SCIENTIFIC ABSTRACT GARYAINOV, S.A. - GARZO, CABRIELLA (MRS)

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000514330010-4
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: July 19, 2001
• Sequence Number: 10
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

SeM.Aconducto-@ Two-Terminal Device
With ',,.IeEa-,,I;;e Resistance SOV/I &@I, -5--2-11 6/23
diode viith a negative resistance on the forward branch
of the volt-ampere characteristic. They used a silver
wire with a small donor admixture. The nec-ative
resistance appeared after an electric forming with strong
Currents. The authors reproduced a similar device
and discovered a negative resistance on both the
forward and return branch of the volt-ampere chavactepisti.,-,.
T
the more stable poutIon being on the retUrn branch L
is probable that an n-p-n structure developed under, the
contact. Flat- and as-mmetrical two-electrode systems
of n-p-n and p-n-p types were Divest,'"gated by U.S,
selentists S. L. MIllev and J . Ebers (see U.S. refs).
There were, however, no comprehensive analyses made
of' phenomena leadtnr, to the development of negative
L5
resistance. The authors experimented with Iwo-electrode
device's of the p-n-p type C0118tt-LICted by meltIng Indimm
Into electronic germanium. The results of' those experl-
ment-s are given in this paper. The possible mechanics
of achieving negative resistance al'O dISOLISsed
approxLmated anlalytloal cxprcs*ton3 of the voll' - ampe re
Card '2,/16 characterlstLe are developed, and some data on the

Semiconductot, T-eio-'rect-rLinal Device m j
With Negative HLeoLstance tj
pct,Vovmanco of these (,Ievl(!c3 it) I'U(.IjOteC11111CLII CIP(!Uit3
are U'lVen. (1) Poo3lble physical proceooc:-i leadlnC, to
of a negative resIstance In t-wo-clectrode
SerTILCOnCIUCtOV dcvIcoo. The mathematical expression for
nq,,aUve reoLstance In two-elecl@t,o(ie sorileomlvwtor
d e - -
vice., 1;@: -XI All

Talieve the minus sign before I-NU IndIcateo an Increase
of conductivity of ttie device tv,*Lth Inci,ease of the cur-
rent, and a considerabLe Inct,ease, oIL' the niimbei, of cm-
1'ent In the [)-n JLIIICLLOtIS dU(-' to [Mt"@Ct
ionization is Possible only if combined -a regenera-
tive PPOCeSS stimulated by a positive feedbacIr in the
device . Thus, two conductivity vals InG -,ow ces are
reqUII-Od, woNicing together In Such a 11-hat the increase
of conductivity by one camses a coi ... copondinC, increase
by tile othe-. As the second cource, Cie Usei:
Card thet,rrial generation oC chlat@ge ct@rt,Lcro :i:-, '')

Device
Wit-11 Nej.-at,lve ReoLsftLtnce
DG'P:3e4 to DGTsel2 point COnfLICt
ki'-'vlce's hav'@! a stxon@r Ltwvt1!t1 nonllnezirtty, in,i
pavarnuter-:3 stronc,ly dependent Oil t'emper"Itu""c", thu@7
-endevin-, them useless In tile
(2) Ll Second p-11 Junctlon, with @-tn 111.1ec-I.-Lon 01, cul""Ont
wUh the (!kwtrent 1twvc;-u@e, tht!
e e 'fet
JevLcc tu;Lm, the effect of LILlit, '. the SLen i,
the shM curvent of tile extevrial
of the p-n junction at which tile veverse voltace Is
applied. These conditions can be e3tablished in the
sem1C0ndUCt0P stvuctuve as shown on Fl@r, 1. Tile initial
cur-ent Inevease in SUch a system Is achle,..-ed by the
USe Of MUltiplication at; the poLarlty shown in Fig. 1,
the Junction (ftll-tirlCr' called et-.11ttev) 13 shLfted
for,.-ia-d.. while tile JLlnCtLon (further called col-
lectov) 10 ShMed in the reve-'e (11."ectLon. At
voltaC,e looier than the crit-Icai U at impact
cili
lonLzation beCjns, a curpenlu of tile orie- of tl,,,-? rol-
VI'- I.,
C@,Wd () ICCt-:W "MtUl'atiOrl '10',';S thl"OLIffil tile P-111-t, '-'t,'PUCture.

