SCIENTIFIC ABSTRACT GELLER, I. - GELLER, L. I.

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000514620019-3
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: August 23, 2000
• Sequence Number: 19
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

GIUJM. I.; XMIN, S.
Conference on semiconductor rectifiers.
RMlo no.6:57 Js 156.
(KLIkA 9: 8)
(Blictric current rectifterel

MZSKINP SeS., inzhener; GILISH, I.M., inzhenor.
Conference on semiconductor rectifiers. Illaktrichestye ne.6:93-94
Ja 156. (KIRA 9: 9)
(Blectric current rectifiers)

677
edL. V
@AMP
rJob da aa6or
00iow (Ssmic(m, v su~bolth
i:i~~ , oiebos 1,
is teli- to jtjr~aos~
13Ar I ishcIO!, jr Vol Ga.
OvIr vw, IAW covies vr'At Of
rouix, st"011%
vo rovoco-0) 150000
-pow:?r 1 0 1 VOIAVTO-10~
ojobostvo jotitut ,
k3eriest 00 SSO* goal- ow
cbm G'jLoj WV"
osholdr.. x Is,
tatut off$ I * gi
P44 04's WocbAO % a,
tea ca
is, so" of
W* of Too voctor
D. 'p.; Id.
'K S. 0 O"tot Of
P;:4,ef).t %"IoGaL. t-P booto"~ On&
Tech* r). sool~i&w awl of Maio
Chia I t iA 80ow
(PAsistall I'sucesi 9-1 Doctov
*9+,,Iea 03ity .Cal SO& ica
6
001
IW�i or*
P't of
CoAdiote 5h.
C:9v
Ch L
Cb.
CRrd
Iftot1floatlon
444 00imlal J~.O;Ortlss
of

tL, ii
Irv
N T-,,
if 3,-,;~ A
-,-,ffz7

I
!gr

77, 17 7 Y7
~F L 'r. T". F57 T.-
W_"~ f F IU L rwIr 7
I LI FY I: TL
M
RI to be used ZI
I a IT T -Wr)7 I r. r) v
An A"NA"NIV of the senloon duc- or
blou of utIli2&tIOII Of
ro
p
Sao on the 6160trio
and mobility of curr
I
ico
i
o ent
nduatorM
S
m
s
n
Lrriors
oonductonde to
r
T#
010 the
61)
-
f
) -
(p.
On ~&Wloo u ator cow atanoo - (P.
u
radistio" L0

0 o
h f deformatidn s
crYitAlli" Adi
01
d hd
4s
ous an
7
P
iamorp
'1L1
of the n=*rical values of basio M
M
pS
11 PAM

IX
I
II

IV

ne
;7 1
_r_T -1 fm
I. T I d-Y.-I I TrT
F 7 TL 7
?ITT

W YC
W" O
,1w
t O
-that the vlo ,
comm-m -
azi
s
% leatric b0

-As the nduatlilty i

tomPerstuft
as
. th s tr"

rlW I
" Oldly then
In thin ,
9 ectr4c cm
Id Von W
Wds
1
pikus 0.
fe,

rT.

TT

,

w 7 oorAl 1.
t 90"

.41
ZZI, q i-r,% me-.= .9.1 .1 1
VIE
T_
"thod Of
Wo
and date
N�R
M WU

rei"90- -iiet- and 1--tr
as (2
ti -Me
-8 11bans "New" a---
muthor, discusses Plyano"Petic, phoihom*W~
to" of the first type -(I.# in SmOrul 1W
~'o nt
o Is corifted by'slootrons $;A not bylome
0aliffiltaneous Aation of the eleotrlo,wAd a's t 6-1
a the cis* of porpeb- a
kesAnto consideration 'a
t
lelds when plvomgnotio phenomena attain their
ascriptions.s" given of the Hall effect (p.~ 137) a
tio,' field (p. 142)1 of therwimagne'tio-po-
pa
F"thods used In measuring semiconductor cond 0
U--offect-'(p. 145). There or* 8 d IAgr& SO' and 3, Aft0wis
Ims-lat
at 6m im)
Tw

M-4,f Mllk L'I*jP~LAI*iMMIZMMIWZ-~,g~..,.WAr~IM--~7,IR~.XW.-;;.,~t,~IL,4;-r~,~.ti:~,~~~; " I
mw
I

OIL

r M 11.1 ......

