SCIENTIFIC ABSTRACT GRINBERG, A.A. - GRINBERG, A.A.

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CIA-RDP86-00513R000516830003-5
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December 31, 1967
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SCIENTIFIC ABSTRACT
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SOIV/106-13-2-0/1~-,-~/~ AIUTHORs Grinberg, A. A. TITLEt On the Theory of the Irmaftir .. Characteristic of a Trjcjde,.~- Transistof , " (K teorii perekhodnoy kharakteristiki polupro- vodnikovogo trioda) PERIODICALt Radiotekhnikap 1958, Vol- 13, Nr 20 PP- 51 - 53 (USSR) Receiveds April 25, 1958 ABSTRACTs Here the %tromftr i characteristict; of a trioft traIjIst6r: under current control and with different wiring schemes are obtained. The analytical form of the trwWfOir-i characteristic gives the possibility to consider the collector capacity and the load resistance of the triode. At first the transition cha- racteristic of a triode in a scheme with a grounded and our- rent-controlled basis is investigated. Laplace's representation of the current ',tromfek - i characteristic g(t) . . . equation (1 obtained in Reference 1 is put down# which corresponds to the deltaform [S(t) emitter current. The consideration of the collector capacily C c and the finite load resistance Rload Card 1/2 with the help of the equivalent scheme with small signals for SOV/103-13-2-8/1.91-If-I - On the Theory of the ?zWi6ftr . Characteristics of a Tridde Tzwsisior ~.' " the collector circuit leads to equation (7), By z-pplication of the multiplication theorem of operation calculus the UNts". f6r, characteristic G(t) of the triode ... equation (6), which takes the influence of the collector capacity and of I~hc load resistance into considerationt is obtained. G(t) is t. exact solution of the problem investigated by A. V. Ayrape.- ymaAs and S. M, Ryvkin (Reference 5). There are 5 references, 5 of which are Soviet. SUBMITTEN March 25P 1957 Card 2/2 GRMM, A.A. Oalculation of transients In semiconductor triodes. Fixetverstela 1 no.1:31-43 Ja 059* WRA 12:4) (Transistors) (Transients (219otrialty)) C _~ '/' -/ 0 67390 240)) e4(,6,Y SOV/181-1-9-6/31 AUTHORSs Ryvkin, S, M., Ivanov. Yu. ~L. , Grinber,,z, A. A ~, Novlkov, Potekhina, N. D. TITLE; A New Longitudinal RgEnetcqtriction-Lffect,and -Itz .,pplic- ation to the Determination of the Ratio Between the Con- centrations of Heavy and Light Holes PERIODICALt Fizika tverdogo tela, 1959, Vol 1, Nr 9, PP 1572 - 1575 ("r'SR) ABSTRACT: When investigating the diffusion of the nonequilibrium carrier in the magnetic field, the appearance of electrical fields is usually studied (e.g. the photomagnetic Kikoin-Noskov effect). The present paper offers the results obtained from nn investig- ation of the concentration distribution of the minority carrier in the magnetic field, and in particular, the results of an investigation of the longitudinal magnetostriction effect in the longitudinal magnetic field. A plane-parallel nemicon- duotor plate was arranged perpendicularly to a homogenous magnetic field. On the plate, a point light probe exactly faced a point collector. The infected nonequilibrium carriern diffused through the plate and the collector determined the Card 1/5 concentration of the minority carrier. The concentration .' I-- 67390 A New-Longitudinal Magnetostriction Effe%.t and Its* SOVI/181-1-9-8/31 Application to the,Determination of the Ratio Between the Concentrations of Heavy and Light Holes At recorded thereby increased with R. Figure 1 shows a schematic reprei6ptation of the measuring arrangement, a'description of which is given. Theoretically, one obtains for the concentration of thi injected carrier on the z-axis _*. 1 0_511D .(H11z).-A n (r is the electron-hole pair H -.21D z I where i production rate,*1 D the diffusion length, D n the electron diffusion coefficient. Figure 2 shows the result obtained by an attempt of experimentally verifying this formula for electron injection into hole-type germanium. The beat agree- ment in obtained with a microscopic drift mobility of the electrons Mo , 3650 cm 2/vesed. When investigating the hole / n diffusion in n-type ermanium) a considerable divergence between theory and exper4ment is observed, which, however, Card 2/3 can be explained when taking into aebount the existence of 67390 A Now Longitudinal Magnetostriotion Effect and Its SOV/181-1-9-8/31 Application to the Determination of the Ratio Between the Concentrations of Heavy and Light Holes heavy and light holes. The theoretical curve drawn for 4%is case nicely describes the experimental results. The ron- centration ratio between heavy and light holes is dsduced from measuring results as being 57; this value approaches the result (50-0) obtained by an other way (Ref 1). Therp are 2 figures and 2 references. SUBUITTEDi March 7, 1959 Card 3/3 S/181/60/002/01/29/035 .2 B008/BO14 AUTHORs Grinberg, A. A. Vk TITLEt Theory of the Aniaotropic Photomagnetic Effec in Germanium PERIODICAM Fizika tverdogo tela, 1960, Vol. 2, No. 1, pp. 153-156 TEXTs The article under review deals with the photomagnetic effect dis- covered and studied