SCIENTIFIC ABSTRACT GORYUNOVA, N.A. - GORYUNOVA, S.V.

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• Collection: Scientific Abstracts
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• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: March 13, 2001
• Sequence Number: 14
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

GORYUNOVA, N. A.
I'Ternary compounds of A2B4D5 afid their properties."
2
report-preBented.at the Gordon Research Conf on Chemistry & ~Letallurgy of Semi-
cohductors, Tilton, N.H-., 24-28 Kug 64.
Physico-Technical Inst, Leningrad.

SIVARTSEV, Yuriy Vasillyevich; VALOV, Yuriy Alekssandro~iich:
BORSHCIIEVSKIY, Aleksandr Semenovich; 11.114.1
doktor khim. nauk, prof., red.; NASLETX)II, D.N., doktor
fiz.-mat. nauk prof.,, red.
(Diamond-like somicorductors with high meltin't" point]
Tugoplavkie ahazopodobnyo poluprovodniki. Vo..lkva, VAal-
lurgiia, 1964. 207 p. (MIRA, 36:11)

NASLELOV, D.N., prof., red.;_QQ_P).=OYAj, N.A.p prof., red.;
GITSU, D.V., kand. fiz. mat. naux, red LANGE, V.N.,,
kand. fiz.-mat. neuk, red.; RADAUTSAN, S.I., kand. fiz.-
matem. nauk,,,red.
[Research on semiconductors; nev semiconductor materials]
Issledovaniia po poluprovodnikam; novye poluprovodnikovye
materialy. Kishinev, Kartia Moldoveniaske, 1964. 173 p.
(MIRA 17:5)
1, Akademiya nauk Moldsvskoy S31. Institut fiziki i matema-
tiki.

BOOK EXPLOITATION S/
AH4007951
.Goryunova. Nina Aleksandrovna
Chemistry of diamondlike semiconductors (Khimiya almazopodobny*kh
poluprovodnikov) (Leningrad) Izd-vo Leningr. univ. 1963. 221 p.
illus., biblic. Errsts.slip inserted. 4500 copies printed. Spon-
soring Agency: Leningradskiy ordens LenLna gosudarstvennyky
universitet imeni A. A. Zhdanovas,
TOPIC TAGS: semiconductor, diamondlike semiconductor, elemental
semiconductor, isovalent binary compound, Isovalent solid solution,
ternary compound, complex compound, heterovalent compound, tetra-
hedral phase, diamond structure, lattice imperfection, lattice
vacancy, interstitial occupancy
PURPOSE AND COVERAGEi This monograph is intended for scientists and
aspirants in chemistry or physical chemistry who are working in
semiconductor research and for advanced students specializing in
theoretical and applied electronics and the chemistry of semi-
conductors. A systematic review of experimental material on the
structure and physicochemical properties of all presently known
':.-Card 1/3

A114007951
diamondlike semiconductors is presented. Elemental semiconductors,
binary, ternary, and more complex compounds with tetrahedral struc-
tures are covered. Basic ideas are outlined on the chemical in-
vestigation of prospective semiconductors, The book includes sec-
tions from the lectures on the chemistry of semiconductors delivered
by the author at the chemical faculty of Leningrad University,
(1958-1961). Thanks are expressed to No K. Takhtareva, A. A.
Vaypolin, Ye.,V. Tavetkova, V. 1. Sokolov&, L. V..Kradinova, E. Yu.
Lubenska, and 1. 1. Ty*china of the Laboratoriya poluprovodnikov
(Semiconductor Laboratory) at the Fiziko-tekhnicheakiy institut im.
A. F. loffe (Physicotechnical Inatitu.te)o
TABLE OF CONTENTS [Abridged):
Foreword 3
Introduction 5
Ch. 1. Formation of diamondlike substances 9
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.-AM4007951
'Ch. 11. Physicochemical and electrical properties of diamondlike
semiconductors -- 57
Section A. Elemental semiconductors 57
Section D. Binary compounds --.80
Section C. Isovalent solid solutions 119
Section D. Ternary and more complex heterovalent phases -- 134
Section-E. Tetrahedral phaaeswith lattice vacancies -- 146
Section F. Tetrahedral phases with Interstitial occupancy -- 168
.,~Ch. 111. Evolution mechanism of'the propert ies of the diamandlike
semiconductors 184
-Conclusion 202
_7
~.:-References 267
SUB CODE** CH MA SUBMITTEDt-10Dec6Z NO REP SOV: 237
:OTHER: 356 DATE ACQs 29Jul63

Ea -1 000, 012 B04WB"W-3
11ANWA4 4- ~741
539.2573, 541 - 412
SUMRC F Ref . zh. ElektronikcaIyeye primeneniye. Svod,-qy tom, Abs. 12B15
AUTHOR N. As,
TITLE: Defeo di4=-ond-like seriigop~scpor-",t qy, ~t"~
CITED SOURCE! 5b-. iaqled.opo-poluprovodnika-m. Kishinev, Kartya Ifoldoven-yaskep
TOPIC TAGS, diamond like $emiamdqotor, defect somiconductor
I TRA' NSUTION-.i- A rvqew,of -is presented of bina
r
defect d'Lamond-lil:e semiconductors and derived solid --olutiorip. aml (nmplex
1, ft~ ze-A
=-d in slxme cases in tfie-i-tmoaphera of spectrally pure argon. It is roted that
the method of cheriiaal transport reactions is vory. promising fnr grcvincr defect-
com~Iouild,j, particularly thaeo with a U& molting poinL. Properties of type
1~ 'V ::ompounds are con8idered, an well as pseudo-binaxy compounds of
Card -1

~L.
- .1:; 1-_:.-1 - F~
SUB COES: EC
ENCLi 00

J
c
SOURCE: ANMISSR. bmt1tutfizikilmatematild. Isoledovarti-vapo-poluprovodnikaxn;
aolili*ye poluprovodalkovy*ye materialy* (Smniconductor research; ncru semiconductor
rnatarials), Kishinev, Goo. izd-vo Kartya Moldoveri_vae-ke, 1064, 44-C-6
TOPIC TAGS., ternM solid soluUon. semiconductor, cuprous germ anfun i gelenide. r.-uprous
germa-ailim 61 L 1
.ULj!jg- 'V IV VI
ABM'tACTS. Com ds of the type A, B C wi Ut Cu and A-g for kI, Ge and Sn for
- pa
vi 2
B 1-V -in I S. Se and Te for C were prepared bv direct fusion of 8toichiornetric proportions
vi ~ae AemenLs in quartz vacuum, ampoules in an afort w produc;G and avaLuste new
nfiiwtor materials: The compounds C-,j2CrPB-, (M P 95.50, Cu,Wj MEEM, Cu,
('tj,y-SnSn2 (897), Cil,Ge're, (4 92-1. and ti ..Sf i t -11' v. i f, '.11V es -'-~atedj
-ra -i PAM T 3 1 e v t- ;v I !-i a 5 0 1 oad w as
-1~cturilFy by x--ray and from debyeg -mr, 9
usOd to dqtermine the mixtrohardneaff, md the melUng tempera-Wre aneP phase ratio were
-Mr xarm respectively. -- The
determide&Uy-thiemel d c 0StMCtttr&. analys,56, dmtz' ahwe'tt that'll'
sum 4
fdavf the compoun4o.,," T1*66ifivouud

1, 326~j
4 ACC&IOSION m4 Auo445a
e~3 was-eubjected, to m lore elabo- rata:stractural studleg on the basig of which dial-'
gra-ma of its formation (Fig. 1 of the Enclosure), the zero--network of Its reveriied
lat'jee (Fig. 2), the distribution of Cu and Ge atoms in the (001) piane (rf the "eudo-
i a L11 Cil anti the s tru ctural distribution of Cu and Ge atom iq were prepa i -d A I a r-ge num her
I= rsuitli WaWdUad CA C Cagz"Te Uu.,Ge8e CuGe2%,
u2Geft3 - Cu~S~G., Cu2G'eSe3 31 3
rjaArj ayvlEma were also preparfd v-io trrioi4tq,
The thr:rmgd eondhucHvitv mc~-exur~-nng,.n- w~rr
OU7 [_ZeCn COLLLjapo OICUrae.-
=8. 3 =WZ WWI 5 fligurtz-G.
Card

ACCESSION NR': AP4011746
S/0181/64/006/001/0113/0115
AUTHORS: Goryunova, N. A.; Kesamanly*, F. P.; Nasledov, D. N.; Rud, Yu. V.
TITLE: Electrical properties of p-ZnSnAs sub 2 crystals
SOURCE: Fizika tverdogo tela, v. 6, no. 1, 1964, 113-115
.TOPIC TAGS: p-ZnSnAs sub 2 crystal, electrical property, chalcopyrite structure,
Hall constant, specific conductivity, vacancy
~ABSTRACT: The present work is a continuation of two other works (N. A. Goryunova,
.S. Mamayev and V. D. Prochukhan. DAN SSSR, 142, 623, 1962) and (P. M. Gashimzade.
Izv. AN Azerb. SSR, ser. fiz. mat., 3,67, 1963). It represents a study of electri-
,cal properties,exhibited by ZnSnA82 single crystals. To resolve the contradictions
pertaining to this substance, the authors carried out an x-ray analysis of crystals
and proved their structure to be of chalcopyrite type with parameters: a - 5-8515 t
.0.0005 X, c - 11- 03 1 0.001 A. Samples used in this work were parallelepipeds
;1-5 x 3-5 x 12 mm~ cut from single crystals. They were tested for specific conduc-
tivityc9 and for Hall constant R. Measurements were taken in direct current in a
constant magnetic field. The study brought out the fact that this material exhibits
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ACCESSION NR: AP401174
'inclusion conductivity throughout the whole range of temperatures tested. Between
,150-200K there appears a.pronounced maximum on the R - Temperature curve. The
:authors believe that this maximum can be explained with the help of a two-zone
`model. It is believed that.quantitative determination of the valence zone structuis
.in crystals of ZnSnAs2 will require a complex investigation of the kinetic effects
~iin crystals with various concentrations of vacancies. This will call for a study
:of R and 6 at low temperatures (2-78K). The authors thank A. A. Vaypolin and T. S.
:Lagunova for their help in obtaining quantitative data, and F. M. Gashimzade and
iO. V. Yemellyanenko for their evaluation of.the work. Orig. art. has: 2 graphs.
!ASSOCIATION: Fiziko-tekhnicheskiy institut im. A. F. Ioffe AN SSSR, Leningrad
;~Pbysical and Technical Institute, AN SSSR);.Inotitut fiziki AN AzerbSSR, Baku
Institute of Physics, AN AzerbSSR)
:SUBMITTED: 12jul.63 UTE ACQ: 14Feb64 ENCL: 00
~SUB CODE: PH NO REP SOV: 006' OTHER: 006
Card 2/2