-6 F I

FBI
l
n
.
This
thOOM
CA-
1 41 ).A
f or--ths- de sign and-
8
Wi moU ristics (P. 115
)
v8*14. Calculat ion and ~ VJ V.
ja Alc h tbo la tt#r my.be
ess
t&
d
but al so w ith x
u
In
O"r*tLO VA1 PrIA 01PISS In a nits

WjLth t"
Per
stw
0-
e oentrol ratw
.
lt ,
V
stabIlI zati on, and capao
y
I .
"d
dit
g65). I spu j N.A.-- IS a
y
.. T o
e
at
f rom ts o intr slized "Sew
f h "W
t ocatrol
sigg esto d A os
SISUIR O
t a S'
eolf Ic~ ~ ~Vavdn

at ar
ffs
i
isin
s a
P

r-I

dev
e1
opid a
bd =TA

77;-1 n -T- )4 Ar e
id
mml
b
d ysi s of. br e
e
ma
y
th
"t6re
a
.
.
. . . .
5 of
e rm

yts JL
u stry. Ty pes
sista no e therm "O term f
~- j
speo if
(t lootiora
ble )
Aw-' I I
5 a , P.
'
U I
ti
l
i
-11 typ
2 es
(cha
T
0 ra
P2 oter
/2 and o
the
-
of TP
11, .5j
/
types t :o m
. -I 4`Q ; f
wit h 1 ndIr*ot h Os o
" t h
lust ra tionso P "" P aL V

-7 ' --., . . , I ~ - .
. I- , .-- - 7r,-,.-7 - 7- -

S AWW
can
'

I k .
,
M

b a
ined arzir
b
1lization Of theIr

re'siven f the Cadmium
0
.a
, and I*f t
FS "-
jrA 2 types
.
T he Iol photore
lowing
se ,
lenium photoreffist
~ (
354)1
d
T. gu P-
e
If l
6u Ids (P . 361 1 soveril types
l
:rT.' a nd too data are Siv".'.
-
hnica
U
bAv or *4068.,~ (20 Sovietp 3..tranq
.-,-
-A

7A
7t
U54 i

*,T7 - r-

73 Tmv

~FV RMW

-J- I Rp
w F
I L..4 - -

"t',j F.,
I L

IL

lb o It. ,,
A l

t*d'.In'3 tabliaY.-I
'art ~ P"S"
0 -8 rec tlf lars' sssnb'l "f*
f tlenlm'
4"A' I rl"-~ . ..
W vo2togw,afll
U with &a opersti:
j7' 17- "7 t
a OUrsotifters ot,6 differelAt vil ASA
dions4as
it
OUM* rdatitiers so from
9*N*b r4atuyl
0 v
-siloj*rO14 vo2ta or 30 v Do =it I thore
t I
-reqtirlers of A difforent unit nsloJ6 ~~"dl'
~~200-**.roctifler olio. V. Basic i-PAVOW
ttWes of 200+.5F Cv 7-types grd'pre-
t phs and diagrams:and grerer4uies'-
aw
ited'

I ---- - - , - - - , - '.., "" ~ '. z, ~ -h ~~ . . . . . ..1 ~`,, -1.1 ~- ;
-, d 1; , ~ I 'l- ,
1.1-.. - i ~, - 7 1 mm;lllw~- ;~~i I ~~
I N ~~
. t.`%,'.~W;-VU ra
Imm.,

2.~4.7 700 66270
_"t6t_ SOV/181-1-11-5/27
AUT11OHSt Abdullayevp 0. B-o Aliyevj M. G., Geller, I. Kh.
TITLE: The Influence of Impurities on the Strong Field Effect in
Selenium Rectifiers
PBRIODICALi Fizika tyerdogo telat 1959# Vol 10 Nr 11, pp 1670 - 1675 (USSR)
ABSTRACTs A 50,W thick selenium layer was deposited by vacuum evapora-
tion on bismuth-coated aluminum base. The first selenium crys-
tallization occurred at 1100C in the course of 2 hours. Sub-
sequently the samples were kept at 2170C for 15 minutes. The
selenium layer was coated with a thin, chemically pure sulfur
layer. The working surface of all samples was 12 ~1 CM2. Various
series of samples were prepared, first of 99.996 pure seleft-
ium. Next 0.016, 0.032, 0.065 and 0.13 percent by weight of
bromine were added to these selenium samples. The statistical
voltage versus current characteristic was measured in the con-
ventional measuring arrangement. Figures 1, 2 and 3 graphi-
cally present the results in the temperature range -1830 to
+400C for the relations lqRtfU' and lgR:U2. The results show
that the bromine contentb considerably influence the field 2
Card 112 strength where lgR begins to be linearly dependent on and U