by I. K. Kikoin and Yu. A. Bykovskiy (Refs. 1-3). In contrast to the ordinary photomagnetic effect, the sign of this effect does not change with changing direction of the magnetic field. It is described as follows: An electric field is generated in an illuminated sample located in a magnetic field that forms a certain angle cc with the illuminated surface. This field is generated not only in the directicn co rres onding to the ordinary photomagnetic effect (according to Kikoin Noskov5 but also in a direction perpendicular to the former. Studies of the even (quadratic) effect on germanium have shown (Ref. 3) that the formula holding for the ordinary photomagnetic effect is not applicable to anisotropic samples. Here, the effect is non-zero even at oc - 0. Card 1/3 Theory of the Anisotropic Photomagnetic S/161/60/002/01/29/035 Effect in Germanium BOOB/BO14 The author suggests another mechanism for the development of this effect. It is related to the anisotropic nature of the conductivity of the sample, which arises in consequence of the magnetic field. When the sample is illuminated in the presence of a magnetic field, the direction of the ambipolar current flux of the p-n pairs deviates from the direction of the arising concentration gradient. This is ascribed to the anisotropic nature of conductivity. For this reason, there is a non-zero component of the ambipolar flux In the direction of the magnetic field, though the magnetic field lies in a plane with the illuminated surface of the sample. This component is not caused by the "repeated" deviation but by the effect of the change in resistivity within the magnetic field. The authors believe that this mechanism offers an explanation of the even anisotropic photomagnetic effect observed by Kikoin and Bykovskiy in n-type germanium. The illuminated surface of the latter coincides with the (111) plane. The calculation of this effect is -iven. The author thanks S. M. Ryvkin and S. R. Novikov for their discussion of the article under review. There are 1 figure and 7 references, 5 of which are Soviet. Card 2/3 Theory of the Anisotropic Photomagnetic Effect S/18 60/002/01/29/035 in Germanium B006XB014 ASSOCIATIONt Leningradskiy fiziko-tekhnicheakiy inatitut AN SSSR ,(Leningrad Institute of Physics and Technology of the SUBMITTED: May 26, 1959 q/ Card 3/3 S/181/60/002/05/09/041 B008/B058 AUTHOR: GrinbeaL_L A. TITLE: Photomagnetio Effect in Isotropic Semiconductors and Its Application for the Measurement of the Lifetime of Minority Carriers..0 PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 5, pp. 836-847 TEXT: An equation for the current, with regard to two types of carrier with equal signs (holes), is derived from the kinetic equation-with ar- bitrary dependence of the relaxation time on the energy. The photocurrent and the photomagnetio emf are determined for arbitrary magnetic fields by means of this equation within the range of the application of the solution of the classical equation of motion. The photomagnetic method of measuring the lifetime is investigated next, and equations for the determination of the lifetime on transitions to strong fields are derived* Moreover, a sur- vey on studies carried out in this field is given in the paper, and the following persons are mentioned: B. Ya. Moyzhes, Yu. N. Obraztsov, I. K. Kikoing Yu. A. Dykovskiy, A. G. Mironov, K. B. Tolpygo, G. Ye. Pikus, and A. I. Aneellm. Fig. I showe the experimental setup for the measuring of Card 1/2 tA Photomagnetio Effect In Isotropic Semiconductors S/161/60/002/05/09/041 and Its Application for the Measurement of the BOOO/BO58 Lifetime of Minority Carriers thq,photomamnotoolootrio effect (Kikoin-Noskov effect). Fig.2 shows the difference between the regular actual lifetime and that computed from for-- mula (31) for various magnetic field strengths. The magnetic field extends along the Z-axis, and the exposed surface coincides with the area (Xz). The exposure is accomplished with light with a depth of penetration much smaller than the diffusion length of the disequilibrated carrier. Presuming that the sample be long as compared to its thickness, and that E y does therefore not depend on x, it is found, according to the potential of the electric field, that E.xdoes not depend on y. The author finally expresses hie gratitude to S. M. Ryvkin, Doctor of Physical and Mathematical Scienceo. There are 2 figures and 35 references: 16 Soviet and 19 English. ASSOCIATION: Fiziko-tekhnicheskiy institut AN SSSR, Leningrad (Institute of Physics and Tec-hnolo'gy AS USSR Leningrad SUBMITTED: August 5, 1959 Card 2/2 ~/c A; Ili--lc 6 5/181/60/002/007/001/042 B006/BO70 AUTHOR; Grinberg, A. A. TITLE: A Theory of the Photomagnetic Effect in Anisotropic Cubic Crystals PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 7, pp. 1361-1367 TEXT: The purpose of this work was to develop a theory of the photo- magnetic affect of anisotropic cubic crystals in weak magnetic fields for an arbitrary orientation of the crystal. The first theory of this effect, a macroscopic theory, is by Yu. M. Kagan and Ya. A. Smorodinskiy (Ref. 14)- It obtains the angular dependence