Semiconductor Two-Terminal Device
With Negative Resistnce
77783
SOV/109-5-2-16/26
"
r
-U
p p -0
Ing
U(:
Fig. 1. p-n-p Type structure.
Electrons entering from the collector charge the base
negatively, lowering -Its potential, thus Increasing
the hole current throuch the emitter. The ratio of
the increase of the full current to the increase of
the elect-,)n ciir--ent at the collector Junction equal3:
Card 5/16

Semiconductor Two-Terminal Device 7778
With Negative Resistance SOVY109-5-2-16/26
where a ok is trans-
y b Ipe
mission coefficient of holes from the emitter to the
I
collector; P + is emitter effectivene.,3!@:
pe ne
131 is coefficient of electron transmission from
collector to emitter (here, a < 1 and 13, < 1
0
and, therefore, CL e > 1); Ipe , Ine' I Pk-' Ink
are hole and electron components of emitter and
collector currents. The avalanchelike increase of
current may. lead to a flooding of the collector
junction,.Which causes there a lowering of potentiaT,
and subsequent appearance of a negative resistance
section of the volt-ampere characteristic. (2)
Development of an expression for the volt-ampere
characteristic of the p-n-p structure in a two-tei-,@i-
inal device. Ignoring the part of the electron current
Card 6 /16 reaching the collector junction, in comparison wi',--h

Semiconductor Two-'revin1nal Device
1-11th Negative Resistance
.30V/ 1 U) --2, - 16/2 6
othev cu-i-ents tile CoLlowLn;@ tWO t2QU3t1O1l.'; 11-0 I'll'IttOn:
+
wheve M is electron multiplicatlon coelff'Llclent-,; M
hole multiplication coefficient. Coeff Icient 131
is detevmLned from tile equallt,' r of the recombination
CLU,vont.i of holes and electi-ono Ln tile base:
0 - P-_-) 1111= 01-
Considering that I = Ie I1C from (4) an(I (5) follovis:
awllj) + awlf,O - P.-) lpe
(6)
I -aO
The currents In Eq. (6) may be found by solvLnE; the
equations of continuity and diffusions, and after, sub-
stitutIng these values ) can be transformed Into
(7), where tile Currents are expressed with reference to
Card (/10 @1 unity area of tile Junction:

IdLth Ne,,;,atL'.rc Resi-st-ance S0V/1Gj-5-c--i6,/2rj
I -- aall (U) k
(7)
where J os, i ns are hole and elect,ronic componen,s of
the satiwatIon curvent.
.11"clj
q ; k=
JUS +ir's aolf)
Sh
is base width; L P, , diffusion lengtl@ of holes. it
is assumed that U = Uc + UIC, M = M p = M11. This
equation Is valid only for the beginning of the sectIon
of negative resistance, but it permits evaluation of
LIV-2 fill'thOl' b0haVLO111' OIL' U10 11-11-1) 3t.Vt1CtUVc. E' (I I I a t 10 n
(Y) 011OWS LhUt LIAO :311Z.1t)C OC U10 V01t-LW1f)CL-C C'11,1PACtcI-
ist1c 13 ba3lcally determIned Jpr the term i/i - a M.
PLgLl,,e 2 shows an Idealized volt-ampere charactevil;t1l..
Card 8 /16
-04

Semiconductor Two-Ter--ninal Device
With Negative Resistance
Pig. 2. Idealized
volt-ampere charac-
teristic of a p-n-p
type structure.
77783
qovll /26
Uj 11, U,U
For U