Bew
12/0 11 3/015
91 *3 B019/3056
AUTHORS: llekrashevich, 1. G., Geller, 1. Kh., Tkachev, V. D.
TITLE: Galvanic Effects in selenium Rectifier Elements
PLRIODICAL: Inzhonerno-fizicheskiy zhurnal, 1960, Vol- 3, No. 12,
PP- 1414-116
TEXT: The authors investigated the effect produced by moisture upon
selenium rectifiers. In several experimental series, the behavior of the
elements in moist and dry air was investigated. The results indicate
that by the air moisture in the elements a galvanic ENF Is formed, which
is produced by the forming of galvanic couples between the lower and the
upper electrode and between selenium and the upper electrode. These two
couples act within a closed circle of a rectifier element in an opposite
direction. These galvanic effects and their changes with a change of the
moisture penetrating into the element from outside are considered to be
causes of the fluctuations of the return current and of the destruction
of selenium rectifier elements. There are 3 figures and 2 tables.
Card 1/2

88M6
Galvanic Effects in Selenium
Rectifier Elements
5/170/60/003/012/013/015
B010056
ASSOCIATION: Belorusskiy gosudarstvennyy universitet im. V. 'A. Lenina,
g. Minsk (Belorussian State University imeni V. I. Lenin,
Minsk)
SUBMITTED: January 22, 1960
x
Card 2/2

-1-1 -1."- ; A-MULUMVI A
'GqU-,H, G.B.) KOCIIIN, hLIEV,
Scloni-xia ~re,;tiflpr:j involving a bigher cuxTent density,
I:.,v, All Azorb.SSR.,S,3rJi4, mat, i tekY. nauk ro,4:51 63
161. (11,111W, 14:12)
(E-jeQtTJ:' currunt roctifters)
(.31clenitm)

)(A
0 0
AUTHORS;
TITLE.
PERIODICAL:
82536
S/181 60/002/007/011/042
B006/BO70
Geller, 1. Yh., Sharavskiy. P. V.
Electric Parameters of Some Types of Selenium Rectifiers
Fizika tverdogo tela, 1960, Vol. 2, No. 7, pp. 1441-1449
TEXT: Selenium rectifiers derive their rectifying properties from the
formation of a p-n-junction. Cadmiuu sulfide or selonide serve as an
n..type semiconductor. The purpose of the present work was to Investigate
how the properties of rectifiers are affected when the technological
Process of their manufacture is altered. For this purpose, the following
rectifiers were investigated: 1) The ordinary maes-produced rectifiers
of the type ABC (SrA) (AVS (VSA)) whose manufacture is described in
Refs. 3-5. They have cadmium selenide as n-type semiconductor, which ic
formed as a result of the interaction of the cadmium of the upper
electrode with the sulfur sputtered on selenium. The permissible back
voltage for a rectifier plate of this type is '8 - 26 v. 2) The so-called
"cadmiumizei" rectifier whose selenium film is coverel with a cadmium
Card 1/4

82536
Electric Parameters of Some Types of S/161/60/002/007/011/042
Selenium Rectifiers Boo6/BO70
film. The permissible back voltage is :~!26 v. 3) Tballium-sulfur
rectifiers whose upper electrode contains 0.015 - 0.02% of thallium.
These rectifiers, besides having a high permissible back voltage (Z't 26 v),
poasess also a lower resistance in forward direction. thus making it
possible to Increase the permissible current by 100% per plate. 4)
Selenium rectif tern of the type TBC, (TVS) with a reversed order of their
layers. These rectifiers have the p-n junction not under the upper
eleatrode, but on the base layer. They have cadmium selenide as n-type 41
semiconductor, which is formed by the Interaction with sulfur of the
cadmium film applied to a thin aluminum backing. This type is
digting-jished by a specially high back voltage (some of them work with a
back voltage cf 50-60 Y). The working area of all type3 was 1CM2, except
TVS for which it was 2.36 cm2. The data of measuremen''all refer to an
area rf lcm?. At first, the measurements of the curr-ent-cltage
characteri3tics are described. Table I gives the measured values of
resistance of four types of rectifiers for 0.3 and 30 v, as well as the
mqx1mum values. Table 2 ghows the fall of potential in forward direction.
Fig. i shows the volt-ohm characteristics of the rectifiers. All types
Card 2/4