A089-
'kCCLSSION NR:.AP4041383 8/0048/64/028/006/1065
MUM Vaypolin,A.A.; Gashinzade,F.M. qqryunov4,1fqA. Kesamanly*,F.P.; 08manow,
E. 0. ; Rud I Yu.V Nasledov# Do No '(Doctor -ot phyaico-mathematical sciences)
iTITLE: Ifivestigation of the physical-ch.emical and electric properties of. crystals''
'of somo ternary semiconductor compounds of the AllulVCI type Lloport, Tbird Confe-
ironce on Semiconductor Compounds he.Id in Kishinov:*16 to 21 gap 19627
:11 SOURCE: AN SSSR. Izvestiya. Seriya fizicheskaya, v.28, no.6, 1964, 1085-1089
TOPIC TAGS: semiconductor, electric conductivity, Hall effect, crystal structure,-
cadmium compound, zinc compound, carrier mobility
ABSTRACT: *Single crystals of the following semiconductors were obtained and their
properties were Investigated: CdOeAS26 ZnSIA82, WS02, ZnSnAs2 and ZnSiP2.' The me-
thod of synthesis Is not described. X-ray diffraction showed-the specimens to be
single crystals with the chalcopyrito structure. The crystallography of,these mate-il
rials Is discussed briefly, and the lattice'parameters, density, hardness.and malt-
ing point are tabulatedo Both.p-type ind n-type crystals of CdGeA82 were obtained*
Only p-type conductivity wasfound,.In the.,other two,areenides', and only n-type In
Card-1/i .... ..

iACCESSION NR: AP4041383'
ZnSiP2. Results of .conductivity and Hall coefficient measurements over the temperaJ
ture range from 90 to 6000K are presented graphically for an n-type Me% crystal$,
a p-type CdGeA82 crystal, and several ZnSnA92 crystals with different but unspeci"
fied impurity contents. The Hall coolficient of the n-type CdGeAs2
was independent
of temperature, and the conductivity increased with increasing temporatttro ab9ve
about 1500K. The concentration of conduction electrons was approximatel 17 cm-3
Y, 10
and their mobility was 103 cm2/Vsec..With the aid of thermoelectric measurements,
fthe'offective mass was estimated to be 0.027 electron masses. 7be Hall coefficient
of the p-type CdGeAS2 decreased rapidly with increasing temperature above 2000K and
changed sign at 5200K. Neither the conductivity nor the Hall coefficient of the Zn-
SnAs2 crystals varied greatly with temperature. The Hall coefficient exhibited a
maximum at about 2000K which became.less pronounced and shifted toward higher tem-
peratures with increasing Ampurity content. This is ascribed to conduction in the 1;
3Impurity band. The band structure of the materials Is discussed. Tho effective
masses of the carriers In the conkfuction.band and the V2 and V3 valence bands were
calculated, and theso and the gap energy are tabulated. All these quantitios in-
creased with decreasing molecular, weight. The energy gap ranged from 0.53 to 2*5 dV,.'
and the effective masses from 0.020 to 0.096, 0.035 to 0.19, and 0.12 to 0.49 elec-!.
tron masses for-'the 01 V2 "d V3~ bands, respectively. Orig.art.hant I formula, 6
C

" "I" ~si --- --~ : - .
-j ~t - ., :., .
~, ~- !,h 34~K- , . . ,
I- -, - , ~Sfa~M7 RE& r ~.- .1
- I , .
. . - .

Ap4olb5W S/0020/64/154/005/111b/1119
ACCESSION NR:
AUTHORS: Vitypolin, A.A.; Goryunova,,,',4.A.; Osmanovp E.O.; Rud'
Yb. V.; Trot yakoV;"'D'.-N`--
TITLE: Investigating ZnSiP2, CdSiP2,, and.ZnSiAS2 orystalis
SOURCE: AN SSSR. Doklady*., v. 154., no. 5,, 1964.. 1116-1119 1
TOPIC TAGS: high melzing compound,, forbidden zonep chaloopyritet
Debye cryozallogram, right prism, phosphide crystal, xra,7 diffrac-
1tion lattioe spacing, electronic mobility, anisotropy
ABSTRACT: The lack of Information.on the ZnSiP CdSiP and
2P
ZnSIA82 into heir*sirjeture by
crystals prompted an investigation t
the use of x-ray and electriameasurements. The phosphide crystals
ranging from ruby color for
are transparent and vary In color the!
ZnSiP2 to lighr, red for the-CdSiP The anistropy of the laternal
2*
Card ItL3

ACCESSION NR: AP4ol65o8
structure of these crystals is projected to their external appear-
ance; the phosphide crystals are divided into hexahedral, penta-
hedral and trihedral, according to their lateral faces. They are
resistant to a variety of acids and alkalis. Optical measuremente q
detormine the width of the forbidden zone
have made it possible to
of the crystals under consideration. These ZnSIP2 and CdSiP2 para-
meters have thus been defined for the first time. The width of the
ZnSiAs forbidden zone was found to be less than 2.1 ev. The micro-
hardnegs of the phosphidesis-somewhat greater than that of their
binary analogues, and their width is larger than that of the for-
bidden,zone of the same order. As for the arsenides, their micro-
hardness is of the same order as that of their binary analogues, and
their forbidden zone is narrower. "The authors are grateNl to B.P.
Zakbarchene and G.A. Sikharulidze for their assistance in determin-
Ing the width of the forbidden zone. In conclusion, the authors e)r-
press their gratitude to F.M. Gashimzade for'a discussion of the re-
sults.11 Orig. art. has: 3 figures and 2 tables.
Card
A

ACCESSY014 NR: AP5018922
f' c a~d' thd E~
hauaen transverse ef e t, Iertnae~f -were studied between 100 and,75OK".
T! R I PoIji I i ti e. S, of - the elactrong~and hales at 300K are respectively equal
q/V sec. The effective elle t-r 0.027 Me-,
150
Er-m th,~ thermf~euif and Hall effe--. "'P, ~~- -1th.- expless their
-prprect-qLion to A, A~ V F -M. GasM-de, and H. 0. Lipavakava."
I! I i as :3 figures and I
Aq9QCIATION: Fizika-teldmlche5kty institur- im, A. F, loffe (Phrsicot achnical
zerb';SR)
I-Stit"IL f L mLki "'JI Azerbs,3-11, , "I'lkil ~T:-._~
S!"EVITTEM VFeb65
ENCL- 00 SUB CODE!
I(', SS
Card

A

77777777777777777
ACCESSION UR: AP.50125-34.
dvised by one of the! aulhors
The crystals were grown b1i --A- methoda I
(Rud'. with E. 0. 03manov, Registration Certificate No. -18437 of
'M
~ -.:i ~T -j -D ~ ) .-~e samples had a surface of natural. brilliance,
a rid regulax f,.)nn was attained by grind.-Ling. 1%e crystals -had
an electron density -(1-2) x 1017 cffC3 at room temperature and a
Z~y ~-70-'00 =2/V-sec. The results are showa in Fig - I
of the Enclf:isure. 'They are briefly analyzed from the point of view
posstble impurity level scheme and possible main transitions.
-pera~-ure dependence of the width of the forbidden band is
found to have a constant a = -(7-8) x 10-4 e'V10K. It is noted that
carrier capture is especially effective at low temperatures, when
the relaxatLcn time of the photoconductivity is of the order of
several minutes and decreases with rising temperature. 01-ig. art. has-,
[02]
ASSOCIATION: F1ziko-teXnrdCheskiy Ins titut im6 A. F. loffe AN SSSR I'Ph
Licc-
~~clu)ical Thstitute, AN SWR)
C,,.d -2/

