072/003/003/004
j3O19/BO56
AUTHORS: _j:okorisho Ye.,Yu. and Sheftal't NO NO
TITLE: Dislocations in Semiconductor Crystals
PiiRIODICAL; 11spekhi,fizicheskikh nauk, 1960, Vol- 72, No. 3,
.7p. 479 494
TEXT: The authors have studied the effect of dislocations upon the
electrical pro-perties of semiconductor crystals, the formation of dis-
locations in growing semiconductor crystals, and the action of disloca-
tions upon semiconduotor,instruments. In the first part, the lattice
distortion caused by dislocations and the change in the forbidden band
width oonnectel herewith is discussed. Furthermore# the space charge and
the resulting decrease of carrier mobility$ as well as the increase of
its scattering and the Increase of carrier recombination are discussed.
The results obtained by non-Soviet scientists concerning the recombina-
tion properties of dislocations, !vhich are formed in growing crystals,
are discussed, after which the interaction of dislocations with impurity
atoms Is described. Thus, it is shown that the formation of an impurity
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86266
Dislocations in Semiconductor Crystals B/053/60/072/003/003/004
B0191B056
atmosphere by dislocations leads to 0, door,eaeo of the effective carrier
trapping cross aection, and further, the Impurity atoms render the shift
of dislocations more difficult. Of the methods of visualizing dialoca-
tionog the metallographie method, the X-ray methodg and the "decoration"
method are diecussed in detail. For the first-mentioned method, the com-
position of etching agents for germanium, silicon, Ge-Si alloys and InSb
are given in a table, and the etching techniques are discussed. The
X-ray method ma);ea it possible to determine the dislocation density with
out destroying the specimen. The method of "decoration" by precipitation
of copper on ditilocational introduced by Dash, and observation in infra-
red light are deacTibed in detail, Five causes for the occurrence of
dislocations in growing crystals are discussed in detail: 1) As a -.onse-
quence of plastic deformation. 2) As a consequence of a disc-shaped soou-
mulation of vacancies in the crystal round the crystallization front, and
their subsequent destruction under the formation of a dislocation loop.
3) As a consequence of impurity trapping. 4) As a consequence of the
intergrowth of a dislocation from the inoculation. 5) As a consequence
of fluctuations of the growth rate. Finallyp the results of papeTS are
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86266
Dislocations in Semiconductor Crystals
S/053 60/072/003/003/004
B019YB,056
discussed,-which deal with"the action of dislocations upon
ter'Otics Of semiconductor instruments. the charac-
tiOn of instruments capable Of withstand It was found that for the produc-
Conductors with the lowest Possible dial ing a high Inverse voltaget semi-
There are 6 figures, ocation density must be used.
2 tables and 81 references: 12 Soviet, 3 Japanese,
5 Gorman, 2 British, I Dutchrtj Italian, and 53 US,
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3/564/61/003/000/013/099
D907/WO4
AUTHORSv Kokoright T04 Tuot and wyakinenkovat Ze V9
TITM On the problem of.de *termining dislocation density b7
chemical *etching of -germanium monoorystals
SOURCE3 Akedemiya nauk SSSR& Institut kristallograftio Rest.
kristallsvp yo Sp 1961p 371p 379
TUTs The authors determined dislocation densities on the surface
of germanium mom-ocrystals using four chemical etchants; the purpose of
the work was to throw some light on the contradictions in published re-
xults. The stobants worst CP-4 (2 - 5 =in* etching duration), potassium
,yanide solution 8g V, f - (cs),-7 , 12 g im, loo g
ferric A~ Fe cm 3 B 0
1 - 5 mino in boiling solution j iodine solution (20 cm HN03 0
16 CM 3 Up 8 cm 3 CH3COORt 0o3 mg 1 1 6 - 15 min. etching and
NOD 2 solution 10 cm3 Bro 10 cm3 112OP, 40 cm3 B20 1 3 - 20 Nino
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3/564 61/003/000/013/099
'On the problemobo D207VO4
etching Gelmanium was in the form of plates cut along (111) or (100)
planes )Irom. a monocrystal at-rigbt angles to Its growth axis. Bofors
etching, the plates were ground with M-20 (M-20) powder, chemically
polished in hot RF + HNO 3 + V90 (53till) solution for 10 - 15 sec.9
washed in doubly distilled water and dried. Etch pits were photographed
at magnifications ranging from 120 to 450o Typical etch-pit densities
for the same sample were (in cm-9 )t 9 X 10 3 for the forricyanide etchantq
6 x 10 3 for CP-40 3 x 10 3. in the iodine solutionp and 4 x 103 in the
etchant No* go 7ho highest density of dislocations was revealed by the
forricyanide otchantl it was nearly always equal to the sum of densities
obtained with CP-4 and with the iodine etchanto It In suggested that the
ferricyanide solution revealsedgo, screw and mixed dislocations. The
density of etch pits at monsio block boundaries was the same in all the
four otchants. Acknowledgments are made to N. No Sheftall for his advice
and to To R. Bichov for his help in experiments. There are 9 figures,
3 tables and 9 reforencess 9 Soviet-bloo and I non-Soviet-blot. The 4
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On the problem.,, 8/564JOI/003/ooo/013/029
D207/JD304
most recent.reterences to the Englixh-language publications,read an
followxt A. 1). Kurtz, So' A--ZhIJu and 13, L, Averbaoht Ph.Ts. Revot 1019
1285s 19581 J- 11ornstra) J. Pbys. So Chem* Solids, aj 129j, 1958; W.