82536
Electric Parameters of Some Types of S/181/60/002/007/011/042
Selenium Rectifiers B006/BO70
9how an exponential fall of resistance with increasing potential; only
the TVS type shows a weak maximum for small potentials and then a linear
fall. In the following four diagrams, In R - f(U) is shown for the four
types investigated and for three different functions of U (three different
abscissae). These diagrams are discussed in detail. AVS and thallium
rectifiers show direct proportionality between In R and U, the cadmium
rectifiers between In R and Mul and the TVS rectifiers between in R and
U2_ Later, the results of capacity measurements are discussed. The mean
effective thicknesses of the p-n junctions for different shift voltages
U are given in Table 3. The "cadmiumized" rectifiers show the thinnest
junction (3.68*1o-5cm). Fig. 6 shows 1/C2 . f(U) (C-capacity); Fig. 7
shows the distribution of impurity centers of the thickness of the p-n
junction, and Fig. 8 Phows the temperature dependence of the latter.
Finally, some additional investigations on the characteristics of semi-
conductors are mentioned, and their results are collected in Tables 4-6.
Frenkell Is mentioned. There are 8 figures, 6 tables, and 9 references:
4 Soviet and 5 German.
Card 314

82536
Electric Parametern of Some Types of S/181/60/002/007/011/042
Selenium Rectifiers B006/BO70
ASSOCIATION: Leningradakiy inzhenerno-stroitellnyy institut
(Leningrad Construction Engineering Institate)
SUBMITTED: January 15, 1960
Card 4/4

AMULLATITO G.B., BAKUMV, X.Ta.9 GILMR, I.D., NASIROT, Ta.l.
Zffect of bromine on the characteristics of selenium photocells.
Dokl,AN Asorb.SSI 16 no*4:323-326 160. (NIMA 13:7)
1. Inetitu fInIkI AN Averboydshan*oy SSR*
(Bromine) (Photoelectric cello)

3/032/60/026/04/13/046
B010 Boo6
AUTHORSs Mamedov, K. Po, Geller, I. Kh., Mokhtiyev,__K. U.
TITLEi X-Ray Diffractometric DeterminatiorAf the Thickness of Thin Coats~
on metals
PERIODICLLs Zavodakaya laborstoriya, 1960, Vol. 26, No. 4, pp. 445 - 446
TF.XTs The method suggested by V. S. Kogan and B. Ya. Pines (Ref. 1) is in-
adequate for measuring the thickness of coats applied to solid metallic
foundations. In such cases, the method devoloped by L. S. Palatnik (Ref. 2) can
be used. It is based on a comparison of the intensity of two Debye lines re-
flected from the foundation and the coat. The coat, however, must be crystalline.
The authors developed a method applicable for both crystalline and amorphous ,
coats on metals. The intensity of a particular interference from the surface of
the foundation itself and the part of the foundation covered with the coat is
determined. In this case, the change In intensity is solely caused by the
weakening of the X-ray in the coat. The method described was used to determine
tho thickneas of thin cadmium- and bismuth coats on aluminum disks of selenium
rectifiern. A URS-50I diffractometer was used, but any other apparatus allowing
Card 1/2

X-Ray Diffractometrio Determination of the Thickness S/032/60/026/04/13/046
of Thin Coate on Metals B010/n06
for the measurement of reflected X-ray intensities may be applied. Measuring
results obtained are given (Table). There are 1 figure, 1 table, and 2 Soviet
references.
ASSOCIATIONt Institut fiziki Akademii nauk Azerb~ SSR (Institute of Physics of
the Academy of Sciences of the Azarbaydzhanskaya SSRT-
Card 2/2

