SCIENTIFIC ABSTRACT GUBANOV, A.I. - GUBANOV, E.P.

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December 31, 1967
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SCIENTIFIC ABSTRACT
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GUBANOV, A.I.; KRIVKO, N.I.; REYNOV, N.M. Experimental determination of polaron mass in cuprous oxide. Zhur. eksp,i teor,fise 38 no*2:341-344 F 160. (KM 14:5) 1. Leningradskiy fisiko-tekbnicheakiy institut, Akademil nauk SSSR. (copper oxide) (Semiconductors) GUBANOV, A.I. e__ - --- r . Bam theory of partially ordered system. Fiz.tver.tela 3 no*7:2154-2159 J1 161. (MMA 14:8) 1. Fikiko-tekhnicheakiy institut AN SSSR imeni A.F.Ioffel, Leningrade tsyntams (chemintry)) (Energy-band theory of solids) P72084 s/lal/61/003/008/014/034 B102/B202 AUTHOR: Gubanov, A. I. --------------- TITLE: Theory of impurity levels in amorphous semiconductors PARIODICALs Fizika tverdogo tela, v. 3, no. 8, 1961, 2336 - 2341 TEM B. T. Kolomiyets et al. studied the effect of impurities on the conductivity of vitreous semiconductors (As2 Se 3-As2Te3). They-found that in vitreous state, d remains unaffected while in crystalline state it is considerably influenced. In the vitreous state lnd - f(l/T) does not show the characteristic salient point of impurity semiconductors. I. Z. Fisher (FTT, 1, 192, 1959) attempted to explain theoretically the lack of impurity conductivity in amorphous bodf-es. His concepts are, however, refuted in the present paper. The author assumes that the lack of an impurity conductivity is related to a considerable shift of the impurity levels, especially to a lowering of the donor level. This level shift can be explained by various hypotheses. One of them is analyzed here; it is the assumption that the impurity atoms in the amorphous body have about the same potential as in the crystal, that the locallevels on Card 1/3 .- I A Theory of impurity... 97284 B/181/61/003/008/014/034 B102/B202 the background of the quasiperiodic potential occupy, however, another position than in the crystal. A theoretical study shows that this hypothesis is impractical. The author then discusses a second hypothesis in which the following assumption is mades In the amorphous body the impurity atoms occupy about the same position as in a crystal, however, they cause a rearrangement of the surrounding atoms such that the donor levels approach the filled band, the acceptor levels approach the con- duQtion band, The levels of the interstitial atoms were calculated by the method of the effective mass (according to H. Reiss). The method of the strongly bound electrons (F. E. Williams) leads to the same results In an amorphous body, the impurity levels lie considerably lower. If such an atom acts as donor in the crystal it exerts the same function also in the amorphous body. Here, this lowering of the level is considerably stronger than the heightening with unchanged potential in the hypothesis discussed first. This hypothesis seems to be suitable to explain the non-existence of impurity conductivity in vitreous semiconductors. A third hypothesis, which is basically possibleand according to which the impurity atoms in the amorphous body have other positions than in the crystal, is not specially dealt with, since it cannot iully explain the Card 2/3 97284 S/181/61/003/008/014/034 Theory of impurity... B102/B202 effect. I. M. Lifshits and N. D. Potekhina are mentioned. There are 15 referencess 12 Soviet-bloc and 3 non-Soviet-bloo. The three refer- ences'to English-language publications read as followai 0. T. Koster and J. C. Slater. Phys. Rev., 21, 1167, 19541 P. E. Williams. J. Chem. Phys., i1, 457, 19511 H. Reiss. J. Chem. Phys., Zj, 681, 1956. ASSOCIATIONs Fiziko-tekhnicheskiy institut im. A. F. Ioffe AN SSSR Leningrad (Institute of Physics and Technology imeni A. F. Ioffe AS USSR, Leningrad) SUBMITTEDs February 6,. 