WP(b) UP(n) Tn/AIP
N111 AP5020691 UR/0185/65/,010/0081086710872-.~
[OR- nxioya
_.~ychkov 0 '(Bych;wv, A. G.); florymova, N, 041;
P. =A~ YU4 `M1cN&K'kov
L-, Kesamanly, F. ov, V. K.. 01ityurev, V. K.); Rud
S. V. ~ (S1o56a_ddk&-v,_:13_3. ~V. -n;1- V th (r.
Yq
T1T1Z- :Electrical and photoelectric properties Of hisip
2
SOURCE: Ukrayins~~Jfizychnyy zhumal, V. 10, no. 8, 1965# 867-812
TOPIC TAGS*.. electric conductivity, Hall constant, pliotoconductivity, zinc comp=dl
.' den band
temperature dependence, forbd
ABSTRACT: 1he temperature dependence of the electric. canducti~y,,,,Pie Hall constant
x~ -ing t
in the tcj )nduct _ctrya distribu
vi
it
-q rature r, , 80--670K,-and the plLatooot
le
tion, dependence on the electric field, intensity of lilumii-lation, and temperature- in
t1w-, renge P30-295K) were studied in n-type 7aSiP 2 crystals, - Mle "fage size of the
cr),stals was 8 x 1.5 x 0.3 m. The investigated. saAVles 11v an electron concentra-
tJon of 1--j! X 1017 cm74 and a Hall nobility of 70-100 cm /v-seec. - The HAII and
cMductivity measurements were carried out with dc curTent with tkpe aid of an ordinarY
potentiometfir in a cotistant nuVietic field. Me photoconductivity was investigated
by a carpensation method utilizing unmodulated constant radiation. A type M 19513
galvanometer, was used to register the signal. Mie electric conductivity decreased
sharply and the Hall constant incmased sharply with decreasing teNterature. Thiso
together with the small electron mobility$ indicates the presence of impurity com-..
Card 1/2

,L.4WL2-66
ACC NRs AP5020641,
pensation. , The 1kill electron mobility changes between 350 and 6701'k like T-1. On
lowering the temperature the nobility increases sharply. The ionization energy of
the donor "urpurities was found to be, 0.00 ev. Intrinsic photooonductivity was found
to predondmate at all investigated temperatures. Its maximum is shifted to the
short-wavelength side with decreasing temperature. 7he width of the forbidden band*
its variation with tenperaturv,, and the coefficient dependence of the photocccid=t-
ivity on the electric field is linear up to fields of 20 v/an when heating apparent-
ly becoms appreciable, -At roan temperature. an acoeptor level has been noted at
0.32 ev above the valence band., The activation energies of the donor and acceptor
levels were also determined from the temperatur-e dependence of the photoconductivity.,
Large relaxation ~times 6.f the. photocon&~_-tivity have been observed,, An energy level.
diagram of the impurity trmsitions is proposed AlIfi-conclUsich t1he authors;express
their gratitude to Professor D. M, NashTdov for support and discussion of the, work.
Orig. art. has- 6 figures,
ASSOM)TION: KyyJ_vs#kyy pedinstytUt im. Oi k6:*fior'kcho CKiyeVskiy'pedagK)&icheskiy
institut iffl.. A. M. Gorlkoppl 46Av'Pedagogical ins+Utut4,.
-OV
ENCL..
SUBMITIED. 19SepS4 SW CODE., ssizop
NR PEF SOV 007
y'
Carc, 212

__qq~ NOVAS N.A.; KIREWSKIY, L#V*j KIASSEN-NEKLYUDOVA, M.V.
Colloquium on solid state physics hold in Rumania. Vast. AN SSSR
35 no,082 Ap 165. (KRA 18s6)

-p
6L-764-65 MIT )/E~rr-(t) WP(c) JD
T(~
AF5 .0 77 /o2 hV6-, /Ifj' 1 110,051/0013/0016
F -2 2 0 82
AUTHOR: Coryunova, N. A.; Abdurakbmanoya....A. A.; Aliyev, 'E4. I.
b--undS1-Y r-'ear gallium antimonide in the P,,lj
J
a 1 1 ur~. S Y G t' c U1
0OUBM', M AzerMjjo.. 110--5, 1965, -13-16
T01" I 'C-' TACB sen-"l con ducting irdr.5-ib--Inary smyckg-rj, gemi conducter --alloy
terna-r-Y alloy systeE. metal phase system, interipetallic compound, gallium compolmd,
antimonid,~, telluride, phase diagram, solid solution, gallium antimonide, gall-iuni
.telluride, pseudobinax-f system.
1213TRA(7 - The Ga'---Sb---;~Te 12-'-y-s nn- ositions along and betweev the
aL o, of co. p
L; Of lic fjh~.se diagran) hav-~- *---n synthes`zc-d ,3~.no by x-ray tnicro-
-Id 'ny mi -- -)hardne s s ate ai;:j r,~! ~9! Ci r-1r, (j f (.-CMP' Cte
solubilitf JiLn thie s-lid state nea-- ge-lliu-n antimfDnide Tnis srud5 was undeMaz,,ea
w) klev,-~Icp new, aemi-,orductcr materia-le with given properti.-s-, Whi'li are based on
!solid solutions of it-III BV--AIII BVI and Pill BV-A!" B types. Sozie data were
2 3
repoited earlier on the propefties of solid solutions in +he in--4;b-Te system and
P a.
e cy1stence of solid solutions near aSb In the Gaqb--1e srstem. The lloys~
Card /2
E i 7 7~
AW

L 6~76 6.1
7
SSIOU HR*.- -02
6 zed by. at'
Isyath6 i ' .. , OL A -of- _Pura:
were Lng I .
P__
elemi--atary. componed s-
t
evacuated am-pulT.:: Sln916~-phas.e -structure- wad identified in the coqositions vithin
'the (GaSb) )c (Garle)I-x section up to 16.4 mol/l. GaTe, in agr-ement *.rth an earlier
~,a2Te ;, and in the
"a:-- 3x ta, le 3i 1-_x uect, ion tip ~o
areq r~f f.lhe triangular phue diagram between these twc: sec,4
neal-er GaSb. The
-.;t --ris were rormed only along the two pseudobinary aectionf indicated a-
~he In-3b-Te system in which they form along all exifting pseudo-
binary sect-ons. The single phase a-lloys.-along both sect ions obey It he Veg&rd lav4
!A study of the electrophysicEL
L ~-sn hermial properties of the selectEd homogenized
alloys' is forthcoming. Orig. art. has: kfigures. JJKJ

Fizika-t e 1 z
ASSOCIATION: ekhnidheSki~, im. A4'. pa loffe
I 1(fts
-- ~ - ~_ .- ,- jN_J~ , -
Mistitute); i's itut fiziki erbSSR (institute of Physics, AN AzerbSM)
sua~qu-.TED: ogju164 EIICL: 00 SUR CODE! SS
ti--u suv: u4 OTHER: 003 ATD PRESS: 14517f
Card 2

?8-6.= Z.411W/T~ (t)/9RPQ1`/E71A( Y:
_95978-65 JD
ACCE
ESSIONAIRi APS011HIT -
537.311.33
_21
AIJTHOR: Go 6ii~iia _Vf.i I-- -Chien Ping-hsi
iova U. A ;'Sok
=11u,
TITIX - SyntheAs. -and certain ertids: o~. the compound ZnGeA.-,2
no,:- 4,: 196S, 771-778
iSOURCE: Zhurnal. prik ladnoy. kbimii
'TOPIC TAGS. aLnc_campcund~ germ,113GIM dompbund,_ arsenic compound, crys-tal fonration~`
ABST%kM Ver-tical directional crystallization was used for W"/continxious chemical
-eacl
. -, () n w h i dh nroducne (for the f i rst t i rrw~ )the
,34
Mfor-mvv to the pattern tm, formati on- or
tetrahedral phases. X-ray diffraction and microstructural analysis show that
ZnGeAS2 is a single phase compound. Thermal analysis showed that thi!; corn_ound dlls-l
sociates .then ir-elted. Thermal analysis and zone recr-,rstalliz-i- ---a-aled that a
-,emperatui-,:! ma.cimum on. the ZnAs2-Ge pseudobinar-i section -o Zn(',eAs-
ilal~er is a congruently melting coompound which dissociates in the liquid
phase, but not in the solid phase. Physical
me -ents werv-_ made oil sarrm-les hav-
:ng A- -)arge airrier concentration of 3.5-10" =-I. 7111e valu--,~ Df th4.- forbidden
Card 1/2

aev_--:&iass -c(xwaun(w
1 0 -3,, i965 6j3-434-.--
TOPIC TAGS-- .~klass amic a id iL ---Y. itiiaouf t, P_ C_ ound 3ound,semiconduet6r.:
-COML
i compound, cadmiild/Zerm~nium- arsenic, compound, cadmium germanium phosphorus compoun
phase transition
ABSTRACT: Quite Unexpectedly a glassy state has been discovered during a stu
dy
of high-teimperature phase transitions in AIIBIVCY semiconpetor compounds, espe-
cially in CdC~e~2. A single-phase glass ingot of CdGeAs -and a thin glassy 18.yer
IN,
-if CdGeP were obtained from melts at a high cooling rate fover 20OC/t3ec). Tne
2
physical and electric properties of the glassy CdGeAs2 were Compared with tarise of
Lhe crystailine CdGeAs2' A relatively small change in density on transition into
'N
lsla_-,~~y Ltate and a correspondence between ~-he lilfus`-~r. Feq.?s of the x-ray
R4. f!
-it t e rn f b OVI q t Rt P ~I Wou 11 _.' - - -
r e~rder'
i.e., no change in the diamond-type structure of the CdGeAs2 crystals. Orig. art.
P~:': ligures and I table. (,TK
"Ord
/2

i -
- ~-, - Card -2
I;:-.- I

L MC(l)/Ma(m)/T/EWP(t)/EW(b) Jj C), jDlqQ
M(-
AA
ACC NR: AP6000875 SOURCE , CODE:
'UR/0181/65/oo-,r/o3.r_,~~655/3657
AUTHORS: ftlavalloy, V. V.; Goryunova, N. A.; 1~oishak, N.-M.
Mamayev,,: S.; Nazarov, A.-.
ORG: P_hysicbtechnical Institute im. A. F. loffe AN SSISR. Leningrad
(Fiziko-tekhnicheakly Inatitut A SSR)
p-
TITLE: Some properties of CdSnAs.,
iSOURCE: Fizikk. tverdogo tela, V.-,7, no. 122 1965$ 36r,5 365T
TOPIC TACIS: cadmiu ;m a-ompound).-arse .nic com ound, tin compound,,
p
single ~ crystal,~- electric condudtivity, Hall coefficient, rMo'..-
~electric power-, temperature dependence
ABSTRACT., Although the properties-of n-type-.QdSnAs have been des-
cribed in the literature.,-there is no publis;ZeFinf 'I h
d ati on on t e
~p-type~compound. ,The authors have Produced by single cryst Ials of
ip-type CdSnAs' z on e melting and measured the temperature dependence
of the specific electric, cQnductivity 0 the Hall coefficient R, and
Cord 1/2