S/194/62/000/003/040/066
D201/D301
AUTHORS: Sharavskiy, P. V. and Geller, L Kh.
TITLE: The influence of thallium on the electrical properties
of selenium rectifiers
?"B'RIODIOAL: Referativnyy zhurnal, Avtomatika i radioelektronika,
no. 3, 1962, abutract 3-4-24d (V Ob. 'Fizika I kbimiyal
L., 1961, 9-13)
T An inveatigation into the effect of Tl on electric conducti-
Ir ty of Se and on the properties of selenium rectifiers. It is
shovin that the increase in' tho resistivity of Se, containing halide
impurities, becomes less by 2 ordera of magnitude as compared with
'1.*','.a*s,- of pure Se, when Tl is introduced. Selenium rectifiers were V/
prepared into which Tl was introduced, either Into the upper elec-
6rode consisting of a Sn f Cd alloy or under the upper electrode in
a quantity of up to 0.1% into a Se layer -10-3 cm, thick. As compared
with industrially manufactured rec'tifiers, the above rectifiers ex-
Card -hi,bit a smaller resistance in the forward direction, which permits
Card 1/2

GEUER, I.Kh.; ABDULLAYEV, G.B.; KOCHIN, G.I.; ALIM, Y.G.
Rectifying selenium elements suited to currents of higher density.
Izv. AN Azerb. SSR. Ser.fiz.-mat. i tekh.nauk no-5:65-73 161.
(MIRA 15:2)
(Electric current rectifiers) (Selenium)

BAKAYEV, A.V.j G&LIER JLAHOV, M.P.; NASLEDOV, D.N.j
DORINp V.A.; ZAY
SOIDVIYEVR R.A.
Method for investigating potential distribution in selenium
rectifying cells. Zav.lab. 27 no.10:1240-1242 161. (MIRA 14::L0)
1. Leningradskiy po3.itekhnicbeskiy institut im. M. I. Winina.
(Selenium-Electric properties)

L 1290h-bl, EWP(q)/W-.(M)/BDS__.... AFn.GIASD..,. RW/JD-, .
ACCESSION M AT3002989 0/292*7/62/000/000/0i05/0M5'?
AUTHOR: Geller, 1. Xh.; Zaugollnikov-as Yea 0 1 Karageorgiy-AlkalWLy. P. M.;
Karimove., 1. Z.; Murywap, V. 1.1 Rechaye t fe-..
.TITLE: Analyzing certain characteristics of oplenium rectifiers Elurport of taue
All-Unl n ~onferencc on Semiconductor Dcvices'Se~ Tashkent from 2 to 7
October 196IJ
SOURCE: F.1ektronnody*=chzW*ye perekhodyo V poluprovodnikakhe Tathkent.. Iz&vo
AN uzssR. 1962., 1 m-j 11
TOPIC TAGS: AVS selenium rectifier,, TV8 selenium rectifier, selenium rectifier.
current-voltage, selenium rectifier capacitance, selenium rectifier
Experimental data on AVS wA TV8 selenium rectifiers is coqpared vith
theoretical considerations. Current-voltage and capacitance characteristics of
thcsc types vere determined vithin -120 +160C range. It ime fowA that the
diffusion potential decreases linearly aa the temperature increases-which agrees
well vilti sorne published theoretical data, Reverse current-voltage
characteristics determined experimentally, vith various temperatures as
pvxrumetcrs, showed that they represent different exponential functions; the
Card 1/2
L

L 129OL-63
ACCESSION NR: AT3002989
latter depend on the temperature, not on the type of rectifier slons as was
supposed in earlier published works. Differential resistance and capacitance of
the above rectifiers were measured within a broad range of Forward
a:A reverse cumnt-yolta~p characteristics, a diffusion-potential-temp.%rature
curve., and capacitence-voltage relations are given in the article., as well as
~Interpretatlonz of the physical phenomena involved, Orig., art., havi 7 figUrest
1 formula, and 2 tables.
ASSOCIATION: Akademiya nauk SSSR (Acadeqr of Sciences SSSR); Akademiya nauk
Uzbekskoy SSR (Acaderiq of Sciences UzSSR) Tashkentskiy gosudarstvenny*y
universItet (Tashkent State University)
SMMMM: 00 DATE ACQ: 1SAY63 ENCL 1 00
SUB CODE: 00 110 M SOV: 009 OIM: 001
Card

S/233/62/000/003/005/010
f f 2 tl
A !P1 11 Olt 5: Aliynrova, Z.A., Alakperova, Sh.14., Goller, I*Kh,
T ITTZ; Investigation of the terperAture dependence or the
Inverzie resistnneo in selenium rectifiers
PERIODICAL: Akadoini7ti naulc Azerbaydzhanskoy SSR. Izve3tiya. Serlya-
fi,-,"A,Ico-nater,r,.t4~che'skikh I tekhnicheskikh nauk, no.3, J,
19612, 01-e7
TEXT: The temperature dopendence of the volt-ampere characteristics
of selenium rectifiers thnt; pass a trebled current density in the
forward direction has not boon inventigatod yet. The inverse cur-
rent in these elements incranses with a temperature increnae up to
SOOC and then decreases, At low tempeivatures the inverse current
Increases with a deorease-in-tOMPOr4ture more rapidly than In oom-
T,-,On tip Cyr finedt-a--bbow -- that-Ahe -vompersture ch-grixoter-istics - '7
I te: depend on the aviount