of the anisotropic photo- magnetic effect (the so-called Kikoin-Bykovskiy effect) in an approximately correct form. For the determination of the magnitude of the effect, it uses a phenomenological coefficient, whi-h, however, can be calculated on the basis of the microscopic theory developed in the present wcrk. First of all, equations are set up which determine the electric fields that appear on irradiating a plane-parallel plate of a semi- Card 1/3 A Theory of the Photomagnetic Effect in S/181/60/002/007/001/042 Anisotrople Cubic Crystals B006/BO70 conductor placed in a magnetic field. The geometric relations of the experiments are shown in Fig. 1. These equation3 are then solved on the supposition that the dimensions of the sample are large compared to the diffusion length of the minority carriers (holes). Explicit expressions are given for the components of the electric field and the concentration of the minority carriers. These are valid for an arbitrary orientation of the crystal to the magnetic field. These re3ults are then applied to some special cases. One application is made to the irradiation of the (111) plane; Fig. 2 shows the dependence of the field component E2 on the angle a0 obtained rrom formula (23), and the experimental angular dependence according to Rer. 3, the angle ao giving the direction of the magnetic field relative to the sample. Fig. 3 shows E2 as funotion of Y for a0 - 450 and H . 24vOOO oersteds, q characterizing the directions of the coordinate axes with respeot to the (111] direction. The experi- mental angular dependence (Fig. 3a) is again compared with the theoretical value (Fig. 5b). The other application of the theory is made to the case of the irradiation of the (110) plane, that is,Gx5 lies in the LIIO direction. Fig. 4 shows E2(T) at ao , 450. The theory of Card 215 A Theory of the Photomagnetic Effect in S/181/60/002/007/001/042 Anisotropic Cubic Crystals B006/BO7O anisotropy of the photomagnetio effect developed here is in good agreement with the experimental results. There are 4 figures and 14 references: 11 Soviet and 3 US. ASSOCIATION: Fiziko-tekhnicheakiy Institut AN SSSR Leningrad (Institute of Physics and Technology of the AS USSR? Leningrad) SUBMITTED: Card 313 December 21, 1959 825h4 S/181/60/002/007/024/042 00 B006/BO6O AUTHORS: Grinberg, A. Strokan, N. B. TITLE: Influence of the Rate of SurfacXecombination and of the Absorption Coefficient on the T ansient Responses of Photo- diodee PERIODICAL: Fizika tverdogo tela, 1960, Vol. 2, No. 7, PP-1536-1541 TEXT: Photodiodei5are to this day known as the Sa~te~rs&f light signals or radiation pulses to electrio pulses with the least inertia; the study of the influence of various parameters on their inertia has a great practi.. oal importance. The present paper is a contribution to this problem. The authors obtained, theoretically, an expression for the transient response of a photodiode for arbitrary values of the surface recombination rate S and of the absorption coefficient k; the importance of considering finite S_ and k values Is discussed in the introduction. As the initial step for the formulation of the problem (which is treated as a one-dimensional one), the authors used a schematic representation of a photodiode as is shown by Fig. 1. With large k values, e.g., in the conversitn of a step pulse Card 1/3 825bb Influence of the Rate of Surface Recombination B/181/60/002/007/024/042 and of the Absorption Coefficient on the Transient B006/BO60 Responses of Photodiodes (.-r- pulse) by a photodiode, distortions of two types occur: the pulse experiences a shift with time and a modification of the form. 9, (delay time) denotes the time from the beginning of excitation to the moment at which the current has attained 0.1 of Its stationary value 1 11 t; 02denotes the duration of the current growth in the interval I Jo'll 0-71 . The authors wanted to determine YkOS) and g2 (k,S), and to find Ij-(t) for a .I- -excitation pulse. First, the transient response is found for a 6 pulse, by which it is possible to determine I(t) by means of Duhamel's formula for various exciting pulse shapes. Formulas (5) and (9) are obtained for I,(t) and by means of them for some special cases the transient responses are calculated for 3.0 and shown In Fig. 2. I_r(t) is given by formula (10). By means of these formulas, 0 land 0 2 can be determined as functions of kv; Figs. 3 and 4 show these for various 3 values. (w characterizes the distance between the irradiated diode surface and p-n junction, cf. Fig.1). 9, shows the largest change in the transition range of uniform generation Card 2/3 Influence of the Rate of Surface Recombination and of the Absorption Coefficient on the Transient Responses of Photodiodes 825hit S/181~60/002/007/024/042 B006/BO60 (km > 1). In the range of kw cro. > Cl. > lift > jN06N > (SCN)o. The trommitim tempt we 223% 21so. 173% 1061. W. in load IT, -00 17 Is am OwwAW deem pn. If 11,11INHOLICU 0: 1# lPt(NN6)ollomW ( OA in Milk. tb"V 1..q I.W.- e* It "W'Ifter pnxtdgb wkbf"* ~47N, AOM 41111 lj(Nll#)#P(4. lPt(Nl4h& I- SNH#. 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