Bardoley, R, L, Bellt Do 'W. Straughan, Jo Electr. A. Control, 5, lot
19581 R. Go RhOdest F6 0. Batnford, Jo Electro ab Control., 3. 403p 1957,

S/564j6l/OO3/000/015/099
AUTHORS i ..,KokorImh,':1XG'0 YU 0and Shettaltv N*. N.
TITLES On -the pr6iiem'.of graving germanium monocrystals free
of' dislo"tions''
SOURMS. Akademiya,; peak. SSSR. Institut kristallografil.' Rost
kristailovv,;*~' 3p'. 1961, 388-394
TEM. The,autho:rs don-cribe'experim'ents carried ou t In 1957-58 on.
preparing.garmanium monoMstals free,of dislo .cations. The purpose of
the work was to obtain material from which better semiconductor devices
could be made. A brief discussion of. how dislocations are formed Is
followed by details of. experimental procedure. Polycrystalline in&OU
of zone-purified germanium of > 30 ohm-em resistivity were used an the
raw material. Monocrystals were grown by Czochralski Is -technique of
Fulling from. the malt In a hydrogen atmosphere. The rate of palling was
-varied from 0.5 to 4 mm/min* A seed crystal was rotated at 30 100 rpm.
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30543
3/564j61/003/000/015/029
On the problem of... D207/WO4
most recent references to the.English-lanpage publications read as
followas W. C. Bash, J. Appl. Pbya., 29p736, 19581 P. Penningv Philips
Res. Repts, 139 70, 10581 P. D. Rosip RCA Revop 199 349, 19581 J., Go
Gresmelf Jo A, Powellf Progrema in Semiconductors, 11, 1379 London# 1057.

37967
S11371621000100510581150.
AOO6/A1O1
'AUTHOR.- 'Kokorish, Ye,,Yu.
TITLE: Tho effect of cooling conditions upon the formation of dislocations
in-garmanium,arystals
PERIODICAL; ReferativW zhurnal, Metallurglya, no. 5. 1962, 38, abstract 50253*
(V ab.',"Rost kristallov, v. 2", Moscow, AN SSSR, 1959, 12D-12
5)
TEXT- To investigate the-d1str1btition of dislocations along an.ingot, -
several Ge"single crystals -of proper conductivity were grown by the method of
pulling from the melt. Orientation of the-primer was (111], pulling rate I mm/
min, the rotation rate of.the crystal during its,growth was 60 rpm.'.After draw-
ing the Ingots from them, perpendicularly to the growth axis at different
distanceb from the primer,'plates were out to determine the density of disloca-
tions., The plates~were ground on glass with the aid of micropowder suspensions
M-10 and M-14, in orderto remove a layer of 70 - 80,A . 'After chemical p9l1sh-
ing, the specimens were etched'duriMr 3 minutes in a boiling solution of 12 g
KOH and 8 g.Kj Pe (CN)6] In.100 cm3-H2O, with subsequent washing in dtatilled
water and dryIng. The density of the etching pits to greater at the initial
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8/137/62/000/005/00/150
A0061AI01
AUTHORS: Kokorish, Ye. Yu., Myakinenkova, E. V.
oblem, of determining the density of dislocations in gerMa-
TITLE: On the pr
nium single-crystale by chemical etching
PERIODICAL: Referativnyy zhurnal, Metallurgiya, no. 5, 1962, 39-40, abstract
50260 (V sb;,"Rost kristallov; Y. 3", Moscow, AN WSR, 1961, 37-1-379'.1
~Diskus.' 501-~02)
~A comparison was.made.of the density of etching pits, revealed with
different etching agents on the same specimens along the cr7stal._-The shapea
dimensions of-the etching pits were determined. Thq following etqhing agents
were used: 1) CP-4 (SR-4) composed of HU03 (25 onP) + HF (15 clw~) + CH3C0W
(15 cm3) + Br; etching-time was 2-5 min- 2) ferrous cyanide composed pf K3
(Pe(CH)61(89) + XOH (12 g) + H20 (100 C;3) with I - 5 min etching time in a
boil solution; 3) iodine composed of HN03 (20 c~3) HF (16 cm3) + CH3COOH
(8 cNg + 1 (0-3 mg) with 6 - 15 min etchin time and 4) No. 2, composed of
j1p (lo cm3) + H;p~ (10 GM3) + Hoo (40 cA wgith* 3 - 10 min etching time. Prior
to etchingthe specimen surface wasground on.glass with micropowder M-20,
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