SCIENTIFIC ABSTRACT GLUKHOV, A.A. - GLUKHOV, I.I.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000515420004-0
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: September 24, 2001
• Sequence Number: 4
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

FrincipleE- of utomati,- qualitY for
nudio~r(;-,dcast ing a pparat u a. I zv . vys n Ile kh.
1. Re;~omandovan-i ~mfeJroy rudlovesinchaniya 1 aku:,ti,~4 Hoskovskoggo
elekt rot rhnicheskogo instituta .13VIlla-.i.
(Information theor-
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GLUKHOV, A.A.
Study of the effect of phase distortionc on tfie J-n9tantm,,eouc value
of the signal in the radio broadcast ng channel. rKlek~rojjviazl 15
no.1:33-39 Ja 161. (Information theory) 14:3)

GLUKIIOV, A. A.
Cand Tech- l')'ci - (diss) "Problua~s of -he auco::'nuic corl-.rol- of the
qualit,y of Performance of broadcasting, equip-ment." No,~-covj, 1961 .
14 pp; with -illustrations; (Mird~itry of Commuric,titiorl:z FOS-
cow Electrical Em-lineer-irig, Inst of Communic--itionizi; ll:C copies:
price not ~.ivun-, (KL, 6-61 sup,

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SOURCECODE: I 1R/0363/6(/MV/00~'/ "?,115/02118
AVI'HOR: Kharakhorin, F. F.; Glukhov, A. A.; Kuznetsova, Ye. S.i Potily-ov, V. 1. -
ORG: none
TITLE: Some properties of tellurium doped Indium and gallium arsenides
. ..... .....
SOURCE: AN SSSR. Izvestiya. Neorganicheskiye inaterialy,'v. 2, no. 2, 1966,
245-248
TOPIC TAGS, semiconducting material, gallium at-serilde, fildhio coml)ound, Indfum
arsenide, single crystal, electric property, acl.lvated crystal, tellurium activn:tor
ABSTRACT: Electron carrier concentration in relation to To dt~pant conitent in the
charge and Hall mobility of electrons 1.n reLation 1~o the, carrJer conCi!-ntr~,tion
have been studied in indium, arsenide and gallium arsenide tsinj:-,le cryslalsl .1 grown by
the Czochralski-Gremmelmayer technique and, in the case oF_0,ij7s_,by'Fi-Te`Et ed crystal-,!'
lization. This latter technique was used to exclude interference of Si acceptor
impurity (from the quartz container) with electrical characteristics of GaAs. In
the Czochralski process, 99,999% Te was introduced directly into the Melt. Hall
coefficient and resistivity were measured at 300K. In both indium and gallium
arsenides, earrier concentration increased wffb the increase in To content of the charge
up to a certain value (11saturation" point), then leveled off. However, the "satura-
tion" point was reached with ten times higher Te content in IWis than in GaAs.
'-ard llg UDC: 546-682'191+546. 6611191+5h6.24

ACC NR;
Consequently, the limit (maximum) carrier concentration was a",Jaut zai order of
magnitude higher in InAs than in GaAs (,-2 x 10 19 versus 3. 1 x 10 18 at/cc) .These
data were in satisfactory agreement with the literature. Presumably, the "satura-
tion" in carrier concentration was reached at a point when Te atoms form electrically
inactive Te-Te bonds. The Hall mobility in both arsenides atudied dif3pl4yed a
similar pattern of gradual decrease with increased concentration. A wide dispersion
of mobility data at a given carrier concentration for GaAs crystals, prepared by
Czochralski technique and by oriented crystallization was explained by the com-
pensating effect of the uncontrollable acceptor impurity. Orig. art. has: 5 flg~
ures. [JKJ 1
SUB CODE: 9-0 SUBM DATE- l2jul65/ ORIG REF: 002/ OTH REV: 007f ATD PRESS:
.Rire inetal 'f q,~

ACC imll,:`. A260 1 j ;1 0 Lf R -~f R I o I f 6
AUTHOR Kha ra khor J.n F F L IZ 11 i! 4. I~ V (I Y 1:, 0 v
Glukhov , A . A
ORG: 110 n 1~
T Url' 17 Re 1.3 Lion beLweell mob Ll [tv and concentra tit:-n of c.~. rr 'hers ill
Ladium arsenide
SOURCF AN CSSR. Izvestiva. iviterluly, v. 2, no. 3
1966 , 461-46~
TOPIC TAGS indium compound , ;irn F~nf.do, Indium ir-:;ontdv, vcmicon~!uctor
single cryot;iI, electron mob LIlry,