S/23.3/62/000/003/005/010
Invostivation ol' tho tomporaturne.
tration in the n-n transition region in selenium rectifiers brings
a better tomperqbire dependence of che inverse current. (2) A
minimum is foinid in the hij-h temperature region of the inverse cur-
ront temporat,urtj dapendonce curve of selonium rectifiers with gal-
lium impurities ind artificial. lwyors of CdSo and CdS. This tmini-
mum in aisplacod Lowfirds higher temperatures with a voltage Incraq.-
se. (3) Tho offoct of a 3trong field is manifest at low temperatur-
es in selenium roctiflors %-.,Ith gallium impurities mlir-h earlier than
in common rectifiers with no gallium. Tho woek of G.B.
,'ibdullayov 13 mant-ioned, There are 5 figures. The moat important
7nglish-longuF;ge reference roads as follows: Sall G.T., Noyce R.N.,
~hockloy Iffe, Proce I.R.E., v.45, 9. 1228, 1957o
Card 4/4

,kUTHOR:
~.TFLB:
Pil#RIODICAL:
3/275/63/000/001/020/035
D413/D308
Gelle
EJL_~ and Sharavokiy, P. V. I
On the effect of thallium doping on the forward branch,
of the voltage-current characteristic of selenium
rectifiers
Referativnyy zhurnall Blektronika i yeye primeneniyeq I
no. 11 1963v 19, abstract 1B 128 (In collectiont Pi-
zika, L.p 19629 42-45)
U"M The authors have investigated the forward branches of the I
voltage-current characteriatice of selenium rectifiers prepared
with the upper electrode doped with thallium. The reduction in for-,
ward reuietance'of this rectifier as compared with the normal sele-;~
nium rectifier is explained by the injection of nonfundamental. car-:
fiera through the eleqtron-hole tranuition. 2 references. Z-Ab-
stracter's. note: Complete translation.
-7
Card i/1

-1 11150-63 Ms
ACCESSION NRt AT3002984
S/29Z7/62,/000/000/0083/0086
AUTHOR: Asessorovq Yu. P.; Bakradzep 0. G.; Geller I Kh ; Grinbarg,, I. s.; 45
Mury*gin, V. I.; Nechayevas R. To.j Smirnov#
TITLE% Effect of reverse current on forward resistance in solenius rectifiers
(Report at too All-Union Conference on Semiconductor Devices, Tashkent# 2-7 October#
1961]
SOURCE: Els1ftronno-dy*rochny*yo parekbody* v poluprovodnikakh. Tashkent# Izd-vo
AN UzSSR, 19621. 83-86
TOPIC TAGS: selenium rectifier creep, TVS selenium rectifier
ABMACT: Experimental studios of the "forward current-voltage characteristic
creep" are described. A considerable increase in the forward voltage drop upon the
passage of a reverse current is referred to as a "creep". It Is vw7 pronounced in
TVS-type selenium rectifiers., The creep was measured at various temperatures withir.
-70+1380, on a--a and pulsating current, at various reverse voltages. Forvard
current-voltago, forward voltago-toVerature, forward voltage-time, forward voltage-
reverse voltage, and forward voltage-frequancy curves are presented. This explana-
tion in offered for the creep: the diffusion potential,, i. e. the contact potential
Card 1/2

L 11150-63
ACCESSION NRt B3002984
0
difference betvaen So and CdSel my vary as a result of charge variation in the deep.
impurity centers due to impact ionisation. Orig. art. has. 8 figures.
ASSOCIATION: Akad. nauk SSSR(Acadmq of Sciences SSSR),- Akad. nauk UzSSR(Academy
of Sciences UzSSR); Tashkentakiy gosuniversitet im. V. I. Lenina. (Tashkent State
University)
SUMMED: 00
SUB COZE: 00
DATE AGQs l5May63
NOW SOV: 001
ENCLt 00
CTM: 000'
cflzll~
Cord 2/2
-------------- --------------- ............ ------ - ----- ------