L 14133-66
ACC NR: Ap6ooo875
,the thermoelectric power a on two samples measuring,11.4 x .2 x 2 4-
3
and 6.4 x 1.45 x 1.1 mm"with bole densities 2.6 .and 17 PM '_3 M.!.:
3 x -10
ispectively at 100K. With increasing temperature.tbe Hall constant I.,
-0 575
Ireverses sign near room temperature, and a varies like T * with A-
iincreasing temperature from 100K to room temperature,.after Which it
Le con-
'increases sbarply in the region of the transition to intrins:
,'ductivity. The differential thermal emf is positive at low tempera-. Al,
~tures at 180 ~Lv/deg. At 380K it reverses sign and incteases in ab-
solute magnitude to 240-4V/deg. The width of the forbidden band:at
-iOOK was found-to be Oo254-ev. - The -differences -betwaen the-.n-type-and
,p-type samples is attributed to tbe.difference in the carrier mobile-.
:ities. The effective mass'of the carriers is found to be 0.41 M It "'I
0.
ois concluded that CdSnAs like its iscelectronid analogs InA-S,,and.
21'
InSd, is characterized by a large electron/bole mobill.ty ratio and a- 1-71
jarge hole/electron effective mass ratio. Orig. art.~ has: 2 figures,
~SUB CODM: 20/ SUBM DATF,:,,-28jun65/ ORIG REF:..002/ OTH REF: 005
Card 2/2.
7`~

L 43oE
66
EWT(l)/EWT(M)/T/EWP(t)/9T1 LIP(e)
373 CNPA) SOURCE CCDE1
ACC NRt
AUTHORSt Goryunovaj No Aoj Averkiyevas Go Kai Varpolin,, A. Ae
.0 loys
TITLE: On the possibility of obtaini single crys tals (f poly" Mponent &I
SOURCEs Ref. sh. Metallurgiyaj, Abe. 3.1G275
olln cow ww obtaineds --., 60 U30!t~&)-20 Cu2GOU3, Of size 3 x 2 x
cition)
M
Fis Urawlation of abs a
EEF SOUFZEt Sb. Fizikao Dokl, k XXIII Nauchno konferentsiij!!~ ~iwh.~-st~oitt_
in-ta. L., 3.96$, 52-53
1
TOPIC TAGSt allium~ RqNera selsr~LU2 arsenic,, german containing compoundp
gallium arsenia~eMoy jwn~Aeak,,"s
ABSMACTt The possibility of obtaining homogenso us sj~;3~e oryst of the quintuple
system formod on the basis of Ga arsenide and the ternary compound Cu2GeS93 was
investigated. For synthesis of specimens starting with 60% DU0-40% Cu2GO503,
the x-ray powder pictures show only one system of lines corresporAing to the ZaS
structure. The alloy lattice periods follow approximately the low of Wegard. How-
ever., a complete homogeneity of specimens was not achieved; the x-ray pictures
showed lines of a second phase. Annealing did not remove these 3.1nes, Zone melting
yielded an a 10--i= length of -which had a one-phase structurso By the method'
of transport, reaction., using iodine as the transporting agents single crystals of the-
B

Ar. 47339-66 MT1)LEW7(M)/TAWP(t)/m__ lip(c) wwjlj)~
AR602576-' SOURCE CODE: UR/O058/66/ooo/oo4/AO76/AO76
AUTHOR: Zhitarl, V. F..; Goryunova, N. A ; Radaytean, S. I.
TITLE: Growth of single crystals om the gas phase in the zinc-indium-suifur
system
SOURCE: Ref..zh. Fizika, Abs. 4A638
REF. SOURCE; 6b. Bimpozium. Protsessy sinteza i rOBta krintallov i plenok
poluprovodnik.- materialov, 1965. Tezisy dokl. Novosibirsk, 1965, 9-10
TOPIC TAGS: single crystal growing, zinc containing alloy, indium containing alloy,
sulfide, antimonide, uniaxial crystal, transport phenomenon
ABSTRACT: Conditions are developed for obtaining single crystal plates of the chemi-
cal compounds ZnIn 2S4(1) and Zn2 Sb(II) by the method of gas-transport reactions using
iodine as the carrier. The maximum dimensions of the obtained plates are 18 x 12 lim
for I and 12 x 7 mm for II at ru 0.1 mm thickness. The investigated ternary sulfi4s,
and also their initial binary compounds, could be obtained by combip~bg the synthe '~is
reaction and the single-crystal growth reaction from the~_O~ashase.I'To this end's
initial elements of high degree of purity were used in a specified stoichiometric,--ra-
tio. Crystals of compound II are optically uniaxial and have photoelectric propertie
The possibility of applying the method of chemical transport reactions for doping I
Card

47339-66
ACC NRi A116025762 0 -
and II with Cu and Ag in investigated. (Translation of abstract].
BU CODE: 20 - I
7777TWTFWWW,'-,A ` -"-'

-F-~~&--Ewn "mYVE-kP-(t)/En IJP(c) JG/JD
A-CC NR: AR6017262 SOURCE CODE: UR/OO58/65/O00/O12/ED47/BDW
AUTHOR: 2oryunova.*_N.,_A.i Valovy Yu. A ; Zlatkin, L. B.
r
TITLE: Production and inv;stigation of the properties of single crystals of ZnSiP2P
thin ternarj analog of gallium phosphide
Avi
SOURCE: Ref. zh. Fi Abs. 12E363
REF SOURCE: Sb. Fizika. Dokl,. k XXIII Nauchn. konferentaii Lenii~E- inzh.-Stro
in-ta
. L., 1965, 18-21
TOPIC TAGS: single crystal growing.. allay system, forbidden band, absorption edge.,
photoconductivityp spectral ener%y distribution, valence bandy conduction bandy
electron transition
ABSTRACT: A gas transpoft method was used to obtain light red p- and n-type needle-
like ZnSiP2 crystals up to 10 am long, and plate-like crystals measuring 6 x 1.5 X
0.1 - 0.3 mm. The crystal growth direction (111] coincides with the tetragonal c
axis. Measurements were made of the absorption edge at 300, 77, and 4.2K of the
spectral sensitivity of the photoconductivity at 300 and 77K., and of the dependence
of the photoconductivity on the polarization of the exciting radiation. The sharp
photoconductivity and absorption edge gives grounds for assuming -the presence of
direct transitions of the electrons from the valence band to the conduction band.
The width of the forbidden band at 3006 In -2.13 ev. A. Porotikov. [Translation of
abstract]
i':.'B CODE: 20

'-ACC'*-NR~-A1'60l5061
SOURCE CODE: UR/0363/66/002/005/0785/0795
AUTHOR: Goryunovat N. A.
ORG:Physicateclialcal Institute im. A. F. Iaffo, AN SSSR. (Fizilco-takhnichoskly in-
stitut AN SSSR)
TITIZ: Chemistry of semiconductors - a branch of inorganic chemistry
SOURCE: AN SSSR. Izvestiya. Neorganicheskiye matorialy, v. 2, no. 5, 1966,
785-795
TOPIC M~GS; chemical conference, semiconducting material, inart gas
ABSTRACT:
In a paper presented at the -20th Congress of the International Union of
Pure and Applied Chemistry, 4, N. A. Goryunova, a leading Soviet authority
in the field of semiconductors, discussed the problems encountered in the
search for'new inorganic compound semiconductors from the viewpoint of the
laws goyerning the formation of the simplest inorganic compounds. The
author, who is associated with the Ioffe Physic ote chnic al Institute of the
Academy of Sciences USSR, attempted to establish a scientific basis for
classification of the binary and ternary inorganic compounds, including
semiconductors, from the viewpoint of crystal chemistry. Such a ciassi-
Ccrd 1/5

ACC NR: AP6015062
fication would be analogous to the Periodic Table of the Elements. Certain
isoelectronic series of compounds could be grouped together, and the groups
of copipAunds could form. a system on the principle of the chemical analogy
l'of crystal. *cht!mical groups.
i Goryunova states that the most suitable skeleton for such a unique
1:isystem',woixld be the group of compounds with coordination four and normal
1*
(highest) valence state of the atomic components. The compounds of this
group wobld have a. tetrahedral or octahedral structure. The IV A subgroup
Lelements with- diamond-type, structure and the group of inert gases would
.be the two mirror symmetry axes of the suggested system of compounds.
According to the author, the principle of chemical analogy as the basis of
the system makes.it possible to establish a common link between the com-
!pounds of different groups and, therefore, provides a solid scientific basis
for the search for new materials, not only typical semiconductors but also
compounds with intermediate properties.
Goryunova considers her book Vdmlya ab? ~adobnykh. poZz9mvo&zVm Khm*&Y:
'of semiconductors with diamond-type analog structurc)'~* to be the starting
~point for development of the proposed classification. The book presents an
isoelectronic series of binary and ternary compound semiconductors with
tetrahedral atomic arrangement analogous to that of the rV A subgroup of