1961 (initially) and March ~, 1961 (after revision) Pard 3/3 2 3 B104/'B205 AUTHORSt Gubanov, A. I. and Pushkarev, 0. Ye. TITLE. The Hartmann problem in magnetoplasmadynamics PERIODICAL: Zhurnal tekhnicheakoy fiziki, V.-31, no. 5, 1961, 621-623 TEXT: In magne~ohydrocVnami'cs, ' Hartian''n et al. (Mat. -fys. Medd. t a, - 6 and 7, 1937) studied the motion of plasma between tw'o immobile plates. The plasma was assumed to have isotropic vi scosity. The present authors have studied the case where the'magnetic field is directed along the x-axis and perpendicular to.the plates. A similar investigation has been carried out by Gubanov et al. (ZhTP,.Xxv, 1053, 196o). The symbols and equations introduced in this paper are also used here. These equations differ from those presented here: Card 1/4 The Hartmann pr4lem in... S/057/91/103 1 /005/0 17/ B104/B205 H, d? '1b' d2vo -#-- (Ve Q HO -I. HI at -; qlb,l T:, 'T' He E*-1L4 T:;-.&T -rx only in the terms with dp/dx (the x-axis is directed parallel to the, pressure gradient). In addition, ri 1 T1H0/H - X, is valid. The boundary conditions for the veloLtieq aret V. a v y -.0 at z - 0 and z - h (2); h is *the spacing of the plates. Two cases are to be distinguished; 1) E and E are given; if the plates are conducting, E - E = 0. x Y x y 2) Hx 7 .HY - 0 at z - 0 and z - h. From the system *(1) and (2).the following solutions are obtained for the first case: Card 2/4. ilj~i f:AV 'till! t41!1,MjM;r!W V. The Hartmann problem in... 3104/ / 32C5 ch ki h V,-#--IV,, (VO t (3) chk dp as .O d E.. 4) E,, , 2 2 dX x H 0 'HO In analogy to the previous,papel-, the following expression is then obtained: ch*kl 1 (.9 - -7) H s, X - -#- i * (5) h dx chk, wherefrom it follows that H. W, = (H. -#- iH,),...* f U. -4- ij,) dr (H. iH,),-, -+- -4-2h k, A k, d p 41m f0 L z. (6) 02 r:;-Xt(v-o h HO dX k, ch k, -y By eliminating R X and E from.(3), (4)?.and (6), the solutions 39 Card 3 4 22786 5t'057111611`003, 0 1 T/ 020 The Hartmann pro8lem in... B104/B205 d A (I m ch kj.-y - ahf~ 2 I 'U JV 2 sh.ki A4% ph kj ('-A (z (8) sh ki are obtained for the.sooond case. If the magpetic field is parallel to the plAtes, the.ilasma will move like in hydrbdynamice but with varying viscosity. If the direction of the magnetic field and the direct,ion of the moving plasma form.& iight angle, a' pressure gradient will appear. Yu P. Lun1kin is thanked for discussions. Thdre are 3 referencess 2 ~oviet-bloc and 1 non-Boviet-bloc. ASSOCIATIONi Fiziko-tekhhicheskiy institut im. A. F. Ioffe AN SSSR Leningrad (Institute of.Physics a~d Technology imeni A. F. loffe, AS USSR, Leningrad) SUBMITTED: December 7, 1960 Card 4/4 GHEVfCHEWV, A.D. 0 2T99-A-A-I-- Precise formillstion of the kinetic theory of polywr strength* Bond and cohesive erwra in po2ymrs. FA"rt .presented at the 13th Conference on High-mlecular compowds, mumov, 8-n oct 62 41 tj 1. S' s/ial/062/064/004/01 3/042 B 104/~ 108 m-.ro~~S: GUI,anoV, A. 1., and Chevychelov, D. T 1'2 Tlheory o-f the breaking streneth of oo1i:l polyners P""11TODICAL: Fizila tverdo,--o tela, v. 4, no. 4, 1962, 928 - 933 TE'XT: This is a critical comment of T-. Buechelc; theory (J. Appl. Phys., 28, 764, Ic)57)- 'Phe tneoretical strength of a polymc~~ 13 calculated on Tne asswi-lption that the botential energy of interuczion between neighboring ato-is of polymer chains ~ar, be descri.bed by a 'o.orse func '.ion U(r) = D, exp(-2(r-R)/a) - 2exp(-(r-R)/a)~. D is the maxijxam d,~~Fth of tht Potential -.-,,ell; a chara~te-,1".--~z the. carvatu-re ' - L' of U(r) near its minimam, &,nd E is the equi21br.1u.a interatomic distance. For the time -until a sample breaks under a Given load, the following relaLion is obtained: ln(';-/z D/kT - In exp (acre/kTN)(1 + ln(2DN/aa' 1j , vihlere 11A), 0 0 Card 1/2 S/181/62/004/0011/0 13/042 Theory of the breakin.- strength ... B'1CM,/'_q1O8 is the toz;a! number of chains pa.-3sin~~ throu,-h unit cross section. 