AUT1101IS: Hakayev, A.V. , Gel.-I or, IKh.
Ma s I o dov, D N . -ev, R.,%
TITLE, Distribution of potential in
elements between electrodos
s/i3g/63/000/001/012/027
1: 2 0 2/r, 4210
. Dorin, V.A. , Zakharov,P.m.,
.
selenium rectifying
PFRIODICAL: Izvestiya. vyi;shikh uchobnykh zavedeniy. Fizika,
no.1, L963, 78-84
TGXT: Results of measuring potentiai distribution in selenium
rectil'ying clentents in the conducting direction are described.
To explain in detail the mechanism of potential distribution between
the electrodes, measurements were carried out at points separated
by a distance of 51L. Since the thickness of selenium layer varies
from 50 to 1001' it was necessary to i;ieasure the potential at 10 to
20 points. In order to carry out the measurements the layer of
selenium and the p-n junction region were stripped and a transverse
section prepared. Both types of rectifiers, i.e. those with p-n
junction between the upper electrode and the layer of selenium,
and these in which the p-n junction lies between the layer of
selenium and the base, were investigated. The method was based on
Card l/ 3

S/139/63/000/001/012/027
Distribution of potential ... E202/E420
measuring the difference of potential between one of the electrodes
and a probe, the latter being placed at various points on the
Rurftco of the transverse section of the element. A special
instrument-incorporating a microhardness gauge of the diamond
pyramid typo in which the latter was replaced by a steel wedge-
shaped probe was used. Durint measurements the probe was pressed
into the selenium in order to obtain reliable results. The width
of the indentation made by the probe was 1.5 to 21t,hence the
potential could be measured at points separated by a distance of 511-
Sincc the probe contact with selenium has a considerable resistance
of the order of 108 to 109 ohiitfi, a high resistance voltmeter was
used in the measurements. This comprised a potentiometer with a
center zero electrometer sensitive to a current of 10-11 A. The
measurements had an absolute error of 0.001 V. Considerable care
was t ken in the p
reparation of the transverse sections. The
results have shown that the main fraction of tile potential applied
to tile element in the conducting direction falls over the p-n
junction region, on the other hand the layer of selenium accounts
-for not more than 25% of the above fall. In addition to plotting
: Card 2/3

Distribution of potential ...
s/139/63/000/COI/()12/027
C202/E420
the potential against the distance over the CdS-(orCdSe)-Se-fl12Se 3-
Al portions of the randwich, preliminary volt-anspere character-
istics of both types of rectifier were measured on polished and
unpolished samples. There ar-e 6 figures.
ASSOCIATION: Loningradskiy politeklinichaskiy institut, imeni
M.I.Kalinina (Leningrad Polytechnic Institute
imcni M.I.Kalinin)
SUBMITTM August 22, 1961

GELLER, laaak Khaimovich; KUZIMINOV, A.I., red.; BULIDYAYEV, N.A.,
Bekhn. red.
[Selenivid'rei4tifibrs] Selenovye vypriamiteli, Moskva; Izd-
vo *Opergiia, 4,1964. 23 p. (Massovaia radlobiblioteka,
no .4V) (MIRA 17:4)

I.M.,kandidat meditainskikh nauk.,; CUM, A.V..kandidat
iesinskikh nauk..
A portable device for studying Inman sleep by means of actography.
Gig. i san. 21 no.2:60-61 7 '56. (KLAA 9:6)
1. 1z Hauchno-tooledoratellskogo Institute, Grazhdanskogo
vosdushnogo flota.
(SIMP, physiol.
portable device for studying human sleep by means of
actography)
(MOVIKENT
In sleep. registration)

GELJZR, I.M.
114 -------------
Development of refrigeration in the U.S.3,R. during the period
from 1959 to 1961. Khol.tekh. 39 no#6;14 N-P 162. (MIRA 15:12)
1. Vsesoyuznyy nauchno-isoledovatellskiy institut
kholodillnoy promyshlennosti.
(Refrigeration and refrigerating machinery)
0 -

clel-v I cing zcn -,~hclcs a 3r~,- I d rtr;r-vjgr.,- wir f. khc 1. te kh.
42 nc.~ 150-54 V.-r-At, 165. (ml%l
3. Vser-ruviyy lmst.it,ut kbn]c