ACC NRi AP6015062
;elements. In the present study, new isoelectronic series of compounds were
added. These were derived from the chemical analogy with the inert gas
group of element.% and, consequently, included compounds with octahedral
t
atomic arrangement. e binary coml5ound!5, structural analogs of the inert
gases, are of the A-S ITP AilBVI and AIIIB V types, the ternary,analogs of the
I ii V
2 'VC VI A BiVC
inert gases are of the AI~IHC VI: A2IBIVC3VI, A3B 4 a:nd.
A B IVC 3V types. The same combinations of elements were previously
und in the isoelectronic. series of semiconducting compounds, analogs
fo
I of the subrrroup IVA elements, This similarity in chemical composition of
compounds which belong to two *different atomic structures -octahedral
j'and tetrahedral - led the author to believe that all ihese compounds are
formed according to a common mechanism.
In addition to the five known chemical types of ternary compounds,
Goryunova devised eight new types which may be formed with participation
of transition elements and according to the same rules which were applied
to establishing the known types of compounds with coordination four and
maximum valence.
Further'comparison of the isoelectronic seiries of the two crystal
_s makes. it e nt that the same mechanism applies to the
chemical g~joup vide
Card 3/5

ACC NR; AP6015062
f6rmation of ~_dvalent semiconductors' 'and ionic compounds. Certain of the
;!compounds of both crystal chemicalgroups. exhibit properties intermediate
to those of covalent and Ionic compounds. The ternary compounds which
combined the elements 1 various periods leaning either to the IV. A subgroup
or to the inert gases formed a separate group of the isoelectrbnic' series
This group included the predominantly covalent compounds'with~ a tetrahedral-.
type structure and the predominantly ionic compounds with a NaCM-type
The predominantly ionic compounds of the two crystal chernical gro'ups
discussed, both binary and ternary, included the,alkali halides and Na2CO3-
However, Goryunova doed not consider these compounds, even Na2C03, as
salts, on the grounds that they do - not contain any acidic radicals.* Instead,
she refers to them as sal-t-like (binary) or intermediate- (ternary) compounds.,
The *existence, withinthe system, of this group of compounds with inter-
mediate properties led the author to believe that the ionic and c6valent com-
pounds basically do not differ in respect to their electron configuration...
The classificatioh'of compounds which was suggested in the paper
!reviewed may not be, in the author's opinion, the only one possible. A
!;iumber of otheF~jpossible systems are discussed. all based on the.principle
Card 4/5

ACC NR: 106015062
ot chemical analogy but construed around different symmetry axes, some of
them imaginary, of the periodical system. Thus, isoclectronic series of
con1j)ounds were tabulated with the average electron concentration equal to
5.33 and the maximum valence or with the concentration equal to 5 but with
lower than maximum valence of the component atoms. The first of these
groups of isoelectronic compounds was formed by analoyy with CO,
~he
second, by analogy with CO,. as the prototyp~e.
The newly established isoelectronic series of compounds include still
undiscovered compounds, some of which predictably may have semiconductor or.,
!,other valuable combinations of properties. The structure and properties. of
i ~certain unknovm compounds were estimated by the author on the basis.of.
'chtZr4ical analogy with the known compounds of the same series. OrIg. art. has I
12 tablos. Irs i ... 2 ------- i'
B V* 110. -11
SUB CODE., 20,07 SUBM D=: 06Aug65 ORIG REF; 003 OTH RZF.' 005
reIrA 4 1 Ct

L 08324-67 EWT(m)/EWP(w)/EWp(t)/ETI jjp(c) JD
NRs AR6*028126 SOURCE CODE: uR/oo58/66/000/005/Ao6g/Ao-69-~l-,
AUTHOR: Goryunova 11. A.- Baranov, B. V.; Grigorlyeva, Y, 6,; Kradinovat L# Yti
_1~ryukover ....... V. D.
TITLE: Production and investigation of GaP-GaAs and Ca.19-InAs solid solutions
SOURCE: Ref. zh. Fizika, Abu. 5A557
REF. SOURCE: Sb. Simpozium. Protsessy sinteza I rosta krintallov I plenok
-Ipoluprovodnik. waterialov, 1965. Tezisy dokl. Novosibirsk, l965',r__L_V_
TOPIC TAGS: solid solution, gallium compound, indium compound, single crystal growing
crystal impurity
14
AIISTRACT: The rossibility is investigated of obtaining single c.-fstals of homogeneous
solid solutions in a wide range of concentrations. The_~~stals vere grown by the
gas-transport mothod in a closed volume. The authors elucidate the Influence of Duch.
factors as the F-one temperature, the temperature difference between zones, and the
chemical nature af the carrier, and its concentration on the evolution of the gas-
transport react;,ons and on the habit and dimension of the cryetal:a are clarified.
Optimal conditi ins are established for obtaining single cryataln of the required habit.
Questions invol-ed in the doping of crystals during gas-transport reactions are
studied. A. Po-otikov. [Translation of Abstract)
SUB COM. 20
Card.
1/1 not

L2UJI-6 EWT(m)/EWP(t)/ETI IJP(0) JD
ACC NRI AR60i1i50___ SOURCE CODEs UR/0'21-576_-Vbdd/66f/b60q/8
AUTHOR: Goryunova, H. A.; Valov, Yu. A.; Zlatkin, L. B.
T : Generation and analysis ofthe properties of ZnSiPg
SOURCE: Refs zh, Elektronika i yeye primeneniyet Abs. lB65
REF SOURCE: Sbe Mike. Dok1s k XXIII Nauchns konferentsii Leningro tuh.-stroit.
in-ta..L.. 1965, 18-21
TOPIC TAGS:- single crystal, semiconductor crystal, crystal absorption, single crystal
growth, crystal theory, gallium arsenide
TRANSLATION-. Using the gas transport method, light red, needle-shaped, ZnSiPZ crystals
up to 10 mm in length, and plate-like crystals 6 x 1.5 x 0.1 to 0.3 Mm were obtained.--
The direction of crystal (111) growth coincides with the tetragonal axis c. The fol-
lowing parameters were measured:. the absorption region at 300, 77 and 4.20K, the spec-
tral sensitivity of photoconductivity at 300 and 770K. A relation between the photo-
conductivity and the polarization of the excitation 1; radiation was found to exist. Sharp
ly defined re.0ons of photoconductivity and absol~iion suggests direct transitions of
electrons from.the valency into the conductivity zone. The forbiddon zone has a width-
of approximtely 2.13 ev at 3000K*
SUB CODE: .20
UDCs 539493046947028128*
Card 1_11 not

ACC NR, AR6030494 SOURCE CODE, UR/0275/66/000/006/BO14/BO14
.AUTFM:_~~pr~,' N. A.; Baranov, B. V.; Grigorlyova, V. S.; Kradinova, L. V.;
Fa"juko-va, 1. IM, P-rocQhan, V. D.
TIME'; Production and investigation of GaP--GaAs and G,%As--InAs solid solutions
SOURCE: Rof. zh. Eloktronikg i yoye primeneniye, Abs. 6B93
REF SOURCE: Sb. Simpozium. Protsessy sinteza i rosta kristallov i plenok
poluproyodnik. materialov, 1965. Tezisy dokl. Novosibirsk, 1965, 7-8
1O?1C 'LAGS: single crystal growing, semiconductor crystal, solid solution
ABSM1%CT.: Single crystals from solid solutions of GaP--GaAs and GaAs--InAs systems
were grown by the method of gas-transport reactions in a closed space. Effects of
vaporization-zone temperature, crystallizer temperature, temperature difference
be-tween the cold and hot zones, geometric factors, and chemical nature were
investigated. Also the problems of crystal dopirgin gas -transport reactions were
clarified. GaP--GaAs and GaAs--InAs single crystals were produced in a wide
concentration range. Optimal conditions for producing single crystals of desirable
habitus were found. A possibility of doping single crystals in the gas-transport
reaction was found. Some electric propertios of singlo crystals were measured.
N. G. and others. [Translation of abstract]
SUB CODE:
Card 1/1 UDC: 621.315-592.4:541.412

Acc IN
AIZQ36786 ~'C)" CZ COD", UR/036)/66/oWO1i/i966/1969
AU-.' GA: 1,c:;hnko-.rA, G. V.; Flochko, R. L.; VaYpolin. A. A.; i'avlov, 13. V.; Valov.
Yu. V.; Gor;~~
0~,' ',: 11hysicotochnical Institute im. A. F. Ioffo, AN SSSR (Fiziko-to&nIchoskiy
Instltut AN 555R); Kiev Podagogic Institute (Kiovakiy podago.pichoakly instit,t)
1 Production and some properties of the somiconductor compourds ZnSn?2 and
LN 55S.R. izvostiya. Noorganichaski tor 1y, v. Z, a. 11, 1966,
yo ma ia n
j: %',no containing alloy, tin containin a oy, cadmium containing alloy,
yi~os,,-horii5 conULIning alloy, semiconductor alloy
ta of
?.-ovlouz attompts to ob in ZnSn? from a mixture co;;pononts taken in
ratio yioldod a product containing a mixture of phasot.. including the
ZnSnP2, but also zinc and tin pho;phidos. ilho proront article
doLcribos L raothod for producing single ;~haso ZrSn?2 by cryutallizatier. frc= a dilute
zolution In tin. 7ho initial weighed portion consisted of zinc, tin, and phosphorus,
tn -,~'i!ch tho tin was taken in large excess over tho stolohionotrIc r'nount. A:Wr
heai,ini; to a tomporaLure of 8700C and slow cooling in an evacuated quartz ampoule, the,
Curd 1/2-