1, In the case of polyvinyl chloride, polypropylenta, and polvethylene, the calculated *tr,:ncth i.s conoiderc-bly Ivreater than the experimental one. Canrone is an excent~_ on. These results diverge from cixpc'ri-.ionta1 data less than Bueche's results. Explanat ion : (1) Since pol%mer chains have finite dimensions,the effeclVive value of 11 is influenced thereby; (2) irro!.7-,Ala_~ity viLs considt_~!red throu~,h the factor 1/3 in the calcul%tion. Viis factor may be 6 -he sa--:T)le displays inhomoCeneities. lower in an exact calculation. '3) A fluctuation mechanism. is assui,.ied to be the principal cause of polymer destruction . T n these calculations, intermolecular forres were assumed ~ U to be small. S. Zhurkov, Corresponding 1sember AS USS'R, is thanked for having su:~gested the subject and for discussions. There are fioures and 1 table. A S S 0 C 1j.', T; 1 ON :Fiziko-teknnicheskiy institut im. A. z. 1--offle ZI: SSSR Leninrrad (Physicotechnical Institute imeni A. F. Ioffe~ AS USSR, Lenine;rad) SUL4;'."ITT-D: 11ovember 23, 1961 Card 2/2 S/181/62/004/oo6/020/051 B104/B112 7 AUTHOR: Gubanov, A: 1. TITLE: Electron spectrum in one- and three-dimensional models of a liquid PERIODICAL: Fizika tverdogo tela, v- 4, no. 6, 1962, 1510-1513 TEXT: In a previous paper (FTT, 3, 2164, 1961), the author derived the system r E= E, E, -t-- 62W kki IC.k'l'(IUkk'l'- urkuw) A=j E- Ek W~ gc:klukkl B= 'r- (4) c:. - -5 1 .4, ). k, (C.N Card 1/2 jr Akr 'Saraff-0 Fuiz -rP.,qP6LAr10A) 3/181/62/004/006/020 /051 Electron spectrum in... B104/BJ12 for the n-th energy state of a disordered system,using the band theory of liquid and amorphous conductors. Cnk are the expansion coefficients of the *ave functions of the n-th state; 0 is the energy of the n-th eigenstate of 1~ a crystal; F_ is a parameter characterizing the degree of short-range perturbation; w and U are matrix elements of the perturbation operators. kk ~k -a.4.~_n4ng of the allowed bands in one- and three-dimensional liauids is s--udied from (3). In a one-dimensional liquid, the mean broadening E of the allowed band is a linear function of E. In a three-dimensional liquid, Z is proportional to e2. For small E, the band broadening in a three-dimensional liquid is considerably smaller than in a one-dimensional liquid. The model of a dimensional liquid cannot be used for investigating a three-dimensional body. ASSOCIATION:. Fiziko-tekhnioheskiy institut im. A. P. Ioffe AN SSSR Leningrad (Physicotechnical Institute imeni A. F. Ioffe AS USSR, Leningrad) SUBMITTED: January 25, 1962 Card 2/2 5/181/62/004/010/036/063 B102/B112 AUrHORt Gubanov, A. I. TITLEs Local fluctuation levels in amorphous semiconductors PERIODICAL& Fizika tverdogo tela, v. 41, no. 10, 1962, 28T3 - 2879 TEM Earlier (ZhETF, 26, 139, 1954; 28, 401, 1955; FTT, 2, 60, 1960; 3, 2164, 1961), the author showed that als6 amorphous bodies and liquids may have an electronic band structure. Here it is shown that these energy bands also have local levels. The occurrence of such levels is attributed to atom fluctuations and is dealt with theoretically. These "fluctuation&l local levels" are studied in the same way Thai Koster and Slater (Phys. Rev. 95, 11679 1954) studied the impurity-levels of crystals (see Gubanovt --.FTT, 3, 2336, 1961). If the perturbing potential acts only on a small number z of localized wave functions Ti the enorgy of the local level is determined by. I , . A L., V,, 4.,j 09 as q 7-= It z; V,1= Los dU (2) -E--- Y,- W. Card 1/5 3/101/62/004/010/036/063 Local fluctuation levels... B102/B112 G is the number of cello in the basic region, E or El(-k) the energy of p levels of tKe unperturbed system, a ps are the eipansion coefficients of the wave function y with respect to the local upetions Ti, and 11 is the fp volume of the Brillouin zone., Eq. (1) is studiqd-only for two extreme ca,sest semiconductors with's purely ionic bond and semiconductors with a TiFely covalent bond. In the former case Ar, > b -!o _~o _e m -ber? 4van- er -'W (5) r0 QA3 (7) 1 Vil I > 8WM"19 with E