ACC M, AiQ3678~
from tho tin. -,ho ruznainirq: thin filn. Of on tho ZnSn?Z
Cr.,--st'ils w.-,z dissolvod in concentrated nitric acid. 'Aho cry5L-ils of Z.-.Sn P2 were a
M With
i.or, nnd wrjro 3 x 1, 5 x 0.5 r4a in -ino. o"aloo-ua -irLa,nts
that it could be produced from a dilute solution ill Cudmium. X ray
ar.-LIyai5 of the compounds obtained made it possiAile to dotormino the typpo of crystal
ZIt'.-..:--11'-CI, t"'.) I:JttiCo constants, and the microhardnoss; tho~;o v"_*-I.--jz- aro listed in
It was shown alzo that ZnSn?2 has a considorabla r"j-,xt of chemical
-05'i5l-anco to a nu;6bor of mineral acids, including nitric, hydrochloric, sulfuric, and
fluor.1c. -whilo Cd'n?, has very little resistance to thoso Orig. art. bast
I f 1,~uru and 2 tables.
5in cmz; ii, N/ som D4Tr-.& z3rac65/ C-RIG ;tLr-: ODI/ Q'M ?.Z'... 002

j ACC NR.- Al"6036 97 ~A SOURCE CODE: L%,1030'31'6610 n2/04
J.112076/207q
1AUTHW; Bychkorv, A. G.; Plechko, R. L.; Valav, Yu. A.; Goryunova, 11.
PG: lilhy~sico-tachnical Institute im. A. F. Ioffo, AN SSSR (Fiziko-told~,nichkeskly
4.
institut AN S33R)
;'TITUE: Somo physical properties of the somiconduct-Ing compound CdS'L?2
;SOLTIRCZ: AN SSSR. Izvestiya. Neorganicheskiye matorialy, v. 2, no. 11, 1966,
~,078-2079
10PIC TAG13: somiconductor alloy, cadmium containing alloy, sllico-oi containin.c, alloy,
!Phosphorxis, alloy
113STRACT: Ex-periments were carried out on the production of sin-L) crystals of CdSi
P2
ro-,:. meta ~
:'lie solution molts, as well as with tho aid of chemical -.ranspart reactions,
~in Vnich tho source of the material was a ternary compound obtained frovi tho solution
'no-IL, arid in which the transport agent was iodine. 3y the solution nothod there were
roiucok-14 concrations of thin flat crystals, frovi which were cut single crystal samples
;with di-ensions of 2 x 1.5 x 0A mm. By chemical transport reactions, there were 7
.!-Toduc, Uh n la 1: x 0
-id 'khin needles with a length up to 10 rmm, and t i p tt,,s (L.- x !.-$ .05
,Zae c-~Ystals of CdSiPZ are soluble in concentrated acids and havp t. rathar low thermal
!6tability (their dissociation in vacuum at a prezziare of! 5 x 10-' M. Hg 5tarts at a 7
icord I UDC: Y+6,461281181.

A--C- C---N--R--:-
AP6036797
i~emparaturo of 4500C). All of the samples were found to Iha-,/o a of the
~n-tl- In the samples grown from the solution molt, tho followinf: 7D,~-oparties wore
YPO k - e- - -
a J- - 10 ) -.ii
!d orminodi (aL room temp rature): conductivity (T,;~5 0~ lity of i
-sec-1 15
~tho olee'rons U = 150 cm -v-I ontration of curren' carrLers n 10
; conc cm
,ith an increase in temperature there is a sharp drop in the Hall c:onstant. With an
of the cur
mancreaso 4r~ tomporaturo, the conductivity Incroaso5, bu" ran'
carriors falls, starting at 4000K. The samples obtained 'th thii aid of c h em ic a 1
trans-n-ort reac'i=5 had a conductivity of the order of 10 1 f, k,
,dnvostigation of the spectral distribution of the 3,6 room teMperature I
'was nuado f or both types of samples. For crystals grown from a so IXtion molt, the
~~axlmwm of photoconductivity was observed at a photon en-)r,-7 ol' )-,r, -,:hilo for
qrys-15.11ri p-.-oducod by clicimical transport reactions, i~ was az. ila width of the!
~forbiddon zone for CdSiP2 was dotermi;nod, respectively, as 2.34 (rr for crysta'.Is grown
Ifron solution malts, and Z.Z5 for crystals produced with. thri la'd ;--,f c~'henical transport
C)ri,&?. art. hass I figure.
L
SUB COD?.; 'Zo 07/ SUBM DATEs i25Jan66/ ORM REFs 003/ 0-1-1. RZ.F. 002
1Card

-r6-670 0-2 / - -
A~C N& APM2396 SOURCE CODEs -UR10365 612721
N. A. ~ Grigorlyan, S. S. I Zlatkin, L. B.
AUTHORS _9sr a
ORGS Physicotechnical Institute in* A* F Ioffej AoademV of Sciencess SSSR (Fiziko-
tokhnicheakiy institut Akadadi,nauk SSSR;
TITLE$ Structure of the conduction band of ZnSiP2
SOURCEI AN SSSR. Izvestiya. Neorganicheskiye materialyg v. 2v no. 1?-t 1966, 2125-
2129
TOPIC TAGS: zinc compound, silicon compoundt phos.phide$ conduction band, absorption
edge, aisorption coefficient, Hall effect
ABSTRACT: In order to obtain data on the structure of the conduction band of the com-
ld ZnSiF2 (a diamondlike semiconductor of type AIIBIVC?v and electronic analog of
p
"20), the fundamental absorption edge of ZnSiP2 single .crystals was studied in the
1.5-2.7 eV range of photon energies at 300 and 770K. The Hal.1 effect and absorption
coefficient a were measured on n-type ZnSiP2 single crystals. The observed dependence
of cx~ on the energy of incident photonsp o..- (h-0-Eg)/L, shows that the forbidden gap
width of ZnSiP2 Is determined by direct allowed transitions at point K=O of the
Brinouin zone. The forbidden gap width E ovt = 2.OOtO.Oi 9V (T-30011K). The temper-
ature coefficient of the forbidden gap ;0h In the 77-3000K rango is equal to ,
4 x 10-4 eV/deg. On the basis of the concentration shift of the fundamental absorp-
Card 1/2 UDC& _r#46.47128i'181.i

ACC NRj
tion edgep the effective mass of a conduction electron of ZnSiP2 was found to be 0.08
(using the formula of T. S. Moss)# 0.0?4 (using the formula of E. Burstein)# and 0.13
(using the formula of W. Kaiser and H. Y. Fan) for n = I x 1019 cm-3. In conclusionp
authors mcpress their thanks to Corresponding Hember AN SSSR Ye. F., Gross for discus-
sing the results of the work, Orig. art. has$ 4 figures and 4 fonulas.
SUB COM 20/ SUIK DATRI Wan66/. ORM RIWI 0091 OTH MWI 007
Card 2/2

AOC NR-,---
AP7001892 SOURCE CODE: UR/0020/66/171/004/0830/0832
AUTHOR: Borshchevskiy,,A. S.;, Goryunova, N. A.; Sikharulidze, G. A.; Tuchkevich,
V. M.; Shmartsev, Yu. V.
ORG: Physicomathematical Institute.im. A. F. Ioffe)Akademii nauk SSSR (Fiziko-
matematicheakiy institut im. A. 17. loffe, Akademii nauk SSSR)
TITLE: Preparation and some properties of CdSnAs2 semiconductor compound
SOURCE: AN SSSR. Doklady, v. 171, no. 4, 1966, 830-832
TOPIC TAGS: cadmium tin arsenide, arsenide single crystal, single crystal growing,
single crystal property, zone refining
ABSTRACT: A method for growing crack-free CdSnAs2 single crystals is described.
The synthesis was carried out in a qu*artz ampoule and pure-argon atmos-
phere at a stoichiometric proportion of components and a temperature of
750C. The obtained compound was then zone refined. Crystals up to 7 cm'
long and about 1 cm in diameter were grown from the zone-refined ingot
'by zone melting at 585-589C with a molten zone speed of*0.8 cm/hr. The
respective-properties of the specimens cut from the-aiddle and end por-
tions of the single crystal v;ere; Hall constant 80 and 3.7 cm3/coulomb,.
YTnn. 4147 'All 1414

ACC NR: Ap7001892
'(1-4 16
resistivi .10 an .9-10 ohm-cm, electron concentration 7.9--l-JO.-
Oti - '16 09 'An -sec. Orig. art. has:
and_l..7-1 8/cm3g.and,mobilit d 7,650 cm2
/v
1 figure and I table.
SUB CODE; 20/ SUBM DATE: 20Dec65/ ORIG REF: 003/ OTH REV: 006/ ATD PRESS: 5111
Card -2/2

A.CC NR,- AP7013140
SOURCE CODES UR/o449,'157!001:'001/0141.'0143
AUTHOR: Goryun Tychina, 1. 1.; Xhansevarov, R. Yu.
ORG: Physico-technical Institute Im. A. F.-Ioffe, AN SSSR, Leningrad
(Fiziko-tekhnicheskly institut AN SSSR); Kiev State Pedagogical Institute 1M.
A. M. Gor1kiy (Kiyevskiy -osudarstvcnnyy podagogicheskly Institut)
0
TITLE: Somo photoelectric properties of monocrystals of n-CdGeP i;ub 2 and
p-ZnGeP sub 2
SOURCE: Fizika L tekhnika_poluprovodnikov, v. 1, no. 1, 1967, 141-143
TOPIC TAQI;,*. vapor presmwe,, photoelectric property, germanium single crystal,
single crystal growing,.IR photoconductor
SUB CODE: 20
ARSTPLACT: The vapor. pressures' of ili three components in the compounds tested
in this'atticle diffe25 sharply. This makes the technology of production of
idonocrystals extremely.complex, which exilains the complete absence of informa-
tion on the physical properties of these compounds in the literature. Using
dual temperature systh'psis, the authors developed a technique for syathesizing
these. compounds in con5~deratiou of the pressure kinetics of the vapors in
cardl/2
-- - - -----------------------------

.ACC NR, AP7013140
'an ampule. The CdGeP 2monocrystals were produced by directed crystallization
from a stoichiometric melt'at constant temperature gradient. This same method
was used to produce crystals alloyed with tin, germanium, gallium, arsenic,
bismuth and indium. The ZnGe? 2 monocrystals were produced by crystallization
from a malt-solution. The first measurments of photoconductivity of these
monocrystals showed that they have maximum photosensitivity in the visible and
near infrared areas, Vk#4_wA_k pqqqibly determine the area of their practical
Ori*&. art. has: I f Igure. 4CIPW
Card'...,.2/21
77
2
r
N

rA SOURCE CODE UR/0363/67/003/001/0180/0181
ACC NR.- AP7006211
AUTHOR: Goryunova, N. A.; Barshchovskiy, A. S.; Vonkrbots, Ya. Mm.; Korohak, N. M.
ORG: Physicotochnical Institute im. A. F. Ioffe, Academy of Sciences$ SSSR (Fiziko-
tokhnichoskiy institut, Akademii nauk SSSR); Department of Solid State Phy3icD,
Prague Polytechnic Institute (KrXedra fiziki tvordogo telaq Prazhski~, politekhni-
i cheskiy institut)
TITLE: Grouring of CdSnAB2 single crystals
SOURCE: AN SSSR. Izvestiya. Neorganicheskiyo materialy, v. 3, no. 1, 1967, 180-181
T0?1C TAGSt cadmium compoundj, tin compound# arsenide, single cr7stal gro-wring, zono
melting
ABSTRACTt A single-crystal ingot of the semiconducting compound CdSnAs2 was preparodl
by zone melting. The zone temperature was 600*C, and the gradient at the crystalli-
zation frontt 20 deg/am. After one pass of the zone at a rate o,-' 8 =,.,/hr, an ingot
was obtained whose first half was a single crystal, whose middle portion contained
twins, and whose end vas macrocrystalline and contained cracks. The mechanism of
formation of cracks is explained. The ingot had An n-typo conductivity. The oloc- i
trical, conductivity or , carrier concentration n = I/oR and H&U. nobility U = R(r , 1
'Whare R is the Hall coefficient# were measured at 100 and 300'K. It is phown that
the chief mechanism of electron scattering in n-CdSnAG2 with n >, 1 X 1016 ca-3 at
Card 1/2 UDC1 54,6-3-19-Q-811--19+548-55

XCC -Nk,'-- -Ap7oo6211
low temperatures is scattering on impurity ions. Daring zone recrystallization, the
impurities aro seDarated, as indicated by the measured mobilities of the charge
carriers. The zo~o melting method is thought to be affective, for growing pure CdSnks~
single c--7stalr, with high electron mobilities. By carrying out the zone melting
repeatedly and using a single crystal seed, the authors obtained VdSnAs2 ingots in
which individual single crystal grains were UP to 50 mm in s zo. The CdSnAS2 single
crystals obtained had an electron concentretion from 7 x 1019 to 5 x 1018 CM7*3 at
3001L. Orig. art.'hast I figure and I table.
SUB COM 2o/ SUBM DATE: 2ODec65/ ORIG REFt 004/ OTH W: Co5
2/2

BIM, G.S., starshiy nauchnyy sotrudnik. Prinimali uchastiye: LAK, G.T$,,
mledshiy nauchnyy sotrudniko T. S' ,
prof., doktor goologo-minors nauk, nouchnyy red*-, GENDEM,
D.Z., red.; SHEVCHMHKO, L.V., tekhn.red.
Equaternary sediments and the goomorphology of Zarelial
Chetvertichnye otlozheniia i geomorfologiia KaraIii. Petro-
zavodsk, Gos.izd-vo Karel'skoi ASSR, 1959. 307 P. (MIRA 12:12)
(Karelia--Geology)

BISKI, G.S.j--GORTUkOY#,...X,,N,; UKo G.TS.
Holocene in Karelia. Trudy Kar. fil. AN SSSR no.11:28-62 159.
(Karella--Goology, Strattgraphic) (MIRA 13:2)

- GORMOVA -, N. N.
--------------------------- --
I '- '.
A P of'peat bog sediments of Karelia. Trudy Kar fil. AN SM
-'f' - -162 161.
JI i, (Karelia~-Feat bogs) ?MLqk 3,417)

FRMTRA, N.S.; -GOR.YU.N.O,VA.,.N.11,j MUSTAFIN, I.S.
Spectrophotometric study of bis-(4-codlum-5-t-etrqzolylazo)-ethyI
acetate in aqueous solutions. Zhur. anal. khim. 21 no. 1:7-12
1,1% (MIIIA 1911)
1. Saratovskiy gosudarstvennyy universitet Imeni Chernyshevskogo.

ISMAILOV2 I.M., kand.tekhnnau ; MAKHMDOV, A.U.., inzh.; K~EPIKOV2 V.G., inzh.;
Prinimali uchastiye: G0.WXQVA.,-N.P.; VORONINA, L.D.; hAkOtH, F.K.;
SOLDATKIN,- P.S.; KORNEYCHUK, G.P.; KHAMIDOV, N.Kh.; SHULIZHENKO, I.P.
Hethod of grist conditioning accordir4e to moisture. MaBl.-ahir.prom.
28 no,11:37-39 N 162. (MIRA 15:12)
1. Sredneasiatskiy filial VSeS0YU2n0go nauchno-issledovatellskogo
%natituts, shirov (for Ismailov,, Goryunova, Voronina, Bartosh). 2.
Kattakurganakiy maBlozhirovoy kombinat (for Makhmu~;v, Soldatkin,
Korneychuk, Khamidov, Shullzhenko)~
(Oils and fate)

fakILIS, D.S.; SHENDEREY, L.I.; Prinimala uchastiye GQRYUINOVA N..P,
Solubility of oxygen-nitrogen mixtures in toluene. Khim.prom.
no.9:690-691 S 163. (MM 16:12)

TSIKLIS, D.S.j SHENDERSY, L.I. Prinimala uchantiye GORYUNOVA, N.P.
Phaae equilibria in the Pystem bar-ic acid - toluene --nitrogme
Dim. prom. 40 no.M841-W N 164 (MIRA 18t2)

A, I` e- L- (j-;Sf0q
AP5005364
A TTTI 9f F'.; Zakhvataye---, 0. r.; Kontsev-)Y, Yu. A.
T
I IT TAF: Effect of magnetic field on current -voltage charactevistics of p"-p-p'
structures
"M
Radiotekhnika i elektronika, v. 10, no, 2, 1965, 337-388
AB"_1 ~_ACT: A Ge plate with a resistivity of 10-30 oiim-crn -ind tw(, ohmic
s fqet- Enclosure 1) was tested in ;>ar&llel ane perpondiciAar magnetic
tk- -a-tir f1PI w
ne 11 he ri a it
_'._:N' ion e
5 , UT MI F T ED - 3 1 J an.64 ENCL: 0 1
N 0 R _P-T SO V: 00 1 OTHER: 003
V
Card
SUB CODE: EG

GQFMh'OVA, O.P.
D~~i-properties of small area ohmic contacts in semiconductors.
.Radiotekh. i elektrono 10 no,6tll23-1126 Je 165.
(MIRA IM)

L 236814.6 EWT (1) AT
AR6o05223 M. CE CODE: UR/0058/65/000/009/BD80/BDW
AUMOR: GoNa!aova& 0. X.
L ctor in
TITLE: Investigation of an instrument based on the breakdown of's. semicondu
a strong electric
field
SOURCE: Refe Zb. Fizika, Abs. 91 DO 77
REF SOURCE: Sb. Proboy dielektrikov i poluprovodnikov. M. -L.) Energiyaj, 1964),
325-327
TOPIC T.4ZS: dielectric breakdownj semiconductor crystal., volt ampere characteristic.,
ionization, electric resistance, germanium, junction diode
TRIASNSIA"27ION. An instrument is describedp having an S-shaped volt-ampere character-
istic With a negative-resistance section., arising as the result of cazcade ionization
during electric breakdown andlormation of electron-hole pairs, The time lag of the
instrument when operating in the negative-resistance section is -10-9 see, if the
region of the conductivity modulation under the point contact iv of the order of
100 g. Three methods are described for obtaining simil instrtments with n- and
p-Ge. The instrument can be used in circuits employing p-n-p-n junctions andcaseade
diodes. Bibliographyp 8 titles. Ma Averlyanova.
SUB CODE: 20
Card 1A

GORYUKOVA) R.11.
Early Kazan Finuiliportdae of thtj RUVAAn Platrorm. Paleont. zhur.
no.3:47-5i 164- (MIRk 18: 2)
1. Pale on tologi cheskiy institut AN SSSR.

- R93612
SOKHRANENIYE I POVYSHEtaYE PLODORODIYA POCHVY FRI OSVOYENII TSELINhTKH M4al
(NEW METHODS FOR CONSERVATION AND INCREASE]) FERTILITY OF VIRGIN Was, Lrf)
S. P. GORITJNOVA,, V. A. FRANTS.E.SON,, (1) N. P. ISAYENKO- MOSKVA, SMIK110WIZ., 1957.
180 P. ILLUS., TAMES.

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wRyunlIA, S. V.

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flown, 'Vsi"&l soperm"", SW
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of Owillabods. S. V. GoryultorA
Acad, SH. U.S.S.R.). 1wril. Ak,tJ.--Y`rmr.T~'.r.3-R-.
-%r. bid. 19W, 20-43.-Tbe nuip lmlk of the txkly of thr
Org2olons (7570) consists of polywchaddeve-ewntially
V the type, They arc roughly
."I. into: sol. In cfAd waw, %of. in hot Ilr(), and sol. In
UP only dtcr 5 Wt. heating with le'O II)SOO. The ftA-
t
ure d the satchwitles Ii not claritipl. G. M. K.

GORM10 VA S. V
111he Role of Algae in thn Enrichment of ReservolrB by Dissolved
Organic Substances." Sub 29 Doe 51. Inst of Mlcroblolt-~7!,, Acad 11cl
USSR,
Dissertations presented for science and engineering degrees In
Moccow during 1951,
SO; Sun. No, 480, 9 MaY 35

~r-'6Ry0'V0VA,,'3. V
Appl1catIon of fluorescent sicromeopy in determination of living and
dead calls In algae. TrAy Inst. mikrobiolo no.2:64--77 152. (KERA 5:12)
(ATA",
deters. of living & dead calls fluorescowt microscW)
(MICROSCOPY,
fluorescent, deters. of living & dead calls In algae)

GORYUNOU, S.V.
Characterization of dissolved organic substances in water of Glubokoye
Iake. Trudy Inst. Kikrobiol., Akad. Nauk S.S.S.R. No.2, 166-79 152.
.(CA 47 no.16:629) 15)) (KLRA 5:12),

GORYUNOVAI S. V.
"Substances Nvolved During Normal Vital Activity of the Diatomous Alga
Synedra spone
Tr. In-ta Mikrobiole AN WM No* 3, PP 194-200, 1954.
Study of the living cells of the diatomous alga Synedra showed that
this algagives off into the surrounding medium substances of it lipoid
type amounting to 10% of the dr7r w6ight, of the plant. The results of the
study are significafit for the explanation of certain questionable aspects
of the Upoid theory of the origin of petroleummd other minerals.
(RZhBiolp No 10j, 1955)
SO: Sm No 864, 9 Apr 1-956

- ~- -~ - - ...
--, 1. ~
~ 4-~i .1, ~' , -I-- - . I
. , I ;1~ ll~~, "
~7- ~, 1* 1

GORYUNOVA, S.V.
Predation in blue-green algae. Kikrobiologlia 24 no-3:271-274 W_
A '55. (IWA 8:7)
1. rnstitut m1krobiologil Akademil nauk SSSR, NoBkva.
(Alall

1
'
d 14
Mo
F
smas.
diftent
1. sko
.
f Ylu
f. ZGEE-

"ono'
' AGO&

- an spring 'btws6ming":
Stuld
i24.435AI9M)-
'
d phytoptwktua ig not a rtfiabk IndicAtion of activity; a
Variety of couditkms may taa* the visibk- e0ects. CelftLar,
may, trpt"soll-24--tysto
:
~~tl= of dWd ttAlg (Chk(IY Of Midfddj~;
M% In wranser. The
-14k Scim Ozem was cho" beamse Its relative richnm in,
ampo. supports abigh rate of adcrobiol. activity

afog*d and bytfrochm. PMV%--des axV excep-
while Its hydv
-
S
l
IM

--rab
e. E;-
P
,
,"Y fg

7~

GORYUN(NA, S. V.
Some Regularities in the Development and Disintegration Processes of Algal Plankton in
Far Eastern Seas.
The article reports on use of the luminescence analysis method in studying phytoplankton
and concludes that the method is satisfactory. It was found that the peculiar hydrological
conditiona of the northeeastern section of the Okhothk Sea induce a huge accumulation of
dead diatoms (Bacillariopbyta,N in ooze deposits.
Oceanogr )hie Research of the Northwestern Fart of the Pacific Ocean, Moscow, Izd.-vo
Its- Trudy, t.2.
P11 SSSR, 195
mL1d 4;
This collection of articles reports the results of observations e in he Pacific
by the Inatitute of Oceanology of the Academy of Sciencea, LJSSR. In 1949, the Institue
launched it systematic five-year program of scientific exploration of certain hydrographic
peculiarities of the Soviet Pacific Area. The operations were carried out as a "Complex
Oceanographic Expedition," using the Motorboat Vityaz' as its base. The LNTedition worked
in collaboration with the hydrographic Institute of the Soviet Navy (WIS), the Pacific
Institute of Piscatology and Oceanography, and some 40 other institAes of the Academy of
Sciences. Between 1949 and 1954, 18 trips vt!re made, covering about 130,000 miles. Among
the subjects of direct consern were: Meteorology, hydrology, oceanography, hydrochemistry,
sedimentation, geography of the littoral, geology and contours of the sea bottcm, fauna,
plankton, microbiology, and gravimetry. Twenty-eight authors contributed to the collection
Valch consists of 27 articles. There are: 6 gables, 23 diagrams, 3 illustrations (photo-
graphe of the littoral), 4 maps. There are no references.

GORYUNOVA, S.V., NASONOVA, M.V.
Effect of fluorescent lamps with various luminophores on the growth
and development of the green alga Scenedesmus quadriewift (with
summary in Inglishlo Mikroblologila 27 no-53581-587 S-%, 158
(KIM 11:12)
lo Institut mikrobiologii AN SSSR.
(ALGAII,
Scenedesums quadricauda, eff. of luminescent lamps
with various luminophores (Rue))
(LUMINESMN(M,
off of luminescent lamps with various luminaphores
on ;cenedosmas quadrieuda (Rue))

GORTUNOVA, S.V.
w , artatirregulirittee in the development and disintegration of
planktonic algae in the Yar Nest seas. Trudy Okean. kox. 3:84-95 -,
158. (M ITU 11: a)
(For last--Algae) I
I

GCRTUNOVA, S.Y., KABANOVA, Yu.G.
Characteristics of autol7tic decomposition of cello In some Peridinen
[with summary in ftliohj. lzr.AN SSSR.Ser.biol. no.4:431-418
JI-Ag 158 (MIRA 11;8)
1. Institut mikroblologii Akademii nauk SSSR.
(FLAGMJATA)
(A'UTOLYSIS)

OIORYUNOTA, S.T.
Characteristics of autolysts in diatoms. Trucly I-ast.mikrobiol.
no.51.199-205 158 WRA 11:6)
1. Institut mikrobiologit AN SSSR.
(AWn,
autolysts of diatomic algae (Rua))

,GC,RYUNOVA, S.V.; OSHITSKAYA9 L*R*
Biological Institute of the Hungarian AcadenV of S-.1ences0Izv. AN
SSSR* Serabida no 6s942-944 N-D '60o 13:11)
(HUMARY-31OLOGIGAL MLWMH)
IMP- 1~

GORYUNCIVAV S*V*;__OISNMKAYkp L*K*
S*^te of algology in the Hungarian People's Republic. Mikrobiologiia
29 no.6s938-939 N-D 160. (MIU 14: 1)
(HUNURY-AMAE-RMEARCH)

GORYLTNOITA., S. V. (USSR)
Role of Diatomic AlgaeAn Silicon Yderation in Nature.
report presented at the 5th Int'l.
Bioebemistry Congress, Moscow, 10-10' Au,,-. 1961

GORYUNOVA S.V.; OSNITSKAYA, L.Kj
Some inve'stigations in the fibld of microbiology carried out in
Himgary. Mikrobiologiia 30 fio.2t374-376 Mr-Ap 161. (NIP!,-I4t6)
(HUNGJLRY-KCROBIOLOGY)

GORYLUNOVAP S-.V,.$; OVSYANNIKOVA~ M.N.
Gultivation techniques for some marine diatom forms under laboratory
conditions. Mikrobiologiia, 30 no.6.995-997 N-D 161* (MIRA 14:12)
1. Institut mikrobiologii AN SSSR.
(AWAB-CULTURES AND CULTUAD MEDIA) (DIATO),IS)
v

ORNITSKAYA, L.K.; GORYUNOVA, S.V.
First All-Union Conference on the Cult'ivation of Unicellular Algae.
Mikrobiologiia 30 no.6:1135-1138 N-D 161. (MIRA 14;:LZ)
(AI"E-CULTURES AND CULTUa MEDIA)

S/220/62/031/003/003/003
1016/1216
Author: a n d 0 v s y a n n i k o v a, M. N,
Title: METHODS FOR THE ISOLATION OF ACTIVE CHLORELLA STRAINS FROM
NATURE
Periodical: Afikrobiologiya, v. 31, no. 3, 1961, 520-525
Text: A brief review of the Russian and foreign literature on methods of isolation of active Chlorella strains
is given. A procedure used by the authors in mass-sampling of water and soil for the isolation of Chlorella
is described.
Association: Institut mikrobiologii AN SSSR (Institute of Microbiology, AS USSR).
Submitted: May 30, 1961
Card 1/1